Semiconductor device and method for manufacturing the same

Abstract

The present disclosure provides a semiconductor device and a manufacturing method thereof. The manufacturing method of the semiconductor device can achieve a protrusion electrode with a stable shape. The manufacturing method of the semiconductor device includes: a resin forming step of covering the surface of a semiconductor element including a plurality of electrode pads with a cured resin; a protrusion forming step of forming a protrusion portion of the cured resin on the electrode pad and curing the protrusion portion; a resin supply step of covering the protrusion portion with a plating-resistant resin; a resin exposure step of exposing a part of the protrusion portion on the surface of the plating-resistant resin by removing a part of the plating-resistant resin; a dissolution step of forming a cavity portion in the plating-resistant resin by removing the cured resin corresponding to the protrusion portion; a plating step of filling the cavity portion with a metal; and a resin removal step of removing the plating-resistant resin.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device and a method for manufacturing the same, and particularly to a method for manufacturing a semiconductor device using a soluble resin. Background Art

[0002] In recent years, miniaturization, high functionality, and multifunctionality of electronic components and devices have been continuously developed. In order to meet the required demands, high density of semiconductor elements, multi-pinning of electrode terminals, and narrow pitch have been achieved.

[0003] As one of the methods for mounting a multi-pinned and narrow-pitched semiconductor element on a substrate, flip chip mounting is generally known. In this flip chip mounting, a protruding electrode formed on an electrode pad of a semiconductor element is joined to a connection terminal of a substrate, for example, by applying heat, pressure, ultrasonic waves, etc., thereby achieving electrical connection.

[0004] As the above-mentioned protruding electrode, for example, solder bumps formed by wire bonding method, electrolytic / non-electrolytic plating, or transfer method are known. However, in the wire bonding method, there is a limit to narrow pitch. In addition, in electrolytic / non-electrolytic plating and transfer method, bridging defects are likely to occur due to narrow pitch. Bridging defect refers to a phenomenon in which adjacent solder bumps melted due to the pressing process and heating process during mounting are connected to each other.

[0005] As an improvement strategy for these problems of narrow pitch, for example, Patent Document 1 discloses a method in which an opening (which may also be referred to as a cavity) having an inverted conical cross-sectional shape is formed in a photoresist by photolithography, and a plating process is performed on the opening to form a metal bump.

[0006] Here, use Figures 5A to 5C to briefly describe the manufacturing method of the semiconductor device of Patent Document 1. Figures 5A to 5C is a schematic diagram for explaining the manufacturing method of the semiconductor device described in Patent Document 1. Figures 5A to 5C Schematically shows a cross-section of a semiconductor device.

[0007] First, as Figure 5A shown, an insulating film 12, an aluminum pad 13, and a protective film 14 are formed on a silicone substrate 11. After that, for example, Ti (titanium), Pt (platinum), W (tungsten), Pd (palladium), etc. are evaporated to form a barrier metal 15 composed of 2 to 3 layers.

[0008] Next, a negative photoresist 17 is coated on the barrier metal 15. The film thickness of the photoresist 17 is, for example, 15 to 20 μm. Then, during pattern formation, the exposure time is made longer than usual (in other words, overexposure), as Figure 5BAs shown, an opening having an inverted conical cross-sectional shape is formed in the photoresist 17. Next, using the photoresist 17 as a mask, electrolytic plating of Au (gold) is performed on the opening using an electrolytic plating solution. Thus, as Figure 5C shown, a bump 16 having a positive conical cross-sectional shape is formed.

[0009] Prior Art Documents

[0010] Patent Documents

[0011] Patent Document 1: Japanese Patent Laid-Open No. 4-217324 Summary of the Invention

[0012] Problems to be Solved by the Invention

[0013] When forming a protruding electrode on a large-diameter wafer using the method of Patent Document 1 described above, in-plane uniformity in the film thickness forming process, exposure process, and development process of the photoresist 17 is important.

[0014] However, especially in the development process, it is difficult to ensure not only in-plane uniformity but also reproducibility, and how to stably form the shape of the protruding electrode has become a problem.

[0015] A problem of one aspect of the present disclosure is to provide a semiconductor device capable of realizing a protruding electrode having a homogeneous and stable shape and a method for manufacturing the same.

[0016] Means for Solving the Problems

[0017] The method for manufacturing a semiconductor device according to one aspect of the present disclosure includes: a resin forming step of covering the surface of a semiconductor element including a plurality of electrode pads with a curable resin; a protrusion forming step of forming a protrusion of the curable resin on the electrode pads and curing the protrusion; a resin supply step of covering the protrusion with a plating-resistant resin; a resin exposure step of exposing a part of the protrusion on the surface of the plating-resistant resin by removing a part of the plating-resistant resin; a dissolution step of removing the curable resin corresponding to the protrusion to form a cavity in the plating-resistant resin; a plating step of filling the cavity with a metal; and a resin removal step of removing the plating-resistant resin.

[0018] In addition, a semiconductor device is used, the semiconductor device including: a semiconductor element; a plurality of electrode pads disposed on the entire surface of one side of the semiconductor element; a conductive shielding layer formed on the entire surface of the side on which the electrode pads are disposed; an ultraviolet resin formed only between the plurality of electrode pads and on the shielding layer; and bumps formed on the plurality of electrode pads and on the shielding layer.

[0019] Advantages of the Invention

[0020] According to the present disclosure, it is possible to achieve a protrusion electrode having a homogeneous and stable shape. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1A FIG. is a schematic diagram for explaining the resin forming process according to Embodiment 1 of the present disclosure.

[0022] Figure 1B FIG. is a schematic diagram for explaining the protrusion forming process according to Embodiment 1 of the present disclosure.

[0023] Figure 1C FIG. is a schematic diagram for explaining the protrusion forming process according to Embodiment 1 of the present disclosure.

[0024] Figure 1D FIG. is a schematic diagram for explaining the protrusion forming process according to Embodiment 1 of the present disclosure.

[0025] Figure 1E FIG. is a schematic diagram for explaining the resin supply process according to Embodiment 1 of the present disclosure.

[0026] Figure 1F FIG. is a schematic diagram for explaining the resin exposure process according to Embodiment 1 of the present disclosure.

[0027] Figure 1G FIG. is a schematic diagram for explaining the dissolution process according to Embodiment 1 of the present disclosure.

[0028] Figure 1H FIG. is a schematic diagram for explaining the plating process according to Embodiment 1 of the present disclosure.

[0029] Figure 1I FIG. is a schematic diagram for explaining the resin removal process according to Embodiment 1 of the present disclosure.

[0030] Figure 2 FIG. is a schematic diagram for explaining the residual film portion removal process according to Embodiment 2 of the present disclosure.

[0031] Figure 3 FIG. is a schematic diagram for explaining the residual film portion removal process according to Embodiment 2 of the present disclosure.

[0032] Figure 4A FIG. is a schematic diagram showing an example of the shape of the protrusion electrode according to Embodiment 4 of the present disclosure.

[0033] Figure 4B FIG. is a schematic diagram showing an example of the shape of the protrusion electrode according to Embodiment 4 of the present disclosure.

[0034] Figure 4C It is a schematic diagram showing an example of the shape of the protruding electrode according to Embodiment 4 of the present disclosure.

[0035] Figure 4D It is a schematic diagram showing an example of the shape of the protruding electrode according to Embodiment 4 of the present disclosure.

[0036] Figure 5A It is a schematic diagram for explaining the manufacturing method of the semiconductor device of Patent Document 1.

[0037] Figure 5B It is a schematic diagram for explaining the manufacturing method of the semiconductor device of Patent Document 1.

[0038] Figure 5C It is a schematic diagram for explaining the manufacturing method of the semiconductor device of Patent Document 1.

[0039] Symbol Explanation

[0040] 1 Semiconductor element

[0041] 2 Electrode pad

[0042] 3 Seed layer

[0043] 4 Soluble ultraviolet curable resin

[0044] 4a Protrusion

[0045] 4b Remaining film portion

[0046] 5 Imprint mold

[0047] 5a Recess

[0048] 6 Plating-resistant resin

[0049] 6a Void portion

[0050] 7, 7a, 7b, 7c, 7d Protruding electrode

[0051] 11 Silicone substrate

[0052] 12 Insulating film

[0053] 13 Aluminum pad

[0054] 14 Protective film

[0055] 15 Barrier metal

[0056] 16 Bump

[0057] 17 Photoresist Detailed Embodiment

[0058] Hereinafter, each embodiment of the present disclosure will be described with reference to the accompanying drawings. In addition, in each figure, the same reference numerals are assigned to common structural elements, and their descriptions are appropriately omitted.

[0059] (Embodiment 1)

[0060] In the manufacturing method of the semiconductor device according to Embodiment 1 of the present disclosure, a resin forming step, a protrusion forming step, a resin supply step, a resin exposure step, a dissolution step, a plating step, and a resin removal step are performed in sequence.

[0061] Figures 1A to 1I It is a diagram for explaining the manufacturing method of the semiconductor device according to the present embodiment. Figures 1A to 1I Schematically shows a cross section of the semiconductor device.

[0062] <Resin forming step>

[0063] First, using Figure 1A , the resin forming step, which is the first step, will be described.

[0064] As Figure 1A shows, a plurality of electrode pads 2 are formed on the surface of the semiconductor element 1.

[0065] In the resin forming step, first, as Figure 1A shows, a seed layer 3 is formed so as to cover the entire surface of the semiconductor element 1 including the electrode pads 2.

[0066] The seed layer 3 is used as a base for forming electroplating. As the material of the seed layer 3, a conductive metal film such as Ni (nickel), W (tungsten), Cr (chromium), Cu (copper), Co (cobalt), Ti (titanium), Pd (palladium), etc. is used. The thickness of the seed layer 3 (the length in the vertical direction in the figure) is, for example, 0.01 to 1 μm.

[0067] Next, as Figure 1A shows, the entire surface of the seed layer 3 is covered with a soluble ultraviolet curable resin 4.

[0068] At this time, the soluble ultraviolet curable resin 4 (an example of a curable resin) is set thin and uniform, for example, by spin coating, a coater, etc. As the soluble ultraviolet curable resin 4, for example, an acrylic-based ultraviolet curable resin can be cited. The thickness of the soluble ultraviolet curable resin 4 is, for example, about 1 to 20 μm, and is set according to the shape and height of the finally formed protrusion electrode 7 (refer to Figure 1I ). In addition, the material of the soluble ultraviolet curable resin 4 is, for example, an ultraviolet curable resin that can be dissolved in ethanol or a solvent other than ethanol.

[0069] In the present embodiment, the case where the soluble ultraviolet curable resin 4 is cured by ultraviolet irradiation is used as an example for description, but a resin that is cured by a method other than ultraviolet irradiation may be used.

[0070] <Protrusion Forming Step>

[0071] Next, use Figures 1B to 1D , the protrusion forming process performed after the resin forming process is explained.

[0072] like Figure 1B As shown, the stamping mold 5 (an example of a transfer mold) is provided with recessed portions 5a so as to correspond to the positions of the electrode pads 2. The recessed portions 5a are, for example, conical or pyramidal.

[0073] In the protrusion forming process, first, Figure 1B As shown in FIG. 1 , each recess 5 a and each electrode pad 2 are aligned.

[0074] Next, if Figure 1C As shown, the stamper 5 is pressed (in other words, pressurized) to the soluble ultraviolet curable resin 4 .

[0075] Next, in Figure 1C In the state shown, ultraviolet rays are irradiated onto the surface of the soluble ultraviolet curable resin 4, so that the soluble ultraviolet curable resin 4 is cured. Figure 1C The arrow A indicates the irradiation direction of ultraviolet rays.

[0076] After the ultraviolet rays are irradiated, the stamp mold 5 is released from the semiconductor element 1 .

[0077] After demoulding of the stamping die 5, Figure 1D As shown in the figure, a convex soluble ultraviolet curing resin 4, that is, a protrusion 4a of the soluble ultraviolet curing resin 4 (hereinafter, simply referred to as "protrusion 4a") is formed. The shape of the protrusion 4a is the same as the shape of the concave portion 5a of the stamping mold 5. In addition, a residual film portion 4b of the soluble ultraviolet curing resin 4 (hereinafter, simply referred to as "residual film portion 4b") is formed in the portion other than the protrusion 4a.

[0078] In addition, the soluble ultraviolet curable resin 4 may be heated before the stamp 5 is pressed against the soluble ultraviolet curable resin 4. Thus, the fluidity of the soluble ultraviolet curable resin 4 when the stamp 5 is pressed is improved, and a protrusion 4a of a more stable shape can be formed. Furthermore, the stamp 5 may be brought into contact with the soluble ultraviolet curable resin 4 in a vacuum. Thus, the inclusion of pores can be suppressed, thereby suppressing the generation of pattern defects.

[0079] In addition, the soluble ultraviolet curable resin 4 can also be heated before the stamper 5 is demolded from the semiconductor element 1. Thereby, it is possible to suppress the adhesion of the soluble ultraviolet curable resin 4 to the stamper 5 during demolding, and thus it is possible to improve the demoldability.

[0080] The temperature for heating the soluble ultraviolet curable resin 4 during pressing and demolding is preferably about 40 to 90 degrees.

[0081] In addition, as the material of the stamper 5, for example, acrylic resin, silicone resin, polydimethylsiloxane (PDMS), quartz, or glass can be used. In addition, since ultraviolet curing is required in the state where the soluble ultraviolet curable resin 4 is pressure-transferred using the stamper 5 (for example, Figure 1C the state shown), as the material of the stamper 5, a transparent material having a transmittance of 50% or more with respect to ultraviolet rays is preferred.

[0082] In addition, the surface of the stamper 5 can be subjected to a demolding treatment in advance. Thereby, it is possible to suppress the adhesion of the soluble ultraviolet curable resin 4 to the stamper 5 during demolding. As the material for the demolding treatment, for example, resins such as silicone and fluorine are preferred.

[0083] <Resin supply process>

[0084] Next, Figure 1E is used to describe the resin supply process that follows the protrusion formation process.

[0085] In the resin supply process, as Figure 1E shown, the protrusion portion 4a and the residual film portion 4b are covered with the plating-resistant resin 6. As the plating-resistant resin 6, for example, materials such as photoresist and resins having plating resistance can be cited.

[0086] At this time, the plating-resistant resin 6 is set thin and uniform, for example, by spin coating, a coater, etc. The thickness of the plating-resistant resin 6 (the length in the vertical direction in the figure) is preferably about 1 to 20 μm, so that the removal process in the resin exposure process described later can be completed in a short time.

[0087] In addition, since the plating-resistant resin 6 will be immersed in the plating solution in the plating process described later, a photoresist or the like that is resistant to the plating solution is used, so that the shape can be maintained even in the plating process.

[0088] <Resin exposure process>

[0089] Next, Figure 1F is used to describe the resin exposure process that follows the resin supply process.

[0090] In the resin exposure process, asFigure 1F As shown, the plating-resistant resin 6 and the tops of the respective protruding portions 4a are removed by a mechanical method or a chemical method, so that the horizontal cross sections (hereinafter also referred to as exposed surfaces) of the respective protruding portions 4a are exposed on the surface of the plating-resistant resin 6.

[0091] Figure 1F The thickness of the protruding portion 4a shown (the length in the vertical direction in the figure) corresponds to the height of the protruding electrode 7 (see Figure 1I ) formed in the subsequent plating process.

[0092] In addition, when the protruding portion 4a is conical, its exposed surface is circular. In this case, it is preferable that the diameter of the circle is at least about 1 μm. In addition, when the protruding portion 4a is pyramidal, its exposed surface is polygonal. In this case, it is preferable that the diameter of the circumscribed circle of the polygon is at least about 1 μm. The reason for making the diameter or the diameter of the circumscribed circle at least about 1 μm is that it is necessary to allow a liquid such as a solvent to penetrate in the subsequent plating process.

[0093] In addition, as the above mechanical method, for example, a method of grinding and polishing the resin using a prescribed tool can be cited. In addition, as the above chemical method, for example, photoexcitation ashing in which a gas reacts with the resin by irradiation with ultraviolet rays or the like to peel off the resin, or plasma ashing in which a gas is made into plasma by high frequency or the like and the resin is peeled off by irradiation with the plasma can be cited, but it is not limited to these.

[0094] <Dissolution process>

[0095] Next, using Figure 1G , the dissolution process performed after the resin exposure process will be described.

[0096] In the dissolution process, the respective protruding portions 4a shown Figure 1F are dissolved and removed. As a result, as shown in Figure 1G , respective cavity portions 6a are formed in the plating-resistant resin 6.

[0097] For example, using a spinner, a paddle, etc., the exposed surfaces of the respective protruding portions 4a are immersed in a solvent. As a result, the solvent penetrates from the exposed surfaces of the respective protruding portions 4a to the inside, the respective protruding portions 4a are dissolved, and finally completely removed.

[0098] On the surface of the seed layer 3 on the electrode pad 2, there are provided the protruding portions 4a and the plating-resistant resin 6 (for example, see Figure 1F ), but the protruding portions 4a have the property of being dissolved by the solvent, and the plating-resistant resin 6 has the property of not being dissolved by the solvent. Therefore, in the dissolution process, as shown in Figure 1GAs shown, a cavity portion 6a having the same shape as the shape of the protrusion portion 4a (for example, a frustum of a cone shape or a frustum of a pyramid shape) is formed on the surface of the seed layer 3 on the electrode pad 2.

[0099] <Plating process>

[0100] Next, use Figure 1H to explain the plating process performed after the dissolution process.

[0101] In the plating process, by performing a plating treatment on the cavity portion 6a shown in Figure 1G , a protrusion electrode 7 is formed as shown in Figure 1H . The protrusion electrode 7 has the same shape as the cavity portion 6a.

[0102] As the plating treatment, for example, an electrolytic plating method can be used. Specifically, in a state where the electrode provided in the electrolytic plating bath and the seed layer 3 are connected to the power supply, each cavity portion 6a is immersed in the electrolytic plating bath and energized. Thereby, the plating solution is filled in each cavity portion 6a.

[0103] As the plating solution, for example, a bottom-up type filling plating solution composed of Cu (copper), Au (gold), etc. is preferably used. By using such a plating solution, it is easy to inject the plating solution into each cavity portion 6a even when each cavity portion 6a is minute or has a complex shape.

[0104] <Resin removal process>

[0105] Next, use Figure 1I to explain the resin removal process performed after the plating process.

[0106] In the resin removal process, the plating-resistant resin 6 shown in Figure 1H is removed. Thereby, as shown in Figure 1I , a state where each protrusion electrode 7 is exposed is obtained.

[0107] As a method for removing the plating-resistant resin 6, for example, a method of immersing the plating-resistant resin 6 in a stripping solution and peeling it from the semiconductor element 1, a method of removing the plating-resistant resin 6 by dry etching while protecting each protrusion electrode 7 with a mask, etc. can be cited.

[0108] <Effect>

[0109] As described above, according to the manufacturing method of the semiconductor device of the present embodiment, the protrusion electrode 7 is formed based on the shape of the concave portion 5a of the imprint mold 5. Therefore, for the protrusion electrode 7, it is possible to easily achieve the stabilization and homogenization of the area and shape of any horizontal cross-section in the protrusion electrode 7, which is difficult in lithography for a large-diameter wafer.

[0110] (Embodiment 2)

[0111] Embodiment 2 of the present disclosure will be described. Matters not described are the same as those in Embodiment 1.

[0112] After the above-mentioned protrusion forming process is completed, as Figure 1D shown, outside each protrusion portion 4a, residual film portions 4b are formed on both sides of each electrode pad 2. The residual film portions 4b also remain as Figure 1I shown after the above-mentioned resin removing process.

[0113] In terms of the function of the semiconductor device, there is no problem even if the residual film portions 4b remain. However, for example, when the semiconductor device is encapsulated, the adhesion to the resin such as underfill deteriorates, resulting in a problem of reduced reliability. In addition, for example, when the semiconductor device has a hollow structure, there is a problem of generating droplets due to high-temperature heat treatment and dew condensation tests.

[0114] To avoid such problems, in the present embodiment, after the above-mentioned protrusion forming process, a residual film portion removing process for removing the residual film portions 4b is performed.

[0115] In the residual film portion removing process, the residual film portions 4b as Figure 1D shown are removed by a method such as dry etching.

[0116] Thereby, as Figure 2 shown, only the protrusion portions 4a corresponding to the positions of the electrode pads 2 remain on the seed layer 3 and the next process is carried out. Therefore, after the resin removing process as the final process, as Figure 3 shown, only the protrusion electrodes 7 are formed on the seed layer 3. Therefore, the above problems can be solved.

[0117] (Embodiment 3)

[0118] Embodiment 3 of the present disclosure will be described. Matters not described are the same as those in Embodiments 1 and 2.

[0119] In Embodiment 2, the case where the residual film portion removing process is performed after the protrusion forming process is taken as an example for description, but the residual film portion removing process may also be performed after the resin removing process.

[0120] For example, the residual film portions 4b as Figure 1I shown are removed by a method such as dry etching. At this time, in order to prevent the protrusion electrodes 7 from being etched together with the residual film portions 4b, the upper part of the protrusion electrodes 7 may be shielded before etching.

[0121] Thereby, as Figure 3As shown, only the protruding electrode 7 is formed on the seed layer 3. Therefore, the problems described in the above-described Embodiment 2 can be similarly eliminated.

[0122] (Embodiment 4)

[0123] Embodiment 4 of the present disclosure will be described. Matters not described are the same as those in Embodiments 1 to 3.

[0124] In Embodiment 1, the case where the frustum-shaped or pyramid frustum-shaped protruding electrode 7 (refer to Figure 1B ) is formed by using the imprint mold 5 having the conical or pyramidal concave portion 5a (refer to Figure 1I ) has been described as an example, but the shape of the protruding electrode 7 is not limited thereto. In Figures 4A to 4D , various examples of the shape of the protruding electrode 7 are shown.

[0125] For example, Figure 4A the protruding electrode 7a shown is a stepped two-stage structure. The upper and lower stages of the protruding electrode 7a are each cylindrical or prismatic. In order to form the protruding electrode 7a, in the protrusion forming process, an imprint mold 5 having a concave portion having the same shape or substantially the same shape as the protruding electrode 7a is used.

[0126] For example, Figure 4B the protruding electrode 7b shown is a two-stage structure with different shapes in each layer. The upper stage of the protruding electrode 7b is frustum-shaped or pyramid frustum-shaped, and the lower stage of the protruding electrode 7b is cylindrical or prismatic. In order to form the protruding electrode 7b, in the protrusion forming process, an imprint mold 5 having a concave portion having the same shape or substantially the same shape as the protruding electrode 7b is used.

[0127] For example, Figure 4C the protruding electrode 7c shown is a stepped two-stage structure that is inclined between layers. The upper and lower stages of the protruding electrode 7c are each frustum-shaped or pyramid frustum-shaped. In order to form the protruding electrode 7c, in the protrusion forming process, an imprint mold 5 having a concave portion having the same shape or substantially the same shape as the protruding electrode 7c is used.

[0128] For example, Figure 4D the protruding electrode 7d shown is a three-stage structure. The upper, middle, and lower stages of the protruding electrode 7d are each frustum-shaped or pyramid frustum-shaped. In order to form the protruding electrode 7d, in the protrusion forming process, an imprint mold 5 having a concave portion having the same shape or substantially the same shape as the protruding electrode 7d is used.

[0129] Regarding the shapes of the protruding electrodes 7a to 7d described above, they can be appropriately selected in consideration of, for example, the shape of the electrode pad 2, stress absorption during semiconductor device mounting, etc.

[0130] As described above, in the present embodiment, by using the imprint mold 5 having a concave portion with the same shape or substantially the same shape as the shape of the protruding electrode to be formed, a protruding electrode having a desired shape can be stably formed. Therefore, in the present embodiment, compared with the case where the protruding electrode is formed by photolithography, it is advantageous in terms of the stability and limitation of the shape of the protruding electrode.

[0131] In addition, the present disclosure is not limited to the descriptions of the above embodiments, and various modifications can be made without departing from the gist thereof.

[0132] Furthermore, as a semiconductor device according to an embodiment, the semiconductor device includes: a semiconductor element; a plurality of electrode pads disposed on one surface of the semiconductor element; a conductive shielding layer formed on the entire surface on which the electrode pads are disposed; an ultraviolet resin formed only between the plurality of electrode pads and on the shielding layer; and bumps formed on the plurality of electrode pads and on the shielding layer.

[0133] Industrial Applicability

[0134] The manufacturing method of the semiconductor device of the present disclosure can stably form a plurality of protruding electrodes on a semiconductor element, and is useful in the manufacture of semiconductor devices that are being advanced in miniaturization, multi-pin configuration, narrow pitch, etc.

Claims

1. A method for manufacturing a semiconductor device, comprising: A resin forming step of covering the surface of a semiconductor element including a plurality of electrode pads with a cured resin; A protrusion forming step of forming a protrusion of the cured resin on the electrode pad and curing the protrusion; A resin supply step of covering the protrusion with a plating solution-resistant resin having resistance to a plating solution; A resin exposure step of exposing a part of the protrusion on the surface of the plating solution-resistant resin by removing a part of the plating solution-resistant resin; A dissolution step of forming a cavity in the plating solution-resistant resin by removing the cured resin corresponding to the protrusion; A plating step of filling the cavity with a metal; And A resin removal step of removing the plating solution-resistant resin.

2. The method for manufacturing a semiconductor device according to claim 1, wherein In the protrusion forming step, the protrusion is formed by pressing a transfer mold having a shape corresponding to the protrusion onto the cured resin.

3. The method for manufacturing a semiconductor device according to claim 1, wherein In the protrusion forming step, the protrusion is formed after heating the cured resin.

4. The method for manufacturing a semiconductor device according to claim 1, wherein It further includes: a residual film removing step of removing the residual film of the cured resin which is a part other than the protrusion.

5. The method for manufacturing a semiconductor device according to claim 4, wherein The residual film removing step is performed after the protrusion forming step.

6. The method for manufacturing a semiconductor device according to claim 4, wherein The residual film removing step is performed after the resin removing step.

7. The method for manufacturing a semiconductor device according to claim 2, wherein The transfer mold is an imprint mold.

8. The method for manufacturing a semiconductor device according to claim 1, wherein In the plating step, electrolytic plating is used.

9. The method for manufacturing a semiconductor device according to claim 1, wherein In the plating step, a filling plating solution is used.

10. The method for manufacturing a semiconductor device according to claim 1, wherein The cured resin is an ultraviolet curable resin.

11. A semiconductor device manufactured by the method for manufacturing a semiconductor device according to any one of claims 1 to 10, The semiconductor device includes: A semiconductor element; A plurality of electrode pads disposed on one surface of the semiconductor element; A conductive shielding layer formed on the entire surface of the one surface on which the electrode pads are disposed; An ultraviolet resin formed only between the plurality of electrode pads and on the shielding layer; And Bumps formed on the plurality of electrode pads and on the shielding layer.

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