MOSFET-based transducer topology

Abstract

The present invention provides a MOSFET-based energy conversion topology structure, including at least four commutation modules, which are respectively connected to the positive and negative electrodes of the X-phase and Y-phase of the AC power supply, and the commutation module includes at least two MOSFETs, one end of a MOSFET is connected to the AC power supply, and the other end is connected to one end of another MOSFET, and the other end of the other MOSFET is output, and the two MOSFETs are turned on and off at the same time. The above energy conversion topology structure uses MOSFET devices to control medium and high frequency voltage signals, and can realize the switching of voltage signals between multiple channels, and the semiconductor devices required by the circuit are small in package, low in cost, and have a wide range of options.

Description

Technical Field

[0001] The present invention generally relates to the field of power electronics technology, and in particular to a MOSFET-based energy conversion topology structure, which is applied to the design of power electronics energy conversion circuits. Background Art

[0002] In terms of voltage signal control, the requirements include fast switching of DC high-power signals. This control circuit can be implemented by MOSFET, gallium nitride transistor or silicon carbide transistor, and the typical circuit is a half-bridge (full-bridge) drive circuit; fast switching of low-frequency and high-power signals can be implemented by thyristor, relay or switch, and the typical circuit is thyristor control circuit and relay control circuit; fast switching of medium and high-frequency high-power signals can be implemented by solid-state relays, but due to the large tube voltage drop, high heat generation and power consumption when turned on, and the large packaging volume of high-power solid-state relays, it is not conducive to the high integration of printed circuit boards. Therefore, the above circuits cannot be used stably for a long time for the fast switching of medium and high-frequency high-power signals.

[0003] The contents of the background technology section are merely the technologies known to the inventors and do not necessarily represent the prior art in the field. Summary of the invention

[0004] In response to one or more of the problems existing in the prior art, the present invention provides a MOSFET-based energy conversion topology structure, including at least four commutation modules, which are respectively connected to the positive and negative electrodes of the X-phase and Y-phase of the AC power supply, and the commutation module includes at least two MOSFETs, one end of one MOSFET is connected to the AC power supply, and the other end is connected to one end of another MOSFET, and the other end of the other MOSFET is the output, and the two MOSFETs are turned on and off at the same time.

[0005] Preferably, it also includes a relay control module for reducing the leakage current of the non-conducting commutation module. The relay control module includes a relay and a power resistor. The power resistor is connected between the output end of the non-conducting commutation module and the relay. The leakage current is controlled by the resistance value of the power resistor.

[0006] Preferably, the switching module further comprises a capacitor, which is arranged between the positive and negative electrodes of an external circuit that supplies power to the gate of the MOSFET, and serves as a bootstrap capacitor to raise the voltage so that the voltage difference at the control terminal is maintained at a set value.

[0007] Further, preferably, the relay control module also includes an NMOS tube, which is arranged at the enable end of the relay and is used to control the on and off of the relay.

[0008] Preferably, the MOSFET of the commutation module is an N-channel MOSFET.

[0009] Preferably, four switching modules are included, which are respectively connected to the positive and negative electrodes of the X-phase and Y-phase of the AC power supply, each switching module includes two MOSFETs, the sources of the two MOSFETs are connected, the drain of one MOSFET is connected to the AC power supply, and the drain of the other MOSFET is used as the AC output, and a capacitor is connected between the positive and negative electrodes of the external circuit that supplies power to the gates of the two MOSFETs.

[0010] Further, preferably, it also includes two relay control modules, which are respectively connected to the X-phase output terminal and the Y-phase output terminal of the commutation module, and the relay control module includes a relay, and a power resistor is arranged between the relay and the X-phase positive output terminal or the Y-phase positive output terminal of the commutation module, the positive enable terminal of the relay is connected to the external voltage through a current limiting resistor, and the negative enable terminal of the relay is connected to the external voltage through an NMOS tube.

[0011] Furthermore, preferably, a current-limiting resistor is provided between the NMOS tube and the external voltage.

[0012] Preferably, a fuse is provided at the positive output end of the reversing module.

[0013] Preferably, the positive output terminal and the negative output terminal of the commutation module are provided with a load power resistor and a transient suppression diode connected in parallel.

[0014] The above-mentioned MOSFET-based transducer topology uses MOSFET devices to control medium and high frequency voltage signals, which can realize the switching of voltage signals between multiple channels. In addition, the semiconductor devices required for the circuit have small packages, low costs, and a wide range of choices. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation of the present invention. In the accompanying drawings:

[0016] Figure 1 is a schematic diagram of a MOSFET-based energy conversion topology structure according to the present invention;

[0017] Figure 2 It is a schematic diagram of a preferred embodiment of a MOSFET-based energy conversion topology structure of the present invention;

[0018] Figure 3a It is a schematic diagram of the input voltage waveform amplitude;

[0019] Figure 3b It is a schematic diagram of the input voltage waveform frequency;

[0020] Figure 4aIt is a schematic diagram of the X-phase voltage output waveform;

[0021] Figure 4b It is a schematic diagram of the Y-phase voltage output waveform;

[0022] Figure 4c It is a schematic diagram of the X-phase voltage output frequency and current peak-to-peak value;

[0023] Figure 4d It is a schematic diagram of the Y-phase voltage output frequency and current peak-to-peak value. DETAILED DESCRIPTION

[0024] In the following, only some exemplary embodiments are briefly described. As those skilled in the art will appreciate, the described embodiments may be modified in various ways without departing from the spirit or scope of the present invention. Therefore, the drawings and descriptions are considered to be exemplary and non-restrictive in nature.

[0025] The terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, "plurality" means two or more, unless otherwise clearly and specifically defined.

[0026] The disclosure below provides many different embodiments or examples for realizing different structures of the present invention. In order to simplify the disclosure of the present invention, the components and settings of specific examples are described below. Of course, they are merely examples, and the purpose is not to limit the present invention. In addition, the present invention may repeat reference numerals and / or reference letters in different examples, and such repetition is for the purpose of simplification and clarity, and does not itself indicate the relationship between the various embodiments and / or settings discussed. The preferred embodiments of the present invention are described below in conjunction with the accompanying drawings, and it should be understood that the preferred embodiments described herein are only used to illustrate and explain the present invention, and are not used to limit the present invention.

[0027] Figure 1 Schematic diagram of the MOSFET-based energy conversion topology of the present invention, such as Figure 1 As shown, the MOSFET-based energy conversion topology structure includes four switching modules H1-H4 and two relay control modules J1-J2, wherein:

[0028] The four switching modules H1 to H4 are respectively connected to the positive and negative electrodes of the X phase and the Y phase of the AC signal source. Each switching module includes two MOSFETs. The sources of the two MOSFETs are connected, the drain of one MOSFET is connected to the AC power supply, and the drain of the other MOSFET is used as the AC output. A capacitor is connected between the positive and negative electrodes of the external circuit that supplies power to the gates of the two MOSFETs.

[0029] The two relay control modules are respectively connected to the X-phase output terminal and the Y-phase output terminal of the commutation module. The relay control module includes a relay. A power resistor is arranged between the relay and the X-phase positive output terminal or the Y-phase positive output terminal of the commutation module. The positive enable terminal of the relay is connected to the external voltage through a current limiting resistor, and the negative enable terminal of the relay is connected to the external voltage through an NMOS tube.

[0030] like Figure 1 As shown, the four switching modules are the first switching module H1, the second switching module H2, the third switching module H3 and the fourth switching module H4, and the two relay control modules are the first relay control module J1 and the second relay control module J2, wherein:

[0031] The first switching module H1 includes a first field effect transistor Q1, a second field effect transistor Q2 and a first capacitor C1. The source electrodes of the first field effect transistor Q1 and the second field effect transistor Q2 are connected, and the source voltage is recorded as U1. The drain electrode of the second field effect transistor Q2 is connected to the positive electrode of the X phase of the AC signal source. The drain electrode of the first field effect transistor Q1 serves as the output AC-OUT-X+ of the positive electrode of the X phase of the AC signal source. The voltage of the gate electrode of the first field effect transistor Q1 and the second field effect transistor Q2 is recorded as U2. The gate electrode is connected to an external circuit. A first capacitor C1 is provided between a voltage DC-X+A obtained by the gate electrode from the positive electrode of the external circuit and a voltage DC-XA obtained by the gate electrode from the negative electrode of the external circuit.

[0032] The third switching module H3 includes a fifth field effect transistor Q5, a sixth field effect transistor Q6 and a third capacitor C3, the fifth field effect transistor Q5 and the sixth field effect transistor Q6 are connected to each other in source, the source voltage is recorded as U3, the drain of the sixth field effect transistor Q6 is connected to the negative electrode of the X phase of the AC signal source, the drain of the fifth field effect transistor Q5 is used as the output AC-OUT-X- of the negative electrode of the X phase of the AC signal source, the gate voltage of the fifth field effect transistor Q5 and the sixth field effect transistor Q6 is recorded as U4, the gate is connected to the external circuit, and the third capacitor C3 is provided between the voltage DC-X+B obtained by the gate from the positive electrode of the external circuit and the voltage DC-XB obtained from the negative electrode of the external circuit;

[0033] The second switching module H2 includes a third field effect transistor Q3, a fourth field effect transistor Q4 and a second capacitor C2, the third field effect transistor Q3 and the fourth field effect transistor Q4 are connected to each other in source, the drain of the third field effect transistor Q3 is connected to the positive electrode of the Y phase of the AC signal source, the drain of the fourth field effect transistor Q4 is used as the output AC-OUT-Y+ of the positive electrode of the Y phase of the AC signal source, the gates of the third field effect transistor Q3 and the fourth field effect transistor Q4 are connected to an external circuit, and a second capacitor C2 is provided between the voltage DC-Y+A obtained by the gate from the positive electrode of the external circuit and the voltage DC-YA obtained from the negative electrode of the external circuit;

[0034] The fourth switching module H4 includes a seventh field effect transistor Q7, an eighth field effect transistor Q8 and a fourth capacitor C4, the seventh field effect transistor Q7 and the eighth field effect transistor Q8 are connected in source, the drain of the seventh field effect transistor Q7 is connected to the negative electrode of the Y phase of the AC signal source, the drain of the eighth field effect transistor Q8 is used as the output AC-OUT-Y- of the negative electrode of the Y phase of the AC signal source, the gates of the seventh field effect transistor Q7 and the eighth field effect transistor Q8 are connected to the external circuit, and the fourth capacitor C4 is provided between the voltage DC-Y+B obtained by the gate from the positive electrode of the external circuit and the voltage DC-YB obtained from the negative electrode of the external circuit;

[0035] The first relay control module J1 includes a relay U J1 ,Relay U J1 The positive and negative electrodes of the AC end are respectively connected to the output end AC-OUT-X+ of the first switching module Q1 and the output end AC-OUT-X- of the third switching module Q5. A power resistor R1 is arranged at the positive electrode of the AC end connected to the first switching module. The relay U J1 The positive pole of the DC end is connected to the external voltage VCC through the current limiting resistor R2, and the relay U J1 The positive electrode of the DC end is connected to the collector of the first NPN transistor T1, and the base of the first NPN transistor T1 is connected to the external voltage ENX through the current limiting resistor R3;

[0036] The second relay control module J2 includes a relay U J2 ,Relay U J2 The positive and negative electrodes of the AC end are respectively connected to the output end AC-OUT-Y+ of the second switching module Q4 and the output end AC-OUT-Y- of the fourth switching module Q8. A power resistor R5 is provided at the positive electrode of the AC end connected to the second switching module. The relay U J2 The positive pole of the DC end is connected to the external voltage VCC through the current limiting resistor R4, and the relay U J2 The positive electrode of the DC end is connected to the collector of the second NPN transistor T2, and the base of the second NPN transistor T2 is connected to the external voltage ENY through the current limiting resistor R6.

[0037] Among them, the AC signal source is used as the input terminal of the controlled medium and high frequency voltage signal. When DC-X+A, DC-XA and DC-X+B, DC-XB obtain voltages not lower than the MOSFET turn-on voltage V GS When Q1, Q2, Q5, and Q6 field effect tubes are turned on, the voltage between U1 and U2 and the voltage between U3 and U4 are V GS It is then bootstrapped to the input voltage, but the voltage difference between DC-X+A, DC-XA and DC-X+B, DC-XB will always remain V GS The input voltage signal can be output to AC-OUT-X+ and AC-OUT-X-. At this time, Q3, Q4, Q7, and Q8 are in the off state. The positive half-axis voltage is affected by the off state of Q3 and Q7 and cannot be transmitted backward. Although the negative half-axis voltage can be conducted backward through the body diodes of Q3 and Q7, it is also affected by the off state of Q4 and Q8 and cannot be transmitted backward. However, due to the MOSFET junction capacitance C OSS The existence of saturation leakage current I DSS , and as the input signal frequency increases, the capacitor impedance decreases, and the leakage current increases. Therefore, even if Q3, Q4, Q7, and Q8 remain closed, when the positive and negative half-axis voltages alternately operate on the four MOSFETs, there is still leakage current on the MOSFET output to the AC-OUT-Y+ and AC-OUT-Y- terminals. Therefore, it is necessary to add a second relay control module J2 to keep ENY at a high level and ENX at a low level, so that the control relay U J2 Enable, "dummy load" R5 is connected to AC-OUT-Y+, AC-OUT-Y-, so that the leakage current passes through R5, AC-OUT-Y+, AC-OUT-Y- terminal voltage is the voltage across R5, through Ohm's law U = IR, as long as R is small enough, AC-OUT-Y+, AC-OUT-Y- terminal voltage can be greatly reduced, this process can make AC-OUT-X+, AC-OUT-X- voltage approximately equal to the input voltage, and AC-OUT-Y+, AC-OUT-Y- terminal voltage is greatly limited, close to the "shutdown" effect. Similarly, if Q3, Q4, Q7, Q8 are turned on, Q1, Q2, Q5, Q6 are turned off, and ENX is kept high and ENY is kept low, the control relay U J1 Enable, "dummy load" R1 is connected to AC-OUT-X+, AC-OUT-X-, the voltage on AC-OUT-Y+, AC-OUT-Y- can be approximately equal to the input voltage, and the voltage on AC-OUT-X+, AC-OUT-X- is close to the "off" effect. In this way, the voltage in the X and Y directions is alternately switched.

[0038] In addition to adopting a similar DC voltage control method, the MOSFET-based transducer topology structure described in the present invention adds a relay control circuit, introduces a "dummy load", and uses a reasonable gating method to control medium-high-frequency and high-power voltage signals. The input medium-high-frequency and high-power voltage signals can be output alternately at the output end, breaking the traditional idea that MOSFET cannot control medium-high-frequency and high-power voltage signals.

[0039] Figure 2 Schematic diagram of a preferred embodiment of the MOSFET-based energy conversion topology structure of the present invention, as shown in FIG. Figure 2 As shown, the MOSFET-based energy conversion topology includes four switching modules H1~H4 and two relay control modules J1 and J2. The positive output ends of the first switching module H1 and the second switching module H2 are provided with fuses F1 and F2. The positive output end AC-OUT-X+ of the first switching module H1 and the negative output end AC-OUT-X- of the third switching module H3 are provided with a parallel load power resistor R7 and a transient suppression diode D1. The positive output end of the second switching module H2 and the negative output end of the fourth switching module H4 are provided with a parallel load power resistor R8 and a transient suppression diode D2. As shown in Figures 3a and 3b, a peak-to-peak value of 130V, 200KHz AC signal enters from the AC signal source end. Within 900ms, DC-X+A, DC-XA, DC-X+B, and DC-XB externally input 5V voltage, and DC-Y+A, DC-YA, DC-Y+B and DC-YB remain suspended, and an external 3.3V high level is input to the ENY terminal to close T2 and connect R5 to the AC-OUT-Y+ and AC-OUT-Y- terminals. At this time, the oscilloscope probe is clamped at the AC-OUT-X+ and AC-OUT-X- terminals, and an approximate input AC signal can be obtained. The current on the R7 load can be monitored to be about 1.3A through the current probe, while the voltage at the AC-OUT-Y+ and AC-OUT-Y- terminals is "turned off". Similarly, in the next 900ms cycle, DC-Y+A, DC-YA, DC-Y+B, DC-YB are externally input with 5V voltage, DC-X+A, DC-XA, DC-X+B, DC-XB remain suspended, and the ENX terminal is externally input with 3.3V high level to close T1, which can make the voltage of AC-OUT-Y+, AC-OUT-Y- terminal be "opened", and the voltage of AC-OUT-X+, AC-OUT-X- terminal be "closed", and the current on R8 load is also about 1.3A. Figures 4a-4dAs shown, the output voltages of the X-phase and Y-phase are complementary, and alternate with a conversion period of 900ms, with the amplitude and frequency remaining basically unchanged. With a medium-high frequency voltage of 130V peak-to-peak and 200kHz frequency, the circuit can realize the alternating conversion of the X-phase and Y-phase voltages, and when a high-power load is loaded at the output end, the current output capacity can reach about 1.3A, and it can operate stably for a long time. Figures 3a to 4d It is the result of saving the waveform obtained by testing with an oscilloscope (Tektronix DPO2012B), and setting different horizontal and vertical scales according to different test requirements, which does not affect the signal itself and facilitates the observation and research of the signal. For example, Figure 3a Medium, horizontal scale 200ms / div, 1 channel vertical scale 50V / div; Figure 3b Middle, horizontal scale 2us / div, 1 channel vertical scale 50V / div; Figure 4a Medium, horizontal scale 400ms / div, 1 channel vertical scale 50V / div; Figure 4b Middle, horizontal scale 400ms / div, vertical scale 50V / div; Figure 4c Medium, horizontal scale 2us / div, 1 channel vertical scale 50V / div, 2 channel vertical scale 500mA / div; Figure 4d In the middle, the horizontal scale is 2us / div, the vertical scale of 1 channel is 50V / div, and the vertical scale of 2 channels is 500mA / div.

[0040] In a specific embodiment of the present invention, F1 and F2 are UN2410-1300FS, fast-acting fuses with a rated current of 3A and a maximum voltage of 250V, which are used to protect the circuit output voltage and current from exceeding the design limit; R7 and R8 are load power resistors, which are 100Ohm 150W aluminum shell power resistors, which act as loads to test the circuit load capacity; D1 and D2 are SMBJ400CA avalanche diodes with a reverse shutdown voltage of 400V, which are used to improve the electrostatic protection level of the circuit; Q1, Q2, Q3, Q4, Q5, Q6, Q7, and Q8 are N-channel MOSFET tubes, which are BSC320N20NS3G, with V between the source and drain electrodes. DS is 200V, the current can withstand 36A, and the output junction capacitance C OSS Maximum 180pF, maximum leakage current I at room temperature DSS 1nA (Condition: V DS =160V,V GS =0). From the basic principle diagram of MOSFET, we can know that there are junction capacitances between the gate, source and drain of MOSFET, which are C GD , C GS , C DS , when the MOSFET is off, VGS =0, the gate-source can be regarded as a short circuit, so the output junction capacitance of MOSFET is C GD +C DS , that is, C OSS . The capacitance impedance It can be seen that under certain frequency conditions, the smaller the capacitance, the greater the impedance. Therefore, if the C OSS The smaller the value, the better the "shutdown" effect, and this value is related to the leakage current I DSS Positive correlation; C1, C2, C3, C4 are ceramic capacitors, GRM219B31H225KE15D, Murata 2.2uF, 50V, 0805 package chip capacitors, which are used as bootstrap capacitors to raise the voltage so that the voltage difference at the control end is always maintained at 5V; U J1 , U J2 For G3VM-201G1, MOSFET relay, load voltage V OFF The peak voltage is 200V and the continuous current is I O The current of the resistor is 200mA, which is used to connect the "dummy load" according to the cycle, so as to control the energy conversion cycle; R1 and R5 are chip power resistors, which are 25121WF510JT4E, 51Ohm, and 1W chip resistors, which act as the "dummy load" of the circuit; R2 and R4 are current limiting resistors, which are 0603WAF1001T5E, which act as the current limiting resistor of the MOSFET control end, and its forward current I F It needs to be below 25mA. Preferably, R2 and R4 are 1KOhm, 1 / 8W chip resistors, and the forward current I F 5mA; T1 and T2 are SS8050, NPN transistors, used to facilitate MCU to drive MOSFET control terminals ENX and ENY; R3 and R6 are current limiting resistors, which are 0603WAF1001T5E, 1KOhm, 1 / 10W chip resistors, used to prevent the base current of SS8050 from being too large.

[0041] The MOSFET-based energy conversion topology structure of the present invention uses a simple and efficient field effect tube and a combination of resistor and capacitor elements to perform commutation control on medium and high frequency voltage signals, has a strong current output capability, and can operate stably for a long time.

[0042] The above gives an embodiment including four commutation modules and two relay control modules, but the present invention is not limited to this. The positive electrode or / and negative electrode of each phase of the AC signal source can include multiple commutation modules respectively, and can also include a multi-channel relay control module, and can also include multiple relay control modules. Other switch control modules connected to the output of the commutation module can also be used. That is to say, the MOSFET-based energy conversion topology structure of the present invention can include at least four commutation modules, which are respectively connected to the positive and negative electrodes of the X-phase and Y-phase of the AC power supply. The commutation module includes at least two MOSFETs, one end of a MOSFET is connected to the AC power supply, and the other end is connected to one end of another MOSFET, and the other end of the other MOSFET is output. The two MOSFETs are turned on and off at the same time. The MOSFET-based energy conversion topology structure of the present invention can also include one or more relay control modules for reducing the leakage current of the non-conducting commutation module. The relay control module includes a relay and a power resistor. The power resistor is connected between the output end of the non-conducting commutation module and the relay, and the leakage current is controlled by the resistance value of the power resistor.

[0043] Finally, it should be noted that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art can still modify the technical solutions described in the aforementioned embodiments or replace some of the technical features therein by equivalents. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A MOSFET-based energy conversion topology, characterized in that: It includes four switching modules and two relay control modules, wherein the first switching module and the third switching module of the four switching modules are respectively connected to the positive and negative electrodes of the X phase of the AC power supply, and the second switching module and the fourth switching module of the four switching modules are respectively connected to the positive and negative electrodes of the Y phase of the AC power supply, and the switching module includes two MOSFETs, one end of a MOSFET is connected to the AC power supply, and the other end is connected to one end of another MOSFET, and the other end of the other MOSFET is output, and the two MOSFETs are turned on and off at the same time, when the first switching module and the third switching module are turned on, the second switching module and the fourth switching module are turned off, and when the first switching module and the third switching module are turned off, the second switching module and the fourth switching module are turned on, and the relay control module includes a relay and a power resistor, and the power resistor is connected between the relay and the X-phase positive output end or the Y-phase positive output end of the switching module; wherein, When the first commutation module and the third commutation module are turned on so that the medium-high frequency high-power voltage signal is output at the X-phase output terminal, the second relay control module of the two relay control modules limits the voltage of the Y-phase output terminal of the second commutation module and the fourth commutation module that are not turned on based on the enabling of the relay; When the second commutation module and the fourth commutation module are turned on so that the medium-high frequency and high-power voltage signal is output at the Y-phase output terminal, the first relay control module of the two relay control modules limits the X-phase output terminal voltage of the first commutation module and the third commutation module which are not turned on based on the enabling of the relay.

2. The MOSFET-based energy conversion topology according to claim 1, characterized in that: The relay module connects the power resistor as a dummy load to the output end of the non-conducting switching module based on the enabling of the relay, so as to limit the output end voltage through the resistance value of the power resistor.

3. The MOSFET-based energy conversion topology according to claim 1, characterized in that: The switching module also includes a capacitor, which is arranged between the positive and negative electrodes of the external circuit that supplies power to the gate of the MOSFET, and acts as a bootstrap capacitor to raise the voltage so that the voltage difference at the control terminal is maintained at a set value.

4. The MOSFET-based energy conversion topology according to claim 1, characterized in that: The relay control module also includes a transistor, which is arranged at the enable end of the relay and is used to control the on and off of the relay.

5. The MOSFET-based energy conversion topology according to claim 1, characterized in that: The MOSFET in the commutation module is an N-channel MOSFET.

6. The MOSFET-based energy conversion topology according to claim 1, characterized in that: The sources of the two MOSFETs of each switching module are connected, the drain of one MOSFET is connected to the AC power supply, and the drain of the other MOSFET is used as the AC output. A capacitor is connected between the positive and negative electrodes of the external circuit that supplies power to the gates of the two MOSFETs.

7. The MOSFET-based energy conversion topology structure according to claim 6, characterized in that: The positive enabling terminal of the relay is connected to an external voltage through a current limiting resistor, and the negative enabling terminal of the relay is grounded through a transistor.

8. The MOSFET-based energy conversion topology according to claim 7, characterized in that: The base of the transistor is connected to the enable signal through a current limiting resistor.

9. The MOSFET-based energy conversion topology according to claim 1, characterized in that: The positive output end of the reversing module is provided with a fuse.

10. The MOSFET-based energy conversion topology according to any one of claims 1 to 9, characterized in that: The positive output terminal and the negative output terminal of the commutation module are provided with a load power resistor and a transient suppression diode connected in parallel.

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