A wire feeding system for producing high-purity nano-scale cuprous oxide-coated Dumet wire

Abstract

The present invention discloses a wire feeding system for producing high-purity nano-scale cuprous oxide-coated Dumet wire, which includes a synchronous wire feeding shaft, a first wire splitting wheel, a second wire splitting wheel, and a wire passing wheel. The wire material is sequentially sent out by the synchronous wire feeding shaft, the first wire splitting wheel, the second wire splitting wheel, and the wire passing wheel. The system also includes a tension control system and a wire material plasma ultra-purification processor to assist in improving the wire feeding quality. The present invention optimizes the high precision and stability of the wire feeding system during the production process of Dumet wire. Through the cooperation of the synchronous wire feeding shaft, the first wire splitting wheel, the second wire splitting wheel, and the wire passing wheel, the raw wire can be stable to ensure the smooth completion of subsequent processes, thereby improving the uniformity of the overall quality of Dumet wire. By setting up a tension control system, when the wire feeding system is unstable, it can be adjusted actively in time to further improve the wire feeding stability; and avoid the problems of harmful substance residues on the surface of the wire material and secondary flushing water pollution.

Description

Technical Field

[0001] The present invention belongs to the field of sealing and manufacturing of semiconductors, vacuum devices and lighting equipment, and relates to the manufacture of nanometer ultra-high purity Cu2O Dumet wire materials for sealing of electric light source semiconductors, vacuum devices and lighting equipment, and specifically relates to a wire unwinding system for producing high-purity nanometer-level cuprous oxide coated Dumet wires. Background Art

[0002] The red, white, yellow and boron-free Dumet wires commonly used in the market are heated to 850-1400℃ by ordinary power frequency in H2 or liquefied petroleum gas environment, and then coated or uncoated and sintered. This coating or uncoated sintering process after slow heating to generate Cu2O generally separates the oxidation furnace for generating cuprous oxide on the surface of the Dumet wire from the sintering furnace for generating cuprous oxide. The disadvantage of this process is that the surface temperature of the wire is always above 400℃ during the transition from the oxidation furnace to the sintering furnace. In fact, this process cannot ensure that the surface coating of the Dumet wire generates 100% cuprous oxide, or Dumet The surface of the wire has more or less fine cracks when observed under a microscope. Because it has not been sintered to generate Cu2O and has been in contact with the air for a short time, the surface of the Dumet wire will conditionally contact the air and change into a certain proportion of copper oxide. The subsequent sintering process in the sintering furnace has not been seamlessly coated with a PVA anti-oxidation film or (coated with borax (Na2B4O7)) and dried with a hot air source. Such a production process has inherent defects in controlling the quality of Dumet wire products, which can easily affect the 100% copper-free surface of the finished Dumet wire when used as semiconductor and lighting glass sealing, thereby ensuring density and special storage conditions, leading to an increase in unstable factors in the quality of downstream products and reducing the overall economic benefits of society. At the same time, this method of producing Dumet wire is to place the hollow quartz glass tube in the high-temperature atmosphere of the heating furnace and apply the gas that generates Cu2O, which will shorten the service life of the hollow quartz glass tube. Generally, it will be scrapped after no more than 170 hours of use. Therefore, production costs and quality control have become bottlenecks for products to occupy market share.

[0003] Moreover, in the existing Dumet wire production process, wire unwinding and surface cleaning are required in the early stage. In the existing production process, the wire unwinding process is simple, and the wire unwinding speed is controlled only by controlling the speed of the raw wire shaft, which easily leads to unstable wire unwinding speed. Moreover, during surface cleaning, mainly acid material surface pickling + running water rinsing method is used. This cleaning method is likely to leave harmful oxides on the surface of the bare wire, affecting the production quality of Dumet wire. Therefore, for the existing Dumet wire production process in the market, there are still the following problems to be improved: 1. Improve the simple process of the existing wire unwinding process and enhance the stability of the wire unwinding process; 2. Chemical cleaning of the wire surface leaves harmful oxides and dirt on the wire surface, and secondary pollution to the environment is formed after running water rinsing. Summary of the Invention

[0004] Object of the Invention: The object of the present invention is to provide a wire unwinding system for producing high-purity nano-level cuprous oxide-coated Dumet wire that is easy to control and can greatly improve the production quality of Dumet wire in view of the deficiencies of the prior art.

[0005] Technical Solution: A wire unwinding system for producing high-purity nano-level cuprous oxide-coated Dumet wire according to the present invention includes a synchronous wire unwinding shaft, a first wire splitting wheel, a second wire splitting wheel, and a wire passing wheel. The wire material is sent out by the synchronous wire unwinding shaft, the first wire splitting wheel, the second wire splitting wheel, and the wire passing wheel in sequence.

[0006] Further, to improve the stability of the wire unwinding speed, a tension control system is further included. The tension control system includes a balance connecting rod and a balance weight. One end of the balance connecting rod is connected to the rotating shaft of the first wire splitting wheel, and the other end is connected to the balance weight. The dynamic balance positioning of the wire unwinding system is realized by the balance connecting rod and the balance weight.

[0007] Further, as a preferred implementation, the centers of the synchronous wire unwinding shaft and the first wire splitting wheel are on the same plumb line, and the centers of the second wire splitting wheel and the wire passing wheel are on the same horizontal line; the second wire splitting wheel is located at the lower right of the first wire splitting wheel, and the inclination angle is 30° to 60°.

[0008] Further, as a preferred implementation, both the first wire splitting wheel and the second wire splitting wheel are three-pass wire splitting wheels.

[0009] Further, to improve the quality of wire feeding, the system further includes a wire material plasma super purification processor: The wire material plasma super purification processor includes a cleaning protection cover. The cleaning protection cover is provided with a wire material inlet and a wire material outlet. The cleaning protection cover is connected to a microwave source, and the microwave source and a DC power supply form a double specific frequency difference, which is controlled by a program-controlled power supply to supply the plasma super purification processor.

[0010] Furthermore, to improve the relative sealing performance of the wire during the cleaning process and prevent the wire surface from being oxidized and contaminated again, sealing bodies are provided inside both the wire inlet and the wire outlet. The sealing body has a frustum structure, with the small head end extending into the interior of the cleaning and protection cover. A wire guiding hole is provided at the center of the sealing body, and the wire passes through the guiding hole.

[0011] Furthermore, to improve the cleaning effect, the frequency difference range between the microwave source and the DC power supply is 2455 MHz - 100 kHz.

[0012] Beneficial effects: (1) The present invention optimizes the high precision and stability of the wire feeding system during the production process of Dumet wire. Through the cooperation of the synchronous wire releasing shaft, the first wire splitting wheel, the second wire splitting wheel, and the wire passing wheel, the raw wire can be stable, ensuring the smooth completion of subsequent processes, and further improving the uniformity of the overall quality of Dumet wire; (2) By setting up a tension control system, when the wire feeding system becomes unstable, it can be adjusted actively and in a timely manner to further improve the wire feeding stability; (3) This system is also equipped with a wire material plasma ultra-purification processor, which uses microwave cleaning and activation to process the raw wire. On the one hand, it avoids the residue of oxidants caused by chemical drug treatment; on the other hand, it reduces the problem of secondary pollution of the flushing water; (4) This wire feeding system is paired with a subsequent integrated Cu2O coating production system, which improves the production quality of Cu2O, and the purity can basically reach 100%, greatly improving the production quality of Dumet wire. Description of the Drawings

[0013] Figure 1 is the overall structural schematic diagram of the system of the present invention;

[0014] Among them: 1. Wire feeding system, 11. Synchronous wire feeding shaft, 12. First wire splitting wheel, 13. Second wire splitting wheel, 14. Wire passing wheel, 15. Tension control system, 151. Balance connecting rod, 152. Balance weight, 2. Wire material plasma ultra-purification processor, 21. Cleaning protective cover, 211. Sealing body, 3. Wire material Cu2O coating generation system, 30. Cleaning port, 31. Cu2O coating production screen, 32. Wire guiding constant speed wheel, 33. Third wire splitting wheel, 34. Upper electrode guiding wheel, 35. Integrated mixed gas reaction and sintering chamber, 351. Gas reaction tube, 352. Magnetron cavity, 353. Magnetron inner cavity, 354. Mixed gas inlet, 355. Shielding outer shell, 356. Mixed gas outlet, 36. Lower electrode guiding wheel, 37. PVA solution infiltration tank, 38. Wind-heat system, 39. Synchronous constant speed wire take-up wheel, 311. First pressing arm, 312. Second pressing arm, 313. Pressing wheel, 314. Rotating pressure damping device, 315. Transmission belt, 4. Wire take-up system, 41. Guiding and straightening assembly, 411. Rotatable shaping and straightening rubber pressing roller, 412. Guiding tube, 413. Guiding tube fixing hoop, 414. Support plate, 42. Drop-type synchronous wire take-up barrel, 421. Synchronous wire take-up machine base, 422. Electric drive motor, 423. Transmission shaft, 424. Cross tray plate, 425. Cross tray, 5. Wire material, 6. Controlled by PLC intelligent control system. Detailed implementation mode

[0015] The technical solution of the present invention will be described in detail below with reference to the accompanying drawings, but the protection scope of the present invention is not limited to the described embodiments.

[0016] Embodiment: A wire feeding system 1 for producing high-purity nano-scale cuprous oxide-coated Dumet wire includes a synchronous wire feeding shaft 11, a first wire splitting wheel 12, a second wire splitting wheel 13, and a wire passing wheel 14. The wire material is successively sent out by the synchronous wire feeding shaft 11, the first wire splitting wheel 12, the second wire splitting wheel 13, and the wire passing wheel 14. This wire feeding system can be applied to a dual-frequency programmed power integrated differential method Dumet wire production process system, specifically including: successively including a wire feeding system 1, a wire material plasma ultra-purification processor 2, a wire material coating generation system 3, and a wire take-up system 4. The wire material 5 is introduced into the inlet of the wire material plasma ultra-purification processor 2 from the wire feeding system 1, introduced into the inlet of the wire material coating generation system 3 from the outlet of the wire material plasma ultra-purification processor 2, and introduced into the wire take-up system 4 from the outlet of the wire material coating generation system 3. The operations of the wire feeding system 1, the wire material plasma ultra-purification processor 2, the wire material coating generation system 3, and the wire take-up system 4 are all controlled by the PLC intelligent control system 6. A system programmed power supply is provided in the PLC intelligent control system 6 to control the power supply of the system.

[0017] The wire feeding system 1 includes a synchronous wire feeding shaft 11, a first wire splitting wheel 12, a second wire splitting wheel 13 and a wire passing wheel 14. The wire material is sent out by the synchronous wire feeding shaft 11, the first wire splitting wheel 12, the second wire splitting wheel 13 and the wire passing wheel 14 in sequence. Among them, both the first wire splitting wheel 12 and the second wire splitting wheel 13 are three-pass wire splitting wheels. It also includes a tension control system 15, which includes a balance connecting rod 151 and a balance weight 152. One end of the balance connecting rod 151 is connected to the rotating shaft of the first wire splitting wheel 12, and the other end is connected to the balance weight 152, and the dynamic balance positioning of the wire feeding system is realized by the balance connecting rod 151 and the balance weight 152.

[0018] The wire material plasma ultra-purification processor 2 includes a cleaning protective cover 21, on which there are a wire material inlet and a wire material outlet. The cleaning protective cover 21 is connected to a microwave source, and the microwave source and the DC power supply form a double specific frequency difference, and the supply of the integrated mixed gas reaction, sintering chamber, and plasma ultra-purification processor is controlled by a program-controlled power supply. The frequency difference range of the microwave source and the DC power supply is 2455 MHZ - 100 KHZ, and its power supply process is controlled by the system program-controlled power supply. There are sealing bodies 211 inside both the wire material inlet and the wire material outlet. The sealing body 211 is a frustum structure, with the small head end extending into the cleaning protective cover. A wire guiding hole is provided in the center of the sealing body, and the wire material passes through the guiding hole.

[0019] The wire material Cu2O coating generation system 3 includes a cleaning port 30, a Cu2O coating production screen 31, a wire guiding constant speed wheel 32, a third wire splitting wheel 33, an upper electrode guiding wheel 34, an integrated mixed gas reaction and sintering chamber 35, a lower electrode guiding wheel 36, a PVA solution infiltration tank 37, a hot air system 38 and a synchronous constant speed wire take-up wheel 39. The cleaned wire material is sent in through the cleaning port 30 and enters the Cu2O coating production screen 31, and in the Cu2O coating production screen, it passes through the wire guiding constant speed wheel 32, the third wire splitting wheel 33, the upper electrode guiding wheel 34, the integrated mixed gas reaction and sintering chamber 35, the lower electrode guiding wheel 36, the PVA solution infiltration tank 37, the hot air system 38 and the synchronous constant speed wire take-up wheel 39 in sequence to complete the Cu2O coating. The third wire splitting wheel 33 is a two-pass wire splitting wheel. A speed measurement feedback and an encoder are provided on the wire guiding constant speed wheel 33. The wire guiding constant speed wheel 33 is also equipped with a set of elastic automatic damping pressure wheels. The elastic automatic damping pressure wheels include a first pressure arm 311, a second pressure arm 312 and a pressure wheel 313. The first pressure arm 311 and the second pressure arm 312 are respectively arranged on both sides of the pressure wheel 313, and one end is connected to the rotating shaft of the pressure wheel 313. The other ends of the first pressure arm 311 and the second pressure arm 312 are fixed on the Cu2O coating production screen. Elastic components are also provided at the connection of the first pressure arm 311, the second pressure arm 312 and the rotating shaft of the pressure wheel 313 to realize the pressure wheel pressing tightly on the wire guiding constant speed wheel. A temperature detector and a temperature sensor are also provided inside the wire material coating generation system, and the temperature detector and the temperature sensor are connected to the PLC intelligent control system and are intelligently controlled through the PLC intelligent control system.

[0020] The synchronous constant-speed wire take-up wheel 39 is also equipped with a rotary pressure damping device 314. The rotary pressure damping device 314 is located directly above the synchronous constant-speed wire take-up wheel. The rotary pressure damping device 314 includes a set of rotating shafts arranged in an isosceles triangle. A roller is sleeved on the rotating shaft, and a conveyor belt 315 is sleeved on the roller. The bottom belt section of the rotary pressure damping device 314 surrounds the synchronous constant-speed wire take-up wheel 39. The rotary pressure damping device 314 rotates at a constant speed, and the damping adjustment of the synchronous constant-speed wire take-up wheel is realized through the conveyor belt 315, so that the synchronous constant-speed wire take-up wheel rotates at a constant speed.

[0021] The integrated mixed gas reaction and sintering chamber 35 includes a gas reaction tube 351, a magnetron cavity 352 and a magnetron inner cavity 353. Wire inlet and outlet are respectively arranged at both ends of the gas reaction tube. A mixed gas inlet 354 and a mixed gas outlet 356 are arranged at the inlet end of the gas reaction tube; The magnetron inner cavity 353 is sleeved outside the gas reaction tube 351, the magnetron cavity 352 is arranged outside the magnetron inner cavity 353, and a shielding shell 355 is sleeved outside the integrated mixed gas reaction and sintering chamber; Sealing bodies are arranged in the wire inlet and outlet. The sealing bodies are in a frustum structure, and the small head end extends into the cleaning protection cover. A wire guiding hole is arranged in the center of the sealing body, and the wire passes through the guiding hole; The mixed gas inlet is connected to the input pipelines of various gases, and intelligent gas flow meters are arranged on the input and output pipelines of each gas. The pressure of the mixed gas inlet is always greater than the pressure of the mixed gas outlet, and the monitoring gas flow accuracy reaches 0.001 ml / min.

[0022] The wire take-up system 4 includes a guiding and straightening component 41 and a drop-type synchronous wire take-up barrel 42. The guiding and straightening component 41 is fixed on the Cu2O coating production screen. The wire coated with Cu2O is taken into the drop-type synchronous wire take-up barrel 42 after passing through the guiding and straightening component 41;

[0023] The guiding and straightening component 41 includes a rotatable shaping and straightening rubber pressing roller 411, a guiding tube 412, a guiding tube fixing hoop 413 and a support plate 414; The guiding tube 412 is located downstream of the rotatable shaping and straightening rubber pressing roller 411. The support plate 414 is fixed on the Cu2O coating production screen, and the guiding tube 412 is fixed on the support plate 414 through a set of guiding tube fixing hoops.

[0024] The dropping type synchronous wire winding barrel 42 includes a synchronous wire winding machine base 421, an electric drive 422, a transmission shaft 423, a cross pallet plate 424 and a cross pallet 425. The synchronous wire winding machine base 421 is fixed downstream of the guiding and straightening assembly 41. The electric drive 422 is fixed on the synchronous wire winding machine base 421. The transmission shaft 423 is connected to the rotating shaft of the electric drive 422 through a coupling. The cross pallet plate 424 is fixed on the transmission shaft 423. The cross pallet 425 is fixed on the cross pallet plate 424. The four cross arms on the cross pallet are of a telescopic structure and can freely expand and contract in the radial direction.

[0025] In actual production, the raw wire is sequentially introduced into the first wire splitting wheel, the second wire splitting wheel and the wire passing wheel by the synchronous wire feeding shaft, and the stability of the wire feeding process is adjusted through the tension control system on the first wire splitting wheel; the wire is fed into the wire material plasma super purification processor through the wire passing wheel, and the surface of the wire material is decontaminated and activated through the action of the plasma. The cleaned wire material is fed into the wire material wrapping layer generation system, and the bare wire material is inserted into the integrated mixed cuprous oxide reaction and sintering chamber within a specific frequency difference; after the reaction chamber completes the preferential generation of ultra-pure cuprous oxide on the surface of the Dumet wire, the above surface without the formation of copper oxide factors is sintered; this structure of the ultra-fast heating of the Dumet wire surface and the integrated reaction and sintering chamber of the mixed gas becomes a sintering without a transition gap period and a process of being combined, dried and cured by the PVA surface antioxidant without a transition gap, thus generating the ultra-pure Cu2O highly dense nano-layer Dumet wire material required for various semiconductor, electro-vacuum device and lighting glass sealing; finally, it is fed into the wire winding system, passed through the guiding and straightening assembly and then wound into the dropping type synchronous wire winding barrel to complete the production and winding of the ultra-high purity Dumet wire.

[0026] As described above, although the present invention has been shown and described with reference to specific preferred embodiments, it should not be construed as a limitation of the present invention itself. Various changes can be made in its form and details without departing from the spirit and scope of the present invention defined by the appended claims.

Claims

1. A wire feeding system for producing high-purity nano-level cuprous oxide-coated Dumet wire, characterized in that: It includes a synchronous wire feeding shaft, a first wire splitting wheel, a second wire splitting wheel and a wire passing wheel, and the wire material is sent out by the synchronous wire feeding shaft, the first wire splitting wheel, the second wire splitting wheel and the wire passing wheel in sequence; It further includes a tension control system. The tension control system includes a balance connecting rod and a balance weight. One end of the balance connecting rod is connected to the rotating shaft of the first wire splitting wheel, and the other end is connected to the balance weight, and the dynamic balance positioning of the wire feeding system is realized by the balance connecting rod and the balance weight; The centers of the synchronous wire feeding shaft and the first wire splitting wheel are on the same plumb line, and the centers of the second wire splitting wheel and the wire passing wheel are on the same horizontal line; the second wire splitting wheel is located at the lower right of the first wire splitting wheel, and the inclination angle is 30-60°; Both the first wire splitting wheel and the second wire splitting wheel are three-pass wire splitting wheels; It further includes a wire material plasma ultra-purification processor: the wire material plasma ultra-purification processor includes a cleaning protective cover, on which there are a wire material inlet and a wire material outlet. The cleaning protective cover is connected to a microwave source, and the microwave source and a DC power supply form a double specific frequency difference, which is controlled by a programmed power supply and supplied to the plasma ultra-purification processor; It further includes a wire material Cu2O coating generation system, including: a cleaning port, a Cu2O coating production screen, a wire guiding constant speed wheel, a third wire splitting wheel, an upper electrode guiding wheel, an integrated mixed gas reaction, a sintering chamber, a lower electrode guiding wheel, a PVA solution infiltration tank, a wind heat system and a synchronous constant speed wire take-up wheel; the cleaned wire material is sent in from the cleaning port and enters the Cu2O coating production screen, and in the Cu2O coating production screen, it passes through the wire guiding constant speed wheel, the third wire splitting wheel, the upper electrode guiding wheel, the integrated mixed gas reaction, the sintering chamber, the lower electrode guiding wheel, the PVA solution infiltration tank, the wind heat system and the synchronous constant speed wire take-up wheel in sequence to complete the Cu2O coating; the third wire splitting wheel is a two-pass wire splitting wheel; the wire guiding constant speed wheel is provided with a speed measurement feedback and an encoder; the wire guiding constant speed wheel is also equipped with a set of elastic automatic damping pressure wheels. The elastic automatic damping pressure wheels include a first pressure arm, a second pressure arm and a pressure wheel. The first pressure arm and the second pressure arm are respectively arranged on both sides of the pressure wheel and one end is connected to the pressure wheel rotating shaft, and the other ends of the first pressure arm and the second pressure arm are fixed on the Cu2O coating production screen. An elastic component is also provided at the connection of the first pressure arm, the second pressure arm and the pressure wheel rotating shaft to realize the pressure wheel pressing tightly on the wire guiding constant speed wheel; a temperature detector and a temperature sensor are also provided in the wire material coating generation system, and the temperature detector and the temperature sensor are connected to a PLC intelligent control system and are intelligently controlled through the PLC intelligent control system.

2. The wire feeding system for producing the Dumet wire with a high-purity nano-scale cuprous oxide coating layer according to claim 1, characterized in that: Sealing bodies are arranged in both the wire material inlet and the wire material outlet. The sealing bodies are in a frustum structure, and the small head end extends into the cleaning protective cover. A wire guiding hole is arranged at the center of the sealing body, and the wire material passes through the guiding hole.

3. The wire feeding system for producing high-purity nano-scale cuprous oxide-coated Dumet wire according to claim 1, characterized in that: The frequency difference range of the microwave source and the DC power supply is 2455MHZ - 100KHZ.

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