Detection device

Abstract

A detection device comprises: a plurality of detection electrodes; a detection circuit connected to the detection electrodes and detecting a detection signal corresponding to a change in the capacitance of the detection electrodes; and a connection circuit connecting or disconnecting the detection electrodes and the detection circuit, wherein the detection device has a plurality of selection forms for the detection electrodes, wherein the selection form causes a detection electrode of a first selection object among the plurality of detection electrodes to be in a connected state connected to the detection circuit, and causes a detection electrode of a second selection object not included in the detection electrode of the first selection object to be in a disconnected state not connected to the detection circuit, and the plurality of selection forms do not include a selection form that causes the detection electrode of the first selection object to be in a disconnected state and causes the detection electrode of the second selection object to be in a connected state.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] The entire contents of Japanese Patent Application No. 2018-226099, filed on November 30, 2018, are incorporated herein by reference. The present application claims the benefit of priority of the original application. Technical Field

[0003] The invention relates to a detection device. Background Art

[0004] In a detection device capable of detecting an external approaching object based on a change in capacitance, as a method of improving accuracy by switching various combinations of detection electrodes used for detection and detection electrodes not used for detection among a plurality of detection electrodes, a method described in Japanese Patent Gazette No. 2017-188106 is known.

[0005] The premise of the method described in Japanese Patent Publication No. 2017-188106 is that in one detection, the signal is integrated in the form of two combinations in which the positional relationship between the detection electrodes used for detection and the detection electrodes not used for detection among multiple detection electrodes is opposite to each other. In this method, various burdens corresponding to the detection accuracy increase, for example, the increase in the number of combinations leads to an extension of the detection time at one time, an increase in the amount of data used for detection, and an increase in the required data processing capacity. Therefore, a detection device that can reduce the burden and improve the accuracy at the same time is needed.

[0006] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a detection device capable of reducing the burden and improving the accuracy at the same time. Summary of the invention

[0007] According to one aspect of the present invention, a detection device comprises: a plurality of detection electrodes; a detection circuit connected to the detection electrodes and detecting a detection signal corresponding to a change in the capacitance of the detection electrodes; and a connection circuit connecting or disconnecting the detection electrodes and the detection circuit, wherein the detection device has a plurality of selection forms of the detection electrodes, the selection form causing a detection electrode of a first selection object among the plurality of detection electrodes to be in a connected state connected to the detection circuit, and causing a detection electrode of a second selection object not included in the first selection object to be in a disconnected state not connected to the detection circuit, and the plurality of selection forms do not include a selection form causing the detection electrode of the first selection object to be in the disconnected state, and causing the detection electrode of the second selection object to be in the connected state. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 is a block diagram showing an example of the configuration of a detection device in Embodiment 1;

[0009] Figure 2 A schematic diagram showing an example of the structure of a detection device;

[0010] Figure 3 A schematic diagram showing an example of the configuration of a sensor unit included in a detection device;

[0011] Figure 4 A diagram schematically showing a situation where a driving signal is transmitted from a driving electrode to a detecting electrode via a finger;

[0012] Figure 5 An explanatory diagram showing an example of an equivalent circuit for explaining the detection operation of the sensor unit and the detection circuit;

[0013] Figure 6 A diagram showing an example of waveforms of a drive signal and a detection signal in a detection operation;

[0014] Figure 7 A cross-sectional view showing an example of the structure of a substrate of a detection device;

[0015] Figure 8 A plan view showing an example of the structure of a detection device;

[0016] Fig. 9 A diagram showing a selection form of detection electrodes driven by code selection;

[0017] Fig.10 is a timing waveform diagram showing an operation example of the detection device in Embodiment 1;

[0018] Fig.11A (A), (B), (C), and (D) are diagrams showing the selection form of detection electrodes for a plurality of detection electrode blocks using positive code selection driving;

[0019] Fig. 11B (E), (F), and (G) are diagrams showing the selection form of detection electrodes driven by positive code selection for a plurality of detection electrode blocks;

[0020] Fig.12 1 is a diagram showing a driving waveform corresponding to Modification 1 of Embodiment 1;

[0021] Fig.13 is a diagram showing a driving waveform of a detection device in Embodiment 2;

[0022] Fig.14A (A), (B), (C), and (D) are diagrams showing the selection form of the detection electrodes driven by the negative code selection for a plurality of detection electrode blocks;

[0023] Fig. 14B(E), (F), (G), and (H) are diagrams showing the selection form of the detection electrodes driven by the negative code selection for a plurality of detection electrode blocks;

[0024] Fig.15 2 is a diagram showing a driving waveform corresponding to Modification 1 of Embodiment 2;

[0025] Fig.16 2 is a diagram showing a driving waveform corresponding to a second variation of the second embodiment;

[0026] Fig.17A An explanatory diagram for explaining an example of the selection form of the second selection circuit in a state where the first selection circuit selects the detection electrode in the first selection form in the fourth embodiment;

[0027] Fig. 17B An explanatory diagram for explaining an example of the selection form of the second selection circuit in a state where the first selection circuit selects the detection electrode in the first selection form in the fourth embodiment;

[0028] Fig.18A An explanatory diagram for explaining an example of the selection form of the second selection circuit in a state where the first selection circuit selects the detection electrode in the second selection form in the fourth embodiment;

[0029] Fig.18B An explanatory diagram for explaining an example of the selection form of the second selection circuit in a state where the first selection circuit selects the detection electrode in the second selection form in the fourth embodiment;

[0030] Fig.19A An explanatory diagram for explaining an example of the selection form of the second selection circuit in a state where the first selection circuit selects the detection electrode in the third selection form in the fourth embodiment;

[0031] Fig.19B An explanatory diagram for explaining an example of the selection form of the second selection circuit in a state where the first selection circuit selects the detection electrode in the third selection form in the fourth embodiment;

[0032] Fig. 20A An explanatory diagram for explaining an example of the selection form of the second selection circuit in a state where the first selection circuit selects the detection electrode in the fourth selection form in the fourth embodiment;

[0033] Fig. 20B An explanatory diagram for explaining an example of the selection form of the second selection circuit in a state where the first selection circuit selects the detection electrode in the fourth selection form in the fourth embodiment;

[0034] Fig.21A diagram showing an example of the configuration of a detection device in Embodiment 5;

[0035] Fig. 22 A diagram showing an example of the configuration of a detection device in Embodiment 6;

[0036] Fig.23 is a plan view showing a detection device in Embodiment 7;

[0037] Fig.24 This is a cross-sectional view of the detection device in embodiment 7. DETAILED DESCRIPTION

[0038] With reference to the accompanying drawings, the mode (implementation mode) for implementing the present invention is described in detail. The present invention is not limited to the contents described in the following implementation modes. In addition, the components described below include components that are easily thought of by those skilled in the art, and components that are substantially the same. Moreover, the components described below can be appropriately combined. It should be noted that the disclosure is only an example, and appropriate changes that can be easily thought of by those skilled in the art and do not deviate from the main purpose of the invention are of course also included in the scope of the present invention. In addition, in order to explain more clearly, the width, thickness, shape, etc. of each part are sometimes schematically indicated in the accompanying drawings compared to the actual scheme, but these are only examples and do not limit the interpretation of the present invention. In addition, in this specification and each figure, the same parts as the parts described in the figures that have already been mentioned have the same code, and detailed descriptions are sometimes appropriately omitted.

[0039] (Implementation Method 1)

[0040] Figure 1 It is a block diagram showing a configuration example of the detection device in the first embodiment. Figure 2 It is a schematic diagram showing an example of the structure of a detection device. Figure 3 1 is a schematic diagram showing an example of the structure of the sensor unit of the detection device. The detection device 100 of this embodiment is a detection device for detecting fine concavities and convexities and detecting the capacitance between electrodes, for example, a fingerprint detection device. Figure 1 As shown, the detection device 100 includes a sensor unit 1 , a detection control circuit 11 , a first selection circuit 14 , a second selection circuit 15 , and a detection circuit 40 .

[0041] like Figure 2 and Figure 3As shown, the sensor unit 1 includes an insulating substrate 101, a plurality of detection electrodes Rx provided on one surface 101a of the substrate 101, a plurality of switching elements SW1, a scanning line GCL connected to the switching element SW1, a data line SGL connected to the switching element SW1, and a detection electrode Tx (driving electrode). The switching element SW1 is, for example, a thin film transistor. The scanning line GCL is a wiring for providing a scanning signal to the switching element SW1. For example, when the switching element SW1 is a transistor, the scanning line GCL is connected to the gate of the transistor. The data line SGL is a wiring electrically connected to the detection electrode Rx according to the scanning signal from the scanning line GCL. In other words, the data line SGL is a wiring to which the detection signal Sv is input from the detection electrode Rx. For example, when the switching element SW1 is a transistor, the data line SGL is connected to the source of the transistor. The substrate 101 is made of, for example, glass. As Figure 2 As shown, the sensor unit 1 further includes a shield layer 24 between the detection electrode Rx and the switch element SW1 . In other words, the switch element SW1 , the scanning line GCL, and the data line SGL are provided between the one surface 101 a of the substrate 101 and the shield layer 24 .

[0042] The first selection circuit 14 and the second selection circuit 15 are respectively provided on one surface 101a side of the substrate 101. The data line SGL is connected to the second selection circuit 15. The scanning line GCL is connected to the first selection circuit 14. The shielding layer 24 is connected to a fixed potential (for example, a ground potential). Thus, the potential of the detection electrode Rx is suppressed from affecting the data line SGL and the like to form noise. It should be noted that the shielding layer 24 can be made into a floating state in which the potential is not fixed.

[0043] like Figure 3As shown, the sensor unit 1 has a detection area DA and a peripheral area PA other than the detection area DA. The detection area DA is, for example, a quadrilateral shape. The detection electrode Rx and the switch element SW1 are arranged in the detection area DA. When the detection area DA is a quadrilateral shape, the peripheral area PA of the sensor unit 1 is formed along at least one side of the detection area DA. The detection electrode Tx (driving electrode) is arranged in the peripheral area PA of the sensor unit 1. The sensor unit 1 further has a conductor 26. The conductor 26 is arranged in the peripheral area PA. More specifically, the conductor 26 is arranged between the detection electrode Rx and the detection electrode Tx. The conductor 26 is connected to the detection circuit 40. The conductor 26 is an electrode for detecting that an external object (for example, a finger Fin) is approaching the sensor unit 1. For example, the conductor 26 is connected to the clock signal generating circuit 110, and the driving signal Vs is provided to the conductor 26. In addition, if the finger Fin approaches the conductor 26, a capacitance is generated between the conductor 26 and the finger Fin, and the capacitance value of the conductor 26 increases. The proximity of an external object (e.g., a finger Fin) to the sensor unit 1 can be detected by detecting a change in the capacitance value of the conductor 26 using the detection circuit 40 connected to the conductor 26. It should be noted that before the detection circuit 40 senses the proximity of the finger Fin through the conductor 26, the detection circuit 40 may stop the detection control circuit 11 from providing the drive signal Vs to the detection electrode Tx and the detection circuit 40 from receiving the detection signal Sv from the detection electrode Rx, and when the proximity of the finger Fin is sensed through the conductor 26, the detection control circuit 11 and the detection circuit 40 may start operating the detection electrode Tx and the detection electrode Rx. Here, the mode of operating only the conductor 26 is set as the standby mode.

[0044] A driving signal Vs is provided to the detection electrode Tx. The detection electrode Tx is arranged outside the detection area DA where the detection electrode Rx is arranged. More specifically, the detection electrode Tx is arranged closer to the outside than the conductor 26. That is, the conductor 26 is arranged between the detection electrode Rx and the detection electrode Tx. The detection electrode Rx, the conductor 26, and the detection electrode Tx are arranged at intervals from each other.

[0045] The detection control circuit 11 controls various operations of the sensor unit 1, the first selection circuit 14, the second selection circuit 15, and the detection circuit 40. In addition, the detection control circuit 11 provides the detection electrode Tx with a drive signal Vs for detection. The first selection circuit 14 provides a scanning signal to the selected scanning line GCL based on the selection signal Vgcl provided by the detection control circuit 11. In other words, the first selection circuit 14 is connected to the scanning line GCL and is used to select a plurality of detection electrodes Rx (see the following description) connected in the row direction (X direction). Fig.12). The first selection circuit 14 is a gate driver, for example, a decoder. The second selection circuit 15 connects the selected data line SGL to the detection circuit 40 based on the selection signal Vsel provided by the detection control circuit 11. In other words, the second selection circuit 15 is a selection circuit for selecting the detection electrode Rx in the column direction (Y direction) connected to the data line SGL. The second selection circuit 15 is, for example, a multiplexer.

[0046] For example, Figure 3 As shown, the sensor unit 1 has detection electrodes Rx, scanning lines GCL(k), GCL(k+1)..., and data lines SGL(l), SGL(l+1)... K and l are integers greater than 1. The detection electrodes Rx are arranged in parallel along the row direction (X direction) and the column direction (Y direction). The scanning lines GCL(k), GCL(k+1)... are wirings for turning the switch element SW1 on or off. The scanning lines GCL(k), GCL(k+1)... are arranged in parallel along the column direction (Y direction) and extend along the row direction (X direction). The data lines SGL(l), SGL(l+1)... are wirings for outputting the detection signal Sv. The data lines SGL(l), SGL(l+1)... are arranged in parallel along the row direction (X direction) and extend along the column direction (Y direction). It should be noted that in the following description, when there is no need to distinguish the scanning lines GCL(k), GCL(k+1)..., they are simply referred to as scanning lines GCL. In addition, when there is no need to distinguish between the data lines SGL(1), SGL(1+1), . . . , they are simply referred to as data lines SGL.

[0047] The first selection circuit 14 selects a predetermined scanning line GCL (for example, GCL(k), GCL(k+2)) from a plurality of scanning lines GCL based on the selection signal Vgcl provided by the detection control circuit 11. And, the first selection circuit 14 applies a predetermined voltage (scanning signal) to the selected scanning lines GCL(k), GCL(k+2). Thus, the detection electrode Rx belonging to the kth row and the detection electrode Rx belonging to the (k+2)th row are connected to the second selection circuit 15 via the data lines SGL(l), SGL(l+1)... The second selection circuit 15 selects a predetermined data line SGL (for example, SGL(l)) from a plurality of data lines SGL based on the signal provided by the detection control circuit 11. And, the second selection circuit 15 connects the selected data line SGL(l) to the detection circuit 40. Thus, the detection signal Sv is provided to the detection circuit 40 from the detection electrode Rx of the kth row and the lth column and the detection electrode Rx of the (k+2)th row and the lth column.

[0048] The detection circuit 40 is a circuit that detects the unevenness of the surface of the finger Fin or the like that touches or approaches the sensor unit 1 based on the detection signal Sv output from the second selection circuit 15 according to the signal provided by the detection control circuit 11, thereby detecting the shape of the finger Fin or the fingerprint. The detection circuit 40 includes a detection signal amplifying circuit 42, an A / D conversion circuit 43, a signal operation circuit 44, a coordinate extraction circuit 45, a synthesis circuit 46, a detection timing control circuit 47, and a storage circuit 48. The detection timing control circuit 47 controls the detection signal amplifying circuit 42, the A / D conversion circuit 43, the signal operation circuit 44, the coordinate extraction circuit 45, and the synthesis circuit 46 to operate synchronously based on the clock signal provided by the detection control circuit 11.

[0049] The detection signal Sv is supplied from the sensor unit 1 to the detection signal amplifier circuit 42 of the detection circuit 40. The detection signal amplifier circuit 42 amplifies the detection signal Sv. The A / D conversion circuit 43 converts the analog signal output from the detection signal amplifier circuit 42 into a digital signal.

[0050] The signal operation circuit 44 is a logic circuit that detects the concavity and convexity of the finger Fin relative to the sensor unit 1 based on the output signal of the A / D conversion circuit 43. The signal operation circuit 44 calculates a signal (absolute value |ΔV|) of the difference of the detection signal Sv generated by the concavity and convexity of the finger Fin based on the detection signal Sv output from the sensor unit 1. The signal operation circuit 44 compares the absolute value |ΔV| with a predetermined threshold voltage, and if the absolute value |ΔV| is lower than the threshold voltage (second threshold Vth2), it is determined that the concavity of the finger Fin is detected. On the other hand, if the absolute value |ΔV| is higher than the threshold voltage, the signal operation circuit 44 determines that the convexity of the finger Fin is detected. In this way, the detection circuit 40 can detect the concavity and convexity of the finger Fin. It should be noted that when the signal via the conductor 26 is input to the detection circuit 40, the absolute value |ΔV| is also compared with the predetermined threshold voltage, and if the absolute value |ΔV| is lower than the threshold voltage (first threshold Vth1), it is determined that the finger Fin is in a non-contact state. On the other hand, if the absolute value |ΔV| is equal to or greater than the threshold voltage, the signal operation circuit 44 determines that the finger Fin is in contact.

[0051] In addition, as described below, the signal operation circuit 44 receives the detection signal Sv from the detection electrode block RxB and performs operation processing based on a predetermined code. The calculated detection signal Sv is temporarily stored in the storage circuit 48. Moreover, the signal operation circuit 44 receives the detection signal Sv stored in the storage circuit 48 and performs decoding processing based on a predetermined code. The predetermined code is pre-stored in, for example, the storage circuit 48. The detection control circuit 11 and the signal operation circuit 44 can read the predetermined code stored in the storage circuit 48 according to an arbitrary timing. The storage circuit 48 can be any one of, for example, a RAM (Random Access Memory), a ROM (Read Only Memory), a register circuit, etc.

[0052] The coordinate extraction circuit 45 is a logic circuit that finds the detection coordinates of the finger Fin when the concave and convex of the finger Fin is detected in the signal operation circuit 44. The coordinate extraction circuit 45 calculates the detection coordinates based on the decoded detection signal Sid, and outputs the obtained detection coordinates to the synthesis circuit 46. The synthesis circuit 46 combines the detection coordinates output from the coordinate extraction circuit 45 to generate two-dimensional information representing the shape and fingerprint of the finger Fin that is in contact or approaching. The synthesis circuit 46 outputs the two-dimensional information as the output signal Vout of the detection circuit 40. In addition, the synthesis circuit 46 can also generate an image based on the two-dimensional information and output the image information as the output signal Vout. It should be noted that at least one of the coordinate extraction circuit 45 and the synthesis circuit 46 can be configured in an external device connected to the detection device 100. In other words, the detection signal Sid decoded by the signal operation circuit 44 can be output as the output signal Vout. It should be noted that the detection device 100 is not limited to detecting the finger Fin, but can also detect the approach of an object that affects the capacitance of the detection electrode Rx.

[0053] In addition, if Figure 1 As shown, the detection control circuit 11 includes a clock signal generating circuit 110 , a drive signal generating circuit 112 , and a counter circuit 116 . The counter circuit 116 includes a first control circuit 114 and a second control circuit 115 .

[0054] The clock signal generation circuit 110 generates a clock signal. The clock signal is supplied to, for example, the counter circuit 116 of the detection control circuit 11 and the detection timing control circuit 47 of the detection circuit 40.

[0055] The counter circuit 116 measures the number of pulses of the clock signal generated by the clock signal generating circuit 110. The counter circuit 116 generates a first timing control signal for controlling the timing of selecting the scanning line GCL based on the measured value of the number of pulses, and provides it to the first control circuit 114. In addition, the first control circuit 114 generates a timing control signal for selecting the detection electrode Rx (see Figure 3 ) of the selection signal Vgcl (for example, Fig.12 The first selection circuit 114 receives the selection signal Vgclp and the selection signal Vgclm shown in the figure and provides them to the first selection circuit 14. The first selection circuit 14 provides a scanning signal to the scanning line GCL based on the selection signal Vgcl provided by the first control circuit 114. Thus, a predetermined scanning line GCL is selected from a plurality of scanning lines GCL. The detection electrode Rx connected to the selected scanning line GCL is connected to the data line SGL.

[0056] In addition, the counter circuit 116 generates a second timing control signal for controlling the timing of selecting the data line SGL based on the measured value of the number of pulses of the above-mentioned clock signal. And, the counter circuit 116 provides the generated second timing control signal to the second control circuit 115. The second control circuit 115 outputs a selection signal Vsel to the second selection circuit 15 based on the second timing control signal provided by the counter circuit 116. Here, the selection signal Vsel is a signal for scanning the switch in the second selection circuit 15. Thus, a predetermined data line SGL is selected from a plurality of data lines SGL. The selected data line SGL is connected to the detection circuit 40 via the second selection circuit 15.

[0057] The driving signal generation circuit 112 generates a driving signal Vs for detection and outputs it to the detection electrode Tx.

[0058] Figure 1 to Figure 3 The sensor unit 1 shown detects the change in capacitance of the detection electrode Rx. Figures 4 to 6 , the detection operation of the sensor unit 1 is described. Figure 4 The diagram schematically shows how a driving signal is transmitted from a driving electrode to a detecting electrode via a finger Fin. Figure 5 This is an explanatory diagram showing an example of an equivalent circuit for explaining the detection operation of the sensor unit and the detection circuit. Figure 6 A diagram showing an example of waveforms of a drive signal and a detection signal in a detection operation.

[0059] like Figure 4 As shown in FIG. 1 , a capacitive element C1 is formed between the detection electrode Tx and the detection electrode Rx. Figure 5As shown, the detection electrode Tx is connected to the AC signal source S. In other words, the detection control circuit 11 provides the drive signal Vs to the detection electrode Tx. The detection electrode Rx is connected to the voltage detection circuit DET. The voltage detection circuit DET corresponds to, for example, the detection signal amplification circuit 42 of the detection circuit 40. The voltage detection circuit DET is an integration circuit.

[0060] The driving signal Vs applied to the detection electrode Tx is, for example, an AC rectangular wave of a predetermined frequency (eg, several kHz to several hundred kHz). When the driving signal Vs is applied to the detection electrode Tx, the detection signal Sv is output from the detection electrode Rx via the voltage detection circuit DET.

[0061] When the finger Fin is not in contact or close to the capacitor C1 (non-contact state), a current corresponding to the capacitance value of the capacitor C1 flows along with the charging and discharging of the capacitor C1. The detection circuit 40 converts the change of the current I1 corresponding to the drive signal Vs into a change of voltage (the dotted waveform V1 (see Figure 6 )).

[0062] On the other hand, in a state where the finger Fin is in contact or close to the touch screen (contact state), Figure 4 As shown, the finger Fin contacts the detection electrode Tx. And, the drive signal Vs provided to the detection electrode Tx by the detection control circuit 11 affects the detection electrode Rx via the finger Fin and the insulating protective layer 33 (for example, insulating resin) that protects the sensor unit 1. That is, the finger Fin functions as a part of the detection electrode Tx. Therefore, in the contact state, the separation distance between the detection electrode Tx and the detection electrode Rx is substantially reduced, and the capacitor C1 functions as a capacitor having a capacitance value greater than that in the non-contact state. Moreover, there is a difference in the spacing distance between the concave and convex parts of the finger Fin and the detection electrode Rx, and the capacitance value generated by the capacitor C1 at the convex part of the finger Fin is greater than the capacitance value generated at the concave part of the finger Fin. And, as Figure 6 As shown, the detection circuit 40 converts the change of the current I2 or I3 corresponding to the drive signal Vs into a change of the voltage (solid line waveform V2 or waveform V3). Here, the waveform V2 corresponds to the waveform of the state where the concave part of the finger Fin is in contact, and the waveform V3 corresponds to the waveform of the state where the convex part of the finger Fin is in contact.

[0063] At this time, the amplitudes of waveforms V2 and V3 are larger than those of the above-mentioned waveform V1. In addition, the amplitude of waveform V3 is larger than that of waveform V2. As a result, the absolute value |ΔV| of the voltage difference between waveforms V1 and V2 changes according to the contact or proximity of an external object such as a finger Fin and the unevenness of the external object. It should be noted that in order to accurately detect the absolute value |ΔV| of the voltage difference between waveform V1 and waveform V2 or waveform V3, the voltage detection circuit DET preferably adopts the following operation: through the switch in the circuit, the charging and discharging time Reset of the reset capacitor is set according to the frequency of the drive signal Vs.

[0064] The detection circuit 40 compares the absolute value |ΔV| with the first threshold value Vth1. If the absolute value |ΔV| is lower than the first threshold value Vth1, the detection circuit 40 determines that the finger Fin is in a non-contact state. On the other hand, if the absolute value |ΔV| is greater than the first threshold value Vth1, the detection circuit 40 determines that the finger Fin is in contact or close to the state. Moreover, the detection circuit 40 compares the absolute value |ΔV| with the second threshold value Vth2. If the absolute value |ΔV| is lower than the second threshold value Vth2, the detection circuit 40 determines that the concave part of the finger Fin is in contact. On the other hand, if the absolute value |ΔV| is greater than the second threshold value Vth2, the detection circuit 40 determines that the convex part of the finger Fin is in contact. It should be noted that the second threshold value Vth2 is a value greater than the first threshold value Vth1.

[0065] Figure 7 It is a cross-sectional view showing a configuration example of a substrate of a detection device. Figure 7 To indicate cutting along line A11-A12 described later Figure 8 The sensor unit 1 is provided on the substrate 10. Figure 7 As shown, the substrate 10 has a base material 101, a semiconductor layer 103, an insulating film 105, a gate electrode 107, an insulating film 111, a source electrode 113, a drain electrode 118, an insulating film 117, a shielding layer 24, an insulating film 121, a detection electrode Rx, a conductor 26, and a protective film 131.

[0066] The semiconductor layer 103 is provided on one surface 101a of the substrate 101. The insulating film 105 is provided on the substrate 101 and covers the semiconductor layer 103. The upper surface of the insulating film 105 is planarized.

[0067] The gate electrode 107 is provided on the insulating film 105. The insulating film 111 is provided on the insulating film 105 and covers the gate electrode 107. The upper surface of the insulating film 111 is planarized.

[0068] The insulating film 111 and the insulating film 105 are provided with through holes with the semiconductor layer 103 as the bottom surface. In addition, the insulating film 111 is provided with a source electrode 113 and a drain electrode 118. The source electrode 113 and the drain electrode 118 are connected to the semiconductor layer 103 via the through holes provided in the insulating film 111 and the insulating film 105, respectively.

[0069] The insulating film 117 is provided on the insulating film 111 and covers the source electrode 113 and the drain electrode 118. The upper surface of the insulating film 117 is flattened. The shielding layer 24 is provided on the insulating film 117. The insulating film 121 is provided on the insulating film 117 and covers the shielding layer 24. The upper surface of the insulating film 121 is flattened. Through holes having the drain electrode 118 as the bottom surface are provided on the insulating film 117 and the insulating film 121. The detection electrode Rx is provided on the insulating film 121. The detection electrode Rx is connected to the drain electrode 118 via the through holes provided on the insulating film 121 and the insulating film 117. In addition, the conductor 26 is provided on the insulating film 121. The protective film 131 is provided on the insulating film 121 and covers the detection electrode Rx and the conductor 26.

[0070] An example will be given of the material of each film stacked on the substrate 101. The insulating film 105, the insulating film 111, the insulating film 117, and the insulating film 121 are composed of an inorganic insulating film, for example, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film. It should be noted that any one of the insulating film 105, the insulating film 111, the insulating film 117, and the insulating film 121 may also be an organic insulating film. In addition, the insulating film 105, the insulating film 111, the insulating film 117, and the insulating film 121 are not limited to a single layer, but may also be a film of a stacked structure. For example, the insulating film 105 is a film of a stacked structure in which a silicon nitride film is formed on a silicon oxide film.

[0071] The semiconductor layer 103 is composed of, for example, an amorphous silicon film, a polycrystalline silicon film, or an oxide semiconductor film. The gate electrode 107 is composed of aluminum (Al), copper (Cu), silver (Ag), molybdenum (Mo), or an alloy film thereof. The source electrode 113 and the drain electrode 118 are composed of a titanium aluminum (TiAl) film, which is an alloy of titanium and aluminum. The shielding layer 24, the detection electrode Rx, and the conductor 26 are composed of a conductive film that can transmit visible light. Hereinafter, the property of being able to transmit visible light is referred to as light transmittance. As a light-transmitting conductive film, for example, an ITO (Indium Tin Oxide) film can be cited. It should be noted that the detection electrode Rx and the conductor 26 can also be formed by a mesh of metal filaments with openings. The protective film 131 is, for example, a passivation film. The protective film 131 is, for example, an insulating film, which is composed of a film of an inorganic material such as a silicon nitride film or a resin film. The protective film 131 and Figure 4 It should be noted that the protective film 131 and the protective layer 33 may be independent layers and may be made of different materials.

[0072] The gate electrode 107 has a top gate structure disposed above the semiconductor layer 103, but is not limited thereto and may also have a bottom gate structure disposed below the semiconductor layer 103. In addition, the detection device 100 may not include the shielding layer 24 and the insulating layer 121.

[0073] Figure 8 FIG. 2 is a plan view showing an example of the structure of a detection device. Figure 8 As shown, the detection device 100 includes a substrate 10, a first circuit substrate 20, and a second circuit substrate 30. For example, the substrate 10 and the first circuit substrate 20 are arranged on one side of the second circuit substrate 30. The first circuit substrate 20 is, for example, a flexible substrate. The second circuit substrate 30 is, for example, a rigid substrate such as a printed circuit board (PCB). The first circuit substrate 20 relays the substrate 10 and the second circuit substrate 30.

[0074] like Figure 8 As shown, a sensor unit 1, a clock signal generating circuit 110 and a counter circuit 116 are provided on the substrate 10. The counter circuit 116 includes a first selection circuit 14 and a second selection circuit 15. The detection electrode Rx included in the sensor unit 1 is connected to the first selection circuit 14 via a scanning line GCL. In addition, the detection electrode Rx included in the sensor unit 1 is connected to the input side of the second selection circuit 15 via a data line SGL. The counter circuit 116 is connected to the first selection circuit 14, the second selection circuit 15 and the clock signal generating circuit 110 via wiring. The first selection circuit 14 is arranged between the detection electrode Rx and the detection electrode Tx. In addition, the conductor 26 is arranged between the first selection circuit 14 and the detection electrode Rx.

[0075] The first circuit substrate 20 is provided with an IC 21. The output side of the second selection circuit 15 is connected to a plurality of terminals of the IC 21 via a plurality of wires 16A. In addition, the conductor 26 is connected to one terminal of the IC 21 via a wire 16B. In addition, the counter circuit 116 is connected to the IC 21 via a wire. In addition, the clock signal generation circuit 110 is connected to the IC 21 via a wire.

[0076] The detection electrode Tx is provided on one side of the second circuit substrate 30. The clock signal generating circuit 110 is connected to the detection electrode Tx via the IC 21 and the wiring on the second circuit substrate 30. The detection electrode Tx may be in a ring shape surrounding the sensor unit 1, but Figure 8As shown, the shape may also be a shape in which a portion of the ring surrounding the sensor unit 1 is missing. For example, the detection electrode Tx may be a shape in which one of the four sides of the quadrilateral ring surrounding the sensor unit 1 is missing. For example, the detection electrode Tx may be configured so as not to overlap with the data line SGL connecting the sensor unit 1 and the second selection circuit 15 in a plan view. In addition, the detection electrode Tx may also be configured so as not to overlap with the wiring 16A connecting the second selection circuit 15 and IC21 in a plan view. Thus, it is possible to suppress the drive signal Vs provided to the detection electrode Tx from affecting the data line SGL or the wiring 16A to form noise.

[0077] Figure 1 At least a part of the structure of the detection control circuit 11 and at least a part of the structure of the detection circuit 40 shown in FIG. Figure 1 Among the various components of the detection circuit 40 shown in FIG. 1 , the detection signal amplification circuit 42, the A / D conversion circuit 43, the signal operation circuit 44, the coordinate extraction circuit 45, the synthesis circuit 46, the detection timing control circuit 47, and the storage circuit 48 are included in the IC 21. Figure 1 Among the various structures of the detection control circuit 11 shown, the clock signal generation circuit 110 is included in the IC 21. Figure 1 At least a portion of the detection circuit 40 shown is formed on the substrate 10. For example, Figure 1 Among the various configurations of the detection control circuit 11 shown, the counter circuit 116 and the clock signal generating circuit 110 are formed on the substrate 10. It should be noted that the IC 21 may have a protection circuit as a circuit connected to the clock signal generating circuit 110 and the detection electrode Tx. The protection circuit is, for example, a diode. ESD (Electro-Static Discharge) may be transmitted from the detection electrode Tx to the sensor unit 1 through the IC 21. Therefore, the protection circuit protects the sensor unit 1 from the influence of ESD.

[0078] It should be pointed out that Figure 1 At least a part of the structure of the detection control circuit 11 shown may be included in the first selection circuit 14. For example, the first control circuit 114 may be included in the first selection circuit 14. In addition, Figure 1At least a portion of the detection control circuit 11 shown in the figure or at least a portion of the detection circuit 40 is included in an IC that is set separately from IC21 and configured on the second circuit substrate 30. For example, the protection circuit is provided on the second circuit substrate 30 and can be connected to the clock signal generating circuit 110 and the detection electrode Tx without passing through IC21. In addition, the detection control circuit 11 and at least a portion of the detection circuit 40 can be included in a CPU (Central Processing Unit) that is configured on an external substrate connected to the second circuit substrate 30. In addition, the substrate 10 can have an integrated circuit that is not shown in the figure. In this case, Figure 1 At least a part of the detection control circuit 11 or at least a part of the detection circuit 40 may be included in an integrated circuit included in the substrate 10. For example, among various structures of the detection circuit 40, the detection signal amplifying circuit 42 is included in an integrated circuit included in the substrate 10.

[0079] Next, a method of detecting a fingerprint using the detection device 100 is described. The detection device 100 detects a fingerprint by performing code selection driving on a detection electrode block RxB including a plurality of detection electrodes Rx. Here, the code selection driving is a detection operation based on a predetermined code. Fig. 9 FIG. 1 is a diagram showing a selection form of detection electrodes by code selection driving. Fig. 9 (A) shows the selection form of the detection electrode Rx in the detection operation Td1. Fig. 9 (B) shows the selection form of the detection electrode Rx in the detection operation Td2. Fig. 9 (C) shows the selection form of the detection electrode Rx in the detection operation Td3. Fig. 9 (D) represents the selection form of the detection electrode Rx in the detection operation Td4.

[0080] First, the case of code selection driving of one detection electrode block RxB(l) is described. Fig. 9 As shown in FIG. 1 , the detection electrode block RxB(l) includes n detection electrodes Rx arranged in parallel along the column direction (Y direction). n is an integer greater than 1. In the first embodiment, n is 4. In addition, n is a value less than or equal to the order d of the matrix Hv as a predetermined code. In the first embodiment, n is 4, which is equal to the order d of the matrix Hv. The four detection electrodes Rx are connected to the same data line SGL(l) (see FIG. 1 ) via the switch element SW1. Figure 3) is connected. In addition, the n detection electrodes Rx are respectively connected to the n scanning lines GCL. The detection control circuit 11 provides the detection electrode Tx to the drive signal Vs. The first selection circuit 14 provides a scanning signal to the scanning line GCL corresponding to the selected detection electrode Rx in the detection electrode block RxB(l), and turns on the switch element SW1 corresponding to the selected detection electrode Rx (first selection object). As a result, the selected detection electrode Rx is connected to the data line SGL(l), and the detection signal Sv is output from the data line SGL(l) to the second selection circuit 15.

[0081] If the g-th component of any f-th row when the predetermined code is a square matrix Hv is set to Hv fg , then the detection signal Sv output in the f-th detection operation Td based on the square matrix Hv is f and the detection signal Si outputted from the g-th detection electrode Rx included in the detection electrode block RxB g The relationship is expressed by the following formula (1). As shown in formula (1), the detection signal Si of the selected detection electrode Rx is integrated g The obtained value is output as the detection signal Sv. f The detection signal Si output from the selected detection electrode Rx g It is represented by the sum of. It should be noted that f and g are integers greater than 1, for example. In addition, in formula (1), an example of selecting the detection electrode Rx based on the code of the fth row of the square matrix Hv in the fth detection operation Td is shown, but the detection operation Td is not limited to this. In other words, the detection operation Td may also be implemented in a non-column direction of the matrix.

[0082]

Mathematical formula 1

[0083]

[0084] The detection signal Sc is obtained by calculating the signal output from the detection electrode Rx selected from the detection electrode block RxB(l) based on a predetermined code. The predetermined code is defined by, for example, a square matrix Hv. The square matrix Hv is a Hadamard matrix, which has "1" or "-1" as an element, and any two different rows constitute an orthogonal matrix. The order d of the square matrix Hv is 2 NaRepresents. Here, Na is an integer greater than 1, and in embodiment 1, as shown in the following formula (2), Na is 2. It should be noted that the order of the Hadamard matrix represents, for example, the number of elements in the vertical direction of the matrix. For example, in the detection electrode block RxB(l), the detection electrode Rx is selected based on the positive and negative codes of the Hadamard matrix. Therefore, the signal output from the detection electrode block RxB(l) (that is, the signal output from the selected detection electrode Rx) is determined by the positive and negative codes of the Hadamard matrix. The detection signal Sv output from the detection electrode block RxB(l) corresponds to the number of multiple detection electrodes Rx as the first selection object in the first selection operation and the arrangement of the multiple detection electrodes Rx as the first selection object.

[0085]

Mathematical formula 2

[0086]

[0087] The order d of the square matrix Hv is equal to or greater than the number (n) of detection electrodes Rx contained in the detection electrode block RxB(l). Fig. 9 In the example shown, the number of steps d is 4, which is equal to the number of detection electrodes Rx.

[0088] like Fig. 9 As shown in (A) to (D), an example of code selection drive is described by dividing the four detection operations of detection operation Td1, detection operation Td2, detection operation Td3 and detection operation Td4. In this embodiment, detection operation Td1, detection operation Td2, detection operation Td3, detection operation Td4 are one of the positive code selection operations Tdp1, Tdp2, Tdp3, Tdp4 or the negative code selection operations Tdm1, Tdm2, Tdm3, Tdm4. It should be pointed out that in the following description, when there is no need to distinguish the detection operation Td1, detection operation Td2, detection operation Td3, detection operation Td4, it is referred to as detection operation Td. Similarly, when there is no need to distinguish the positive code selection operations Tdp1, Tdp2, Tdp3, Tdp4, it is referred to as positive code selection operation Tdp. Similarly, when there is no need to distinguish between the negative code selection operations Tdm1, Tdm2, Tdm3, and Tdm4, they are simply referred to as the negative code selection operation Tdm.

[0089] In the first embodiment, as the detection operation Td, the positive code selection operation Tdp is performed. In other words, the detection control circuit 11 ( Figure 1 The detection control circuit 11 selects the detection electrode Rx of the first selection object according to the selection signal Vgclp corresponding to the component "1" of the square matrix Hv. In addition, the detection control circuit 11 selects the detection electrode Rx of the second selection object that is not included in the detection electrode Rx of the first selection object. The detection control circuit 11 sends a signal to the first selection circuit 14 (see Figure 1) provides a selection signal Vgclp, and the first selection circuit 14 provides a selection signal Vgclp to the scanning line GCL (see Figure 3 ) provides a scan signal based on the selection signal Vgclp.

[0090] Thus, the detection electrode Rx of the first selected object is relative to the detection circuit 40 (see Figure 1 ) forms a connected state, and the second selected detection electrode Rx forms a disconnected state relative to the detection circuit 40. The connected state means that the selected detection electrode Rx is connected to the detection circuit 40 via the data line SGL and the second selection circuit 15 (see Figure 1 ) is connected to the detection circuit 40. The disconnected state refers to a state in which the selected detection electrode Rx is not connected to the detection circuit 40. Fig. 9 In (A) to (D) of FIG. 1 , in order to easily distinguish between the first selected object and the second selected object, the detection electrode Rx of the first selected object is indicated by hatching.

[0091] The detection signal Svp is output from the detection electrode block RxB to the detection circuit 40 via a data line SGL and the second selection circuit 15. Here, the detection signal Svp is a signal obtained by integrating the detection signals Si from the detection electrode Rx of the first selection object selected by the selection signal Vgclp. As described above, the selection signal Vgclp corresponds to the component "1" of the matrix Hv.

[0092] In the first embodiment, the first selection circuit 14 and the second selection circuit 15 perform positive code selection operations Tdp1, Tdp2, Tdp3, and Tdp4 to connect or disconnect the detection electrode Rx and the detection circuit 40 in order to obtain the detection signal Svp. In this way, the first selection circuit 14 and the second selection circuit 15 function as a connection circuit. Here, the selection form Cpp1 using the positive code selection operation Tdp1, the selection form Cpp2 using the positive code selection operation Tdp2, the selection form Cpp3 using the positive code selection operation Tdp3, and the selection form Cpp4 using the positive code selection operation Tdp4 are different. That is, the positive code selection operation Tdp includes a plurality of selection forms Cpp indicating whether to connect any detection electrode Rx among the detection electrodes Rx included in the detection electrode block RxB to the detection circuit 40. In addition, even if the connection state and the disconnection state in any one of the selection forms Cpp (first selection form) of the positive code selection operation Tdp are reversed, it will not change to other selection forms Cpp included in the positive code selection operation Tdp. That is, the plurality of selection forms Cpp included in the positive code selection operation Tdp does not include a selection form in which the detection electrode of the first selection target in any of the plurality of selection forms is turned off and the detection electrode of the second selection target is turned on.

[0093] The signal operation circuit 44 outputs the detection signal Svp to the storage circuit 48 and temporarily stores the detection signal Sv. In other words, the matrix ScX composed of the detection signals Sc of all the detection operations Td is equal to the HvSiX obtained by multiplying the matrix Hv by the matrix SiX, and the matrix SiX is composed of the detection signals Si from all the detection electrodes Rx contained in the detection electrode block RxB. In addition, HvSiX is equal to the value obtained by subtracting HvmSiX from HvpSiX, and HvpSiX is obtained by multiplying the matrix Hvp obtained by replacing the component "-1" of the matrix Hv with 0 by the matrix SiX, and HvmSiX is obtained by multiplying the matrix Hvm obtained by replacing the component "1" of the matrix Hv with 0 and replacing the component "-1" with "1" by the matrix SiX. HvpSiX corresponds to the matrix SvpX of the detection signal Svp detected by all the positive code selection operations Tdp. In addition, HvmSiX corresponds to the matrix SvmX of the detection signal Svm detected by all negative code selection operations Tdm.

[0094] When the order d of the square matrix Hv is 4, as shown in the following formula (3), if the square matrix Hv is multiplied by the matrix SiX composed of four detection signals Si (Si1, Si2, Si3, Si4) of the detection electrode block Rx contained in one detection electrode block RxB, four detection signals Sc (Sc1, Sc2, Sc3, Sc4) are obtained. These four detection signals Sc are respectively obtained from four detection signals Svp (Svp1, Svp2, Svp3, Svp4).

[0095]

Mathematical formula 3

[0096]

[0097] Here, as an example, a method for obtaining a detection signal Sc (Sc1, Sc2, Sc3, Sc4) from four detection signals Svp (Svp1, Svp2, Svp3, Svp4) is described. In this description, it is assumed that the detection signal Si is (Si1, Si2, Si3, Si4) = (1, 7, 3, 2) as an example. The detection signal Si1 is a signal output from the detection electrode Rx (k). The detection signal Si2 is a signal output from the detection electrode Rx (k+1). The detection signal Si3 is a signal output from the detection electrode Rx (k+2). The detection signal Si4 is a signal output from the detection electrode Rx (k+3). A detection signal Sv is output from the sensor unit 1, and the detection signal Sv is integrated from the detection signal Si of the detection electrode Rx selected from a detection electrode block RxB. Therefore, the detection circuit 40 calculates each detection signal Si through the following operation.

[0098] like Fig. 9As shown in (A), in the positive code selection operation Tdp1 of the detection operation Td1, the detection control circuit 11 (see Figure 1 ) and the first selection circuit 14 select four detection electrodes Rx(k), Rx(k+1), Rx(k+2), Rx(k+3) as the first selection objects corresponding to the component "1" of the first row of the square matrix Hv. As a result, the detection electrodes Rx(k), Rx(k+1), Rx(k+2), Rx(k+3) are connected. Therefore, according to formula (3), the detection signal Svp1 detected by the detection circuit 40 is Svp1=1×1+1×7+1×3+1×2=13.

[0099] Then, if Fig. 9 As shown in (B), in the positive code selection operation Tdp2 of the detection operation Td2, the detection control circuit 11 and the first selection circuit 14 select the detection electrodes Rx(k) and Rx(k+2) as the first selection objects corresponding to the component "1" of the second row of the square matrix Hv. As a result, the detection electrodes Rx(k) and Rx(k+2) are connected. In addition, the detection control circuit 11 selects the detection electrodes Rx(k+1) and Rx(k+3) as the second selection objects and makes them disconnected. Therefore, according to formula (3), the detection signal Svp2 detected by the detection circuit 40 is Svp2=1×1+0×7+1×3+0×2=4.

[0100] Then, if Fig. 9 As shown in (C), in the positive code selection operation Tdp3 of the detection operation Td3, the detection control circuit 11 and the first selection circuit 14 select the detection electrodes Rx(k) and Rx(k+1) as the first selection objects corresponding to the component "1" of the third row of the square matrix Hv. As a result, the detection electrodes Rx(k) and Rx(k+1) are connected. In addition, the detection control circuit 11 and the first selection circuit 14 select the detection electrodes Rx(k+2) and Rx(k+3) as the second selection objects and make them disconnected. Therefore, according to formula (3), the detection signal Svp3 detected by the detection circuit 40 is Svp3=1×1+1×7+0×3+0×2=8.

[0101] Then, if Fig. 9As shown in (D), in the positive code selection operation Tdp4 of the detection operation Td4, the detection control circuit 11 and the first selection circuit 14 select the detection electrodes Rx(k) and Rx(k+3) as the first selection objects corresponding to the component "1" of the 4th row of the square matrix Hv. As a result, the detection electrodes Rx(k) and Rx(k+3) are connected. In addition, the detection control circuit 11 and the first selection circuit 14 select the detection electrodes Rx(k+1) and Rx(k+2) as the second selection objects and make them disconnected. Therefore, according to formula (3), the detection signal Svp4 detected by the detection circuit 40 is Svp4=1×1+0×7+0×3+1×2=3.

[0102] Here, the matrix HvX formed by multiplying the square matrix Hv shown in formula (2) and the matrix X composed of multiple detection signals Si of multiple detection electrodes Rx contained in the detection electrode block RxB can be deformed as shown in formula (4). The square matrix Hv can be expressed as a square matrix obtained by subtracting the square matrix Hvm from the square matrix Hvp, wherein the square matrix Hvp is obtained by replacing the component "-1" of the square matrix Hv with the component "0"; the square matrix Hvm is obtained by replacing the component "1" of the square matrix Hv with the component "0" and replacing the component "-1" with the component "1". Therefore, the matrix HvX can be expressed as a square matrix obtained by subtracting the matrix HvmX from the matrix HvpX. It should be noted that, as shown in formula (3), the matrix HvX corresponds to the detection signal Sc (Sc1, Sc2, Sc3, Sc4).

[0103]

Mathematical formula 4

[0104]

[0105] In addition, as shown in formula (4), the square matrix Hv can be expressed as a square matrix obtained by subtracting a square matrix Hvb whose components are all "1" from a square matrix obtained by doubling the square matrix Hvp. In other words, the square matrix Hvb is a square matrix in which the first row of the square matrix Hvp corresponds to all the rows. Therefore, the matrix HvX can be expressed as a matrix obtained by subtracting the matrix HvbX from the square matrix obtained by doubling the matrix HvpX. Here, the matrix HvpX corresponds to the matrix composed of the detection signal Svp (Svp1, Svp2, Svp3, Svp4), and the matrix HvbX corresponds to the matrix composed of the detection signal Svp1.

[0106] The structure of the signal operation circuit 44 is the same as that described with reference to the above formula (4), and four detection signals Sc (Sc1, Sc2, Sc3, Sc4) can be obtained from the four detection signals Svp1, Svp2, Svp3, Svp4. For example, the signal corresponding to the column of all behavioral components "1" in the square matrix Hv is the detection signal Svp1. Therefore, the four detection signals Sc (Sc1, Sc2, Sc3, Sc4) can be obtained by subtracting the detection signal Svp1 from the values ​​obtained by multiplying the detection signals Svp1, Svp2, Svp3, Svp4 by 2. The four detection signals Svp1, Svp2, Svp3, Svp4 can be expressed as (Svp1, Svp2, Svp3, Svp4) = (13, 4, 8, 3). Therefore, the values ​​obtained by multiplying the detection signals Svp1, Svp2, Svp3, and Svp4 by 2 are (Svp1, Svp2, Svp3, Svp4)×2=(26, 8, 16, 6). If the detection signal Svp1 is subtracted from them, it becomes (26, 8, 16, 6)-(13, 13, 13, 13)=(13, -5, 3, -7). In this way, the signal operation circuit 44 calculates four detection signals Sc (Sc1, Sc2, Sc3, Sc4)=(13, -5, 3, -7) from the detection signal Svp in sequence and outputs them to the storage circuit 48. That is, the signal operation circuit 44 functions as a calculation unit that subtracts the basic signal obtained by taking all of the multiple detection electrodes Rx as the first selection object from the doubled signal obtained by doubling the signal strength of one selection form. It should be noted that the basic signal is, for example, a detection signal (detection signal Svp1 ) when all the detection electrodes Rx included in the detection electrode block RxB are in a connected state.

[0107] The signal operation circuit 44 decodes the four detection signals Sc (Sc1, Sc2, Sc3, Sc4) = (13, -5, 3, -7) by the following formula (5). The signal operation circuit 44 calculates the decoded detection signal Sid (Si1d, Si2d, Si3d, Si4d) = (4, 28, 12, 8) by multiplying the square matrix Hv with the matrix composed of the detection signals Sc.

[0108]

Mathematical formula 5

[0109]

[0110] The decoded detection signal Sid corresponds to the value obtained by multiplying the detection signal Si from the detection electrode Rx by d. Here, d corresponds to the order d of the matrix Hv, and in this embodiment, d is 4. Si1d is assigned to the detection electrode Rx(k). The decoded detection signal Si2d is assigned to the detection electrode Rx(k+1). The decoded detection signal Si3d is assigned to the detection electrode Rx(k+2). The decoded detection signal Si4d is assigned to the detection electrode Rx(k+3). The values ​​of the decoded detection signals Si1d, Si2d, Si3d, and Si4d of the detection electrode Rx corresponding to the position of the convex or concave portion vary according to the concave and convex of the finger Fin.

[0111] According to the above code selection drive, by using the signal operation circuit 44 to decode the detection signal Si (Si1, Si2, Si3, Si4) = (1, 7, 3, 2) using formula (5), the decoded detection signal Sid (Si1d, Si2d, Si3d, Si4d) = (4, 28, 12, 8) can be obtained. The signal strength of the decoded detection signal Sid becomes 4 times that of the detection signal Si. That is, it is possible to obtain a signal strength 4 times that of the time-division selection drive without increasing the voltage of the drive signal Vs. Therefore, even when noise invades from the outside, the noise resistance of the detection device 100 can be improved by enhancing the signal strength.

[0112] In addition, according to Embodiment 1, the detection control circuit 11 switches the connection state and the disconnection state for the detection electrode Rx of the first selection object selected based on the predetermined code and the detection electrode Rx of the second selection object not included in the first selection object. The detection circuit 40 performs decoding processing on each detection signal output from the detection electrode Rx for each selection form Cpp of the different detection electrodes Rx.

[0113] Fig.10 1 is a timing waveform diagram showing an operation example of the detection device in Embodiment 1. As described above, in the code selection drive, the positive code selection operation Tdp is continuously performed. Fig.10 In the example shown, for a detection electrode block RxB(l) (see Fig. 9 ), and successively perform the positive code selection operation Tdp1, the positive code selection operation Tdp2, the positive code selection operation Tdp3, and the positive code selection operation Tdp4.

[0114] Next, a description will be given of a case where code selection driving is performed on a plurality of detection electrode blocks RxB(1), RxB(1+1), RxB(1+2), and RxB(1+3). Fig.11A , Fig. 11B FIG. 2 is a diagram showing a selection form of detection electrodes by positive code selective driving for a plurality of detection electrode blocks. Fig.11A (A) is a diagram showing the first selection form in the positive code selection operation Tdp1. Fig.11A (B) is a diagram showing the second selection form in the positive code selection operation Tdp1. Fig.11A (C) is a diagram showing the third selection form in the positive code selection operation Tdp1. Fig.11A (D) is a diagram showing the fourth selection form in the positive code selection operation Tdp1. Fig. 11B (E) is a diagram showing the selection form in the positive code selection operation Tdp2. Fig. 11B (F) is a diagram showing the selection form in the positive code selection operation Tdp3. Fig. 11B (G) is a diagram showing the selection form in the positive code selection operation Tdp4.

[0115] like Fig.11A , Fig. 11B As shown, the four detection electrode blocks RxB(l), RxB(l+1), RxB(l+2), and RxB(l+3) respectively have four detection electrodes Rx(k), Rx(k+1), Rx(k+2), and Rx(k+3) arranged in parallel along the column direction. In addition, the four detection electrode blocks RxB(l), RxB(l+1), RxB(l+2), and RxB(l+3) are arranged in parallel at equal intervals along the row direction. It should be pointed out that in the following description, when there is no need to distinguish the detection electrode blocks RxB(l), RxB(l+1), RxB(l+2), and RxB(l+3), they are simply referred to as detection electrode blocks RxB.

[0116] In addition, the plurality of detection electrodes Rx included in each detection electrode block RxB are connected to the same data line SGL via the switch element SW1. For example, the four detection electrodes Rx included in the detection electrode block RxB(1) are connected to the data line SGL(1) via the switch element SW1.

[0117] The second selection circuit 15 includes a plurality of switch elements SW2. The switch elements SW2 switch the connection and disconnection between each data line SGL and the detection circuit 40. The switch elements SW2 are connected to the switch control lines SWL, respectively. The second selection circuit 15 has four switch elements, for example, switch elements SW2(l), SW2(l+1), SW2(l+2), and SW2(l+3). The switch element SW2(l) turns on or off the connection between the data line SGL(l) and the detection circuit 40 based on a signal from the switch control line SWL(l). Similarly, the switch elements SW2(l+1), SW2(l+2), and SW2(l+3) switch the connection and disconnection between each data line SGL(l+1), (l+2), and (l+3) and the detection circuit 40 based on a signal from the switch control lines SWL(l+1), SWL(l+2), and SWL(l+3). It should be noted that in the following description, when there is no need to distinguish between the switch elements SW2(1), SW2(1+1), SW2(1+2), and SW2(1+3), they are simply referred to as the switch element SW2.

[0118] When performing the positive code selection operation Tdp, the detection device 100 performs the positive code selection operation Tdp1 of the detection operation Td1, the positive code selection operation Tdp2 of the detection operation Td2, the positive code selection operation Tdp3 of the detection operation Td3, and the positive code selection operation Tdp4 of the detection operation Td4 for each detection electrode block RxB.

[0119] The execution order of the positive code selection operations Tdp1, Tdp2, Tdp3, and Tdp4 of each detection electrode block RxB is not particularly limited, but in this embodiment, Fig.10 It is performed as shown in the driving waveform.

[0120] The following description will be made by taking the case of performing the positive code selection operation Tdp as an example. The detection device 100 sequentially performs the detection operation Td1 on the plurality of detection electrode blocks RxB. Specifically, Fig.10 and Fig.11A As shown in (A), the first selection circuit 14 performs the positive code selection operation Tdp1 of the detection operation Td1 based on the selection signal Vgclp provided by the first control circuit 114 of the counter circuit 116. As a result, the first selection circuit 14 provides a scanning signal to the switch element SW1 connected to the detection electrode Rx of the first selection object, and the detection electrode Rx of the first selection object is connected to the data line SGL. In this state, as shown in FIG. Fig.11A As shown in (A), the second selection circuit 15 is based on the second control circuit 115 (see Figure 1) is used to turn on the switch element SW2(1) and turn off the switch elements SW2(1+1), SW2(1+2), and SW2(1+3). As a result, among the four data lines SGL, the data line SGL(1) connected to the detection electrode block RxB(1) is connected to the detection circuit 40, and the other data lines SGL are disconnected from the detection circuit 40. As a result, the detection signal Svp1 is output from the data line SGL(1).

[0121] Then, if Fig.10 and Fig.11A As shown in (B), the second selection circuit 15 turns on the switch element SW2(l+1) and turns off the switch elements SW2(l), SW2(l+2), and SW2(l+3) based on the selection signal Vsel from the second control circuit 115. As a result, the data line SGL(l+1) connected to the detection electrode block RxB(l+1) is connected to the detection circuit 40, and the other data lines SGL are disconnected from the detection circuit 40. As a result, the detection signal Svp1 is output from the data line SGL(l+1).

[0122] Then, if Fig.10 and Fig.11A As shown in (C), the second selection circuit 15 turns on the switch element SW2(1+2) and turns off the switch elements SW2(1), SW2(1+1), and SW2(1+3) based on the signal from the second control circuit 115. As a result, the data line SGL(1+2) connected to the detection electrode block RxB(1+2) is connected to the detection circuit 40, and the other data lines SGL are disconnected from the detection circuit 40. As a result, the detection signal Svp1 is output from the data line SGL(1+2).

[0123] Then, if Fig.10 and Fig.11A As shown in (D), the second selection circuit 15 turns on the switch element SW2(l+3) and turns off the switch elements SW2(l), SW2(l+1), and SW2(l+2) based on the signal from the second control circuit 115. As a result, the data line SGL(l+3) connected to the detection electrode block RxB(l+3) is connected to the detection circuit 40, and the other data lines SGL are disconnected from the detection circuit 40. As a result, the detection signal Svp1 is output from the data line SGL(l+3).

[0124] Then, if Fig.10 As shown, the detection device 100 performs detection operation Td2 on multiple detection electrode blocks RxB in sequence. Fig. 11BAs shown in (E), the first selection circuit 14 performs the positive code selection operation Tdp2 of the detection operation Td2 based on the selection signal Vgclp provided by the first control circuit 114. Thus, a scanning signal is provided from the first selection circuit 14 to the switch element SW1 connected to the detection electrode Rx of the first selection object, and the detection electrode Rx of the first selection object is connected to the data line SGL. In this state, the second selection circuit 15 turns on the switch element SW2(l) and turns off the switch elements SW2(l+1), SW2(1+2), and SW2(1+3) based on the selection signal Vsel from the second control circuit 115. Thus, the data line SGL(l) connected to the detection electrode block RxB(l) is connected to the detection circuit 40, and the other data lines SGL are disconnected from the detection circuit 40. Thus, the detection signal Svp2 is output from the data line SGL(l).

[0125] like Fig.10 As shown, in the detection operation Td2, similarly to the detection operation Td1, the second selection circuit 15 switches the switch element SW2 to connect the data lines SGL(1), SGL(1+1), SGL(1+2), and SGL(1+3) to the detection circuit 40. As a result, the detection signal Svp2 corresponding to each detection electrode block RxB is output from the data line SGL to the detection circuit 40.

[0126] Then, if Fig.10 As shown in FIG. 1 , the detection device 100 sequentially performs the detection operation Td3 on the plurality of detection electrode blocks RxB. Specifically, Fig. 11B As shown in (F), the first selection circuit 14 performs the positive code selection operation Tdp3 of the detection operation Td3 based on the selection signal Vgclp provided by the first control circuit 114. Thus, a scanning signal is provided from the first selection circuit 14 to the switch element SW1 connected to the detection electrode Rx of the first selection object, and the detection electrode Rx of the first selection object is connected to the data line SGL. In this state, the second selection circuit 15 turns on the switch element SW2(l) and turns off the switch elements SW2(l+1), SW2(1+2), and SW2(1+3) based on the selection signal Vsel from the second control circuit 115. Thus, the data line SGL(l) is connected to the detection circuit 40, and the other data lines SGL are disconnected from the detection circuit 40. Thus, the detection signal Svp3 is output from the data line SGL(l).

[0127] like Fig.10As shown, in the detection operation Td3, similarly to the detection operation Td1 and the detection operation Td2, the second selection circuit 15 switches the switch element SW2 to connect the data lines SGL(1), SGL(1+1), SGL(1+2), and SGL(1+3) to the detection circuit 40. As a result, the detection signal Svp3 corresponding to each detection electrode block RxB is output from the data line SGL to the detection circuit 40.

[0128] Then, if Fig.10 As shown, the detection device 100 performs detection operation Td4 on a plurality of detection electrode blocks RxB in sequence. Fig. 11B As shown in (G), the first selection circuit 14 performs the positive code selection operation Tdp4 of the detection operation Td4 based on the selection signal Vgclp provided by the first control circuit 114. Thus, a scanning signal is provided from the first selection circuit 14 to the switch element SW1 connected to the detection electrode Rx of the first selection object, and the detection electrode Rx of the first selection object is connected to the data line SGL. In this state, the second selection circuit 15 turns on the switch element SW2(l) and turns off the switch elements SW2(l+1), SW2(1+2), and SW2(1+3) based on the selection signal Vsel from the second control circuit 115. Thus, the data line SGL(l) is connected to the detection circuit 40, and the other data lines SGL are disconnected from the detection circuit 40. Thus, the detection signal Svp4 is output from the data line SGL(l).

[0129] like Fig.10 As shown, in the detection operation Td4, similarly to the detection operations Td1, Td2, and Td3, the second selection circuit 15 switches the switch element SW2 to connect the data lines SGL(1), SGL(1+1), SGL(1+2), and SGL(1+3) to the detection circuit 40 one by one. The first selection circuit 14 performs the positive code selection operation Tdp4 of the detection operation Td4 on the detection electrode blocks RxB connected to the detection circuit 40 via the data lines SGL. As a result, the detection signal Svp4 corresponding to each detection electrode block RxB is output from the data lines SGL to the detection circuit 40.

[0130] Signal operation circuit 44 (see Figure 1) Four detection signals Sc (Sc1, Sc2, Sc3, Sc4) are calculated for each detection electrode block RxB. When the positive code selection operation Tdp is performed, the detection signal Sc1 is calculated by the detection signal Svp1. The detection signal Sc2 is calculated by the detection signal Svp1 and the detection signal Svp2. The detection signal Sc3 is calculated by the detection signal Svp1 and the detection signal Svp3. The detection signal Sc4 is calculated by the detection signal Svp1 and the detection signal Svp4. In addition, the signal operation circuit 44 outputs the four detection signals Sc (Sc1, Sc2, Sc3, Sc4) to the storage circuit 48 for each detection electrode block RxB. The signal operation circuit 44 decodes the four detection signals Sc (Sc1, Sc2, Sc3, Sc4) for each detection electrode block RxB by the above-mentioned formula (5).

[0131] In each detection electrode block RxB, the decoded detection signal Si1d corresponds to the detection electrode Rx(k). The decoded detection signal Si2d corresponds to the detection electrode Rx(k+1). The decoded detection signal Si3d corresponds to the detection electrode Rx(k+2). The decoded detection signal Si4d corresponds to the detection electrode Rx(k+3). In each detection electrode block RxB, when the concave and convex part of the finger Fin contacts or approaches, the values ​​of the decoded detection signals Si1d, Si2d, Si3d, and Si4d of the detection electrode Rx corresponding to its position change.

[0132] The coordinate extraction circuit 45 can obtain the coordinates of the detection electrode Rx that is in contact with or close to the concave or convex part of the finger Fin in each detection electrode block RxB based on the decoded detection signals Si1d, Si2d, Si3d, and Si4d. The coordinate extraction circuit 45 outputs the detection coordinates to the synthesis circuit 46. The synthesis circuit 46 combines the decoded detection signals Si1d, Si2d, Si3d, and Si4d to generate two-dimensional information representing the shape of the object in contact or close. The synthesis circuit 46 outputs the two-dimensional information as the output signal Vout of the detection circuit 40. Alternatively, the synthesis circuit 46 can generate an image based on the two-dimensional information and use the image information as the output signal Vout. It should be noted that the detection circuit 40 can output the coordinates output by the coordinate extraction circuit 45 as the output signal Vout. In addition, the detection circuit 40 does not have the coordinate extraction circuit 45 and the synthesis circuit 46, and outputs the decoded detection signals Si1d, Si2d, Si3d, and Si4d as the output signal Vout.

[0133] As described above, according to Embodiment 1, the detection signal Sid (detection signals Si1d, Si2d, Si3d, Si4d) of each detection electrode Rx included in the detection electrode block RxB is obtained from the detection signal Svp, which is obtained by only one positive code selection operation Tdp of two code selection operations based on a predetermined code, namely, the positive code selection operation Tdp and the negative code selection operation Tdm. Therefore, compared with the case where both the positive code selection operation Tdp and the negative code selection operation Tdm are performed, the detection signal Sid of each detection electrode Rx included in each detection electrode block RxB can be output in a less selection form.

[0134] In addition, by performing only the positive code selection operation Tdp as the detection operation Td, the time required to complete one frame of the detection operation Td can be shortened, and the amount of data that the recording circuit 48 needs to maintain before completing one frame of the detection operation Td can be reduced. Therefore, the requirements for the processing power, processing time, and storage capacity of the detection circuit 40 can be further reduced, and the burden can be reduced and the accuracy can be improved at the same time. Here, one frame of the detection operation Td corresponds to the cycle of the detection operation Td of the same selection form for one detection electrode block RxB, for example, it represents the time from the detection operation Td1 being performed on the detection electrode block RxB(l) to the detection operation Td1 being performed on the detection electrode block RxB(l) again. In addition, one frame of the detection operation Td can also represent the time required to complete all the selection forms of the positive code selection operations Tdp for one detection electrode block RxB. All selection forms refer to selection forms below the order d of the matrix Hv corresponding to the predetermined code. For example, in this embodiment, all selection forms are four selection forms (Cpp1, Cpp2, Cpp3, Cpp4) corresponding to the order d of the matrix Hv. One frame can also represent the time required to complete these positive code selection operations Tdp1, Tdp2, Tdp3, Tdp4.

[0135] It should be noted that in Embodiment 1, the case where the number n of detection electrodes Rx contained in the detection electrode block RxB(1) is four is described, but it is not limited to this, and the number of detection electrodes Rx may be two, three, or five or more. In addition, the order d of the square matrix Hv is not limited to 4, and may have a value of 2, 3, or 5 or more. It should be noted that the order d of the square matrix Hv has a value at least equal to or greater than the number n of detection electrodes Rx contained in the detection electrode block RxB(1).

[0136] In the above-mentioned first embodiment, the detection device 100 is described as detecting the shape and fingerprint of the finger Fin. However, the detection object of the detection device 100 is not limited to the finger Fin. The detection object of the detection device 100 can be any object that forms a capacitance between the detection object and the detection electrode Rx, for example, the concave and convex of the palm or foot can be detected. The detection device 100 can detect the shape of the palm or the palm print by, for example, detecting the capacitance change caused by the concave and convex of the palm.

[0137] In addition, if Figure 4 As shown in FIG. 1 , the height h3 of the detection electrode Tx from one surface 101a is higher than the height h1 of the detection electrode Rx from one surface 101a. Figure 4 As shown, the height h3 of the detection electrode Tx from one surface 101a is higher than the height h2 of the insulating resin 33 from one surface 101a. Accordingly, when the finger Fin approaches the detection electrode Rx, the finger Fin easily contacts the detection electrode Tx naturally.

[0138] In addition, the detection electrodes Rx are arranged in parallel along a first direction and a second direction intersecting the first direction. For example, the first direction is a row direction and the second direction is a column direction. Accordingly, the shape of the finger Fin and the resolution of the fingerprint detection can be improved.

[0139] (Variation 1 of Implementation Example 1)

[0140] In implementation mode 1, Fig.10 As shown in the figure, the switch elements SW2 of the second selection circuit 15 are sequentially selected in a state where the detection electrode blocks RxB are connected to the data lines SGL in the same selection form Cpp by the first selection circuit 14, but the driving order is not limited to this. Fig.12 1 is a diagram showing a driving waveform corresponding to Modification 1 of Embodiment 1. It should be noted that matters similar to those in Embodiment 1 will not be described in detail.

[0141] In the first modification of the first embodiment, in the state where the switch element SW2(1) of the second selection circuit 15 is connected to the detection circuit 40 based on the signal from the second control circuit 115 to the switch control line SWL(1), the first control circuit 114 and the first selection circuit 14 continuously perform the positive code selection operations Tdp1, Tdp2, Tdp3, and Tdp4. Next, in the state where the switch element SW2(1+1) of the second selection circuit 15 is connected to the detection circuit 40 based on the signal from the second control circuit 115 to the switch control line SWL(1+1), the first control circuit 114 and the first selection circuit 14 continuously perform the positive code selection operations Tdp1, Tdp2, Tdp3, and Tdp4. Similarly, in the state where the switch elements SW2(1+2) and the switch elements SW2(1+3) of the second selection circuit 15 are connected to the detection circuit 40, the first control circuit 114 and the first selection circuit 14 continuously perform the positive code selection operations Tdp1, Tdp2, Tdp3, and Tdp4. In other words, after executing Fig.11A After the same operation as (A), perform the Fig. 11B (E), Fig. 11B (F) Fig. 11B The same operation as (G) is then performed. Fig.11A (B) operation.

[0142] As shown in equations (4) and (5), in order to detect the detection signal Sc and the decoded detection signal Sid, it is necessary to obtain all the detection signals Svp (Svp1, Svp2, Svp3, Svp4). According to variant example 1 of implementation example 1, after all the detection signals Svp (Svp1, Svp2, Svp3, Svp4) based on all the positive code selection operations Tdp (Tdp1, Tdp2, Tdp3, Tdp4) are obtained for one detection electrode block RxB, the positive code selection operation Tdp of the next detection electrode block RxB is started. Therefore, the signal operation circuit 44 can perform the operation processing shown in equations (4) and (5) at the stage after all the positive code selection operations Tdp are completed for one detection electrode block RxB, without waiting for the positive code selection operations Tdp of other detection electrode blocks RxB to be completed. Therefore, the signal operation circuit 44 can perform operation processing on the previous detection electrode block RxB in parallel with the operation of performing the positive code selection operation Tdp of another detection electrode block RxB to obtain the detection signal Svp, thereby shortening the time required to output the output signal Vout.

[0143] In addition, after executing the calculation processing shown in equations (4) and (5), it is not necessary to maintain the detection signal Svp in the storage circuit 48. Therefore, compared with the case where all detection signals Svp are maintained for all detection electrode blocks RxB, the amount of data that needs to be maintained in the storage circuit 48 can be reduced.

[0144] (Implementation Method 2)

[0145] In implementation mode 1, Fig. 9 The case of the positive code selection operation Tdp in the positive code selection operation Tdp and the negative code selection operation Tdm based on the predetermined code is described, but is not limited to this. In the second embodiment, the case of implementing the negative code selection operation Tdm will be described below. It should be noted that the same matters as those in the first embodiment will not be repeated.

[0146] like Fig. 9 As shown, in the negative code selection operation Tdm, the detection control circuit 11 selects the detection electrode Rx of the first selection object according to the selection signal Vgclm corresponding to the component "-1" of the square matrix Hv. In addition, the detection control circuit 11 selects the detection electrode Rx of the second selection object that is not included in the detection electrode Rx of the first selection object. The detection control circuit 11 sends a signal to the first selection circuit 14 (see Figure 1 ) provides a selection signal Vgclm, and the first selection circuit 14 provides a selection signal Vgclm to the scanning line GCL (see Figure 3 ) provides a scanning signal based on the selection signal Vgclm. As a result, the detection electrode Rx of the first selection object forms a connected state, and the detection electrode Rx of the second selection object forms a disconnected state. Here, in one detection operation Td, the detection electrode Rx of the first selection object in the positive code selection operation Tdp corresponds to the detection electrode Rx of the second selection object in the negative code selection operation Tdm. That is, in one detection operation Td, the negative code selection operation Tdm is an operation to reverse the selection form Cpp of the detection electrode Rx of the positive code selection operation Tdp.

[0147] The detection signal Svm (Svm1, Svm2, Svm3, Svm4) is output from the detection electrode block RxB to the detection circuit 40 via a data line SGL and a second selection circuit 15. Here, the detection signal Svm is a signal obtained by integrating the detection signal Si from the detection electrode Rx of the first selection object selected by the selection signal Vgclm. As described above, the selection signal Vgclm corresponds to the component "-1" of the matrix Hv.

[0148] In the second embodiment, the first selection circuit 14 and the second selection circuit 15 perform negative code selection operations Tdm1, Tdm2, Tdm3, and Tdm4 to connect or disconnect the detection electrode Rx and the detection circuit 40 in order to obtain the detection signal Svm. In this way, the first selection circuit 14 and the second selection circuit 15 function as a connection circuit. Here, the selection form Cpm1 using the negative code selection operation Tdm1, the selection form Cpm2 using the negative code selection operation Tdm2, the selection form Cpm3 using the negative code selection operation Tdm3, and the selection form Cpm4 using the negative code selection operation Tdm4 are different. That is, the negative code selection operation Tdm includes a plurality of selection forms of the detection electrodes Rx and the detection circuit 40, and the selection form makes the detection electrode Rx of the first selection object among the plurality of detection electrodes Rx a connection state connected to the detection circuit 40, and makes the detection electrode Rx of the second selection object not included in the detection electrode of the first selection object a disconnection state not connected to the detection circuit 40. Furthermore, even if the connection state and disconnection state in any one of the selection forms Cpm (second selection form) of the negative code selection operation Tdm are reversed, it does not change to another selection form Cpm included in the negative code selection operation Tdm. That is, the plurality of selection forms included in the negative code selection operation Tdm do not include a selection form in which the detection electrode of the first selection object in any one of the plurality of selection forms is in the disconnected state and the detection electrode of the second selection object is in the connected state.

[0149] In the positive code selection operation Tdp1 and the negative code selection operation Tdm1, the relationship between the first selection object and the second selection object is opposite. In addition, in the positive code selection operation Tdp2 and the negative code selection operation Tdm2, the relationship between the first selection object and the second selection object is opposite. In addition, in the positive code selection operation Tdp3 and the negative code selection operation Tdm3, the relationship between the first selection object and the second selection object is opposite. In addition, in the positive code selection operation Tdp4 and the negative code selection operation Tdm4, the relationship between the first selection object and the second selection object is opposite. That is, the relationship between the first selection object and the second selection object of the multiple selection forms (selection form Cpp) contained in one of the two operations (positive code selection operation Tdp) is opposite to the relationship between the first selection object and the second selection object of the multiple selection forms (selection form Cpm) contained in the other (negative code selection operation Tdm).

[0150] Fig.13 FIG. 2 is a diagram showing a driving waveform of a detection device in Embodiment 2. Fig.13As described above, in addition to the negative code selection operation Tdm, the detection device 100 also implements a reference code selection operation Tdb. Specifically, in the reference code selection operation Tdb, the first control circuit 114 outputs a selection signal Vgclb for selecting all the detection electrodes Rx included in the detection electrode block RxB as the first selection object. The first selection circuit 114 provides a scan signal to the scan line GCL connected to the switch element SW1 of all the detection electrodes Rx included in the detection electrode block RxB based on the selection signal Vgclb. All the detection electrodes Rx included in the detection electrode block RxB are connected to the same data line SGL via the switch element SW1 to which the scan signal is provided, and the detection signal Svb is output via the switch element SW1 to which the scan signal is provided.

[0151] Here, the reference code selection operation Tdb corresponds to, for example, the positive code selection operation Tdp1. In other words, the selection form Cpb in the reference code selection operation Tdb corresponds to the inverted form of the selection form Cpm1 of the negative code selection operation Tdm. In addition, the detection signal Svb corresponds to the detection signal Svp1. Therefore, in the detection device 100, in addition to the selection form Cpb of the reference code selection operation Tdb, even if the connection state and the disconnection state in any one of the selection forms Cpm (Cpm1, Cpm2, Cpm3, Cpm4) of the negative code selection operation Tdm are reversed, it will not become the other selection forms Cpm included in the negative code selection operation Tdm.

[0152] Here, as shown in formula (6), the square matrix Hv can be expressed as a square matrix obtained by subtracting a square matrix obtained by doubling the square matrix Hvm from a square matrix Hvb whose components are all "1". Therefore, the matrix HvScX can be expressed as a matrix obtained by subtracting a square matrix obtained by doubling the matrix HvmSiX from a matrix HvbSiX. Here, the matrix HvmSiX corresponds to a matrix composed of detection signals Svm (Svm1, Svm2, Svm3, Svm4), and the matrix HvbSiX corresponds to a matrix composed of detection signals Svb.

[0153]

Mathematical formula 6

[0154]

[0155] The structure of the signal operation circuit 44 is the same as that described with reference to the above-mentioned formula (6), and four detection signals Sc (Sc1, Sc2, Sc3, Sc4) can be obtained from the four detection signals Svm1, Svm2, Svm3, Svm4. Specifically, when the detection signal Si of each detection electrode Rx contained in the detection electrode block RxB is (Si1, Si2, Si3, Si4) = (1, 7, 3, 2), the detection signal Svb is Svb = 1 + 7 + 3 + 2 = 13. In addition, the detection signal Svm is (Svm1, Svm2, Svm3, Svm4) = (0, 7 + 2 = 9, 3 + 2 = 5, 7 + 3 = 10). The four detection signals Sc (Sc1, Sc2, Sc3, Sc4) can be obtained by subtracting the values ​​obtained by multiplying the detection signals Svm1, Svm2, Svm3, Svm4 by 2 from the detection signal Svb. Therefore, similarly to the first embodiment, the detection signal Sc is (Sc1, Sc2, Sc3, Sc4) = (13-0×2 = 13, 13-9×2 = -5, 13-5×2 = 3, 13-10×2 = -7). In this way, the signal operation circuit 44 sequentially calculates the detection signal Sc from the detection signal Svm and outputs it to the storage circuit 48. That is, the signal operation circuit 44 is an operation circuit that subtracts a double signal obtained by doubling the signal strength of one selection form from a basic signal obtained by taking all of the plurality of detection electrodes Rx as the first selection object.

[0156] Similar to the first embodiment, the signal operation circuit 44 calculates the decoded detection signal Sid (Si1d, Si2d, Si3d, Si4d) = (4, 28, 12, 8) based on the formula (5). The decoded detection signal Sid corresponds to the value obtained by multiplying the detection signal Si from the detection electrode Rx by d. Here, d corresponds to the order of the square matrix Hv, and in this embodiment, d is 4. The value of the decoded detection signal Sid of the detection electrode Rx corresponding to the position of the convex part or the concave part changes according to the concave and convex part of the finger Fin.

[0157] According to the above code selection drive, by using the signal operation circuit 44 to decode the detection signal Si (Si1, Si2, Si3, Si4) = (1, 7, 3, 2) using formula (5), the decoded detection signal Sid (Si1d, Si2d, Si3d, Si4d) = (4, 28, 12, 8) can be obtained. The signal strength of the decoded detection signal Sid becomes 4 times that of the detection signal Si. That is, it is possible to obtain a signal strength 4 times that of the time-division selection drive without increasing the voltage of the drive signal Vs. Therefore, even when noise invades from the outside, the noise resistance of the detection device 100 can be improved by enhancing the signal strength.

[0158] Next, a description will be given of a case where code selection driving is performed on a plurality of detection electrode blocks RxB(1), RxB(1+1), RxB(1+2), and RxB(1+3). Fig.14A , Fig. 14B FIG. 2 is a diagram showing a selection form of detection electrodes by negative code selective driving for a plurality of detection electrode blocks. Fig.14A (A) is a diagram showing the first selection form in the negative code selection operation Tdm1. Fig.14A (B) is a diagram showing the second selection form in the negative code selection operation Tdm1. Fig.14A (C) is a diagram showing the third selection form in the negative code selection operation Tdm1. Fig.14A (D) is a diagram showing a fourth selection form in the negative code selection operation Tdm1. Fig. 14B (E) is a diagram showing the selection form in the reference code selection operation Tdb. Fig. 14B (F) is a diagram showing the selection form in the negative code selection operation Tdm2. Fig. 14B (G) is a diagram showing the selection form in the negative code selection operation Tdm3. Fig. 14B (H) is a diagram showing the selection form in the negative code selection operation Tdm4.

[0159] like Fig.13 and Fig.14A , Fig. 14B As shown, in the detection device 100 of embodiment 2, when the first selection circuit 14 makes the detection electrode Rx connected in any one of the selection forms Cpm and Cpb according to the selection signal Vgclm or the selection signal Vgclb from the first control circuit 114, the second selection circuit 15 selects the data line SGL connected to the detection circuit 40 in sequence according to the signal from the second control circuit 115.

[0160] The detection device 100 of the second embodiment performs a negative code selection operation Tdm1 as the detection operation Td1. Specifically, the first selection circuit 14 provides a scanning signal corresponding to the selection form Cpm1 to the scanning line GCL based on the selection signal Vgclm from the first control circuit 114. Fig.14A As shown in (A), the second selection circuit 15 connects the data line SGL(l) to the detection circuit 40 according to the selection signal Vsel from the second control signal 115, and outputs the detection signal Svm1 from the detection electrode block RxB(l) to the detection circuit 40. Fig.14A (B) Fig.14A (C) Fig.14AAs shown in (D), the second selection circuit 15 connects the data lines SGL(l+1), SGL(l+2), and SGL(l+3) to the detection circuit 40 in sequence, and outputs the detection signal Svm1 from the detection electrode blocks RxB(l+1), RxB(l+2), and RxB(l+3) to the detection circuit 40.

[0161] Next, the detection device 100 of the second embodiment performs the negative code selection operation Tdm2 as the detection operation Td2. Specifically, the first selection circuit 14 provides a scanning signal corresponding to the selection form Cpm2 to the scanning line GCL based on the selection signal Vgclm from the first control circuit 114. Fig. 14B As shown in (E), the second selection circuit 15 connects the data line SGL(l) to the detection circuit 40 according to the selection signal Vsel from the second control signal 115, and outputs the detection signal Svm2 from the detection electrode block RxB(l) to the detection circuit 40. Similarly, the second selection circuit 15 connects the data lines SGL(l+1), SGL(l+2), and SGL(l+3) to the detection circuit 40 in sequence, and outputs the detection signal Svm2 from the detection electrode blocks RxB(l+1), RxB(l+2), and RxB(l+3) to the detection circuit 40.

[0162] Next, the detection device 100 of the second embodiment performs a negative code selection operation Tdm3 as the detection operation Td3. Specifically, the first selection circuit 14 provides a scanning signal corresponding to the selection form Cpm3 to the scanning line GCL based on the selection signal Vgclm from the first control circuit 114, such as Fig. 14B As described in (F), the second selection circuit 15 connects the data line SGL(l) to the detection circuit 40 according to the selection signal Vsel from the second control signal 115, and outputs the detection signal Svm3 from the detection electrode block RxB(l) to the detection circuit 40. Similarly, the second selection circuit 15 connects the data lines SGL(l+1), SGL(l+2), and SGL(l+3) to the detection circuit 40 in sequence, and outputs the detection signal Svm3 from the detection electrode blocks RxB(l+1), RxB(l+2), and RxB(l+3) to the detection circuit 40.

[0163] Next, the detection device 100 of the second embodiment performs a negative code selection operation Tdm4 as the detection operation Td4. Specifically, the first selection circuit 14 provides a scanning signal corresponding to the selection form Cpm4 to the scanning line GCL based on the selection signal Vgclm from the first control circuit 114. Fig. 14BAs shown in (G), the second selection circuit 15 connects the data line SGL(l) to the detection circuit 40 according to the selection signal Vsel from the second control signal 115, and outputs the detection signal Svm4 from the detection electrode block RxB(l) to the detection circuit 40. Similarly, the second selection circuit 15 connects the data lines SGL(l+1), SGL(l+2), and SGL(l+3) to the detection circuit 40 in sequence, and outputs the detection signal Svm4 from the detection electrode blocks RxB(l+1), RxB(l+2), and RxB(l+3) to the detection circuit 40.

[0164] Furthermore, the detection device 100 performs the reference selection operation Tdb as the detection operation Td5. Specifically, the first selection circuit 14 provides a scanning signal corresponding to the selection form Cpb to the scanning line GCL based on the selection signal Vgclb from the first control circuit 114. Fig. 14B As shown in (H), the second selection circuit 15 connects the data line SGL(l) to the detection circuit 40 according to the signal from the second control signal 115, and outputs the detection signal Svb from the detection electrode block RxB(l) to the detection circuit 40. Similarly, the second selection circuit 15 connects the data lines SGL(l+1), SGL(l+2), and SGL(l+3) to the detection circuit 40 in sequence, and outputs the detection signal Svb from the detection electrode blocks RxB(l+1), RxB(l+2), and RxB(l+3) to the detection circuit 40.

[0165] The signal operation circuit 44 of the detection circuit 40 generates the detection signal Svc (Svc1, Svc2, Svc3, Svc4) based on the obtained detection signal Svm (Svm1, Svm2, Svm3, Svm4) and the detection signal Svb based on the formula (6). In addition, the detection signal Svc is decoded based on the formula (5) to generate the detection signal Sid (Si1d, Si2d, Si3d, Si4d). The detection circuit 40 outputs the output signal Vout based on the detection signal Sid (Si1d, Si2d, Si3d, Si4d).

[0166] As described above, according to Embodiment 2, the detection signal Sid (detection signals Si1d, Si2d, Si3d, Si4d) of each detection electrode Rx included in the detection electrode block RxB is obtained from the detection signal Svm and the detection signal Svb, which are obtained by only one negative code selection operation Tdm of two code selection operations based on a predetermined code, namely, the positive code selection operation Tdp and the negative code selection operation Tdm, and the reference selection operation Tdb. Therefore, compared with the case where both the positive code selection operation Tdp and the negative code selection operation Tdm are performed, the detection signal Sid of each detection electrode Rx included in each detection electrode block RxB can be output in a less selection form.

[0167] (Variation 1 of Implementation Method 2)

[0168] Fig.15 1 is a diagram showing a driving waveform corresponding to the variation 1 of the second embodiment. It should be noted that the same matters as those of the first embodiment will not be described in detail. In the second embodiment, the reference selection operation Tdb is performed after the negative code selection operation Tdm, but the present invention is not limited thereto. For example, Fig.15 As shown, the reference selection operation Tdb may be performed before the negative code selection operation Tdm. In addition, the negative code selection operation Tdm1 is a selection form Cpm1 that disconnects all the detection electrodes Rx included in the detection electrode block RxB from the data line SGL. Therefore, the detection signal Svm1 in the selection form Cpm1 can be regarded as 0. Therefore, Fig.15 As shown, the negative code selection operation Tdm1 may not be performed.

[0169] In summary, by performing the reference code selection operation Tdb instead of the negative code selection operation Tdm1 , the detection signal Sid can be obtained through the detection operation Td performed the same number of times as that of the first embodiment.

[0170] (Variation 2 of Implementation Example 2)

[0171] In implementation mode 2, Fig.13 As shown in the figure, the case where the switch elements SW2 of the second selection circuit 15 are sequentially selected in a state where the first selection circuit 14 connects the detection electrode blocks RxB to the data lines SGL in the same selection pattern Cpp is described, but the driving order is not limited to this. Fig.16 2 is a diagram showing a driving waveform corresponding to Modification 2 of Embodiment 2. It should be noted that matters similar to those in Embodiment 2 will not be described in detail.

[0172] In the second modification of the second embodiment, the first control circuit 114 and the first selection circuit 14 continuously perform the reference selection operation Tdb and the negative code selection operations Tdm2, Tdm3, and Tdm4 in a state where the switch element SW2(1) of the second selection circuit 15 is connected to the detection circuit 40 based on the selection signal Vsel from the second control circuit 115 to the switch control line SWL(1). Next, the first control circuit 114 and the first selection circuit 14 continuously perform the reference selection operation Tdb and the negative code selection operations Tdm2, Tdm3, and Tdm4 in a state where the switch element SW2(1+1) of the second selection circuit 15 is connected to the detection circuit 40 based on the selection signal Vsel from the second control circuit 115 to the switch control line SWL(1+1). Similarly, when the switch elements SW2(1+2) and SW2(1+3) of the second selection circuit 15 are connected to the detection circuit 40, the first control circuit 114 and the first selection circuit 14 continuously perform the reference selection operation Tdb and the negative code selection operations Tdm2, Tdm3, and Tdm4. In other words, the detection device 100 performs the operation with Fig. 14B After the same detection operation as (H), perform Fig. 14B (E), Fig. 14B (F) Fig. 14B The same detection operation as (G) is performed, and after connecting the switch element SW2(l+1) to the detection circuit 40, a reference selection operation Tdb is performed, and then, the same detection operation as (G) is performed. Fig.14A (B) Same detection operation.

[0173] As shown in equations (6) and (5), in order to detect the detection signal Sc and the decoded detection signal Sid, it is necessary to obtain all the detection signals Svm (Svm2, Svm3, Svm4) and the detection signal Svb except the detection signal Svm1 which can be regarded as 0. According to variation 2 of implementation mode 2, after the detection signals Svm2, Svm3, Svm4 and the detection signal Svb based on the negative code selection operation Tdm2, Tdm3, Tdm4 and the reference selection operation Tdb are obtained for one detection electrode block RxB, the reference selection operation Tdb and the negative code selection operation Tdm of the next detection electrode block RxB are started. Therefore, the signal operation circuit 44 can perform the operation processing shown in equations (6) and (5) at the stage after the required reference selection operation Tdb and the negative code selection operation Tdm are completed for one detection electrode block RxB, without waiting for the reference selection operation Tdb and the negative code selection operation Tdm of other detection electrode blocks RxB to be completed. Therefore, the signal operation circuit 44 can perform the operation processing on the previous detection electrode block RxB in parallel with the operation of executing the reference selection operation Tdb and the negative code selection operation Tdm of another detection electrode block RxB to obtain the detection signal Svm and the detection signal Svb, thereby shortening the time required to output the output signal Vout.

[0174] In addition, after executing the calculation processing shown in equations (6) and (5), there is no need to maintain the detection signal Svm and the detection signal Svb in the storage circuit 48. Therefore, compared with the case where all detection signals Svm and detection signals Svb are maintained for all detection electrode blocks RxB, the amount of data that needs to be maintained in the storage circuit 48 can be reduced.

[0175] (Implementation 3)

[0176] In Embodiment 1 and Embodiment 2, the case where only one of the positive code selection operation Tdp and the negative code selection operation Tdm is performed is described, but it is not limited to this. There may be a first mode in which one of Embodiment 1 or Embodiment 2 is performed, and a second mode in which both the positive code selection operation Tdp and the negative code selection operation Tdm are performed. It should be noted that the same description as in Embodiment 1 and Embodiment 2 will be omitted.

[0177] In the second mode, the first control circuit 114 outputs a selection signal Vgclp and a selection signal Vgclm to the first selection circuit 14, and the first selection circuit 14 connects the detection electrode Rx contained in the detection electrode block RxB to the data line SGL according to the selection form Cpp and the selection form Cpm. The second selection circuit connects the data line SGL to the detection circuit 40 according to the signal from the second control circuit 115. In this way, the detection circuit 40 obtains the detection signal Svp (Svp1, Svp2, Svp3, Svp4) and the detection signal Svm (Svm1, Svm2, Svm3, Svm4). As shown in formula (7), the signal operation circuit 44 of the detection circuit 40 generates a detection signal Svc by subtracting the detection signal Svm from the detection signal Svp, and generates a detection signal Sid by decoding based on formula (5).

[0178] Compared with the first mode, the second mode performs both the positive code selection operation Tdp and the negative code selection operation Tdm. Therefore, although the detection time is consumed, the S / N ratio is reduced due to the increase in the number of sampling times. Therefore, the detection circuit 40 can further have a noise detection circuit to calculate the noise amount (for example, S / N ratio) of the detection signal Sid obtained in the first mode, and when the noise amount exceeds a certain threshold, a switching signal for switching from the first mode to the second mode is output to the detection control circuit 11. In this way, the detection device 100 can detect a signal with a lower noise amount in the second mode in an environment where noise is mixed in the signal, and output the detection result more quickly in the first mode in an environment where noise is not easily mixed in the signal.

[0179] (Implementation 4)

[0180] In Embodiments 1 and 2, an operation example when the fingerprint detection application code is selected and driven for the Y direction (second direction) is described. In Embodiment 4, an operation example when the fingerprint detection application code is selected and driven for the X direction (first direction) and the Y direction (second direction) is described. In this embodiment, in order to distinguish the detection electrode block RxB from the second detection electrode block BKNB described later, the detection electrode block RxB is referred to as the first detection electrode block RxB.

[0181] Below, take the case of performing the positive code selection operation Tdp as an example, refer to Figures 17A to 20B Provide explanation. Fig.17A and Fig. 17B This is an explanatory diagram for explaining an example of a selection form of a second selection circuit in a state where a first selection circuit selects a detection electrode in a first selection form in Embodiment 4. Fig.18A and Fig.18BThis is an explanatory diagram for explaining an example of the selection form of the second selection circuit in a state where the first selection circuit selects the detection electrode in the second selection form in the fourth embodiment. Fig.19A and Fig.19B This is an explanatory diagram for explaining an example of the selection form of the second selection circuit in a state where the first selection circuit selects the detection electrode in the third selection form in the fourth embodiment. Fig. 20A and Fig. 20B This is an explanatory diagram for explaining an example of the selection form of the second selection circuit in a state where the first selection circuit selects the detection electrode in the fourth selection form in the fourth embodiment.

[0182] In Embodiment 4, the second selection circuit 15 includes a switch element SW2a and a switch element SW2b. In addition, the detection circuit 40 includes a first detection circuit DET1 and a second detection circuit DET2. One end of one switch element SW2a and one switch element SW2b are connected to the same data line SGL, the other end of the switch element SW2a is connected to the first detection circuit DET1, and the other end of the switch element SW2b is connected to the second detection circuit DET2. The switch element SW2a and the switch element SW2b are connected to the same switch control line SWL. If a first voltage is applied to the switch control line SWL, the switch element SW2a connects the data line SGL and the first detection circuit DET1, and the switch element SW2b disconnects the data line SGL and the second detection circuit DET2. In addition, if a second voltage different from the first voltage is applied to the switch control line SWL, the switch element SW2a disconnects the data line SGL and the first detection circuit DET1, and the switch element SW2b connects the data line SGL and the second detection circuit DET2. For example, the data line SGL(l) is connected to one end of the switch element SW2a(l) and the switch element SW2b(l), the other end of the switch element SW2a(l) is connected to the first detection circuit DET1, and the other end of the switch element SW2b(l) is connected to the second detection circuit DET2.

[0183] In addition, the other end of the switch element SW2a connected to the detection electrode Rx included in the second detection electrode block BKNB is connected to the first detection circuit DET1 via a common connection. For example, the other ends of the switch elements SW2a(l), SW2a(l+1), SW2a(l+2), and SW2a(l+3) are connected to the first detection circuit DET1 via the same common connection. Moreover, the other end of the switch element SW2b connected to the detection electrode Rx included in the second detection electrode block BKNB is connected to the second detection circuit DET2 via a common connection. For example, the other ends of the switch elements SW2b(l), SW2b(l+1), SW2b(l+2), and SW2b(l+3) are connected to the second detection circuit DET2 via the same common connection.

[0184] Fig.17A (A) shows the first detection operation in Embodiment 4, Fig.17A (B) shows the second detection operation in Embodiment 4, Fig. 17B (C) shows the third detection operation in Embodiment 4, Fig. 17B (D) shows the fourth detection operation in Embodiment 4. Fig.17A (A)~ Fig. 17B As shown in (D), in the first detection operation Tep11, the second detection operation Tep12, the third detection operation Tep13, and the fourth detection operation Tep14, the first selection circuit 14 performs the positive code selection operation Tdp1 based on the selection signal Vgclp from the first control circuit 114. Specifically, corresponding to the component "1" of the first row of the square matrix Hv shown in formula (2), the detection electrodes Rx belonging to the second detection electrode blocks BKNB(k), BKNB(k+1), BKNB(k+2), and BKNB(k+3) are selected as the detection electrodes Rx of the first selection object of the square matrix Hv.

[0185] It should be noted that the detection electrode Rx of the second detection electrode block BKNB(k) is the detection electrode Rx connected to the scan line GCL(k). The detection electrode Rx of the second detection electrode block BKNB(k+1) is the detection electrode Rx connected to the scan line GCL(k+1). The detection electrode Rx of the second detection electrode block BKNB(k+2) is the detection electrode Rx connected to the scan line GCL(k+2). The detection electrode Rx of the second detection electrode block BKNB(k+3) is the detection electrode Rx connected to the scan line GCL(k+3).

[0186]

Mathematical formula 7

[0187]

[0188] In addition, if Fig.17AAs shown in (A), the second selection circuit 15 performs the positive code selection operation Tdp and the negative code selection operation Tdm in the X direction (first direction) at the same time. In the first detection operation Tep11, the second selection circuit 15 selects the detection electrodes Rx belonging to the first detection electrode blocks RxB(l), RxB(l+1), RxB(l+2), and RxB(l+3) as the detection electrodes Rx of the first selection object of the square matrix Hh corresponding to the component "1" of the first column of the square matrix Hh shown in the above formula (8), and the selected detection electrodes Rx are connected to the first detection circuit DET1 via the second selection circuit 15. Since "-1" does not exist in the components of the first column of the square matrix Hh, the detection electrode Rx is not selected as the second selection object of the square matrix Hh corresponding to the component "-1".

[0189] The square matrix Hh of the above formula (8) is a Hadamard matrix, which is a square matrix with "1" or "-1" as an element, and any two different rows constitute an orthogonal matrix. The order t of the square matrix Hh is a value greater than the number u of detection electrodes Rx contained in the second detection electrode block BKNB(k). In embodiment 4, the order t is 4, which is the same as the number u of detection electrodes Rx contained in the second detection electrode block BKNB.

[0190] The signal obtained by integrating the detection signals of each detection electrode Rx is used as the detection signal Svpp. 11 The detection signal Svpm of the second detection circuit DET2 is output to the first detection circuit DET1. 11 Svpm 11 = 0. The detection circuit 40 calculates the detection signal Scp from the difference between them. 11 =Svpp 11 -Svpm 11 .

[0191] like Fig.17A As shown in (B), in the second detection operation Tep12, the second selection circuit 15 selects the detection electrodes Rx of the first detection electrode blocks RxB(l) and RxB(l+2) as the first selection objects of the square matrix Hh corresponding to the component "1" of the second column of the square matrix Hh. In addition, the detection electrodes Rx of the first detection electrode blocks RxB(l+1) and RxB(l+3) are selected as the second selection objects of the square matrix Hh corresponding to the component "-1" of the second column of the square matrix Hh. Fig.17A In the second detection operation Tep12 shown in (B), the detection signal Scp is calculated. 12 =Svpp 12 -Svpm 12 .

[0192] like Fig. 17BAs shown in (C), in the third detection operation Tep13, the second selection circuit 15 selects the detection electrodes Rx of the first detection electrode blocks RxB(l) and RxB(l+1) as the first selection objects of the square matrix Hh corresponding to the component "1" of the third column of the square matrix Hh. In addition, the detection electrodes Rx of the first detection electrode blocks RxB(l+2) and RxB(l+3) are selected as the second selection objects of the square matrix Hh corresponding to the component "-1" of the third column of the square matrix Hh. Fig. 17B In the third detection operation Tep13 shown in (C), the detection signal Scp is calculated. 13 =Svpp 13 -Svpm 13 .

[0193] like Fig. 17B As shown in (D), in the fourth detection operation Tep14, the second selection circuit 15 selects the detection electrodes Rx of the first detection electrode blocks RxB(l) and RxB(l+3) as the first selection objects of the square matrix Hh corresponding to the component "1" of the 4th column of the square matrix Hh. In addition, the detection electrodes Rx of the first detection electrode blocks RxB(l+1) and RxB(l+2) are selected as the second selection objects of the square matrix Hh corresponding to the component "-1" of the 4th column of the square matrix Hh. Fig. 17B In the fourth detection operation Tep14 shown in (D), the detection signal Scp is calculated. 14 =Svpp 14 -Svpm 14 .

[0194] Fig.18A (A) shows the fifth detection operation in Embodiment 4, Fig.18A (B) shows the sixth detection operation in Embodiment 4, Fig.18B (C) shows the seventh detection operation in Embodiment 4, Fig.18B (D) shows the eighth detection operation in Embodiment 4. Fig.18A (A)~ Fig.18B As shown in (D), in the fifth detection operation Tep21, the sixth detection operation Tep22, the seventh detection operation Tep23, and the eighth detection operation Tep24, the first selection circuit 14 performs the positive code selection operation Tdp2 based on the selection signal Vgclp from the first control circuit 114. Specifically, corresponding to the component "1" of the second row of the square matrix Hv shown in formula (2), the detection electrode Rx belonging to the second detection electrode block BKNB(k) and BKNB(k+2) is selected as the detection electrode Rx of the first selection object, and the detection electrode Rx belonging to the second detection electrode block BKNB(k+1) and BKNB(k+3) is selected as the detection electrode Rx of the second selection object.

[0195] exist Fig.18A In the fifth detection operation Tep21 shown in (A), the second selection circuit 15 selects the detection electrodes Rx belonging to the first detection electrode block RxB(l), RxB(l+1), RxB(l+2), and RxB(l+3) as the first selected detection electrodes Rx of the matrix Hh in correspondence with the component "1" of the first column of the matrix Hh. Fig.18A In the fifth detection operation Tep21 shown in (A), the detection signal Scp is calculated. 21 =Svpp 21 -Svpm 21 .

[0196] exist Fig.18A In the sixth detection operation Tep22 shown in (B), the second selection circuit 15 selects the detection electrodes Rx of the first detection electrode blocks RxB(l) and RxB(l+2) as the first selection objects of the square matrix Hh corresponding to the component "1" of the second column of the square matrix Hh. In addition, the detection electrodes Rx of the first detection electrode blocks RxB(l+1) and RxB(l+3) are selected as the second selection objects of the square matrix Hh corresponding to the component "-1" of the second column of the square matrix Hh. Fig.18A In the sixth detection operation Tep22 shown in (B), the detection signal Scp is calculated. 22 =Svpp 22 -Svpm 22 .

[0197] exist Fig.18B In the seventh detection operation Tep23 shown in (C), the second selection circuit 15 selects the detection electrodes Rx of the first detection electrode blocks RxB(l) and RxB(l+1) as the first selection objects of the square matrix Hh corresponding to the component "1" of the third column of the square matrix Hh. In addition, the detection electrodes Rx of the first detection electrode blocks RxB(l+2) and RxB(l+3) are selected as the second selection objects of the square matrix Hh corresponding to the component "-1" of the third column of the square matrix Hh. Fig.18B In the seventh detection operation Tep23 shown in (C), the detection signal Scp is calculated. 23 =Svpp 23 -Svpm 23 .

[0198] exist Fig.18BIn the eighth detection operation Tep24 shown in (D), the second selection circuit 15 selects the detection electrodes Rx of the first detection electrode blocks RxB(l) and RxB(l+3) as the first selection objects of the square matrix Hh corresponding to the component "1" of the 4th column of the square matrix Hh. In addition, the detection electrodes Rx of the first detection electrode blocks RxB(l+1) and RxB(l+2) are selected as the second selection objects of the square matrix Hh corresponding to the component "-1" of the 4th column of the square matrix Hh. Fig.18B In the eighth detection operation Tep24 shown in (D), the detection signal Scp is calculated. 24 =Svpp 24 -Svpm 24 .

[0199] Fig.19A (A) shows the ninth detection operation in Embodiment 4, Fig.19A (B) shows the tenth detection operation in Embodiment 4, Fig.19B (C) shows the eleventh detection operation in Embodiment 4, Fig.19B (D) shows the twelfth detection operation in Embodiment 4. Fig.19A (A)~ Fig.19B As shown in (D), in the ninth detection operation Tep31, the tenth detection operation Tep32, the eleventh detection operation Tep33, and the twelfth detection operation Tep34, the first selection circuit 14 performs the positive code selection operation Tdp3 based on the selection signal Vgclp from the first control circuit 114. Specifically, corresponding to the component "1" of the third row of the square matrix Hv shown in formula (2), the detection electrode Rx belonging to the second detection electrode block BKNB (k), BKNB (k+1) is selected as the detection electrode Rx of the first selection object, and the detection electrode Rx belonging to the second detection electrode block BKNB (k+2), BKNB (k+3) is selected as the detection electrode Rx of the second selection object.

[0200] exist Fig.19A In the ninth detection operation Tep31 shown in (A), the second selection circuit 15 selects the detection electrodes Rx belonging to the first detection electrode block RxB(l), RxB(l+1), RxB(l+2), and RxB(l+3) as the first selected detection electrodes Rx of the matrix Hh in correspondence with the component "1" of the first column of the matrix Hh. Fig.19A In the ninth detection operation Tep31 shown in (A), the detection signal Scp is calculated. 31 =Svpp 31 -Svpm 31 .

[0201] exist Fig.19AIn the tenth detection operation Tep32 shown in (B), the second selection circuit 15 selects the detection electrodes Rx of the first detection electrode blocks RxB(l) and RxB(l+2) as the first selection objects of the square matrix Hh corresponding to the component "1" of the second column of the square matrix Hh. In addition, the detection electrodes Rx of the first detection electrode blocks RxB(l+1) and RxB(l+3) are selected as the second selection objects of the square matrix Hh corresponding to the component "-1" of the second column of the square matrix Hh. Fig.19A In the tenth detection operation Tep32 shown in (B), the detection signal Scp is calculated. 32 =Svpp 32 -Svpm 32 .

[0202] exist Fig.19B In the eleventh detection operation Tep33 shown in (C), the second selection circuit 15 selects the detection electrodes Rx of the first detection electrode blocks RxB(l) and RxB(l+1) as the first selection objects of the square matrix Hh corresponding to the component "1" of the third column of the square matrix Hh. In addition, the detection electrodes Rx of the first detection electrode blocks RxB(l+2) and RxB(l+3) are selected as the second selection objects of the square matrix Hh corresponding to the component "-1" of the third column of the square matrix Hh. Fig.19B In the eleventh detection operation Tep33 shown in (C), the detection signal Scp is calculated. 33 =Svpp 33 -Svpm 33 .

[0203] exist Fig.19B In the twelfth detection operation Tep34 shown in (D), the second selection circuit 15 selects the detection electrodes Rx of the first detection electrode blocks RxB(l) and RxB(l+3) as the first selection objects of the square matrix Hh corresponding to the component "1" of the 4th column of the square matrix Hh. In addition, the detection electrodes Rx of the first detection electrode blocks RxB(l+1) and RxB(l+2) are selected as the second selection objects of the square matrix Hh corresponding to the component "-1" of the 4th column of the square matrix Hh. Fig.19B In the twelfth detection operation Tep34 shown in (D), the detection signal Scp is calculated. 34 =Svpp 34 -Svpm 34 .

[0204] Fig. 20A (A) shows the thirteenth detection operation in Embodiment 4, Fig. 20A (B) shows the fourteenth detection operation in Embodiment 4, Fig. 20B (C) shows the fifteenth detection operation in Embodiment 4, Fig. 20B(D) shows the sixteenth detection operation in Embodiment 4. Fig. 20A (A)~ Fig. 20B As shown in (D), in the thirteenth detection operation Tep41, the fourteenth detection operation Tep42, the fifteenth detection operation Tep43, and the sixteenth detection operation Tep44, the first selection circuit 14 performs the positive code selection operation Tdp4 based on the selection signal Vgclp from the first control circuit 114. Specifically, corresponding to the component "1" of the fourth row of the square matrix Hv shown in formula (2), the detection electrode Rx belonging to the second detection electrode block BKNB (k), BKNB (k+3) is selected as the detection electrode Rx of the first selection object, and the detection electrode Rx belonging to the second detection electrode block BKNB (k+1), BKNB (k+2) is selected as the detection electrode Rx of the second selection object.

[0205] exist Fig. 20A In the thirteenth detection operation Tep41 shown in (A), the second selection circuit 15 selects the detection electrodes Rx belonging to the first detection electrode block RxB(l), RxB(l+1), RxB(l+2), and RxB(l+3) as the first selected detection electrodes Rx of the matrix Hh in correspondence with the component "1" of the first column of the matrix Hh. Fig. 20A In the thirteenth detection operation Tep41 shown in (A), the detection signal Scp is calculated. 41 =Svpp 41 -Svpm 41 .

[0206] exist Fig. 20A In the fourteenth detection operation Tep42 shown in (B), the second selection circuit 15 selects the detection electrodes Rx of the first detection electrode blocks RxB(l) and RxB(l+2) as the first selection objects of the square matrix Hh corresponding to the component "1" of the second column of the square matrix Hh. In addition, the detection electrodes Rx of the first detection electrode blocks RxB(l+1) and RxB(l+3) are selected as the second selection objects of the square matrix Hh corresponding to the component "-1" of the second column of the square matrix Hh. Fig. 20A In the fourteenth detection operation Tep42 shown in (B), the detection signal Scp is calculated. 42 =Svpp 42 -Svpm 42 .

[0207] exist Fig. 20BIn the fifteenth detection operation Tep43 shown in (C), the second selection circuit 15 selects the detection electrodes Rx of the first detection electrode blocks RxB(l) and RxB(l+1) as the first selection objects of the square matrix Hh corresponding to the component "1" of the third column of the square matrix Hh. In addition, the detection electrodes Rx of the first detection electrode blocks RxB(l+2) and RxB(l+3) are selected as the second selection objects of the square matrix Hh corresponding to the component "-1" of the third column of the square matrix Hh. Fig. 20B In the fifteenth detection operation Tep43 shown in (C), the detection signal Scp is calculated. 43 =Svpp 43 -Svpm 43 .

[0208] exist Fig. 20B In the sixteenth detection operation Tep44 shown in (D), the second selection circuit 15 selects the detection electrodes Rx of the first detection electrode blocks RxB(l) and RxB(l+3) as the first selection objects of the square matrix Hh corresponding to the component "1" of the 4th column of the square matrix Hh. In addition, the detection electrodes Rx of the first detection electrode blocks RxB(l+1) and RxB(l+2) are selected as the second selection objects of the square matrix Hh corresponding to the component "-1" of the 4th column of the square matrix Hh. Fig. 20B In the sixteenth detection operation Tep44 shown in (D), the detection signal Scp is calculated. 44 =Svpp 44 -Svpm 44 .

[0209] As described above, the signal operation circuit 44 calculates the data of 16 detection signals Scp through the first detection operation to the sixteenth detection operation. The data of the detection signal Scp is stored in the storage circuit 48. Here, it is assumed that the matrix composed of the detection signal Si of each detection electrode Rx included in the n first detection electrode blocks RxB and the u second detection electrode blocks BKNB is Si nu X, if the code selection drive is performed in the column direction through the square matrix Hv, and the code selection drive is performed in the row direction through the square matrix Hh, then the matrix ScX composed of the detection signal Sc shown in formula (9) can be obtained. The signal operation circuit 44 receives the data of the detection signal Scp from the storage circuit 48, and performs decoding processing based on formula (10), thereby obtaining the value obtained by multiplying the detection signal Svp by the order t of the square matrix Hh. For example, the detection signal Scp 11 、Scp 12 、Scp 13 、Scp 14 Generate four detection signals Svp1×t(Svp 11 ×t、Svp 12 ×t、Svp13 ×t、Svp 14 × t). Here, the detection signal Svp 11 The detection signal Svp1 of the data line SGL(l) corresponds to the detection signal Svp 12 The detection signal Svp1 corresponds to the detection signal Svp1 of the data line SGL(l+1). 13 The detection signal Svp1 corresponds to the detection signal Svp1 of the data line SGL(1+2). 14 The signal operation circuit 44 generates four detection signals Svp×t (Svp1×t, Svp2×t, Svp3×t, Svp4×t) corresponding to the data line SGL(l+3). Similarly, the signal operation circuit 44 generates four Svp2×d, four Svp3×d, and four Svp4×d. In other words, the signal operation circuit 44 generates four detection signals Svp×t (Svp1×t, Svp2×t, Svp3×t, Svp4×t) corresponding to the data lines SGL(l). For example, the detection signal Svp corresponding to the data line SGL(l) is generated. 11 ×t、Svp 21 ×t、Svp 31 ×t、Svp 41 ×t.

[0210] ScX=Hv×Si nu X×Hh…(9)

[0211] Svp×t=ScpX×Hh…(10)

[0212] Similar to equation (4), the signal operation circuit 44 further generates the detection signal Sc×t based on equation (11). More specifically, the detection signal Sc×t is obtained by doubling the detection signal Svp×t corresponding to each data line SGL and then subtracting the detection signal Svp1×t. For example, based on the detection signal Svp corresponding to the data line SGL(l), 11 ×t、Svp 21 ×t、Svp 31 ×t、Svp 41 × t, and obtain four detection signals Sc 11 ×t、Sc 21 ×t、Sc 31 ×t、Sc 41 ×t. Detection signal Sc 11 ×t and detection signal Svp 11 ×t corresponds to the detection signal Sc 21 ×t and the detection signal Svp 21 ×t is doubled and the detection signal Svp is subtracted 11 The value obtained by ×t corresponds to the detection signal Sc 31 ×t and the detection signal Svp 31×t is doubled and the detection signal Svp is subtracted 11 The value obtained by ×t corresponds to the detection signal Sc 41 ×t and the detection signal Svp 41 ×t is doubled and the detection signal Svp is subtracted 11 ×t corresponds to the value obtained.

[0213] Sc×t=(2Svp-Svp1)×t…(11)

[0214] Then, similarly to the equation (5), the signal operation circuit 44 further decodes the detection signal Si×t×d from the detection signal Sc×t based on the equation (12). d corresponds to the order d of the square matrix Hv.

[0215] Si×t×d=Hv×Sc×t…(12)

[0216] Therefore, the signal operation circuit 44 can obtain a signal of a value obtained by multiplying a detection signal Si by t×d. Specifically, t and d are both 4, so that a detection signal Si multiplied by 16 can be obtained. The coordinate extraction circuit 45 can calculate the two-dimensional coordinates of the finger Fin or the like that is in contact or approaching based on the decoded signal Sid. In the fourth embodiment, the detection signal Scp obtained by integrating the detection signal Si of each detection electrode Rx is also decoded to obtain a signal strength 16 times that of the time-division selective drive without increasing the voltage of the signal value of each node.

[0217] (Variation 1 of Implementation Example 4)

[0218] In Embodiment 4, an example is given of a case where the first selection circuit 14 performs a positive code selection operation Tdp, and the second selection circuit 15 performs a positive code selection operation Tdp and a negative code selection operation Tdm, but the present invention is not limited thereto. For example, similarly to Modification 2 of Embodiment 2, the second selection circuit 15 may also perform a negative code selection operation Tdm, and similarly to Modification 3 of Embodiment 3, the second selection circuit 15 may also perform both a positive code selection operation Tdp and a negative code selection operation Tdm. In addition, the second selection circuit 15 may also have only one of the first detection circuit DET1 and the second detection circuit DET2, and similarly to Embodiments 1 and 2, only perform either the positive code selection operation Tdp or the negative code selection operation Tdm.

[0219] (Implementation method 5)

[0220] It should be noted that the specific composition of the detection device is not limited to the reference Figure 1 to Figure 4 , Figure 8 way.

[0221] Fig.21FIG. 5 is a diagram showing an example of the structure of a detection device in Embodiment 5. Fig.21 In the sensor unit 201 shown, in addition to the detection electrodes Tx and the conductor 26, the detection electrodes Sx are arranged in a matrix like the detection electrodes Rx, and are connected to the scanning lines GCL and the data lines SGL via the switch element SW1. The first selection circuit 214 has the same function as the first selection circuit 14. The second selection circuit 215 has the same function as the second selection circuit 15. The detection control circuit 211 has the same function as the detection control circuit 11.

[0222] exist Fig.21 In the structure shown, a connection L3, a plurality of switch elements SW3 and a connection L2 are provided between the second selection circuit 215 and the detection circuit 240. Fig.21 The structure shown in FIG. 1 is a structure in which the detection control circuit 211 supplies the drive signal Vs to the detection electrode Sx via the wiring L1 and the plurality of switch elements xSW3. Fig.21 In the illustrated configuration, the drive signal generation circuit 112 included in the detection control circuit 211 is connected to the detection electrode Sx provided in the sensor unit 201 and supplies the drive signal Vs.

[0223] The provision of the drive signal Vs and the output of the detection signal Sv can be switched by, for example, the switch elements SW3 and xSW3. When the switch element SW3 is turned off (disconnected state), the switch element xSW3 is turned on (connected state), and the drive signal Vs is provided to the detection electrode Sx of the selected object via the wiring L1 and the wiring L3 and via the second selection circuit 215 and the data line SGL. When the switch element SW3 is turned on (connected state), the switch element xSW3 is turned off (disconnected state), and the detection signal Sv from the detection electrode Sx of the selected object is output to the detection circuit 240 via the wiring L2 and the wiring L3. That is, the detection electrode Sx in Embodiment 5 is an electrode that has both the detection electrode Rx and the detection electrode Tx (drive electrode) in Embodiment 1.

[0224] It should be noted that the functions of the switch elements SW3, xSW3 and the wirings L1, L2, L3 may be included in the second selection circuit 215, or may be a circuit provided separately from the second selection circuit 215. The detection control circuit 211 may include the function of the drive signal generation circuit 112. The switch elements SW3, xSW3 and the wirings L1, L2, L3 are provided on, for example, the substrate 101.

[0225] (Implementation 6)

[0226] Fig. 22This is a diagram showing an example of the configuration of a detection device in Embodiment 6. The sensor unit 301 is configured so that the detection electrode Tx (driving electrode) is opposite to the plurality of detection electrodes Rx without being in contact with the detection electrodes Rx. In addition, the drive signal generating circuit 112 of the detection control circuit 311 is connected to the detection electrode Tx via the first selection circuit 314, and provides the drive signal Vs to the detection electrode Tx. In addition, the sensor unit 301 does not have a switching element SW1 connected to the detection electrode Tx in the detection area DA, and the detection electrode Tx and the first selection circuit 314 are connected in the surrounding area PA. In addition, the detection electrode Rx is connected to the data line SGL without being connected via the switching element SW1.

[0227] If the driving signal Vs is supplied to the detection electrode Tx, the proximity of the detection object such as the finger Fin to the detection electrode Rx will affect the mutual capacitance generated between the detection electrode Rx and the detection electrode Tx. Fig. 22 In the configuration shown, detection is performed based on whether or not the mutual capacitance that appears in the detection signal Vs changes and the degree of change. Fig. 22 In the structure shown, a plurality of detection electrodes Tx are arranged in parallel in a manner corresponding to the configuration of the detection electrode Rx in the Y direction. The detection electrode Tx can simultaneously drive the plurality of detection electrodes Rx. The plurality of detection electrodes Rx are arranged in parallel along the X direction with their length directions being arranged in parallel along the X direction. However, this is only an example of the method of the detection electrode Tx and is not limited to this. The shape and configuration of the detection electrode Tx can be appropriately changed.

[0228] exist Fig. 22 In the structure shown, the data line SGL connects the second selection circuit 315 and the detection electrode Rx. Fig. 22 In the configuration shown, the detection electrodes Rx arranged in parallel along the Y direction are selected by the first selection circuit 314 through the selection operation of the detection electrodes Tx supplied with the drive signal Vs. In other respects, the functions of the second selection circuit 315 and the detection circuit 340 are the same as those of the second selection circuit 15 and the detection circuit 40.

[0229] (Implementation 7)

[0230] In implementation mode 1, Figure 7 As shown in the figure, the shield layer 24 is arranged between the layer where the detection electrode Rx is formed and the layer where the switch element SW1 is formed, but the present invention is not limited to this. Fig.23 FIG. 1 is a plan view of a detection device 100A in Embodiment 7. Fig.23As shown, the shielding layer 124A is configured to overlap with the circuits formed on the substrate 101 such as the first selection circuit 14 and the second selection circuit 15 in a plan view. In addition, the shielding layer 124A is configured in a manner surrounding the periphery of the detection area DA. It should be noted that in Embodiment 7, the shielding layer 124A is configured in a manner surrounding the four sides of the quadrilateral detection area DA, but is not limited to this. The shielding layer 124A only needs to be configured in a manner overlapping with at least the circuits configured on the substrate 101, for example, it can be configured along the two sides of the detection area DA where the first selection circuit 14 and the second selection circuit 15 are configured.

[0231] The detection device may also be provided with no shielding layer 24, and the shielding layer 124A may be formed by using the same electrode layer as the detection electrode Rx, and formed to cover the switch element SSW included in the circuit formed on the substrate 101. The shielding layer 124A is formed of a transparent conductor, such as ITO. The switch element SSW is, for example, the switch element SW2 constituting the second selection circuit 15. It should be noted that in Embodiment 7, an example is given of a case where no shielding layer 24 is provided, but it is not limited to this. Fig.24 As shown, both the shield layer 124A and the shield layer 24 may be provided. Fig.24 It is a cross-sectional view of the detection device 100A when both the shield layer 124A and the shield layer 24 are arranged.

[0232] Above, the preferred embodiment of the present invention has been described, but the present invention is not limited to such an embodiment. The content disclosed in the embodiment is only an example, and various changes can be made within the scope of the gist of the present invention. The appropriate changes made within the scope of the gist of the present invention certainly also belong to the technical scope of the present invention.

Claims

1. A detection device, characterized in that: have: a plurality of detection electrodes; a detection circuit connected to the detection electrode and detecting a detection signal corresponding to a change in capacitance of the detection electrode; as well as A connecting circuit is provided to connect or disconnect the detection electrode and the detection circuit, wherein: The detection device has a plurality of selection forms for the detection electrodes, wherein the selection forms cause a detection electrode of a first selection object among the plurality of detection electrodes to be in a connected state connected to the detection circuit, and cause a detection electrode of a second selection object not included in the first selection object to be in a disconnected state not connected to the detection circuit, The plurality of selection modes do not include a selection mode in which the detection electrode of the first selection object is in the disconnected state and the detection electrode of the second selection object is in the connected state. The detection electrodes are arranged in parallel along a first direction and a second direction intersecting the first direction. The detection signal can be obtained based on one of the plurality of selection forms, The detection device detects contact or approach of an object based on the detection signal obtained based on the one selection form.

2. The detection device according to claim 1, wherein: The connection circuit implements only one of a first selection form and a second selection form, wherein the first selection form sets the first selection object to the connected state and sets the second selection object to the disconnected state, and the second selection form sets the first selection object of the first selection form to the disconnected state and sets the second selection object of the first selection form to the connected state.

3. The detection device according to claim 1 or 2, wherein: The detection device further comprises: a driving electrode, arranged adjacent to the detection electrode; and The drive signal generating circuit is connected to the drive electrode and supplies a drive signal to the transmission conductor.

4. The detection device according to claim 3, wherein: The plurality of detection electrodes are provided on one surface of the insulating substrate. The height of the transmitting conductor from the one surface is higher than the height of the detecting electrode from the one surface.

5. The detection device according to claim 1 or 2, wherein: The detection device further comprises: a driving electrode facing the plurality of detection electrodes in a non-contact state; and The driving signal generating circuit is connected to the driving electrode and provides a driving signal to the driving electrode.

6. The detection device according to claim 1 or 2, wherein: The detection device further comprises: The driving signal generating circuit is connected to the detection electrode and supplies a driving signal to the detection electrode.

7. The detection device according to claim 1 or 2, wherein: The connection circuit determines the selection form based on a sign or negative code of a Hadamard matrix.

8. The detection device according to claim 1 or 2, wherein: The detection device comprises: The calculation circuit subtracts the subtraction signal in which all of the plurality of detection electrodes are the first selection objects from the doubled signal obtained by doubling the signal strength of one of the selection patterns.

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