Light emitting device and display device including the same

Abstract

A light-emitting device may include: a substrate; at least one light-emitting element located on the substrate and emitting light; a first electrode and a second electrode spaced a predetermined distance apart from each other and with the light-emitting element between the first electrode and the second electrode; a color conversion layer located on the substrate and converting light emitted from the light-emitting element into light having a specific color; a first contact electrode electrically connecting the first electrode to a first end of the light-emitting element; and a second contact electrode electrically connecting the second electrode to a second end of the light-emitting element. In a plan view, the color conversion layer may be spaced a predetermined distance apart from the light-emitting element and overlap one of the first contact electrode and the second contact electrode.

Description

Technical Field

[0001] Various embodiments of the present disclosure relate to a light emitting device and a display device having the same. Background Art

[0002] Light emitting diodes (LEDs) may have relatively satisfactory durability even under adverse environmental conditions and may have excellent performance in terms of life span and brightness. Recently, research on technology for applying such LEDs to various display devices has become significantly more active.

[0003] In order to apply LEDs to lighting devices, display devices, etc., it is necessary to combine the LEDs with electrodes so that the voltage of a power source can be applied to the LEDs. Various studies have been conducted on the arrangement relationship between the LEDs and the electrodes with respect to the application purpose of the LEDs, methods of reducing the space required for the electrodes, or methods of manufacturing the LEDs.

[0004] In addition, various studies have been conducted to improve display quality by improving light output efficiency of LEDs in a display device using the LEDs as a light source. Summary of the invention

[0005] Technical issues

[0006] Various embodiments of the present disclosure relate to a light emitting device in which light emitting efficiency of an ultra-small light emitting diode can be enhanced, and a display device having the same.

[0007] Technical Solution

[0008] According to aspects of the present disclosure, a light-emitting device may include: a substrate; at least one light-emitting element located on the substrate and configured to emit light; a first electrode and a second electrode, which are separated from each other by a predetermined distance and the light-emitting element is placed between the first electrode and the second electrode; a color conversion layer, which is located on the substrate and configured to convert light emitted from the light-emitting element into light having a specific color; a first contact electrode, which is configured to electrically couple the first electrode to a first end of the light-emitting element; and a second contact electrode, which is configured to electrically couple the second electrode to a second end of the light-emitting element. In a plan view, the color conversion layer may be separated from the light-emitting element by a predetermined distance and overlap with either the first contact electrode or the second contact electrode.

[0009] In an embodiment, the color conversion layer may include quantum dots.The color conversion layer may overlap the second contact electrode.

[0010] In an embodiment, the color conversion layer may be located on the second electrode and may overlap the second electrode.The second contact electrode may be located on the color conversion layer.

[0011] In an embodiment, a color conversion layer may be located on the second contact electrode.

[0012] In an embodiment, the light emitting device may further include: a first connecting line extending in one direction and electrically coupled to the first electrode; and a second connecting line extending parallel to the direction in which the first connecting line extends and electrically coupled to the second electrode. The second electrode may include a 2-1 electrode and a 2-2 electrode branched from the second connecting line and spaced a predetermined distance apart from each other. The color conversion layer may be located on the substrate between the 2-1 electrode and the 2-2 electrode.

[0013] In an embodiment, the light emitting device may further include a dummy electrode between the substrate and the color conversion layer.

[0014] In an embodiment, the light emitting device may further include: a cover insulating layer located on the color conversion layer; and a light blocking pattern located on the cover insulating layer, the light blocking pattern corresponding to the light emitting element. The light blocking pattern may include a black matrix, and the cover insulating layer may include an inorganic insulating layer.

[0015] In an embodiment, the light emitting device may further include an auxiliary pattern located between the cover insulating layer and the light blocking pattern and disposed to correspond to the light emitting element.

[0016] In an embodiment, the light emitting device may further include: a first insulating layer disposed between the substrate and the light emitting element; a second insulating layer disposed on the light emitting element and exposing opposite ends of the light emitting element; and a third insulating layer disposed on the second insulating layer and covering the light emitting element.

[0017] In an embodiment, the first contact electrode and the second contact electrode may be located on the third insulating layer and spaced apart from each other by a predetermined distance.

[0018] In an embodiment, the first contact electrode and the second contact electrode may be located at different layers.

[0019] In an embodiment, the light emitting element may include a light emitting diode having a cylindrical or polygonal cylindrical shape and having a size of a micrometer scale or a nanometer scale.

[0020] According to aspects of the present disclosure, a display device may include: a substrate including a display area and a non-display area; and a plurality of pixels arranged in the display area of ​​the substrate, each of the plurality of pixels including a plurality of sub-pixels. Each of the plurality of sub-pixels may include: a pixel circuit layer including at least one transistor; and a display element layer including a unit emission area through which light is emitted.

[0021] The display element layer may include: at least one light-emitting element, which is arranged on the pixel circuit layer and is configured to emit light; a first electrode and a second electrode, which are separated from each other by a predetermined distance and the light-emitting element is placed between the first electrode and the second electrode; a color conversion layer, which is located on the substrate and is configured to convert light emitted from the light-emitting element into light having a specific color; a first contact electrode, which is configured to electrically couple the first electrode to a first end of the light-emitting element; and a second contact electrode, which is configured to electrically couple the second electrode to a second end of the light-emitting element.

[0022] In an embodiment, the color conversion layer may be spaced apart from the light emitting element by a predetermined distance in a plan view, and may overlap with any one of the first contact electrode and the second contact electrode.

[0023] Beneficial Effects

[0024] The embodiments of the present disclosure can provide a light emitting device in which a color conversion layer is provided on the same substrate as that of a nano-small light emitting element, so that the light output efficiency of the light emitting element can be enhanced.

[0025] An embodiment of the present disclosure may provide a display device including the light emitting device. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1a and Figure 1b is a perspective view illustrating various types of light emitting elements according to one or more example embodiments of the present disclosure.

[0027] Figure 2 It is shown that Figure 1a A plan view of a unit emission area of ​​a light emitting device of a light emitting element.

[0028] Figure 3a is along Figure 2 A cross-sectional view taken along line II'.

[0029] Figure 3b and Figure 3c A light emitting device according to an embodiment of the present disclosure is shown and corresponds to Figure 2 Cross-sectional view along line II'.

[0030] Figure 4 is a plan view showing a unit emission area of ​​a light emitting device according to an embodiment of the present disclosure.

[0031] Figure 5 is along Figure 4 A cross-sectional view taken along line II-II'.

[0032] Figure 6 is a plan view showing a unit emission area of ​​a light emitting device according to an embodiment of the present disclosure.

[0033] Figure 7 is along Figure 6 A cross-sectional view taken along line III-III'.

[0034] Figure 8 is a plan view showing a unit emission area of ​​a light emitting device according to an embodiment of the present disclosure.

[0035] Fig. 9 is along Figure 8 A cross-sectional view taken along line IV-IV'.

[0036] Fig.10 is a plan view showing a unit emission area of ​​a light emitting device according to an embodiment of the present disclosure.

[0037] Fig.11 is along Fig.10 A cross-sectional view taken along line V-V'.

[0038] Fig.12 The present invention shows a display device according to an embodiment of the present invention, and in particular, shows a display device using Figure 1a Schematic plan view of a display device in which the light-emitting element shown in FIG. 1 is used as a light source.

[0039] Figures 13a to 13c is a diagram showing various embodiments Fig.12 A circuit diagram of an example of a unit emission region of a display device.

[0040] Fig.14 It is schematically shown that the Fig.12 1 is a plan view of first to third sub-pixels in one of the pixels shown in .

[0041] Fig.15a is along Fig.14 A cross-sectional view taken along line VI-VI'.

[0042] Fig.15b and Fig.15c A display device according to an embodiment of the present disclosure is shown and corresponds to Fig.14 Cross-sectional view along line VI-VI'.

[0043] Figures 16a to 16h The manufacturing sequence is shown in Fig.15a A cross-sectional view of a method of displaying a device.

[0044] Fig.17 A display device according to an embodiment of the present disclosure is shown and corresponds to Fig.14 Cross-sectional view along line VI-VI'.

[0045] Fig.18A display device according to an embodiment of the present disclosure is shown and corresponds to Fig.14 Cross-sectional view along line VI-VI'. DETAILED DESCRIPTION

[0046] Since the present disclosure allows various changes and many embodiments, specific embodiments will be described in detail in the drawings and in the written description. However, this is not intended to limit the present disclosure to a specific mode of practice, and it will be understood that all changes, equivalents and substitutions that do not depart from the spirit and technical scope of the present disclosure are included in the present disclosure.

[0047] Throughout the disclosure, throughout the various figures and embodiments of the present disclosure, the same reference numerals refer to the same parts. For clarity of explanation, the size of the elements in the drawings may be exaggerated. It will be understood that, although the terms "first", "second", etc. may be used here to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, without departing from the teachings of the present disclosure, the first element discussed below may be named as the second element. Similarly, the second element may also be named as the first element. In the present disclosure, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form.

[0048] It will also be understood that when the terms "comprise", "include", "have", etc. are used in this specification, it indicates the presence of the stated features, wholes, steps, operations, elements, components and / or combinations thereof, but does not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components and / or combinations thereof. In addition, when a first component such as a layer, film, region or plate is disposed on a second component, the first component may not only be directly on the second component, but a third component may be placed between them. In addition, when it is stated that a first component such as a layer, film, region or plate is formed on a second component, the surface of the second component on which the first component is formed is not limited to the upper surface of the second component, but may include other surfaces such as the side surface or lower surface of the second component. In contrast, when a first component such as a layer, film, region or plate is below a second component, the first component may not only be directly below the second component, but a third component may be placed between them.

[0049] Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0050] Figure 1a and Figure 1b 1 is a perspective view showing various types of light emitting elements according to an embodiment of the present disclosure. Figure 1a and Figure 1b A cylindrical light emitting element is shown, but the present disclosure is not limited thereto.

[0051] Reference Figure 1a and Figure 1b The light emitting element LD according to an embodiment of the present disclosure may include a first semiconductor layer (or a first conductive semiconductor layer) 11, a second semiconductor layer (or a second conductive semiconductor layer) 13, and an active layer 12 disposed between the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13.

[0052] For example, the light emitting element LD may be implemented as a stacked body formed by sequentially stacking a first conductive semiconductor layer 11 , an active layer 12 , and a second conductive semiconductor layer 13 .

[0053] In an embodiment of the present disclosure, the light emitting element LD may be provided in the form of a rod extending in one direction. If the direction along which the light emitting element LD extends is defined as a longitudinal direction, the light emitting element LD may have a first end and a second end in the extending direction.

[0054] One of the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13 may be disposed on the first end, and the other of the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13 may be disposed on the second end.

[0055] Although the light emitting element LD can be provided in the form of a cylinder, the present disclosure is not limited thereto. The light emitting element LD may include a rod-like shape or a strip-like shape extending in the longitudinal direction (i.e., having an aspect ratio greater than 1). For example, the length L of the light emitting element LD in the longitudinal direction may be greater than its diameter.

[0056] The light emitting element LD may include a light emitting diode manufactured in an ultra-small size having a diameter and / or a length corresponding to, for example, a micrometer-scale or nanometer-scale size.

[0057] However, the size of the light emitting element LD is not limited thereto, and the size of the light emitting element LD may be changed to meet requirements of a lighting device or a self-emitting display device to which the light emitting element LD is applied.

[0058] The first conductive semiconductor layer 11 may include, for example, at least one n-type semiconductor layer. For example, the first conductive semiconductor layer 11 may include a semiconductor layer including any semiconductor material among InAlGaN, GaN, AlGaN, InGaN, AlN, and InN, and doped with a first conductive dopant such as Si, Ge, or Sn.

[0059] The material forming the first conductive semiconductor layer 11 is not limited thereto, and the first conductive semiconductor layer 11 may be formed of various other materials.

[0060] The active layer 12 may be formed on the first conductive semiconductor layer 11 and have a single quantum well or a multi-quantum well structure. In an embodiment of the present disclosure, a cladding layer (not shown) doped with a conductive dopant may be formed on and / or below the active layer 12. For example, the cladding layer may be formed of an AlGaN layer or an InAlGaN layer. In addition, the active layer 12 may be formed using a material such as AlGaN or AlInGaN.

[0061] If an electric field of a predetermined voltage or more is applied to opposite ends of the light emitting element LD, the light emitting element LD emits light by the combination of electron-hole pairs in the active layer 12 .

[0062] The second conductive semiconductor layer 13 may be disposed on the active layer 12 and may include a semiconductor layer having a different type from that of the first conductive semiconductor layer 11. For example, the second conductive semiconductor layer 13 may include at least one p-type semiconductor layer. For example, the second conductive semiconductor layer 13 may include a semiconductor layer including any one semiconductor material among InAlGaN, GaN, AlGaN, InGaN, AlN, and InN, and doped with a second conductive dopant such as Mg.

[0063] The material forming the second conductive semiconductor layer 13 is not limited thereto, and the second conductive semiconductor layer 13 may be formed of various other materials.

[0064] In the embodiments of the present disclosure, Figure 1a As shown in FIG. 1 , in addition to the first conductive semiconductor layer 11, the active layer 12 and the second conductive semiconductor layer 13, the light emitting element LD may further include an electrode layer 15 disposed on the second conductive semiconductor layer 13. Figure 1b As shown in FIG. 1 , the light emitting element LD may further include another electrode layer 16 disposed on one end of the first conductive semiconductor layer 11 in addition to the electrode layer 15 .

[0065] Although each of the electrode layers 15 and 16 may be formed by an ohmic contact electrode, the present disclosure is not limited thereto. In addition, each of the electrode layers 15 and 16 may include a metal or a metal oxide. For example, chromium (Cr), titanium (Ti), aluminum (Al), gold (Au), nickel (Ni), ITO, and oxides or alloys thereof may be used alone or in combination with each other. However, the present disclosure is not limited thereto.

[0066] Materials included in the respective electrode layers 15 and 16 may be the same as or different from each other.

[0067] The electrode layers 15 and 16 may be transparent or translucent. Therefore, light generated from the light emitting element LD may pass through the electrode layers 15 and 16 and then be emitted to the outside of the light emitting element LD.

[0068] In the embodiment of the present disclosure, the light emitting element LD may further include an insulating film 14. In the embodiment of the present disclosure, the insulating film 14 may be omitted or may be provided to cover only some of the first conductive semiconductor layer 11, the active layer 12, and the second conductive semiconductor layer 13.

[0069] like Figure 1a As shown in , the insulating film 14 may be provided on a portion of the light emitting element LD except for one of the opposite ends of the light emitting element LD. In this case, the insulating film 14 may expose only one electrode layer 15 provided on one end of the second conductive semiconductor layer 13 of the light emitting element LD, and surround the entire side surface of the component except the electrode layer 15. Here, the insulating film 14 may allow at least the opposite end of the light emitting element LD to be exposed to the outside. For example, the insulating film 14 may allow not only the electrode layer 15 provided on one end of the second conductive semiconductor layer 13 to be exposed to the outside, but also one end of the first conductive semiconductor layer 11 to be exposed to the outside.

[0070] In an embodiment, Figure 1b As shown in FIG. 1 , in the case where the electrode layers 15 and 16 are provided on respective opposite ends of the light emitting element LD, the insulating film 14 may allow at least a portion of each of the electrode layers 15 and 16 to be exposed to the outside. Alternatively, in an embodiment, the insulating film 14 may not be provided.

[0071] In an embodiment of the present disclosure, the insulating film 14 may include a transparent insulating material. For example, the insulating film 14 may include a transparent insulating material made of SiO 2 、Si 3 N 4 、Al 2 O 3 and TiO 2 At least one insulating material selected from the group consisting of, but not limited to. In other words, various materials with insulating properties can be used.

[0072] If the insulating film 14 is provided on the light emitting element LD, the active layer 12 can be prevented from being short-circuited with the first electrode and / or the second electrode not shown.

[0073] In addition, due to the insulating film 14, the occurrence of defects on the surface of the light emitting element LD can be minimized, thereby improving the life and efficiency of the light emitting element LD. When a plurality of light emitting elements LD are arranged in close contact with each other, the insulating film 14 can prevent an undesirable short circuit from occurring between the light emitting elements LD.

[0074] The light emitting element LD may be used as a light source for various display devices. The light emitting element LD may be manufactured through a surface treatment process.

[0075] Figure 2 It is shown that Figure 1a A plan view of a unit emission area of ​​a light emitting device of a light emitting element. Figure 3a is along Figure 2 A cross-sectional view taken along line II'.

[0076] Although for convenience, Figure 2 It is shown that the plurality of light emitting elements are aligned in the horizontal direction, but the alignment of the light emitting elements is not limited thereto.

[0077] exist Figure 2 In the present invention, the unit emission region may be a pixel region of one sub-pixel included in the light emitting device.

[0078] Reference Figure 1a , Figure 2 and Figure 3a , the light emitting device according to the embodiment of the present disclosure may include a substrate SUB and a plurality of light emitting elements LD disposed on the substrate SUB, on which at least one sub-pixel SP having a unit emission region 100 is disposed.

[0079] The substrate SUB may include an insulating material such as glass, an organic polymer, or a crystal. In addition, the substrate SUB may be made of a material having flexibility to be bendable or foldable, and have a single-layer or multi-layer structure.

[0080] For example, the substrate SUB may include at least one of the following materials: polystyrene, polyvinyl alcohol, polymethyl methacrylate, polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, cellulose triacetate, and cellulose acetate propionate. However, the material of the substrate SUB may be changed in various ways.

[0081] A blocking layer BRL for preventing impurities from diffusing into the light emitting element LD may be disposed on the substrate SUB.

[0082] In the embodiment of the present disclosure, each of the light emitting elements LD may be formed of a light emitting diode which is made of a material having an inorganic crystal structure and has an ultra-small size corresponding to, for example, a nanometer level or a micrometer level.

[0083] Each of the light emitting elements LD may include a first conductive semiconductor layer 11, a second conductive semiconductor layer 13, and an active layer 12 disposed between the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13. In some embodiments, each of the light emitting elements LD may further include an electrode layer 15 disposed on one side of the second conductive semiconductor layer 13.

[0084] Each of the light emitting elements LD may include a first end EP1 and a second end EP2. One of the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13 may be disposed on the first end EP1, and the other of the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13 may be disposed on the second end EP2.

[0085] A second insulating layer INS2 for covering a portion of an upper surface of each of the light emitting elements LD may be disposed on the light emitting element LD. Thus, opposite ends EP1 and EP2 of each light emitting element LD may be exposed to the outside.

[0086] The first insulating layer INS1 may be disposed between each of the light emitting elements LD and the substrate SUB. The first insulating layer INS1 may fill in the space between the substrate SUB and each of the light emitting elements LD to stably support the light emitting element LD and prevent the light emitting element LD from being removed from the substrate SUB. The first insulating layer INS1 may be formed of an inorganic insulating layer including an inorganic material or an organic insulating layer including an organic material.

[0087] First and second connection lines CNL1 and CNL2 , first and second electrodes REL1 and REL2 , and first and second contact electrodes CNE1 and CNE2 may be formed and / or disposed in the unit emission region 100 of the sub-pixel SP.

[0088] The first connection line CNL1 may extend from the sub-pixel SP in the first direction DR1. The first connection line CNL1 may be disposed only in the sub-pixel SP so that the sub-pixel SP may be electrically separated from the sub-pixels adjacent thereto. Therefore, the sub-pixel SP may be driven independently of the sub-pixels adjacent thereto.

[0089] The second connection line CNL2 may extend in a direction parallel to the direction in which the first connection line CNL1 extends. The second connection line CNL2 may extend not only to the subpixel SP but also to the subpixel adjacent to the subpixel SP. Therefore, the subpixel SP and the subpixel adjacent thereto may be commonly coupled to the second connection line CNL2.

[0090] The first electrode REL1 may include a 1-1 electrode REL1_1 and a 1-2 electrode REL1_2, which are branched from the first connection line CNL1 in a second direction DR2 intersecting the first direction DR1. The 1-1 electrode REL1_1, the 1-2 electrode REL1_2, and the first connection line CNL1 may be integrally provided and electrically and / or physically coupled to each other. Each of the 1-1 electrode REL1_1 and the 1-2 electrode REL1_2 may have a bar shape extending in the second direction DR2 in a plan view.

[0091] The second electrode REL2 may be disposed between the 1-1 electrode REL1_1 and the 1-2 electrode REL1_2 in a plan view and may be spaced apart from each of the 1-1 electrode REL1_1 and the 1-2 electrode REL1_2 by a predetermined distance. The 1-1 electrode REL1_1, the 1-2 electrode REL1_2, and the second electrode REL2 may be alternately disposed on the substrate SUB.

[0092] Before the light emitting element LD is aligned in the subpixel SP, a first alignment voltage may be applied to the first electrode REL1 through the first connection line CNL1 and a second alignment voltage may be applied to the second electrode REL2 through the second connection line CNL2. The first and second alignment voltages may have different voltage levels.

[0093] As predetermined alignment voltages having different voltage levels are applied to the first and second electrodes REL1 and REL2, respectively, an electric field may be formed between the first and second electrodes REL1 and REL2. The light emitting element LD may be aligned between the first and second electrodes REL1 and REL2 on the substrate SUB by the electric field.

[0094] The first electrode REL1 and the second electrode REL2 may be disposed on the substrate SUB at positions spaced apart from each other with the light emitting element LD interposed therebetween.

[0095] In an embodiment of the present disclosure, the first electrode REL1 may be disposed adjacent to one of the opposite ends EP1 and EP2 of each of the light emitting elements LD, and may be electrically coupled to the light emitting element LD through the first contact electrode CNE1. The second electrode REL2 may be disposed adjacent to the other of the opposite ends EP1 and EP2 of each of the light emitting elements LD, and may be electrically coupled to the light emitting element LD through the second contact electrode CNE2.

[0096] The first electrode REL1 and the second electrode REL2 may be disposed at the same plane and may have the same height. If the first electrode REL1 and the second electrode REL2 have the same height, each of the light emitting elements LD may be more reliably coupled to the first electrode REL1 and the second electrode REL2.

[0097] The first electrode REL1 and the second electrode REL2 may be formed of a conductive material. The conductive material may include a metal (such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr) or an alloy thereof, a conductive oxide (such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO) or indium tin zinc oxide (ITZO)) and a conductive polymer (such as PEDOT).

[0098] Each of the first electrode REL1 and the second electrode REL2 may have a single-layer structure, but the present disclosure is not limited thereto, and for example, may have a multi-layer structure formed by stacking two or more materials of metal, alloy, conductive oxide, and conductive polymer.

[0099] The materials of the first electrode REL1 and the second electrode REL2 are not limited to the above materials. For example, the first electrode REL1 and the second electrode REL2 can be made of a conductive material having a predetermined reflectivity to allow light emitted from the opposite ends EP1 and EP2 of the light emitting element LD to travel in a direction in which an image is displayed (e.g., in a forward direction).

[0100] In an embodiment of the present disclosure, the first electrode REL1 and the second electrode REL2 may be used as a driving electrode for driving each light emitting element LD after the light emitting element LD has been aligned in the sub-pixel SP. The first electrode REL1 and the second electrode REL2 may be used as a reflective electrode for reflecting light emitted from each of the light emitting elements LD in a forward direction.

[0101] Although the first and second electrodes REL1 and REL2 are shown as being disposed directly on the substrate SUB for illustration, the present disclosure is not limited thereto. For example, a component for enabling the display device to be driven as a passive matrix or an active matrix may be further disposed between the substrate SUB and the first and second electrodes REL1 and REL2.

[0102] In the case where the light emitting device is driven as an active matrix, for example, a signal line, an insulating layer, and / or a transistor may be provided between the substrate SUB and the first and second electrodes REL1 and REL2.

[0103] The signal line may include a scan line, a data line, a power line, etc. The transistor may be coupled to the signal line and may include a gate electrode, a semiconductor layer, a source electrode, and a drain electrode.

[0104] Any one of the first electrode REL1 and the second electrode REL2 may be an anode electrode, and the other may be a cathode electrode. In some embodiments of the present disclosure, the first electrode REL1 may be an anode electrode, and the second electrode REL2 may be a cathode electrode.

[0105] In this case, one of the source electrode and the drain electrode of the transistor can be coupled to any one of the first electrode REL1 and the second electrode REL2. The data signal of the data line can be applied to the any one of the electrodes through the transistor. Here, the number and shape of the signal line, the insulating layer and / or the transistor can be changed in various ways.

[0106] In an embodiment of the present disclosure, the first electrode REL1 may be electrically coupled to the transistor through a contact hole (not shown). Therefore, a signal provided to the transistor may be applied to the first electrode REL1.

[0107] In addition, in the case where the light emitting device is driven as an active matrix, the second electrode REL2 may be electrically coupled to a signal line through a contact hole (not shown). Therefore, a voltage of the signal line may be applied to the second electrode REL2.

[0108] In an embodiment of the present disclosure, the light emitting element LD may be divided into a plurality of first light emitting elements LD1 aligned between the 1-1 electrode REL1_1 and the second electrode REL2 and a plurality of second light emitting elements LD2 aligned between the second electrode REL2 and the 1-2 electrode REL1_2 .

[0109] The first end EP1 of each of the first light emitting elements LD1 may be electrically coupled to the 1-1 electrode REL1_1 through the first contact electrode CNE1. Therefore, the signal of the transistor may be transmitted to the first end EP1 of each of the first light emitting elements LD1. The second end EP2 of each of the first light emitting elements LD1 may be electrically coupled to the second electrode REL2 through the second contact electrode CNE2. Therefore, the voltage of the signal line may be transmitted to the second end EP2 of each of the first light emitting elements LD1.

[0110] The first end EP1 of each of the second light emitting elements LD2 may be electrically coupled to the second electrode REL2 through the second contact electrode CNE2. Therefore, the voltage of the signal line may be transmitted to the first end EP1 of each of the second light emitting elements LD2. The second end EP2 of each of the second light emitting elements LD2 may be electrically coupled to the 1-2 electrode REL1_2 through the first contact electrode CNE1. Therefore, the signal of the transistor may be transmitted to the second end EP2 of each of the second light emitting elements LD2.

[0111] For example, if a driving current flows through the subpixel SP during each frame period, the light emitting element LD coupled to the first electrode REL1 and the second electrode REL2 of the subpixel SP may emit light having a brightness corresponding to the driving current.

[0112] The first contact electrode CNE1 may be disposed on the first electrode REL1 to electrically and / or physically couple the first electrode REL1 with one of the opposite ends EP1 and EP2 of each of the light emitting elements LD.

[0113] The first contact electrode CNE1 may be formed of a transparent conductive material to allow light emitted from each of the light emitting elements LD and reflected by the first electrode REL1 to travel in a forward direction without loss. For example, the transparent conductive material may include ITO, IZO, ITZO, etc. The material of the first contact electrode CNE1 is not limited to the above materials.

[0114] The first contact electrode CNE1 may cover and overlap the first electrode REL1 in a plan view. In addition, the first contact electrode CNE1 may partially overlap one of the opposite ends EP1 and EP2 of each of the light emitting elements LD.

[0115] In an embodiment of the present disclosure, the first contact electrode CNE1 may include a 1-1th contact electrode CNE1_1 disposed on the 1-1th electrode REL1_1 and a 1-2th contact electrode CNE1_2 disposed on the 1-2th electrode REL1_2 .

[0116] The 1-1th contact electrode CNE1_1 may overlap the first end EP1 of each of the first light emitting elements LD1 and the 1-1th electrode REL1_1 in a plan view. The 1-2th contact electrode CNE1_2 may overlap the second end EP2 of each of the second light emitting elements LD2 and the 1-2th electrode REL1_2 in a plan view.

[0117] The second contact electrode CNE2 may be disposed on the second electrode REL2. In a plan view, the second contact electrode CNE2 may cover and overlap the second electrode REL2. In addition, the second contact electrode CNE2 may overlap the second end EP2 of each of the first light emitting elements LD1 and the first end EP1 of each of the second light emitting elements LD2.

[0118] The second contact electrode CNE2 may be made of the same material as that of the first contact electrode CNE1 , but the present disclosure is not limited thereto.

[0119] The first contact electrode CNE1 and the second contact electrode CNE2 may be disposed at the same plane and may be disposed on the third insulating layer INS3 and spaced apart from each other by a predetermined distance, so that the first contact electrode CNE1 and the second contact electrode CNE2 can be electrically separated from each other. In an embodiment of the present disclosure, the first contact electrode CNE1 may overlap one side surface of the third insulating layer INS3, and the second contact electrode CNE2 may overlap the other side surface of the third insulating layer INS3.

[0120] The third insulating layer INS3 may be disposed on the second insulating layer INS2 and may cover an exposed portion of an upper surface of each of the light emitting elements LD, thereby playing a role in flattening a step portion between the second insulating layer INS2 and the light emitting element LD. Although the third insulating layer INS3 may include an organic insulating layer formed of an organic material, the present disclosure is not limited thereto. In an embodiment, the third insulating layer INS3 may include an inorganic insulating layer formed of an inorganic material.

[0121] The fourth insulating layer INS4 may be disposed on the substrate SUB including the first contact electrode CNE1 and the second contact electrode CNE2. The fourth insulating layer INS4 may prevent the first contact electrode CNE1 and the second contact electrode CNE2 from being exposed to the outside, thereby preventing the first contact electrode CNE1 and the second contact electrode CNE2 from being corroded. Figure 3a , but the present disclosure is not limited thereto. In an embodiment, the fourth insulating layer INS4 may be formed of a plurality of layers.

[0122] An overcoat layer OC may be disposed on the fourth insulating layer INS4.

[0123] The overcoat layer OC may be a planarization layer for reducing a step difference formed by the first and second electrodes REL1 and REL2, the first and second contact electrodes CNE1 and CNE2, etc. disposed under the overcoat layer OC. In addition, the overcoat layer OC may be an encapsulation layer for preventing oxygen or water from penetrating into the light emitting element LD.

[0124] In some embodiments, the overcoat layer OC may be omitted. In the case where the overcoat layer OC is omitted, the fourth insulating layer INS4 may function as an encapsulation layer for preventing oxygen or water from penetrating into the light emitting element LD.

[0125] As described above, a predetermined voltage may be applied to opposite ends EP1 and EP2 of each first light emitting element LD1 through the 1-1th electrode REL1_1 and the second electrode REL2, respectively. Therefore, each first light emitting element LD1 may emit light through the combination of electron-hole pairs in the active layer 12 of each first light emitting element LD1.

[0126] In addition, a predetermined voltage may be applied to opposite ends EP1 and EP2 of each of the second light emitting elements LD2 through the second electrode REL2 and the 1-2 electrode REL1_2, respectively. Therefore, each second light emitting element LD2 may emit light by combining electron-hole pairs in the active layer 12 of each second light emitting element LD2.

[0127] The color conversion layer CCL may be disposed in the unit emission region 100 of the sub-pixel SP.

[0128] The color conversion layer CCL may convert the light emitted from each light emitting element LD into light having a specific color and then emit the light. For example, if the light emitting element LD emits blue light, the color conversion layer CCL may convert the blue light into light having a specific color according to the corresponding sub-pixel.

[0129] To this end, the color conversion layer CCL may be constructed in a form in which at least one type of light conversion particles are distributed in a transparent resin. In an embodiment of the present disclosure, the light conversion particles may be quantum dots QD.

[0130] For example, when the subpixel SP is a red subpixel and the light emitting element LD disposed in the subpixel SP is a light emitting element configured to emit light having a color other than red (eg, blue light), the color conversion layer CCL may include red quantum dots QD as light conversion particles.

[0131] If blue light is introduced into the color conversion layer CCL including red quantum dots QD, the color conversion layer CCL may absorb the blue light, shift the wavelength of the light through energy transition, and emit red light having a wavelength ranging from about 620 nm to about 680 nm.

[0132] In addition, when the subpixel SP is a green subpixel and the light emitting element LD disposed in the subpixel SP is a light emitting element configured to emit light having a color other than green (eg, blue light), the color conversion layer CCL may include green quantum dots QD as light conversion particles.

[0133] If blue light is introduced into the color conversion layer CCL including green quantum dots QD, the color conversion layer CCL may absorb the blue light, shift the wavelength of the light through energy transition, and emit green light having a wavelength ranging from about 500 nm to about 560 nm.

[0134] The red quantum dots QD and the green quantum dots QD may be selected from group II-VI compounds, group III-V compounds, group IV-VI compounds, group IV elements, group IV compounds, and combinations thereof.

[0135] The II-VI compound may be selected from the group consisting of: a binary compound selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof; a binary compound selected from the group consisting of CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnT e, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof; and a ternary compound selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof. The III-V compounds can be selected from the group consisting of: binary compounds selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof; ternary compounds selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb and mixtures thereof; and quaternary compounds selected from the group consisting of GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and mixtures thereof. The IV-VI compound may be selected from the group consisting of: a binary compound selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof; a ternary compound selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof; and a quaternary compound selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof. The IV group element may be selected from the group consisting of Si, Ge and mixtures thereof. The IV group compound may be a binary compound selected from the group consisting of SiC, SiGe and mixtures thereof.

[0136] The binary compound, ternary compound or quaternary compound may be present in the particle at a substantially uniform concentration, or may be present in the same particle at a locally different concentration distribution. In addition, both the red quantum dot QD and the green quantum dot QD may have a core / shell structure in which one quantum dot is surrounded by other quantum dots. The interface between the core and the shell may have a concentration gradient in which the concentration of the element present in the shell decreases along the direction from the surface of the particle to the center of the particle.

[0137] The red quantum dots QD and green quantum dots QD may have any shape commonly used in the art, and are not particularly limited. Specifically, spherical, pyramidal, multi-armed or cubic nanoparticles, nanotubes, nanowires, nanofibers and nanosheet particles may be used.

[0138] For convenience, a case where the subpixel SP is a red subpixel, the color conversion layer CCL includes red quantum dots QD, and the first and second light emitting elements LD1 and LD2 disposed in the subpixel SP emit blue light will be described as a representative example.

[0139] The color conversion layer CCL may be disposed on the substrate SUB between the first light emitting element LD1 and the second light emitting element LD2 in the unit emission region 100 of the sub-pixel SP.

[0140] In an embodiment of the present disclosure, the color conversion layer CCL may be disposed on the second electrode REL2 , but the present disclosure is not limited thereto. In an embodiment, the color conversion layer CCL may be directly disposed on the substrate SUB.

[0141] In a plan view, the color conversion layer CCL may overlap the second electrode REL2 and the second contact electrode CNE2. In a cross-sectional view, in the case where the color conversion layer CCL is disposed below the second contact electrode CNE2, the second contact electrode CNE2 may overlap the second electrode REL2 on opposite ends of the color conversion layer CCL and thus be electrically and / or physically coupled to the second electrode REL2. However, the present disclosure is not limited thereto, and the color conversion layer CCL may overlap the first contact electrode CNE1.

[0142] The color conversion layer CCL may be formed and / or disposed in the unit emission region 100 of the sub-pixel SP by an exposure method or the like.

[0143] As described above, if a predetermined voltage is applied to the opposite ends EP1 and EP2 of each of the first light emitting element LD1 and the second light emitting element LD2 through the first electrode REL1 and the second electrode REL2, each of the first light emitting element LD1 and the second light emitting element LD2 may emit blue light. The blue light emitted from each of the first light emitting element LD1 and the second light emitting element LD2 may travel to the color conversion layer CCL.

[0144] If blue light is introduced into the color conversion layer CCL, the red quantum dot QD may be excited so that the blue light may be absorbed and red light may be emitted. The red light emitted from the red quantum dot QD may be emitted in all directions.

[0145] The red light finally emitted from the color conversion layer CCL may be reflected in the forward direction of the light emitting device by the second electrode REL2 disposed under the color conversion layer CCL. In addition, the red light emitted from the color conversion layer CCL may be reflected in the forward direction of the light emitting device by the 1-1 electrode REL1_1 and the 1-2 electrode REL1_2 disposed adjacent to the color conversion layer CCL.

[0146] In the following, reference will be made to Figure 2 and Figure 3a The configuration of the light emitting device according to the embodiment of the present disclosure is described in a stacking order.

[0147] The first electrode REL1 and the second electrode REL2 may be disposed on the substrate SUB on which the barrier layer BRL is disposed. The first electrode REL1 and the second electrode REL2 may be disposed on the substrate SUB at positions spaced apart from each other by a predetermined distance.

[0148] The first insulating layer INS1 may be disposed on the first electrode REL1 and the second electrode REL2. The first insulating layer INS1 may be formed of an inorganic insulating layer including an inorganic material or an organic insulating layer including an organic material.

[0149] In an embodiment, a cover electrode (not shown) may be disposed between the first electrode REL1 and the first insulating layer INS1 and between the second electrode REL2 and the first insulating layer INS1. The cover electrode may prevent the first electrode REL1 and the second electrode REL2 from being damaged due to defects caused during a process of manufacturing the light emitting device, etc. The cover electrode may further strengthen adhesion between the substrate SUB and each of the first electrode REL1 and the second electrode REL2.

[0150] The light emitting element LD may be aligned on the first insulating layer INS1 .

[0151] The second insulating layer INS2 may be disposed on the light emitting element LD. The second insulating layer INS2 may be disposed on a portion of the upper surface of each of the light emitting elements LD so that opposite ends EP1 and EP2 of each of the light emitting elements LD may be exposed. The second insulating layer INS2 may be formed of an inorganic insulating layer including an inorganic material or an organic insulating layer including an organic material.

[0152] The third insulating layer INS3 may be disposed on the second insulating layer INS2. The third insulating layer INS3 may play a role in planarizing a stepped portion formed by the second insulating layer INS2 and the light emitting element LD.

[0153] The color conversion layer CCL may be disposed on the substrate SUB including the third insulating layer INS3. The color conversion layer CCL may be formed and / or disposed on the second electrode REL2 on the substrate SUB. In detail, the color conversion layer CCL may be disposed on the second electrode REL2 between the first light emitting element LD1 and the second light emitting element LD2.

[0154] The first contact electrode CNE1 and the second contact electrode CNE2 may be disposed on the third insulating layer INS3. The first contact electrode CNE1 may be disposed on one side surface of the third insulating layer INS3 and partially overlap the third insulating layer INS3. The second contact electrode CNE2 may be disposed on the other side surface of the third insulating layer INS3 and partially overlap the third insulating layer INS3. In addition, the second contact electrode CNE2 may be disposed on the color conversion layer CCL and overlap the color conversion layer CCL and the second electrode REL2.

[0155] The first and second contact electrodes CNE1 and CNE2 may be disposed on the third insulating layer INS3 and may be spaced apart from each other by a predetermined distance so that the first and second contact electrodes CNE1 and CNE2 can be electrically and / or physically separated from each other.

[0156] A fourth insulating layer INS4 may be disposed on the first contact electrode CNE1 and the second contact electrode CNE2. An overcoat layer OC may be disposed on the fourth insulating layer INS4.

[0157] As described above, the light emitting device according to the embodiment of the present disclosure may emit light having excellent color reproducibility through the color conversion layer CCL including the red quantum dots QD, so that light output efficiency may be enhanced.

[0158] In addition, the light-emitting device according to the embodiment of the present disclosure can set the color conversion layer CCL including the red quantum dots QD on the same substrate SUB as the substrate SUB of the light-emitting element LD, so that the distance between the light-emitting element LD and the color conversion layer CCL can be minimized. Therefore, the blue light emitted from the light-emitting element LD can be directly incident on the color conversion layer CCL without light loss, so that the amount of light finally emitted from the color conversion layer CCL can be increased. Therefore, the light output efficiency of the light-emitting device can be enhanced.

[0159] If the color conversion layer CCL is not disposed on the substrate SUB (hereinafter, referred to as the "first substrate") on which the light emitting element LD is disposed but is disposed on a separate substrate (hereinafter, referred to as the "second substrate") facing the first substrate SUB, the distance between the light emitting element LD disposed on the first substrate SUB and the color conversion layer CCL disposed on the second substrate is increased. In this case, the blue light emitted from the light emitting element LD may be incident not only on the color conversion layer CCL disposed in the sub-pixel SP, but also on the color conversion layer disposed in the sub-pixel adjacent to the sub-pixel SP. In this case, color mixing may be caused between the color conversion layer CCL disposed in the sub-pixel SP and the color conversion layer disposed in the sub-pixel adjacent to the sub-pixel SP.

[0160] In addition, during the process of combining the first substrate SUB and the second substrate, the light emitting element LD of the first substrate SUB may be misaligned with the color conversion layer CCL of the second substrate. In this case, color mixing may also be caused between the color conversion layer CCL disposed in the sub-pixel SP and the color conversion layer disposed in the sub-pixel adjacent to the sub-pixel SP.

[0161] In view of this, in the light emitting device according to the embodiment of the present disclosure, the color conversion layer CCL and the light emitting element LD may be disposed on the same first substrate SUB to prevent color mixing between the sub-pixel SP and the sub-pixels adjacent thereto and prevent misalignment.

[0162] In addition, in the light emitting device according to the embodiment of the present disclosure, the color conversion layer CCL and the light emitting element LD can be disposed on the same first substrate SUB, so that the process of forming the color conversion layer CCL on the second substrate can be skipped. Therefore, the process of manufacturing the light emitting device according to the embodiment of the present disclosure can be simplified.

[0163] Figure 3b A light emitting device according to an embodiment of the present disclosure is shown and corresponds to Figure 2 Cross-sectional view along line II'.

[0164] In addition to the fact that the color conversion layer is arranged on the second contact electrode, Figure 3b The light emitting device shown in FIG. 1 may have Figure 2 and Figure 3a The structure of the light emitting device is basically the same or similar to that of the light emitting device.

[0165] Therefore, to avoid redundant explanations, Figure 3bThe description of the light emitting device will focus on the differences from the description of the previous embodiment. Components not separately described in the following description of this embodiment are consistent with the components of the previous embodiment. The same reference numerals will be used to represent the same components, and similar reference numerals will be used to represent similar components.

[0166] Reference Figure 1a , Figure 2 and Figure 3b , the light emitting device according to the embodiment of the present disclosure may include a substrate SUB and a plurality of light emitting elements LD disposed on the substrate SUB, on which at least one sub-pixel SP having a unit emission region 100 is disposed.

[0167] In the embodiment of the present disclosure, the plurality of light emitting elements LD may each be a light emitting diode manufactured to have an ultra-small size and emitting blue light having a relatively short wavelength in a visible light region.

[0168] First and second connection lines CNL1 and CNL2 , first and second electrodes REL1 and REL2 , first and second contact electrodes CNE1 and CNE2 , and a color conversion layer CCL may be disposed in the unit emission region 100 of the sub-pixel SP.

[0169] The first electrode REL1 and the second electrode REL2 may be disposed at the same plane and spaced apart from each other by a predetermined distance.

[0170] The first contact electrode CNE1 and the second contact electrode CNE2 may be disposed on the corresponding electrodes and may be electrically and / or physically coupled to the corresponding electrodes. For example, the first contact electrode CNE1 may be disposed on the first electrode REL1 and may be electrically and / or physically coupled to the first electrode REL1. The second contact electrode CNE2 may be disposed on the second electrode REL2 and may be electrically and / or physically coupled to the second electrode REL2.

[0171] Despite Figure 3b As shown in FIG. 1 , the first contact electrode CNE1 and the second contact electrode CNE2 are disposed at the same plane and are separated from each other by a predetermined distance, but the present disclosure is not limited thereto. In an embodiment, the first contact electrode CNE1 and the second contact electrode CNE2 may be disposed on different layers. Figure 3c A detailed description is made of an embodiment in which the first contact electrode CNE1 and the second contact electrode CNE2 are disposed on different layers.

[0172] The color conversion layer CCL may convert blue light into a specific color light that is ultimately emitted from the sub-pixel SP. For example, in the case where the sub-pixel SP is a red sub-pixel, the color conversion layer CCL may convert blue light into red light and emit red light. To this end, the color conversion layer CCL may include red quantum dots QD. The red quantum dots QD may be disposed in the color conversion layer CCL in a form in which the red quantum dots QD are distributed in a transparent resin.

[0173] The color conversion layer CCL may be disposed on the second contact electrode CNE2 in the unit emission region 100 of the sub-pixel SP, and overlap the second electrode REL2 and the second contact electrode CNE2.

[0174] The color conversion layer CCL may be formed on the second contact electrode CNE2 by an exposure method or the like after the first and second contact electrodes CNE1 and CNE2 are formed on the substrate SUB.

[0175] The red light finally emitted from the color conversion layer CCL may be reflected in a forward direction of the light emitting device by the first and second electrodes REL1 and REL2 disposed under the color conversion layer CCL.

[0176] The fourth insulating layer INS4 may be disposed on the color conversion layer CCL. The fourth insulating layer INS4 may prevent the first and second contact electrodes CNE1 and CNE2 and the color conversion layer CCL from being exposed to the outside, thereby protecting the first and second contact electrodes CNE1 and CNE2 and the color conversion layer CCL. The fourth insulating layer INS4 may be made of a material such as silicon nitride SiN x An inorganic insulating layer is formed to prevent oxygen, water, etc. from being introduced into the light emitting element LD and the color conversion layer CCL from the outside.

[0177] As described above, in the light emitting device according to the embodiment of the present disclosure, the color conversion layer CCL may be disposed on the same substrate SUB as that of the light emitting element LD, so that the efficiency of light finally emitted from the subpixel SP may be enhanced.

[0178] Figure 3c A light emitting device according to an embodiment of the present disclosure is shown and corresponds to Figure 2 Cross-sectional view along line II'.

[0179] Apart from the fact that the first contact electrode and the second contact electrode are arranged on different layers, Figure 3c The light emitting device shown in FIG. 1 may have Figure 2 and Figure 3a The structure of the light emitting device is basically the same or similar to that of the light emitting device.

[0180] Therefore, to avoid redundant explanations, Figure 3cThe description of the light emitting device will focus on the differences from the description of the previous embodiment. Components not separately described in the following description of this embodiment are consistent with the components of the previous embodiment. The same reference numerals will be used to represent the same components, and similar reference numerals will be used to represent similar components.

[0181] Reference Figure 1a , Figure 2 and Figure 3c , the light emitting device according to the embodiment of the present disclosure may include a substrate SUB and a plurality of light emitting elements LD disposed on the substrate SUB, on which at least one sub-pixel SP having a unit emission region 100 is disposed.

[0182] In the embodiment of the present disclosure, each of the plurality of light emitting elements LD may be a light emitting diode that is manufactured to have an ultra-small size and may emit blue light having a relatively short wavelength in a visible light region.

[0183] First and second connection lines CNL1 and CNL2 , first and second electrodes REL1 and REL2 , first and second contact electrodes CNE1 and CNE2 , and a color conversion layer CCL may be disposed in the unit emission region 100 of the sub-pixel SP.

[0184] The first electrode REL1 and the second electrode REL2 may be disposed at the same plane and may be spaced apart from each other by a predetermined distance.

[0185] The first contact electrode CNE1 may be disposed on one of the opposite ends EP1 and EP2 of each of the first electrode REL1 and the light emitting element LD.

[0186] The third insulating layer INS3 may be disposed on the first contact electrode CNE1. The third insulating layer INS3 may prevent the first contact electrode CNE1 from being exposed to the outside, thus preventing the first contact electrode CNE1 from being corroded.

[0187] The color conversion layer CCL may be formed on the second electrode REL2 by an exposure method, etc. on the substrate SUB on which the first contact electrode CNE1 is disposed. In a plan view, the color conversion layer CCL may overlap the second electrode REL2.

[0188] The color conversion layer CCL may include red quantum dots QD for converting blue light emitted from the light emitting element LD into red light. The red light finally emitted from the color conversion layer CCL may be reflected in the forward direction of the light emitting device by the first and second electrodes REL1 and REL2 disposed under the color conversion layer CCL.

[0189] The second contact electrode CNE2 may be disposed on the color conversion layer CCL. The second contact electrode CNE2 may also be disposed on the second electrode REL2 and the other of the opposite ends EP1 and EP2 of each light emitting element LD.

[0190] In a cross-sectional view, the second contact electrode CNE2 may overlap the second electrode REL2 on opposite ends of the color conversion layer CCL with the color conversion layer CCL interposed therebetween. The second contact electrode CNE2 may be disposed on a layer different from that of the first contact electrode CNE1.

[0191] A fourth insulating layer INS4 may be disposed on the second contact electrode CNE2. An overcoat layer OC may be disposed on the fourth insulating layer INS4.

[0192] As described above, in the light emitting device according to the embodiment of the present disclosure, the color conversion layer CCL may be disposed on the same substrate SUB as that of the light emitting element LD, so that the efficiency of light finally emitted from the subpixel SP may be enhanced.

[0193] Figure 4 is a plan view showing a unit emission area of ​​a light emitting device according to an embodiment of the present disclosure. Figure 5 is along Figure 4 A cross-sectional view taken along line II-II'.

[0194] In addition to the fact that the second electrode includes the 2-1 electrode and the 2-2 electrode branched from the second connection line, Figure 4 and Figure 5 The light emitting device shown in FIG. 1 may have Figure 2 and Figure 3a The structure of the light emitting device is basically the same or similar to that of the light emitting device.

[0195] Therefore, to avoid redundant explanations, Figure 4 and Figure 5 The description of the light emitting device will focus on the differences from the description of the previous embodiment. Components not separately described in the following description of this embodiment are consistent with the components of the previous embodiment. The same reference numerals will be used to represent the same components, and similar reference numerals will be used to represent similar components.

[0196] Reference Figure 1a , Figure 4 and Figure 5 , the light emitting device according to the embodiment of the present disclosure may include a substrate SUB and a plurality of light emitting elements LD disposed on the substrate SUB, on which at least one sub-pixel SP having a unit emission region 100 is disposed.

[0197] In the embodiment of the present disclosure, the plurality of light emitting elements LD may each be a light emitting diode manufactured to have an ultra-small size and emitting blue light having a relatively short wavelength in a visible light region.

[0198] First and second connection lines CNL1 and CNL2 , first and second electrodes REL1 and REL2 , first and second contact electrodes CNE1 and CNE2 , and a color conversion layer CCL may be disposed in the unit emission region 100 of the sub-pixel SP.

[0199] The first connection line CNL1 may extend in the first direction DR1 and be disposed only in the sub-pixel SP so that the sub-pixel SP may be electrically separated from sub-pixels adjacent thereto.

[0200] The second connection line CNL2 may extend in a direction parallel to the direction in which the first connection line CNL1 extends. The second connection line CNL2 may extend not only to the sub-pixel SP but also to a sub-pixel adjacent to the sub-pixel SP.

[0201] The first electrode REL1 may include a 1-1 electrode REL1_1 and a 1-2 electrode REL1_2 branching from the first connection line CNL1 in a second direction DR2 intersecting the first direction DR1. The 1-1 electrode REL1_1, the 1-2 electrode REL1_2, and the first connection line CNL1 may be integrally provided and electrically and / or physically coupled to each other.

[0202] The second electrode REL2 may include a 2-1 electrode REL2_1 and a 2-2 electrode REL2_2 branched from the second connection line CNL2 in the second direction DR2. The 2-1 electrode REL2_1, the 2-2 electrode REL2_2, and the second connection line CNL2 may be integrally provided and electrically and / or physically coupled to each other.

[0203] The 1-1 electrode REL1_1 and the 2-1 electrode REL2_1 may be disposed on the substrate SUB at positions spaced a predetermined distance from each other with the first light emitting element LD1 of the light emitting elements LD interposed therebetween.

[0204] The 1-1 electrode REL1_1 may be electrically coupled to one of opposite ends EP1 and EP2 of each of the first light emitting elements LD1 through the first contact electrode CNE1. The 2-1 electrode REL2_1 may be electrically coupled to the other end of each of the first light emitting elements LD1 through the second contact electrode CNE2.

[0205] The 1-2 electrode REL1_2 may be electrically coupled to one of the opposite ends EP1 and EP2 of each of the second light emitting elements LD2 through the first contact electrode CNE1. The 2-2 electrode REL2_2 may be electrically coupled to the other end of each of the second light emitting elements LD2 through the second contact electrode CNE2.

[0206] The first electrode REL1 and the second electrode REL2 may be formed of a conductive material having a predetermined reflectivity so that light emitted from the color conversion layer CCL may travel in a direction in which an image of the light emitting device is displayed.

[0207] The color conversion layer CCL may convert blue light emitted from each of the light emitting elements LD into light having a specific color and then emit the light. The color conversion layer CCL may include red quantum dots QD, which are light conversion particles for converting blue light into red light.

[0208] In an embodiment of the present disclosure, the color conversion layer CCL may be disposed on the substrate SUB between the first light emitting element LD1 and the second light emitting element LD2 in the unit emission region 100 of the sub-pixel SP.

[0209] In a plan view, the color conversion layer CCL may be disposed on the substrate SUB between the 2-1st electrode REL2_1 and the 2-2nd electrode REL2_2, and may overlap the second contact electrode CNE2. The second contact electrode CNE2 may be disposed on the color conversion layer CCL, but the present disclosure is not limited thereto. In an embodiment, the second contact electrode CNE2 may be disposed under the color conversion layer CCL.

[0210] The color conversion layer CCL may be formed by an exposure method or the like and / or disposed between the 2-1st electrode REL2_1 and the 2-2nd electrode REL2_2 before the first and second contact electrodes CNE1 and CNE2 are formed in the unit emission region 100 of the sub-pixel SP.

[0211] As described above, if a predetermined voltage is applied to the opposite ends EP1 and EP2 of each of the first light emitting element LD1 and the second light emitting element LD2 through the first electrode REL1 and the second electrode REL2, each of the first light emitting element LD1 and the second light emitting element LD2 may emit blue light. The blue light emitted from each of the first light emitting element LD1 and the second light emitting element LD2 may travel to the color conversion layer CCL.

[0212] If blue light is introduced into the color conversion layer CCL, the red quantum dot QD may be excited so that the blue light may be absorbed and red light may be emitted. The red light emitted from the red quantum dot QD may be emitted in all directions.

[0213] The red light finally emitted from the color conversion layer CCL may be reflected in a forward direction of the light emitting device by the first electrode REL1 and the second electrode REL2 .

[0214] As described above, in the light emitting device according to the embodiment of the present disclosure, the color conversion layer CCL may be disposed on the same substrate SUB as that of the light emitting element LD, so that the efficiency of light finally emitted from the subpixel SP may be enhanced.

[0215] Figure 6 is a plan view showing a unit emission area of ​​a light emitting device according to an embodiment of the present disclosure. Figure 7 is along Figure 6 A cross-sectional view taken along line III-III'.

[0216] In addition to the fact that the dummy electrode is disposed between the substrate and the color conversion layer, Figure 6 and Figure 7 The light emitting device shown in FIG. 1 may have Figure 4 and Figure 5 The structure of the light emitting device is basically the same or similar to that of the light emitting device.

[0217] Therefore, to avoid redundant explanations, Figure 6 and Figure 7 The description of the light emitting device will focus on the differences from the description of the previous embodiment. Components not separately described in the following description of this embodiment are consistent with the components of the previous embodiment. The same reference numerals will be used to represent the same components, and similar reference numerals will be used to represent similar components.

[0218] Reference Figure 1a , Figure 6 and Figure 7 , the light emitting device according to the embodiment of the present disclosure may include a substrate SUB and a plurality of light emitting elements LD disposed on the substrate SUB, on which at least one sub-pixel SP having a unit emission region 100 is disposed.

[0219] In the embodiment of the present disclosure, each of the plurality of light emitting elements LD may be a light emitting diode that is manufactured to have an ultra-small size and may emit blue light having a relatively short wavelength in a visible light region.

[0220] First and second connection lines CNL1 and CNL2 , first and second electrodes REL1 and REL2 , first and second contact electrodes CNE1 and CNE2 , a color conversion layer CCL, and a dummy electrode DRE may be disposed in the unit emission region 100 of the sub-pixel SP.

[0221] The first electrode REL1 and the second electrode REL2 may be disposed at the same plane and may be spaced apart from each other by a predetermined distance.

[0222] The first and second contact electrodes CNE1 and CNE2 may be disposed on the third insulating layer INS3 and may be spaced apart from each other by a predetermined distance to be electrically separated from each other.

[0223] The color conversion layer CCL may include red quantum dots QD for converting blue light emitted from each of the light emitting elements LD into red light.

[0224] The color conversion layer CCL may be disposed on the substrate SUB between the first light emitting element LD1 and the second light emitting element LD2 of the light emitting elements LD in the unit emission region 100 of the sub-pixel SP.

[0225] In a plan view, the color conversion layer CCL may be disposed on the substrate SUB between the 2-1st electrode REL2_1 and the 2-2nd electrode REL2_2, and may overlap the second contact electrode CNE2. The second contact electrode CNE2 may be disposed on the color conversion layer CCL, but the present disclosure is not limited thereto. In an embodiment, the second contact electrode CNE2 may be disposed under the color conversion layer CCL.

[0226] The dummy electrode DRE may be disposed between the color conversion layer CCL and the substrate SUB. The dummy electrode DRE may be a dummy reflective component configured to reflect red light emitted from the color conversion layer CCL and traveling downward from the color conversion layer CCL in a direction in which an image of the light-emitting device is displayed. To this end, the dummy electrode DRE may be formed of a conductive material having a predetermined reflectivity.

[0227] The conductive material may include, for example, metals such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr or alloys thereof, conductive oxides such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO) or indium tin zinc oxide (ITZO), and conductive polymers such as PEDOT.

[0228] The first electrode REL1 and the second electrode REL2 may include the same material as that of the dummy electrode DRE, but the present disclosure is not limited thereto.

[0229] In the light emitting device, the dummy electrode DRE is disposed under the color conversion layer CCL so that red light traveling downward from the color conversion layer CCL can also be reflected in the direction of displaying an image, thereby further enhancing the efficiency of light finally emitted from the subpixel SP.

[0230] Figure 8 is a plan view showing a unit emission area of ​​a light emitting device according to an embodiment of the present disclosure. Fig. 9 is along Figure 8A cross-sectional view taken along line IV-IV'.

[0231] In addition to the fact that the cover insulating layer is disposed on the first contact electrode and the second contact electrode and the light blocking pattern is disposed on the fourth insulating layer, Figure 8 and Fig. 9 The light emitting device shown in FIG. 1 may have Figure 4 and Figure 5 The structure of the light emitting device is basically the same or similar to that of the light emitting device.

[0232] Therefore, to avoid redundant explanations, Figure 8 and Fig. 9 The description of the light emitting device will focus on the differences from the description of the previous embodiment. Components not separately described in the following description of this embodiment are consistent with the components of the previous embodiment. The same reference numerals will be used to represent the same components, and similar reference numerals will be used to represent similar components.

[0233] Reference Figure 1a , Figure 8 and Fig. 9 , the light emitting device according to the embodiment of the present disclosure may include a substrate SUB and a plurality of light emitting elements LD disposed on the substrate SUB, on which at least one sub-pixel SP having a unit emission region 100 is disposed.

[0234] In the embodiment of the present disclosure, the plurality of light emitting elements LD may each be a light emitting diode manufactured to have an ultra-small size and emitting blue light having a relatively short wavelength in a visible light region.

[0235] First and second connection lines CNL1 and CNL2 , first and second electrodes REL1 and REL2 , first and second contact electrodes CNE1 and CNE2 , a color conversion layer CCL, and a light blocking pattern BLP may be disposed in the unit emission region 100 of the sub-pixel SP.

[0236] The first electrode REL1 and the second electrode REL2 may be disposed at the same plane and may be spaced apart from each other by a predetermined distance.

[0237] The first electrode REL1 may include a 1-1st electrode REL1_1 and a 1-2nd electrode REL1_2, which are disposed on the substrate SUB at positions spaced a predetermined distance from each other and are thus electrically and / or physically separated from each other. The second electrode REL2 may include a 2-1st electrode REL2_1 and a 2-2nd electrode REL2_2, which are disposed on the substrate SUB at positions spaced a predetermined distance from each other but are electrically and / or physically coupled to each other.

[0238] The color conversion layer CCL may be disposed on the substrate SUB between the 2-1st electrode REL2_1 and the 2-2nd electrode REL2_2. The color conversion layer CCL may include red quantum dots QD for converting blue light emitted from each of the light emitting elements LD into red light.

[0239] The first contact electrode CNE1 and the second contact electrode CNE2 may be disposed at the same plane and spaced apart from each other by a predetermined distance. In detail, the first contact electrode CNE1 and the second contact electrode CNE2 may be disposed on the third insulating layer INS3 and spaced apart from each other by a predetermined distance to be electrically separated from each other.

[0240] The second contact electrode CNE2 may be disposed on the color conversion layer CCL and may overlap the color conversion layer CCL. In addition, the second contact electrode CNE2 may be disposed on the 2-1st electrode REL2_1 and the 2-2nd electrode REL2_2 and may overlap the 2-1st electrode REL2_1 and the 2-2nd electrode REL2_2.

[0241] The cover insulating layer CPL may be disposed on the first contact electrode CNE1 and the second contact electrode CNE2. The cover insulating layer CPL may prevent the color conversion layer CCL and the first contact electrode CNE1 and the second contact electrode CNE2 from being exposed to the outside, thereby protecting the first contact electrode CNE1 and the second contact electrode CNE2 and the color conversion layer CCL. In particular, the cover insulating layer CPL may include an inorganic insulating layer formed of an inorganic material to prevent oxygen, water, etc. from being introduced into the light emitting element LD and the color conversion layer CCL from the outside.

[0242] A light blocking pattern BLP may be disposed on the capping insulating layer CPL.

[0243] The light blocking pattern BLP may be disposed on the capping insulating layer CPL to correspond to an upper surface of the light emitting element LD.

[0244] The light blocking pattern BLP can absorb blue light from among the light emitted from the light emitting element LD that travels toward the upper surface of the light emitting element LD, thereby preventing the color purity of the light emitting device from being deteriorated. To this end, the light blocking pattern BLP may include a material capable of absorbing blue light that travels toward the upper surface of the light emitting element LD. For example, the light blocking pattern BLP may include a black matrix, but the present disclosure is not limited thereto.

[0245] In addition, the light blocking pattern BLP may reduce reflection of external light by absorbing light incident on the light emitting device from the outside.

[0246] A fourth insulating layer INS4 may be disposed on the light blocking pattern BLP. An overcoat layer OC may be disposed on the fourth insulating layer INS4.

[0247] As described above, in the light-emitting device according to the embodiment of the present disclosure, the color conversion layer CCL can be disposed on the substrate SUB that is the same as the substrate SUB of the light-emitting element LD, and the light blocking pattern BLP can be disposed on the upper surface of the light-emitting element LD, so that the efficiency of the light ultimately emitted from the sub-pixel SP can be enhanced and the color purity of the sub-pixel SP can be prevented from deteriorating.

[0248] Fig.10 is a plan view showing a unit emission area of ​​a light emitting device according to an embodiment of the present disclosure. Fig.11 is along Fig.10 A cross-sectional view taken along line V-V'.

[0249] In addition to the fact that the auxiliary pattern is disposed between the light blocking pattern and the cover insulating layer, Fig.10 and Fig.11 The light emitting device shown in FIG. 1 may have Figure 8 and Fig. 9 The structure of the light emitting device is basically the same or similar to that of the light emitting device.

[0250] Therefore, to avoid redundant explanations, Fig.10 and Fig.11 The description of the light emitting device will focus on the differences from the description of the previous embodiment. Components not separately described in the following description of this embodiment are consistent with the components of the previous embodiment. The same reference numerals will be used to represent the same components, and similar reference numerals will be used to represent similar components.

[0251] Reference Figure 1a , Fig.10 and Fig.11 , the light emitting device according to the embodiment of the present disclosure may include a substrate SUB and a plurality of light emitting elements LD disposed on the substrate SUB, on which at least one sub-pixel SP having a unit emission region 100 is disposed.

[0252] In the embodiment of the present disclosure, the plurality of light emitting elements LD may each be a light emitting diode that is manufactured to have an ultra-small size and may emit blue light having a relatively short wavelength in a visible light region.

[0253] First and second connection lines CNL1 and CNL2 , first and second electrodes REL1 and REL2 , first and second contact electrodes CNE1 and CNE2 , a color conversion layer CCL, a light blocking pattern BLP, and an auxiliary pattern ARP may be disposed in the unit emission region 100 of the subpixel SP.

[0254] The first electrode REL1 may include a 1-1st electrode REL1_1 and a 1-2nd electrode REL1_2, which are disposed on the substrate SUB at positions spaced a predetermined distance from each other and are thus electrically and / or physically separated from each other. The second electrode REL2 may include a 2-1st electrode REL2_1 and a 2-2nd electrode REL2_2, which are disposed on the substrate SUB at positions spaced a predetermined distance from each other but are electrically and / or physically coupled to each other.

[0255] The color conversion layer CCL may be disposed on the substrate SUB between the 2-1st electrode REL2_1 and the 2-2nd electrode REL2_2. The second contact electrode CNE2 may be disposed on the color conversion layer CCL and may overlap the color conversion layer CCL.

[0256] A cap insulating layer CPL may be disposed on the first and second contact electrodes CNE1 and CNE2 .

[0257] The auxiliary pattern ARP may be disposed on the cover insulating layer CPL. The auxiliary pattern ARP may be disposed on the cover insulating layer CPL to correspond to an upper surface of the light emitting element LD.

[0258] The auxiliary pattern ARP may reflect blue light traveling toward the upper surface of the light emitting element LD toward the color conversion layer CCL and thus increase excitation light of the quantum dots QD disposed in the color conversion layer CCL. To this end, the auxiliary pattern ARP may be formed of a conductive material having a predetermined reflectivity.

[0259] The auxiliary pattern ARP may include the same material as that of the first and second electrodes REL1 and REL2 , but the present disclosure is not limited thereto.

[0260] The light blocking pattern BLP may be disposed on the auxiliary pattern ARP. The light blocking pattern BLP may be formed of a black matrix and may absorb the blue light emitted from the light emitting element LD that travels toward the upper surface of the light emitting element LD and is not reflected toward the color conversion layer CCL by the auxiliary pattern ARP, thereby preventing the color purity of the light emitting device from being deteriorated.

[0261] In addition, the light blocking pattern BLP can absorb light incident on the light emitting device from the outside, and can absorb light reflected by the auxiliary pattern ARP in a direction of displaying an image of the light emitting device among the light incident on the light emitting device, thereby reducing reflection of external light from the light emitting device.

[0262] As described above, in the light-emitting device according to the embodiment of the present disclosure, the color conversion layer CCL can be set on the substrate SUB that is the same as the substrate SUB of the light-emitting element LD, and the auxiliary pattern ARP and the light blocking pattern BLP can be set on the upper surface of the light-emitting element LD, so that the efficiency of the light finally emitted from the sub-pixel SP can be enhanced and the color purity of the sub-pixel SP can be prevented from deteriorating.

[0263] Fig.12 The present invention shows a display device according to an embodiment of the present invention, and in particular, shows a display device using Figure 1a Schematic plan view of a display device in which the light-emitting element shown in FIG. 1 is used as a light source.

[0264] To illustrate, Fig.12 The structure of the display device is schematically shown, focusing on the display area on which the image is displayed. In some embodiments, although not shown, at least one driving circuit (eg, a scan driver and a data driver) and / or a plurality of lines may also be provided in the display device.

[0265] Reference Figure 1a and Fig.12 According to an embodiment of the present disclosure, a display device may include a substrate SUB, pixels PXL disposed on the substrate SUB and each including at least one light emitting element LD, a driver (not shown) disposed on the substrate SUB and configured to drive the pixels PXL, and a line component (not shown) configured to combine the pixels PXL with the driver.

[0266] According to the method of driving the light emitting element LD, the display device can be classified into a passive matrix type display device and an active matrix type display device. For example, in the case where the display device is implemented as an active matrix type, each of the pixels PXL may include a driving transistor configured to control the amount of current to be supplied to the light emitting element LD and a switching transistor configured to transmit a data signal to the driving transistor.

[0267] Recently, an active matrix display device capable of selectively turning on each pixel PXL while taking into account resolution, contrast, and operating speed has been developed. However, the present disclosure is not limited thereto. For example, a passive matrix display device in which the pixels PXL can be turned on in groups may also employ components (e.g., first electrodes and second electrodes) for driving the light emitting element LD.

[0268] The substrate SUB may include a display area DA and a non-display area NDA.

[0269] In an embodiment, the display area DA may be disposed in the central portion of the display device, and the non-display area NDA may be disposed in the peripheral portion of the display device in a manner of surrounding the display area DA. The positions of the display area DA and the non-display area NDA are not limited thereto, and their positions may be changed.

[0270] The display area DA may be a region in which pixels PXL for displaying an image are disposed. The non-display area NDA may be a region in which a driver for driving the pixels PXL and some line components for coupling the pixels PXL to the driver are disposed.

[0271] The display area DA may have various shapes. For example, the display area DA may be provided in various forms, such as a closed polygon including sides formed by straight lines, a circle including sides formed by curved lines, an ellipse, etc., and a semicircle including sides formed by straight lines and sides formed by curved lines, a semiellipse, etc.

[0272] The non-display area NDA may be disposed on at least one side of the display area DA. In an embodiment of the present disclosure, the non-display area NDA may surround the periphery of the display area DA.

[0273] The pixels PXL may be disposed in the display area DA on the substrate SUB. Each of the pixels PXL refers to a minimum unit for displaying an image, and a plurality of pixels may be provided.

[0274] Each of the pixels PXL may include a light emitting element LD configured to be driven in response to a corresponding scan signal and a corresponding data signal. The light emitting element LD may have a small size corresponding to a nanometer level or a micrometer level and be coupled in parallel to a light emitting element disposed adjacent thereto. The light emitting element LD may form a light source of the corresponding pixel PXL.

[0275] The pixels PXL may be arranged in a matrix form along rows extending in a first direction DR1 and columns extending in a second direction DR2 intersecting the first direction DR1. However, the arrangement of the pixels PXL is not limited to a specific arrangement. In other words, the pixels PXL may be arranged in various forms.

[0276] The driver may provide a signal to each pixel PXL through the line assembly and may thus control the operation of the pixel PXL. Fig.12 In the figure, the wire components are omitted for illustration.

[0277] The driver may include a scan driver configured to provide a scan signal to the pixel PXL through a scan line, an emission driver configured to provide an emission control signal to the pixel PXL through an emission control line, a data driver configured to provide a data signal to the pixel PXL through a data line, and a timing controller. The timing controller may control the scan driver, the emission driver, and the data driver.

[0278] Figures 13a to 13c is a diagram showing various embodiments Fig.12 A circuit diagram of an example of a unit emission region of a display device.

[0279] Reference Figures 13a to 13c , each of the first to third sub-pixels may be constructed by an active pixel. However, the type, construction and / or driving method of each of the first to third sub-pixels are not particularly limited. For example, each of the first to third sub-pixels may be constructed by a pixel of a passive or active display device that may have various known structures.

[0280] In addition, refer to Figures 13a to 13c , the first to third sub-pixels may have substantially the same structure or similar structures. Hereinafter, for convenience, the first sub-pixel among the first to third sub-pixels will be described as a representative example.

[0281] Reference Figure 1a , Fig.12 and Fig.13a , the first sub-pixel SP1 may include a plurality of light emitting elements LD coupled in parallel to each other between a first driving power source VDD and a second driving power source VSS, and a pixel driving circuit 144 configured to drive the light emitting elements LD.

[0282] A first electrode (eg, an anode electrode) of each of the light emitting elements LD may be coupled to a first driving power source VDD via the pixel driving circuit 144. A second electrode (eg, a cathode electrode) of each of the light emitting elements LD may be coupled to a second driving power source VSS.

[0283] The first driving power source VDD and the second driving power source VSS may have different potentials. For example, the second driving power source VSS may have a potential lower than that of the first driving power source VDD by a value equal to or greater than the threshold voltage of the light emitting element LD.

[0284] Each of the light emitting elements LD can emit light with brightness corresponding to the driving current controlled by the pixel driving circuit 144 .

[0285] although Figures 13a to 13cAn embodiment in which the light-emitting elements LD are connected in parallel to each other in the same direction (e.g., forward direction) between the first driving power supply VDD and the second driving power supply VSS is shown, but the present disclosure is not limited thereto. For example, in an embodiment, some of the light-emitting elements LD may be combined in the forward direction between the first driving power supply VDD and the second driving power supply VSS, and other light-emitting elements LD may be combined in the reverse direction. One of the first driving power supply VDD and the second driving power supply VSS may be supplied in the form of an AC voltage. In this case, the light-emitting elements LD may emit light alternately in groups of the same connection direction. Optionally, in an embodiment, the first sub-pixel SP1 may include a single light-emitting element LD.

[0286] In an embodiment of the present disclosure, the pixel driving circuit 144 may include a first transistor T1, a second transistor T2 and a storage capacitor Cst. However, the structure of the pixel driving circuit 144 is not limited to Fig.13a The embodiment shown in .

[0287] A first electrode of a first transistor (T1; a switching transistor) is coupled to a data line Dj, and a second electrode thereof is coupled to a first node N1. Here, the first electrode and the second electrode of the first transistor T1 may be different electrodes. For example, if the first electrode is a source electrode, the second electrode is a drain electrode. A gate electrode of the first transistor T1 is coupled to a scan line Si.

[0288] When a scan signal having a voltage (e.g., a low level voltage) capable of turning on the first transistor T1 is supplied from the scan line Si, the first transistor T1 is turned on to electrically couple the data line Dj with the first node N1. Here, a data signal corresponding to a frame is supplied to the data line Dj, whereby the data signal is transmitted to the first node N1. The data signal transmitted to the first node N1 is charged to the storage capacitor Cst.

[0289] A first electrode of a second transistor (T2; driving transistor) is coupled to a first driving power source VDD, and a second electrode thereof is electrically coupled to a first electrode of each light emitting element LD. A gate electrode of the second transistor T2 is coupled to a first node N1. The second transistor T2 can control the amount of driving current to be supplied to the light emitting element LD in response to a voltage of the first node N1.

[0290] One electrode of the storage capacitor Cst is coupled to the first driving power source VDD and the other electrode thereof is coupled to the first node N1. The storage capacitor Cst may charge a voltage corresponding to the data signal supplied to the first node N1 and may maintain the charged voltage until a data signal of a subsequent frame is supplied.

[0291] To illustrate, Fig.13aA pixel driving circuit 144 having a relatively simple structure is shown, which includes a first transistor T1 configured to transmit a data signal to a first subpixel SP1, a storage capacitor Cst configured to store the data signal, and a second transistor T2 configured to supply a driving current corresponding to the data signal to the light emitting element LD.

[0292] However, the present disclosure is not limited to the aforementioned structure, and the structure of the pixel driving circuit 144 may be changed in various ways. For example, the pixel driving circuit 144 may further include at least one transistor element such as a transistor element configured to compensate for the threshold voltage of the second transistor T2, a transistor element configured to initialize the first node N1, and / or a transistor element configured to control the emission time of the light emitting element LD, or other circuit elements such as a boost capacitor for boosting the voltage of the first node N1.

[0293] In addition, despite the Fig.13a , the transistors (e.g., the first transistor T1 and the second transistor T2) included in the pixel driving circuit 144 have been shown to be formed of P-type transistors, but the present disclosure is not limited thereto. In other words, at least one of the first transistor T1 and the second transistor T2 included in the pixel driving circuit 144 may be formed of an N-type transistor.

[0294] Reference Figure 1a , Fig.12 and Fig.13b , the first transistor T1 and the second transistor T2 according to the embodiment of the present disclosure may be formed by N-type transistors. In addition to the change in the connection position of some components due to the change in transistor type, Fig.13b The configuration and operation of the pixel driving circuit 144 shown in FIG. Fig.13a The configuration and operation of the pixel driving circuit 144 are similar. Therefore, detailed descriptions thereof will be omitted.

[0295] In the embodiment of the present disclosure, the configuration of the pixel driving circuit 144 is not limited to Fig.13a and Fig.13b For example, the pixel driving circuit 144 can be connected with Fig.13c The embodiment shown in FIG. 1 is constructed in the same manner.

[0296] Reference Figure 1a , Fig.12 and Fig.13c, the pixel driving circuit 144 may be coupled to the scan line Si and the data line Dj of the first sub-pixel SP1. For example, if the first sub-pixel SP1 is disposed on the i-th row and the j-th column of the display area DA, the pixel driving circuit 144 of the first sub-pixel SP1 may be coupled to the i-th scan line Si and the j-th data line Dj of the display area DA.

[0297] In an embodiment, the pixel driving circuit 144 may also be coupled to at least one scan line. For example, the subpixel SP1 disposed on the i-th row of the display area DA may also be coupled to the i-1th scan line Si-1 and / or the i+1th scan line Si+1.

[0298] In an embodiment, the pixel driving circuit 144 may be coupled not only to the first driving power source VDD and the second driving power source VSS, but also to a third power source. For example, the pixel driving circuit 144 may also be coupled to an initialization power source Vint.

[0299] Here, the pixel driving circuit 144 may include first to seventh transistors T1 to T7 and a storage capacitor Cst.

[0300] A first electrode (e.g., source electrode) of the first transistor (e.g., driving transistor) T1 may be coupled to the first driving power source VDD via the fifth transistor T5, and a second electrode (e.g., drain electrode) thereof may be coupled to one end of the light emitting element LD via the sixth transistor T6. A gate electrode of the first transistor T1 may be coupled to the first node N1. The first transistor T1 may control a driving current flowing between the first driving power source VDD and the second driving power source VSS via the light emitting element LD in response to a voltage of the first node N1.

[0301] The second transistor (e.g., a switching transistor) T2 may be coupled between the jth data line Dj coupled to the first sub-pixel SP1 and the source electrode of the first transistor T1. The gate electrode of the second transistor T2 is coupled to the i-th scan line Si coupled to the first sub-pixel SP1. When a scan signal having a gate-on voltage (e.g., a low-level voltage) is supplied from the i-th scan line Si, the second transistor T2 is turned on to electrically couple the jth data line Dj to the source electrode of the first transistor T1. Therefore, if the second transistor T2 is turned on, the data signal supplied from the jth data line Dj may be transmitted to the first transistor T1.

[0302] The third transistor T3 is coupled between the drain electrode of the first transistor T1 and the first node N1. The gate electrode of the third transistor T3 may be coupled to the i-th scan line Si. When a scan signal having a gate-on voltage is supplied from the scan line Si, the third transistor T3 may be turned on to electrically couple the drain electrode of the first transistor T1 to the first node N1. Therefore, when the third transistor T3 is turned on, the first transistor T1 may be connected in the form of a diode.

[0303] The fourth transistor T4 is coupled between the first node N1 and the initialization power supply Vint. The gate electrode of the fourth transistor T4 is coupled to the previous scan line, for example, the i-1th scan line Si-1. When a scan signal of a gate-on voltage is supplied to the i-1th scan line Si-1, the fourth transistor T4 may be turned on so that the voltage of the initialization power supply Vint may be transmitted to the first node N1. Here, the initialization power supply Vint may have a voltage equal to or less than the minimum voltage of the data signal.

[0304] The fifth transistor T5 is coupled between the first driving power source VDD and the first transistor T1. The gate electrode of the fifth transistor T5 may be coupled to a corresponding emission control line, for example, the i-th emission control line Ei. The fifth transistor T5 may be turned off when an emission control signal having a gate-off voltage is supplied to the i-th emission control line Ei, and may be turned on in other cases.

[0305] The sixth transistor T6 is coupled between the first transistor T1 and the first end of the light emitting element LD. The gate electrode of the sixth transistor T6 is coupled to the i-th emission control line Ei. The sixth transistor T6 can be turned off when the emission control signal having the gate-off voltage is supplied to the i-th emission control line Ei, and can be turned on in other cases.

[0306] The seventh transistor T7 is coupled between the first end of the light emitting element LD and the initialization power supply Vint. The gate electrode of the seventh transistor T7 is coupled to any one of the scan lines of the next stage, for example, to the i+1th scan line Si+1. When a scan signal of a gate-on voltage is supplied to the i+1th scan line Si+1, the seventh transistor T7 can be turned on, so that the voltage of the initialization power supply Vint can be supplied to the first end of the light emitting element LD.

[0307] The storage capacitor Cst may be coupled between the first driving power source VDD and the first node N1. The storage capacitor Cst may store a voltage corresponding to both the data signal applied to the first node N1 during each frame period and the threshold voltage of the first transistor T1.

[0308] For convenience, Fig.13cIt is shown that all of the first transistor T1 to the seventh transistor T7 are formed by P-type transistors, but the present disclosure is not limited thereto. For example, at least one of the first transistor T1 to the seventh transistor T7 included in the pixel driving circuit 144 may be formed by an N-type transistor, or all of the first transistor T1 to the seventh transistor T7 may be formed by N-type transistors.

[0309] Fig.14 It is schematically shown that the Fig.12 1 is a plan view of first to third sub-pixels of one of the pixels shown in FIG. 1 . Fig.15a is along Fig.14 A cross-sectional view taken along line VI-VI'.

[0310] In the embodiments of the present disclosure, the following description will focus on the differences from the previous embodiments to avoid repeated description. Components that are not separately described in the following description of the present embodiment are consistent with the components of the previous embodiments. The same reference numerals will be used to represent the same components, and similar reference numerals will be used to represent similar components.

[0311] exist Fig.14 In the embodiment of the present invention, for the sake of illustration, a plurality of light emitting elements provided in each sub-pixel are shown to be arranged horizontally. However, the arrangement of the light emitting elements is not limited thereto. For example, at least some of the light emitting elements may be arranged in a direction intersecting with the horizontal direction.

[0312] In addition, for the sake of illustration, Fig.14 Illustration of a transistor coupled to a light emitting element and a signal line coupled to the transistor is omitted.

[0313] In addition, despite Fig.14 and Fig.15a A simplified structure of the one pixel is shown (eg, each electrode is shown to have only a single electrode layer), but the present disclosure is not limited thereto.

[0314] Reference Figure 1a , Fig.12 , Fig.14 and Fig.15a , a display device according to an embodiment of the present disclosure may include a substrate SUB on which a plurality of pixels PXL are disposed. Each of the pixels PXL may include a first subpixel SP1, a second subpixel SP2, and a third subpixel SP3 disposed on the substrate SUB. In an embodiment of the present disclosure, the first subpixel SP1 may be a red subpixel, the second subpixel SP2 may be a green subpixel, and the third subpixel SP3 may be a blue subpixel.

[0315] The unit emission region 100 of each of the first to third sub-pixels SP1 to SP3 may include a substrate SUB, a pixel circuit layer PCL disposed on the substrate SUB, and a display element layer DPL disposed on the pixel circuit layer PCL.

[0316] In an embodiment of the present disclosure, the unit emission region 100 may include the pixel region of the corresponding sub-pixel. For example, the unit emission region 100 of the first sub-pixel SP1 may include the pixel region of the first sub-pixel SP1. The unit emission region 100 of the second sub-pixel SP2 may include the pixel region of the second sub-pixel SP2. The unit emission region 100 of the third sub-pixel SP3 may include the pixel region of the third sub-pixel SP3.

[0317] The pixel circuit layer PCL of each of the first to third sub-pixels SP1 to SP3 may include a buffer layer BFL disposed on the substrate SUB, a first transistor T1 and a second transistor T2 disposed on the buffer layer BFL, and a driving voltage line DVL. In addition, the pixel circuit layer PCL of each of the first to third sub-pixels SP1 to SP3 may further include a passivation layer PSV disposed on the first transistor T1 and the second transistor T2 and the driving voltage line DVL.

[0318] The substrate SUB may include an insulating material such as glass, an organic polymer, or a crystal. In addition, the substrate SUB may be made of a material having flexibility to be bendable or foldable, and may have a single-layer or multi-layer structure.

[0319] The buffer layer BFL may be disposed on the substrate SUB and may prevent impurities from diffusing into the first transistor T1 and the second transistor T2. The buffer layer BFL may be omitted according to a material or process condition of the substrate SUB.

[0320] The first transistor T1 may be a driving transistor electrically coupled to some light emitting elements LD disposed in the display element layer DPL of a corresponding sub-pixel to drive the light emitting elements LD. The second transistor T2 may be a switching transistor configured to switch the first transistor T1.

[0321] Each of the first and second transistors T1 and T2 may include a semiconductor layer SCL, a gate electrode GE, and source and drain electrodes SE and DE.

[0322] The semiconductor layer SCL may be disposed on the buffer layer BFL. The semiconductor layer SCL may include a source region contacting the source electrode SE and a drain region contacting the drain electrode DE. A region between the source region and the drain region may be a channel region.

[0323] The semiconductor layer SCL may be a semiconductor pattern formed of polysilicon, amorphous silicon, an oxide semiconductor, etc. The channel region may be an intrinsic semiconductor, which is an undoped semiconductor pattern. Each of the source region and the drain region may be a semiconductor pattern doped with impurities.

[0324] The gate electrode GE may be disposed on the semiconductor layer SCL with the gate insulating layer GI interposed therebetween.

[0325] The source electrode SE and the drain electrode DE may respectively contact the source region and the drain region of the semiconductor layer SCL through corresponding contact holes passing through the interlayer insulating layer ILD and the gate insulating layer GI.

[0326] The driving voltage line DVL may be disposed on the interlayer insulating layer ILD, but the present disclosure is not limited thereto. In some embodiments, the driving voltage line DVL may be disposed on any one of the insulating layers included in the pixel circuit layer PCL. The second driving power source ( Fig.13a VSS) may be applied to the driving voltage line DVL.

[0327] The passivation layer PSV may include a first contact hole CH1 exposing a portion of the drain electrode DE of the first transistor T1 and a second contact hole CH2 exposing a portion of the driving voltage line DVL.

[0328] The display element layer DPL of each of the first to third subpixels SP1 to SP3 may include first and second electrodes REL1 and REL2 disposed on the passivation layer PSV, first and second connection lines CNL1 and CNL2 , a plurality of light emitting elements LD, and first and second contact electrodes CNE1 and CNE2 .

[0329] Each light emitting element LD may be formed of a light emitting diode which is made of a material having an inorganic crystal structure and has an ultra-small size corresponding to, for example, a nanometer order or a micrometer order.

[0330] A second insulating layer INS2 for covering a portion of an upper surface of each of the light emitting elements LD may be disposed on the light emitting element LD. A first insulating layer INS1 may be disposed between each of the light emitting elements LD and the passivation layer PSV.

[0331] The third insulating layer INS3 may be disposed on each of the second insulating layer INS2 and the light emitting element LD. The third insulating layer INS3 may planarize a stepped portion formed by the second insulating layer INS2 and the light emitting element LD, and may cover opposite ends EP1 and EP2 of each of the light emitting elements LD exposed outside the second insulating layer INS2.

[0332] The first connection line CNL1 may extend from each of the first to third sub-pixels SP1 to SP3 in the first direction DR1. The first connection line CNL1 may be disposed only in one corresponding sub-pixel to independently drive each of the first to third sub-pixels SP1 to SP3.

[0333] The second connection line CNL2 may extend in a direction parallel to the direction in which the first connection line CNL1 extends. The second connection line CNL2 may be provided in common for the first to third subpixels SP1 to SP3. Therefore, the first to third subpixels SP1 to SP3 may be commonly coupled to the second connection line CNL2.

[0334] The first electrode REL1 may include a 1-1 electrode REL1_1 and a 1-2 electrode REL1_2 branching from the first connection line CNL1 in a second direction DR2 intersecting the first direction DR1. The second electrode REL2 may extend from the second connection line CNL2 in the second direction DR2.

[0335] In an embodiment of the present disclosure, the light emitting element LD may be divided into a plurality of first light emitting elements LD1 aligned between the 1-1 electrode REL1_1 and the second electrode REL2 and a plurality of second light emitting elements LD2 aligned between the second electrode REL2 and the 1-2 electrode REL1_2. In an embodiment of the present disclosure, the first light emitting element LD1 and the second light emitting element LD2 may emit blue light having a relatively short wavelength in a visible ray region.

[0336] In a plan view, the first electrode REL1 and the second electrode REL2 may be disposed on the substrate SUB at positions spaced apart from each other with the light emitting element LD interposed therebetween, and thus electrically and / or physically separated from each other.

[0337] In an embodiment of the present disclosure, the first electrode REL1 may be electrically coupled to the drain electrode DE of the first transistor T1 through the first contact hole CH1 of the passivation layer PSV. Therefore, a signal applied to the first transistor T1 may be transmitted to the first electrode REL1. The first electrode REL1 may be disposed adjacent to one of the opposite ends EP1 and EP2 of each of the light emitting elements LD, and may be electrically coupled to each of the light emitting elements LD through the first contact electrode CNE1. Therefore, a signal of the first transistor T1 applied to the first electrode REL1 may be transmitted to each of the light emitting elements LD through the first contact electrode CNE1.

[0338] The second electrode REL2 may be electrically coupled to the driving voltage line DVL through the second contact hole CH2 of the passivation layer PSV. Therefore, the second driving power VSS applied to the driving voltage line DVL may be transmitted to the second electrode REL2. The second electrode REL2 may be disposed adjacent to the other of the opposite ends of each of the light emitting elements LD, and may be electrically coupled to each of the light emitting elements LD through the second contact electrode CNE2. Therefore, the second driving power VSS applied to the second electrode REL2 may be transmitted to each of the light emitting elements LD.

[0339] The first contact electrode CNE1 and the second contact electrode CNE2 may be disposed at the same plane and may be disposed on the third insulating layer INS3 at positions spaced a predetermined distance apart from each other. Thus, the first contact electrode CNE1 and the second contact electrode CNE2 may be electrically and / or physically separated from each other.

[0340] A fourth insulating layer INS4 may be disposed on the first contact electrode CNE1 and the second contact electrode CNE2. An overcoat layer OC may be disposed on the fourth insulating layer INS4.

[0341] The display element layer DPL of each of the first to third sub-pixels SP1 to SP3 may include a color conversion layer. For example, the display element layer DPL of the first sub-pixel SP1 may include a first color conversion layer CCL1. The display element layer DPL of the second sub-pixel SP2 may include a second color conversion layer CCL2. The display element layer DPL of the third sub-pixel SP3 may include a third color conversion layer CCL3.

[0342] In an embodiment of the present disclosure, the first color conversion layer CCL1 may include red quantum dots QDr as light conversion particles for converting blue light emitted from the light emitting element LD into red light.

[0343] The second color conversion layer CCL2 may include green quantum dots (not shown) as light conversion particles for converting blue light emitted from the light emitting element LD into green light.

[0344] The third color conversion layer CCL3 may include a transparent layer for allowing the blue light emitted from the light emitting element LD to directly pass therethrough in a direction (e.g., a forward direction) in which an image of the display device is displayed. The transparent layer may be formed of a transparent polymer and may directly emit the blue light emitted from the light emitting element LD disposed in the third sub-pixel SP3 in a forward direction. The third color conversion layer CCL3 including the transparent layer may directly emit the blue light incident thereon without having a separate quantum dot. In an embodiment, the third color conversion layer CCL3 may include a blue color filter instead of the transparent layer.

[0345] The first to third subpixels SP1 to SP3 may have substantially the same or similar structures. Hereinafter, for convenience, the first subpixel SP1 among the first to third subpixels SP1 to SP3 will be described as a representative example.

[0346] The first color conversion layer CCL1 may be disposed on the second electrode REL2 between the first light emitting element LD1 and the second light emitting element LD2 in the unit emission region 100 of the first subpixel SP1. The second contact electrode CNE2 may be disposed on the first color conversion layer CCL1.

[0347] In a plan view, the first color conversion layer CCL1 may overlap the second electrode REL2 and the second contact electrode CNE2. In a cross-sectional view, in a case where the first color conversion layer CCL1 is disposed below the second contact electrode CNE2, the second contact electrode CNE2 may overlap the second electrode REL2 on opposite ends of the first color conversion layer CCL1 and thus be electrically and / or physically coupled to the second electrode REL2. However, the present disclosure is not limited thereto, and the first color conversion layer CCL1 may overlap the first contact electrode CNE1.

[0348] As described above, a predetermined voltage may be applied to the opposite ends EP1 and EP2 of each of the first light emitting element LD1 and the second light emitting element LD2 through the first electrode REL1 and the second electrode REL2, respectively. Therefore, each light emitting element LD may emit blue light. The blue light emitted from the opposite ends EP1 and EP2 of each of the first light emitting element LD1 and the second light emitting element LD2 may travel to the first color conversion layer CCL1.

[0349] The red quantum dot QDr is excited by the blue light incident on the first color conversion layer CCL1, so that the blue light can be absorbed and red light can be emitted. The red light emitted from the red quantum dot QDr can be emitted in all directions. The red light finally emitted from the first color conversion layer CCL1 can be reflected in the forward direction of the display device by the first electrode REL1 and the second electrode REL2 disposed under the first color conversion layer CCL1.

[0350] The blue light emitted from each light emitting element LD disposed in the second sub-pixel SP2 may travel to the second color conversion layer CCL2. The green quantum dots are excited by the blue light incident on the second color conversion layer CCL2 so that the blue light may be absorbed and green light may be emitted. The green light emitted from the green quantum dots may be emitted in all directions. The green light finally emitted from the second color conversion layer CCL2 may be reflected in the forward direction of the display device by the first electrode REL1 and the second electrode REL2 disposed under the second color conversion layer CCL2.

[0351] Blue light emitted from each light emitting element LD disposed in the third subpixel SP3 may pass through the transparent layer and be reflected in a forward direction of the display device by the first electrode REL1 and the second electrode REL2 disposed in the third subpixel SP3 .

[0352] Therefore, the display device may display an image corresponding to the red light, the green light, and the blue light respectively emitted from the first to third sub-pixels SP1 to SP3.

[0353] As described above, the display device according to the embodiment of the present disclosure may emit light having excellent color reproducibility through the first to third color conversion layers CCL1 to CCL3 , so that light output efficiency may be enhanced.

[0354] As described above, in the display device according to an embodiment of the present disclosure, the first to third color conversion layers CCL1 to CCL3 may be disposed on the same substrate SUB as the substrate SUB of the light emitting element LD, so that the efficiency of light ultimately emitted from each of the first to third subpixels SP1 to SP3 may be enhanced.

[0355] Fig.15b A display device according to an embodiment of the present disclosure is shown and corresponds to Fig.14 Cross-sectional view along line VI-VI'.

[0356] In addition to the fact that the first color conversion layer is arranged on the second contact electrode, Fig.15b The display device shown in FIG. 1 may have Fig.14 and Fig.15a The display devices have substantially the same or similar constructions.

[0357] Therefore, to avoid redundant explanations, Fig.15b The description of the display device will focus on the differences from the description of the previous embodiment. Components not separately described in the following description of this embodiment are consistent with the components of the previous embodiment. The same reference numerals will be used to represent the same components, and similar reference numerals will be used to represent similar components.

[0358] Reference Figure 1a , Fig.12 , Fig.14 and Fig.15b , first and second connection lines CNL1 and CNL2 , first and second electrodes REL1 and REL2 , first and second contact electrodes CNE1 and CNE2 , and a first color conversion layer CCL1 may be disposed in the unit emission region 100 of the first subpixel SP1 .

[0359] The first electrode REL1 and the second electrode REL2 may be disposed at the same plane and spaced apart from each other by a predetermined distance.

[0360] The first contact electrode CNE1 may be disposed on the first electrode REL1 and may be electrically and / or physically coupled to the first electrode REL1. The second contact electrode CNE2 may be disposed on the second electrode REL2 and may be electrically and / or physically coupled to the second electrode REL2. The first contact electrode CNE1 and the second contact electrode CNE2 may be disposed at the same plane and spaced apart from each other by a predetermined distance.

[0361] The first color conversion layer CCL1 may include red quantum dots QDr for converting blue light emitted from the light emitting element LD into red light. The first color conversion layer CCL1 may be disposed on the second contact electrode CNE2 in the unit emission region 100 of the first sub-pixel SP1, and may overlap the second electrode REL2 and the second contact electrode CNE2. The first color conversion layer CCL1 may be formed and / or disposed on the second contact electrode CNE2 by an exposure method or the like after the first contact electrode CNE1 and the second contact electrode CNE2 are formed on the pixel circuit layer PCL of the first sub-pixel SP1.

[0362] The red light finally emitted from the first color conversion layer CCL1 may be reflected in a forward direction of the display device by the first and second electrodes REL1 and REL2 disposed under the first color conversion layer CCL1 .

[0363] Fig.15c A display device according to an embodiment of the present disclosure is shown and corresponds to Fig.14 Cross-sectional view along line VI-VI'.

[0364] Apart from the fact that the first contact electrode and the second contact electrode are arranged on different layers, Fig.15c The display device shown in FIG. 1 may have Fig.14 and 15a The display devices have substantially the same or similar constructions.

[0365] Therefore, to avoid redundant explanations, Fig.15c The description of the display device will focus on the differences from the description of the previous embodiment. Components not separately described in the following description of this embodiment are consistent with the components of the previous embodiment. The same reference numerals will be used to represent the same components, and similar reference numerals will be used to represent similar components.

[0366] Reference Figure 1a , Fig.12 , Fig.14 and Fig.15c, first and second connection lines CNL1 and CNL2 , first and second electrodes REL1 and REL2 , first and second contact electrodes CNE1 and CNE2 , and a first color conversion layer CCL1 may be disposed in the unit emission region 100 of the first subpixel SP1 .

[0367] The first electrode REL1 and the second electrode REL2 may be disposed at the same plane and may be spaced apart from each other by a predetermined distance.

[0368] The first contact electrode CNE1 may be disposed on one of the opposite ends EP1 and EP2 of each of the first electrode REL1 and the light emitting element LD.

[0369] The third insulating layer INS3 may be disposed on the first contact electrode CNE1. The third insulating layer INS3 may prevent the first contact electrode CNE1 from being exposed to the outside, thus preventing the first contact electrode CNE1 from being corroded.

[0370] The first color conversion layer CCL1 may be formed on the substrate SUB provided with the first contact electrode CNE1 by an exposure method, etc. and / or disposed on the second electrode REL2. In a plan view, the first color conversion layer CCL1 may overlap the second electrode REL2.

[0371] The first color conversion layer CCL1 may include red quantum dots QDr for converting blue light emitted from the light emitting element LD into red light. The red light finally emitted from the first color conversion layer CCL1 may be reflected in a forward direction of the display device by the first and second electrodes REL1 and REL2 disposed under the first color conversion layer CCL1.

[0372] The second contact electrode CNE2 may be disposed on the first color conversion layer CCL1. The second contact electrode CNE2 may be disposed on the second electrode REL2 and the other of the opposite ends EP1 and EP2 of each light emitting element LD. The other end of each of the light emitting elements LD and the second electrode REL2 may be electrically coupled to each other through the second contact electrode CNE2.

[0373] In a cross-sectional view, the second contact electrode CNE2 may overlap the second electrode REL2 on opposite ends of the first color conversion layer CCL1 with the first color conversion layer CCL1 interposed therebetween. The second contact electrode CNE2 may be disposed on a layer different from that of the first contact electrode CNE1.

[0374] Figures 16a to 16h The manufacturing sequence is shown in Fig.15a A cross-sectional view of a method of displaying a device.

[0375] Reference Figure 1a , Fig.12 , Fig.14 , Fig.15a and Fig.16a , a pixel circuit layer PCL is formed on the substrate SUB. The pixel circuit layer PCL may further include a first transistor T1 and a second transistor T2, a driving voltage line DVL, and a passivation layer PSV.

[0376] The passivation layer PSV includes a first contact hole CH1 exposing a portion of the drain electrode DE of the first transistor T1 and a second contact hole CH2 exposing a portion of the driving voltage line DVL.

[0377] Reference Figure 1a , Fig.12 , Fig.14 , Fig.15a , Fig.16a and Fig.16b , first and second electrodes REL1 and REL2 including a conductive material having high reflectivity and first and second connection lines CNL1 and CNL2 are formed on the passivation layer PSV.

[0378] The first electrode REL1 and the second electrode REL2 may be disposed on the passivation layer PSV and may be spaced apart from each other by a predetermined distance.

[0379] The first electrode REL1 may be integrally disposed with the first connection line CNL1 and may be electrically and / or physically coupled with the first connection line CNL1. The first electrode REL1 may be coupled to the drain electrode DE of the first transistor T1 through the first contact hole CH1 of the passivation layer PSV.

[0380] The second electrode REL2 may be integrally provided with the second connection line CNL2 and electrically and / or physically coupled to the second connection line CNL2. The second connection line CNL2 may be coupled to the driving voltage line DVL through the second contact hole CH2 of the passivation layer PSV. Since the second connection line CNL2 is electrically coupled to the second electrode REL2, the second electrode REL2 may be coupled to the driving voltage line DVL.

[0381] Reference Figure 1a , Fig.12 , Fig.14 , Fig.15a and Figures 16a to 16c A first insulating material layer INSM1 is formed on the substrate SUB on which the first and second electrodes REL1 and REL2 are disposed. The first insulating material layer INSM1 may be formed of an inorganic insulating layer including an inorganic material or an organic insulating layer including an organic material.

[0382] Thereafter, corresponding alignment voltages are applied to the first electrode REL1 and the second electrode REL2 through the first connection line CNL1 and the second connection line CNL2, respectively, and an electric field is formed between the first electrode REL1 and the second electrode REL2. In the case where AC power or DC power having a predetermined voltage and period is repeatedly applied to each of the first electrode REL1 and the second electrode REL2 several times through the first connection line CNL1 and the second connection line CNL2, an electric field can be formed between the first electrode REL1 and the second electrode REL2 by the potential difference between the first electrode REL1 and the second electrode REL2.

[0383] While an electric field is formed between the first electrode REL1 and the second electrode REL2, a plurality of light emitting elements LD are supplied to the passivation layer PSV by an inkjet printing method or the like. For example, the light emitting element LD may be supplied to the substrate SUB of the unit emission region 100 by providing a nozzle on the passivation layer PSV and dripping a solvent including the light emitting element LD onto the passivation layer PSV through the nozzle. The solvent may be any one of acetone, water, alcohol, and toluene, but the present disclosure is not limited thereto. For example, the solvent may include a material that can evaporate at room temperature or by heating. In addition, the solvent may be in the form of ink or paste.

[0384] The method of supplying the light emitting element LD onto the substrate SUB is not limited to the aforementioned method. The method of supplying the light emitting element LD may be changed. Subsequently, the solvent may be removed.

[0385] If the light emitting element LD is supplied onto the passivation layer PSV, an electric field formed between the first electrode REL1 and the second electrode REL2 may cause self-alignment of the light emitting element LD. Therefore, the light emitting element LD may be aligned between the first electrode REL1 and the second electrode REL2.

[0386] The light emitting element LD may include a plurality of first light emitting elements LD1 aligned between the 1-1 electrode REL1_1 and the second electrode REL2 and a plurality of second light emitting elements LD2 aligned between the second electrode REL2 and the 1-2 electrode REL1_2 .

[0387] Reference Figure 1a , Fig.12 , Fig.14 , Fig.15a and Figures 16a to 16d After the alignment of the first light emitting element LD1 and the second light emitting element LD2 has been completed, a second insulating material layer (not shown) is formed on the substrate SUB.

[0388] The second insulating layer INS2 is formed by patterning the second insulating material layer using a mask so that opposite ends EP1 and EP2 of each of the first and second light emitting elements LD1 and LD2 and the first and second electrodes REL1 and REL2 are exposed.

[0389] The first insulating layer INS1 may be formed by patterning the first insulating material layer INSM1 together through the aforementioned mask process so that the first insulating layer INS1 is disposed only between the first light emitting element LD1 and the passivation layer PSV and between the second light emitting element LD2 and the passivation layer PSV.

[0390] The first insulating layer INS1 may be disposed under each of the first and second light emitting elements LD1 and LD2 to support each of the first and second light emitting elements LD1 and LD2 and prevent each of the first and second light emitting elements LD1 and LD2 from being removed from the passivation layer PSV.

[0391] Reference Figure 1a , Fig.12 , Fig.14 , Fig.15a and Figures 16a to 16e A third insulating material layer (not shown) is applied to the passivation layer PSV on which the second insulating layer INS2 is disposed. A third insulating layer INS3 for covering the first and second light emitting elements LD1 and LD2 and the second insulating layer INS2 is formed by patterning the third insulating material layer using a mask.

[0392] The third insulating layer INS3 may planarize a stepped portion formed by the second insulating layer INS2 and the first and second light emitting elements LD1 and LD2. The third insulating layer INS3 may include an organic insulating layer formed of an organic material.

[0393] Reference Figure 1a , Fig.12 , Fig.14 , Fig.15a and Figures 16a to 16f , the first color conversion layer CCL1 is formed on the passivation layer PSV on which the third insulating layer INS3 is disposed. The first color conversion layer CCL1 may be formed on the passivation layer PSV by an exposure method using a mask.

[0394] The first color conversion layer CCL1 may be formed on the second electrode REL2 between the first light emitting element LD1 and the second light emitting element LD2. Thus, the first color conversion layer CCL1 and the second electrode REL2 may overlap each other.

[0395] The first color conversion layer CCL1 may include red quantum dots QDr for converting light emitted from the first and second light emitting elements LD1 and LD2 into red light.

[0396] The method of forming the first color conversion layer CCL1 on the passivation layer PSV is not limited to the aforementioned method. The method of forming the first color conversion layer CCL1 may be changed in various ways. In an embodiment, the first color conversion layer CCL1 may be formed on the second electrode REL2 between the first light emitting element LD1 and the second light emitting element LD2 by dropping a flowable substance including red quantum dots QDr in an inkjet printing scheme.

[0397] Reference Figure 1a , Fig.12 , Fig.14 , Fig.15a and Figures 16a to 16g , by applying a conductive layer (not shown) to the entire surface of the passivation layer PSV on which the first color conversion layer CCL1 is disposed, and then patterning the conductive layer using a mask, the first and second contact electrodes CNE1 and CNE2 are formed on the third insulating layer INS3 at positions spaced a predetermined distance from each other.

[0398] The first contact electrode CNE1 may be disposed on the first electrode REL1 and one of opposite ends EP1 and EP2 of each of the first and second light emitting elements LD1 and LD2 .

[0399] The second contact electrode CNE2 may be disposed on the second electrode REL2 and the other of the opposite ends EP1 and EP2 of each of the first and second light emitting elements LD1 and LD2. The second contact electrode CNE2 may be disposed on the first color conversion layer CCL1.

[0400] Reference Figure 1a , Fig.12 , Fig.14 , Fig.15a and Figures 16a to 16h A fourth insulating layer INS4 is formed on the first contact electrode CNE1 and the second contact electrode CNE2.

[0401] The fourth insulating layer INS4 may include an inorganic insulating layer formed of an inorganic material to prevent oxygen, water, etc. from being introduced into the first color conversion layer CCL1 and the first and second light emitting elements LD1 and LD2 .

[0402] An overcoat layer OC may be formed on the fourth insulating layer INS4 .

[0403] Fig.17 A display device according to an embodiment of the present disclosure is shown and corresponds to Fig.14Cross-sectional view along line VI-VI'.

[0404] In addition to the fact that the color filter layer is disposed on the unit emission area of ​​the first sub-pixel, Fig.17 The display device shown in FIG. 1 may have Fig.14 and Fig.15a The display devices have substantially the same or similar constructions.

[0405] Therefore, to avoid redundant explanations, Fig.17 The description of the display device will focus on the differences from the description of the previous embodiment. Components not separately described in the following description of this embodiment are consistent with the components of the previous embodiment. The same reference numerals will be used to represent the same components, and similar reference numerals will be used to represent similar components.

[0406] Reference Figure 1a , Fig.12 , Fig.14 and Fig.17 , a display device according to an embodiment of the present disclosure may include a substrate SUB on which a plurality of pixels PXL are disposed. Each of the pixels PXL may include a first subpixel SP1, a second subpixel SP2, and a third subpixel SP3 disposed on the substrate SUB. In an embodiment of the present disclosure, the first subpixel SP1 may be a red subpixel, the second subpixel SP2 may be a green subpixel, and the third subpixel SP3 may be a blue subpixel.

[0407] The unit emission region 100 of each of the first to third sub-pixels SP1 to SP3 may include a substrate SUB, a pixel circuit layer PCL disposed on the substrate SUB, and a display element layer DPL disposed on the pixel circuit layer PCL.

[0408] The pixel circuit layer PCL of each of the first to third subpixels SP1 to SP3 may include a buffer layer BFL disposed on the substrate SUB, transistors T1 and T2 disposed on the buffer layer BFL, a driving voltage line DVL, and a passivation layer PSV disposed on the transistors T1 and T2 and the driving voltage line DVL.

[0409] The display element layer DPL of each of the first to third subpixels SP1 to SP3 may include a plurality of light emitting elements LD, first and second electrodes REL1 and REL2 , first and second connection lines CNL1 and CNL2 , first and second contact electrodes CNE1 and CNE2 , and a color conversion layer CCL1 , CCL2 , or CCL3 .

[0410] In an embodiment of the present disclosure, a color filter layer CF may be provided on the display element layer DPL of each of the first to third sub-pixels SP1 to SP3. For example, a first color filter layer CF may be provided on the display element layer DPL of the first sub-pixel SP1. A second color filter layer (not shown) may be provided on the display element layer DPL of the second sub-pixel SP2. A third color filter layer (not shown) may be provided on the display element layer DPL of the third sub-pixel SP3.

[0411] In an embodiment of the present disclosure, the first color filter layer CF may cover the first color conversion layer CCL1 disposed on the display element layer DPL of the first subpixel SP1. The first color filter layer CF may include a red color filter that allows only red light finally emitted from the first color conversion layer CCL1 to pass therethrough.

[0412] In an embodiment of the present disclosure, the second color filter layer may cover the second color conversion layer CCL2 disposed on the display element layer DPL of the second subpixel SP2. The second color filter layer may include a green color filter that allows only green light finally emitted from the second color conversion layer CCL2 to pass therethrough.

[0413] In an embodiment of the present disclosure, the third color filter layer may cover the third color conversion layer CCL3 disposed on the display element layer DPL of the third subpixel SP3. The third color filter layer may include a blue color filter that allows only blue light finally emitted from the third color conversion layer CCL3 to pass therethrough.

[0414] Since corresponding color filter layers are respectively formed and / or disposed on the first to third color converting layers CCL1 to CCL3 , efficiency of light finally emitted from each of the first to third color converting layers CCL1 to CCL3 may be enhanced, and colors may be more clearly expressed.

[0415] In addition, the corresponding color filter layer disposed on each of the first to third color conversion layers CCL1 to CCL3 allows only light having a preset wavelength to pass therethrough and blocks light within other wavelength ranges, thereby reducing reflection of external light incident on the first to third subpixels SP1 to SP3.

[0416] In addition, the corresponding color filter layer may be used as a planarization layer for alleviating a step portion formed by the display element layer DPL. In this case, the overcoat layer OC may be omitted from the display device.

[0417] Fig.18 A display device according to an embodiment of the present disclosure is shown and corresponds to Fig.14 Cross-sectional view along line VI-VI'.

[0418] In addition to the fact that the color filter layer and the shielding layer located below the color filter layer are disposed on the unit emission area of ​​the first sub-pixel, Fig.18 The display device shown in FIG. 1 may have a Fig.14 and Fig.17 The display devices have substantially the same or similar constructions.

[0419] Therefore, to avoid redundant explanations, Fig.18 The description of the display device will focus on the differences from the description of the previous embodiment. Components not separately described in the following description of this embodiment are consistent with the components of the previous embodiment. The same reference numerals will be used to represent the same components, and similar reference numerals will be used to represent similar components.

[0420] Reference Figure 1a , Fig.12 , Fig.14 and Fig.18 , the display device according to the embodiment of the present disclosure may include a substrate SUB on which a plurality of pixels PXL are disposed. Each of the pixels PXL may include a first sub-pixel SP1, a second sub-pixel SP2, and a third sub-pixel SP3 disposed on the substrate SUB.

[0421] The unit emission region 100 of each of the first to third sub-pixels SP1 to SP3 may include a substrate SUB, a pixel circuit layer PCL disposed on the substrate SUB, and a display element layer DPL disposed on the pixel circuit layer PCL.

[0422] In an embodiment of the present disclosure, a shielding layer SDL and a color filter layer CF may be disposed on the display element layer DPL of each of the first to third sub-pixels SP1 to SP3 .

[0423] The shielding layer SDL may be disposed on the fourth insulating layer INS4 so that the shielding layer SDL corresponds to the upper surface of each light emitting element LD in the unit emission region 100 of each of the first to third sub-pixels SP1 to SP3. The shielding layer SDL may include a black matrix and may absorb light traveling toward the upper surface of the light emitting element LD from among the light emitted from the light emitting element LD, thereby preventing the color purity of light finally emitted from each of the first to third sub-pixels SP1 to SP3 from being degraded.

[0424] In addition, the shielding layer SDL may absorb light incident on each of the first to third sub-pixels SP1 to SP3 from the outside, thus reducing reflection of external light of the display device.

[0425] The color filter layer CF may be disposed on the shielding layer SDL and the fourth insulating layer INS4 such that the color filter layer CF corresponds to a position above the color conversion layer CCL1 , CCL2 , or CCL3 of each of the first to third subpixels SP1 to SP3 .

[0426] If a corresponding color filter layer is disposed above the color conversion layer CCL1, CCL2 or CCL3 of each of the first to third subpixels SP1 to SP3, the efficiency of light ultimately emitted from the color conversion layer CCL1, CCL2 or CCL3 of each of the first to third subpixels SP1 to SP3 can be enhanced, and the color can be more clearly expressed.

[0427] Although various exemplary embodiments have been described above, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the present disclosure.

[0428] Therefore, the embodiments disclosed in this specification are only for illustrative purposes, rather than limiting the technical spirit of the present disclosure. The scope of the present disclosure must be defined by the appended claims.

Claims

1. A light-emitting device, the light-emitting device include: substrate; at least one light emitting element disposed on the substrate and configured to emit light; A first electrode and a second electrode, which are separated from each other by a predetermined distance and the light emitting element is disposed between the first electrode and the second electrode; a color conversion layer located on the substrate and configured to convert light emitted from the light emitting element into light having a specific color; a first contact electrode configured to electrically couple the first electrode to a first end of the light emitting element; and a second contact electrode configured to electrically couple the second electrode to the second end of the light emitting element, wherein, in a plan view, the color conversion layer is separated from the light emitting element by a predetermined distance and overlaps with the second contact electrode, wherein the color conversion layer is located on the second electrode and overlaps with the second electrode, and Wherein, the second contact electrode is located on the color conversion layer.

2. The light emitting device according to claim 1, in, The color conversion layer includes quantum dots.

3. The light emitting device according to claim 1, further comprising: include: a first connecting line extending in one direction and electrically connected to the first electrode; as well as a second connecting line extending parallel to the direction along which the first connecting line extends and electrically connected to the second electrode, wherein the second electrode includes a 2-1 electrode and a 2-2 electrode branched from the second connection line and spaced apart from each other by a predetermined distance, and Wherein, the color conversion layer is located on the substrate between the 2-1 electrode and the 2-2 electrode. 4 . The light emitting device according to claim 1 , further comprising a dummy electrode disposed between the substrate and the color conversion layer.

5. The light emitting device according to claim 1, further comprising: include: a cover insulating layer, located on the color conversion layer; as well as A light blocking pattern is located on the cover insulating layer, and the light blocking pattern corresponds to the light emitting element.

6. The light emitting device according to claim 5, in, The light blocking pattern includes a black matrix, and the cover insulating layer includes an inorganic insulating layer. 7 . The light emitting device according to claim 5 , further comprising an auxiliary pattern located between the cover insulating layer and the light blocking pattern, the auxiliary pattern corresponding to the light emitting element.

8. The light emitting device according to claim 1, further comprising: include: A first insulating layer, disposed between the substrate and the light emitting element; a second insulating layer disposed on the light emitting element and exposing opposite ends of the light emitting element; as well as The third insulating layer is disposed on the second insulating layer and covers the light emitting element.

9. The light emitting device according to claim 8, in, The first contact electrode and the second contact electrode are located on the third insulating layer and are spaced apart from each other by a predetermined distance.

10. The light emitting device according to claim 8, in, The first contact electrode and the second contact electrode are located at different layers.

11. The light emitting device according to claim 1, in, The light emitting element includes a light emitting diode having a cylindrical or polygonal column shape and having a size of micrometer or nanometer order.

12. A display device, the display device include: A substrate, including a display area and a non-display area; as well as a plurality of pixels disposed in the display area of ​​the substrate, each of the plurality of pixels comprising a plurality of sub-pixels, Each of the plurality of sub-pixels includes: a pixel circuit layer including at least one transistor; and a display element layer including a unit emission region through which light is emitted. Wherein, the display element layer comprises: at least one light emitting element disposed on the pixel circuit layer and configured to emit light; A first electrode and a second electrode, which are separated from each other by a predetermined distance and the light emitting element is disposed between the first electrode and the second electrode; a color conversion layer located on the substrate and configured to convert light emitted from the light emitting element into light having a specific color; a first contact electrode configured to electrically couple the first electrode to a first end of the light emitting element; and a second contact electrode configured to electrically couple the second electrode to the second end of the light emitting element, and wherein, in a plan view, the color conversion layer is separated from the light emitting element by a predetermined distance and overlaps with the second contact electrode, wherein the color conversion layer is located on the second electrode and overlaps with the second electrode, and Wherein, the second contact electrode is located on the color conversion layer.

13. The display device according to claim 12, in, The color conversion layer includes quantum dots.

14. The display device according to claim 13, wherein the display device further comprises: include: A first insulating layer, disposed between the pixel circuit layer and the light emitting element; a second insulating layer disposed on the light emitting element and exposing opposite ends of the light emitting element; a third insulating layer, disposed on the second insulating layer and covering the light emitting element; as well as a fourth insulating layer, disposed on the third insulating layer, The first contact electrode and the second contact electrode are located on the third insulating layer and are separated from each other by a predetermined distance.

15. The display device according to claim 14, in, The display element layer also includes a color filter layer located on the color conversion layer.

16. The display device according to claim 15, in, The display element layer further includes a light blocking pattern, the light blocking pattern being located between the fourth insulating layer and the color filter layer, the light blocking pattern corresponding to the light emitting element.

Images