Substrate inspection method, substrate inspection system and control device

Abstract

The present invention provides a substrate inspection method, a substrate inspection system and a control device. The substrate inspection method includes: a step of constructing a correlation model representing the relationship between the pixel value in the captured image of the substrate and the feature quantity of the film of the substrate based on the measurement result of the feature quantity of the film of the model forming substrate and the captured image for model forming generated by capturing the model forming substrate; a step of capturing a target substrate for feature quantity acquisition to generate a captured image, and calculating the estimated feature quantity of the film of the target substrate for feature quantity acquisition based on the captured image and the correlation model; a step of calculating the statistical value of the estimated feature quantity calculated for a plurality of target substrates for feature quantity acquisition; and a step of calculating the compensation amount of the estimated feature quantity based on the measurement result of the feature quantity of the film and the statistical value of the estimated feature quantity, wherein the film is a film for which the same processing as the film for which the estimated feature quantity is calculated is performed on the compensation calculation substrate. The present invention can simply and accurately acquire the feature quantity of the film of the substrate.

Description

Technical Field

[0001] The invention relates to a substrate inspection method, a substrate inspection system and a control device. Background Art

[0002] Patent document 1 discloses a film thickness measurement method, which measures the film thickness of a film formed on a substrate. The film thickness measurement method includes a film thickness coordinate acquisition process, a pixel value extraction process, a correlation data generation process, and a film thickness calculation process. The film thickness coordinate acquisition process acquires the film thickness measurement value obtained by pre-measuring a plurality of points on the measurement preparation wafer and each coordinate corresponding to the film thickness measurement value for a film with uneven thickness formed on a measurement preparation wafer. The pixel value extraction process extracts the pixel value of each coordinate obtained in the film thickness coordinate acquisition process from a preparation image obtained by pre-photographing the measurement preparation wafer with a camera device. The correlation data generation process generates correlation data between the pixel value extracted in each coordinate and the film thickness measurement value of each coordinate. The film thickness calculation process acquires a captured image by photographing the wafer to be measured with a camera device, and calculates the film thickness of the film formed on the wafer to be measured with a film thickness based on the pixel value and the correlation data of the captured image.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2015-215193 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] The technology of the present invention can easily and accurately acquire the characteristic quantity of a film formed on a substrate.

[0008] Technical solutions for solving technical problems

[0009] One aspect of the present invention is a substrate inspection method for inspecting a substrate, which includes: a step of constructing a correlation model representing the relationship between pixel values ​​in the captured image of the substrate and the characteristic quantities of the film formed on the substrate based on a measurement result of a characteristic quantity of a film formed on a model forming substrate measured by a measuring instrument and a model forming captured image generated by photographing the model forming substrate with a camera device of a first substrate processing system; a step of photographing a characteristic quantity acquisition object substrate with a camera device of a second substrate processing system to generate a captured image, and calculating an estimated characteristic quantity of the film formed on the characteristic quantity acquisition object substrate based on the captured image and the above-mentioned correlation model; a step of calculating a statistical value of the estimated characteristic quantity calculated for a plurality of the characteristic quantity acquisition object substrates; and a step of calculating a compensation value of the estimated characteristic quantity based on a measurement result of the characteristic quantity of the film measured by the measuring instrument and the statistical value of the estimated characteristic quantity, wherein the film is formed by performing the same processing as the formation processing of the film whose estimated characteristic quantity is calculated on the compensation calculation substrate with the above-mentioned second substrate processing system.

[0010] Effects of the Invention

[0011] According to the present invention, it is possible to easily and accurately acquire the characteristic quantity of a film formed on a substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 This is a diagram schematically showing the outline of the structure of the substrate inspection system according to the present embodiment.

[0013] Figure 2 It is a plan view schematically showing the structure of the first substrate processing system.

[0014] Figure 3 It is a schematic front view schematically showing the internal structure of the first substrate processing system.

[0015] Figure 4 It is a schematic rear view schematically showing the internal structure of the first substrate processing system.

[0016] Figure 5 It is a longitudinal sectional view schematically showing the structure of the inspection device.

[0017] Figure 6 It is a cross-sectional view schematically showing the structure of the inspection device.

[0018] Figure 7 It is used to illustrate Figure 1 A diagram showing an example of the processing flow and data flow in a substrate inspection system.

[0019] Figure 8 FIG. 1 is a diagram showing an example of a captured image of a wafer W generated when a correlation model is constructed.

[0020] Description of Reference Numerals

[0021] 1 Substrate inspection system

[0022] 10 First substrate processing system

[0023] 20 Second substrate processing system

[0024] 30 Overall Control Department

[0025] 120 Development processing device

[0026] 121 Lower layer film forming device

[0027] 122 Intermediate layer film forming device

[0028] 123 Resist coating device

[0029] 130 Heat treatment device

[0030] 210 Camera Device

[0031] 250 Transport Processing Control Department

[0032] 251 Camera Control Unit

[0033] W chip. DETAILED DESCRIPTION

[0034] In the manufacturing process of semiconductor devices, etc., a predetermined process is performed on a semiconductor wafer (hereinafter sometimes referred to as a "wafer") to form a resist pattern. The above-mentioned predetermined process refers to, for example, a resist coating process for supplying a resist liquid to the wafer to form a resist film, an exposure process for exposing the resist film to a predetermined pattern, a PEB process for promoting a chemical reaction in the resist film after exposure, and a development process for developing the resist film after exposure. Then, after the resist pattern formation process, etching of a processing object film is performed using the resist pattern as a mask to form a predetermined pattern on the processing object film. In addition, when forming the resist pattern, films other than the resist film, such as a base film of the resist film, are also formed on the wafer.

[0035] In order to form a resist pattern of a desired shape and appropriately transfer the pattern to a processing target film, it is necessary to manage the thickness of each film formed on the wafer when forming the resist pattern.

[0036] Therefore, when forming a resist pattern, the thickness of each of the above-mentioned films is measured. As a method for measuring film thickness, as described in Patent Document 1, there is a method for calculating the thickness of a film formed on a wafer based on a captured image obtained by capturing a wafer. In the film thickness measurement method disclosed in Patent Document 1, specifically, with respect to a film with uneven thickness formed on a wafer prepared for measurement, a film thickness measurement value obtained by pre-measuring a plurality of points on the wafer prepared for measurement and each coordinate corresponding to the film thickness measurement value are obtained. Next, the pixel value of each of the above-mentioned coordinates is extracted from the prepared captured image obtained by pre-capturing the wafer prepared for measurement by an imaging device. Next, correlation data of the pixel value extracted at each coordinate and the film thickness measurement value at each coordinate is generated. Then, a captured image is obtained by capturing a wafer to be measured for film thickness by an imaging device, and based on the pixel value and correlation data of the captured image, the film thickness of the film formed on the wafer to be measured for film thickness is calculated.

[0037] However, in semiconductor manufacturing plants, there are cases where multiple substrate processing systems are introduced to perform the same processing on wafers between systems. In this case, an imaging device is set in each substrate processing system, and the imaging device set in the system is used in each substrate processing system to calculate the thickness of the film formed by the above-mentioned same processing, for example, as in Patent Document 1. In addition, in this case, since the state of the imaging device in each substrate processing system is different, when the above-mentioned related data is made common data between substrate processing systems, there is a situation where the film thickness cannot be accurately calculated. Therefore, in the prior art, the above-mentioned related data is generated for each substrate processing system. However, it is very troublesome to generate the above-mentioned related data for each substrate processing system. For example, in the case where multiple substrate processing systems that perform the same processing are introduced at the same time, when the above-mentioned related data is generated for each substrate processing system, it is necessary to transport the wafers used for generating the related data from one substrate processing system to other substrate processing systems.

[0038] Therefore, the technology of the present invention can easily and accurately acquire characteristic quantities such as the thickness of a film formed on a substrate.

[0039] Hereinafter, the substrate inspection method, substrate inspection system and control device of the present embodiment will be described with reference to the accompanying drawings. In addition, in this specification and the accompanying drawings, the same reference numerals are given to elements having substantially the same functional structure, thereby omitting repeated descriptions.

[0040] Figure 1 1 is a schematic diagram showing the structure of the substrate inspection system of the present embodiment. As shown in the figure, the substrate inspection system 1 has two substrate processing systems 10 and 20. In addition, for ease of description, the number of substrate processing systems in the substrate inspection system 1 is set to two, but it can also be three or more.

[0041] In the first and second substrate processing systems 10, 20, the wafer W is subjected to a photolithography process or the like.

[0042] Figure 2 It is a plan view schematically showing the structure of the first substrate processing system 10 . Figure 3 and Figure 4 The diagrams are respectively a front view and a rear view schematically showing the internal structure of the first substrate processing system 10 .

[0043] like Figure 2 As shown, the first substrate processing system 10 includes: a cassette station 100 for carrying in and out a cassette C containing a plurality of wafers W; and a processing station 101 having a plurality of processing devices for performing predetermined processing on the wafers W. The first substrate processing system 10 has a structure in which the cassette station 100, the processing station 101, and an interface station 103 for transferring the wafers W between the processing station 101 and an exposure device 102 adjacent thereto are connected in an integrated manner.

[0044] A cassette mounting table 110 is provided at the cassette station 100 . A plurality of cassette mounting plates 111 are provided at the cassette mounting table 110 , and the cassette mounting plates 111 are provided with cassettes C when the cassettes C are carried in and out of the substrate processing system 10 .

[0045] The cassette station 100 is provided with a wafer conveying device 113 that is freely movable on a conveying path 112 extending in the X direction. The wafer conveying device 113 is also freely movable in the up-down direction and around the vertical axis (θ direction), and can convey wafers W between the cassettes C on each cassette mounting plate 111 and a delivery device of the third block G3 of the processing station 101 described later.

[0046] The processing station 101 is provided with a plurality of blocks, for example, four blocks, namely, the first block G1 to the fourth block G4, including various devices. Figure 2 A first block G1 is provided on the negative side of the X direction of the processing station 101. Figure 2 A second block G2 is provided on the positive X-direction side of the processing station 101 (on the upper side of the drawing). Figure 2 The third block G3 is provided on the negative Y direction side of the processing station 101. Figure 2 A fourth block G4 is provided on the positive Y direction side.

[0047] In the first block G1, a processing device, i.e., a liquid processing device, is arranged to process the wafer W using a processing liquid. Specifically, in the first block G1, Figure 3As shown, as the liquid processing apparatus, for example, a developing processing apparatus 120, a lower layer film forming apparatus 121, an intermediate layer film forming apparatus 122, and a resist coating apparatus 123 are arranged in the following order from the bottom.

[0048] The development processing device 120 performs development processing on the wafer W. Specifically, the development processing device 120 supplies a developer onto the resist film of the wafer W to form a resist pattern.

[0049] The lower film forming device 121 forms a lower film which is a base film of the resist film on the wafer W. Specifically, the lower film forming device 121 applies a lower film material as a material for forming the lower film on the wafer W to form the lower film. The lower film is, for example, a SOC (spin on carbon) film.

[0050] The intermediate film forming device 122 forms an intermediate film on the lower film of the wafer W and at a position below the resist film. Specifically, the intermediate film forming device 122 forms the intermediate film by applying an intermediate film material, which is a material for forming the intermediate film, on the lower film of the wafer W. The intermediate film is, for example, a SOG (spin on glass) film.

[0051] The resist coating device 123 forms a resist film by coating a resist liquid on the wafer W. Specifically, the resist coating device 123 coats the resist liquid on the intermediate layer film of the wafer W to form a resist film.

[0052] For example, three developing processing devices 120, three lower film forming devices 121, three intermediate film forming devices 122, and three resist coating devices 123 are arranged side by side in the horizontal direction. The number and arrangement of the developing processing devices 120, three lower film forming devices 121, three intermediate film forming devices 122, and three resist coating devices 123 can be arbitrarily selected.

[0053] In the developing processing device 120, the lower film forming device 121, the intermediate film forming device 122, and the resist coating device 123, a predetermined processing liquid is applied to the wafer W by, for example, a spin coating method. In the spin coating method, for example, the processing liquid is released from a coating nozzle onto the wafer W and the wafer W is rotated so that the processing liquid is spread on the surface of the wafer W.

[0054] In the second block G2, heat treatment devices 130 are arranged side by side in the vertical direction and the horizontal direction. The heat treatment devices 130 are processing devices that perform heat treatment such as heating or cooling the wafer W using a heating plate or a cooling plate on which the wafer W is mounted. The number and arrangement of these heat treatment devices 130 can be selected arbitrarily. In addition, as for the heat treatment devices 130, known devices can be used.

[0055] In the third block G3, a plurality of handover devices 140, 141, 142, 143, 144 are sequentially arranged from the bottom, and inspection devices 145, 146, 147 are sequentially arranged thereon. In addition, in the fourth block G4, a plurality of handover devices 150, 151, 152 are sequentially arranged from the bottom, and inspection devices 153, 154 are arranged thereon.

[0056] Here, the structure of the inspection device 145 is described.

[0057] Figure 5 and Figure 6 They are respectively a longitudinal sectional view and a cross sectional view schematically showing the structure of the inspection device 145 .

[0058] Inspection device 145 Figure 5 and Figure 6 The housing 200 is shown. A mounting table 201 for mounting a wafer W is provided in the housing 200. The mounting table 201 can be rotated and stopped by a rotation drive unit 202 such as a motor. Figure 6 in the negative direction of the X direction) to the other end side ( Figure 6 The mounting table 201 and the rotation driving unit 202 are provided on the guide rail 203 and can be moved along the guide rail 203 by the driving device 204.

[0059] On the other end side in the housing 200 ( Figure 6 An imaging device 210 is provided on the side surface (the positive direction side of the X direction). As for the imaging device 210, for example, a wide-angle CCD camera can be used.

[0060] A half mirror 211 is provided near the center of the upper part of the housing 200. The half mirror 211 is provided at a position opposite to the camera device 210 and in a state of being tilted upward by 45 degrees from the mirror surface to the vertically downward direction in the direction facing the camera device 210. An illumination device 212 is provided above the half mirror 211. The half mirror 211 and the illumination device 212 are fixed to the upper surface inside the housing 200. The illumination light from the illumination device 212 is irradiated downward through the half mirror 211. Therefore, the light reflected by the object located below the illumination device 212 is further reflected by the half mirror 211 and is taken into the camera device 210. That is, the camera device 210 can capture an object located in the area irradiated by the illumination device 212.

[0061] In addition, the structures of the inspection devices 146, 147, 153, and 154 are the same as the structure of the inspection device 145 described above.

[0062] Back to use Figure 2 to Figure 4A first substrate processing system 10 is described.

[0063] like Figure 2 As shown, a wafer transfer area D is formed in an area surrounded by the first block G1 to the fourth block G4. A plurality of wafer transfer devices 160 are arranged in the wafer transfer area D, and have a transfer arm 160a that can move freely in the Y direction, the X direction, the θ direction, and the up and down direction, for example. The wafer transfer device 160 moves in the wafer transfer area D and can transfer the wafer W to a desired device in the surrounding first block G1, the second block G2, the third block G3, and the fourth block G4.

[0064] In addition, in the wafer transport area D, as shown in FIG. Figure 4 As shown, a shuttle transport device 170 is provided for linearly transporting the wafer W between the third block G3 and the fourth block G4.

[0065] The shuttle device 170 is, for example, Figure 4 The shuttle device 170 can move in the Y direction while supporting the wafer W, and can transport the wafer W between the delivery device 142 of the third block G3 and the delivery device 152 of the fourth block G4.

[0066] like Figure 2 As shown, a wafer conveying device 180 is provided adjacent to the positive direction side of the third block G3 in the X direction. The wafer conveying device 180 has a conveying arm 180a that can move freely in the X direction, the θ direction, and the vertical direction. The wafer conveying device 180 can move up and down while supporting the wafer W, and convey the wafer W to each delivery device in the third block G3.

[0067] The interface station 103 is provided with a wafer conveying device 190 and a delivery device 191. The wafer conveying device 190 has a conveying arm 190a that can move freely in the Y direction, the θ direction, and the vertical direction, for example. The wafer conveying device 190 supports the wafer W with the conveying arm 190a, for example, and can convey the wafer W between the delivery devices in the fourth block G4, the delivery device 191, and the exposure device 102.

[0068] In addition, the first substrate processing system 10 is provided with a transport processing control section 250 and an imaging control section 251 .

[0069] The transport processing control unit 250 (hereinafter sometimes referred to as the "main control unit 250") is, for example, a computer having a CPU and a memory, and has a program storage unit (not shown). In the program storage unit, a program for controlling the operation of the drive system of the various processing devices or the transport device mentioned above to perform various processes on the wafer W is stored. In addition, the above-mentioned program may be a program recorded in a computer-readable storage medium, and installed from the storage medium to the main control unit 250. A part or all of the program may also be implemented by dedicated hardware (circuit board).

[0070] The imaging control unit 251 is a computer including a CPU or a memory, for example, similarly to the main control unit 250, and has a program storage unit (not shown). The program storage unit stores programs for controlling the operation of the imaging device or the drive system of each inspection device and controlling the processing related to the inspection device. In addition, the above-mentioned program may be a program recorded in a computer-readable storage medium, or a program installed in the imaging control unit 251 from the storage medium. Part or all of the program may also be implemented by dedicated hardware (circuit board).

[0071] Back to use Figure 1 A description of a substrate inspection system 1.

[0072] The structure of the second substrate processing system 20 included in the substrate inspection system 1 is the same as the structure of the first substrate processing system 10 described above.

[0073] The substrate inspection system 1 further includes an overall control unit 30 as a control device.

[0074] The overall control unit 30 is, for example, a computer including a CPU and a memory, and has a program storage unit (not shown). The program storage unit stores a program for constructing a correlation model described later and a program for calculating a compensation amount described later. In addition, the above program may be a program recorded in a computer-readable storage medium, and installed from the storage medium to the overall control unit 30. A part or all of the program may be implemented by dedicated hardware (circuit board).

[0075] Furthermore, the overall control unit 30 includes a data storage unit 301 that accumulates captured images of the wafer W acquired as a result of the imaging device 210 capturing the wafer W. The data storage unit 301 is composed of a computer-readable storage device.

[0076] In the above substrate inspection system 1, the substrate processing systems 10 and 20 perform a process of forming a resist pattern on a wafer W, and estimate and obtain the film feature quantity such as the thickness of each film such as the lower film formed in the process and the line width of the formed resist pattern. In addition, in the substrate processing systems 10 and 20, the above-mentioned film feature quantity is calculated based on the pixel value of the captured image of the wafer W and the correlation model, and the above-mentioned pixel value and correlation model are obtained based on the result of photographing the wafer W formed with the film using a camera device corresponding to the film. The correlation model is a model that represents the correspondence between the feature quantity of the film and the pixel value of the captured image of the wafer W formed with the film. More specifically, for example, the feature quantity of the film is a feature quantity represented by an n (n is an integer greater than 1) order function with the pixel value of the captured image of the wafer W as a variable. This correlation model called a "calibration curve" is pre-constructed before the process of forming the resist pattern is performed. Furthermore, the correlation model can be pre-constructed for each type of feature quantity of the film, specifically, for example, the thickness of the underlying film, the thickness of the intermediate film, the thickness of the resist film, and the line width of the resist pattern.

[0077] In the prior art, each correlation model is constructed separately in the first substrate processing system 10 and the second substrate processing system 20. However, it takes time to construct each model separately. In this regard, the present inventors conducted an in-depth study and found that the change of the characteristic quantity of the film relative to the change of the pixel value of the captured image of the wafer W shows the same trend between the substrate processing systems. Specifically, when a model is used as a correlation model in which the characteristic quantity of the film is represented by an n (n is an integer greater than 1)-order function with the pixel value of the captured image of the wafer W as a variable, the difference between the substrate processing systems is the constant term of the above n-order function, that is, the slice portion.

[0078] Therefore, in the substrate inspection system 1, each correlation model is pre-constructed by the overall control unit 30 based on the captured image of the wafer W obtained in the first substrate processing system 10. And, each constructed correlation model is used for the estimation of the characteristic quantity of the film in both the first substrate processing system 10 and the second substrate processing system 20. However, the first substrate processing system 10 and the second substrate processing system 20 use the estimated characteristic quantity of the film in different ways. Specifically, for example, in the first substrate processing system 10, after the estimation using the correlation model starts, the processing conditions of various processes are corrected based on the estimated characteristic quantity of the film. On the contrary, with respect to the second substrate processing system 20, for example, after the estimation of the characteristic quantity of the film using the correlation model starts, the compensation amount described later is calculated at a predetermined time. And, in the second substrate processing system 20, the estimated characteristic quantity of the film is corrected by the above-mentioned compensation amount, and the processing conditions of various processes are corrected based on the corrected estimated characteristic quantity of the film.

[0079] A specific description will be given below.

[0080] Figure 7 This is a diagram for explaining an example of a processing flow and a data flow in the substrate inspection system 1. Figure 8 FIG. 1 is a diagram showing an example of a captured image of a wafer W generated when a correlation model is constructed.

[0081] (1. Related model building process)

[0082] like Figure 7 As shown, in the substrate inspection system 1, before the formation of the resist pattern is carried out in mass production in each substrate processing system 10, 20, a relevant model is pre-constructed for each type of characteristic quantity of the film based on the shooting results of the camera device 210 of the first substrate processing system 10 (step S1).

[0083] (1.1. Initial state shooting process)

[0084] In the correlation model building process, first, in the first substrate processing system 10, a chip W for correlation model building (hereinafter referred to as "model building chip W") is photographed before various films such as an underlying film are formed (i.e., in an initial state).

[0085] Specifically, for example, under the control of the main control unit 250, the model building chip W stored in the box C placed on the box loading table 110 is taken out and transported to the inspection device 145. Next, under the control of the camera control unit 251, the surface of the model building chip W is photographed by the camera device 210 of the inspection device 145. Then, based on the photographing result of the camera device 210, the camera control unit 251 obtains a photographed image of the model building chip W in the initial state. For example, the model building chip W in the photographing result of the camera device 210 is divided into 437 areas, and the average value of the pixel values ​​of R (red), G (green), and B (blue) is calculated in each area. Then, for each area (pixel), a table is generated that associates the coordinates of the area with the average value of the above-mentioned pixel value, that is, the average value of the RGB data. In addition, the table is corrected according to the optical system in the inspection device 145, etc. Based on the corrected table, it is possible to Figure 8 The image Im shown is obtained as a captured image of the model building wafer W in the initial state (hereinafter referred to as the "initial state captured image"). Figure 8 The image shown is called a "captured image".

[0086] The initial state captured image, specifically, the table for generating the captured image (hereinafter referred to as “captured image generation table”) is sent from the imaging control unit 251 to the overall control unit 30 and stored in the data storage unit 301 .

[0087] The model construction wafer W is, for example, a production wafer used when forming a resist pattern in a mass production process of semiconductor devices, that is, in a mass production area, and has a pattern formed on the wafer surface.

[0088] (1.2. Lower layer film forming step)

[0089] After the initial state photographing step, in the first substrate processing system 10, a lower film is formed on the model construction wafer W. Specifically, under the control of the main control unit 250, the model construction wafer W is transported to the lower film forming device 121, and the lower film is formed on the model construction wafer W under the preset coating processing conditions.

[0090] (1.3. Lower film baking process)

[0091] Afterwards, the lower film is heated and baked for the model building wafer W. Specifically, under the control of the main control unit 250, the model building wafer W is transported to the heat treatment device 130 for the lower film baking treatment, and the lower film baking treatment is performed under the preset heat treatment conditions.

[0092] (1.4. Shooting process after the lower film is formed)

[0093] Next, the model-building wafer W on which the lower layer film is formed is photographed.

[0094] Specifically, for example, under the control of the main control unit 250, the model construction wafer W is transported to the inspection device 153. Next, under the control of the imaging control unit 251, the imaging device 210 of the inspection device 153 captures the surface of the model construction wafer W. Then, similarly to the initial state imaging step, the imaging control unit 251 acquires a captured image of the model construction wafer W after the lower layer film is formed based on the imaging result of the imaging device 210 (hereinafter referred to as "captured image after the lower layer film is formed"). Specifically, a captured image generation table is acquired.

[0095] The acquired captured images (specifically, the captured image generation table) are transmitted from the imaging control unit 251 to the overall control unit 30 , and stored in the data storage unit 301 .

[0096] (1.5. Actual measurement process of the film thickness of the lower film)

[0097] Following the post-underlayer film formation photographing step, the thickness of the underlayer film formed on the model construction wafer W is measured using a film thickness measuring mechanism (not shown) provided as a measuring device outside the first substrate processing system 10 .

[0098] Specifically, for example, first, under the control of the main control unit 250, the model construction wafer W is returned to the cassette C placed on the cassette stage 110. Then, the cassette is moved under the film thickness measurement mechanism and the model construction wafer W is taken out, and the film thickness of the lower film is measured in the film thickness measurement mechanism. For example, the model construction wafer W is divided into 437 regions, which is the same number as the divided regions of the captured image, and in each region, the film thickness of the lower film on the region is measured.

[0099] The measurement result is input to the overall control unit 30. In addition, as the film thickness measurement means, for example, a film thickness meter using a reflection spectrum method or the like can be used.

[0100] (1.6. Step of constructing a model related to the thickness of the lower film)

[0101] After the actual film thickness measurement process, a relevant model of the thickness of the lower film is constructed based on the measurement results of the thickness of the lower film formed on the model building chip W measured by the film thickness measurement mechanism and the captured image of the model building chip W after the lower film is formed.

[0102] Specifically, in the overall control unit 30, a correlation model of the film thickness of the lower film is constructed based on the measurement results of each of the above-mentioned 437 areas of the chip W used for model construction measured by the film thickness measuring mechanism, and the pixel values ​​in the image captured after the lower film is formed. The model represents the correspondence between the film thickness of the lower film and the pixel values ​​in the captured image of the chip W on which the lower film is formed.

[0103] Furthermore, when constructing the correlation model of the film thickness of the lower layer film, in order to remove the influence of the initial state captured image, the pixel values ​​in the captured image after the lower layer film is formed may be corrected based on the pixel values ​​in the initial state captured image.

[0104] (1.7. Intermediate layer film forming step)

[0105] In addition, after the actual film thickness measurement step, an intermediate layer film is formed on the lower layer film of the model construction wafer W in the first substrate processing system 10 .

[0106] Specifically, the box C containing the model building chip W is sent back to the first substrate processing system 10, and under the control of the main control unit 250, the model building chip W is taken out from the box C and transported to the intermediate layer film forming device 122, where an intermediate layer film is formed on the lower layer film of the model building chip W under pre-set coating processing conditions.

[0107] (1.8. Intermediate layer film baking process)

[0108] Afterwards, the model building wafer W is subjected to a heating treatment of the intermediate film, i.e., an intermediate film baking treatment. Specifically, under the control of the main control unit 250, the model building wafer W is transported to the heat treatment device 130 for the intermediate film baking treatment, and the intermediate film baking treatment is performed under a preset heat treatment condition.

[0109] (1.9. Photographing process after formation of intermediate layer film)

[0110] Next, the model construction wafer W on which the intermediate layer film is formed is photographed.

[0111] Specifically, for example, under the control of the main control unit 250, the model construction wafer W is transported to the inspection device 146. Next, under the control of the imaging control unit 251, the surface of the model construction wafer W is photographed by the imaging device 210 of the inspection device 146. Then, similarly to the initial state imaging step, based on the imaging result of the imaging device 210, the imaging control unit 251 acquires a captured image of the model construction wafer W after the intermediate layer film is formed (hereinafter referred to as "captured image after the intermediate layer film is formed"), and specifically, acquires a captured image generation table.

[0112] The acquired captured images (specifically, the captured image generation table) are transmitted from the imaging control unit 251 to the overall control unit 30 , and stored in the data storage unit 301 .

[0113] (1.10. Actual measurement process of the film thickness of the intermediate layer)

[0114] Next, in the intermediate layer film post-formation photographing step, similarly to the actual film thickness measurement step of the lower film, the thickness of the intermediate layer film formed on the model construction wafer W is measured by a film thickness measuring mechanism (not shown) provided outside the first substrate processing system 10. In addition, the thickness of the intermediate layer film can also be calculated based on the measurement result of the film thickness measuring mechanism here and the measurement result of the thickness of the lower film.

[0115] The measurement result of the thickness of the intermediate layer film is input to the overall control unit 30 .

[0116] (1.11. Model building process related to thickness of intermediate layer film)

[0117] After the above-mentioned actual film thickness measurement process, similar to the process of constructing a related model of the thickness of the lower film, a related model of the thickness of the intermediate layer film is constructed based on the measurement results of the thickness of the intermediate layer film formed on the model construction chip W measured by a film thickness measurement mechanism, and the captured image of the model construction chip W after the intermediate layer film is formed.

[0118] (1.12. Resist film forming step)

[0119] In addition, after the actual film thickness measurement step of the intermediate layer film, a resist film is formed on the intermediate layer film of the model construction wafer W in the first substrate processing system 10 .

[0120] Specifically, the box C containing the model building chip W is sent back to the first substrate processing system 10, and under the control of the main control unit 250, the model building chip W is taken out from the box C and transported to the anti-etching agent coating device 123, and an anti-etching film is formed on the intermediate layer film of the model building chip W under pre-set coating processing conditions.

[0121] (1.13.PAB process)

[0122] After that, the model building wafer W is subjected to a pre-exposure heat treatment of the resist film, namely a pre-applied bake (PAB) treatment. Specifically, under the control of the main control unit 250, the model building wafer W is transported to the heat treatment device 130 for PAB treatment and subjected to PAB treatment under preset heat treatment conditions.

[0123] (1.14. Photographing step after resist film formation)

[0124] Next, the model construction wafer W on which the resist film is formed is photographed.

[0125] Specifically, for example, under the control of the main control unit 250, the model construction wafer W is transported to the inspection device 153. Next, under the control of the imaging control unit 251, the surface of the model construction wafer W is photographed by the imaging device 210 of the inspection device 153. Then, similarly to the initial state imaging step, the imaging control unit 251 obtains a captured image of the model construction wafer W after the resist film is formed (hereinafter referred to as a "captured image after the resist film is formed") based on the imaging result of the imaging device 210. Specifically, a captured image generation table is obtained.

[0126] The acquired captured images (specifically, the captured image generation table) are transmitted from the imaging control unit 251 to the overall control unit 30 , and stored in the data storage unit 301 .

[0127] (1.15. Actual measurement process of resist film thickness)

[0128] Following the resist film formation post-photographing step, similarly to the step of actually measuring the film thickness of the underlying film, the thickness of the resist film formed on the model construction wafer W is measured by a film thickness measuring mechanism (not shown) provided outside the first substrate processing system 10. The thickness of the resist film can also be calculated based on the measurement result of the film thickness measuring mechanism here, the measurement result of the thickness of the underlying film, and the measurement result of the thickness of the intermediate film.

[0129] The measurement result of the thickness of the resist film is input to the overall control unit 30 .

[0130] (1.16. Resist film thickness correlation model construction step)

[0131] After the above-mentioned actual film thickness measurement process, similar to the process of constructing a related model for the thickness of the underlying film, a related model for the thickness of the resist film is constructed based on the measurement results of the thickness of the resist film formed on the model construction chip W measured by a film thickness measurement mechanism, and a captured image of the model construction chip W after the resist film is formed.

[0132] (1.17. Exposure process)

[0133] In addition, after the resist film thickness actual measurement step, the first substrate processing system 10 performs exposure processing on the model construction wafer W.

[0134] Specifically, the box C containing the model building chip W is sent back to the first substrate processing system 10, and under the control of the main control unit 250, the model building chip W is taken out from the box C and transported to the exposure device 102, and the chip W is exposed under preset exposure conditions to expose the resist film into a preset pattern.

[0135] (1.18.PEB process)

[0136] After that, the model building wafer W is subjected to a post-exposure heating treatment of the resist film, i.e., a post-exposure baking (PEB) treatment. Specifically, under the control of the main control unit 250, the model building wafer W is transported to the heat treatment device 130 for PEB treatment, and the PEB treatment is performed under preset heat treatment conditions.

[0137] (1.19. Development process)

[0138] Next, the model construction wafer W is subjected to development processing. Specifically, under the control of the main control unit 250, the model construction wafer is transported to the development processing device 120, and is subjected to development processing under preset processing conditions to form a resist pattern on the wafer W.

[0139] (1.20. Photographing process after pattern formation)

[0140] Next, the model construction wafer W on which the resist film is formed is photographed.

[0141] Specifically, for example, under the control of the main control unit 250, the model construction wafer is transported to the inspection device 147. Next, under the control of the imaging control unit 251, the surface of the model construction wafer W is photographed by the imaging device 210 of the inspection device 147. Then, similarly to the initial state imaging step, the imaging control unit 251 obtains a captured image of the model construction wafer W after the resist pattern is formed (hereinafter referred to as a "captured image after pattern formation") based on the imaging result of the imaging device 210. Specifically, a captured image generation table is obtained.

[0142] The acquired captured images (specifically, the captured image generation table) are transmitted from the imaging control unit 251 to the overall control unit 30 , and stored in the data storage unit 301 .

[0143] (1.21. Actual measurement process of line width of resist pattern)

[0144] Following the post-patterning imaging step, the line width of the resist pattern formed on the model construction wafer W is measured by a line width measuring mechanism (not shown) provided outside the first substrate processing system 10 .

[0145] Specifically, for example, first, under the control of the main control unit 250, the model construction wafer W is returned to the cassette C placed on the cassette stage 110. Next, the cassette is moved under the line width measurement mechanism and the model construction wafer W is taken out, and the line width of the resist pattern is measured in the line width measurement mechanism. For example, the model construction wafer W is divided into 437 areas, which is the same number as the divided areas of the captured image, and in each area, the line width of the resist pattern on the area is measured.

[0146] The measurement result is input to the overall control unit 30. In addition, as the line width measurement mechanism, for example, SEM (SEM: Scanning Electron Microscope) can be used.

[0147] (1.22. Resist pattern line width correlation model construction step)

[0148] After the above-mentioned line width actual measurement process, similar to the process of constructing a related model of the thickness of the underlying film, a related model of the resist pattern is constructed based on the measurement results of the line width of the resist pattern formed on the model construction chip W measured by a line width measurement mechanism, and the captured image of the model construction chip W after the resist pattern is formed.

[0149] In addition, various correlation models constructed in the correlation model construction process of step S1 as described above are sent to the first substrate processing system 10 and the second substrate processing system 20.

[0150] (2. Mass production and calculation process of estimated characteristic quantities)

[0151] In the correlation model construction process of step S1, when the construction of the previous correlation model is completed, the resist pattern formation process is performed in the first substrate processing system 10 in a mass production manner, and the estimated feature value of each film is calculated based on the constructed correlation model (step S2).

[0152] (2.1. Resist pattern mass production forming process)

[0153] In the process of step S2, specifically, as a resist pattern forming process, the wafer W is subjected to the same processes as the above-mentioned 1.2. lower film forming process, 1.3. lower film baking process, 1.7. intermediate film forming process, 1.8. intermediate film baking process, 1.12. resist film forming process, 1.13. PAB process, 1.17. exposure process, 1.18. PEB process and 1.19. development process. Thus, after the lower film, intermediate film and resist film are stacked on the wafer W, a resist pattern is formed. In mass production, the above-mentioned resist pattern forming process is performed for each of a large number of wafers W.

[0154] (2.2. Estimated feature quantity calculation process)

[0155] In addition, in the process of step S2, when the resist pattern is formed, the same processes as the above-mentioned 1.1. initial state photographing process, 1.4. photographing process after the lower film is formed, 1.9. photographing process after the intermediate film is formed, 1.14. photographing process after the resist film is formed, and 1.20. photographing process after the pattern is formed are also performed on each wafer W. Thus, in mass production, the initial state photographing image, the photographing image after the lower film is formed, the photographing image after the intermediate film is formed, the photographing image after the resist film is formed, and the photographing image after the pattern is formed are obtained for each wafer W. Then, for each wafer W, the imaging control unit 251 of the first substrate processing system 10 calculates the estimated value of the thickness of the lower film based on the photographing image after the lower film is formed in mass production and the correlation model of the thickness of the lower film obtained in step S1. Specifically, for each wafer W, based on the pixel values ​​of each divided area of ​​the image captured after the formation of the lower film in mass production and the above-mentioned correlation model, the estimated value of the thickness of the lower film is calculated for each divided area of ​​the wafer W, in other words, the estimated feature quantity of the lower film is calculated. Similarly, in the process of step S2, for each wafer W used in mass production, other estimated feature quantities are calculated, specifically, the estimated value of the thickness of the intermediate film, the estimated value of the thickness of the resist film, and the estimated value of the line width of the resist pattern are calculated.

[0156] In addition, the estimated feature quantity of each film calculated for each wafer W is stored in a storage unit (not shown) of the imaging control unit 251 .

[0157] In addition, since the feature amount is calculated and acquired for the wafer W used in mass production as described above, it can be called a wafer W to be acquired with respect to the feature amount.

[0158] (3. Processing condition correction step)

[0159] In the first substrate processing system 10, after the process of step S2 is started, at a preset time, the main control unit 250 corrects the processing conditions for processing the wafer W in the substrate processing system 10 based on the calculated estimated feature values ​​of each film (step S3). The preset time is when maintenance is performed or when a preset time has passed after the process of step S2 is started.

[0160] In this process, for example, for a specific divided area within the chip W, a statistical value (such as an average value, etc.) of the estimated value of the film thickness of the lower layer film during mass production is calculated, and based on the calculation result, the processing conditions for the formation of the lower layer film (for example, the chip rotation speed in the lower layer film formation process, the chip temperature in the lower layer film baking process) are corrected.

[0161] In the first substrate processing system 10, the above-mentioned step S2 and step S3 are repeatedly performed.

[0162] (4. Mass production and calculation process of estimated characteristic quantities)

[0163] Similar to the first substrate processing system 10, in the second substrate processing system 20, after the correlation model construction process of step S1, the resist pattern formation process is carried out in mass production, and the estimated feature quantity of each film is calculated based on the correlation model (step S4). Specifically, in the second substrate processing system 20, the same processes as the above-mentioned 2.1. resist pattern mass production formation process and 2.2. estimated feature quantity calculation process are carried out, and when calculating the estimated feature quantity of each film, the same correlation model as the correlation model used in the first substrate processing system 10 is used.

[0164] However, in the second substrate processing system 20 , the calculated estimated feature amount of each film is not used as it is for correcting the processing conditions for processing the wafer W in the second substrate processing system 20 .

[0165] In addition, in the second substrate processing system 20 , the estimated feature values ​​of each film calculated for each wafer W are not only stored in a storage unit (not shown) of the imaging control unit 251 of the system 20 , but also transmitted to the overall control unit 30 .

[0166] (5. Compensation amount calculation process)

[0167] In the second substrate processing system 20, after step S4 starts, the compensation amount of the estimated characteristic amount is calculated for each type of the characteristic amount of the film at a preset time. The preset time is during maintenance or when a preset time has passed since the start of the process of step S2.

[0168] (5.1. Lower layer film forming step)

[0169] In the compensation amount calculation step, first, for example, a lower film is formed on a wafer W for compensation amount calculation (hereinafter referred to as "compensation wafer W") in the second substrate processing system 20. Specifically, under the control of the main control unit 250, the compensation wafer W stored in the cassette C mounted on the cassette mounting table 110 is taken out and transported to the lower film forming device 121. Then, the lower film is formed on the compensation wafer W under the same coating processing conditions as those for forming the lower film whose estimated characteristic amount is calculated.

[0170] In addition, the compensation wafer W is, for example, a bare wafer.

[0171] (5.2. Lower film baking process)

[0172] After that, the compensation wafer W is subjected to a lower film baking process in the second substrate processing system 20. Specifically, under the control of the main control unit 250, the compensation wafer W is transported to the heat treatment device 130 for the lower film baking process, and the lower film baking process is performed under the same heat treatment conditions as those for the process when forming the lower film whose estimated feature quantity is calculated.

[0173] (5.3. Actual measurement process of the film thickness of the lower film)

[0174] After the lower film baking step, the thickness of the lower film formed on the compensation wafer W is measured by a film thickness measuring mechanism (not shown) provided as a measuring device outside the second substrate processing system 20. Specifically, for example, the same process as the above-mentioned 1.5. lower film thickness actual measurement step is performed, the compensation wafer W is divided into 437 areas equal to the number of divided areas of the captured image, and the film thickness of the lower film on each area is measured. The measurement result is input to the overall control unit 30.

[0175] (5.4. Compensation Amount Calculation Step for Estimated Feature Amount of Lower Film)

[0176] After the actual film thickness measurement process, the compensation amount of the estimated characteristic quantity of the lower film is calculated. Specifically, first, in step S4, the overall control unit 30 is used to calculate the statistical value of the estimated characteristic quantity of the lower film calculated for multiple wafers W. The above-mentioned statistical value refers to an average value, for example. In addition, the overall control unit 30 is used to calculate the compensation amount (+20nm) of the estimated characteristic quantity of the lower film based on the statistical value of the estimated characteristic quantity of the lower film, that is, the statistical value of the estimated value of the thickness of the lower film (for example, 80nm), and the thickness of the lower film measured by the film thickness measurement mechanism (for example, 100nm). More specifically, for example, the compensation amount of the estimated characteristic quantity of the lower film is calculated based on the overall average of the in-plane average value of the estimated characteristic quantity of the lower film and the in-plane average of the characteristic quantity of the thickness of the lower film measured by the film thickness measurement mechanism.

[0177] (5.5. Intermediate layer film forming step)

[0178] In the second substrate processing system 20, the intermediate layer film is formed directly on the compensation wafer W, not on the lower layer film of the compensation wafer W. Specifically, under the control of the main control unit 250, the compensation wafer W stored in the cassette C mounted on the cassette mounting table 110 is taken out and transported to the intermediate layer film forming device 122. Then, the intermediate layer film is formed on the compensation wafer W under the same coating processing conditions as those for forming the intermediate layer film whose estimated feature amount is calculated.

[0179] (5.6. Intermediate layer film baking process)

[0180] After that, the compensation wafer W is subjected to an intermediate film baking process in the second substrate processing system 20. Specifically, under the control of the main control unit 250, the compensation wafer W is transported to the heat treatment device 130 for the intermediate film baking process, and the intermediate film baking process is performed under the same heat treatment conditions as those for forming the intermediate film whose estimated feature quantity is calculated.

[0181] (5.7. Actual measurement process of the thickness of the intermediate layer film)

[0182] After the intermediate layer film baking step, the thickness of the intermediate layer film formed on the compensation wafer W is measured by a film thickness measuring mechanism (not shown) provided as a measuring device outside the second substrate processing system 20. Specifically, for example, the same process as the above-mentioned 1.10. intermediate layer film thickness actual measurement step is performed. The measurement result is input to the overall control unit 30.

[0183] (5.8. Compensation Amount Calculation Step for Estimated Feature Amount of Intermediate Layer Film)

[0184] After the actual measurement step of the film thickness of the intermediate layer film, the compensation amount of the estimated characteristic amount of the intermediate layer film is calculated by the overall control unit 30. Specifically, the same processing as in the step of calculating the compensation amount of the lower layer film in 5.4 is performed.

[0185] (5.9. Resist film forming step)

[0186] Then, in the second substrate processing system 20, a resist film is directly formed on the compensation wafer W, similarly to the intermediate layer film. Specifically, under the control of the main control unit 250, the compensation wafer W stored in the cassette C mounted on the cassette mounting table 110 is taken out and transported to the resist coating device 123. Then, a resist film is formed on the compensation wafer W under the same coating processing conditions as those for forming the resist film whose estimated feature quantity is calculated.

[0187] (5.10. Resist film baking process)

[0188] Thereafter, the compensation wafer W is subjected to PAB treatment in the second substrate processing system 20. Specifically, under the control of the main control unit 250, the compensation wafer W is transported to the heat treatment apparatus 130 for PAB treatment, and the PAB treatment is performed under the same heat treatment conditions as those for forming the resist film whose estimated feature quantity is calculated.

[0189] (5.11. Actual measurement process of resist film thickness)

[0190] After the resist film baking step, the thickness of the resist film formed on the compensation wafer W is measured by a film thickness measuring mechanism (not shown) provided as a measuring device outside the second substrate processing system 20. Specifically, for example, the same process as the above-mentioned 1.16. resist film thickness actual measurement step is performed. The measurement result is input to the overall control unit 30.

[0191] (5.12. Compensation Amount Calculation Step of Estimated Feature Quantity of Resist Film)

[0192] After the resist film thickness actual measurement step, the compensation amount of the estimated characteristic amount of the resist film is calculated by the overall control unit 30. Specifically, the same processing as in 5.4. the compensation amount calculation step of the lower layer film is performed.

[0193] (5.13. Actual measurement process of line width of resist pattern)

[0194] Then, the line width of the resist pattern formed on the wafer W whose estimated feature value of the resist pattern is calculated is measured by a line width measuring mechanism (not shown) such as a SEM provided outside the second substrate processing system 20 .

[0195] Specifically, for example, in mass production in step S4, the wafer W sent back to the cassette C after the resist pattern is formed is taken out and sent to the line width measurement mechanism to measure the line width of the resist pattern of the wafer W. For example, the wafer W is divided into 437 areas, which is the same number as the divided areas of the captured image, and in each area, the line width of the resist pattern on the area is measured.

[0196] The measurement result is input to the overall control unit 30 .

[0197] (5.14. Compensation Amount Calculation Step of Resist Pattern Line Width)

[0198] After the line width actual measurement step, the compensation amount of the estimated characteristic amount of the resist pattern is calculated by the overall control unit 30. Specifically, based on the measurement result of the line width of the resist pattern, the same processing as in 5.4. the compensation amount calculation step of the lower layer film is performed.

[0199] In addition, a plurality of processing devices are provided for each type in the second substrate processing system 20. When calculating the compensation amount of various characteristic quantities as described above, it is preferable that the processing device that processes the wafer W for which the characteristic quantity is actually measured and the processing device that processes the wafer W for which the estimated characteristic quantity used for calculating the compensation amount is obtained are the same.

[0200] Furthermore, in the compensation amount calculation process of step S5 , the various compensation amounts generated in the above-described manner are sent to the second substrate processing system 20 .

[0201] (6. Correction process of estimated feature quantity)

[0202] After the compensation amount calculation process in step S5, in the second substrate processing system 20, the estimated feature amount of each film calculated is corrected based on the compensation amount by the imaging control unit 251 (step S6). Specifically, for example, in step S4, the estimated feature amount of the film calculated for each wafer W and stored in the storage unit of the imaging control unit 251 is added with the compensation amount for the estimated feature amount, and the estimated feature amount of the film is stored in the above storage unit as the corrected estimated feature amount of the film. In addition, the corrected estimated feature amount of the film may be sent to the overall control unit 30.

[0203] (7. Processing Condition Correction Step)

[0204] In the second substrate processing system 20, after the correction process of the estimated feature quantity in step S6, the main control unit 250 corrects the processing conditions for processing the wafer W in the substrate processing system 20 based on the corrected estimated feature quantity of each film (step S7). Specifically, based on the corrected estimated feature quantity of each film, the same correction as in step S3 is performed.

[0205] Regarding the second substrate processing system 20, the above-mentioned steps S4 to S7 are repeatedly performed. However, in the calculation of the estimated feature amount in the second and subsequent steps S4, the compensation amount calculated in the past step S5 can be used.

[0206] As described above, the substrate inspection method of the present embodiment includes: a step of constructing a correlation model representing the relationship between the pixel value in the captured image of the wafer W and the feature quantity of the film formed on the wafer W for model formation based on the measurement result of the feature quantity of the film formed on the wafer W for model formation measured by a measuring instrument and the captured image for model formation generated by capturing the wafer W for model formation by the camera device 210 of the first substrate processing system 10; a step of generating a captured image by capturing the wafer for feature quantity acquisition by the camera device 210 of the second substrate processing system 20, and calculating the estimated feature quantity of the film formed on the wafer W for feature quantity acquisition based on the captured image and the above-mentioned feature quantity model; a step of calculating the statistical value of the estimated feature quantity calculated for a plurality of wafers W for feature quantity acquisition; and a step of calculating the compensation amount of the estimated feature quantity based on the measurement result of the feature quantity of the film measured by the measuring instrument and the statistical value of the above-mentioned estimated feature quantity, wherein the film is a film formed by performing the same processing as the formation processing of the film for which the estimated feature quantity is calculated on the wafer W for compensation calculation by the second substrate processing system 20. That is, in the second substrate processing system 20, the feature quantity of the film formed on the wafer W to be acquired as the feature quantity is calculated using the correlation model constructed based on the result of photographing the model construction wafer W by the camera device 210 of the first substrate processing system 10. Therefore, it is not necessary to construct a correlation model based on the result of photographing the model construction wafer W by the camera device 210 of the second substrate processing system 20. Therefore, the feature quantity can be simply calculated. In addition, in the present embodiment, as described above, the compensation amount is calculated for the estimated feature quantity calculated using the above-mentioned correlation model in the second substrate processing system 20. Therefore, the estimated feature quantity can be corrected using the compensation amount, and an accurate feature quantity can be obtained.

[0207] In the above, when calculating the statistical value of the estimated characteristic quantity in order to calculate the compensation amount of the estimated characteristic quantity of each film, the value of the calculated estimated characteristic quantity is used for calculating the statistical value regardless of the value. Alternatively, the statistical value may be calculated after excluding the estimated characteristic quantity outside a preset range from the calculated estimated characteristic quantity. The preset range refers to, for example, a range in which the upper 5% and the lower 5% of the calculated estimated characteristic quantity are excluded.

[0208] Furthermore, in the second substrate processing system 20, during mass production, it is possible to perform defect inspection to determine whether a wafer W has defects using the inspection devices 145, 146, 147, 153, and 154 through the camera control unit 251. For example, it is possible to determine whether a defect exists in the wafer W based on a pattern-formed image obtained based on the image capturing result of the camera 210 of the inspection device 147. Furthermore, when calculating the statistical value of the above-mentioned estimated feature quantity, the estimated feature quantity of the wafer W in which a defect is detected in the defect inspection may be excluded. Thus, the influence of the wafer W that originally has an abnormality and the wafer W that has an abnormality during processing can be prevented, so that an appropriate compensation amount can be calculated, and the processing conditions in the second substrate processing system 20 can be appropriately corrected.

[0209] In addition, when calculating the statistical value of the estimated feature quantity, the estimated feature quantity of the wafer W whose pixel value in the initial state captured image during mass production is outside the preset range may be excluded. The preset range is, for example, within the range of ±30% of the in-plane average of the pixel value of the initial state captured image acquired when the correlation model is constructed. In this way, the influence of the wafer W that originally has an abnormality can be prevented, so that an appropriate compensation amount can be calculated, and the processing conditions in the second substrate processing system 20 can be appropriately corrected.

[0210] Furthermore, it is also possible to notify when the compensation amount calculated in step S5 is outside a preset range. The above-mentioned preset range refers to, for example, a range in which the absolute value of the compensation amount is below the target characteristic amount. By making such a notification, the user can be made aware of the abnormality of the compensation amount. In addition, when the compensation amount calculated in step S5 is outside a preset range, the compensation amount is not applied to the correction of the estimated characteristic amount in step S6. Thus, the correction of the processing conditions in the second substrate processing system 20 can be appropriately performed.

[0211] In addition, the processing performed by the overall control unit 30 may be performed by the imaging control unit 251 of the substrate processing systems 10 and 20 , and further, the processing performed by the imaging control unit 251 of the substrate processing systems 10 and 20 may be performed by the overall control unit 30 .

[0212] In the above example, when correcting the estimated feature quantity, the compensation amount of the estimated feature quantity is added, but when performing the addition operation, the compensation amount may be multiplied by a predetermined ratio less than 1 before the addition operation is performed. In this way, it is possible to prevent the estimated feature quantity from changing significantly before and after the correction.

[0213] In the above description, only the second substrate processing system 20 performs calculation of the compensation amount of the estimated feature amount, correction of the estimated feature amount based on the calculated compensation amount, etc., but the first substrate processing system 10 may also perform these operations.

[0214] In the above example, the correlation model is constructed by measuring the production wafer itself. The film thickness correlation model may be constructed by using the film thickness of a bare wafer that has been subjected to a coating and baking process under the same conditions as during production, instead of the production wafer.

[0215] In addition, regarding the line width, a correlation model may be constructed using a measurement value measured after the next process (etching, etc.) of producing the wafer, and the line width after the next process may be estimated based on the correlation model.

[0216] In the above example, a bare wafer is used as the compensation wafer W, but a production wafer W may also be used.

[0217] In the above example, RGB data of the captured image is used as the pixel value related to the feature quantity of the film, but the pixel value may be the pixel value of all colors of R, G, and B, or the pixel value of any one color or two colors. In addition, the pixel value may be the pixel value of a color other than R, G, and B.

[0218] The embodiments disclosed in the present invention are all illustrative and should not be considered as limiting. The above embodiments may be omitted, replaced, and modified in various ways without departing from the scope and spirit of the appended claims.

[0219] In addition, the following configurations also belong to the technical scope of the present invention.

[0220] (1) A substrate inspection method for inspecting a substrate, comprising:

[0221] A step of constructing a correlation model representing a relationship between a pixel value in the photographed image of the substrate and the feature quantity of the film formed on the substrate based on a measurement result of a feature quantity of a film formed on the substrate for model formation measured by a measuring device and a captured image for model formation generated by capturing the substrate for model formation by a camera device of the first substrate processing system;

[0222] The step of photographing a feature quantity acquisition target substrate with an imaging device of a second substrate processing system to generate a photographed image, and calculating an estimated feature quantity of a film formed on the feature quantity acquisition target substrate based on the photographed image and the above-mentioned correlation model;

[0223] a step of calculating a statistical value of the estimated feature quantity calculated for a plurality of the feature quantity acquisition target substrates; and

[0224] A step of calculating a compensation amount for the above-mentioned inferred characteristic amount based on a measurement result of a characteristic amount of the film measured by a measuring instrument and a statistical value of the above-mentioned inferred characteristic amount, wherein the above-mentioned film is formed by subjecting a compensation calculation substrate to the same processing as the formation processing of the film whose inferred characteristic amount is calculated by the above-mentioned second substrate processing system.

[0225] In the above (1), in the second substrate processing system, the feature quantity of the film formed on the wafer W to be acquired as the feature quantity is calculated using the correlation model constructed based on the result of photographing the model-building substrate by the camera device of the first substrate processing system. Therefore, it is not necessary to construct a correlation model based on the result of photographing the model-building substrate by the camera device of the second substrate processing system. Therefore, the feature quantity can be simply calculated. In addition, in the above (1), as described above, the compensation amount is calculated for the estimated feature quantity calculated using the correlation model in the second substrate processing system. Therefore, the compensation amount can be used to correct the estimated feature quantity, and an accurate feature quantity can be acquired.

[0226] (2) The substrate inspection method described in (1) above includes the step of correcting the estimated feature quantity calculated in the step of calculating the estimated feature quantity of the film based on the compensation amount.

[0227] (3) In the substrate inspection method described in (2) above, the corrected estimated feature quantity is used to adjust substrate processing conditions in the second substrate processing system.

[0228] (4) In the substrate inspection method described in any one of (1) to (3) above, the characteristic quantity of the film is the film thickness or the line width of the film.

[0229] (5) In the substrate inspection method described in any one of (1) to (4) above, in the step of calculating the statistical value of the inferred feature quantity, the inferred feature quantity calculated in the step of calculating the inferred feature quantity that is outside a predetermined range is excluded, and then the statistical value is calculated.

[0230] (6) In the substrate inspection method described in any one of (1) to (5) above, in the step of calculating the statistical value of the inferred feature quantity, the statistical value is calculated after excluding the inferred feature quantity of the object substrate obtained based on the feature quantity in which defects are detected in the defect inspection of the captured image of the object substrate obtained by the feature quantity, from the inferred feature quantity calculated in the step of calculating the inferred feature quantity.

[0231] (7) A substrate inspection system for inspecting a substrate, comprising:

[0232] A first substrate processing system and a second substrate processing system having an imaging device for imaging the substrate and a processing device for processing the substrate; and

[0233] Control Department,

[0234] The control unit is configured to perform the following processing:

[0235] generating a captured image for model formation based on the result of photographing the model formation substrate by the imaging device of the first substrate processing system,

[0236] Based on the measurement result of the characteristic quantity of the film formed on the above-mentioned model formation substrate measured by the measuring instrument and the above-mentioned model formation captured image, a correlation model representing the relationship between the pixel value in the captured image of the substrate and the characteristic quantity of the film formed on the substrate is constructed,

[0237] photographing the feature acquisition target substrate with the above-mentioned imaging device of the above-mentioned second substrate processing system to generate a photographed image, and calculating the estimated feature quantity of the film formed on the above-mentioned feature acquisition target substrate based on the photographed image and the above-mentioned correlation model,

[0238] calculating a statistical value of the estimated feature quantity calculated for a plurality of the feature quantity acquisition target substrates,

[0239] Based on the measurement results of the characteristic quantities of the film measured by the measuring instrument and the statistical value of the above-mentioned inferred characteristic quantities, the compensation quantity of the above-mentioned inferred characteristic quantities is calculated, wherein the above-mentioned film is formed by using the above-mentioned second substrate processing system to perform the same processing as the formation processing of the film whose above-mentioned inferred characteristic quantities are calculated on the substrate for compensation calculation.

[0240] (8) A control device for a substrate inspection system for inspecting a substrate, wherein:

[0241] The substrate inspection system includes a first substrate processing system and a second substrate processing system, wherein the first substrate processing system and the second substrate processing system have an imaging device for photographing the substrate and a processing device for processing the substrate.

[0242] The control device is configured to perform the following processing:

[0243] A correlation model representing the relationship between pixel values ​​in the captured image of the substrate and the feature quantity of the film formed on the substrate is constructed based on a measurement result of a feature quantity of a film formed on the substrate for model formation measured by a measuring instrument and a captured image for model formation generated by capturing the substrate for model formation by the imaging device of the first substrate processing system.

[0244] calculating a compensation amount of an estimated characteristic amount of a film formed on the characteristic amount acquisition target substrate, the estimated characteristic amount being calculated based on a pixel value of a captured image generated by capturing the characteristic amount acquisition target substrate using the camera device of the second substrate processing system and the correlation model,

[0245] Furthermore, when calculating the above-mentioned compensation amount, the above-mentioned compensation amount is calculated based on the measurement result of the characteristic quantity of the film measured by a measuring instrument and the statistical value of the above-mentioned inferred characteristic quantity calculated for multiple object substrates for obtaining the above-mentioned characteristic quantity, wherein the above-mentioned film is a film formed by using the above-mentioned second substrate processing system to perform the same processing as the formation processing of the film whose above-mentioned inferred characteristic quantity is calculated on the substrate for compensation calculation.

Claims

1. A substrate inspection method for inspecting a substrate, characterized in that: include: A step of constructing a correlation model representing a relationship between a pixel value in the photographed image of a substrate and a feature value of a film formed on the substrate based on a measurement result of a feature value of a film formed on the substrate for model formation measured by a measuring device and a captured image for model formation generated by capturing the substrate for model formation by a camera device of a first substrate processing system; The step of photographing a feature quantity acquisition target substrate with an imaging device of a second substrate processing system to generate a photographed image, and calculating an estimated feature quantity of a film formed on the feature quantity acquisition target substrate based on the photographed image and the correlation model; A step of calculating a statistical value of the estimated feature quantity calculated for a plurality of the feature quantity acquisition target substrates; as well as a step of calculating a compensation amount for the estimated characteristic amount based on a measurement result of a characteristic amount of a film measured by a measuring device and a statistical value of the estimated characteristic amount, wherein the film is formed by subjecting a compensation calculation substrate to the same processing as the film for which the estimated characteristic amount is calculated by the second substrate processing system, The characteristic quantity of the film is the film thickness or the line width of the film.

2. The substrate inspection method according to claim 1, characterized in that: The method further includes the step of correcting the estimated feature quantity calculated in the step of calculating the estimated feature quantity of the film based on the compensation amount.

3. The substrate inspection method according to claim 2, characterized in that: The corrected estimated feature quantity is used to adjust substrate processing conditions in the second substrate processing system.

4. The substrate inspection method according to any one of claims 1 to 3, characterized in that: In the step of calculating the statistical value of the estimated feature quantity, the statistical value is calculated after excluding the estimated feature quantities outside a preset range from among the estimated feature quantities calculated in the step of calculating the estimated feature quantity.

5. The substrate inspection method according to any one of claims 1 to 3, characterized in that: In the step of calculating the statistical value of the inferred feature quantity, the statistical value is calculated after excluding the inferred feature quantity of the object substrate obtained based on the feature quantity in which defects are detected in the defect inspection of the captured image of the object substrate from the inferred feature quantity calculated in the step of calculating the inferred feature quantity.

6. A substrate inspection system for inspecting a substrate, characterized in that: include: A first substrate processing system and a second substrate processing system, which have an imaging device for photographing the substrate and a processing device for processing the substrate; as well as Control Department, The control unit is configured to perform the following processing: generating a captured image for model formation based on a result of photographing the model formation substrate by the imaging device of the first substrate processing system, Based on the measurement result of the characteristic quantity of the film formed on the substrate for model formation measured by the measuring instrument and the captured image for model formation, a correlation model representing the relationship between the pixel value in the captured image of the substrate and the characteristic quantity of the film formed on the substrate is constructed, photographing a feature acquisition target substrate with the imaging device of the second substrate processing system to generate a photographed image, and calculating an estimated feature value of a film formed on the feature acquisition target substrate based on the photographed image and the correlation model, calculating a statistical value of the estimated feature quantity calculated for a plurality of the feature quantity acquisition target sheets, calculating a compensation amount for the estimated characteristic amount based on a measurement result of a characteristic amount of a film measured by a measuring device and a statistical value of the estimated characteristic amount, wherein the film is formed by subjecting a compensation calculation substrate to the same processing as the film formation processing for which the estimated characteristic amount is calculated, using the second substrate processing system; The characteristic quantity of the film is the film thickness or the line width of the film.

7. A control device for a substrate inspection system for inspecting a substrate, characterized in that: The substrate inspection system includes a first substrate processing system and a second substrate processing system, wherein the first substrate processing system and the second substrate processing system have a camera device for photographing the substrate and a processing device for processing the substrate. The control device is configured to perform the following processing: Based on the measurement result of the characteristic quantity of the film formed on the model forming substrate measured by the measuring instrument and the model forming captured image generated by capturing the model forming substrate by the camera device of the first substrate processing system, a correlation model representing the relationship between the pixel value in the captured image of the substrate and the characteristic quantity of the film formed on the substrate is constructed, calculating a compensation amount of an estimated feature amount of a film formed on the feature amount acquisition target substrate, the estimated feature amount being calculated based on a pixel value of a captured image generated by capturing the feature amount acquisition target substrate with the camera device of the second substrate processing system and the correlation model, Furthermore, when calculating the compensation amount, the compensation amount is calculated based on a measurement result of a characteristic amount of a film measured by a measuring instrument and a statistical value of the estimated characteristic amount calculated for a plurality of characteristic amount acquisition object substrates, wherein the film is formed by subjecting a compensation calculation substrate to a process similar to a process for forming a film for which the estimated characteristic amount is calculated, using the second substrate processing system, The characteristic quantity of the film is the film thickness or the line width of the film.

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