An optical signal transmitting device for 5G communication

Abstract

The present invention discloses an optical signal transmitting device for 5G communication, comprising: an optical coupler, an upper modulation arm, the upper modulation arm is connected to the optical coupler, a lower modulation arm, the lower modulation arm is connected to the optical coupler, a control unit, the control unit is electrically connected to the upper modulation arm and the lower modulation arm, an upper optical beam splitter, the upper optical beam splitter is connected to the upper modulation arm, and a lower optical beam splitter, the lower optical beam splitter is connected to the lower modulation arm. The present invention solves the problems of cost, energy consumption, integration, etc. faced in the case of mass application of optical signal transmitting chips.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor integrated circuit devices, and more specifically to an optical signal transmitting device for 5G communication. Background Art

[0002] At present, with the gradual deployment of 5G mobile communications, the demand for optical signal transceiver chips will be 3 to 6 times that of 4G mobile communications.

[0003] However, the fronthaul and midhaul functions of 5G services mainly rely on optical signal transmitting devices between various layers of equipment. This device has the problems of long modulation arms, large size, high energy consumption and low integration.

[0004] Therefore, how to provide an optical signal transmitting device for 5G communication that can solve the above problems is an issue that technical personnel in this field urgently need to solve. Summary of the invention

[0005] In view of this, the present invention provides an optical signal transmitting device for 5G communication, which can be effectively applied to three major scenarios: metropolitan access layer, metropolitan aggregation layer, and metropolitan core layer / provincial trunk line, to solve the problems of cost, energy consumption, and integration faced in the case of large-scale application of optical signal transmitting chips.

[0006] In order to achieve the above object, the present invention adopts the following technical solution:

[0007] An optical signal transmitting device for 5G communication, comprising:

[0008] An optical coupler, the optical coupler is used to split the input continuous light and combine the output continuous light;

[0009] An upper modulation arm, the upper modulation arm is connected to the optical coupler, and the upper modulation arm is used to adjust the phase of the returned input light;

[0010] A lower modulation arm, the lower modulation arm is connected to the optical coupler, and the lower modulation arm is used to adjust the phase of the returned input light;

[0011] A control unit, the control unit is electrically connected to the upper modulation arm and the lower modulation arm, and the control unit is used to apply a bias voltage to the upper modulation arm and the lower modulation arm;

[0012] An upper optical beam splitter, the upper optical beam splitter is connected to the upper modulation arm, and the optical beam splitter is used to split light;

[0013] A lower light beam splitter is connected to the lower modulation arm and is used for splitting light.

[0014] Preferably, the control unit includes: a first diode, a second diode, a first capacitor, a first inductor, a second inductor, an electrical signal loading unit and a static bias voltage loading unit, the positive electrode of the first diode is connected to one end of the first capacitor and one end of the first inductor, the negative electrode of the first diode is connected to one end of the second inductor and the negative electrode of the second diode, the positive electrode of the second diode is grounded and connected to the other end of the first inductor, one end of the electrical signal loading unit and the negative electrode of the static bias voltage loading unit, the other end of the electrical signal loading unit is connected to the other end of the first inductor, and the positive electrode of the static bias voltage loading unit is connected to the other end of the second inductor.

[0015] Preferably, it further comprises: an upper ring, wherein the upper ring is connected to the upper beam splitter.

[0016] Preferably, it further comprises: a lower circular ring, wherein the lower circular ring is connected to the lower optical beam splitter.

[0017] The effect of using the circular ring is that light can be reflected back to the upper modulation arm and the lower modulation arm through the upper circular ring and the lower circular ring, thereby reducing the length of the modulation arm and the size of the device.

[0018] It can be seen from the above technical solutions that, compared with the prior art, the present invention discloses a 5G communication optical signal transmitting device, which adopts a Michelson structure in each modulation arm, that is, light can pass through the modulation arm twice, so that the length of the modulation arm can be shortened by half, the size of the device can be reduced, and the integration degree can be increased; and a specially designed plasma doping structure is adopted inside the optical waveguide, so it has certain advantages in modulation efficiency and modulation energy consumption. Therefore, it can meet the size, cost and energy consumption requirements faced by the deployment of a large number of optical signal transmitting devices in 5G mobile communications. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying creative work.

[0020] Figure 1 The accompanying drawing is a schematic diagram of the structural principle of an optical signal transmitting device for 5G communication provided by the present invention;

[0021] Figure 2 The accompanying drawing is a circuit schematic diagram of the control unit provided by the present invention;

[0022] exist Figure 1-Figure 2 middle:

[0023] 1-optical coupler, 2-upper modulation arm, 3-lower modulation arm, 4-control unit, 5-upper optical beam splitter, 6-lower optical beam splitter, 7-upper circular ring, 8-lower circular ring. DETAILED DESCRIPTION

[0024] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0025] Example 1

[0026] See attached Figure 1 As shown, Embodiment 1 of the present invention discloses a 5G communication optical signal transmitting device, including:

[0027] Optical coupler 1, optical coupler 1 is used to split the input continuous light and combine the output continuous light;

[0028] The optical coupler is a 1:1 DC coupler, and its structure is two close silicon-based optical waveguides, which is used to split or combine continuous light and enter the two optical waveguides respectively.

[0029] An upper modulation arm 2, the upper modulation arm 2 is connected to the optical coupler 1, and the upper modulation arm 2 is used to adjust the phase of the returned input light;

[0030] A lower modulation arm 3, the lower modulation arm 3 is connected to the optical coupler 1, and the lower modulation arm 3 is used to adjust the phase of the returned input light;

[0031] The upper modulation arm 2 and the lower modulation arm 3 may adopt a Michelson structure, which is an existing structure.

[0032] A control unit 4, the control unit 4 is electrically connected to the upper modulation arm 2 and the lower modulation arm 3, and the control unit 4 is used to apply a bias voltage to the upper modulation arm 2 and the lower modulation arm 3;

[0033] An upper optical beam splitter 5, which is connected to the upper modulation arm 2 and is used to split light;

[0034] The lower beam splitter 6 is connected to the lower modulation arm 3 and is used for splitting light.

[0035] The optical coupler 1 splits the input continuous light into two beams, the upper modulation arm 2 and the upper optical beam splitter 5 are both arranged on one of the optical paths, and the lower modulation arm 3 and the lower optical beam splitter 6 are both arranged on the other optical path.

[0036] Specifically, the front of the optical coupler 1 may also include a continuous light input port and an output port for importing / exporting external continuous light into the optical coupler 1. The entire import / export process can be achieved using structures such as grating coupling and end face coupling.

[0037] See attached Figure 2 As shown, the control unit 4 includes: a first diode, a second diode, a first capacitor, a first inductor, a second inductor, an electrical signal loading unit and a static bias voltage loading unit, the positive electrode of the first diode is connected to one end of the first capacitor and one end of the first inductor, the negative electrode of the first diode is connected to one end of the second inductor and the negative electrode of the second diode, the positive electrode of the second diode is grounded and connected to the other end of the first inductor, one end of the electrical signal loading unit and the negative electrode of the static bias voltage loading unit, the other end of the electrical signal loading unit is connected to the other end of the first inductor, and the positive electrode of the static bias voltage loading unit is connected to the other end of the second inductor.

[0038] In a specific embodiment, the upper modulation arm 2 and the lower modulation arm 3 contain a PN doping structure, which can be controlled by the control unit 4 to increase the phase of the light field in the waveguide and establish a relationship between the reverse bias voltage and the phase of the light field in the waveguide.

[0039] Specifically, the specific working principle of the control unit 4 is: assuming that the amplitude of the external electrical signal is V RF , this amplitude V RF Carrying the information to be transmitted, the static bias voltage is V B ; When the information of the loaded electrical signal is "1", the total reverse bias voltage obtained by the upper arm is V B -0.5*V RF , the total reverse bias voltage obtained by the lower arm is V B +0.5*V RF ; When the information of the loaded electrical signal is "0", the total reverse bias voltage obtained by the upper arm is V B +0.5*V RF , the total reverse bias voltage obtained by the lower arm is V B -0.5*V RF ; and because reverse bias is required, V B -0.5*|V RF |>0, that is, |V RF |<2*V B .

[0040] In a specific embodiment, it further comprises: an upper circular ring 7, which is connected to the upper beam splitter 5, that is, the upper circular ring 7 is arranged in the light input direction.

[0041] In a specific embodiment, it further comprises: a lower circular ring 8, which is connected to the lower beam splitter 6, that is, the lower circular ring 8 is arranged in the light output direction.

[0042] The specific working principle of this device is as follows: continuous light is input through the optical input direction, and the continuous light is first divided into two beams of light through the optical coupler 1 and distributed into the upper and lower modulation arms. The Michelson interference structure can be used in the modulation arm, and the light can be reflected back to the modulation arm through the upper and lower rings at the tail. In this way, when the same optical phase change is obtained, the required modulation arm length will be half of that of the traditional optical modulation arm. The plasma dispersion effect is used in the modulation arm to regulate the refractive index of the silicon-based optical waveguide, thereby changing the phase of the light. The light from the upper and lower modulation arms is reflected back to the optical coupler 1 and interferes. According to the different phase differences of the two lights, there will be different interference effects, and the interfered light is coupled out from the optical output port.

[0043] Example 2

[0044] The specific manufacturing process of the optical signal transmitting device for 5G communication involved in any one of the embodiments 1 is as follows: based on the microelectronic process platform (CMOS process), the material used for processing is the SOI wafer commonly used in the CMSO process. The thickness of the top silicon in the wafer generally selected is 220nm, and the thickness of the buried oxide layer is 3μm.

[0045] First, the 220nm thick top layer of single crystal silicon is anisotropically dry-etched to prepare the passive components such as optical waveguides, optical couplers, and optical beam splitters required in the entire optical transmission system. In order to reduce the loss of passive components, the etched silicon waveguide is hydrogen annealed after etching.

[0046] Secondly, the preparation process of the upper modulation arm and the lower modulation arm is as follows: the ridge waveguide is prepared by a 160nm etching process, followed by an ion injection process for electrons and holes. A thermally grown oxide layer is required as a protective layer for the ridge waveguide to prevent unnecessary doping in non-designed areas; the doping area is determined by etching doping holes, and ions will be injected into the ridge silicon waveguide from the doping holes to dope at specific locations; among them, the N and P doping with lower concentrations are located in the center of the ridge silicon waveguide to form a PN junction, and the N+ and P+ doping with higher concentrations are located on both sides of the ridge silicon waveguide to form an electrical ohmic contact and connect to external electrical drive devices. Among them, the N and P doping concentrations with lower concentrations are 1×10 18 / cm 3 , 5×10 17 / cm 3 The higher concentration of N+ and P+ doping concentration is 1×10 20 / cm 3

[0047] Finally, according to the attached Figure 1 As shown, according to the propagation requirements and paths of the optical path, an overall optical signal transmitting device for 5G communication is formed.

[0048] The entire preparation process of the present invention is based on the CMOS process platform, so it has inherent advantages in size and cost. The present invention has two upper and lower modulation arms. When the optical phase difference between the two modulation arms is 0, the two arms produce optical coherence and constructive phase, and the intensity of the output light is the largest, which is equivalent to the "1" code; when the optical phase difference between the two modulation arms is π, the two arms produce optical coherence and destructive phase, and the intensity of the output light is the smallest, which is equivalent to the "0" code; the optical phase difference between the two modulation arms can be controlled by voltage, and a Michelson structure is used in each modulation arm, that is, light can pass through the modulation arm twice, so that the length of the upper modulation arm and the lower modulation arm can be shortened by half, reducing the size of the device and increasing the integration; and the upper modulation arm and the lower modulation arm adopt a specially designed plasma doping structure inside, so it has certain advantages in modulation efficiency and modulation energy consumption. Therefore, it can meet the requirements of size, cost, and energy consumption faced when deploying a large number of optical signal transmitting devices in 5G mobile communications.

[0049] In this specification, each embodiment is described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the embodiments can be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part.

[0050] The above description of the disclosed embodiments enables one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A 5G communication optical signal transmitting device, characterized in that: include: An optical coupler (1), the optical coupler (1) being used to split input continuous light and combine output continuous light; An upper modulation arm (2), the upper modulation arm (2) being connected to the optical coupler (1), and the upper modulation arm (2) being used to adjust the phase of the returned input light; A lower modulation arm (3), the lower modulation arm (3) being connected to the optical coupler (1), and the lower modulation arm (3) being used to adjust the phase of the returned input light; A control unit (4), the control unit (4) being electrically connected to the upper modulation arm (2) and the lower modulation arm (3), the control unit (4) being used to apply a bias voltage to the upper modulation arm (2) and the lower modulation arm (3); An upper light beam splitter (5), the upper light beam splitter (5) being connected to the upper modulation arm (2), and the upper light beam splitter (5) being used to split light; A lower light beam splitter (6), the lower light beam splitter (6) being connected to the lower modulation arm (3), and the lower light beam splitter (6) being used to split light; The control unit (4) comprises: a first diode, a second diode, a first capacitor, a first inductor, a second inductor, an electrical signal loading unit and a static bias voltage loading unit, wherein the anode of the first diode is connected to one end of the first capacitor and one end of the first inductor, the cathode of the first diode is connected to one end of the second inductor and the cathode of the second diode, the anode of the second diode is grounded and connected to the other end of the first inductor, one end of the electrical signal loading unit and the cathode of the static bias voltage loading unit, the other end of the electrical signal loading unit is connected to the other end of the first inductor, and the anode of the static bias voltage loading unit is connected to the other end of the second inductor; The optical coupler (1) splits the input continuous light into two beams of light, the upper modulation arm (2) and the upper optical beam splitter (5) are both arranged on one of the optical paths, and the lower modulation arm (3) and the lower optical beam splitter (6) are both arranged on the other optical path.

2. A 5G communication optical signal transmitting device according to claim 1, characterized in that: Also includes: An upper circular ring (7), wherein the upper circular ring (7) is connected to the upper light beam splitter (5).

3. The optical signal transmitting device for 5G communication according to claim 1, characterized in that: Also includes: A lower circular ring (8), the lower circular ring (8) being connected to the lower light beam splitter (6).

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