Display device and method of manufacturing the same

Abstract

Provided are a display device and a method for manufacturing the display device. The method comprises the following steps: providing an inorganic layer on a carrier substrate; providing a first flexible substrate on the inorganic layer; providing a first shielding layer comprising metal on the first flexible substrate; providing a first barrier layer on the first shielding layer; and providing a thin film transistor layer on the first barrier layer. The inorganic layer comprises a material selected from silicon nitride (SiN x ), silicon oxide (SiO x ) and silicon oxynitride (SiO x N y ), and the thickness of the inorganic layer is in the range from about #imgabs0# to about #imgabs1#.

Description

[0001] This application claims priority to and all benefits derived from Korean Patent Application No. 10-2019-0098303, filed on August 12, 2019, which is hereby incorporated by reference in its entirety. Technical Field

[0002] Embodiments of the invention relate to a display device and a method of manufacturing the display device. Background Art

[0003] A display device is a device that visually displays image data. Such a display device typically includes a substrate divided into a display area and a non-display area. Pixels may be arranged on the substrate in the display area, and pads and other components may be arranged on the substrate in the non-display area. Driver circuits and other components may be mounted on the pads, transmitting drive signals to the pixels. Summary of the Invention

[0004] A display device may include a flexible substrate and a plurality of stacked structures sequentially stacked on the flexible substrate. The structures of the display device may be formed on a carrier substrate. When the structures are deposited and the carrier substrate is peeled off from the flexible substrate, it may not be easy to peel the flexible substrate and the carrier substrate off from each other.

[0005] Embodiments of the invention provide a display device in which a flexible substrate and a carrier substrate are easily peeled off from each other.

[0006] Embodiments of the invention provide a method of manufacturing a display device, in which a flexible substrate and a carrier substrate are easily peeled off from each other.

[0007] According to an embodiment, a method for manufacturing a display device includes the following steps: providing an inorganic layer on a carrier substrate; providing a first flexible substrate on the inorganic layer; providing a first shielding layer including a metal on the first flexible substrate; providing a first barrier layer on the first shielding layer; and providing a thin film transistor layer on the first barrier layer. In such an embodiment, the inorganic layer includes a silicon nitride (SiN x ), silicon oxide (SiO x ) and silicon oxynitride (SiO x N y ) and the thickness of the inorganic layer is from 10 angstroms to within the range.

[0008] In an embodiment, the thickness of the first shielding layer may be from to within the range.

[0009] In an embodiment, the inorganic layer may prevent electrostatic attraction from being generated between the carrier substrate and the first flexible substrate.

[0010] In an embodiment, providing the first barrier layer may include forming the first barrier layer using plasma enhanced chemical vapor deposition ("PECVD").

[0011] In an embodiment, the method may further include the following step: after providing the first barrier layer and before providing the thin film transistor layer on the first barrier layer, providing a second flexible substrate on the surface of the first barrier layer.

[0012] In an embodiment, the method may further include the following step: after providing the second flexible substrate and before providing the thin film transistor layer, providing a second shielding layer on the surface of the second flexible substrate.

[0013] In an embodiment, the method may further include the following step: after providing the second shielding layer on the surface of the second flexible substrate and before providing the thin film transistor layer, providing a second barrier layer on the surface of the second shielding layer.

[0014] In an embodiment, a first bonding force between the inorganic layer and the carrier substrate may be greater than a second bonding force between the first flexible substrate and the inorganic layer.

[0015] In an embodiment, the method may further include the step of peeling the carrier substrate and the inorganic layer from the surface of the first flexible substrate after providing the thin film transistor layer.

[0016] In an embodiment, peeling the carrier substrate and the inorganic layer from the surface of the first flexible substrate may include peeling the carrier substrate and the inorganic layer from the surface of the first flexible substrate using a mechanical separation method.

[0017] According to another embodiment, a method of manufacturing a display device includes the steps of: disposing a dipole removal layer on a carrier substrate; disposing a flexible substrate on the dipole removal layer; disposing a barrier layer on the flexible substrate; and disposing a thin film transistor layer on the barrier layer. In such an embodiment, the dipole removal layer includes an inorganic material, and the thickness of the dipole removal layer is from about to about within the range.

[0018] In an embodiment, the inorganic material may include a material selected from SiN x 、SiO x and SiO x N y At least one material.

[0019] In an embodiment, the method may further include the step of peeling the carrier substrate and the dipole removal layer from one surface of the flexible substrate after providing the thin film transistor layer.

[0020] In an embodiment, peeling the carrier substrate and the dipole removal layer from the surface of the flexible substrate may include emitting an ultraviolet laser toward the surface of the flexible substrate and removing the carrier substrate and the dipole removal layer from the surface of the flexible substrate using a mechanical separation method.

[0021] According to another embodiment, a display device includes: a first flexible substrate; a first barrier layer disposed on a surface of the first flexible substrate; a thin film transistor layer disposed on a surface of the first barrier layer; and a residue disposed on an opposite surface of the first flexible substrate. In such an embodiment, the residue includes an inorganic material.

[0022] In an embodiment, the display device may further include: a first shielding layer disposed between the first flexible substrate and the first barrier layer.

[0023] In an embodiment, the first shielding layer may include metal.

[0024] In an embodiment, the display device may further include: a second flexible substrate disposed between the first barrier layer and the thin film transistor layer; and a second barrier layer disposed between the second flexible substrate and the thin film transistor layer.

[0025] In an embodiment, the display device may further include: a second shielding layer disposed between the second barrier layer and the second flexible substrate. In such an embodiment, the second shielding layer includes metal.

[0026] In an embodiment, the inorganic material may include a material selected from SiN x 、SiO x and SiO x N y At least one material. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The above and other features of the disclosure will become more apparent by describing in detail exemplary embodiments of the disclosure with reference to the accompanying drawings, in which:

[0028] Figure 1 is a plan view of an arrangement of a display device according to an embodiment;

[0029] Figure 2 is a schematic partial cross-sectional view of the display device in a bent state;

[0030] Figure 3 is a cross-sectional view showing a pixel according to an embodiment;

[0031] Figure 4 is a cross-sectional view showing a pixel according to an alternative embodiment;

[0032] Figure 5 is a flowchart illustrating a method of manufacturing a display device according to an embodiment;

[0033] Figure 6 and Figure 10 is a cross-sectional view illustrating a process operation of a method of manufacturing a display device according to an embodiment;

[0034] Figure 7 It shows Figure 6 an enlarged cross-sectional view of region A;

[0035] Figure 8 is a cross-sectional view illustrating electrostatic attraction between a carrier substrate and a flexible substrate;

[0036] Figure 9 is a cross-sectional view illustrating a case where a dipole removal layer blocks electrostatic attraction between a flexible substrate and a carrier substrate;

[0037] Figure 11 is a cross-sectional view illustrating a process operation of a method of manufacturing a display device according to an alternative embodiment;

[0038] Figure 12 is a cross-sectional view showing a pixel according to another alternative embodiment;

[0039] Figure 13 is a cross-sectional view showing a pixel according to another alternative embodiment;

[0040] Figure 14 is a cross-sectional view showing a pixel according to another alternative embodiment;

[0041] Figure 15 is a flowchart illustrating a method of manufacturing a display device according to an alternative embodiment;

[0042] Figures 16 to 18 is a cross-sectional view illustrating a process operation of a method of manufacturing a display device according to an alternative embodiment;

[0043] Figure 19 and Figure 20 is a graph illustrating a state in which a bonding force between a first flexible substrate and a carrier substrate increases during a deposition process of a first barrier layer;

[0044] Figure 21 is a cross-sectional view illustrating a situation in which the first shielding layer reduces the bonding force between the first flexible substrate and the carrier substrate;

[0045] Figure 22 is a cross-sectional view showing one pixel according to another alternative embodiment; and

[0046] Figure 23 is a table showing the bonding force between the first flexible substrate and the carrier substrate according to another alternative embodiment. DETAILED DESCRIPTION

[0047] The invention will now be described more fully hereinafter with reference to the accompanying drawings, in which various embodiments are shown. However, the invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the scope of the invention to those skilled in the art. Throughout the specification, like reference numerals indicate like components. In the drawings, the thicknesses of layers and regions are exaggerated for clarity.

[0048] It will be understood that although the terms "first," "second," "third," etc. may be used herein to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part. Thus, the first element, first component, first region, first layer, or first part discussed below may be referred to as a second element, second component, second region, second layer, or second part without departing from the teachings herein.

[0049] It will also be understood that when a layer is referred to as being “on” another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. In contrast, when an element is referred to as being “directly on” another element, there are no intervening elements present.

[0050] The terms used herein are only used to describe the purpose of specific embodiments and are not intended to be limiting. As used herein, unless the context clearly indicates otherwise, the singular forms "one (kind / person)" and "the (said)" are intended to include the plural forms comprising "at least one (kind / person) in ... ". "Or" means "and / or". "At least one (kind / person) of A and B" means "A and / or B". As used herein, the term "and / or" includes any combination and all combinations of one or more related listed items. It will also be understood that when the term "comprising" and / or its variations or "including" and / or its variations are used in this manual, the description indicates the presence of stated features, regions, wholes, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, regions, wholes, steps, operations, elements, components and / or their groups.

[0051] As used herein, “about” or “approximately” is inclusive of the stated value and means within an acceptable range of deviation for the particular value as determined by one of ordinary skill in the art, taking into account the measurements in question and errors associated with measurement of the particular quantity (i.e., limitations of the measurement system).

[0052] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which the present disclosure belongs. It will also be understood that terms (such as those defined in commonly used dictionaries) should be interpreted as having a meaning consistent with their meaning in the relevant art and the context of the disclosure, and will not be interpreted in an idealized or overly formal sense unless expressly defined as such herein.

[0053] Exemplary embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments. As such, variations in the shapes of the illustrations, for example, due to manufacturing techniques and / or tolerances, are contemplated. Therefore, the embodiments described herein should not be construed as limited to the specific shapes of the regions shown herein, but rather include deviations in shape, for example, due to manufacturing. For example, a region shown or described as flat may typically have roughness and / or nonlinear features. Furthermore, sharp angles shown may be rounded. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the precise shape of the regions and are not intended to limit the scope of the claims.

[0054] A display device is a device that displays moving images or still images and can be used to implement display screens of a variety of products (such as, not only portable electronic devices such as mobile phones, smart phones, tablet personal computers (PCs), smart watches, watch phones, mobile communication terminals, electronic notebooks, e-books, portable multimedia players (PMPs), navigation systems, and ultra-mobile PCs, but also display devices such as televisions, laptop PCs, monitors, advertising panels, and Internet of Things (IoT) devices).

[0055] Hereinafter, disclosed embodiments will be described in detail with reference to the accompanying drawings.

[0056] Figure 1 is a plan view of an arrangement of a display device according to an embodiment, Figure 2 is a schematic partial cross-sectional view of a display device according to an embodiment in a bent state.

[0057] Reference Figure 1 and Figure 2 , an embodiment of the display device 1 includes a display area DA that displays an image and a non-display area NDA provided in the periphery of the display area DA. In a plan view, the display area DA may have a rectangular shape with rectangular and rounded corners in the third direction DR3 or thickness direction of the display device 1. The planar shape of the display area DA is not limited to a rectangular shape and may be variously modified to another shape (such as a circular shape or an elliptical shape). The display area DA includes a plurality of pixels. The detailed cross-sectional structure of the pixel will be described below.

[0058] The non-display area NDA is disposed in the periphery of the display area DA. The non-display area NDA may be disposed adjacent to two sides or two short sides of the display area DA in the first direction DR1. Figure 1 As shown in , the non-display area NDA may be disposed adjacent to two sides or two long sides of the display area DA in a second direction DR2 intersecting the first direction DR1, except for two short sides of the display area DA, and may surround all sides of the display area DA. In such an embodiment, the non-display area NDA may form or define an edge portion of the display area DA.

[0059] The display device 1 may include a display panel 100 that displays an image and a driver integrated circuit 300 attached to the display panel 100 and driving a pixel circuit of the display panel 100. The driver integrated circuit 300 may be implemented as a chip on plastic ("COP") including a driver chip ("IC") and mounted directly on the display panel 100.

[0060] In one embodiment, for example, the display panel 100 is an organic light emitting display panel. Hereinafter, for ease of description, an embodiment in which the display panel 100 is an organic light emitting display panel will be described in detail, but the disclosure is not limited thereto and the display panel 100 may be another type of display panel such as a liquid crystal display ("LCD") panel, a field emission display ("FED") panel, or an electrophoretic device.

[0061] In an embodiment, Figure 1 and Figure 2 As shown in , the display panel 100 may include a main area MA and a bending area BA. The main area MA may be flat. In such an embodiment, a portion of the non-display area NDA of the display panel 100 and the display area DA may be disposed in the main area MA.

[0062] The bending area BA may be provided at least on one side of the main area MA. Figure 1 and Figure 2 As shown in FIG, a single bending area BA is provided adjacent to the lower side of the main area MA, but is not limited thereto. Alternatively, the bending area BA may be provided adjacent to other sides such as the left side, right side, and upper side of the main area MA. In an embodiment, the bending area BA may be provided on both sides or more of the main area MA.

[0063] The bending area BA may be bent in a direction opposite to the display direction (the bottom surface in the case of a top-emission type device). As described above, in an embodiment in which at least a portion of the non-display area NDA is bent in a direction opposite to the display direction, the frame of the display device 1 may be reduced.

[0064] In an embodiment, the display device 1 may further include a sub-area SA extending from the bending area BA. The sub-area SA may be parallel to the main area MA. The sub-area SA may overlap the main area MA in the thickness direction. The bending area BA and the sub-area SA described above may be non-display areas NDA, but are not limited thereto.

[0065] The display panel 100 may include a pad area PA provided in the non-display area NDA. Figure 1 As shown in , the pad area PA may be positioned in the sub-area SA. However, the pad area PA is not limited thereto and may alternatively be positioned in the main area MA or the bending area BA. The driving integrated circuit 300 may be attached to the pad area PA of the display panel 100.

[0066] A plurality of signal lines are arranged in the pad area PA of the non-display area NDA. The plurality of signal lines can be connected to the thin film transistors of the pixels in the display area DA via connection lines electrically connected to the thin film transistors. The connection lines can be provided in both the display area DA and the non-display area NDA. The bumps of the driver integrated circuit 300 can be connected to the plurality of signal lines.

[0067] The display device 1 may include a printed circuit board 500 attached to the display panel 100. In an embodiment, the printed circuit board 500 may be attached to the outside of the pad area PA of the display panel 100 in the non-display area NDA. In such an embodiment, the pad area PA to which the driver integrated circuit 300 is attached may be provided between the display area DA and the area to which the printed circuit board 500 is attached. The printed circuit board 500 may be attached to the bottom end of the sub-area SA. The printed circuit board 500 may be a flexible printed circuit board ("FPCB"). However, the printed circuit board 500 is not limited thereto and may alternatively be connected to the display panel 100 via a flexible film.

[0068] Figure 3 is a cross-sectional view illustrating a pixel according to an embodiment.

[0069] In an embodiment, the display device 1 may further include a panel backsheet (not shown) disposed below the display panel 100. The panel backsheet may be attached to the bottom surface of the display panel 100. The panel backsheet includes a functional layer. The functional layer may be, for example, a layer that performs a heat dissipation function, an electromagnetic wave blocking function, a grounding function, a buffering function, an enhancement function, a support function, or a digitization function. The functional layer may be a sheet layer including or formed by a sheet, a film layer including or formed by a film, a thin film layer, a coating, a panel, and a plate, etc. A functional layer may be a single layer, or may be formed by or defined by a plurality of stacked thin films or coatings. The functional layer may be, for example, a supporting member, a heat dissipation layer, an electromagnetic wave blocking layer, a shock absorbing layer, or a digitizer.

[0070] In an embodiment, Figure 3 As shown in , the display panel 100 may include a display substrate 101, a plurality of conductive layers, a plurality of insulating layers or organic EL layers for insulating the conductive layers from each other, and the like.

[0071] The display substrate (or first flexible substrate) 101 is provided over the display area DA and the non-display area NDA. The display substrate 101 can perform the function of supporting the elements provided thereon. In an embodiment, the display substrate 101 can be a flexible substrate including a flexible material such as polyimide PI.

[0072] The first barrier layer 102 may be disposed on the display substrate 101. The first barrier layer 102 may be disposed on the surface or upper surface of the display substrate 101. The first barrier layer 102 may effectively prevent moisture and oxygen from penetrating from the outside through the display substrate 101 and reaching the inside of the display panel 100. The first barrier layer 102 may include a material selected from silicon nitride (SiN x ) film, silicon oxide (SiO x ) film and silicon oxynitride (SiO x N y ) membranes.

[0073] The second flexible substrate 103 may be disposed on the first barrier layer 102. The second flexible substrate 103 may be disposed on a surface or upper surface of the first barrier layer 102. The second flexible substrate 103 may be disposed over the display area DA and the non-display area NDA. The second flexible substrate 103 may include the same material as the display substrate (or first flexible substrate) 101.

[0074] The second barrier layer 104 may be disposed on the second flexible substrate 103. The second barrier layer 104 may be disposed on a surface or upper surface of the second flexible substrate 103. The second barrier layer 104 may effectively prevent moisture and oxygen from penetrating from the outside through the display substrate 101 and the second flexible substrate 103 and reaching the inside of the display panel 100. The second barrier layer 104 may include a SiN x Film, SiO x Film and SiO x N y At least one of the membranes.

[0075] The semiconductor layer 105 may be disposed on the second barrier layer 104. The semiconductor layer 105 may be disposed on a surface or upper surface of the second barrier layer 104. The semiconductor layer 105 forms a channel of a thin film transistor. The semiconductor layer 105 may be disposed in each pixel of the display area DA and may be selectively disposed in the non-display area NDA. The semiconductor layer 105 may include source / drain regions and an active region. The semiconductor layer 105 may include polycrystalline silicon.

[0076] The first insulating layer 111 may be provided on the semiconductor layer 105. The first insulating layer 111 may be provided on or over the entire surface of the display substrate 101. The first insulating layer 111 may be a gate insulating film having a gate insulating function. The first insulating layer 111 may include a silicon compound or a metal oxide, etc. In one embodiment, for example, the first insulating layer 111 may include at least one material selected from silicon oxide, silicon nitride, silicon oxynitride, aluminum (Al) oxide, tantalum (Ta) oxide, hafnium (Hf) oxide, zirconium (Zr) oxide, titanium (Ti) oxide, and combinations thereof.

[0077] The first conductive layer 120 may be provided on the first insulating layer 111. The first conductive layer 120 may include a gate electrode GE of a thin film transistor, a first electrode CE1 of a storage capacitor, and a connection line. The connection line may extend through the display area DA and the pad area PA. The first conductive layer 120 may include at least one material selected from molybdenum (Mo), Al, platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), Ti, Ta, tungsten (W), and copper (Cu). The first conductive layer 120 may be a single film or a multilayer film (e.g., a stacked film), wherein each layer includes or is formed of at least one material selected from the materials listed above.

[0078] A second insulating layer 112 may be disposed on the first conductive layer 120. The second insulating layer 112 may insulate the first conductive layer 120 and the second conductive layer 130 from each other. The second insulating layer 112 may be disposed substantially within the display area DA. Although not shown in the drawings, the second insulating layer 112 may expose the top surface of the connection line in the pad area PA. The second insulating layer 112 may include at least one material selected from the materials listed above for the first insulating layer 111.

[0079] The second conductive layer 130 may be disposed on the second insulating layer 112. The second conductive layer 130 may include a second electrode CE2 of the storage capacitor. The material of the second conductive layer 130 may be selected from the materials listed above for the first conductive layer 120. The first electrode CE1 of the storage capacitor and the second electrode CE2 of the storage capacitor may collectively define a storage capacitor together with the second insulating layer 112.

[0080] The third insulating layer 113 may be disposed on the second conductive layer 130. The third insulating layer 113 may include at least one material selected from the materials listed above for the first insulating layer 111. In some embodiments, the third insulating layer 113 may include an organic insulating material. The organic insulating material may include at least one material selected from the materials listed for the first via layer VIA1 described below.

[0081] The third conductive layer 140 may be disposed over the third insulating layer 113, the second insulating layer 112, and the connecting line. The third conductive layer 140 may include a source electrode SE, a drain electrode DE, and a high potential voltage electrode ELVDDE. The third conductive layer 140 may include at least one material selected from Mo, Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Ca, Ti, Ta, W, and Cu. The third conductive layer 140 may be a single film including or formed from at least one material selected from the materials listed above. The third conductive layer 140 is not limited thereto and may be a laminated film. In embodiments, the third conductive layer 140 may have a laminated structure such as Ti / Al / Ti, Mo / Al / Mo, Mo / AlGe / Mo, or Ti / Cu. In embodiments, for example, the third conductive layer 140 may include a Ti / Al / Ti structure.

[0082] Although not shown in the drawings, the third conductive layer 140 may further include a signal line disposed in the pad area PA. The signal line may be disposed so as to overlap with the connection line of the first conductive layer 120 in the thickness direction of the display substrate 101 or in the third direction DR3, and may be electrically connected to the connection line through the exposed portion of the second insulating layer 112 in the pad area PA. The planar size of the signal line may be larger than the planar size of the connection line. Here, the term "planar size" may refer to a size when viewed in a plan view in the third direction DR3.

[0083] The semiconductor layer 105, the gate electrode GE of the thin film transistor of the first conductive layer 120, and the source / drain electrodes SE / DE of the third conductive layer 140 may define three terminals of the thin film transistor. Hereinafter, the semiconductor layer 105, the gate electrode GE of the thin film transistor of the first conductive layer 120, and the source / drain electrodes SE / DE of the third conductive layer 140 may be referred to as a thin film transistor layer LTPS (refer to Figure 6).

[0084] The first via layer VIA1 may be disposed on the third conductive layer 140. The first via layer VIA1 may include an organic insulating material. The organic insulating material may include at least one material selected from acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, and benzocyclobutene ("BCB").

[0085] The fourth conductive layer 150 may be disposed on the first via layer VIA1. The fourth conductive layer 150 may include a data line DL, a connection electrode CNE, and a high-potential voltage line ELVDDL. The data line DL may be electrically connected to the source electrode SE of the thin film transistor via a contact hole defined through the first via layer VIA1. The connection electrode CNE may be electrically connected to the drain electrode DE of the thin film transistor via a contact hole defined through the first via layer VIA1. The high-potential voltage line ELVDDL may be electrically connected to the high-potential voltage electrode ELVDDE via a contact hole defined through the first via layer VIA1. The fourth conductive layer 150 may include at least one material selected from the materials listed above for the third conductive layer 140.

[0086] The second via layer VIA2 may be disposed on the fourth conductive layer 150. The second via layer VIA2 may include at least one material selected from the above-listed materials of the first via layer VIA1.

[0087] The anode electrode ANO is disposed on the second via layer VIA2 and may be electrically connected to the connection electrode CNE through a contact hole defined through the second via layer VIA2.

[0088] A bank layer BANK may be disposed on the anode electrode ANO. A contact hole exposing the anode electrode ANO is defined by the bank layer BANK. The bank layer BANK may include an organic insulating material or an inorganic insulating material. In one embodiment, for example, the bank layer BANK may include at least one material selected from the group consisting of a photoresist, a polyimide resin, an acrylic resin, a silicone compound, and a polyacrylic resin.

[0089] The organic layer EL may be disposed on the top surface of the anode electrode ANO and in the opening portion of the bank layer BANK. The cathode electrode CAT is disposed on the organic layer EL and the bank layer BANK. The cathode electrode CAT may be a common electrode disposed over a plurality of pixels.

[0090] The thin film encapsulation layer 170 is provided on the cathode electrode CAT. The thin film encapsulation layer 170 may cover the organic light emitting diode ("OLED"). The thin film encapsulation layer 170 may be a laminated film formed by alternately laminating inorganic films and organic films. In one embodiment, for example, the thin film encapsulation layer 170 may include a first inorganic encapsulation film 171, an organic encapsulation film 172, and a second inorganic encapsulation film 173 stacked sequentially.

[0091] In an embodiment of the display device 1, the residue 710 may be further provided on an opposite surface (eg, a lower surface) of the display substrate 101 opposite to the surface thereof. The residue 710 may include a material selected from SiN x Film, SiO x Film and SiO x N y At least one of the membranes.

[0092] The residue 710 may include a dipole removal layer (ie, an inorganic layer) 710a (refer to Figure 6 ) of the same material, the dipole removal layer 710a is disposed on a carrier substrate (eg, carrier glass) 600 (refer to Figure 6 ) and the display substrate 101 to easily separate or peel the carrier substrate 600 from the display substrate 101 in a method of manufacturing a display device according to an embodiment to be described below. The residue 710 may be a film or layer that is a remaining portion of the dipole removal layer 710a when the dipole removal layer 710a and the carrier substrate 600 are separated or peeled from opposing surfaces of the display substrate 101.

[0093] Figure 4 is a cross-sectional view illustrating a pixel according to an alternative embodiment.

[0094] Except for omitting the above reference Figure 3 In addition to the second flexible substrate 103 and the second barrier layer 104, Figure 4 The pixels of the display device 2 shown in FIG. Figure 3 The pixels of the display device 1 are substantially the same. In such an embodiment, the semiconductor layer 105 may be provided on the surface of the first barrier layer 102 .

[0095] Hereinafter, an embodiment of a method for manufacturing the display device described above will be described. In such an embodiment, components substantially the same as or similar to those of the embodiment described above will be indicated by the same or similar reference numerals, and any repeated description thereof will be omitted or simplified hereinafter.

[0096] Figure 5 is a flowchart illustrating a method of manufacturing a display device according to an embodiment, Figure 6 and Figure 10are cross-sectional views illustrating processing operations of a method of manufacturing a display device according to an embodiment. Figure 7 It shows Figure 6 An enlarged cross-sectional view of region A, Figure 8 is a cross-sectional view illustrating electrostatic attraction between a carrier substrate and a flexible substrate, Figure 9 is a cross-sectional view illustrating a case where a dipole removal layer blocks electrostatic attraction between a flexible substrate and a carrier substrate.

[0097] First, refer to Figure 5 and Figure 6 An embodiment of a method for manufacturing a display device may include the following steps: providing or forming an inorganic layer 710a on a carrier substrate 600 (S10); providing or forming a first flexible substrate 101 on the inorganic layer 710a (S30); providing or forming a first barrier layer 102 on the first flexible substrate 101 (S50); and providing or forming a thin film transistor layer LTPS on the first barrier layer 102 (S70). Such an embodiment of the method for manufacturing a display device may also include providing or forming a first shielding layer including metal on the first flexible substrate 101.

[0098] The carrier substrate 600 may support the display substrate (or first flexible substrate) 101, the first barrier layer 102, the second flexible substrate 103, the second barrier layer 104, and the thin film transistor layer LTPS from below when the display substrate (or first flexible substrate) 101, the first barrier layer 102, the second flexible substrate 103, the second barrier layer 104, and the thin film transistor layer LTPS are deposited thereon. The carrier substrate 600 may include a rigid material. In one embodiment, for example, the carrier substrate 600 may include a Figure 8 The SiO shown in x In the embodiment, in addition to SiO x In addition, the carrier substrate 600 may further include a small amount of impurities. The impurities may include Al, potassium (K), or sodium (Na). In an embodiment, K and Na may be included in the carrier substrate 600 as positive ions. The impurities in the carrier substrate 600 may cause electrostatic attraction with the first flexible substrate 101, which will be described in more detail below.

[0099] In an embodiment, the inorganic layer 710 a is disposed or formed on the carrier substrate 600 .

[0100] The inorganic layer 710a may perform a function of increasing the ease of a process of peeling the carrier substrate 600 from the first flexible substrate 101 by reducing electrostatic attraction and, in detail, reducing the dipole moment between the carrier substrate 600 and the first flexible substrate 101 as follows. The inorganic layer 710a may include a material selected from SiN x Film, SiO x Film and SiO xN y At least one of the membranes.

[0101] In an embodiment, operation S10 of disposing or forming the inorganic layer 710 a on the carrier substrate 600 may include forming components of the inorganic layer 710 a on the surface of the carrier substrate 600 using chemical vapor deposition (“CVD”).

[0102] In such an embodiment, the inorganic layer 710 a is formed using CVD, so that the inorganic layer 710 a may be a pure inorganic layer without impurities.

[0103] In such an embodiment, the first flexible substrate 101 is provided or formed on the inorganic layer 710 a ( S30 ).

[0104] Since the constituent materials and functions of the first flexible substrate 101 are similar to those of the above reference Figure 3 The constituent materials and functions of the described first flexible substrate 101 are substantially the same, and thus any repeated detailed description thereof will be omitted.

[0105] The first thickness t1 of the inorganic layer 710a may be from about 10 angstroms to about 10 angstroms. to about When the first thickness t1 of the inorganic layer 710a is greater than or equal to about When the first thickness t1 of the inorganic layer 710a is less than or equal to about When the inorganic layer 710a is formed, the first flexible substrate 101 formed after the inorganic layer 710a can be effectively prevented from becoming wrinkled or having a surface step due to the inorganic layer 710a formed using CVD.

[0106] In one embodiment, for example, the second thickness t2 of the first flexible substrate 101 may be in a range from about 5 micrometers (μm) to about 30 μm. The second thickness t2 of the first flexible substrate 101 may be less than the first thickness t1 of the inorganic layer 710a.

[0107] The third thickness t3 of the carrier substrate 600 may be in a range of about 3 mm to about 10 mm. The third thickness t3 of the carrier substrate 600 may be greater than the second thickness t2 of the first flexible substrate 101 and the first thickness t1 of the inorganic layer 710a.

[0108] Reference Figure 7 The inorganic layer 710a and the first flexible substrate 101 may be physically bonded to each other by a first bonding force F1, the inorganic layer 710a and the carrier substrate 600 may be physically bonded to each other by a second bonding force F2, and the first flexible substrate 101 and the carrier substrate 600 may be physically bonded to each other by a third bonding force F3.

[0109] The first bonding force F1 may be smaller than the second bonding force F2. The third bonding force F3 may be an electrostatic attraction. In such an embodiment, the third bonding force F3 may be formed by a dipole between components of the first flexible substrate 101 and components of the carrier substrate 600 in the electrostatic attraction.

[0110] In such an embodiment, a first barrier layer 102 is provided or formed on the first flexible substrate 101 ( S50 ).

[0111] Since the composition and function of the first barrier layer 102 are similar to those of the above reference Figure 3 The components and functions of the described first barrier layer 102 are substantially the same, and thus any repeated detailed description thereof will be omitted.

[0112] In an embodiment, operation S50 of providing or forming the first barrier layer 102 may be an operation of forming a component of the first barrier layer 102 on the surface of the first flexible substrate 101 using plasma enhanced chemical vapor deposition (“PECVD”).

[0113] When the first barrier layer 102 is formed on the surface of the first flexible substrate 101 , a third coupling force F3 between the first flexible substrate 101 and the carrier substrate 600 may increase, which will be described in more detail below.

[0114] In an embodiment, the second flexible substrate 103 is disposed or formed on the first barrier layer 102. Since the composition and function of the second flexible substrate 103 are similar to those of the first barrier layer 102, the second flexible substrate 103 is disposed or formed on the first barrier layer 102. Figure 3 The components and functions of the described second flexible substrate 103 are substantially the same, and thus any repeated detailed description thereof will be omitted.

[0115] In an embodiment, the second barrier layer 104 is disposed or formed on the second flexible substrate 103. Since the composition and function of the second barrier layer 104 are similar to those described above with reference to Figure 3 The components and functions of the described second barrier layer 104 are substantially the same, and thus any repeated detailed description thereof will be omitted.

[0116] In an embodiment, a thin film transistor layer LTPS is formed on the second barrier layer 104 .

[0117] In an alternative embodiment, as shown in FIG. Figure 4 As described, the second flexible substrate 103 and the second barrier layer 104 may be omitted. In such an embodiment, the first barrier layer 102 is formed (S50), and then the thin film transistor layer LTPS is formed on the first barrier layer 102 (S70).

[0118] Since the thin film transistor layer LTPS is Figure 3The described thin film transistor layer LTPS is substantially the same, and thus any repeated detailed description thereof will be omitted.

[0119] Reference Figure 8 , as described above, except for SiO x In addition, the carrier substrate 600 may also include a small amount of impurities. The impurities may include Al, K, or Na. In an embodiment, K and Na may be included in the carrier substrate 600 as positive ions. The impurities in the carrier substrate 600 may cause electrostatic attraction with the first flexible substrate 101. In such an embodiment, electrostatic attraction may occur between the impurities (particularly positive ions) in the carrier substrate 600 and the components of the first flexible substrate 101. The sum of the electrostatic attractions may be the third binding force F3 described above. When some of the impurities in the carrier substrate 600 have positive ions, some components of the first flexible substrate 101 have negative ions, so that a dipole moment may occur between them.

[0120] Electrostatic attraction (i.e., a dipole moment between some of the impurities of the carrier substrate 600 (using positive ions) and some components of the first flexible substrate 101 (using negative ions)) can increase the third bonding force F3 between the carrier substrate 600 and the first flexible substrate 101, and can make it difficult to peel the carrier substrate 600 from the first flexible substrate 101 in the process of peeling the carrier substrate 600 from the first flexible substrate 101.

[0121] In an embodiment of a method for manufacturing a display device, Figure 9 As shown in FIG, an inorganic layer 710a free of impurities can be provided or formed between the carrier substrate 600 and the first flexible substrate 101 to prevent electrostatic attraction (i.e., dipole moment) between some of the impurities in the carrier substrate 600 (using positive ions) and some of the components in the first flexible substrate 101 (using negative ions). In such an embodiment, the third bonding force F3 can be blocked in advance. Therefore, in the operation of peeling the carrier substrate 600 described below, the carrier substrate 600 can be easily separated or peeled from the first flexible substrate 101.

[0122] In an embodiment, the carrier substrate 600 is separated or peeled from the opposing surface of the first flexible substrate 101 .

[0123] The operation of peeling the carrier substrate 600 from the opposite surface of the first flexible substrate 101 may further include peeling the inorganic layer 710a formed between the first flexible substrate 101 and the carrier substrate 600 together with the carrier substrate 600. In such an embodiment, as described above, the bonding force between the inorganic layer 710a and the carrier substrate 600 is greater than the bonding force between the inorganic layer 710a and the first flexible substrate 101.

[0124] The operation of peeling the carrier substrate 600 from the opposite surface of the first flexible substrate 101 may include the following steps: reducing the bonding force between the first flexible substrate 101 and the inorganic layer 710a by emitting ultraviolet laser toward the opposite surface of the first flexible substrate 101, and mechanically separating the inorganic layer 710a and the carrier substrate 600 from the opposite surface of the first flexible substrate 101.

[0125] In an embodiment, in a state in which the third coupling force F3 between the first flexible substrate 101 and the carrier substrate 600 is appropriately reduced, mechanical separation can be simply performed when the carrier substrate 600 is peeled from the opposite surface of the first flexible substrate 101 .

[0126] In an embodiment of a method for manufacturing a display device, Figure 10 As shown in FIG, when the inorganic layer 710 a and the carrier substrate 600 are separated or peeled from the opposing surfaces of the first flexible substrate 101 , a film or layer residue 710 that is a remaining portion of the inorganic layer 710 a may be formed on the opposing surface of the first flexible substrate 101 .

[0127] Figure 11 are cross-sectional views illustrating process operations of a method of manufacturing a display device according to an alternative embodiment.

[0128] Reference Figure 11 , except that a dipole removal layer including an organic material is formed between the carrier substrate 600 and the first flexible substrate 101, such an embodiment of the method of manufacturing a display device is the same as that described above with reference to Figures 5 to 9 The described embodiments of the method of manufacturing a display device are substantially the same.

[0129] In such an embodiment, a dipole removal layer may be disposed or formed on the carrier substrate 600 , and the first flexible substrate 101 may be disposed or formed on the dipole removal layer.

[0130] The dipole removal layer may include an organic material and may be a pure organic layer without impurities like the inorganic layer 710 a .

[0131] Since the dipole removal layer includes an organic material, the bonding force with the carrier substrate 600 can be greater than the bonding force with the first flexible substrate 101 thereon. Figure 11 As shown in FIG, although a portion of the dipole removal layer is also separated from the opposite surface of the first flexible substrate 101 when the carrier substrate 600 is peeled from the opposite surface of the first flexible substrate 101, a large amount of the dipole removal layer may remain on the opposite surface of the first flexible substrate 101. The organic residue 710_1 remaining on the opposite surface of the first flexible substrate 101 may include uneven portions and scratches SC on the surface thereof.

[0132] Figure 12 is a cross-sectional view illustrating a pixel according to another alternative embodiment.

[0133] Reference Figure 12 , except that the residue 710 is omitted from the display device 1 and a first shielding layer 720 is further provided between the first flexible substrate 101 and the first barrier layer 102, such an embodiment of the display device 3 is the same as that described above with reference to FIG. Figures 1 to 3 The described embodiments of the display device 1 are essentially identical.

[0134] In the embodiment of the display device 3 , the first shielding layer 720 may be further disposed between the first flexible substrate 101 and the first barrier layer 102 .

[0135] The first shielding layer 720 may include a metal. The metal may include, for example, at least one selected from the group consisting of Mo, Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Ca, Ti, Ta, W, and Cu. The first shielding layer 720 may be a single metal film or a plurality of stacked metal films.

[0136] The first shielding layer 720 can function to reduce the electrostatic attraction between the first flexible substrate 101 and the carrier substrate 600. In such an embodiment, as described below, during the operation of forming the first barrier layer 102, an electrostatic potential difference is generated between the upper and lower portions of the first flexible substrate 101 by plasma. This electrostatic potential difference can cause an increase in the electrostatic attraction between the first flexible substrate 101 and the carrier substrate 600. In the embodiment of the display device 3, the first shielding layer 720 can effectively prevent the electrostatic potential difference between the upper and lower portions of the first flexible substrate 101 generated by plasma, thereby preventing an increase in the electrostatic attraction between the first flexible substrate 101 and the carrier substrate 600.

[0137] The fourth thickness t4 of the first shielding layer 720 may be in the range of about to about When the fourth thickness t4 of the first shielding layer 720 is greater than or equal to about When the fourth thickness t4 of the first shielding layer 720 is less than or equal to about When the first shielding layer 720 is used, poor performance of a device used in a subsequent process due to the first shielding layer 720 can be prevented.

[0138] In an embodiment, the first shielding layer 720 may include a metal oxide, such as, but not limited to, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), or magnesium oxide (MgO).

[0139] Figure 13 is a cross-sectional view illustrating a pixel according to another alternative embodiment.

[0140] Reference Figure 13 , except that the second flexible substrate 103 and the second barrier layer 104 are omitted, this embodiment of the display device 4 is the same as that described above with reference to Figure 12 The described embodiments of the display device 3 are essentially identical.

[0141] In such an embodiment of the display device 4 , the second flexible substrate 103 and the second barrier layer 104 may be omitted.

[0142] Since other features are the same as those mentioned above Figure 12 and Figure 3 The features described are substantially the same, so any repeated detailed description thereof will be omitted.

[0143] Figure 14 is a cross-sectional view illustrating a pixel according to another alternative embodiment.

[0144] Reference Figure 14 , except that the second shielding layer 730 is further provided between the second flexible substrate 103 and the second barrier layer 104, such an embodiment of the display device is similar to the above reference Figure 12 The described embodiments of the display device 3 are essentially identical.

[0145] In such an embodiment of the display device, as described above, the second shielding layer 730 may be further disposed between the second flexible substrate 103 and the second barrier layer 104. The second shielding layer 730 may include at least one material selected from the materials listed above for the first shielding layer 720. The thickness of the second shielding layer 730 may be equal to or substantially similar to the thickness of the first shielding layer 720.

[0146] Figure 15 is a flowchart illustrating a method of manufacturing a display device according to an alternative embodiment, Figures 16 to 18 is a cross-sectional view illustrating a process operation of a method of manufacturing a display device according to an alternative embodiment, Figure 19 and Figure 20 is a graph showing a state in which a bonding force between a first flexible substrate and a carrier substrate increases during a deposition process of a first barrier layer, Figure 21 is a cross-sectional view illustrating a case in which the first shielding layer reduces the bonding force between the first flexible substrate and the carrier substrate.

[0147] Reference Figures 15 to 21An embodiment of a method for manufacturing a display device may include the following steps: providing or forming a first flexible substrate 101 on a carrier substrate 600 (S30_1); providing or forming a first shielding layer 720 including metal on the first flexible substrate 101 (S40); providing or forming a first barrier layer 102 on the first shielding layer 720 (S50_1); and providing or forming a thin film transistor layer LTPS on the first barrier layer 102 (S70).

[0148] In such an embodiment, reference Figure 16 , a first flexible substrate 101 is disposed or formed on the carrier substrate 600 (S30_1). In such an embodiment, except that the first flexible substrate 101 is directly disposed or formed directly on the carrier substrate 600, the embodiment of the method of manufacturing the display device is the same as that described above with reference to FIG. Figure 5 The described embodiments of the method of manufacturing a display device are substantially the same, and any repeated detailed description of the same or similar elements thereof will be omitted.

[0149] In such an embodiment, reference Figure 17 , a first shielding layer 720 is disposed or formed on the first flexible substrate 101 ( S40 ).

[0150] Reference Figure 18 Subsequently, a first barrier layer 102 is disposed or formed on the first shielding layer 720 (S50_1). Subsequently, a second flexible substrate 103 may be disposed or formed on the first barrier layer 102, and a second barrier layer 104 may be disposed or formed on the second flexible substrate 103. Subsequently, a thin film transistor layer LTPS is disposed or formed on the second barrier layer 104.

[0151] Since the operation (S50_1) of forming the first barrier layer 102 is the same as that of the above reference except that the first barrier layer 102 is formed on the first shielding layer 720, Figure 5 The operation ( S50 ) of forming the first barrier layer 102 of the described method of manufacturing the display device is substantially the same, and thus any repeated detailed description thereof will be omitted.

[0152] Since the operations of forming the second flexible substrate 103, the second barrier layer 104, and the thin film transistor layer LTPS are substantially the same as those of the second flexible substrate 103, the second barrier layer 104, and the thin film transistor layer LTPS described above in the embodiment of the method of manufacturing a display device, any repeated detailed description thereof will be omitted.

[0153] Reference Figures 19 to 21In the operation of forming the first barrier layer 102 ( S50_1 ), an electrostatic potential energy difference may be generated between the upper and lower portions of the first flexible substrate 101 by plasma. The first barrier layer 102 may correspond to the plasma region located on the right side of the graph, the upper portion of the first flexible substrate 101 may correspond to the front sheath region, and the lower portion of the first flexible substrate 101 may correspond to the sheath region. In other words, a significant electrostatic potential energy difference may exist between the upper and lower portions of the first flexible substrate 101. Consequently, the electrostatic attraction force corresponding thereto may be further increased between the lower portion of the first flexible substrate 101 and the carrier substrate 600.

[0154] In an embodiment of the method of manufacturing a display device, by forming the first shielding layer 720 between the first barrier layer 102 and the first flexible substrate 101 before the operation (S50_1) of forming the first barrier layer 102, an increase in electrostatic attraction between the first flexible substrate 101 and the carrier substrate 600 can be effectively prevented by preventing an electrostatic potential energy difference between the upper and lower portions of the first flexible substrate 101 from occurring due to plasma generated in the operation (S50_1) of forming the first barrier layer 102.

[0155] Figure 22 is a cross-sectional view showing a pixel according to another alternative embodiment, Figure 23 is a table showing bonding force between a first flexible substrate and a carrier substrate according to another embodiment.

[0156] Reference Figure 22 In such an embodiment, in addition to further setting the above reference Figure 12 Except for the first shielding layer 720 described above, the embodiment of the pixel of the display device is the same as that of the above reference Figure 3 The described embodiments are essentially the same.

[0157] In such an embodiment, the method for manufacturing a display device may include the following steps: forming an inorganic layer 710a on a carrier substrate 600 (S10); forming a first flexible substrate 101 on the inorganic layer 710a (S30); forming a first shielding layer 720 including metal on the first flexible substrate 101 (S40); forming a first barrier layer 102 on the first shielding layer 720 (S50_1); and forming a thin film transistor layer LTPS on the first barrier layer 102 (S70). Since such operations are similar to those described above with reference to Figure 5 and Figure 15 The operations described are substantially the same, and thus any repeated detailed description thereof will be omitted.

[0158] Reference Figure 23In the method of manufacturing a display device, when the inorganic layer 710a and the first shielding layer 720 are not provided and the first barrier layer 102 is not provided on the first flexible substrate 101, the bonding force between the first flexible substrate 101 and the carrier substrate 600 is about 10 grams-force per inch (gf / inch). In this case, when the first barrier layer 102 is formed on the first flexible substrate 101, the bonding force between the carrier substrate 600 and the first flexible substrate 101 greatly increases to about 1087.9 gf / inch, making it difficult to peel the carrier substrate 600 from the first flexible substrate 101.

[0159] In an embodiment of the invention in which the inorganic layer 710a and the first shielding layer 720 are provided as described above, when the first barrier layer 102 is not formed on the first flexible substrate 101, the bonding force between the first flexible substrate 101 and the carrier substrate 600 is approximately 4.6 gf / inch, which is further greatly reduced than the bonding force between the first flexible substrate 101 and the carrier substrate 600 in the case in which the inorganic layer 710a and the first shielding layer 720 are not provided. In such an embodiment, it can be seen that when the first barrier layer 102 is formed on the first flexible substrate 101, the bonding force between the first flexible substrate 101 and the carrier substrate 600 is approximately 7.3 gf / inch, which is further greatly reduced than the bonding force between the carrier substrate 600 and the first flexible substrate 101 when the inorganic layer 710a and the first shielding layer 720 are not provided and the first barrier layer 102 is formed on the first flexible substrate 101.

[0160] According to an embodiment of the method of manufacturing a display device, in the process of peeling the carrier substrate 600 from the opposite surface of the first flexible substrate 101, the carrier substrate 600 can be easily separated or peeled directly from the opposite surface of the first flexible substrate 101 using only a mechanical separation method, without using an ultraviolet laser to perform an operation of reducing the bonding force between the first flexible substrate 101 and the carrier substrate 600.

[0161] According to the disclosed embodiments, the display device can have high bonding reliability.

[0162] The invention should not be construed as limited to the exemplary embodiments set forth herein. Rather, these exemplary embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art.

[0163] While the invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit or scope of the invention as defined by the claims.

Claims

1. A method for manufacturing a display device, the method comprising the following steps: providing an inorganic layer on a carrier substrate, the carrier substrate comprising impurities including positive ions; disposing a first flexible substrate on the inorganic layer, wherein the first flexible substrate includes a component using negative ions; providing a first shielding layer comprising metal on the first flexible substrate; providing a first barrier layer on the first shielding layer; as well as disposing a thin film transistor layer on the first barrier layer, wherein the inorganic layer comprises at least one material selected from silicon nitride, silicon oxide, and silicon oxynitride and is free of impurities, wherein the thickness of the inorganic layer is in the range of 10 Å to 6000 Å, and The inorganic layer prevents electrostatic attraction from being generated between the carrier substrate and the first flexible substrate.

2. The method according to claim 1, wherein The thickness of the first shielding layer is in the range from 10 Å to 6000 Å.

3. The method according to claim 1, wherein The step of providing the first barrier layer includes forming the first barrier layer using plasma enhanced chemical vapor deposition.

4. The method according to claim 3, further comprising the steps of: After the step of providing the first barrier layer and before the step of providing the thin film transistor layer on the first barrier layer, a second flexible substrate is provided on a surface of the first barrier layer.

5. The method according to claim 4, further comprising the steps of: After the step of providing the second flexible substrate and before the step of providing the thin film transistor layer, a second shielding layer is provided on a surface of the second flexible substrate.

6. The method according to claim 5, further comprising the steps of: After the step of providing the second shielding layer on the surface of the second flexible substrate and before the step of providing the thin film transistor layer, a second barrier layer is provided on the surface of the second shielding layer.

7. The method according to claim 3, wherein: A first bonding force between the inorganic layer and the carrier substrate is greater than a second bonding force between the first flexible substrate and the inorganic layer.

8. The method according to claim 7, further comprising the steps of: After the step of providing the thin film transistor layer, the carrier substrate and the inorganic layer are peeled off from the surface of the first flexible substrate.

9. The method according to claim 8, wherein The step of peeling the carrier substrate and the inorganic layer from the surface of the first flexible substrate includes peeling the carrier substrate and the inorganic layer from the surface of the first flexible substrate using a mechanical separation method.

10. A method for manufacturing a display device, the method comprising the following steps: providing a dipole removal layer on a carrier substrate, the carrier substrate including impurities comprising positive ions; disposing a flexible substrate on the dipole removal layer, wherein the flexible substrate includes a component using negative ions; providing a barrier layer on the flexible substrate; as well as providing a thin film transistor layer on the barrier layer, wherein the dipole removal layer comprises an inorganic material without impurities, wherein the thickness of the dipole removal layer is in the range of 10 Å to 6000 Å, and The dipole removal layer prevents electrostatic attraction from being generated between the carrier substrate and the flexible substrate.

11. The method according to claim 10, wherein: The inorganic material includes at least one material selected from silicon nitride, silicon oxide, and silicon oxynitride.

12. The method according to claim 10, further comprising the steps of: After the step of providing the thin film transistor layer, the carrier substrate and the dipole removal layer are peeled off from the surface of the flexible substrate.

13. The method according to claim 12, wherein: The step of peeling the carrier substrate and the dipole removal layer from the surface of the flexible substrate includes emitting an ultraviolet laser toward the surface of the flexible substrate and removing the carrier substrate and the dipole removal layer from the surface of the flexible substrate using a mechanical separation method.

14. A display device, comprising: A first flexible substrate including a component employing negative ions; a first barrier layer disposed on a surface of the first flexible substrate; a thin film transistor layer, disposed on the surface of the first barrier layer; as well as a residue which is a portion of an inorganic layer disposed on an opposing surface of the first flexible substrate after the carrier substrate and the first flexible substrate are separated, the inorganic layer being for preventing electrostatic attraction from being generated between the carrier substrate including impurities containing positive ions and the first flexible substrate, Wherein, the residue comprises inorganic materials without impurities.

15. The display device according to claim 14, further comprising: The first shielding layer is disposed between the first flexible substrate and the first barrier layer.

16. The display device according to claim 15, wherein The first shielding layer includes metal.

17. The display device according to claim 15, further comprising: a second flexible substrate disposed between the first barrier layer and the thin film transistor layer; as well as The second barrier layer is disposed between the second flexible substrate and the thin film transistor layer.

18. The display device according to claim 17, further comprising: a second shielding layer disposed between the second barrier layer and the second flexible substrate, Wherein, the second shielding layer comprises metal.

19. The display device according to claim 14, wherein The inorganic material includes at least one material selected from silicon nitride, silicon oxide, and silicon oxynitride.

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