Back-emitting light source array device and electronic device having the same

Abstract

A back-emitting light source array device and an electronic device are provided. The back-emitting light source array device comprises: a substrate; a distributed Bragg reflector (DBR) disposed on a first surface of the substrate; a plurality of gain layers disposed on the DBR, the plurality of gain layers being spaced apart from each other, and each of the plurality of gain layers being configured to generate light respectively; and a nanostructure reflector disposed on the plurality of gain layers opposite to the DBR and comprising a plurality of nanostructures having a sub-wavelength size, wherein the reflectivity of the DBR is less than the reflectivity of the nanostructure reflector, so that the generated light is emitted through the substrate.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to U.S. Provisional Application No. 62 / 721,083 filed in the U.S. Patent and Trademark Office on August 22, 2018, and Korean Patent Application No. 10-2019-0043779 filed in the Korean Intellectual Property Office on April 15, 2019, the disclosures of which are incorporated herein by reference in their entirety. Technical Field

[0003] Example embodiments of the present disclosure relate to a back-emitting light source array device including a plurality of vertical cavity surface emitting lasers (VCSELs) and emitting light toward a substrate, and an electronic device including the back-emitting light source array device, wherein the VCSELs include a nanostructure reflector. Background Art

[0004] In recent years, in object recognition, such as with respect to people and other objects, there has been an increasing need to accurately recognize the shape, position, and movement of an object through accurate three-dimensional shape recognition. For example, lasers are often used as sensors for three-dimensional shape recognition.

[0005] Since vertical cavity surface emitting lasers (VCSELs) exhibit a lower optical gain length than edge emitting lasers (EELs), VCSELs are advantageous in reducing power consumption and increasing integration. In addition, EELs exhibit asymmetric light output, but VCSELs provide a circularly symmetric output pattern, so VCSELs can be effectively connected to optical fibers and perform stable high-speed modulation with low noise.

[0006] VCSEL includes a distributed Bragg reflector (DBR) to constitute a laser resonator, wherein the DBR exhibits a high reflectivity of about 90% or more. The DBR may include dozens of stacked structures of two materials with different refractive indices to obtain high reflectivity. Due to the phonon scattering occurring at the boundary of the two materials, the DBR exhibits low thermal conductivity (or high heat resistance). A technology and method is needed that can improve light control and light emission characteristics while compensating for the shortcomings of the DBR. Summary of the invention

[0007] One or more example embodiments provide a backside emitting type light source array device including a plurality of vertical cavity surface emitting lasers (VCSELs) and configured to emit light toward a substrate.

[0008] One or more example embodiments provide an electronic device including a back side emitting light source array device including a plurality of VCSELs.

[0009] Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of example embodiments.

[0010] According to one aspect of an example embodiment, there is provided a back-emitting light source array device, comprising: a substrate; a distributed Bragg reflector (DBR) disposed on a first surface of the substrate; a plurality of gain layers disposed on the DBR, the plurality of gain layers being spaced apart from each other, and each of the plurality of gain layers being configured to generate light, respectively; and a nanostructure reflector disposed on the plurality of gain layers opposite to the DBR, and the nanostructure reflector comprising a plurality of nanostructures having sub-wavelength sizes, wherein a reflectivity of the DBR is less than a reflectivity of the nanostructure reflector, so that the generated light is emitted through the substrate.

[0011] The back-emitting light source array device may further include: a meta-surface layer disposed on a second surface of the substrate opposite to the first surface.

[0012] The metasurface layer may include a meta-lens, a meta-prism or a meta-diffractive element.

[0013] The metasurface layer may have sub-wavelength dimensions and may include nanostructures having a refractive index greater than a reflectivity of a material disposed around the nanostructures.

[0014] At least one of the thickness, width, and arrangement pitch of each of the multiple nanostructures of the nanostructure reflector may be less than or equal to half the wavelength of the light, and at least one of the thickness, width, and arrangement pitch of each of the multiple nanostructures of the metasurface layer may be less than or equal to one third of the wavelength of the light.

[0015] The back-emitting light source array device may further include: a heat sink, which is disposed on the nanostructure reflector and is opposite to the plurality of gain layers.

[0016] The substrate may include a Group III-V semiconductor substrate.

[0017] A p-type contact layer may be disposed in the nanostructure reflector, and a p-type contact metal may be disposed in the p-type contact layer.

[0018] The plurality of gain layers may be arranged in an n×m matrix array, wherein n and m are natural numbers, and the p-type contact metal may be correspondingly arranged to overlap two or more columns of the n×m matrix array of the plurality of gain layers.

[0019] The back-emitting light source array device may further include: an aperture layer, which is arranged on the p-type contact metal.

[0020] The back-emitting light source array device may further include: an insertion layer disposed on the aperture layer.

[0021] The back-emitting light source array device may further include: an n-type contact layer disposed between the DBR and the plurality of gain layers.

[0022] The back-emitting light source array device may further include: a dummy gain layer that does not generate light; and an n-type contact metal supported by the dummy gain layer, disposed at both ends of the DBR, and connected to the n-type contact layer.

[0023] The plurality of gain layers may be arranged in an n×m matrix array, wherein n and m are natural numbers, and the n-type contact layer and the n-type contact metal are correspondingly arranged to overlap two or more rows of the n×m matrix array of the plurality of gain layers.

[0024] The back-emitting light source array device may further include: wiring, which is arranged on the heat sink.

[0025] The back-emitting light source array device may further include: a bonding layer disposed between the nanostructure reflector and the heat sink.

[0026] The back-emitting light source array device may further include: a heat-conducting layer disposed between the nanostructure reflector and the heat sink.

[0027] The back-emitting light source array device may further include: a p-type contact layer disposed on the nanostructure reflector; an n-type contact layer disposed between the DBR and the plurality of gain layers; and an insulating protection layer disposed between the p-type contact layer and the n-type contact layer.

[0028] According to one aspect of an example embodiment, an electronic device is provided, comprising: a back-emitting light source array device configured to irradiate light to a target object; a sensor configured to receive light reflected from the target object; and a processor configured to obtain information about the target object based on the light received by the sensor, wherein the back-emitting light source array device comprises: a substrate; a distributed Bragg reflector (DBR) disposed on a first surface of the substrate; a plurality of gain layers disposed on the DBR, the plurality of gain layers being spaced apart from each other, and each of the plurality of gain layers being configured to generate light respectively; and a nanostructure reflector disposed on the plurality of gain layers opposite to the DBR, and the nanostructure reflector comprising a plurality of nanostructures having sub-wavelength sizes, wherein a reflectivity of the DBR is less than a reflectivity of the nanostructure reflector, so that light is emitted through the substrate.

[0029] The electronic device may further include: a meta-surface layer disposed on a second surface of the substrate opposite to the first surface.

[0030] The electronic device may further include: a heat sink disposed on the nanostructure reflector.

[0031] The electronic device may further include: a p-type contact layer disposed on the nanostructure reflector; and a p-type contact metal disposed on the p-type contact layer.

[0032] The plurality of gain layers may be arranged in an n×m matrix array, wherein n and m are natural numbers, and the p-type contact metal is correspondingly arranged to overlap two or more columns of the n×m matrix array of the plurality of gain layers.

[0033] The electronic device may further include: an n-type contact layer disposed between the DBR and the plurality of gain layers.

[0034] The electronic device may further include: a dummy gain layer that does not generate light; and an n-type contact metal supported by the dummy gain layer, disposed at both ends of the DBR, and connected to the n-type contact layer.

[0035] The plurality of gain layers may be arranged in an n×m matrix array, wherein n and m are natural numbers, and the n-type contact layer and the n-type contact metal are correspondingly arranged to overlap two or more rows of the n×m matrix array of the plurality of gain layers. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] The above and / or other aspects will become clear and more easily understood from the following description of example embodiments in conjunction with the accompanying drawings, in which:

[0037] Figure 1 is a schematic diagram of a back-emitting light source array device according to an example embodiment;

[0038] Figure 2 yes Figure 1 A view of a vertical cavity surface emitting laser (VCSEL) of a back-emitting light source array device shown;

[0039] Figure 3 Yes Figure 1 A view of the structure including a dummy gain layer of the back-emitting light source array device shown;

[0040] Figure 4 yes Figure 1 A view showing an example of a nanostructure of a metasurface layer of a back-emitting light source array device;

[0041] Figure 5 yes Figure 1 A view of another example of a nanostructure of a meta-surface layer of a back-emitting light source array device is shown;

[0042] Figures 6 to 12 yes Figure 1 Various examples of nanostructures of a metasurface layer of a back-emitting light source array device are shown;

[0043] Fig.13 is a schematic diagram of a wiring structure of a back-emitting light source array device according to an example embodiment;

[0044] Fig.14 is a schematic diagram of an example of a wiring structure of a back-light-emitting light source array device according to an example embodiment;

[0045] Fig.15 is a schematic diagram of another example of a wiring structure of a back-emitting light source array device according to an example embodiment;

[0046] Fig.16 is along Fig.15 A cross-sectional view taken along line II;

[0047] Fig.17 is a view of a back-emitting light source array device according to another example embodiment;

[0048] Fig.18 is a schematic diagram of an electronic device according to an example embodiment;

[0049] Fig.19 is a schematic diagram of an electronic device according to another example embodiment; and

[0050] Fig. 20 yes Fig.19 A perspective view of an example appearance of an electronic device. DETAILED DESCRIPTION

[0051] Reference will now be made in detail to the example embodiments shown in the accompanying drawings, wherein similar reference numerals throughout the accompanying drawings represent similar elements. In this regard, the example embodiments may have different forms and should not be construed as being limited to the descriptions set forth herein. Therefore, the example embodiments are described below only by reference to the accompanying drawings to explain various aspects. As used herein, the term "and / or" includes any and all combinations of one or more items in the associated listed items. Statements such as "at least one of..." modify the entire list of elements when they are after the list of elements, rather than modifying the individual elements in the list. For example, the statement "at least one of a, b, and c" should be understood to include only a, only b, only c, both a and b, both a and c, both b and c, or all of a, b, and c.

[0052] In the accompanying drawings, for the sake of clarity of explanation, the size and thickness of each element may be exaggerated. Although terms such as "first", "second" and the like may be used to describe various elements, these elements are not necessarily limited to the above terms. The above terms may only be used to distinguish one element from another element.

[0053] Expressions in the singular encompass plural expressions unless they have clearly different meanings in the context. In addition, unless explicitly described to the contrary, the word "include" and variations such as "contain" or "comprise" will be understood to mean including the elements described but not excluding any other elements. Moreover, when it is described that a certain material layer exists on a substrate or another layer, the material layer may exist in direct contact with the substrate or another layer, and an additional third layer may exist between them. In addition, the materials constituting the layers in the following exemplary embodiments are only examples, and other materials may also be used.

[0054] In addition, the terms "unit", "machine", and "module" described in the specification refer to a unit for processing at least one function and operation, and can be implemented by a hardware component or a software component and a combination thereof.

[0055] The specific implementations described in the example embodiments are illustrative and not limiting in any way. For clarity of description, descriptions of conventional electronic configurations, control systems, software, and other functional aspects of these systems may be omitted. Moreover, the connections of connecting members or lines between components shown in the figures are examples of functional connections and / or physical connections or circuit connections, which may be replaced by or provided in addition by various functional connections, physical connections, or circuit connections.

[0056] The use of the term "the" and similar referential terms may refer to both the singular and the plural.

[0057] The operations constituting the method may be performed in any suitable order unless explicitly stated to be performed in the described order. In addition, the use of all exemplary terms (e.g., etc.) is intended only to illustrate the technical ideas and should not be interpreted as limiting the scope of the terms unless further limited by the claims.

[0058] Figure 1 is a schematic diagram of a back-emitting light source array device according to example embodiments.

[0059] Reference Figure 1 The back-emitting light source array device may include: a substrate 10; a distributed Bragg reflector (DBR) 20 disposed on the substrate 10; a plurality of gain layers 30 arranged on the DBR 20 at intervals from each other; and a plurality of nanostructure reflectors 36, which are arranged to correspond to the plurality of gain layers 30 respectively.

[0060] A heat sink 40 for dissipating heat generated by the plurality of nanostructure reflectors 36 may be provided.

[0061] The substrate 10 may be a semiconductor substrate, for example, a group III-V semiconductor substrate. However, example embodiments are not limited thereto.

[0062] The DBR 20, the plurality of gain layers 30, and the plurality of nanostructure reflectors 36 may constitute a vertical cavity surface emitting laser (VCSEL). A VCSEL is a semiconductor laser diode that emits light in a direction perpendicular to the laser surface.

[0063] The DBR 20 may have a structure in which a first material layer 21 and a second material layer 22 having different refractive indices are repeatedly and alternately stacked. The reflectivity of the DBR 20 may be adjusted by adjusting at least one of the difference between the refractive indices of the first material layer 21 and the second material layer 22, the thickness of the first material layer 21 and the second material layer 22, and the number of times the first material layer 21 and the second material layer 22 are stacked. For example, the first material layer 21 and the second material layer 22 may each have a thickness of one quarter of the desired emission wavelength of light and may be repeatedly and alternately stacked. The DBR 20 may include a material that is the same as or similar to the semiconductor material constituting the gain layer 30. For example, the first material layer 21 may be Al x Ga (1-x) As layer (where 0≤x≤1), the second material layer 22 may be Al y Ga (1-y)As layer (where 0≤y≤1, x≠y), but example embodiments are not limited thereto. The first material layer 21 and the second material layer 22 of the DBR 20 may be undoped layers, but in some examples, the first material layer 21 and the second material layer 22 may be doped layers of a certain semiconductor type. The materials constituting the DBR 20 are not limited to the above materials, and various materials capable of forming a refractive index difference may be used for the first material layer 21 and the second material layer 22. The DBR 20 may be a flat plate-like reflector layer, and may have a plate-like structure to cover a plurality of gain layers 30. The DBR 20 may be considered as a common reflector layer of a plurality of gain layers 30.

[0064] The gain layer 30 is a layer configured to absorb energy to generate light. For example, the gain layer 30 can generate light by injecting current or by pumping light. The gain layer 30 may include an active layer 32 containing a semiconductor material. The active layer 32 may include, for example, a III-V semiconductor material or a II-VI semiconductor material. For example, the active layer 32 may include a multi-quantum well (MQW) structure including indium gallium arsenide (InGaAs), aluminum gallium arsenide (AlGaAs), aluminum gallium nitride (AlGaN), indium gallium arsenide phosphide (InGaAsP), indium gallium phosphide (InGaP) or aluminum gallium indium phosphide (AlGaInP). According to example embodiments, the active layer 32 may include quantum dots. The material and configuration of the active layer 32 are not limited thereto and may vary. A first cladding layer 31 and a second cladding layer 33 may also be provided below and above the active layer 32. Both the first cladding layer 31 and the second cladding layer 33 may include an n-type semiconductor material, a p-type semiconductor material or an intrinsic semiconductor material. The first cladding layer 31 and the second cladding layer 33 may include the same semiconductor material as the active layer 32 , and may further include an n-type dopant or a p-type dopant.

[0065] The nanostructure reflectors 36 may be arranged corresponding to the plurality of gain layers 30, respectively. The nanostructure reflectors 36 and the DBR 20 may emit light generated by the gain layer 30 to amplify and output light of a specific wavelength band. For light amplification, the reflectivity of the DBR 20 and the nanostructure reflector 36 may be set to about 90% or more. For example, the reflectivity of the DBR 20 and the nanostructure reflector 36 may be set to 98% or more. In an example embodiment, the light generated by the gain layer 30 may resonate between the DBR 20 and the nanostructure reflector 36 and then be emitted through the substrate 10. For example, the DBR 20 may be configured to have a reflectivity lower than that of the nanostructure reflector 36, so that the light repeatedly reflected between the DBR 20 and the nanostructure reflector 36 may be emitted to the outside through the DBR 20 and the substrate 10. Therefore, a back-emitting light source array device may be realized. The reflectivity of the DBR 20 may be adjusted by changing the composition and thickness of the first material layer 21 and the second material layer 22 and the number of times the first material layer 21 and the second material layer 22 are stacked. For example, the reflectivity of the nanostructure reflector 36 can be adjusted by changing the materials constituting the nanostructure 36a and the support layer 36b, the size of the nanostructure 36a, and the arrangement of the nanostructure 36a.

[0066] Figure 2 yes Figure 1 A magnified view of the VCSEL in Figure 1. Figure 2 , the nanostructure reflector 36 may include a plurality of nanostructures 36a having a sub-wavelength size. Here, the sub-wavelength size may be a thickness or a width that is smaller than the operating wavelength of the nanostructure reflector 36 as a size defining the shape of the nanostructure 36a. The operating wavelength of the nanostructure reflector 36 may be within the wavelength band of the light generated by the gain layer 30, and may indicate a wavelength λ of the light L emitted between the DBR 20 and the nanostructure reflector 36 in the light generated by the gain layer 30. This may be an emission wavelength λ.

[0067] The nanostructure 36a includes a material having a refractive index higher than that of the surrounding material (e.g., air), and can be configured to reflect light of a specific wavelength band based on size, specific shape, and arrangement scheme. The nanostructure 36a can have a metastructure type. When at least one of the thickness, width, and arrangement spacing of the nanostructure 36a is equal to or less than 1 / 2 of the emission wavelength λ, the nanostructure 36a can have a metastructure. For example, when the width of the nanostructure 36a is less than or equal to 1 / 2 of the emission wavelength λ, the nanostructure 36a can operate as a scattering unit, and when the arrangement spacing becomes less than the emission wavelength λ, the light incident on the nanostructure 36a can be controlled to have a desired shape without high-order diffraction. For example, when the thickness of the nanostructure 36a can be less than or equal to 1 / 2 of the emission wavelength λ, the nanostructure 36a can exhibit a relatively high reflectivity. However, the thickness of the nanostructure 36a is not limited thereto.

[0068] The nanostructure 36a may include a dielectric or semiconductor material. For example, the nanostructure 36a may include single crystal silicon (Si), polycrystalline silicon, amorphous silicon, silicon nitride (Si 3 N 4 ), gallium phosphide (GaP), titanium dioxide (TiO 2 ), aluminum antimonide (A1Sb), aluminum arsenide (AlAs), aluminum gallium arsenide (A1GaAs), aluminum gallium indium phosphide (A1GaInP), boron phosphide (BP) and zinc germanium phosphide (ZnGeP 2 ). Alternatively, the nanostructure 36a may include a conductive material. As a conductive material, a highly conductive metal material capable of causing surface plasmon excitation may be used. For example, at least one selected from copper (Cu), aluminum (Al), nickel (Ni), iron (Fe), cobalt (Co), zinc (Zn), titanium (Ti), ruthenium (Ru), rhodium (Rh), palladium (Pd), platinum (Pt), silver (Ag), osmium (Os), iridium (Ir) and gold (Au) may be used as a conductive material, or an alloy including any of the above metals may be used as a conductive material. In addition, a two-dimensional material with good conductivity, such as graphene or a conductive oxide, may be used. Alternatively, a portion of the nanostructure 36a may include a dielectric material with a high refractive index, and the remainder of the nanostructure 36a may include a conductive material.

[0069] The nanostructure reflector 36 may include a support layer 36b supporting a plurality of nanostructures 36a. The support layer 36b may include a material with a refractive index smaller than that of the nanostructures 36a. For example, the support layer 36b may include SiO 2, transparent conductive oxide (TCO) or polymer, such as polycarbonate (PC), polystyrene (PS) or polymethyl methacrylate (PMMA). The material constituting the support layer 36b is not limited thereto, and in some cases, the support layer 36b may include a semiconductor material. The support layer 36b and the nanostructure 36a may include the same or similar semiconductor material. For example, the support layer 36b and the nanostructure 36a may both include a III-V semiconductor compound. In addition, by adjusting the composition ratio of the compound, the refractive index of the support layer 36b can be made less than the refractive index of the nanostructure 36a. The difference between the refractive index of the support layer 36b and the nanostructure 36a may be about 0.5 or greater.

[0070] The second cladding layer 33 of the gain layer 30 may further include an aperture layer 34 for adjusting the mode or beam size of the emitted light. The aperture layer 34 may include a specific oxide. Here, the aperture layer 34 is shown as being formed below the gain layer 30, but example embodiments are not limited thereto. For example, the aperture layer 34 may be disposed on top of the gain layer 30. In addition, a plurality of aperture layers 34 may be provided or the aperture layer 34 may be omitted. The aperture layer 34 may further include an insertion layer 35. The insertion layer 35 may include a semiconductor material of the same type or a similar type as the gain layer 30. The insertion layer 35 may be doped with specific impurities.

[0071] When applied to a three-dimensional shape recognition sensor, the VCSEL may emit a laser beam of about 850nm or 940nm, or may emit light in the near-infrared band. However, the wavelength of the emitted light is not particularly limited, and may emit light in a band required for an application utilizing structured light, or may emit light in a band required for an application utilizing scanning light.

[0072] A first contact layer 25 may be provided between the DBR 20 and the gain layer 30. The first contact layer 25 may be provided to correspond to each of the plurality of gain layers 30. For example, when the gain layers 30 are arranged in the form of an n×m (n and m are natural numbers) matrix array, the first contact layer 25 may be provided to correspond collectively to the gain layers 30 arranged in any one row. According to example embodiments, the first contact layer 25 may be provided to correspond collectively to the gain layers 30 arranged in two or more rows. The first contact layers 25 adjacent to each other may be spaced apart.

[0073] Reference Figure 1 A dummy gain layer 301 including a dummy active layer 321 that does not generate light may be disposed at both ends of the DBR 20 . Figure 3 is an enlarged view of the dummy gain layer 301. Figure 3, the dummy gain layer 301 may include a first cladding layer 31 and a second cladding layer 33. The dummy gain layer 301 may be configured not to be applied with a voltage to generate light. A first contact metal 39 for applying a voltage to the first contact layer 25 may be provided in the dummy gain layer 301. The first contact metal 39 may be supported by the dummy gain layer 301 and may extend to the first contact layer 25 and be electrically connected to the first contact layer 25.

[0074] For example, the first contact layer 25 may be an n-type contact layer, and the first contact metal 39 may be an n-type contact metal. However, example embodiments are not limited thereto, and the first contact layer 25 may be a p-type contact layer, and the first contact metal 39 may be a p-type contact metal. The first contact layer 25 may include a transparent conductive material through which light may be transmitted. The second contact layer 28 may be disposed on the other surface of the gain layer 30. A second contact metal 38 for applying a voltage to the second contact layer 28 may be disposed. For example, the second contact layer 28 may be a p-type contact layer, and the second contact metal 38 may be a p-type contact metal. The second contact layer 28 may be disposed adjacent to the nanostructure reflector 36. Since the dummy gain layer 301 is not connected to the second contact metal 38, no voltage is supplied to the dummy gain layer 301, and thus no light is generated.

[0075] An insulating protective layer 37 for electrical isolation may also be provided between the first contact layer 25 and the second contact metal 38 or between the first contact layer 25 and the second contact layer 28. When the gain layer 30 is arranged in the form of an n×m (n and m are natural numbers) matrix array, the second contact metal 38 may be coupled to the second contact layer 28, and the second contact layer 28 is provided to correspond to the gain layer 30 arranged in any one row. In addition, the second contact layers 28 provided in each column may be arranged to be separated from each other. The electrical wiring structure will be described later.

[0076] When power is turned on through the first contact metal 39 and the second contact metal 38, the gain layer 30 generates light. The light may resonate between the DBR 20 and the nanostructure reflector 36 and be emitted to the outside through the substrate 10.

[0077] Reference Figure 1 , a meta-surface layer 15 may be further provided on the other surface of the substrate 10. The meta-surface layer 15 may include a meta-lens, a meta-prism or a meta-diffraction element.

[0078] The meta-surface layer 15 may have a sub-wavelength size and may include a nanostructure 15a having a relatively high refractive index and a material having a relatively low refractive index around the nanostructure 15a. The nanostructure 15a may be disposed on the support layer 15b. For example, at least one of the thickness, width, and arrangement spacing of the nanostructure 36a of the nanostructure reflector 36 has a value less than or equal to half the wavelength of light, and at least one of the thickness, width, and arrangement spacing of the nanostructure 15a of the meta-surface layer 15 may have a value equal to or less than two-thirds of the wavelength of light. However, this is merely an example, and example embodiments are not limited thereto.

[0079] The nanostructure 15a may include a dielectric or semiconductor material. For example, the nanostructure 15a may include single crystal silicon, polycrystalline silicon, amorphous silicon, Si 3 N 4 , GaP, TiO 2 , AlSb, AlAs, AlGaAs, AlGaInP, BP and ZnGeP 2 According to example embodiments, the nanostructure 15a may include a conductive material. As the conductive material, a highly conductive metal material capable of causing surface plasmon excitation may be used. For example, at least one selected from Cu, Al, Ni, Fe, Co, Zn, Ti, Ru, Rh, Pd, Pt, Ag, Os, Ir, and Au may be used as the conductive material, or an alloy including any of the above metals may be used as the conductive material. In addition, a two-dimensional material with good conductivity, such as graphene or a conductive oxide, may be used. According to example embodiments, some of the nanostructures 15a may include a dielectric material having a relatively high refractive index, and the remaining portion of the nanostructure 15a may include a conductive material.

[0080] The support layer 15b may include a material with a refractive index smaller than that of the nanostructure 15a. For example, the support layer 15b may include SiO 2 , transparent conductive oxide (TCO) or polymer, such as polycarbonate (PC), polystyrene (PS) or polymethyl methacrylate (PMMA). The material constituting the support layer 15b is not limited thereto, and in some cases, the support layer 15b may include a semiconductor material. The support layer 15b and the nanostructure 15a may include the same or similar semiconductor material. For example, the support layer 15b and the nanostructure 15a may both include a III-V semiconductor compound. In addition, by adjusting the composition ratio of the compound, the refractive index of the support layer 15b may be less than the refractive index of the nanostructure 15a. The difference between the refractive index of the support layer 15b and the nanostructure 15a may be about 0.5 or more. However, example embodiments are not limited thereto.

[0081] Figure 4 yes Figure 1 A perspective view of an example of the metasurface layer in FIG.

[0082] Reference Figure 4 The meta-surface layer 151 may include a support layer 151 b and a plurality of nanostructures 151 a disposed on the support layer 151 b. Figure 4 An example in which the nanostructure 151a is arranged in a rectangular lattice shape is shown, but example embodiments are not limited thereto. The nanostructure 151a may have any of various shapes such as a cylindrical shape, an elliptical cylindrical shape, and a rectangular cylindrical shape. Here, a case in which the nanostructure 151a has a cylindrical shape is shown. The nanostructure 151a may be arranged, for example, in a radial shape.

[0083] Figure 5 yes Figure 1 A cross-sectional view of another example of an elemental surface layer in FIG.

[0084] Reference Figure 5 , the meta-surface layer 151 may include a support layer 151 b and a plurality of nanostructures 151 a disposed in the support layer 151 b. Figure 5 An example in which the nanostructures 151a are arranged in a rectangular lattice shape is shown. In addition, the nanostructures 151a may also be arranged in a hexagonal lattice shape, and the arrangement shape may vary. In addition, the meta-surface layer 151 may include another supporting layer 151c.

[0085] Figure 6 FIG. 4 is a perspective view of a structure of another example of a nanostructure that can be applied to a metasurface layer.

[0086] Reference Figure 6 , the nanostructure 152 may have a long axis in a first direction (e.g., an X-axis direction on an XY plane) and a short axis in a second direction (e.g., a Y-axis direction). The dimension in the long axis direction may be referred to as a length L, and the dimension in the short axis direction may be referred to as a width W. On the other hand, the dimension in the Z-axis direction may be referred to as a thickness T or a height H. The length L may be greater than the width W, and the nanostructure 152 may have an elliptical shape or a shape similar thereto on the XY plane. It can be said that the nanostructure 152 has an anisotropic structure.

[0087] The width W, length L and / or thickness T of the nanostructure 152 may be less than or equal to half of the emission wavelength λ. Furthermore, when the nanostructures 152 are regularly arranged, the interval between two adjacent nanostructures 152 (e.g., the interval between the centers of the two nanostructures 152) may be equal to or less than two-thirds of the emission wavelength λ.

[0088] The anisotropic structure of the nanostructure 152 may vary widely. For example, the nanostructure 152 may have an anisotropic structure other than an elliptical shape in the XY plane. Figure 7 and Figure 8 An example of this is shown in FIG.

[0089] Reference Figure 7 , the nanostructure 153 may have a rectangular column shape. The nanostructure 153 may have a rectangular anisotropic structure on the XY plane.

[0090] Reference Figure 8 , the nanostructure 154 may have a cross-shaped column structure. At this time, the length L in the X-axis direction may be greater than the width W in the Y-axis direction. Therefore, it can be said that the nanostructure 154 has an anisotropic structure.

[0091] As above Figures 6 to 8 As described above, when the nanostructures 152, 153, and 154 have an anisotropic structure, the polarization direction of light incident on the nanostructures 152, 153, and 154 can be controlled by using an array of the nanostructures 152, 153, and 154. By arranging the nanostructures 152, 153, and 154 having an anisotropic structure in a specific direction, light incident on the nanostructures 152, 153, and 154 can be controlled to be polarized in a specific direction. However, the structures of the nanostructures 152, 153, and 154 are merely examples, and various modifications may be made therein.

[0092] According to example embodiments, the metasurface layer 15 may be designed to function as a metalens, a metaprism, or a metadiffraction element. The size distribution and arrangement rule of the plurality of nanostructures constituting the metasurface layer 15 may be designed so that the metasurface layer 15 functions as a concave lens, a convex lens, a prism, or a diffraction element.

[0093] Fig. 9 is a cross-sectional view of a schematic structure of a nanostructure of a meta-surface layer according to another example embodiment.

[0094] Reference Fig. 9 , the meta-surface layer 155 may include a support layer 155a and a plurality of nanostructures 155b disposed on the support layer 155a. The size distribution and arrangement rule of the plurality of nanostructures 155b may be designed so that the meta-surface layer 155 functions as a concave lens. For example, the width W of the plurality of nanostructures 155b may increase as the distance d from the center of the meta-surface layer 155 increases. When the position of the nanostructure 155b is defined as the distance d from the center of the meta-surface layer 155, the width W of the nanostructure 155b at a given position may be set to a specific value so that the meta-surface layer 155 operates as a concave lens or a convex lens. As the distance d from the center of the meta-surface layer 155 increases, the width W of the nanostructure 155b may increase.

[0095] In another example, you can repeat Fig. 9The variation rule of the width W of the nanostructure 155b is described in FIG. Fig.10 An example of this is shown in FIG.

[0096] Reference Fig.10 , the meta-surface layer 156 may include a support layer 156a and a plurality of nanostructures 156b, wherein the width W of the plurality of nanostructures 156b may increase in a direction away from the center of the meta-surface layer 156 according to a certain rule. The meta-surface layer 156 may be divided into a plurality of regions according to a distance in a direction away from the center O, and the width W of the plurality of nanostructures 156b in the plurality of regions may increase in a direction away from the center O. Here, it is the following case: the width W increases from the center (d=0) to the position R1, and as the distance d increases from the position R1, the width W increases again. The period of repeating the increase rule of the width W may vary. The meta-surface layer 156 may be used as a concave lens or a convex lens.

[0097] When the metasurface layers 155 and 156 are used as concave lenses or convex lenses, the light emitted from one or more VCSELs can have a specific shape and a specific intensity distribution on the space of interest. By setting the focal length of the metasurface layers 155 and 156 used as concave lenses or convex lenses close to the emission surface of the VCSEL, the light beam emitted from the VCSEL can be emitted at different angles with a specific divergence or collimation. Therefore, the illumination pattern on the space of interest can be adjusted. In addition, by using the following reference Figures 13 to 17 The described method can sequentially drive one or more of the multiple VCSELs each time according to the irradiation time to scan the space of interest as needed according to time. The optical properties of the meta-surface layers 155 and 156 can be controlled by adjusting the size distribution and arrangement rules of the multiple nanostructures constituting the meta-surface layers 155 and 156, and thus beam forming and beam shaping of the emitted light can be performed.

[0098] Fig.11 is a cross-sectional view of a schematic structure of a meta-surface layer according to another example embodiment.

[0099] Reference Fig.11 , the meta-surface layer 157 may include a support layer 157a and a plurality of nanostructures 157b disposed on the support layer 157a. The size distribution and arrangement rule of the plurality of nanostructures 157b may be designed so that the meta-surface layer 157 functions as a concave lens or a convex lens. For example, the width W of the plurality of nanostructures 157b may decrease as the distance d from the center of the meta-surface layer 157 increases. As the distance d from the center O of the meta-surface layer 157 increases, the width W of the nanostructure 157b may decrease.

[0100] You can repeat the above reference Fig.11 The variation rule of the width W of the nanostructure 157b is described. Fig.12 An example of this is shown in FIG.

[0101] Reference Fig.12 The meta-surface layer 158 may include a support layer 158a and a plurality of nanostructures 158b, wherein the width W of the plurality of nanostructures 158b may decrease in a direction away from the center O of the meta-surface layer 158 according to a certain rule. The meta-surface layer 158 may be divided into a plurality of regions according to a distance in a direction away from the center O, and the width W of the plurality of nanostructures 158b in the plurality of regions may decrease in a direction away from the center O. The period of repeating the rule of decreasing the width W may vary. The meta-surface layer 158 may be used as a convex lens or a concave lens. In a manner similar to that described above with reference to Fig.10 In the manner described, the space of interest can be illuminated in various ways.

[0102] The sizes and arrangements of the plurality of nanostructures may be arranged such that the metasurface layer is configured to deflect incident light. The arrangement rules and size distribution of the plurality of nanostructures may be arranged such that the widths or sizes of the plurality of nanostructures gradually decrease or increase in one direction (e.g., the horizontal direction). In addition, the corresponding arrangement may be repeated on a two-dimensional surface as a periodic unit. According to example embodiments, the widths and sizes of the plurality of nanostructures may be randomly arranged in one direction (e.g., the horizontal direction). The metasurface layer 15 may be used in a VCSEL, and various adjustments may be made to control the optical properties of the emitted light, such as beam diameter, convergence / divergence / collimation shape, and orientation, and may also be made to control the polarization direction of the emitted light. At the same time, the above reference Figures 4 to 12 The described nanostructures can also be applied to the nanostructured reflector 36 .

[0103] Fig.13 is a schematic plan view of a wiring structure of a back-emitting light source array device according to an example embodiment.

[0104] Reference Fig.13, a back-emitting light source array device may include an active area A100 in which a plurality of VCSELV10 are arranged. The active area A100 may include a plurality of first wirings W10 and a plurality of second wirings W20 electrically connected to the plurality of VCSELs V10. For example, the first wiring W10 may correspond to a first contact metal, and the second wiring W20 may correspond to a second contact metal. The back-emitting light source array device may also include a first driver D10 electrically connected to the plurality of first wirings W10 and a second driver D20 electrically connected to the plurality of second wirings W20. When a voltage is applied to any one of the first wirings W10 by the first driver D10 and a voltage is applied to any one of the second wirings W20 by the second driver D20, the VCSEL at the point where the first wiring W10 to which the voltage is applied and the second wiring W20 intersect may emit light. In an example embodiment, the first wiring W10 and the second wiring W20 may be disposed on a heat sink 40 (see Figure 1 )middle.

[0105] Fig.14 is a schematic plan view of a wiring structure of a back-light emitting array according to an example embodiment.

[0106] Reference Fig.14 , a plurality of first contact metal patterns r1 to r8 extending in a first direction (direction A) and a plurality of second contact metal patterns c1 to c13 extending in a second direction (direction B) intersecting the first direction (direction A) may be provided in the heat sink 40. The plurality of first contact metal patterns r1 to r8 may be arranged to be separated from each other. The plurality of second contact metal patterns c1 to c13 may be arranged to be separated from each other. The plurality of first contact metal patterns r1 to r8 may be row wirings, and the plurality of second contact metal patterns c1 to c13 may be column wirings. Each of the first contact metal patterns r1 to r8 may include a first contact layer 25 (see Figure 1 ) and the first contact metal 39 (see Figure 1 Each of the second contact metal patterns c1 to c13 may include a second contact layer 28 (see Figure 1 ) and the second contact metal 38 (see Figure 1 ). The number of the plurality of first contact metal patterns r1 to r8 and the number of the plurality of second contact metal patterns c1 to c13 are merely examples and may vary. The VCSEL V20 may be disposed at a point where the plurality of first contact metal patterns r1 to r8 and the plurality of second contact metal patterns c1 to c13 intersect. The dummy gain layer V30 may be disposed on both sides of the plurality of first contact metal patterns r1 to r8.

[0107] According to the cathode operating point and the anode operating point, the VCSEL V20 can be operated individually (2D operation) or row by row (1D operation). For example, when the VCSEL V20 is indicated as a matrix, when the first contact metal pattern r1 and the second contact metal pattern c1 are powered, VCSEL (1, 1) is turned on, and when the first contact metal pattern r1 and the second contact metal pattern c2 are powered, VCSEL (1, 2) is turned on. Therefore, the VCSEL V20 can be driven individually and controlled two-dimensionally. The VCSEL V20 can be operated row by row and driven one-dimensionally. For example, when the first row of the first contact metal pattern r1 is turned on and the second contact metal patterns c1-c13 are selectively turned on and off at the same time, the first row of the contact metal pattern r1 can be operated. When the second row of the first contact metal pattern r2 is turned on and the second contact metal patterns c1-c13 are selectively turned on and off at the same time, the second row of the contact metal pattern r2 can be operated. When the first contact metal patterns r1 to r8 can be selectively turned on and off at the same time and the first column second contact metal pattern c1 is turned on, the first column second contact metal pattern can be operated. When the first contact metal patterns r1 to r8 can be selectively turned on and off at the same time and the second column second contact metal pattern c2 is turned on, the second column second contact metal pattern c2 can be operated. Therefore, row-by-row emission control can be performed.

[0108] The operation will be described below Fig.14 The method of the back-emitting light source array device shown in FIG.

[0109] The single VCSEL operation method is performed as follows:

[0110] VCSEL (1, 1) is on: r1 is on and c1 is on

[0111] VCSEL (1, 2) is on: r1 is on and c2 is on ......

[0113] VCSEL (8, 13) is on: r8 is on and c13 is on

[0114] The row-by-row VCSEL operation method is performed as follows:

[0115] VCSEL (row 1) is on: r1 is on and c1 to c13 are on

[0116] VCSEL (row 2) is on: r2 is on and c1 to c13 are on ......

[0118] VCSEL (row 8) is on: r8 is on and c1 to c13 are on

[0119] Another row-by-row VCSEL operation method is performed as follows:

[0120] VCSEL (column 1) is turned on: r1~r8 are turned on and c1 is turned on

[0121] VCSEL (column 2) is turned on: r1~r8 are turned on and c2 is turned on ......

[0123] VCSEL (column 13) is on: r1~r8 are on and c13 is on

[0124] As described above, in the single VCSEL operation method, a plurality of VCSELs may be operated individually. In the row-by-row operation method, each row of VCSELs may be operated sequentially, or each column of VCSELs may be operated sequentially. In each method, the operation order may be changed.

[0125] By electrically controlling the emission of the VCSEL as described above, the back-emitting light source array device according to the example embodiment can be applied to a scanner for light scanning or a structured light projector. For example, light scanning can be performed by controlling the VCSEL to emit light sequentially and controlling the traveling direction of the light by using the metasurface layer 15. Structured light can be formed by controlling the VCSEL to emit light simultaneously and forming patterned light by using the metasurface layer 15. A three-dimensional image of a target object can be obtained by using a scanner or a structured light projector.

[0126] Next, Fig.15 is a view of a wiring structure of a back-light-emitting light source array device according to another example embodiment.

[0127] Reference Fig.15, a plurality of first contact metal pattern groups R1 to R5 extending in a first direction (direction A) and a plurality of second contact metal pattern groups C1 to C6 extending in a second direction (direction B) intersecting the first direction (direction A) may be provided in the heat sink 40. The plurality of first contact metal row groups R1 to R5 may collectively include a plurality of row wirings, and the plurality of second contact metal column groups C1 to C6 may collectively include a plurality of column wirings. For example, the plurality of row wirings included in the first contact metal row groups R1 to R5 may be operated as a cathode (an n-type contact layer), and the plurality of column wirings included in the second contact metal column groups may be operated as an anode (a p-type contact layer). The number of the plurality of first contact metal row groups R1 to R5, the number of the plurality of row wirings included in the plurality of first contact metal row groups R1 to R5, the number of the plurality of second contact metal column groups C1 to C6, and the number of the plurality of column wirings included in the plurality of second contact metal column groups C1 to C6 are merely examples and may be changed. The plurality of VCSELs V20 may be disposed at points where the plurality of first contact metal pattern groups R1 to R5 intersect the plurality of second contact metal pattern groups C1 to C6. The dummy gain layers V30 may be disposed corresponding to the plurality of first contact metal pattern groups R1 to R5, respectively.

[0128] Fig.16 It is applied Fig.15 A view of a back-emitting light source array device with a wiring structure. Fig.16 shows that along with Fig.15 The structure corresponds to the cross section taken along line II in FIG. Fig.16 In the Figure 1 Detailed description of the components denoted by the same reference numerals in FIG. 1 is provided. The gain layer 30 may be arranged in an n×m (n and m are natural numbers) matrix array, and the second contact metal 381 (e.g., p-type contact metal) may be provided to correspond to two or more columns of gain layer groups. In addition, the first contact layer 25 (e.g., n-type contact layer) and the first contact metal 391 (e.g., n-type contact metal) may be provided to correspond to two or more rows of gain layer groups.

[0129] Reference Fig.16 , the second contact metal 381 may have a structure commonly corresponding to the gain layers 30 disposed in three columns. The first contact metal 391 may have a structure commonly corresponding to the gain layers 30 disposed in three rows and the dummy gain layers 301 disposed in three rows.

[0130] The operation will be described below Fig.15 The method of the back-emitting light source array device shown in FIG.

[0131] The operation method of a single VCSEL group is as follows:

[0132] VCSEL (1, 1) group is turned on: R1 is turned on and C1 is turned on

[0133] VCSEL (1, 2) group is turned on: R1 is turned on and C2 is turned on ......

[0135] VCSEL (5, 6) group is turned on: R5 is turned on and C6 is turned on

[0136] The row-by-row VCSEL group operation method is performed as follows:

[0137] VCSEL (row 1) is on: R1 is on and C1 to C6 are on

[0138] VCSEL (row 2) is turned on: R2 is turned on and C1 to C6 are turned on ......

[0140] VCSEL (5th row group) is turned on: R5 is turned on and C1~C6 are turned on

[0141] The row-by-row VCSEL group operation method is performed as follows:

[0142] VCSEL (1st column group) is turned on: R1~R5 are turned on and C1 is turned on

[0143] VCSEL (second column group) is turned on: R1~R5 are turned on and C2 is turned on

[0144] VCSEL (6th column group) is turned on: R1~R5 are turned on and C6 is turned on

[0145] In this way, grouping of row wiring and column wiring can achieve faster electrical driving.

[0146] Fig.17 is a view of a back-emitting light source array device according to another example embodiment.

[0147] Reference Fig.17 , Fig.17 Back-emitting light source array device and Figure 1 The difference between the back-emitting light source array device of FIG. 1 and FIG. 2 is that at least one layer is provided between the nanostructure reflector 36 and the heat sink 40. Fig.17 Only the differences are described, and the Figure 1 The components denoted by the same reference numerals are described herein.

[0148] A bonding layer 51 may be further provided between the nanostructure reflector 36 and the heat sink 40. The bonding layer 51 may include a metal. An insulating layer 53 may be further provided between the bonding layer 51 and the heat sink 40. In addition, a thermal conductive layer 55 may be further provided between the insulating layer 53 and the heat sink 40. The thermal conductive layer 55 may allow the heat generated by the VCSEL to be efficiently dissipated to the heat sink 40.

[0149] Since the back-emitting light source array device according to the example embodiment emits light through the substrate 10, the back-emitting light source array device may include a heat sink 40 having a wiring structure coupled to the nanostructure reflector 36, so that the heat generated by the VCSEL can be discharged more effectively. Therefore, the error and life deterioration caused by heating can be reduced or solved. In addition, the back-emitting light source array device can be easily manufactured by a semiconductor process without being restricted by the light emitting direction. In addition, since VCSEL can contribute to the miniaturization of the back-emitting light source array device, improve the operating speed and reduce the power consumption and diversify the optical properties of the emitted light, the back-emitting light source array device including the VCSEL can be applied to various fields including optical sensors and photonic integrated circuit (IC) systems, and can also be applied to various other electronic devices and optical devices.

[0150] Fig.18 is a block diagram showing a schematic structure of an electronic device (optical device) according to the embodiment.

[0151] Reference Fig.18 , the electronic device according to the example embodiment may include: a light source 1000 that irradiates light L10 toward a target object OBJ; and a sensor 2000 that detects light L20 emitted from the light source 1000 and modulated by the target object OBJ. Here, the light source 1000 may include a back-emitting light source array device according to the example embodiment. In addition, the electronic device may further include an analyzer 3000 for analyzing the light detected by the sensor 2000 and analyzing at least one of the physical properties, shape, position, and movement of the target object OBJ.

[0152] Between the light source 1000 and the target object OBJ, an optical element may be arranged to perform additional operations, such as adjusting the orientation of the light generated by the light source 1000 toward the target object OBJ, adjusting the beam size, or modulating the light into patterned light. Figure 1) is appropriately designed to perform these operations, such optical elements may be omitted. The sensor 2000 senses the light L20 modulated (reflected) by the target object OBJ. The sensor 2000 may include an array of light detecting elements. The sensor 2000 may also include a spectral element for analyzing the light L20 modulated (reflected) by the target object OBJ according to wavelength.

[0153] The analyzer 3000 may analyze at least one of the physical properties, shape, position, and movement of the target object OBJ by analyzing the light received by the sensor 2000. The 3D shape, position, and movement of the target object OBJ may be analyzed by comparing the pattern of the light L10 irradiated to the target object OBJ with the pattern of the light L20 reflected by the target object OBJ. The material properties of the target object OBJ may be analyzed by analyzing the wavelength of light excited by the target object OBJ due to the incident light (e.g., the light L10).

[0154] The electronic device according to the example embodiment may further include a controller for controlling the operation of the light source 1000 or the operation of the sensor 2000, and may further include a memory in which a calculation program for extracting three-dimensional information to be executed by the analyzer 3000 is stored. Information about the calculation result of the analyzer 3000, that is, about the shape, position, material properties, etc. of the target object OBJ, may be sent to another unit. For example, the information may be sent to a controller of a device employing the electronic device.

[0155] The electronic device according to the example embodiment can also be used as a sensor for accurately obtaining three-dimensional information about a front object, so the electronic device can be used in various devices. Such devices may include, for example, autonomous operating devices such as unmanned vehicles, autonomous driving vehicles, robots, and drones, and may also include augmented reality devices, mobile communication devices, Internet of Things (IOT) devices, etc.

[0156] Reference Fig.17 The configuration of the electronic device (optical device) described is only an example, and the back-emitting light source array device according to the example embodiment can be applied to various electronic devices (optical devices). The back-emitting light source array device can be applied to various fields such as imaging devices, projectors, scanners, and sensors.

[0157] The backside emission type light source array device of example embodiments may be used in various electronic devices for illuminating a target object through a display panel.

[0158] Fig.19 is a block diagram illustrating a schematic configuration of an electronic device according to an example embodiment.

[0159] The electronic device 4000 may include a display 4100 that irradiates light Li to a target object OBJ, a sensor 4300 that receives light Lr reflected by the target object OBJ, and a processor 4200 that performs calculations for obtaining information about the target object OBJ based on the light received from the sensor 4300. The display 4100 may include a back-emitting light source array device 4110 for irradiating light and a display panel 4120 for displaying an image.

[0160] The electronic device 4000 may further include a memory 4400 in which codes or data used for calculation by the processor 4200 are stored.

[0161] The light Li emitted from the back-emitting light source array device 4110 may illuminate the target object OBJ through the transmission window of the display panel 4120 .

[0162] The back-emitting light source array device 4110 can illuminate or scan the target object OBJ with structured light. The sensor 4300 senses the light Lr reflected by the target object OBJ. The sensor 4300 may include an array of light detection elements. The sensor 4300 may also include a spectral element for analyzing the light reflected by the target object OBJ according to wavelength.

[0163] The processor 4200 performs calculations for obtaining information about the target object OBJ based on the light received from the sensor 4300, and may also manage processing and control of the entire electronic device 4000. The processor 4200 may obtain and process information about the target object OBJ, such as 2-dimensional or 3-dimensional image information, and may also overall control the operation of the back-light-emitting light source array device 4110 and the operation of the sensor 4300. The processor 4200 may also determine whether a user is authenticated, etc. based on the information obtained from the target object OBJ, and may also execute other applications.

[0164] The memory 4400 may store codes for execution in the processor 4200, and may also store various execution modules and data thereof to be executed by the electronic device 4000. For example, the memory 4400 may store program codes used by the processor 4200 to perform calculations for obtaining information about the target object OBJ, and codes such as application modules that may be executed by using the information about the target object OBJ. In addition, the memory 4400 may also store a communication module, a camera module, a motion image playback module, an audio playback module, etc., as programs for operating devices that may be additionally provided in the electronic device 4000.

[0165] The result of the calculation performed by the processor 4200, i.e., the information about the shape and position of the target object OBJ, can be sent to another device or another unit as needed. For example, the information about the target object OBJ can be sent to a controller of another electronic device that uses the information about the target object OBJ. The other unit to which the result of the calculation is sent can be a display device or printer that outputs the result. In addition, the other unit can be, but is not limited to: a smart phone, a mobile phone, a personal digital assistant (PDA), a laptop personal computer (PC), a desktop PC, various wearable devices, and other mobile or fixed computing devices.

[0166] The memory 4400 may include at least one of the following types of storage media: flash memory, hard disk, multimedia card, card-type memory (e.g., SD or XD memory), random access memory (RAM), static RAM (SRAM), read-only memory (ROM), electrically erasable programmable ROM (EEPROM), programmable ROM (PROM), magnetic memory, disk, optical disk, etc.

[0167] For example, the electronic device 4000 may be, but is not limited to, a portable mobile communication device, a smart phone, a smart watch, a PDA, a laptop PC, a desktop PC, and other mobile or fixed computing devices. The electronic device 4000 may be an autonomous operating device, such as an unmanned vehicle, an autonomous driving vehicle, a robot, and a drone, or an Internet of Things (IoT) device.

[0168] Fig. 20 yes Fig.19 A perspective view of an example of an electronic device.

[0169] like Fig. 20 As shown, the electronic device 4000 may adopt a full-screen display. For example, the electronic device 4000 may be a frameless type, in which the display surface 4100a occupies almost the entire area of ​​the front of the electronic device 4000. Moreover, the shape of the display surface 4100a may be a rectangular shape without a notch.

[0170] As described above, the back-emitting light source array device according to the exemplary embodiment may be disposed on the back of the display panel and illuminate the front of the display panel through transmission windows uniformly distributed over the entire display surface or transmission windows having a certain size formed in one area. Fig. 20 The illustrated borderless and notchless display may be applied to the electronic device 4000 .

[0171] The implementations described in the example embodiments are illustrative and do not limit the scope of the present disclosure in any way. For clarity of description, descriptions of conventional electronic configurations, control systems, software, and other functional aspects of these systems may be omitted. In addition, the connections of connecting members or lines between components shown in the figures are examples of functional connections and / or physical connections or circuit connections, which may be replaced by or provided in addition by various functional connections, physical connections, or circuit connections.

[0172] It should be understood that the example embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects in each example embodiment should generally be considered as available for other similar features or aspects in other embodiments.

[0173] Although example embodiments have been described with reference to the accompanying drawings, it will be understood by those skilled in the art that various changes in form and details may be made without departing from the spirit and scope of the invention as defined by the following claims.

Claims

1. A back-emitting light source array device, comprising: substrate; A distributed Bragg reflector DBR is disposed on the first surface of the substrate; a plurality of gain layers disposed on the DBR, the plurality of gain layers being spaced apart from each other, and each of the plurality of gain layers being configured to generate light respectively; as well as A plurality of nanostructure reflectors are respectively arranged on the plurality of gain layers and opposite to the DBR, each of the plurality of nanostructure reflectors comprises a plurality of nanostructures having a sub-wavelength size, wherein each of the plurality of nanostructure reflectors is disposed on a corresponding gain layer among the plurality of gain layers, wherein the DBR, the plurality of gain layers and the plurality of nanostructure reflectors constitute a VCSEL in a vertical cavity surface emitting laser (VCSEL) array, wherein the reflectivity of the DBR is less than the reflectivity of each of the plurality of nanostructure reflectors, so that the generated light is emitted through the substrate, and The DBR is configured as a common reflector layer for the plurality of gain layers arranged in an array.

2. The back-emitting light source array device according to claim 1, further comprising: A meta-surface layer is disposed on a second surface of the substrate opposite to the first surface.

3. The back-emitting light source array device according to claim 2, in, The metasurface layer includes a meta-lens, a meta-prism or a meta-diffraction element.

4. The back-emitting light source array device according to claim 2, in, The metasurface layer has sub-wavelength dimensions and includes nanostructures having a refractive index greater than a reflectivity of a material disposed around the nanostructures.

5. The back-emitting light source array device according to claim 2, in, At least one of a thickness, a width, and an arrangement pitch of each nanostructure of the plurality of nanostructures of the nanostructure reflector is less than or equal to half the wavelength of the light, and Wherein, at least one of the thickness, width and arrangement pitch of each of the plurality of nanostructures of the meta-surface layer is less than or equal to two-thirds of the wavelength of the light.

6. The back-emitting light source array device according to claim 1, further comprising: A heat sink is disposed on the plurality of nanostructure reflectors and opposite to the plurality of gain layers.

7. The back-emitting light source array device according to claim 1, in, The substrate includes a Group III-V semiconductor substrate.

8. The back-emitting light source array device according to claim 1, in, A p-type contact layer is disposed on each of the plurality of nanostructure reflectors, and a p-type contact metal is disposed on the p-type contact layer.

9. The back-emitting light source array device according to claim 8, in, The plurality of gain layers are arranged in an n×m matrix array, wherein n and m are natural numbers, and the p-type contact metal is correspondingly arranged to overlap two or more columns of the n×m matrix array of the plurality of gain layers.

10. The back-emitting light source array device according to claim 8, further comprising: An aperture layer is disposed on each of the plurality of gain layers.

11. The back-emitting light source array device according to claim 10, further comprising: The insertion layer is arranged on the aperture layer.

12. The back-emitting light source array device according to claim 1, further comprising: An n-type contact layer is disposed between the DBR and the plurality of gain layers.

13. The back-emitting light source array device according to claim 12, further comprising: a dummy gain layer that generates no light; as well as An n-type contact metal supported by the dummy gain layer is disposed at both ends of the DBR, and the n-type contact metal is connected to the n-type contact layer.

14. The back-emitting light source array device according to claim 13, in, The plurality of gain layers are arranged in an n×m matrix array, wherein n and m are natural numbers, and the n-type contact layer and the n-type contact metal are correspondingly arranged to overlap two or more rows of the n×m matrix array of the plurality of gain layers.

15. The back-emitting light source array device according to claim 6, further comprising: The wiring is arranged on the heat sink.

16. The back-emitting light source array device according to claim 6, Also includes: A bonding layer is disposed between the nanostructure reflector and the heat sink.

17. The back-emitting light source array device according to claim 6, Also includes: The heat conducting layer is arranged between the nanostructure reflector and the heat sink.

18. The back-emitting light source array device according to claim 1, further comprising: a p-type contact layer disposed on each of the plurality of nanostructure reflectors; An n-type contact layer is disposed between the DBR and the plurality of gain layers; as well as The insulating protection layer is arranged between the p-type contact layer and the n-type contact layer.

19. An electronic device comprising: The back-emitting light source array device according to claim 1, configured to irradiate light onto a target object; a sensor configured to receive light reflected from the target object; as well as A processor is configured to obtain information about the target object based on the light received by the sensor.

20. The electronic device according to claim 19, further comprising: A meta-surface layer is disposed on a second surface of the substrate opposite to the first surface.

21. The electronic device according to claim 19, further comprising: A heat sink is disposed on the plurality of nanostructure reflectors.

22. The electronic device according to claim 19, further comprising: a p-type contact layer disposed on each of the plurality of nanostructure reflectors; as well as The p-type contact metal is disposed on the p-type contact layer.

23. The electronic device according to claim 22, in, The plurality of gain layers are arranged in an n×m matrix array, wherein n and m are natural numbers, and the p-type contact metal is correspondingly arranged to overlap two or more columns of the n×m matrix array of the plurality of gain layers.

24. The electronic device according to claim 19, further comprising: An n-type contact layer is disposed between the DBR and the plurality of gain layers.

25. The electronic device according to claim 24, further comprising: a dummy gain layer that generates no light; as well as An n-type contact metal supported by the dummy gain layer is disposed at both ends of the DBR, and the n-type contact metal is connected to the n-type contact layer.

26. The electronic device according to claim 25, in, The plurality of gain layers are arranged in an n×m matrix array, wherein n and m are natural numbers, and the n-type contact layer and the n-type contact metal are correspondingly arranged to overlap two or more rows of the n×m matrix array of the plurality of gain layers.

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