A reaction chamber device and its working method

Abstract

A reaction chamber device and its operating method are disclosed. The reaction chamber device includes: a reaction chamber body; a wafer carrier platform located within the reaction chamber body, the surface of the wafer carrier platform being adapted to place a wafer; and a buffer ring surrounding the wafer carrier platform, the buffer ring being adapted to move in a direction perpendicular to the surface of the wafer carrier platform. The reaction chamber device is capable of adjusting the uniformity of the reaction rate across the entire wafer surface.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing, and more particularly to a reaction chamber device and its operating method. Background Technology

[0002] Semiconductor manufacturing involves multiple processes, each completed using specific equipment and techniques. Plasma reactions are commonly used for chemical and physical deposition (CPD), etching, and photoresist ashing removal on semiconductor wafers and other substrates. Common plasma sources include ICP, CCP, and microwave generation. For certain photoresist ashing removal processes, it is generally undesirable for high-energy ions in the plasma to directly interact with the photoresist. Instead, a high-temperature ashing reaction is desired between the photoresist and chemically active free radical intermediates in the plasma—a typical high-temperature chemical reaction process. The uniformity of the ashing reaction is crucial, and this uniformity depends on the uniformity of the distribution of chemically active free radical intermediates (referred to as active groups) on the wafer surface, including the uniformity of active group flow rate, pressure, and composition.

[0003] Generally, photoresists with high-concentration implants often employ reducing chemical reactions during removal, such as using an H2 / N2 mixture as the reactant gas. This ashing reaction typically exhibits a strong trend of high reaction rate at the center and low reaction rate at the edges. The reason for this is that the high-density H2 produced by plasma... * The active groups have a very high migration rate due to their light weight. * The residence time in the reaction chamber is extremely short, making it very easy to be drawn away by the vacuum pump, causing H at the wafer edge region. * The trend of a sharp drop in concentration, i.e., high concentration at the wafer center and fast ashing reaction, and low concentration at the wafer edge and slow ashing reaction, results in poor overall reaction uniformity. Summary of the Invention

[0004] The problem solved by this invention is to provide a reaction chamber device and its working method, which can adjust the uniformity of the reaction rate across the entire wafer surface.

[0005] To address the aforementioned technical problems, the present invention provides a reaction chamber device, comprising: a reaction chamber body; a wafer carrier platform located within the reaction chamber body, the surface of the wafer carrier platform being adapted to place a wafer; and a buffer ring surrounding the wafer carrier platform, the buffer ring being adapted to move in a direction perpendicular to the surface of the wafer carrier platform.

[0006] Optionally, the buffer ring has an opening; the opening extends through the buffer ring from the inner wall to the outer wall of the buffer ring.

[0007] Optionally, several openings are arranged circumferentially along the buffer ring.

[0008] Optionally, the projection shape of the opening on the sidewall of the buffer ring is strip-shaped, and the extension direction of the strip is perpendicular to the arrangement direction of the plurality of openings.

[0009] Optionally, the projection shape of the opening on the sidewall of the buffer ring extends along the circumference of the buffer ring; multiple openings are arranged in a direction from the top to the bottom of the buffer ring.

[0010] Optionally, the projection shape of the opening on the sidewall of the buffer ring is a hole.

[0011] Optionally, the buffer ring may be made of quartz, ceramic, bare aluminum, or anodized aluminum.

[0012] Optionally, the buffer ring is made of a porous material.

[0013] Optionally, the sidewalls of the buffer ring are perpendicular to the upper surface of the wafer carrier platform.

[0014] Optionally, the angle between the sidewall of the buffer ring and the upper surface of the wafer carrier platform is an obtuse angle, which is less than or equal to 120 degrees.

[0015] Optionally, it further includes: a height adjuster located at the bottom of the buffer ring and in contact with the bottom surface of the buffer ring; a height controller adapted to control the height adjuster to adjust the position of the buffer ring in the longitudinal direction.

[0016] Optionally, it also includes: an inductively coupled radio frequency unit located above the main body of the reaction chamber; an isolation grid provided on the top of the main body of the reaction chamber; the inductively coupled radio frequency unit located above the isolation grid; and an air outlet penetrating the bottom wall of the main body of the reaction chamber.

[0017] The present invention also provides a method for operating a reaction chamber device, comprising: placing a wafer on the surface of the wafer support platform, adjusting the position of the buffer ring in a direction perpendicular to the surface of the wafer support platform; and performing a first process reaction after adjusting the position of the buffer ring in a direction perpendicular to the surface of the wafer support platform.

[0018] Optionally, the reaction chamber device further includes: a height adjuster located at the bottom of the buffer ring and in contact with the bottom surface of the buffer ring; a height controller; the height controller controls the height adjuster to adjust the position of the buffer ring in the longitudinal direction in a direction perpendicular to the upper surface of the wafer carrier platform.

[0019] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:

[0020] The reaction chamber device provided by this invention includes a wafer carrier platform located within the reaction chamber body, the surface of which is adapted to hold a wafer; and a buffer ring surrounding the wafer carrier platform. The pumping speed of the reaction source particles within the reaction chamber body is adjusted by regulating the height of the buffer ring, for example, for H... * The pumping speed of the groups is optimized to improve the uniformity of the ashing reaction rate distribution on the radial direction of the wafer, especially the adjustment of the ashing reaction rate at the wafer edge, thereby optimizing the uniformity of the ashing reaction rate distribution across the entire wafer surface.

[0021] Furthermore, the buffer ring has an opening that extends from the inner wall to the outer wall of the buffer ring. The byproduct gases from the reaction of the reaction source particles and the wafer can be promptly removed through this opening by the extraction system, preventing the accumulation of byproducts in the edge region of the wafer.

[0022] The working method of the reaction chamber device provided by the present invention involves placing the wafer on the surface of the wafer support platform, adjusting the position of the buffer ring in a direction perpendicular to the surface of the wafer support platform, and then performing the first process reaction after adjusting the position of the buffer ring in a direction perpendicular to the surface of the wafer support platform. The pumping speed of the reaction source particles within the reaction chamber body is adjusted by regulating the height of the buffer ring, for example, for H... * The pumping speed of the groups is optimized to improve the uniformity of the ashing reaction rate distribution on the radial direction of the wafer, especially the adjustment of the ashing reaction rate at the wafer edge, thereby optimizing the uniformity of the ashing reaction rate distribution across the entire wafer surface. Attached Figure Description

[0023] Figure 1 This is a schematic cross-sectional view of the reaction chamber device in one embodiment of the present invention;

[0024] Figure 2 This is a schematic diagram of the buffer ring structure in one embodiment of the present invention;

[0025] Figure 3 This is a schematic diagram of the buffer ring structure in another embodiment of the present invention;

[0026] Figure 4 This is a schematic diagram of the buffer ring structure in another embodiment of the present invention;

[0027] Figure 5 This is a schematic diagram of the buffer ring structure in another embodiment of the present invention;

[0028] Figure 6 This is a cross-sectional structural diagram of the reaction chamber device in another embodiment of the present invention. Detailed Implementation

[0029] One embodiment of the present invention provides a reaction chamber device, please refer to... Figure 1 and Figure 2 ,include:

[0030] The main body of the reaction chamber is 100.

[0031] A wafer carrier platform 110 is located within the reaction chamber body 100, and the surface of the wafer carrier platform 110 is adapted to place a wafer 10.

[0032] A buffer ring 150 surrounds the wafer carrier platform 110, the buffer ring 150 being adapted to move in a direction perpendicular to the upper surface of the wafer carrier platform 110.

[0033] refer to Figure 2 The buffer ring 150 has an opening 151 that extends from the inner wall of the buffer ring 150 to the outer wall of the buffer ring 150.

[0034] In this embodiment, a plurality of openings 151 are arranged along the circumference of the buffer ring 150.

[0035] In this embodiment, the projection shape of the opening 151 on the sidewall of the buffer ring 150 is strip-shaped, and the extending direction of the strip is perpendicular to the arrangement direction of the plurality of openings 151. In other embodiments, the projection shape of the opening on the sidewall of the buffer ring 150 is other shapes.

[0036] In this embodiment, the material of the buffer ring 150 is quartz, ceramic, bare aluminum, or anodized aluminum.

[0037] In this embodiment, the sidewall of the buffer ring 150 is perpendicular to the upper surface of the wafer carrier platform 110.

[0038] In this embodiment, it further includes: a height adjuster 180 located at the bottom of the buffer ring 150 and in contact with the bottom surface of the buffer ring 150; and a height controller 160, which is adapted to control the height adjuster 180 to adjust the position of the buffer ring 150 in the longitudinal direction.

[0039] In this embodiment, the wafer carrier platform 110 has a plurality of displacement holes penetrating the wafer carrier platform 110; pins (not shown) are respectively located in the displacement holes, the pins are adapted to support the wafer 10, and by moving the pins downward in the displacement holes, the wafer 10 is placed on the surface of the wafer carrier platform 110.

[0040] In this embodiment, the reaction chamber device is a plasma reaction device. The reaction chamber device can perform an ashing reaction.

[0041] The reaction chamber device further includes: an inductively coupled radio frequency unit located above the reaction chamber body 100; the inductively coupled radio frequency unit includes: a reaction chamber dielectric tube 120; and radio frequency antennas 140 distributed on the side of the reaction chamber dielectric tube 120.

[0042] The reaction chamber device further includes an air outlet C that penetrates the bottom wall of the reaction chamber body 100.

[0043] In this embodiment, the buffer ring 150 is in contact with the wafer carrier platform 110; in other embodiments, the buffer ring 150 is spaced apart from the wafer carrier platform 110.

[0044] An isolation grid 130 is provided on the top of the reaction chamber body 100; the inductively coupled radio frequency unit is located above the isolation grid 130.

[0045] The top of the reaction chamber medium tube 120 has an air inlet 121.

[0046] The radio frequency antenna 140 excites the gas introduced into the reaction chamber dielectric tube 120 to generate plasma. Charged particles (including ions) in the plasma are filtered out by the isolation grid 130, while chemically active groups in the plasma freely pass through the isolation grid 130 into the reaction chamber body 100 and reach the surface of the wafer 10, where they undergo a high-temperature ashing reaction with the photoresist on the surface of the wafer 10. After the high-temperature ashing reaction is completed, the wafer 10 is adjusted to the wafer transfer position by the ejector pin and then transferred out.

[0047] For photoresists with high concentrations of implants, reducing chemical reactions are often used in the removal process, such as using an H2 / N2 mixture as the reactant gas, and high-density H2O generated by plasma. * The active groups have a very high migration rate due to their light weight.

[0048] The number of height adjusters 180 can also be selected in other ways, without limitation.

[0049] In this embodiment, the height adjusters 180 are evenly distributed at the bottom of the buffer ring 150. In other embodiments, the height adjusters 180 are not evenly distributed at the bottom of the buffer ring 150.

[0050] In this embodiment, the reaction chamber device further includes: a device controller 170.

[0051] In this embodiment, the pumping speed of the reaction source particles within the reaction chamber body 100 is adjusted by regulating the height of the buffer ring 150, for example, for H...* The pumping speed of the groups is optimized to improve the uniformity of the ashing reaction rate distribution on the radial direction of wafer 10, especially the adjustment of the ashing reaction rate at the edge of wafer 10, thereby optimizing the uniformity of the ashing reaction rate distribution across the entire surface of wafer 10.

[0052] Furthermore, the buffer ring 150 has an opening 151 that extends from the inner wall of the buffer ring 150 to the outer wall of the buffer ring 150. The byproduct gases produced after the reaction of the reaction source particles and the wafer 10 can be promptly removed from the opening 151 by the extraction system, preventing the accumulation of byproducts in the edge region of the wafer 10.

[0053] In this embodiment, some of the reaction source ions can be drawn out from the opening, and some of the reaction source ions can reach the wafer surface and then move along the top surface of the buffer ring to the outside of the buffer ring, and then be drawn out.

[0054] Accordingly, one embodiment of the present invention also provides a method for operating a reaction chamber device, comprising the following steps: after placing the wafer 10 on the surface of the wafer support platform 110, adjusting the position of the buffer ring 150 in the direction perpendicular to the upper surface of the wafer support platform 110; after adjusting the position of the buffer ring 150 in the direction perpendicular to the upper surface of the wafer support platform 110, performing a first process reaction.

[0055] The position of the buffer ring 150 in the direction perpendicular to the upper surface of the wafer carrier platform 110 is adjusted as follows: the height controller 160 controls the height adjuster 180 to adjust the position of the buffer ring 150 in the longitudinal direction.

[0056] The pumping speed of the reaction source particles within the reaction chamber body 100 is adjusted by regulating the height of the buffer ring 150, for example, for H... * The pumping speed of the groups is optimized to improve the uniformity of the ashing reaction rate distribution on the radial direction of wafer 10, especially the adjustment of the ashing reaction rate at the edge of wafer 10, thereby optimizing the uniformity of the ashing reaction rate distribution across the entire surface of wafer 10.

[0057] The vertical position of the buffer ring 150 can be adjusted online in real time by the height adjuster 180.

[0058] Specifically, a wafer 10 is provided, the surface of which has a photoresist layer; after the wafer 10 is placed on the surface of the wafer carrier platform 110, the wafer carrier platform 110 heats the wafer 10, and the temperature of the wafer 10 is rapidly heated from room temperature to the reaction temperature (e.g., around 280°C). Simultaneously, the radio frequency antenna 140 excites the gas introduced into the reaction chamber dielectric tube 120 to generate plasma. Charged particles (including ions) in the plasma are filtered out by the isolation grid 130, and the chemically active groups in the plasma freely pass through the isolation grid 130 into the reaction chamber body 100 to reach the surface of the wafer 10 and perform a high-temperature ashing reaction with the photoresist on the surface of the wafer 10. During the high-temperature ashing reaction, the equipment controller 170 obtains the initial ashing reaction rate, which can be controlled online in real time. That is, different reaction steps of the same process can be set at different heights for the buffer ring. Then, the equipment controller 170 evaluates the uniformity of the ashing reaction, calculates the height that the buffer ring needs to be adjusted, and then feeds it back to the height controller 160. The height controller 160 controls several height adjusters to adjust the height and direction of the buffer ring 150, thereby achieving synchronous adjustment of the uniformity of the ashing reaction rate. After the high-temperature ashing reaction is completed for a specific time, the wafer 10 is adjusted to the wafer transfer position by the ejector pin and then transferred out.

[0059] The working method of the reaction chamber device provided in this embodiment is to adjust the pumping speed of the reaction source particles in the reaction chamber body by adjusting the height of the buffer ring. For example, for H * The pumping speed of the groups is optimized to improve the uniformity of the ashing reaction rate distribution on the radial direction of the wafer, especially the adjustment of the ashing reaction rate at the wafer edge, thereby optimizing the uniformity of the ashing reaction rate distribution across the entire wafer surface.

[0060] Another embodiment of the present invention also provides a reaction chamber device, see reference. Figure 3 The difference between this embodiment and the previous embodiment lies in the structure of the buffer ring 150a. In this embodiment, the buffer ring 150a has an opening 151a; the opening 151a extends through the buffer ring 150a from the inner wall to the outer wall, and the projection shape of the opening 151a on the side wall of the buffer ring 150a extends along the circumference of the buffer ring 150a; a plurality of openings 151a are arranged from the top to the bottom of the buffer ring 150a.

[0061] The buffer ring 150a is made of quartz, ceramic, bare aluminum, or anodized aluminum. The sidewalls of the buffer ring 150a are perpendicular to the upper surface of the wafer carrier platform.

[0062] The operation of the reaction chamber device in this embodiment is the same as that in the previous embodiment, and will not be described in detail again.

[0063] Another embodiment of the present invention also provides a reaction chamber device, see reference. Figure 4 The difference between this embodiment and the previous embodiment lies in the structure of the buffer ring 150b. In this embodiment, the buffer ring 150b has an opening 151b; the opening 151b extends from the inner wall of the buffer ring 150b to the outer wall of the buffer ring 150b, and the projection shape of the opening 151b on the side wall of the buffer ring 150b is a hole. The projection shape of the opening 151b on the side wall of the buffer ring 150b is a circular, elliptical, or irregularly shaped uniformly distributed vent hole.

[0064] The buffer ring 150b is made of quartz, ceramic, bare aluminum, or anodized aluminum. The sidewalls of the buffer ring 150b are perpendicular to the upper surface of the wafer carrier platform.

[0065] The parts of the reaction chamber device in this embodiment that are the same as those in the previous embodiment will not be described in detail.

[0066] Another embodiment of the present invention also provides a reaction chamber device, see reference. Figure 5 The difference between this embodiment and the previous embodiment is that the buffer ring 150c used is different. The material of the buffer ring 150c is a porous material, such as porous ceramic.

[0067] The parts of the reaction chamber device in this embodiment that are the same as those in the previous embodiment will not be described in detail.

[0068] Another embodiment of the present invention also provides a reaction chamber device, see reference. Figure 6 The difference between this embodiment and the previous embodiment is that the included angle between the buffer ring 150d and the upper surface of the wafer carrier platform 110 is an obtuse angle, which is less than or equal to 120 degrees.

[0069] The buffer ring 150d has an opening, and the structure of the opening can be as described above. Figures 2 to 4 Any of the following. Alternatively, the material of the buffer ring 150d may be a porous material, such as porous ceramic.

[0070] The parts of the reaction chamber device in this embodiment that are the same as those in the previous embodiment will not be described in detail.

[0071] In this embodiment, the working method of the reaction chamber device is the same as that of the reaction chamber device provided in the previous embodiment, and will not be described in detail again.

[0072] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A reaction chamber device, characterized in that, include: The main body of the reaction chamber; An air outlet penetrating the bottom wall of the main body of the reaction chamber; A wafer carrier platform is located within the reaction chamber body, and the surface of the wafer carrier platform is adapted to place a wafer; A buffer ring surrounds the wafer carrier platform, the buffer ring being adapted to move in a direction perpendicular to the upper surface of the wafer carrier platform; the buffer ring is made of a porous material; the angle between the sidewall of the buffer ring and the upper surface of the wafer carrier platform is an obtuse angle, the obtuse angle being less than or equal to 120 degrees; multiple openings are arranged from the top to the bottom of the buffer ring; the openings penetrate the buffer ring from its inner wall to its outer wall; the projection shape of the openings on the sidewall of the buffer ring extends circumferentially along the buffer ring; An isolation grid is provided on the top of the reaction chamber body; the isolation grid is used to filter out charged particles in the plasma and allow chemically active groups in the plasma to freely pass through the reaction chamber body to reach the wafer surface and perform an ashing reaction with the photoresist on the wafer surface.

2. The reaction chamber device according to claim 1, characterized in that, Also includes: A height adjuster located at the bottom of the buffer ring and in contact with the bottom surface of the buffer ring; A height controller, adapted to control the height adjuster to adjust the longitudinal position of the buffer ring.

3. The reaction chamber device according to claim 1, characterized in that, The projection shape of the opening on the side wall of the buffer ring is a hole.

4. The reaction chamber device according to claim 1, characterized in that, The buffer ring is made of quartz, ceramic, bare aluminum, or anodized aluminum.

5. The reaction chamber device according to claim 1, characterized in that, Also includes: The inductively coupled radio frequency unit is located above the main body of the reaction cavity; The inductively coupled radio frequency unit is located above the isolation grid.

6. A method of operating the reaction chamber device as described in any one of claims 1 to 5, characterized in that, include: After placing the wafer on the surface of the wafer carrier platform, adjust the position of the buffer ring in a direction perpendicular to the surface of the wafer carrier platform; After adjusting the position of the buffer ring in a direction perpendicular to the upper surface of the wafer carrier platform, the first process reaction is carried out.

7. The method of operating the reaction chamber device according to claim 6, characterized in that, The reaction chamber device further includes: a height adjuster located at the bottom of the buffer ring and in contact with the bottom surface of the buffer ring; and a height controller; The position of the buffer ring in the direction perpendicular to the surface of the wafer carrier platform is adjusted as follows: the height controller controls the height adjuster to adjust the position of the buffer ring in the longitudinal direction.

Images