Semiconductor substrate with aluminum-based bonding pad material

Abstract

A semiconductor substrate (100) has a bond pad (110). The bond pad (110) includes an aluminum alloy layer having a chemical composition that includes a primary alloying element selected from the group consisting of Zn, Mg, Cu, Si, and Sc. If the primary alloying element is Cu, the chemical composition further includes at least one element selected from the group consisting of Ti, Mg, Ag, and Zr.

Description

TECHNICAL FIELD

[0001] The present disclosure relates generally to techniques for manufacturing semiconductor substrates with bond pads, and in particular to semiconductor substrates with aluminum-based bond pads. BACKGROUND

[0002] Wire bonding on aluminum (Al) bond pads has become a widely used method in semiconductor device manufacturing. Such Al bond pads are typically made of a binary Al alloy AlCu, AlSi or a ternary Al alloy AlSiCu, rather than pure Al. In particular, AlSiCu with a chemical composition consisting of 98.5% by weight (wt) Al, 1.0% wt Si and 0.5% wt Cu, the remainder being incidental impurities, is widely used in the art. It has proven that this alloy combines good processability with high structural homogeneity. Furthermore, AlSiCu bond pads allow for low electrical contact resistance with the bond wire and effectively prevent electromigration.

[0003] Prior to attaching a bond wire to a bond pad, a wafer typically undergoes a series of tests. During wafer testing, probe needles are used to contact the bond pads on the wafer. During probing, the contact force must reach a sufficient value to ensure low electrical resistance and stable electrical contact with the bond pads. However, high contact forces can cause plastic deformation or indentations ("scrub depths") on the bond pads and can further cause cracks in the oxide layer underneath the bond pads. Such bond pad deformations or cracks in the underlying layer can reduce the reliability of wire bonding during subsequent manufacturing and can cause yield loss during production or early field failures.

[0004] In some applications, e.g. for high power devices, repeated wafer probing at different temperatures is required. This increases the risk of the pads or the underlying layer being subjected to undue mechanical damage. In short, the integrity of the bond pads and / or the quality of the bond can be significantly affected by wafer testing. SUMMARY

[0005] According to one aspect of the present disclosure, a semiconductor substrate has a bond pad. The bond pad comprises an aluminum alloy layer having a chemical composition comprising at least 0.3% by weight of at least one of Zn, Mg, Sc, Zr, Ti, Ag and / or Mn, optionally Cu and / or Si, the remainder being Al and incidental impurities.

[0006] According to another aspect of the disclosure, a method of manufacturing a semiconductor substrate having a bond pad includes providing a semiconductor substrate. The method also includes depositing a bond pad material over the semiconductor substrate, the bond pad material including an aluminum alloy having a chemical composition including at least 0.3% by weight of at least one of Zn, Mg, Sc, Zr, Ti, Ag, and / or Mn, optionally also Cu and / or Si, with the remainder being Al and incidental impurities. BRIEF DESCRIPTION OF DRAWINGS

[0007] Elements of the drawings are not necessarily to scale relative to each other. Like reference numerals designate corresponding similar parts throughout the several views. Features of the various illustrated embodiments can be combined, unless otherwise explicitly stated, and / or can be omitted, unless otherwise described as necessary. Embodiments are depicted in the drawings and are described in detail in the following description.

[0008] Figure 1 is a cross-sectional view showing one example of a semiconductor substrate having a bond pad with a bond wire bonded thereon.

[0009] Figures 2A-2B is a cross-sectional view showing an exemplary wafer test apparatus for wafer probing before and after a probe card touchdown.

[0010] Figure 3 is a cross-sectional view showing an exemplary indentation created on a bond pad on a semiconductor substrate by a probe contact with the bond pad.

[0011] Figure 4 is a cross-sectional view showing an exemplary crack in a layer under a bond pad caused by a probe or wire bonding process.

[0012] Figure 5 is a flowchart depicting various stages of a method of manufacturing a semiconductor substrate having a bond pad. DETAILED DESCRIPTION

[0013] It is to be understood that the features of the various example embodiments and examples described herein can be combined with each other, unless specifically noted otherwise.

[0014] REFERENCE Figure 1 only a small portion of the semiconductor substrate 100 located near a bond pad 110. The semiconductor substrate 100 can be a wafer or a chip, for example. The bond pad 110 includes a layer of Al alloy material having a thickness t. The bond pad 110 can include a single layer of special Al alloy material (as shown, for example), or can include a layer of one or more different metal materials, such as those Al alloy materials described in further detail below (as shown, for example). Figure 1 Figure 1 ​(Not shown in the image).

[0015] The underlying layer 120 extends below the bonding pad 110. The underlying layer 120 may be, for example, an insulating layer, such as an inorganic layer comprising or composed of SiO2 or any other inorganic insulating material. The underlying layer 120 may also be a bulk semiconductor material layer.

[0016] In addition to bonding pads 110 and the underlying layer 120, the semiconductor substrate 100 may include, for example, a wiring metal layer 130 embedded in an insulating layer 140 (e.g., a low-k material). The wiring metal layer 130 and the insulating layer 140 may form the top metallization layer of the semiconductor substrate 100.

[0017] Furthermore, the semiconductor substrate 100 may include, for example, one or more of the following: a top resist layer 150 (e.g., an imide layer); a passivation layer 160 such as a Si3N4 layer; a metal liner 170 such as TaN and / or TiN disposed between the bonding pads 110 and the wiring metal layer 130; and a barrier layer 180 such as Si3N4 separating the underlying layer 120 from the insulating layer 140. The semiconductor substrate 100 includes a layer below the bonding pads 110 (and, for example, in...). Figure 1 The semiconductor layer (not shown) is located below the other layers shown. Semiconductor devices such as integrated circuits (ICs) and transistors can be integrally integrated into the semiconductor layer of the semiconductor substrate 100. The semiconductor devices can be electrically connected to the bonding pads 110, for example, via the metal layer 130.

[0018] The IC integrated in the semiconductor substrate 100 can be any type of IC, such as a logic IC, a memory IC, a power IC such as a power transistor or a power diode, or an on-chip power system (SoC) such as a power amplifier. The semiconductor layer of the semiconductor substrate 100 can include or is made of semiconductor materials such as Si, SiC, SiGe, GaAs, GaN, AlGaN, InGaAs, InAlAs, etc.

[0019] Figure 1 A bonding conductor 190 is further illustrated, bonded to bonding pad 110. The bonding conductor 190 may comprise or be composed of, for example, Cu, Au, or Al. The bonding conductor 190 can be bonded to the bonding pad 110 by heating the bonding conductor 190 and applying ultrasonic energy and pressure during the bonding (i.e., soldering) process. Figure 1 The depicted bonding pad 110 has an ideally uniform and complete surface, allowing for low electrical contact resistance between the bonding pad 110 and the bonding wire 190.

[0020] Figure 2AA cross-sectional view of an exemplary wafer testing apparatus 200 for wafer probing is shown. The wafer testing apparatus 200 can include a holder 210, a wafer support (chuck) 220, and a manipulator 250 configured to change a distance between the holder 210 and the wafer support 220. A probe card 230 can be attached to the holder 210. The probe card 230 can include a probe carrier 231 and a plurality of probes 232 fixed at the probe carrier 231. The probes 232 can be of a cantilever type having a cantilever section 232_1 and a tip section 232_2.

[0021] A wafer 240 can be placed on the wafer support 220. The wafer 240 can be a semiconductor substrate 100 or a precursor of the semiconductor substrate 100. For example, the semiconductor substrate 100 can include a chip cut from the wafer 240.

[0022] The wafer 240 can be produced by a specific semiconductor technology. The (specific) semiconductor technology can be defined by a special bond pad material, a special thickness of the bond pad, a special design of the bond pad, and a special layer stack underneath the bond pad.

[0023] Figure 2B The wafer testing apparatus 200 is shown during touchdown of the probe card 230 on the wafer 240. During touchdown, the tips 232_2 of the probes 232 come into contact with the bond pads 110 (see Fig. 1) on the wafer 240. The touchdown can be accomplished by the manipulator 250. The overdrive (i.e. the displacement from the initial probe bond pad contact to the set position of the wafer testing apparatus 200) can be precisely measured and controlled. The overdrive corresponds to the force exerted by the tips of the probes 232 on the bond pads. The overdrive and the tip diameter are key parameters for the probability of bond pad damage occurrence during wafer probing. Figure 1

[0024] Subsequent wire bonding can require a sufficient residual bond pad thickness in order to reliably bond between the wire bond and the bond pad and / or to minimize the risk of bond pad cracking, which can lead to failure of the integrated device. Therefore, the indentation depth (also referred to as "scratch depth") caused by the contact of the probes on the bond pads should not exceed a critical limit.

[0025] Exceeding this critical limit is considered a first type of probing damage. Another type of probing damage is the occurrence of cracks in the underlying layers of the bond pad. The occurrence of cracks can lead to failure of the integrated device.

[0026] Figure 3 ​A first type of damage is shown, i.e. a probe mark 310 creating a critical scrub depth on the bond pad 110. The scrub depth resulting from the touchdown of the probe on the bond pad depends, for example, on the force applied on the bond pad 110, the geometry and diameter of the tip of the probe 232 and the material of the bond pad 110.

[0027] Figure 4 A second type of damage is shown, i.e. a crack 410 created in the underlying layer 120 of the bond pad 110. The crack probability depends, for example, on the force applied on the bond pad, the geometry and diameter of the tip of the probe, the material of the bond pad 110, the thickness t of the bond pad 110 and the material and thickness of the underlying layer 120.

[0028] Furthermore, the mechanical and thermal load applied to the bond pad 110 during the wire bonding process can increase the risk of bond pad damage occurrence.

[0029] Both types of probe damage (and any damage that can subsequently be caused by the wire bonding process) can be detrimental to the operability of a device implementing the semiconductor substrate 100. If the scrub depth exceeds a certain limit, the reliability of the wire bond on the bond pad 110 can be significantly reduced. The crack 410 occurring in the underlying layer 120 can lead to a malfunction of the integrated device. Both types of damage can lead to yield loss or early device failure.

[0030] The probe card 230 can carry more than 10,000, 15,000 or even 20,000 probes, the variation of the tip diameter of which can be greater than ±20% or 25%. Therefore, a consistent scrub depth on the bond pad 110 and / or a consistent crack probability of the underlying layer 120 cannot be achieved. It is therefore a challenge to find optimal probe parameters (overdrive, tip diameter) and appropriate bond pad layer stack design (i.e. appropriate semiconductor technology) for a reliability of a few parts per million.

[0031] In the past, this problem was mainly solved by optimization and close monitoring and readjustment of the probe parameters (e.g. tip diameter, probe card force / probe card overdrive) during testing and / or by providing a bond pad 110 and / or an underlying layer 120 of sufficient thickness t.

[0032] The disclosure herein relies on a method to consider the composition of the bond pad material to set the mechanical properties of the bond pad 110, which is advantageous in reducing the likelihood of the first and / or second type of probe damage to occur, while still being able to meet the structural and electrical requirements to ensure a safe wire bond.

[0033] More specifically, it has been found that the high tensile strength aluminum alloys as detailed below can result in a significant reduction of yield loss and / or early failure while still providing the necessary microstructural and electrical bond pad prerequisites required for wire bonding applications.

[0034] In the following, "alloy of X" (including further components Y, Z,...) means that X is the essential component of the alloy, i.e. the content of X in % by weight (weight percent) is larger than the content of Y in % by weight and the content of Z in % by weight, respectively. In particular, this can mean that the contribution of X is at least 50% by weight, 80% by weight or 90% by weight.

[0035] The notation XY refers to an alloy of X which at least includes Y as a further component. In particular, it can refer to an alloy of X which includes Y as the only remaining component (i.e. closed composition). In this case, the notation XY means that the alloy XY has a composition consisting of X (weight percent of X) and Y (weight percent of Y) with the remainder being only incidental impurities. The notation XYZ... has likewise the meaning of "open" or "closed" composition, wherein X, Y, Z,... form the only composition of the alloy (except for incidental impurities).

[0036] Generally, the alloy XY... can refer to a binary, ternary, quaternary, quinary or senary alloy of X, wherein Y is the only (binary alloy) or the main alloying element. Additional alloying components can be, for example, Si, Mg, Zn, Cu, Fe, Ti, Mn, Li, Ag, Ni and B.

[0037] The bond pad 110 is made of or comprises an Al-alloy layer having a chemical composition comprising a main alloying element selected from the group consisting of Zn, Mg, Cu, Si and Sc. If the main alloying element is Cu, the chemical composition further comprises at least one element selected from the group consisting of Ti, Mg, Ag and Zr. The bond pad 110 in the embodiment has a thickness t of at least 1 pm.

[0038] In particular, the chemical composition can be denoted by AlXY, wherein X is the main alloying element and Y is different from X, Y is an optional inclusion of at least one element selected from the group consisting of Zr, Si, Mg and Cu, if the main alloying element X is Zn, Mg, Si or Sc, or Y is an inclusion of at least one element selected from the group consisting of Zr, Ti, Mg and Ag, if the main alloying element is Cu, and the remainder is Al and incidental impurities.

[0039] By way of example, the Al-alloy can be, for example, AlZnMgCu, AlCuTiMgAg, AlCuZr, AlSc, AlMgZr, AlSiZr or AlMgSi. In view of the mechanical, electrical and microstructural properties of these aluminum alloys which are suitable for avoiding probe damage, they are considered to be promising.

[0040] An Al alloy, AlZnMgCu, can have a chemical composition in weight percent including 5.1%wt < Zn < 6.2%wt, 2.1%wt < Mg < 2.9%wt, 1.2%wt < Cu < 2.0%wt, the remainder being Al and incidental impurities.

[0041] An Al alloy, AlCuTiMgAg, can have a chemical composition in weight percent including 0.5%wt < Cu < 8%wt, 0.3%wt < Ti < 1.0%wt, 0.5%wt < Mg < 1.0%wt, 0.5%wt < Ag < 3%wt, the remainder being Al and incidental impurities.

[0042] An Al alloy, AlMgZr, can have a chemical composition in weight percent including 0.3%wt < Mg < 5.0%wt, 0.3%wt < Zr < 5.0%wt, the remainder being Al and incidental impurities.

[0043] An Al alloy, AlCuZr, can have a chemical composition in weight percent including 0.3%wt < Cu < 5.0%wt, 0.3%wt < Zr < 5.0%wt, the remainder being Al and incidental impurities.

[0044] An Al alloy, AlSc, can have a chemical composition in weight percent including 0.3%wt < Sc < 5.0%wt, the remainder being Al and incidental impurities.

[0045] An Al alloy, AlSiZr, can have a chemical composition in weight percent including 0.3%wt < Si < 5.0%wt, 0.3%wt < Zr < 5.0%wt, the remainder being Al and incidental impurities.

[0046] An Al alloy, AlMgSi, can have a chemical composition in weight percent including 0.3%wt < Mg < 5.0%wt, 0.3%wt < Si < 5.0%wt, the remainder being Al and incidental impurities.

[0047] Table 1 shows the results of the measurement of the mechanical properties of the bonding pads 110, i.e. the Brinell hardness (HB), the yield strength (MPa) and the tensile strength (MPa) of three reference materials, i.e. steel (ref_1), pure Al (99.5wt% Al, ref_2) and AlCu4Mg1 (hard aluminum: Dural, ref_3), and two example Al alloy materials, i.e. AlZn5Mg2Cu1.5 (no_1: composition: 5.0wt% Zn, 2.0wt% Mg, 1.5wt% Cu, the rest being Al and incidental impurities) and AlCu4Ti0.6Mg0.8Ag2 (no_2: composition: 4.0wt% Cu, 0.6wt% Ti, 0.8wt% Mg, 2.0wt% Ag, the rest being Al and incidental impurities).

[0048] As can be seen from Table 1, the hardness of the example Al alloys no_1 and no_2 is approximately equal to or greater than the hardness of hard aluminum (ref_3). The yield strength of the example Al alloys no_1 and no_2 is significantly higher than the yield strength of hard aluminum. In addition, the tensile strength of the aluminum alloys no_1 and no_2 is in the same range as the tensile strength of hard aluminum (ref_3). Compared to unalloyed Al (ref_2), the mechanical properties of the example Al alloys no_1 and no_2 are significantly improved by alloying. Needless to say, the mechanical properties of steel (ref_1) are still higher than those of the example Al alloys no_1 and no_2.

[0049] Table 1

[0050]

[0051] In the case of the Al alloys no_1 and no_2, the hardness was determined from the composition of the homogeneous material by mixing the alloy material and manufacturing a homogeneous material sample (sputter target) (e.g. a cube) therefrom.

[0052] The example Al alloy compositions for AlCuZr, AlSc, AlMgZr, AlSiZr and AlMgSi alloy materials are:

[0053] no_3: Cu = 0.5% by weight, Zr = 0.5% by weight, the rest Al;

[0054] no_4: Sc = 0.3% by weight, the rest Al;

[0055] no_5: Mg = 3.0% by weight, Zr = 0.5% by weight, the rest Al;

[0056] no_6: Si = 3.0% by weight, Zr = 0.5% by weight, the rest Al;

[0057] no_7: Mg = 3.0 wt%, Si = 1.0 wt%, balance Al;

[0058] The hardness of the example Al alloys no_3, no_4, no_5 and no_7 was measured on the bond pads by nanoindentation measurements at a depth of 300 nm. As shown in Table 2, the hardness values of the bond pads of the Al alloys no_3 to no_5 and no_7 can be shown in percent relative to a reference point (ref_pad) of 100% which corresponds to the hardness value of an AlSiCu (more specifically Al98.5Si1.0Cu0.5) alloy bond pad. All bond pads were produced by using the same process parameters in terms of annealing temperature and annealing time. There are no hardness values of the bond pads of Al alloy No_6 yet, but the hardness should be increased.

[0059] Table 2

[0060] ref_pad AlSiCu 100,00％ no_3 AlCuZr 125,80％ no_4 AlSc 112,35％ no_5 AlMgZr 113,84％ no_7 AlMgSi 35,67％

[0061] With regard to the low hardness values of the preliminary measurements of the example alloy no_7 (AlMgSi), it is believed that this alloy can still be a candidate material to increase the hardness of the bond pads once the process parameters to control the size and growth of the grains (sputtering process parameters, annealing temperature and annealing time) are optimized.

[0062] Since the hardness is an approximate measure of the tensile strength, the tensile strength is similarly increased.

[0063] With reference to Figure 5 A method of manufacturing a semiconductor substrate having a bond pad can comprise providing a semiconductor substrate at step S1.

[0064] At step S2, a bond pad material is deposited on the semiconductor substrate. The bond pad material can comprise an aluminum alloy having a chemical composition comprising a primary alloying element selected from the group consisting of Zn, Mg, Cu, Si and Sc, wherein, if the primary alloying element is Cu, the chemical composition further comprises at least one element selected from the group consisting of Ti, Mg, Ag and Zr.

[0065] The deposition process can be performed, for example, by sputtering a target having the chemical composition of the bond pad to be made. After the deposition process, a conventional annealing process (for example similar to the annealing process used for preparing conventional AlSi1Cu0.5 bond pads) can be performed. Further, as an alternative to sputtering, other deposition methods, for example vapor deposition, can also be envisaged.

[0066] Further, the use of an aluminum alloy as described above for a bond pad on a semiconductor substrate is disclosed.

[0067] The following examples relate to other aspects of the present disclosure:

[0068] Example 1 is a semiconductor substrate having a bond pad comprising an aluminum alloy layer, the chemical composition of the aluminum alloy comprising a primary alloying element selected from Zn, Mg, Cu, Si, and Sc, wherein, if the primary alloying element is Cu, the chemical composition further comprises at least one element selected from Ti, Mg, Ag, and Zr.

[0069] In Example 2, the subject matter of Example 1 can optionally include wherein the chemical composition is represented by AlXY, wherein X is the primary alloying element, Y is an optional inclusion of at least one element selected from Zr, Si, Mg, and Cu if the primary alloying element is Zn, Mg, Si, or Sc, or Y is an inclusion of at least one element selected from Zr, Ti, Mg, and Ag if the primary alloying element is Cu, the remainder being Al and incidental impurities.

[0070] In Example 3, the subject matter of Example 1 or 2 can optionally include wherein the aluminum alloy has a chemical composition of AlZnMgCu.

[0071] In Example 4, the subject matter of Example 3 can optionally include wherein the aluminum alloy has a chemical composition, in weight percent, comprising 5.1%wt < Zn < 6.2%wt, 2.1%wt < Mg < 2.9%wt, 1.2%wt < Cu < 2.0%wt, the remainder Al and incidental impurities.

[0072] In Example 5, the subject matter of Example 1 or 2 can optionally include wherein the aluminum alloy has a chemical composition of AlCuTiMgAg.

[0073] In Example 6, the subject matter of Example 5 can optionally include wherein the aluminum alloy has a chemical composition, in weight percent, comprising 0.5%wt < Cu < 8.0%wt, 0.3%wt < Ti < 1.0%wt, 0.5%wt < Mg < 1.0%wt, 0.5%wt < Ag < 3.0%wt, the remainder Al and incidental impurities.

[0074] In Example 7, the subject matter of Example 1 or 2 can optionally include wherein the aluminum alloy has a chemical composition of AlCuZr.

[0075] In Example 8, the subject matter of Example 7 can optionally include wherein the aluminum alloy has a chemical composition, in weight percent, comprising 0.3%wt < Cu < 5.0%wt, 0.3%wt < Zr < 5.0%wt, the remainder Al and incidental impurities.

[0076] In Example 9, the subject matter of Example 1 or 2 can optionally include wherein the aluminum alloy has a chemical composition of AlSc.

[0077] In Example 10, the subject matter of Example 9 can optionally include wherein the aluminum alloy has a chemical composition, by weight percent, including 0.3% wt < Sc < 5.0% wt, the remainder Al and incidental impurities.

[0078] In Example 11, the subject matter of Example 1 or 2 can optionally include wherein the aluminum alloy has a chemical composition of AlMgZr.

[0079] In Example 12, the subject matter of Example 10 can optionally include wherein the aluminum alloy has a chemical composition, by weight percent, including 0.3% wt < Mg < 5.0% wt, 0.3% wt < Zr < 5.0% wt, the balance Al and incidental impurities.

[0080] In Example 13, the subject matter of Example 1 or 2 can optionally include wherein the aluminum alloy has a chemical composition of AlSiZr.

[0081] In Example 14, the subject matter of Example 13 can optionally include wherein the aluminum alloy has a chemical composition, by weight percent, including 0.3% wt < Si < 5.0% wt, 0.3% wt < Zr < 5.0% wt, the remainder Al and incidental impurities.

[0082] In Example 15, the subject matter of Example 1 or 2 can optionally include wherein the aluminum alloy has a chemical composition of AlMgSi.

[0083] In Example 16, the subject matter of Example 15 can optionally include wherein the aluminum alloy has a chemical composition, by weight percent, including 0.3% wt < Mg < 5.0% wt, 0.3% wt < Si < 5.0% wt, the remainder Al and incidental impurities.

[0084] Example 17 is a method of fabricating a semiconductor substrate having a bond pad, the method comprising: providing a semiconductor substrate; and depositing a bond pad material over the semiconductor substrate, the bond pad material comprising an aluminum alloy having a chemical composition including a primary alloying element selected from Zn, Mg, Cu, Si, and Sc, wherein if the primary alloying element is Cu, the chemical composition further includes at least one element selected from Ti, Mg, Ag, and Zr.

[0085] While particular embodiments have been shown and described, it will be obvious to those skilled in the art that changes and modifications can be made without departing from the scope of the present application. The application is intended to cover any alternatives, modifications, or equivalents, as can be included within the scope of the particular embodiments discussed herein. Accordingly, the application is intended to be limited only by the scope of the claims and their equivalents.

Claims

1. A semiconductor substrate (100) having a bond pad (110), the bond pad (110) comprising an aluminum alloy layer, wherein, The aluminum alloy comprises: AlZnMgCu, AlCuTiMgAg, AlCuZr, AlSc, AlMgZr, AlSiZr, or AlMgSi, with the remainder being incidental impurities.

2. The semiconductor substrate of claim 1, wherein, The bond pad has a thickness of at least 1 pm.

3. The semiconductor substrate (100) according to claim 1 or 2, wherein The aluminum alloy has a chemical composition of AlZnMgCu.

4. The semiconductor substrate (100) according to claim 3, wherein The aluminum alloy has a chemical composition by weight percentage comprising 5.1%wt < Zn < 6.2%wt, 2.1%wt < Mg < 2.9%wt, 1.2%wt < Cu < 2.0%wt, with the remainder being at least Al and incidental impurities.

5. The semiconductor substrate (100) according to claim 1 or 2, wherein The aluminum alloy has a chemical composition of AlCuTiMgAg.

6. The semiconductor substrate (100) of claim 5, wherein The aluminum alloy has a chemical composition by weight percentage comprising 0.5% < Cu < 8.0%wt, 0.3%wt < Ti < 1.0%wt, 0.5%wt < Mg < 1.0%wt, 0.5%wt < Ag < 3.0%wt, with the remainder being at least Al and incidental impurities.

7. The semiconductor substrate (100) according to claim 1 or 2, wherein The aluminum alloy has a chemical composition of AlCuZr.

8. The semiconductor substrate (100) according to claim 7, wherein The aluminum alloy has a chemical composition by weight percentage comprising 0.3%wt < Cu < 5.0%wt, 0.3%wt < Zr < 5.0%wt, with the remainder being at least Al and incidental impurities.

9. The semiconductor substrate (100) according to claim 1 or 2, wherein The aluminum alloy has a chemical composition of AlSc.

10. The semiconductor substrate (100) according to claim 9, wherein The aluminum alloy has a chemical composition by weight percentage comprising 0.3%wt < Sc < 5.0%wt, with the remainder being at least Al and incidental impurities.

11. The semiconductor substrate (100) according to claim 1 or 2, wherein The aluminum alloy has a chemical composition of AlMgZr.

12. The semiconductor substrate (100) according to claim 11, wherein The aluminum alloy has a chemical composition by weight percentage comprising 0.3%wt < Mg < 5.0%wt, 0.3%wt < Zr < 5.0%wt, with the remainder being at least Al and incidental impurities.

13. The semiconductor substrate (100) according to claim 1 or 2, wherein The aluminum alloy has a chemical composition of AlSiZr.

14. The semiconductor substrate (100) according to claim 13, wherein The aluminum alloy has a chemical composition by weight percentage comprising 0.3%wt < Si < 5.0%wt, 0.3%wt < Zr < 5.0%wt, with the remainder being at least Al and incidental impurities.

15. The semiconductor substrate (100) according to claim 1 or 2, wherein The aluminum alloy has a chemical composition of AlMgSi.

16. The semiconductor substrate (100) of claim 15, wherein The aluminum alloy has a chemical composition by weight percentage comprising 0.3%wt < Mg < 5.0%wt, 0.3%wt < Si < 5.0%wt, with the remainder being at least Al and incidental impurities.

17. A method of manufacturing a semiconductor substrate (100) having a bond pad (110), the method comprising: providing a semiconductor substrate (100); and depositing a bond pad (110) material over the semiconductor substrate (100), the bond pad (110) material comprising an aluminum alloy, the aluminum alloy comprising: AlZnMgCu, AlCuTiMgAg, AlCuZr, AlSc, AlMgZr, AlSiZr, or AlMgSi, with the remainder being incidental impurities.

18. The method of claim 17, wherein, The aluminum alloy further includes Cu and / or Si. The aluminum alloy further includes Cu and / or Si.

Images