Well drilling anti-interference communication system based on VCSEL, VCSEL and manufacturing method thereof

Abstract

The invention provides a well drilling anti-interference communication system based on a VCSEL (Vertical Cavity Surface Emitting Laser), the VCSEL and a manufacturing method thereof, and the manufacturing method comprises the following steps: calculating the light field intensity distribution of a high-order transverse mode through an intrinsic mode expansion method and a Laguerre-Gaussian model based on the epitaxial structure parameters of a laser; determining a target area which begins to perform downward annular etching on the surface of the p-DBR layer, wherein the target area coincides with a light field intensity peak area of the high-order transverse mode; performing annular etching in the target area to form an annular groove, and etching at least seven pairs of p-DBR layers inwards in the groove; the communication system comprises a signal transmitting end arranged on the derrick side, and the signal transmitting end is provided with the vertical cavity surface emitting laser; the p-DBR region of the vertical cavity surface emitting laser is provided with an annular etching structure; the graded-index fluorinated plastic optical fiber is used as a transmission medium and is connected with the derrick side and the logging room side; and the optical signal receiving end is arranged at the logging room side and is used for receiving and converting the optical signal into an electric signal.

Description

Technical Field

[0001] This invention relates to the field of communication in oil and gas exploration and development, and more specifically, to a drilling anti-interference communication system based on VCSEL, the VCSEL, and its manufacturing method. Background Technology

[0002] Vertical-cavity surface-emitting lasers (VCSELs) have attracted widespread attention in short-range optical communication due to their advantages such as low threshold current, circular output spot, ease of two-dimensional integration, and relatively low manufacturing cost. However, when communicating between the derrick and logging room in oil drilling sites, traditional VCSEL designs and general communication system solutions face many challenges and struggle to meet the comprehensive requirements of high performance, high reliability, and low cost in this scenario.

[0003] First, regarding laser performance, conventional VCSELs typically operate in a multimode state, exhibiting higher-order lateral modes. These higher-order modes lead to beam quality degradation and introduce significant spectral broadening, further exacerbating material dispersion during optical signal transmission in optical fibers, severely limiting the bandwidth and transmission distance of communication systems. To address this issue, existing technologies have proposed several VCSEL structural improvement schemes. For example, prior art document 1 (patent application number: CN202410223666.7) discloses a VCSEL fabrication method that uses etching of a porous structure and selective etching to form an annular cavity filled with SiO2. This method primarily aims to improve device performance by altering the optical field distribution or thermal management; however, its technical means are complex, and it does not explicitly address the key issue of suppressing higher-order lateral modes, particularly failing to differentially increase the loss of higher-order modes by precisely controlling the etching position, thereby failing to achieve stable single-mode or near-single-mode output.

[0004] Secondly, regarding the transmission medium, the environment at oil drilling sites is harsh, with strong vibrations, electromagnetic interference, and potential external pressure. While traditional glass-on-fiber (GOF) has low loss, its poor mechanical flexibility, weak bending resistance, and stringent connection precision requirements make it easily damaged in scenarios involving frequent field movement and wiring, and it is also costly. Although polycrystalline fiber (POF) possesses advantages such as flexibility, tensile strength, electromagnetic interference resistance, and low cost, making it an ideal alternative medium for this short-distance communication scenario, the multimode characteristics of ordinary VCSELs, when combined with POF, produce significant dispersion, preventing the full utilization of POF's bandwidth potential.

[0005] Furthermore, the GaN-based microdisk laser described in prior art document 2 (patent application number: CN202510000167.6) employs complex structures such as diamond nanocomposite current blocking layers, and is mainly designed for different material systems (GaN) and different application wavelengths. Its fabrication process is complex and costly, making it completely unsuitable for the oil drilling industry communication field, which requires standardization and mass production. Summary of the Invention

[0006] The purpose of this invention is to provide a drilling anti-interference communication system based on VCSEL, VCSEL and its manufacturing method. Through a simple and controllable process, it effectively suppresses higher-order modes to improve bandwidth, while achieving perfect coupling with a low-cost and durable POF, ultimately constructing a high-speed, anti-interference, mechanically robust and cost-controllable optical communication system.

[0007] The embodiments of the present invention are implemented as follows: A method for manufacturing a high-order mode-suppressed vertical-cavity surface-emitting laser includes the following steps: Based on the epitaxial structure parameters of the laser, the optical field intensity distribution of higher-order transverse modes is calculated using the intrinsic mode expansion method and the Laguerre-Gaussian model. Based on the light field intensity distribution, the target area for ring etching starting from the surface of the p-DBR layer is determined, and the target area coincides with the peak area of ​​the light field intensity of the higher-order transverse mode. A ring-shaped etching is performed in the target area to form a ring-shaped groove, with at least 7 pairs of p-DBR layers etched inward into the groove.

[0008] In a preferred embodiment of the present invention, when performing annular etching on the p-DBR layer, the etching position starts from near the positive electrode and is located in an annular region of 3.15-3.5 μm along the central axis of the laser, etching in the direction of the quantum well to form an annular groove; the etching depth penetrates at least 7 pairs of p-DBR layers, with a depth range of 1.0±0.1 μm; the width of the etching groove is 0.35±0.01 μm.

[0009] In a preferred embodiment of the present invention, after forming the annular groove, the method further includes the step of selectively oxidizing the sidewall of the annular groove to form a high-resistivity oxide layer.

[0010] In a preferred embodiment of the present invention, at least two oxide layers are formed outside the annular groove, and the width of the oxide layer is at least 0.45 μm.

[0011] In a preferred embodiment of the present invention, the tolerance of the etching depth is 0.1 μm, and the oxide layer is a high-resistivity oxide layer generated after oxidation of a high-component semiconductor.

[0012] This invention also provides a high-order mode-suppressed vertical-cavity surface-emitting laser, which is fabricated using any of the aforementioned manufacturing methods.

[0013] This invention also provides a drilling anti-interference communication system based on VCSEL, comprising: The signal transmitting end is located on the side of the derrick. The signal transmitting end has a vertical cavity surface-emitting laser with a wavelength of 850 nm. The p-DBR region of the vertical cavity surface-emitting laser is provided with a ring-shaped etch structure to actively suppress higher-order transverse modes and reduce material dispersion of optical signals in optical fiber transmission. Graded-index fluorinated plastic optical fiber, used as the transmission medium, connects the derrick side and the logging room side. The graded-index fluorinated plastic optical fiber is used to suppress mode dispersion. The optical signal receiver, located on the logging room side, is used to receive and convert optical signals into electrical signals.

[0014] In a preferred embodiment of the present invention, the above-mentioned vertical cavity surface-emitting laser includes a negative electrode, a substrate, 30-40 pairs of n-DBRs, a quantum well active region, 20-30 pairs of p-DBRs, and a positive electrode arranged coaxially from bottom to top; the quantum well active region, p-DBRs, and positive electrode have a first diameter, and the negative electrode, substrate, and n-DBRs have a second diameter larger than the first diameter; 8 to 10 pairs of DBR layers near the quantum well active region in the p-DBRs are provided with oxide holes to form current and optical field confinement.

[0015] In a preferred embodiment of the present invention, the above-mentioned annular etched structure is located on the surface of the p-DBR region of the VCSEL, which is an annular groove surrounding the central axis of the device, and the groove is etched downwards with at least 7 pairs of p-DBR layers.

[0016] In a preferred embodiment of the present invention, the distance between the inner wall of the annular groove and the central axis of the VCSEL is 3.15 μm ± 0.01 μm, the distance between the outer wall of the groove and the central axis is 3.50 ± 0.01 μm, the groove width is 0.35 ± 0.01 μm, and the etching depth tolerance corresponding to the groove depth is ± 0.1 μm.

[0017] In a preferred embodiment of the present invention, the sidewalls and / or bottom of the annular groove are selectively oxidized to form a high-resistivity oxide layer, and the transverse oxidation width of the oxide layer is 0.45 μm measured from the groove wall.

[0018] The beneficial effects of the embodiments of the present invention are: 1. A ring-shaped etching structure designed based on an optical field model directly and actively increases the mirror loss of higher-order transverse modes such as LP11 and LP21, which can increase the mirror loss by at least 60 cm⁻¹. -1This effectively filters out higher-order modes in the light source, which significantly improves the mode purity of the output beam and directly leads to a substantial reduction in material dispersion. This is a key prerequisite for achieving high-speed optical communication of 50 Gbaud and long-distance optical communication of more than 200 meters. 2. By optimizing the VCSEL laser through ring etching, higher-order transverse modes are suppressed, thereby reducing the material dispersion of the light source. At the same time, graded-index plastic optical fiber is used, and its refractive index distribution characteristics are utilized to effectively suppress mode dispersion. The two work together to provide low dispersion assurance for high-speed, long-distance communication and can effectively reduce the deployment cost on the well. Attached Figure Description

[0019] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0020] Figure 1 This is a schematic diagram of a drilling anti-interference communication system based on VCSEL according to an embodiment of the present invention; Figure 2 This is a schematic diagram of the structure of a traditional VCSEL laser; Figure 3 A schematic diagram of the longitudinal section along the light emission direction of a VCSEL that is equivalent to a SIF in a traditional VCSEL. Figure 4 This is a schematic diagram of the calculated transverse mode light field distribution and annular etching position of the optimized VCSEL according to an embodiment of the present invention; Figure 5 This is a schematic diagram of the p-DBR layer etching of the optimized VCSEL according to an embodiment of the present invention; Figure 6 A schematic diagram of the longitudinal section of a VCSEL after a ring etching and oxidation process according to an embodiment of the present invention; Icons: 110 - Signal transmitter; 120 - Gradient refractive index fluorinated plastic optical fiber; 130 - Optical signal receiver; 1 - Negative electrode layer; 2 - Substrate; 3 - n-DBR layer; 4 - Quantum well active region; 5 - p-DBR layer; 6 - Positive electrode layer; 7 - Oxide confinement layer; 8 - Ring region; 9 - Oxide layer. Detailed Implementation

[0021] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0022] Therefore, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the invention without inventive effort are within the scope of protection of the invention.

[0023] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0024] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided to make this application more comprehensive and complete, and to fully convey the concept of the exemplary embodiments to those skilled in the art.

[0025] Furthermore, the described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. Numerous specific details are provided in the following description to give a thorough understanding of embodiments of this application. However, those skilled in the art will recognize that the technical solutions of this application can be practiced without one or more of the specific details, or other methods, components, apparatuses, steps, etc., can be employed. In other instances, well-known methods, apparatuses, implementations, or operations are not shown or described in detail to avoid obscuring various aspects of this application.

[0026] The block diagrams shown in the accompanying drawings are merely functional entities and do not necessarily correspond to physically independent entities. That is, these functional entities can be implemented in software, in one or more hardware modules or integrated circuits, or in different network and / or processor devices and / or microcontroller devices.

[0027] The flowcharts shown in the accompanying drawings are merely illustrative and do not necessarily include all content and operations / steps, nor do they necessarily have to be performed in the described order. For example, some operations / steps can be broken down, while others can be combined or partially combined; therefore, the actual execution order may change depending on the specific circumstances.

[0028] This invention provides a short-range, high-bandwidth, and high-reliability optical communication system specifically designed for oil drilling sites, and improves several aspects of the system. The technical solution of this invention will be described in detail below with reference to an optimal implementation example.

[0029] First Embodiment This embodiment provides a drilling anti-interference communication system based on VCSEL. By establishing an optical communication link of about 100 meters in length and a communication rate of 50 Gbaud between the derrick and the logging room, it replaces traditional cables or fragile optical fiber cables that are easily affected by electromagnetic interference, reduces the overall cost, and achieves a communication rate of at least 50 Gbaud and repeaterless transmission of at least 200 meters in the harsh electromagnetic environment of the oil drilling site.

[0030] Please see Figure 1 The communication system mainly includes: A signal transmitter 110, located on the derrick side, features an 850nm vertical-cavity surface-emitting laser (VCSEL) optimized for high-order mode suppression and a direct modulation circuit. The p-DBR region of the VCSEL has a ring-shaped etched structure, similar to a continuous, complete shallow ring-shaped trench fabricated on a multilayer thin film. By precisely controlling the reflection and interference conditions of the light field, the loss of higher-order optical modes is differentially increased to actively suppress higher-order transverse modes and reduce material dispersion of the optical signal during fiber transmission. Direct modulation is used to control the laser drive current to control the light intensity, achieving electro-optical conversion. High-tolerance connectors suitable for plastic optical fibers are employed, avoiding cumbersome methods such as fusion splicing.

[0031] Graded-index fluorinated plastic optical fiber 120, serving as the transmission medium, connects the derrick side and the logging room side. It is overhead and partially armored in personnel activity areas. The graded-index fluorinated plastic optical fiber 120 is used to suppress modal dispersion. Fiber optic cabling in areas with high personnel and vehicle activity is armored or buried underground to reduce the risk of damage from external forces.

[0032] The optical signal receiver 130, located on the logging room side, is used to receive and convert optical signals into electrical signals. The photodetector can be a photodiode or an avalanche diode (APD) to achieve photoelectric conversion.

[0033] In this embodiment, graded-index fluorinated POF (GI-POF) is used as the transmission medium during wellhead communication. The graded refractive index distribution suppresses modal dispersion, and combined with the single-mode output of the VCSEL, it further reduces total dispersion. Its 850 nm band loss is as low as 0.08 dB / m, with a transmission distance of 200-300 meters. It also boasts advantages such as flexibility, tensile strength, and low cost, with a unit distance cost that is 60-70% of that of ordinary GOF. The distance between the derrick and the logging room is typically 50-150 meters. The new communication system, through the optimized combination of VCSEL and GI-POF, achieves a high-speed communication rate of 50 Gbaud within a fully achievable distance range, surpassing traditional cable and wireless communication.

[0034] Second Embodiment This embodiment improves the core components of the well-ground communication system by designing a novel ring-etched optimized VCSEL laser.

[0035] This embodiment uses a gallium arsenide (GaAs) VCSEL with an emission wavelength of 850 nm. Compared with the same type of distributed feedback laser (DFB), it has a lower cost and its circular beam is more conducive to coupling with optical fibers. Under the premise that the transmission distance and transmission attenuation can be received, its low manufacturing cost and maintenance cost make it more suitable for short-distance well communication scenarios than another popular laser in the drilling and completion field—fiber laser.

[0036] Please see Figure 2 It can be seen that it includes, from bottom to top, a negative electrode layer 1, a substrate 2, an n-DBR layer 3, a quantum well active region 4, a p-DBR layer 5, and a positive electrode layer 6. A typical VCSEL has 30-40 pairs of n-DBR layers 3 and 20-30 pairs of p-DBR layers 5. An oxide confinement layer 7 with oxide holes is disposed on the side of the p-DBR layer 5 near the quantum well active region 4.

[0037] Please see Figure 3The diagram shows a cross-section of a VCSEL equivalent to a SIF laser along the light emission direction. It can be seen that the light intensity output of its higher-order transverse modes LP11 and LP21 is basically consistent with that of the fundamental mode LP01, with roughly the same peak value. This indicates that traditionally used VCSEL lasers operate in a strong multimode state. Gain competition exists between multiple modes with similar intensities, and their relative intensities are easily disturbed by factors such as drive current and temperature changes, leading to unstable output power and optical field distribution, which is detrimental to stable signal transmission. Each higher-order transverse mode, such as LP11 and LP21, does not have a single wavelength spectrum; each carries multiple wavelength components offset from the center wavelength. When multiple high-intensity higher-order modes coexist, they inject a large amount of light components "offsetting the nominal wavelength" into the optical fiber. Since the optical fiber material has different propagation speeds / material dispersions for different wavelengths of light, this greatly exacerbates the overall material dispersion, limiting communication bandwidth and distance.

[0038] This state leads to poor output beam quality and unstable modes. Furthermore, the presence of multiple higher-order modes introduces severe mode dispersion and material dispersion, ultimately becoming the core bottleneck limiting the bandwidth and transmission distance of optical communication systems.

[0039] A common surface etching scheme typically involves depositing an additional layer of p-type semiconductor. Then, depending on the size of the oxide aperture and the shape (circular) of the high-brightness area of ​​the basic mode LP01, this semiconductor layer, which disrupts the constructive interference of the p-type distributed Bragg grating (p-DBR), is removed. This allows for differentiated treatment of the basic mode LP01 from LP11 and LP21, which are more prevalent in the final light source. This method effectively suppresses the refractive index of the higher-order modes, preventing their corresponding components that deviate from the operating wavelength from achieving effective interference. Finally, stimulated emission of the corresponding wavelength is excited in the active region.

[0040] The ring-etched optimized VCSEL laser used in this embodiment is based on the calculation of the optical field intensity distribution of higher-order transverse modes using the intrinsic mode expansion method and the Laguerre-Gaussian model to determine the etching location. This includes the following steps: VCSEL surface etching technology is a means of realizing single-mode communication with lasers. The light source generated by single-mode lasers is subject to less material dispersion in optical fibers. This is because the higher-order transverse modes with different wavelength components in the light source are suppressed, and the wavelength of the transmitted light is more singular.

[0041] Based on the oxide aperture used by the VCSEL to confine charge carriers and the optical field, the entire optical structure of this epitaxially grown and stacked semiconductor laser can be regarded as a short-segment step-index fiber (SIF), with the equivalent refractive indices n1 and n2 of the core and cladding being:

[0042]

[0043] Where, n material is the actual refractive index corresponding to the operating wavelength of each semiconductor layer, and E is the electric field strength, which is calculated by the Eigenmode Expansion (EME) method.

[0044] The equivalent refractive index of the SIF-like waveguide obtained by the above method can be used for Laguerre-Gaussian (LG) model calculations to determine the intensity of the near-field modes of light. It can be manifested as:

[0045]

[0046] in( r, φ ( ) is a cylindrical coordinate system. l The azimuth order is... p For radial order, w 0 represents the radius of the light spot. , a Where is the radius of the oxide pore. λ This refers to the operating wavelength of the laser.

[0047] In summary, the light intensity distribution function is: K is the scaling factor, and r is the radial coordinate, representing the distance from the central axis of the laser. w 0 represents the radius of the light spot. l The azimuth order is... p For radial order, To associate Laguerre polynomials, φ The azimuth angle is the angular position around the central axis of the laser emitted from the vertical cavity surface, cos 2 ( lφ Corresponding even mode, cos 2 ( lφ () corresponds to odd mode.

[0048] Please substitute the VCSEL laser parameters into the formula, see [link to formula]. Figure 4The optimized VCSEL lateral mode light field distribution and annular etching position are illustrated in the diagram, which visually demonstrates the calculation results. The red curve represents the normalized light field intensity distribution of the LP11 mode, and the yellow curve represents the distribution of the LP21 mode. It can be clearly seen that the absolute value of the abscissa corresponding to the peak position of the LP11 mode is 3.15 μm, while the absolute value of the abscissa of the intersection point of the LP11 and LP21 mode light field distributions is 3.5 μm. This indicates that the annular region between 3.15 μm and 3.5 μm from the laser's central axis is where the light field intensity of higher-order modes such as LP11 is concentrated, while the intensity of the fundamental mode LP01 is relatively weak. This step accurately plots the light intensity distribution of different modes such as LP01, LP11, and LP21 on the VCSEL surface using formulas, thereby etching the annular groove in the region that has the greatest interference to higher-order modes and the least impact on the fundamental mode, ensuring the precision and accuracy of the annular etching.

[0049] Therefore, this embodiment determines and selects to perform etching within the annular region 8 of 3.15 μm to 3.5 μm to most effectively introduce additional optical losses to higher-order modes while minimizing the impact on the fundamental mode. This determination combines theoretical models with visualized light field distribution, providing a clear and reliable basis for subsequent precise etching.

[0050] A ring-shaped etching was performed on p-DBR layer 5. See [link / reference]. Figure 5 The p-DBR half-section diagram is shown. Based on rotational symmetry along the central axis, annular etching is performed in the p-DBR region of the vertical cavity surface-emitting laser. The etching location starts near the positive electrode and is located within an annular region 8, 3.15-3.5 μm from the laser's central axis, etched towards the quantum well. The etching depth penetrates at least 7 pairs of p-DBR layers 5, with a depth range of 1.0 μm and an accuracy of 0.1 μm. The width of the etched annular groove is 0.35 μm, with an accuracy of 0.01 μm. The ratio of the entire annular groove width to the p-DBR layer radius is 0.35:10; the ratio of the inner groove wall to the radius is 3.15:10; and the ratio of the outer groove wall is 3.5:10.

[0051] To further enhance the advanced mold suppression effect, a functional layer can be formed outside the annular groove, and at least two oxide layers can be formed outside the etching groove. (See also...) Figure 5 The pink area in the image has an oxide layer width of 0.45 μm. The etching depth tolerance is 0.1 μm, and the oxide layer is a high-resistivity oxide layer generated after oxidation of a high-component semiconductor.

[0052] like Figure 6As shown, after the ring etching process, the light intensity output peaks of higher-order modes such as LP11 and LP21 in the VCSEL are significantly reduced, and both are lower than the light intensity output of the fundamental mode LP01. The significantly lower peaks of the LP11 and LP21 curves indicate that the oscillation intensity of these higher-order modes within the resonant cavity is greatly weakened after ring etching. The ring etching structure precisely acts on the intensity concentration region of these modes, introducing additional mirror loss, making it difficult for these modes to oscillate, and naturally reducing the light intensity output. This directly verifies that the ring etching function as a mode filter is successful.

[0053] Meanwhile, the intensity waveforms of higher-order modes are all below the LP01 curve, meaning that the fundamental mode accounts for a very high proportion in the laser output by the system, and the laser's "single-mode characteristic" or "few-mode characteristic" is excellent. This achieves the purification of the light source, which is a prerequisite and direct evidence for realizing the ultimate beneficial effect of low dispersion and high bandwidth communication.

[0054] Ring etching increases fundamental mode loss by 10 cm. -1 The loss of higher-order modes increases by nearly 60 cm⁻¹ -1 This study validated the effective suppression capability of the annular etched structure for higher-order transverse modes, as well as its technical effect in improving beam quality and ensuring the fundamental mode dominates the output. This effect provides crucial light source assurance for the subsequent realization of low-dispersion, high-bandwidth optical communication.

[0055] In summary, this embodiment calculates the etching positions of the p-DBR layer and etches at least 7 pairs of DBRs downward from the positive electrode direction to form an annular etching groove. This selectively increases the mirror loss of higher-order modes LP11 and LP21, thereby suppressing the excitation of higher-order transverse modes, reducing material dispersion of the optical signal, and thus improving communication bandwidth and signal quality. Compared with traditional DFB lasers or unoptimized VCSELs, this structure makes it easier for the circular beam to couple with graded-index fluorinated plastic optical fibers as the transmission medium, while keeping costs under control, thus reducing connection loss.

[0056] In the several embodiments provided in this application, it should be understood that the disclosed apparatus and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative. For instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. In addition, the mutual coupling or direct coupling or communication connection shown or discussed may be indirect coupling or communication connection through some interfaces, devices or units, or may be electrical, mechanical or other forms of connection.

[0057] The units described as separate components may or may not be physically separate. As will be appreciated by those skilled in the art, the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, computer software, or a combination of both. To clearly illustrate the interchangeability of hardware and software, the components and steps of the various examples have been generally described in terms of functionality in the foregoing description. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementations should not be considered beyond the scope of this invention.

[0058] The specific embodiments described above further illustrate the purpose, technical solution, and beneficial effects of the present invention. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A method for manufacturing a high-order mode-suppressed vertical-cavity surface-emitting laser, characterized in that, Includes the following steps: Based on the epitaxial structure parameters of the laser, the optical field intensity distribution of higher-order transverse modes is calculated using the intrinsic mode expansion method and the Laguerre-Gaussian model. Based on the light field intensity distribution, a target area for ring etching is determined starting from the surface of the p-DBR layer and proceeding downwards. This target area coincides with the peak region of the light field intensity of the higher-order transverse mode. A ring-shaped etching is performed within the target area to form a ring-shaped groove, wherein at least 7 pairs of p-DBR layers are etched inward into the groove.

2. The method for manufacturing a high-order mode-suppressed vertical-cavity surface-emitting laser according to claim 1, characterized in that, When performing ring etching on the p-DBR layer, the etching position starts from the first pair of p-DBR layers near the positive electrode, located in a ring region of 3.15-3.5 μm along the central axis of the laser, and is etched in the direction of the quantum well to form a ring groove; the etching depth penetrates at least 7 pairs of p-DBR layers, with a depth range of 1.0 ± 0.1 μm; the width of the etching groove is 0.35 ± 0.01 μm.

3. The method for manufacturing a high-order mode-suppressed vertical-cavity surface-emitting laser according to claim 1, characterized in that, After forming the annular groove, the method further includes the step of selectively oxidizing the sidewalls of the annular groove to form a high-resistivity oxide layer.

4. The method for manufacturing a high-order mode-suppressed vertical-cavity surface-emitting laser according to claim 1, characterized in that... At least two oxide layers are formed outside the annular groove, and the radius of the oxide layers is at least 0.45 μm.

5. The method for manufacturing a high-order mode-suppressed vertical-cavity surface-emitting laser according to claim 1, characterized in that, The etching depth tolerance is 0.1 μm, and the oxide layer is a high-resistivity oxide layer generated after oxidation of a high-component semiconductor.

6. A high-order mode-suppressed vertical-cavity surface-emitting laser, characterized in that, A high-order mode-suppressed vertical-cavity surface-emitting laser is prepared by the manufacturing method described in any one of claims 1 or 5.

7. A drilling anti-interference communication system based on VCSEL, characterized in that, include: A signal transmitting end is provided on the side of the derrick, the signal transmitting end having a vertical cavity surface-emitting laser as described in claim 6, the vertical cavity surface-emitting laser having a wavelength of 850 nm; the p-DBR region of the vertical cavity surface-emitting laser is provided with a ring-shaped etch structure for actively suppressing higher-order transverse modes and reducing material dispersion of optical signals in optical fiber transmission. The graded-index fluorinated plastic optical fiber, which serves as the transmission medium, connects the derrick side and the logging room side. The graded-index fluorinated plastic optical fiber is used to suppress mode dispersion. The optical signal receiver, located on the logging room side, is used to receive and convert optical signals into electrical signals.

8. The drilling anti-interference communication system based on VCSEL according to claim 7, characterized in that, The vertical cavity surface-emitting laser includes a negative electrode, a substrate, 30-40 pairs of n-DBRs, a quantum well active region, 20-30 pairs of p-DBRs, and a positive electrode arranged coaxially from bottom to top. The quantum well active region, p-DBRs, and positive electrode have a first diameter, and the negative electrode, substrate, and n-DBRs have a second diameter larger than the first diameter. Oxide holes are provided in 8 to 10 pairs of DBR layers near the quantum well active region in the p-DBRs to form current and optical field confinement.

9. The drilling anti-interference communication system based on VCSEL according to claim 7, characterized in that, The annular etched structure is located on the surface of the p-DBR region of the VCSEL. It is an annular groove surrounding the central axis of the device, and the groove is etched downwards with at least 7 pairs of p-DBR layers.

10. The drilling anti-interference communication system based on VCSEL according to claim 7, characterized in that, The distance between the inner wall of the annular groove and the central axis of the VCSEL is 3.15 ± 0.01 μm, the distance between the outer wall of the groove and the central axis is 3.50 ± 0.01 μm, the groove width is 0.35 ± 0.01 μm, and the etching depth tolerance corresponding to the groove depth is ±0.1 μm.

11. The drilling anti-interference communication system based on VCSEL according to claim 7, characterized in that, The sidewalls and / or bottom of the annular groove are selectively oxidized to form a high-resistivity oxide layer, and the transverse oxidation width of the oxide layer is 0.45 μm measured from the groove wall.

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