Multi-zone pedestal for ALD film property correction and tunability

Abstract

A deposition process configured to be performed on a substrate includes a substrate support. The substrate support includes a plurality of zones and a plurality of resistive heaters disposed across the plurality of zones. The plurality of resistive heaters includes a plurality of independently controllable resistive heaters disposed in respective ones of the plurality of zones. A controller is configured to control the plurality of resistive heaters during the deposition process to selectively adjust the temperature within the plurality of zones.

Description

[0001] Cross - reference to related applications

[0002] This application claims priority to U.S. Utility Patent Application No. 16 / 192,425, filed on November 15, 2018, and claims the benefit of U.S. Provisional Application No. 62 / 587,943, filed on November 17, 2017, and U.S. Provisional Application No. 62 / 609,077, filed on December 21, 2017. The entire disclosure of the applications cited above is incorporated herein by reference. Technical field

[0003] The present invention relates to a temperature - adjustable pedestal for an ALD substrate processing chamber. Background art

[0004] The background description provided here is for the purpose of generally presenting the background of the disclosure. The work of the currently - named inventors in the aspects described in this background art section and in the ranges of the description that could not be determined to be prior art at the time of filing the application is neither expressly nor implicitly admitted to be prior art to the disclosure.

[0005] A substrate processing system can be used to process substrates, such as semiconductor wafers. Examples of substrate processing include etching, deposition, photoresist removal, etc. During processing, the substrate is disposed on a substrate support (such as an electrostatic chuck), and one or more processing gases can be introduced into the processing chamber.

[0006] One or more processing gases can be delivered to the processing chamber through a gas delivery system. In some systems, the gas delivery system includes a manifold that is connected to a showerhead located in the processing chamber via one or more conduits. In some examples, the processing utilizes atomic layer deposition (ALD) to deposit a thin film on the substrate. Summary of the invention

[0007] A substrate processing system configured to perform a deposition process on a substrate includes a substrate support that includes a plurality of regions and a plurality of resistive heaters disposed throughout the plurality of regions. The plurality of resistive heaters include a plurality of independently - controllable resistive heaters disposed in respective regions of the plurality of regions. A controller is configured to control the plurality of resistive heaters during the deposition process to selectively adjust the temperature within the plurality of regions.

[0008] Among other features, the deposition process is an atomic layer deposition (ALD) process, and the substrate support is an ALD susceptor. The plurality of regions includes a central region, at least one intermediate region radially outside the central region, and at least one outer edge region radially outside the at least one intermediate region. The at least one outer edge region includes a first outer edge region adjacent to the at least one intermediate region and a second outer edge region radially outside the first outer edge region. The at least one outer edge region extends radially outside the outer edge of the substrate.

[0009] Among other features, the at least one intermediate region includes a first plurality of azimuthal segments. The at least one outer edge region includes a second plurality of segments that are azimuthally offset from the first plurality of segments. The second plurality of segments is offset from the first plurality of segments by 45 degrees. The substrate support includes a heater layer, and the plurality of resistive heaters are embedded within the heater layer below an upper layer of the substrate support. At least a portion of the heater layer is disposed radially outside the edge of the substrate.

[0010] A substrate support for a substrate processing system configured to perform a deposition process on a substrate, the substrate support including: a substrate; a plurality of regions; and a heater layer disposed on the substrate. The heater layer includes a plurality of resistive heaters arranged throughout the plurality of regions. The plurality of resistive heaters includes individually controllable resistive heaters arranged in respective regions of the plurality of regions. The plurality of regions includes a central region, at least one intermediate region radially outside the central region, and at least one outer edge region radially outside the at least one intermediate region. The at least one outer edge region extends radially outside the outer edge of the substrate.

[0011] Among other features, the deposition process is an atomic layer deposition (ALD) process, and the substrate support is an ALD susceptor. The at least one outer edge region includes a first outer edge region adjacent to the at least one intermediate region and a second outer edge region radially outside the first outer edge region. The at least one intermediate region includes a first plurality of azimuthal segments. The at least one outer edge region includes a second plurality of azimuthal segments that are azimuthally offset from the first plurality of azimuthal segments. The second plurality of azimuthal segments is offset from the first plurality of azimuthal segments by 45 degrees. At least a portion of the heater layer is disposed on a stepped portion of the substrate. Only the outer edge of the substrate contacts the upper surface of the substrate support. The substrate is disposed on a minimum contact area feature of the substrate support.

[0012] A method of manufacturing a substrate support for a substrate processing system includes machining an upper plate to form a cavity within the upper plate and forming a heater layer within the cavity, wherein the substrate processing system is configured to perform a deposition process on a substrate. Forming the heater layer includes bonding the heater layer to an upper wall of the cavity, and the heater layer includes a plurality of zones, each of the plurality of zones including an independently controllable resistive heater. The method includes disposing a substrate within the cavity. Bonding the substrate within the cavity using a bonding material, and the upper plate enclosing the heater layer and the bonding material within a Faraday cage.

[0013] Further scope of applicability of the present disclosure will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are for illustrative purposes only and are not intended to limit the scope of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The present disclosure will be more fully understood from the detailed description and the drawings, wherein:

[0015] Figure 1A is a functional block diagram of an example of a substrate processing system including a multi-injector showerhead according to the present invention;

[0016] Figure 1B shows a heater zone of a substrate support according to the present invention;

[0017] Figures 2A - 2C shows an exemplary deposition thickness non-uniformity profile according to the present invention;

[0018] Figure 2D , 2E and 2F show arrangements of other exemplary heater zones according to the present invention:

[0019] Figure 3A , 3B , 3C and 3D show configurations of exemplary heater zones according to the present invention:

[0020] Figure 4A , 4B , 4C and 4D show exemplary structures of a substrate support according to the present invention; and

[0021] Figure 5A , 5B , 5C and 5D show other exemplary structures of a substrate support according to the present invention.

[0022] In the drawings, reference numerals may be reused to identify like and / or identical elements. DETAILED DESCRIPTION

[0023] In film deposition processes, such as in atomic layer deposition (ALD), various properties of the deposited film vary across the spatial (i.e., x-y coordinates of the horizontal plane) distribution. For example, a substrate processing tool may have specifications based on film thickness non-uniformity (NU), which can be determined as the full range, half range, and / or standard deviation of a combination of measurements taken at predetermined locations on the surface of a semiconductor substrate. In some examples, existing NU can be compensated for and eliminated by, for example, addressing the direct cause of the NU and / or introducing an offset to the NU to reduce the NU. In other examples, materials may be deliberately deposited and / or removed non-uniformly to compensate for known non-uniformities in other (e.g., previous or subsequent) steps of the process. In these examples, a predetermined non-uniform deposition / removal profile can be calculated and used.

[0024] The various properties of the deposited ALD film may be affected by the substrate temperature during deposition. Systems and methods in accordance with the principles of the present invention can be configured to adjust the temperature distribution to reduce thickness NU. For example, the temperature distribution can be adjusted to compensate for known NU of a particular substrate processing tool (which can be referred to as profile compensation) to produce a predetermined NU profile (which can be referred to as profile adjustment) for use during a particular process, etc.

[0025] For example, during an ALD process (such as depositing an oxide film), the substrate is disposed on a substrate support (such as an ALD pedestal). Generally, an ALD pedestal includes a single zone. An ALD pedestal in accordance with the principles of the present invention includes a multi-zone (such as 2 to 20 or more zones) heater layer. The heater layer can be embedded within an upper layer of the pedestal. For example, the heater layer can include a polyimide and silicone heater layer that is at least partially encapsulated within an aluminum upper layer (e.g., an upper layer configured to support / contact the substrate disposed on the substrate support). In this example, the disposed aluminum upper layer can be used as a Faraday cage. In other examples, the upper layer can be a ceramic layer (such as Al2O3, A1N, etc.). Each zone of the heater layer controls the temperature of the corresponding zone of the pedestal. The upper layer is disposed on the base (such as a substrate plate) of the pedestal, and heat can be transferred from the upper layer to the substrate plate, which may be cooled.

[0026] The arrangement of the regions (such as number, shape, geometry, etc.) is configured to compensate for the known film thickness NU resulting from ALD processing. These regions can include, but are not limited to: two or more radial (i.e., annular) regions with different widths; two or more segmented radial regions (i.e., radial regions including multiple segments / azimuthal regions); an outer radial region adjacent to and / or overlapping the substrate edge; and an outer radial region arranged to adjust the temperature of the carrier ring (e.g., by adjustment to control / correct the radial profile for deposition and / or removal). In one example, these regions include ten regions, which include a central region, an inner-middle radius region, four outer-middle radius regions (i.e., an outer-middle radius region including four segments), and four outer-edge regions (i.e., an outer-edge region including four segments). In some examples, these radial regions can include more than four segments (such as eight or more). Additionally, the azimuthal regions of adjacent radial regions may not be aligned. Instead, the azimuthal regions of the radial regions can have different rotational orientations (i.e., clockwise orientations) relative to adjacent radial regions.

[0027] Now refer to Figure 1A and 1B , which shows an example of a substrate processing system 100 including a substrate support (such as an ALD pedestal) 104 according to the present invention. The substrate support 104 is arranged within a processing chamber 108. During processing, a substrate 112 is arranged on the substrate support 104. In some examples, the substrate support 104 can be configured to minimally contact the substrate 112 (such as only the outer edge of the substrate 112 can contact the upper surface of the substrate support 104, and the substrate 112 can be arranged on a minimum contact area (MCA) feature, etc.). In other examples, the substrate support 104 can be configured to provide backside gas clamping.

[0028] The gas delivery system 120 includes gas sources 122-1, 122-2,..., and 122-N (collectively referred to as gas sources 122), which are connected to valves 124-1, 124-2,..., and 124-N (collectively referred to as valves 124) and mass flow controllers 126-1, 126-2,..., and 126-N (collectively referred to as MFCs 126). These MFCs 126 control the flow of gas from the gas sources 122 to a manifold 128 (where the gas is mixed). The output of the manifold 128 is supplied to a manifold 136 through a selective pressure regulator 132. The output of the manifold 136 is input to a multi-injector showerhead 140. Although the manifolds 128 and 136 are shown, a single manifold can be used.

[0029] The substrate support 104 includes a plurality of regions. As shown, the substrate support 104 includes a central region 144, an inner-middle radius region 148, four outer-middle radius regions (i.e., the outer-middle radius region 152 including four segments 152-1, 152-2, 152-3, and 152-4), and four outer edge regions (i.e., the outer edge region 156 including four segments 156-1, 156-2, 156-3, and 156-4). The segments of the outer edge region 156 are offset from the segments of the outer-middle radius region 152 (i.e., rotated, for example, 45° relative to the segments of the outer-middle radius region 152). In some examples, the substrate support 104 may include a second outer edge region 158 that is radially outside the outer edge region 156. For example, the inner diameter of the second outer edge region 158 may be greater than the diameter of the substrate 112. The temperature of the substrate support 104 can be controlled by using independent controllable resistive heaters 160 disposed in the respective regions, as described in more detail below.

[0030] In some examples, the outer edge region 156 covers and / or extends beyond (i.e., in the radial direction) the outer edge of the substrate 112. For example, for a 300 mm substrate, the radius of the outer edge region 156 may be greater than 300 mm. Additionally, the width of the outer edge region 156 (i.e., the distance from the inner diameter to the outer diameter) is less than the widths of the inner-middle radius region 148 and the outer-middle radius region 152. For example, the width of the outer edge region 156 may be close to 10 mm (such as + / -2 mm), while the respective widths of the inner-middle radius region 148 and the outer-middle radius region 152 may be close to 40 mm (such as + / -2 mm). The relatively narrow width of the outer edge region 156 facilitates fine-tuning at the outer edge of the substrate 112.

[0031] In some examples, the substrate support 104 may include coolant channels 164. Cooling fluid is supplied from a fluid reservoir 168 and a pump 170 to the coolant channels 164. Pressure sensors 172, 174 may be disposed within the manifold 128 or the manifold 136, respectively, to measure pressure. Valves 178 and pumps 180 may be used to exhaust reactants from the processing chamber 108 and / or control the pressure within the processing chamber 108.

[0032] The controller 182 includes a dose controller 184 that controls the dose provided by the multi-injector nozzle 140. The controller 182 also controls the gas delivery from the gas delivery system 120. The controller 182 controls the pressure in the processing chamber and / or the exhaust of reactants by using the valves 178 and pumps 180. The controller 182 controls the temperature of the substrate support 104 and the substrate 112 based on temperature feedback (e.g., from sensors (not shown) within the substrate support and / or sensors (not shown) measuring the coolant temperature).

[0033] Now refer to Figure 2A, 2B and 2C, which show exemplary deposition thickness NU profiles for different processes. For example, as Figure 2A shown, the thickness NU is typically radial (e.g., NU typically may depend on the distance from the center of the substrate, and thus, there are different NUs in regions 200, 202, 204, 206, 208, and 210). In other examples, NU can be radial and azimuthal (such as in the rotational direction). For example, as Figure 2B shown, each of regions 212, 214, 216, and 218 may have a different NU range. In still other examples, NU can be radial only in certain directions. For example, as Figure 2C shown, each of regions 220, 222, 224, 226, and 228 may have a different NU range. Additionally, in examples where NU is radial, NU may increase significantly in a narrow region at the outer edge of the substrate. Thus, two, three, or four uniform radial heater regions may not be able to compensate for all possible NU patterns.

[0034] The arrangement of the regions enables compensation for radial and azimuthal thickness NU and compensation for NU at the narrow outer edge region of the substrate. By way of example only, Figure 2D , 2E and 2F show other exemplary region arrangements. In other examples, the substrate support 104 may include other arrangements and combinations of radial and azimuthal regions. For example, the substrate support 104 may include fewer (such as two) or more (such as 20 or more) regions, and each radial region may be segmented into 2 to 8 or more independently controllable azimuthal regions to increase adjustability.

[0035] For a known NU profile, the region temperatures can be controlled according to a predetermined temperature control curve. For example, one or more temperature control curves can be stored (such as stored in the controller 182 and / or in memory accessed by the controller 182), input by the user, etc. Each temperature control curve may be associated with a predetermined NU profile (e.g., for a given process or recipe, process chamber, etc.). Thus, during the ALD process, the heater regions can be controlled and adjusted separately to compensate for the deposition NU. The temperature control curve corresponds to the target temperature of each region of the substrate support and can be corrected based on the expected temperature output for the regions of a given substrate support. In some examples, the temperature control curve associates film characteristics (such as thickness, deposition rate, etc.) and / or region temperature with one or more heater region control parameters (such as duty cycle, output percentage). Thus, a predetermined temperature control curve can be retrieved based on the desired temperature distribution, film thickness, and / or other film characteristics, and the heater regions can be controlled based on the heater region control parameters in the retrieved temperature control curve.

[0036] The temperature of the corresponding heater region can be controlled based on one or more types of feedback. In one example, each region may include its own temperature sensor. In another example, the temperature of each region can be calculated. For example, the voltage and current of a resistive heater can be measured (e.g., using voltage and current sensors) to determine the resistance of the resistive heater. Since the resistance characteristics of the resistive heater are known, the temperature of the corresponding region can be calculated based on the resistance change caused by the associated temperature change. In some examples, a combination of temperature sensors and calculations using other sensed or measured parameters (such as voltage and current) can be utilized to provide feedback.

[0037] Now refer to Figure 3A 、 3B 、3C, and 3D, which show exemplary heater region configurations of a substrate support 300 with different outer heater region positions. The substrate support 300 includes a substrate 304 having an embedded heater layer 308. In Figure 3A , the heater layer 308 extends to the outer edge of the substrate 304. In Figure 3B , cylindrical vertically oriented heater regions 312 surround the outer edge of the substrate 304. For example, the heater regions 312 can be embedded in a silicone joint 316 or other materials surrounding the upper portion of the substrate 304. In Figure 3C , the heater regions 320 are provided on a stepped portion of the substrate 304 outside the edge of the substrate (which is arranged on the substrate support 300). For example, the heater regions 320 can be provided under a focus ring or an edge ring 322 arranged on the substrate support 300 to surround the substrate. In Figure 3D , the outer edge heater region 324 is arranged outside the substrate 304.

[0038] Now refer to Figure 4A 、 4B 、4C, and 4D, which show an exemplary structure of a substrate support 400. In Figure 4A , the upper plate 404 (such as an aluminum diffusion plate) of the substrate support 400 is machined to include cavities 408. As shown in Figure 4B , the heater layer 412 is formed within the cavities 408. For example, the heater layer 412 is pressed against the upper wall of the cavities 408. In Figure 4C , a substrate 416 (such as a cooling plate) is arranged within the cavities 408. For example, the substrate 416 is joined within the cavities 408 using a joining material (such as a silicone joint 420). In Figure 4DIn [the figure], the upper plate 404 is machined to remove a portion of the upper plate 404 and form an upper surface 424 having a desired geometry. In this manner, the silicone joint 420 and the substrate 416 are located on the atmospheric, radio frequency (RF) shielding side of the upper plate 404. Thus, the silicone joint 420, the substrate 416, the heater layer 412, etc. may contain materials that are incompatible with fluorine and other materials used in the processing chamber. Additionally, in this example, the upper surface 424 and the upper plate 404 can act as a Faraday cage surrounding the heater layer 412 and the silicone joint 420.

[0039] Now refer to Figure 5A , 5B , 5C, and 5D, which show other exemplary structures of the substrate support 500. In Figure 5A , the heater layer 504 is disposed between the lower plate 508 and the upper plate 512. The shielding ring 516 surrounds the heater layer 504, and the protective O-ring 520 surrounds the shielding ring 516. In Figure 5B , the protective tape 524 or other material surrounds the shielding ring 516. In Figure 5C and 5D , the lower plate 508 and the upper plate 512 are welded together at 528 and 532, respectively.

[0040] In some examples, the substrate support including the multi-region heater layer described above can be used to adjust the etching and deposition of the mandrel pattern and the associated spacer layer. For example, mandrels and spacer layers typically have extremely thin profiles. Thus, it is more difficult to control the critical dimensions, and relatively small process NU may result in significant critical dimension NU, such as spacer thickness NU. Therefore, the multi-region heater layer according to the principles of the present invention can be used to compensate for various process NU to improve spacer thickness uniformity, and the temperature can be controlled to adjust the critical dimensions of the features on the substrate surface (i.e., regardless of whether there is process NU). For example, if different portions of the substrate require different deposition thicknesses, the temperature of the corresponding heater regions can be independently controlled to achieve different deposition thicknesses on the substrate.

[0041] The foregoing description is merely illustrative in nature and is in no way intended to limit the present disclosure, its application, or uses. The broad teachings of the present disclosure can be implemented in a variety of forms. Thus, while the present disclosure includes specific examples, the true scope of the present disclosure should not be so limited since other modifications will become apparent upon study of the drawings, the specification, and the appended claims. It should be understood that one or more steps in a method can be performed in a different order (or concurrently) without changing the principles of the present disclosure. Further, while each embodiment is described above as having certain features, any one or more of those features described with respect to any embodiment of the present disclosure can be implemented in and / or combined with the features of any other embodiment, even if the combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and permutations of one or more of the embodiments with each other remain within the scope of the present disclosure.

[0042] Various terms are used to describe spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.), and the various terms include "connected," "engaged," "coupled," "adjacent," "next to," "on top of," "above," "below," and "disposed." Unless a relationship between a first and a second element is explicitly described as "direct" in the foregoing disclosure, when such a relationship is described in the foregoing disclosure, the relationship can be a direct relationship in which no other intervening element exists between the first and second elements, but can also be an indirect relationship in which one or more intervening elements exist (spatially or functionally) between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be construed to mean a logical (A or B or C) using a non-exclusive logical OR and should not be construed to mean "at least one of A, at least one of B, and at least one of C."

[0043] In some implementations, the controller is part of a system, which can be part of the above examples. Such systems can include semiconductor processing equipment, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer chucks, gas flow systems, etc.). These systems can be integrated with electronics for controlling their operations before, during, and after the processing of semiconductor wafers or substrates. The electronics can be referred to as a "controller", which can control various components or sub-components of one or more systems. Depending on the processing requirements and / or system type, the controller can be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer in and out of tools and other transfer tools, and / or load locks connected or interfaced to a particular system.

[0044] Broadly speaking, a controller can be defined as electronics having various integrated circuits, logic, memory, and / or software for receiving instructions, issuing instructions, controlling operations, enabling cleaning operations, enabling endpoint measurements, etc. The integrated circuits can include chips in the form of firmware storing program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). The program instructions can be instructions sent to the controller in the form of various individual settings (or program files), which define the operating parameters for performing a specific process on or for a semiconductor wafer or system. In some embodiments, the operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or die of a wafer.

[0045] In some implementations, the controller can be part of or coupled to a computer that is integrated with, coupled to, otherwise networked to, or a combination thereof with the system. For example, the controller can be in the "cloud" or be all or part of a fab host system, which can allow for remote access to wafer processing. The computer can enable remote access to the system to monitor the current progress of a manufacturing operation, review the history of past manufacturing operations, review trends or performance criteria of multiple manufacturing operations, change parameters of the current process, set processing steps to follow the current process, or initiate a new process. In some examples, a remote computer (such as a server) can provide a process recipe to the system via a network, which can include a local network or the Internet. The remote computer can include a user interface that enables the input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify the parameters for each processing step to be performed during one or more operations. It should be understood that the parameters can be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller can be distributed, for example, as one or more discrete controllers that are networked together and work towards a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes is one or more integrated circuits on a chamber that communicate with one or more integrated circuits remote (such as at the platform level or as part of a remote computer), which combine to control the process on the chamber.

[0046] Example systems can include, but are not limited to, plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing systems that can be associated with or used for the manufacture and / or preparation of semiconductor wafers.

[0047] As described above, depending on one or more processing steps to be performed by the tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, or tools used in the material transport that shuttles a wafer container between tool locations and / or load ports in a semiconductor manufacturing facility.

Claims

1. A substrate processing system configured to perform a deposition process on a substrate, the substrate processing system comprising: A substrate support including: A substrate plate, A plurality of regions, and A plurality of resistive heaters disposed throughout the plurality of regions, wherein the plurality of resistive heaters include a plurality of independently controllable resistive heaters disposed in respective regions of the plurality of regions; Wherein the plurality of regions include an outer heater region provided on a stepped portion of the substrate plate outside the edge of the substrate; and A controller configured to control the plurality of resistive heaters during the deposition process to selectively adjust the temperature within the plurality of regions.

2. The substrate processing system according to claim 1, wherein the deposition process is an atomic layer deposition (ALD) process, and the substrate support is an ALD susceptor.

3. The substrate processing system according to claim 1, wherein the plurality of regions include a central region, at least one intermediate region radially outside the central region, and at least one outer edge region radially outside the at least one intermediate region.

4. The substrate processing system according to claim 3, wherein the at least one outer edge region includes a first outer edge region adjacent to the at least one intermediate region and a second outer edge region radially outside the first outer edge region.

5. The substrate processing system according to claim 3, wherein the at least one outer edge region extends radially outside the outer edge of the substrate.

6. The substrate processing system according to claim 3, wherein the at least one intermediate region includes a first plurality of azimuthal segments.

7. The substrate processing system according to claim 6, wherein the at least one outer edge region includes a second plurality of azimuthal segments offset in the azimuthal direction from the first plurality of azimuthal segments.

8. The substrate processing system according to claim 7, wherein the second plurality of azimuthal segments are offset from the first plurality of azimuthal segments by 45 degrees.

9. The substrate processing system according to claim 1, wherein the substrate support includes a heater layer, and the plurality of resistive heaters are embedded in the heater layer below an upper layer of the substrate support.

10. The substrate processing system according to claim 9, wherein at least a portion of the heater layer is provided radially outside the edge of the substrate.

11. A substrate support for a substrate processing system configured to perform a deposition process on a substrate, the substrate support comprising: A substrate plate; A plurality of regions; And A heater layer provided on the substrate plate, wherein the heater layer includes a plurality of resistive heaters disposed throughout the plurality of regions, wherein the plurality of resistive heaters include a plurality of independently controllable resistive heaters disposed in respective regions of the plurality of regions, Wherein the plurality of regions include a central region, at least one intermediate region radially outside the central region, and at least one outer edge region radially outside the at least one intermediate region, and wherein the at least one outer edge region extends radially outside the outer edge of the substrate, wherein at least a portion of the heater layer is disposed on a stepped portion of the substrate outside the edge of the substrate.

12. The substrate support according to claim 11, wherein the deposition process is an atomic layer deposition (ALD) process, and the substrate support is an ALD susceptor.

13. The substrate support according to claim 11, wherein the at least one outer edge region includes a first outer edge region adjacent to the at least one intermediate region and a second outer edge region radially outside the first outer edge region.

14. The substrate support according to claim 11, wherein the at least one intermediate region includes a first plurality of azimuthal segments.

15. The substrate support according to claim 14, wherein the at least one outer edge region includes a second plurality of azimuthal segments offset in the azimuthal direction from the first plurality of azimuthal segments.

16. The substrate support according to claim 15, wherein the second plurality of azimuthal segments are offset from the first plurality of azimuthal segments by 45 degrees.

17. The substrate support according to claim 11, wherein at least one of the following is met: (i) only the outer edge of the substrate contacts the upper surface of the substrate support and (ii) the substrate is disposed on a minimum contact area feature of the substrate support.

18. A method of manufacturing a substrate support for a substrate processing system, wherein the substrate processing system is configured to perform a deposition process on a substrate, the method comprising: machining an upper plate to form a cavity therein; forming a heater layer in the cavity, wherein forming the heater layer includes bonding the heater layer to an upper wall of the cavity, and wherein the heater layer includes a plurality of regions, each of the plurality of regions including an independently controllable resistive heater; and disposing a substrate in the cavity, wherein the substrate is bonded in the cavity using a bonding material, and wherein the upper plate encloses the heater layer and the bonding material in a Faraday cage, the step of forming the heater layer further includes disposing at least a portion of the heater layer on a stepped portion of the substrate outside the edge of the substrate.

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