Apparatus and method for forming solder bumps on a substrate

Abstract

There can be provided an apparatus and a method for forming solder bumps on a substrate. The apparatus includes: a support configured to support the substrate to be disposed thereon; a housing surrounding the support; a lid coupled to the housing to define a manufacturing space and including an edge heating zone along its periphery, the manufacturing space surrounding the support; and an oxide remover supply nozzle configured to supply an oxide remover to the manufacturing space.

Description

[0001] This application claims priority to Korean Patent Application No. 10-2019-0110771, filed on Sep. 6, 2019, with the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0002] The inventive concept relates to an apparatus and / or method for manufacturing solder bumps, and more particularly, to an apparatus and / or method for manufacturing solder bumps that reduces product defects and increases productivity. Background Art

[0003] Fluxless solder bumps that do not use flux can be applied to wafer-level packages. In a solder bump reflow apparatus for reflowing solder bumps, particles can easily deposit therein and fall onto a substrate to be processed, resulting in product defects. Summary of the Invention

[0004] The inventive concept provides an apparatus for manufacturing solder bumps, the apparatus reducing product defects and increasing productivity.

[0005] The inventive concept provides a method for manufacturing solder bumps, the method reducing product defects and increasing productivity.

[0006] According to an exemplary embodiment of the inventive concept, an apparatus for forming solder bumps on a substrate may include: a support configured to support the substrate to be disposed on the support; a housing surrounding the support; a cover coupled to the housing to define a manufacturing space surrounding the support; and an oxide remover supply nozzle configured to supply an oxide remover to the manufacturing space, wherein the cover includes an edge heating zone along a perimeter of the cover.

[0007] According to an exemplary embodiment of the inventive concept, an apparatus for forming solder bumps on a substrate may include: a support configured to support the substrate located on the support and including solder bumps; a housing surrounding the support; a cover coupled to the housing to define a manufacturing space surrounding the support; and an oxide remover supply nozzle configured to supply an oxide remover to the manufacturing space to remove oxides from a surface of the solder bumps, wherein the cover includes a first inner surface parallel to a surface of the substrate and a second inner surface perpendicular to the surface of the substrate, and the first inner surface and the second inner surface are connected to each other at a corner region of the cover by a third inner surface between the first inner surface and the second inner surface, and the third inner surface of the cover has a curved surface having a first radius of curvature.

[0008] According to an exemplary embodiment of the inventive concept, an apparatus for forming solder bumps on a substrate (the apparatus including a fluxless reflow apparatus for reflowing the solder bumps) may include: a support configured to support the substrate; a housing surrounding the support; a lid coupled to the housing to define a manufacturing space surrounding the support; and an oxide remover supply nozzle configured to supply an oxide remover to the manufacturing space, wherein the lid includes an edge heating zone along a perimeter of the lid.

[0009] According to an exemplary embodiment of the inventive concept, a method of forming solder bumps may include: disposing a substrate including solder bumps on a support in a reflow space defined by a housing and a lid, applying energy to an edge heating zone disposed along a perimeter of the lid, supplying an oxide remover to the substrate, and heating the substrate to reflow the solder bumps. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Exemplary embodiments of the inventive concept will be more clearly understood from the following detailed description in conjunction with the accompanying drawings, in which:

[0011] Figure 1 is a perspective view for describing an apparatus for manufacturing solder bumps according to an exemplary embodiment;

[0012] Figure 2 is a partial cross-sectional view taken along line II-II' of Figure 1 ;

[0013] Figure 3 is Figure 2 a partial enlarged view of region III of

[0014] Figure 4 is a conceptual diagram showing a principle of removing tin oxide by formic acid;

[0015] Figure 5A is a partial enlarged view showing an air flow near an edge heating zone according to an exemplary embodiment;

[0016] Figure 5B is a partial enlarged view showing an air flow near a corner region of a lid of a reflow apparatus according to the related art;

[0017] Figure 6 is a schematic diagram showing a cross-sectional surface of a reflow region of an apparatus for manufacturing solder bumps according to another exemplary embodiment;

[0018] Figure 7 is a schematic diagram showing a cross-sectional surface of a reflow region of an apparatus for manufacturing solder bumps according to another exemplary embodiment;

[0019] Figure 8is a schematic diagram showing a cross-sectional surface of a reflow area of an apparatus for manufacturing solder bumps according to another exemplary embodiment;

[0020] Figure 9 is a schematic diagram showing a cross-sectional surface of a reflow area of an apparatus for manufacturing solder bumps according to another exemplary embodiment; and

[0021] Figure 10 is a flowchart showing a method of sequentially manufacturing solder bumps according to an exemplary embodiment. DETAILED DESCRIPTION

[0022] Although the terms "same" or "identical" are used in the description of the exemplary embodiments, it should be understood that there may be some inaccuracies. Thus, when an element (or value or direction (e.g., "parallel" or "perpendicular")) is referred to as being the same as another element, it should be understood that the element (or value or direction) is the same as the other element (or the other value or the other direction) within the desired manufacturing or operating tolerance range (e.g., ±10%).

[0023] When the terms "about" or "substantially" are used in this specification in combination with a numerical value or a direction, it is intended that the associated numerical value or direction include the manufacturing or operating tolerance (e.g., ±10%) around the stated numerical value or direction. Further, when the words "generally" and "substantially" are used in combination with a geometric shape, it is intended that the precision of the geometric shape is not required, but the boundaries of the shape are within the disclosed range. Further, whether a numerical value, a direction, or a shape is modified by "about" or "substantially", it will be understood that these values, directions, or shapes should be interpreted as including the manufacturing or operating tolerance (e.g., ±10%) around the stated numerical value, direction, or shape.

[0024] Figure 1 is a perspective view of an apparatus for manufacturing solder bumps according to an exemplary embodiment. In some exemplary embodiments, an apparatus for manufacturing solder bumps (hereinafter referred to as a solder bump manufacturing apparatus) may represent an apparatus for manufacturing solder bumps by a reflow process, but is not limited thereto. Thus, those of ordinary skill in the art can understand that the "solder bump manufacturing apparatus" described below is an example of a solder bump manufacturing apparatus, and the "reflow space" is an example of a manufacturing space for forming solder bumps.

[0025] Referring to Figure 1 , the solder bump reflow apparatus 100 may include a loading member 101, a first transfer device 102, a reflow area 100R, a second transfer device 105, and an unloading member 106.

[0026] The loading member 101 can provide a space for accommodating a plurality of substrates W to be loaded into the reflow area 100R. The loading member 101 can accommodate a plurality of substrates W with the effective surfaces of each substrate to be processed facing upward. In some example embodiments, a plurality of loading members 101 can be provided.

[0027] The first transfer device 102 can transfer the substrate W accommodated in the loading member 101 to the reflow area 100R. In some example embodiments, the first transfer device 102 can be, for example, a robotic arm including a blade-type end effector.

[0028] The reflow area 100R can include a plurality of processing spaces for processing a plurality of substrates W. Figure 1 In, the reflow area 100R is shown as including six processing spaces, but is not limited thereto, and can include more or fewer than six processing spaces. In some example embodiments, the reflow area 100R can rotate based on the processing state of the substrate W.

[0029] Each of the plurality of processing spaces can include a housing 110 and a lid 120, and the lid 120 is combined with the housing 110 to define a reflow space. The substrate can be accommodated or conveyed into the reflow space and can be reflow processed. The reflow space can be opened or closed by the relative movement of the lid 120 and the housing 110. In some example embodiments, the lid 120 can be lifted, and then, the substrate W can be loaded into the reflow space. In some example embodiments, the housing 110 can be lowered, and then the substrate can be loaded into the reflow space.

[0030] The second transfer device 105 can transfer the substrate W for which the reflow processing has been completed in the reflow area 100R to the unloading member 106. Similar to the first transfer device 102, the second transfer device 105 can be a robotic arm including a blade-type end effector.

[0031] The unloading member 106 can provide a space for accommodating a plurality of substrates W unloaded from the reflow area 100R, and the plurality of substrates W all include bumps and have undergone a bump reflow process.

[0032] Figure 2 is a partial cross-sectional view taken along the Figure 1 line II-II' of.

[0033] Referring to Figure 2 , the reflow area 100R can include a support member 130 configured to support the substrate W to be disposed thereon, and a housing 110 and a lid 120 surrounding the support member 130. The lid 120 can be combined with the housing 110 to define a reflow space RS surrounding the support member 130.

[0034] Figure 3 Is Figure 2 A partial enlarged view of Region III of

[0035] Referring to Figure 3 , the substrate W can be disposed on the support member 130. The substrate W can include a passivation layer 213 and a first insulating pattern 231, and the passivation layer 213 and the first insulating pattern 231 are disposed on the first surface 218 of the semiconductor substrate 210 to expose the chip pads 211. In addition, a wiring pattern 240 for redistribution can be disposed on the first insulating pattern 231, and a second insulating pattern 233 for insulating the wiring pattern 240 can be disposed on the first insulating pattern 231.

[0036] The second insulating pattern 233 can expose a part of the wiring pattern 240. A seed metal layer 251m can be formed on the wiring pattern 240 exposed by the second insulating pattern 233, and an under-bump metal 253 and a solder bump 257 can be formed from the seed metal layer 251m.

[0037] Although not shown in Figure 3 , a mask layer for exposing the positions where the under-bump metal 253 and the solder bump 257 will be formed can be provided before forming the under-bump metal 253 and the solder bump 257. The under-bump metal 253 and the solder bump 257 can be formed on the seed metal layer 251m exposed by the mask layer through an electroplating process or an electroless plating process. In this case, the solder bump 257 can grow at the exposed positions and exceed the top of the mask layer. Therefore, as shown in Figure 3 , the solder bump 257 can have a cross-sectional shape in the form of a mushroom. Subsequently, the mask layer can be removed, and the seed metal layer 251m and the under-bump metal 253 exposed after removing the mask layer can be removed. Therefore, a substrate W having the solder bump 257 disposed thereon can be obtained as shown in Figure 3 .

[0038] As shown in Figure 3 , since a flux for attaching the solder bump 257 to the substrate W is not used, the solder bump formed by this process can be referred to as a fluxless solder bump.

[0039] The first insulating pattern 231, the second insulating pattern 233, and the passivation layer 213 can each include one or more materials such as silicon nitride, silicon oxide, and silicon oxynitride.

[0040] The seed metal layer 251m, the wiring pattern 240, and the chip pad 211 may each include any conductive material. For example, the seed metal layer 251m, the wiring pattern 240, and the chip pad 211 may each include tungsten (W), copper (Cu), zirconium (Zr), titanium (Ti), tantalum (Ta), aluminum (Al), ruthenium (Ru), palladium (Pd), platinum (Pt), cobalt (Co), nickel (Ni), or a combination thereof.

[0041] The under bump metal 253 may include Ti, Cu, chromium (Cr), W, Ni, Al, Pd, gold (Au), or a combination thereof.

[0042] The solder bump 257 may include a metal alloy containing tin (Sn) as a main component. For example, the solder bump 257 may include an alloy of Sn and one or more materials among silver (Ag), indium (In), bismuth (Bi), antimony (Sb), Cu, zinc (Zn), and lead (Pb). In some exemplary embodiments, the solder bump 257 may include an alloy containing 3 wt% of Ag, 0.5 wt% of Cu, and the balance of Sn.

[0043] As Figure 3 shown, the solder bump having a mushroom-shaped cross-section can be reflowed into a spherical shape by the solder bump reflow apparatus 100.

[0044] Referring again to Figure 2 , the substrate W can be supported by the support 130. The substrate W can be disposed on the support 130 such that its effective surface faces upward. The substrate W can be fixed to the support 130 by, for example, vacuum or electrostatic attraction.

[0045] The support heating member 132 for heating the substrate W can be disposed in the support 130. In some exemplary embodiments, the support heating member 132 can be heated at a temperature of about 220°C to about 280°C for heating the substrate W.

[0046] In some exemplary embodiments, the support 130 can be configured to rotate to uniformly heat the substrate W.

[0047] The housing 110 may include a recess 110R that houses the support 130 and at least partially surrounds the support 130.

[0048] The cover 120 can be disposed on the support 130. The cover can be located at a position higher than that of the housing 110. The cover 120 and the housing 110 can together define a reflow space RS surrounding the support 130.

[0049] In some example embodiments, the lid 120 may include a first portion (or referred to as the first lid portion) 120a and a second portion (or referred to as the second lid portion) 120b. The first portion 120a is substantially parallel to the surface (e.g., the top surface) of the substrate W (or the support 130), and the second portion 120b is substantially perpendicular to the surface of the substrate W (or the support 130). In some example embodiments, the first portion 120a that is substantially parallel to the surface of the substrate W may indicate that the angle between any portion of the first portion 120a and the surface of the substrate W is from about 0 degrees to about 30 degrees. In some example embodiments, the second portion 120b that is substantially perpendicular to the surface of the substrate W may indicate that the angle between any portion of the second portion 120b and the surface of the substrate W is from about 70 degrees to about 90 degrees.

[0050] In some example embodiments, the angle between the first portion 120a and the second portion 120b may be from about 80 degrees to about 140 degrees. In some example embodiments, the angle between the first portion 120a and the second portion 120b may be from about 85 degrees to about 100 degrees. In some example embodiments, the angle between the first portion 120a and the second portion 120b may be about 90 degrees.

[0051] The reflux region 100R may include an oxide remover supply nozzle 152 for supplying an oxide remover to the reflux space RS to remove oxides from the surface of the solder bumps 257. The oxide remover may be, for example, formic acid (HCOOH). The oxide remover supply nozzle 152 may be coupled to the lid 120.

[0052] As described above, the solder bumps 257 may include a composition containing Sn as a main component, and the surface of the solder bumps 257 will include a natural oxide containing tin oxide as a main component. Since tin oxide reduces the sphericity (sphericity indicates the degree of proximity of the solder bump to a sphere after reflux), the process of removing tin oxide may be performed before or simultaneously with reflux.

[0053] Figure 4 is a conceptual diagram showing the principle of removing tin oxide by formic acid.

[0054] Referring to Figure 4 , tin oxide will form on the surface of the solder bumps including tin as a main component. Tin oxide will be a natural oxide naturally formed by oxygen in the air.

[0055] When gaseous formic acid is provided to the surface of tin oxide, as a result of the reaction between tin oxide and formic acid, Sn(COOH) as an organometallic compound may be generated 4。This disclosure does not intend to bind the inventive concept to a specific theoretical principle. However, the reaction between metal oxide and formic acid can be expressed by the following equations according to temperature conditions (here, Me can represent a metal).

[0056] (When the temperature is higher than about 150 °C)

[0057] MeO + 2HCOOH → Me(COOH) 2 + H 2 O

[0058] (When the temperature is higher than about 200 °C)

[0059] Me(COOH) 2 → Me + CO 2 + H 2

[0060] H 2 + MeO → Me + H 2 O

[0061] When this reaction equation is applied to tin oxide, Sn(COOH) as an organometallic compound can be generated based on the following reaction equation 4 。

[0062] SnO 2 + 4HCOOH → Sn(COOH) 4 + 2H 2 O

[0063] Sn(COOH) as an organometallic compound generated in this way 4 will not deposit on the inner surface of the cover 120 and can be discharged through the discharge nozzle 154 at a temperature higher than a certain temperature. The discharge nozzle 154 can be located at the central part of the cover 120 and is configured to discharge the organometallic compound to the outside of the reflux space RS. In some exemplary embodiments, a heater (not shown) can be provided at the elbow part of the discharge nozzle 154 to reduce or prevent the deposition of the organometallic compound on the elbow part.

[0064] The internal pressure of the reflux space RS can generally be maintained equal to the atmospheric pressure, and the flow rate can be controlled to maintain the balance between the oxide remover (e.g., formic acid) supplied through the oxide remover supply nozzle 152 and the reaction product discharged through the discharge nozzle 154. In some exemplary embodiments, the oxide remover can be supplied to the reflux space RS together with an inert carrier gas. The inert carrier gas can be, for example, a gas with low activity such as nitrogen, or an inert gas such as helium, neon, and argon.

[0065] Since the temperature of the corner portion (or edge portion) 120E of the cover 120 is relatively low compared to other portions of the cover 120, the organometallic compound is likely to be deposited on the inner surface of the edge portion 120E, and the organometallic compound that has been deposited and accumulated may fall onto the substrate W, resulting in product defects.

[0066] [Edge heating zone]

[0067] Referring again to Figure 2 , the cover 120 may include an edge heating zone 140 disposed along the perimeter of the cover 120. As described above, since the organometallic compound is likely to be deposited on the edge portion 120E of the cover 120 when the temperature of the edge portion 120E of the cover 120 is relatively low, the edge heating zone 140 may be disposed along the perimeter of the cover 120 to increase the temperature of the edge portion 120E of the cover 120, thereby reducing or preventing the deposition of the organometallic compound.

[0068] In some example embodiments, the edge heating zone 140 may be disposed along the perimeter of the cover 120 in an annular shape. The edge heating zone 140 may be, for example, a resistance heater using a heating wire including a metallic material (e.g., tungsten (W) or rhenium (Re)), an induction heater using an induction coil, but the example embodiments are not limited thereto.

[0069] In some example embodiments, the edge heating zone 140 may include an inverted L-shaped cross-section. The edge heating zone 140 may include a first heating portion that extends in a horizontal direction substantially parallel to the surface of the substrate W and is in the first portion 120a. In addition, the edge heating zone 140 may include a second heating portion that extends in a vertical direction substantially perpendicular to the surface of the substrate W and is in the second portion 120b.

[0070] In some example embodiments, when the edge heating zone 140 is projected onto a plane including the support 130, the projection of the edge heating zone 140 may not overlap with the support 130. In addition, when the edge heating zone 140 is projected onto a plane including the support 130, the projection of the edge heating zone 140 may have an annular shape.

[0071] As Figure 2 shown, when the edge heating zone 140 is projected onto a plane including the support 130, the inner peripheral portion of the edge heating zone 140 may be spaced apart (or distanced) d from the outer peripheral portion of the support 130. In other words, when viewed from a plan view, the edge heating zone 140 may be spaced apart from the support 130 by an interval d such that the inner peripheral portion of the edge heating zone 140 may be spaced apart from the outer peripheral portion of the support 130 by the interval d. In some example embodiments, the interval d may be from about 1 mm to about 5 mm, or may be from about 2 mm to about 4 mm.

[0072] Since the projection of the edge heating region 140 does not overlap with the support member 130, interference caused by the operation of the edge heating region 140 during the reflow process of the substrate W performed by the support member 130 can be reduced or prevented.

[0073] For example, when the interval d is too small, the operation of the edge heating region 140 can interfere with the reflow process of the substrate W. For example, when the interval d is too large, space may be wasted and the manufacturing cost may increase.

[0074] In some exemplary embodiments, the edge heating region 140 may include a portion that extends in the radial direction of the support member 130 in the first portion 120a. In some exemplary embodiments, the length D1 of the edge heating region 140 that extends in the radial direction of the support member 130 in the first portion 120a may be from about 20 mm to about 100 mm, from about 30 mm to about 80 mm, or from about 35 mm to about 65 mm. In some exemplary embodiments, the length D1 of the edge heating region 140 that extends in the radial direction of the support member 130 in the first portion 120a may be about 45 mm.

[0075] For example, when the length D1 is too large, the edge heating region 140 will overlap with the central heating member 122 of the central region CR to be described below, and because of this, energy may be undesirably wasted. In addition, when the length D1 is too small, the heating effect of the edge heating region 140 will be reduced, resulting in a reduction in the effect of preventing or reducing the deposition of organometallic compounds.

[0076] In some exemplary embodiments, the edge heating region 140 may include an edge heating portion that is in the second portion 120b and extends in a direction substantially perpendicular to the surface of the support member 130. In some exemplary embodiments, the length D2 of the edge heating portion may be from about 10 mm to about 50 mm, from about 15 mm to about 45 mm, or from about 20 mm to about 40 mm. In some exemplary embodiments, the length D2 may be about 34 mm.

[0077] For example, when the length D2 is too large, the edge heating region 140 will overlap with the support member heating member 132 described above, and thus energy may be undesirably wasted. In addition, when the length D2 is too small, the heating effect of the edge heating region 140 will be reduced, resulting in a reduction in the effect of reducing or preventing the deposition of organometallic compounds.

[0078] The central heating component 122 disposed in the first part 120a may be separated from the edge heating zone 140 by a first distance D3. In some example embodiments, the shortest distance between the central heating component 122 and the edge heating zone 140 may be the first distance D3. The first distance D3 may be, for example, from about 1 mm to about 50 mm, from about 2 mm to about 45 mm, from about 3 mm to about 40 mm, from about 4 mm to about 30 mm, or from about 5 mm to about 20 mm.

[0079] The central heating component 122 may be controlled by a first controller C1. The edge heating zone 140 may be controlled by a second controller C2. In some example embodiments, the first controller C1 and the second controller C2 may be controlled by a cascaded master controller MC. In some example embodiments, the master controller MC may be omitted. When the master controller MC is omitted, the first controller C1 and the second controller C2 may be independently controlled. The controllers C1, C2, and MC may include a processing circuit (such as hardware including logic circuits), a hardware / software combination (such as a processor executing software), or a combination thereof. For example, the processing circuit may more specifically include, but is not limited to, a central processing unit (CPU), an arithmetic logic unit (ALU), a digital signal processor, a microcomputer, a field programmable gate array (FPGA), a system on a chip (SoC), a programmable logic unit, a microprocessor, an application specific integrated circuit (ASIC), etc.

[0080] [Inner curved surface portion of the edge]

[0081] Figure 5A is a partial enlarged view showing the air flow near the edge heating zone 140 according to an example embodiment. Figure 5B is a partial enlarged view showing the air flow near the corner region of the lid of a reflux device according to the prior art.

[0082] First, referring to Figure 5B , the horizontal inner surface of the first part 120a of the lid 120 may be perpendicular to the vertical inner surface of the second part 120b of the lid 120, and a stagnant zone V may be easily formed near the corner region where the horizontal inner surface and the vertical inner surface meet. Eddies of gas vortices may be formed in the stagnant zone V, and heat transfer and mass transfer between the stagnant zone and the bulk zone may be reduced. In addition, in the stagnant zone V, the temperature of the gas may be reduced and the moving speed may be reduced. Under such conditions, the organometallic compound may easily lose its momentum and may be deposited in the corner region.

[0083] Referring to Figure 5A , a curved surface portion may be provided in the corner region of the lid 120, so that it will not be like Figure 5BA stagnation region is formed in that way. In other words, the first part 120a of the cover 120 and the second part 120b of the cover 120 can be connected to each other at the edge region, so that the inner surface of the cover 120 has a curved surface with a first radius of curvature at the corner region. The present disclosure does not intend to bind the inventive concept to a specific theoretical principle. However, the laminar flow of the gas may not form turbulence due to the curved surface portion in the corner region. Here, the laminar flow can represent a hydrodynamic flow in which there is no lateral mixing in the direction transverse to the flow direction and the fluid particles move along the streamline, and can have a flow condition with a Reynolds number of about 2100 or less, about 2000 or less, or about 1800 or less.

[0084] Therefore, the air flow can be maintained at a certain level or higher in the corner region without generating turbulence due to the generation of the stagnation region. Therefore, the deposition of the organometallic compound can be reduced or prevented. In addition, since the air flow is active, heat transfer and mass transfer can be carried out relatively smoothly in the reflux space, and the deposition of the organometallic compound can be reduced or prevented.

[0085] Return reference Figure 2 , the first part 120a of the cover 120 may include a first inner surface part 120S2 facing the reflux space RS. The second part 120b of the cover 120 may include a second inner surface part 120S1 facing the reflux space RS. In addition, the cover 120 may include a third inner surface part 120S3 connecting the first inner surface part 120S2 to the second inner surface part 120S1.

[0086] The third inner surface part 120S3 may be a curved surface having a first radius of curvature r, and the first radius of curvature r may be, for example, about 5 mm to about 27 mm, or about 10 mm to about 20 mm. In some exemplary embodiments, the first radius of curvature r may be about 15 mm.

[0087] In some exemplary embodiments, the first inner surface part 120S2 may be tangent to the third inner surface part 120S3 at the point where the first inner surface part 120S2 meets the third inner surface part 120S3. In some exemplary embodiments, the second inner surface part 120S1 may be tangent to the third inner surface part 120S3 at the point where the second inner surface part 120S1 meets the third inner surface part 120S3.

[0088] In some exemplary embodiments, the cross-sectional surface of the third inner surface part 120S3 may be an arc that is part of a circle. For example, the vertical cross-sectional surface of the third inner surface part 120S3 that is cut through the center CL of the cover 120 may be a quarter circle with the first radius of curvature r as the radius.

[0089] For example, when the first radius of curvature r is too large, it may be difficult to smoothly connect the first inner surface portion 120S2 to the third inner surface portion 120S3 and / or smoothly connect the second inner surface portion 120S1 to the third inner surface portion 120S3. Accordingly, there may be a possibility that the organometallic compound is deposited on the inner surface.

[0090] For example, when the first radius of curvature r is too small, the effect obtained by providing the third inner surface portion 120S3 having a curved surface between the first inner surface portion 120S2 and the second inner surface portion 120S1 may be reduced. That is, a stagnant region may be formed adjacent to the third inner surface portion 120S3, and accordingly, there may be a possibility that the organometallic compound is deposited on the inner surface.

[0091] As described above with reference to Figure 5A the airflow flowing adjacent to the edge portion 120E of the lid 120 can ensure a smooth laminar flow by utilizing the third inner surface portion 120S3 as a curved surface. Accordingly, deposition of the organometallic compound on the inner surface can be prevented or reduced. Further, whether the airflow maintains laminar flow can depend at least in part on the viscosity of the gas, and since the viscosity of the gas also depends on the temperature of the gas, heating the gas by the edge heating zone 140 can contribute to maintaining laminar flow.

[0092] The temperature of the gas flowing adjacent to the edge heating zone 140 can be increased by about 20 °C to about 50 °C due to the edge heating zone 140. That is, when the edge heating zone 140 is operating, the temperature of the gas adjacent to the third inner surface portion 120S3 can be increased by about 20 °C to about 50 °C compared to when the edge heating zone 140 is not operating. In other words, the second controller C2 can control the temperature of the edge heating zone 140 such that the temperature adjacent to the curved surface of the lid 120, for example, is increased by about 20 °C to about 50 °C. The second controller C2 can be controlled by the main controller MC. As described above, the second controller C2 can include a processing circuit (such as hardware including logic circuits), a hardware / software combination (such as a processor executing software), or a combination thereof. For example, the processing circuit can more specifically include, but is not limited to, a central processing unit (CPU), an arithmetic logic unit (ALU), a digital signal processor, a microcomputer, a field programmable gate array (FPGA), a system on chip (SoC), a programmable logic unit, a microprocessor, an application specific integrated circuit (ASIC), and the like.

[0093] Figure 6 is a schematic cross-sectional view showing the reflow region 100R of a solder bump reflow apparatus according to another exemplary embodiment. Compared with the reflow region shown in Figure 2 compared to the reflow region shown in Figure 6The reflow region 100R shown in [Figure] can differ only in terms of the cross-sectional shape of the edge heating zone, while other configurations can be the same. Therefore, such differences will be mainly described hereinafter.

[0094] Referring to Figure 6 , the edge heating zone can be set as a horizontal edge heating zone 140a extending in a direction substantially parallel to the top surface of the support member 130 (or the substrate W), and can not include a portion extending in a direction substantially perpendicular to the top surface of the support member 130 (or the substrate W). Therefore, the horizontal edge heating zone 140a can be provided in the first portion 120a.

[0095] Figure 7 is a schematic diagram showing a cross-sectional surface of the reflow region 100R of a solder bump reflow apparatus according to another exemplary embodiment. Compared with the reflow region shown in Figure 2 , Figure 7 the reflow region 100R shown in [Figure] can differ only in terms of the cross-sectional shape of the edge heating zone, while other configurations can be the same. Therefore, such differences will be mainly described hereinafter.

[0096] Referring to Figure 7 , the edge heating zone can be set as a vertical edge heating zone 140b extending in a direction substantially perpendicular to the top surface of the support member 130 (or the substrate W), and can not include a portion extending in a direction substantially parallel to the top surface of the support member 130 (or the substrate W). Therefore, the vertical edge heating zone 140b can be provided in the second portion 120b.

[0097] In Figure 6 and Figure 7 's exemplary embodiments, the horizontal edge heating zone 140a and the vertical edge heating zone 140b can have different heating characteristics. For example, compared with the vertical edge heating zone 140b of Figure 7 , Figure 6 's horizontal edge heating zone 140a can be better in terms of the characteristic of reducing the deposition of organometallic compounds, and compared with the horizontal edge heating zone 140a of Figure 6 , Figure 7 's vertical edge heating zone 140b can achieve a stable reflow process because of less interference caused by the support heating member 132 or the central heating member 122.

[0098] Figure 8 is a schematic diagram showing a cross-sectional surface of the reflow region 100R of a solder bump reflow apparatus according to another exemplary embodiment. Compared with the reflow region shown in Figure 2 , Figure 8The reflow region 100R shown in [reference] may differ only in the configuration of the edge heating zone, while other configurations may be the same. Therefore, such differences will be mainly described hereinafter.

[0099] Referring to Figure 8 , the edge heating zone 140 may include a horizontal edge heating zone 140a and a vertical edge heating zone 140b. The horizontal edge heating zone 140a is located in the first part 120a and extends in a direction substantially parallel to the top surface of the support 130 (or the substrate W) in the first part 120a. The vertical edge heating zone 140b is located in the second part 120b and extends in a direction substantially perpendicular to the top surface of the support 130 (or the substrate W). The horizontal edge heating zone 140a may be separated from the vertical edge heating zone 140b.

[0100] Since the horizontal edge heating zone 140a is separated from the vertical edge heating zone 140b, the horizontal edge heating zone 140a and the vertical edge heating zone 140b can be controlled independently. In some exemplary embodiments, the horizontal edge heating zone 140a and the vertical edge heating zone 140b may be controlled to have different temperatures. The temperature of each of the horizontal edge heating zone 140a and the vertical edge heating zone 140b can be controlled separately so that the convection-based air flow is optimally maintained adjacent to the third inner surface portion 120S3.

[0101] Figure 9 is a schematic cross-sectional view showing the reflow region 100R of a solder bump reflow apparatus according to another exemplary embodiment. Compared with the reflow region shown in Figure 2 , Figure 9 the reflow region 100R shown in [reference] may differ only in the configuration of the edge heating zone, while other configurations may be the same. Therefore, such differences will be mainly described hereinafter.

[0102] Referring to Figure 9 , a heating jacket 140j including an edge heating zone 140c may be attached along the periphery of the cover body member b120.

[0103] The cover body member b120 may include a horizontally extending portion b120a and a vertically extending portion b120b. The horizontally extending portion b120a is substantially parallel to the surface (e.g., the top surface) of the substrate W (or the support 130) to be processed, and the vertically extending portion b120b is substantially perpendicular to the surface (e.g., the top surface) of the substrate W (or the support 130) to be processed. The horizontally extending portion b120a may correspond to Figure 2 the first part 120a of the cover 120 in [[reference]]. The vertically extending portion b120b may correspond to Figure 2 the second part 120b of the cover 120 in [[reference]].

[0104] The edge heating zone 140c may be protected by a heating jacket 140j. For example, the heating jacket 140j may include a material having strong heat resistance and electrical insulation properties, such as polytetrafluoroethylene.

[0105] In some example embodiments, the heating jacket 140j may include a horizontal jacket portion 140jh that extends in contact with the horizontally extending portion b120a. In some example embodiments, the heating jacket 140j may be configured to include a vertical jacket portion 140ji that extends in contact with the vertically extending portion b120b.

[0106] In Figure 9 , the edge heating zone 140c is shown as including a horizontally extending portion extending in a direction substantially parallel to the top surface of the substrate W or the support 130 and a vertically extending portion extending in a direction substantially perpendicular to the top surface of the substrate W or the support 130. However, according to some example embodiments, the edge heating zone 140c may include only one of the horizontally extending portion and the vertically extending portion as in Figure 6 and Figure 7 .

[0107] The heat generated in the edge heating zone 140c may be transferred to the lid body member b120 through the heating jacket 140j based on conduction, and then may be transferred to the gas in the reflux space RS.

[0108] In some example embodiments, the heating jacket 140j may extend along the periphery of the lid body member b120. In some example embodiments, the heating jacket 140j may not extend to the central region CR of the lid body member b120. The central heating member 122 may be disposed in the central region CR of the lid body member b120. The central heating member 122 may supply heat for refluxing the substrate W from the upper portion of the substrate W. In addition, the central heating member 122 may promote the discharge of reaction products generated due to the reaction between the oxide remover and the oxide through the discharge nozzle 154.

[0109] Figure 10 is a flowchart showing a method of sequentially reflowing solder bumps according to an example embodiment.

[0110] Combined with Figure 2 Refer to Figure 10 , in operation S110, the substrate W may be provided to the support 130 in the reflux space RS. The substrate W may include solder bumps that have not been reflowed and need to be reflowed. For example, the solder bumps may be solder bumps without flux in the solder bump forming process. The substrate W may be loaded onto the support 130 and unloaded from the support 130 through, for example, the robotic arms 102 and 105 (see Figure 1 ).

[0111] Subsequently, in operation S120, energy can be applied to the edge heating zone 140 disposed along the periphery of the lid 120. The heat generated in the edge heating zone 140 due to the applied energy can be transferred to the reflow space RS.

[0112] In operation S130, an oxide remover can be supplied to the substrate W. As described above, the oxide remover can remove the natural oxide formed in the solder bumps. This has been described in detail above with reference to Figure 4 which, therefore, its detailed description is omitted.

[0113] Subsequently, in operation S140, the substrate W can be heated to reflow the solder bumps. Here, the heating of the substrate W can be performed by the support heating member 132 and / or the center heating member 122.

[0114] In some example embodiments, the support heating member 132 can heat the solder bumps at about 220°C to about 280°C, about 230°C to about 270°C, or about 240°C to about 260°C to reflow the solder bumps. In some example embodiments, the center heating member 122 can heat the solder bumps at about 220°C to about 240°C, about 210°C to about 250°C, or about 160°C to about 200°C to reflow the solder bumps.

[0115] Although in Figure 10 operation S120 of applying energy to the edge heating zone 140, operation S130 of supplying the oxide remover to the substrate W, and operation S140 of heating the substrate W are shown as being performed sequentially, the example embodiments of the inventive concept are not limited thereto. In some example embodiments, operation S120 of applying energy to the edge heating zone 140, operation S130 of supplying the oxide remover to the substrate W, and operation S140 of heating the substrate W can be performed in any order, or one operation can be performed while another operation is being performed.

[0116] Subsequently, in operation S150, the substrate W can be cooled after reflow is completed, and then the substrate W can be unloaded to the outside of the reflow space RS.

[0117] By using the apparatus and / or method for manufacturing solder bumps according to the example embodiments, the amount of organometallic compounds deposited therein can be reduced. Therefore, product defects can be reduced and the cleaning interval can be increased, thereby improving productivity.

[0118] Although the inventive concept has been specifically shown and described with reference to the disclosed example embodiments of the inventive concept, it will be understood that various changes in form and detail can be made therein without departing from the spirit and scope of the claims.

Claims

1. An apparatus for forming solder bumps on a substrate, the apparatus comprising: a support configured to support a substrate to be disposed on the support; a housing surrounding the support; a lid coupled to the housing to define a manufacturing space surrounding the support; and an oxide remover supply nozzle configured to supply an oxide remover to the manufacturing space, wherein the lid includes an edge heating zone along a perimeter of the lid, and wherein when the edge heating zone is projected onto a plane including the support, the edge heating zone does not overlap with the support.

2. The apparatus according to claim 1, wherein the lid includes a first portion parallel to a surface of the substrate and a second portion perpendicular to the surface of the substrate, and the edge heating zone is located in the first portion of the lid.

3. The apparatus according to claim 2, wherein the edge heating zone is located in the second portion of the lid.

4. The apparatus according to claim 1, wherein when viewed in a plan view, the edge heating zone is separated from the support by a distance of 1 mm to 5 mm.

5. The apparatus according to claim 2, wherein the edge heating zone extends in a radial direction of the support in the first portion and has a size of 20 mm to 100 mm.

6. The apparatus according to claim 1, wherein the lid includes a first portion parallel to a surface of the substrate and a second portion perpendicular to the surface of the substrate, and the edge heating zone is located in the second portion of the lid.

7. The apparatus according to claim 6, wherein the edge heating zone has a size of 10 mm to 50 mm in a direction perpendicular to a plane including the support in the second portion.

8. The apparatus according to claim 1, wherein the lid includes a first portion parallel to a surface of the substrate and a second portion perpendicular to the surface of the substrate, and the first portion and the second portion of the lid are connected to each other at a corner region such that an inner surface of the lid has a curved surface with a first radius of curvature at the corner region.

9. The apparatus according to claim 8, wherein the first radius of curvature is 5 mm to 27 mm.

10. The apparatus according to claim 1, wherein the lid is located at a position higher than a position of the housing, the lid includes a lid main body member and a heating jacket existing along a perimeter of the lid main body member, and the edge heating zone is located in the heating jacket.

11. The apparatus according to claim 10, wherein the lid main body member includes a horizontally extending portion parallel to a surface of the substrate and a vertically extending portion perpendicular to the surface of the substrate, the heating jacket includes a horizontal jacket portion extending in contact with the horizontally extending portion and a vertical jacket portion extending in contact with the vertically extending portion, and at least a first portion of the edge heating zone is located in the horizontal jacket portion and at least a second portion of the edge heating zone is located in the vertical jacket portion.

12. An apparatus for forming solder bumps on a substrate, the apparatus comprising: a support configured to support a substrate located on the support and including solder bumps; a housing surrounding the support; a lid coupled to the housing to define a manufacturing space surrounding the support; and An oxide remover supply nozzle configured to supply an oxide remover to a manufacturing space to remove oxide from the surface of solder bumps. Wherein, the cover includes a first inner surface parallel to the surface of the substrate and a second inner surface perpendicular to the surface of the substrate. The first inner surface and the second inner surface are connected to each other at a corner region of the cover through a third inner surface between the first inner surface and the second inner surface. The third inner surface of the cover has a curved surface with a first radius of curvature, and Wherein, the cover includes an edge heating zone, and when the edge heating zone is projected onto a plane including the support, the edge heating zone does not overlap with the support.

13. The apparatus according to claim 12, Wherein, The edge heating zone is adjacent to the curved surface.

14. The apparatus according to claim 13, Wherein, The cover includes a first portion including the first inner surface and extending parallel to the surface of the substrate and a second portion including the second inner surface and extending perpendicular to the surface of the substrate, and The edge heating zone is only located in the second portion of the cover.

15. The apparatus according to claim 12, Wherein, The oxide remover includes formic acid.

16. An apparatus for forming solder bumps on a substrate, the apparatus including a solderless reflow apparatus for reflowing the solder bumps, the apparatus comprises: A support configured to support the substrate; A housing surrounding the support; A cover combined with the housing to define a manufacturing space surrounding the support; And An oxide remover supply nozzle configured to supply an oxide remover to the manufacturing space, Wherein, the cover includes an edge heating zone along the periphery of the cover, and Wherein, when the edge heating zone is projected onto a plane including the support, the edge heating zone does not overlap with the support.

17. The apparatus according to claim 16, Wherein, The cover includes a first cover portion parallel to the surface of the substrate and a second cover portion perpendicular to the surface of the substrate, and The edge heating zone includes a first heating portion and a second heating portion. The first heating portion extends parallel to the surface of the substrate and is located in the first cover portion, and the second heating portion extends perpendicular to the surface of the substrate and is located in the second cover portion.

18. A method of forming solder bumps, the method comprises the following steps: Placing a substrate including solder bumps on a support in a reflow space defined by a housing and a cover; Applying energy to an edge heating zone provided along the periphery of the cover; Supplying an oxide remover to the substrate; And Heating the substrate to reflow the solder bumps, Wherein, when the edge heating zone is projected onto a plane including the support, the edge heating zone does not overlap with the support.

19. The method according to claim 18, Wherein, In the applying step of applying energy to the edge heating zone, the inner surface of the cover adjacent to the edge heating zone has a curved surface with a radius of curvature of 5 mm to 27 mm.

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