Component carrier having surface-accessible components embedded in a laminate stack

Abstract

A component carrier (100) comprises: a laminated stack (102) comprising at least one electrically insulating layer structure (104) and / or at least one electrically conductive layer structure (106); and a component (108) having at least one electrically conductive connection structure (110) and embedded in the stack (102), wherein the at least one electrically conductive connection structure (110) of the component (108) is exposed relative to the stack (102) such that: an exposed free end (112) of the at least one electrically conductive connection structure (110) of the component (108) is flush with an outer main surface (114) of the stack (102) or extends beyond the outer main surface (114) of the stack (102).

Description

Technical Field

[0001] The invention relates to a method for producing a component carrier, a component carrier and a system. Background Art

[0002] With the increasing product functionality of component carriers equipped with one or more electronic components and the progressive miniaturization of these components and the increasing number of components to be mounted on component carriers, such as printed circuit boards, or embedded in component carriers, increasingly powerful array-like components or packages with a plurality of components having a plurality of contacts or connections, wherein the spacings between these contacts are increasingly smaller, are used. During operation, it is becoming an increasingly serious problem to remove the heat generated by these components and the component carrier itself. At the same time, the component carrier should be mechanically stable and electrically reliable in order to be able to operate even under adverse conditions.

[0003] In particular, efficient embedding of components in component carriers is a problem. Summary of the invention

[0004] There may be a need to efficiently embed a component in a component carrier.

[0005] According to an exemplary embodiment of the present invention, a component carrier is provided, wherein the component carrier comprises a laminated stack (i.e., a multilayer structure having a layer structure connected to each other by lamination rather than formed by molding) and a component (in particular, a semiconductor chip), wherein the laminated stack comprises at least one electrically insulating layer structure and / or at least one electrically conductive layer structure, the component having at least one electrically conductive connection structure and embedded in the stack, wherein the at least one electrically conductive connection structure of the component is exposed relative to the stack such that: an exposed free end of the at least one electrically conductive connection structure of the component is flush with (i.e., aligned with) an outer main surface of the stack (in particular, a flat main surface) or extends (or protrudes) beyond the outer main surface of the stack (in particular, a flat main surface).

[0006] According to another exemplary embodiment of the present invention, a system is provided, which comprises a component carrier having the above-mentioned features and at least one further component (the at least one further component may be embedded in the module or may alternatively be separately surface-mounted on the component carrier), the at least one further component being vertically stacked with the component carrier and electrically connected to the embedded component via the at least one electrically conductive connection structure.

[0007] According to another exemplary embodiment of the present invention, a method for manufacturing a component carrier is provided, wherein the method comprises: arranging a laminated stack or laminating the stack, the stack comprising at least one electrically conductive layer structure and / or at least one electrically insulating layer structure; embedding a component having at least one electrically conductive connection structure in the stack; and exposing a free end of the at least one electrically conductive connection structure relative to the stack such that: the exposed free end is flush with an outer main surface of the stack or extends beyond the outer main surface of the stack.

[0008] In the context of the present application, the term "component carrier" may particularly denote any support structure which is capable of accommodating one or more components on and / or in the support structure for providing mechanical support and / or electrical connection. In other words, the component carrier may be configured as a mechanical and / or electronic carrier for the components. In particular, the component carrier may be one of a printed circuit board, an organic insert and an IC (integrated circuit) substrate. The component carrier may also be a hybrid board combining different component carriers of the above-mentioned types of component carriers.

[0009] In the context of the present application, the term "laminated stack" may particularly denote a flat or planar structure or laminate formed by bonding together two or more thin sheets or layer structures arranged one above the other. Such layer structures may be arranged and / or formed parallel to one another and may be connected to one another by applying temperature and / or mechanical pressure.

[0010] In the context of the present application, the term "semiconductor chip" may particularly denote a component comprising a semiconductor material, in particular a semiconductor material as a main or basic material. The semiconductor material may for example be a type IV semiconductor such as silicon or germanium, or may be a type III-V semiconductor material such as gallium arsenide. In particular, the semiconductor chip may be a bare wafer or a molded wafer.

[0011] According to an exemplary embodiment of the invention, a component carrier is provided, wherein an electrically conductive connection structure belonging to an embedded component, in particular a semiconductor chip, extends as far as the outer main surface of the entire component carrier, for example in the following way: in line with the flat outer surface of the stack or even protruding outwardly beyond this flat outer surface of the stack. By exposing the free ends of such electrically conductive connection structures relative to the electronic periphery, the component can be embedded in the component carrier in a highly compact manner, while allowing a short path or even direct electrical contact of the embedded component in the vertical direction via one or more exposed electrically conductive connection structures. As a result, the length of the electrical path from the embedded component to the periphery of the component carrier can be very short, so that the losses of the transmitted electrical signals can also be kept very small. Connecting the electrically conductive connection structure to the component carrier before the electrically conductive connection structure is embedded in the stack and the electrically conductive connection structure and the stack constitute part of the component also makes the manufacturing process simple and clear. By embedding the components in a laminated stack, a compact vertical geometry can be achieved while allowing one or more further components to be surface mounted and / or laminated on a larger horizontal mounting area of ​​a laminated component carrier, such as a printed circuit board (PCB). Vertical coupling of such a laminated component carrier with further modules is also possible, thereby creating even complex systems in a simple manner.

[0012] According to an exemplary embodiment of the present invention, one or more connection structures (such as copper pillars) can be used for z-axis connection. Such connection structures can be applied to components (especially semiconductor chips) with high alignment accuracy to connect to components. Such connection architecture can also allow a high aspect ratio to be obtained. For example, the one or more embedded components may include a memory, a processor, a composite storage processor; a connection with a power module can be achieved; at least one antenna, etc. can be included. Copper plating in the z-axis direction of the component carrier can be achieved in an efficient manner through an exemplary embodiment of the present invention. Advantageously, the connection structure (especially a copper pillar or a pillar made of another material, wherein the pillar can be formed into different geometric shapes according to the needs of a specific application) can be lifted above the outer main surface of the stacked piece embedded with the component. In an embodiment, there is no need to rewire the embedded component, and only the direct connection of the embedded component can be sufficient.

[0013] Detailed Description of Exemplary Embodiments

[0014] In the following, further exemplary embodiments of a production method, a system and a component carrier will be explained.

[0015] In an embodiment, the at least one electrically conductive connection structure comprises or includes at least one column, in particular at least one copper column. Such a column can be a columnar electrically conductive structure, the ratio of the length to the diameter of the columnar electrically conductive structure is much larger than the disk (pad) of the component. Therefore, the column can extend from the outside of the stack to the embedded component to bridge the distance between the stack and the embedded component. Such a column can be connected to the component before the embedding process, thereby simplifying the manufacturing process.

[0016] In an embodiment, the at least one electrically conductive connection structure comprises or includes at least one disk, in particular at least one copper disk. Thus, the electrically conductive connection structure may also include a disk forming an external flat electrically conductive interface of the component, the disk being arranged at the component and / or spaced apart relative to the component (e.g. spaced apart relative to the component by a post). In other words, the electrically conductive connection structure may also be very short in the z-direction to ensure that the components are in substantially direct contact at the external main surface of the component carrier.

[0017] In an embodiment, the at least one electrically conductive connection structure comprises at least one disk and at least one post located on the at least one disk, or the at least one electrically conductive connection structure consists of at least one disk and at least one post located on the at least one disk. In other words, one or more posts of a component and one or more disks of a component can be stacked vertically to form an electrically conductive connection structure of the component. By configuring the electrically conductive connection structure as a combination of posts and disks, conventionally manufactured components, such as semiconductor chips, can be used in particular, and a vertical contact structure can be extended by attaching one or more posts on each of the one or more disks. However, the component body (e.g. semiconductor body) and the corresponding disk can also be separated by corresponding posts.

[0018] Still referring to the previously described embodiments, the at least one disk may include at least one disk spaced apart by the at least one post relative to the body of the component (e.g., the semiconductor body in the case of a semiconductor chip-type component). In other words, the at least one disk may be spatially separated from the body of the component, wherein the post is located between the at least one disk and the body of the component.

[0019] Additionally or alternatively, at least one disk may be formed directly on the body of the component (e.g., the semiconductor body in the case of a semiconductor chip-type component). The at least one disk mentioned later may space the body of the component relative to the at least one post. Such a disk may be a disk that serves as an electrical conductive terminal directly on the body of the component. For example, the disk may be directly connected to the body of the component on one side and directly connected to the post on the opposite side.

[0020] In yet another embodiment, there may also be a first plate and a second plate, wherein the first plate is located on one end of the column facing the body of the component and the second plate is located on the other end of the column opposite the body of the component. In this case, the first plate and the second plate may be spaced apart by the column.

[0021] In an embodiment, the at least one electrically conductive connection structure has an aspect ratio of at least 0.3, in particular at least 0.5, more in particular at least 1, preferably at least 2. In the context of the present application, the term "aspect ratio" of the electrically conductive connection structure may in particular denote the ratio between the vertical length of the electrically conductive connection structure (i.e. the length in a direction perpendicular to the main surface of the component body from which the electrically conductive connection structure extends) and the maximum diameter of the electrically conductive connection structure. For example, the aspect ratio may be the ratio between the height of a column and the diameter of the column. By means of the described relatively large aspect ratio, the component may be securely embedded in the stack while ensuring that a sufficiently long electrically conductive contact may be provided, which extends up to or even beyond the surface of the stack.

[0022] In an embodiment of the component carrier and the system, the exposed electrically conductive connection structure is configured to be directly electrically connected to the electronic peripheral part, in particular to another component, more particularly to another semiconductor chip. Accordingly, the method may include directly electrically connecting the exposed electrically conductive connection structure to the electronic peripheral part, in particular to another component, more particularly to another semiconductor chip. Therefore, such an embodiment allows another electronic component to be in direct contact with the exposed electrically conductive connection structure of the component. This makes the electrical path very short and the signal loss small. In particular, when another component surface-mounted on the component carrier is directly connected to the electrically conductive connection structure, a very short z-axis connection can be established. Moreover, the contact path from the component carrier to the vertical connection module is very short.

[0023] In an embodiment, the exposed electrically conductive connection structure is configured to enable connection to the electronic periphery without the need for a redistribution layer. Accordingly, the method may include connecting the exposed electrically conductive connection structure to the electronic periphery without the need for a redistribution layer. Very advantageously, a separate redistribution structure or layer between the embedded component and the electronic periphery of the component carrier may be omitted. Conventionally, such a redistribution layer provides an interface between the smaller dimensions of the semiconductor field corresponding to the dimensions of the disk of the chip-type component and the larger dimensions of the PCB (printed circuit board) field. By directly using the embedded and exposed electrically conductive connection structure belonging to the component to establish the electrical connection to the electronic periphery of the component carrier, the formation of an RDL (redistribution layer) may become dispensable and the electrically conductive contact paths may become very short.

[0024] In another embodiment, the exposed electrically conductive connection structure is configured to be connectable to the electronic periphery via a redistribution layer.The redistribution layer may be formed at least partially by the electrically conductive connection structure and optionally a soldering structure located on the electrically conductive connection structure.

[0025] In an embodiment, the embedded component is provided with a plurality of electrically conductive connection structures extending parallel to each other from the same main surface of the component body. Figure 1 ) allow even complex electrical interconnections to be established in a simple manner.

[0026] In an embodiment, at least one exposed free end of the at least one electrically conductive connection structure is provided with a soldering material or is covered with a soldering material. Thus, soldering material may be added to the exposed end of the at least one electrically conductive connection structure in order to simplify the soldering process of connecting the embedded component to the electronic periphery of the component carrier, for example to a surface mounted further component, by soldering. When the electrically conductive connection structure comprises a column, for example a copper column, the free end of the column may be covered with soldering material before or after the embedding process. For example, such a solder coating at the flange surface of the exposed column may have the same diameter as the column (for example, a relatively Fig.10 ) or may have a larger diameter than the column (e.g., Figure 7 details in ).

[0027] In an embodiment, at least one exposed free end of the at least one electrically conductive connection structure is provided with at least one disk, which is in particular covered with a solder material. For example, the free end of the column may be covered with a disk having a greater transverse dimension than the column, wherein the disk may in turn be covered with a solder material (e.g., a relatively Figure 7 ). In such an embodiment, even the exposed disk of the embedded component can be covered with a cover of welding material for simplifying the welding connection between the component carrier of the embedded component with the component carrier and further components or the like.

[0028] In an embodiment, the component carrier comprises at least one further component embedded in the stack, and the at least one further component is in particular electrically connected to the component. For example, the at least one further embedded component may be a passive component (such as a capacitor, an inductor or an ohmic resistor), whereas the aforementioned component may be an active component (such as a microprocessor).

[0029] In an embodiment, the method includes embedding a component in a cavity of a stack. The component can be inserted into the cavity in a face-up manner, that is, one or more electrically conductive connection structures are oriented upward and facing away from the bottom of the cavity. Such a cavity can be a blind hole that extends through only a portion of the thickness of the stack and limits the component accommodating volume at the sidewalls and the bottom. Forming a cavity (i.e., a blind hole) in a stack (e.g., in the central core of the stack) or in the peripheral portion of the stack makes it possible to easily embed the component by simply placing the component in the cavity. For example, the cavity can be formed by mechanical drilling, laser processing, etching, etc. In a preferred embodiment, the method includes forming a cavity in the following manner: a non-adhesive release structure is combined in the stack, and then the portion of the stack located above the release structure is removed to obtain a cavity. The portion can be spatially limited by a non-adhesive release structure and a circumferential cutting line, which can be formed, for example, by mechanical cutting or laser cutting. According to such a preferred embodiment, first a release layer made of a material having non-sticky properties for the surrounding component carrier material is embedded in the stack. Secondly, the portion of the stack located on the release layer can be removed by cutting the circumferential line extending from the outside of the stack to the release layer. This can be achieved, for example, by mechanical drilling or laser drilling. Due to the non-sticky properties of the release layer, the circumferentially separated portion of the stack located on the release structure or layer can then be simply taken out of the stack, and a cavity can be obtained. The component can then be simply placed in the cavity for embedding.

[0030] In another embodiment, the method includes embedding the component in a through hole extending through the stack. In such an embodiment, the component receiving volume can extend through the entire stack. In order to insert the component into the through hole, the bottom of the through hole can be temporarily closed by a temporary carrier such as an adhesive tape.

[0031] In another embodiment, the method includes pressing a component less than 50 μm of thickness between the relative flat layer structures of the stack. In such an embodiment, there is no component accommodating volume formed in the stack at all. In contrast, thin components are simply pressed between opposite flat electrical insulating layer structures, which are preferably at least partially uncured when pressed. Therefore, components can be simply laminated (rather than molded) between the flat layer structures. For example, the suitable material of this layer structure is an uncured resin, which can be triggered to start crosslinking when components are embedded between this layer structure in the presence of pressure and / or temperature. Therefore, the previously at least partially uncured layer structure can become fully cured, and components can be reliably connected to each other by lamination. When the thickness of the component is less than 50 μm, for example, when the component is a thin and bare semiconductor wafer, this is particularly advantageous, because it has been proven that it is possible for this thin semiconductor chip type component to be embedded between flat uncured layer structures without warping, etc.

[0032] In an embodiment, the method comprises inserting a component having an adhesive structure at least on a bottom surface into the stack, thereby connecting the component to the stack. In such an embodiment, the adhesive structure is already connected to the component itself before embedding, so that the insertion of the component into the stack and the application of mechanical pressure and / or heat triggers the formation of an adhesive connection between the component and the stack.

[0033] In an embodiment, the method includes inserting a component with an adhesive structure into the stack, thereby connecting the component to the stack. In such an embodiment, (e.g., liquid) adhesive can be distributed or brushed in the bottom region of the cavity-type component accommodating volume previously formed in the stack. Preferably, such an adhesive material can be configured so that during the period when the component is pressed on the adhesive or at least during the period when other layer structures are laminated to the top surface and / or bottom surface of the stack, the adhesive material is cured, wherein one or more components are inserted into the stack. Therefore, it is also possible that the stack itself can also be provided with an adhesive structure, such as at least partially uncured resin (e.g., prepreg), thereby pressing the component on this adhesive structure of the stack--this pressing is preferably accompanied by heat--the formation of the adhesive connection between the trigger component and the stack.

[0034] In an embodiment, the method comprises inserting parts into the stack, and subsequently arranging bonding structure to parts and stack, thereby parts are connected to the stack. In such an embodiment, bonding material can be added after parts are placed in a cavity or through hole. For example, this adhesive can be distributed in the lateral gap between parts and stacks, and can be cured then. In another alternative, at least one other at least partially uncured layer structure can be attached (preferably laminated) to the top main surface, so that the corresponding resin of the uncured layer structure can become flowable, and therefore can form an adhesive connection between parts and stacks.

[0035] In an embodiment, the adhesive comprises filler particles, the size of which is particularly in the range of 0.1 μm and 5 μm, more particularly in the range of 0.5 μm and 1 μm. With reference to any of the foregoing embodiments, the adhesive may comprise filler particles of the above-mentioned size so as to adjust the physical properties of the component carrier accordingly. For example, such filler particles may at least partially balance the mismatch between the thermal expansion coefficient of the material of the component (e.g., a semiconductor material such as silicon) and the thermal expansion coefficient of the material of the stack (copper and resin, optionally including reinforcing particles such as glass fibers). It is also possible that the filler particles are functionalized in another way, for example to increase the thermal conductivity of the component carrier. The filler particles may also be selected to improve the high frequency characteristics of the component carrier, for example the filler particles may be made of low-k material.

[0036] In an embodiment, the method comprises forming the stack by lamination. In the context of the present application, the term "lamination" may particularly denote that mechanical pressure and / or heat are used to make partially uncured material flowable, wherein such triggered cross-linking of the previously at least partially uncured material may re-cur the material and become permanently bonded.

[0037] In an embodiment, the method comprises connecting the component to the stack by means of an adhesive structure and subsequently removing a surface portion of the adhesive structure, in particular by means of a plasma treatment, thereby exposing at least one electrically conductive connection structure. According to such a preferred embodiment, the electrically conductive connection structure is first completely embedded in the stack and covered by the adhesive dielectric material without being exposed to the outer main surface of the component carrier. However, by subsequently performing a plasma process, the material of the adhesive can be selectively removed from the top surface of one or more electrically conductive connection structures and thus such surfaces can be reliably exposed. When the material removal process is adjusted so that the plasma process does not remove the material of the electrically conductive connection structure, the electrically conductive connection structure may protrude beyond the surrounding dielectric material, which may make the electrical connection subsequently formed between the protruding electrically conductive connection structure and the electronic environment more reliable and accurate.

[0038] In an embodiment, the method comprises covering at least one exposed free end of at least one electrically conductive connection structure with a soldering material before embedding. A soldering tip is provided on the column of the component before embedding (in particular, the soldering tip has substantially the same width as the column), so that a soldering material connection can be established between the embedded component and the electronic peripheral part substantially immediately after embedding. This is particularly advantageous in embodiments in which, before embedding the component into the stack, the component has a bonding structure on one main surface and an electrically conductive connection structure on the opposite main surface, with soldering material on the electrically conductive connection structure. Thus, the component can be prepared to facilitate bonding to the stack and to facilitate forming a soldered connection with the electronic peripheral part.

[0039] In an embodiment, the component carrier comprises a stack having at least one electrically insulating layer structure and at least one electrically conductive layer structure. For example, the component carrier can be a laminate of the mentioned electrically insulating layer structure and the electrically conductive layer structure, which laminate is formed in particular by applying mechanical pressure and / or thermal energy. The mentioned stack can provide a plate-like component carrier that can provide a large mounting surface for further components and is still very thin and compact.

[0040] In an embodiment, the component carrier is formed as a plate. This contributes to a compact design, wherein the component carrier nevertheless provides a large base for the components mounted on the component carrier. Furthermore, in particular bare wafers as an example of embedded electronic components can be conveniently embedded in thin plates such as printed circuit boards due to their small thickness. The plate-shaped component carrier also ensures short electrical connection paths and thus suppresses signal distortions during transport.

[0041] In an embodiment, the component carrier is configured as one of the following: a printed circuit board, a substrate (in particular an IC substrate) and an interposer.

[0042] In the context of the present application, the term "printed circuit board" (PCB) may particularly denote a plate-like component carrier formed by laminating a plurality of electrically conductive layer structures with a plurality of electrically insulating layer structures, for example by applying pressure and / or by supplying thermal energy. As a preferred material for PCB technology, the electrically conductive layer structure is made of copper, while the electrically insulating layer structure may include resin and / or glass fiber, so-called prepreg or FR4 material. By forming a through hole through the laminate, for example by laser drilling or mechanical drilling, and by filling the through hole with an electrically conductive material (particularly copper) to form a conduction portion as a through-hole connection portion, each electrically conductive layer structure may be connected to each other in a desired manner. In addition to one or more components that may be embedded in the printed circuit board, the printed circuit board is typically constructed to accommodate one or more components on one surface or two opposite surfaces of the plate-like printed circuit board. The one or more components may be connected to the corresponding main surface by welding. The dielectric portion of the PCB may include a resin with reinforcing fibers (such as glass fibers).

[0043] In the context of the present application, the term "substrate" may particularly refer to a small component carrier having approximately the same size as the components (especially electronic components) to be mounted on the substrate. More specifically, the substrate may be understood as a carrier for electrical connectors or electrical networks and a component carrier for connectors arranged laterally and / or vertically, which is comparable to a printed circuit board (PCB) but has a relatively high density. The lateral connectors are, for example, conductive channels, and the vertical connectors may be, for example, drill holes. These lateral and / or vertical connectors are arranged in the substrate and may be used to provide thermal, electrical and / or mechanical connections between accommodated components or unaccommodated components (such as bare wafers) - especially IC chips - and printed circuit boards or intermediate printed circuit boards. Therefore, the term "substrate" also includes "IC substrates". The dielectric portion of the substrate may include a resin having reinforcing particles (such as reinforcing spheres, especially glass spheres).

[0044] The substrate or insert may include or consist of at least one layer of glass, silicon (Si) or a photoimageable or dry-etchable organic material such as an epoxy-based laminate material (e.g., an epoxy-based laminate film) or a polymer composite such as polyimide, polybenzoxazole or benzocyclobutene.

[0045] In an embodiment, the at least one electrically insulating layer structure comprises at least one of the following: a resin (such as a reinforced resin or a non-reinforced resin, for example an epoxy resin or a bismaleimide-triazine resin), a cyanate ester, a polyphenylene derivative, a glass (particularly glass fiber, multilayer glass, a glass-like material), a prepreg material (such as FR-4 or FR-5), a polyimide, a polyamide, a liquid crystal polymer (LCP), an epoxy-based laminated film, polytetrafluoroethylene (Teflon), a ceramic, and a metal oxide. Reinforced materials such as meshes, fibers or spheres made of glass (multilayer glass) may also be used. Although prepregs, particularly FR4, are generally preferred for rigid PCBs, other materials may also be used, particularly epoxy-based laminated films or photoimageable dielectric materials. For high-frequency applications, high-frequency materials such as polytetrafluoroethylene, liquid crystal polymers and / or cyanate ester resins, low-temperature co-fired ceramics (LTCC) or other low DK materials, very low or ultra-low DK materials may be implemented as an electrically insulating layer structure in a component carrier.

[0046] In an embodiment, the electrically conductive layer structure may include at least one of the following: copper, aluminum, nickel, silver, gold, palladium and tungsten. Although copper is generally preferred, other materials or other types of coatings thereof are also possible, in particular the electrically conductive layer structure is coated with a superconducting material such as graphene.

[0047] In an embodiment, the semiconductor component may be a power semiconductor chip including transistors and / or diodes. However, the semiconductor component may also be a microprocessor. In yet another embodiment, the semiconductor component may be a radio frequency semiconductor chip configured to transmit and / or receive radio frequency signals. Thus, the semiconductor component may be configured to perform radio frequency applications, in particular radio frequency applications involving frequencies above 1 GHz.

[0048] At least one further component can be surface mounted on the component carrier and / or embedded in the component carrier and can in particular be selected from a non-conductive inlay, a conductive inlay (e.g. a metal inlay, preferably comprising copper or aluminum), a heat transfer unit (e.g. a heat pipe), a light-conducting element (e.g. an optical waveguide or optical conductor connection), an electronic component or a combination thereof. For example, the component can be an active electronic component, a passive electronic component, an electronic chip, a storage device (e.g. a DRAM or other data storage), a filter, an integrated circuit, a signal processing component, a power management component, an optoelectronic interface element, a light-emitting diode, an optocoupler, a voltage converter (e.g. a DC / DC converter or an AC / DC converter), a cryptographic component, a transmitter and / or a receiver, an electromechanical converter, a sensor, an actuator, a microelectromechanical system (MEMS), a microprocessor, a capacitor, a resistor, an inductor, a battery, a switch, a camera, an antenna, a logic chip and an energy harvesting unit. However, other components can also be embedded in the component carrier. For example, a magnetic element can be used as a component. Such a magnetic element can be a permanent magnetic element (for example a ferromagnetic element, an antiferromagnetic element, a multiferromagnetic element or a ferrimagnetic element, for example a ferrite core) or can be a paramagnetic element. However, the component can also be a substrate, an insert or another component carrier, for example in a plate-in-plate configuration. The component can be surface-mounted on the component carrier and / or can be embedded inside the component carrier. In addition, other components can also be used as components, in particular those that generate and emit electromagnetic radiation and / or are sensitive to electromagnetic radiation propagated from the environment.

[0049] In an embodiment, the component carrier is a laminated component carrier. In such an embodiment, the component carrier is a composite of multilayer structures that are stacked and connected together by applying pressing force or heat.

[0050] The aspects defined above and further aspects of the invention are apparent from the examples of embodiment to be described hereinafter and are explained with reference to these examples of embodiment. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] Figures 1 to 8 1 illustrates a cross-sectional view of a structure obtained during the execution of a method for producing a component carrier with embedded components according to an exemplary embodiment of the present invention, the component carrier with embedded components such as Figure 8 Shown as part of a system consisting of component carrier and module.

[0052] Fig. 9 A cross-sectional view of a system according to another exemplary embodiment of the present invention is shown, the system comprising a Figures 1 to 7 The component carriers and further surface-mounted components produced are described.

[0053] Figures 10 to 14 1 illustrates a cross-sectional view of a structure obtained during the execution of a method for producing a component carrier with an embedded component according to another exemplary embodiment of the present invention, the component carrier with an embedded component being shown as Fig.14 Part of a system consisting of component carriers and modules. DETAILED DESCRIPTION

[0054] The illustrations in the drawings are schematic. In different drawings, similar or identical elements are provided with the same reference signs.

[0055] Before describing the exemplary embodiments in further detail with reference to the accompanying drawings, some basic considerations upon which the exemplary embodiments of the present invention were developed will be outlined.

[0056] According to an exemplary embodiment of the present invention, a component carrier is provided, and copper pillar technology or another suitable vertical connection structure can be used to achieve (preferably, direct) contact of one or more components in the component carrier. In particular, by using copper pillars to provide z-axis connection of embedded components, high alignment accuracy can be obtained on the components (especially chips). It is also advantageous to use one or more copper pillars as connection structures because this can achieve higher aspect ratios, such as aspect ratios in the range between 2:1 and 1:1, compared to, for example, laser conduction connections. It is particularly advantageous to use copper pillars to achieve z-axis interconnection of face-up components in the stack cavity. This can allow electrical coupling of memory-processor connections, connections to power modules, connections to one or more antennas, etc.

[0057] An exemplary embodiment of the present invention allows to apply a rewiring layer on the surface of the package. The diameter of the corresponding copper pillars may preferably be smaller than the connection surface of the rewiring layer. By this embodiment, the alignment area of ​​the copper pillars may be increased to the pad.

[0058] According to another exemplary embodiment of the present invention, a soldering station can be arranged on the electrically conductive connection structure to produce direct contact between external components and internal connection components (e.g., active components and copper pillars). In addition, such external components may also be connected to other connection points and internal components.

[0059] In another embodiment, a module may be applied in both of the above mentioned embodiments.

[0060] The corresponding component carrier or device can also be designed as a module comprising the components. As a result, the connection path can be reduced to a shorter range or even the shortest possible range.

[0061] The component carrier or module according to the exemplary embodiments may also be realized as a power core. It is also possible to provide a module which may be realized as a rewiring subcarrier (eg silicon interposer, HDI (high density integration) organic interposer).

[0062] Figures 1 to 8 The cross-sectional view of the structure obtained during the execution of the method for producing a component carrier 100 with an embedded component 108 is shown. Such a component carrier 100 according to an exemplary embodiment of the present invention is Figures 5 to 7 In Figure 8 In FIG. 1 , a component carrier 100 is shown as part of a system 170 according to an exemplary embodiment of the invention, the system 170 comprising the component carrier 100 and a module 160. These embodiments can be used, for example, in substrate technology.

[0063] Reference Figure 1 , a laminated stack 102 is provided, the stack 102 includes an electrically conductive layer structure 106 and an electrically insulating layer structure 104, and the electrically conductive layer structure 106 and the electrically insulating layer structure 104 are connected to each other by lamination (i.e., applying heat and / or pressure). As shown, the layer stack 102 includes a plurality of flat layer structures 104, 106, so that the formed component carrier 100 is a plate-like laminated printed circuit board (PCB) component carrier. The electrically conductive layer structure 106 includes a patterned metal layer, such as a patterned copper foil, and may also include a vertical through-connection portion, such as a laser perforation filled with copper. The electrically insulating layer structure 104 may include a sheet material, the sheet material includes a resin (especially an epoxy resin), and optionally, reinforcing particles (such as glass fibers or glass spheres) are included in the sheet material. For example, the electrically insulating layer structure 104 can be made of prepreg. A cavity 156 is formed in the stack 102.

[0064] Passive components 150 , 152 , such as capacitors or inductors, are embedded in the stack 102 .

[0065] Figure 1 Also illustrated is an active component 108 (such as a semiconductor chip implemented as a microprocessor) to be embedded in the cavity 156 of the stack 102. As shown, the component 108 has a plurality of electrically conductive connection structures 110 extending upwardly and parallel to each other. Figure 1 , component 108 is disposed above stack 102 with electrically conductive connection structure 110 facing away from stack 102, thereby placing component 108 in a configuration that allows the component to be subsequently inserted into cavity 156 (compare Figure 2 ). The component 108 includes a layer of adhesive structure 122 at the bottom surface.

[0066] Although not shown, the described manufacturing method may also be modified by not embedding the component 108 in the cavity 156 , but instead embedding the component 108 in a through hole that extends through the entire stack 102 .

[0067] Still alternatively and also not shown, component 108 may be embedded by being pressed between opposing planar layer structures of stack 102. This is particularly advantageous for components 108 having a very small thickness, for example thin and bare semiconductor wafers having a thickness of less than 50 μm.

[0068] Refer again Figure 1 , the component 108 is covered with an adhesive structure 122 on the bottom main surface facing the stack 102 and facing away from the connection structure 110. With the adhesive structure 122 incorporated in the component 108, the component 108 can then be inserted into the cavity 156 of the stack 102, so that the component 108 is connected to the stack 102 by the adhesive function of the adhesive structure 122. Additionally or alternatively, the adhesive material can be placed in the cavity 156. However, providing the adhesive structure 122 as part of the component 108 makes the manufacturing process particularly simple, because it may not be necessary to distribute the adhesive material in the cavity 156. The component 108 to be embedded in the stack 102 is therefore provided with a wafer attach film as the adhesive structure 122 at the bottom main surface of the component 108.

[0069] The active component 108 is provided on the other main surface opposite with an array of copper pillars 116 as electrically conductive connection structures 110. The copper pillars 116 extend from the body of the component 108, in particular a semiconductor block, to a free end 112. The component 108 is prepared for insertion into the cavity 156 of the stack 102. The stack 102 can be constructed as a substrate with a cavity 156 and embedded components 150, 152.

[0070] As illustrated by detail 149, an electrically conductive disk 119 may be provided between the body 108a of the component 108 on the one hand and the corresponding post 116 on the other hand. Thus, the component 108 may be provided with one or more such electrically conductive disks 119 as electrical terminals on one main surface or on two opposite main surfaces of the body 108a of the component 108. Thus, such one or more electrically conductive disks 119 may also form part of or even the entire connection structure 110 of any embodiment of the present invention. For the sake of simplicity, the disks 119 are only shown on the upper surface of the body 108a of the component 108. Figure 1 , but may be provided in each embodiment described with reference to the drawings.

[0071] like Figure 1As shown, the disc 119 may protrude from the body 108a of the component 108 in the vertical direction, but this is not necessary. Alternatively, the contact disc 119 located at the body 108a of the component 108 may also be flush with the outer surface of the body 108a, or even located in a (e.g. very small) recess (not shown). Thus, the disc 119 may, but need not, protrude and may generally represent an electrical contact at the outer surface delimiting the component 108.

[0072] Reference Figure 2 , the component 108 can be inserted and fitted in the cavity 156. In the embodiment shown, the assembly area at the bottom of the cavity 156 has no copper, i.e. no electrically conductive material of the electrically conductive layer structure 106. This has the advantage of reducing CTE (coefficient of thermal expansion) stresses. The assembly is maintained by an attachment film of adhesive material on the component 108 or by the application of a liquid adhesive on the back of the component 108 (compare Figure 1 Therefore, in order to obtain the bonding structure 122 Figure 2 The central body of the structure is shown with component 108 inserted into cavity 156 of the stack 102 such that adhesive structures 122 on the back major surface of component 108 couple component 108 to stack 102 .

[0073] In addition, two uncured resin films at stage B may be provided as an additional bonding structure 122 that may be laminated to the Figure 2 The laminated additional bonding structures 122 may include a matrix 121 of a still uncured resin, in which filler particles 124 having a diameter in the range between 0.5 μm and 1 μm are located (e.g. Figure 2 151). The filler particles 124 may be selected to fine tune the properties of the layer-type further bonding structure 122 within the framework of an easily manufacturable component carrier 100. For example, the filler particles 124 may be used to reduce CTE mismatch, enhance thermal conductivity, etc.

[0074] therefore, Figure 2 The following diagram shows the structure of the component 108 after it has been inserted into the cavity 156 so that the adhesive structure 122 of the component 108 is attached to the bottom of the cavity 156. Figure 1 The structure thus obtained is then sandwiched between two opposing electrically insulating layer structures forming a further bonding structure 122, which is implemented here as an at least partially uncured dielectric sheet. For example, the layer-type further bonding structure 122 may comprise a build-up material based on epoxy resin, such as (Ajinomoto laminated film) or prepreg material.

[0075] Figure 3 The structures shown can be connected by lamination, ie by applying mechanical pressure and / or heat energy. Figure 2 The central structure and the peripheral layers shown are obtained. During lamination, the previously uncured material of the further adhesive structure 122 becomes flowable, crosslinks, resolidifies and thereby solidifies. As a result of this lamination, the copper pillar-type connecting structure 110 is completely embedded in the material of the upper adhesive structure in the further adhesive structure 122. After said lamination, the free end 112 of the connecting structure 110 is already very close to the surface (e.g., the distance L is in the range between 0.5 μm and 5 μm, cf. detail 153).

[0076] Reference Figure 4 The free end 112 of the electrically conductive connection structure 110 is exposed relative to the stack 102 by plasma treatment (as schematically shown by reference numeral 158) so that: the exposed free end 112 is flush with the outer major surface 114 of the stack 102 (or even extends beyond the outer major surface 114, as shown in FIG. Fig.12 That is, the exposed free end is now aligned with the flat outer major surface 114 of the stack 102, as also illustrated in detail 157. Thus, after the component 108 is connected to the stack 102 via the bonding structure 122, the plasma treatment subsequently removes the surface portion of the uppermost bonding structure 122, thereby exposing the electrically conductive connection structure 110. Exposing the copper pillar 116 can be done by plasma, or by another material removal process, such as mechanical grinding and / or chemical treatment. Thus, the electrically conductive connection structure 110 can be exposed to enable direct electronic component interconnection.

[0077] To obtain Figure 5 In the component carrier 100 shown in FIG. 1 , further electrically conductive layer structures 106 in the form of laser perforations filled with copper can be formed in the upper and lower electrically insulating layer structures 104 by laser drilling and then by copper plating. As a result, the internal electrically conductive layer structures 106 can be connected up to Figure 5 The outer surface of a component carrier 100 is shown.

[0078] Reference Figure 6 ,exist Figure 5 Another redistribution layer is formed on the top main surface and the bottom main surface of the component carrier 100 to provide additional connection surfaces.

[0079] More precisely, in order to obtain Figure 6 The component carrier 100 shown, Figure 5 All exposed electrically conductive surfaces of the structure shown may be covered with a plate 118. This may be accomplished, for example, by Figure 5This is achieved by laminating copper foil on both the upper and lower main surfaces of the component carrier 100 shown, followed by a corresponding patterning process. The patterning can be implemented by photolithography and etching processes. Thus, an external electrically conductive connection surface can be formed.

[0080] As shown, the pillar 116 may have a diameter d that is smaller than the diameter D of the disk 118. For example, the diameter d of the copper pillar 116 may be in the range of 15 μm to 20 μm. In contrast, the diameter D of the disk 118 (which may also be denoted as a pad (solder pad)) may be 44 μm (or more generally in the range of 30 μm to 60 μm). This may correspond to an alignment tolerance of ±12 μm.

[0081] Reference Figure 7 , forming a solder deposit. Thereafter, the PCB-type component carrier 100 can be completed (e.g. by forming a solder mask or the like). Thus, the illustrated component carrier 100 according to an exemplary embodiment of the present invention can be formed by depositing solder material 120 on the exposed electrically conductive surface, in particular on the Figure 6 The soldering structure 120 is formed as a hemispherical body in the embodiment shown. The soldering structure 120 simplifies the soldering connections that can be established to electrically connect the embedded component 108 and the passive components 150, 152 to the electronic environment.

[0082] like Figure 7 Alternatively, the welding structure 120 can also directly cover the column 116 (ie, when there is no disk 118 on the top of the column 116), as shown in detail 189 of FIG. In this embodiment, the welding structure 120 can partially cover the horizontal flange surface of the column 116 and a portion of the side surface of the column 116.

[0083] Figure 7A cross-sectional view of a component carrier 100 with a stack 102 comprising an electrically insulating layer structure 104 and an electrically conductive layer structure 106 is shown. An active component 108 having electrically conductive connection structures 110 extending parallel and vertically upward in the form of copper pillars 116 and pads 118 is partially embedded in the stack 102 and partially exposed relative to the stack 102. More specifically, the electrically conductive connection structures 110 of the component 108 are exposed relative to the stack 102 such that: respective exposed free ends 112 of the electrically conductive connection structures 110 of the component 108 protrude slightly beyond the outer main surface 114 of the stack 102. More precisely, the electrically conductive connection structures 110 include pads 118 or pads, each of which is formed on a respective one of the pillars 116. The aspect ratio of the pillars 116 (i.e. the ratio between height and diameter) is greater than 1 to establish an extended z-axis connection within the component carrier 100. The exposed electrically conductive connection structure 110 is configured for directly electrically connecting the embedded component 108 to the electronic peripheral by soldering the soldering structure 120 on top of the electrically conductive connection structure 110 located on the electronic peripheral. Figure 7 Each of the exposed free ends 112 of the electrically conductive connecting structure 110 corresponds to an end face of a respective disk 118 which is in turn covered by the hemispherical solder material in the form of the solder material 102 .

[0084] Alternatively, for example, without providing the disk 118, the exposed free end 112 of the electrically conductive connection structure 110 may be formed by making the horizontal end surface of the pillar 116 flush or aligned with the main surface 114, such as Figure 5 shown.

[0085] The mentioned geometry thus allows applying a rewiring layer on the surface of the package or component carrier 100. The diameter of the copper pillars 116 is smaller than the connection surface of the rewiring layer. By this embodiment, the alignment area of ​​the copper pillars 116 is increased to the size of the corresponding pads 118.

[0086] Reference Figure 8 The exposed electrically conductive connection structures 110 of the component carrier 100 can be directly soldered connected via soldering structures 120 to a module 160 comprising further components 174 , 176 , which can be implemented as semiconductor chips (eg memory chips).

[0087] therefore, Figure 8 Module 160 and Figure 7100 of the component carrier. In order to obtain the system 170, the module 160 and the component carrier 100 can be connected by connecting the exposed disk 172 of the module 160 to the solder material 120 on the upper main surface of the component carrier 100. As shown, the module 160 may include embedded components 174, 176, such as semiconductor chips. The semiconductor chip may be, for example, a memory chip or a microprocessor. The components 174, 176 are embedded in a further stack 173 including a further electrically insulating layer structure 175 and a further electrically conductive layer structure 178. Since the component 108 is embedded in the component carrier 100 so that the electrically conductive connection structure 110 extends up to and even beyond the upper main surface 114 of the component carrier 100, the electrical path in the z direction is very short. This makes it possible to transmit signals with low loss and keeps the obtained system 170 highly compact.

[0088] Fig. 9 A cross-sectional view of a system 170 is shown, the system 170 comprising Figures 1 to 7 The manufactured component carrier 100 and further surface-mounted components 174 , 176 according to another exemplary embodiment of the present invention.

[0089] therefore, Fig. 9 The diagram shows the Figure 7 Another system 170 of a component carrier 100 and further components 174, 176, which are directly surface mounted on the component carrier 100 by establishing a solder connection between a plate 180 of the further components 174, 176 on the one hand and a solder material 120 on the other hand. For example, the first further component 174 can be a processor and the second further component 176 can be a memory chip. More generally, the further components 174, 176 can be active or passive wafers, micro-electromechanical systems (MEMS), soldered antenna structures, modules, further component carriers 100, etc. Optionally, an underfill can be provided to fill at least a portion of the gap between the component carrier 100 and the further components 174, 176. The component 108 can be, for example, a level converter, an active wafer, a passive array (e.g., a silicon capacitor), a transceiver, etc.

[0090] In reference Figures 1 to 9 In the case of the described embodiment, a redistribution structure 193 can be provided on the surface of the component carrier 100. In particular, Fig. 9 and Figure 6 As shown, the diameter d of the pillar 116 is smaller than the diameter D of the pad or land 118 (the pad or land 118 corresponds to the connection area of ​​the redistribution structure 193). Therefore, the alignment area of ​​the copper pillar 116 relative to the connection area can be increased.

[0091] Figures 10 to 14 The cross-sectional view of a structure obtained during the execution of the method for producing a component carrier 100 with an embedded component 108 is shown. Fig.14 Shown in FIG. 1 is a part of a system 170 comprising a component carrier 100 and a module 160 according to a further exemplary embodiment of the invention.

[0092] Fig.10 The arrangement shown corresponds to Figure 1 The arrangement shown is different in that, according to Fig.10 , the exposed upper ends of the pillars 116 are covered by the soldering structure 120. Thus, the soldering material 120 may already be provided before the component 108 is embedded in the cavity 156. The embodiments described below are denoted as active bridge embodiments.

[0093] Fig.11 The layer structure shown can be based on Fig.10 The structure shown is similar to that in the above reference Figure 2 Obtained in the same manner as described.

[0094] To obtain Fig.12 The structure shown in FIG. 1 shows an electrically insulating layer structure 104 corresponding to the additional layer-type adhesive structure 122, which can be formed in the same manner as in FIG. Figure 3 The top and bottom of the stack 102 with the interposed components 108 are laminated in a manner similar to that described above. Figure 3 In contrast, the thickness of the further electrically insulating layer structure 104 to be laminated on the top and bottom and made of uncured material can be formed thin enough so that the solder material 120 on the pillars 116 remains exposed after the lamination process. This makes a plasma process or the like unnecessary. In other words, in accordance with Fig.12 During the lamination process, copper pillars 116 with solder material 120 are placed on major surface 114 (eg, extending 0.5 μm to 5 μm beyond upper major surface 114 ).

[0095] Directly refer to Fig.13 , the module 160 can be placed above the component carrier 100 to Figure 8 Subsequent interconnections are performed in a manner similar to that described. However, according to Fig.13 , the diameter of the pad, ie the lateral extension of the disk 172 of the module 160, may be 50 μm. The pillar 116 may have a dimension greater than 44 μm. The alignment accuracy may be ±8 μm.

[0096] Still refer to Fig.13Before the embedding process, a corresponding soldering station (compare reference numeral 120) may be pre-formed on the copper pillar 116 so that the external component directly contacts the internal connection component 108 (e.g., the active component 108 having the copper pillar 116). More generally, such an external component may also be connected to another connection point and an internal component.

[0097] Fig.14 A cross-sectional view of a system 170 according to an exemplary embodiment of the invention is shown, which system can be obtained by connecting a component carrier 100 with a module 160. Thus, Fig.14 The result of the interconnection between the component carrier 100 and the module 160 by welding is shown, so as to obtain Fig.14 The illustrated system 170 is easily manufacturable. As shown, the connection between the component carrier 100 and the module 160 can be established directly without redistributing the layers.

[0098] Optionally, an underfill may be filled between the component carrier 100 and the module 160 (compare reference numeral 181 ).

[0099] Reference Figures 10 to 14 The described embodiment uses a soldering station or solder material 120 directly on the copper pillars 116 of the component carrier 108 to achieve a direct electrical connection of the external further components 174, 176 to the internal embedded component 108. The external further components 174, 176 are electrically connected to the further components 150, 152 of the component carrier 100 via an additional connection structure 197.

[0100] It should be noted that the term "comprising" does not exclude other elements or steps, and "a" or "an" does not exclude a plurality. Furthermore, elements described in association with different embodiments may be combined.

[0101] It should also be noted that reference signs in the claims should not be construed as limiting the scope of the claims.

[0102] The implementation of the invention is not limited to the preferred embodiments shown in the drawings and described above. On the contrary, multiple modifications using the solutions shown and according to the principle of the invention are also possible, even in the case of fundamentally different embodiments.

Claims

1. A system (170) comprising a component carrier (100), in, The component carrier (100) comprises: A laminated stack (102) comprising at least one electrically insulating layer structure (104) and at least one electrically conductive layer structure (106); and a component (108) having at least one electrically conductive connection structure (110) and embedded in the stack (102); wherein at least one of the electrically conductive connection structures (110) of the component (108) is exposed relative to the stack (102) such that: an exposed free end (112) of at least one of the electrically conductive connection structures (110) of the component (108) is flush with an outer main surface (114) of the stack (102) or extends beyond the outer main surface (114) of the stack (102), wherein the stack (102) comprises an electrically conductive layer structure (106) on the upper and lower sides of the electrically insulating layer structure (104) in which the component (108) is embedded, The component carrier (100) is a printed circuit board, an organic interposer, an integrated circuit substrate, or a preform of the printed circuit board and substrate. wherein at least one of the electrically conductive connection structures (110) comprises at least one post (116) and at least one plate (118), wherein at least one of the plates (118) is spaced apart from the body (108a) of the component (108) by at least one of the posts (116); wherein the disk (118) has a lateral dimension that is greater than a lateral dimension of the post (116); wherein at least one of the plates (118) is at least partially exposed relative to the stack (102), and Wherein, the system (170) further comprises: At least two further components (174, 176), each of which is vertically stacked with the component carrier (100), and each of which is electrically connected to the embedded component (108) via at least one of the electrically conductive connecting structures (110), so that the component (108) serves as a bridge.

2. The system (170) of claim 1, wherein: At least one of the pillars (116) is at least one copper pillar.

3. The system (170) of claim 1, wherein: At least one of the disks (118) is at least one copper disk.

4. The system (170) of claim 1, wherein: At least one of the electrically conductive connection structures (110) further comprises at least one further disk (119).

5. The system (170) of claim 4, wherein: The at least one further disc (119) is located directly on the body (108a) of the component (108).

6. The system (170) of claim 4, wherein: The at least one further disc (119) is located directly on the body (108a) of the component (108) and spaces the body (108a) of the component (108) apart from at least one of the posts (116).

7. The system (170) of claim 1, wherein: The system (170) includes at least one of the following features: wherein at least one of the electrically conductive connection structures (110) has an aspect ratio of at least 0.3; wherein the exposed electrically conductive connection structure (110) is configured for direct electrical connection to an electronic peripheral; wherein the exposed electrically conductive connection structure (110) is configured to be connectable to an electronic peripheral portion through a redistribution structure (193) or without the redistribution structure (193); wherein at least one exposed free end portion (112) of at least one of the electrically conductive connection structures (110) is covered with a welding material (120); wherein at least one exposed free end portion (112) of at least one of the electrically conductive connection structures (110) corresponds to an end surface of at least one of the disks (118); The component carrier (100) comprises at least one further component embedded in the stack (102); wherein at least one of the at least one electrically conductive layer structures (106) comprises at least one of copper, aluminum, nickel, silver, gold, titanium, palladium and tungsten; wherein at least one of the at least one electrical insulating layer structures (104) comprises at least one of resin, glass, prepreg material, ceramic and metal oxide; Therein, the component carrier (100) is formed as a plate.

8. The system (170) of claim 1, wherein: At least one of the at least one electrically insulating layer structures (104) comprises at least one of cyanate ester, polyphenylene derivative, polyimide, polyamide, liquid crystal polymer, epoxy-based laminated film and polytetrafluoroethylene.

9. The system (170) of claim 1, wherein: At least one of the electrically conductive connection structures (110) has an aspect ratio of at least 0.

5.

10. The system (170) of claim 1, wherein: At least one of the electrically conductive connection structures (110) has an aspect ratio of at least 1.

11. The system (170) of claim 1, wherein: At least one of the electrically conductive connection structures (110) has an aspect ratio of at least 2.

12. The system (170) of claim 1, wherein: The exposed electrically conductive connection structure (110) is configured for direct electrical connection to the further component (174, 176).

13. The system (170) of claim 1, wherein: The exposed electrically conductive connection structure (110) is configured for direct electrical connection to a semiconductor chip.

14. The system (170) of claim 7, wherein: At least one of the disks is covered with a solder material (120).

15. The system (170) of claim 7, wherein: The further component of the component carrier (100) is electrically connected to the component (108).

16. The system (170) of claim 1, wherein: The component (108) is an electronic component.

17. The system (170) of claim 1, wherein: The component (108) is a non-conductive and / or conductive inlay.

18. The system (170) of claim 1, wherein: The component (108) is a heat transfer unit or a light guiding element.

19. The system (170) of claim 1, wherein: The component (108) is an active electronic component or a passive electronic component.

20. The system (170) of claim 1, wherein: The component (108) is an energy harvesting unit, a signal processing component or an electromechanical transducer.

21. The system (170) of claim 1, wherein: The component (108) is a storage device, a power management component, a cryptographic component or a magnetic element.

22. The system (170) of claim 1, wherein: The component (108) is a capacitor, a resistor, an inductor or an accumulator.

23. The system (170) of claim 1, wherein: The component (108) is a filter, a voltage converter, an actuator, a switch, a camera or an antenna.

24. The system (170) of claim 1, wherein: The component (108) is an electronic chip.

25. The system (170) of claim 1, wherein: The component (108) is an integrated circuit.

26. The system (170) of claim 1, wherein: The component (108) is an optoelectronic interface element.

27. The system (170) of claim 1, wherein: The component (108) is a transmitter and / or a receiver.

28. The system (170) of claim 1, wherein: The component (108) is a micro-electromechanical system.

29. The system (170) of claim 1, wherein: The component (108) is a microprocessor.

30. The system (170) of claim 1, wherein: The component (108) is a further component carrier.

31. The system (170) of claim 1, wherein: The component (108) is a logic chip.

32. The system (170) of claim 7, wherein: Any of the mentioned copper, aluminum, nickel, silver, gold, titanium, palladium and tungsten is coated with a superconducting material.

33. The system (170) of claim 32, wherein: The superconducting material is graphene.

34. The system (170) of claim 7, wherein: The resin is a reinforced resin or a non-reinforced resin.

35. The system (170) of claim 7, wherein: The resin is an epoxy resin or a bismaleimide-triazine resin.

36. The system (170) of claim 1, wherein: At least one of the at least one electrically insulating layer structures (104) comprises FR-4 or FR-5.

37. The system (170) of claim 1, wherein: The component carrier (100) is designed as a laminated component carrier.

38. The system (170) of claim 1, wherein: The system (170) includes at least one of the following features: At least one of the additional components (174, 176) is a non-embedded component surface mounted on the component carrier (100); At least one of the further components (174, 176) is embedded in the material of a module (160) connected to the component carrier (100) and forms part of the module (160).

39. A method of manufacturing a system (170) comprising a component carrier (100), wherein: The method comprises: laminating a stack (102) or providing a laminated stack (102), the stack (102) comprising at least one electrically conductive layer structure (106) and at least one electrically insulating layer structure (104); embedding a component (108) having at least one electrically conductive connection structure (110) in the stack (102); exposing a free end (112) of at least one of the electrically conductive connection structures (110) relative to the stack (102) such that: the exposed free end (112) is flush with an outer major surface (114) of the stack (102) or extends beyond the outer major surface (114) of the stack (102), wherein the stack (102) comprises an electrically conductive layer structure (106) on the upper and lower sides of the electrically insulating layer structure (104) in which the component (108) is embedded, The component carrier (100) is one of a printed circuit board, an organic interposer and an integrated circuit substrate. wherein at least one of the electrically conductive connection structures (110) comprises at least one post (116) and at least one plate (118), wherein at least one of the plates (118) is spaced apart from the body (108a) of the component (108) by at least one of the posts (116); wherein the disk (118) has a lateral dimension that is greater than a lateral dimension of the post (116); wherein at least one of the plates (118) is at least partially exposed relative to the stack (102), The method further comprises directly electrically connecting the exposed electrically conductive connection structure (110) to at least two other components (174, 176) or directly electrically connecting the exposed electrically conductive connection structure (110) to a module (160) including at least two other components (174, 176), Each additional component (174, 176) is vertically stacked with the component carrier (100), and each additional component (174, 176) is electrically connected to the embedded component (108) through at least one of the electrically conductive connecting structures (110), so that the component (108) serves as a bridge.

40. The method of claim 39, wherein: The method comprises at least one of the following features: Wherein, the method comprises electrically connecting the exposed electrically conductive connection structure (110) directly to an electronic peripheral; The method comprises connecting the exposed electrically conductive connection structure (110) to an electronic peripheral part through a redistribution structure (193) or without the redistribution structure (193); Wherein, the method includes inserting the component (108) into a cavity (156) of the stack (102); Wherein, the method includes embedding the component (108) in a through hole extending through the stack (102); wherein the method comprises pressing the component (108) between opposing planar layer structures of the stack (102); The method comprises covering at least one exposed free end (112) of at least one of the electrically conductive connection structures (110) with a solder material (120) prior to the embedding.

41. The method of claim 39, wherein: The method includes electrically connecting the exposed electrically conductive connection structure (110) directly and in a vertically exclusive manner to an electronic peripheral.

42. The method of claim 39, wherein: The method includes electrically connecting the exposed electrically conductive connection structure (110) directly to a semiconductor chip.

43. The method of claim 39, wherein: The method comprises electrically connecting the exposed electrically conductive connection structure (110) directly and in an exclusively vertical manner to a semiconductor chip.

44. The method of claim 40, wherein: The method includes inserting the component (108) in the cavity (156) of the stack (102) in a face-up orientation.

45. The method of claim 40, wherein: The component (108) has a thickness of less than 50 μm.

46. ​​The method of claim 39, wherein: The method includes inserting the component (108) having an adhesive structure (122) on at least a bottom surface into the stack (102), thereby connecting the component (108) to the stack (102).

47. The method of claim 39, wherein: The method includes inserting the component (108) into a cavity (156) of the stack (102), the cavity (156) of the stack (102) having an adhesive structure (122) on at least a bottom surface of the cavity (156) of the stack (102), thereby connecting the component (108) to the stack (102).

48. The method of claim 39, wherein: The method includes inserting the component (108) into the stack (102), and then providing a bonding structure (122) to the component (108) and the stack (102), thereby connecting the component (108) to the stack (102).

49. The method of claim 48, wherein: The bonding structure (122) includes filler particles (124).

50. The method of claim 49, wherein: The size of the filler particles (124) ranges between 0.1 μm and 5 μm.

51. The method of claim 49, wherein: The size of the filler particles (124) ranges between 0.5 μm and 1 μm.

52. The method of claim 48, wherein: The method includes connecting the stack (102) to the component (108) via the bonding structure (122) by lamination.

53. The method of claim 39, wherein: The method comprises: connecting the component (108) to the stack (102) via an adhesive structure (122); and The surface portion of the adhesive structure (122) is then removed, thereby exposing the at least one electrically conductive connection structure (110) relative to the stack (102).

54. The method of claim 39, wherein: The method comprises: connecting the component (108) to the stack (102) via an adhesive structure (122); and The surface portion of the adhesive structure (122) is then removed without removing material of at least one of the electrically conductive connecting structures (110), thereby exposing at least one of the electrically conductive connecting structures (110) relative to the stack (102).

55. The method of claim 39, wherein: The method comprises: connecting the component (108) to the stack (102) via an adhesive structure (122); and The surface portion of the bonding structure (122) is then removed by plasma treatment, thereby exposing at least one of the electrically conductive connecting structures (110) relative to the stack (102).

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