Method for manufacturing heterojunction solar cell and heterojunction solar cell

Abstract

The present invention relates to a method for manufacturing a heterojunction solar cell and a heterojunction solar cell. The steps of manufacturing a whole heterojunction solar cell in the manufacturing method of the present invention further include the following steps: providing a central layer; sequentially processing a plurality of top-side light-transmitting conductive layers starting from the central layer on the top side of the central layer at multiple increasing processing temperatures; and sequentially processing a plurality of bottom-side light-transmitting conductive layers starting from the central layer on the bottom side of the central layer at multiple increasing processing temperatures. According to the present invention, the plurality of light-transmitting conductive layers are processed at increasing temperatures. Such a setting will not damage the PN junction and will not affect the passivation effect of the amorphous silicon film layer on the substrate layer, thereby obtaining a low carrier recombination rate and better P-N junction performance, improving the open circuit voltage and fill factor of the battery, and further improving the conversion efficiency of the heterojunction solar cell.

Description

Technical Field

[0001] The present invention relates to the field of energy, and in particular to a method for manufacturing a heterojunction solar cell and a heterojunction solar cell. Background Art

[0002] With the accelerating global consumption of conventional fossil fuels such as coal, oil, and natural gas, the ecological environment continues to deteriorate, and greenhouse gas emissions, in particular, leading to increasingly severe global climate change, the sustainable development of human society is under serious threat. Countries around the world are formulating their own energy development strategies to address the limited availability of conventional fossil energy resources and the environmental challenges associated with their development and utilization. Solar energy, with its reliability, safety, widespread availability, longevity, environmental friendliness, and abundant resources, has become one of the most important renewable energy sources and is expected to become a major pillar of future global electricity supply.

[0003] During this new round of energy transformation, my country's photovoltaic industry has grown into a strategic emerging industry with international competitive advantages. However, the development of the photovoltaic industry still faces many problems and challenges. Conversion efficiency and reliability are the biggest technical barriers to its development, while cost control and scale-up pose economic constraints.

[0004] Currently, heterojunction solar cells are hailed as the next generation of ultra-high-efficiency solar cell technology with the greatest potential for industrialization due to their advantages, including high conversion efficiency, short manufacturing process, thin silicon wafers, low temperature coefficient, no photodegradation, bifacial power generation, and high bifaciality. Compared with traditional P-type monocrystalline / polycrystalline solar cells, heterojunction solar cells based on N-type monocrystalline substrates can achieve higher conversion efficiency and require fewer processing steps. Furthermore, heterojunction solar cells are uniquely free of PID (potential-induced degradation) and LID (light-induced degradation) effects, ensuring greater reliability and a longer service life for photovoltaic modules.

[0005] However, existing heterojunction solar cells still have some problems. The passivation layer and carrier transport layer used in existing heterojunction solar cells are made of amorphous silicon thin films, which have very poor conductivity. To conduct the emitted electricity away, a transparent conductive film must be coated on top of the amorphous silicon film. Furthermore, to increase light transmission and reduce reflection and absorption, this film must have both high light transmittance and anti-reflection properties.

[0006] Current technology uses direct current (DC) magnetron sputtering to create light-transmitting conductive films. The principle is that, under the influence of electric and magnetic fields, accelerated high-energy particles (Ar+) bombard a target material. After energy exchange, atoms on the target surface escape from their original lattice. The sputtered particles are deposited on the substrate surface and react with oxygen atoms to form an oxide film, i.e., a light-transmitting conductive film. The technology for using indium tin oxide as the material for light-transmitting conductive films is relatively mature, and indium tin oxide has a low resistivity. However, the process temperature must be 200°C. Excessively high process temperatures can damage the amorphous silicon thin film layer during the process, further impairing the performance of the PN junction and affecting the passivation effect of the amorphous silicon film on the substrate layer, thereby affecting battery performance.

[0007] Therefore, it is necessary to provide a method for manufacturing a heterojunction solar cell and a heterojunction solar cell to at least partially solve the above problems. Summary of the Invention

[0008] The object of the present invention is to provide a method for manufacturing a heterojunction solar cell and a heterojunction solar cell. In the method of the present invention, multiple light-transmitting conductive layers are processed at increasing processing temperatures. In this way, a lower temperature can be used when processing the light-transmitting conductive layer closely adjacent to the amorphous silicon film layer, while a higher temperature can be used when processing the remaining light-transmitting conductive layers. This process does not damage the PN junction and does not affect the passivation effect of the amorphous silicon film layer on the substrate layer. As a result, a low carrier recombination rate and better PN junction performance are achieved, thereby improving the open circuit voltage and fill factor of the battery, thereby improving the conversion efficiency of the heterojunction solar cell.

[0009] At the same time, since a higher temperature can be used when processing the remaining light-transmitting conductive layer, a portion of the light-transmitting conductive layer is processed at a higher temperature, thereby ensuring other properties of the entire light-transmitting conductive layer.

[0010] According to one aspect of the present invention, a method for manufacturing a heterojunction solar cell is provided, the method comprising the steps of manufacturing a whole heterojunction solar cell and splitting the whole heterojunction solar cell, wherein the step of manufacturing a whole heterojunction solar cell further comprises the following steps:

[0011] Set the center layer;

[0012] processing a plurality of top-side light-transmitting conductive layers sequentially from the center layer on the top side of the center layer at a plurality of increasing processing temperatures;

[0013] A plurality of bottom-side light-transmitting conductive layers are sequentially processed from the center layer on the bottom side of the center layer at a plurality of increasing processing temperatures.

[0014] In one embodiment, the deposition rate conditions used when processing the top-side light-transmitting conductive layers are different from each other; and the deposition rate conditions used when processing the bottom-side light-transmitting conductive layers are different from each other.

[0015] In one embodiment, the deposition rate conditions used when processing each of the top-side light-transmitting conductive layers are the same; the deposition rate conditions used when processing each of the bottom-side light-transmitting conductive layers are the same.

[0016] In one embodiment, the processing temperature used for processing the first top-side light-transmitting conductive layer and the first bottom-side light-transmitting conductive layer starting from the central layer is less than 200°C.

[0017] In one embodiment, the processing temperature used for processing the light-transmitting conductive layers except the first top-side light-transmitting conductive layer and the first bottom-side light-transmitting conductive layer is greater than or equal to 200°C.

[0018] In one embodiment, the step of processing the top-side light-transmitting conductive layer and the step of processing the bottom-side light-transmitting conductive layer can be performed simultaneously or sequentially.

[0019] In one embodiment, the steps of processing the top side light-transmitting conductive layer and processing the bottom side light-transmitting conductive layer are performed in the same processing chamber, which can be controlled to provide increasing processing temperatures.

[0020] In one embodiment, the step of processing the top light-transmitting conductive layer includes: sequentially placing the central sheet in different processing chambers capable of providing increasing processing temperatures, so as to form a layer of the top light-transmitting conductive layer in each processing chamber;

[0021] The step of processing the bottom light-transmitting conductive layer includes placing the center sheet in sequence in different processing chambers capable of providing increasing processing temperatures, so as to generate a layer of the bottom light-transmitting conductive layer in each processing chamber.

[0022] In one embodiment, the step of setting the central layer includes:

[0023] Providing an N-type single crystal silicon substrate layer;

[0024] Disposing intrinsic amorphous silicon layers on the top and bottom sides of the single crystal silicon substrate layer respectively;

[0025] Disposing an N-type amorphous silicon thin film layer on the top side of the intrinsic amorphous silicon layer located on the top side of the single crystal silicon substrate layer;

[0026] A P-type amorphous silicon thin film layer is disposed on the bottom side of the intrinsic amorphous silicon layer located on the bottom side of the single crystal silicon substrate layer.

[0027] In one embodiment, the top-side light-transmitting conductive layer and the bottom-side light-transmitting conductive layer are processed using tin-doped indium oxide, aluminum-doped zinc oxide, or fluorine-doped tin oxide.

[0028] According to another aspect of the present invention, there is provided a heterojunction solar cell manufactured by the method according to any one of the above solutions.

[0029] In one embodiment, the solar cell comprises:

[0030] N-type single crystal silicon substrate layer;

[0031] a top-side intrinsic amorphous silicon layer, wherein the top-side intrinsic amorphous silicon layer is disposed on a top side of the N-type single crystal silicon substrate layer;

[0032] a bottom intrinsic amorphous silicon layer, wherein the bottom intrinsic amorphous silicon layer is disposed on the bottom side of the N-type single crystal silicon substrate layer;

[0033] An N-type amorphous silicon thin film layer, wherein the N-type amorphous silicon thin film layer is disposed on the top side of the top-side intrinsic amorphous silicon thin film layer;

[0034] A P-type amorphous silicon thin film layer, wherein the P-type amorphous silicon thin film layer is arranged on the bottom side of the bottom intrinsic amorphous silicon thin film layer;

[0035] a plurality of top-side light-transmitting conductive layers, the plurality of top-side light-transmitting conductive layers being located on the top side of the N-type amorphous silicon thin film layer and arranged in ascending order of grain size starting from the N-type amorphous silicon thin film layer;

[0036] a plurality of bottom-side light-transmitting conductive layers, the plurality of bottom-side light-transmitting conductive layers being located on the bottom side of the P-type amorphous silicon thin film layer and arranged in ascending order of size starting from the P-type amorphous silicon thin film layer;

[0037] Electrodes are provided on a top surface of the top-side light-transmitting conductive layer and a bottom surface of the bottom-side light-transmitting conductive layer.

[0038] In one embodiment, the top-side light-transmitting conductive layer and the bottom-side light-transmitting conductive layer are both two layers.

[0039] In one embodiment, the top-side light-transmitting conductive layer close to the N-type amorphous silicon thin film layer is an integral film structure processed at a processing temperature below 200° C., and the top-side light-transmitting conductive layer away from the N-type amorphous silicon thin film layer is an integral film structure processed at a processing temperature above 200° C.

[0040] The bottom light-transmitting conductive layer close to the P-type amorphous silicon thin film layer is an integral film structure processed at a processing temperature below 200°C, and the bottom light-transmitting conductive layer away from the P-type amorphous silicon thin film layer is an integral film structure processed at a processing temperature above 200°C.

[0041] In one embodiment, the light-transmitting conductive layers are sequentially arranged on the central layer in order of increasing light transmittance in a direction from the central layer to the electrode.

[0042] According to the present invention, multiple light-transmitting conductive layers are processed at increasing processing temperatures. In this way, a lower temperature can be used when processing the light-transmitting conductive layer close to the amorphous silicon film layer, while a higher temperature can be used when processing the remaining light-transmitting conductive layers. Such a process will not damage the PN junction and will not affect the passivation effect of the amorphous silicon film layer on the substrate layer, thereby obtaining a low carrier recombination rate and better PN junction performance, improving the open circuit voltage and fill factor of the battery, and thereby improving the conversion efficiency of the heterojunction battery cell.

[0043] At the same time, since a higher temperature can be used when processing the remaining light-transmitting conductive layer, a portion of the light-transmitting conductive layer is processed at a higher temperature, thereby ensuring other properties of the entire light-transmitting conductive layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] To better understand the above and other objects, features, advantages, and functions of the present invention, reference may be made to the preferred embodiments shown in the accompanying drawings. Like reference numerals in the accompanying drawings refer to like components. Those skilled in the art should understand that the accompanying drawings are intended to illustrate preferred embodiments of the present invention by way of illustration and are not intended to limit the scope of the present invention. The components in the drawings are not drawn to scale.

[0045] Figure 1 Schematic diagram of the structure of a heterojunction solar cell according to a preferred embodiment of the present invention. DETAILED DESCRIPTION

[0046] Now referring to the accompanying drawings, the specific embodiments of the present invention will be described in detail. What is described here is only the preferred embodiment of the present invention. Those skilled in the art can think of other ways to implement the present invention based on the preferred embodiment, and the other ways also fall within the scope of the present invention.

[0047] The present invention provides a method for manufacturing a heterojunction solar cell and a heterojunction solar cell. A preferred embodiment of the present invention is provided below. The preferred embodiment includes: Figure 1 The heterojunction solar cell and the method for manufacturing the heterojunction solar cell are shown.

[0048] like Figure 1 As shown, the heterojunction solar cell includes a substrate sheet with a positive electrode printed on the top surface and a back electrode printed on the bottom surface. The positive and back electrodes are preferably made of silver. The substrate sheet further includes multiple cell layers stacked one on top of the other in a direction perpendicular to the substrate sheet. The multiple cell layers include a central layer and multiple light-transmitting conductive layers. The central layer is located at the center of all the cell layers. The light-transmitting conductive layers are stacked on the top and bottom sides of the central layer in a direction perpendicular to the central layer.

[0049] Specifically, the central layer includes multiple layers. For example, the central layer may include a substrate layer made of N-type single crystal silicon and amorphous silicon thin film layers located on the top and bottom sides of the substrate layer. The amorphous silicon thin film layer may further include an intrinsic amorphous silicon thin film layer directly in contact with the substrate layer and an N-type or P-type amorphous silicon thin film layer. In this embodiment, the N-type amorphous silicon thin film layer is located on the top side of the intrinsic amorphous silicon thin film layer located on the top side of the substrate layer, and the P-type amorphous silicon thin film layer is located on the bottom side of the intrinsic amorphous silicon thin film layer located on the bottom side of the substrate layer.

[0050] The method for manufacturing the heterojunction solar cell comprises the steps of manufacturing a whole heterojunction solar cell and splitting the whole heterojunction solar cell, wherein the step of manufacturing a whole heterojunction solar cell further comprises the following steps:

[0051] Providing a central layer, the step of providing the central layer further comprising providing an N-type single crystal silicon substrate layer, providing intrinsic amorphous silicon layers on the top and bottom sides of the single crystal silicon substrate layer, respectively, providing an N-type amorphous silicon thin film layer on the top side of the intrinsic amorphous silicon layer located on the top side of the single crystal silicon substrate layer, and providing a P-type amorphous silicon thin film layer on the bottom side of the intrinsic amorphous silicon layer located on the bottom side of the single crystal silicon substrate layer;

[0052] A plurality of top-side light-transmitting conductive layers are sequentially processed on the top side of the central layer starting from the central layer at a plurality of increasing processing temperatures. Since the light-transmitting conductive layers processed at lower processing temperatures have smaller grain sizes and the light-transmitting conductive layers processed at higher processing temperatures have larger grain sizes, the top-side light-transmitting conductive layers are arranged on the top side of the N-type amorphous silicon thin film layer in ascending order of grain size.

[0053] A plurality of bottom-side light-transmitting conductive layers are sequentially processed from the center layer on the bottom side of the center layer at increasing processing temperatures. Since the grain size of the light-transmitting conductive layer processed at a lower processing temperature is smaller and the grain size of the light-transmitting conductive layer processed at a higher processing temperature is larger, the bottom-side light-transmitting conductive layers are arranged on the bottom side of the P-type amorphous silicon thin film layer in order of grain size from small to large.

[0054] It should be noted that there is no sequential relationship between the two steps of "processing multiple top-side light-transmitting conductive layers" and "processing the bottom-side light-transmitting conductive layer" provided by the present invention. These two steps can be performed simultaneously, or the step of "processing multiple top-side light-transmitting conductive layers" can be performed first, or the step of "processing the bottom-side light-transmitting conductive layer" can be performed first.

[0055] That is, each top-side light-transmitting conductive layer located on the top side of the central layer is sequentially manufactured by increasing multiple processing temperatures, and each light-transmitting conductive layer located on the bottom side of the central layer is sequentially manufactured by increasing multiple processing temperatures.

[0056] Preferably, the first top light-transmitting conductive layer and the first bottom light-transmitting conductive layer (i.e. Figure 1 The temperature used for processing the two first light-transmitting conductive layers (shown in FIG) is less than 200°C, while the processing temperature for processing the second to Nth light-transmitting conductive layers can be greater than or equal to 200°C. This arrangement ensures that the N-type amorphous silicon thin film layer and the P-type amorphous silicon thin film layer are not damaged during the processing of the first light-transmitting conductive layer, and the PN junction is not damaged, thereby optimizing the performance of the heterojunction solar cell.

[0057] Preferably, other process conditions may be the same or different when processing each light-transmitting conductive film. For example, the deposition rate conditions used in processing the first light-transmitting conductive film to the Nth light-transmitting conductive film may be constant, or different deposition rate conditions may be used in processing the first light-transmitting conductive film to the Nth light-transmitting conductive film.

[0058] The step of processing each top-side light-transmitting conductive layer and the step of processing each bottom-side light-transmitting conductive layer can be performed simultaneously or sequentially.

[0059] For example, if they are carried out simultaneously, the first light-transmitting conductive layer located on the top side of the central layer and the light-transmitting conductive layer located on the bottom side of the central layer can be processed simultaneously at the same processing temperature, and then the second light-transmitting conductive layer located on the top side of the central layer and the second light-transmitting conductive layer located on the bottom side of the central layer can be processed simultaneously at a slightly higher temperature, and so on.

[0060] If they are performed sequentially, the first light-transmitting conductive layer located on the top side of the central layer is first processed at a relatively low temperature, and then the second light-transmitting conductive layer located on the top side of the central layer is processed at a slightly higher temperature, until the Nth light-transmitting conductive layer located on the top side of the central layer is processed, and then the light-transmitting conductive layer located on the bottom side of the central layer is processed at a relatively low temperature, and then the second light-transmitting conductive layer to the Nth light-transmitting conductive layer located on the bottom side of the central layer are processed in sequence at increasing temperatures.

[0061] On the other hand, the method can use only one processing chamber to complete the processing of all light-transmitting conductive layers, or use multiple processing chambers in sequence to complete the processing of each light-transmitting conductive layer.

[0062] Specifically, if only one processing chamber is used, the processing chamber can provide increasing processing temperatures. After the central layer is placed in the processing chamber, the processing chamber is controlled to provide increasing processing temperatures in sequence to gradually generate the first to Nth light-transmitting conductive layers.

[0063] If multiple processing chambers are used, each processing chamber can provide a different processing temperature. Then, the multiple processing chambers can be arranged from low to high according to the processing temperatures they can provide, and the solar cells in the process can be placed in each processing chamber in turn, and a light-transmitting conductive layer is generated in each processing chamber.

[0064] Preferably, in order to make the transparent conductive area of ​​the substrate sheet have a gradual light transmittance, multiple materials can be selected and matched with different production processes (including the processing temperature mentioned above) to respectively manufacture multiple transparent conductive layers, so that each transparent conductive layer has a different light transmittance. The transparent conductive layers are arranged on the top and bottom sides of the central layer in the order of light transmittance, so that in the direction from the central layer to the electrode (for example, Figure 1 As shown in FIG, the light transmittance of each light-transmitting conductive layer increases in the upward and downward directions from the central layer.

[0065] Taking the various light-transmitting conductive layers located on the top side of the central layer as an example, the light-transmitting conductive layer that is in direct contact with the central layer is referred to as the first light-transmitting conductive layer, the light-transmitting conductive layer located directly on the top side of the first light-transmitting conductive layer is referred to as the second light-transmitting conductive layer, and so on. The light-transmitting conductive layer located at the top is, for example, the Nth light-transmitting conductive layer. The positive electrode of the heterojunction solar cell is applied to the top surface of the Nth light-transmitting conductive layer. In the direction from the central layer to the positive electrode, that is, from the first light-transmitting conductive layer to the Nth light-transmitting conductive layer, the light transmittance of each light-transmitting conductive layer increases. In other words, the light transmittance of the first light-transmitting conductive layer is the worst, the light transmittance of the second light-transmitting conductive layer is stronger than the light transmittance of the first light-transmitting conductive layer, the light transmittance of the third light-transmitting conductive layer is stronger than the light transmittance of the second light-transmitting conductive layer... The light transmittance of the Nth light-transmitting conductive layer is stronger than the N-1th light-transmitting conductive layer, and the light transmittance of the Nth light-transmitting conductive layer is the strongest.

[0066] The light-transmitting conductive layer at the bottom side of the central layer is similar. Figure 1 In the downward direction from the central layer, the first light-transmitting conductive layer, the second light-transmitting conductive layer...the Nth light-transmitting conductive layer are also arranged in sequence, and the transmittance increases from the first light-transmitting conductive layer to the Nth light-transmitting conductive layer.

[0067] Of course, because the transmittance and conductivity of conductive materials are sometimes negatively correlated, the conductivity of each transparent conductive layer may decrease from the center layer to the electrode. In other words, the conductivity of the transparent conductive layers at the top and bottom of the substrate may be slightly lower.

[0068] More preferably, on the basis of the above, each light-transmitting conductive layer can be arranged so that the refractive index of each light-transmitting conductive layer gradually decreases in the direction from the central layer to the electrode. In other words, in the direction from the central layer to the electrode, the refractive index and light transmittance of each light-transmitting conductive layer are negatively correlated. For example, Figure 1 In the structure, for each light-transmitting conductive layer on the top side of the N-type amorphous silicon thin film layer, the first light-transmitting conductive layer has the highest refractive index, the second light-transmitting conductive layer has the second highest refractive index, and the Nth light-transmitting conductive layer has the lowest refractive index. This arrangement gradually focuses light as it strikes the solar cell, preventing it from escaping outward and allowing it to better penetrate the solar cell's absorption layer, thereby improving the cell's efficiency.

[0069] In the method of the present invention, multiple transparent conductive layers are processed at increasing processing temperatures. In this way, a lower temperature can be used when processing the transparent conductive layer close to the amorphous silicon film layer, while a higher temperature can be used when processing the remaining transparent conductive layers. On the one hand, such a process will not damage the PN junction and will not affect the passivation effect of the amorphous silicon film layer on the substrate layer; on the other hand, it can also ensure that a part of the transparent conductive layer is processed at a higher temperature, thereby ensuring the overall performance of the transparent conductive layer.

[0070] In the method of the present invention, multiple light-transmitting conductive layers are processed at increasing processing temperatures. In this way, a lower temperature can be used when processing the light-transmitting conductive layer close to the amorphous silicon film layer, while a higher temperature can be used when processing the remaining light-transmitting conductive layers. On the one hand, such a process will not damage the PN junction and will not affect the passivation effect of the amorphous silicon film layer on the substrate layer, thereby obtaining a low carrier recombination rate and better PN junction performance, improving the open circuit voltage and fill factor of the battery, and thus improving the conversion efficiency of the heterojunction battery cell; on the other hand, it can also ensure that a part of the light-transmitting conductive layer is processed at a higher temperature, thereby ensuring the overall performance of the light-transmitting conductive layer.

[0071] The above description of various embodiments of the present invention is provided for the purpose of description to one of ordinary skill in the relevant art. It is not intended to exclude or limit the present invention to a single disclosed embodiment. As mentioned above, a person of ordinary skill in the field of the above teachings will understand the various substitutions and variations of the present invention. Therefore, although some alternative embodiments are specifically described, a person of ordinary skill in the art will understand or relatively easily develop other embodiments. The present invention is intended to include all substitutions, modifications and variations of the present invention described herein, as well as other embodiments that fall within the spirit and scope of the present invention described above.

Claims

1. A method for manufacturing a heterojunction solar cell, characterized in that: The method includes the steps of manufacturing a whole heterojunction solar cell and splitting the whole heterojunction solar cell, wherein the step of manufacturing the whole heterojunction solar cell further includes the following steps: providing a central layer; sequentially processing a plurality of top-side light-transmitting conductive layers from the central layer on the top side of the central layer at a plurality of increasing processing temperatures, and arranging the layers in order of increasing grain size from the top side of the central layer; sequentially processing a plurality of bottom-side light-transmitting conductive layers from the central layer on the bottom side of the central layer at a plurality of increasing processing temperatures, and arranging the layers in order of increasing grain size from the bottom side of the central layer; and arranging the light-transmitting conductive layers on the central layer in order of increasing light transmittance in a direction from the central layer to the electrode; The processing temperature used for processing the first top light-transmitting conductive layer and the first bottom light-transmitting conductive layer starting from the central layer is less than 200° C.; The processing temperature used for processing the light-transmitting conductive layers except the first top-side light-transmitting conductive layer and the first bottom-side light-transmitting conductive layer is greater than or equal to 200° C.

2. The method according to claim 1, characterized in that The deposition rate conditions used when processing the top light-transmitting conductive layers are different from each other; the deposition rate conditions used when processing the bottom light-transmitting conductive layers are different from each other.

3. The method according to claim 1, characterized in that The deposition rate conditions used when processing each of the top-side light-transmitting conductive layers are the same; the deposition rate conditions used when processing each of the bottom-side light-transmitting conductive layers are the same.

4. The method according to claim 1, wherein The step of processing the top-side light-transmitting conductive layer and the step of processing the bottom-side light-transmitting conductive layer can be performed simultaneously or sequentially.

5. The method according to claim 1, wherein The steps of processing the top side light-transmitting conductive layer and processing the bottom side light-transmitting conductive layer are completed in the same processing chamber, which can be controlled to provide increasing processing temperatures.

6. The method according to claim 1, characterized in that The step of processing the top side light-transmitting conductive layer includes: placing the central layer in turn in different processing chambers that can provide increasing processing temperatures to generate a layer of the top side light-transmitting conductive layer in each processing chamber; the step of processing the bottom side light-transmitting conductive layer includes: placing the central layer in turn in different processing chambers that can provide increasing processing temperatures to generate a layer of the bottom side light-transmitting conductive layer in each processing chamber.

7. The method according to claim 1, characterized in that The steps of setting the central layer include: setting an N-type single crystal silicon substrate layer; setting an intrinsic amorphous silicon layer on the top side and the bottom side of the single crystal silicon substrate layer respectively; setting an N-type amorphous silicon thin film layer on the top side of the intrinsic amorphous silicon layer located on the top side of the single crystal silicon substrate layer; and setting a P-type amorphous silicon thin film layer on the bottom side of the intrinsic amorphous silicon layer located on the bottom side of the single crystal silicon substrate layer.

8. The method according to claim 1, characterized in that The top-side light-transmitting conductive layer and the bottom-side light-transmitting conductive layer are processed using tin-doped indium oxide, aluminum-doped zinc oxide, or fluorine-doped tin oxide.

9. A heterojunction solar cell manufactured by the method according to any one of claims 1 to 7, characterized in that: The solar cell comprises: an N-type single crystal silicon substrate layer; a top side intrinsic amorphous silicon layer, wherein the top side intrinsic amorphous silicon layer is arranged on the top side of the N-type single crystal silicon substrate layer; a bottom side intrinsic amorphous silicon layer, wherein the bottom side intrinsic amorphous silicon layer is arranged on the bottom side of the N-type single crystal silicon substrate layer; an N-type amorphous silicon thin film layer, wherein the N-type amorphous silicon thin film layer is arranged on the top side of the top side intrinsic amorphous silicon layer; a P-type amorphous silicon thin film layer, wherein the P-type amorphous silicon thin film layer is arranged on the bottom side of the bottom side intrinsic amorphous silicon layer; a plurality of top side light-transmitting conductive layers, wherein the plurality of top side light-transmitting conductive layers are located on the top side of the N-type single crystal silicon substrate layer; The top side of the N-type amorphous silicon thin film layer is arranged in order of grain size from small to large from the N-type amorphous silicon thin film layer; multiple bottom-side light-transmitting conductive layers, the multiple bottom-side light-transmitting conductive layers are located on the bottom side of the P-type amorphous silicon thin film layer and are arranged in order of grain size from small to large from the P-type amorphous silicon thin film layer; electrodes are arranged on the top surface of the top-side light-transmitting conductive layer and the bottom surface of the bottom-side light-transmitting conductive layer; each of the light-transmitting conductive layers is arranged in sequence on the central layer in order of increasing light transmittance in the direction from the central layer to the electrode.

10. The heterojunction solar cell according to claim 9, characterized in that: The top light-transmitting conductive layer and the bottom light-transmitting conductive layer are both two layers.

11. The heterojunction solar cell according to claim 9, characterized in that: The top-side light-transmitting conductive layer close to the N-type amorphous silicon thin film layer is an overall film structure processed at a processing temperature below 200°C, and the top-side light-transmitting conductive layer away from the N-type amorphous silicon thin film layer is an overall film structure processed at a processing temperature above 200°C; the bottom-side light-transmitting conductive layer close to the P-type amorphous silicon thin film layer is an overall film structure processed at a processing temperature below 200°C, and the bottom-side light-transmitting conductive layer away from the P-type amorphous silicon thin film layer is an overall film structure processed at a processing temperature above 200°C.

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