A high-speed high-voltage electronic switch and its working method

Abstract

The present invention relates to a high-speed high-voltage electronic switch and a working method thereof. The circuit comprises an isolation drive circuit, a voltage equalization circuit, and an auxiliary power supply isolation circuit. The present invention is mainly applied to the depressurization function of a high-energy laser crystal, and can ensure that the high-voltage switch will not be broken down or burned at the moment when the smaller high-voltage energy in the crystal is discharged before the next high-energy laser beam comes.

Description

Technical Field

[0001] The present invention relates to the field of circuit technology, and in particular to a high-speed high-voltage electronic switch and a working method thereof. Background Art

[0002] In the prior art, when a high-energy laser beam is irradiated on a crystal, the crystal will change the wavelength of the laser or other oscillation conditions due to electrical effects. The crystal is charged with a certain amount of energy by the crystal high-voltage circuit. In order to ensure the accuracy of the excitation when the next high-energy laser beam comes, the smaller high-voltage energy in the crystal needs to be discharged. Then one end of the crystal needs to be quickly connected to the low-potential end. Since the high voltage in the crystal is generally a DC high voltage of about 5KV, a high-voltage switch is required. In addition, in order to ensure that the high-voltage switch will not be broken down or burned at the moment of high-voltage discharge, a faster switching speed is required. Summary of the invention

[0003] To achieve the above object, the present invention provides a high-speed high-voltage electronic switch, including an isolation drive circuit, a voltage balancing circuit, and an auxiliary power supply isolation circuit;

[0004] The isolation driving circuit comprises at least one group of sub-circuits, each group of sub-circuits comprises three sub-circuits with the same structure; the structure of the sub-circuits is as follows: including a current control unit, a pulse transformer, a pulse shaping unit, and a fourth high-voltage power switch transistor; the input end of the current control unit is connected to DVCC, and the output end is connected to the primary winding of the pulse transformer; the input end of the pulse shaping unit is connected to the secondary winding of the pulse transformer, and the output end is connected to the fourth high-voltage power switch transistor; the fourth high-voltage power switch transistor is connected to the voltage balancing circuit; the input end and the output end of each sub-circuit are connected in series;

[0005] The voltage balancing circuits are arranged in a one-to-one correspondence with the isolation drive circuit sub-circuits, and are connected to the output terminals of the corresponding sub-circuits;

[0006] The output end of the auxiliary power isolation circuit is connected to the input end of the isolation drive circuit, and is used to convert the input direct current into stable direct current required for system operation.

[0007] Furthermore, the current control unit includes a thirty-first resistor, an eighth photocoupler, a twenty-eighth resistor, and a sixth diode; one end of the thirty-first resistor is connected to DVCC, and the other end is connected to the input photodiode anode of the eighth photocoupler; one end of the twenty-eighth resistor is connected to AVCC and the same-name end of the main winding of the pulse transformer.

[0008] Furthermore, the structure of the pulse shaping unit is: including a third diode, a fifth diode, a thirty-second resistor, a thirty-third resistor, a twenty-fifth resistor, a twenty-fourth resistor, and a second diode; the same-name end of the secondary winding of the pulse transformer is connected to the anode of the third diode, and the other end of the secondary winding is connected to the anode of the fifth diode; the cathode of the third diode is connected to the cathode of the fifth diode, the cathode of the second diode, and connected to one end of the twenty-fifth resistor, and the thirty-second resistor is connected in parallel with the fifth diode; the anode of the second diode is connected to one end of the twenty-fourth resistor, the other end of the twenty-fourth resistor is connected to the other end of the twenty-fifth resistor and connected to the gate of the high-voltage semiconductor power tube, and the thirty-third resistor is connected across the gate and source of the high-voltage semiconductor power tube.

[0009] Further, the level conversion circuit includes a sixth resistor, a seventh sliding rheostat, a CX1 capacitor, a tenth resistor, a third B operational amplifier, an eighth resistor, a fourth A operational amplifier, a fourth B operational amplifier, an eighteenth resistor, a fifteenth sliding rheostat, an eleventh resistor, a third resistor, a first high-frequency transformer, a first diode, a fifth capacitor, a fifth resistor, and a fourth resistor; the anode of the DX1 diode is connected to the output end of the third A operational amplifier, the cathode is connected to one end of the CX1 capacitor and one end of the tenth resistor, the other end of the CX1 capacitor is connected to AGND, the other end of the tenth resistor is connected to the inverting end of the third B operational amplifier, the in-phase end of the third B operational amplifier is connected to the sliding end of the seventh sliding rheostat, one fixed end of the seventh sliding rheostat is connected to AGND, the other fixed end is connected to one end of the sixth resistor, and the other end of the sixth resistor is connected to AVCC; the output end of the third B operational amplifier is connected to one end of the eighth resistor, the other end of the eighth resistor is connected to the in-phase end of the fourth A operational amplifier, the inverting end of the fourth A operational amplifier is connected to one end of the twelfth resistor, and the other end of the twelfth resistor is connected to The inverting terminal and output terminal of the fourth B operational amplifier, and the non-inverting terminal of the fourth B operational amplifier are connected to one end of the eighteenth resistor, a fixed end of the fifteenth sliding variable resistor, and one end of the tenth capacitor; the other end of the eighteenth resistor is connected to AVCC, the other fixed end of the fifteenth sliding variable resistor is connected to AGND, and the other end of the tenth capacitor is connected to one end of the eleventh capacitor and the collector of the second diode; the output terminal of the fourth A operational amplifier is connected to one end of the eleventh resistor, the other end of the eleventh resistor is connected to the base of the first N-type transistor, the emitter of the first N-type transistor is connected to AGND, the collector is connected to one end of the main winding of the first high-frequency transformer, the same-name end of the main winding of the first high-frequency transformer is connected to one end of the third resistor, the other end of the third resistor is connected to AVCC, the same-name end of the secondary winding of the first high-frequency transformer is connected to the anode of the first diode, the cathode of the first diode is connected to one end of the fifth capacitor and one end of the fourth resistor, and the other end of the secondary winding of the first high-frequency transformer is connected to the other end of the fifth capacitor and the source of the third high-voltage semiconductor power tube; the fifth resistor is connected in parallel to both ends of the fifth capacitor, and the other end of the fourth resistor is connected to the gate of the third high-voltage semiconductor power tube.

[0010] Furthermore, the auxiliary power isolation circuit is constructed by a 5V-LDO conversion circuit.

[0011] Furthermore, the voltage equalizing circuit is a high-voltage semiconductor power tube voltage equalizing circuit, which is connected to the output end of the isolation drive circuit; it includes a twenty-first resistor, a third high-voltage semiconductor power tube, and a thirty-seventh current sampling resistor; the connection relationship is: the drain of the third high-voltage semiconductor power tube is connected to the drain of the fourth high-voltage semiconductor power tube, the source of the third high-voltage semiconductor power tube is connected to one end of the thirty-seventh current sampling resistor, and the other end of the thirty-seventh current sampling resistor is connected to the source of the fourth high-voltage semiconductor power tube.

[0012] Furthermore, the voltage equalizing circuit includes a resistor, two ends of which are respectively connected to the drain and the gate of the fourth high-voltage semiconductor power tube.

[0013] Furthermore, it also includes a signal isolation conversion circuit, the input end of the signal isolation conversion circuit is connected to the output end of the third high-voltage semiconductor power tube voltage equalizing circuit, which includes an instrument amplifier, a series quartz crystal oscillation circuit, and a level conversion circuit connected in sequence; the input end of the instrument amplifier serves as the input end of the signal isolation conversion circuit, and the level conversion circuit serves as the output end of the signal isolation conversion circuit.

[0014] The working method of the high-speed high-voltage electronic switch comprises the following steps:

[0015] Step 1: The input end of the isolation drive circuit is powered on, and the secondary winding of the pulse transformer of each sub-circuit outputs a pulse with the same frequency as the main winding;

[0016] Step 2: The pulse shaping unit of the corresponding sub-circuit shapes the pulse, drives the corresponding fourth high-voltage semiconductor power tube, and controls the on and off of the high-voltage power by controlling the switch of the fourth high-voltage semiconductor power tube;

[0017] Step 3: collecting voltage values ​​across the thirty-seventh current sampling resistor;

[0018] Step 4: Amplify and shape the collected voltage, compare it with the sine wave generated by the series quartz crystal oscillator circuit, and generate a high-frequency square wave that can automatically stabilize the pulse width;

[0019] Step 5: The first high-frequency transformer converts the DC level into a high square wave to achieve isolated signal transmission, and reshapes it into a DC level through the first diode, the fifth capacitor, the fifth resistor, and the fourth resistor, thereby maintaining the third high-voltage semiconductor power tube in the corresponding voltage equalization function circuit working in the linear region.

[0020] The beneficial effects of the present invention are:

[0021] The present invention achieves absolute voltage balancing of the third high-voltage semiconductor power tube in each voltage balancing circuit, and multi-level isolation of the input signal and the output high voltage. In the isolation drive circuit, multiple groups can be freely connected in series to improve the withstand voltage of the high voltage, and multiple groups can be freely connected in parallel to improve the ability to flow current. It is ensured that the crystal switch will not break down or burn at the moment of high voltage discharge. The present invention can be applied not only to high-energy laser crystals, but also to voltage division detection and acquisition systems in high voltage. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 This is the connection diagram between the isolation drive circuit and the voltage equalization circuit.

[0023] Figure 2Isolation circuit for auxiliary power supply.

[0024] Figure 3 It is a signal isolation conversion circuit. DETAILED DESCRIPTION

[0025] Combine the following Figures 1 to 3 The present invention will be described.

[0026] The present invention provides a high-speed high-voltage electronic switch, comprising: an isolation drive circuit, a voltage balancing circuit, and an auxiliary power isolation circuit, which are described below respectively.

[0027] In the figure:

[0028] AVCC: High potential end of the analog power supply

[0029] AGND: Low potential terminal of analog power supply

[0030] DVCC: High potential end of the logic power supply

[0031] DGND: Low potential terminal of logic power supply

[0032] J1: External low voltage DC power supply high potential input terminal

[0033] J2: External control signal low input terminal

[0034] J3: External low voltage DC power supply low potential input terminal

[0035] J4: External high voltage DC power input terminal

[0036] J6: External high voltage DC power supply output terminal

[0037] J5: External control signal high input terminal

[0038] 1. Isolation drive circuit

[0039] The isolation driving circuit includes at least one group of sub-circuits, and each group of sub-circuits includes three sub-circuits with the same structure.

[0040] Each sub-circuit includes a pulse transformer for driving the corresponding high-voltage semiconductor power tube with pulses. The structure of the sub-circuit is: including a current control unit, a pulse transformer, a pulse shaping unit, and a fourth high-voltage power switch transistor. The input end of the current control unit is connected to the power supply, and the output end is connected to the primary winding of the pulse transformer. The input end of the pulse shaping unit is connected to the secondary winding of the pulse transformer, and the output end is connected to the fourth high-voltage power switch transistor; the fourth high-voltage power switch transistor is connected to the voltage equalization circuit; the input end and output end of each sub-circuit are connected in series.

[0041] Furthermore, the current control unit includes a thirty-first resistor, an eighth photocoupler, a twenty-eighth resistor, and a sixth diode; one end of the thirty-first resistor is connected to DVCC, and the other end is connected to the input photodiode anode of the eighth photocoupler; one end of the twenty-eighth resistor is connected to AVCC and the same-name end of the main winding of the pulse transformer.

[0042] The structure of the pulse shaping unit is: including a third diode, a fifth diode, a thirty-second resistor, a thirty-third resistor, a twenty-fifth resistor, a twenty-fourth resistor, and a second diode; the same-name end of the secondary winding of the pulse transformer is connected to the anode of the third diode, and the other end of the secondary winding is connected to the anode of the fifth diode; the cathode of the third diode is connected to the cathode of the fifth diode, the cathode of the second diode, and connected to one end of the twenty-fifth resistor, and the thirty-second resistor is connected in parallel with the fifth diode; the anode of the second diode is connected to one end of the twenty-fourth resistor, the other end of the twenty-fourth resistor is connected to the other end of the twenty-fifth resistor and connected to the gate of the fourth high-voltage semiconductor power tube, and the thirty-third resistor is connected across the gate and source of the fourth high-voltage semiconductor power tube.

[0043] like Figure 1 As shown, the names of the components of each sub-circuit may be different, but the structures are the same. For the convenience of description, the present invention uses the same name for the corresponding components of each sub-circuit, such as "the fourth high-voltage semiconductor power tube" generally refers to Figure 1 Q4, Q7, Q10; the twenty-fourth resistor refers to R24, R45, and R57.

[0044] Since simultaneous control is required, the control side of the photocoupler corresponding to each sub-circuit adopts a series control method to ensure the consistency of on and off.

[0045] Each sub-circuit is a group of 3, and multiple groups can be combined and used as needed. Multiple groups can be freely connected in series to improve the high voltage withstand voltage, or multiple groups can be freely connected in parallel to improve the ability to flow current.

[0046] 2. Voltage balancing circuit

[0047] The voltage balancing circuit is set corresponding to each sub-circuit of the isolation driving circuit, and its function is to avoid the individual differences of the high-voltage semiconductor power tubes in each sub-circuit of the isolation driving circuit in the manufacturing process and improve the reliability of control. The voltage balancing circuit can use an ordinary voltage balancing circuit as a high-voltage semiconductor power tube voltage balancing circuit. Specifically, the following can be two embodiments:

[0048] Embodiment 1:

[0049] The voltage equalizing circuit includes a twenty-first resistor, a third high-voltage semiconductor power tube, and a thirty-seventh current sampling resistor; the connection relationship is: the drain of the third high-voltage semiconductor power tube is connected to the drain of the fourth high-voltage semiconductor power tube, the source of the third high-voltage semiconductor power tube is connected to one end of the thirty-seventh current sampling resistor, and the other end of the thirty-seventh current sampling resistor is connected to the source of the fourth high-voltage semiconductor power tube.

[0050] The names of the components of the voltage balancing circuit corresponding to each sub-circuit may be different, but the structures are the same. For the convenience of description, the present invention uses the same names for the corresponding components of each voltage balancing circuit, such as "third high-voltage semiconductor power tube" generally refers to Figure 1 Q3, Q6, Q9; the thirty-seventh current sampling resistor generally refers to R37, R54, R64.

[0051] Embodiment 2:

[0052] The voltage balancing circuit comprises a resistor, two ends of which are respectively connected to the drain and the gate of the fourth high-voltage semiconductor power tube.

[0053] 3. Auxiliary power isolation circuit

[0054] Auxiliary power supply isolation circuit: This circuit can be built using a mature 5V-LDO conversion circuit, which is used to isolate the power supply of the analog part and the power supply of the logic part.

[0055] 4. Signal isolation conversion circuit

[0056] The signal isolation conversion circuit and the voltage balancing circuit are set in a one-to-one correspondence, and are used to amplify and shape the voltage value at both ends of the sampling resistor in the voltage balancing circuit, and compare it with the sine wave generated by the series quartz crystal oscillation circuit to generate a high-frequency square wave that can automatically stabilize the pulse width. The square wave is shaped into a DC level after passing through a high-frequency transformer, thereby maintaining the high-voltage semiconductor power tube in the voltage balancing circuit to work in the linear region. The linearity can be adjusted by adjusting the reference voltage, making it equivalent to a large resistor with adjustable resistance and self-stabilization. The input end of the signal isolation conversion circuit is connected to the output end of the third high-voltage semiconductor power tube voltage balancing circuit, such as Figure 3 As shown, it includes an instrument amplifier, a series quartz crystal oscillator circuit, and a level conversion circuit connected in sequence; the input end of the instrument amplifier serves as the input end of the signal isolation conversion circuit, and the level conversion circuit serves as the output end of the signal isolation conversion circuit.

[0057] The instrumentation amplifier and the series quartz crystal oscillator circuit can use existing circuits, which will not be described in detail here.

[0058] The level conversion circuit includes a sixth resistor, a seventh sliding variable resistor, a CX1 capacitor, a tenth resistor, a third B operational amplifier, an eighth resistor, a fourth A operational amplifier, an eighth resistor, a second resistor, a fourth B operational amplifier, an eighteenth resistor, a fifteenth sliding variable resistor, an eleventh resistor, a third resistor, a first high-frequency transformer, a first diode, a fifth capacitor, a fifth resistor, and a fourth resistor; an anode of the DX1 diode is connected to the output end of the third A operational amplifier, a cathode is connected to one end of the CX1 capacitor and one end of the tenth resistor, the other end of the CX1 capacitor is connected to AGND, the other end of the tenth resistor is connected to the inverting end of the third B operational amplifier, the in-phase end of the third B operational amplifier is connected to the sliding end of the seventh sliding variable resistor, a fixed end of the seventh sliding variable resistor is connected to AGND, the other fixed end is connected to one end of the sixth resistor, and the other end of the sixth resistor is connected to AVCC; the output end of the third B operational amplifier is connected to one end of the eighth resistor, the other end of the eighth resistor is connected to the in-phase end of the fourth A operational amplifier, the inverting end of the fourth A operational amplifier is connected to one end of the twelfth resistor, and the other end of the twelfth resistor is connected The inverting terminal and the output terminal of the fourth B operational amplifier are connected, the non-inverting terminal of the fourth B operational amplifier is connected to one end of the eighteenth resistor, a fixed end of the fifteenth sliding variable resistor, and one end of the tenth capacitor; the other end of the eighteenth resistor is connected to AVCC, the other fixed end of the fifteenth sliding variable resistor is connected to AGND, and the other end of the tenth capacitor is connected to one end of the eleventh capacitor and the collector of the second diode; the output end of the fourth A operational amplifier is connected to one end of the eleventh resistor, the other end of the eleventh resistor is connected to the base of the first N-type transistor, the emitter of the first N-type transistor is connected to AGND, the collector is connected to one end of the main winding of the first high-frequency transformer, the same-name end of the main winding of the first high-frequency transformer is connected to one end of the third resistor, the other end of the third resistor is connected to AVCC, the same-name end of the secondary winding of the first high-frequency transformer is connected to the anode of the first diode, the cathode of the first diode is connected to one end of the fifth capacitor and one end of the fourth resistor, the other end of the secondary winding of the first high-frequency transformer is connected to the other end of the fifth capacitor and the source of the third high-voltage semiconductor power tube; the fifth resistor is connected in parallel to both ends of the fifth capacitor, and the other end of the fourth resistor is connected to the gate of the third high-voltage semiconductor power tube.

[0059] The following is an explanation of the working steps of the high-speed high-voltage electronic switch:

[0060] Step 1: The input end of the isolation drive circuit is powered on, and the secondary winding of the pulse transformer of each sub-circuit outputs a pulse with the same frequency as the main winding;

[0061] Step 2: The pulse shaping unit of the corresponding sub-circuit shapes the pulse, drives the corresponding fourth high-voltage semiconductor power tube, and controls the on and off of the high-voltage power by controlling the switch of the fourth high-voltage semiconductor power tube;

[0062] Step 3: collecting voltage values ​​across the thirty-seventh current sampling resistor;

[0063] Step 4: Amplify and shape the collected voltage, compare it with the sine wave generated by the series quartz crystal oscillator circuit, and generate a high-frequency square wave that can automatically stabilize the pulse width;

[0064] Step 5: The first high-frequency transformer converts the DC level into a high square wave to achieve isolated signal transmission, and reshapes it into a DC level through the first diode, the fifth capacitor, the fifth resistor, and the fourth resistor, thereby maintaining the third high-voltage semiconductor power tube in the corresponding voltage equalization function circuit working in the linear region.

[0065] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A high-speed high-voltage electronic switch, comprising an isolation drive circuit, a voltage balancing circuit, and an auxiliary power supply isolation circuit; The isolation driving circuit comprises at least one group of sub-circuits, each group of sub-circuits comprises three sub-circuits of the same structure; the structure of the sub-circuits is: comprising a current control unit, a pulse transformer, a pulse shaping unit, and a fourth high-voltage power switch transistor; the input end of the current control unit is connected to DVCC, and the output end is connected to the primary winding of the pulse transformer; the input end of the pulse shaping unit is connected to the secondary winding of the pulse transformer, and the output end is connected to the fourth high-voltage power switch transistor; The fourth high-voltage power switch transistor is connected to the voltage balancing circuit; the input end and the output end of each sub-circuit are connected in series; The voltage balancing circuits are arranged in a one-to-one correspondence with the isolation drive circuit sub-circuits, and are connected to the output terminals of the corresponding sub-circuits; The auxiliary power isolation circuit is used to convert external DC power into DC power; The structure of the pulse shaping unit is: including a third diode, a fifth diode, a thirty-second resistor, a thirty-third resistor, a twenty-fifth resistor, a twenty-fourth resistor, and a second diode; The same-name end of the secondary winding of the pulse transformer is connected to the anode of the third diode, and the other end of the secondary winding is connected to the anode of the fifth diode; the cathode of the third diode is connected to the cathode of the fifth diode, the cathode of the second diode, and connected to one end of the twenty-fifth resistor, and the thirty-second resistor is connected in parallel with the fifth diode; the anode of the second diode is connected to one end of the twenty-fourth resistor, the other end of the twenty-fourth resistor is connected to the other end of the twenty-fifth resistor and connected to the gate of the high-voltage semiconductor power tube, and the thirty-third resistor is connected across the gate and source of the high-voltage semiconductor power tube; the level conversion circuit includes a sixth resistor, a seventh sliding rheostat, a CX1 capacitor, a tenth resistor, a third B operational amplifier, an eighth resistor, a fourth A operational amplifier, a fourth B operational amplifier, an eighteenth resistor, a fifteenth sliding rheostat, an eleventh resistor, a third resistor, a first high-frequency transformer, a first diode, a fifth capacitor, a fifth resistor, and a fourth resistor; the anode of the DX1 diode is connected to the third A operational amplifier The output end of the device, the cathode is connected to one end of the CX1 capacitor and one end of the tenth resistor, the other end of the CX1 capacitor is connected to AGND, the other end of the tenth resistor is connected to the inverting end of the third B operational amplifier, the non-inverting end of the third B operational amplifier is connected to the sliding end of the seventh sliding variable resistor, one fixed end of the seventh sliding variable resistor is connected to AGND, the other fixed end is connected to one end of the sixth resistor, and the other end of the sixth resistor is connected to AVCC; the output end of the third B operational amplifier is connected to one end of the eighth resistor, the other end of the eighth resistor is connected to the non-inverting end of the fourth A operational amplifier, the inverting end of the fourth A operational amplifier is connected to one end of the twelfth resistor, the other end of the twelfth resistor is connected to the inverting end and the output end of the fourth B operational amplifier, the non-inverting end of the fourth B operational amplifier is connected to one end of the eighteenth resistor and a fixed end of the fifteenth sliding variable resistor and one end of the tenth capacitor, the other end of the eighteenth resistor is connected to AVCC, and the other fixed end of the fifteenth sliding variable resistor is connected to AG ND, the other end of the tenth capacitor is connected to one end of the eleventh capacitor and the collector of the second diode; the output end of the fourth A operational amplifier is connected to one end of the eleventh resistor, the other end of the eleventh resistor is connected to the base of the first N-type transistor, the emitter of the first N-type transistor is connected to AG ND, the collector is connected to one end of the main winding of the first high-frequency transformer, the same-name end of the main winding of the first high-frequency transformer is connected to one end of the third resistor, the other end of the third resistor is connected to AVCC, the same-name end of the secondary winding of the first high-frequency transformer is connected to the anode of the first diode, the cathode of the first diode is connected to one end of the fifth capacitor and one end of the fourth resistor, the other end of the secondary winding of the first high-frequency transformer is connected to the other end of the fifth capacitor and the source of the third high-voltage semiconductor power tube; The fifth resistor is connected in parallel at both ends of the fifth capacitor, and the other end of the fourth resistor is connected to the gate of the third high-voltage semiconductor power tube; it also includes a signal isolation conversion circuit, which is arranged in a one-to-one correspondence with the voltage equalization circuit, and the input end is connected to the output end of the third high-voltage semiconductor power tube voltage equalization circuit, which includes an instrument amplifier, a series quartz crystal oscillation circuit, and a level conversion circuit connected in sequence; the input end of the instrument amplifier serves as the input end of the signal isolation conversion circuit, and the level conversion circuit serves as the output end of the signal isolation conversion circuit.

2. The high-speed high-voltage electronic switch according to claim 1, characterized in that: The current control unit includes a thirty-first resistor, an eighth photocoupler, a twenty-eighth resistor, and a sixth diode; one end of the thirty-first resistor is connected to DVCC, and the other end is connected to the input photodiode anode of the eighth photocoupler; one end of the twenty-eighth resistor is connected to AVCC and the same-name end of the main winding of the pulse transformer.

3. The high-speed high-voltage electronic switch according to claim 1 is characterized in that: The auxiliary power isolation circuit is built with a 5V-LDO conversion circuit.

4. The high-speed high-voltage electronic switch according to any one of claims 1 to 3, characterized in that: The voltage balancing circuit is arranged corresponding to each sub-circuit of the isolation driving circuit, and the output ends of the other corresponding sub-circuits are connected; it includes a twenty-first resistor, a third high-voltage semiconductor power tube, and a thirty-seventh current sampling resistor; the connection relationship is: the drain of the third high-voltage semiconductor power tube is connected to the drain of the fourth high-voltage semiconductor power tube, the source of the third high-voltage semiconductor power tube is connected to one end of the thirty-seventh current sampling resistor, and the other end of the thirty-seventh current sampling resistor is connected to the source of the fourth high-voltage semiconductor power tube.

5. The high-speed high-voltage electronic switch according to any one of claims 1 to 3, characterized in that: The voltage balancing circuit is arranged corresponding to each sub-circuit of the isolation driving circuit, and the output ends of the other corresponding sub-circuits are connected; the voltage balancing circuit includes a resistor, and its two ends are respectively connected to the drain and the gate of the fourth high-voltage semiconductor power tube.

6. The operating method of the high-speed high-voltage electronic switch according to claim 1, characterized in that: The steps include: Step 1: The input end of the isolation drive circuit is powered on, and the secondary winding of the pulse transformer of each sub-circuit outputs a pulse with the same frequency as the main winding; Step 2: The pulse shaping unit of the corresponding sub-circuit shapes the pulse, drives the corresponding fourth high-voltage semiconductor power tube, and controls the on and off of the high-voltage power by controlling the switch of the fourth high-voltage semiconductor power tube; Step 3: collecting voltage values ​​across the thirty-seventh current sampling resistor; Step 4: Amplify and shape the collected voltage, compare it with the sine wave generated by the series quartz crystal oscillator circuit, and generate a high-frequency square wave that can automatically stabilize the pulse width; Step 5: The first high-frequency transformer converts the DC level into a high square wave to achieve isolated signal transmission, and reshapes it into a DC level through the first diode, the fifth capacitor, the fifth resistor, and the fourth resistor, thereby maintaining the third high-voltage semiconductor power tube in the corresponding voltage equalization function circuit working in the linear region.

Images