Sensor unit and method for detecting cracks

Abstract

The present application relates to a sensor unit and a method for detecting cracks. The sensor unit includes a hole, a sensing area, and a crack detector, wherein the sensing area is formed around the hole, wherein at least one sensor is located in the sensing area, and the crack detector is configured to output a first crack signal if a comparison value obtained by comparing a detection value from the at least one sensor with a reference value exceeds an error range.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2019-0023910, filed on February 28, 2019, which is hereby incorporated by reference in its entirety. Technical Field

[0003] Aspects of some exemplary embodiments of the present disclosure are directed to a sensor unit, a display device including the sensor unit, and a method of detecting a crack using the sensor unit. Background Art

[0004] As the information society develops, various demands on display devices are increasing. Accordingly, various types of display devices are available, such as liquid crystal display (LCD) devices, plasma display panel (PDP) devices, and organic light emitting display (OLED) devices.

[0005] To expand the display area, the display device may include a hole in the display area in which a sensor, such as a camera device, is positioned.

[0006] During the process of forming such holes in the display device, fine cracks may occur in the substrate of the display device or in the layers stacked thereon. When this occurs, moisture or the like may penetrate into the display device through the cracks, which may impair the function of the display device due to, for example, the failure of pixels of the display device to emit light, incorrect or undesired pixel light emission, etc.

[0007] The above information disclosed in this Background section is only for enhancement of understanding of the background technology and therefore it may contain information that does not constitute prior art. Summary of the invention

[0008] Aspects of some exemplary embodiments of the present disclosure include a sensor unit, a display device including the sensor unit, and a method of detecting a crack using the sensor unit.

[0009] It should be noted that the embodiments of the present disclosure are not limited to the above-mentioned features, and other features of the present invention will be more apparent to those skilled in the art from the following description.

[0010] Some exemplary embodiments of the present invention include a sensor unit. The sensor unit includes a hole, a sensing area, and a crack detector, wherein the sensing area is formed around the hole, wherein at least one sensor is located in the sensing area, and the crack detector is configured to output a first crack signal if a comparison value obtained by comparing a detection value from the at least one sensor with a reference value exceeds an error range.

[0011] According to some exemplary embodiments of the present disclosure, cracks that may occur during a process of forming a hole in a display device can be detected, thereby allowing easy determination of whether there is a defect in the display device. The sensor unit may also sense a user's touch.

[0012] According to some exemplary embodiments of the present disclosure, an area where cracks may occur during a process of forming a hole is set as a sensing area, and thus the cracks can be effectively detected to determine whether there is a defect. In addition, more than one sensing area can be set to detect cracks, thereby determining whether there is a crack causing a defect in the display device. In addition, it is possible to determine whether the crack expands and when the crack occurs by performing detection at several time points.

[0013] It should be noted that the effects of the present disclosure are not limited to the above-mentioned effects, and other effects of the present disclosure will be apparent to those skilled in the art through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate aspects of some exemplary embodiments of the invention and together with the description serve to explain the inventive concepts.

[0015] Figure 1 is a perspective view of a display device according to some exemplary embodiments of the present disclosure.

[0016] Figure 2 is along Figure 1 A cross-sectional view taken along line II'.

[0017] Figure 3 Some exemplary embodiments of the present disclosure are shown in Figure 2 FIG. 1 is a diagram of an example of a display unit.

[0018] Figure 4 It is shown that the Figure 3 Circuit diagram of a pixel in a display unit.

[0019] Figure 5 Some exemplary embodiments of the present disclosure are shown in Figure 2 FIG. 1 is a diagram of an example of a sensor unit.

[0020] Figure 6 yes Figure 5 An enlarged view of a portion A of the display device shown in FIG.

[0021] Figure 7 is along Figure 6 A cross-sectional view taken along line II-II'.

[0022] Figure 8 is along Figure 6 A cross-sectional view taken along line III-III'.

[0023] Fig. 9 is a diagram schematically illustrating a region in which a hole is formed and a crack detector according to some exemplary embodiments of the present disclosure.

[0024] Fig.10 is a block diagram of a crack detector of a sensor unit according to some exemplary embodiments of the present disclosure.

[0025] Fig.11 is a diagram schematically illustrating a region in which a hole is formed and a crack detector according to some exemplary embodiments of the present disclosure.

[0026] Fig.12 is a diagram schematically illustrating a region in which a hole is formed and a crack detector in a sensor unit according to some exemplary embodiments of the present disclosure.

[0027] Fig.13 is a diagram schematically illustrating a region in which a hole is formed and a crack detector in a sensor unit according to some exemplary embodiments of the present disclosure.

[0028] Fig.14 is a diagram schematically illustrating a region in which a hole is formed and a crack detector in a sensor unit according to some exemplary embodiments of the present disclosure.

[0029] Fig.15 is a block diagram of a crack detector of a sensor unit according to some exemplary embodiments of the present disclosure.

[0030] Fig.16 is a block diagram for illustrating a method of detecting a crack by a sensor unit according to some exemplary embodiments of the present disclosure.

[0031] Fig.17 is a block diagram for illustrating a method for detecting cracks according to some exemplary embodiments of the present disclosure.

[0032] Fig.18 is a diagram schematically illustrating a region in which a hole is formed and a crack detector according to some exemplary embodiments of the present disclosure.

[0033] Fig.19 is a diagram schematically illustrating a region in which a hole is formed and a crack detector according to some exemplary embodiments of the present disclosure.

[0034] Fig. 20 is a diagram schematically illustrating a region in which a hole is formed and a crack detector according to some exemplary embodiments of the present disclosure.

[0035] Fig.21 is a diagram schematically illustrating a region in which a hole is formed and a crack detector according to some exemplary embodiments of the present disclosure.

[0036] Fig. 22 is a diagram schematically illustrating a region in which a hole is formed and a crack detector according to some exemplary embodiments of the present disclosure.

[0037] Fig.23 is a diagram schematically illustrating a region in which a hole is formed and a crack detector according to some exemplary embodiments of the present disclosure. DETAILED DESCRIPTION

[0038] In the following description, for the purpose of explanation, various details are set forth to provide a more thorough understanding of various exemplary embodiments of the present invention. As used herein, "embodiment" is a non-limiting example of one or more devices or methods using the inventive concept disclosed herein. However, it is apparent that various exemplary embodiments may be practiced without these specific details or with one or more equivalent arrangements. In other examples, known structures and devices are shown in block diagram form to avoid unnecessary confusion of various exemplary embodiments. In addition, various exemplary embodiments may be different, but need not be exclusive. For example, without departing from the inventive concept, the specific shape, configuration and characteristics of the exemplary embodiment may be used or implemented in another exemplary embodiment.

[0039] Unless otherwise specified, the exemplary embodiments shown should be understood as providing exemplary features of different details of some ways in which the inventive concept can be implemented in practice. Therefore, unless otherwise specified, the features, components, modules, layers, films, panels, regions and / or aspects of various embodiments (hereinafter individually or collectively referred to as "elements") can be combined, separated, interchanged and / or rearranged in other ways without departing from the inventive concept.

[0040] The use of cross hatching and / or shading in the drawings is generally provided to clarify the boundaries between adjacent elements. Thus, unless otherwise stated, the presence or absence of cross hatching or shading will not convey or indicate any preference or requirement for a particular material, material property, size, ratio, commonality between the elements shown and / or any other characteristics, attributes, properties, etc. of the elements. In addition, in the drawings, the size and relative size of the elements may be exaggerated for the purpose of clarity and / or description. When the exemplary embodiments can be implemented differently, the specific process sequence may be performed differently from the described sequence. For example, two processes described in succession may be performed substantially simultaneously or in an order opposite to the described order. In addition, similar reference numerals represent similar elements.

[0041] When an element (e.g., a layer) is referred to as being "on," "connected to," or "coupled to" another element or layer, the element may be directly on, directly connected to, or directly coupled to another element or layer, or there may be an intervening element or layer. However, when an element or layer is referred to as being "directly" "on," "directly connected to," or "directly coupled to" another element or layer, there is no intervening element or layer. For this reason, the term "connected" may indicate a physical connection, an electrical connection, and / or a fluid connection with or without an intervening element. In addition, the D1 axis, the D2 axis, and the D3 axis are not limited to the three axes of a rectangular coordinate system (such as the x-axis, the y-axis, and the z-axis), and may be interpreted in a broader sense. For example, the D1 axis, the D2 axis, and the D3 axis may be perpendicular to each other, or may represent different directions that are not perpendicular to each other. For the purposes of this disclosure, "at least one of X, Y, and Z" and "at least one selected from the group consisting of X, Y, and Z" may be interpreted as any combination of only X, only Y, only Z, or two or more of X, Y, and Z, such as, for example, XYZ, XYY, YZ, and ZZ. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0042] Although the terms "first", "second", etc. may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another element. Therefore, without departing from the teachings of the present disclosure, the first element discussed below may be referred to as the second element.

[0043] Spatially relative terms, such as "beneath," "below," "under," "lower," "above," "upper," "over," "higher," "side" (e.g., as in "sidewall"), and the like, may be used herein for descriptive purposes, and thus, to describe the relationship of one element to another element(s) as shown in the figures. Spatially relative terms are intended to encompass different orientations of the device in use, operation, and / or manufacture in addition to the orientations depicted in the figures. For example, if the device in the figures is flipped, elements described as being "below" or "beneath" other elements or features would subsequently be oriented "above" the other elements or features. Thus, the exemplary term "below" may include both orientations of above and below. Furthermore, the device may be otherwise oriented (e.g., rotated 90 degrees or in other orientations), and thus, the spatially relative descriptors used herein should be interpreted accordingly.

[0044] The terms used herein are for the purpose of describing specific embodiments and are not intended to be limiting. Unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" as used herein are also intended to include the plural forms. In addition, when used in this specification, the terms "comprises", "comprising", "includes" and / or "including" indicate the presence of stated features, wholes, steps, operations, elements, parts and / or clusters thereof, but do not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, parts and / or clusters thereof. It is also noted that, as used herein, the terms "substantially", "about" and other similar terms are used as terms of approximation rather than terms of degree, and thus, are used to allow for the inherent deviations in the measured values, calculated values ​​and / or provided values ​​that will be recognized by those of ordinary skill in the art.

[0045] Various exemplary embodiments are described herein with reference to cross-sectional views and / or exploded views that are schematic illustrations of exemplary embodiments and / or intermediate structures. Thus, variations in the shapes of the illustrations due to, for example, manufacturing techniques and / or tolerances should be expected. Therefore, the exemplary embodiments disclosed herein should not necessarily be interpreted as being limited to the specific illustrated shapes of the regions, but rather include deviations in shape due to, for example, manufacturing. In this way, the regions shown in the figures may be schematic in nature, and the shapes of these regions may not reflect the actual shapes of the regions of the device, and thus are not necessarily intended to be limiting.

[0046] As is customary in the art, some exemplary embodiments are described and shown in the accompanying drawings for functional blocks, units and / or modules. It will be understood by those skilled in the art that these blocks, units and / or modules are physically implemented by electrical circuits (or optical circuits) such as logic circuits, discrete components, microprocessors, hard-wired circuits, memory elements, wiring connectors, etc., which can be formed using semiconductor-based manufacturing technology or other manufacturing technology. In the case where the blocks, units and / or modules are implemented by microprocessors or other similar hardware, they can be programmed and controlled by software (e.g., microcode) to perform the various functions discussed herein, and they can be selectively driven by firmware and / or software. It is also conceivable that each block, unit and / or module can be implemented by dedicated hardware, or can be implemented as a combination of dedicated hardware for performing some functions and processors (e.g., one or more programmed microprocessors and associated circuits) for performing other functions. In addition, without departing from the scope of the inventive concept, each block, unit and / or module in some exemplary embodiments can be physically separated into two or more interactive and discrete blocks, units and / or modules. Furthermore, without departing from the scope of the inventive concept, blocks, units and / or modules in some exemplary embodiments may be physically combined into more complex blocks, units and / or modules.

[0047] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those commonly understood by those skilled in the art to which the present disclosure belongs. Unless explicitly defined as such herein, terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and should not be interpreted in an idealized or overly formal sense.

[0048] It will be apparent to those skilled in the art that various modifications and changes may be made to the disclosed embodiments without departing from the spirit and scope of the inventive concept. Therefore, the inventive concept is intended to cover modifications and changes of the disclosed embodiments that make them fall within the scope of the appended claims and their equivalents.

[0049] Throughout the specification, the same reference numerals are used for the same or like elements.

[0050] Hereinafter, aspects of some exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings.

[0051] Figure 1 is a perspective view of a display device according to some exemplary embodiments of the present disclosure. Figure 2 is along Figure 1 A cross-sectional view taken along line II'.

[0052] Reference Figure 1 to Figure 2 The display device 10 is used to display moving images or still images. The display device 10 can be used as a display screen of portable electronic devices such as mobile phones, smart phones, tablet computers, smart watches, watch phones, mobile communication terminals, electronic notebooks, electronic books, portable multimedia players (PMPs), navigation devices, and ultra mobile PCs (UMPCs), and a display screen of various products such as televisions, notebook computers, monitors, billboards, and the Internet of Things.

[0053] The display device 10 may be one of an organic light emitting display device, a liquid crystal display device, a plasma display device, a field emission display device, an electrophoretic display device, an electrowetting display device, a quantum dot light emitting display device, a micro LED display device, etc. In the following description, an organic light emitting display device will be described as an example of the display device 10. However, it should be understood that the present disclosure is not limited thereto.

[0054] As used herein, the terms “above”, “top” and “upper surface” refer to the upper side of the display device 10, i.e., the side indicated by the arrow in the z-axis direction, and the terms “below”, “bottom” and “lower surface” refer to the lower side of the display device 10, i.e., the opposite side in the z-axis direction. As used herein, the terms “left” side, “right” side, “upper” side and “lower” side indicate relative positions when the display device 10 is viewed from the top. For example, “left side” refers to the direction opposite to the direction indicated by the arrow of the x-axis, “right side” refers to the direction indicated by the arrow of the x-axis, “upper side” refers to the direction opposite to the direction indicated by the arrow of the y-axis, and “lower side” refers to the direction indicated by the arrow of the y-axis.

[0055] The display device 10 may be formed in a rectangular plane having a short side in a first direction (x-axis direction) and a long side in a second direction (y-axis direction) intersecting the first direction (x-axis direction). The corner where the short side in the first direction (x-axis direction) intersects the long side in the second direction (y-axis direction) may be rounded and have a curvature (e.g., a predetermined curvature). When viewed from the top, although Figure 1 The display device 10 shown in FIG. 1 has a rectangular shape with rounded corners, but this is merely illustrative. The display device 10 may have any other polygonal shape, a circular shape, or an elliptical shape.

[0056] The display device 10 may include a display area DA and a non-display area NDA.

[0057] In the display area DA, for example, a plurality of pixels are arranged in a matrix arrangement so that an image can be displayed. According to some exemplary embodiments, the display area DA may include emission areas of different colors, and one emission area may be associated with a single pixel. The display area DA may also be used as an area for recognizing a user's touch input and an area for displaying an image.

[0058] The non-display area NDA is defined as an area where no image is displayed. According to some exemplary embodiments, the non-display area NDA includes a first non-display area NDA1 surrounding the display area DA and a second non-display area NDA2 located inside the display area DA. However, it should be understood that the present disclosure is not limited thereto. The shape of the display area DA and the shape of the first non-display area NDA1 may be relatively designed. In some parts of the first non-display area NDA1, a speaker module, a camera module, etc. may be positioned.

[0059] According to some exemplary embodiments, the periphery of the second non-display area NDA2 may be surrounded by the display area DA. In other words, the second non-display area NDA2 may be located inside the display area DA. However, it should be understood that the present disclosure is not limited thereto. According to some exemplary embodiments, a portion of the second non-display area NDA2 may be surrounded by the display area DA, and another portion of the second non-display area NDA2 may be connected to the first non-display area NDA1.

[0060] The second non-display area NDA2 is defined as an area where no image is displayed. Figure 1 The second non-display area NDA2 in the example shown in FIG. 4 has a circular shape, but this is merely illustrative. The second non-display area NDA2 may have any of various shapes, such as an elliptical shape and a polygonal shape.

[0061] Reference Figure 2 The display device 10 may include a display unit DU, a sensor unit SU, and a cover window CW, wherein the display unit DU has a hole AH, a substrate SUB, a thin film transistor layer TFTL arranged on the substrate SUB, a light emitting element layer EML, and a thin film encapsulation layer TFEL.

[0062] The hole AH may be formed in the second non-display area NDA2 of the display device 10. For example, the second non-display area NDA2 and the hole AH may overlap each other in the third direction (z-axis direction). According to some exemplary embodiments, in a cross section, the width of the hole AH in the first direction (x-axis direction) may be less than the width of the second non-display area NDA2 in the first direction (x-axis direction). However, it should be understood that the embodiments of the present disclosure are not limited thereto. In a cross section, the width of the hole AH in the first direction (x-axis direction) may be equal to the width of the second non-display area NDA2 in the first direction (x-axis direction).

[0063] According to some exemplary embodiments, when viewed from the top, the shape of the hole AH may be consistent with the shape of the second non-display area NDA2. For example, when the second non-display area NDA2 when viewed from the top has a circular shape, the hole AH when viewed from the top may also have a circular shape. However, it should be understood that the present disclosure is not limited thereto. When viewed from the top, the shape of the hole AH may be different from the shape of the second non-display area NDA2.

[0064] According to some exemplary embodiments, the camera module and the sensor module may be located in the hole AH. The sensor module may include at least one of an illumination sensor, a proximity sensor, an infrared sensor, and an ultrasonic sensor. Since the camera module and the sensor module are located inside the hole AH, the display area DA may be extended to an area surrounding the camera module and the sensor module.

[0065] The substrate SUB may be made of an insulating material such as glass, quartz or a polymer resin. Examples of polymer materials may include polyethersulfone (PES), polyacrylate (PA), polyarylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyallyl, polyimide (PI), polycarbonate (PC), cellulose triacetate (CAT), cellulose acetate propionate (CAP), or a combination thereof. Alternatively, the substrate SUB may include a metal material.

[0066] The substrate SUB may be a rigid substrate or a flexible substrate that can be bent, folded, rolled, etc. When the substrate SUB is a flexible substrate, it may be formed of polyimide (PI), but is not limited thereto.

[0067] The thin film transistor layer TFTL may be located on the substrate SUB. Scan lines, data lines, power lines, scan control lines, routing lines connecting pads and data lines, and thin film transistors in pixels may be formed in the thin film transistor layer TFTL. Each of the thin film transistors may include a gate electrode, a semiconductor layer, a source electrode, and a drain electrode. Figure 3 As shown in , when the scan driver 110 is formed in the non-display area NDA of the display unit DU, the scan driver 110 may include a thin film transistor.

[0068] The thin film transistor layer TFTL may be located in the display area DA and the non-display area NDA. For example, the thin film transistors in the pixels in the thin film transistor layer TFTL, the scan lines, the data lines, and the power lines may be located in the display area DA. The scan control lines and the link lines in the thin film transistor layer TFTL may be located in the non-display area NDA.

[0069] The light emitting element layer EML may be located on the thin film transistor layer TFTL. The light emitting element layer EML may include a pixel and a pixel defining layer, wherein the pixel includes a first electrode, an emission layer, and a second electrode. The emission layer may be an organic emission layer containing an organic material. Then, the emission layer may include a hole transport layer, an organic emission layer, and an electron transport layer. When a voltage is applied to the first electrode through the thin film transistor in the thin film transistor layer TFTL and a cathode voltage is applied to the second electrode, holes and electrons move to the organic emission layer through the hole transport layer and the electron transport layer, respectively, whereby they are combined in the organic emission layer to emit light. The pixel in the light emitting element layer EML may be located in the display area DA.

[0070] The thin film encapsulation layer TFEL may be located on the light emitting element layer EML. The thin film encapsulation layer TFEL is used to prevent or reduce the penetration of oxygen or moisture into the light emitting element layer EML. To this end, the thin film encapsulation layer TFEL may include at least one inorganic layer. The inorganic layer may be, but is not limited to, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. In addition, the thin film encapsulation layer TFEL protects the light emitting element layer EML from foreign matter such as dust. To this end, the thin film encapsulation layer TFEL may include at least one organic layer. The organic layer may be formed of or include an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin, but is not limited thereto.

[0071] The thin film encapsulation layer TFEL may be located in the display area DA and the non-display area NDA except the hole AH. For example, the thin film encapsulation layer TFEL may be located in the display area DA, the first non-display area NDA1, and a portion of the second non-display area NDA2 to cover the light emitting element layer EML and the thin film transistor layer TFTL in the non-display area NDA.

[0072] The sensor unit SU may be located on the thin film encapsulation layer TFEL. The sensor unit SU may not only perform the touch function of the display device 10, but also perform the function of detecting cracks of the display device 10. For example, if a crack occurs in the thin film encapsulation layer TFEL, moisture or the like may penetrate into the display unit DU through the crack, so that the pixel of the display unit DU may not emit light or the wrong pixel may incorrectly emit light. If a crack occurs in the thin film encapsulation layer TFEL, it will also cause a crack in the sensor unit SU. Accordingly, the sensor unit SU may sense the crack of the sensor unit SU to detect the crack in the thin film encapsulation layer TFEL. Therefore, it may be relatively easy to determine whether the display device 10 has a defect. In addition, because the sensor unit SU is directly located on the thin film encapsulation layer TFEL, an additional touch panel or structure for sensing cracks may not be used, thereby reducing the thickness of the display device 10 and effectively utilizing the display area DA. In some exemplary embodiments, the sensor unit SU may be a touch panel.

[0073] The sensor unit SU may include a sensor for sensing a user's touch and a crack using an electrical signal, a pad, and a sensor line for connecting the sensor. For example, the sensor unit SU may sense a user's touch and a crack in the display device 10 based on a detection value of a self-capacitance sensor or a mutual-capacitance sensor.

[0074] In some exemplary embodiments, Figure 5 As shown in , the sensor of the sensor unit SU may be located in the display area DA and in the sensor area SSA overlapping the second non-display area NDA2 except the hole AH. Therefore, when the second non-display area NDA2 is larger than the hole AH, the sensor area SSA may include not only the display area DA but also a portion of the second non-display area NDA2 that does not overlap with the hole AH in the third direction (z-axis direction). Figure 5 As shown in , the sensor line of the sensor unit SU may be located in the sensor peripheral area SPA overlapping the first non-display area NDA1. The hole AH may penetrate the display unit DU and the sensor unit SU of the display device 10. For example, the hole AH may be formed in each of the substrate SUB, the thin film transistor layer TFTL located on the substrate SUB, the light emitting element layer EML located on the thin film transistor layer TFTL, the thin film encapsulation layer TFEL located on the light emitting element layer EML, and the sensor unit SU.

[0075] The cover window CW may be located on the sensor unit SU and the hole AH. The cover window CW may protect the display unit DU and the sensor unit SU from scratches, etc. An upper surface of the cover window CW may be a surface touched by a user's input means (finger).

[0076] According to some exemplary embodiments, the cover window CW may further include a functional coating layer on the upper surface and / or the lower surface. The functional coating layer may include an anti-fingerprint layer, an anti-reflection layer, a hard coating layer, and the like.

[0077] Figure 3 is a diagram showing a method according to some exemplary embodiments Figure 2 FIG. 1 is a diagram of an example of a display unit.

[0078] Reference Figure 3 , the display unit DU may include pixels P, scan lines SL, data lines DL, power lines PL, scan control lines SCL, a scan driver 110, a display driver circuit 200, a display pad DP, and a hole AH.

[0079] When viewed from the top, the display unit DU has a display area DA and non-display areas NDA1 and NDA2 defined thereon. The first non-display area NDA1 may be defined along a boundary of the display area DA. In addition, the display area DA surrounds the second non-display area NDA2. The display area DA, the first non-display area NDA1, and the second non-display area NDA2 of the display unit DU may correspond to Figure 1 4. The display area DA, the first non-display area NDA1 and the second non-display area NDA2 of the display unit DU shown in FIG.

[0080] The pixel P is arranged in the display area DA. When viewed from the top, the area of ​​the second non-display area NDA2 may be larger than the area actually occupied by the hole AH. The pixel P may not be located in the gap area GA between the hole AH formed in the second non-display area NDA2 and the display area DA. Accordingly, light may not be emitted through the gap area GA of the display unit DU.

[0081] The scan lines SL are arranged in parallel in the second direction (y-axis direction) and extend around the hole AH. The data lines DL are arranged in a first direction (x-axis direction) intersecting the second direction (y-axis direction) and extend around the hole AH. The power lines PL may include at least one line parallel to the data lines DL in the second direction (y-axis direction) and a plurality of lines branching from the at least one line in the first direction (x-axis direction) and extending around the hole AH. In addition, the scan lines SL, the data lines DL, and the power lines PL in the gap area GA may extend around the hole AH. However, it should be understood that the present disclosure is not limited thereto. In some exemplary embodiments, the scan lines SL, the data lines DL, and the power lines PL may extend around the hole AH in the display area DA. In some other exemplary embodiments, the scan lines SL, the data lines DL, and the power lines PL may extend around the hole AH in the entire gap area GA and the display area DA.

[0082] Each of the pixels P may be connected to at least one of the scan lines SL, one of the data lines DL, and a power line PL. Each of the pixels P may include a thin film transistor including a driving transistor and at least one switching transistor, an organic light emitting diode, and a capacitor. When a scan signal is applied from the scan line SL, each of the pixels P receives a data voltage of the data line DL and supplies a driving current to the organic light emitting diode according to the data voltage applied to the gate electrode, thereby emitting light.

[0083] The scan driver 110 is connected to the display driver circuit 200 through at least one scan control line SCL. Accordingly, the scan driver 110 may receive a scan control signal of the display driver circuit 200. The scan driver 110 generates a scan signal according to the scan control signal and supplies the scan signal to the scan line SL.

[0084] Although in Figure 3 The scan driver 110 is formed in the first non-display area NDA1 on the left side of the display area DA, but the present disclosure is not limited thereto. For example, the scan driver 110 may be formed in the first non-display area NDA1 on the left and right sides of the display area DA.

[0085] The display driver circuit 200 is connected to the display pad DP and receives digital video data and a timing signal. The display driver circuit 200 converts the digital video data into an analog positive / negative data voltage and supplies the analog positive / negative data voltage to the data line DL through the link line LL. In addition, the display driver circuit 200 generates a scan control signal for controlling the scan driver 110 and supplies the scan control signal through the scan control line SCL. The pixel P supplied with the data voltage is selected by the scan signal of the scan driver 110, and the data voltage is supplied to the selected pixel P. The display driver circuit 200 can be implemented as an integrated circuit (IC) and can be attached to the substrate SUB by a chip on glass (COG) technology, a chip on plastic (COP) technology, or ultrasonic bonding.

[0086] Figure 4 It is shown that the Figure 3 Circuit diagram of a pixel in a display unit.

[0087] Reference Figure 4 The organic light emitting diode OLED may be a top emission organic light emitting diode or a bottom emission organic light emitting diode. The pixel P includes a pixel driver circuit for driving the organic light emitting diode OLED, and includes a switching transistor TRs, a driving transistor TRd, and a storage capacitor Cst.

[0088] The first power voltage ELVDD is supplied to the driving transistor TRd, and the second power voltage ELVSS is supplied to the organic light emitting diode OLED. The second power voltage ELVSS may have a voltage level lower than that of the first power voltage ELVDD.

[0089] The switching transistor TRs outputs a data signal applied to the data line DL in response to a scan signal applied to the scan line SL. The storage capacitor Cst charges a voltage corresponding to the data signal received from the switching transistor TRs. The driving transistor TRd is connected to the organic light emitting diode OLED. The driving transistor TRd controls a driving current flowing in the organic light emitting diode OLED in response to the amount of charge stored in the storage capacitor Cst.

[0090] The equivalent circuit is only an example, and the pixel P is not limited thereto. For example, the pixel P may further include one or more transistors, and may include more capacitors. The organic light emitting diode OLED may be connected between the power line PL and the driving transistor TRd.

[0091] Figure 5 is a diagram showing a method according to some exemplary embodiments Figure 2 FIG. 1 is a diagram of an example of a sensor unit.

[0092] For the convenience of illustration, Figure 5 Only the sensor SC, the sensor lines TL and RL, and the sensor pads SP are shown. The sensor pads SP may include a first sensor pad SP1 and a second sensor pad SP2.

[0093] Reference Figure 5 , the sensor unit SU includes a sensor area SSA for sensing a user's touch, a sensor peripheral area SPA located around the sensor area SSA, and a hole AH. The sensor area SSA overlaps the display area DA and the gap area GA of the display unit DU, and the sensor peripheral area SPA overlaps the first non-display area NDA1 of the display unit DU. As described above, since the hole AH is formed so that it penetrates the display unit DU and the sensor unit SU, the hole AH formed in the display unit DU and the hole AH formed in the sensor unit SU may overlap each other in the third direction (z-axis direction).

[0094] The sensor SC may be located in the sensor area SSA. The sensor SC may include sensing electrodes RE electrically connected to each other in a first direction (x-axis direction), and driving electrodes TE electrically connected to each other in a second direction (y-axis direction) intersecting the first direction (x-axis direction). Figure 5 Although the sensing electrodes RE and the driving electrodes TE are formed in a rhombus-like shape when viewed from the top of FIG. 8 , the present disclosure is not limited thereto.

[0095] The sensor SC may include a first connection electrode BE1 and a second connection electrode BE2 to prevent or reduce the occurrence of a short circuit at the intersection between the sensing electrode RE and the driving electrode TE. The first connection electrode BE1 is electrically connected between the driving electrodes TE adjacent to each other along the second direction (y-axis direction), and the second connection electrode BE2 is electrically connected between the sensing electrodes RE adjacent to each other along the first direction (x-axis direction). In this case, the driving electrode TE, the sensing electrode RE, and the second connection electrode BE2 included in the sensing electrode RE may be located on a single layer. The first connection electrode BE1 included in the driving electrode TE may be arranged at a different layer from the driving electrode TE, the sensing electrode RE, and the second connection electrode BE2. In addition, the sensing electrodes RE electrically connected to each other in the first direction (x-axis direction) and the driving electrodes TE electrically connected to each other in the second direction (y-axis direction) are electrically insulated from each other.

[0096] The sensor lines TL and RL may be located in the sensor peripheral area SPA. The sensor lines TL and RL may include a sensing line RL connected to the sensing electrode RE and first and second driving lines TL1 and TL2 connected to the driving electrode TE.

[0097] The sensing electrodes RE located on the right side of the sensor area SSA may be connected to the sensing line RL. For example, some of the sensing electrodes RE located at the right end electrically connected in the first direction (x-axis direction) may be connected to the sensing line RL. The sensing line RL may be connected to the first sensor pad SP1.

[0098] The driving electrodes TE located on the lower side of the sensor area SSA may be connected to the first driving line TL1, and the driving electrodes TE located on the upper side of the sensor area SSA may be connected to the second driving line TL2. For example, some of the driving electrodes TE located on the lower side, which are electrically connected to each other in the second direction (y-axis direction), may be connected to the first driving line TL1, and some of the driving electrodes TE located on the upper side may be connected to the second driving line TL2. The second driving line TL2 may be connected to the driving electrode TE on the upper side of the sensor area SSA via the left outer side of the sensor area SSA. The first driving line TL1 and the second driving line TL2 may be connected to the second sensor pad SP2.

[0099] The sensor SC may be a self-capacitive sensor or a mutual capacitance sensor. When the sensor SC is a mutual capacitance sensor, a driving signal is supplied to the driving electrode TE through the first driving line TL1 and the second driving line TL2. By doing so, a mutual capacitance charge is formed at the intersection between the sensing electrode RE and the driving electrode TE. Then, a change in the charge amount of the sensing electrode RE is measured through the sensing line RL, and whether there is a touch input is determined based on the change in the charge amount of the sensing electrode RE.

[0100] When the sensor SC is a self-capacitance sensor, the drive signal is supplied to the drive electrode TE and the sensing electrode RE through the first drive line TL1, the second drive line TL2, and the sensing line RL. By doing so, the self-capacitance of the sensing electrode RE and the drive electrode TE is charged. Then, the change in the charge amount of the self-capacitance of the drive electrode TE and the sensing electrode RE is measured through the first drive line TL1, the second drive line TL2, and the sensing line RL, and it is determined whether there is a touch input based on the change in the charge amount of the self-capacitance.

[0101] It is also possible to divide the sensor unit SU into sub-areas and position the sensor SC in each of the sub-areas, thereby determining whether a crack occurs based on a detection value from the sensor SC. For example, it may be possible to divide the sensor unit SU into one or more sub-areas, and compare a reference value for the set sensing area with the detection value, thereby determining whether a crack occurs.

[0102] like Figure 6 As shown in FIG, the driving electrode TE, the sensing electrode RE, and the connecting electrodes BE1 and BE2 may be formed as mesh electrodes. Figure 2 As shown in , if the sensor unit SU including the driving electrode TE and the sensing electrode RE is directly formed on the thin film encapsulation layer TFEL, the distance between the second electrode of the light emitting element layer EML and the driving electrode TE or the sensing electrode RE of the sensor unit SU is very close. As a result, a very large parasitic capacitance may be formed between the second electrode of the light emitting element layer EML and the driving electrode TE or the sensing electrode RE of the sensor unit SU. For this reason, as Figure 6 As shown in , in order to reduce parasitic capacitance, it is desirable that the driving electrodes TE and the sensing electrodes RE are formed in a mesh pattern rather than being formed as non-patterned electrodes of a transparent oxide conductive layer such as indium tin oxide (ITO) and indium zinc oxide (IZO).

[0103] The first protection line GL1 may be located on the outer side of the outermost one of the sensing lines RL. In addition, the first ground line GRL1 may be located on the outer side of the first protection line GL1. That is, the first protection line GL1 may be located on the right side of the rightmost one of the sensing lines RL, and the first ground line GRL1 may be located on the right side of the first protection line GL1.

[0104] The second protection line GL2 may be positioned between the innermost one of the sensing lines RL and the first driving line TL1 which is the rightmost one of the first driving lines TL1. The second protection line GL2 may be positioned between the rightmost one of the first driving lines TL1 and the second ground line GRL2. In addition, the third protection line GL3 may be positioned between the innermost one of the sensing lines RL and the second ground line GRL2. The second ground line GRL2 may be connected to the first sensor pad located at the leftmost one of the first sensor pads SP1 and the second sensor pad located at the rightmost one of the second sensor pads SP2.

[0105] The fourth protection line GL4 may be located on the outer side of the outermost one of the second driving lines TL2. In addition, the third ground line GRL3 may be located on the outer side of the fourth protection line GL4. For example, the fourth protection line GL4 may be located on the left side of the leftmost one of the second driving lines TL2 and on the upper side of the uppermost one. The third ground line GRL3 may be located on the left side and on the upper side of the fourth protection line GL4.

[0106] The fifth protection line GL5 may be located on the inner side of the innermost one of the second driving lines TL2 For example, the fifth protection line GL5 may be located between the rightmost one of the second driving lines TL2 and the sensor SC.

[0107] according to Figure 5 In some exemplary embodiments of the present disclosure shown in , the first ground line GRL1, the second ground line GRL2, and the third ground line GRL3 are respectively located on the rightmost side, the lowermost side, and the uppermost side of the display panel 100. In addition, a ground voltage is applied to the first ground line GRL1, the second ground line GRL2, and the third ground line GRL3. Accordingly, when static electricity is applied from the outside, the static electricity can be discharged to the first ground line GRL1, the second ground line GRL2, and the third ground line GRL3.

[0108] In addition, according to Figure 5In some exemplary embodiments of the present disclosure shown in , the first protection line GL1 is located between the outermost one of the sensing lines RL and the first ground line GRL1, so that it can reduce the influence of the change in the voltage of the first ground line GRL1 on the outermost one of the sensing lines RL. The second protection line GL2 is located between the innermost one of the sensing lines RL and the outermost one of the first driving line TL1. Therefore, the second protection line GL2 can reduce the influence of the change in voltage on the innermost one of the sensing lines RL and the outermost one of the first driving line TL1. The third protection line GL3 is located between the innermost one of the sensing lines RL and the second ground line GRL2, so that it can reduce the influence of the change in the voltage of the second ground line GRL2 on the innermost one of the sensing lines RL. The fourth protection line GL4 is located between the outermost one of the second driving lines TL2 and the third ground line GRL3, so that it can reduce the influence of the change in the voltage of the third ground line GRL3 on the second driving line TL2. The fifth protection line GL5 is located between the innermost one of the second driving lines TL2 and the sensor SC, so that it can reduce the mutual influence between the innermost one of the second driving lines TL2 and the sensor SC.

[0109] When the sensor SC is a mutual capacitance sensor, a ground voltage may be applied to the first, second, third, fourth, and fifth protection lines GL1, GL2, GL3, GL4, and GL5. When the sensor SC is a self-capacitance sensor, a driving signal that is the same as a driving signal applied to the first, second, and sensing lines TL1, TL2, and RL may be applied to the first, second, third, fourth, and fifth protection lines GL1, GL2, GL3, GL4, and GL5.

[0110] As described above, the hole AH is formed in the sensor unit SU, and the sensor SC is not located in the hole AH. The sensors SC separated by the hole AH are connected to each other through the first connection electrode BE1 or the second connection electrode BE2 in the hole AH. For example, the driving electrodes TE separated from each other by the hole AH may be connected to each other through the first connection electrode BE1 extending around the hole AH. The sensing electrodes RE separated from each other by the hole AH may be connected to each other through the second connection electrode BE2 extending around the hole AH.

[0111] The circuit board 300 may be electrically connected to the first sensor pad SP1 and the second sensor pad SP2. In some exemplary embodiments, the circuit board 300 may be attached to the first sensor pad SP1 and the second sensor pad SP2 using an anisotropic conductive film. In this way, the leads of the circuit board 300 may be electrically connected to the pads. The circuit board 300 may be a flexible printed circuit board such as a chip on film, a printed circuit board, or a flexible film.

[0112] The circuit board 300 may include a touch driver circuit 400 , a touch coordinate calculator 500 , and a crack detector 600 .

[0113] The touch driver circuit 400 may be connected to the sensor SC of the sensor unit SU of the display panel 100. The touch driver circuit 400 applies a driving signal to the sensor SC of the sensor unit SU and measures the capacitance of the touch electrode. The driving signal may have a driving pulse. The touch driver circuit 400 samples the change in the charge amount of the sensor SC and converts it into touch raw data (TRD) as digital data.

[0114] The touch coordinate calculator 500 receives the touch raw data (TRD) from the touch driver circuit 400 and calculates the touch coordinates according to a predetermined touch coordinate calculation method. The touch coordinate calculator 500 may be implemented as a microcontroller unit (MCU). However, it should be understood that this is merely illustrative. The touch driver circuit 400 and the touch coordinate calculator 500 may be defined as a touch driver.

[0115] The crack detector 600 may include a first memory for storing reference values ​​of different regions, a second memory for calculating and storing detection values ​​of different regions, a comparison unit for comparing the detection value with the reference value to generate a comparison value, and a determination unit for determining whether a crack occurs by determining whether the comparison value is within an error range. The crack detector 600 will be described in more detail later.

[0116] Figure 6 yes Figure 5 An enlarged view of a portion A of the display device shown in FIG. Figure 7 is along Figure 6 A cross-sectional view taken along line II-II'. Figure 8 is along Figure 6 A cross-sectional view taken along line III-III'.

[0117] Reference Figure 6 , the sensor unit SU may include a sensor SC. The sensor SC may include a driving electrode TE, a sensing electrode RE, a first connection electrode BE1, and a second connection electrode BE2.

[0118] In some exemplary embodiments, each of the driving electrodes TE and the sensing electrodes RE included in the sensor unit SU may be in the form of a grid surrounding the pixels P. Each of the pixels P may be defined as a light emitting element layer EML (see FIG. 1 ) of the display unit DU. Figure 2) is emitted to an area outside the display unit DU. In some exemplary embodiments, each of the pixels P may represent different first to third colors, respectively. The first color may be red, the second color may be green, and the third color may be blue. However, it should be understood that the present disclosure is not limited thereto. In some exemplary embodiments, the pixels P may represent the same first color, or may represent the first to fourth colors, respectively.

[0119] exist Figure 6 In the example shown in , when viewed from the top, although the pixel P is formed in a rhombus shape, the present disclosure is not limited thereto. That is, when viewed from the top, the pixel P may be formed in a rectangular shape or a square shape, or may be formed in any other polygonal shape, a circular shape, or an elliptical shape other than a quadrilateral shape. In addition, the shapes of the pixels P may be different from each other.

[0120] exist Figure 6 In the example shown in , when viewed from the top, although the pixels P have the same size, the present disclosure is not limited thereto. In some exemplary embodiments, when viewed from the top, the pixels P may have different sizes. For example, when viewed from the top, the size of the pixel P that generates red light may be larger than the size of the pixel P that generates green light, and the size of the pixel P that generates blue light may be larger than the size of the pixel P that generates green light. In addition, in some exemplary embodiments, when viewed from the top, the size of the pixel P that generates red light may be substantially equal to or smaller than the size of the pixel P that generates blue light.

[0121] When viewed from the top, the first connection electrode BE1 may be bent at least once in the form of “<” or ”>”. However, it should be understood that the form of the first connection electrode BE1 is not limited thereto. The first connection electrode BE1 may electrically connect the driving electrodes TE to each other in the second direction (y-axis direction).

[0122] Each of the second connection electrodes BE2 may be located between adjacent ones of the sensing electrodes RE, and may electrically connect the sensing electrodes RE to each other in the first direction (x-axis direction).

[0123] The first connection electrode BE1 and the second connection electrode BE2 may be arranged on different layers. For example, the drive electrode TE, the sensing electrode RE, and the second connection electrode BE2 included in the sensing electrode RE may be arranged on a single layer. The first connection electrode BE1 included in the drive electrode TE may be arranged on a layer different from the drive electrode TE, the sensing electrode RE, and the second connection electrode BE2. In addition, the sensing electrodes RE electrically connected to each other in the first direction (x-axis direction) and the drive electrodes TE electrically connected to each other in the second direction (y-axis direction) are electrically insulated from each other. The first connection electrode BE1 may be connected to the drive electrode TE through the contact hole CNT at a position where they overlap with the drive electrode TE.

[0124] Reference Figure 7 and Figure 8 The thin film transistor layer TFTL is formed on the substrate SUB. The thin film transistor layer TFTL includes a first buffer film BF1, a thin film transistor 120, a gate insulating layer 130, an interlayer dielectric layer 140, a protective layer 150 and a planarization layer 160.

[0125] The first buffer film BF1 may be formed on one surface of the substrate SUB. The first buffer film BF1 may be formed on one surface of the substrate SUB to protect the thin film transistor 120 and the organic emission layer 172 of the light emitting element layer EML from moisture that may penetrate the substrate SUB. The first buffer film BF1 may be made of a plurality of inorganic layers sequentially stacked on each other. For example, the first buffer film BF1 may be made of a multilayer in which one or more inorganic layers of a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer are alternately stacked on each other. The first buffer film BF1 may be removed.

[0126] The thin film transistors 120 are formed on the first buffer film BF1. Each of the thin film transistors 120 includes an active layer 121, a gate electrode 122, a source electrode 123, and a drain electrode 124. Figure 7 In the embodiment, the thin film transistor 120 is implemented as a top-gate transistor in which the gate electrode 122 is located above the active layer 121. However, it should be understood that the present disclosure is not limited thereto. That is, the thin film transistor 120 may be implemented as a bottom-gate transistor in which the gate electrode 122 is located below the active layer 121, or as a dual-gate transistor in which the gate electrode 122 is located above and below the active layer 121.

[0127] The active layer 121 is formed on the first buffer film BF1. The active layer 121 may include polycrystalline silicon, single crystal silicon, low temperature polycrystalline silicon, amorphous silicon, or an oxide semiconductor. The oxide semiconductor may include, for example, a binary compound (AB) containing indium, zinc, gallium, tin, titanium, aluminum, hafnium (Hf), zirconium (Zr), magnesium (Mg), etc. x ), ternary compounds (AB x C y) and quaternary compounds (AB x C y D z For example, the active layer 121 may include an oxide including indium, tin, and zinc (ITZO) or an oxide including indium, gallium, and zinc (IGZO). A light blocking layer for blocking external light incident on the active layer 121 may be formed between the first buffer film BF1 and the active layer 121 .

[0128] The gate insulating layer 130 may be formed on the active layer 121. The gate insulating layer 130 may be formed of an inorganic layer (eg, a silicon nitride layer, a silicon nitride oxide layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer).

[0129] The gate electrode 122 and the gate line may be formed on the gate insulating layer 130. The gate electrode 122 and the gate line may be made of a single layer or multiple layers of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0130] An interlayer dielectric layer 140 may be formed over the gate electrode 122 and the gate line. The interlayer dielectric layer 140 may be formed of an inorganic layer (eg, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer).

[0131] The source electrode 123 and the drain electrode 124 may be formed on the interlayer dielectric layer 140. Each of the source electrode 123 and the drain electrode 124 may be connected to the active layer 121 through a contact hole penetrating the gate insulating layer 130 and the interlayer dielectric layer 140. The source electrode 123 and the drain electrode 124 may be made of a single layer or a multilayer of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0132] To insulate the thin film transistor 120, a protective layer 150 may be formed on the source electrode 123 and the drain electrode 124. The protective layer 150 may be formed of an inorganic layer (eg, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer).

[0133] The planarization layer 160 may be formed on the protection layer 150 to provide a flat surface over the step difference of the thin film transistor 120. The planarization layer 160 may be formed of an organic layer such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

[0134] The light emitting element layer EML is formed on the thin film transistor layer TFTL and includes a light emitting element 170 and a pixel defining layer 180 .

[0135] The light emitting elements 170 and the pixel defining layer 180 are formed on the planarization layer 160. Each of the light emitting elements 170 may include a first electrode 171, an organic emission layer 172, and a second electrode 173.

[0136] The first electrode 171 may be formed on the planarization layer 160. The first electrode 171 is connected to the drain electrode 124 of the thin film transistor 120 through a contact hole penetrating the protection layer 150 and the planarization layer 160.

[0137] In a top-emitting organic light-emitting diode in which light is emitted from the organic emission layer 172 toward the second electrode 173, the first electrode 171 may be made of a metal material having high reflectivity, such as a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, and a stacked structure of an APC alloy and ITO (ITO / APC / ITO). The APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu).

[0138] In a bottom emission organic light emitting diode in which light is emitted from an organic emission layer 172 toward a first electrode 171, the first electrode 171 may be formed of a transparent conductive material (TCP) such as ITO and IZO that can transmit light or a semi-transmissive conductive material such as magnesium (Mg), silver (Ag), and an alloy of magnesium (Mg) and silver (Ag). In this case, when the first electrode 171 is made of a semi-transmissive metal material, light extraction efficiency may be increased by using a microcavity.

[0139] The pixel defining layer 180 may be formed to separate the first electrodes 171 from each other on the planarization layer 160 to define each of the pixels P. The pixel defining layer 180 may be formed to cover the edge of the first electrode 171. The pixel defining layer 180 may be formed of an organic layer such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

[0140] In each of the pixels P, a first electrode 171 , an organic emission layer 172 , and a second electrode 173 are sequentially stacked so that holes from the first electrode 171 and electrons from the second electrode 173 are combined with each other in the organic emission layer 172 to emit light. Each of the pixels P may include a light emitting element 170 .

[0141] The organic emission layer 172 is formed on the first electrode 171 and the pixel defining layer 180. The organic emission layer 172 may include an organic material and emit light of a certain color. For example, the organic emission layer 172 may include a hole transport layer, an organic material layer, and an electron transport layer.

[0142] The second electrode 173 is formed on the organic emission layer 172. The second electrode 173 may be formed to cover the organic emission layer 172. The second electrode 173 may be a common layer formed across the pixels P. A capping layer may be formed on the second electrode 173.

[0143] In a top-emitting organic light-emitting diode, the second electrode 173 may be formed of a transparent conductive material (TCP) such as ITO and IZO that can transmit light or a semi-transmissive conductive material such as magnesium (Mg), silver (Ag), and an alloy of magnesium (Mg) and silver (Ag). When the second electrode 173 is formed of a semi-transmissive reflective metal material, light extraction efficiency can be increased by using a microcavity.

[0144] In a bottom emission organic light emitting diode, the second electrode 173 may be made of a metal material having high reflectivity, such as a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, and a stacked structure of an APC alloy and ITO (ITO / APC / ITO). The APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu).

[0145] The thin film encapsulation layer TFEL is formed on the light emitting element layer EML and includes an encapsulation layer 190 .

[0146] The encapsulation layer 190 is arranged on the second electrode 173. The encapsulation layer 190 may include at least one inorganic layer to prevent or reduce the penetration of oxygen or moisture into the organic emission layer 172 and the second electrode 173. In addition, the encapsulation layer 190 may include at least one organic layer to protect the light-emitting element layer EML from foreign matter such as dust. For example, the encapsulation layer 190 may include a first inorganic layer located on the second electrode 173, an organic layer located on the first inorganic layer, and a second inorganic layer located on the organic layer. The first inorganic layer and the second inorganic layer may be formed of a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer, but is not limited thereto. The organic layer may be formed of an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin, but is not limited thereto.

[0147] The sensor unit SU is located on the thin film encapsulation layer TFEL. The sensor unit SU includes a second buffer film BF2, a sensor insulating layer TINS ​​located on the second buffer film BF2, and a sensor SC located between the second buffer film BF2 and the sensor insulating layer TINS.

[0148] The first connection electrode BE1 and the second buffer film BF2 may be located on the thin film encapsulation layer TFEL. For example, the first connection electrode BE1 may be located on the thin film encapsulation layer TFEL, and the second buffer film BF2 may be located to cover the thin film encapsulation layer TFEL and the first connection electrode BE1. The second buffer film BF2 may have a contact hole CNT formed therein, and a portion of the first connection electrode BE1 is exposed through the contact hole CNT.

[0149] The second buffer film BF2 may be made of a plurality of inorganic layers sequentially stacked on each other. For example, the second buffer film BF2 may be made of a plurality of layers in which one or more inorganic layers of a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer are alternately stacked on each other. The second buffer film BF2 may be removed.

[0150] The driving electrode TE and the sensing electrode RE may be located on the second buffer film BF2. Figure 5 The second connection electrode BE2, the first driving line TL1, the second driving line TL2, the sensing line RL, the protection lines GL1, GL2, GL3, GL4 and GL5, and the ground lines GRL1, GRL2 and GRL3 shown in FIG. may be located on the second buffer film BF2. That is, except for the first connection electrode BE1, the driving electrode TE, the sensing electrode RE, the second connection electrode BE2, the first driving line TL1, the second driving line TL2, the sensing line RL, the protection lines GL1, GL2, GL3, GL4 and GL5, and the ground lines GRL1, GRL2 and GRL3 may be located on the same layer and may be made of the same material. The driving electrode TE, the sensing electrode RE, the second connecting electrode BE2, the first driving line TL1, the second driving line TL2, the sensing line RL, the protection lines GL1, GL2, GL3, GL4 and GL5, and the ground lines GRL1, GRL2 and GRL3 may be made of a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, and a stacked structure of an APC alloy and ITO (ITO / APC / ITO), but are not limited thereto.

[0151] The driving electrode TE may be electrically connected to the first connection electrode BE1 through a contact hole CNT formed in the second buffer film BF2 , and may be electrically connected to the next driving electrode TE in the second direction (y-axis direction) through the first connection electrode BE1 .

[0152] According to some example embodiments, the second connection electrode BE2 may be located on the second buffer film BF2 so that the sensing electrode RE may be electrically connected to the next sensing electrode RE in the first direction (x-axis direction) through the second connection electrode BE2 .

[0153] Each of the first and second connection electrodes BE1 and BE2 may be made of a stack structure of aluminum and titanium (Ti / Al / Ti), a stack structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, and a stack structure of APC alloy and ITO (ITO / APC / ITO), but is not limited thereto.

[0154] The sensor insulating layer TINS ​​is formed on the driving electrode TE, the sensing electrode RE and the second connection electrode BE2. The sensor insulating layer TINS ​​may be formed of an inorganic layer such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer or an aluminum oxide layer.

[0155] exist Figure 8 In the example shown in , although the first connection electrode BE1 is located on the encapsulation layer 190, and the driving electrode TE and the sensing electrode RE are located on the second buffer film BF2, the present disclosure is not limited thereto. In some exemplary embodiments, the driving electrode TE and the sensing electrode RE may be located on the encapsulation layer 190, and the first connection electrode BE1 may be formed on the second buffer film BF2.

[0156] The cover window CW is located on the sensor unit SU. For example, the cover window CW may be located on the sensor insulation layer TINS. Figure 3 The cover window CW is described in more detail, and thus some redundant descriptions will be omitted.

[0157] Fig. 9 is a diagram schematically illustrating a region in which a hole is formed and a crack detector according to some exemplary embodiments of the present disclosure. Fig.10 is a block diagram of a crack detector of a sensor unit according to some exemplary embodiments of the present disclosure.

[0158] Reference Fig. 9 The sensor unit SU may include a hole AH and a sensor SC located around the hole AH (see Figure 5 ).

[0159] The sensor unit SU may include a sensing area. For example, the sensor unit SU may include a first sensing area SA1, a third sensing area SA3, and a second sensing area SA2, wherein the first sensing area SA1 is in the form of a closed curve positioned in the second non-display area NDA2 and surrounds the hole AH, the third sensing area SA3 is in the display area DA and surrounds the hole AH, and the second sensing area SA2 is positioned between the first sensing area SA1 and the third sensing area SA3 in the form of a closed curve surrounding the hole AH. Fig. 9As shown in , the first sensing area SA1, the second sensing area SA2 and the third sensing area SA3 may be adjacent to each other and connected to each other. However, it should be understood that the present disclosure is not limited thereto. In some implementations, the first sensing area SA1, the second sensing area SA2 and the third sensing area SA3 may be spaced apart from each other by a predetermined distance.

[0160] The sensors SC located in each of the first sensing area SA1, the second sensing area SA2, and the third sensing area SA3 may be defined as a single group. For example, the sensors SC located in the first sensing area SA1 may be defined as the first sensor group EG1, the sensors SC located in the second sensing area SA2 may be defined as the second sensor group EG2, and the sensors SC located in the third sensing area SA3 may be defined as the third sensor group EG3. Fig. 9 In the example shown in , although multiple sensors SC are positioned in each of the sensor groups, this is merely illustrative. Depending on the location and size of the sensing area, a single sensor group may include a single sensor SC.

[0161] The crack detector 600 can obtain detection values ​​DS1, DS2, and DS3 from the first sensing area SA1, the second sensing area SA2, and the third sensing area SA3, respectively. Fig. 9 A single crack detector 600 is shown in the figure, but more than one crack detector 600 may be positioned so that the number of crack detectors 600 is equal to the number of sensing areas. As used herein, a detection value refers to a value for electrical connection that may be formed between the drive electrode TE, the sensing electrode RE, the first connection electrode BE1, and the second connection electrode BE2 that form the sensor SC. The present disclosure is not limited by the type and characteristics of the detection value. For example, the detection value may be a capacitance obtained at the intersection between the first connection electrode BE1 and the second connection electrode BE2. In some exemplary embodiments, the detection value may be a resistance obtained at the intersection between the first connection electrode BE1 and the second connection electrode BE2. In the following description, as an example, the detection value from the sensing area is a capacitance obtained at the intersection between the first connection electrode BE1 and the second connection electrode BE2.

[0162] The crack detector 600 may detect a first detection value DS1 from the first sensor group EG1 in the first sensing area SA1. The crack detector 600 may detect a second detection value DS2 from the second sensor group EG2 in the second sensing area SA2. The crack detector 600 may detect a third detection value DS3 from the third sensor group EG3 in the third sensing area SA3.

[0163] For example, refer to Fig.10 , the crack detector 600 may include a first memory 610 , a second memory 620 , a comparing unit 630 , and a determining unit 640 .

[0164] The first memory 610 may store a database of reference values ​​RS1, RS2, and RS3 regarding the sensing areas SA1, SA2, and SA3. For example, in the first memory 610, a database of a first reference value RS1 regarding the first sensing area SA1, a second reference value RS2 regarding the second sensing area SA2, and a third reference value RS3 regarding the third sensing area SA3 may be stored. The reference values ​​RS1, RS2, and RS3 may be defined as capacitances obtained at intersections between the first connection electrode BE1 and the second connection electrode BE2 when there is no crack. For example, the first reference value RS1 may be a capacitance of the first sensor group EG1 in the first sensing area SA1 when there is no crack. The second reference value RS2 may be a capacitance of the second sensor group EG2 in the second sensing area SA2 when there is no crack. The third reference value RS3 may be a capacitance of the third sensor group EG3 in the third sensing area SA3 when there is no crack. The first memory 610 may transmit the reference values ​​RS1, RS2, and RS3 of the sensing areas SA1, SA2, and SA3 to the comparison unit 630. The reference values ​​RS1, RS2, and RS3 of the sensing areas SA1, SA2, and SA3 may be different from each other. However, it should be understood that the present disclosure is not limited thereto. The reference values ​​RS1, RS2, and RS3 of the sensing areas SA1, SA2, and SA3 may be equal to each other.

[0165] In the second memory 620, the detection values ​​DS1, DS2, and DS3 sensed in the sensing areas SA1, SA2, and SA3 may be stored, respectively. For example, in the second memory 620, a database of the first detection value DS1 of the first sensing area SA1, the second detection value DS2 of the second sensing area SA2, and the third detection value DS3 of the third sensing area SA3 may be stored. The second memory 620 may transmit the detection values ​​DS1, DS2, and DS3 detected in the sensing areas SA1, SA2, and SA3, respectively, to the comparison unit 630.

[0166] The first memory 610 and the second memory 620 may include volatile memory devices such as dynamic random access memory (DRAM) and static random access memory (SRAM), and non-volatile memory devices such as erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM) and flash memory devices, but are not limited thereto.

[0167] The comparison unit 630 may receive reference values ​​RS1, RS2, and RS3 from the first memory 610, and detection values ​​DS1, DS2, and DS3 from the second memory 620. For example, the comparison unit 630 may receive the first reference value RS1, the second reference value RS2, and the third reference value RS3 from the first memory 610 and the first detection value DS1, the second detection value DS2, and the third detection value DS3 from the second memory 620.

[0168] The comparison unit 630 may calculate the comparison values ​​CS1, CS2, and CS3 using the received reference values ​​RS1, RS2, and RS3 and the detection values ​​DS1, DS2, and DS3. For example, the comparison unit 630 may calculate the first comparison value CS1 by comparing the first reference value RS1 with the first detection value DS1. The comparison unit 630 may calculate the second comparison value CS2 by comparing the second reference value RS2 with the second detection value DS2. The comparison unit 630 may calculate the third comparison value CS3 by comparing the third reference value RS3 with the third detection value DS3. The comparison values ​​CS1, CS2, and CS3 may be expressed as absolute values. The comparison unit 630 may transmit the calculated comparison values ​​CS1, CS2, and CS3 to the determination unit 640.

[0169] The determination unit 640 receives the comparison values ​​CS1, CS2, and CS3 from the comparison unit 630. For example, the determination unit 640 receives the first comparison value CS1, the second comparison value CS2, and the third comparison value CS3 from the comparison unit 630. The determination unit 640 may store a predetermined error range.

[0170] Different sensing areas SA1, SA2, and SA3 may have different error ranges. For example, a first error range of the first sensing area SA1, a second error range of the second sensing area SA2, and a third error range of the third sensing area SA3 may be stored. The first error range to the third error range may be different from each other. However, it should be understood that this is merely illustrative. The first error range to the third error range may be the same.

[0171] By comparing an error range (e.g., a predetermined error range) with the comparison values ​​CS1, CS2, and CS3, it is possible to determine whether there is a defect caused by a crack, and transmit the result to the output unit 700. For example, if any one of the first comparison value CS1, the second comparison value CS2, and the third comparison value CS3 exceeds the error range, a first crack signal is transmitted to the output unit 700. If the value falls within the error range, a second crack signal is transmitted to the output unit 700. In addition, the determination unit 640 may further include a memory for storing the error range and an operation unit for determining whether the comparison value is within the error range.

[0172] If the first comparison value CS1 exceeds the predetermined error range, the determination unit 640 determines that the first sensing area SA1 has a defect caused by a crack. If the second comparison value CS2 falls within the predetermined error range, the determination unit 640 determines that the second sensing area SA2 has no defect caused by a crack. If the third comparison value CS3 falls within the predetermined error range, the determination unit 640 determines that the third sensing area SA3 has no defect caused by a crack. In this case, it can be determined that a crack occurs in the first sensing area SA1.

[0173] If the first comparison value CS1 exceeds the predetermined error range, the determination unit 640 determines that the first sensing area SA1 has a defect caused by a crack. If the second comparison value CS2 exceeds the predetermined error range, the determination unit 640 determines that the second sensing area SA2 has a defect caused by a crack. If the third comparison value CS3 falls within the predetermined error range, the determination unit 640 determines that the third sensing area SA3 has no defect caused by a crack. In this case, it can be determined that a crack occurs from the first sensing area SA1 to the second sensing area SA2.

[0174] If the first comparison value CS1 exceeds the predetermined error range, the determination unit 640 determines that the first sensing area SA1 has a defect caused by a crack. If the second comparison value CS2 exceeds the predetermined error range, the determination unit 640 determines that the second sensing area SA2 has a defect caused by a crack. If the third comparison value CS3 exceeds the predetermined error range, the determination unit 640 determines that the third sensing area SA3 has a defect caused by a crack. In this case, it can be determined that cracks occur from the first sensing area SA1 to the second sensing area SA2 and from the second sensing area SA2 to the third sensing area SA3.

[0175] As described above, the first sensing area SA1, the second sensing area SA2, and the third sensing area SA3 are formed in the area where cracks may occur around the hole AH, and the detection values ​​DS1, DS2, and DS3 respectively obtained from the first sensing area SA1, the second sensing area SA2, and the third sensing area SA3 are compared with the reference values ​​RS1, RS2, and RS3 to calculate the comparison values ​​CS1, CS2, and CS3. By doing so, it is possible to determine whether a crack occurs in each of the sensing areas SA1, SA2, and SA3 based on a predetermined error range.

[0176] exist Fig. 9 and Fig.10In the example shown in , the first detection value DS1, the second detection value DS2 and the third detection value DS3 are compared with the first reference value RS1, the second reference value RS2 and the third reference value RS3, respectively, to generate the first comparison value CS1, the second comparison value CS2 and the third comparison value CS3. However, it should be understood that the present disclosure is not limited thereto. The comparison value may be generated by adding at least two of the first detection value DS1, the second detection value DS2 and the third detection value DS3 and setting a reference value corresponding thereto.

[0177] Fig.11 is a diagram schematically illustrating a region in which a hole is formed and a crack detector according to some exemplary embodiments of the present disclosure. Fig.12 is a diagram schematically illustrating a region in which a hole is formed and a crack detector in a sensor unit according to some exemplary embodiments of the present disclosure. Fig.13 is a diagram schematically illustrating a region in which a hole is formed and a crack detector in a sensor unit according to some exemplary embodiments of the present disclosure. Fig.14 is a diagram schematically illustrating a region in which a hole is formed and a crack detector in a sensor unit according to some exemplary embodiments of the present disclosure. Figures 11 to 14 is a view for illustrating the modification of the position and number of sensing areas. The description will focus on Fig. 9 The differences between the exemplary embodiments shown in FIG. 1 and FIG. 2 are omitted, and some redundant descriptions will be omitted.

[0178] Reference Fig.11 , the sensor unit SU may include a hole AH and a sensor SC located around the hole AH. The sensor unit SU may include a single sensing area SA. For example, the sensor unit SU may be located in the second non-display area NDA2 and may be formed as a single sensing area SA having a closed curve shape surrounding the hole AH.

[0179] The sensors SC located in the sensing area SA may be defined as a sensor group EG. The crack detector 600 may obtain a detection value DS from the sensing area SA to determine whether a crack has occurred in the second non-display area NDA2 around the hole AH.

[0180] Reference Fig.12 , the sensor unit SU may include a hole AH and a sensor SC located around the hole AH. The sensor unit SU may include a single sensing area SA_1. For example, the sensor unit SU may be located in a portion of the second non-display area NDA2 and in a portion of the display area DA, and may be formed as a single sensing area SA_1 having a closed curve shape surrounding the hole AH.

[0181] The sensors SC located in the sensing area SA_1 may be defined as a sensor group EG_1. The crack detector 600 may obtain a detection value DS_1 from the sensing area SA_1 to determine whether a crack has occurred in a portion of the second non-display area NDA2 and a portion of the display area DA adjacent to the second non-display area NDA2.

[0182] Reference Fig.13 , the sensor unit SU may include a hole AH and a sensor SC located around the hole AH. The sensor unit SU may include a single sensing area SA_2. For example, the sensor unit SU may be located in the display area DA adjacent to the hole AH and may be formed as a single sensing area SA_2 having a closed curve shape.

[0183] The sensors SC located in the sensing area SA_2 may be defined as a sensor group EG_2. The crack detector 600 may obtain a detection value DS_2 from the sensing area SA_2 to determine whether a crack has occurred in the display area DA adjacent to the hole AH.

[0184] Reference Fig.14 , the sensor unit SU may include a hole AH and a sensor SC located around the hole AH. The sensor unit SU may include a first sensing area SA1_1 and a second sensing area SA2_1 in a strip shape. The first sensing area SA1_1 may be located on one side of the hole AH and may be located in a portion of the second non-display area NDA2 and in a display area DA adjacent thereto. The second sensing area SA2_1 may be located on the other side of the hole AH and may be located in a portion of the second non-display area NDA2 and in a display area DA adjacent thereto.

[0185] The sensors SC located in the first sensing area SA1_1 may be defined as a first sensor group EG1_1, and the sensors SC located in the second sensing area SA2_1 may be defined as a second sensor group EG2_1. The crack detector 600 may determine whether a crack has occurred in the first sensing area SA1_1 by detecting a first detection value DS1_1 from the first sensing area SA1_1. The crack detector 600 may determine whether a crack has occurred in the second sensing area SA2_1 by detecting a second detection value DS2_1 from the second sensing area SA2_1. The positions and shapes of the sensing areas may be modified in various ways as needed.

[0186] Fig.15 is a block diagram of a crack detector of a sensor unit according to some exemplary embodiments of the present disclosure. Fig.16 is a block diagram for illustrating a method of detecting a crack by a sensor unit according to some exemplary embodiments of the present disclosure.

[0187] Reference Fig.15 and Fig.16 , the crack detector 600 of the sensor unit SU can detect whether a crack occurs and whether the crack has expanded by performing detection at several time points.

[0188] The crack detector 600 can detect whether a crack has occurred by performing detection on the sensing area SA at several time points t1, t2, and t3. For example, a first detection DT1 can be performed on the sensing area SA at a first time point t1, a second detection DT2 can be performed on the sensing area SA at a second time point t2, and a third detection DT3 can be performed on the sensing area SA at a third time point t3.

[0189] The crack detector 600 may include a first memory 610 , a second memory 620 , a comparing unit 630 , and a determining unit 640 . Fig.15 The crack detector 600 is configured with Fig.10 The configuration of the crack detector 600 is the same, and therefore, some redundant descriptions will be omitted. Hereinafter, changes in the storage values ​​and detection values ​​of the crack detector 600 at time points t1, t2, and t3 will be described in more detail.

[0190] At the first time point t1, in the first memory 610, a database about the first reference value RS(t1) of the sensing area SA at the first time point t1 may be stored. For example, the first reference value RS(t1) may be the capacitance of the sensing area SA when no crack occurs. However, it should be understood that the present disclosure is not limited thereto. The first reference value RS(t1) at the first time point t1 may be set to other values ​​as needed. The first memory 610 may transmit the first reference value RS(t1) of the sensing area SA at the first time point t1 to the comparison unit 630.

[0191] At the first time point t1, the detection value DS(t1) at the first time point t1 detected from the sensing area SA through the first detection DT1 may be stored in the second memory 620. In addition, the second memory 620 may transmit the detection value DS(t1) at the first time point t1 to the first memory 610 and the comparison unit 630. The first memory 610 may store the detection value DS(t1) at the first time point t1 received from the second memory 620 as the reference value RS(t2) at the second time point t2.

[0192] The comparison unit 630 may receive the first reference value RS(t1) at the first time point t1 and the detection value DS(t1) at the first time point t1 from the first memory 610 and the second memory 620, respectively, and may calculate the comparison value CS(t1) at the first time point t1 using the received first reference value RS(t1) at the first time point t1 and the detection value DS(t1) at the first time point t1. The comparison unit 630 may transmit the calculated comparison value CS(t1) at the first time point t1 to the determination unit 640.

[0193] The determination unit 640 may receive the comparison value CS(t1) at the first time point t1 from the comparison unit 630, may compare the predetermined error range with the comparison value CS(t1) at the first time point t1 to determine whether there is a defect caused by a crack, and may transmit the result to the output unit 700. If the comparison value CS(t1) at the first time point t1 exceeds the predetermined error range, the determination unit 640 determines that the sensing area SA has a defect caused by a crack. If the comparison value CS(t1) falls within the predetermined error range, the determination unit 640 determines that the sensing area SA does not have a defect caused by a crack.

[0194] At the second time point t2, the first memory 610 sets the detection value DS(t1) stored therein and detected by the first detection DT1 at the first time point t1 as the reference value RS(t2) at the second time point t2, and can transmit it to the comparison unit 630 together with the first reference value RS(t1) at the first time point t1.

[0195] At the second time point t2, the detection value DS(t2) at the second time point t2 detected from the sensing area SA through the second detection DT2 may be stored in the second memory 620. In addition, the second memory 620 may transmit the detection value DS(t2) at the second time point t2 to the first memory 610 and the comparison unit 630. The first memory 610 may store the detection value DS(t2) at the second time point t2 received from the second memory 620 as the reference value RS(t3) at the third time point t3.

[0196] The comparison unit 630 may receive the first reference value RS(t1) at the first time point t1, the reference value RS(t2) at the second time point t2, and the detection value DS(t2) at the second time point t2 from the first memory 610 and the second memory 620, and may calculate the comparison value CS(t2) at the second time point t2 using the received reference value RS(t2) at the second time point t2 and the detection value DS(t2) at the second time point t2. When the comparison value CS(t2) at the second time point t2 is zero, the comparison unit 630 sets the comparison value CS(t2) at the second time point t2 to zero and transmits it to the determination unit 640. When the comparison value CS(t2) at the second time point t2 is not zero, the comparison unit 630 compares the first reference value RS(t1) at the first time point t1 with the detection value DS(t2) at the second time point t2 to calculate a value and transmits the value as the comparison value CS(t2) at the second time point t2 to the determination unit 640.

[0197] The determination unit 640 may receive the comparison value CS(t2) at the second time point t2 from the comparison unit 630, and may determine that no crack exists or an existing crack does not expand if the comparison value CS(t2) at the second time point t2 is zero.

[0198] When the comparison value CS(t2) at the second time point t2 is not zero, it is determined that a crack has occurred or that an existing crack has expanded. Then, the comparison value CS(t2) at the second time point t2 (a value obtained by comparing the first reference value RS(t1) at the first time point t1 with the detection value DS(t2) at the second time point t2) can be compared with a predetermined error range to determine whether there is a defect caused by the crack. Subsequently, the result can be transmitted to the output unit 700. If the comparison value CS(t2) at the second time point t2 exceeds the predetermined error range, the determination unit 640 determines that the sensing area SA has a defect caused by the crack. If the comparison value CS(t2) falls within the predetermined error range, the determination unit 640 determines that the sensing area SA has no defect caused by the crack.

[0199] At the third time point t3, the first memory 610 sets the detection value DS(t2) stored therein and detected by the second detection DT2 at the second time point t2 as the reference value RS(t3) at the third time point t3, and can transmit it to the comparison unit 630 together with the first reference value RS(t1) at the first time point t1.

[0200] At the third time point t3, the detection value DS(t3) detected from the sensing area SA by the third detection DT3 may be stored in the second memory 620. In addition, the second memory 620 may transmit the detection value DS(t3) at the third time point t3 to the comparison unit 630.

[0201] The comparison unit 630 may receive the first reference value RS(t1) at the first time point t1, the reference value RS(t3) at the third time point t3, and the detection value DS(t3) at the third time point t3 from the first memory 610 and the second memory 620, and may calculate the comparison value CS(t3) at the third time point t3 using the received reference value RS(t3) at the third time point t3 and the detection value DS(t3) at the third time point t3. When the comparison value CS(t3) at the third time point t3 is zero, the comparison unit 630 sets the comparison value CS(t3) at the third time point t3 to zero and transmits it to the determination unit 640. When the comparison value CS(t3) at the third time point t3 is not zero, the comparison unit 630 compares the first reference value RS(t1) at the first time point t1 with the detection value DS(t3) at the third time point t3 to calculate a value and transmits the value as the comparison value CS(t3) at the third time point t3 to the determination unit 640.

[0202] The determination unit 640 may receive the comparison value CS(t3) at the third time point t3 from the comparison unit 630, and may determine that no crack exists or an existing crack does not expand if the comparison value CS(t3) at the third time point t3 is zero.

[0203] When the comparison value CS(t3) at the third time point t3 is not zero, it is determined that a crack has occurred or that an existing crack has expanded. Then, the comparison value CS(t3) at the third time point t3 (a value obtained by comparing the first reference value RS(t1) at the first time point t1 with the detection value DS(t3) at the third time point t3) may be compared with a predetermined error range to determine whether there is a defect caused by a crack. Subsequently, the result may be transmitted to the output unit 700. If the comparison value CS(t3) at the third time point t3 exceeds the predetermined error range, the determination unit 640 determines that the sensing area SA has a defect caused by a crack. If the comparison value CS(t3) falls within the predetermined error range, the determination unit 640 determines that the sensing area SA has no defect caused by a crack.

[0204] As described above, by performing detection on the sensing area SA at several time points t1, t2, and t3, it is possible to determine not only whether a crack has occurred, but also when the crack has occurred and whether the crack has expanded. Fig.16In the example shown in , detection is performed on a single sensing area SA at several time points t1, t2, and t3 to detect whether there is a crack. However, it should be understood that the present disclosure is not limited thereto. As described above, more than one sensing area may be provided, and detection may be performed on each of the sensing areas at several time points.

[0205] Fig.17 is a block diagram for illustrating a method for detecting cracks according to some exemplary embodiments of the present disclosure. Fig.10 and Fig.16 A method for detecting cracks is described. In the following, the steps of the method will be briefly described.

[0206] Reference Fig. 9 , Fig.10 , Fig.16 and Fig.17 , a sensing area SA is determined in the sensor unit SU (step S10).

[0207] Subsequently, a reference value and an error range of the sensing area SA are determined (step S20 ). For example, the reference value may be stored in the first memory 610 , and the error range may be stored in the determination unit 640 .

[0208] Subsequently, it is determined whether cracks are detected at several time points (step S30).

[0209] If it is determined that cracks are not detected at several time points (No in step S30 ), a detection value of the sensing area SA is obtained (step S40 ). For example, the detection value is obtained from the sensing area SA and the detection value is stored in the second memory 620 .

[0210] Subsequently, the comparison value is calculated using the received reference value and the detection value (step S50). For example, the reference value and the detection value from the first memory 610 and the second memory 620, respectively, are transmitted to the comparison unit 630. The comparison unit 630 compares the reference value with the detection value to calculate the comparison value, and transmits the comparison value to the determination unit 640.

[0211] Subsequently, the predetermined error range is compared with the comparison value to determine whether there is a defect caused by a crack (step S60). For example, if the comparison value exceeds the predetermined error range, the determination unit 640 determines that the sensing area SA has a defect caused by a crack. If the comparison value falls within the predetermined error range, the determination unit 640 determines that the sensing area SA does not have a defect caused by a crack.

[0212] If it is determined that cracks are detected at several time points (Yes in step S30 ), the detection value DS( t1 ) at the first time point t1 is obtained (step S70 ).

[0213] Subsequently, the comparison value CS(t1) at the first time point t1 is calculated using the received reference value and the detection value DS(t1) at the first time point t1 (step S80).

[0214] Subsequently, a predetermined error range is compared with the comparison value CS(t1) to determine whether there is a defect due to a crack (step S90).

[0215] For example, if the comparison value CS(t1) at the first time point t1 exceeds the predetermined error range, the determination unit 640 determines that the sensing area SA has a defect caused by a crack. If the comparison value CS(t1) falls within the predetermined error range, the determination unit 640 determines that the sensing area SA has no defect caused by a crack.

[0216] Subsequently, if the comparison value CS(t1) at the first time point t1 is within a predetermined error range, so that it is determined that the sensing area SA is not a defective area caused by a crack, a detection value DS(t2) of the sensing area SA at the second time point t2 is obtained (step S100).

[0217] Subsequently, the comparison value CS(t2) at the second time point t2 is calculated using the detection value DS(t1) at the first time point t1 and the detection value DS(t2) at the second time point t2 (step S110).

[0218] Then, it is determined whether the comparison value CS(t2) at the second time point t2 is zero (step S120). When the comparison value CS(t2) at the second time point t2 is zero, it is determined that there is no crack or the existing crack has not expanded.

[0219] Subsequently, if the comparison value CS(t2) at the second time point t2 is not zero, it is determined that a crack exists or an existing crack has expanded (step S130).

[0220] Subsequently, a value obtained by comparing the reference value with the detection value DS(t2) at the second time point t2 is generated again as the comparison value CS(t1) at the first time point t1 (step S140).

[0221] Subsequently, the predetermined error range is compared with the comparison value CS(t1) at the first time point t1 to determine whether there is a defect caused by a crack (step S90).

[0222] exist Fig.17 In the example shown in , although detection is performed on a single sensing area SA at two time points t1 and t2 , this is merely exemplary. Detection may be performed on two or more sensing areas SA at three or more time points.

[0223] Fig.18 is a diagram schematically illustrating a region in which a hole is formed and a crack detector according to some exemplary embodiments of the present disclosure. Fig.19 is a diagram schematically illustrating a region in which a hole is formed and a crack detector according to some exemplary embodiments of the present disclosure. Fig. 20 is a diagram schematically illustrating a region in which a hole is formed and a crack detector according to some exemplary embodiments of the present disclosure. Fig.21 is a diagram schematically illustrating a region in which a hole is formed and a crack detector according to some exemplary embodiments of the present disclosure. Fig. 22 is a diagram schematically illustrating a region in which a hole is formed and a crack detector according to some exemplary embodiments of the present disclosure. Fig.23 Schematically illustrates a region formed with a hole and a crack detector according to some exemplary embodiments of the present disclosure. In addition to the different shapes of the hole and the sensing region, Figures 18 to 23 The example shown in Fig. 9 The examples shown in are substantially the same, and thus, some redundant descriptions may be omitted.

[0224] Reference Fig.18 and Fig.19 , the sensor unit SU may include a hole AH_1 and a sensing area SA_3. When viewed from the top, the hole AH_1 may have a circular shape having an opening on its side. For example, the hole AH_1 may have a circular shape having a bar-shaped hole connected to one side thereof. In addition, the second non-display area NDA2_1 may have a shape surrounding the hole AH_1.

[0225] like Fig.18 As shown in FIG. 1 , the sensing area SA_3 may be located in the second non-display area NDA2_1 and in a portion of the display area DA, and may surround the hole AH_1. The sensors SC located in the sensing area SA_3 may be defined as a sensor group EG_3. The crack detector 600 may determine whether there is a crack in the sensing area SA_3 by obtaining a detection value DS_3 from the sensor group EG_3 of the sensing area SA_3.

[0226] In addition, if Fig.19As shown in , the sensor unit SU may include a first sensing area SA1_2 and a second sensing area SA2_2. The first sensing area SA1_2 may be located in the second non-display area NDA2_1 and in a portion of the display area DA, and may surround the hole AH_1. The second sensing area SA2_2 may be located in the display area DA, and may be positioned in a shape surrounding the first sensing area SA1_2. The sensor SC located in the first sensing area SA1_1 may be defined as a first sensor group EG1_2, and the sensor SC located in the second sensing area SA2_1 may be defined as a second sensor group EG2_2. The crack detector 600 may obtain a first detection value DS1_2 and a second detection value DS2_2 from the first sensor group EG1_2 and the second sensor group EG2_2 of the first sensing area SA1_2 and the second sensing area SA2_2, respectively, thereby determining whether there is a crack in the first sensing area SA1_2 and the second sensing area SA2_2.

[0227] Reference Fig. 20 and Fig.21 , the sensor unit SU may include a hole AH_2. The hole AH_2 may have a notch shape. For example, the hole AH_2 may be formed by cutting a portion of the sensor unit SU into a quadrilateral form. However, it should be understood that the present disclosure is not limited thereto. The shape of the hole AH_2 of the sensor unit SU may have various notch shapes such as a polygonal shape or an elliptical shape. In addition, the second non-display area NDA2_2 may have a shape surrounding the hole AH_2.

[0228] like Fig. 20 As shown in FIG. 1 , the sensing area SA_4 of the sensor unit SU may be located in the second non-display area NDA2_2 and may surround the hole AH_2. The sensors SC located in the sensing area SA_4 may be defined as a sensor group EG_4. The crack detector 600 may determine whether there is a crack in the sensing area SA_4 by obtaining a detection value DS_4 from the sensor group EG_4 of the sensing area SA_4.

[0229] In addition, if Fig.21As shown in , the sensor unit SU may include a first sensing area SA1_3 and a second sensing area SA2_3. The first sensing area SA1_3 may be located in the second non-display area NDA2_2 and may surround the hole AH_2. The second sensing area SA2_3 may be located in the display area DA and may be positioned in a shape surrounding the first sensing area SA1_3. The sensor SC located in the first sensing area SA1_3 may be defined as a first sensor group EG1_3, and the sensor SC located in the second sensing area SA2_3 may be defined as a second sensor group EG2_3. The crack detector 600 may obtain a first detection value DS1_3 and a second detection value DS2_3 from the first sensor group EG1_3 and the second sensor group EG2_3 of the first sensing area SA1_3 and the second sensing area SA2_3, respectively, thereby determining whether there are cracks in the first sensing area SA1_3 and the second sensing area SA2_3.

[0230] Reference Fig. 22 and Fig.23 , the sensor unit SU may include a hole AH_3. The hole AH_3 may be formed by cutting a corner of the sensor unit SU into an L shape. However, it should be understood that the present disclosure is not limited thereto. The hole AH_3 may be formed by cutting a corner of the sensor unit SU into various shapes such as a polygonal shape or an elliptical shape. In addition, the second non-display area NDA2_3 may have a shape surrounding the hole AH_3.

[0231] like Fig. 22 As shown in FIG. 1 , the sensing area SA_5 of the sensor unit SU may be located in the second non-display area NDA2_3 and may surround the hole AH_3. The sensors SC located in the sensing area SA_5 may be defined as a sensor group EG_5. The crack detector 600 may determine whether there is a crack in the sensing area SA_5 by obtaining a detection value DS_5 from the sensor group EG_5 of the sensing area SA_5.

[0232] In addition, if Fig.23As shown in , the sensor unit SU may include a first sensing area SA1_4 and a second sensing area SA2_4. The first sensing area SA1_4 may be located in the second non-display area NDA2_3 and may surround the hole AH_3. The second sensing area SA2_4 may be located in the display area DA and may be positioned in a shape surrounding the first sensing area SA1_4. The sensor SC located in the first sensing area SA1_4 may be defined as a first sensor group EG1_4, and the sensor SC located in the second sensing area SA2_4 may be defined as a second sensor group EG2_4. The crack detector 600 may obtain a first detection value DS1_4 and a second detection value DS2_4 from the first sensor group EG1_4 and the second sensor group EG2_4 of the first sensing area SA1_4 and the second sensing area SA2_4, respectively, thereby determining whether there is a crack in the first sensing area SA1_4 and the second sensing area SA2_4.

[0233] Although Figures 18 to 23 The holes AH_1, AH_2 and AH_3 are shown to be formed in the sensor unit SU, but it should be understood that Figure 2 As shown in , the same holes as the holes AH_1 , AH_2 , and AH_3 of the sensor unit SU may also be formed in the display unit DU of the display device 10 .

Claims

1. Sensor unit, including: an aperture, the aperture being surrounded by a display area for displaying an image; a sensing region formed around the aperture, wherein at least one sensor is located in the sensing region; as well as A crack detector configured to output a first crack signal indicating a defect caused by a crack in the sensing area if a comparison value obtained by comparing a detection value from the at least one sensor with a reference value exceeds an error range.

2. The sensor unit according to claim 1, wherein: The crack detector is configured to output a second crack signal indicating that there is no defect due to a crack in the sensing area if the comparison value falls within the error range.

3. The sensor unit according to claim 2, wherein: The crack detector comprises: a first memory configured to store the reference value; a second memory configured to store the detection value; and A comparison unit configured to receive the reference value from the first memory and the detection value from the second memory, and compare the reference value with the detection value to generate the comparison value.

4. The sensor unit according to claim 3, wherein: The sensing area includes: a first sensing region having a first distance from the aperture and in which a first sensor is positioned; and a second sensing region having a second distance from the aperture and in which a second sensor is positioned, and Wherein, the second distance is greater than the first distance.

5. The sensor unit according to claim 4, wherein: If a first comparison value obtained by comparing a first detection value obtained from the first sensor in the first sensing area with a first reference value exceeds a first error range, the crack detector outputs the first crack signal, and if the first comparison value falls within the first error range, the crack detector outputs the second crack signal.

6. The sensor unit according to claim 5, wherein: If a second comparison value obtained by comparing a second detection value obtained from the second sensor in the second sensing area with a second reference value exceeds a second error range, the crack detector outputs a third crack signal, and if the second comparison value falls within the second error range, the crack detector outputs a fourth crack signal.

7. The sensor unit according to claim 6, wherein: The first reference value is different from the second reference value.

8. The sensor unit according to claim 7, wherein: The first error range is different from the second error range.

9. A method for detecting cracks, the method comprising: determining a sensing area in a sensor unit including a hole and a plurality of sensors, wherein the hole is surrounded by a display area for displaying an image; obtaining a detection value from the sensing area at a first point in time; and Whether there is a defect caused by a crack in the sensing region is determined by using the detection value at the first time point.

10. The method of claim 9, wherein: Determining the sensing area in the sensor unit includes: A reference value and an error range of the sensing area are set.

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