A power semiconductor module and an installation method thereof

Abstract

The present invention relates to the technical field of power semiconductor module manufacturing, and particularly relates to a power semiconductor module and an installation method thereof, including a housing and a metal-ceramic substrate. The housing and the metal-ceramic substrate are fixedly connected. The power semiconductor module further includes a housing connection and fixing portion, which includes a connection portion for fixedly connecting with the housing and a fixing portion for connecting with a radiator. When the module is fixed on the radiator, at this time, the bottom surface of the metal-ceramic substrate is in a suspended state and will not be subjected to any stress, eliminating the risk of stress being transmitted to the metal-ceramic substrate by improper installation methods and the risk of ceramic cracking.

Description

Technical Field

[0001] The present invention relates to the technical field of power semiconductor module manufacturing, and particularly relates to a power semiconductor module and an installation method thereof. Background Art

[0002] Currently, semiconductor power semiconductor modules without a metal baseplate are mainly used in solar cell string inverters, industrial drives, UPSs, and EV chargers. In particular, higher requirements are put forward for reducing the mass and volume of the module. Therefore, semiconductor modules without a metal baseplate are the current common packaging form.

[0003] Currently, the connection and fixing part is usually an integral structure with the module housing. Without the protection of a metal baseplate, when the module is installed and fixed on the radiator by screwing, improper installation methods often transfer stress to the metal-ceramic substrate, posing a risk of cracking the ceramic.

[0004] There are two previous installation methods. The first method is to customize a multi-head screwdriver to synchronously tighten the screws on both sides of the module. The second method is to first pre-tighten the screws on one side, and the other side of the module does not rise, then tighten the screws on the other side, and finally tighten the first screw. The problem with the first method is that an ordinary single-head screwdriver cannot complete the module installation, and a specially customized multi-head screwdriver is required, increasing the production cost of the client. The problem with the second method is that it is difficult to set the degree of pre-tightening in the first step, the installation is very unfriendly, and it is not suitable for automation. Summary of the Invention

[0005] In order to solve the problem that the existing integral semiconductor power semiconductor module is easily damaged during installation, the present invention provides a power semiconductor module that is not easily damaged during installation and an installation method thereof.

[0006] The technical solution adopted by the present invention to solve its technical problems is:

[0007] A power semiconductor module includes a housing and a metal-ceramic substrate. The housing and the metal-ceramic substrate are fixedly connected. The power semiconductor module further includes a housing connection and fixing part, and the housing connection and fixing part includes a connection part for fixedly connecting with the housing and a fixing part for connecting with the radiator.

[0008] Further, the connection part is snap-connected or tooth-connected with the housing.

[0009] Further, the housing is provided with a slit for inserting the connection part. The two sides of the connection part have inclined teeth, and the two sides of the slit have reverse teeth meshing with the inclined teeth.

[0010] Furthermore, each tooth of the helical tooth includes a bevel edge for insertion guidance and a locking edge for preventing the helical tooth from slipping out. The head of the connecting portion along the insertion direction is the insertion end. The bevel edge of each tooth is located on the side close to the insertion end, and the locking edge of each tooth is located on the side away from the insertion end. The angle between the locking edge and the insertion direction is greater than or equal to 90 degrees, ensuring that the connecting portion can only enter unidirectionally and cannot slip out.

[0011] Furthermore, a raised limiting portion is provided on the housing. The insertion end of the connecting portion has a first notch matching the shape of the limiting portion, and a through hole matching the shape of the limiting portion is provided near the insertion end of the connecting portion.

[0012] Furthermore, the metal-ceramic substrate is provided with chips and power terminals. The chips, the conductive copper foil of the metal-ceramic substrate, and the power terminals are electrically connected to each other through metal wires. The front surface of the housing is provided with a potting hole for injecting silicone gel, a through hole for the power terminals to pass through, and a hole portion for connecting the driving circuit board. The housing and the metal-ceramic substrate are bonded by silicone rubber, and silicone gel is provided on the metal-ceramic substrate.

[0013] Furthermore, a through hole for connecting a radiator is provided in the connecting portion of the housing connection fixing portion. The end of the connecting portion away from the housing is provided with a bent reinforcing portion, and a second notch is provided in the middle of the reinforcing portion.

[0014] An installation method of a power semiconductor module as described above includes the following steps:

[0015] S1: Insert the housing connection fixing portion into the slit of the housing. At this time, the first notch of the housing connection fixing portion is blocked by the hemispherical limiting portion on the housing and cannot continue to move upward. At this time, the relative positions of the first notch of the housing connection fixing portion and the hemispherical limiting portion on the housing can be observed to check the state before installation in front of the radiator.

[0016] S2: Fix the housing connection fixing portion to the radiator.

[0017] S3: Apply external forces to both sides of the housing simultaneously. When the housing is under the action of the external force, it undergoes relative displacement with the housing connection fixing portion until the bottom surface of the metal-ceramic substrate contacts the surface of the radiator. At this time, the through hole on the housing connection fixing portion will exactly nest the limiting portion on the housing.

[0018] Furthermore, in S3, the applied external force is 5 - 10 N.

[0019] Furthermore, before the housing connection fixing portion is inserted into the housing, highly heat-conductive silicone grease is applied in advance on the surface of the radiator.

[0020] Beneficial effects:

[0021] (1) A semiconductor power semiconductor module without a metal baseplate provided by the present invention separates the connection and fixing part originally injection-molded in the housing into a split structure. At the same time, it can be inserted through the slits on the corresponding opposite sides of the housing and engaged with each other through an anti-tooth structure, allowing only one-way entry and preventing slipping out, thus forming a stable structure.

[0022] (2) When the module is fixed to the radiator, the bottom surface of the metal-coated ceramic substrate is in a suspended state at this time and will not be subjected to any stress, eliminating the risk of stress being transmitted to the metal-coated ceramic substrate by improper installation methods and the risk of ceramic cracking. Then, pressure is applied to the module, and a buckle is formed by the through-hole at the upper end of the connection and fixing part and the hemispherical limiting part of the housing. At this time, the bottom surface of the metal-coated ceramic substrate closely adheres to the surface of the radiator. The contact area is large, and the pressure is greatly reduced, so that the maximum stress on the metal-coated ceramic substrate can be well controlled, thereby greatly reducing the risk of cracking of the metal-coated ceramic substrate.

[0023] (3) By observing the positions of the through-hole on the connection and fixing part of the housing and the hemispherical limiting part on the housing, it can be checked whether the module is installed in place. At the same time, the nested relationship between the two also provides further guarantee for the close fitting of the semiconductor power semiconductor module and the radiator. Brief Description of the Drawings

[0024] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0025] Figure 1 Structural schematic diagram of the semiconductor power semiconductor module of the present invention;

[0026] Figure 2a Top view of the housing;

[0027] Figure 2b For Figure 2a Cross-sectional view along A-A in

[0028] Figure 3a Front view of the connection and fixing part of the housing;

[0029] Figure 3b Top view of the connection and fixing part of the housing;

[0030] Figure 4 Side view showing the positional relationship between the semiconductor power semiconductor module and the radiator in the state where no external force is applied to the housing and the screws on both sides are tightened;

[0031] Figure 5It shows when Figure 4 in the state, a schematic diagram of the positional relationship between the housing and the housing connection and fixing part;

[0032] Figure 6 It represents a side view of the positional relationship between the semiconductor power semiconductor module and the radiator when an external force is applied to the housing.

[0033] Figure 7 It shows when Figure 6 in the state, a schematic diagram of the positional relationship between the housing and the housing connection and fixing part.

[0034] Among them, 1. Metal-clad ceramic substrate, 2. Chip, 3. Metal wire, 4. Power terminal, 5. Silicone gel, 6. Housing, 60. Front of the housing, 61. Hole part, 62. Limiting part, 63. Slit, 64. Glue filling hole, 65. Through hole, 66. Reverse tooth, 67. Opening, 7. Housing connection and fixing part, 70. Inclined tooth, 701. Hypotenuse, 702. Locking edge, 71. Reinforcing part, 72. Through hole, 73. Second notch, 74. First notch, 75. Through hole, 76. Fixing part, 77. Connecting part, 8. Screw, 9. Radiator, 10. Silicone rubber. Specific embodiments

[0035] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and in no way limits the present invention and its application or use. Based on the embodiments in the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present invention.

[0036] It should be noted that the terms used here are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used here, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0037] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by orientation words such as "front, back, top, bottom, left, right", "lateral, vertical, perpendicular, horizontal" and "top, bottom", etc. is usually based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description. Without contrary instructions, these orientation words do not indicate and imply that the device or component referred to must have a specific orientation or be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation on the protection scope of the present invention; the orientation words "inside, outside" refer to the inside and outside relative to the contour of each component itself.

[0038] In addition, it should be noted that the use of words such as "first", "second", etc. to limit the components is only for the convenience of distinguishing the corresponding components. Without additional statements, the above words have no special meaning. Therefore, it should not be construed as a limitation on the protection scope of the present invention.

[0039] A power semiconductor module includes a housing 6 and a metal-ceramic substrate 1. The housing 6 and the metal-ceramic substrate 1 are fixedly connected. The power semiconductor module further includes a housing connection and fixing part 7. The housing connection and fixing part 7 includes a connection part 77 for fixedly connecting with the housing 6 and a fixing part 76 for connecting a radiator 9.

[0040] The connection part 77 is connected to the housing 6 by snap connection or tooth connection.

[0041] The housing 6 is provided with a slit 63 for inserting the connection part 77. Both sides of the connection part 77 have inclined teeth 70, and both sides of the slit 63 have reverse teeth 66 meshing with the inclined teeth 70.

[0042] Each tooth of the inclined tooth 70 includes a bevel edge 701 for insertion guidance and a locking edge 702 for preventing the inclined tooth 70 from coming out. The head of the connection part 77 along the insertion direction is the insertion end. The bevel edge 701 of each tooth is located on the side close to the insertion end, and the locking edge 702 of each tooth is located on the side away from the insertion end. The angle a between the locking edge 702 and the insertion direction is greater than or equal to 90 degrees.

[0043] The housing 6 is provided with a protruding limiting part 62. The insertion end of the connection part 77 has a first notch 74 matching the shape of the limiting part 62, and a through hole 75 matching the shape of the limiting part 62 is provided near the insertion end of the connection part 77. The shape of the limiting part 62 can be set according to requirements. Preferably, the shape of the limiting part 62 is hemispherical, the shape of the first notch 74 is semi-circular, and the shape of the through hole 75 is circular. In this way, the limiting part 62 is set as hemispherical to facilitate guiding it into the through hole 75.

[0044] On the metal-ceramic substrate 1, there are a chip 2 and power terminals 4. The chip 2, the conductive copper foil of the metal-ceramic substrate 1, and the power terminals 4 are electrically connected to each other through metal wires 3. On the front surface 60 of the housing, there are a potting hole 64 for injecting silicone gel 5, a through hole 65 for the power terminals 4 to pass through, and a hole portion 61 for connecting to the drive circuit board. The housing 6 and the metal-ceramic substrate 1 are bonded by silicone rubber 10, and the silicone gel 5 is provided on the metal-ceramic substrate 1.

[0045] The connecting portion 77 of the housing connection fixing portion 7 is provided with a through hole 72 for connecting to the radiator 9. One end of the connecting portion 77 away from the housing 6 is provided with a bent reinforcing portion 71, and a second notch 73 is provided in the middle of the reinforcing portion 71.

[0046] An installation method of the above power semiconductor module includes the following steps:

[0047] S1: Insert the housing connection fixing portion 7 into the slit 63 of the housing 6. At this time, the first notch 74 of the housing connection fixing portion 7 is blocked by the hemispherical limiting portion 62 on the housing 6 and cannot continue to move upward. At this time, the relative positions of the first notch 74 of the housing connection fixing portion 7 and the hemispherical limiting portion 62 on the housing 6 can be observed to check the state before installation in front of the radiator 9; the insertion positions of the two side connecting portions 77 should be symmetrical;

[0048] S2: Fix the housing connection fixing portion 7 to the radiator 9;

[0049] S3: Apply external forces to both sides of the housing 6 simultaneously. When the housing 6 is under the action of the external force, it undergoes relative displacement with the housing connection fixing portion 7 until the bottom surface of the metal-ceramic substrate 1 contacts the surface of the radiator 9. At this time, the through hole 75 on the housing connection fixing portion 7 will just nest the hemispherical limiting portion 62 on the housing 6.

[0050] In S3, the applied external force is 5 - 10 N.

[0051] Before the housing connection fixing portion 7 is inserted into the housing 6, a thermal conductive silicone grease with high heat dissipation efficiency is applied in advance on the surface of the radiator 9.

[0052] The chip 2 is soldered to the conductive pattern surface of the metal-ceramic substrate 1 by reflow soldering or silver sintering; the power terminals are soldered or ultrasonically crimped to the conductive pattern surface of the metal-ceramic substrate 1 by reflow soldering; the chip, the conductive copper foil of the metal-ceramic substrate, and the power terminals are electrically connected to each other through the metal wires 3; the housing and the metal-ceramic substrate 1 are bonded by the sealing silicone rubber 10; the housing connection fixing portion 7 and the housing 6 form an engaging connection through the helical teeth 70 structure on its connecting portion and the reverse teeth 66 on the housing 6.

[0053] The power semiconductor module contains at least one semiconductor chip, which is soldered on the conductive copper foil of the metal-ceramic substrate 1. The semiconductor chip can be one of IGBT, FRED, MOS, or placed on the conductive copper foil of the metal-ceramic substrate 1 in the form of a combination of two or more.

[0054] The metal-ceramic substrate 1 contains two metal layers (e.g., Cu, Cu alloy) and one ceramic layer (e.g., Al2O3, SiN, Si3N4), where the two metal layers are located on both sides of the ceramic layer; the metal layer can be bare copper or the surface can be optionally coated with an antioxidant coating (e.g., nickel, palladium, gold). The metal-ceramic substrate 1 can be a direct bonded copper (DBC) ceramic substrate.

[0055] The metal wire 3 connects the chip 2 and the conductive copper foil of the metal-ceramic substrate 1 in the module. The power terminal 4 plays a role in transmitting electrical signals and energy, and the materials involved can usually be selected from Al, Cu, or Al-clad Cu.

[0056] The power terminal 4 connects the PCB drive board and the conductive copper foil of the metal-ceramic substrate 1 in the module, playing a role in transmitting electrical signals and energy. The whole is a metal structure, and the material is usually copper.

[0057] The housing 6 covers the circuit layer of the metal-ceramic substrate 1, the semiconductor chip 2 attached to its surface, and the metal wire 3, playing a protective role. The material is usually reinforced fiberglass.

[0058] As shown in Figure 2, the housing 6 generally presents a cube shape, with a narrow slit 63 running through from top to bottom on the corresponding opposite sides. The thickness of the narrow slit 63 is about 0.4 mm. There are at least two or more anti-tooth 66 structures at the joints on both sides of the narrow slit 63. The housing connection fixing part 7 can be inserted into the housing 6 through the narrow slit 63, and this structure meshes exactly with the helical tooth 70 structure on the housing connection fixing part 7 to form a stable connection. The outermost side of the narrow slit 63 is an opening 67 structure, and the housing 6 is generally made of plastic, so that the anti-teeth 66 on both sides of the narrow slit 63 can be deformed to allow the connection part 77 to be inserted, and a hemispherical limiting part 62 is provided at the central position of the housing 6 aligned with the opening 67. Preferably, the diameter of the hemispherical limiting part 62 is 1 mm.

[0059] The housing connection fixing part 7 connects the handle of the housing 6 to fix the semiconductor module on the radiator 9, and the material is usually stainless steel. The connecting housing 6 fixes the semiconductor module on the radiator 9, and the housing connection fixing part 7 needs to have a certain rigidity. Preferably, the material is stainless steel. On both sides of the connecting part 77, there are at least two or more helical tooth 70 structures respectively. At one end of the inserted housing 6, there is a semi-circular first notch 74, the diameter of which is slightly larger than the hemispherical limiting part 62 on the housing 6. At about 1.5 mm directly below the first notch 74, there is a through hole 75 with the same diameter. The fixing part 76 and the connecting part 77 are bent at 90°. One end of the fixing part 76 is connected to the housing 6, and the other end extends away from the housing 6. At the end of the fixing part 76 away from the housing 6, there is a through hole 75, preferably an oval hole or a circular hole. Then the through hole 75 is connected to the radiator 9 through a screw 8. The end point of the extension is bent in the direction parallel to the connecting part 77 to form a reinforcing part 71 to strengthen the structural strength of the fixing part. There is a square second notch 73 in the middle of the reinforcing part 71.

[0060] As Figure 2a and Figure 2b shown, the housing 6 generally presents a cubic shape. On the front surface 60 of the housing, there is a potting hole 64. Silicon gel 5 can be injected into the power semiconductor module through the potting hole 64 to protect the semiconductor chip 2, metal wire 3, etc. arranged on the graphic surface of the metal-ceramic substrate 1, playing a role in isolating water vapor. At the same time, on the front surface 60 of the housing, there are multiple through holes 65 arranged regularly and penetrating from the inside to the outside. The bottom of the power terminal 4 is welded on the graphic surface of the metal-ceramic substrate 1 and passes through the through hole 65 of the housing 6, and a part is exposed outside.

[0061] Four hole parts 61 are respectively arranged around the housing 6. When the drive circuit board is combined with the semiconductor module, the two can be firmly combined by inserting screws through the hole parts 61.

[0062] As Figure 4 shown, it is a side view of the positional relationship between the semiconductor power semiconductor module and the radiator 9 when no external force is applied to the housing 6 and the screws 8 on both sides are tightened. The screw 8 tightly fits the housing connection fixing part 7 and the radiator 9 together through the through hole 72 on the housing connection fixing part 7. At this time, when no external force is applied to the housing 6, the bottom surface of the metal-ceramic substrate 1 and the surface of the radiator 9 do not contact and there is a gap. Therefore, when the screw 8 is locked, the stress is directly transmitted to the radiator 9, and because the metal-ceramic substrate 1 is in a suspended state, it is hardly affected by any stress. Therefore, when the screw 8 is locked, there is no risk of the metal-ceramic substrate 1 being cracked.

[0063] As Figure 5As shown, the housing connection fixing portion 7 is inserted into the housing 6. At this time, the semicircular notch 74 of the housing connection fixing portion 7 is blocked by the hemispherical stopper 62 on the housing 6 and cannot continue to move upward. At this time, the relative positions of the semicircular notch 74 of the housing connection fixing portion 7 and the hemispherical stopper 62 on the housing 6 can be observed to check the state of installation in front of the radiator 9. In addition, since the helical teeth 70 structures on both sides of the housing connection fixing portion 7 and the reverse tooth structure 66 in the housing 6 form a meshing state, the housing 6 cannot move downward either.

[0064] like Figure 6 As shown, a side view of the positional relationship between the semiconductor power semiconductor module and the heat sink 9 when an external force is applied to the shell 6. If the semiconductor module has been locked on the heat sink 9 by screws 8, an external force is applied to both sides of the shell 6 at the same time, and the preferred external force is 5 to 10N. When the shell 6 is subjected to an external force, a relative displacement occurs with the shell connection fixing portion 7. At this time, the bottom surface of the metal-clad ceramic substrate 1 contacts the surface of the heat sink 9. Preferably, a high heat dissipation efficiency thermal grease can be applied to the surface of the heat sink 9 in advance. When the metal-clad ceramic substrate 1 moves downward, the thickness of the thermal grease will also be thinned and evenly pressed, thereby increasing the heat dissipation efficiency of the heat sink, thereby reducing the thermal resistance as much as possible.

[0065] When the bottom surface of the metal-clad ceramic substrate 1 begins to contact the surface of the heat sink 9, when the external force on the shell 6 is transmitted to the ground of the metal-clad ceramic substrate 1, the pressure is greatly reduced due to the large contact area between the bottom surface of the metal-clad ceramic substrate 1 and the heat sink 9. The maximum stress on the metal-clad ceramic substrate 1 can be well controlled, thereby greatly reducing the risk of fracturing of the metal-clad ceramic substrate 1.

[0066] like Figure 7 As shown, under the action of external force, the shell 6 moves downward relative to the shell connecting and fixing portion 7. At this time, the shell connecting and fixing portion 7 will form a force interaction with the hemispherical limiting portion 62 on the shell 6. When the external force on the shell 6 is greater than the interaction force between the two, the shell 6 will continue to move along the direction of the shell connecting and fixing portion 7 until the metal-clad ceramic substrate 1 contacts the heat sink 9, and the movement stops. At this time, continuing to apply stress to the shell 6 will not cause the shell 6 to move again. At this time, the through hole 75 on the shell connecting and fixing portion 7 will just nest the hemispherical limiting portion 62 on the shell 6.

[0067] Whether the module is installed in place can be checked by observing the position of the through hole 75 on the housing connection fixing part 7 and the hemispherical stopper 62 on the housing 6. At the same time, the nesting relationship between the two can also provide further guarantee for the close fit between the semiconductor power semiconductor module and the heat sink 9.

[0068] The above are only the preferred specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention, according to the technical solution and inventive concept of the present invention, making equivalent substitutions or changes should be covered within the protection scope of the present invention.

Claims

1. A power semiconductor module, characterized in that : It includes a housing (6) and a metal-ceramic substrate (1). The housing (6) and the metal-ceramic substrate (1) are fixedly connected. The power semiconductor module further includes a housing connection fixing part (7). The housing connection fixing part (7) includes a connection part (77) for fixedly connecting with the housing (6) and a fixing part (76) for connecting the radiator (9). The connection part (77) is connected to the housing (6) by teeth. The housing (6) is provided with a slit (63) for inserting the connection part (77). Both sides of the connection part (77) have inclined teeth (70), and both sides of the slit (63) have reverse teeth (66) meshing with the inclined teeth (70). Each tooth of the inclined tooth (70) includes a hypotenuse (701) for insertion guidance and a locking edge (702) for preventing the inclined tooth (70) from coming out. The head of the connection part (77) along the insertion direction is the insertion end. The hypotenuse (701) of each tooth is located on the side close to the insertion end, and the locking edge (702) of each tooth is located on the side away from the insertion end. The included angle between the locking edge (702) and the insertion direction is greater than or equal to 90 degrees. The housing (6) is provided with a protruding limiting part (62). The insertion end of the connection part (77) has a first notch (74) matching the shape of the limiting part (62), and a through hole (75) matching the shape of the limiting part (62) is provided near the insertion end of the connection part (77).

2. The power semiconductor module according to claim 1, characterized in that: The metal-ceramic substrate (1) has chips (2) and power terminals (4). The chips (2), the conductive copper foil of the metal-ceramic substrate (1), and the power terminals (4) are electrically connected to each other through metal wires (3). On the front surface (60) of the housing, there are a potting hole (64) for injecting silicone gel (5), a through hole (65) for the power terminal (4) to pass through, and a hole part (61) for connecting the drive circuit board. The housing (6) and the metal-ceramic substrate (1) are bonded by silicone rubber (10), and silicone gel (5) is provided on the metal-ceramic substrate (1).

3. The power semiconductor module according to claim 1, characterized in that: The connection part (77) of the housing connection fixing part (7) is provided with a through hole (72) for connecting the radiator (9). One end of the connection part (77) away from the housing (6) is provided with a bent reinforcing part (71), and a second notch (73) is provided in the middle of the reinforcing part (71).

4. An installation method for a power semiconductor module according to any one of claims 1 to 3, characterized in that: It includes the following steps: S1: Insert the housing connection fixing part (7) into the slit (63) of the housing (6). At this time, the first notch (74) of the housing connection fixing part (7) is blocked by the hemispherical limiting part (62) on the housing (6) and cannot continue to move upward. S2: Fix the housing connection fixing part (7) to the radiator (9). S3: Apply external forces to both sides of the housing (6) simultaneously. When the housing (6) is under the action of the external force, it undergoes relative displacement with the housing connection fixing part (7) until the bottom surface of the metal-ceramic substrate (1) contacts the surface of the radiator (9). At this time, the through hole (75) on the housing connection fixing part (7) will just nest the limiting part (62) on the housing (6).

5. The installation method for the power semiconductor module according to claim 4, characterized in that: In S3, the applied external force is 5 - 10 N.

6. The installation method for the power semiconductor module according to claim 4, characterized in that: Before the housing connection fixing part (7) is inserted into the housing (6), thermal grease is applied in advance on the surface of the radiator (9).

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