Method for Detecting an Attempt to Compromise the Integrity of an Integrated Circuit and Integrated Circuit
CN111933584BActive Publication Date: 2025-07-08STMICROELECTRONICS (ROUSSET) SAS
Patent Information
- Application Number
- CN202010397652.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Priority Date
- 2019-05-13
- Filing Date
- 2020-05-12
- Publication Date
- 2025-07-08
- Estimated Expiration
- 2040-05-12
Smart Images
Figure CN111933584B_ABST
Abstract
A method and an integrated circuit for detecting an attempt to break the integrity of an integrated circuit are disclosed. The integrated circuit includes a semiconductor substrate. The semiconductor substrate has a front side and a back side. A first contact and a second contact spaced apart from each other are located on the front side. A conductive wafer is located on the back side. A detection circuit is configured to detect thinning of the substrate from the back side. The detection circuit includes a measurement circuit that measures a resistance value of the substrate between the at least one first contact, the at least one second contact, and the conductive wafer. Thinning is detected in response to the measured resistance value.
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Citation Information
Patent Citations
Method for detecting a breach of the integrity of a semiconductor substrate of an integrated circuit from its rear face, and corresponding device
US20190244915A1
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