Direct lightning protection device

Abstract

The present invention provides a direct lightning protection device. The device includes: a high-energy voltage-equalizing diffuser shield, a current conduction positioning shaft and a high-energy double exponential function charge loading chamber; the high-energy voltage-equalizing diffuser shield is arranged on the upper part of the device, the high-energy voltage-equalizing diffuser shield is rotationally connected to the current conduction positioning shaft, and the current conduction positioning shaft is electrically connected to the semiconductor inside the high-energy double exponential function charge loading chamber; a positioning lightning-receiving area is arranged at the center point of the highest curved surface of the high-energy voltage-equalizing diffuser shield, and a high-electric field focusing lightning-receiving positioning terminal of a cylindrical semicircular electric field is installed at the center point of the positioning lightning-receiving area. During the process of lightning-receiving with the atmospheric electric field, each lightning-receiving point of the device occurs at the high-electric field focusing lightning-receiving positioning terminal, and the high-energy double exponential function charge loading chamber attenuates the lightning current. The present invention locates the lightning-receiving phenomenon without the occurrence of circling and side flashes, can guarantee the lightning rolling effect to the maximum extent, and maximizes the technical significance of the functional lightning-receiving of the protection angle.

Description

Technical Field

[0001] The present invention relates to the technical field of lightning protection, and in particular to a direct lightning protection device. Background Art

[0002] On September 1, 2012, the General Armament Department of the Chinese People's Liberation Army promulgated GJB7581-2012 "Requirements for Lightning Protection of Mobile Communication Systems". The standard stipulates the scope of application and puts forward strict technical requirements for the protection of mobile communication systems against direct lightning and lightning electromagnetic pulses. The standard applies to the mandatory requirements for the design, development and use of direct lightning and lightning electromagnetic pulse protection of mobile communication systems. Part 4.6 of the standard stipulates that the direct lightning protection of mobile communication systems is Class A, and lightning electromagnetic pulses are Class B. The protection of mobile communication systems located in areas with many mines, high mines, and strong mines is Class A and Class B, and the protection of mobile communication systems located in areas with few mines is Class B. The standard stipulates that the direct lightning protection products of mobile communication systems are: semiconductor direct lightning protection devices (i.e., skylight direct lightning protection devices) with the most basic parameters (such as: protection angle>65°; lightning current>100KA, etc.). As the direct lightning protection device required by the standard, namely: semiconductor direct lightning protection device, it has been applied in some fields. Due to various technical reasons, many very critical and important technical parameters of the semiconductor direct lightning protection device cannot meet the requirements of the GJB 7581-2012 standard (such as: lightning current> 100KA, etc.), and the standards are often lowered to force acceptance. However, in the process of use, many technical problems that need to be improved and enhanced are exposed, and many technologies cannot meet the basic needs of mobile field lightning protection systems in direct lightning protection devices.

[0003] A solution of a direct lightning protection device in the prior art is: a smooth mushroom head shape is adopted in the lightning receiving area at the top of the device.

[0004] The disadvantages of the direct lightning protection device in the above prior art are:

[0005] A. The direct lightning protection device of the prior art usually adopts a smooth mushroom head curved surface shape in the top lightning connection area. During the atmospheric motion electric field lightning connection process, there is a lack of a central high electric field lightning connection center point. The bottom edge of the smooth mushroom head has a high electric field strength and the physical interface protrudes from the lightning connection, resulting in the protection radius of the protected area becoming an ordinary metal rod needle effect with a protection angle of 45°, which cannot meet the requirements of GJB7581-2012 (protection angle > 75°) and the current field combat lightning protection requirements (protection angle > 83°).

[0006] B. The direct lightning protection device of the prior art uses surge switch semiconductor materials, so the energy of the lightning current passing through is too small, usually <70KA, and cannot meet the requirements of GJB7581-2012 and the current requirements of field combat (>100KA).

[0007] C. The internal structure of the direct lightning protection device in the existing technology is completely encapsulated with epoxy resin, which has poor heat dissipation conditions and often causes damage such as thermal breakdown, and cannot meet the basic requirements of all-weather operations.

[0008] D. The direct lightning protection device of the prior art usually has a load charge of <3 millicoulombs, resulting in a protection angle of only <75°. The resulting protection radius is small and cannot meet the needs of field lightning protection.

[0009] E. The direct lightning protection device of the prior art does not have the function of attenuating the lightning current entering the ground, which ultimately leads to an induced overvoltage caused by the rapid current entering the ground, and at the same time causes the ground potential to rise after entering the ground, causing damage to various ports (such as power ports and signal ports) of electronic equipment in the protection area.

[0010] F. The direct lightning protection device of the existing technology has a smooth high-voltage electric field grading ring at the bottom and lacks a high-electric field flashover protection endpoint, which is prone to circumferential (side) lightning flashes, directly threatening to damage military equipment in the protection area.

[0011] G. In the prior art direct lightning protection device, the external silicone skirt umbrella usually adopts ≤5 skirt umbrellas. Since the safety distance of the skirt umbrella for preventing high-voltage creepage is limited, it cannot meet the protection needs of ponds, rivers, lakes, seasides and other areas when the relative humidity is greater than 95%, and the skirt umbrella creepage damage phenomenon is likely to occur.

[0012] H. The direct lightning protection device of the prior art has a lightning strike probability of ≤95%, and there is still a 5% probability that a direct lightning strike can completely destroy the military equipment in the protected area.

[0013] I. In the prior art direct lightning protection device, the external mushroom-shaped lightning rod is made of ordinary metal and cannot pass the salt spray test requirements in the environmental test standard of GJB151.

[0014] J. Some designs of existing direct lightning protection devices are different from military requirements (for example, metal material size, environmental salt spray corrosion, concealed coloring, etc.) Summary of the invention

[0015] The embodiments of the present invention provide a direct lightning protection device to overcome the problems of the prior art.

[0016] In order to achieve the above object, the present invention adopts the following technical scheme.

[0017] A direct lightning protection device comprises: a high-energy pressure-equalizing current dissipation shield, a current conduction positioning shaft and a high-energy double exponential function charge loading chamber;

[0018] The high-energy pressure-equalizing diffuser shield is arranged at the upper part of the device, and the lower part of the high-energy pressure-equalizing diffuser shield is rotationally connected to the current conduction positioning shaft through a spiral, and the current conduction positioning shaft is electrically connected to the semiconductor inside the high-energy double exponential function charge loading chamber;

[0019] A positioning lightning connection area is set at the center point of the highest curved surface of the high-energy pressure-equalizing diffuser shield, and a high electric field focusing lightning connection positioning end head of a cylindrical semicircular electric field is installed at the center point of the positioning lightning connection area. Each lightning connection point of the device during the lightning connection process with the atmospheric electric field occurs at the high electric field focusing lightning connection positioning end head;

[0020] The high electric field focusing lightning termination positioning terminal transmits the lightning termination current to the high energy double exponential function charge loading chamber through the current conduction positioning shaft, and the high energy double exponential function charge loading chamber attenuates the lightning termination current by using the current peak limiting function under the double exponential function current.

[0021] Preferably, the high-energy pressure-equalizing diffuser shield is hollow, with a wall thickness in the range of 0.8-3.5 mm, a top curvature radius R ≤ 120 mm and a surface area ≤ 530 cm 2 ; or top curvature radius R ≥ 270mm and surface area ≥ 750cm 2 .

[0022] Preferably, the high-energy pressure-equalizing diffuser shield and all exposed metal parts of the device are made of salt-spray resistant 316 stainless steel material, and all exposed metal parts are sandblasted for concealment purposes, with a sandblasting particle size of Ra12.5 to Ra3.2. After sandblasting, all exposed metal parts are treated with green surface coloring.

[0023] Preferably, an insulating sleeve is arranged outside the high-energy double exponential function charge loading compartment, and the outside of the insulating sleeve is wrapped with a rainproof tower group made of a high-insulation silicone rubber material, and the slope range of the tower skirt is ≥36°;

[0024] A charge loading bin capacitive ceramic semiconductor device and a charge loading bin fixing plate are arranged inside the high-energy double exponential function charge loading bin, and the lightning current is received through the charge loading bin fixing plate. The charge loading bin capacitive ceramic semiconductor device is composed of a plurality of ceramic semiconductor structures of geometric sheet bodies with the same shape connected in series, and the charge loading bin fixing plate also provides local heat dissipation to the ceramic semiconductor structures of the geometric sheet bodies.

[0025] Preferably, the series transition body of the ceramic semiconductor structure of the geometric sheet is aluminum foil or tin foil, the vertical surface of the ceramic semiconductor structure of each geometric sheet in series is attached with a charge loading chamber electrode, the side of the ceramic semiconductor structure of each geometric sheet is brushed with glass glaze insulating slurry and attached through high-temperature sintering at 300-600°, and the lightning conduction voltage of the ceramic semiconductor structure of each geometric sheet is between 500-5000V.

[0026] Preferably, the density of the ceramic semiconductor structure of the geometric plate before high-temperature sintering is: 2.5-4.0g / cm 3 After high temperature sintering, the green body has a black ceramic sheet appearance. Under a DC conduction voltage of 1.01V, the millimeter voltage is in the range of 100-450V / mm. The density range of the geometric sheet-shaped ceramic semiconductor structure obtained by the green body sintering and process treatment is: 3-4.8g / cm 3 .

[0027] Preferably, the waveform of the lightning current of the device is a double exponential function waveform, the size of the lightning current is 120-400KA, and the overall lightning conduction voltage of the device is between 8610-15000V.

[0028] Preferably, a lower electrode plate is arranged on the flange at the bottom of the device, a high electric field grading ring is arranged on the lower electrode plate, and a high electric field side flash protection terminal is arranged on the high voltage electric field grading ring.

[0029] Preferably, a heat dissipating insulating filler is encapsulated inside the high-energy double exponential function charge loading chamber.

[0030] Preferably, the charge loading chamber capacitive ceramic semiconductor device is formed and sintered before the constituent materials include: zinc oxide, bismuth oxide, antimony oxide, cobalt oxide, manganese oxide, chromium oxide, silicon oxide, aluminum hydroxide, silver nitrate, aluminum oxide, silver carbonate, boron oxide, tin oxide, copper oxide and nickel oxide;

[0031] The ceramic semiconductor of the geometric flake body appears black after sintering, and the ceramic semiconductor of the geometric flake body contains one or more elements of Zn, Bi, Sb, CO, Mn, Sn, Cr, Si, Ni, Al and AG after sintering;

[0032] The manufacturing process of the charge loading chamber capacitive ceramic semiconductor device includes batching, ball milling mixing, spray granulation, tableting, ceramic sintering, electrode attachment and side insulation treatment process.

[0033] It can be seen from the technical solution provided by the above-mentioned embodiment of the present invention that the direct lightning protection device of the embodiment of the present invention sets a positioning lightning connection area at the center point of the highest curved surface at the top, and installs a high electric field focusing lightning connection positioning terminal of a cylindrical semicircular electric field, so as to ensure that each lightning connection point occurs at the lightning connection positioning terminal during the lightning connection process with the atmospheric electric field. The lightning connection phenomenon is positioned without the occurrence of circling and side flashes. The lightning rolling effect can be guaranteed to the maximum extent, and the lightning connection flow is transmitted to the lower high-energy equalized pressure diffuser shield, highlighting the equalized pressure, equalized flow and equalized field effects, and maximizing the technical significance of functional lightning connection of the protection angle.

[0034] Additional aspects and advantages of the present invention will be given in part in the following description, which will become obvious from the following description, or may be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative work.

[0036] Figure 1 , Figure 2 and Figure 3 A structural diagram of a direct lightning protection device provided by an embodiment of the present invention;

[0037] Figure 4 A schematic structural diagram of a lightning termination and positioning terminal of a cylindrical semicircular electric field provided in an embodiment of the present invention;

[0038] Figure 5 A structural diagram of a high-energy double exponential function charge loading chamber provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0039] The embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be interpreted as limiting the present invention.

[0040] It will be understood by those skilled in the art that, unless expressly stated, the singular forms "one", "said", and "the" used herein may also include plural forms. It should be further understood that the term "comprising" used in the specification of the present invention refers to the presence of the features, integers, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof. It should be understood that when we refer to an element as being "connected" or "coupled" to another element, it may be directly connected or coupled to the other element, or there may be intermediate elements. In addition, the "connection" or "coupling" used herein may include wireless connection or coupling. The term "and / or" used herein includes any unit and all combinations of one or more associated listed items.

[0041] It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those generally understood by those skilled in the art in the art to which the present invention belongs. It should also be understood that terms such as those defined in common dictionaries should be understood to have meanings consistent with the meanings in the context of the prior art, and will not be interpreted with idealized or overly formal meanings unless defined as herein.

[0042] To facilitate understanding of the embodiments of the present invention, several specific embodiments will be further explained below with reference to the accompanying drawings, and each embodiment does not constitute a limitation on the embodiments of the present invention.

[0043] In view of the problems existing in the above-mentioned prior art, the embodiments of the present invention provide a direct lightning protection device, which can achieve high energy (lightning joule energy absorption) and large protection angle (protection range) in a small-area field combat system, so as to comprehensively reduce (maximum discharge current ≥120-300KA) and limit 80% of lightning current entering the ground, thereby reducing 80% of the lightning current entering the ground and causing lightning electromagnetic pulse induction high voltage threat to ground weapons and equipment, while increasing the probability of continuous lightning strikes to 100%, meeting the maximum discharge current ≥120-300KA.

[0044] The structure diagram of the direct lightning protection device provided by the embodiment of the present invention is as follows Figure 1 , Figure 2 and Figure 3 As shown, it includes: a high electric field focusing lightning termination positioning terminal 01, a high energy equalizing pressure dispersion shield 02, a rainproof tower skirt 03, a current conduction positioning shaft 04, a high energy double exponential function charge carrier 05, a high electric field equalizing pressure ring 06, a high electric field side flash protection terminal 07, a flange base 08, a lower electrode plate 09 and an upper electrode plate 10.

[0045] The high-energy pressure-equalizing diffuser shield is arranged at the upper part of the device, and a positioning lightning-connection area is arranged at the center point of the highest curved surface of the high-energy pressure-equalizing diffuser shield. The center point of the positioning lightning-connection area is the center point of the highest curved surface at the top of the device. A high-electric-field-focusing lightning-connection positioning terminal of a cylindrical semicircular electric field is installed at the center point of the positioning lightning-connection area, so that the center point of the highest curved surface at the top of the device becomes the highest electric field aggregation point. In the process of lightning connection with the atmospheric electric field, it is ensured that each lightning connection point occurs at the high-electric-field-focusing lightning-connection positioning terminal. The lightning connection phenomenon is positioned without the occurrence of circling and side flashes. Only after the high-electric-field-focusing lightning-connection positioning terminal of the cylindrical semicircular electric field connects with lightning, the lightning rolling effect can be guaranteed to the maximum extent, and the lightning current is transmitted to the lower high-energy pressure-equalizing diffuser shield, highlighting the pressure-equalizing, current-equalizing and field-equalizing effects, maximizing the technical significance of functional lightning connection of the protection angle, and realizing a small-area, high-energy and large-protection-angle direct lightning protection device.

[0046] The structure of a high electric field focusing lightning termination and positioning terminal of a cylindrical semicircular electric field provided by an embodiment of the present invention is shown in Figure 4. The parameters of the high electric field focusing lightning termination and positioning terminal are as follows:

[0047] a: 90-135°; semi-conical angle

[0048] h2: 7-14cm; total height of the round boss

[0049] h1: 4-8cm; height of convex cylinder

[0050] H3: 11-18cm; height of thin cylinder

[0051] M: 12-17cm; thin cylinder diameter

[0052] Q:Φ15-22cm: diameter of round boss column.

[0053] The high-energy pressure-equalizing diffuser shield in the direct lightning protection device provided in the embodiment of the present invention is made of salt-fog resistant 316 stainless steel (nickel-chromium alloy) and complies with the relevant provisions of GJB151. The high-energy pressure-equalizing diffuser shield is hollow with a wall thickness in the range of 0.8-3.5mm. The top curvature radius R≤120mm and the surface area ≤530cm 2 Or top curvature radius R ≥ 270mm and surface area ≥ 750cm 2 .

[0054] The current conduction positioning shaft is set on the upper electrode plate, and the lower part of the high-energy pressure-equalizing diffuser shield is rotatably connected to the current conduction positioning shaft through a spiral. All exposed metal parts of the high-energy pressure-equalizing diffuser shield are made of 316 stainless steel (nickel-cadmium alloy) with salt spray resistance. All exposed metal parts are sandblasted for concealment purposes, with a sandblasting particle size of Ra12.5 to Ra3.2. After sandblasting, all exposed metal parts are treated with green surface coloring to maximize the concealment characteristics of the field lightning protection device.

[0055] The current conduction positioning axis is electrically connected to the semiconductor inside the high-energy double exponential function charge loading chamber. The structural diagram of a high-energy double exponential function charge loading chamber provided by an embodiment of the present invention is as follows: Figure 5 shown. Figure 5 In the middle, 11, metal protective cover, 12 tower skirt slope ≥36°, 13 insulating sleeve, 14 charge loading bin semiconductor, 16 charge loading bin electrode, 17 charge loading bin fixing plate, 18 heat dissipation insulating filler.

[0056] An insulating sleeve is set outside the high-energy double exponential function charge loading chamber. The insulating sleeve is a characteristic epoxy material with high insulation and hardness. The outside of the insulating sleeve is wrapped with a rainproof tower group made of high-insulation silicone rubber material, and the slope range of the tower skirt is ≥36°. The metal protective cover is a protective device for the insulating sleeve, and the metal protective cover is connected to the insulating sleeve through a threaded metal connecting shaft.

[0057] The waveform of the lightning current of the direct lightning protection device of the embodiment of the present invention is a double exponential function waveform, and the magnitude of the lightning current is 150-300KA. The typical lightning current waveform defined in GB50057-2010 "Building Design Lightning Protection Code", GB50343-2012 "Technical Code for Lightning Protection of Building Electronic Information Systems", and GB21431-2015 "Technical Code for Lightning Protection Detection of Buildings" is a double exponential function waveform.

[0058] The high-energy double exponential function charge loading chamber is composed of a charge loading chamber capacitive ceramic semiconductor device, a barrier penetration tunnel effect ceramic semiconductor joint device, a charge loading chamber electrode, a charge loading chamber fixing plate, and a heat dissipation insulation filler. The high-energy double exponential function charge loading chamber completes the function of limiting the current peak of the double exponential function current, and attenuating the lightning current is the primary purpose. The charge loading chamber fixing plate is an aluminum plate, which receives the lightning current through the charge loading chamber fixing plate, and the charge loading chamber fixing plate also realizes local heat dissipation to the ceramic semiconductor structure of multiple geometric sheets.

[0059] The charge loading bin fixing plate is crimped in series with the ceramic plate for the purpose of heat dissipation, conductivity, and reducing thermal breakdown of the ceramic plate. A fixing plate is placed between every 2-6 ceramic plates. The charge loading bin fixing plate is connected to other components through a threaded metal connecting shaft.

[0060] The charge loading chamber capacitive ceramic semiconductor device inside the high-energy double exponential function charge loading chamber can be composed of 5-30 ceramic semiconductor structures of the same geometric shape in series. The series transition body is aluminum foil or tin foil to reduce the contact resistance of mechanical crimping. When the lightning current causes an overheating effect, the surface of the ceramic semiconductor structure of the geometric sheet exceeds 200-300°C, and a molten electrical connection effect is directly presented.

[0061] A conductive metal electrode (i.e., a charge loading chamber electrode) is attached to the vertical surface of each geometric sheet-shaped ceramic semiconductor structure connected in series. The material of the charge loading chamber electrode can be bismuth oxide silver paste that is melted and attached after sintering at 300-900°C, or aluminum paste that is sintered and attached after adhesive spraying, or copper that is attached by high-temperature sputtering. The side of the geometric sheet-shaped ceramic semiconductor structure is brushed with glass glaze insulating paste that is sintered and attached at a high temperature of 300-600°C. The lightning conduction voltage of each geometric sheet-shaped ceramic semiconductor structure is between 500-5000V, and the overall lightning conduction voltage of the entire direct lightning protection device is between 8610-15000V.

[0062] Basic principle: The metal oxides in the above materials are used to complete ceramic semiconductor chips under powder metallurgy and high-temperature reaction. The Zn particles with zinc oxide as the main body are grains, and other metal oxides are synthetic materials wrapped in the boundary layer outside the grains. In the absence of an external electric field, they are insulators, that is, the insulation resistance is greater than 10 to the 10th power ohms. The grains and the boundary layer are combined into a large number of tiny primary cells in an irregular arrangement state. Under the action of the set electric field high voltage (potential barrier), the primary cells undergo tunnel conduction within nS nanoseconds, that is, the primary cells are directional conduction, and the conduction resistance is less than 10 to the 6th power of 10 ohms, forming an ultra-low resistance state. The whole is a typical electric field nonlinear function. The consortium is a series and parallel combination of multiple flaky ceramic sheets, the purpose of which is to match the high electric field. After the electric field is turned on, the junction resistance inside the primary cell forms a high-probability transient power consumption with an ultra-small barrier under the action of a double exponential function current (typical oblique triangle wave pulse current), damping and limiting the peak value of the lightning current.

[0063] The direct lightning protection device of the embodiment of the present invention fills a heat dissipation insulating filler (i.e., a special silicone material with high insulation and high heat dissipation functions) in the internal high-energy double exponential function charge loading chamber to maximize the heat dissipation effect of the geometric sheet (ceramic semiconductor) when the lightning current passes through it, and comprehensively reduces the overheating and breakdown phenomenon of the entire machine caused by lightning.

[0064] In the direct lightning protection device of the embodiment of the present invention, a lower electrode plate is arranged on the flange at the bottom of the device, a high electric field grading ring is arranged on the lower electrode plate, and a high electric field bypass side flash protection terminal is arranged on the high voltage electric field grading ring. This further prevents the occurrence of lightning strikes caused by bypass and side flashes, and further improves the reliability of the direct lightning protection device.

[0065] The rainproof tower skirts in the direct lightning protection device of the embodiment of the present invention are arranged in 6-20 pieces, reducing the need for protection in areas such as ponds, rivers, lakes, and seasides when the relative humidity is greater than 95% during the thunderstorm season, and reducing creepage damage to the rainproof tower skirts caused by high-voltage and low-current lightning.

[0066] In the direct lightning protection device of the embodiment of the present invention, the main component materials of the charge loading chamber capacitive ceramic semiconductor device inside the high-energy double exponential function charge loading chamber after molding and before sintering include: zinc oxide, bismuth oxide, antimony oxide, cobalt oxide, manganese oxide, chromium oxide, silicon oxide, aluminum hydroxide, silver nitrate, aluminum oxide, silver carbonate, boron oxide, tin oxide, copper oxide and nickel oxide;

[0067] The ceramic semiconductor of the geometric flake body appears black after sintering, and the ceramic semiconductor of the geometric flake body contains one or more elements of Zn, Bi, Sb, CO, Mn, Sn, Cr, Si, Ni, Al and AG after sintering.

[0068] In the direct lightning protection device of the embodiment of the present invention, the charge loading chamber capacitive ceramic semiconductor device is manufactured through processes such as batching, ball milling, spray granulation, tableting, ceramic sintering, electrode attachment, and side insulation treatment.

[0069] In the direct lightning protection device of the embodiment of the present invention, the density of the ceramic semiconductor structure of the geometric plate before sintering is: 2.5-4.0g / cm 3 The appearance of the green body after sintering is black ceramic sheet, and the millimeter voltage (i.e., the conduction voltage per millimeter under DC1mA at both ends of the green body after sintering) is in the range of 100-450V / mm. The green body is sintered and processed, and the density of the ceramic semiconductor structure of the geometric sheet after sintering is in the range of 3-4.8g / cm 3 .

[0070] The direct lightning protection device of the embodiment of the present invention, the main component materials of the side glass glaze insulation slurry include: silicon oxide, boron oxide, aluminum oxide, lead oxide, titanium oxide, calcium oxide, magnesium oxide, barium oxide, potassium oxide, sodium oxide, etc., and the sintering temperature range is: 250-900℃.

[0071] In the direct lightning protection device of the embodiment of the present invention, bismuth oxide silver paste or aluminum paste is applied to its cross section according to the geometric sheet shape after sintering, and placed in a tunnel kiln for electrode sintering, with a sintering temperature of 300-900°C and a sintering time of 1-6 hours (i.e., a process of attaching a conductive metal electrode). The geometric sheet shape coating work can also be completed by a high-temperature copper sputtering process.

[0072] The direct lightning protection device of the embodiment of the present invention is tested by atomic absorption spectroscopy or electron microscopy. The green body after sintering (appearing as a black ceramic sheet) contains but is not limited to the following elements: bismuth, antimony, cobalt, manganese, chromium, silicon, aluminum, silver, boron, tin, copper, nickel, etc.

[0073] The amount of charge loaded in the direct lightning protection device of the embodiment of the present invention is controllable. Typical products are single-compartment type, double-compartment type and four-compartment type, and the charge loaded on the whole device can be 10-500 millicoulombs.

[0074] The direct lightning protection device of the embodiment of the present invention can achieve 80% attenuation of the lightning current (80KA) at 100KA, that is, only 20KA of lightning current is discharged to the ground. Similarly, at 120KA, 75% attenuation of the lightning current (90KA) is achieved, that is, only 30KA of lightning current is discharged to the ground. At 150KA, 75% attenuation of the lightning current (112.5KA) is achieved, that is, only 37.5KA of lightning current is discharged to the ground. At 200KA, 75% attenuation of the lightning current (150KA) is achieved, that is, only 50KA of lightning current is discharged to the ground. Tested by a third-party inspection and testing agency recognized by the state.

[0075] The direct lightning protection device of the embodiment of the present invention successfully achieves comprehensive reduction of the ground potential high-voltage counter-attack caused by lightning current, thereby improving the safety of military equipment. In particular, it protects the safety of various ports (such as power ports and signal ports) of electronic equipment in the area. (In the formula: R is the power frequency grounding resistance of the power grid, h is the height of the direct lightning protection device, l0 is the inductance coefficient of the conductor, usually 1-1.55 microhenries per meter, dt is the waveform rise time of the double exponential function lightning current, di and i are the remaining lightning currents after reduction, and U is the lightning strike counter-attack voltage (the product of lightning current and wave impedance). It is not difficult to see that reducing the lightning current is equivalent to reducing the ground potential counter-attack voltage after lightning strikes.

[0076] U=R×i+h×l0×(di / dt)

[0077] The charge loading chamber capacitive semiconductor device inside the high-energy double exponential function charge loading chamber successfully reduces the induced overvoltage caused by lightning current by more than 75-80%, improving the safety of military equipment, especially the safety of various ports (such as power ports and signal ports) of electronic equipment in the protection area.

[0078]

[0079] In the formula: A, B are the surrounding lengths of the power line or signal line, C is the distance from the down conductor of the direct lightning protection device, U is the high voltage induced by the lightning electromagnetic pulse, dt is the rising edge time of the waveform of the double exponential function lightning current, and di is the reduced lightning current. It is not difficult to see that reducing the lightning current di is equal to reducing the high voltage induced by the lightning electromagnetic pulse U, and the amount of current reduction is equal to the product multiple of how much U is reduced.

[0080] The direct lightning protection device of the embodiment of the present invention sets the center point of the highest curved surface on the top as the positioning lightning connection area, and installs a cylindrical semicircular electric field lightning connection terminal in the central lightning connection area of ​​the curved surface, thereby achieving a comprehensive reduction of the probability of continuous lightning connection by 100%, greatly improving the safety of all-weather operations of military equipment. The lightning protection device has been tested by the Beijing Lightning Protection Device Test Center, a third-party inspection and testing agency recognized by the state, and has achieved a 100% lightning connection probability.

[0081] The direct lightning protection device of the embodiment of the present invention realizes that the whole device is loaded with a charge of 10-500mC, and the protection angle meets the basic field lightning protection requirement of >85°.

[0082] The direct lightning protection device of the embodiment of the present invention can be applied to field rescue equipment.

[0083] In summary, the direct lightning protection device of the embodiment of the present invention sets a positioning lightning connection area at the center point of the highest curved surface at the top, and installs a high electric field focusing lightning connection positioning terminal of a cylindrical semicircular electric field, so as to ensure that each lightning connection point occurs at the lightning connection positioning terminal during the lightning connection process with the atmospheric electric field. The lightning connection phenomenon is located without the occurrence of circling and side flashes. After lightning connection, the high electric field focusing lightning connection positioning terminal can maximize the lightning rolling effect, and the lightning flow is transferred to the lower high-energy equalizing pressure dispersion shield, highlighting the equalizing pressure, equalizing flow and equalizing field effect, and maximizing the technical significance of functional lightning connection of the protection angle. After being tested by the Beijing Lightning Protection Device Testing Center, a national third-party testing agency, the design effect was achieved, and all of the lightning connection probability occurred at the high electric field focusing lightning connection positioning terminal. The lightning connection process is stable, and the problem of lightning connection positioning is completely solved.

[0084] The high-energy pressure-equalizing diffuser shield and all exposed metals in the direct lightning protection device of the present invention are made of salt-fog resistant 316 (nickel-chromium alloy) stainless steel. The design complies with the relevant provisions of the salt spray test standard GJB150 "Military Equipment Laboratory Environmental Test Method". The high-energy pressure-equalizing diffuser shield in the direct lightning protection device of the present invention is hollow, with a wall thickness in the range of 0.8-3.5mm and directly defines the basic parameters of 316 stainless steel.

[0085] The direct lightning protection device of the present invention defines that the use scope must have concealment characteristics, including basic requirements such as light reflection and coloring. In the direct lightning protection device of the present invention, all exposed metal parts are sandblasted for concealment purposes, and the sandblasting particle size is Ra12.5 to Ra3.2. After sandblasting, all exposed metal parts are treated with green surface coloring to maximize the concealment characteristics of the lightning protection device of the mobile field system.

[0086] The lightning current of the direct lightning protection device of the present invention is a double exponential function waveform, and the lightning current is 120-300KA. The whole machine loads a charge of 10-500mC. The problem of the probability of continuous lightning connection is fully solved, and the safety of military equipment in all-weather operations is greatly improved. After being tested by the Beijing Lightning Protection Device Test Center, a national third-party testing agency, the design effect is achieved, and the probability of lightning connection is 100%.

[0087] Those skilled in the art can understand that the accompanying drawings are only schematic diagrams of an embodiment, and the modules or processes in the accompanying drawings are not necessarily required to implement the present invention.

[0088] Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the device or system embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment. The device and system embodiments described above are merely schematic, wherein the units described as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units, that is, they may be located in one place, or they may be distributed on multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the scheme of this embodiment. Ordinary technicians in this field can understand and implement it without paying creative labor.

[0089] The above is only a preferred specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A direct lightning protection device, characterized in that: include: High-energy pressure-equalizing diffuser shield, current conduction positioning axis and high-energy double exponential function charge loading chamber; The high-energy pressure-equalizing diffuser shield is arranged at the upper part of the device, and the lower part of the high-energy pressure-equalizing diffuser shield is rotationally connected to the current conduction positioning shaft through a spiral, and the current conduction positioning shaft is electrically connected to the semiconductor inside the high-energy double exponential function charge loading chamber; A positioning lightning connection area is set at the center point of the highest curved surface of the high-energy pressure-equalizing diffuser shield, and a high electric field focusing lightning connection positioning end head of a cylindrical semicircular electric field is installed at the center point of the positioning lightning connection area. Each lightning connection point of the device during the lightning connection process with the atmospheric electric field occurs at the high electric field focusing lightning connection positioning end head; The high electric field focusing lightning termination positioning terminal transmits the lightning termination current to the high energy double exponential function charge loading chamber through the current conduction positioning shaft, and the high energy double exponential function charge loading chamber attenuates the lightning termination current by using the current peak limiting function under the double exponential function current; A lower electrode plate is arranged on the flange at the bottom of the device, a high-voltage electric field grading ring is arranged on the lower electrode plate, and a high-voltage electric field side flash protection terminal is arranged on the high-voltage electric field grading ring; A charge loading bin capacitive ceramic semiconductor device and a charge loading bin fixing plate are arranged inside the high-energy double exponential function charge loading bin, and the lightning current is received through the charge loading bin fixing plate. The charge loading bin capacitive ceramic semiconductor device is composed of a plurality of ceramic semiconductor structures of geometric sheet bodies with the same shape connected in series, and the charge loading bin fixing plate also provides local heat dissipation to the ceramic semiconductor structures of the geometric sheet bodies.

2. The device according to claim 1, characterized in that The high-energy pressure-equalizing diffuser shield is hollow, with a wall thickness ranging from 0.8 to 3.5 mm, a top curvature radius R ≤ 120 mm and a surface area ≤ 530 cm 2 ; or top curvature radius R ≥ 270mm and surface area ≥ 750cm 2 .

3. The device according to claim 2, characterized in that The high-energy pressure-equalizing diffuser shield and all exposed metal parts of the device are made of salt-spray-resistant 316 stainless steel material. All exposed metal parts are sandblasted with a sandblasting particle size of Ra12.5 to Ra3.

2. After sandblasting, all exposed metal parts are treated with green surface coloring.

4. The device according to claim 1, 2 or 3, characterized in that: An insulating sleeve is arranged outside the high-energy double exponential function charge loading chamber, and the outside of the insulating sleeve is wrapped with a rainproof tower skirt made of high-insulation silicone rubber material, and the slope range of the tower skirt surface is ≥36°.

5. The device according to claim 4, characterized in that The series transition body of the ceramic semiconductor structure of the geometric sheet is aluminum foil or tin foil, and the vertical surface of the ceramic semiconductor structure of each geometric sheet in series is attached to the charge loading chamber electrode. The side of the ceramic semiconductor structure of each geometric sheet is brushed with glass glaze insulation slurry and attached through high-temperature sintering at 300-600°C. The lightning conduction voltage of the ceramic semiconductor structure of each geometric sheet is between 500-5000V.

6. The device according to claim 5, characterized in that The density of the ceramic semiconductor structure of the geometric platelet before high-temperature sintering is: 2.5-4.0g / cm 3 After high temperature sintering, the green body has a black ceramic sheet appearance. Under a DC conduction voltage of 1.01V, the millimeter voltage is in the range of 100-450V / mm. The density range of the geometric sheet-shaped ceramic semiconductor structure obtained by the green body sintering and process treatment is: 3-4.8g / cm 3 .

7. The device according to claim 4, characterized in that The waveform of the lightning current of the device is a double exponential function waveform, the size of the lightning current is 120-400KA, and the overall lightning conduction voltage of the device is between 8610-15000V.

8. The device according to claim 4, characterized in that A heat dissipation insulating filler is encapsulated inside the high energy double exponential function charge loading bin.

9. The device according to claim 4, characterized in that The charge loading chamber capacitive ceramic semiconductor device comprises the following constituent materials after molding and before sintering: zinc oxide, bismuth oxide, antimony oxide, cobalt oxide, manganese oxide, chromium oxide, silicon oxide, aluminum hydroxide, silver nitrate, aluminum oxide, silver carbonate, boron oxide, tin oxide, copper oxide and nickel oxide; The ceramic semiconductor of the geometric flake body appears black after sintering, and the ceramic semiconductor of the geometric flake body contains one or more elements of Zn, Bi, Sb, CO, Mn, Sn, Cr, Si, Ni, Al and Ag after sintering; The manufacturing process of the charge loading chamber capacitive ceramic semiconductor device includes batching, ball milling mixing, spray granulation, tableting, ceramic sintering, electrode attachment and side insulation treatment process.

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