Multi-module integrated interposer and semiconductor device formed therefrom

Abstract

The present invention is entitled "Multi-module integrated interposer and semiconductor device formed thereby". The present invention discloses a semiconductor device, including a multi-module interposer for enabling communication between one or more semiconductor dies within the device and a host device on which the semiconductor device is mounted. The multi-module interposer can be formed at the wafer level and provides fan-out signal paths to and from the one or more dies in the device. In addition, the multi-module interposer allows any of a variety of different semiconductor packaging configurations to be formed at the wafer level, including, for example, wire bonding packaging, flip chip packaging, and through silicon via (TSV) packaging.

Description

Background Art

[0001] Strong growth in demand for portable consumer electronic devices has driven the need for high-capacity storage devices. Non-volatile semiconductor storage devices, such as flash memory cards, have been widely used to meet the growing demand for digital information storage and exchange. Their portability, versatility, and rugged design, as well as their high reliability and large capacity, make such storage devices ideal for use in a variety of electronic devices, including, for example, digital cameras, digital music players, video game consoles, PDAs, and cellular phones.

[0002] Although many different packaging configurations are known, flash memory semiconductor products can generally be manufactured as a system-in-package (SIP) or a multi-chip module (MCM), in which multiple semiconductor dies are mounted and interconnected to the upper surface of a substrate. The substrate can generally include a rigid dielectric base having a conductive layer etched on one or both sides. Solder balls are generally mounted on contact pads formed on the lower surface of the substrate to allow the substrate to be soldered to a host device, such as a printed circuit board. Once mounted, signals can be transmitted between the semiconductor die and the host device via the substrate.

[0003] There is a continuing need to provide greater storage capacity in a smaller overall form factor semiconductor package. One area of ​​exploration is to provide a semiconductor package without a substrate, but to date such efforts to provide a multi-chip semiconductor package without a substrate have proven difficult. BRIEF DESCRIPTION OF THE DRAWINGS

[0004] Figure 1 is a flow chart for forming a semiconductor device according to an embodiment of the present technology.

[0005] Figure 2 is a top view of a semiconductor wafer including a multi-module interposer according to an embodiment of the present technology.

[0006] Figure 3 is a top view of a multi-module interposer including a first configuration of surface bonding pads in accordance with an embodiment of the present technology.

[0007] Figure 4 is a top view of a multi-module interposer including a second configuration of surface bonding pads in accordance with an embodiment of the present technology.

[0008] Figure 5 is a top view of a third configuration of multi-module interposers including surface bonding pads in accordance with an embodiment of the present technology.

[0009] Figure 6 is a cross-sectional edge view of a wafer including a plurality of multi-module interposers at a first stage of fabrication in accordance with an embodiment of the present technology.

[0010] Figure 7 is a cross-sectional edge view of a wafer including a plurality of multi-module interposers and semiconductor dies at a second stage of fabrication in accordance with an embodiment of the present technology.

[0011] Figure 8 is a cross-sectional edge view of a wafer including a plurality of multi-module interposers and packaged semiconductor dies at a third manufacturing stage in accordance with an embodiment of the present technology.

[0012] Fig. 9 is a cross-sectional edge view of a thinned wafer including a plurality of multi-module interposers and packaged semiconductor dies at a fourth manufacturing stage in accordance with an embodiment of the present technology.

[0013] Fig.10 is a cross-sectional edge view of a thinned wafer including a plurality of multi-module interposers, packaged semiconductor die, and a redistribution layer at a fifth stage of manufacturing in accordance with an embodiment of the present technology.

[0014] Fig.11 is a cross-sectional edge view of a plurality of completed semiconductor devices including a multi-module interposer in accordance with an embodiment of the present technology.

[0015] Fig.12 is a bottom perspective view of a semiconductor device including a multi-module interposer according to an embodiment of the present technology. DETAILED DESCRIPTION

[0016] The technology of the present invention will now be described with reference to the accompanying drawings, which, in an embodiment, relate to a semiconductor device including a multi-module interposer for enabling communication between one or more semiconductor dies within the device and a host device on which the semiconductor device is mounted. The multi-module interposer can be formed at the wafer level and provides fan-out signal paths to one or more dies in the device and fan-out signal paths from one or more dies in the device. In addition, the multi-module interposer allows any of a variety of different semiconductor package configurations to be formed at the wafer level, including, for example, wire bond packaging, flip chip packaging, and through silicon via (TSV) packaging.

[0017] It is understood that the present invention can be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, these embodiments are provided so that this disclosure will be thorough and complete, and the present invention will be fully communicated to those skilled in the art. In fact, the present invention is intended to cover alternatives, modifications and equivalents of these embodiments, which are all included in the scope and essence of the present invention as defined by the appended claims. In addition, in the following detailed description of the present invention, many specific details are given in order to provide a thorough understanding of the present invention. However, it will be apparent to those of ordinary skill in the art that the present invention can be implemented without such specific details.

[0018] The terms "top" and "bottom", "upper" and "lower", and "vertical" and "horizontal", and forms thereof, as used herein, are used herein by way of example only and for exemplary purposes, and are not intended to limit the description of the technology, as the referenced items may be interchanged in position and orientation. Additionally, as used herein, the terms "substantially" and / or "approximately" mean that a specified dimension or parameter may vary within acceptable manufacturing tolerances for a given application. In one embodiment, the acceptable manufacturing tolerance is ±2.5% of a given dimension.

[0019] Now refer to Figure 1 Flowchart and Figures 2 to 12 In step 200 and step 202, the semiconductor wafer 100 can be processed into a plurality of multi-module interposers 102, such as Figure 2 As shown. Semiconductor wafer 100 may initially be an ingot of wafer material, which may be single crystal silicon grown according to a Czochralski (CZ) or floating zone (FZ) process. However, in other embodiments, wafer 100 may be formed from other materials and by other processes.

[0020] The semiconductor wafer 100 can be cut from the ingot and has a first major planar surface 104 and a second major planar surface 105 ( Figure 6 ) are polished on both to provide a smooth surface. The first major surface 104 may undergo various processing steps to separate the wafer 100 into corresponding multi-module interposers 102. Specifically, in step 200, the multi-module interposer 102 may be processed in an embodiment to include internal electrical connections formed in a dielectric substrate including layer 114 and layer 116, such as Figure 6 A cross-sectional edge view is shown. Figure 2 The number of multi-module interposers 102 shown on the wafer 100 in FIG. 1 is for illustrative purposes, and the wafer 100 may include more multi-module interposers 102 than shown in other embodiments.

[0021] The internal electrical connections within each interposer 102 may include multiple layers of metal interconnects 110 and vias 112 sequentially formed through layers of dielectric film 116. The metal interconnects 110, vias 112, and dielectric film layers 116 may be formed one layer at a time using photolithography and thin film deposition processes. The photolithography process may include, for example, pattern definition, plasma, chemical or dry etching, and polishing. The thin film deposition process may include, for example, sputtering and / or chemical vapor deposition. The metal interconnects 110 may be formed of various conductive metals, including, for example, copper and copper alloys known in the art, and the vias 112 may be lined with and / or filled with various conductive metals, including, for example, tungsten, copper, and copper alloys known in the art.

[0022] In step 202, bonding pads 120 may be formed on the major planar surface 104 of the multi-module interposer 102. Figure 3 , Figure 4 and Figure 5 As shown, in different embodiments of the present technology, the bond pads 120 may be formed in a variety of different patterns in the planar surface 104 . Figure 3 A uniform pattern of rows and columns of bond pads 120 is shown. Although the rows and columns are shown as being aligned with each other, it should be understood that in other embodiments, the rows and / or columns are offset from each other. Figure 4 A similar configuration of bond pads 120 is shown, wherein a central portion of the interposer 102 is devoid of bond pads. Figure 5 A configuration with a single row of pads is shown. It should be understood that Figures 3 to 5 The number of bonding pads 120 and the pattern of bonding pads 120 shown in FIG. 1 are for illustrative purposes, and the bonding pads 120 may be provided in the major planar surface 104 of the multi-module interposer 102 in other numbers and in various other configurations.

[0023] Furthermore, it should be understood that various interposers 102 on a single wafer 100 may each have the same pattern of bond pads 120. Alternatively, different interposers 102 on a single wafer 100 may have different patterns of bond pads 120. In such embodiments, a wafer map may be developed that defines the different types of semiconductor packages to be formed on the various interposers 102 (e.g., wire bonds, flip chips, TSVs), and the pattern of the bond pads 120 on the various interposers 102 may be customized according to the wafer map.

[0024] To form the bonding pad 120, a passivation layer 122 ( Figure 6). The passivation layer 122 can be etched, and each bonding pad 120 can be formed on the liner 124 in the etched area of ​​the passivation layer. As known in the art, the bonding pad 120 can be formed of, for example, copper, aluminum, and alloys thereof, and the liner 124 can be formed of, for example, a titanium / titanium nitride stack (such as, for example, Ti / TiN / Ti), but these materials can vary in other embodiments. The bonding pad 120 and the liner 124 can be applied by vapor deposition and / or electroplating techniques. The bonding pad and the liner together can have a thickness of 720nm, but in other embodiments the thickness can be greater or less. Different groups of bonding pads 120 can be electrically connected to each other through metal interconnects 110 and through holes 112.

[0025] The internal metal connections also include a series of vias 130 extending from the bottommost metal interconnect 110 downwardly into the dielectric layer 114 of the wafer 100. As described below, the dielectric layer 114 is thinned during a back grinding process, thereby exposing one end of the vias 130 at the back surface of the wafer 100 (opposite surface 104).

[0026] In step 208, semiconductor die 132 may be attached to corresponding multi-module interposers 102 on wafer 100, such as Figure 7 Dies 132 are mounted on the surface 104 of the respective interposer 102, such as by a die attach film (DAF) on the lowermost semiconductor die, and are electrically coupled to the bond pads 120 of the respective interposer 102. The type of electrical connections depends on the semiconductor package configuration.

[0027] For example, on the left Figure 7 A stack of bonding pads 120 (such as Figure 5 1 and 10. Wire-bonded semiconductor die 132 may be stacked in an offset stepped configuration to leave a row of bond pads exposed on die 132 at each level of the stack. Wire bonds 134 may then be formed, with wire bonding capillaries (not shown) electrically coupling each of semiconductor die 132 to each other and to interposer 102 of wafer 100. Figure 7 Also shown on the left side of FIG. 1 are passive devices 135 , such as, for example, resistors, capacitors, and / or inductors, which are mounted in association with the wire-bonded die stack. Any package configuration may also include passive devices 135 .

[0028] Figure 7The middle portion of FIG. 1 shows a second semiconductor package configuration in the form of a flip-chip semiconductor die 132. The flip-chip semiconductor die 132 may include a ball bonding pattern on a lower surface of the semiconductor die 132 (the surface 104 facing the wafer 100) that mates with a pattern of bonding pads 120 on the interposer 102 (such as Figure 4 The pattern of the pads 120 shown in FIG. 1 is bonded.

[0029] Figure 7 The right side of FIG. 4 shows a third semiconductor package configuration in the form of vertically stacked semiconductor dies electrically coupled to bonding pads 120 through through silicon vias 136 .

[0030] In an embodiment, a single wafer 100 may have Figure 7 102). As described above, a wafer map may be prepared showing which type of packaging configuration is to be formed on which interposer 102 on the wafer 100. Also as described above, the pattern of bonding pads 120 for a given interposer 102 may be customized for the type of packaging configuration to be formed on that interposer 102. Alternatively, a single pattern of bonding pads 120 may be used on all interposers 102, but only some of those bonding pads may be used depending on the packaging configuration.

[0031] In another embodiment, all interposers 102 on a given wafer 100 may accommodate the same type of packaging configuration. Thus, all interposers 102 on a wafer 100 may accommodate a wire bonded semiconductor die packaging configuration, all interposers 102 on a wafer 100 may accommodate a flip chip semiconductor die packaging configuration, or all interposers 102 on a wafer 100 may accommodate a TSV semiconductor die packaging configuration. Although wire bonded, flip chip, and TSV packaging configurations are shown, it should be understood that other types of packaging configurations may be used instead. Figure 7 Other types of packaging configurations may be used, or in addition to those shown in this figure.

[0032] The semiconductor die 132 in any configuration can be any of a variety of semiconductor dies, including, for example, a memory die such as 2D NAND flash memory or 3D BiCS (bit cost scaling), V-NAND or other 3D flash memory. However, other types of semiconductor dies can be used, including, for example, a controller die such as an ASIC, or a RAM such as SDRAM, DDRSDRAM, LPDDR, and GDDR. The number of dies 132 in a stacked die package can vary between, for example, 2, 4, 8, 16, 32, and 64 dies, but other numbers of dies may be present in other embodiments.

[0033] See again Figure 1 After semiconductor die 132 are mounted to their respective interposers 102, semiconductor die 132 may be encapsulated in a molding compound 140 in step 210, such as Figure 8 As shown. The molding compound 140 may include, for example, solid epoxy resins, phenolic resins, fused silica, crystalline silica, carbon black, and / or metal hydroxides. Other molding compounds from other manufacturers are also contemplated. The molding compound may be applied by various known processes, including by compression molding, FFT (no flow thin) molding, transfer molding, or injection molding techniques.

[0034] Once the die 132 are packaged, the wafer 100 may be thinned in a back grinding process step 214, such as Fig. 9 As shown. The back grinding step 214 can achieve two goals. First, the back grinding step thins the dielectric layer 114 of the wafer 100 to provide a final wafer thickness. In one example, the back grinding step can thin the wafer from about 760 μm to 30 μm, but these thicknesses can vary in other embodiments. Second, the back grinding step can expose the through holes 130 at the bottom surface 105 of the wafer 100, such as Fig. 9 shown.

[0035] In step 216, a redistribution layer (RDL) 144 may be formed on the surface 105 of the wafer 100, such as Fig.10 The RDL 144 can electrically redistribute the pattern of vias 130 to the pattern of contact pads 146 on the bottom surface of the RDL 144. Solder balls 148 can be mounted on the contact pads 146 in step 220. Thus, in accordance with aspects of the present technology, selected bond pads 120 are electrically coupled to selected solder balls 148 using the multi-module interposer 102.

[0036] In step 224, wafer 100 may be diced to separate corresponding multi-module interposers 102 and semiconductor dies mounted thereon into individual semiconductor devices 150, such as Fig.11 Device 150 may be cut by various methods, including by saw blade, laser, and water jet cutting methods. Fig.12 1 is a bottom perspective view of a semiconductor device 150 showing a pattern of solder balls 148. The specific pattern of solder balls 148 shown is by way of example, and the pattern and number of solder balls may vary in other embodiments. The semiconductor device 150 may then be mounted on a host device (not shown) by soldering the solder balls 148 to contact pads of the host device. Thereafter, communication between the semiconductor device 150 and the host device may be accomplished through the multi-module interposer 102.

[0037] It should be understood that in other embodiments, Figure 1 The processing steps described in the flowchart of can be formed in a different order. In one such example, the wafer 100 can be thinned (step 214), the RDL 144 is attached to the wafer (step 216) and the solder balls 148 can be attached to the RDL 144, all before the step 208 of connecting the semiconductor die and passive components. One advantage of this ordering of steps is that the fully manufactured wafer 100 can be shipped to a semiconductor packaging manufacturing plant. At the packaging manufacturing plant, all that is required is to attach the semiconductor die and passive components (step 208), package the die and passive components (step 210), and cut the wafer (step 224) to form a complete semiconductor device 150. This greatly simplifies the processing steps required at a semiconductor packaging manufacturing plant compared to the traditional manufacturing steps of a semiconductor packaging manufacturing plant.

[0038] In an embodiment, multi-module interposer 102 provides an efficient wafer-level solution for providing a communication path between a semiconductor die within a semiconductor device and a host device to which the device may be mounted. Interposer 102 also provides a high degree of flexibility because any of a variety of semiconductor package configurations may be electrically coupled to interposer 102 at the wafer level. In addition, interposer 102 provides a fan-out signal path so that electrical connections (e.g., solder balls 148) are not limited to the size of the semiconductor die used within semiconductor device 150.

[0039] Furthermore, compared to conventional substrates, the multi-module interposer 102 can be made very thin so as to occupy a very small height in the overall semiconductor device 150. As described above, in an embodiment, the final thickness of the wafer 100 can be, for example, 30 μm, and the RDL can have a thickness of about 20 μm to provide a final thickness of the interposer 102 of about 50 μm. It should be understood that the thickness of the interposer 102 can be more or less than in other embodiments.

[0040] In summary, an example of the present technology relates to a semiconductor wafer comprising: a plurality of multi-module interposers, each of the plurality of multi-module interposers comprising: a plurality of bonding pads on a first surface of each multi-module interposer; a redistribution layer comprising a plurality of contact pads on a second surface of each multi-module interposer opposite to the first surface, the plurality of contact pads on the second surface being electrically coupled to selected bonding pads among the plurality of bonding pads on the first surface; and a plurality of semiconductor dies mounted on and electrically coupled to the plurality of multi-module interposers, different multi-module interposers of the plurality of multi-module interposers receiving different configurations of the plurality of semiconductor dies.

[0041] In another example, the technology of the present invention relates to a semiconductor wafer, comprising: a plurality of multi-module interposers, each of the plurality of multi-module interposers comprising: a plurality of bonding pads on a first surface of the multi-module interposer, at least one dielectric layer, a redistribution layer formed on the dielectric layer, the redistribution layer comprising a plurality of contact pads on a second surface of the multi-module interposer opposite to the first surface, and electrical interconnects and through-holes formed in at least one dielectric layer for electrically interconnecting a plurality of die pads with a plurality of contact pads; and a plurality of semiconductor dies mounted to the plurality of multi-module interposers, one or more of the plurality of semiconductor dies being electrically coupled to the plurality of bonding pads on the multi-module interposer.

[0042] In another example, the technology of the present invention relates to multiple semiconductor devices, each semiconductor device comprising: a multi-module interposer, including: a plurality of bonding pads on a first surface of the multi-module interposer, a redistribution layer including a plurality of contact pads located on a second surface of the multi-module interposer opposite to the first surface, the plurality of contact pads on the second surface being electrically coupled to selected bonding pads among the plurality of bonding pads on the first surface; and one or more dies mounted on the multi-module interposer and electrically coupled to the plurality of bonding pads; wherein the plurality of semiconductor devices are configured to accommodate different configurations of the one or more semiconductor dies.

[0043] In another example, the technology of the present invention relates to a method for manufacturing a semiconductor wafer, comprising: (a) forming a plurality of bonding pads on a first surface of the semiconductor wafer; (b) forming a plurality of through-holes electrically coupled to the plurality of bonding pads, extending away from the first surface of the semiconductor wafer toward a second surface of the semiconductor wafer opposite to the first surface; (c) thinning the wafer at the second surface so that the plurality of through-holes are exposed at the second surface; and (d) attaching a redistribution layer to the second surface of the wafer, the redistribution layer electrically redistributing the positions of the plurality of through-holes at the first surface of the redistribution layer to a plurality of contact pads at the second surface of the redistribution layer opposite to the first surface.

[0044] In another example, the technology of the present invention relates to a semiconductor wafer, comprising: an insertion device for transmitting electrical signals, comprising: a bonding pad device on a first surface of an interposer device for electrically coupling to a semiconductor die, a redistribution device including a contact pad device, the redistribution device being used to redistribute the position of the bonding pad device to a different position of the contact pad device; and a plurality of semiconductor dies mounted on the interposer device and electrically coupled to the interposer device, different interposer devices accommodating different configurations of the plurality of semiconductor dies.

[0045] The above detailed description of the present invention has been presented for the purpose of illustration and description. It is not intended to be exhaustive or to limit the present invention to the precise form disclosed. Many modifications and variations are possible in light of the above teachings. The described embodiments are selected to best illustrate the principles of the present invention and its practical application, so that other technicians in the field can best use the present invention and various embodiments with various modifications suitable for the specific purposes contemplated. The scope of the present invention is intended to be limited by the appended claims.

Claims

1. A semiconductor wafer, comprising: A plurality of multi-module interposers, each of the plurality of multi-module interposers comprising: a plurality of bonding pads on a first surface of each multi-module interposer, a redistribution layer comprising a plurality of contact pads on a second surface of each multi-module interposer opposite the first surface, the plurality of contact pads on the second surface being electrically coupled to selected ones of the plurality of bonding pads on the first surface; and A plurality of semiconductor dies are mounted on and electrically coupled to the plurality of multi-module interposers, and different multi-module interposers of the plurality of multi-module interposers have bonding pads of different configurations of the plurality of bonding pads for accommodating different configurations of the plurality of semiconductor dies.

2. The semiconductor wafer of claim 1 , wherein the different configurations of the plurality of semiconductor dies include at least two of: i) a group of wire-bonded semiconductor dies, ii) flip-chip semiconductor dies, and iii) a group of semiconductor dies electrically connected to each other through through-silicon vias.

3. The semiconductor wafer according to claim 1, wherein the differently configured bonding pads include a first pattern of bonding pads on the first surface of a first multi-module interposer of the plurality of multi-module interposers, a second pattern of bonding pads on the first surface of a second multi-module interposer of the plurality of multi-module interposers that is different from the first pattern of bonding pads, and a third pattern of bonding pads on the first surface of a third multi-module interposer of the plurality of multi-module interposers that is different from the first pattern and the second pattern of bonding pads.

4. The semiconductor wafer of claim 3 , wherein the first pattern of the bonding pad is configured to accommodate a first configuration of the plurality of semiconductor dies, the second pattern of the bonding pad is configured to accommodate a second configuration of the plurality of semiconductor dies that is different from the first configuration, and the third pattern of the bonding pad is configured to accommodate a third configuration of the plurality of semiconductor dies that is different from the first configuration and the second configuration.

5. The semiconductor wafer of claim 1 , wherein each of the multi-module interposers comprises a fan-out signal path, wherein an area of ​​the second surface of each multi-module interposer having the plurality of contact pads is greater than an area of ​​the first surface of each multi-module interposer having the plurality of bonding pads. 6 . The semiconductor wafer of claim 1 , further comprising a plurality of solder balls attached to the plurality of contact pads on the second surface of each of the plurality of multi-module interposers.

7. A semiconductor wafer, comprising: A plurality of multi-module interposers, each of the plurality of multi-module interposers comprising: a plurality of bonding pads on a first surface of the multi-module interposer, at least one dielectric layer, a redistribution layer formed on the dielectric layer, the redistribution layer comprising a plurality of contact pads on a second surface of the multi-module interposer opposite the first surface, and electrical interconnects and vias formed in the at least one dielectric layer for electrically interconnecting the plurality of bond pads with the plurality of contact pads; and a plurality of semiconductor dies mounted to the plurality of multi-module interposers, one or more of the plurality of semiconductor dies being electrically coupled to the plurality of bond pads on the multi-module interposer, and Different ones of the plurality of multi-module interposers have different configurations of bonding pads of the plurality of bonding pads for receiving different configurations of the plurality of semiconductor dies.

8. The semiconductor wafer of claim 7, wherein the different configurations of the plurality of semiconductor dies include at least two of: i) a group of wire-bonded semiconductor dies, ii) flip-chip semiconductor dies, and iii) a group of semiconductor dies electrically connected to each other through through-silicon vias.

9. The semiconductor wafer of claim 7 , wherein the plurality of bonding pads of a first multi-module interposer among the plurality of multi-module interposers configured to receive a first configuration of the plurality of semiconductor dies have a pattern different from the plurality of bonding pads on a second multi-module interposer of the plurality of multi-module interposers, and the plurality of multi-module interposers are configured to receive a second configuration of the plurality of semiconductor dies that is different from the first configuration of the plurality of semiconductor dies.

10. The semiconductor wafer of claim 7 , wherein the plurality of bonding pads of a first multi-module interposer among the plurality of multi-module interposers configured to receive a first configuration of the plurality of semiconductor dies have the same pattern as the plurality of bonding pads on a second multi-module interposer of the plurality of multi-module interposers, the plurality of multi-module interposers being configured to receive a second configuration of the plurality of semiconductor dies that is different from the first configuration of the plurality of semiconductor dies.

11. The semiconductor wafer of claim 7 , wherein each of the multi-module interposers comprises a fan-out signal path, wherein an area of ​​the second surface of each multi-module interposer having the plurality of contact pads is greater than an area of ​​the first surface of each multi-module interposer having the plurality of bonding pads.

12. A plurality of semiconductor devices, each semiconductor device being from the same semiconductor wafer and comprising: A multi-module interposer comprising: a plurality of bonding pads on a first surface of the multi-module interposer, a redistribution layer comprising a plurality of contact pads on a second surface of the multi-module interposer opposite the first surface, the plurality of contact pads on the second surface being electrically coupled to selected ones of the plurality of bonding pads on the first surface; and one or more dies mounted on the multi-module interposer and electrically coupled to the plurality of bond pads; Wherein the plurality of semiconductor devices from the same semiconductor wafer include different patterns of bond pads of the plurality of bond pads, wherein the different patterns of bond pads are configured to receive different configurations of the one or more semiconductor dies.

13. The plurality of semiconductor devices of claim 12, wherein the different configurations of the one or more semiconductor dies include at least two of: i) a group of wire-bonded semiconductor dies, ii) flip-chip semiconductor dies, and iii) a group of semiconductor dies electrically connected to each other via through-silicon vias. 14 . The plurality of semiconductor devices of claim 12 , wherein a first pattern of the different patterns of bond pads is configured to receive one or more wire-bonded semiconductor dies. 15 . The plurality of semiconductor devices of claim 12 , wherein a second of the different patterns of bond pads is configured to receive a flip chip bonded semiconductor die. 16 . The plurality of semiconductor devices of claim 12 , wherein a third of the different patterns of bond pads is configured to receive a group of semiconductor dies electrically connected to each other through through silicon vias.

17. A method for manufacturing a semiconductor wafer, comprising: (a) forming a plurality of bonding pads on a first surface of the semiconductor wafer; (b) forming a plurality of through-holes electrically coupled to the plurality of bonding pads, extending away from the first surface of the semiconductor wafer toward a second surface of the semiconductor wafer opposite to the first surface; (c) thinning the wafer at the second surface so that the plurality of through holes are exposed at the second surface; (d) attaching a redistribution layer to the second surface of the wafer, the redistribution layer electrically redistributing locations of the plurality of vias at the first surface of the redistribution layer to a plurality of contact pads at a second surface of the redistribution layer opposite the first surface; (e) attaching a plurality of semiconductor dies to the first surface of the wafer, and electrically coupling the plurality of semiconductor dies to the plurality of bond pads; (f) packaging the plurality of semiconductor dies on the first surface of the wafer; (g) cutting the wafer into discrete semiconductor devices, each semiconductor device comprising one or more of the plurality of semiconductor dies, and wherein the plurality of semiconductor devices from the wafer comprise different patterns of bonding pads of the plurality of bonding pads, wherein the different patterns of bonding pads are configured to accommodate different configurations of one or more of the plurality of semiconductor dies.

18. The method of claim 17, wherein the step (e) of attaching a plurality of semiconductor dies is performed before the step (c) of thinning the wafer.

19. The method of claim 17, wherein the step (e) of attaching a plurality of semiconductor dies is performed after the step (d) of attaching a redistribution layer.

20. The method of claim 17, wherein the step (e) of attaching a plurality of semiconductor dies is performed after the step (d) of attaching a redistribution layer.

21. A semiconductor wafer, comprising: An interposer device for transmitting electrical signals, comprising: bond pad means on a first surface of said interposer means for being electrically coupled to a semiconductor die, comprising redistribution means for contact pad means, the redistribution means being adapted to redistribute the position of the bonding pad means to a different position of the contact pad means; and A plurality of semiconductor dies are mounted on and electrically coupled to the interposer device, different interposer devices having different configurations of bond pads of the bond pad device for receiving different configurations of the plurality of semiconductor dies.

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