Engineering gas supply device and substrate processing system equipped with the same

Abstract

The present invention provides an engineering gas supply device for oxide film etching, which is equipped with a device for supplying engineering gas to a substrate by dividing an edge area into a first area and a second area located outside the first area and dividing the second area into a plurality of small areas, and a substrate processing system equipped with the device. The engineering gas supply device includes: a shower head installed inside a chamber for performing an etching process, and equipped with a plurality of gas injection holes for the engineering gas to pass through; and a gas supply unit installed outside the chamber and connected to the shower head, and used to supply the engineering gas to the inside of the chamber through the gas injection holes; wherein the shower head includes: a central portion in the form of a flat plate; a middle portion in the form of an annular shape, which is arranged in a manner surrounding the central portion; a first edge portion in the form of an annular shape, which is arranged in a manner surrounding the middle portion; and a second edge portion in the form of an annular shape, which is arranged in a manner surrounding the first edge portion and is divided into a plurality of portions.

Description

Technical Field

[0001] The present invention relates to a device for supplying engineering gas and a system for processing a substrate using the device, and more particularly to a device for supplying engineering gas for etching an oxide film and a system for processing a substrate using the device. Background Art

[0002] The etching process used in manufacturing semiconductor devices includes a wet etching process and a dry etching process. Recently, semiconductor devices need to be miniaturized to be applicable to small electronic products, so dry etching processes that can achieve fine patterns are generally used.

[0003] Prior art literature

[0004] Patent Literature

[0005] Korean registered patent No. 10-1963859 (Announcement date: 2019.03.29.)

[0006] Patent content

[0007] Semiconductor device manufacturing equipment needs to be equipped with a shower head for supplying process gas inside a process chamber in order to perform a dry etching process.

[0008] In order to etch an oxide film on a substrate (wafer), the shower head divides the upper region of the substrate into a center zone, a middle zone, an edge zone, etc., and supplies a process gas.

[0009] However, since the pattern formed on the substrate is very fine, this may cause a problem of local dispersion asymmetry on the substrate.

[0010] The technical problem to be solved by the present invention is to provide an engineering gas supply device for oxide film etching, which supplies engineering gas to a substrate by dividing an edge area into a first area and a second area located outside the first area and dividing the second area into a plurality of small areas.

[0011] In addition, the technical problem to be solved by the present invention is to provide a substrate processing system equipped with an engineering gas supply device that supplies engineering gas to the substrate by dividing the edge area into a first area and a second area located outside the above-mentioned first area and dividing the second area into multiple small areas.

[0012] The subject of the present invention is not limited to the subject described in the above content, and other subjects not described will be further clearly understood by those skilled in the art from the following description.

[0013] In order to achieve the above-mentioned problems, one aspect of the process gas supply device applicable to the present invention includes: a shower head installed inside a chamber for performing an etching process and equipped with a plurality of gas injection holes through which the process gas can pass; and a gas supply unit installed outside the above-mentioned chamber and connected to the above-mentioned shower head, for supplying the above-mentioned process gas to the inside of the above-mentioned chamber through the above-mentioned gas injection holes; wherein the above-mentioned shower head includes: a central portion in the form of a flat plate; a middle portion in the form of an annular shape, which is configured in a manner surrounding the above-mentioned central portion; a first edge portion in the form of an annular shape, which is configured in a manner surrounding the above-mentioned middle portion; and a second edge portion in the form of an annular shape, which is configured in a manner surrounding the above-mentioned first edge portion and is divided into a plurality of portions.

[0014] The above-mentioned gas supply unit may include: a gas supply source for providing the above-mentioned engineering gas; a gas distributor for distributing the above-mentioned engineering gas; a gas supply pipeline for connecting the above-mentioned gas supply sources with the above-mentioned gas supply sources; and a gas distribution pipeline for respectively connecting the above-mentioned gas distributor with the above-mentioned central part, the above-mentioned gas distributor with the above-mentioned middle part, the above-mentioned gas distributor with the above-mentioned first edge part, and the above-mentioned gas distributor with the above-mentioned second edge part.

[0015] The number of the gas distribution pipelines for connecting the gas distributor and the second edge portion may be the same as the number of the second edge portions.

[0016] The engineering gas supply device may further include: a distribution control valve for controlling the flow of the engineering gas on the gas distribution pipeline; and a valve control unit for controlling the distribution control valve.

[0017] The width of the second edge portion may be greater than the width of the first edge portion.

[0018] In order to achieve the above-mentioned problems, one aspect of the substrate processing system applicable to the present invention includes: a chamber for performing an etching process; an electrostatic chuck installed inside the above-mentioned chamber and used to place a substrate; a shower head installed inside the chamber for performing the etching process in a manner facing the above-mentioned electrostatic chuck up and down, and equipped with a plurality of gas injection holes for allowing the process gas to pass through; and a gas supply unit installed outside the above-mentioned chamber and connected to the above-mentioned shower head, for supplying the above-mentioned process gas to the inside of the above-mentioned chamber through the above-mentioned gas injection holes; wherein the above-mentioned shower head includes: a central portion in the form of a flat plate; a middle portion in the form of an annular shape, which is configured in a manner surrounding the above-mentioned central portion; a first edge portion in the form of an annular shape, which is configured in a manner surrounding the above-mentioned middle portion; and a second edge portion in the form of an annular shape, which is configured in a manner surrounding the above-mentioned first edge portion and is divided into a plurality of portions; at this time, the above-mentioned shower head serves as an upper electrode, and the above-mentioned electrostatic chuck serves as a lower electrode.

[0019] In order to achieve the above-mentioned problems, another aspect of the substrate processing system applicable to the present invention includes: a chamber for performing an etching process; an electrostatic chuck installed inside the above-mentioned chamber and used to place a substrate; a shower head installed inside the chamber for performing the etching process in a manner facing the above-mentioned electrostatic chuck up and down, and equipped with a plurality of gas injection holes for allowing the process gas to pass through; a gas supply unit installed outside the above-mentioned chamber and connected to the above-mentioned shower head, and used to supply the above-mentioned process gas to the inside of the above-mentioned chamber through the above-mentioned gas injection holes; and an antenna installed on the upper part of the above-mentioned chamber and equipped with a spiral coil; wherein the above-mentioned shower head includes: a central portion in the form of a flat plate; a middle portion in the form of an annular shape, which is configured in a manner surrounding the above-mentioned central portion; a first edge portion in the form of an annular shape, which is configured in a manner surrounding the above-mentioned middle portion; and a second edge portion in the form of an annular shape, which is configured in a manner surrounding the above-mentioned first edge portion and is divided into a plurality of portions; at this time, the above-mentioned antenna serves as an upper electrode, and the above-mentioned electrostatic chuck serves as a lower electrode.

[0020] Details of other embodiments are included in the detailed description and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 This is a cross-sectional view showing a schematic structure of a substrate processing system to which one embodiment of the present invention is applied.

[0022] Figure 2 This is a cross-sectional view showing a schematic structure of a substrate processing system according to another embodiment of the present invention.

[0023] Figure 3 It is applicable to the Figure 1An exemplary diagram illustrating the structure of an embodiment of a shower head of a substrate processing system in FIG.

[0024] Figure 4a as well as Figure 4b It is applicable to the Figure 1 An exemplary diagram illustrating the structure of another embodiment of a shower head of a substrate processing system.

[0025] Figure 5 This is a conceptual diagram schematically illustrating the structure of a process gas supply device according to an embodiment of the present invention.

[0026] Figure 6 This is a conceptual diagram schematically illustrating the structure of a process gas supply device according to another embodiment of the present invention.

[0027]

Explanation of symbols

[0028] 100: Substrate processing system

[0029] 110: Chamber

[0030] 120: Support unit

[0031] 121: Base

[0032] 122: Electrostatic chuck

[0033] 123: Ring assembly

[0034] 123a: Focus ring

[0035] 123b: Insulation ring

[0036] 124: Gas supply department

[0037] 125: Heating components

[0038] 126: Cooling components

[0039] 131: Upper power supply

[0040] 132: Lower power supply

[0041] 140: Sprinkler head

[0042] 141: Gas injection hole

[0043] 150: Gas supply unit

[0044] 151: Gas supply source

[0045] 152: Gas supply pipeline

[0046] 153: Gas distributor

[0047] 154: Gas distribution pipeline

[0048] 210: Central Department

[0049] 220: Middle

[0050] 231: 1st edge

[0051] 232: Second edge

[0052] 300: Engineering gas supply device

[0053] 510: Helical antenna DETAILED DESCRIPTION

[0054] Next, the preferred embodiments applicable to the present invention will be described in detail in conjunction with the accompanying drawings. Through the following embodiments described in conjunction with the accompanying drawings, the advantages and features of the present invention and their implementation methods will be further clearly understood. However, the present invention is not limited to the embodiments disclosed in the following content, but can be implemented in a variety of different forms. These embodiments are only to be able to more completely disclose the present invention and to more completely introduce the scope of the present invention to personnel with general knowledge of the technical field to which the present invention belongs. The present invention should only be defined by the scope in the claims. Throughout the specification, the same reference symbols represent the same constituent elements.

[0055] When an element or layer is “on” or “on the upper side of” another element or layer, it includes not only the case where it is directly above the other element or layer, but also the case where other layers or other elements are included therebetween. On the contrary, when an element is “directly on” or “directly on the upper side of”, it means that there are no other elements or layers therebetween.

[0056] In order to more conveniently describe the relationship between an element or constituent element illustrated in the drawings and other elements or constituent elements, spatial relative position terms such as "below", "beneath", "lower", "above", and "upper" may be used. When the spatial relative position terms are used or acted in conjunction with the directions illustrated in the drawings, it should be understood that different directions between the elements are also included. For example, when the elements illustrated in the drawings are flipped, an element described as being "below" or "beneath" another element may be located "above" another element. Therefore, "above" as an exemplary term may include both the above and below directions. Elements can be arranged in different directions, so spatial relative terms can also be interpreted according to the arrangement direction.

[0057] Although it is possible to use terms such as the first and second terms to describe different elements, constituent elements and / or parts, the above elements, constituent elements and / or parts are not limited by the above terms. These terms are only used to distinguish one element, constituent element or part from other elements, constituent elements or parts. Therefore, the first element, the first constituent element or the first part mentioned in the following content may also be the second element, the second constituent element or the second part within the technical concept of the present invention.

[0058] All terms used in this specification are only used to illustrate the embodiments and are not intended to limit the present invention. In this specification, unless otherwise specified, singular statements also include plural meanings. The terms "comprises" and / or "comprising" used in this specification do not exclude the possibility of the existence or addition of one or more other constituent elements, steps, actions and / or elements other than the mentioned constituent elements, steps, actions and / or elements.

[0059] Unless otherwise defined, all terms (including technical and scientific terms) used in this specification have the meanings commonly understood by persons with general knowledge of the field to which the present invention belongs. In addition, unless otherwise clearly defined, commonly used terms defined in dictionaries should not be interpreted in an overly idealized or exaggerated manner.

[0060] Next, the embodiments applicable to the present invention will be described in detail in conjunction with the accompanying drawings. In the process of describing in conjunction with the accompanying drawings, regardless of the figure numbers, the same reference symbols will be assigned to the same or corresponding components, and repeated descriptions related thereto will be omitted.

[0061] With the fine patterning of semiconductor devices, the critical dimension (CD) distribution control technology of the edge zone of the substrate (wafer), especially the extreme edge zone (extreme edge zone) becomes more and more important.

[0062] In addition, the technical requirements for the control knob are becoming increasingly higher in response to the problem of localized asymmetric dispersion on the substrate.

[0063] The present invention is characterized in that a process gas for etching an oxide film is supplied onto a substrate by dividing an edge region into a first region and a second region located outside the first region and dividing the second region into a plurality of small regions.

[0064] The present invention can thereby finely control the local critical dimension (CD) gradient on the substrate, thereby achieving the effect of improving the critical dimension (CD) distribution in the edge region, especially in the extreme edge region.

[0065] Next, the present invention will be described in detail with reference to the accompanying drawings.

[0066] Figure 1 This is a cross-sectional view showing a schematic structure of a substrate processing system to which one embodiment of the present invention is applied.

[0067] like Figure 1 As shown, the substrate processing system 100 can include a chamber 110 , a support unit 120 , a plasma generating unit, a shower head 140 , and a gas supply unit 150 .

[0068] The substrate processing system 100 is a system for processing a substrate by dry etching the substrate. The substrate processing system 100 described above can etch an oxide film on a substrate. For example, the substrate processing system 100 can etch an oxide film on a substrate using plasma.

[0069] The chamber 110 provides a space for performing an etching process. The chamber 110 as described above can be equipped with an exhaust hole 111 at a lower portion thereof.

[0070] The exhaust hole 111 can be connected to an exhaust pipe 113 installed with a pump 112. The exhaust hole 111 as described above can exhaust the reaction byproducts generated during the etching process and the gas remaining inside the chamber 110 to the outside of the chamber 110 through the exhaust pipe 113. In the above case, the internal space of the chamber 110 can be decompressed to a specific pressure.

[0071] The chamber 110 may have an opening 114 formed on its side wall 130. The opening 114 serves as a passage for the substrate to enter and exit the chamber 110. The opening 114 may be opened and closed by a door assembly (not shown).

[0072] The door assembly may include an outer door (not shown), an inner door (not shown), and a connecting plate (not shown).

[0073] The outer door is provided on the outer wall of the chamber 110. The outer door as described above can be moved in the up and down direction by a door driver (not shown). The door driver can include a hydraulic cylinder and a motor.

[0074] The inner door is provided on the inner wall of the chamber 110 .

[0075] The connection plate extends from the inside to the outside of the chamber 110 through the opening 114. The outer door and the inner door can be fixedly connected to each other through the connection plate as described above.

[0076] The support unit 120 is installed in the lower area of ​​the chamber 110. The support unit 120 as described above can support the substrate by using electrostatic force. However, the present embodiment is not limited thereto. The support unit 120 can also support the substrate by various methods such as mechanical clamping and vacuum.

[0077] When the supporting unit 120 supports the substrate by using an electrostatic force, the supporting unit 120 may include a base 121 and an electrostatic chuck (ESC; Electro-Static Chuch) 122 .

[0078] The electrostatic chuck 122 supports the substrate placed on the electrostatic chuck 122 by using electrostatic force. The electrostatic chuck 122 as described above can be made of ceramic material and can be combined with the base 121 by being fixed to the base 121 .

[0079] The electrostatic chuck 122 can be installed in a manner that can be moved in the vertical direction inside the chamber 110 by a driving member (not shown). By forming the electrostatic chuck 122 in a manner that can be moved in the vertical direction as described above, the substrate can be positioned in a region showing a more uniform plasma distribution.

[0080] The ring assembly 123 is formed in a manner of surrounding the edge of the electrostatic chuck 122. The ring assembly 123 as described above is formed in a ring shape and can support the edge area of ​​the substrate.

[0081] The ring assembly 123 can include a focus ring 123 a and an insulating ring 123 b .

[0082] The focus ring 123a is formed inside the insulating ring 123b to surround the electrostatic chuck 122. The focus ring 123a is used to focus the plasma on the substrate. The focus ring 123a can be made of silicon.

[0083] The insulating ring 123 b is formed outside the focus ring 123 a so as to surround the focus ring 123 a. The insulating ring 123 b may be made of quartz.

[0084] In addition, the ring assembly 123 may further include an edge ring (not shown) formed closely to the edge of the focus ring 123 a. The edge ring is used to prevent the side of the electrostatic chuck 122 from being damaged by plasma.

[0085] The gas supply unit 124 supplies gas for removing foreign matter remaining on the upper portion of the ring assembly 123 or the edge portion of the electrostatic chuck 122. The gas supply unit 124 as described above can supply nitrogen (N 2 gas) as the gas for removing foreign matter. However, this embodiment is not limited thereto. The gas supply unit 124 can also provide other gases or cleaning agents.

[0086] The gas providing unit 124 may include a gas supply source 124 a and a gas supply pipeline 124 b .

[0087] The supply line 124b is formed between the ring assembly 123 and the electrostatic chuck 122. For example, the supply line 124b can be formed in a manner of connecting the focus ring 123a and the electrostatic chuck 122. However, the present embodiment is not limited thereto. The supply line 124b can also be formed inside the focus ring 123a, so as to be formed in a bent structure connecting the focus ring 123a and the electrostatic chuck 122.

[0088] The heating component 125 and the cooling component 126 are used to maintain the process temperature of the substrate when the etching process is performed inside the chamber 110. To this end, the heating component 125 and the cooling component 126 can be formed by a heating wire and a cooling pipe with a coolant flowing, respectively.

[0089] To maintain the process temperature of the substrate, the heating member 125 and the cooling member 126 can be installed inside the support unit 120. As an example, the heating member 125 can be installed inside the electrostatic chuck 122, and the cooling member 126 can be installed inside the base 121.

[0090] The plasma generating unit is used to generate plasma from the gas remaining in the discharge space, wherein the discharge space refers to a space located above the support unit 120 in the inner space of the chamber 110 .

[0091] The plasma generating unit can generate plasma in the discharge space inside the chamber 110 using a capacitively coupled plasma (CCP) source. In the above case, the plasma generating unit can use the shower head 140 as an upper electrode and the electrostatic chuck 122 as a lower electrode.

[0092] However, the present embodiment is not limited thereto. The plasma generating unit can also generate plasma in the discharge space inside the chamber 110 using an inductively coupled plasma (ICP) source. Figure 2As shown, the plasma generating unit can use a spiral antenna installed on the upper portion of the chamber 110 as an upper electrode and use an electrostatic chuck 122 as a lower electrode.

[0093] Figure 2 This is a cross-sectional view showing the schematic structure of a substrate processing system according to another embodiment of the present invention. Figure 2 , which will be explained in the subsequent content.

[0094] The plasma generating unit can include an upper electrode, a lower electrode, an upper power source 131 , and a lower power source 132 .

[0095] As described above, in the case where the plasma generating unit uses a capacitively coupled plasma (CCP) source, the shower head 140 can function as an upper electrode, and the electrostatic chuck 122 can function as a lower electrode.

[0096] The shower head 140 serving as an upper electrode and the electrostatic chuck 122 serving as a lower electrode may be installed facing each other vertically inside the chamber 110. The shower head 140 may be provided with a plurality of gas feeding holes 141 for injecting gas into the chamber 110, and may be formed with a larger diameter than the electrostatic chuck 122. The shower head 140 may be made of silicon or metal.

[0097] The upper power supply 131 is used to apply power to the upper electrode, that is, the showerhead 140. The upper power supply 131 as described above can be formed in a manner that can adjust the characteristics of the plasma. For example, the upper power supply 131 can be formed in a manner that can adjust the ion bombardment energy.

[0098] When multiple upper power supplies 131 are provided, a first matching network (not shown) electrically connected to the multiple upper power supplies may be further included. The first matching network can match the power of different frequencies input from the upper power supplies and load them to the shower head 140 .

[0099] In addition, a first impedance matching circuit (not shown) for matching impedance can be provided in the transmission line connecting the upper power supply 131 and the shower head 140. The first impedance matching circuit acts as a lossless passive circuit, and can effectively (that is, maximally) transmit electric energy from the upper power supply 131 to the shower head 140.

[0100] The lower power supply 132 is used to apply power to the lower electrode, ie, the electrostatic chuck 122. The lower power supply as described above can function as a plasma source for generating plasma, or function together with the upper power supply 131 to control the characteristics of plasma.

[0101] When multiple lower power sources 132 are provided, a second matching network (not shown) electrically connected to the multiple lower power sources may be further included. The second matching network can match the power of different frequencies input from the lower power sources and load the power to the electrostatic chuck 122 .

[0102] In addition, a second impedance matching circuit (not shown) for matching impedance can be provided in the transmission line connecting the lower power source 132 and the electrostatic chuck 122. The second impedance matching circuit acts as a lossless passive circuit, and can effectively (that is, maximally) transfer electric energy from the lower power source 132 to the electrostatic chuck 122.

[0103] like Figure 3 As shown, the shower head 140 can be divided into three areas in the horizontal direction, namely, a center area (center zone), a middle area (middle zone) and an edge area (edge ​​zone).

[0104] The edge region can be divided into a first region located on the inner side (i.e., the side close to the central region) and a second region (extreme edge or ex-edge) located on the outer side (i.e., the side away from the central region), and the second region can be divided into multiple small regions.

[0105] Figure 3 It is applicable to the Figure 1 The structure of an embodiment of a showerhead of a substrate processing system in FIG. Figure 3 Provide explanation.

[0106] The shower head 140 may include a central portion 210 , a middle portion 220 , and an edge portion 230 . The edge portion 230 may include a single first edge portion 231 and a plurality of second edge portions 232 . However, the present embodiment is not limited thereto. The shower head 140 may also include only the central portion 210 and the edge portion 230 .

[0107] The central portion 210 is located in the central region of the shower head 140 and may be provided with a plurality of gas injection holes 141 .

[0108] The central portion 210 may be installed in the chamber 110 to face the central region of the electrostatic chuck 122 . That is, the central portion 210 may be formed so that the gas ejected through the central portion 210 and the excited plasma mainly reach the central region of the substrate placed on the electrostatic chuck 122 .

[0109] The central portion 210 may be formed in a circular (or elliptical) thin plate form. The central portion 210 may be formed in a width of, for example, 100 mm (0 mm to 110 mm based on the center of the shower head 140 ).

[0110] The middle portion 220 is located in the middle region of the shower head 140 , and similar to the central portion 210 , can be provided with a plurality of gas injection holes 141 .

[0111] The middle portion 220 may be installed in the chamber 110 to face the middle region of the electrostatic chuck 122 . That is, the gas ejected through the middle portion 220 and the excited plasma may mainly reach the middle region of the substrate placed on the electrostatic chuck 122 .

[0112] The center of the intermediate portion 220 can be the same as that of the central portion 210, and the intermediate portion 220 can be formed with a larger diameter than the central portion 210. That is, the intermediate portion 220 can be formed in the form of an annular thin plate arranged in the diameter direction and surrounding the central portion 210.

[0113] The middle portion 220 can be formed with a smaller width than the central portion 210. The middle portion 220 can be formed with a width of, for example, 94 mm (131 mm to 225 mm based on the center of the shower head 140). However, the present embodiment is not limited thereto. The middle portion 220 can also be formed with the same width as the central portion 210, or with a larger width than the central portion 210.

[0114] The middle portion 220 may be formed with a larger area than the central portion 210. In the above case, the middle portion 220 may be provided with a larger number of gas injection holes 141 than the central portion 210. However, the present embodiment is not limited thereto. The middle portion 220 may also be formed with the same area as the central portion 210, or may be formed with a smaller area than the central portion 210. In the above case, the middle portion 220 may be provided with the same number of gas injection holes 141 as the central portion 210, or may be provided with a smaller number of gas injection holes 141 than the central portion 210.

[0115] The edge portion 230 is located at the edge region of the shower head 140 , and similar to the central portion 210 and the middle portion 220 , may be provided with a plurality of gas injection holes 141 .

[0116] The edge portion 230 may be installed in the chamber 110 to face the edge region of the electrostatic chuck 122 . That is, the edge portion 230 may be formed so that the gas ejected through the edge portion 230 and the excited plasma mainly reach the edge region of the substrate placed on the electrostatic chuck 122 .

[0117] The center of the edge portion 230 can be the same as the center of the central portion 210, and the edge portion 230 can be formed with a larger diameter than the middle portion 220. That is, the edge portion 230 can be formed in the form of a thin plate in an annular shape arranged along the diameter direction and surrounding the middle portion 220. The edge portion 230 can include a first edge portion 231 formed at a position close to the middle portion 220 and a second edge portion 232 formed at a position closer to the outer contour than the first edge portion 231. In the case where the edge portion 230 includes the first edge portion 231 and the second edge portion 232, it can be formed with a smaller width than the central portion 210 and the middle portion 220. However, the present embodiment is not limited thereto. The edge portion 230 can also be formed with the same width as the central portion 210 and the middle portion 220, or with a larger width than at least one of the central portion 210 and the middle portion 220.

[0118] In addition, when the edge portion 230 includes the first edge portion 231 and the second edge portion 232, it can be formed with a larger area than the central portion 210 and the middle portion 220. In the above case, the edge portion 230 can be equipped with a larger number of gas injection holes 141 than the central portion 210 and the middle portion 220. However, the present embodiment is not limited thereto. The edge portion 230 can also be formed with the same area as the central portion 210 and the middle portion 220. In the above case, the edge portion 230 can be equipped with the same number of gas injection holes 141 as the central portion 210 and the middle portion 220.

[0119] In addition, the edge portion 230 may be formed with a smaller area than at least one of the central portion 210 and the middle portion 220. In this case, the edge portion 230 may be provided with a smaller number of gas injection holes 141 than at least one of the central portion 210 and the middle portion 220.

[0120] The first edge portion 231 can be formed with a narrower width than the second edge portion 232. The first edge portion 231 can be formed with a width of, for example, 16 mm (247 mm to 263 mm based on the center of the shower head 140), and the second edge portion 232 can be formed with a width of, for example, 42 mm (287 mm to 329 mm based on the center of the shower head 140). However, the present embodiment is not limited thereto. The first edge portion 231 can also be formed with the same width as the second edge portion 232, or with a greater width than the second edge portion 232.

[0121] The second edge portion 232 can include a plurality of small portions. In the above case, each small portion can be located in each small area divided from the second area. For example, the second edge portion 232 can include four small portions such as the first small portion 232a, the second small portion 232b, the third small portion 232c, and the fourth small portion 232d.

[0122] However, this embodiment is not limited thereto. Figure 4a As shown, the second edge portion 232 may also include three small portions such as a first small portion 232a, a second small portion 232b and a third small portion 232c, or Figure 4b As shown, five small parts such as the first small part 232a, the second small part 232b, the third small part 232c, the fourth small part 232d and the fifth small part 232e can be included. Figure 4a as well as Figure 4b It is applicable to the Figure 1 An exemplary diagram illustrating the structure of another embodiment of a shower head of a substrate processing system.

[0123] When the second edge portion 232 includes a plurality of small parts, the plurality of small parts can be formed with the same length. However, the present embodiment is not limited thereto. The plurality of small parts can also be formed with different lengths. In addition, some of the plurality of small parts can be formed with the same length, and the remaining plurality can be formed with different lengths.

[0124] When the second edge portion 232 includes a plurality of small portions, the plurality of small portions can be formed with the same width. However, the present embodiment is not limited thereto. The plurality of small portions can also be formed with different widths. In addition, some of the plurality of small portions can be formed with the same width, and the remaining plurality can be formed with different widths.

[0125] In the case where the second edge portion 232 includes a plurality of small portions, the plurality of small portions may be formed with the same area. In the above case, the plurality of small portions may be equipped with the same number of gas injection holes 141. However, the present embodiment is not limited thereto. The plurality of small portions may also be formed with different areas. In the above case, the plurality of small portions may be equipped with different numbers of gas injection holes 141.

[0126] In addition, some of the plurality of small parts can be formed with the same length, while the remaining ones can be formed with different lengths. In the above case, the above ones can be equipped with the same number of gas injection holes 141, while the remaining ones can be equipped with different numbers of gas injection holes 141.

[0127] Furthermore, in the present embodiment, the central portion 210 , the middle portion, the first edge portion 231 of the edge portion 230 , and the like can also be divided into a plurality of structures in the same manner as the second edge portion 232 of the edge portion 230 .

[0128] Next, we will review Figure 1 Provide explanation.

[0129] The gas supply unit 150 is used to supply process gas to the interior of the chamber 110 through the shower head 140 . The gas supply unit 150 as described above may include a first gas supply source 151 , a gas supply pipeline 152 , a gas distributor 153 , and a gas distribution pipeline 154 .

[0130] The first gas supply source 151 is used to supply an etching gas used when processing a substrate. As described above, the first gas supply source 151 can supply a gas containing a fluorine component as an etching gas. As an example, the first gas supply source 151 can supply a gas containing a fluorine component as an etching gas. 6 CF 4 And other gases.

[0131] A single first gas supply source 151 may be provided to supply etching gas to the shower head 140 . However, the present embodiment is not limited thereto. A plurality of first gas supply sources 151 may be provided to supply etching gas to the shower head 140 .

[0132] In addition, the gas supply unit 150 may further include a second gas supply source (not shown) for supplying a deposition gas.

[0133] The second gas supply source is supplied through the shower head 140, and its purpose is to achieve anisotropic etching by protecting the side of the substrate pattern. The second gas supply source can be used as a deposition gas supply such as C 4 F 8 , C 2 F 4 And other gases.

[0134] The gas supply line 152 is used to connect the first gas supply source 151 and the gas distributor 153. The gas supply line 152 can transfer the gas from the first gas supply source 151 to the gas distributor 153.

[0135] The gas distributor 153 is used to distribute the etching gas supplied from the first gas supply source 151 to the shower head 140. The gas distributor 153 as described above can distribute the etching gas to various parts of the shower head 140, that is, the central part 210, the middle part 220, the first edge part 231 of the edge part 230, and the second edge part 232 of the edge part 230.

[0136] The gas distributor 153 can distribute equal amounts of etching gas to the respective parts 210, 220, 231, 232 of the shower head when distributing the etching gas to the respective parts 210, 220, 231, 232 of the shower head. However, the present embodiment is not limited thereto. The gas distributor 153 can also distribute unequal amounts of etching gas to the respective parts 210, 220, 231, 232 of the shower head when distributing the etching gas to the respective parts 210, 220, 231, 232 of the shower head.

[0137] In addition, the gas distributor 153 can also distribute equal amounts of etching gas to several parts of the shower head 140 , and distribute unequal amounts of etching gas to the remaining parts of the shower head 140 .

[0138] In addition, the gas distributor 153 can also distribute the mixed gas obtained by mixing the etching gas and the deposition gas to the respective parts 210 , 220 , 231 , and 232 of the shower head 140 when the etching gas is supplied from the first gas supply source 151 and the deposition gas is supplied from the second gas supply source.

[0139] The gas distribution pipeline 154 is used to connect the gas distributor 153 and the shower head 140 . The gas distribution pipeline 154 can transfer the gas from the gas distributor 153 to the shower head 140 .

[0140] The gas distributor 153 can be connected to each part 210, 220, 231, 232 of the shower head 140 through the gas distribution pipeline 154. Figure 5 As shown, the gas distribution pipeline 154 can include a first distribution pipeline 154a, a second distribution pipeline 154b, a third distribution pipeline 154c, and a fourth distribution pipeline 154d.

[0141] Figure 5 This is a conceptual diagram schematically illustrating the structure of a process gas supply device according to an embodiment of the present invention.

[0142] like Figure 5 As shown, the engineering gas supply device 300 can include a shower head 140 and a gas supply unit 150 .

[0143] The shower head 140 may include a central portion 210 , a middle portion 220 , a first edge portion 231 of the edge portion 230 , and four second edge portions 232 of the edge portion 230 , namely, a first second portion 232a , a second second portion 232b , a third second portion 232c , and a fourth second portion 232d .

[0144] The gas supply unit 150 may include a first gas supply source 151 , a gas supply pipeline 152 , a gas distributor 153 , and four gas distribution pipelines 154 , namely, a first distribution pipeline 154 a , a second distribution pipeline 154 b , a third distribution pipeline 154 c , and a fourth distribution pipeline 154 d .

[0145] The first distribution line 154a is used to connect the gas distributor 153 and the central portion 210 of the shower head 140. The first distribution line 154a can supply the gas distributed by the gas distributor 153 to the inside of the chamber 110 through the central portion 210 of the shower head 140.

[0146] The second distribution line 154b is used to connect the gas distributor 153 and the middle portion 220 of the shower head 140. The second distribution line 154b can supply the gas distributed by the gas distributor 153 to the inside of the chamber 110 through the middle portion 220 of the shower head 140.

[0147] The third distribution line 154c is used to connect the gas distributor 153 to the first edge 231 of the edge 230 of the shower head 140. The third distribution line 154c can supply the gas distributed by the gas distributor 153 to the inside of the chamber 110 through the first edge 231 of the shower head 140.

[0148] The fourth distribution line 154d is used to connect the gas distributor 153 to the second edge portion 232 of the edge portion 230 of the shower head 140. The fourth distribution line 154d can supply the gas distributed by the gas distributor 153 to the inside of the chamber 110 through the second edge portion 232 of the shower head 140.

[0149] A plurality of fourth distribution pipes 154d may be provided. The number of the fourth distribution pipes 154d as described above may be the same as the number of the second edge portions 232. In this case, the fourth distribution pipe 154d may connect the gas distributor 153 and the second edge portion 232 of the shower head 140 one-to-one.

[0150] However, the present embodiment is not limited thereto, and the number of the fourth distribution pipes 154 d may be smaller than the number of the second edge portions 232 , so that the gas distributor 153 and the second edge portions 232 of the shower head 140 are connected in a one-to-many manner.

[0151] like Figure 6 As shown, the engineering gas supply device 300 can further include a supply control valve 310 , a distribution control valve 320 , and a valve control unit. Figure 6 This is a conceptual diagram schematically illustrating the structure of an engineering gas supply device according to another embodiment of the present invention. Figure 6 Provide explanation.

[0152] The supply control valve 310 is installed on the gas supply pipeline 152 and can control the flow of gas on the gas supply pipeline 152. The supply control valve 310 can thereby open / close the gas supply on the gas supply pipeline 152 or adjust the flow of gas on the gas supply pipeline 152.

[0153] The distribution control valve 320 is installed on the gas distribution pipeline 154 and can control the flow of gas on the gas distribution pipeline 154. The distribution control valve 320 can thereby open / close the gas supply on the gas distribution pipeline 154 or adjust the flow of gas on the gas distribution pipeline 154.

[0154] The distribution control valve 320 can include four control valves 321 , 322 , 323 , and 324 , namely, a first control valve 321 , a second control valve 322 , a third control valve 323 , and a fourth control valve 324 .

[0155] The first control valve 321 is mounted on the first distribution line 154 a and can control the flow of gas on the first distribution line 154 a .

[0156] The second control valve 322 is mounted on the second distribution line 154 b and can control the flow of gas on the second distribution line 154 b .

[0157] The third control valve 323 is mounted on the third distribution line 154c, and can control the flow of gas on the third distribution line 154c.

[0158] The fourth control valve 324 is mounted on the fourth distribution line 154d, and can control the flow of gas on the fourth distribution line 154d.

[0159] The valve control unit is used to control the supply control valve 310 and the distribution control valve 320. The valve control unit as described above can control the supply control valve 310 and the distribution control valve 320 independently.

[0160] When the valve control unit controls the distribution control valve 320, namely the first control valve 321, the second control valve 322, the third control valve 323 and the fourth control valve 324, it is possible to supply equal amounts of gas to the various parts 210, 220, 231, 232 of the shower head 140 by controlling the first control valve 321, the second control valve 322, the third control valve 323 and the fourth control valve 324.

[0161] However, the present embodiment is not limited thereto. The valve control unit can also supply different amounts of gas to the respective parts 210, 220, 231, 232 of the shower head 140 by controlling the first control valve 321, the second control valve 322, the third control valve 323, and the fourth control valve 324. In the above case, the valve control unit can supply different amounts of gas to the respective parts 210, 220, 231, 232 of the shower head 140 based on the etching rates (ER; Etching Rate) of the respective regions on the substrate corresponding to the respective parts 210, 220, 231, 232 of the shower head 140 by controlling the first control valve 321, the second control valve 322, the third control valve 323, and the fourth control valve 324.

[0162] In addition, the valve control unit can also supply equal amounts of gas to several parts of the shower head 140 and supply unequal amounts of gas to the remaining parts of the shower head 140 by controlling the first control valve 321, the second control valve 322, the third control valve 323, and the fourth control valve 324. In the above case, the valve control unit can also supply equal amounts of gas to several parts of the shower head 140 and supply unequal amounts of gas to the remaining parts of the shower head 140 based on the etching rates (ER) of the respective regions on the substrate corresponding to the respective parts 210, 220, 231, and 232 of the shower head 140.

[0163] In addition, Figure 6 2 shows a configuration in which the process gas supply device 300 includes both the supply control valve 310 and the distribution control valve 320 . However, the present embodiment is not limited thereto. The process gas supply device 300 may include only one of the supply control valve 310 and the distribution control valve 320 .

[0164] As described above, when the plasma generating unit uses a capacitively coupled plasma (CCP) source, the substrate processing system 100 can adopt the following method: Figure 1 The composition shown.

[0165] Next, the substrate processing system 100 in the case where an inductively coupled plasma (ICP) source is used as a plasma generating unit will be described.

[0166] for Figure 2 The substrate processing system 100 in Figure 1 The different parts compared with the substrate processing system 100 are described.

[0167] The helical antenna 510 has a coil forming a closed loop installed therein, and can be installed at the upper portion of the chamber 110. The helical antenna 510 as described above can generate a magnetic field and an electric field inside the chamber 110 based on the power supplied from the upper power supply 131, thereby playing a role in exciting the gas flowing into the chamber 110 through the shower head 140 into plasma.

[0168] A planar spiral coil may be installed in the helical antenna 510 . However, the present embodiment is not limited thereto. The structure and size of the coil may be variously changed by a person having general knowledge in the relevant technical field.

[0169] In addition, the helical antenna 510 can also be installed outside the chamber 110 (for example, on the upper side of the upper portion of the chamber 110 ).

[0170] In the above content, embodiments applicable to the present invention are described in conjunction with the accompanying drawings, but a person having general knowledge of the technical field to which the present invention belongs should be able to understand that the present invention can also be implemented in other specific forms without changing its technical ideas or essential features. Therefore, the embodiments described in the above content are for illustrative purposes only and are not limiting in all aspects.

Claims

1. An engineering gas supply device, characterized in that: include: A shower head, installed inside a chamber for performing an etching process, and equipped with a plurality of gas injection holes for the process gas to pass through; as well as, a gas supply unit, installed outside the chamber and connected to the shower head, for supplying the engineering gas to the interior of the chamber through the gas injection holes; The above-mentioned sprinkler head comprises: The central part of the plate shape; an annular middle portion arranged to surround the central portion; and The edge portion of the ring shape is arranged in a manner of surrounding the middle portion; Wherein, the edge portion includes: a first edge portion having a ring shape; and, a second edge portion in an annular shape, arranged so as to surround the first edge portion and divided into a plurality of portions; The width from the inner radial edge of the second edge portion to the outer radial edge of the second edge portion is greater than the width from the inner radial edge of the first edge portion to the outer radial edge of the first edge portion.

2. The engineering gas supply device according to claim 1, characterized in that: The gas supply unit comprises: A gas supply source, used to provide the above-mentioned engineering gas; A gas distributor, used for distributing the above-mentioned engineering gas; a gas supply pipeline, used to connect the gas supply source with the gas distributor; and The gas distribution pipeline is used to respectively connect the gas distributor and the central portion, the gas distributor and the middle portion, the gas distributor and the first edge portion, and the gas distributor and the second edge portion.

3. The engineering gas supply device according to claim 2, characterized in that: The number of the gas distribution pipelines for connecting the gas distributor and the second edge portion is the same as the number of the second edge portions.

4. The engineering gas supply device according to claim 2, characterized in that: Also includes: a distribution control valve, used to control the flow of the engineering gas on the gas distribution pipeline; and The valve control unit is used to control the above distribution control valve.

5. A substrate processing system, characterized in that: include: A chamber for performing etching works; An electrostatic chuck, installed inside the chamber, for placing a substrate; A shower head is installed in a chamber for performing an etching process in a manner of facing the electrostatic chuck up and down, and is equipped with a plurality of gas injection holes for allowing process gas to pass; and a gas supply unit, installed outside the chamber and connected to the shower head, for supplying the engineering gas to the interior of the chamber through the gas injection holes; The above-mentioned sprinkler head comprises: The central part of the plate shape; an annular middle portion arranged to surround the central portion; and The edge portion of the ring shape is arranged in a manner of surrounding the middle portion; Wherein, the edge portion includes: a first edge portion having a ring shape; and, a second edge portion in an annular shape, arranged so as to surround the first edge portion and divided into a plurality of portions; wherein the width from the inner radial edge of the second edge portion to the outer radial edge of the second edge portion is greater than the width from the inner radial edge of the first edge portion to the outer radial edge of the first edge portion; At this time, the shower head functions as an upper electrode, and the electrostatic chuck functions as a lower electrode.

6. A substrate processing system, characterized in that: include: A chamber for performing etching works; An electrostatic chuck, installed inside the chamber, for placing a substrate; A shower head is installed in the chamber for performing the etching process in a manner of facing the electrostatic chuck up and down, and is equipped with a plurality of gas injection holes for the process gas to pass through; a gas supply unit, installed outside the chamber and connected to the shower head, for supplying the engineering gas to the inside of the chamber through the gas injection holes; and The antenna is installed on the upper part of the chamber and is provided with a coil in a spiral shape; The above-mentioned sprinkler head comprises: The central part of the plate shape; an annular middle portion arranged to surround the central portion; and The edge portion of the ring shape is arranged in a manner of surrounding the middle portion; Wherein, the edge portion includes: a first edge portion having a ring shape; and, a second edge portion in an annular shape, arranged so as to surround the first edge portion and divided into a plurality of portions; wherein the width from the inner radial edge of the second edge portion to the outer radial edge of the second edge portion is greater than the width from the inner radial edge of the first edge portion to the outer radial edge of the first edge portion; At this time, the antenna functions as an upper electrode, and the electrostatic chuck functions as a lower electrode.

7. The substrate processing system according to claim 5 or claim 6, characterized in that: The gas supply unit comprises: A gas supply source, used to provide the above-mentioned engineering gas; A gas distributor, used for distributing the above-mentioned engineering gas; a gas supply pipeline, used to connect the gas supply source with the gas distributor; and The gas distribution pipeline is used to respectively connect the gas distributor and the central portion, the gas distributor and the middle portion, the gas distributor and the first edge portion, and the gas distributor and the second edge portion.

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