A thyristor composite device

Abstract

The present invention relates to a thyristor composite device. The device includes: a fast thyristor chip, a fast diode chip, and an insulating ceramic; the fast thyristor chip and the fast diode chip are both integrated on the insulating ceramic; the fast thyristor chip and the fast diode chip both include a control connection point and a high-voltage connection point; the control connection point of the fast thyristor chip is connected to the control connection point of the fast diode chip; the high-voltage connection point of the fast thyristor chip is connected to the high-voltage connection point of the fast diode chip. The thyristor composite device provided by the present invention, by adopting a fast thyristor chip, a fast diode chip, and an insulating ceramic, and integrating the fast thyristor chip and the fast diode chip on the insulating ceramic, can reduce the volume of the entire device, reduce the weight of the entire device, and increase the service life at the same time. Moreover, through the setting of each connection point, the problem of poor contact can be avoided, thereby improving the control effect.

Description

Technical Field

[0001] The invention relates to the field of thyristor composite control, in particular to a thyristor composite device. Background Art

[0002] The thyristor composite module in the prior art is composed of two chips of different volumes, the randomness of the shell is limited, the chip installation lead bolt clamping method adds bolts and accessories, which increases unnecessary volume and weight, and the module shape is not conducive to secondary development of the product.

[0003] In addition, each chip in the thyristor composite module is installed in a compressed manner, which will produce local or point heating when conducting electricity, which is not conducive to the heat dissipation distribution of the entire module. The module works in a high temperature state for a long time, which will reduce the service life of the module.

[0004] In addition, the existing thyristor composite modules are connected by plugging, which will cause problems such as poor contact if used for a long time in a humid environment or an environment with corrosive air. Various problems will also occur on mobile devices. Moreover, the control electrode leads are too long, which is not conducive to the reliable control of the module and produces high-frequency harmonic interference.

[0005] Therefore, providing a thyristor composite device with the characteristics of small size, light weight, long service life, good control effect, etc. is a technical problem that needs to be solved urgently in this field. Summary of the invention

[0006] The object of the present invention is to provide a thyristor composite device to solve the problems of large volume, heavy weight, short service life, poor control effect, etc. existing in the thyristor composite module.

[0007] To achieve the above object, the present invention provides the following solutions:

[0008] A thyristor composite device, comprising: a fast thyristor chip, a fast diode chip and insulating ceramics;

[0009] The fast thyristor chip and the fast diode chip are both integrated on the insulating ceramic;

[0010] The fast thyristor chip and the fast diode chip both include a control connection point and a high voltage connection point;

[0011] The control connection point of the fast thyristor chip is connected to the control connection point of the fast diode chip; the high-voltage connection point of the fast thyristor chip is connected to the high-voltage connection point of the fast diode chip.

[0012] Preferably, the fast thyristor chip and the fast diode chip both include a first high-voltage connection point and a second high-voltage connection point;

[0013] The first high-voltage connection point of the fast thyristor chip is connected to the first high-voltage connection point of the fast diode chip; the second high-voltage connection point of the fast thyristor chip is connected to the second high-voltage connection point of the fast diode chip.

[0014] Preferably, the fast thyristor chip and the fast diode chip also both include: a high-voltage interface;

[0015] The high-voltage interface of the fast thyristor chip and / or the high-voltage interface of the fast diode chip is connected to the voltage output port of an external control system;

[0016] Or, the high-voltage interface of the fast thyristor chip and / or the high-voltage interface of the fast diode chip is connected to the voltage output port of a chopper circuit.

[0017] Preferably, the high-voltage interface is an integrated interface of a first high-voltage interface and a second high-voltage interface, or the high-voltage interface is an integrated interface of a first high-voltage interface and a second high-voltage connection point.

[0018] Preferably, the fast diode chip also includes a first fast diode and a second fast diode;

[0019] The input end of the first fast diode is connected to the high-voltage interface of the fast diode chip; the output end of the first fast diode is respectively connected to the first high-voltage connection point of the fast diode chip and the control connection point of the fast diode chip;

[0020] The input end of the second fast diode is connected to the high-voltage interface of the fast diode chip; the output end of the second fast diode is connected to the second high-voltage connection point of the fast diode chip.

[0021] Preferably, the first high-voltage connection point of the fast diode chip includes a first high-voltage connection sub-point and a second high-voltage connection sub-point;

[0022] The first high-voltage connection point of the fast thyristor chip includes a first high-voltage connection sub-point and a second high-voltage connection sub-point;

[0023] The output end of the first fast diode is respectively connected to the first high-voltage connection sub-point, the second high-voltage connection sub-point and the control connection point of the fast diode chip;

[0024] The first high-voltage connection sub-point of the first high-voltage connection point of the fast diode chip is connected to the first high-voltage connection sub-point of the first high-voltage connection point of the fast thyristor chip; the second high-voltage connection sub-point of the first high-voltage connection point of the fast diode chip and the second high-voltage connection sub-point of the first high-voltage connection point of the fast thyristor chip are connected.

[0025] Preferably, the parameter values of the fast thyristor chip are set values; the parameter values include the working voltage value, the working current value, the frequency value, the control voltage value, the control current value, and the conduction voltage drop value.

[0026] Preferably, the set value of the working voltage value is 2000V; the set value of the working current value is 500A; the set value of the frequency value is 1KHz; the set value of the control voltage value is 0.3V; the set value of the control current value is less than 100mA; the set value of the conduction voltage drop value is 0.7V.

[0027] Preferably, the connection method between the control connection point of the fast thyristor chip and the control connection point of the fast diode chip and the connection method between the high-voltage connection point of the fast thyristor chip and the high-voltage connection point of the fast diode chip are both plugging or welding.

[0028] Preferably, the number of the fast thyristor chips and the number of the fast diode chips are both multiple.

[0029] According to the specific embodiments provided by the present invention, the present invention discloses the following technical effects:

[0030] The thyristor composite device provided by the present invention, by adopting a fast thyristor chip, a fast diode chip, and insulating ceramics, and integrating both the fast thyristor chip and the fast diode chip on the insulating ceramics, can greatly reduce the volume of the entire device, reduce the weight of the entire device, and increase the service life.

[0031] Moreover, through the setting of each connection point, the problem of poor contact can be avoided, thereby improving the control effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required in the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention, and those of ordinary skill in the art can also obtain other drawings based on these drawings without creative efforts.

[0033] Figure 1 It is the first structural schematic diagram of the thyristor composite device of the present invention;

[0034] Figure 2 It is the second structural schematic diagram of the thyristor composite device of the present invention.

[0035] Symbol Description:

[0036] A1 - First high - voltage interface, A2 - Second high - voltage interface, k11 - First high - voltage connection sub - point of the fast diode chip, k12 - Second high - voltage connection sub - point of the fast diode chip, k2 - Second high - voltage connection point of the fast diode chip, G1 - Control connection point of the fast diode chip, k’11 - First high - voltage connection sub - point of the fast thyristor chip, k’12 - Second high - voltage connection sub - point of the fast thyristor chip, k’2 - Second high - voltage connection point of the fast thyristor chip, G’1 - Control connection point of the fast thyristor chip. Detailed implementation mode

[0037] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0038] The purpose of the present invention is to provide a thyristor composite device to solve the problems of large volume, heavy weight, short service life, poor control effect, etc. existing in the existing thyristor composite modules.

[0039] To make the above - mentioned objects, features and advantages of the present invention more obvious and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific implementation modes.

[0040] Figure 1 It is the first structural schematic diagram of the thyristor composite device of the present invention. Figure 2 It is the second structural schematic diagram of the thyristor composite device of the present invention. As Figure 1 and 2 shown, a thyristor composite device includes: a fast thyristor chip, a fast diode chip and an insulating ceramic (not shown in the figure).

[0041] Both the fast thyristor chip and the fast diode chip are integrated on the insulating ceramic.

[0042] Both the fast thyristor chip and the fast diode chip include a control connection point and a high - voltage connection point.

[0043] The control connection point of the fast thyristor chip is connected to the control connection point of the fast diode chip. The high - voltage connection point of the fast thyristor chip is connected to the high - voltage connection point of the fast diode chip.

[0044] Both the fast thyristor chip and the fast diode chip include a first high - voltage connection point and a second high - voltage connection point.

[0045] The first high-voltage connection point of the fast thyristor chip is connected to the first high-voltage connection point of the fast diode chip. The second high-voltage connection point k'2 of the fast thyristor chip is connected to the second high-voltage connection point k2 of the fast diode chip.

[0046] Both the fast thyristor chip and the fast diode chip further include: a high-voltage interface.

[0047] The high-voltage interface of the fast thyristor chip and / or the high-voltage interface of the fast diode chip is connected to the voltage output port of the external control system.

[0048] Or, the high-voltage interface of the fast thyristor chip and / or the high-voltage interface of the fast diode chip is connected to the voltage output port of the chopper circuit.

[0049] The high-voltage interface is an integrated interface of the first high-voltage interface A1 (A'1) and the second high-voltage interface A2 (A'2), or the high-voltage interface is an integrated interface of the first high-voltage interface A1 (A'1) and the second high-voltage connection point k2 of the fast diode chip.

[0050] The fast diode chip further includes a first fast diode and a second fast diode.

[0051] The input end of the first fast diode is connected to the high-voltage interface of the fast diode chip. The output end of the first fast diode is respectively connected to the first high-voltage connection point and the control connection point G1 of the fast diode chip.

[0052] The input end of the second fast diode is connected to the high-voltage interface of the fast diode chip. The output end of the second fast diode is connected to the second high-voltage connection point k2 of the fast diode chip.

[0053] The first high-voltage connection point of the fast diode chip includes a first high-voltage connection sub-point k11 and a second high-voltage connection sub-point k12.

[0054] The first high-voltage connection point of the fast thyristor chip includes a first high-voltage connection sub-point k'11 and a second high-voltage connection sub-point k'12.

[0055] The output end of the first fast diode is respectively connected to the first high-voltage connection sub-point k11, the second high-voltage connection sub-point k12 and the control connection point G1 of the fast diode chip.

[0056] The first high-voltage connection sub-point k11 of the first high-voltage connection point of the fast diode chip is connected to the first high-voltage connection sub-point k'11 of the first high-voltage connection point of the fast thyristor chip. The second high-voltage connection sub-point k12 of the first high-voltage connection point of the fast diode chip is connected to the second high-voltage connection sub-point k'12 of the first high-voltage connection point of the fast thyristor chip.

[0057] The parameter values of the fast thyristor chip are set values. The parameter values include the working voltage value, the working current value, the frequency value, the control voltage value, the control current value, and the conduction voltage drop value. Among them, the set value of the working voltage value is 2000V. The set value of the working current value is 500A. The set value of the frequency value is 1KHz. The set value of the control voltage value is 0.3V. The set value of the control current value is less than 100mA. The set value of the conduction voltage drop value is 0.7V.

[0058] The connection mode between the control connection point G’1 of the fast thyristor chip and the control connection point G1 of the fast diode chip, and the connection mode between the high-voltage connection point of the fast thyristor chip and the high-voltage connection point of the fast diode chip are both plugging or welding.

[0059] The number of fast thyristor chips and the number of fast diode chips are both multiple.

[0060] As the first embodiment of the present invention:

[0061] As Figure 1 shown, the input end of the first fast diode is connected to the high-voltage interface of the fast diode chip (this high-voltage interface includes the first high-voltage interface A1 and the second high-voltage interface A2). The output end of the first fast diode is respectively connected to the first high-voltage connection sub-point k11, the second high-voltage connection sub-point k12, and the control connection point G1. The first high-voltage connection sub-point k11 of the fast diode chip is connected to the first high-voltage connection sub-point k’11 of the fast thyristor chip. The second high-voltage connection sub-point k12 of the fast diode chip is connected to the second high-voltage connection sub-point k’12 of the fast thyristor chip. The control connection point G1 of the fast diode chip is connected to the control connection point G’1 of the fast thyristor chip.

[0062] The input end of the second fast diode is connected to the high-voltage interface of the fast diode chip (this high-voltage interface includes the first high-voltage interface A1 and the second high-voltage interface A2). The output end of the second fast diode is connected to the second high-voltage connection point k2 of the fast diode chip. The second high-voltage connection point k2 of the fast diode chip is connected to the second high-voltage connection point k’2 of the fast thyristor chip.

[0063] The high-voltage interfaces of the fast thyristor chip (this high-voltage interface includes the first high-voltage interface A’1 and the second high-voltage interface A’2) and the high-voltage interfaces of the fast diode chips can both be connected to the voltage output port of an external control system or a chopper circuit. The external control system referred to in the present invention is all electrical equipment that can adopt a thyristor compliance module in the prior art.

[0064] As the second embodiment of the present invention:

[0065] As Figure 2As shown, in this embodiment of the present invention, the high-voltage interface in the above embodiment is replaced with an integrated interface of the first high-voltage interface A1 and the second high-voltage connection point K2 of the fast diode chip. At the same time, the input end of the second fast diode is connected to the second high-voltage interface A2 of the fast diode chip, and the input end of the second fast diode is connected to the integrated interface of the first high-voltage interface A1 and the second high-voltage connection point K2 of the fast diode chip. The input end of the first fast diode is connected to the integrated interface of the fast diode chip.

[0066] Except for the above connection relationships and interface changes, other parts are exactly the same as the connection relationships disclosed in the first embodiment.

[0067] In addition, as Figure 1 and Figure 2 shown, in the technical solution provided by the present invention, there are multiple first high-voltage connection points and high-voltage interfaces on the fast thyristor chip, so that multiple fast diode chips can be installed on one fast thyristor chip. Furthermore, while improving the device integration, it is convenient to replace the connection interface and improve the service life of the device.

[0068] The process steps of the thyristor composite device provided by the present invention are as follows:

[0069] Screen printing → Automatic chip mounting → Vacuum reflow soldering → X-ray defect detection → Automatic wire bonding → Housing reverse molding → Housing injection molding → Terminal installation → Function testing.

[0070] The process conditions include design process and process technology. Among them, the design process includes:

[0071] Performance design: Design channels for stable short-circuit current. Design for tight and reliable die arrangement. High-voltage design: Design thickness and concentration. Boundary design. High-efficiency control design.

[0072] The process technology includes: Deep trench scribing. Epitaxial resistivity and thickness. Thin silicon wafer processing. High-energy implantation. Low temperature, activation.

[0073] Compared with the thyristor compliance module disclosed in the prior art, the thyristor composite device provided by the present invention has also been improved as follows:

[0074] 1. The device includes a fast thyristor chip and a fast diode chip. The designed installation hole positions adopt the general international standard for installing the 62X108 size, which is conducive to the substitution and interchangeable installation with other old models. Each chip uses multiple leads in parallel for output, and multiple wafers have balanced current output, with stable performance, consistent temperature rise, improving the efficiency of each wafer body. Each chip in the device is based on an insulating ceramic, and both the internal conductive part and heat dissipation adopt welding methods, greatly enhancing the electrical conductivity and thermal conductivity. The outer shell is encapsulated according to the 62X106 standard, and the installation and fixing hole positions are universal for 100A - 800A current, which is conducive to the interchange and substitution of modules, further improving the product quality and standard within a limited space. The parallel connection of each chip in the device expands the usage range, reduces the waste of wafers, and selects a suitable module according to the required current according to technical requirements. The circuit design is conducive to high-precision control. The parallel-connected chips can also reduce the conduction voltage drop. The output of each chip adopts the method of welding with multiple wires, which can improve the efficiency of the overall device to be applied to various different environments, and the usage range is more general and extensive.

[0075] 2. The device internally adopts the method of multi-chip parallel connection, increasing the cross-sectional area of conduction (skin effect of high-frequency current) to reduce losses when working in high-frequency circuits. The parallel connection of multiple chips increases the load-bearing capacity of the module and also increases the heat dissipation area, enabling the module to work reliably. The usage amount of chip wafers is reduced by more than 1 / 3 compared with rare technologies, reducing the production cost. Moreover, in mass production, multiple processes such as bolt installation can be saved, improving the production efficiency of the entire device.

[0076] 3. The wiring ports of the device adopt a parallel output mode, with the same height and equal distance for each electrode, to facilitate the installation and operation of wire copper plates. Moreover, the fixing holes adopt a symmetric installation method to make the disassembly and installation convenient and fast. In addition, the connection points adopt welding or plugging connection methods, which are convenient for different usage environment ranges.

[0077] In this specification, each embodiment is described in a progressive manner. The key point of each embodiment is to illustrate the differences from other embodiments. For the same and similar parts among the embodiments, reference can be made to each other.

[0078] Specific examples are used in this article to elaborate on the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method and its core idea of the present invention; at the same time, for those of ordinary skill in the art, according to the idea of the present invention, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be construed as a limitation to the present invention.

Claims

1. A thyristor composite device, characterized in that, it includes: a fast thyristor chip, a fast diode chip and an insulating ceramic; both the fast thyristor chip and the fast diode chip are integrated on the insulating ceramic; both the fast thyristor chip and the fast diode chip include a control connection point and a high-voltage connection point; the control connection point of the fast thyristor chip is connected to the control connection point of the fast diode chip; the high-voltage connection point of the fast thyristor chip is connected to the high-voltage connection point of the fast diode chip; both the fast thyristor chip and the fast diode chip include a first high-voltage connection point and a second high-voltage connection point; the first high-voltage connection point of the fast thyristor chip is connected to the first high-voltage connection point of the fast diode chip; the second high-voltage connection point of the fast thyristor chip is connected to the second high-voltage connection point of the fast diode chip; both the fast thyristor chip and the fast diode chip further include: a high-voltage interface; the high-voltage interface of the fast thyristor chip and the high-voltage interface of the fast diode chip are connected to the voltage output port of an external control system; or, the high-voltage interface of the fast thyristor chip and the high-voltage interface of the fast diode chip are connected to the voltage output port of a chopper circuit; the fast diode chip further includes a first fast diode and a second fast diode; the input end of the first fast diode is connected to the high-voltage interface of the fast diode chip; the output end of the first fast diode is respectively connected to the first high-voltage connection point of the fast diode chip and the control connection point of the fast diode chip; the input end of the second fast diode is connected to the high-voltage interface of the fast diode chip; the output end of the second fast diode is connected to the second high-voltage connection point of the fast diode chip.

2. The thyristor composite device according to claim 1, characterized in that, the high-voltage interfaces of the fast thyristor chip and the fast diode chip are integrated interfaces of a first high-voltage interface and a second high-voltage interface, or the high-voltage interfaces of the fast thyristor chip and the fast diode chip are integrated interfaces of a first high-voltage interface and a second high-voltage connection point.

3. The thyristor composite device according to claim 1, characterized in that, the first high-voltage connection point of the fast diode chip includes a first high-voltage connection sub-point and a second high-voltage connection sub-point; the first high-voltage connection point of the fast thyristor chip includes a first high-voltage connection sub-point and a second high-voltage connection sub-point; the output end of the first fast diode is respectively connected to the first high-voltage connection sub-point, the second high-voltage connection sub-point and the control connection point of the fast diode chip; the first high-voltage connection sub-point of the first high-voltage connection point of the fast diode chip is connected to the first high-voltage connection sub-point of the first high-voltage connection point of the fast thyristor chip; the second high-voltage connection sub-point of the first high-voltage connection point of the fast diode chip is connected to the second high-voltage connection sub-point of the first high-voltage connection point of the fast thyristor chip.

4. The thyristor composite device according to claim 1, It is characterized in that the parameter values of the fast thyristor chip are set values; the parameter values include the working voltage value, the working current value, the frequency value, the control voltage value, the control current value, and the conduction voltage drop value.

5. The thyristor composite device according to claim 4, It is characterized in that the set value of the working voltage value is 2000V; the set value of the working current value is 500A; the set value of the frequency value is 1KHz; the set value of the control voltage value is 0.3V; the set value of the control current value is less than 100mA; the set value of the conduction voltage drop value is 0.7V.

6. The thyristor composite device according to claim 1, It is characterized in that the connection mode of the control connection point of the fast thyristor chip and the control connection point of the fast diode chip and the connection mode of the high-voltage connection point of the fast thyristor chip and the high-voltage connection point of the fast diode chip are both plugging or welding.

7. The thyristor composite device according to claim 1, It is characterized in that the numbers of both the fast thyristor chips and the fast diode chips are multiple.

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