Light emitting diode structure and manufacturing method

Abstract

The invention relates to a light emitting diode structure and a manufacturing method. The solar cell comprises a substrate, a back reflector, a buffer layer, a first semiconductor layer, an active layer and a second semiconductor layer, a Mesa structure extending to the first semiconductor layer is arranged along the second semiconductor layer, and the Mesa structure comprises a step surface and a groove which enable part of the first semiconductor layer to be exposed; the transparent conducting layer is arranged on the second semiconductor layer; the current blocking layer comprises a first insulating layer I and a first insulating layer II; the first bonding pad partially penetrates through the transparent conductive layer and the first insulating layer and is respectively contacted with the transparent conductive layer, the first insulating layer and the second semiconductor layer, and the second bonding pad partially contacts with the bottom wall of the groove; the second insulating layer is at least partially arranged on the transparent conductive layer; and the plurality of micro-disc resonant cavity structures are distributed on the surface of the second insulating layer and are in contact with the surface of the transparent conductive layer through the micropores. By introducing the micro-disc resonant cavity structure, the optical coupling efficiency and the light extraction efficiency are remarkably improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a light emitting diode structure and a manufacturing method thereof. Background Art

[0002] Light-emitting diodes (LEDs) have been widely used in lighting, display, communication and other fields due to their advantages such as high efficiency, energy saving, long life and environmental protection. With the continuous growth of market demand, higher requirements are put forward for the performance of LEDs, especially in terms of light efficiency and energy efficiency. Improving the light output efficiency of LEDs can not only reduce energy consumption, but also enhance its competitiveness in various applications.

[0003] The light output efficiency of LED is mainly determined by two parts: internal quantum efficiency and light extraction efficiency. Internal quantum efficiency involves the efficiency of carrier injection and photon generation, while light extraction efficiency involves the efficiency of photon transmission from the inside of the LED chip to the external environment. At present, despite significant progress in internal quantum efficiency, light extraction efficiency is still one of the key bottlenecks limiting the overall light output efficiency of LEDs. The existing LED light coupling structure has limited efficiency improvement effect within a specific wavelength range, and it is difficult to meet the demand for efficient light output. In addition, some optimization methods require complex manufacturing processes, which increases production costs and process difficulty, and is not conducive to large-scale mass production. Summary of the invention

[0004] To this end, the present invention provides a light emitting diode structure and a manufacturing method, which significantly improves the light coupling efficiency and light extraction efficiency by introducing a micro-disk resonant cavity structure.

[0005] In order to solve the above technical problems, the present invention provides a light emitting diode structure, comprising:

[0006] substrate;

[0007] A back reflector, disposed on the back side of the substrate;

[0008] An epitaxial structure, comprising a buffer layer, a first semiconductor layer, an active layer, and a second semiconductor layer sequentially arranged along the front surface of the substrate; wherein a Mesa structure extending to the first semiconductor layer is arranged along the second semiconductor layer, and the Mesa structure comprises a step surface and a groove that expose a portion of the first semiconductor layer;

[0009] A transparent conductive layer, disposed on the second semiconductor layer;

[0010] A current blocking layer, comprising a first insulating layer 1 disposed on a portion of the surface of the second semiconductor layer and a first insulating layer 2 disposed on a bottom wall of the groove;

[0011] a first pad and a second pad, wherein the first pad partially penetrates the transparent conductive layer and the first insulating layer 1 and contacts the transparent conductive layer, the first insulating layer 1 and the second semiconductor layer respectively, and the second pad is disposed above the first insulating layer 2 and partially contacts the bottom wall of the groove;

[0012] A second insulating layer, at least partially disposed on the transparent conductive layer, wherein the second insulating layer is provided with micropores extending to the surface of the transparent conductive layer;

[0013] A plurality of micro-disk resonant cavity structures are distributed on the surface of the second insulating layer and contact the surface of the transparent conductive layer through the micro-holes, wherein the refractive index of the transparent conductive layer and the micro-disk resonant cavity structures are greater than that of the second insulating layer.

[0014] In one embodiment of the present invention, the refractive index of the transparent conductive layer is 2.0-2.1; the refractive index of the micro-disk resonant cavity structure is 1.9-2.5; and the refractive index of the second insulating layer is 1.4-1.6.

[0015] In one embodiment of the present invention, the material of the micro-disk resonant cavity structure includes ITO (ie, InSnO), Al2O3, Nb2O5 or HfO2.

[0016] In one embodiment of the present invention, the current blocking layer and the second insulating layer are both made of SiO2.

[0017] In one embodiment of the present invention, the material of the transparent conductive layer is ITO (ie, InSnO).

[0018] In one embodiment of the present invention, the aperture of the micropore is 2-10 um; the width of the microdisk resonant cavity structure is 20-50 um; the thickness of the microdisk resonant cavity structure is 10-50 nm; and the distance between two adjacent microdisk resonant cavity structures is 20-50 um.

[0019] In one embodiment of the present invention, the shape of the micro-disk resonant cavity structure includes a circle or a triangle;

[0020] The plurality of micro-disk resonant cavity structures are linearly distributed in the lateral and longitudinal directions of the light-emitting diode structure;

[0021] Wherein, when the shape of the micro-disk resonant cavity structure is circular, a plurality of the micro-disk resonant cavity structures are symmetrically distributed along the symmetrical longitudinal section of the light-emitting diode structure;

[0022] When the shape of the micro-disk resonant cavity structure is a triangle, the tips of all triangles face the same direction, or the tips of every two rows of triangles on both sides of the symmetrical longitudinal section of the light-emitting diode structure face each other.

[0023] In one embodiment of the present invention, the second insulating layer covers the surface of the transparent conductive layer, the step surface and the surface exposed by the groove; or, the second insulating layer is respectively arranged under each of the micro-disk resonant cavity structures, and a step is left at the edge of each second insulating layer.

[0024] In one embodiment of the present invention, metal nanoparticles are disposed on the bottom wall and the side wall of the micropores. The size of the metal nanoparticles is 0.5-5 nm, and the metal nanoparticles are metals with a resonance peak in the visible light range.

[0025] The present invention also provides a method for manufacturing a light emitting diode structure, comprising:

[0026] providing a substrate;

[0027] Fabricating an epitaxial structure on the front side of the substrate, including a buffer layer, a first semiconductor layer, an active layer, and a second semiconductor layer grown in sequence;

[0028] Etching a Mesa structure on the epitaxial structure to expose a portion of the first semiconductor layer, wherein the Mesa structure includes a step surface and a groove;

[0029] Manufacturing a current blocking layer, including manufacturing a first insulating layer 1 on a portion of the second semiconductor layer surface and manufacturing a first insulating layer 2 on the bottom wall of the groove;

[0030] forming a transparent conductive layer on the second semiconductor layer;

[0031] A second insulating layer is formed on the transparent conductive layer, and micropores extending to the surface of the transparent conductive layer are formed on the second insulating layer;

[0032] Depositing oxide by sputtering and then patterning to form a micro-disk resonant cavity structure, wherein a plurality of the micro-disk resonant cavity structures are distributed on the surface of the second insulating layer and contact the surface of the transparent conductive layer through the micropores;

[0033] A pad area is provided on the second insulating layer, and a first pad and a second pad are formed correspondingly, wherein the first pad partially penetrates the transparent conductive layer and the first insulating layer 1 and contacts the transparent conductive layer, the first insulating layer 1 and the second semiconductor layer respectively, and the second pad is provided above the first insulating layer 2 and partially contacts the bottom wall of the groove;

[0034] Performing a thinning process on the substrate and manufacturing a back reflector on the back side of the substrate;

[0035] Cut to form individual components.

[0036] The above technical solution of the present invention has the following advantages compared with the prior art:

[0037] The light-emitting diode structure and manufacturing method described in the present invention can effectively enhance the coupling of photons in the light-emitting area by setting a micro-disk resonant cavity structure, thereby improving the internal quantum efficiency and the overall light output efficiency; by rationally designing the refractive index matching and structural shape of the resonant cavity, the internal reflection and absorption of light are minimized, and the light extraction efficiency is significantly improved. The material selection of the micro-disk resonant cavity structure is flexible (such as ITO, Al2O3, Nb2O5 or HfO2), and the optical performance can be optimized according to specific needs, further improving the performance of the LED.

[0038] The light emitting diode structure of the present invention adopts conventional semiconductor technology during the manufacturing process, thus avoiding complicated process steps, reducing production costs and process difficulty, and facilitating large-scale mass production.

[0039] The present invention adopts SiO2 as the current blocking layer and the insulating layer material, thereby ensuring the stability and reliability of the LED structure and extending the life of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] In order to make the contents of the present invention more clearly understood, the present invention is further described in detail below based on specific embodiments of the present invention in conjunction with the accompanying drawings.

[0041] Figure 1 It is a schematic diagram of the main structure of the light emitting diode in Example 1 of the present invention.

[0042] Figure 2 It is a schematic diagram of the top view structure of the light emitting diode in Example 1 of the present invention.

[0043] Figure 3 It is a distribution diagram of the micro-disk resonant cavity structure in Example 2 of the present invention.

[0044] Figure 4 It is a distribution diagram of the micro-disk resonant cavity structure in Example 3 of the present invention.

[0045] Figure 5 Schematic diagram of another distribution of the micro-disk resonant cavity structure in Example 3 of the present invention.

[0046] Figure 6 It is a schematic diagram of the structure of the light emitting diode in Example 4 of the present invention.

[0047] Figure 7It is a schematic diagram of the structure of the light emitting diode in Example 5 of the present invention.

[0048] Figure 8 yes Figure 7 A partial enlarged schematic diagram of .

[0049] Description of the Figures in the Specification:

[0050] 1. Substrate;

[0051] 21. Buffer layer; 22. First semiconductor layer; 23. Active layer; 24. Second semiconductor layer; 25. Step surface; 26. Groove; 27. Back reflector;

[0052] 3. Transparent conductive layer;

[0053] 41. first insulating layer 1; 42. first insulating layer 2;

[0054] 51. first pad; 52. second pad;

[0055] 6. Second insulation layer;

[0056] 7. Microdisk resonant cavity structure;

[0057] 8. Metal nanoparticles. DETAILED DESCRIPTION

[0058] The present invention is further described below in conjunction with the accompanying drawings and specific embodiments so that those skilled in the art can better understand the present invention and implement it, but the embodiments are not intended to limit the present invention.

[0059] In the present invention, if directions (up, down, left, right, front and back) are described, it is only for the convenience of describing the technical solution of the present invention, and does not indicate or imply that the technical features referred to must have a specific orientation, be constructed and operate in a specific orientation. Therefore, it cannot be understood as a limitation of the present invention.

[0060] In the present invention, "several" means one or more, "multiple" means more than two, "greater than", "less than", "exceed" and the like are understood to exclude the number itself; "above", "below", "within" and the like are understood to include the number itself. In the description of the present invention, if there is a description of "first" or "second", it is only used for the purpose of distinguishing technical features, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0061] In the present invention, unless otherwise clearly defined, the words "set", "install", "connect" and the like should be understood in a broad sense, for example, they can be directly connected or indirectly connected through an intermediate medium; they can be fixedly connected or detachably connected or integrally formed; they can be mechanically connected or electrically connected or able to communicate with each other; they can be the internal connection of two elements or the interaction relationship between two elements. Those skilled in the art can reasonably determine the specific meanings of the above words in the present invention in combination with the specific content of the technical solution.

[0062] Example 1

[0063] Reference Figure 1 , Figure 2 As shown, a light emitting diode structure of this embodiment includes:

[0064] Substrate 1;

[0065] A back reflector 27, disposed on the back side of the substrate 1;

[0066] An epitaxial structure, comprising a buffer layer 21, a first semiconductor layer 22, an active layer 23 and a second semiconductor layer 24 arranged in sequence along the front surface of the substrate 1; wherein a Mesa structure extending to the first semiconductor layer 22 is arranged along the second semiconductor layer 24, and the Mesa structure comprises a step surface 25 and a groove 26 for exposing a portion of the first semiconductor layer 22;

[0067] A transparent conductive layer 3 is disposed on the second semiconductor layer 24;

[0068] A current blocking layer, comprising a first insulating layer 1 41 disposed on a portion of the surface of the second semiconductor layer 24 and a first insulating layer 2 42 disposed on the bottom wall of the groove 26;

[0069] A first pad 51 and a second pad 52 (positive and negative pads), wherein the first pad 51 partially penetrates the transparent conductive layer 3 and the first insulating layer 1 41 and contacts the transparent conductive layer 3, the first insulating layer 1 41 and the second semiconductor layer 24 respectively, and the second pad 52 is disposed above the first insulating layer 2 42 and partially contacts the bottom wall of the groove 26;

[0070] A second insulating layer 6 is at least partially disposed on the transparent conductive layer 3, wherein the second insulating layer 6 is provided with micropores extending to the surface of the transparent conductive layer 3;

[0071] A plurality of micro-disk resonant cavity structures 7 are distributed on the surface of the second insulating layer 6 and contact the surface of the transparent conductive layer 3 through the micropores, wherein the refractive indexes of the transparent conductive layer 3 and the micro-disk resonant cavity structures 7 are both greater than those of the second insulating layer 6 .

[0072] Specifically, the refractive index of the transparent conductive layer 3 is between 2.0 and 2.1; the refractive index of the micro-disk resonant cavity structure 7 is between 1.9 and 2.5; and the refractive index of the second insulating layer 6 is between 1.4 and 1.6.

[0073] Specifically, the material of the micro-disk resonant cavity structure 7 includes ITO (ie, InSnO), Al2O3, Nb2O5 or HfO2.

[0074] The current blocking layer and the second insulating layer 6 are both made of SiO2.

[0075] The material of the transparent conductive layer 3 is ITO (ie, InSnO).

[0076] Specifically, the pore size L of the micropores S The width dimension L of the micro-disk resonant cavity structure 7 is 2 to 10 μm. d The thickness of the micro-disk resonant cavity structure 7 is between 20 and 50 um; the thickness of the micro-disk resonant cavity structure 7 is between 10 and 50 nm; and the distance between two adjacent micro-disk resonant cavity structures 7 is between 20 and 50 um.

[0077] Specifically, the second insulating layer 6 covers the surface of the transparent conductive layer 3 , the step surface 25 , and the exposed surface of the groove 26 .

[0078] In this embodiment, the first pad 51 and the second pad 52 are made of metal, such as aluminum (Al) or gold (Au); the substrate 1 is made of sapphire; the buffer layer 21 is made of undoped gallium nitride (u-GaN); the first semiconductor layer 22 is made of n-type gallium nitride (n-GaN); the active layer 23 is a multiple quantum well (MQW); the second semiconductor layer 24 is made of p-type gallium nitride (p-GaN); the back reflector 27 is a distributed Bragg reflector (DBR), which is usually an alternating stack of high refractive index and low refractive index materials, such as silicon dioxide (SiO2) and silicon nitride (Si3N4).

[0079] The reasonable configuration of the high refractive index transparent conductive layer 3 and the micro-disk resonant cavity structure 7 enhances the coupling of light in the resonant cavity area and significantly improves the overall light extraction efficiency. The refractive index combination of the transparent conductive layer 3 (ITO), the micro-disk resonant cavity material (such as Al2O3) and the insulating layer (SiO2) effectively reduces the reflection loss of light and improves the light transmission efficiency.

[0080] Example 2

[0081] Reference Figure 3As shown, this embodiment provides a light-emitting diode structure. Compared with Embodiment 1, the shape of the micro-disk resonant cavity in the light-emitting diode structure is circular, and the multiple micro-disk resonant cavity structures 7 are linearly distributed in the horizontal and vertical directions of the light-emitting diode structure; the multiple micro-disk resonant cavity structures 7 are symmetrically distributed along the symmetrical longitudinal section of the light-emitting diode structure.

[0082] The symmetry of the circular resonant cavity helps to evenly distribute the light field, reduce the unevenness of the light spot, and improve the light quality of display and lighting applications. The linear distribution of the resonant cavity helps to evenly distribute the heat, improve the heat dissipation performance of the LED, and extend the life of the device.

[0083] The rest of the structure is the same as that of Example 1.

[0084] Example 3

[0085] Reference Figure 4 As shown, this embodiment provides a light emitting diode structure. Compared with Embodiment 1, the shape of the micro-disk resonant cavity in the light emitting diode structure is a triangle, and the tips of all triangles face the same direction.

[0086] Or, refer to Figure 5 As shown, the tips of each two rows of triangles on both sides of the symmetrical longitudinal section of the light emitting diode structure are opposite to each other. Such an arrangement is conducive to the concentration of light in the central area, improves the focusing ability of light output, and improves the brightness and efficiency of the LED in a specific area.

[0087] The rest of the structure is the same as that of Example 1.

[0088] Example 4

[0089] Reference Figure 6 As shown, this embodiment provides a light-emitting diode structure. Compared with Embodiment 1, in this light-emitting diode structure, the second insulating layer 6 is respectively arranged under each of the micro-disk resonant cavity structures 7, and a step is left at the edge of each of the second insulating layers 6. The above arrangement effectively reduces the absorption of SiO2 and further improves the light extraction efficiency.

[0090] The rest of the structure is the same as that of Example 1.

[0091] Example 5

[0092] Reference Figure 7 , Figure 8 As shown, this embodiment provides a light-emitting diode structure. Compared with Embodiment 1, the bottom wall and side wall of the micropores in the light-emitting diode structure are provided with metal nanoparticles 8, the size of the metal nanoparticles 8 is 0.5-5 nm, and the metal nanoparticles 8 are metals with resonance peaks in the visible light range, such as Al, Ag, Pt and other metals. The rest of the structure is the same as that of Embodiment 1.

[0093] When making the micropores of the second insulating layer 6, metal nanoparticles 8 are made in the micropores by self-assembly. The metal nanoparticles 8 act as resonant couplers and utilize the localized surface plasmon effect to further enhance the coupling efficiency between photons and the resonant cavity, thereby significantly improving the light extraction efficiency.

[0094] Example 6

[0095] This embodiment provides a method for manufacturing a light emitting diode structure, comprising:

[0096] S1, providing a substrate 1, such as sapphire;

[0097] S2, fabricating an epitaxial structure on the front side of the substrate 1, comprising a buffer layer 21, a first semiconductor layer 22, an active layer 23, and a second semiconductor layer 24 grown in sequence by chemical vapor deposition (MOCVD); wherein the buffer layer 21 is made of undoped gallium nitride (u-GaN); the first semiconductor layer 22 is made of n-type gallium nitride (n-GaN); the active layer 23 is a multiple quantum well (MQW); and the second semiconductor layer 24 is made of p-type gallium nitride (p-GaN);

[0098] S3, etching (such as reactive ion etching or wet etching) a Mesa structure on the epitaxial structure and exposing a portion of the first semiconductor layer 22 to define a light-emitting area and a current channel of the LED; the Mesa structure includes a step surface 25 and a groove 26;

[0099] S4, forming a current blocking layer, including forming a first insulating layer 1 41 on a portion of the surface of the second semiconductor layer 24 and forming a first insulating layer 2 42 on the bottom wall of the groove 26;

[0100] S5, forming a transparent conductive layer 3 on the second semiconductor layer 24; the material of the transparent conductive layer 3 is ITO;

[0101] S6, forming a second insulating layer 6 on the transparent conductive layer 3, and opening micropores on the second insulating layer 6 extending to the surface of the transparent conductive layer 3; wherein step S6 may also include forming metal nanoparticles 8 in the micropores by self-assembly, the metal nanoparticles 8 are distributed on the bottom wall and side wall of the micropores, the size of the metal nanoparticles 8 is 0.5 to 5 nm, and the metal nanoparticles 8 are metals with resonance peaks in the visible light range, such as Al, Ag and other metals; by chemical reduction or physical adsorption, metal atoms or molecules are self-assembled in the micropores to form nanoparticles.

[0102] S7. Deposit a high refractive index oxide (ITO, Al2O3, Nb2O5 or HfO2) by sputtering and then pattern it to form a microdisk resonant cavity structure 7. High vacuum magnetron sputtering equipment can be used to ensure high-quality thin film deposition. Coat photoresist on the high refractive index oxide layer and transfer the pattern of the microdisk resonant cavity by photolithography. Use reactive ion etching (RIE) or plasma etching technology to accurately etch the resonant cavity structure in the shape of a microdisk.

[0103] When ITO is used, after sputtering deposition, a high temperature alloy is required to form a transparent conductive film; wherein a plurality of the micro-disk resonant cavity structures 7 are distributed on the surface of the second insulating layer 6 and contact the surface of the transparent conductive layer 3 through the micropores;

[0104] S8, a pad area is formed on the second insulating layer 6, and a first pad 51 and a second pad 52 are formed correspondingly, wherein the first pad 51 partially penetrates the transparent conductive layer 3 and the first insulating layer 1 41 and contacts the transparent conductive layer 3, the first insulating layer 1 41 and the second semiconductor layer 24 respectively, and the second pad 52 is disposed above the first insulating layer 2 42 and partially contacts the bottom wall of the groove 26;

[0105] S9, performing a thinning process (mechanical grinding and chemical mechanical polishing) on ​​the substrate 1, and manufacturing a back reflector 27 (DBR) on the back side of the substrate 1 to improve the light reflectivity and light output efficiency.

[0106] S10, cutting into independent LED components, and final packaging and testing.

[0107] Finally, it should be noted that the above specific implementation methods are only used to illustrate the technical solution of the present invention rather than to limit it. Although the present invention has been described in detail with reference to examples, those skilled in the art should understand that the technical solution of the present invention can be modified or replaced by equivalents without departing from the spirit and scope of the technical solution of the present invention, which should be included in the scope of the claims of the present invention.

Claims

1. A light emitting diode structure, characterized in that: include: Substrate (1); A back reflector (27) arranged on the back side of the substrate (1); An epitaxial structure, comprising a buffer layer (21), a first semiconductor layer (22), an active layer (23) and a second semiconductor layer (24) arranged in sequence along the front surface of the substrate (1); wherein a Mesa structure extending to the first semiconductor layer (22) is arranged along the second semiconductor layer (24), and the Mesa structure comprises a step surface (25) and a groove (26) for exposing a portion of the first semiconductor layer (22); A transparent conductive layer (3) disposed on the second semiconductor layer (24); A current blocking layer, comprising a first insulating layer 1 (41) disposed on a portion of the surface of the second semiconductor layer (24) and a first insulating layer 2 (42) disposed on the bottom wall of the groove (26); a first solder pad (51) and a second solder pad (52), wherein the first solder pad (51) partially penetrates the transparent conductive layer (3) and the first insulating layer (41) and contacts the transparent conductive layer (3), the first insulating layer (41) and the second semiconductor layer (24) respectively, and the second solder pad (52) is arranged above the first insulating layer (42) and partially contacts the bottom wall of the groove (26); A second insulating layer (6) is at least partially disposed on the transparent conductive layer (3), wherein the second insulating layer (6) is provided with micropores extending to the surface of the transparent conductive layer (3); A plurality of micro-disk resonant cavity structures (7) are distributed on the surface of the second insulating layer (6) and contact the surface of the transparent conductive layer (3) through the micro-holes, wherein the refractive index of the transparent conductive layer (3) and the micro-disk resonant cavity structures (7) are both greater than that of the second insulating layer (6).

2. A light emitting diode structure according to claim 1, characterized in that: The refractive index of the transparent conductive layer (3) is between 2.0 and 2.1; the refractive index of the micro-disk resonant cavity structure (7) is between 1.9 and 2.5; and the refractive index of the second insulating layer (6) is between 1.4 and 1.

6.

3. The light emitting diode structure according to claim 1, characterized in that: The material of the micro-disk resonant cavity structure (7) includes ITO, Al2O3, Nb2O5 or HfO2.

4. The light emitting diode structure according to claim 1, characterized in that: The current blocking layer and the second insulating layer (6) are both made of SiO2.

5. The light emitting diode structure according to claim 1, characterized in that: The material of the transparent conductive layer (3) is ITO.

6. The light emitting diode structure according to claim 1, characterized in that: The aperture of the micropore is 2-10 um; the width of the microdisk resonant cavity structure (7) is 20-50 um; the thickness of the microdisk resonant cavity structure (7) is 10-50 nm; and the distance between two adjacent microdisk resonant cavity structures (7) is 20-50 um.

7. The light emitting diode structure according to claim 1, characterized in that: The shape of the micro-disk resonant cavity structure (7) includes a circle or a triangle; The plurality of micro-disk resonant cavity structures (7) are linearly distributed in the lateral and longitudinal directions of the light-emitting diode structure; Wherein, when the shape of the micro-disk resonant cavity structure (7) is circular, a plurality of the micro-disk resonant cavity structures (7) are symmetrically distributed along the symmetrical longitudinal section of the light-emitting diode structure; When the shape of the micro-disk resonant cavity structure (7) is a triangle, the tips of all the triangles face the same direction, or the tips of every two rows of triangles on both sides of the symmetrical longitudinal section of the light-emitting diode structure face each other.

8. The light emitting diode structure according to claim 1, characterized in that: The second insulating layer (6) covers the surface of the transparent conductive layer (3), the step surface (25) and the surface exposed by the groove (26); or, the second insulating layer (6) is respectively arranged under each of the micro-disk resonant cavity structures (7), and a step is left at the edge of each of the second insulating layers (6).

9. The light emitting diode structure according to claim 1, characterized in that: The bottom wall and the side wall of the micropore are provided with metal nanoparticles (8), the size of the metal nanoparticles (8) is 0.5-5 nm, and the metal nanoparticles (8) are metals with a resonance peak in the visible light range.

10. A method for manufacturing a light emitting diode structure, characterized in that: include: Providing a substrate (1); An epitaxial structure is fabricated on the front side of the substrate (1), comprising a buffer layer (21), a first semiconductor layer (22), an active layer (23) and a second semiconductor layer (24) grown in sequence; Etching a Mesa structure on the epitaxial structure to expose a portion of the first semiconductor layer (22), wherein the Mesa structure comprises a step surface (25) and a groove (26); Manufacturing a current blocking layer, comprising manufacturing a first insulating layer 1 (41) on a portion of the surface of the second semiconductor layer (24) and manufacturing a first insulating layer 2 (42) on the bottom wall of the groove (26); Fabricating a transparent conductive layer (3) on the second semiconductor layer (24); A second insulating layer (6) is formed on the transparent conductive layer (3), and micropores extending to the surface of the transparent conductive layer (3) are formed on the second insulating layer (6); Depositing oxide by sputtering and then patterning to form a micro-disk resonant cavity structure (7), wherein a plurality of the micro-disk resonant cavity structures (7) are distributed on the surface of the second insulating layer (6) and contact the surface of the transparent conductive layer (3) through the micropores; A pad area is provided on the second insulating layer (6), and a first pad (51) and a second pad (52) are correspondingly manufactured, wherein the first pad (51) partially penetrates the transparent conductive layer (3) and the first insulating layer 1 (41) and contacts the transparent conductive layer (3), the first insulating layer 1 (41) and the second semiconductor layer (24) respectively, and the second pad (52) is arranged above the first insulating layer 2 (42) and contacts partially with the bottom wall of the groove (26); Performing a thinning process on the substrate (1), and manufacturing a back reflector (27) on the back side of the substrate (1); Cut to form individual components.

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