A gas distribution device for plasma enhanced atomic layer deposition equipment for optical thin films

Abstract

The present invention relates to the field of thin film preparation technology, and in particular to a gas distribution device for a plasma enhanced atomic layer deposition device for optical thin films, characterized in that: the gas distribution device comprises a source gas distribution pipe and a gas dispersion mechanism, wherein the source gas distribution pipe is provided with a gas outlet hole, and the gas dispersion mechanism is located on the gas outlet path of the gas outlet hole provided on the source gas distribution pipe. The advantages of the present invention are: 1) it can realize the simultaneous production of film layers of various types and different materials in a single plasma enhanced atomic layer deposition chamber; 2) it can realize uniform distribution of airflow in the process chamber, and can quickly realize rapid purging and switching of different source gases; 3) it can realize rapid adjustment of the uniformity of the workpiece film layer and the optical constants of the film layer; 4) it has a simple and reasonable structure, is easy to install and maintain later, and is suitable for promotion.

Description

Technical Field

[0001] The invention relates to the technical field of thin film preparation, in particular to a gas distribution device of plasma enhanced atomic layer deposition equipment for optical thin films. Background Art

[0002] Traditional atomic layer deposition equipment is often only used to prepare simple single-layer films, such as a single coating of SiO2 or Al2O3. Therefore, there is often only a gas distribution system related to a simple single film layer in the process chamber of the atomic layer deposition equipment. Optical thin films usually contain two or more film layers, so the requirements for the gas distribution system that directly affects the film formation effect are significantly increased; for example, optical thin films have high requirements for optical constant refractive index, absorption rate and thickness uniformity; and the gas distribution system of traditional atomic layer deposition equipment can no longer meet the production needs of optical thin films. Summary of the invention

[0003] The purpose of the present invention is to provide a gas distribution device for a plasma enhanced atomic layer deposition equipment for optical thin films in response to the above-mentioned deficiencies in the prior art. By arranging multiple devices or structures that can achieve gas uniformity on the flow path of the gas source in the equipment, uniform deposition of single-layer or multi-layer optical films of different materials can be achieved.

[0004] The purpose of the present invention is achieved by the following technical solutions:

[0005] A gas distribution device for a plasma enhanced atomic layer deposition device for an optical thin film is arranged on the plasma enhanced atomic layer deposition device, the plasma enhanced atomic layer deposition device includes a plasma chamber and a process chamber, and the plasma chamber is communicated with the process chamber, and is characterized in that: the gas distribution device includes a source gas distribution pipe and a gas diffusion mechanism, wherein the source gas distribution pipe is provided with an air outlet hole, and the gas diffusion mechanism is located on the gas outlet path of the air outlet hole opened on the source gas distribution pipe.

[0006] The air diffusion mechanism is located directly opposite to the air outlet hole on the source air distribution pipe, that is, the air outlet hole is directly opposite to the air diffusion mechanism.

[0007] The source gas distribution pipe and the gas diffusion mechanism are arranged in the process chamber and adjacent to the plasma chamber.

[0008] Preferably, the air outlet holes are arranged in a linear array on the source air distribution pipe, and the aperture sizes of the air outlet holes and the gaps between the air outlet holes can be adjusted during manufacturing according to different process parameters.

[0009] The gas distribution device comprises a plasma gas inlet plate which is arranged inside the plasma cavity and adjacent to the gas inlet of the plasma cavity, and the plasma gas inlet plate is provided with gas inlet plate holes which are evenly arranged.

[0010] Preferably, the air inlet plate holes are arranged in a planar array on the plasma air inlet plate, and the aperture sizes of the air inlet plate holes can be adjusted during manufacturing according to different process parameters.

[0011] The gas distribution device comprises a plasma gas distribution plate arranged between the plasma chamber and the process chamber, and the plasma gas distribution plate is provided with plasma gas distribution plate gas outlet holes which are evenly arranged.

[0012] Preferably, the gas outlet holes of the plasma gas equalizing plate are arranged in a planar array on the plasma gas equalizing plate, and the aperture sizes of the gas outlet holes of the plasma gas equalizing plate can be adjusted during manufacturing according to different process parameters.

[0013] The plasma gas distribution plates and the source gas distribution pipes are arranged in a parallel array.

[0014] The gas distribution device comprises a gas outlet equalizing plate which is arranged inside the process chamber and adjacent to the gas outlet of the process chamber, and the gas outlet equalizing plate is provided with evenly arranged gas outlet equalizing plate air outlet holes.

[0015] Preferably, the air outlet holes of the air extraction port and the air equalizing plate are arranged in a planar array on the air extraction port and the air outlet holes of the air extraction port and the air equalizing plate can be adjusted during manufacturing according to different process parameters.

[0016] A workpiece rack is arranged in the process chamber, a plurality of source gas distribution pipe arrays are arranged between the plasma chamber and the workpiece rack, and the source gas distribution pipes correspond to gas sources separately.

[0017] The air outlet holes opened on the source air distribution pipe are evenly arranged.

[0018] The gas distribution device comprises a plasma gas distribution plate arranged between the plasma chamber and the process chamber, and the plasma gas distribution plate is provided with plasma gas distribution plate gas outlet holes which are evenly arranged.

[0019] Preferably, the gas outlet holes of the plasma gas equalizing plate are arranged in a planar array on the plasma gas equalizing plate, and the aperture sizes of the gas outlet holes of the plasma gas equalizing plate can be adjusted independently.

[0020] The plasma gas distribution plates and the source gas distribution pipes are arranged in a parallel array.

[0021] The arrangement state of the source gas distribution pipe and the gas diffusion mechanism meets the requirement that the gas outlet holes opened therein match the stacking positions of the workpieces loaded in the plasma enhanced atomic layer deposition equipment and constitute corresponding requirements.

[0022] The advantages of the present invention are: 1) it can realize the simultaneous production of film layers of various types and different materials in a single plasma enhanced atomic layer deposition chamber; 2) it can realize uniform distribution of airflow in the process chamber, and can quickly realize rapid purge and switching of different source gases; 3) it can realize rapid adjustment of the uniformity of the workpiece film layer and the optical constants of the film layer; 4) it has a simple and reasonable structure, is easy to install and maintain later, and is suitable for promotion. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a structural schematic diagram of the present invention. DETAILED DESCRIPTION

[0024] The features of the present invention and other related features are further described in detail below through embodiments in conjunction with the accompanying drawings to facilitate understanding by those skilled in the art:

[0025] like Figure 1 As shown in the figure, the marks 1-16 respectively represent: external vacuum chamber 1, process chamber 2, workpiece 3, plasma component quartz chamber 4, plasma component copper tube coil 5, plasma component air inlet 6, plasma equalizing plate 7, plasma equalizing plate air outlet 8, source air distribution pipe 9, air diffusion pipe 10, workpiece rotating frame 11, exhaust port equalizing plate 12, exhaust port equalizing plate air outlet 13, exhaust port 14, plasma air inlet plate 15, and air inlet plate hole 16.

[0026] Embodiment: The gas distribution device of the plasma enhanced atomic layer deposition apparatus for optical thin films in this embodiment is arranged on the plasma enhanced atomic layer deposition apparatus, and can be used for the deposition of single-layer or multi-layer optical thin films of different materials.

[0027] like Figure 1 As shown, the plasma enhanced atomic layer deposition equipment body in this embodiment includes an outer vacuum chamber 1, a process chamber 2, and a plasma component quartz chamber 4 serving as a plasma chamber.

[0028] A plasma component gas inlet 6 is provided at one end of the plasma component quartz cavity 4, and plasma-related source gas in the plasma enhanced atomic layer deposition film forming process enters the interior of the plasma component quartz cavity 4 through the plasma component gas inlet 6. An array of plasma component steel tube coils 5 are arranged around the plasma component quartz cavity 4, and plasma is generated under the action of a radio frequency power source loaded on the plasma component steel tube coils 5, so that the plasma-related source gas in the plasma component quartz cavity 4 is activated or excited.

[0029] The process chamber 2 is connected to the plasma component quartz chamber 4 and the internal structure is connected, so that the plasma-related source gas activated or excited by the plasma component quartz chamber 4 can pass into the interior of the process chamber 2. The process chamber 2 is a film-forming space for the workpiece 3, and a rotatable workpiece rotating frame 11 is arranged inside it. The workpiece 3 is loaded on the workpiece rotating frame 11 and rotates with it, thereby improving its film formation uniformity. The other end of the process chamber 2 is a gas extraction port 14, which is used to exhaust excess gas atoms and molecules.

[0030] The outer vacuum chamber 1 is arranged at the periphery of the process chamber 2 , and the interior of the outer vacuum chamber 1 is vacuum, so as to further provide the process chamber 2 with a vacuum environment required by the plasma enhanced atomic layer deposition film forming process.

[0031] like Figure 1 As shown, the gas distribution device in this embodiment includes a plasma gas inlet plate 15, a plasma gas equalizing plate 7, a source gas distribution pipe 9, a gas diffusion pipe 10 and a gas exhaust port gas equalizing plate 12 which are arranged in sequence from the plasma component gas inlet 6 to the gas exhaust port 14. Through the arrangement of these devices or structures, uniformity can be guaranteed in the entire gas flow path, and the needs of the plasma enhanced atomic layer deposition film forming process are met, thereby improving the film forming quality.

[0032] The plasma inlet plate 15 is arranged inside the plasma component quartz cavity 4 and is arranged close to the position of the plasma component inlet port 6, and the outer contour shape and size of the plasma inlet plate 15 match the inner contour shape and size of the plasma component quartz cavity 4, that is, it is ensured that all plasma-related source gases entering the plasma component quartz cavity 4 through the plasma component inlet port 6 pass through the plasma inlet plate 15. The plasma inlet plate 15 is provided with a surface array of inlet plate holes 16, and the plasma-related source gases can be evenly distributed in the gas inside the plasma component quartz cavity 4 under the action of the inlet plate holes 16, which is beneficial to the efficiency and quality of subsequent plasma activation or excitation of the plasma-related source gases.

[0033] The plasma uniform gas plate 7 is arranged at the connection position between the process chamber 2 and the plasma component quartz chamber 4, and a surface array of plasma uniform gas plate outlet holes 8 are provided on the surface of the plasma uniform gas plate 7 to make the gas outputted from the plasma component quartz chamber 4 uniform. The area of ​​the plasma uniform gas plate outlet holes 8 arranged on the plasma uniform gas plate 7 meets the requirement of covering the gas outputted area of ​​the plasma component quartz chamber 4 to ensure that the relevant source gases outputted from the plasma component quartz chamber 4 to the outside enter the interior of the process chamber 2 through the plasma uniform gas plate 7.

[0034] The source gas distribution pipe 9 is arranged between the process chamber 2 and the plasma component quartz chamber 4, specifically, Figure 1 The plasma uniform gas plate 7 and the workpiece rotating frame 11 are shown. The number of source gas distribution pipes 9 can be designed according to the number of sources involved in the plasma enhanced atomic layer deposition process, that is, when preparing film layers of various types and different materials, a number of source gas distribution pipes 9 corresponding to the number of sources used in the film layers can be set. Several source gas distribution pipes 9 can be arranged in an array between the process chamber 2 and the plasma component quartz chamber 4, and each source gas distribution pipe 9 corresponds to a type of source. The source gas distribution pipe 9 is provided with gas outlet holes arranged in a linear array, and these gas outlet holes face the workpiece rotating frame 11, so that the source gas entering the process chamber 2 through the gas outlet holes can flow to the workpiece 3. A gas diffusion pipe 10 as a gas diffusion mechanism is provided behind the gas distribution direction of the source gas distribution pipe 9, that is, on the gas outlet path of the gas outlet hole. The gas diffusion pipe 10 can play a diversion role on the source gas, thereby ensuring that the source gas input through the source gas distribution pipe 9 is evenly distributed.

[0035] The exhaust port equalizing plate 12 is arranged inside the process chamber 2 and is located between the workpiece rotating frame 11 and the exhaust 14. A surface array of exhaust port equalizing plate outlet holes 13 are opened on its surface to adjust the flow direction and uniform distribution of gas in the process chamber 2.

[0036] When this embodiment is used, it has the following process flow:

[0037] The plasma-related source gas enters the plasma inlet plate 15 and the front through the plasma component inlet port 6, and then is evenly dispersed into the interior of the plasma component quartz cavity 4 through the inlet plate hole 16. Plasma is generated under the action of the RF power source loaded on the plasma component copper tube coil 5, and the activated or excited gas enters the process cavity 2 through the plasma gas plate outlet hole 8 on the plasma gas plate 7. After the gas atoms are deposited on the workpiece 3, the remaining gas enters the gas outlet 14 through the gas outlet gas outlet hole 13 on the gas outlet gas plate 12, and is discharged from the process cavity 2.

[0038] At the same time, the source-related heating gas entering from the source gas distribution pipe 9 passes through the gas diffusion pipe 10 and enters the process chamber 2. After single-atom or molecular adsorption on the workpiece surface, the excess gas atoms or molecules pass through the gas outlet hole 13 on the gas outlet equalizing plate 12 and then enter the gas outlet 14.

[0039] In the specific implementation of this embodiment: the arrangement of the source gas distribution pipe 9 and the diffuser pipe 10 meets the requirement that the gas outlet holes provided therein match and correspond to the stacking position of the workpiece 3. Specifically, during the actual use of the plasma enhanced atomic layer deposition device, the workpiece 3 is generally stacked horizontally (such as Figure 1As shown) or stacked vertically; when several workpieces 3 are used Figure 1 When the workpieces 3 are stacked horizontally on the workpiece rotating frame 11, there is a certain gap between each workpiece 3 in the height direction. At this time, the source gas distribution pipe 9 and the diffuser pipe 10 in the shape of a tube are arranged vertically in the process chamber 2, and the air outlet holes on the source gas distribution pipe 9 correspond to each workpiece 3 one by one, ensuring that each workpiece 3 has a corresponding air outlet hole; and when the workpieces 3 are arranged vertically, there is a certain gap between each workpiece 3 in the horizontal direction. At this time, the source gas distribution pipe 9 and the diffuser pipe 10 are arranged horizontally in the process chamber 2, and each workpiece 3 has a corresponding air outlet hole. In general, when a number of workpieces 3 are loaded in a plasma enhanced atomic layer deposition device for film formation, it is preferred to ensure that each workpiece 3 has a single corresponding air outlet hole to improve the film formation quality.

[0040] The diffuser pipe 10 is located directly opposite to the air outlet on the source air distribution pipe 9, that is, the air outlet faces the diffuser pipe 10, so as to ensure that the source gas input through the source air distribution pipe 9 can flow vertically to the diffuser pipe 10 and flow evenly in the process chamber 2 under the diversion effect of the diffuser pipe 10.

[0041] The aperture sizes of the surface array holes on the plasma inlet plate 15, the plasma uniform plate 7 and the exhaust port uniform plate 12 can be independently adjusted during manufacturing according to different processes to further improve the uniformity of gas flow. At the same time, the aperture of the linear array of outlet holes on the source gas distribution pipe 9 and the gap between the outlet holes can also be adjusted to achieve the adjustment of the airflow and pressure in the process chamber 2, and then local adjustment can be made according to the film uniformity or optical properties required by the workpiece 3 to improve product quality.

[0042] In addition to the use of the diffuser pipe 10 that can achieve the flow diversion effect as the diffuser mechanism in this embodiment, other mechanisms that can achieve the flow diversion effect, such as a diffuser plate, can also be used.

[0043] The various source gas distribution pipes 9 and the plasma gas distribution plates 7 are arranged in parallel array to further improve the uniformity of the gas.

[0044] Although the above embodiments have described in detail the concepts and embodiments of the present invention with reference to the accompanying drawings, ordinary technicians in this field can recognize that various improvements and changes can still be made to the present invention without departing from the scope of the claims, so they are not described one by one here.

Claims

1. A gas distribution device for a plasma enhanced atomic layer deposition device for optical thin films, arranged on the plasma enhanced atomic layer deposition device, the plasma enhanced atomic layer deposition device comprising a plasma chamber and a process chamber, and the plasma chamber is connected to the process chamber, characterized in that: The gas distribution device comprises a source gas distribution pipe and a gas diffusion mechanism, wherein the source gas distribution pipe is provided with a gas outlet hole, and the gas diffusion mechanism is located on the gas outlet path of the gas outlet hole provided on the source gas distribution pipe; the source gas distribution pipe and the gas diffusion mechanism are arranged in the process chamber and adjacent to the plasma chamber; The gas distribution device comprises a plasma gas inlet plate arranged inside the plasma cavity and adjacent to the gas inlet of the plasma cavity, and the plasma gas inlet plate is provided with gas inlet plate holes arranged evenly; The gas distribution device comprises a plasma gas distribution plate arranged between the plasma chamber and the process chamber, and the plasma gas distribution plate is provided with uniformly arranged plasma gas distribution plate gas outlet holes; The plasma gas distribution plate and the source gas distribution pipe are arranged in a parallel array; The gas distribution device comprises a gas outlet equalizing plate which is arranged inside the process chamber and adjacent to the gas outlet of the process chamber, and the gas outlet equalizing plate is provided with evenly arranged gas outlet equalizing plate air outlet holes.

2. The gas distribution device of the plasma enhanced atomic layer deposition equipment for optical thin films according to claim 1, characterized in that: The air diffusion mechanism is located directly opposite to the air outlet hole on the source air distribution pipe, that is, the air outlet hole is directly opposite to the air diffusion mechanism.

3. The gas distribution device of the plasma enhanced atomic layer deposition equipment for optical thin films according to claim 1, characterized in that: A workpiece rack is arranged in the process chamber, a plurality of source gas distribution pipe arrays are arranged between the plasma chamber and the workpiece rack, and the source gas distribution pipes correspond to gas sources separately.

4. The gas distribution device of the plasma enhanced atomic layer deposition equipment for optical thin films according to claim 1, characterized in that: The air outlet holes opened on the source air distribution pipe are evenly arranged.

5. The gas distribution device of the plasma enhanced atomic layer deposition equipment for optical thin films according to claim 1, characterized in that: The arrangement state of the source gas distribution pipe and the gas diffusion mechanism meets the requirement that the gas outlet holes opened therein match the stacking positions of the workpieces loaded in the plasma enhanced atomic layer deposition device and constitute corresponding requirements.

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