Substrate processing apparatus

Abstract

A substrate processing apparatus having an improved exhaust structure includes a grounded conductive extension configured to prevent the generation of a parasitic plasma in an exhaust space connected to a reaction space. The substrate processing apparatus prevents the generation of a parasitic plasma in areas other than the reaction space, such as the reaction space. As a result, power loss can be prevented and stable plasma processing can be achieved.

Description

[0001] Cross-references to related applications

[0002] This application claims the benefit of U.S. Provisional Patent Application No. 62 / 880,637, filed July 30, 2019, with the United States Patent and Trademark Office, the entire disclosure of which is incorporated herein by reference. Technical Field

[0003] One or more embodiments relate to a substrate processing apparatus, and more specifically, to a substrate processing apparatus having an improved venting structure. Background Technology

[0004] In semiconductor deposition processes, plasma processing can be performed at low temperatures compared to thermal processing, thus reducing thermal shock to semiconductor devices. Furthermore, reduced thermal shock to semiconductor deposition equipment improves equipment durability and component lifespan; therefore, plasma processing is used in many processes.

[0005] In plasma deposition processes, plasma is generated by applying RF power to the reactive gas supplied to the reaction space to ionize the reactive gas. The ionized reactive gas is activated to react with the substrate, thereby forming a thin film on the substrate. Korean Patent Publication No. 10-2019-0032077 and Korean Patent No. 10-1680379 disclose the above-mentioned plasma deposition process.

[0006] Korean Patent Publication No. 10-2019-0032077 discloses an atomic layer deposition system as a deposition process using plasma. Specifically, the atomic layer deposition system disclosed in this document has a structure that expels gas from the reaction chamber via a pump connected to a pump tube.

[0007] To maximize the efficiency of plasma processing, plasma needs to be formed on the substrate within the reaction space. However, parasitic plasma generated in areas outside the reaction space, such as in exhaust lines, can reduce the efficiency of plasma processing within the reaction space. Summary of the Invention

[0008] One or more embodiments include a substrate processing apparatus that can prevent the generation of parasitic plasma in areas outside the reaction space, such as in the exhaust space.

[0009] One or more embodiments include a substrate processing apparatus with an exhaust structure that achieves efficient exhaust by reducing the volume of the exhaust space.

[0010] Other aspects will be set forth in part in the description which follows, and will be apparent in part from the description, or may be learned by practicing the embodiments presented in this disclosure.

[0011] According to one or more embodiments, a substrate processing apparatus includes a substrate support unit configured to support a substrate, a process unit disposed above the substrate support unit, wherein a reaction space is defined between the substrate support unit and the process unit, an exhaust unit providing an exhaust space connected to the reaction space, and a conductive extension surrounding at least a portion of the exhaust space.

[0012] The conductive extension can be configured to prevent a parasitic plasma from being generated in the exhaust space.

[0013] The conductive extension can be grounded.

[0014] The conductive extension can have a circumference of a shape corresponding to a shape of the substrate.

[0015] The exhaust unit can include a barrier wall disposed between the reaction space and the exhaust space, and a first surface of the barrier wall can define the reaction space, and a second surface of the barrier wall can define the exhaust space.

[0016] The conductive extension can extend along the second surface of the barrier wall.

[0017] The conductive extension can be in contact with the barrier wall.

[0018] The substrate processing apparatus can further include a support portion supporting the process unit and the exhaust unit, wherein the exhaust unit is disposed between the process unit and the support portion.

[0019] The process unit can function as a first cover defining an upper surface of the reaction space, and the exhaust unit can function as a second cover defining a side surface of the reaction space.

[0020] The exhaust unit can include a barrier wall disposed between the reaction space and the exhaust space, an outer wall disposed in parallel to the barrier wall and in contact with the support portion, and a connection wall connecting the barrier wall and the outer wall and providing a contact surface with the process unit, and the conductive extension extends along the barrier wall, the connection wall, the outer wall, and the support portion.

[0021] The conductive extension can be electrically connected to the support portion to allow the conductive extension and the support portion to have the same electric potential.

[0022] The substrate processing apparatus can further include a conductive ring in contact with the conductive extension.

[0023] The support portion can include a recess, and the conductive ring can be accommodated in the recess.

[0024] The substrate processing apparatus can further include a conductive ring electrically connected to the conductive extension.

[0025] The conductive ring can include an elastomer.

[0026] The substrate processing apparatus can further include an exhaust path connected to the exhaust space, wherein the electrically conductive extension includes an opening providing a connection between the exhaust space and the exhaust path.

[0027] The electrically conductive extension can include a first portion and a second portion, the opening being between them, and the first portion and the second portion can be separated from each other.

[0028] The electrically conductive extension can extend in the form of an open loop, wherein at least portions of the electrically conductive extension can be separated from each other.

[0029] According to one or more embodiments, a substrate processing apparatus includes a substrate support unit, a first cover disposed on the substrate support unit and including at least one processing unit, a second cover disposed below the first cover and including a barrier wall, and an electrically conductive extension extending from the barrier wall and in contact with the second cover, wherein a reaction space is defined by an outer surface of the barrier wall, an upper surface of the substrate support unit, and a lower surface of the first cover, the second cover includes an exhaust space connected to the reaction space, and the electrically conductive extension is grounded and extends from an inner surface of the barrier wall to surround at least a portion of the exhaust space.

[0030] According to one or more embodiments, a substrate processing apparatus includes a reaction space and an exhaust space connected to the reaction space, the substrate processing apparatus including an electrically conductive extension that is grounded, disposed in the exhaust space, and configured to prevent a parasitic plasma from being generated in the exhaust space. BRIEF DESCRIPTION OF DRAWINGS

[0031] These and / or other aspects will become apparent and more readily appreciated from the following description of embodiments, taken in conjunction with the accompanying drawings in which:

[0032] Figure 1 and 2 A substrate processing apparatus according to an embodiment is schematically illustrated;

[0033] Figure 3 A substrate processing apparatus according to another embodiment is schematically illustrated;

[0034] Figure 4 and 5 A substrate processing apparatus according to an embodiment is schematically illustrated;

[0035] Figure 6 and 7 is a perspective view showing an exhaust duct and an inner cover separated from each other in a substrate processing apparatus according to an embodiment;

[0036] Figure 8 is a perspective view showing an exhaust duct, an inner cover, and an electrically conductive ring separated from each other in a substrate processing apparatus according to an embodiment;

[0037] Figures 9 to 11 A substrate processing apparatus according to some embodiments is schematically illustrated; and

[0038] Figures 12 to 14 A substrate processing apparatus according to an embodiment is schematically shown. Detailed Implementation

[0039] Reference will now be made in detail to embodiments, examples of which are shown in the accompanying drawings, wherein the same reference numerals always denote the same elements. In this respect, the embodiments may take different forms and should not be construed as limited to the description set forth herein. Therefore, the embodiments described below are intended to explain various aspects of this specification only by referring to the accompanying drawings.

[0040] The terminology used in this specification is for explaining particular embodiments and not for limiting this disclosure. Therefore, unless explicitly stated otherwise in the context, expressions used in the singular form herein include their plural forms. Similarly, terms such as “comprising” or “including” are to be interpreted as referring to a feature, quantity, step, operation, element, or combination thereof, but are not to be interpreted as excluding the possibility of the presence or addition of one or more other features, quantities, steps, operations, elements, or combinations thereof. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items.

[0041] It will be understood that although the terms first, second, third, etc., may be used herein to describe various elements, components, regions, layers, and / or portions, these elements, components, regions, layers, and / or portions should not be limited by these terms. These terms are used only to distinguish individual elements, components, regions, layers, or portions. Therefore, without departing from the teachings of the embodiments, the first element, component, region, layer, or portion discussed below may be referred to as the second element, component, region, layer, or portion.

[0042] Embodiments of this disclosure are described in detail below with reference to the accompanying drawings. In the drawings, the illustrated shapes may be modified according to, for example, manufacturing techniques and / or tolerances. Therefore, embodiments of this disclosure should not be construed as limited to the specific shapes of the components described herein, and may include, for example, changes in shape that occur during manufacturing.

[0043] Figure 1 and 2 A substrate processing apparatus according to an embodiment is schematically shown. Figure 1 The substrate processing apparatus and a portion thereof (a portion of the exhaust unit 120 in which no opening is formed) are shown. Figure 2A substrate processing apparatus and another portion of the substrate processing apparatus (a portion of the exhaust unit 120 in which the opening OP is formed) are shown.

[0044] Referring to Figure 1 and 2 The substrate processing apparatus can include a partition wall 100, a substrate support unit 150, a processing unit 110, an exhaust unit 120, and a conductive extension 130. A reaction space 51 and an exhaust space 55 connected to the reaction space 51 can be formed in the substrate processing apparatus.

[0045] The partition wall 100, which is a chamber for accommodating the substrate support unit 150, can be referred to as a chamber body. In an embodiment, a reactor including the reaction space 51 can be referred to as an inner chamber, and the overall structure of the substrate processing apparatus surrounding a plurality of reactors (e.g., four reactors) can be referred to as an outer chamber. The exhaust line 18 can be disposed inside the partition wall 100. In some embodiments, the exhaust line 18 can be formed to extend along the inside of the sidewall of the partition wall 100. In an embodiment, the substrate processing apparatus can include a first surface and a second surface adjacent to the first surface, and the exhaust line 18 can extend along an edge between the first surface and the second surface. In another embodiment, the exhaust line 18 can extend along the inside of the lower wall of the partition wall 100.

[0046] The processing unit 110 can be disposed above the substrate support unit 150 configured to support a substrate. The reaction space 51 can be defined between the substrate support unit 150 and the processing unit 110. The processing unit 110 can function as a first cover for defining an upper surface of the reaction space 51. In other words, the first cover disposed above the substrate support unit 150 can include at least one processing unit 110.

[0047] The processing unit 110 can include a member that performs an appropriate function based on a function of the substrate processing apparatus. For example, when the substrate processing apparatus performs a deposition function, the processing unit 110 can include a reaction material supply portion, such as a showerhead assembly. In another embodiment, when the reactor performs a polishing function, the processing unit 110 can include a polishing pad.

[0048] The processing unit 110 can be a conductor and can function as an electrode for generating plasma. In other words, the processing unit 110 can function as an electrode for generating plasma. In the following description, the processing unit 110 of the above-described type (the processing unit 110 functions as an electrode) can be referred to as a gas supply electrode.

[0049] The substrate support unit 150 can be configured to provide an area on which an object (not shown) to be processed such as a semiconductor or display substrate is placed. The substrate support unit 150 can be supported by a support portion (not shown) capable of moving up and down and rotating. In addition, the substrate support unit 150 can be a conductor, and can be used as a counter electrode of a gas supply electrode for generating plasma.

[0050] The exhaust unit 120 can be disposed between the processing unit 110 and the support portion TLD. The exhaust unit 120 can extend to surround the reaction space 51. The exhaust unit 120 can be implemented by a non-conductive material, for example, an insulating material. In contrast, the support portion TLD can be implemented by a conductive material, for example, a conductor. Accordingly, a potential difference can be formed between the exhaust unit 120 disposed between the processing unit 110 serving as an electrode and the support portion TLD implemented by a conductor and the exhaust space 55 in the exhaust unit 120. The potential difference can cause a parasitic plasma, and as described below, the above-described potential difference can be canceled due to the introduction of the conductive extension portion 130 into the exhaust unit 120, and thus generation of the parasitic plasma can be prevented.

[0051] In an embodiment, the exhaust unit 120 can serve as a second cover that defines a side surface of the reaction space 51. The second cover including the exhaust unit 120 can include the exhaust space 55 connected to the reaction space 51. Accordingly, the exhaust unit 120 can provide the exhaust space 55. In addition, the exhaust unit 120 can provide a space for accommodating the processing unit 110. When the processing unit 110 is accommodated in the space, the processing unit 110 can be in contact with the exhaust unit 120.

[0052] The exhaust unit 120 can include a barrier wall W disposed between the reaction space 51 and the exhaust space 55. A first surface, for example, an outer surface, of the barrier wall W can define the reaction space 51, and a second surface, that is, an inner surface as a surface opposite to the first surface, of the barrier wall W can define the exhaust space 55. For example, the reaction space 51 can be defined by the first surface of the barrier wall W, the upper surface of the substrate support unit 150, and the lower surface of the processing unit 110 as the first cover. In other words, the side portion of the reaction space 51 can be limited by the barrier wall W of the exhaust unit 120.

[0053] The exhaust unit 120 can provide a portion of a space for processing an object to be processed. For example, when the substrate processing apparatus performs a deposition function, a reaction space 51 for deposition can be defined by the exhaust unit 120. In addition, the exhaust space 55 can be defined in the exhaust unit 120.

[0054] The conductive extension 130 can be configured to prevent the generation of a parasitic plasma in the exhaust space 55. For example, the conductive extension 130 can extend around at least a portion of the exhaust space 55, or can be grounded. Accordingly, the exhaust space 55 can be surrounded by the conductive extension 130, and thus, the generation of a parasitic plasma in the exhaust space 55 can be prevented.

[0055] The conductive extension 130 can extend from an inner surface of the exhaust space 55. The conductive extension 130 can extend from the barrier wall W. Further, the conductive extension 130 can be disposed in contact with the exhaust unit 120 as a second cover. As a detailed example, the conductive extension 130 can be in contact with a second surface, i.e., an inner surface, of the barrier wall W defining the exhaust space 55, and the conductive extension 130 can extend along the second surface.

[0056] In an example, the exhaust unit 120 can include a connection wall C and an outer wall O extending from the barrier wall W. The outer wall O of the exhaust unit 120 can be arranged in parallel to the barrier wall W, and can be in contact with the support portion TLD. The connection wall C of the exhaust unit 120 can extend to connect the barrier wall W to the outer wall O. The connection wall C can provide a contact surface to the process unit 110. The process unit 110 as a first cover and the exhaust unit 120 as a second cover can be in contact with each other through the contact surface.

[0057] The conductive extension 130 can extend along the barrier wall W, the connection wall C, and the outer wall O of the exhaust unit 120. In other words, as shown in FIG. 1, the conductive extension 130 can extend to completely surround the exhaust space 55, except for a gap E adjacent to the barrier wall W of the connection reaction space 51 and the exhaust space 55 in a first portion of the exhaust unit 120. Figure 2 The conductive extension 130 formed as described above can be disposed between the center of the exhaust space 55 and the exhaust unit 120. In another embodiment, one surface of the conductive extension 130 disposed between the center of the exhaust space 55 and the exhaust unit 120 can be in contact with the exhaust unit 120.

[0058] In an alternative embodiment, the conductive extension 130 can extend along the barrier wall W, the connection wall C, the outer wall O, and the support portion TLD. In other words, the conductive extension 130 can extend from the exhaust unit 120 toward the support portion TLD. Accordingly, the conductive extension 130 can be in contact with the support portion TLD. The conductive extension 130 can be electrically connected to the support portion TLD, and thus, the conductive extension 130 and the support portion TLD can have the same electric potential. For example, when the support portion TLD is grounded, the conductive extension 130 can also be grounded.

[0059] The conductive extension 130 can extend around a portion of the exhaust space 55 in the second portion of the exhaust unit 120. For example, the conductive extension 130 can include an opening that provides a communication passage between the exhaust space 55 and the exhaust path. In an example, the opening can be implemented in the form of a groove. In another example, the opening can be implemented in the form of a hole. In another example, the conductive extension 130 can have a first portion and a second portion with an opening therebetween, and the opening can be formed such that the first portion and the second portion are separated from each other, i.e., the conductive extension 130 has a cutout shape. In this case, the conductive extension 130 can extend in the form of an open loop in which at least a portion of the conductive extension 130 is separated therefrom.

[0060] The conductive extension 130 can extend to have a circumference corresponding to a shape of the substrate. In this case, a first area defined by a circumference of the barrier wall W formed as the conductive extension 130 can be greater than a second area defined by the substrate. Also, a third area defined by a circumference of the outer wall O formed as the conductive extension 130 can be greater than the first area defined by the barrier wall W and the second area defined by the substrate.

[0061] For example, when the substrate is a circular substrate, the barrier wall W of the conductive extension 130 can also extend to have a shape of a first circle. Also, the outer wall O of the conductive extension 130 can also extend to have a shape of a second circle. In this case, a distance from a center of the reaction space 51 to the barrier wall W, i.e., a radius of the first circle, can be greater than a radius of the substrate. Also, a distance from the center of the reaction space 51 to the outer wall O, i.e., a radius of the second circle, can be greater than the radius of the first circle.

[0062] In an optional embodiment, the substrate processing apparatus can further include a conductive ring 12. The conductive ring 12 can be electrically connected to the conductive extension 130. The conductive ring 12 can be disposed to contact the conductive extension 130. For example, the conductive ring 12 can be disposed to contact the conductive extension 130 and the support portion TLD between the conductive extension 130 and the support portion TLD. Accordingly, the conductive extension 130 can be electrically connected to the support portion TLD via the conductive ring 12. Accordingly, when the support portion TLD is grounded, the conductive extension 130 can also be grounded.

[0063] In an optional embodiment, the conductive ring 12 can include an elastic body. In an example, the elastic body can be configured to have elasticity in a direction, e.g., a vertical direction, extending from the conductive extension 130 to the support portion TLD. In another example, as shown, the support portion TLD can include a groove, and the conductive ring 12 can be disposed by being accommodated in the groove. Figure 2

[0064] ​The support portion TLD can support the process unit 110 and the exhaust unit 120 by being in contact with the exhaust unit 120. The support portion TLD can be supported by the partition wall 100. In this way, the support portion TLD can support the process unit 110 as a first lid and the exhaust unit 120 as a second lid, and the support portion TLD can function as a top lid that covers the outside chamber by being supported by the partition wall 100.

[0065] The support portion TLD can be disposed between the partition wall 100 and the exhaust port 13. The support portion TLD can include a path P of the exhaust line 18 connecting the exhaust port 13 and the partition wall 100. In an embodiment, a cross-sectional area of the path P and a cross-sectional area of the exhaust line 18 can be substantially the same. For example, when the path P and the exhaust line 18 are formed in a circular shape, a diameter of the path P can be the same as a diameter of the exhaust line 18. In another embodiment, a sealing member (not shown) can be disposed between the support portion TLD and the partition wall 100. The sealing member can extend along a circumference of the path P or a circumference of the exhaust line 18, thereby preventing leakage of gas flowing from the path P to the exhaust line 18.

[0066] The support portion TLD can be disposed between the partition wall 100 and a lid (e.g., a second lid including the exhaust unit 120). A flow control ring (FCR) can be disposed on the support portion TLD. In addition, the flow control ring FCR can be disposed between the support portion TLD and the substrate support unit 150. The flow control ring FCR can be disposed to be slidable on the support portion TLD. The flow control ring FCR can be spaced apart from the substrate support unit 150, form a gap G, and can control pressure balance between the reaction space 51 and the inner space of the outside chamber by adjusting the gap G.

[0067] To achieve pressure balance, a fill gas can be introduced to the reaction space 51 from a lower space below the support portion TLD and the substrate support unit 150. By the fill gas, a gas curtain can be formed in the gap G between the substrate support unit 150 and the gas flow control ring FCR. The gas curtain can prevent gas in the reaction space 51 from being introduced into the lower space.

[0068] In an embodiment, the fill gas can be a different gas from the gas supplied through the processing unit 110. For example, the fill gas can be an inert gas such as nitrogen or argon. In some embodiments, the fill gas can be a gas having a lower exhaust rate than the gas supplied to the reaction space 51 through the processing unit 110. When a plasma is generated in the reaction space 51, the fill gas having a low exhaust rate can prevent a parasitic plasma from being generated in the lower space below the support portion TLD and the substrate support unit 150. The barrier wall W can provide a gap E connecting the reaction space 51 and the exhaust space 55. The gap E can be formed between the exhaust unit 120 and the flow control ring FCR. The gap E can function as a passage between the reaction space 51 and the exhaust space 55. Thus, the reaction space 51 and the exhaust space 55 can communicate with each other through the passage.

[0069] In the above structure, the gas in the reaction space 51 is exhausted in the lateral direction through the exhaust space 55. In other words, the gas of the reaction space 51 can be exhausted through the passage of the exhaust space 55, the opening OP, the exhaust port 13, the path P of the support portion TLD, and the exhaust line 18 of the partition wall 100. This gas exhaust structure can have an improved gas exhaust efficiency compared to a downstream gas exhaust structure, i.e., a structure in which the gas of the reaction space 51 is exhausted through the lower space below the substrate support unit 150. In detail, the lateral gas exhaust structure according to the embodiment can have the following technical advantages.

[0070] 1) Reduction of the volume of the exhaust space - When in the downstream gas exhaust structure, the lower space below the substrate support unit 150 functions as the exhaust space, whereas, in contrast, when in the lateral gas exhaust structure, only the exhaust space 55 in the exhaust unit 120 functions as the exhaust space. Thus, the volume of the exhaust space is reduced. Accordingly, atomic layer deposition processes requiring rapid switching of different gases can be facilitated, and the source of contamination due to residual gas can be reduced.

[0071] 2) Improvement of the exhaust speed - As the volume of the exhaust space is reduced, the exhaust amount can be reduced, and thus the exhaust speed can be improved.

[0072] 3) Reduction of residual gas - As a large amount of gas can be exhausted within a limited time, the residual gas in the reaction space and the exhaust space can be reduced.

[0073] 4) Improvement of durability - Due to the reduction of residual gas, the durability can be improved. In addition, as the residual gas having reactivity is not exhausted through the lower space, the lifespan of the components located in the lower space can be extended.

[0074] 5) Preventing gas leakage - Since the exhaust gas is discharged through the inner portion of the chamber wall, i.e., through the exhaust line 18 of the partition wall 100, it is possible to prevent the leakage of the exhaust gas.

[0075] Returning to Figure 2 , as a part of the exhaust unit 120 of the second lid, the exhaust port 13 can be communicated. The exhaust port 13 can be connected to at least a part of the exhaust unit 120. For example, the exhaust port 13 can be provided to be communicated with a part of the circumference of the exhaust unit 120 (see Figure 14 ). Accordingly, the gas in a part of the exhaust space 55 can be discharged through the exhaust port 13.

[0076] In detail, the gas supplied to the center of the reaction space 51 by the processing unit 110 can be distributed radially. Accordingly, the radially distributed gas can move toward the exhaust space 55 of the exhaust unit 120. Since the exhaust port 13 is connected to a part of the circumference of the exhaust unit 120, the radially distributed gas can flow along the inner path of the exhaust unit 120 to the exhaust space 55. The gas flowing along the inner path of the exhaust unit 120 can be discharged through the opening OP and the exhaust port 13.

[0077] The exhaust port 13 can include a passage extending in a first direction toward the exhaust unit 120 and a second direction different from the first direction. In an embodiment, a passage having an L shape or L shape can be formed in the exhaust port 13. Accordingly, the gas in the exhaust space 55 can be introduced in a lateral direction toward the exhaust port 13 and discharged in a downward direction. In another example, the gas in the exhaust space 55 can be introduced in a lateral direction and discharged in an upward direction. The gas discharged through the exhaust port 13 can be transferred to an exhaust pump (not shown) through the exhaust line 18, and the gas can be discharged to the outside by the exhaust pump.

[0078] Figure 3 A substrate processing apparatus according to another embodiment is schematically illustrated. The substrate processing apparatus according to the present embodiment can be a modified example of the substrate processing apparatus according to the above-described embodiments. Redundant descriptions between the embodiments are omitted.

[0079] Referring to Figure 3 , in the substrate processing apparatus, the contact wall 20 and the substrate support unit 150 can form the reaction space 51 while having a face contact and a face seal. The substrate is mounted on the substrate support unit 150, and in order to load / unload the substrate, the lower portion of the substrate support unit 150 can be connected to an apparatus (not shown) capable of moving up and down.

[0080] An exhaust space 55 according to this embodiment can be formed on the reaction space 51. In this case, the exhaust unit 120 forming the exhaust space and the conductive extension 130 extending in contact with the exhaust unit 120 can be formed above the reaction space 51. For example, the exhaust unit 120 and the conductive extension 130 can be formed above the processing unit 110.

[0081] A barrier wall W can be disposed between the reaction space 51 and the exhaust space 55. A first surface of the barrier wall W, for example, the surface facing the processing unit 110, can define the reaction space 51. A second surface of the barrier wall W, i.e., the surface opposite to the first surface, can define the exhaust space 55. For example, the reaction space 51 can be defined by the first surface of the barrier wall W, the upper surface of the substrate support unit 150, and the lower surface of the processing unit 110.

[0082] The barrier wall W can provide a gap E connecting the reaction space 51 and the exhaust space 55. As described above, the gap E can be used as a communication channel connecting the reaction space 51 and the exhaust space 55.

[0083] The conductive extension 130 may extend along the second surface of the barrier wall W. Except for the gap E adjacent to the barrier wall W, the conductive extension 130 may extend to completely surround the exhaust space 55. The conductive extension 130 may be grounded, thus preventing the generation of parasitic plasma in the exhaust space 55. Therefore, power loss due to the generation of parasitic plasma can be prevented.

[0084] Figure 4 and 5 A substrate processing apparatus according to an embodiment is illustrated schematically. The substrate processing apparatus according to the embodiment may be a modified example of the substrate processing apparatus according to the above embodiment. Redundant descriptions between embodiments are omitted below.

[0085] Reference Figure 4 The reactant gas can be supplied to the reaction space 9 through the gas inlet 8 and the gas supply plate 3. The reactant gas can react with the substrate (not shown) to form a thin film on the substrate placed on the heater block 4. Then, the reactant gas can be discharged to the outside through the exhaust space 10 in the exhaust pipe 5 through the gap formed between the reaction space 9 and the exhaust pipe 5.

[0086] In one embodiment, the exhaust duct 5 and the flow control ring (FCR) 6 may comprise non-conductive material or ceramic. The gas supply plate 3 may be a nozzle and may be connected to the RF rod 2 as an upper electrode. The heater block 4 may be grounded as a lower electrode.

[0087] In the plasma processing, the reaction gas introduced into the reaction space 9 can be excited by the RF power supplied through the RF rod 2 and the gas supply plate 3. The excited reaction gas can be ionized, so that the plasma can be generated. The plasma A generated in the reaction space 9 can contribute to the processing on the substrate, and also can be generated in the exhaust space 10.

[0088] The plasma A in the reaction space 9 can be generated due to the potential difference between the upper electrode 3 and the grounded lower electrode 4. Likewise, the potential difference between the upper electrode 3 and the top cover 7 facing the upper electrode 3 and grounded can be generated, so that the plasma B can be generated in the exhaust space 10.

[0089] The plasma B generated in the exhaust space 10 can be called a parasitic plasma, which does not contribute to the substrate processing process but reduces the efficiency of the plasma A in the reaction space. For example, since a part of the RF power generated by the RF generator is used to generate the parasitic plasma, the RF power contributing to the actual reaction is reduced a lot. Therefore, the efficiency of the plasma processing can be deteriorated, so that the substrate processing can be unstable.

[0090] On the contrary, referring to Figure 5 In the substrate processing apparatus according to the embodiment, the inner cover 11 can be inserted into the exhaust space 10 in the exhaust duct 5. In detail, the inner cover 11 can be inserted between the exhaust duct 5 and the central portion of the exhaust space 10. The inner cover 11 can include a conductive material, for example, a metallic material.

[0091] In an embodiment, the conductive ring 12 can be inserted in the stepped corner portion between the top cover 7 and the flow control ring 6. The inner cover 11 and the conductive ring 12 can contact each other, so that the inner cover 11 and the top cover 7 are electrically connected to each other. Therefore, the potential difference between the inner cover 11 and the top cover 7 can be removed.

[0092] In another embodiment, the inner cover 11 can be in close contact with the exhaust duct 5, and there is no space between the exhaust duct 5 and the inner cover 11. Therefore, even when there is a gas in the exhaust space 10, the inner cover 11 can be located in the grounded region as the top cover 7. In addition, since there is no space between the exhaust duct 5 and the inner cover 11 in the plasma processing, the parasitic plasma can not be generated in the exhaust space 10.

[0093] Figure 6 and 7 is a perspective view showing the exhaust duct 5 and the inner cover 11 included in the substrate processing apparatus according to the embodiment, which are separated from each other. The exhaust duct 5 and the inner cover 11 according to the embodiment can be modified examples of the exhaust unit and the conductive extension according to the above-described embodiments, respectively. Redundant descriptions between the embodiments are omitted.

[0094] Referring to Figure 6The exhaust port 13 can be provided on the surface of the exhaust duct 5, and can be provided between the exhaust space 10 and an exhaust line (not shown). Accordingly, the exhaust gas can be discharged to the exhaust line via the exhaust port 13. The exhaust structure can correspond to Figure 1 and 2 the structure in which the gas of the exhaust space 55 is discharged to the exhaust line implemented in the partition wall 100 via the exhaust port 13.

[0095] As can be seen from the structure of the exhaust port 13 in Figure 6 , the exhaust line can be provided in the upper surface of the exhaust port 13. The structure of the exhaust line is different from the structure of the exhaust line provided in the lower surface of the exhaust port 13 in the embodiments of Figure 1 and 2 .

[0096] In an embodiment, the opening part 14 can be implemented on the surface of the inner cover 11. The opening part 14 can have a structure in the form of a groove, and can be obtained by cutting a portion of the inner cover 11. In an alternative embodiment, the opening part 14 can be implemented in the form of the opening O of Figure 2 .

[0097] The opening part 14 can be formed between the exhaust space 10 and the exhaust port 13, and can serve as a path to discharge the exhaust gas to the exhaust port 13. In addition, the opening part 14 can provide a buffer space with respect to thermal expansion of the inner cover 11 in the high-temperature process.

[0098] Figure 7 A modified example of the inner cover 11 of Figure 6 is shown. Referring to Figure 7 , a portion of the opening part 14 of the inner cover 11 can be cut from the inner cover 11. In other words, a portion of the opening part 14 in the form of a groove obtained by cutting a portion of the inner cover 11 can separate the inner cover 11. In this case, the inner cover 11 can have a shape of an open ring in which at least some portions of the inner cover 11 are separated from each other.

[0099] In the high-temperature process, since the coefficient of thermal expansion of the electrically conductive inner cover 11 is greater than that of the non-conductive exhaust duct 5, the exhaust duct 5 can be deformed or damaged as the inner cover 11 expands. However, as described above, by removing a partial area of the inner cover 11, the shape and arrangement of the inner cover 11 can be maintained even when the inner cover 11 is deformed due to thermal expansion. As a result, damage to the exhaust duct 5 can be prevented in the high-temperature process.

[0100] Figure 8is a perspective view showing an exhaust duct 5, an inner cover 11, and a conductive ring 12 included in a substrate processing apparatus according to an embodiment, which are separated from each other. The exhaust duct 5, the inner cover 11, and the conductive ring 12 according to the embodiment can be modified examples of those of the above-described embodiments. Redundant descriptions between the embodiments are omitted.

[0101] Referring to Figure 8 , the inner cover 11 as a conductive cover can have a first portion P1 and a second portion P2, with the opening portion 14 being an opening therebetween, and the first portion P1 and the second portion P2 can be separated from each other. Although Figure 7 the opening portion 14 of the inner cover 11 is implemented in the form of a groove by cutting a portion of the inner cover 11, Figure 8 the opening portion 14 of the inner cover 11 is implemented by completely cutting a portion of the inner cover 11.

[0102] The conductive ring 12 can be disposed below the inner cover 11. The conductive ring 12 can include a material having excellent thermal conductivity, specifically, a metallic material. The conductive ring 12 can perform the following two functions.

[0103] 1) Preventing generation of a parasitic plasma in the exhaust space 10: When the conductive ring 12 physically contacts the inner cover 11 disposed between the exhaust space 10 and the exhaust duct 5, the potential difference of the inner cover 11 can be the same as that of the top cover 7 connected to the ground electrode. Thus, generation of a parasitic plasma in the exhaust space 10 can be prevented.

[0104] 2) Buffering deformation of the inner cover 11 due to thermal expansion at high temperature: The inner cover 11 including a conductive material can be deformed and can expand at high temperature. The conductive ring 12 can buffer the inner cover 11 thermally expanded between the inner cover 11 and the top cover 7. Thus, the exhaust duct 5, the inner cover 11, and the top cover 7 can be prevented from being deformed or damaged due to thermal expansion.

[0105] To this end, the conductive ring 12 can be implemented by an elastomer having elasticity in the vertical direction. The elastomer can increase the contact area between the inner cover 11 and the conductive ring 12. Thus, the inner cover 11 can have the same potential difference as that of the ground electrode through the conductive ring 12.

[0106] As described above, according to the above-described embodiments, by inserting the inner cover and the conductive ring between the inner cover and the top cover in the exhaust space of the substrate processing apparatus and adjusting the potential difference therebetween, generation of a parasitic plasma in the exhaust line of the reactor in plasma processing can be prevented. Further, by introducing a structure of removing a portion of the inner cover, damage of the exhaust duct due to thermal expansion of the inner cover in high-temperature processing can be prevented.

[0107] Figures 9 to 11A substrate processing apparatus according to some embodiments is schematically shown. In detail, Figure 9 Parts of the substrate processing apparatus other than the lid, i.e. the processing unit and the exhaust unit, are shown, for example the exhaust lines 18 and 28, the connection port CP or the external path EC connected to an external pump and the exhaust ports. Figure 10 A substrate processing apparatus is shown as viewed from a first direction. Figure 9 A substrate processing apparatus is shown as viewed from a second direction. Figure 11 A substrate processing apparatus is shown as viewed from a second direction. Figure 9 A substrate processing apparatus is shown as viewed from a second direction. The substrate processing apparatus according to these embodiments can be a modified example of the substrate processing apparatus according to the above-described embodiments. Redundant descriptions between the following embodiments can be omitted.

[0108] Referring to Figures 9 to 11 , the exhaust lines 18 and 28 are formed inside the partition wall 100. The exhaust lines 18 and 28 are connected to the external path EC through the connection port CP, and the external path EC is connected to the main exhaust path 211. Thus, the gas in the reaction space is exhausted to the exhaust pump EP through the exhaust ports 13 and 23, the exhaust lines 18 and 28, the external path EC and the main exhaust path 211.

[0109] As shown in Figure 10 , two reactors R1a and R1b in the first direction use the inner exhaust lines 18; 18a and 18b, and the other two reactors in the direction opposite to the first direction use the other inner exhaust lines 28; 28a and 28b. The two inner exhaust lines 18 and 28 are connected to the external path EC through the connection ports CP and CP', respectively. The external path EC can be implemented by one configuration or by multiple configurations.

[0110] In Figure 10 , it can be seen that the four reactors use at least one external path EC, the main exhaust path 211 and the exhaust pump EP. The main exhaust path 211 can be further provided with an isolation valve 210. Thus, during maintenance, the isolation valve 210 can protect the exhaust pump EP from the external atmosphere. In addition, a pressure control valve, for example a throttle valve, can be added to the main exhaust path 211. The external path EC can be fixed and not moved in close contact with the lower surface of the partition wall 100 of the external chamber. In an alternative embodiment, in the absence of the external path EC, the two inner exhaust lines 18 and 28 can be connected to each other inside the bottom wall of the partition wall 100 of the external chamber, thereby being directly connected to the main exhaust path 211.

[0111] Referring back to Figure 9 , the first external path EC connected to the first connection port CP can extend toward the first corner C1 of the external chamber below the partition wall 100. In addition, the second external path EC connected to the second connection port CP' can extend toward the second corner C2 of the external chamber below the partition wall 100. Figure 11The second external path EC' of the CP' of the first external path EC can extend toward the second corner C2 of the outer chamber below the partition wall 100. The exhaust pump EP can be disposed on one surface of the substrate processing apparatus, for example, corresponding to the center between the first corner C1 and the second corner C2. The first external path EC can extend from the portion extending from the first corner C1 to the exhaust pump EP. Also, likewise, the second external path EC' can extend from the portion extending from the second corner C2 to the exhaust pump EP.

[0112] Figures 12 to 14 A substrate processing apparatus according to embodiments is schematically illustrated. The substrate processing apparatus according to these embodiments can be a modified example of the substrate processing apparatus according to the above-described embodiments. Redundant descriptions between the following embodiments can be omitted.

[0113] Referring to Figure 12 , a top surface of a multi-reactor chamber 311 is illustrated. A plurality of reactors R are disposed within the chamber 311, and one side of each reactor R is connected to an exhaust port 313. In Figure 12 , it can be seen that each reactor R is connected to each exhaust port 313.

[0114] A plurality of exhaust lines 318 can be formed inside the partition wall of the chamber 311. For example, the chamber 311 can have a rectangular shape, and the exhaust lines 318 can include a first exhaust line, a second exhaust line, a third exhaust line, and a fourth exhaust line. In some embodiments, the first exhaust line to the fourth exhaust line can be disposed corresponding to the four vertices of the rectangle.

[0115] The chamber 311 can include a first reactor, a second reactor, a third reactor, and a fourth reactor. Each reactor can include a substrate support unit, a processing unit, an exhaust unit, and an exhaust port.

[0116] In detail, the first reactor can include a first substrate support unit (not shown) housed in the partition wall of the chamber 311, a first processing unit 312a on the first substrate support unit, a first exhaust unit 314a connected to a first reaction space between the first substrate support unit and the first processing unit 312a, and a first exhaust port 313a connected to at least a portion of the first exhaust unit 314a. In this case, the first exhaust port 313a can be configured to connect the first exhaust unit 314a with the first exhaust line 318a inside the partition wall.

[0117] The second reactor can include a second substrate support unit (not shown) accommodated in the partition wall of the chamber 311, a second processing unit 312b on the second substrate support unit, a second exhaust unit 314b connected to a second reaction space between the second substrate support unit and the second processing unit 312b, and a second exhaust port 313b connected to at least a portion of the second exhaust unit 314b. In this case, the second exhaust port 313b can be configured to connect the second exhaust unit 314b with the second exhaust line 318b inside the partition wall.

[0118] The third reactor can include a third substrate support unit (not shown) accommodated in the partition wall of the chamber 311, a third processing unit 312c on the third substrate support unit, a third exhaust unit 314c connected to a third reaction space between the third substrate support unit and the third processing unit 312c, and a third exhaust port 313c connected to at least a portion of the third exhaust unit 314c. In this case, the third exhaust port 313c can be configured to connect the third exhaust unit 314c with the third exhaust line 318c inside the partition wall.

[0119] The fourth reactor can include a fourth substrate support unit (not shown) accommodated in the partition wall of the chamber 311, a fourth processing unit 312d on the fourth substrate support unit, a fourth exhaust unit 314d connected to a fourth reaction space between the fourth substrate support unit and the fourth processing unit 312d, and a fourth exhaust port 313d connected to at least a portion of the fourth exhaust unit 314d. In this case, the fourth exhaust port 313d can be configured to connect the fourth exhaust unit 314d with the fourth exhaust line 318d inside the partition wall.

[0120] In conjunction with Figures 9 to 12 As described above, the substrate processing apparatus can further include a first connection port (CP) connecting the first exhaust line and the second exhaust line and a second connection port (CP') connecting the third exhaust line and the fourth exhaust line. In addition, the substrate processing apparatus can further include at least one of an external path (EC and EC') connecting the first connection port and the exhaust pump (EP) and connecting the second connection port and the exhaust pump. The external paths EC and EC' can be provided outside the partition wall of the chamber 311. Figure 9 and 11 In conjunction with Figure 9 and 11 In conjunction with Figure 10 and Figure 9 In conjunction with

[0121] Figure 13A side perspective view of the reactor R is shown. The reaction space of the reactor R can be defined as a space surrounded by the exhaust unit 314 such as an exhaust duct, a gas flow control ring (FCR) 315 disposed below the lid, a process unit such as a showerhead (not shown) disposed in an inner space surrounded by the exhaust unit 314, and a substrate support unit such as a heater (not shown) disposed to face the process unit.

[0122] The exhaust unit 314 and the gas flow control ring 315 are spaced apart from each other, forming a gap therebetween. For example, a separation space of about 1 mm can be formed, and the gas in the reaction space can be discharged through the gap, i.e., the separation space, and through the exhaust space 316 and the exhaust port 313 in the exhaust unit 314 to an exhaust pump (not shown). The exhaust port 313 can include a passage that discharges the gas in a downward direction.

[0123] In Figure 13 and 14 , the exhaust path is indicated with an arrow. As can be seen from the drawings, according to the present application, a lateral exhaust structure is employed in which the gas is discharged through the inside of the wall of the main body of the chamber.

[0124] The gas supplied to the reaction space from the upper portion of the reactor through the process unit 312 can be distributed radially. The radially distributed gas can flow toward the exhaust space 316 of the exhaust unit 314. The gas radially distributed toward the exhaust space 316 can be discharged to the exhaust space 316 via the gap between the exhaust unit 314 and the gas flow control ring 315. The gas is discharged to the outside through the exhaust port 313 connected to one surface of the exhaust unit 314.

[0125] In this way, a lateral exhaust structure is provided in which the gas remaining in the reaction space is discharged through the side surface of the reactor. In detail, the exhaust line 318 formed in the inside of the partition wall is formed in the inside of the side wall and the lower wall of the main body of the chamber 311, and the exhaust line 318 and the exhaust unit 314 are communicated with each other through the exhaust port 313.

[0126] Typically, multi-reactor chambers according to existing technology employ a downstream exhaust structure, in which gas is exhausted into the lower space of the chamber, specifically, the lower space of a substrate loading unit, which includes a heater block on which a substrate is mounted. While such chambers offer the advantage of simple equipment construction, the large volume of the lower space necessitates a significant amount of time for complete gas exhaust. Furthermore, for atomic layer deposition processes requiring rapid exchange of different gases, subsequent exhaust gases can be introduced into the lower space before the first exhaust gas is completely exhausted. This causes a chemical reaction between the remaining gas and the subsequently exhausted gas, generating unwanted solid reaction byproducts. These byproducts can lead to contamination of the chamber and the substrate. Moreover, since reaction byproducts deposit on the lower surface of the substrate loading unit, including portions such as the heater block located in the lower chamber, the durability of the equipment may deteriorate, and the efficiency and performance of the moving unit may decrease. This can reduce preventative maintenance cycles (PM cycles), potentially reducing productivity and increasing maintenance costs.

[0127] Conversely, in the substrate processing apparatus according to the above embodiment, the aforementioned problems can be solved by using exhaust pipes formed inside the side and lower walls of the chamber body. In other words, as the volume of the exhaust space decreases, the residual gas in the exhaust space can be reduced. Furthermore, since exhaust contact with parts disposed within the chamber, such as the lower parts of the substrate loading unit and the moving unit, is prevented, the durability of the chamber's components due to exhaust can be prevented. Additionally, PM cycles can be increased and maintenance costs can be reduced. Furthermore, the risk of leaking exhaust can be reduced by utilizing the interior of the chamber walls.

[0128] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for limiting purposes. The description of features or aspects in each embodiment should generally be considered applicable to other similar features or aspects in other embodiments.

[0129] Although one or more embodiments have been described with reference to the accompanying drawings, those skilled in the art will understand that various changes in form and detail may be made without departing from the spirit and scope of the invention as defined by the following claims.

Claims

1. A substrate processing apparatus, comprising: A substrate support unit configured to support a substrate; A processing unit is disposed above a substrate support unit, wherein the reaction space is defined between the substrate support unit and the processing unit; An exhaust unit that provides an exhaust space connected to the reaction space; and A conductive extension that surrounds at least a portion of the exhaust space; The exhaust unit includes a barrier wall disposed between the reaction space and the exhaust space, wherein a first surface of the barrier wall defines the reaction space and a second surface of the barrier wall defines the exhaust space; The conductive extension extends along the second surface of the barrier wall.

2. The substrate processing apparatus according to claim 1, wherein, The conductive extension is configured to prevent the generation of parasitic plasma in the exhaust space.

3. The substrate processing apparatus according to claim 1, wherein, The conductive extension is grounded.

4. The substrate processing apparatus according to claim 1, wherein, The conductive extension has a circumference with a shape corresponding to the shape of the substrate.

5. The substrate processing apparatus according to claim 1, wherein, The conductive extension comes into contact with the barrier wall.

6. The substrate processing apparatus according to claim 1, further comprising: The support section supports the processing unit and the exhaust unit. The exhaust unit is located between the processing unit and the support.

7. The substrate processing apparatus according to claim 6, wherein, The processing unit serves as a first cover on the upper surface defining the reaction space, and The exhaust unit serves as a second cover for the side surface that defines the reaction space.

8. The substrate processing apparatus according to claim 6, wherein, The exhaust unit includes: A barrier wall is installed between the reaction space and the exhaust space; The outer wall is configured to be parallel to the barrier wall and in contact with the support; and A connecting wall connects the barrier wall and the outer wall and provides a contact surface with the processing unit. The conductive extension extends along the barrier wall, connecting wall, outer wall, and support.

9. The substrate processing apparatus according to claim 8, wherein, The conductive extension is electrically connected to the support to allow the conductive extension and the support to have the same potential.

10. The substrate processing apparatus according to claim 8, further comprising: A conductive ring that contacts the conductive extension.

11. The substrate processing apparatus according to claim 10, wherein, The support includes a groove, and The conductive ring is accommodated in the groove.

12. The substrate processing apparatus according to claim 1, further comprising: A conductive ring electrically connected to the conductive extension.

13. The substrate processing apparatus according to claim 12, wherein, The conductive ring includes an elastomer.

14. The substrate processing apparatus according to claim 1, further comprising: An exhaust path, which connects to the exhaust space, The conductive extension includes an opening that provides a connection between the exhaust space and the exhaust path.

15. The substrate processing apparatus according to claim 14, wherein, The conductive extension includes a first portion and a second portion, wherein the opening is between them, and The first part and the second part are separate from each other.

16. The substrate processing apparatus according to claim 1, wherein, The conductive extensions extend in an open-loop configuration, wherein at least a portion of the conductive extensions are separated from each other.

17. The substrate processing apparatus according to claim 10, wherein, The conductive ring is made of an elastic body that is elastic in the vertical direction to increase the contact area between the conductive extension and the conductive ring.

18. A substrate processing apparatus, comprising: Substrate support unit; The first cover is disposed on the substrate support unit and includes at least one processing unit; The second cover is disposed below the first cover and includes a barrier wall; as well as A conductive extension extends from the barrier wall and contacts the second cover. The reaction space is defined by the outer surface of the barrier wall, the upper surface of the substrate support unit, and the lower surface of the first cover. The second cover includes an exhaust space connected to the reaction space, and The conductive extension is grounded and extends from the inner surface of the barrier wall to surround at least a portion of the exhaust space.

19. A substrate processing apparatus, comprising a reaction space and an exhaust space connected to the reaction space, the substrate processing apparatus comprising: A grounded conductive extension is disposed in the exhaust space and configured to prevent the generation of parasitic plasma in the exhaust space; A baffle wall is installed between the reaction space and the exhaust space; The grounded conductive extension extends from the inner surface of the barrier wall to surround at least a portion of the exhaust space, including a portion above the reaction space.

Images