Display device

Abstract

An exemplary embodiment of the present invention provides a display device, which includes: a thin film transistor panel, including a display area and a peripheral area; and a color conversion panel, which is overlapped with the thin film transistor panel, wherein the color conversion panel includes: a substrate; a color conversion layer; a first organic layer, which is arranged between the color conversion layer and the thin film transistor panel; a second organic layer, which is arranged between the first organic layer and the thin film transistor panel; and a polarization layer, which is arranged between the second organic layer and the thin film transistor panel, wherein the first organic layer overlaps with the display area and the peripheral area, and the second organic layer overlaps with the display area.

Description

[0001] This application claims priority to and the benefit of Korean Patent Application No. 10-2018-0065630 filed on June 7, 2018, in the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0002] The present disclosure relates to a display device and a method for manufacturing the same. Background Art

[0003] The liquid crystal display may include two field generating electrodes, a liquid crystal layer, a color filter, and a polarizing layer. Since the light generated from the light source passes through the liquid crystal layer, the color filter, and the polarizing layer to reach the user, light loss may be generated in the polarizing layer and the color filter, etc. Light loss may also be generated in display devices other than liquid crystal displays, such as organic light emitting diode displays, etc.

[0004] In order to realize a display device having high color reproducibility while reducing light loss, a display device including a color conversion display panel using semiconductor nanocrystals has been proposed.

[0005] The above information disclosed in this Background section is only for enhancement of understanding of the background of the inventive concept and therefore the above information may contain information that does not constitute the prior art that is already known in this country to a person of ordinary skill in the art. Summary of the invention

[0006] Exemplary embodiments have been made in an effort to provide a display device capable of suppressing a peeling phenomenon of an organic layer or an inorganic layer in a peripheral region and improving reliability of the display device.Exemplary embodiments have been made in an effort to provide a display device capable of improving color reproducibility of the display device.

[0007] An exemplary embodiment of the inventive concept provides a display device, the display device comprising: a thin film transistor panel configured to have a display area and a peripheral area; and a color conversion panel configured to overlap with the thin film transistor panel, wherein the color conversion panel comprises: a substrate; a color conversion layer disposed between the substrate and the thin film transistor panel and comprising semiconductor nanocrystals; a first organic layer disposed between the color conversion layer and the thin film transistor panel; a second organic layer disposed between the first organic layer and the thin film transistor panel; and a polarizing layer disposed between the second organic layer and the thin film transistor panel, wherein the first organic layer overlaps with the display area and the peripheral area, and the second organic layer overlaps with the display area. An edge of the second organic layer may be disposed between the display area and an edge of the thin film transistor panel, the edge of the thin film transistor panel being adjacent to an edge of the second organic layer. The second organic layer does not overlap with the peripheral area in a plan view.

[0008] The display device may further include: a first inorganic layer disposed between the first organic layer and the second organic layer; and a second inorganic layer disposed between the second organic layer and the polarizing layer.

[0009] The first inorganic layer may overlap the display area and the peripheral area, and the second inorganic layer may overlap the display area. An edge of the second inorganic layer may be disposed between the display area and an edge of the thin film transistor panel, the edge of the thin film transistor panel being adjacent to the edge of the second inorganic layer.

[0010] The second inorganic layer may not overlap the peripheral region in a plan view.

[0011] The second organic layer may partially overlap the peripheral region in a plan view.

[0012] The second inorganic layer may overlap the peripheral region.

[0013] The display device may further include: a dummy color filter layer configured to overlap the peripheral area.

[0014] The dummy color filter layer may overlap the first organic layer and the first inorganic layer.

[0015] The dummy color filter layer may not overlap the second organic layer and the second inorganic layer in a plan view.

[0016] An edge of the polarizing layer and an edge of the second organic layer may coincide with each other.

[0017] An edge of the second organic layer and an edge of the second inorganic layer may coincide with each other.

[0018] An exemplary embodiment of the present invention provides a method for manufacturing a display device, the method comprising: preparing a substrate having a display area and a peripheral area; forming a color conversion layer including semiconductor nanocrystals on the substrate; forming a first organic layer on the color conversion layer; forming a second organic material layer and a metal-forming layer on the first organic layer; and sequentially removing the metal-forming layer and the second organic material layer in the peripheral area to form a metal layer and a second organic layer.

[0019] The manufacturing method may further include: forming a first inorganic layer between the first organic layer and the second organic material layer; and forming a second inorganic material layer between the second organic material layer and the metal-forming layer.

[0020] The manufacturing method may further include forming a second inorganic layer by removing the second inorganic material layer in the peripheral region.

[0021] An edge of the metal layer and an edge of the second organic layer may substantially coincide with each other.

[0022] The metal-forming layer may be removed by using the first photosensitive resin pattern as a mask.

[0023] The second inorganic material layer and the second organic material layer may be removed by using the first photosensitive resin pattern as a mask.

[0024] The first photosensitive resin pattern may be removed, and the second inorganic material layer and the second organic material layer may be removed by using the metal layer as a mask.

[0025] The manufacturing method may further include: removing the first photosensitive resin pattern and forming a second photosensitive resin pattern covering the metal layer, the second photosensitive resin pattern partially overlapping the peripheral area; and etching the second inorganic material layer and the second organic material layer by using the second photosensitive resin pattern as a mask.

[0026] According to exemplary embodiments, a display device having improved reliability may be provided by suppressing a warping phenomenon of an organic layer or an inorganic layer in a peripheral region. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 is a schematic top plan view illustrating a display device according to an exemplary embodiment.

[0028] Figure 2 is a schematic cross-sectional view illustrating a display device according to an exemplary embodiment.

[0029] Figure 3 is along Figure 1 A cross-sectional view taken along line III-III'.

[0030] Figure 4 is along Figure 1 A cross-sectional view taken along line IV-IV'.

[0031] Figure 5 is along Figure 1 A cross-sectional view taken along line IV-IV'.

[0032] Figure 6 , Figure 7 , Figure 8 and Fig. 9 is a cross-sectional view illustrating a method of manufacturing a display device according to an exemplary embodiment.

[0033] Fig.10 and Fig.11 is a cross-sectional view illustrating a method of manufacturing a display device according to an exemplary embodiment.

[0034] Fig.12 and Fig.13 is a cross-sectional view illustrating a method of manufacturing a display device according to an exemplary embodiment.

[0035] Fig.14 , Fig.15and Fig.16 An image of a peripheral area of ​​a display device according to a comparative example is shown.

[0036] Fig.17 Images of peripheral areas of display devices according to examples and comparative examples are shown. DETAILED DESCRIPTION

[0037] The inventive concept will be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the inventive concept are shown. As will be appreciated by those skilled in the art, the described embodiments may be modified in various different ways without departing from the spirit or scope of the inventive concept.

[0038] In order to clearly describe the inventive concept, parts (portions) irrelevant to the description are omitted, and the same reference numerals denote the same or similar constituent elements throughout the specification.

[0039] In addition, since the sizes and thicknesses of the constituent members shown in the drawings are arbitrarily given for better understanding and ease of description, the inventive concept is not limited to the sizes and thicknesses shown. For clarity, the thicknesses of layers, films, panels, regions, etc. are exaggerated in the drawings. For better understanding and ease of description, the thicknesses of some layers and regions are exaggerated in the drawings.

[0040] It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, the element may be directly on the other element, or there may be intervening elements. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements. In addition, the terms "on..." or "on..." mean being positioned on or below a target portion, and do not necessarily mean being positioned on the upper side of the target portion based on the direction of gravity.

[0041] In addition, unless explicitly described to the contrary, the word “comprise” and variations such as “comprises” and “comprises” will be understood to imply the inclusion of stated elements but not the exclusion of any other elements.

[0042] Furthermore, in the specification, the phrase "in a plan view" means when a target portion is viewed from above, and the phrase "in a cross-sectional view" means when a cross section taken by vertically cutting the target portion is viewed from the side.

[0043] In the following, reference will be made to Figures 1 to 4 A display device according to an exemplary embodiment will be described. Figure 1 is a schematic top plan view showing a display device according to an exemplary embodiment, Figure 2 is a schematic cross-sectional view showing a display device according to an exemplary embodiment, Figure 3 is along Figure 1A cross-sectional view taken along line III-III', and Figure 4 is along Figure 1 A cross-sectional view taken along line IV-IV'.

[0044] The display device according to the present exemplary embodiment may include a display area DA for displaying an image and a peripheral area PA disposed at an edge of the display area DA.

[0045] A plurality of pixels PX may be disposed along the first direction D1 and the second direction D2 in the display area DA.

[0046] Each pixel PX may include a thin film transistor and a pixel electrode connected to the thin film transistor.

[0047] The dummy pattern DP may be disposed in the peripheral area PA. Although the present specification shows a form in which the dummy pattern DP extends along the first direction D1, it is not limited thereto. Figure 4 The dummy pattern DP will be described in detail.

[0048] The display device according to an exemplary embodiment may include a thin film transistor panel 100 and a color conversion panel 30 overlapped with the thin film transistor panel 100 .

[0049] The thin film transistor panel 100 may have any form including a thin film transistor and an electrode connected to the thin film transistor. In addition, the thin film transistor panel 100 may include a thin film transistor, a pixel electrode and a liquid crystal layer, or may include a thin film transistor, a pixel electrode and an emission layer. The thin film transistor panel 100 is not limited to such exemplary embodiments.

[0050] In the following, reference will be made to Figure 3 To describe the color conversion panel 30 superimposed with the display area DA, reference will be made to Figure 4 The color conversion panel 30 overlapping the peripheral area PA will be described.

[0051] Reference Figure 3 , the color conversion panel 30 includes a substrate 310 overlapped with the thin film transistor panel 100 .

[0052] The light blocking layer 320 is disposed between the substrate 310 and the thin film transistor panel 100. The light blocking layer 320 may be disposed between the red conversion layer 330R and the green conversion layer 330G, between the green conversion layer 330G and the transmission layer 330B, and between the transmission layer 330B and the red conversion layer 330R along the first direction D1. In addition, the light blocking layer 320 may be disposed between the red conversion layer 330R and the red conversion layer 330R adjacent to each other, between the green conversion layer 330G and the green conversion layer 330G adjacent to each other, and between the transmission layer 330B and the transmission layer 330B adjacent to each other. The light blocking layer 320 may have a dot matrix shape or a line shape in a plan view.

[0053] The light blocking layer 320 can prevent mixing of different lights emitted from adjacent pixels and can separate regions where the red conversion layer 330R, the green conversion layer 330G, and the transmission layer 330B are respectively disposed. The light blocking layer 320 can be made of any material capable of blocking (reflecting or absorbing) light.

[0054] The blue light cut filter 325 may be disposed on the substrate 310 between adjacent light blocking layers 320 and between the substrate 310 and the thin film transistor panel 100. The blue light cut filter 325 may be disposed between the red conversion layer 330R and the substrate 310 and between the green conversion layer 330G and the substrate 310. The blue light cut filter 325 may overlap with the region emitting red light and green light, and may not overlap with the region emitting blue light.

[0055] The blue light cut filter 325 includes a first region overlapped with the red conversion layer 330R and a second region overlapped with the green conversion layer 330G. The first region and the second region may be separated from each other. However, the inventive concept is not limited thereto, and the first region and the second region may be connected to each other in a plan view. When the first region and the second region are separated from each other, the separated blue light cut filter 325 may include the same material or different materials.

[0056] The blue light cut filter 325 can block blue light from passing through the red conversion layer 330R and the green conversion layer 330G. The blue light introduced into the red conversion layer 330R and the green conversion layer 330G is converted into red light or green light by the semiconductor nanocrystals 331R or 331G. In this case, some blue light can be output without any conversion. The blue light emitted without conversion is mixed with the red light or the green light, and the color reproducibility may be degraded. However, the blue light cut filter 325 can block (absorb or reflect) the blue light supplied from the light source from being emitted through the substrate 310 without being absorbed in the red conversion layer 330R and the green conversion layer 330G.

[0057] The blue light cut filter 325 may include any material capable of obtaining the above-mentioned effects, and as one example, may include a yellow color filter. The blue light cut filter 325 may have a single-layer or multi-layer stacked structure.

[0058] In the present specification, it is illustrated that the blue light cut filter 325 is in contact with the substrate 310 , but the present inventive concept is not limited thereto, and a separate buffer layer may be disposed between the substrate 310 and the blue light cut filter 325 .

[0059] A plurality of color conversion layers 330R and 330G and a transmission layer 330B may be disposed between the substrate 310 and the thin film transistor panel 100. The color conversion layers 330R and 330G and the transmission layer 330B may be arranged along a first direction.

[0060] The color conversion layers 330R and 330G may convert incident light into light having a wavelength different from that of the incident light and emit the converted light. The color conversion layers 330R and 330G may include a red conversion layer 330R and a green conversion layer 330G.

[0061] The incident light is not converted in the transmission layer 330B, and the incident light may be emitted as it is. As an example, blue light may be incident on the transmission layer 330B, and may be emitted as it is.

[0062] The red conversion layer 330R may include first semiconductor nanocrystals 331R that convert incident blue light into red light. The first semiconductor nanocrystals 331R may include at least one of a phosphor and a quantum dot.

[0063] The green conversion layer 330G may include second semiconductor nanocrystals 331G that convert incident blue light into green light. The second semiconductor nanocrystals 331G may include at least one of a phosphor and a quantum dot.

[0064] The quantum dots included in the first semiconductor nanocrystal 331R and the second semiconductor nanocrystal 331G may be independently selected from Group II-VI compounds, Group III-V compounds, Group IV-VI compounds, Group IV elements, Group IV compounds, and combinations thereof.

[0065] For Group II-VI compounds, the following can be used: binary compounds selected from CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof; binary compounds selected from CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, Cd A ternary compound of HgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and a mixture thereof; or a quaternary compound selected from HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and a mixture thereof. For Group III-V compounds, the following can be used: binary compounds selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof; ternary compounds selected from GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb and mixtures thereof; or quaternary compounds selected from GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, GaAlNP, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and mixtures thereof. For Group IV-VI compounds, binary compounds selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof; ternary compounds selected from SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof; or quaternary compounds selected from SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof may be used. For Group IV elements, Si, Ge or mixtures thereof may be selected. For Group IV compounds, binary compounds selected from SiC, SiGe and mixtures thereof may be used.

[0066] In this case, the binary compound, ternary compound or quaternary compound may be present in the particle at a uniform concentration or at partially different concentrations. The quantum dot may include a plurality of quantum dots, and the quantum dot may have a core / shell structure in which one quantum dot surrounds another quantum dot. The interface between the core and the shell may have a concentration gradient such that the concentration of the element in the shell decreases toward the center of the shell.

[0067] The quantum dot may have a full width at half maximum (FWHM) of a light emission wavelength spectrum equal to or less than about 45 nm, preferably equal to or less than about 40 nm, more preferably equal to or less than about 30 nm, and within this range, color purity or color reproducibility may be improved. In addition, the light emitted by the quantum dot may be emitted in all directions to have a Lambertian emission pattern, thereby improving the viewing angle of the light.

[0068] When the first semiconductor nanocrystal 331R includes a red phosphor, the red phosphor may include a phosphor selected from the group consisting of (Ca, Sr, Ba)S, (Ca, Sr, Ba) 2 Si 5 N 8 、CaAlSiN 3 、CaMoO 4 and Eu 2 Si 5 N 8 At least one of the group, but the present disclosure is not limited thereto.

[0069] When the second semiconductor nanocrystal 331G includes a green phosphor, the green phosphor may include a material selected from the group consisting of yttrium aluminum garnet (YAG), (Ca, Sr, Ba) 2 SiO 4 , SrGa 2 S 4 , BAM, α-SiAlON, β-SiAlON, Ca 3 Sc 2 Si 3 O 12 , Tb 3 Al 5 O 12 、BaSiO 4 , CaAlSiON and (Sr 1-x Ba x )Si 2 O 2 N 2 At least one of the group, but the present disclosure is not limited thereto. x can be any number between 0 and 1.

[0070] The transmission layer 330B may pass the incident light as it is. The transmission layer 330B may include a resin that passes the blue light. The transmission layer 330B disposed at the region emitting the blue light does not include semiconductor nanocrystals, and passes the incident blue light as it is.

[0071] Although not shown, the transmission layer 330B may further include at least one of a dye and a pigment. The transmission layer 330B including the dye or the pigment may reduce external light reflection and may provide blue light with improved color purity.

[0072] At least one of the red conversion layer 330R, the green conversion layer 330G, and the transmission layer 330B may further include a scatterer 335. Contents of the respective scatterers 335 included in the red conversion layer 330R, the green conversion layer 330G, and the transmission layer 330B may be different or the same.

[0073] The diffuser 335 may increase the amount of light converted in the color conversion layers 330R and 330G or transmitted through the transmission layer 330B and then emitted, and may uniformly provide front brightness and lateral brightness.

[0074] The scatterer 335 may include any material capable of uniformly scattering incident light. As an example, the scatterer 335 may include TiO 2 、ZrO 2 、Al 2 O 3 、In 2 O 3 、ZnO、SnO 2 , Sb 2 O 3 and at least one of ITO.

[0075] As an example, the red conversion layer 330R, the green conversion layer 330G, and the transmission layer 330B may include a photosensitive resin and may be manufactured by a photolithography process. Alternatively, the red conversion layer 330R, the green conversion layer 330G, and the transmission layer 330B may be manufactured by a printing process or an inkjet process, and when manufactured by a printing process or an inkjet process, the red conversion layer 330R, the green conversion layer 330G, and the transmission layer 330B may include a material other than the photosensitive resin. In this specification, it is shown that the color conversion layer and the transmission layer are formed by a photolithography process or a printing process, but the present disclosure is not limited thereto.

[0076] The filter layer 340 is disposed between the color conversion layers 330R and 330G and the first organic layer 351 and between the transmission layer 330B and the first organic layer 351 .

[0077] The filter layer 340 can be used as a filter that reflects or absorbs light other than the light having the specific wavelength while transmitting the light having the specific wavelength. The filter layer 340 can have a structure in which layers with a high refractive index and layers with a low refractive index are alternately stacked, and can transmit and / or reflect the light having the above-mentioned predetermined wavelength by utilizing constructive interference and / or destructive interference between these layers.

[0078] The filter layer 340 may include TiO 2 、SiN x 、SiO y 、TiN、AlN、Al 2 O 3 SnO 2 , WO 3 and ZrO 2 At least one of, and as an example, the filter layer 340 may have SiN x and SiO y The structure of alternately stacked layers can be adjusted according to the process conditions used to form the layers as used to determine the SiN x and SiO y The factors x and y in the chemical composition ratio.

[0079] In another exemplary embodiment, the filter layer 340 may be omitted and may be replaced with a low-refractive layer or the like.

[0080] The first organic layer 351 is disposed between the filter layer 340 and the thin film transistor panel 100. The first organic layer 351 may overlap the front surface of the substrate 310, and the first organic layer 351 may overlap the display area DA and the peripheral area PA.

[0081] The first organic layer 351 may planarize one surface of the red conversion layer 330R, the green conversion layer 330G, and the transmission layer 330B. The first organic layer 351 may include an organic material, but is not limited thereto, and may include any material capable of a planarization function.

[0082] The first inorganic layer 353 may be disposed between the first organic layer 351 and the thin film transistor panel 100. The first inorganic layer 353 may include any inorganic material, for example, silicon oxide or silicon nitride.

[0083] The first inorganic layer 353 may protect the first organic layer 351 , or may help stack the first organic layer 351 and the second organic layer 361 .

[0084] The second organic layer 361 may be disposed between the first inorganic layer 353 and the thin film transistor panel 100. The second organic layer 361 may include a material that is the same as or similar to that of the first organic layer 351.

[0085] One of the surfaces of the color conversion layers 330R and 330G and the transmission layer 330B may be planarized by the first organic layer 351. However, when the step between the color conversion layers 330R and 330G and the transmission layer 330B is large, it may be difficult to planarize one of the surfaces of the color conversion layers 330R and 330G and the transmission layer 330B only by using the first organic layer 351. According to the present exemplary embodiment, the color conversion panel 30 may planarize one of the surfaces of the color conversion layers 330R and 330G and the transmission layer 330B more finely by the second organic layer 361.

[0086] The second inorganic layer 363 may be disposed between the second organic layer 361 and the thin film transistor panel 100. The second inorganic layer 363 may include a material that is the same as or similar to that of the first inorganic layer 353.

[0087] The second inorganic layer 363 may help stack the polarization layer 22. A stable stack structure may be provided by forming the polarization layer 22 on the second inorganic layer 363.

[0088] The polarizing layer 22 may be disposed between the second inorganic layer 363 and the thin film transistor panel 100 .

[0089] At least one of an applied polarization layer, a coated polarization layer, and a wire grid polarizer may be used as the polarization layer 22. For example, the polarization layer 22 may be a wire grid polarizer including a metal pattern. When the polarization layer 22 is a wire grid polarizer, the polarization layer 22 may include a plurality of strips having a width of several nanometers. The polarization layer 22 may be formed by using various methods such as a coating method, an attachment method, and a printing method.

[0090] An insulating layer 365 and a common electrode 370 may be disposed between the polarizing layer 22 and the thin film transistor panel 100 .

[0091] The insulating layer 365 is used to insulate the common electrode 370 and the polarizing layer 22 made of metal from each other. When the polarizing layer 22 is not made of metal, the insulating layer may be omitted. The common electrode 370 applying a common voltage may generate an electric field together with the pixel electrode included in the thin film transistor panel 100.

[0092] In the following, reference will be made to Figure 4 The color conversion panel 30 provided in the peripheral area PA will be described. Descriptions of components similar to those described above will be omitted.

[0093] The dummy pattern DP (specifically, the dummy color filter layer DP) may be disposed between the substrate 310 and the thin film transistor panel 100. The dummy color filter layer DP may have a Figure 1 The shape of the dummy pattern DP shown in FIG.

[0094] The dummy color filter layer DP can be connected with the reference Figure 3 The red conversion layer 330R, the green conversion layer 330G, and the transmission layer 330B described are arranged on the same layer. In addition, the dummy color filter layer DP may include the same material as the material of at least one of the red conversion layer 330R, the green conversion layer 330G, or the transmission layer 330B. For example, the dummy color filter layer DP may include the same material as the material of the transmission layer 330B. The dummy color filter layer DP may be manufactured together in the process of manufacturing the red conversion layer 330R, the green conversion layer 330G, or the transmission layer 330B.

[0095] Due to the function of the dummy color filter layer DP, a step between the stack structure disposed in the display area DA and the stack structure disposed in the peripheral area PA may not be large.

[0096] The filter layer 340 , the first organic layer 351 , and the first inorganic layer 353 may be sequentially disposed between the thin film transistor panel 100 and the dummy color filter layer DP disposed in the peripheral area PA, and the filter layer 340 , the first organic layer 351 , and the first inorganic layer 353 are simultaneously disposed in the display area DA.

[0097] The filter layer 340, the first organic layer 351, and the first inorganic layer 353 are the same as described above. The first organic layer 351 and the first inorganic layer 353 may completely overlap the display area DA and the peripheral area PA.

[0098] According to the present exemplary embodiment, the second organic layer 361 and the second inorganic layer 363 may overlap the display area DA and may not overlap the peripheral area PA. The second organic layer 361 and the second inorganic layer 363 may have a shape in which the second organic layer 361 and the second inorganic layer 363 are removed from the peripheral area PA in a plan view.

[0099] The polarizing layer 22 may also be disposed only in the display area DA. The polarizing layer 22 may overlap the color conversion layers 330R and 330G and the transmission layer 330B, and may not overlap the dummy color filter layer DP.

[0100] At least two edges of the polarizing layer 22, the second inorganic layer 363, and the second organic layer 361 disposed in the display area DA may overlap each other. The edges of the polarizing layer 22 and the second organic layer 361 may coincide with each other, and the edges of the second organic layer 361 and the second inorganic layer 363 may coincide with each other. The edges of the polarizing layer 22, the second inorganic layer 363, and the second organic layer 361 may coincide with each other.

[0101] The insulating layer 365 and the common electrode 370 are disposed between the polarizing layer 22 and the thin film transistor panel 100. The insulating layer 365 and the common electrode 370 may overlap the display area DA and the peripheral area PA. The insulating layer 365 may contact the first inorganic layer 353 in the peripheral area PA.

[0102] The first organic layer 351 and the first inorganic layer 353 disposed in the peripheral area PA may overlap with the dummy color filter layer DP. The insulating layer 365 and the common electrode 370 disposed in the peripheral area PA may overlap with the dummy color filter layer DP. The second organic layer 361 and the second inorganic layer 363 may be removed from the peripheral area PA. The second organic layer 361 and the second inorganic layer 363 may have a shape in a plan view in which they do not overlap with the dummy color filter layer DP.

[0103] According to an exemplary embodiment, by removing the second organic layer 361 and the second inorganic layer 363 disposed in the peripheral area PA, a lifting phenomenon occurring in the peripheral area PA may be reduced.

[0104] When the second organic layer 361 and the second inorganic layer 363 are also disposed in the peripheral area PA, a peeling phenomenon may occur between the second organic layer 361 and the second inorganic layer 363 disposed in the peripheral area PA. A portion of the second organic layer 361 may not be cured, and the peeling phenomenon may occur due to outgassing generated in the uncured second organic layer 361.

[0105] However, the display device according to the present exemplary embodiment may have a shape in which the second organic layer 361 and the second inorganic layer 363 disposed in the peripheral area PA are removed. The peeling phenomenon caused by the uncured second organic layer 361 may be reduced, thereby improving the reliability of the display device.

[0106] In the following, reference will be made to Figure 5 A display device according to a modified embodiment will be described. Figure 5 is along Figure 1 Description of components similar to those described above will be omitted.

[0107] According to the present exemplary embodiment, the light blocking layer 320 may be disposed between the substrate 310 and the dummy color filter layer DP. Figure 4 As shown in FIG. 4 , the light blocking layer 320 disposed in the peripheral area PA may be omitted.

[0108] According to the present exemplary embodiment, the first organic layer 351 and the first inorganic layer 353 may overlap the display area DA and the peripheral area PA. The first organic layer 351 and the first inorganic layer 353 may overlap the front surface of the substrate 110.

[0109] The second organic layer 361' and the second inorganic layer 363' may completely overlap the display area DA and may partially overlap the peripheral area PA. The second organic layer 361' and the second inorganic layer 363' partially overlapping the peripheral area PA may also partially overlap the dummy color filter layer DP.

[0110] According to the present exemplary embodiment, the edges of the second organic layer 361 ′ and the second inorganic layer 363 ′ may coincide with each other in a plan view. In this case, the overlapped edges may be disposed in the peripheral area PA.

[0111] The insulating layer 365 may overlap the second inorganic layer 363' and the second organic layer 361' in the peripheral area PA. The insulating layer 365 may contact the top surface and the side surface of the second inorganic layer 363' and the side surface of the second organic layer 361' in the peripheral area PA. The common electrode 370 may also overlap the second inorganic layer 363' and the second organic layer 361' in the peripheral area PA.

[0112] In the following, reference will be made to Figures 6 to 9 A method of manufacturing a display device according to an exemplary embodiment will be described. Figure 6 , Figure 7 , Figure 8 and Fig. 9 2 is a cross-sectional view illustrating a method of manufacturing a display device according to an exemplary embodiment. Descriptions of components similar to those described above will be omitted.

[0113] Reference Figure 6 A light blocking layer 320, a plurality of color conversion layers, a transmission layer 330B, and a dummy color filter layer DP are formed on the substrate 310. Next, a filter layer 340, a first organic layer 351, a first inorganic layer 353, a second organic material layer 360a, a second inorganic material layer 360b, and a metal forming layer 22a are formed to overlap with the front surface of the substrate 310.

[0114] Then, if Figure 7 As shown in FIG. 1 , a first photosensitive resin pattern PR overlapping the display area DA is formed on the metal forming layer 22 a.

[0115] Then, if Figure 8 As shown in FIG, the second organic layer 361, the second inorganic layer 363 and the metal layer 22b are formed by etching using the first photosensitive resin pattern PR as a mask. The edges of the metal layer 22b, the second inorganic layer 363 and the second organic layer 361 etched using the same mask may be aligned with each other and overlap each other.

[0116] The etched metal layer 22 b may be formed through a wet etching process, and the second inorganic layer 363 and the second organic layer 361 may be formed through a dry etching process and an ashing process.

[0117] Next, when the first photosensitive resin pattern PR is removed, the following may be provided: Fig. 9 The metal layer 22b, the second inorganic layer 363 and the second organic layer 361 are shown with their edges aligned.

[0118] Then, an embossing process or the like may be performed on the metal layer 22b to form the polarizing layer 22. Thereafter, an insulating layer 365 and a common electrode 370 are sequentially stacked on the polarizing layer 22 to provide a structure as shown in FIG. Figure 4 The color conversion panel 30 shown in FIG.

[0119] In the following, reference will be made to Fig.10 and Fig.11 A method of manufacturing a display device according to another exemplary embodiment will be described. Fig.10 and Fig.11 2 is a cross-sectional view illustrating a method of manufacturing a display device according to an exemplary embodiment. Descriptions of components similar to those described above will be omitted.

[0120] Reference Fig.10 , similar to reference Figure 7 The manufacturing method described above forms the metal layer 22 b etched by using the first photosensitive resin pattern PR as a mask in a stacked state.

[0121] Then, if Fig.11 As shown in , the first photosensitive resin pattern PR is removed. Thereafter, the second inorganic material layer 360b and the second organic material layer 360a may be sequentially etched by using the etched metal layer 22b as a mask. The second inorganic material layer 360b and the second organic material layer 360a may be etched by a dry etching process and an ashing process.

[0122] In this way, it is possible to form Fig. 9 The metal layer 22b, the second inorganic layer 363, and the second organic layer 361 are shown in FIG. The edges of the etched metal layer 22b, the second inorganic layer 363, and the second organic layer 361 may overlap each other.

[0123] Next, an imprint process is performed on the etched metal layer 22b to form the polarization layer 22, and an insulating layer 365 and a common electrode 370 are sequentially stacked, thereby providing a Figure 4 The color conversion panel 30 shown in FIG.

[0124] In the following, reference will be made to Fig.12 and Fig.13 A method of manufacturing a display device according to another exemplary embodiment will be described. Fig.12 and Fig.13 2 is a cross-sectional view illustrating a method of manufacturing a display device according to an exemplary embodiment. Descriptions of components similar to those described above will be omitted.

[0125] Similar to Fig.10 , a metal layer 22 b is formed by etching using the first photosensitive resin pattern PR, and then the first photosensitive resin pattern PR is removed.

[0126] Then, if Fig.12 As shown in FIG. 1 , a second photosensitive resin pattern PR′ is formed on the second inorganic material layer 360b and the etched metal layer 22b. The second photosensitive resin pattern PR′ may overlap the display area DA and may partially overlap the peripheral area PA.

[0127] Then, if Fig.13 As shown in FIG, the second photosensitive resin pattern PR' is used as a mask to sequentially form a second inorganic layer 363' and a second organic layer 361'. The second inorganic material layer 360b and the second organic material layer 360a may be etched by a dry etching process and an ashing process.

[0128] Next, the second photosensitive resin pattern PR' is removed, an imprint process is performed on the etched metal layer 22b to form the polarization layer 22, and an insulating layer 365 and a common electrode 370 are sequentially stacked, thereby providing a Figure 5 The color conversion panel 30 shown in FIG.

[0129] In the following, reference will be made to Figures 14 to 17 An image of a peripheral area according to the example and the comparative example will be described. Fig.14 , Fig.15 and Fig.16 shows an image of a peripheral area of ​​a display device according to a comparative example, and Fig.17 Images of peripheral areas of display devices according to examples and comparative examples are shown.

[0130] Specifically, Fig.14 , Fig.15 and Fig.16 An image of a device in which a second organic layer and a second inorganic layer are disposed in the peripheral area PA is shown. It is seen that a peeling phenomenon occurs in the second organic layer disposed in the peripheral area PA.

[0131] according to Fig.17 In (a) and (b), as indicated by the quadrilateral frame, it is seen that the peeling phenomenon strongly occurs in the peripheral region in the comparative example in which the resin corresponding to the second organic layer is provided in the peripheral region.

[0132] In contrast, according to Fig.17 In (c) and (d), it can be seen that, in the example where the resin corresponding to the second organic layer is hardly provided in the peripheral region, no or almost no peeling occurs in the peripheral region where the second organic layer and the second inorganic layer are removed.

[0133] According to exemplary embodiments of the present invention, a display device can be provided which can reduce the peeling phenomenon occurring in the peripheral region and improve reliability by removing the second organic layer and the second inorganic layer disposed in the peripheral region in the color conversion panel.

[0134] While the inventive concept has been described in connection with what are presently considered to be practical exemplary embodiments, it is to be understood that the inventive concept is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

Claims

1. A display device, comprising: A thin film transistor panel including a display area and a peripheral area; and A color conversion panel is stacked with the thin film transistor panel. Wherein, the color conversion panel comprises: substrate; a color conversion layer disposed between the substrate and the thin film transistor panel and comprising semiconductor nanocrystals; A first organic layer, disposed between the color conversion layer and the thin film transistor panel; A second organic layer, disposed between the first organic layer and the thin film transistor panel; a polarizing layer, disposed between the second organic layer and the thin film transistor panel; and a second inorganic layer, disposed between the second organic layer and the polarizing layer, wherein the first organic layer overlaps the display area and the peripheral area, and the second organic layer overlaps the display area, and Wherein, neither the second organic layer nor the second inorganic layer overlaps the peripheral region.

2. The display device according to claim 1, further comprising: The first inorganic layer is disposed between the first organic layer and the second organic layer.

3. The display device according to claim 2, wherein: The first inorganic layer overlaps the display area and the peripheral area, and the second inorganic layer overlaps the display area, and The edge of the second inorganic layer is disposed between the display area and the edge of the thin film transistor panel, and the edge of the thin film transistor panel is adjacent to the edge of the second inorganic layer.

4. The display device according to claim 2, further comprising: A dummy color filter layer is overlapped with the peripheral area.

5. The display device according to claim 4, wherein: The dummy color filter layer overlaps the first organic layer and the first inorganic layer.

6. The display device according to claim 4, wherein: The dummy color filter layer in a plan view does not overlap the second organic layer and the second inorganic layer in a plan view.

7. A display device, comprising: A thin film transistor panel including a display area and a peripheral area; and A color conversion panel is stacked with the thin film transistor panel. Wherein, the color conversion panel comprises: substrate; a color conversion layer disposed between the substrate and the thin film transistor panel and comprising semiconductor nanocrystals; A first organic layer, disposed between the color conversion layer and the thin film transistor panel; A second organic layer, disposed between the first organic layer and the thin film transistor panel; a polarizing layer, disposed between the second organic layer and the thin film transistor panel; and a second inorganic layer, disposed between the second organic layer and the polarizing layer, wherein the first organic layer overlaps the display area and the peripheral area, and the second organic layer overlaps the display area, and The second organic layer and the second inorganic layer both partially overlap the peripheral region.

8. The display device according to claim 7, further comprising: The first inorganic layer is disposed between the first organic layer and the second organic layer.

9. The display device according to claim 8, wherein: The first inorganic layer overlaps the display region and the peripheral region, and the second inorganic layer overlaps the display region.

10. The display device according to claim 8, further comprising: A dummy color filter layer is overlapped with the peripheral area.

11. The display device according to claim 10, wherein: The dummy color filter layer overlaps the first organic layer and the first inorganic layer.

12. The display device according to claim 10, wherein: The dummy color filter layer in a plan view partially overlaps the second organic layer and the second inorganic layer in a plan view.

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