Cleaning methods for semiconductor device manufacturing

Abstract

A method for cleaning substrates such as semiconductor substrates for IC manufacturing is described, comprising cleaning the semiconductor substrate using a first mixture of one of an acid and a base and ozone, followed by cleaning the semiconductor substrate using a second mixture of another of an acid and a base and ozone. The cleaning mixture may further include deionized water. In one embodiment, the mixture is sprayed onto a heated substrate surface. The acid may be HF, and the base may be NH4OH. This invention provides a cleaning method for semiconductor device manufacturing.

Description

[0001] This application is a divisional application, with its parent application having application number 201510464458.7, application date of July 31, 2015, and invention title "Cleaning Method for Semiconductor Device Manufacturing". Technical Field

[0002] This invention generally relates to the field of semiconductor technology, and more specifically, to a method for manufacturing semiconductor devices. Background Technology

[0003] The semiconductor integrated circuit (IC) industry has experienced exponential growth. Technological advancements in IC materials and design have resulted in multiple generations of ICs, each with smaller and more complex circuitry than the previous generation. In the evolution of ICs, functional density typically increases while geometric dimensions decrease. This scaling down process usually leads to increased production efficiency and reduced costs. However, this scaling down also increases the complexity of handling and manufacturing. These complexities come with their own associated costs.

[0004] For example, as technology nodes shrink, one increasing cost is the requirement for large quantities of chemicals used to support manufacturing processes and their complexity. The increasing amount of chemicals over time carries costs not only related to obtaining the chemicals themselves but also to environmental impacts. Processes requiring large quantities of chemicals are wafer cleaning processes. Wafer cleaning processes are performed throughout the IC manufacturing process. Exemplary conventional cleaning processes are “Standard Clean 1” and “Standard Clean 2,” also known as SC1 and SC2. Cleaning processes are typically used to remove particles (e.g., SC1) and / or metal ions (e.g., SC2). While existing cleaning processes generally meet specific requirements, they are not entirely satisfactory in all aspects. Summary of the Invention

[0005] To address the deficiencies in the prior art, according to one aspect of the present invention, a method is provided, comprising: providing a semiconductor substrate; performing a first cleaning of the semiconductor substrate using a first cleaning mixture comprising one of an acid and a base, ozone, and water; rinsing the semiconductor substrate after the first cleaning; and performing a second cleaning of the semiconductor substrate using a second cleaning mixture after rinsing, the second cleaning mixture comprising another of an acid and a base, ozone, and water.

[0006] Preferably, the first cleaning mixture comprises an acid, wherein the acid comprises HF.

[0007] Preferably, the second cleaning mixture comprises an alkali, wherein the alkali comprises NH4OH.

[0008] Preferably, the first cleaning mixture comprises an alkali, wherein the alkali comprises NH4OH.

[0009] Preferably, the second cleaning mixture comprises an acid, said acid including HF.

[0010] Preferably, the first cleaning and the second cleaning further include: heating the back side of the semiconductor substrate while providing the first cleaning mixture and the second cleaning mixture to the semiconductor substrate.

[0011] Preferably, the method further includes cleaning the semiconductor substrate after the second cleaning.

[0012] Preferably, the method further includes: performing the first cleaning again using the first cleaning mixture after the second cleaning.

[0013] According to another aspect of the present invention, a method for cleaning a semiconductor substrate is provided, comprising: providing a first cleaning solution comprising HF, ozone and water on the surface of the semiconductor substrate; cleaning the semiconductor substrate after providing the first cleaning solution; and providing a second cleaning solution comprising NH4OH, ozone and water on the surface of the semiconductor substrate after cleaning.

[0014] Preferably, the method further includes heating the back side of the semiconductor substrate, which is opposite to the surface of the semiconductor substrate, during the provision of the first cleaning solution and the provision of the second cleaning solution.

[0015] Preferably, the first cleaning solution is provided for a duration of approximately 30 seconds, and the second cleaning solution is provided for a duration of approximately 60 seconds.

[0016] Preferably, providing the first cleaning solution further includes providing at least one of NH4F and a surfactant.

[0017] Preferably, the method further includes: after providing the second cleaning solution, providing a second first cleaning solution comprising HF, ozone and water on the surface of the semiconductor substrate; thereafter, providing a second second cleaning solution comprising NH4OH, ozone and water on the surface of the semiconductor substrate.

[0018] Preferably, the first cleaning solution comprising HF, ozone, and water includes: providing HF at a concentration between approximately 1% and approximately 500 parts per million (ppm) and providing ozone at a concentration between approximately 500 ppm and 1 ppm.

[0019] Preferably, the second cleaning solution comprising NH4OH, ozone, and water comprises providing between approximately 10% and approximately 0.01% NH4OH and between approximately 500 ppm and 1 ppm ozone.

[0020] According to another aspect of the present invention, a method for manufacturing a semiconductor device is provided, comprising: forming a first component on a surface of a semiconductor wafer; spraying a first cleaning mixture onto the first component on the surface, the first cleaning mixture comprising ozone and HF; and after stopping the spraying of the first cleaning mixture, spraying a second cleaning mixture onto the first component on the surface, the second cleaning mixture comprising ozone and NH4OH, wherein the second cleaning mixture is sprayed in situ with the spraying of the first cleaning mixture.

[0021] Preferably, the method further includes: heating the semiconductor wafer to a first temperature during the spraying of the first cleaning mixture; and heating the semiconductor wafer to a second temperature, different from the first temperature, during the spraying of the second cleaning mixture.

[0022] Preferably, the semiconductor wafer is heated by heating the back surface of the semiconductor wafer, wherein the back surface is opposite to the front surface of the semiconductor wafer.

[0023] Preferably, the first cleaning mixture comprises between about 1% and about 500 parts per million (ppm) of HF and between about 500 ppm and 1 ppm of ozone.

[0024] Preferably, the second cleaning mixture comprises between about 10% and about 0.01% NH4OH and between about 500 ppm and 1 ppm ozone. Attached Figure Description

[0025] The various aspects of the invention will be better understood from the following detailed description when read in conjunction with the accompanying drawings. Note that, in accordance with standard industry practice, the components are not drawn to scale. In fact, the dimensions of the components may be arbitrarily increased or decreased for clarity of discussion.

[0026] Figure 1 This is a flowchart illustrating an example of a method for cleaning a semiconductor substrate according to one or more aspects of the present invention.

[0027] Figure 2 It shows the basis Figure 1 A flowchart of an embodiment of a method for cleaning a semiconductor substrate.

[0028] Figure 3 This is a schematic diagram of an embodiment of an apparatus for providing a cleaning solution according to one or more aspects of the present invention.

[0029] Figure 4 This is a perspective view of an embodiment of an apparatus for providing a cleaning solution to a target semiconductor substrate according to one or more aspects of the present invention.

[0030] Figure 5 This is a flowchart illustrating an embodiment of a method for cleaning a semiconductor substrate according to another aspect of the present invention. Detailed Implementation

[0031] It should be understood that the following disclosure provides many different embodiments or instances of various features for carrying out the subject matter of this invention. Specific examples of components or configurations are described below to simplify the invention. Of course, these are merely examples and not intended to be limiting. For example, in the following description, forming a first component on or above a second component may include embodiments where the first and second components are formed in direct contact, and may also include embodiments where accessory components are formed on the first and second components such that the first and second components are not in direct contact. For simplicity and clarity, the various components may be drawn at any scale.

[0032] Figure 1 A method 100 for cleaning a substrate is illustrated. It should be understood that additional steps may be provided before, during, and / or after method 100. Method 100 begins at block 102, wherein a semiconductor substrate is provided.

[0033] In one embodiment, the substrate is a wafer. Devices and portions thereof, such as integrated circuits, light-emitting diodes (LEDs), TFT-LCDs, memory cells, and / or logic circuits, may be formed on the substrate. The substrate may further include passive components such as resistors, capacitors, inductors, and fuses, and / or active components such as p-channel field-effect transistors (PFETs), n-channel transistors (NFETs), metal-oxide-semiconductor field-effect transistors (MOSFETs), complementary metal-oxide-semiconductor transistors (CMOS), high-voltage transistors, high-frequency transistors, and / or other suitable components or portions thereof. One or more components may be fabricated in part (e.g., in a process).

[0034] The substrate may be a semiconductor substrate, including: elemental semiconductors, including crystalline silicon and / or crystalline germanium; compound semiconductors, including silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide, and / or indium antimonide; alloy semiconductors, including SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and / or GaInAsP; or combinations thereof. The substrate may be strained, may be a semiconductor-on-insulator (SOI), have an epitaxial layer, and / or have other enhancing properties. In other embodiments, method 100 may be performed to clean the substrate, which may comprise a non-semiconductor material, such as a glass substrate for a thin-film transistor liquid crystal display (TFT-LCD) device or fused silica or calcium fluoride for a photomask (mask).

[0035] The substrate may include one or more material layers on which one or more components are formed. Exemplary materials for forming components include high-k dielectric layers, gate layers, hard mask layers, interface layers, capping layers, diffusion / barrier layers, dielectric layers, conductive layers, other suitable layers, and / or combinations thereof. In one embodiment, method 100 is performed on a substrate on which gate components are formed on a surface (e.g., a target surface to be cleaned). Other exemplary components include, but are not limited to, interconnect components (e.g., wires and vias), contact components, source / drain components, conductive plate components, doped regions, isolation components, LED elements and portions thereof, trench components, dummy components, etc. In embodiments, fin structures (typically, fin field-effect transistors (FinFETs)) are disposed on the substrate, as discussed below.

[0036] Then, method 100 proceeds to block 104, where a cleaning solution is provided. Note that the term "solution" as used herein does not necessarily refer to a homogeneous mixture of any components, but simply to a liquid and / or gas mixture containing one or more chemical components. The provided cleaning solution includes ozone. The cleaning solution also includes deionized water (DIW). The cleaning solution may further include at least one of an acid or a base. In one embodiment, the cleaning solution includes ozone, DIW, and an acid or base. Exemplary acids that may be included in the cleaning solution include hydrochloric acid (HCl) and hydrofluoric acid (HF). Exemplary bases that may be included in the cleaning solution include ammonium hydroxide (NH4OH). In one embodiment, the cleaning solution includes only ozone, DIW, and one of an acid or base. For example, the solution does not include hydrogen peroxide (H2O2). Therefore, exemplary components of the cleaning solution include O3 and HF. Another exemplary component of the cleaning solution includes O3 and NH4OH. Yet another exemplary component of the cleaning solution includes O3 and HCl. One or more of these exemplary components may further include DIW.

[0037] In one embodiment, the cleaning solution comprises at least one part acid and one part ozone. In yet another embodiment, the cleaning solution comprises one part acid and one part ozone, and greater than or equal to approximately 40 parts DIW. In yet another embodiment, the cleaning solution comprises one part acid and one part ozone, and greater than or equal to approximately 50 parts DIW. In one embodiment, the cleaning solution comprises at least one part alkali and approximately eight (8) parts ozone. In yet another embodiment, the cleaning solution comprises one part alkali, approximately eight parts ozone, and approximately 60 parts DIW.

[0038] Then, method 100 proceeds to block 106, where a cleaning solution is provided on the surface of a substrate. The cleaning solution can be sprayed onto the surface of the target substrate. A single wafer spraying tool can be used to spray the cleaning solution onto the semiconductor substrate.

[0039] In one embodiment, the target substrate is heated before and / or during the application of a cleaning solution to the surface of the semiconductor wafer. In one embodiment, the substrate is heated to between approximately 30 degrees Celsius (°C) and approximately 60°C. In another embodiment, the substrate is heated to approximately 40°C. Heating the substrate can provide advantages such as increased solubility of ozone (e.g., in DIW, acids, or alkalis); improved cleaning efficiency; reduced ozone loss; increased impurity removal rates (e.g., NH4OH); and / or other advantages known or to be understood later.

[0040] The following process parameters are provided by way of example but are not intended to be limiting. In one embodiment, the chemical solution may be sprayed onto the substrate over a period of approximately 20 seconds to approximately 80 seconds. In yet another embodiment, for example, the chemical solution may be sprayed onto the substrate over a period of approximately 30 seconds to approximately 55 seconds. The substrate may be rotated while the chemical solution is applied to its surface. In one embodiment, the substrate may be rotated, for example, at a speed of approximately 800 rpm.

[0041] After the cleaning solution is introduced, box 106 may proceed with a deionized water (DIW) cleaning process. For example, the cleaning process may be between approximately 1 minute and approximately 2 minutes. Box 106 may further include a drying process, such as a spin-drying process. Optionally, box 106 may include multiple processes for providing the aforementioned cleaning solution to the target substrate, such as cleaning solutions with different components (e.g., acid / ozone, alkali / ozone).

[0042] During semiconductor device manufacturing processes, as indicated by the dashed line in return box 104, the cleaning performed with the cleaning solution in box 106 can be repeated any number of times. In one embodiment, the cleaning process in box 106 is repeated in a continuous process (e.g., a process without interleaving), but using different chemical solutions. For example, box 106 can be performed first using an alkali (e.g., NH4OH) and ozone, followed by cleaning with a chemical solution of acid (HCl) and ozone. As another example, box 106 can be performed first using acid (HCl) and ozone, followed by cleaning with a chemical solution of alkali (e.g., NH4OH) and ozone. In embodiments, as indicated by optional box 108, the process can interleave the cleaning process, such as a rinsing process, a drying process, or an additional manufacturing process (see below) that forms one or more components on a substrate surface (such as the surface of substrate 404). Figure 4 (Description to follow). In other embodiments, the cleaning process may be performed continuously without an insertion process, thus omitting box 108.

[0043] A cleaning solution provided to the surface of a semiconductor substrate can etch / remove unwanted materials from the semiconductor substrate. For example, in embodiments where the cleaning solution includes HF, it can remove a portion of oxides (e.g., SiO2) on the target substrate. A cleaning solution provided to the surface of a semiconductor substrate can clean metal particles from the semiconductor substrate. For example, in embodiments where the cleaning solution includes HCl and ozone, it removes and / or cleans metals (e.g., unwanted metal ions). A cleaning solution introduced to the surface of a semiconductor substrate can remove unwanted particles from the semiconductor substrate. For example, in embodiments where the cleaning solution includes NH4OH and ozone, it removes particles. In one or more embodiments, ozone can be used as a substrate surface oxidant useful in the cleaning process.

[0044] Now refer to Figure 2 The flowchart illustrates a method 200 for cleaning a target substrate or wafer, such as a semiconductor substrate. Method 200 may be an embodiment of the method 100 described above. Thus, the description of method 100 can be similarly applied to method 200. Method 200 further provides specific details regarding the method of operating the apparatus to introduce a cleaning solution into the target substrate.

[0045] Method 200 begins at block 202, wherein a substrate is provided. The substrate may be substantially similar to the one referenced above. Figure 1 The substrate described in block 102 of method 100. The substrate is placed on a stage (e.g., a chuck or substrate) for holding and / or positioning the substrate, such as a semiconductor wafer. In one embodiment, the stage may be used to rotate the substrate. In one embodiment, the stage may be used to heat the substrate (or its surface). (Refer to...) Figure 4 An example is shown: a cleaning apparatus 400 including a stage 402. The stage 402 holds a substrate (wafer 404). The wafer 404 may include components (gate components) formed on its surface. Other exemplary components include, but are not limited to, interconnect components (e.g., wires and vias), contact components, source / drain components, conductive plate components, doped regions, isolation components, LED elements and portions thereof, trench components, dummy components, etc.

[0046] Then, method 200 proceeds to box 204, where the surface of the target substrate is heated. A stage can provide heating of the target substrate. Heating increases the temperature of the target substrate's surface used for cleaning.

[0047] In one embodiment, the target substrate surface is heated while the cleaning solution is being applied to the surface. In one embodiment, the target substrate is heated to between approximately 30 degrees Celsius (°C) and approximately 60 degrees Celsius (°C). In yet another embodiment, the target substrate is heated to approximately 40 degrees Celsius (°C). Heating the substrate surface to which the cleaning solution is applied can provide advantages such as increased solubility of ozone, such as in DIW, acids, or alkalis; improved cleaning efficiency; reduced ozone loss; increased impurity removal rates (e.g., NH4OH); and / or other advantages known or understood later. In one embodiment, box 204 is omitted. (Refer to...) Figure 4 In one example, heating energy 414 is shown to be provided to wafer 404 via stage 402.

[0048] Then, method 200 proceeds to block 206, wherein a first fluid comprising an acid, a base, and / or DIW is provided. For example, the first fluid (e.g., a liquid or gas) may comprise one of an acid or base mixed with DIW. Exemplary acids that may be contained in the first fluid may include hydrochloric acid (HCl) and hydrofluoric acid (HF). Exemplary bases that may be contained in the first fluid may include ammonium hydroxide (NH4OH). In one embodiment, the first fluid does not include hydrogen peroxide (H2O2). Therefore, exemplary components of the first fluid are HF and DIW. Another exemplary component of the first fluid is DIW and NH4OH. Yet another exemplary component of the first fluid includes DIW and HCl.

[0049] The first fluid can be kept in a container and supplied to the cleaning device using devices such as pipes or tubes with pumps, valves, etc. Figure 3 An exemplary embodiment of a fluid transfer system 300 having a first container 302 is provided. In one embodiment, the first container includes DIW and an acid or base. In one embodiment, the first container 302 includes HF and DIW; DIW and HCl; or HIW and NH4OH. The fluid in the first container can be removed from the container by a pump 306. The flow rate of the fluid discharged from the first container can be controlled by a valve 308. Figure 3 The image shows a first fluid 312. Fluid 312 may be held in a device such as a pipe or tube, or in other means for transferring flowing fluid between the illustrated elements.

[0050] Figure 4 A cleaning device 400 is shown, which includes a device 408 for providing a fluid such as a first fluid 312. In one embodiment, the device 408 is operatively coupled to and / or includes, for example, a cleaning device 408. Figure 3The described containers, pumps, and / or valves. In one embodiment, device 408 is a pipe, tube, or other means for conveying a flowing fluid. In one embodiment, first device 408 includes a first fluid such as that described with reference to block 206. Thus, in one embodiment, first device 408 holds and / or delivers HF and DIW; DIW and HCl; or DIW and NH4OH in chemical cleaning apparatus 400.

[0051] Then, method 200 proceeds to block 208, wherein a second fluid comprising ozone and DIW is provided. Ozone is soluble in the DIW (e.g., fluid DIW). The second fluid may be provided at a temperature below room temperature. For example, in one embodiment, a second fluid with a temperature between approximately 15°C and approximately 20°C is provided. Note that the solubility of ozone in the DIW is based on the temperature and / or pH of the fluid (e.g., lower temperatures provide greater ozone solubility, acidic conditions provide greater ozone solubility). Therefore, the pH and / or temperature of the water and ozone mixture can be controlled to provide sufficient ozone solubility. In one embodiment, the DIW contains approximately 5 ppm to 25 ppm of ozone.

[0052] The second fluid can be kept in a container and supplied to the cleaning device using devices such as pipes or tubes with pumps, valves, etc. Figure 3 An exemplary embodiment of a fluid delivery system 300 having a second container 304 is provided. In one embodiment, the second container includes DIW and ozone. As described above, the second container 304 can be used to provide a second fluid at a temperature below room temperature. The fluid in the second container can be removed from the container by a pump 306. The flow rate of the fluid in the second container can be controlled by a valve 308. The second fluid 314 (e.g., ozone and DIW) is shown being delivered from container 304. The second fluid 314 being delivered can be held in a device such as a pipe or tube, or in other means for delivering flowing fluids.

[0053] Figure 4 A chemical cleaning apparatus 400 is shown, comprising a device 410 for providing a fluid such as the second fluid 314 described above. In one embodiment, the device 410 includes or is operatively coupled to a container, pump, and / or valve (such as referenced). Figure 3 (As described). In one embodiment, device 410 includes a conduit, pipe, or other means for conveying a flowing fluid. In one embodiment, second device 410 conveys and provides a second fluid as described with reference to block 208. Thus, in one embodiment, second device 410 holds and / or delivers DIW and ozone in cleaning device 400. Second device 410 may be used to provide a fluid at a reduced temperature (e.g., a second room temperature).

[0054] Method 200 then proceeds to block 210, in which the first fluid and the second fluid are mixed to provide a cleaning solution. In one embodiment, the first fluid and the second fluid are mixed in a mixing chamber. In one embodiment, the first fluid and the second fluid are mixed after being dispensed but before being introduced onto the target substrate. In one embodiment, the first fluid and the second fluid are mixed in short mixing cycles or periods, such that the mixed fluid is not “waiting” after bonding but is provided directly to the target substrate (as described below with reference to block 212). Short mixing cycles can provide advantages such as preventing and / or reducing ozone decay in acids / bases (e.g., in NH4OH).

[0055] Figure 3 An embodiment of a mixing chamber 310 is shown. In one embodiment, the mixing chamber 310 is a pipe or conduit coupled to a device having a first fluid 312 and a second fluid 314. In one embodiment, the first fluid 312 is provided in the first pipe / conduit, and the second fluid 314 is provided in the second pipe / conduit; these pipes / conduits are combined together to form a single pipe / conduit shown as chamber 310. In one embodiment, fluid flows through the mixing chamber 310 at a given flow rate (e.g., the fluid is not stationary in the chamber). A cleaning solution 316 (a mixture of the first fluid 312 and the second fluid 314) is discharged from the mixing chamber 310. The cleaning solution 316 may be substantially similar to the above reference. Figure 1 The cleaning solution described in box 104 of method 100.

[0056] Figure 4 An embodiment of mixing chamber 406 is shown. In one embodiment, mixing chamber 406 is a tube or conduit coupled to devices 408 and 410. In one embodiment, the first device 408 is a first tube / conduit and the second device 410 is a second tube / conduit; these tubes / conduits are combined together to form a single tube / conduit as chamber 406. In one embodiment, fluid flows through mixing chamber 406 at a given flow rate (e.g., the fluid is not stationary in the chamber) and exits from mixing chamber 406 through a nozzle. The dispensed cleaning solution 412 is a mixture of the fluids from the first device 408 and the second device 410. Cleaning solution 412 may be substantially similar to the above reference. Figure 1 The cleaning solution described in box 104 of method 100.

[0057] The first fluid of frame 206 and the second fluid of frame 208 can be mixed in a predetermined ratio to produce a cleaning solution. In one embodiment, the cleaning solution comprises at least one part acid and one part ozone. In one embodiment, the cleaning solution comprises one part acid, one part ozone, and more than 40 parts DIW. In yet another embodiment, the cleaning solution comprises one part acid, one part ozone, and approximately 50 parts DIW. In one embodiment, the cleaning solution comprises at least one part alkali and approximately eight (8) parts ozone. In yet another embodiment, the cleaning solution comprises one part alkali, approximately eight parts ozone, and approximately 60 parts DIW. Such as Figure 3 Valve 308 controls the amount and / or flow rate of the first fluid 312 and the second fluid 314 reaching the mixing chamber 310, thus controlling the composition of the cleaning solution. For example, Figure 3 A cleaning solution 316 (a mixture of a first fluid 312 and a second fluid 314) is shown being dispensed from a mixing chamber 310. The amounts of the first fluid 312 and the second fluid 314 can be controlled via a valve 308.

[0058] Then, method 200 can proceed to block 212, where a cleaning solution is sprayed onto the target substrate. A single-wafer spraying tool can be used to spray the cleaning solution onto the substrate. (See reference...) Figure 4 In this example, cleaning solution 412 is provided to wafer 404. Cleaning solution 412 can be provided by any number of nozzles.

[0059] The following process parameters are provided by way of example but are not intended to be limiting. In one embodiment, for example, chemical solution 412 may be sprayed onto target substrate 404 over time periods of approximately 20 seconds and approximately 80 seconds. In yet another embodiment, chemical solution 412 may be sprayed onto target substrate 404 over time periods of approximately 30 seconds and approximately 55 seconds. Target substrate 404 may be rotated while the chemical solution is being applied to its surface. In one embodiment, during spraying, substrate 404 may, for example, rotate at a speed of approximately 800 rpm.

[0060] Method 200 can be advanced to other processes, such as additional cleaning processes, DIW cleaning processes, drying processes, etc. In one embodiment, method 200 provides a first cleaning using a first cleaning solution of HF, DIW, and ozone, followed by a second cleaning using a second cleaning solution of NH4OH, DIW, and ozone, and then a third cleaning using a third cleaning solution of HCl, DIW, and ozone. However, other embodiments and other sequences are possible and are all included within the scope of this invention.

[0061] Now refer to Figure 5The flowchart illustrates a method 500 for cleaning a target substrate, such as a semiconductor substrate or a wafer. In one embodiment, method 500 is used to clean a target substrate having one or more fin structures disposed thereon. Note that while method 500 is performed on a target substrate having fin structures disposed thereon, the method is not limited thereto unless explicitly specified otherwise. For example, the process can also be applied to other processes such as wet silicon removal, wet metal removal, and / or other recognized uses.

[0062] Method 500 may be an embodiment including one or more steps of method 100 described above. Thus, the description of method 100 similarly applies to method 500. Similarly, Figure 4 and Figure 5 The components can also be applied to method 500.

[0063] Method 500 begins at block 502, wherein a substrate is provided. The substrate may be substantially similar to the one referenced above. Figure 1 The substrate described in block 102 of method 100. In one embodiment, the substrate is provided with a plurality of fin elements extending from a semiconductor substrate. The fin elements can be formed by appropriate processes such as photolithography and etching, thereby forming “fins” extending from the substrate. Various methods for forming fin elements are known in the art and can be applied here. In one embodiment, the substrate includes an active region (OD) on which a gate will subsequently be formed. In one embodiment, the substrate includes gate components disposed on the substrate, such as including a gate dielectric layer and / or a gate electrode layer. In one embodiment, the substrate may include components such as trenches formed by removing dummy gate components, such as those typically found in gate removal processes for forming metal gate structures.

[0064] Then, method 500 may proceed to block 504, wherein a substrate is provided to a cleaning tool. The substrate may be provided to a single-wafer cleaning tool. In one embodiment, the single-wafer cleaning tool may be used to support at least one 300nm wafer and a 400nm wafer. Figure 4 An embodiment of a single-wafer cleaning tool is shown.

[0065] Then, method 500 proceeds to block 506, where a heating process is performed. In one embodiment, the heating process involves heating the back side of the substrate provided in block 502. Heating the back side of the substrate can be used to increase the process temperature of the introduced cleaning solution (discussed below with reference to blocks 510 and / or 516). In some embodiments, block 506 occurs substantially simultaneously with (or consecutively with) blocks 510 and / or 516.

[0066] Again, the heating process is provided by heating the target substrate. In yet another embodiment, heating can be used to hold the target substrate on a stage to provide heat to the substrate. The heating can be applied directly to the back side of the substrate and increase the temperature of the surface of the target substrate used for cleaning (e.g., the opposite side). In one embodiment, back-side heating can be implemented between approximately 25°C and approximately 80°C. Heating the substrate can provide a process temperature for cleaning (see boxes 510 or 516) between approximately 2°C and approximately 80°C.

[0067] In one embodiment, a heating process is provided to heat the target substrate by using a thermal DIW provided to the back side of the target substrate. The thermal DIW can be used to control the process temperature of the cleaning process of blocks 510 and / or 516.

[0068] The heating process of frame 504 can be used to selectively control the etching rate of the material supplied by the cleaning solution provided through frames 508 and / or 514. For example, the etching rate of the material (e.g., silicon, metal) can be controlled by factors including process temperature. In one embodiment, the material etching rate is controlled by the flow and / or temperature of the DIW supplied to the back side of the target substrate. In other embodiments of method 500, the heating process for the wafer (and / or the cleaning solution discussed below) is omitted.

[0069] Then, method 500 proceeds to block 508, where a first cleaning solution is provided. Note that the term "solution" as used herein does not necessarily refer to a homogeneous mixture of any chemicals, but simply a mixture. In one embodiment, the first cleaning solution comprises hydrofluoric acid, ozone, and DIW. In another embodiment, the first cleaning solution comprises ammonium hydroxide (NH4OH) (an alkali), ozone, and DIW.

[0070] In one embodiment, similar to the above reference... Figure 3 and Figure 4 As described in method 200, a first cleaning solution is provided. For example, an ozone and DIW solution mixed with an acid (e.g., HF) can be prepared before being provided to the target substrate. In other embodiments, the cleaning solution can be mixed at any point in time before being provided to the target substrate. As another example, an ozone and DIW solution mixed with an alkali (e.g., NH4OH) can be prepared before being provided to the target substrate. In other embodiments, the cleaning solution can be mixed at any point in time before being provided to the target substrate.

[0071] In one embodiment, the first cleaning solution has an HF concentration between approximately 1% and approximately 500 ppm. In another embodiment, the first cleaning solution has an ozone concentration between approximately 500 ppm and approximately 1 ppm. In yet another embodiment, the first cleaning solution has an HF concentration between approximately 1% and approximately 500 ppm, an ozone concentration between approximately 500 ppm and approximately 1 ppm, and a residual concentration of DIW. In one embodiment, a buffer solution such as NH4F and / or a surfactant may be added to the first cleaning solution. Thus, in one embodiment, the first cleaning solution has an HF concentration between approximately 1% and approximately 500 ppm, an ozone concentration between approximately 500 ppm and approximately 1 ppm, and a residual concentration of DIW, surfactant, and / or buffer components.

[0072] In another embodiment, the first cleaning solution has an NH4OH concentration between approximately 10% and approximately 0.01%. In one embodiment, the first cleaning solution has an ozone concentration between approximately 500 ppm and approximately 1 ppm. Thus, in one embodiment, the first cleaning solution has an NH4OH concentration between approximately 10% and 0.01%, an ozone concentration between approximately 500 ppm and approximately 1000 ppm, and the remaining concentration is DIW.

[0073] Then, method 200 proceeds to block 510, where a first cleaning process is performed. A first cleaning solution may be sprayed onto the target substrate. A single-wafer spraying tool can be used to spray the first cleaning solution onto the substrate. (See reference...) Figure 4 In one example, cleaning solution 412 is provided to wafer 404. Any number of nozzles may be used to provide the cleaning solution. As described above, cleaning solution 412 may be (1) HF, ozone, DIW solution (including surfactants and / or buffers in certain embodiments) or (2) NH4OH, ozone, DIW solution.

[0074] As discussed with reference to box 506, a heating process can be performed such that the cleaning process temperature of box 506 is above room temperature. For example, the cleaning process temperature can be between approximately 22 and approximately 80 degrees Celsius. As described above, the process temperature can be provided by heating the back side of the target substrate.

[0075] In the embodiment of block 510, a first cleaning process is performed over a time period between approximately 30 seconds and approximately 60 seconds. In one embodiment, the first cleaning process includes providing a first cleaning solution comprising HF / O3 / DIW over a time period of approximately 30 seconds. In one embodiment, the first cleaning process includes providing a first cleaning solution comprising NH4OH / O3 / DIW over a time period of approximately 60 seconds.

[0076] Method 500 may proceed to block 512, wherein a DIW water rinse is performed after the first cleaning process. In one embodiment, the DIW is provided to the wafer during the rinsing process, which lasts for approximately 20 to approximately 30 seconds. In other embodiments, block 512 is omitted.

[0077] Method 500 then proceeds to block 514, where a second cleaning solution is provided. Again, note that the term "solution" as used herein does not necessarily refer to a homogeneous mixture of chemicals, but simply a mixture. In another embodiment, the second cleaning solution may include hydrofluoric acid, ozone, and DIW. In another embodiment, the second cleaning solution may be ammonium hydroxide (NH4OH), ozone, and DIW. The second cleaning solution may differ from the first cleaning solution described with reference to block 508.

[0078] In one embodiment, similar to the above reference... Figure 3 and Figure 4 As described in method 200, a second cleaning solution is provided. For example, an ozone and DIW solution mixed with an acid (e.g., HF) can be prepared before being provided to the target substrate. In other embodiments, the cleaning solution is mixed at any point in time before being provided to the target substrate. As another example, an ozone and DIW solution mixed with an alkali (e.g., NH4OH) can be prepared before being provided to the target substrate. In other embodiments, the cleaning solution is mixed at any point in time before being provided to the target substrate.

[0079] As described above, the second cleaning solution may include an acid. For example, in one embodiment, the second cleaning solution has an HF concentration between about 1% and about 500 ppm. In one embodiment, the second cleaning solution has an ozone concentration between about 500 ppm and about 1 ppm. Thus, in one embodiment, the second cleaning solution has an HF concentration between about 1% and about 500 ppm, an ozone concentration between about 500 ppm and about 1 ppm, and a residual concentration of DIW. In one embodiment, a buffer solution such as NH4F and / or a surfactant may be added to the second cleaning solution. Thus, in one embodiment, the second cleaning solution has an HF concentration between about 1% and about 500 ppm, an ozone concentration between about 500 ppm and about 1 ppm, and a residual concentration of DIW, surfactant, and / or buffer components.

[0080] As described above, the second cleaning solution may include an alkali. For example, in one embodiment, the second cleaning solution has an NH4OH concentration between about 10% and about 0.01% by weight. In one embodiment, the second cleaning solution has an ozone concentration between about 500 ppm and about 1 ppm. In another embodiment, the second cleaning solution has an NH4OH concentration between about 10% and about 0.01%, an ozone concentration between about 500 ppm and about 1000 ppm, and the remaining concentration of DIW.

[0081] In box 514, note that the second cleaning solution differs from the first cleaning solution. For example, the first cleaning solution may include an acid such as HF, while the second cleaning solution includes a base such as NH4OH. In another embodiment, the first cleaning solution may include a base such as NH4OH, while the second cleaning solution may include an acid such as HF.

[0082] Then, method 500 proceeds to block 516, where a second cleaning process is performed. The second cleaning solution may be sprayed onto the target substrate. A single-wafer spraying tool can be used to spray the second cleaning solution onto the substrate. In one embodiment, the second cleaning process is performed in situ with the first cleaning solution of block 508 and / or the cleaning process of block 512. See also... Figure 4 In one example, cleaning solution 412 is provided to wafer 404. Any number of nozzles may be used to provide the cleaning solution. As described above, cleaning solution 412 may be a second cleaning solution of method 500 and may be (1) HF, ozone, DIW solution (including surfactants and / or buffers in certain embodiments) or (2) NH4OH, ozone, DIW solution.

[0083] As described above with reference to box 506, a heating process can be performed, wherein the cleaning process temperature of box 516 is above room temperature. For example, the cleaning process temperature can be between approximately 22 degrees Celsius and approximately 80 degrees Celsius. As described above, the process temperature can be provided by heating the back side of the target substrate. The process temperature of box 516 and the process temperature of box 510 can be different. In one embodiment, the process temperatures of boxes 516 and 510 are determined based on chemical composition, desired etching rate, and / or other factors. Therefore, since the chemical compositions of boxes 516 and 510 differ, it is desirable to vary the process temperature.

[0084] In the embodiment of block 516, a second cleaning process is performed over time periods of approximately 30 seconds and approximately 60 seconds. In one embodiment, the second cleaning process includes providing a second cleaning solution comprising HF / O3 / DIW over a time period of approximately 30 seconds. In one embodiment, the second cleaning process includes providing a second cleaning solution comprising NH4OH / O3 / DIW over a time period of approximately 60 seconds.

[0085] Therefore, in one embodiment, method 500 provides a first cleaning solution comprising HF / O3 / DIW in block 508 and a second cleaning solution comprising NH4OH / O3 / DIW in block 514. In yet another embodiment, HF / O3 / DIW is provided in block 510 for a period of approximately 30 seconds, while NH4OH / O3 / DIW is provided in block 514 for a period of approximately 60 seconds.

[0086] Method 500 may proceed to block 518, wherein a DIW water rinse is performed after the first cleaning process. In one embodiment, the DIW is provided to the wafer during a rinse period of approximately 20 seconds to approximately 30 seconds. In one embodiment, the DIW rinse at block 518 is approximately 30 seconds. In yet another embodiment, the DIW rinse at block 512 is approximately 20 seconds. In embodiments, block 518 may be omitted.

[0087] In an embodiment of method 500, the method may return to block 508, whereby the first cleaning process is performed again. For example, in one embodiment, the first cleaning solution comprises HF / O3 / DIW, and the second cleaning solution comprises NH4OH / O3 / DIW, and method 500 provides a process of providing the first cleaning solution, followed by the second cleaning solution, and repeating the process. In yet another embodiment, the process is repeated twice.

[0088] Method 500 may proceed to other steps known in the art, including a drying process. In one embodiment, after the steps of method 500, a component is formed on the surface on which the first cleaning process and the second cleaning process were performed. Examples of components subsequently formed on the cleaned surface include, but are not limited to, gate structures or metal layers of gate structures (such as in a gate replacement process).

[0089] In summary, the methods and devices disclosed herein provide cleaning solutions, cleaning methods, and apparatus for cleaning target substrates (such as semiconductor substrates or wafers). Thus, embodiments of the present invention can provide advantages over methods known in the art. Exemplary advantages include cost savings and / or reduced environmental impact from the use of chemicals in semiconductor device manufacturing processes. For example, conventional cleaning typically uses H2O2 as a component of cleaning chemicals as an oxidant for particle removal, metal ion removal, and / or surface oxidation. The use of H2O2 results in the waste of unreacted chemicals in the process, thus incurring environmental and monetary costs. In one embodiment, the cleaning solution of the present invention omits H2O2. It should be understood that the different embodiments disclosed herein provide different content and they can be changed, substituted, and modified in various ways without departing from the spirit and scope of the invention.

[0090] Therefore, the present invention provides various exemplary embodiments. In one embodiment, a method for providing a semiconductor substrate is described. The method further includes cleaning the semiconductor substrate using ozone and a mixture of at least one of an acid and a base.

[0091] In another embodiment, ozone is dissolved in water, providing a temperature of less than or equal to approximately 20 degrees Celsius. Cleaning may further include heating the semiconductor substrate while providing at least one of an acid and a alkali, along with ozone, to the semiconductor substrate. In embodiments, the method may further include rinsing the semiconductor substrate with deionized water after cleaning.

[0092] In another embodiment, the mixture of at least one of the acid and base and ozone comprises a base (NH4OH). In another embodiment, the mixture comprises an acid (HCl). In yet another embodiment, the mixture comprises an acid (HF). In one embodiment, the mixture of at least one of the acid and base and ozone comprises at least one part ozone for each part of the at least one of the acid and base. In yet another embodiment, the mixture of at least one of the acid and base and ozone further comprises at least 40 parts deionized water for each part of the at least one of the acid and base.

[0093] In another broad form of the invention, a method for cleaning a semiconductor substrate is provided. The method includes providing a first device for holding a fluid. A first mixture of ozone and water is delivered to the first device. A second device for holding the fluid is provided. A mixture of at least one of an acid and a base and water is delivered to the second device. A first mixture is discharged from the first device, and a second mixture is discharged from the second device. The discharged first and second mixtures form a cleaning solution. The cleaning solution is provided onto the surface of the semiconductor substrate.

[0094] In another embodiment of the above method, a stage is provided for a semiconductor substrate; the stage can be used to heat the semiconductor substrate. In one embodiment, the semiconductor substrate is heated to between approximately 20 degrees Celsius and 60 degrees Celsius. The stage can also rotate the semiconductor substrate while applying a cleaning solution to its surface.

[0095] The first device (holding the first mixture) may be a first conduit, and the second device may be a second conduit. The first and second conduits may be combined to form a single conduit in which the mixing of the first and second mixtures is performed. The mixing of the first and second mixtures to form a cleaning solution may be performed substantially simultaneously with the spraying of a chemical solution to provide a cleaning solution to the surface of a semiconductor substrate.

[0096] In another embodiment, a method of manufacturing a semiconductor substrate is provided, comprising forming a first component on the surface of a semiconductor wafer. A first cleaning mixture (comprising ozone and acid) is sprayed onto the first component on the surface. After spraying the first cleaning mixture is stopped, a second cleaning mixture (comprising ozone and NH4OH) is sprayed onto a second component on the surface. In one embodiment, the acid in the first cleaning mixture is HCl.

[0097] In another embodiment, after blasting the second cleaning mixture, the method proceeds to a step including cleaning and drying the semiconductor wafer. The blasting process may include blasting only a single wafer at a given point in time. In one embodiment, after blasting the first cleaning mixture, the method includes cleaning and drying the semiconductor wafer and forming a second part on the wafer surface before blasting the second cleaning mixture.

[0098] In another broad embodiment provided herein, a substrate is provided. A first cleaning of the semiconductor substrate is performed using a first cleaning solution comprising one of ozone, an acid, and a base, and water. The semiconductor substrate is then rinsed after the first cleaning. After rinsing, a second cleaning of the semiconductor substrate is performed using a second cleaning solution comprising ozone, water, and another of an acid and a base.

[0099] In another embodiment, the method for cleaning a semiconductor substrate includes providing a first cleaning solution comprising HF, ozone, and water to the surface of the semiconductor substrate. After providing the first cleaning solution, the semiconductor substrate is cleaned, and then, after cleaning, a second cleaning solution comprising NH4OH, ozone, and water is provided to the surface of the semiconductor substrate.

[0100] In yet another embodiment, providing a first cleaning solution comprising HF, ozone, and water includes providing HF at a concentration between approximately 1% and approximately 500 parts per million (ppm) and providing ozone at a concentration between approximately 500 ppm and 1 ppm. In yet another embodiment, providing a second cleaning solution comprising NH4OH, ozone, and water includes providing NH4OH at a concentration between approximately 10% and approximately 0.01% and providing ozone at a concentration between approximately 500 ppm and 1 ppm.

[0101] In yet another broad embodiment, a method of manufacturing a semiconductor device includes forming a first component on the surface of a semiconductor wafer. (In one example, the component may be a gate component.) A first cleaning mixture is sprayed onto the first component on the surface, wherein the first cleaning mixture comprises ozone and HF. After the spraying of the first cleaning mixture is stopped, a second cleaning mixture is sprayed onto the first component on the surface. The second cleaning mixture comprises ozone and NH4OH. In one embodiment, the second cleaning mixture is sprayed in situ along with the spraying of the first cleaning mixture, for example, in situ in a single-wafer cleaning tool such as described above.

Claims

1. A method for cleaning a semiconductor substrate, comprising: A semiconductor substrate is provided, and a first channel, a second channel, and a hybrid channel connected below the first channel and the second channel are located above the semiconductor substrate; A first fluid is supplied to one of the first and second pipes and discharged from the first pipe toward the semiconductor substrate, wherein the first fluid comprises one of an acid and a base, and water; A second fluid, different from the first fluid and below room temperature, is supplied to another of the first and second pipes and discharged towards the semiconductor substrate through the other pipe, wherein the second fluid below room temperature includes ozone and water, the first and second pipes extend vertically so that the first and second fluids flow vertically downward into the mixing pipe, and the first and second fluids flow through the mixing pipe at a given speed without remaining stationary in the mixing pipe; After the first fluid and the second fluid are discharged and before the first fluid and the second fluid fall onto the semiconductor substrate, the discharged first fluid and the second fluid are mixed in the mixing pipe to form a first cleaning mixture. The mixed first cleaning mixture is then provided to the semiconductor substrate to perform a first cleaning of the semiconductor substrate, while simultaneously heating the back side of the semiconductor substrate using hot deionized water supplied to the back side of the semiconductor substrate. The first cleaning mixture includes one of an acid and a base, ozone, and water, wherein the ozone in the first cleaning mixture is used as a surface oxidant for the semiconductor substrate in the first cleaning. After the first cleaning, the semiconductor substrate is cleaned; and After cleaning, a second cleaning of the semiconductor substrate is performed using a second cleaning mixture, while simultaneously heating the back side of the semiconductor substrate using the hot deionized water supplied to the back side of the semiconductor substrate, wherein the second cleaning mixture comprises another of an acid and a base, ozone, and water; The first cleaning and the second cleaning are used to etch material from the semiconductor substrate, and the etching rate of the material is controlled by the flow and / or temperature of the hot deionized water.

2. The method for cleaning a semiconductor substrate according to claim 1, wherein, The first cleaning mixture includes an acid, which includes HF.

3. The method for cleaning a semiconductor substrate according to claim 1, wherein, The second cleaning mixture includes an alkali, which includes NH4OH.

4. The method for cleaning a semiconductor substrate according to claim 1, wherein, The first cleaning mixture includes an alkali, which includes NH4OH.

5. The method for cleaning a semiconductor substrate according to claim 4, wherein, The second cleaning mixture includes an acid, which includes HF.

6. The method for cleaning a semiconductor substrate according to claim 1, wherein, The semiconductor substrate has multiple fin structures.

7. The method for cleaning a semiconductor substrate according to claim 1, further comprising: After the second cleaning, the semiconductor substrate is cleaned.

8. The method for cleaning a semiconductor substrate according to claim 1, further comprising: After the second cleaning, the first cleaning is performed again using the first cleaning mixture.

9. A method for cleaning a semiconductor substrate, comprising: A semiconductor substrate is provided, and a first channel, a second channel, and a hybrid channel connected below the first channel and the second channel are located above the semiconductor substrate; A first fluid is supplied to one of the first and second pipes and discharged from the first pipe toward the semiconductor substrate, wherein the first fluid comprises one of an acid and a base, and water; A second fluid, different from the first fluid and below room temperature, is supplied to another of the first and second pipes and discharged towards the semiconductor substrate through the other pipe, wherein the second fluid below room temperature includes ozone and water, the first and second pipes extend vertically so that the first and second fluids flow vertically downward into the mixing pipe, and the first and second fluids flow through the mixing pipe at a given speed without remaining stationary in the mixing pipe; After the first fluid and the second fluid are discharged and before the first fluid and the second fluid fall onto the semiconductor substrate, the discharged first fluid and the second fluid are mixed in the mixing channel to form a first cleaning solution. The mixed first cleaning solution is then provided on the surface of the semiconductor substrate while the back side of the semiconductor substrate is heated using hot deionized water provided to the back side of the semiconductor substrate. The first cleaning solution includes HF, ozone and water, and the ozone in the first cleaning solution is used as a surface oxidant for the semiconductor substrate in the first cleaning. After the first cleaning solution is provided, the semiconductor substrate is cleaned; After cleaning, a second cleaning solution comprising NH4OH, ozone, and water is provided on the surface of the semiconductor substrate, while the back side of the semiconductor substrate is heated using the hot deionized water provided to the back side of the semiconductor substrate. The first cleaning solution and the second cleaning solution are used to etch materials from the semiconductor substrate, and the etching rate of the materials is controlled by the flow and / or temperature of the hot deionized water.

10. The method for cleaning a semiconductor substrate according to claim 9, further comprising: During the provision of the first cleaning solution and the provision of the second cleaning solution, the back side of the semiconductor substrate, which is opposite to the surface of the semiconductor substrate, is heated.

11. The method for cleaning a semiconductor substrate according to claim 9, wherein, The first cleaning solution is provided for a duration of 30 seconds, and the second cleaning solution is provided for a duration of 60 seconds.

12. The method for cleaning a semiconductor substrate according to claim 9, wherein, Providing the first cleaning solution further includes providing at least one of NH4F and a surfactant.

13. The method for cleaning a semiconductor substrate according to claim 9, further comprising: After the second cleaning solution is provided, the first cleaning solution, comprising HF, ozone and water, is provided a second time on the surface of the semiconductor substrate. Subsequently, a second cleaning solution comprising NH4OH, ozone, and water is provided a second time on the surface of the semiconductor substrate.

14. The method for cleaning a semiconductor substrate according to claim 9, wherein, The first cleaning solution, comprising HF, ozone, and water, includes: providing HF between 1% and 500 ppm and providing ozone between 500 ppm and 1 ppm.

15. The method for cleaning a semiconductor substrate according to claim 9, wherein, The second cleaning solution, comprising NH4OH, ozone, and water, includes: providing NH4OH at a concentration between 10% and 0.01% and providing ozone at a concentration between 500 ppm and 1 ppm.

16. A method for manufacturing a semiconductor device, comprising: A first component is formed on the surface of a semiconductor wafer; A first channel, a second channel, and a hybrid channel connected below the first and second channels are provided, located above a semiconductor substrate; A first fluid is supplied to one of the first and second pipes and discharged from the first pipe toward the semiconductor substrate, wherein the first fluid comprises one of an acid and a base, and water; A second fluid, different from the first fluid and below room temperature, is supplied to another of the first and second pipes and discharged towards the semiconductor substrate through the other pipe, wherein the second fluid below room temperature includes ozone and water, the first and second pipes extend vertically so that the first and second fluids flow vertically downward into the mixing pipe, and the first and second fluids flow through the mixing pipe at a given speed without remaining stationary in the mixing pipe; After the first fluid and the second fluid are discharged and before they fall onto the semiconductor substrate, the discharged first fluid and the second fluid are mixed in the mixing channel to form a first cleaning mixture. The mixed first cleaning mixture is then sprayed onto the first component on the surface, while simultaneously heating the back side of the semiconductor substrate using hot deionized water supplied to it. The first cleaning mixture comprises ozone, HF, and water, wherein the ozone in the first cleaning mixture sprayed onto the surface acts as a surface oxidant for cleaning the semiconductor wafer. After stopping the spraying of the first cleaning mixture, a second cleaning mixture is sprayed onto the first component on the surface, while simultaneously heating the back side of the semiconductor substrate using the hot deionized water supplied to the back side of the semiconductor substrate. The second cleaning mixture comprises ozone and NH4OH, wherein the second cleaning mixture is sprayed in situ alongside the spraying of the first cleaning mixture. The first cleaning mixture and the second cleaning mixture are used to etch material from the semiconductor substrate, and the etching rate of the material is controlled by the flow and / or temperature of the hot deionized water.

17. The method of manufacturing a semiconductor device according to claim 16, further comprising: During the spraying of the first cleaning mixture, the semiconductor wafer is heated to a first temperature; as well as During the spraying of the second cleaning mixture, the semiconductor wafer is heated to a second temperature, which is different from the first temperature.

18. The method of manufacturing a semiconductor device according to claim 16, wherein, The semiconductor substrate has multiple fin structures.

19. The method of manufacturing a semiconductor device according to claim 16, wherein, The first cleaning mixture comprises HF between 1% and 500 ppm and ozone between 500 ppm and 1 ppm.

20. The method of manufacturing a semiconductor device according to claim 16, wherein, The second cleaning mixture comprises between 10% and 0.01% NH4OH and between 500 ppm and 1 ppm ozone.

Images