Power consumption measurement system and method

Abstract

Provided are a power consumption measurement system and a method thereof. The provided power consumption measurement system comprises a switch, a resistor with a specified resistance value, and a power management integrated circuit; an input end of the switch is coupled to a pin that provides power for an electronic device; an output end of the switch is coupled to a power input pin of the power management integrated circuit; the power management integrated circuit is further coupled to a control end of the switch; and the power management integrated circuit is further coupled to the power input pin to obtain a first voltage of the input end of the switch and a second voltage of the power input pin.

Description

TECHNICAL FIELD

[0001] The present application relates to a power consumption measurement system, and more particularly, to a power consumption measurement system for electronic devices. BACKGROUND

[0002] Figure 1 A block diagram of a storage device is shown. The storage device 102 is coupled to a host to provide storage capabilities for the host. The host and the storage device 102 can be coupled in a variety of ways, including but not limited to, through a connection such as SATA (Serial Advanced Technology Attachment), SCSI (Small Computer System Interface), SAS (Serial Attached SCSI), IDE (Integrated Drive Electronics), USB (Universal Serial Bus), PCIE (Peripheral Component Interconnect Express), NVMe (NVM Express), Ethernet, Fibre Channel, wireless communication network, etc. The host can be an information processing device capable of communicating with the storage device through the above-mentioned ways, such as a personal computer, a tablet computer, a server, a laptop computer, a network switch, a router, a cellular phone, a personal digital assistant, etc. The storage device 102 includes an interface 103, a control component 104, one or more NVM chips 105, and a DRAM (Dynamic Random Access Memory) 110.

[0003] NAND flash memory, phase change memory, FeRAM (Ferroelectric RAM), MRAM (Magnetic Random Access Memory), RRAM (Resistive Random Access Memory), etc. are common NVMs.

[0004] The interface 103 can be adapted to exchange data with the host through, for example, SATA, IDE, USB, PCIE, NVMe, SAS, Ethernet, Fibre Channel, etc.

[0005] The control component 104 is used to control data transmission between the interface 103, the NVM chip 105 and the DRAM 110, and is also used for storage management, mapping of host logical addresses to flash physical addresses, erase leveling, bad block management, etc. The control component 104 can be implemented in a variety of ways such as software, hardware, firmware or a combination thereof. For example, the control component 104 can be in the form of an FPGA (Field-programmable gate array), an ASIC (Application Specific Integrated Circuit) or a combination thereof. The control component 104 can also include a processor or a controller, in which software is executed to manipulate the hardware of the control component 104 to process IO (Input / Output) commands. The control component 104 can also be coupled to the DRAM 110 and can access data in the DRAM 110. The FTL table and / or cached IO command data can be stored in the DRAM.

[0006] The control unit 104 includes a flash memory interface controller (also known as a media interface controller or a flash memory lane controller). The flash memory interface controller is coupled to the NVM chip 105 and issues commands to the NVM chip 105 in accordance with the interface protocol of the NVM chip 105 to operate the NVM chip 105, and receives command execution results output from the NVM chip 105. Known NVM chip interface protocols include "Toggle" and "ONFI".

[0007] The storage device also includes a power management device for providing power to various components of the storage device. Chinese patent applications 201210258780.0 and 201510347811.3 illustrate power supply circuits for storage devices as examples of power management devices.

[0008] Figure 2 A power management device as an integrated circuit is demonstrated. Figure 2 The Vin pin of the power management integrated circuit shown receives external power supply and provides power of, for example, 3.3V through the SW pin. The FB pin receives a feedback signal of the power supply voltage to adaptively adjust the output voltage of the SW pin to stabilize the output voltage at a specified value (for example, 3.3V). Figure 2 The PG signal of the power management integrated circuit shown indicates whether the current power supply is normal.

[0009] Figure 3 Another power management integrated circuit is shown. Figure 3The power supply integrated circuit (IC) shown here receives external power at its Vin pin, including multiple power outputs (Vout1 and Vout2). For example, Vout1 is supplied by the LX1 pin of the power management IC. Feedback on the LX1 pin's supply voltage is received via the FB1 pin, adaptively adjusting the LX1 output voltage. Figure 3 The power management integrated circuit shown also includes a controller (not shown), which can be programmed to execute various programs to control GPIO pins (general purpose input and output pins) and control the opening / closing and timing of each power output. Figure 3 The demonstrated power management integrated circuit also includes one or more digital-to-analog converters (DACs) or analog-to-digital converters (ADCs). The controller uses these DACs to collect or monitor external signals, such as the voltage or current on the Vin pin to calculate power or ambient temperature. The controller also communicates with external devices via interfaces such as serial ports (UART) and I2C. Summary of the Invention

[0010] It is necessary to use a power management integrated circuit to measure the power consumption of electronic devices. In electronic devices that use power management integrated circuits, the input power of the power management integrated circuit is the power of the electronic device. The input power of the power management integrated circuit can be obtained through the Vin pin (in Figure 3 The voltage on the Vin pin (for example) is multiplied by the sum of the currents in the wires coupled to the Vin pin. While a power management integrated circuit can easily determine the voltage on the Vin pin, it is difficult to determine the sum of the currents in the wires coupled to the Vin pin. Therefore, an additional current measurement device is often required before the Vin pin, which introduces additional cost and complexity.

[0011] According to an embodiment of the present application, a solution is provided for measuring the input power consumption of a power management integrated circuit with high precision, without using an additional current measurement device. This effectively controls the cost and complexity of the electronic device while ensuring the power measurement accuracy.

[0012] According to the first aspect of the present application, a first power consumption measurement circuit according to the first aspect of the present application is provided, comprising a switch, a resistor with a specified resistance value, and a power management integrated circuit; the input end of the switch is coupled to a pin that provides power to an electronic device; the output end of the switch is coupled to a power input pin of the power management integrated circuit; the power management integrated circuit is also coupled to a control end of the switch; the power management integrated circuit is also coupled to the power input pin to obtain a first voltage at the input end of the switch and a second voltage at the power input pin.

[0013] According to the first power consumption measurement circuit of the first aspect of the present application, a second power consumption measurement circuit according to the first aspect of the present application is provided, which also includes a temperature sensor arranged adjacent to the switch, and the power management integrated circuit is coupled to the temperature sensor to obtain the temperature at the switch.

[0014] According to the second power consumption measurement circuit of the first aspect of the present application, a third power consumption measurement circuit according to the first aspect of the present application is provided, which also includes a control component, which is coupled to the power management integrated circuit to obtain the first voltage, the second voltage and the temperature collected by the power management integrated circuit.

[0015] According to one of the first to third power consumption measurement circuits of the first aspect of the present application, a fourth power consumption measurement circuit according to the first aspect of the present application is provided, further comprising a pin interface for providing power to the electronic device.

[0016] According to the fourth power consumption measurement circuit of the first aspect of the present application, there is provided a fifth power consumption measurement circuit according to the first aspect of the present application, further comprising: an expansion card, the expansion card being coupled to the interface and providing power to the pins providing circuitry for the electronic device;

[0017] The expansion card includes a power measurement unit to measure the current provided by the expansion card to the pin providing circuits for the electronic device, wherein the current provided by the pin providing power to the electronic device is equal to the current flowing through the input end of the switch.

[0018] According to the fifth power consumption measurement circuit of the first aspect of the present application, a sixth power consumption measurement circuit according to the first aspect of the present application is provided, wherein the expansion card includes a first interface and a second interface, the first interface is coupled to the interface, and the second interface is coupled to the interface of the computer or server.

[0019] According to the sixth power consumption measurement circuit of the first aspect of the present application, there is provided the seventh power consumption measurement circuit according to the first aspect of the present application, wherein the computer or the server is located in a production line for manufacturing the electronic device.

[0020] According to the fifth power consumption measurement circuit of the first aspect of the present application, there is provided the eighth power consumption measurement circuit according to the first aspect of the present application, wherein the controller acquires the current value from the current measurement unit.

[0021] According to the first power consumption measurement circuit of the first aspect of the present application, the ninth power consumption measurement circuit of the first aspect of the present application is provided, wherein the power management integrated circuit further comprises an analog-to-digital converter coupled to the input terminal of the switch and a power input pin of the power management integrated circuit to obtain a first voltage of the input terminal of the switch and a second voltage of the power input pin.

[0022] According to the first power consumption measurement circuit of the first aspect of the present application, the tenth power consumption measurement circuit of the first aspect of the present application is provided, wherein the switch comprises one or two MOSFETs, and the control terminal of the switch is the gate of the MOSFET.

[0023] According to one of the first to tenth power consumption measurement circuits of the first aspect of the present application, the eleventh power consumption measurement circuit of the first aspect of the present application is provided, wherein the power management integrated circuit is further coupled to a control component of the electronic device and provides power for the control component.

[0024] According to the eleventh power consumption measurement circuit of the first aspect of the present application, the twelfth power consumption measurement circuit of the first aspect of the present application is provided, wherein the electronic device further comprises an NVM chip and a DRAM, and the power management integrated circuit is further coupled to the NVM chip and the DRAM and provides power for the NVM chip and the DRAM.

[0025] According to one of the first to twelfth power consumption measurement circuits of the first aspect of the present application, the thirteenth power consumption measurement circuit of the first aspect of the present application is provided, further comprising a resistor; the output terminal of the switch is coupled to the first terminal of the resistor, and the second terminal of the resistor is coupled to the power input pin of the power management integrated circuit.

[0026] According to the thirteenth power consumption measurement circuit of the first aspect of the present application, the fourteenth power consumption measurement circuit of the first aspect of the present application is provided, wherein the resistor has a resistance R.

[0027] According to the second aspect of the present application, the first power consumption measurement method of the second aspect of the present application is provided, comprising: obtaining a first voltage of an input terminal of a switch; obtaining a second voltage of a power input pin; obtaining a current flowing through the switch according to the difference between the first voltage and the second voltage; and obtaining power consumption transmitted through the switch according to the first voltage and the current.

[0028] According to the first power consumption measurement method of the second aspect of the present application, the second power consumption measurement method of the second aspect of the present application is provided, wherein the power input pin is coupled to the second terminal of a resistor, and the first terminal of the resistor is coupled to the output terminal of the switch.

[0029] According to the first or second power consumption measurement method of the second aspect of the present application, the third power consumption measurement method according to the second aspect of the present application is provided, further comprising: obtaining the recorded on-resistance RDSon(T0) of the switch, so as to obtain the current according to the difference between the first voltage and the second voltage divided by the on-resistance RDSon(T0), wherein RDSon(T0) indicates that the resistance value of the on-resistance at temperature T0 is RDSon(T0).

[0030] According to the first or second power consumption measurement method of the second aspect of the present application, the fourth power consumption measurement method according to the second aspect of the present application is provided, further comprising: obtaining the recorded on-resistance RDSon(T0) of the switch, so as to obtain the current according to the difference between the first voltage and the second voltage divided by the on-resistance RDSon(T0)*2, wherein RDSon(T0) indicates that the resistance value of the on-resistance at temperature T0 is RDSon(T0), and the switch comprises two MOSFETs.

[0031] According to the third or fourth power consumption measurement method of the second aspect of the present application, the fifth power consumption measurement method according to the second aspect of the present application is provided, further comprising: obtaining a first temperature (Tt), and obtaining the resistance value of the on-resistance of the switch at the first temperature (Tt) as RD Son(Tt) according to RDSon(Tt)=RDson(T0)*(1+(Tt-T0)*k), wherein k is a coefficient with a specified value.

[0032] According to the fifth power consumption measurement method of the second aspect of the present application, the sixth power consumption measurement method according to the second aspect of the present application is provided, further comprising: obtaining the junction temperature (Tj) of the switch according to the first temperature (Tt), and obtaining the resistance value of the on-resistance of the switch at the junction temperature (Tj) as RD Son(Tj) according to RDSon(Tj)=RDson(T0)*(1+(Tj-T0)*k), wherein k is a coefficient with a specified value.

[0033] According to the sixth power consumption measurement method of the second aspect of the present application, the seventh power consumption measurement method according to the second aspect of the present application is provided, according to the method of claim 6, wherein a corresponding table of junction temperature Tj and first temperature Tt is recorded in advance in an electronic device; the switch controls the power supply of the electronic device through an interface of the electronic device; and the power supply input pin is a power supply input pin of a power management integrated circuit of the electronic device.

[0034] According to one of the second to seventh power consumption measurement methods of the second aspect of the present application, an eighth power consumption measurement method according to the second aspect of the present application is provided, which also includes: obtaining the recorded on-resistance RDSon(T0) of the switch and the resistance R of the resistor, so as to obtain the current according to the difference between the first voltage and the second voltage divided by the resistance R0(T0), wherein RDSon(T0) indicates that the resistance of the on-resistance at temperature T0 is RDSon(T0), and R0=RDSon(T0)+R.

[0035] According to one of the first to eighth power consumption measurement methods of the second aspect of the present application, a ninth power consumption measurement method according to the second aspect of the present application is provided, which also includes: supplying power to the input end of the switch through an expansion card; measuring a second current supplied to the switch on the expansion card; obtaining a third voltage at the input end of the switch on the electronic device; obtaining a fourth voltage at the power input pin; and obtaining a resistance R0 between the input end of the switch and the power input pin based on the difference between the third voltage and the fourth voltage divided by the second current.

[0036] According to the ninth power consumption measurement method of the second aspect of the present application, a tenth power consumption measurement method according to the second aspect of the present application is provided, wherein the expansion card is coupled to the electronic device through an interface; and the expansion card is a device external to the electronic device.

[0037] According to the ninth or tenth power consumption measurement method of the second aspect of the present application, an eleventh power consumption measurement method according to the second aspect of the present application is provided, wherein the resistance R0 between the input end of the switch and the power input pin is the on-resistance RDSon of the switch.

[0038] According to the ninth or tenth power consumption measurement method of the second aspect of the present application, a twelfth power consumption measurement method according to the second aspect of the present application is provided, wherein the resistance R0 from the input end of the switch to the power input pin is twice the on-resistance RDSon of the switch.

[0039] According to the ninth or tenth power consumption measurement method of the second aspect of the present application, a thirteenth power consumption measurement method according to the second aspect of the present application is provided, wherein the resistance R0 from the input end of the switch to the power input pin is the sum of twice the on-resistance RDSon of the switch and the resistance R.

[0040] According to one of the ninth to thirteenth power consumption measurement methods of the second aspect of the present application, a fourteenth power consumption measurement method according to the second aspect of the present application is provided, which also includes: recording the resistance R0 in the electronic device; and recording the temperature T0 when the resistance R0 is obtained in the resistance device to obtain RDSon(T0) and / or R0(T0).

[0041] According to one of the first to fourteenth power consumption measurement methods of the second aspect of the present application, a fifteenth power consumption measurement method according to the second aspect of the present application is provided, which also includes: averaging multiple of the powers to obtain a statistical value of the power. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments recorded in this application. For ordinary technicians in this field, other drawings can also be obtained based on these drawings.

[0043] Figure 1 A schematic diagram of a storage device in the prior art;

[0044] Figure 2 A power management device as an integrated circuit was demonstrated;

[0045] Figure 3 demonstrated another power management integrated circuit; and

[0046] Figure 4 A schematic diagram showing an electronic device according to an embodiment of the present application; and

[0047] Figure 5 A flow chart of a power consumption measurement method according to an embodiment of the present application is shown. DETAILED DESCRIPTION

[0048] The following is a clear and complete description of the technical solutions in the embodiments of the present application in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative efforts are within the scope of protection of this application.

[0049] Figure 4 A schematic diagram of an electronic device according to an embodiment of the present application is shown. A power management integrated circuit 410 is disposed within the electronic device. Power management integrated circuit 410 is used to provide circuitry for various components of the electronic device. For example, the electronic device includes a control component, one or more NVM chips 420, one or more DRAMs 430, and an interface 450. Interface 450 is used to couple the electronic device to a computer, server, or other device. The electronic device receives power through interface 450.

[0050] Optionally, the power management integrated circuit 410 also includes one or more digital-to-analog converters / analog-to-digital converters, and the controller collects or monitors external signals through the analog-to-digital converter / digital-to-analog converter, for example, collecting the voltage / current value on the Vin pin to calculate power, or collecting ambient temperature, etc.

[0051] The power management integrated circuit 410 includes multiple power input pins (Vin1 and Vin2) and multiple power supply channels (CH1, CH2, ... CH4) for outputting power. For example, the power input pin (Vin2) is coupled to the electronic device interface 450, thereby obtaining power provided to the electronic device from the interface 450. Figure 4 In the example shown in FIG. 4 , the power provided from the interface 450 is 12 V. The power provided from the interface 450 is coupled to the power input pin Vin2 via the switch 460. For clarity, Figure 4 In the example, power input pin Vin1 is not used. Optionally, the power provided by interface 450 is converted into power of other voltage values ​​through a voltage conversion circuit and coupled to power input pin Vin2. Still optionally, interface 450 provides two or more power channels, which are respectively coupled to the power input pins of the power management integrated circuit. Still for example, when the electronic device is a storage device using a U.2 standard interface, the power management integrated circuit 410 obtains a single 12V power from interface 450; when the electronic device is a storage device using an M.2 standard interface, the power management integrated circuit 410 obtains a single 3.3V power from interface 450.

[0052] As an example, the switch 460 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). The Vin2_EN pin of the power management integrated circuit 410 is connected to the control terminal of the switch 460 to control the opening or closing of the switch 460.

[0053] Each component of the electronic device (e.g., the control component, NVM chip 420, DRAM 430, etc.) requires one or more power supplies. The NVM chip 420 needs to be provided with power for the memory cell array (denoted as V1), power for the IO interface (denoted as Vp), and optionally additional power (denoted as Vpp). The DRAM 430 needs to be provided with power for the memory cell array (denoted as V1), power for the IO interface (denoted as Vp), and optionally additional power (denoted as Vpp). The control component needs to be provided with power for the core circuit (denoted as VDD), power for the IO interface coupled to the NVM chip 420, power for the IO interface coupled to the DRAM 430, and optionally power for its GPIO pins.

[0054] Each power supply channel of the power management integrated circuit 410 is programmed to set the output voltage specification, and is coupled to the power supply pin of the respective component. Figure 4 The power supply channel CH1 of the power management integrated circuit 410 is used to provide power (VDD) for the core circuit of the control component 104. The power supply channel CH2 is used to provide power for the GPIO pins of the control component. The power supply channel CH3 is used to provide power (V1) for the memory cell array of the NVM chip 420. The power supply channel CH4 is used to provide power (V1) for the memory cell array of the DRAM 430. Optionally, the power management integrated circuit 410 also includes additional power supply channels for providing power for charging the backup power supply of the storage electronics, for example. It can be understood that the coupling mode of each power supply channel of the power management circuit 410 and each component of the storage device can be changed, for example, the power supply channel CH1 is used to provide power for the GPIO pins of the control component, while the power supply channel CH2 is used to provide power (VDD) for the core circuit of the control component.

[0055] The pin of interface 450 that provides power to power management integrated circuit 410 is called Vin. The power provided by pin Vin is coupled to the input of switch 460, while the output of switch 460 is coupled to power input pin Vin2 of power management unit 410. Power management integrated circuit 410 also includes an analog-to-digital converter (ADC) 412, which is used to acquire the voltage at pin Vin (denoted as V1) and the voltage at power input pin Vin2 (denoted as V2). The voltage drop across switch 460 is calculated as ΔV = V1 - V2. The voltages acquired by ADC 412 are relatively accurate.

[0056] The resistance of switch 460 when on is called the on-resistance (RDSon). Due to the on-resistance RDSon, when switch 460 is on, the current flowing through it causes a voltage drop (ΔV = V1 - V2) between the input and output terminals of switch 460. For a given switch 460 under given conditions (e.g., temperature), its RDSon is known. Therefore, the current I supplied to the power management integrated circuit 410 by switch 460 can be calculated as ΔV / RDSon, and the power consumption supplied to the electronic device via interface 450 can be calculated as I*V1.

[0057] In an alternative embodiment, switch 460 includes two MOSFETs connected in series. Each MOSFET has the same or different on-resistance RDSon. For example, if the two MOSFETs constituting switch 460 have the same on-resistance, the current I provided to power management integrated circuit 410 through switch 460 is equal to ΔV / (2*RDSon).

[0058] However, as electronic devices are mass-produced, the inventors have noticed that the consistency and fluctuation of the on-resistance R DSon of switch 460 affect the accuracy of measuring electronic device power consumption using the above method. The on-resistance R DSon of switch 460 ranges from a few milliohms to tens of milliohms. However, among multiple switches 460 produced in large quantities, the on-resistance R DSon can vary by up to 40% (indicating consistency). Furthermore, the on-resistance R DSon also varies significantly with temperature (indicating fluctuation). This affects the accuracy of power consumption measurement.

[0059] Continue to read Figure 4 According to an embodiment of the present application, optionally, a resistor 462 (denoted as resistor R 462, where R also represents its resistance) with a known resistance is connected in series between the switch 460 and the power input pin Vin2. The resistance of the resistor R 462 has a relatively high consistency relative to the on-resistance R DSon of the switch 460. The resistance of the resistor R 462 is selected to be several times, for example, 3 times, the on-resistance R DSon of the switch 460. By connecting the switch 460 and the resistor R 462 in series, the resistance on the path from the pin Vin to the power input pin Vin2 becomes R DSon + R. Since the resistor R has good consistency, the resistance R DSon + R has a higher consistency relative to the resistance R DSon, thereby reducing the negative impact of the poor consistency of the resistor R DSon on the power measurement accuracy. On the other hand, the resistor R 462 is located in the power supply path of the electronic device, and a large current flows through it. The resistor R 462 with a larger resistance is not selected to reduce the energy consumption of the resistor R 462.

[0060] Analog-to-digital converter (ADC) 412 acquires the voltage at pin Vin (denoted as V1) and the voltage at power input pin Vin2 (denoted as V2), and the voltage drop across the series-connected switch 460 and resistor R 462 is calculated as ΔV = V1 - V2. The series connection of switch 460 and resistor R 462 is represented by R0 = RDSon + R. The current I supplied to the power management integrated circuit 410 via switch 460 is calculated as ΔV / R0, and the power consumption supplied to the electronic device via interface 450 is calculated as I*V1. Because resistor R0 has greater consistency and less fluctuation than the on-resistance RDSon of switch 460, the power consumption measured in this manner is more accurate.

[0061] Furthermore, efforts are made to eliminate the influence of the consistency of the on-resistance RDSon of the switch 460. According to an embodiment of the present application, an expansion card 480 is also provided for measuring the on-resistance RDSon of the switch 460 of each electronic device produced during the production process. The expansion card 480 includes an MCU (Micro-Controller Unit) and a power measurement unit 484. The expansion card 480 also includes an interface (not shown) for bridging the interface 450 and an interface (referred to as interface 486) of a computer, server or other electronic device to which the interface 450 should be connected. The power measurement unit 484 is, for example, an ammeter INA219 (from http: / / www.ti.com.cn / product / cn / INA219 / technicaldocuments An ammeter INA219 is available).

[0062] The power provided by interface 486 is provided to interface 450 via power measurement unit 484, and further provided to the input of switch 460. The electronic device carrying power management integrated circuit 410 and interface 450 does not include expansion card 480. Expansion card 480 is connected to interface 450 and interface 486 on, for example, a production line for electronic devices to measure the RDSon of switch 460. Thus, a single expansion card 480 can serve multiple manufactured electronic devices. Therefore, providing power measurement unit 484 on expansion card 480 does not significantly increase the overall acquisition cost of the electronic device.

[0063] It is understood that, in addition to using expansion card 480 on the production line, expansion card 480 can also be used to measure the power consumption of electronic devices during the development process of electronic devices. Expansion card 480 bridges interface 450 and interface 486 and is able to obtain all other signals transmitted on interface 480.

[0064] On the production line, expansion card 480 is coupled to interface 486, and for each manufactured electronic device, the interface 450 of the electronic device is coupled to expansion card 480. Expansion card 480 provides power from interface 486 to the electronic device through interface 450, thereby enabling the electronic device to operate. MCU 482 of expansion card 480 reads the current measured by power measurement unit 484, which is also the power supply current provided by the expansion card to interface 450, that is, the current flowing through switch 460 (denoted as I0). Optionally, expansion card 480 is coupled to a test computer, which obtains the current measurement value (I0) from MCU 482 or power measurement unit 484. Due to the series connection, current I0 is also the current value flowing through switch 460 when switch 460 is turned on.

[0065] Still on the production line, at the same time (or near the time, denoted as time t0) that the power measurement unit 484 obtains the current measurement value I0, the electronic device's power management integrated circuit 410 collects the voltage of pin Vin (denoted as V1) and the voltage of power input pin Vin2 (denoted as V2). The voltage drop across the series connection of switch 460 and resistor R 462 is calculated as ΔV = V1 - V2. Furthermore, the on-resistance R DSon of switch 460 is calculated as I0 = ΔV / R0, where R0 = R DSon + R, and R is the resistance of resistor 462. The calculated on-resistance R DSon of switch 460 is recorded in the electronic device. After leaving the production line, during operation, the electronic device's power can be calculated as V1 * ΔV / R0 = V1 * ΔV / (RDSon + R).

[0066] Alternatively, expansion card 480 may fail to measure the on-resistance of switch 460 on the production line. In this case, a default value of on-resistance RDSon of switch 460, such as 14 milliohms, is recorded in the electronic device. Alternatively, expansion card 480 is also suitable for use in electronic devices that do not include resistor R462. The on-resistance of switch 460 can be obtained based on the measured current value I0 = ΔV / RDSon.

[0067] Furthermore, the electronic device is further provided with a temperature sensor 464 for measuring the temperature of the location. The power management integrated circuit 410 also collects the temperature value (denoted as T) measured by the temperature sensor 464.

[0068] At time t0 (or near time t0), the power management integrated circuit 410 obtains the temperature value (denoted as T0) collected by the temperature sensor 464. The on-resistance of the switch 460, obtained according to I0(T0) = ΔV / R0(T0), is denoted as RDSon(T0), which is the on-resistance value at temperature T0, where I0(T0) is the current I0 measured at temperature T0, R0(T0) = R(T0) + RDSon(T0), and R0(T0) is the resistance value of the on-resistance RDSon in series with the resistor R462 at temperature T0. Alternatively, it is assumed that the resistance value of the resistor R462 does not change substantially within the operating temperature range of the electronic device, such that R = R(T0), and R0(T0) = R + RDSon(T0).

[0069] The temperature sensor 464 is disposed close to the switch 460 so that the temperature T0 measured by the temperature sensor 464 is as close as possible to the temperature of the switch 460 or the junction temperature (denoted as Tj) of the MSOFET.

[0070] As can be understood, since temperature sensor 464 and switch 460 each have their own size, there is a spatial distance (denoted as L) between them. The presence of L causes the junction temperature Tj of switch 460 to differ from the temperature T measured by temperature sensor 464. However, since temperature sensor 464 is placed in close proximity to switch 460, the value of distance L is small, resulting in a small difference between the temperature T measured by temperature sensor 464 and the junction temperature Tj of switch 460. Therefore, replacing junction temperature Tj with temperature T does not introduce significant error in power measurement. Furthermore, the difference between junction temperature Tj and temperature T measured by temperature sensor 464 also depends on the thermal resistance (denoted as Rth) from the junction of switch 460 to temperature sensor 464 and the power consumed by the junction of switch 460. Thermal resistance Rth is related to distance L. As distance L is small, the value of thermal resistance Rth is also small (approximately 5 to 10). The power consumption of the junction of switch 460 comes from the heat generated by the current I0 flowing through the on-resistance RDSon of switch 460. The value of the on-resistance RDSon is relatively small (several milliohms), and the value of the current I0 is around 1 ampere or no more than 10 amperes. This makes the difference between the junction temperature Tj caused by the thermal resistance (denoted as Rth) from the junction of switch 460 to the temperature sensor 464 and the power consumption of the junction of switch 460 and the temperature T measured by the temperature sensor 464 not large (approximately 0.006 to 0.18 degrees Celsius). In contrast, when the electronic device is in operation, the temperature T measured by the temperature sensor is approximately 20-80 degrees Celsius. Therefore, in one embodiment of the present application, when measuring the power consumption of the electronic device, the difference between the junction temperature Tj and the temperature T measured by the temperature sensor 464 can be ignored.

[0071] At the production line, at time t0, the temperature sensor's temperature T0 is measured, and the on-resistance of the switch 460 is measured as RDSon(T0). The T0 and RDSon(T0) are recorded in the circuit device in association. After leaving the production line, during the operation of the electronic device, the voltage V1 and AV are measured at time tt, and the temperature sensor's temperature Tt is obtained, and the resistance R0's resistance R0(Tt) = f(R0(T0), Tt-T0) at temperature Tt is obtained, where R0(T0) is the resistance of the switch 460 and the resistance R462 in series with the resistance R0 at the temperature T0 measured at the production line, and f(R0(T0), Tt-T0) is the function of the resistance R0 changing with temperature. Thus, the power consumption of the electronic device at time tt is V1*AV / f(R0(T0), Tt-T0) according to V1*AV / R0 = V1*AV / (RDSon+R).

[0072] As another example, R0(Tt) = f(R0(T0), Tt-T0) is simplified by an empirical formula. The normal operating temperature of the electronic device is 25-120 degrees Celsius. In this temperature range, R0(Tt) = RDson(T0)*(1+(Tt-T0)*k)+R, where k is 0.001-0.01, and R is the resistance of the resistance 462, for example, k = 0.00437. Thus, the power consumption of the electronic device at time tt is V1*AV / (RDson(T0)*(1+(Tt-T0)*k)+R). Alternatively, in the case that the resistance R 462 is not included in the electronic device, the power consumption of the electronic device at time tt is V1*AV / (RDson(T0)*(1+(Tt-T0)*k)). Alternatively, in the case that the resistance R 462 is not included in the electronic device, and the switch 460 includes two MOSFETs, the power consumption of the electronic device at time tt is V1*AV / (2*RDson(T0)*(1+(Tt-T0)*k)).

[0073] Still further, the difference between the junction temperature Tj and the temperature T measured by the temperature sensor 464 is considered. A table recording the relationship between the junction temperature Tj and the temperature T measured by the temperature sensor 464 is recorded in the electronic device. For example, the table includes a plurality of entries, each entry recording the junction temperature Tj corresponding to one of the values of the temperature T. As another example, each entry of the table records one of the values of the temperature T, the junction temperature Tj corresponding to the specified power of the electronic device. The specified power in the table can be divided into several levels, thereby narrowing the range of values of the specified power to reduce the number of entries of the table. After leaving the production line, Tt in the formula V1*△V / f(R0(T0), Tt-T0) is replaced by Tj=F(Tt) during the operation of the electronic device, F representing the corresponding relationship between the temperature Tt and the junction temperature Tj obtained by looking up the table. The table recording the corresponding relationship between the temperature Tt and the junction temperature Tj is obtained in experiments and recorded in the electronic device. As an example, after the development of the electronic device is completed, the temperature Tt and the junction temperature Tj are measured for a sample of the electronic device under a plurality of temperature and power levels to obtain the table recording the corresponding relationship between the temperature Tt and the junction temperature Tj. The obtained table is applicable to all electronic devices of the same type manufactured on the production line.

[0074] In summary, according to the embodiments of the present application, the power management integrated circuit 410 measures the voltage V1 of the pin Vin, the voltage V2 on the power pin Vin2, and the voltage drop △V=V1-V2 across the switch 460 and the resistor R in series, so that the current flowing through the switch 460 I=△V / R0 can be known, where R0=(RDSon+R). The value of R0 at the temperature T0 is obtained on the production line, and is recorded in the electronic device on the production line. During the operation of the electronic device, the power management integrated circuit 410 measures the voltage V1 of the pin Vin, the voltage V2 on the power pin Vin2, and the current temperature Tt provided by the temperature sensor 464. The value of the resistance R0 at the temperature Tt R0(Tt) is obtained according to the known change of the value of R0 with temperature, and the instantaneous power consumption of the electronic device is obtained by V1*△V / R0(Tt).

[0075] Still further, the measured instantaneous power consumptions of the electronic device are filtered or averaged to obtain the power consumption of the electronic device within a specified time period (e.g., 1 millisecond).

[0076] As will be understood, the power management integrated circuit 410 measures the voltage V1 on pin Vin, the voltage V2 on power pin Vin2, and the current temperature Tt provided by the temperature sensor 464. The sum of the resistance values ​​of resistor R462 and the on-resistance RDSon of switch 460 at temperature T0, R0(T0), is recorded in the electronic device or the power management integrated circuit 410. The relationship between R0(Tt) and R0(T0) is also recorded in the electronic device or the power management integrated circuit 410. The process of calculating the power consumption of the electronic device based on these parameters is simple and can be implemented by a hardware calculation unit, the power management integrated circuit 410 itself, or the control component of the electronic device.

[0077] Figure 5 A flow chart of a power consumption measurement method according to an embodiment of the present application is shown.

[0078] After the development of the electronic device in which the power consumption measurement system according to the embodiment of the present application is deployed is basically completed, for example, after the hardware design is completed and a physical sample is obtained, the temperature sensor of the electronic device is measured in the laboratory (see also FIG. Figure 4 , the relationship between the temperature Ts collected by the temperature sensor 464 and the junction temperature (Tj) of the switch 460 (510), and a table reflecting the relationship between the junction temperature Tj and the temperature Ts measured by the temperature sensor 464 is obtained. For example, the table includes multiple entries, each entry recording the junction temperature Tj corresponding to one of the values ​​of the temperature T. As another example, each entry in the table records the junction temperature Tj corresponding to one of the values ​​of the temperature T when the electronic device has a specified power. The specified power in the table can be divided into several levels, thereby narrowing the range of the value of the specified power and reducing the number of entries in the table.

[0079] Step 510 is optional because the temperature sensor 464 is disposed near the switch 460 , and thus under the operating conditions of the electronic device (power, temperature range), the difference between Ts collected by the temperature sensor and the junction temperature of the switch 460 is not large.

[0080] During the manufacturing process of electronic devices on a production line, the on-resistance RDSon of the switch 460 of each manufactured electronic device is measured, as well as the temperature T0 during the measurement, which is, for example, the temperature collected by the temperature sensor 464. For example, by using Figure 4The illustrated expansion card 480 measures the current flowing through switch 460 and uses the power management integrated circuit 410 to obtain the voltage drop caused by the current flowing through switch 460, thereby obtaining the on-resistance R DSon(T0) of switch 460. Optionally, a resistor R 462 is connected in series with switch 460, and the effect of resistor R 462 is also taken into account when measuring the on-resistance R DSon(T0). For example, the resistance of resistor R 462 is subtracted from the measured value to obtain R DSon(T0).

[0081] During the manufacturing process of the electronic device on the production line, the measured on-resistance R DSon(T0) at temperature T0 and the resistance R of the resistor connected in series with switch 460 (resistor R 462) are recorded in the non-volatile memory of the electronic device in association with temperature T0 (530). Optionally, the table obtained in step 510 is also recorded in the electronic device on the production line. Thus, each electronic device manufactured on the production line has the same table from step 510, and each electronic device has its own measured on-resistance R DSon(T0) of switch 460 at temperature T0.

[0082] After the electronic device is off the production line, during operation, the power supply voltage (V1) input to the electronic device through the interface 450, the voltage drop ΔV across the switch 460 (or the voltage drop ΔV across the switch 460 and the resistor 462 connected in series), and the current temperature Tt (540) are collected for use in calculating power consumption. The collected power supply voltage V1, the voltage drop ΔV, and / or the current temperature Tt can be obtained by an analog-to-digital converter of the power management integrated circuit or read through a bus.

[0083] The power consumption of the electronic device is calculated (550) based on the obtained supply voltage V1, voltage drop ΔV and / or current temperature Tt, as well as the on-resistance RDSon(T0) of the switch 460 at the temperature T0 recorded in the electronic device, the resistance value of the resistor R462, and a table optionally reflecting the relationship between the junction temperature Tj of the switch 460 and the temperature Ts measured by the temperature sensor 464. For example, the power consumption of the electronic device is obtained according to P=V1*I=V1*(ΔV / (RDSon(T0)*(1+(Tt-T0)*k))(Formula (1)), or P=V1*(ΔV / (RDSon(T0)*(1+(Tt-T0)*k)+R)(Formula (2)). Formula (1) is used for an electronic device that does not include resistor R 462, while formula (2) is used for an electronic device that includes resistor R. If a table recording the relationship between the junction temperature Tj of the reaction switch 460 and the temperature Ts measured by the temperature sensor 464 is provided in the electronic device, Tt and / or T0 in the above formulas (1) and (2) are also replaced with Tj obtained in the table.

[0084] Alternatively, based on the principles of the above embodiments, those skilled in the art will be able to adjust the above power consumption calculation formula to suit the specific configuration of the electronic device. For example, if the switch 460 of the electronic device includes two MOSFETs, RDSon(T0) in the formula can be adjusted to RDSon(T0)*2.

[0085] Furthermore, the supply voltage V1, the voltage drop ΔV and / or the current temperature Tt are periodically obtained, and the power consumption is calculated.

[0086] Although the present application has been described with reference to examples, this is for illustrative purposes only and is not intended to limit the present application, and changes, additions and / or deletions to the embodiments may be made without departing from the scope of the present application.

[0087] Those skilled in the art to which these embodiments relate and who benefit from the teachings presented in the above description and the associated drawings will recognize many modifications and other embodiments of the present application described herein. Therefore, it should be understood that this application is not limited to the specific embodiments disclosed, and modifications and other embodiments are intended to be included within the scope of the appended claims. Although specific terms are employed herein, they are used in a generic and descriptive sense only and not for purposes of limitation.

Claims

1. A power consumption measurement system comprising a switch, a resistor with a specified resistance value, and a power management integrated circuit; The input of the switch is coupled to a pin that provides power to the electronic device; The output end of the switch is coupled to the power input pin of the power management integrated circuit; The power management integrated circuit is also coupled to the control terminal of the switch; The power management integrated circuit is further coupled to the power input pin to obtain a first voltage at the input end of the switch and a second voltage at the power input pin; in, Also comprising a resistor; the output end of the switch is coupled to the first end of the resistor, and the second end of the resistor is coupled to the power input pin of the power management integrated circuit; The resistor has a resistance value R; Wherein, a temperature sensor is provided adjacent to the switch, and the power management integrated circuit is coupled to the temperature sensor to obtain the temperature at the switch; wherein, the measured instantaneous power of the electronic device is obtained based on the first voltage and the second voltage measured by the power management integrated circuit and the temperature Tt at the switch provided by the temperature sensor, and multiple measured instantaneous power consumptions of the electronic device are filtered or averaged to obtain the power consumption of the electronic device within a specified time period; The measured instantaneous power of the electronic device is: V1*△V / R0(Tt); V1 is the first voltage; the voltage drop △V across the series-connected switch and resistor is V1-V2, and V2 is the second voltage; R0(Tt) is the value of the resistor R0 at temperature Tt, R0=RDSon+R, where R is the resistance of the resistor; and RDSon is the on-resistance of the switch. 2 . The power consumption measurement system according to claim 1 , further comprising a control component coupled to the power management integrated circuit to obtain the first voltage, the second voltage and the temperature collected by the power management integrated circuit. 3 . The power consumption measurement system according to claim 1 , further comprising a pin interface for providing power to the electronic device.

4. The power consumption measurement system according to claim 3, further comprising: expansion cards, The expansion card is coupled to the interface and provides power to the pins that provide circuits for the electronic device; The expansion card includes a power measurement unit to measure the current provided by the expansion card to the pin providing circuits for the electronic device, wherein the current provided by the pin providing power to the electronic device is equal to the current flowing through the input end of the switch. The power consumption measurement system according to claim 4 , wherein The expansion card includes a first interface and a second interface, the first interface is coupled to the interface, and the second interface is coupled to an interface of a computer or a server. The power consumption measurement system according to claim 5 , wherein The computer or the server is located in a production line for manufacturing the electronic device.

7. The power consumption measurement system according to claim 1, wherein The switch includes one or two MOSFETs, and the control terminal of the switch is the gate of the MOSFET.

8. The power consumption measurement system according to any one of claims 1 to 7, wherein The power management integrated circuit is also coupled to a control component of the electronic device and provides power to the control component.

9. A method for measuring power consumption, comprising: obtaining a first voltage at an input terminal of the switch; Obtaining a second voltage of a power input pin; obtaining a current flowing through the switch according to a difference between the first voltage and the second voltage; obtaining power consumption transmitted through the switch according to the first voltage and the current; Obtaining a temperature Tt at the switch; obtaining a measured instantaneous power of the electronic device based on the first voltage and the second voltage, and the temperature Tt at the switch, and filtering or averaging multiple measured instantaneous power consumptions of the electronic device to obtain the power consumption of the electronic device within a specified time period; The measured instantaneous power of the electronic device is: V1*△V / R0(Tt); V1 is the first voltage; the voltage drop △V across the series-connected switch and resistor is V1-V2, and V2 is the second voltage; R0(Tt) is the value of the resistor R0 at temperature Tt, R0=RDSon+R, where R is the resistance of the resistor; and RDSon is the on-resistance of the switch.

Images