Joining system and joining method

Abstract

A chip bonding system comprises: an activation device (60) having a frame holding part (621) and a particle beam source (61) for irradiating a sheet (TE) on which a chip (CP) is attached and held by the frame holding part (621) with a particle beam to activate a bonding surface (CPf) of a chip (CP); and a bonding device for bonding the chip (CP) whose bonding surface (CPf) has been activated by the activation device (60) to a substrate by bringing it into contact with the substrate. The frame holding part (621) supports a holding frame (112) that holds a sheet (TE) formed of resin and on which a chip (CP) is attached, so that a side of the sheet (TE) on which a chip (CP) is attached is exposed to the particle beam source (61) side.

Description

Technical Field

[0001] The present invention relates to a joining system and a joining method. Background Art

[0002] A method has also been proposed in which the bonding surfaces of two objects to be bonded are brought into contact with each other after plasma treatment is applied to the bonding surfaces of the two objects to be bonded (for example, refer to Patent Document 1). Here, the plasma treatment is performed by exposing to any one of oxygen, argon, NH3 and CF4 RIE (Reactive Ion Etching) plasma. In addition, a method is being provided in which the bonding surface of the chip to be bonded to the substrate is brought into contact with the substrate after plasma treatment is applied to the bonding surface of the chip to be bonded to the substrate.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application No. 2003-523627 Summary of the invention

[0006] Problems to be solved by the invention

[0007] However, as described in Patent Document 1, when the bonding surface of the chip is exposed to plasma, the etched material returns to the bonding surface as particles due to gravity, or the ionized material among the impurities generated from the bonding surface of the chip collides with the bonding surface again, thereby sometimes impurities composed of other materials adhere to the bonding surface and deteriorate the bonding strength. In this case, there is a possibility that the bonding between the chip and the substrate will be poor.

[0008] The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a joining system and a joining method that suppress the occurrence of joining defects between a first object to be joined and a second object to be joined.

[0009] Solutions for solving problems

[0010] In order to achieve the above-mentioned purpose, the chip bonding system of the present invention is a bonding system for bonding a second object to be bonded to a first object to be bonded, and the chip bonding system comprises: an activation processing device, comprising: an object supporting portion, supporting an object including at least the second object to be bonded; and a particle beam source, which activates a bonding surface of the second object to be bonded by irradiating the object with a particle beam, and after the object is arranged on a processing surface in an asymmetrical configuration, an activation treatment is performed by the particle beam source; and a bonding device, which bonds the second object to be bonded to the first object to be bonded by bringing the second object to be bonded, whose bonding surface has been activated by the activation processing device, into contact with the first object to be bonded, and the object supporting portion supports the object in a posture in which a portion of the second object to be bonded in the object, including the bonding surface, formed of multiple materials, is exposed to the particle beam source side.

[0011] From another point of view, the chip bonding method of the present invention is a bonding method for bonding a second object to be bonded to a first object to be bonded, comprising: a first activation step, wherein an object including at least the second object to be bonded is disposed on a processing surface in an asymmetrical configuration, and a bonding surface of the second object to be bonded is activated by irradiating a portion of the second object to be bonded in the object including the bonding surface and formed of multiple materials with a particle beam; and a bonding step, wherein the second object to be bonded having the activated bonding surface is bonded to the first object to be bonded by bringing the second object to be bonded having the activated bonding surface into contact with the first object to be bonded.

[0012] Effects of the Invention

[0013] According to the present invention, the object support portion supports the object in a posture that the portion of the second object to be bonded in the object, which is formed of multiple materials and includes a bonding surface, is exposed to the particle beam source side, and the particle beam source activates the bonding surface of the second object to be bonded by irradiating the object with a particle beam. That is, the bonding surface of the second object to be bonded is activated by irradiating the portion of the second object to be bonded in the object including at least the second object to be bonded, which is formed of multiple materials and includes a bonding surface, with a particle beam. Thus, the collision of impurities generated from the object due to the irradiation of the particle beam to the bonding surface of the second object to be bonded is suppressed, and the deterioration of the bonding strength caused by the attachment of impurities composed of other materials to the bonding surface of the second object to be bonded due to the collision of impurities is suppressed. Therefore, the occurrence of poor bonding between the first object to be bonded and the second object to be bonded is suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a schematic configuration diagram of a die bonding system according to an embodiment of the present invention.

[0015] Figure 2 This is a schematic configuration diagram of a part of the die bonding system according to the embodiment, as viewed from the side.

[0016] Figure 3A It is a top view of the chip holding portion according to the embodiment.

[0017] Figure 3B It is a cross-sectional view showing a part of the chip transport device according to the embodiment.

[0018] Figure 4A It is a cross-sectional view showing a head of the bonding device according to the embodiment.

[0019] Figure 4B It is a top view showing the head of the bonding device according to the embodiment.

[0020] Figure 5 It is a schematic configuration diagram of an activation treatment device according to an embodiment.

[0021] Figure 6 It is an operation explanation diagram of the activation treatment device according to the embodiment.

[0022] Figure 7 It is a block diagram showing a control unit according to an embodiment.

[0023] Figure 8 This is a flowchart showing an example of the flow of the die bonding method according to the embodiment.

[0024] Fig.9A This is a schematic side view showing a state of irradiating a particle beam in the activation treatment apparatus according to the embodiment.

[0025] Fig. 9B This is a schematic plan view showing a state of irradiating a particle beam in the activation treatment apparatus according to the embodiment.

[0026] Fig. 10A This is a schematic side view showing a state where a sheet is reversed in the activation treatment apparatus according to the embodiment.

[0027] Fig. 10B This is a schematic side view showing a state of irradiating nitrogen radicals in the activation treatment apparatus according to the embodiment.

[0028] Fig.11A It is a schematic plan view showing a state in which chips are supplied from a chip supply unit in the chip bonding system according to the embodiment.

[0029] Fig. 11B This is a schematic side view showing a state in which chips are supplied from a chip supply unit in the chip bonding system according to the embodiment.

[0030] Fig. 12A This is a schematic plan view showing a state in which a chip is transferred from a chip transport unit to a head in the chip bonding system according to the embodiment.

[0031] Fig. 12BThis is a schematic side view showing a state in which a chip is transferred from a chip transport unit to a head in the chip bonding system according to the embodiment.

[0032] Fig.13 It is a schematic diagram of the structure of an activation treatment device of a comparative example.

[0033] Fig.14A This is a schematic diagram showing a state before the holding frame is moved regarding the support portion of the cleaning device according to a modified example.

[0034] Fig. 14B This is a schematic diagram showing a state in which a holding frame is moved in a supporting portion of a cleaning device according to a modified example.

[0035] Fig. 14C This is a schematic diagram showing a state in which a frame support portion and an inner support portion are rotated in a support portion of a cleaning device according to a modified example.

[0036] Fig.15A This is a schematic diagram of a substrate to be cut according to a modified example.

[0037] Fig. 15B It is a schematic diagram of a chip CP according to a modified example.

[0038] Fig.16A It is a schematic cross-sectional view of a chip holding portion according to a modified example.

[0039] Fig. 16B It is a schematic cross-sectional view of a chip holding portion according to a modified example.

[0040] Fig.17A This is a schematic diagram showing a part of a bonding device according to a modified example.

[0041] Fig. 17B This is a schematic diagram showing a part of a bonding device according to a modified example.

[0042] Fig. 17C This is a schematic diagram showing a part of a bonding device according to a modified example. DETAILED DESCRIPTION

[0043] Hereinafter, the chip bonding system of the embodiment of the present invention will be described with reference to the accompanying drawings. The chip bonding system of the present embodiment is a system in which a chip is mounted on a substrate. Here, the substrate is equivalent to the first bonded object, and the chip is equivalent to the second bonded object. As a chip, for example, it is a semiconductor chip supplied from a cut substrate. In addition, as a chip, there can be cited a chip in which only an insulating material is exposed on the bonding surface bonded to the substrate or a chip in which an insulating material and a conductive material are exposed. Here, as an insulating material, for example, oxides such as SiO2 and Al2O3, nitrides such as SiN and AlN, oxynitrides such as SiON, or resins can be cited. In addition, as a conductive material, semiconductor materials such as Si and Ge, metals such as Cu, Al, and solder can be cited. That is, the chip can form a variety of regions with different materials on its bonding surface. Specifically, the chip is a chip on which an electrode and an insulating film are provided on its bonding surface, and the insulating film can be formed by oxides such as SiO2 and Al2O3 or nitrides such as SiN and AlN. The chip bonding system activates the mounting surface of the substrate on which the chip is mounted and the bonding surface of the chip, and then bonds the chip to the substrate by bringing the chip into contact with the substrate or applying pressure. The chip is then firmly bonded to the substrate by heating the substrate or the like.

[0044] like Figure 1 As shown, the chip bonding system 1 of this embodiment includes a chip supply device 10, a chip conveying device 39, a bonding device 30, an activation treatment device 60, a conveying device 70, a loading and unloading unit 80, a cleaning device 85, and a control unit 90. The conveying device 70 includes a conveying robot 71, and the conveying robot 71 has an arm for grasping a substrate WT or a holding frame 112 for holding a sheet TE to which a chip CP is attached. Here, the sheet TE is formed of, for example, a resin. Figure 1 As shown by the arrow AR11, the conveying robot 71 can move the substrate WT received from the loading and unloading unit 80 or the holding frame 112 holding the sheet TE with the chip CP attached thereto to the positions for transfer to the activation processing device 60, the cleaning device 85, the bonding device 30, and the chip supply device 10. Here, the holding frame 112 holding the sheet TE with the chip CP attached thereto corresponds to the object including the chip CP.

[0045] When receiving the substrate WT from the loading and unloading unit 80, the conveying robot 71 moves to the position for transferring to the activation processing device 60 while gripping the received substrate WT, and transfers the substrate WT to the activation processing device 60. In addition, after the activation processing of the mounting surface WTf of the substrate WT in the activation processing device 60 is completed, the conveying robot 71 receives the substrate WT from the activation processing device 60, and transfers the received substrate WT to the cleaning device 85. Moreover, after the water cleaning of the substrate WT in the cleaning device 85 is completed, the conveying robot 71 receives the substrate WT from the cleaning device 85, and after inverting the substrate WT while gripping the received substrate WT, moves the received substrate WT to the position for transferring to the bonding device 30. Then, the conveying robot 71 transfers the substrate WT to the bonding device 30.

[0046] In addition, when receiving the holding frame 112 holding the sheet TE with the chip CP attached thereto from the loading and unloading unit 80, the conveying robot 71 moves the holding frame 112 to the position for transfer to the activation processing device 60 while grasping the received holding frame 112, and transfers the holding frame 112 to the activation processing device 60. Moreover, after the activation processing of the bonding surface of the chip CP attached to the sheet TE in the activation processing device 60 is completed, the conveying robot 71 receives the holding frame 112 from the activation processing device 60, and transfers the received holding frame 112 to the chip supply device 10. In addition, a HEPA (High Efficiency Particulate Air) filter (not shown) is provided in the conveying device 70, for example. As a result, the inside of the conveying device 70 becomes an atmospheric pressure environment with very few particles.

[0047] The cleaning device 85 includes a table 852 for supporting the substrate WT, a table driving unit 853 for rotationally driving the table 852, and a cleaning head 851 disposed vertically above the table 852 and discharging water vertically downward. The cleaning device 85 performs water cleaning on the substrate WT by rotating the table 852 through the table driving unit 853 while the substrate WT is supported on the table 852 and discharging water from the cleaning head 851 toward the substrate WT.

[0048] The chip supply device 10 is a second bonded object supply device that cuts out a chip CP from a plurality of chips CP produced by cutting a substrate, and supplies the chip CP to the bonding device 30. Here, cutting refers to a process of cutting a substrate on which a plurality of electronic components are produced in the longitudinal and transverse directions to form a chip. In addition, the chip CP can form a plurality of regions of different materials on the bonding surface CPf, for example. That is, a region containing an insulating material and a region containing a metal can be formed on the bonding surface CPf of the chip CP. Figure 2As shown, the chip supply device 10 has a chip supply unit 11. The chip supply unit 11 has a holding frame 112 for holding a sheet TE on which a plurality of chips CP are pasted, a frame holding unit 119 for holding the holding frame 112, a picking mechanism 111 for picking up one chip CP from a plurality of chips CP, and a cover 114. In addition, the chip supply unit 11 has a holding frame driving unit 113 for driving the holding frame 112 in the XY direction or in a direction of rotation around the Z axis. The frame holding unit 119 holds the holding frame 112 in a posture in which the surface of the sheet TE on which the plurality of chips CP are pasted is on the vertically upper (+Z direction) side. The holding frame 112 and the frame holding unit 119 constitute a sheet holding unit for holding the sheet TE on the opposite side of the bonding surface CPf side pasted to each of the plurality of chips CP in a posture in which the bonding surface CPf is facing the vertically upper side.

[0049] The pickup mechanism 111 makes a chip CP detached from the sheet TE by cutting out one chip CP from the side opposite to the side of the chips CP of the sheet TE. Here, the pickup mechanism 111 cuts out the chip CP by holding the peripheral portion of the third portion which is different from the central portion of the first portion held by the head 33H described later as the side opposite to the bonding surface CPf of the chip CP. The pickup mechanism 111 has a needle 111a, such as Figure 2 As shown by the arrow AR14, it can move in the vertical direction. The cover 114 is configured to cover the vertical upper part of the plurality of chips CP, and a hole 114a is provided in the portion opposite to the picking mechanism 111. There are, for example, four needles 111a. However, the number of needles 111a may be three, or may be more than five. The picking mechanism 111 supplies the chip CP by inserting the needle 111a into the sheet TE from the vertical lower part (-Z direction) of the sheet TE and lifting the chip CP vertically upward (+Z direction). Then, each chip CP attached to the sheet TE protrudes one by one to the upper part of the cover 114 through the hole 114a of the cover 114 through the needle 111a, and is delivered to the chip conveying device 39. The retaining frame driving unit 113 changes the position of the chip CP located vertically above the needle 111a by driving the retaining frame 112 in the XY direction or in the direction of rotation around the Z axis.

[0050] The chip conveying device (also called a turntable) 39 is a second object conveying device for conveying the chip CP supplied from the chip supply unit 11 to the transfer position Pos1, which is a transfer position for transferring the chip CP to the head 33H of the bonding unit 33 of the bonding device 30. Figure 1As shown, the chip conveying device 39 has two long plates 391, an arm 394, a chip holding portion 393 provided at the top end of the arm 394, and a plate driving portion 392 that simultaneously rotates and drives the two plates 391. The two plates 391 are long rectangular box-shaped, and one end thereof rotates with the other end located between the chip supply portion 11 and the head 33H as a base point. The two plates 391 are configured such that, for example, their long dimension directions are at an angle of 90 degrees to each other. It should be noted that the number of plates 391 is not limited to two, and may be three or more.

[0051] like Figure 3A As shown, the chip holding portion 393 is a second object holding portion provided at the top end of the arm 394 and having two legs 393a for holding the chip CP. Figure 3B As shown, the plate 391 can accommodate the long arm 394 inside. In addition, an arm driving unit 395 is provided inside the plate 391 to drive the arm 394 along the long dimension of the plate 391. Thus, the chip conveying device 39 can make the top end of the arm 394 protrude from the outside of the plate 391 or make the top end of the arm 394 sink into the inside of the plate 391 through the arm driving unit 395. Figure 3B As shown by the arrow AR25, the chip conveying device 39 causes the arm 394 to sink into the plate 391 when the plate 391 is rotated, and the chip holding portion 393 is stored inside the plate 391. Thereby, the adhesion of particles to the chip CP during transportation is suppressed. It should be noted that adsorption grooves (not shown) may also be provided on the two leg pieces 393a. In this case, the chip CP is adsorbed and held on the leg piece 392a, so that the chip CP can be conveyed without positional displacement. In addition, in order to prevent the chip CP from flying out due to the centrifugal force generated when the plate 391 rotates, a protrusion (not shown) may also be provided on the top end of the leg piece 393a.

[0052] Here, if Figure 1 As shown, the pickup mechanism 111 and the head 33H are arranged in a position in the Z-axis direction that overlaps with the trajectory OB1 drawn by the tip of the arm 394 when the plate 391 rotates. Figure 1 As shown by arrow AR1 , when the chip CP is received from the pickup mechanism 111 , the chip transport device 39 transports the chip CP to a transfer position Pos1 overlapping with the head 33H by rotating the plate 391 about the axis AX.

[0053] The bonding device 30 is a die bonding device including a stage unit 31, a bonding section 33 including a head 33H, and a head driving section 36 for driving the head 33H. Figure 4AAs shown, the head 33H has a chip tool 411, a head body 413, a chip support part 432a and a support part driving part 432b. The chip tool 411 is formed of silicon (Si), for example. The head body 413 has: a holding mechanism 440 having an adsorption part for adsorbing and holding the chip CP on the chip tool 411; and an adsorption part (not shown) for fixing the chip tool 411 to the head body 413 by vacuum adsorption. In addition, a ceramic heater, a coil heater, etc. are built into the head body 413. The chip tool 411 has: a through hole 411a formed at a position corresponding to the holding mechanism 440 of the head body 413; and a through hole 411b, and the chip support part 432a is inserted into the inner side of the through hole 411b.

[0054] The chip support part 432a is, for example, a cylindrical adsorption column, and is a component support part provided at the top end of the head 33H and movable in the vertical direction. The chip support part 432a supports the central part of the chip CP opposite to the bonding surface CPf side as the first part. Figure 4B As shown, the chip support portion 432a is provided in the center.

[0055] The support driving unit 432b drives the chip support 432a in the vertical direction, and in a state where the chip CP is placed on the top end of the chip support 432a, the chip CP is adsorbed to the top end of the chip support 432a by decompressing the inner side of the chip support 432a. The support driving unit 432b is located at a transfer position to the head 33H in a state where the chip holding unit 393 of the chip conveying device 39 holds the chip CP (see Figure 1 In the state where the center of the chip CP is supported by the top end of the chip support part 432a, the chip support part 432a is moved vertically upward from the chip holding part 393. Thus, the chip CP is transferred from the chip holding part 393 of the chip conveying device 39 to the head 33H.

[0056] The head driving unit 36 ​​moves the head to the transfer position Pos1 (see Figure 2) moves the head 33H that holds the chip CP transferred from the substrate WT vertically upward (in the +Z direction) to bring the head 33H close to the stage 315 and mount the chip CP on the mounting surface WTf of the substrate WT. In more detail, the head driving unit 36 ​​moves the head 33H that holds the chip CP vertically upward (in the +Z direction) to bring the head 33H close to the stage 315 and bring the chip CP into contact with the mounting surface WTf of the substrate WT so as to bond the chip CP to the substrate WT. Here, the mounting surface WTf of the substrate WT and the bonding surface CPf of the chip CP bonded to the substrate WT are activated by the activation treatment device 60. In addition, after the activation treatment is applied to the mounting surface WTf of the substrate WT, the mounting surface WTf of the substrate WT is cleaned with water by the cleaning device 85. Therefore, by bringing the bonding surface CPf of the chip CP into contact with the mounting surface WTf of the substrate WT, the chip CP is bonded to the substrate WT by so-called hydrophilization via the hydroxyl group (OH group).

[0057] The stage unit 31 includes: a stage 315 for holding the substrate WT in a posture in which the mounting surface WTf of the substrate WT on which the chip CP is mounted faces vertically downward (-Z direction); and a stage driving unit 320 for driving the stage 315. The stage 315 can move in the X direction, the Y direction, and the rotation direction. Thus, the relative positional relationship between the bonding portion 33 and the stage 315 can be changed, and the mounting position of each chip CP on the substrate WT can be adjusted.

[0058] The activation processing device 60 performs activation processing on the mounting surface WTf of the substrate WT or the bonding surface CPf of the chip CP. The activation processing device 60 arranges the substrate WT or the holding frame 112 holding the sheet TE with the chip CP attached thereto on a processing surface in a non-opposing manner to perform activation processing. That is, the activation processing device 60 does not perform activation processing in a state where the two substrates WT or the holding frame 112 holding the sheet TE with the two chips CP attached thereto are placed in opposition. If the processing is performed in an opposing configuration, the material of the substrate WT or chip CP on one side will adhere to the chip CP or substrate WT on the other side, resulting in a mixture of multiple materials. Figure 5 As shown, the activation treatment device 60 includes a chamber 64, a support portion 62 that supports the holding frame 112, a particle beam source 61, a beam source conveying portion 63, and a radical source 67. The chamber 64 is connected to a vacuum pump 652 via an exhaust pipe 651. Then, when the vacuum pump 652 is operated, the gas in the chamber 64 is discharged to the outside of the chamber 64 through the exhaust pipe 651, and the gas pressure in the chamber 64 is reduced (decompressed).

[0059] The support portion 62 includes: a frame holding portion 621, which is frame-shaped and holds the holding frame 112 inside; a cover 622; and a frame holding portion driving portion 623, which supports the frame holding portion 621 and holds the holding frame 112 inside. Figure 5The frame holding portion 621 is driven to rotate around an axis orthogonal to the thickness direction of the frame holding portion 621 as indicated by the arrow AR33. The support portion 62 is equivalent to an object support portion that supports a holding frame 112 that holds a sheet TE to which a chip CP as an object is attached. It constitutes a chip holding portion that holds the chip CP. In addition, the support portion 62 supports the substrate WT in a state where the periphery of the substrate WT is held by the frame holding portion 621 when the substrate WT has been inserted. The support portion 62 supports the holding frame 112 in a state where the holding frame 112 holding the sheet TE to which the chip CP is attached is not arranged oppositely, but is set on one processing surface. The cover 622 is formed of, for example, glass, and covers the area outside the portion to which the chip CP is attached on one side of the sheet TE to which the chip CP is attached and the holding frame 112 when the holding frame 112 holding the sheet TE to which the chip CP is attached is held by the frame holding portion 621. Here, when the plurality of chips CP are chips cut from a substrate (not shown) that is circular when viewed from above, they are attached to a circular area of ​​the sheet TE when viewed from above. In this case, the cover 622 is a cover in the shape of an area outside the circular area of ​​the sheet TE to which the plurality of chips CP are attached when viewed from above. Thus, the particle beam source 61 is prevented from irradiating the portion of the sheet TE other than the portion to which the chips CP are attached with a particle beam.

[0060] The particle beam source 61 is, for example, a fast atom beam (FAB) source, and includes a discharge chamber 612, an electrode 611 disposed in the discharge chamber 612, a beam source driving unit 613, and a gas supply unit 614 for supplying nitrogen gas into the discharge chamber 612. A FAB radiation port 612a for releasing neutral atoms is provided on the peripheral wall of the discharge chamber 612. The discharge chamber 612 is formed of a carbon material. Here, the discharge chamber 612 is in the shape of a long box, and a plurality of FAB radiation ports 612a are arranged side by side in a straight line along the long dimension direction thereof. The beam source driving unit 613 includes: a plasma generating unit (not shown) for generating plasma of nitrogen gas in the discharge chamber 612; and a DC power supply (not shown) for applying a DC voltage between the electrode 611 and the peripheral wall of the discharge chamber 612. The beam source driving unit 613 applies a DC voltage between the peripheral wall of the discharge chamber 612 and the electrode 611 in a state where plasma of nitrogen gas is generated in the discharge chamber 612. At this time, the nitrogen ions in the plasma are attracted to the peripheral wall of the discharge chamber 612. At this time, when the nitrogen ions heading toward the FAB radiation port 612a pass through the FAB radiation port 612a, they receive electrons from the peripheral wall of the discharge chamber 612 formed of the carbon material at the outer periphery of the FAB radiation port 612a. Then, the nitrogen ions become electrically neutralized nitrogen atoms and are released to the outside of the discharge chamber 612. However, a part of the nitrogen ions cannot receive electrons from the peripheral wall of the discharge chamber 612, and are released to the outside of the discharge chamber 612 while remaining in the state of nitrogen ions.

[0061] Here, the particle beam source 61 is set such that the incident angle of the particle beam relative to at least one of the imaginary planes S1 including the bonding surfaces CPf of at least one chip CP attached to the sheet TE is greater than 30 degrees and less than 80 degrees. That is, the angle (incident angle) θ1 formed by the irradiation axis J1 of the particle beam and the normal direction N1 of the imaginary plane S1 is set to be greater than 30 degrees and less than 80 degrees. In addition, as Figure 6 As shown, the incident angle θ1 of the particle beam is set so that, if the interval between adjacent chips CP is L1 and the thickness of the chip CP is T1, the relationship of the following equation (1) holds.

[0062] [Formula 1]

[0063]

[0064] This prevents the particle beam from directly irradiating the sheet TE. Therefore, generation of impurities from the sheet TE due to irradiation of the particle beam to the sheet TE is prevented, and thus there is an advantage that damage to the bonding surface CPf of the chip CP caused by impurities generated from the sheet TE is prevented.

[0065] The beam source transport unit 63 includes: a support rod 631 which is long and inserted into a hole 64a provided in the chamber 64 and supports the particle beam source 61 at one end; a support body 632 which supports the support rod 631 at the other end thereof; and a support body driving unit 633 which drives the support body 632. In addition, the beam source transport unit 63 includes a bellows 634 which is sandwiched between the outer periphery of the hole 64a of the chamber 64 and the support body 632 in order to maintain the vacuum degree in the chamber 64. Figure 5 As shown by the arrow AR31, the support body driving unit 633 drives the support body 632 in the direction of inserting and removing the support rod 631 into the chamber 64. Figure 5 As shown by arrow AR32, the position of the particle beam source 61 is changed in the chamber 64. Here, the beam source transport unit 63 moves the particle beam source 61 in a direction orthogonal to the arrangement direction of the plurality of FAB radiation ports 612a.

[0066] Furthermore, the particle beam source 61 has a plurality of FAB radiation ports 612a arranged side by side in a straight line as described above. And, the particle beam source 61 moves in a direction orthogonal to the arrangement direction of the plurality of FAB radiation ports 612a. Thus, the shape of the area irradiated with the particle beam becomes a rectangular shape. In contrast, in the case where the plurality of chips CP are chips cut from a substrate (not shown) that is circular when viewed from above, the area becomes a state in which the area in which the sheet TE is viewed from above is circular. Therefore, if the plurality of chips CP that are affixed to the sheet TE are to be irradiated with a particle beam as a whole, it is necessary to set the area irradiated with the particle beam to a rectangular area including the area in which the plurality of chips CP are affixed to the sheet TE that is circular when viewed from above. In this case, in the aforementioned configuration without the cover 622, the particle beam is irradiated to the area outside the plurality of chips CP of the sheet TE or the retaining frame 112, thereby easily generating impurities from the sheet TE. In contrast, in the present embodiment, the cover 622 covers the area outside the plurality of chips CP of the sheet TE or the retaining frame 112. Thus, the particle beam irradiated toward the region outside the plurality of chips CP of the sheet TE or the holding frame 112 is blocked, and generation of impurities from the sheet TE or the holding frame 112 is suppressed.

[0067] The radical source 67 may be an ICP (Inductively Coupled Plasma) plasma source having a plasma chamber 671, a glass window 674, a capture plate 675, a waveguide 673, and a magnetron 672. The plasma chamber 671 is connected to the waveguide 673 via the glass window 674. In addition, the radical source 67 has a gas supply unit 677 for supplying nitrogen gas into the plasma chamber 671 via a supply pipe 676. The microwave generated by the magnetron 672 is introduced into the plasma chamber 671 through the waveguide 673. As the magnetron 672, a magnetron that generates microwaves with a frequency of, for example, 2.45 GHz may be used. In this case, the power supplied from the magnetron 672 to the plasma chamber 671 is set to, for example, 2.5 kW. Furthermore, when the microwave is introduced from the waveguide 673 in a state where the nitrogen gas is introduced into the plasma chamber 671, plasma PLM is formed in the plasma chamber 671 by the microwave. The capture plate 675 captures ions included in the plasma PLM and allows only radicals to flow downward into the chamber 64. In other words, plasma is generated in the plasma chamber 671, and only radicals included in the plasma flow downward to the bottom of the plasma chamber 671.

[0068] It should be noted that the radical source 67 is not limited to a structure including a magnetron 672 and a waveguide 673, and may also be a structure including, for example, a flat electrode provided on a glass window 674 and a high-frequency power supply electrically connected to the flat electrode. In this case, as the high-frequency power supply, for example, a high-frequency power supply that applies a high-frequency bias of 27 MHz may be used. Furthermore, the power supplied from the high-frequency power supply to the plasma chamber 671 is set to, for example, 250 W. In addition, when irradiating the particle beam, the pressure in the chamber 64 is evacuated to 10 V using, for example, a turbomolecular pump. -3 However, during the radical treatment, the pressure in the chamber 64 is increased to about several tens of Pa.

[0069] The control unit 90 includes an MPU (Micro Processing Unit), a main storage unit, an auxiliary storage unit, an interface, and a bus connecting the various units. The main storage unit is composed of a volatile memory and is used as a work area of ​​the MPU. The auxiliary storage unit is composed of a non-volatile memory and stores programs executed by the MPU. In addition, the auxiliary storage unit also stores information indicating the first distance and the second distance described later. Figure 7 As shown, the control unit 90 is connected to the head driving unit 36, the stage driving unit 320, the plate driving unit 392, the arm driving unit 395, the pickup mechanism 111, the holding frame driving unit 113, the cleaning head 851, the stage driving unit 853, the beam source driving unit 613, the beam source conveying unit 63, the frame holding unit driving unit 623, the magnetron 672, and the conveying robot 71. In addition, the MPU reads the program stored in the auxiliary storage unit into the main storage unit and executes it, thereby outputting control signals to the head driving unit 36, the stage driving unit 320, the plate driving unit 392, the arm driving unit 395, the pickup mechanism 111, the holding frame driving unit 113, the cleaning head 851, the stage driving unit 853, the beam source driving unit 613, the beam source conveying unit 63, the frame holding unit driving unit 623, the magnetron 672, and the conveying robot 71 through the interface.

[0070] Next, refer to Figure 8 to Figure 1 2 The operation of the chip bonding system 1 of this embodiment will be described. It should be noted that the substrate WT and the holding frame 112 holding the sheet TE to which the chip CP is attached are loaded from the loading and unloading unit 80. First, Figure 8As shown, the chip bonding system 1 performs a substrate mounting surface activation process (step S1) for performing activation treatment on the mounting surface WTf of the substrate WT by placing the substrate WT placed from the loading and unloading unit 80 into the activation treatment device 60. Here, the activation treatment device 60 first irradiates the mounting surface WTf with a particle beam containing nitrogen atoms from the particle beam source 61 while the mounting surface WTf of the substrate WT is supported on the support portion 62 in a posture facing vertically downward. At this time, the power supplied to the particle beam source 61 is set to 1 kV, 100 mA, for example. In addition, the flow rate of nitrogen gas introduced into the discharge chamber 612 of the particle beam source 61 is set to 100 sccm, for example. Moreover, the particle beam is irradiated from the particle beam source 61 to the mounting surface WTf of the substrate WT, and the particle beam source 61 is reciprocated once at a speed of 1.2 mm / sec to 14.0 mm / sec. Next, the activation treatment device 60 reverses the substrate WT held in the frame holding portion 621 so that the mounting surface WTf of the substrate WT is in a posture facing vertically upward. Then, the activation treatment device 60 irradiates nitrogen radicals to the mounting surface WTf of the substrate WT through the radical source 67. Here, the power supplied from the magnetron 672 to the plasma chamber 671 in the radical source 67 is set to 2.5kW, for example. It should be noted that, in the case where the radical source 67 is composed of a flat electrode provided on the aforementioned glass window 674 and a high-frequency power supply electrically connected to the flat electrode, the power supplied from the high-frequency power supply to the plasma chamber 671 is set to 250W, for example. In addition, the flow rate of nitrogen gas introduced into the plasma chamber 671 is set to 100sccm, for example. Moreover, the duration of the irradiation of the radicals to the mounting surface WTf of the substrate WT is set to 15sec, for example. For example, it is preferred that a particle beam be irradiated to the mounting surface WTf of the substrate WT when metal electrodes and insulating films are provided on both the mounting surface WTf of the substrate WT and the bonding surface CPf of the chip CP.

[0071] Next, the chip bonding system 1 performs a water cleaning process (step S2) in which the substrate WT subjected to the activation treatment is placed from the activation treatment device 60 into the cleaning device 85 to clean the mounting surface WTf of the substrate WT with water. Here, the cleaning device 85 rotates the stage 852 by the stage driving unit 853 while the substrate WT is supported on the stage 852, and discharges water from the cleaning head 851 toward the substrate WT, thereby cleaning the substrate WT with water. As a result, a large number of hydroxyl groups (OH groups) or water molecules are attached to the mounting surface WTf of the substrate WT.

[0072] Next, the chip bonding system 1 performs a substrate preparation process (step S3) for holding the substrate WT on the table 315 of the bonding device 30 and bonding the chip CP to the substrate WT. At this time, the conveying robot 71 receives the substrate WT from the cleaning device 85 with the mounting surface WTf of the substrate WT facing vertically upward. Thereafter, the conveying robot 71 inverts the received substrate WT and holds the substrate WT with the mounting surface WTf of the substrate WT facing vertically downward. Then, the conveying robot 71 moves the substrate WT to the table 315 of the bonding device 30 while holding the mounting surface WTf of the substrate WT facing vertically downward.

[0073] Afterwards, the chip bonding system 1 executes a chip bonding surface activation process (step S4) of activating the bonding surface CPf of the chip CP by placing the holding frame 112 holding the sheet TE on which the chip CP is pasted, which is placed from the loading and unloading unit 80, into the activation processing device 60. Here, first, the activation processing device 60 makes the holding frame 112 be in a posture where the side of the sheet TE on which the chip CP is pasted is opposite to the particle beam source 61 side, that is, supported on the support portion 62 in a posture facing vertically downward. Then, the activation processing device 60 executes a first activation process of irradiating the bonding surface CPf of each chip CP pasted to the sheet TE with a particle beam from the particle beam source 61. Here, the activation processing device 60 only prepares one holding frame 112 for holding a sheet TE on which a plurality of chips CP are pasted, and irradiates the chip CP pasted to the sheet TE held in the prepared holding frame 112 with a particle beam. In addition, for example, Fig.9A and Fig. 9B As shown by the arrow AR34, the activation processing device 60 moves the particle beam source 61 in the X-axis direction while irradiating the bonding surface CPf of the chip CP with a particle beam. Here, the activation processing device 60, for example, moves the particle beam source 61 in the +X direction while irradiating the bonding surface CPf of all chips CP attached to the sheet TE with a particle beam, and then moves the particle beam source 61 in the -X direction while irradiating the bonding surface CPf of the chip CP with a particle beam. In addition, the moving speed of the particle beam source 61 is set to, for example, 1.2 mm / sec to 14.0 mm / sec. Moreover, Fig.9A The angle (incident angle) θ1 formed by the irradiation axis J1 of the particle beam shown and the normal direction N1 of the imaginary plane S1 is set to be greater than 30 degrees and less than 80 degrees. In addition, the power supplied to the particle beam source 61 is set to 1 kV, 100 mA, for example. And, the flow rate of nitrogen gas introduced into the discharge chamber 612 of the particle beam source 61 is set to 100 sccm, for example. At this time, the impurity CPA1 generated from the chip CP or the sheet TE is blown away in a direction away from the chip CP and does not return to the bonding surface CPf side of the chip CP.

[0074] Then, if Fig. 10A As shown by the arrow AR36, the activation treatment device 60 reverses the holding frame 112 held by the frame holding portion 621 so that the bonding surface CPf of the chip CP attached to the sheet TE is oriented vertically upward. Fig. 10B As shown by the arrow AR37, the activation processing device 60 performs a second activation process of irradiating nitrogen radicals to the bonding surface CPf of the chip CP through the radical source 67. Here, the power supplied to the plasma chamber 671 in the radical source 67, the flow rate of the nitrogen gas introduced into the plasma chamber 671, and the irradiation time of the nitrogen radicals are set to the same conditions as the aforementioned substrate mounting surface activation process.

[0075] return Figure 8 Next, the chip bonding system 1 performs a chip preparation process (step S5) for holding the holding frame 112 holding the sheet TE with the chip CP attached thereto in the chip supply section 11 of the chip supply device 10 and bonding the chip CP to the substrate WT. At this time, the conveying robot 71 receives the holding frame 112 holding the sheet TE from the activation processing device 60 with the bonding surface CPf of the chip CP facing vertically upward. Afterwards, the conveying robot 71 directly transfers the received holding frame 112 to the chip supply section 11 of the chip supply device 10.

[0076] Next, the chip bonding system 1 performs a chip bonding process (step S6) of bonding the chip CP to the substrate WT by bringing the chip CP whose bonding surface CPf is activated by the activation processing device 60 into contact with the mounting surface WTf of the substrate WT. Here, the chip bonding system 1 first makes a plate 391 of the chip conveying device 39 be in a state facing the chip supply part 11. Next, the chip bonding system 1 performs a chip supply process (second object supply process) of cutting out a chip CP from the opposite side of the plurality of chip CP sides of the sheet TE by moving the pickup mechanism 111 vertically upward, thereby making the chip CP detached from the sheet TE. In this state, the chip conveying device 39 makes the arm 394 protrude from the plate 391. At this time, the needle 111a of the pickup mechanism 111 is arranged between the two legs 393a of the chip holding part 393. In this way, as Fig.11A and Fig. 11B As shown in FIG. 1 , the chip CP is in a state where it can be transferred to the chip holding portion 393 . When the pickup mechanism 111 is moved vertically downward from this state, the chip CP is transferred to the chip holding portion 393 .

[0077] Next, the die bonding system 1 moves the plate 391 toward Fig.11A The direction of the arrow AR1 is reversed. Fig. 12AAs shown, the chip holding portion 393 at the top end of the arm 394 of the chip conveying device 39 is arranged at the transfer position Pos1 vertically above the head 33H of the bonding portion 33. That is, the chip conveying device 39 conveys the chip CP received from the chip supply portion 11 to the transfer position Pos1, which is the transfer position for transferring the chip CP to the head 33H. Then, the head driving portion 36 moves the bonding portion 33 vertically upward to make the head 33H approach the chip holding portion 393 of the chip conveying device 39. Next, the support portion driving portion 432b moves the chip support portion 432a vertically upward. As a result, Fig. 12B As shown in the figure, the chip CP held in the chip holding part 393 is arranged vertically above the chip holding part 393 in a state supported by the upper end of the chip support part 432a. Next, the chip conveying device 39 causes the arm 394 to sink into the plate 391. Thereafter, the support part driving part 432b causes the chip support part 432a to move vertically downward. Thus, the chip CP is held at the top end of the head 33H.

[0078] After that, the chip bonding system 1 performs alignment to correct the relative positional deviation between the chip CP and the substrate WT by driving the stage 315 and rotating the bonding portion 33. Then, the chip bonding system 1 bonds the chip CP to the substrate WT by raising the head 33H. Here, the mounting surface WTf of the substrate WT and the bonding surface CPf of the chip CP are in a state of hydrophilic bonding via hydroxyl groups (OH groups).

[0079] Then, after the above series of steps are completed, the substrate WT with the chip CP mounted thereon is taken out from the chip bonding system 1, and then the substrate WT with the chip CP mounted thereon is put into a heat treatment device (not shown) for heat treatment. The heat treatment device performs heat treatment on the substrate WT at a temperature of 350° C. for 1 hour, for example.

[0080] Next, the evaluation results of the bonding strength between the chip CP and the substrate WT bonded by the chip bonding system of the present embodiment are described. Here, the evaluation results of the bonding strength between the chip CP and the substrate WT bonded by the chip bonding method of the present embodiment and the evaluation results of the bonding strength between the chip CP and the substrate WT bonded by the three chip bonding methods of Comparative Example 1, Comparative Example 2, and Comparative Example 3 are described. First, the chip bonding methods of Comparative Example 1, Comparative Example 2, and Comparative Example 3 are described.

[0081] In use Figure 8 The chip bonding surface activation process described above is used Fig.13The chip bonding method of Comparative Example 1 is different from the chip bonding method of the embodiment in that the activation treatment device 9060 is shown. The activation treatment device 9060 includes a chamber 9064, a stage 9621 supporting the holding frame 112, a high-frequency power supply 9061 for applying a high-frequency bias, and a gas supply unit 677 for supplying nitrogen gas into the chamber 9064 via a supply pipe 676. Fig.13 In the embodiment, the same components as those of the activation treatment device 60 are marked with Figure 5 Same figure mark. The high-frequency power supply 9061 applies a high-frequency bias to the chip CP attached to the sheet TE, and the sheet TE is held and supported by the holding frame 112 supported by the table 9621. As the high-frequency power supply 9061, for example, a high-frequency power supply that generates a high-frequency bias of 13.56 MHz. In this way, a high-frequency bias is applied to the chip CP by the high-frequency power supply 9061, thereby generating a sheath region PLM9 in which ions with kinetic energy repeatedly collide with the chip CP and the sheet TE near the bonding surface CPf of the chip CP and the sheet TE. Then, the bonding surface CPf of the chip CP is activated by the ions with kinetic energy present in the sheath region PLM9. Here, the impurities CPA9 generated from the chip CP or the sheet TE that are present in the sheath region PLM9 and ionized also collide with the bonding surface CPf of the chip CP.

[0082] In use Figure 8 The chip bonding method of Comparative Example 2 is different from the chip bonding method of the embodiment in that, in the chip bonding surface activation process described, the activation treatment device provided with the radical source 67 described in the embodiment is used for the aforementioned activation treatment device 9060. That is, in the chip bonding method of Comparative Example 2, after the bonding surface CPf of the chip CP is activated by applying a high-frequency bias to the chip CP, nitrogen radicals are irradiated to the bonding surface CPf of the chip CP.

[0083] In use Figure 8 The chip bonding method of Comparative Example 3 is different from the chip bonding method of the embodiment in that, in the chip bonding surface activation process described above, only the particle beam is irradiated onto the bonding surface CPf of the chip CP by the activation treatment device 60, but the nitrogen radicals are not irradiated onto the bonding surface CPf of the chip CP. It should be noted that, in Comparative Examples 1 to 3 and the chip bonding method of the embodiment, the activation treatment device used for irradiating the nitrogen radicals onto the bonding surface CPf of the chip CP is Figure 5 The activation treatment device 60 shown uses a structure including a flat electrode provided on a glass window 674 and a high-frequency power supply electrically connected to the flat electrode instead of the magnetron 672 and the waveguide 673.

[0084] Next, the results of evaluating the bonding strength of the chip CP and the substrate WT bonded to each other by the chip bonding methods of Comparative Examples 1 to Comparative Examples 3 and the chip bonding method of the embodiment are described. Here, as the substrate WT, a glass (SiO2) substrate is used. In addition, as the chip CP, a chip in which only SiON is exposed on the bonding surface CPf, a chip in which SiON and Cu are exposed on the bonding surface CPf, a chip in which resin and Cu are exposed on the bonding surface CPf, a chip in which SiON and an alloy with lead and tin as main components (hereinafter referred to as "solder") are exposed on the bonding surface CPf, and a chip in which resin and solder are exposed on the bonding surface CPf are used. That is, as the chip CP, a chip in which only an area containing SiON exists on the bonding surface CPf, a chip in which an area containing SiON and an area containing Cu are formed on the bonding surface CPf, a chip in which an area containing resin and an area containing Cu are formed on the bonding surface CPf, a chip in which an area containing SiON and an area containing solder are formed on the bonding surface CPf, and a chip in which an area containing resin and an area containing solder are formed on the bonding surface CPf. The bonding strength was evaluated for 40 types of samples 1 to 40 different in combination of the type of gas used for the activation process of the bonding surface CPf of the chip CP, the employed die bonding method, and the type of chip CP.

[0085] In addition, in the chip joint surface activation process of Comparative Examples 1 and 2, the bias power of the high-frequency bias applied to the chip CP is set to 110W. And the time for continuously applying the high-frequency bias to the chip CP is set to 30 seconds. In addition, the vacuum degree in the chamber 64 in the chip joint surface activation process of Comparative Examples 1 and 2 is set to 50Pa in all cases of the sample. On the other hand, the vacuum degree in the chamber 64 during the particle beam irradiation in the chip joint surface activation process of Comparative Example 3 and the embodiment is set to 5.0×10 -3 Pa. In the chip bonding surface activation process of Comparative Example 2 and the embodiment, the power supplied from the high-frequency power supply to the plasma chamber 671 when irradiating nitrogen radicals was set to 250 W.

[0086] In addition, for any sample after completion of the bonding of the chip CP to the substrate WT by the chip bonding methods of Comparative Examples 1 to Comparative Examples 3 and the chip bonding method of the embodiment, the substrate WT was subjected to heat treatment using a heat treatment device at a temperature of 350°C for 1 hour. For each of the 40 samples 1 to 40, the materials exposed on the bonding surface CPf of the chip CP and the treatment conditions in the chip bonding surface activation process are summarized and shown in the following Table 1. It should be noted that the "Material Exposed to the Bonding Surface" column in Table 1 shows the material exposed on the bonding surface CPf of the chip CP for each sample. In addition, the "Chip Bonding Surface Activation Process" column shows the activation treatment method used in the chip bonding surface activation process for each sample. Specifically, "Comparative Example 1" indicates that the chip bonding surface activation process of the aforementioned Comparative Example 1 is used, "Comparative Example 2" indicates that the chip bonding surface activation process of the aforementioned Comparative Example 2 is used, and "Comparative Example 3" indicates that the chip bonding surface activation process of the aforementioned Comparative Example 3 is used. In addition, "Implementation Method" indicates that the aforementioned use is used. Figure 8 The chip bonding surface activation process of the embodiment described above. In addition, for samples 1 to 20, the gas introduced into the chamber 9064 when a high-frequency bias is applied to the chip CP in the chip bonding surface activation process or the gas introduced into the discharge chamber 612 of the particle beam source 61 during particle beam irradiation is set to nitrogen. On the other hand, for samples 21 to 40, the gas introduced into the chamber 9064 when a high-frequency bias is applied to the chip CP in the chip bonding surface activation process or the gas introduced into the discharge chamber 612 of the particle beam source 61 during particle beam irradiation is set to argon (Ar) gas.

[0087] [Table 1]

[0088]

[0089] In addition, the bonding strength between the chip CP and the substrate WT of samples 1 to 40 is evaluated by measuring the bonding strength (converted into surface energy) using a crack opening method in which a blade is inserted. In the crack opening method, first, the peeling length of the chip CP when a blade such as a razor blade is inserted from the periphery of the chip CP of the mutually bonded chip CP and the substrate WT to the bonding part is measured. As the blade, for example, a blade with a thickness of 100 μm is used. In addition, the peeling length from the contact point of the blade when the blade is inserted into four places of the peripheral portion of the chip CP bonded to the substrate WT is measured. Then, for each of the four places of the peripheral portion of the chip CP, the strength of the bonding interface between the chip CP and the substrate WT is calculated based on the peeling length and converted into surface energy per unit area, thereby evaluating the bonding strength between the chip CP and the substrate WT. It should be noted that when calculating the bonding strength (converted into surface energy) Eb based on the peeling length, the relationship of the following formula (2) is used.

[0090] [Formula 2]

[0091]

[0092] Here, Y represents Young's modulus, Ts represents the thickness of the chip CP and the substrate WT, and Tb represents the thickness of the blade. In the evaluation of the bonding strength between the chip CP and the substrate WT of samples 1 to 40, the Young's modulus Y was set to 6.5×10 10 [N / m 2 ], the thickness Ts of the chip CP and the substrate WT is set to 0.0011m (1.1mm), and the thickness Tb of the blade is set to 0.0001m (0.1mm). According to the calculation formula, the shorter the peeling length, the greater the bonding strength.

[0093] Tables 2 and 3 show the average values ​​of the bonding strength (converted to surface energy) at four locations of the peripheral portion of the chip CP of each of Samples 1 to 40. It should be noted that the "Sample Name" column in Tables 2 and 3 corresponds to Samples 1 to 40 in the aforementioned Table 1, respectively. In addition, the greater the bonding strength (converted to surface energy) calculated for each sample, the greater the bonding strength between the chip CP and the substrate WT, and the case of bulk damage is recorded as "bulk damage". In addition, in the "Can it be bonded" column in Tables 2 and 3, the case where the chip CP can be bonded to the substrate WT is set to "○", and the case where the chip CP cannot be bonded to the substrate WT is set to "×". In addition, the bonding strength is calculated only for samples in which the chip CP can be bonded to the substrate WT.

[0094] [Table 2]

[0095]

[0096] [Table 3]

[0097]

[0098] According to the evaluation results of Samples 2 to 5, Samples 7 to 10, Samples 22 to 25, and Samples 27 to 30 in Tables 2 and 3, it can be seen that when the chip joint surface activation process of Comparative Examples 1 and 2 is adopted, when Cu, resin or solder is exposed on the joint surface CPf of the chip CP, the chip CP cannot be bonded to the substrate WT. Therefore, it can be imagined that when the chip joint surface activation process of Comparative Examples 1 and 2 is adopted, the damage to the joint surface CPf caused by the collision of impurities generated from Cu, resin or solder with the joint surface CPf is so great that the chip CP cannot be bonded to the substrate WT. However, according to the evaluation results of Samples 1, 6, 21, and 26, even when the chip joint surface activation process of Comparative Examples 1 and 2 is adopted, when only SiON is exposed on the joint surface CPf of the chip CP, the chip CP can be bonded to the substrate WT.

[0099] On the other hand, according to the evaluation results of samples 11 to 20 and samples 31 to 40 in Tables 2 and 3, when the chip joint surface activation process of Comparative Example 3 and the embodiment is adopted, the chip CP can be bonded to the substrate WT even when Cu, resin or solder is exposed on the joint surface CPf of the chip CP. It can be thought that this is because, when the joint surface CPf of the chip CP is activated by irradiating the joint surface CPf of the chip CP with a particle beam, a high-frequency bias is not applied to the chip CP, thereby suppressing the damage to the joint surface CPf caused by the collision of impurities generated from Cu, resin or solder with the joint surface CPf. Therefore, it can be said that when Cu, resin or solder is exposed on the joint surface CPf of the chip CP, in the chip joint surface activation process, the method of activating the joint surface CPf of the chip CP by irradiating a particle beam is important for achieving good bonding of the chip CP to the substrate WT.

[0100] Moreover, if the bonding strength of samples 21 to 30 is compared with the bonding strength of samples 31 to 40, it can be seen that the bonding strength of samples 21 to 30 is higher than that of samples 31 to 40. It can be seen that from the viewpoint of improving the bonding strength between the chip CP and the substrate WT, nitrogen gas is more preferable than Ar gas as the gas introduced into the discharge chamber 612 of the particle beam source 61 when the particle beam is irradiated on the bonding surface CPf of the chip CP. In this way, it can be imagined that the reason why the bonding strength between the chip CP and the substrate WT is improved when nitrogen gas is used compared with the case of using Ar gas is that Ar has a larger mass than nitrogen, so even if OH groups are generated on the bonding surface CPf of the chip CP, they will be scattered due to the collision of Ar. In addition, if the bonding strength of samples 21 to 25 is compared with the bonding strength of samples 26 to 30, it can be seen that the bonding strength of samples 21 to 25 is higher than that of samples 26 to 30. Therefore, from the viewpoint of improving the bonding strength between the chip CP and the substrate WT, it is preferable to irradiate the bonding surface CPf of the chip CP with nitrogen radicals after irradiating the bonding surface CPf of the chip CP with a particle beam.

[0101] It should be noted that, in the aforementioned samples 1 to 4, 6 to 9, 11 to 14, 16 to 19, 21 to 24, 25 to 29, 31 to 34, and 35 to 39, when the oxide SiON was changed to the oxide SiO2 and the nitride SiN for the same evaluation, the same results as above were obtained. It should be noted that, when oxygen is used instead of nitrogen, if metals such as Cu or solder exist on the bonding surface CPf of the chip CP, they are oxidized by oxygen, and the connection resistance between the chip CP and the substrate WT deteriorates. Similarly, even when plasma treatment is performed on the bonding surface CPf of the chip CP instead of irradiating the bonding surface CPf of the chip CP with a particle beam source 61 as described above, the best result is obtained when nitrogen is used. That is, it can be thought that: in terms of the use of nitrogen, even if metals such as Cu or solder exist on the bonding surface CPf of the chip CP, they will not be oxidized, so that OH groups can be generated most effectively on the bonding surface CPf of the chip CP.

[0102] As described above, according to the chip bonding system 1 of the present embodiment, in the activation processing device 60, the support portion 62 is maintained in a posture in which the side of the sheet TE to which the chip CP is attached is opposite to the particle beam source 61 side. Then, the particle beam source 61 irradiates the particle beam toward the bonding surface CPf of the chip CP in the state of being attached to the sheet TE. That is, the bonding surface CPf of the chip CP attached to the sheet TE is activated by irradiating the particle beam to the bonding surface CPf. Thus, the collision of impurities generated from the sheet TE or the chip CP due to the irradiation of the particle beam to the bonding surface CPf of the chip CP is suppressed, thereby suppressing the damage to the bonding surface CPf of the chip CP caused by the collision of impurities. Therefore, the occurrence of poor bonding between the chip CP and the substrate WT is suppressed.

[0103] In addition, in the chip bonding system 1 of the present embodiment, the chip CP to be bonded to the substrate WT may be a chip CP having a plurality of regions of different materials formed on its bonding surface CPf. In this case, the collision of impurities generated from the various regions of the bonding surface CPf of the chip CP due to the irradiation of the particle beam to the bonding surface CPf of the chip CP is suppressed, thereby suppressing the damage to the bonding surface CPf of the chip CP caused by the collision of the impurities.

[0104] In addition, in the chip bonding system 1 of the present embodiment, the particle beam source 61 is set so that the incident angle θ1 of the particle beam relative to at least one of the imaginary planes S1 including the bonding surfaces CPf of the plurality of chips CP attached to the sheet TE is not less than 30 degrees and not more than 80 degrees. Thus, the particle beam is prevented from irradiating the sheet TE through the gap between the adjacent chips CP, thereby preventing the generation of impurities from the sheet TE.

[0105] Furthermore, the activation treatment device 60 of the present embodiment has a cover 622 that covers the portion of the one side of the sheet TE to which the chip CP is pasted except for the portion to which the chip CP is pasted, while the holding frame 112 holding the sheet TE to which the chip CP is pasted is held by the frame holding portion 621. Thus, the generation of impurities from the sheet TE caused by irradiating the portion of the sheet TE except for the portion to which the chip CP is pasted is suppressed.

[0106] Furthermore, in the activation treatment device 60 of the present embodiment, when the particle beam is irradiated onto the bonding surface CPf of the chip CP, the support portion 62 supports the retaining frame 112 for retaining the sheet TE to which the chip CP is attached, with the bonding surface CPf of the chip CP facing vertically downward. Furthermore, the particle beam source 61 irradiates the particle beam onto the bonding surface CPf of the chip CP from vertically below the support portion 62. Thus, impurities generated by irradiating the sheet TE and the chip CP with the particle beam fall vertically downward due to gravity, thereby suppressing the attachment of impurities to the bonding surface CPf of the chip CP.

[0107] Moreover, the particle beam irradiated by the particle beam source 61 of the present embodiment toward the bonding surface CPf of the chip CP contains nitrogen. Thus, for example, in the aforementioned chip bonding surface activation process, the bonding strength between the chip CP and the substrate WT when the chip CP is bonded to the substrate WT can be improved compared to the configuration of irradiating with a particle beam containing Ar.

[0108] In addition, the activation treatment device 60 of the present embodiment also has a radical source for irradiating nitrogen radicals to the bonding surface CPf of the chip CP. Thus, for example, in the aforementioned chip bonding surface activation process, the bonding strength between the chip CP and the substrate WT when the chip CP is bonded to the substrate WT can be improved compared to the configuration of irradiating only a particle beam containing nitrogen.

[0109] Furthermore, in the case where the particle beam source 61 is, for example, an ion gun, the particle beam diffuses excessively, and the particle beam is also irradiated to the portion other than the holding frame 112 of the sheet TE on which the chip CP is pasted in the chamber 64. In this way, metal contamination is easily generated from the inner wall of the chamber 64. In particular, in the case where a hydrophilization treatment is performed in the activation treatment device 60 as in the present embodiment, it is not good for the metals to be mixed. In contrast, in the present embodiment, a high-speed particle beam source with high directivity is used as the particle beam source 61. Thus, it is suppressed that the particle beam is also irradiated to the portion other than the holding frame 112 of the sheet TE on which the chip CP is pasted in the chamber 64. In addition, the particle beam source 61 including the high-speed particle beam source scans and moves relative to the holding frame 112 near the holding frame 112 of the sheet TE on which the chip CP is pasted, thereby shielding the outer periphery of the plurality of chips CP pasted on the sheet TE1 in a circular area when viewed from above, so that the particle beam only irradiates the chips CP, which is effective.

[0110] Furthermore, when the particle beam source 61 is a high-speed atomic beam source and the discharge chamber 612 is formed of a carbon material, carbon powder is generated from the peripheral wall of the discharge chamber 612. Then, in the chip bonding surface activation process, when the particle beam source 61 is arranged vertically above the chip CP and the particle beam is irradiated from the vertical above the chip CP, the carbon powder generated from the peripheral wall of the discharge chamber 612 may fall and adhere to the bonding surface CPf of the chip CP. In contrast, according to the present embodiment, the particle beam source 61 is arranged vertically below the plurality of chips CP. As a result, the carbon powder generated in the particle beam source 61 is retained in the discharge chamber 612, and the scattering outside the discharge chamber 612 is suppressed, thereby suppressing the adhesion of the carbon powder to the bonding surface CPf of the chip CP. Therefore, the occurrence of poor bonding of the chip CP to the substrate WT is suppressed.

[0111] Although the embodiment of the present invention has been described above, the present invention is not limited to the above-mentioned embodiment. For example, the particle beam source 61 of the activation treatment device 60 may be an ion beam source that accelerates and releases nitrogen ions.

[0112] In the embodiment, an example of a chip bonding system 1 for bonding a chip CP to a substrate WT is described, but the present invention is not limited thereto, and may be, for example, a substrate bonding system for bonding substrates to each other. In this case, in the activation treatment device 60, the same process as the activation process described in the embodiment may be performed on the bonding surfaces of the respective substrates bonded to each other. For example, in the case where metal electrodes and insulating films are provided on the bonding surfaces of the two substrates, it is preferred to irradiate the bonding surfaces of the substrates with a particle beam for activation treatment.

[0113] In the embodiment, an example of the activation processing device 60 that moves the particle beam source 61 relative to the holding frame 112 holding the sheet TE with the chip CP attached thereto is described. However, the present invention is not limited thereto, and the particle beam source 61 may be fixed, and the holding frame 112 holding the sheet TE with the chip CP attached thereto may be moved. Alternatively, the particle beam source 61 and the holding frame 112 holding the sheet TE with the chip CP attached thereto may be moved in opposite directions to each other.

[0114] In the activation treatment device 60 of the embodiment, a water supply unit for supplying water gas into the chamber 64 may be provided. Here, the water supply unit may introduce water vapor into the chamber 64, or may introduce liquid (mist) water into the chamber 64. In addition, water vapor may be generated by passing nitrogen as a carrier gas through liquid water, for example.

[0115] In the embodiment, an example is described in which particle beam irradiation to chip CP and free radical treatment of chip CP are performed in one activation treatment device 60, but the present invention is not limited to this. For example, particle beam irradiation to chip CP and free radical treatment of chip CP may be performed by different devices.

[0116] In the embodiment, an example of a chip bonding system 1 is described in which a chip bonding surface activation process is performed on a chip CP attached to a sheet TE held in a holding frame 112 in an activation processing device 60, that is, after the first activation process and the second activation process are performed, the holding frame 112 is directly put into the chip supply unit 11 of the chip supply device 10. However, it is not limited to this. For example, the chip bonding system may also include a cleaning device (not shown) for cleaning the chip CP in a state of being attached to the sheet TE held in the holding frame 112, and cleaning the chip CP after the chip bonding surface activation process is performed on the chip CP. Here, the cleaning device, for example, includes: a support portion (not shown) that supports the holding frame 112 that holds the sheet TE attached to the chip CP; and a cleaning head (not shown) that discharges water that applies ultrasonic or megasonic vibrations to the chip CP attached to the sheet TE held in the holding frame 112, or a cleaning liquid that reduces the electrode surface. It should be noted that the liquid discharged from the cleaning head is not limited to water and the aforementioned cleaning liquid, and may also be other types of liquids such as organic solvents. First, the cleaning device sprays water or cleaning liquid to which ultrasonic waves are applied to the chip CP attached to the sheet TE through the cleaning head, while rotating the supporting part supporting the chip CP to clean the entire bonding surface CPf of the chip CP. Afterwards, the cleaning device rotates the supporting part in a state in which the discharge of water or cleaning liquid from the cleaning head is stopped, thereby drying the chip CP and the sheet TE. It should be noted that the cleaning device may also remove particles attached to the chip CP by, for example, spraying an inert gas such as N2 onto the chip CP instead of water.

[0117] Furthermore, as described in the embodiment, when the particle beam source 61 is a high-speed atomic beam source and the discharge chamber 612 is formed of a carbon material, carbon powder is generated from the peripheral wall of the discharge chamber 612. In addition, in the chip joint surface activation process, the carbon powder generated from the peripheral wall of the discharge chamber 612 may adhere to the joint surface CPf of the chip CP. In contrast, according to this configuration, after the chip joint surface activation process is performed in the activation processing device 60, the joint surface CPf of the chip CP is cleaned in the cleaning device, thereby suppressing the occurrence of poor bonding of the chip CP to the substrate WT.

[0118] In addition, as a method for cleaning the bonding surface CPf of the chip CP, a method of cleaning the chips CP one by one before bonding the chip CP to the substrate WT by the bonding device 30 can be conceived. However, in this case, the time required for installing the plurality of chips CP on the substrate WT will be longer compared to cleaning each chip CP. In contrast, according to this configuration, the plurality of chips CP attached to the sheet TE can be cleaned at one time. Therefore, the time required for installing the plurality of chips CP on the substrate WT can be shortened.

[0119] In the embodiment, an example is described of performing particle beam irradiation to a plurality of chips CP and free radical treatment of the chips CP in a state where the plurality of chips CP are attached to the sheet TE separately from each other in the chip joint surface activation process. However, it is not limited to this, and it may also be, for example, that after the cut substrate serving as the basis of the plurality of chips CP is cut, the joint surface CPf of the chip CP is cleaned in the aforementioned cleaning device in a state where the plurality of chips CP are in contact with each other or in a state where they are connected. Here, the chip supply device may have an extension portion, which extends the sheet TE held in the holding frame 112 so that the plurality of chips CP attached to the sheet TE are separated from each other. In this case, after the cleaning device cleans the plurality of chips CP attached to the sheet TE held in the holding frame 112, the holding frame 112 is directly put into the chip supply device, and the chip supply device extends the sheet TE held in the holding frame 112 so that the plurality of chips CP are separated from each other. In addition, the chip supply device may include a drying unit (not shown) for drying the plurality of chips CP and the sheet TE after stretching the sheet TE.

[0120] According to this configuration, for example, when the plurality of chips CP are cleaned with water or a cleaning liquid, water is suppressed from staying between the plurality of chips CP.

[0121] In addition, the aforementioned cleaning device may be, for example Fig.14A The cleaning device having the inner support portion 2119a and the frame support portion 2119b as shown in FIG. Here, the inner support portion 2119a supports the inner side of the holding frame 112 of the sheet TE held in the holding frame 112. The frame support portion 2119b supports the holding frame 112 and Fig.14A As shown by the arrow AR10, it can move in the -Z direction relative to the inner support part 2119a. In addition, the cleaning device has: a frame driving part (not shown) that drives the frame support part 2119b in the Z-axis direction; and a rotation driving part (not shown) that rotates the inner support part 2119a supporting the sheet TE and the frame support part 2119b supporting the holding frame 112 around the rotation axis J10 along the thickness direction of the holding frame 112, that is, the Z-axis direction. After washing the plurality of chips CP with water, the frame driving part moves the frame support part 2119b relative to the inner support part 2119a, thereby the first part PA1 of the sheet TE to which the plurality of chips CP are attached becomes separated from the second part PA2 fixed to the holding frame 112 in the direction of the rotation axis J10.

[0122] In addition, the cleaning device further includes an adsorption unit (not shown) that adsorbs the first portion PA1 of the sheet TE to which the plurality of chips CP are attached from the side opposite to the chip CP side. Fig. 14BAs shown, the frame driving unit causes the first portion PA1 of the sheet TE to be separated from the second portion PA2 in the direction of the rotation axis J10 of the sheet TE, that is, in the -Z direction. At this time, the adsorption unit adsorbs a plurality of chips CP in a state of contact with each other or in a state of connection, which are generated by cutting the cut substrate which is the basis of the plurality of chips CP pasted to the sheet TE. Then, the frame driving unit causes the frame support portion 2119b to move in the -Z direction relative to the inner support portion 2119a. Thus, the plurality of chips CP pasted to the sheet TE in a state of contact with each other or in a state of connection is prevented from separating from each other, thereby preventing water from adhering to the plurality of chips CP.

[0123] Then, in the cleaning device, as Fig. 14C As shown in FIG14(C), the chip CP is cleaned by discharging water or cleaning liquid from the cleaning head and rotating the inner support part 2119a and the frame support part 2119b. Thereafter, the rotary drive unit rotates the inner support part 2119a and the frame support part 2119b while the discharge of water or cleaning liquid from the cleaning head is stopped, thereby drying the sheet TE and the plurality of chips CP. At this time, as shown by the arrow AR11 in FIG14(C), the water or cleaning liquid attached to the chip CP is removed by the centrifugal force.

[0124] According to this configuration, the first portion PA1 of the sheet TE on which a plurality of chips CP are pasted is arranged to be separated by a distance H1 in the direction of the rotation axis J10 from the second portion PA2 fixed to the retaining frame 112. Thus, when the inner support portion 2119a and the frame support portion 2119b are rotated, water or cleaning liquid attached to the chip CP does not contact the inner side of the retaining frame 112 and the sheet TE, thereby suppressing retention.

[0125] In addition, the die bonding system may include a cleaning device (not shown) for cleaning the chips CP individually. In this case, the cleaning device may supply one chip CP from the chip supply device and clean the chip CP while the chip CP is being transported to the bonding device.

[0126] In addition, as a method for cutting the cut substrate serving as the basis of the plurality of chips CP, from the viewpoint of suppressing the generation of burrs at the ends of the chips CP, it is preferred to adopt a stealth cutting method using a laser. Thus, the plurality of chips CP attached to the sheet TE in a state of contact or connection with each other can be processed in the same manner as one cut substrate before cutting.

[0127] Furthermore, the cutting device can be used to process, for example, Fig.15A As shown in FIG. 1 , a groove WCT is formed in a portion of the cut substrate WC corresponding to the portion PAS where stealth cutting is performed. Fig.15AThe corner portion WCC surrounded by the dotted line may generate burrs. Therefore, the burrs generated at the corner portion WCC are removed by grinding after the groove WCT is formed. Fig. 15B As shown, the cut substrate WC is divided into a plurality of chips CP having a step portion CPd. Thus, the chip CP has a step portion CPd, so that the chip CP can be conveyed while maintaining the surface Cpd1 or the first corner CPC1 on the -Z direction side of the step portion CPd. Therefore, the chip CP can be conveyed without contacting the bonding surface CPf and the second corner CPC2 of the chip CP.

[0128] In addition, in the chip bonding system of the aforementioned modified example, a separation device (not shown) may be provided, which performs a separation process of separating the plurality of chips CP from each other by stretching the sheet TE held by the holding frame 112 holding the sheet TE to which the plurality of chips CP are attached. In addition, in the separation device, the sheet TE may be held again in the stretched state in the annular sheet holding frame (not shown), and the sheet holding frame holding the sheet TE may be supplied to the bonding device.

[0129] Furthermore, for example, when multiple chips CP are to be mounted on one substrate WT, when changing the chip CP put into the chip supply device, the sheet TE in an extended state needs to be loosened and taken out of the chip supply device. Therefore, when the sheet TE in an extended state is loosened, adjacent chips CP attached to the sheet TE may collide with each other and be damaged, thereby generating burrs or particles.

[0130] In contrast, according to this configuration, a plurality of chips CP attached to the sheet TE can be maintained in a separated state. Thus, a plurality of chips CP can be stored in a state where the plurality of chips CP are attached to the sheet TE, respectively. Therefore, for example, when a plurality of chips CP are to be installed on a substrate WT, the chip CP can be installed on the substrate WT while the sheet holding frame holding the sheet TE is appropriately replaced, and the generation of burrs or particles of the chip CP can be suppressed.

[0131] In an embodiment, for example, Fig.16A As shown, the chip CP may have a step portion CPd on the periphery of the bonding surface CPf side. In this case, the chip conveying device 39 may have a top end portion of the aforementioned arm 394 provided with a step portion CPd. Fig.16AThe chip holding portion 3393 has a suction portion 3393a as shown. The chip holding portion 3393 is a suction cup that holds the chip CP by sucking the chip CP through the suction portion 3393a in a state where a portion of the chip CP is in contact with the portion on the opposite side of the bonding surface CPf side of the step portion CPd of the chip CP, that is, the corner CPP1. It should be noted that "the portion on the opposite side of the bonding surface CPf side of the step portion CPd of the chip CP" includes not only the corner CPP1 but also the outermost side surface of the step portion CPd or the chip CP. That is, the chip holding portion 3393 holds the portion on the opposite side of the bonding surface CPf side of the step portion CPd of the chip CP, that is, the corner CPP1. In addition, the chip conveying device 39 performs a chip conveying process (a second object to be bonded conveying process) of conveying the chip CP from the chip supply device 10 to the bonding device 30 by holding the portion CPP1 on the opposite side of the bonding surface CPf side of the step portion CPd of the chip CP by the chip holding portion 3393. It should be noted that, as Fig. 16B As shown in FIG. 4 , the chip holding portion 4393 may be a suction cup having an inclined surface 4393b. Fig. 16B In, with Fig.16A The same figure marks are given to the same structures as those shown. In this case, when the chip holding portion 4393 holds the chip CP, the first corner CPC1 of the chip CP is held in contact with the inclined surface 4393b, thereby correcting the position of the chip CP. Therefore, when the chip CP is held on the chip holding portion 4393, the chip holding portion 4393 is not easy to contact the bonding surface CPf or the second corner CPC2 of the chip CP due to the positional offset of the chip CP, and is therefore preferred. In addition, the chip holding portion may also be a structure that clamps the second corner CPC2 or the outermost side of the chip CP for conveyance. Moreover, the chip holding portion may also have a so-called step tool that can attract and hold the chip CP in a state of contacting the step portion CPd of the chip CP and not contacting the second corner CPC2 and the bonding surface CPf of the chip CP.

[0132] In the chip bonding system described in the embodiment, before the bonding process of bonding the chip CP to the substrate WT, the chips CP are transported one by one to the head 33 for bonding. In this case, when a chip holding portion (not shown) for holding the chip CP from the bonding surface CPf side is provided at the top end of the aforementioned arm 394, particles or burrs are generated when the chip holding portion contacts the bonding surface CPf of the chip CP or the corner of the chip CP, and there is a fear that a gap will be generated at the interface between the two when the chip CP is bonded to the substrate WT. In addition, when the chip holding portion contacts the bonding surface CPf of the chip CP that has been activated, the state of the bonding surface CPf will deteriorate, and there is a fear that poor bonding between the chip CP and the substrate WT will also occur. For example, in a method of bonding the chip CP to the substrate WT by melting the solder provided on the chip CP, the particles attached to the bonding surface CPf of the chip CP are taken into the solder, so that there is no significant influence on the bonding state between the chip CP and the substrate WT. However, in the method of bonding the chip CP to the substrate WT after activating the bonding surface CPf of the chip CP, the bonding surface CPf and the mounting surface WTf are bonded in a solid phase state, so particles attached to the bonding surface CPf of the chip CP or burrs generated at the corners of the chip CP may have a significant impact on the bonding state of the chip CP and the substrate WT. In contrast, according to the present configuration, a step portion CPd is provided on the periphery of the bonding surface CPf side of the chip CP, so that the chip CP can be transported without contacting the bonding surface CPf of the chip CP, thereby suppressing the generation of particles or burrs on the bonding surface CPf and corners of the chip CP, and maintaining the bonding surface CPf in a good state, thereby suppressing the generation of poor bonding between the chip CP and the substrate WT.

[0133] Moreover, the present configuration is not limited to the case where the method for activating the bonding surface CPf of the chip CP is the aforementioned method of irradiating a particle beam, and is also effective in the case where the activation method is, for example, a method of activating the bonding surface CPf by subjecting the bonding surface CPf of the chip CP to a plasma treatment. In the bonding method of bonding the chip CP to the substrate WT by subjecting the bonding surface CPf of the chip CP to an activation treatment, if the chip holding portion contacts the bonding surface CPf to which the activation treatment has been applied, poor bonding between the chip CP and the substrate WT will occur, and therefore, conveying the chip CP without contacting the bonding surface CPf as described above is particularly important for good bonding of the chip CP to the substrate WT.

[0134] In the embodiment, an example of a cleaning process of cleaning the bonding surface CPf of the chip CP after the bonding surface CPf of the chip CP has been activated and then in the middle of conveying the chip CP to the bonding device 30 is described. However, this is not limited to this, and the bonding surface CPf of the chip CP may be cleaned before conveying the chip CP to the bonding device 30 after the bonding surface CPf of the chip CP has been activated. In this case, particles attached to the bonding surface CPf of the chip CP can be removed before conveying the chip CP to the bonding device 30, which is preferred.

[0135] In the embodiment, an example is described in which the chips CP are transported one by one to the head 33H of the bonding device 30 to bond the chips CP to the substrate WT. However, this is not limited to this. For example, after the aforementioned separation step is performed, the chips CP may be transported to the bonding device 30 in a state where the chips CP are attached to the sheet TE to bond the chips CP directly to the substrate WT. Fig.17A As shown, the bonding device may include: a stage 315, which is a substrate support portion for holding a substrate WT; a frame support portion 3331, which supports a holding frame 112, and the holding frame 112 holds a sheet TE to which a plurality of chips CP are attached; a head 3033H, which presses the chip CP toward the stage 315 side from the side opposite to the chip CP side of the sheet TE; a head drive portion 3036, which drives the head 3033H; and a lifting mechanism (not shown) to lift and lower the frame support portion 3331 and the head drive portion 3036. It should be noted that in Fig.17A In the embodiment, the same configuration as that in the embodiment is marked with Figure 2 Same reference numerals.

[0136] In addition, the bonding device has: a support part driving part (not shown) that drives the stage 315 and the frame support part 3331; a photographing part (not shown) that photographs the first alignment mark and the second alignment mark from at least one of the opposite side of the substrate WT side of the chip CP and the opposite side of the chip CP side of the substrate WT; and a control part (not shown) that controls the support part driving part and the photographing part. In addition, it is assumed that a first alignment mark (not shown) is provided on the substrate WT and a second alignment mark (not shown) is provided on the chip CP. In this case, the control part controls the photographing part to photograph the first alignment mark and the second alignment mark, and calculates the positional offset of the chip CP relative to the substrate WT based on the photographed image. Thereafter, the control part controls the support part driving part to move the frame support part 331 or the stage 315 relatively in a direction to reduce the positional offset of the chip CP relative to the substrate WT. That is, the chip bonding system performs: a photographing process, in which the first alignment mark and the second alignment mark are photographed by the photographing unit from at least one of the opposite side of the chip CP side of the substrate WT and the opposite side of the chip CP on the substrate WT; a position offset calculation process, in which the position offset of the chip CP relative to the substrate WT is calculated based on the photographed image photographed in the photographing process; and a moving process, in which the frame support part 3331 or the stage 315 is moved in a direction to reduce the position offset of the chip CP relative to the substrate WT. Here, the photographing unit may be a so-called dual-view camera, which is a structure that photographs the alignment marks respectively provided on the chip CP and the substrate WT in a state of being inserted between the chip CP and the substrate WT. Alternatively, the photographing unit may be a camera using so-called infrared rays, and the alignment marks may be photographed using infrared light from the opposite side of the mounting surface WTf side of the substrate WT or the opposite side of the bonding surface CPf side of the chip CP. Furthermore, in the case where the photographing unit is a dual-view camera, particles may be mixed between the chip CP and the substrate WT. In contrast, when the imaging unit utilizes the aforementioned infrared light to image the alignment mark, there is no need to arrange the imaging unit between the chip CP and the substrate WT, thereby suppressing the mixing of particles between the chip CP and the substrate WT, thereby suppressing the attachment of particles to the chip CP or the substrate WT, which is therefore preferred.

[0137] The bonding device can photograph the alignment mark while moving one photographing unit, or can photograph two groups of alignment marks consisting of an alignment mark provided on the substrate WT and an alignment mark provided on the chip CP by two photographing units, and calculate the position offset of the chip CP and the offset of the posture of the chip CP in the rotation direction. Moreover, it is preferred that the bonding device adsorbs the chip CP pushed up from the opposite side of the chip CP side of the sheet TE in advance when pushing up the chip CP with the head 3033H, so that the chip CP adjacent to the pushed up chip CP will not follow the pushed up chip CP and be pushed up. In addition, if the sheet TE is retracted again after the chip CP is separated by stretching the sheet TE, the adjacent chips CP contact each other, thereby generating particles from the chip CP or burrs at the corners of the chip CP. Therefore, it is preferred that after the aforementioned separation process, the chip CP is bonded to the substrate WT in a state where the sheet TE is stretched. Moreover, it is preferred that when bonding the chip CP to the substrate WT, the central part of the chip CP is pressed to the substrate WT side so as to contact the substrate WT from the central part of the chip CP. Thus, bonding is performed from the center portion of the chip CP to the substrate WT, thereby avoiding generation of a gap due to air being drawn in between the chip CP and the substrate WT.

[0138] Here, the frame support portion 3331 , the head 3033H, and the head driving portion 3036 are arranged vertically below the stage 315 .

[0139] In the bonding device, first, as Fig.17A As shown in FIG. 1 , the holding frame 112 is arranged in a posture in which the surface of the chip CP side of the sheet TE faces vertically upward. Fig. 17B As shown by the arrows AR302 and AR303, the lifting mechanism raises the frame support portion 3331 and the head drive portion 3036 and approaches the stage 315, so that the distance between the sheet TE and the mounting surface WTf of the substrate WT becomes a preset reference distance. Fig. 17C As shown, the head driving unit 3036 bonds the chip CP to the substrate WT by driving the head 3033H in a direction close to the stage 315. That is, the bonding device bonds the chip CP to the substrate WT by moving the head 3033H in a direction close to the substrate WT while the head 3033H is in contact with the side opposite to the side of the multiple chips CP of the sheet TE on which the multiple chips CP are attached.

[0140] It should be noted that as the sheet TE, a sheet TE coated with an adhesive material whose adhesive force is reduced when ultraviolet rays are irradiated to the side of the sheet TE to which a plurality of chips CP are attached can also be used. In this case, the bonding device can be provided with an ultraviolet irradiation unit, which can locally irradiate ultraviolet rays only to the portion of the sheet TE corresponding to the chip CP in contact with the substrate WT. In this case, the bonding device is provided with a head 3033H formed of a transparent material, the head 3033H is abutted against the side opposite to the chip CP side of the sheet TE, and the head 3033H is moved in a direction close to the substrate WT, and in a state where the chip CP is in contact with the substrate WT, the sheet TE is irradiated with ultraviolet rays through the head 3033H through the ultraviolet irradiation unit. It should be noted that the sheet TE is not limited to an adhesive material coated with an adhesive material whose adhesive force is reduced when irradiated with ultraviolet rays, and for example, it can also be coated with an adhesive material whose adhesive force is reduced by heating or other methods.

[0141] According to this configuration, as in the chip mounting system 1 of the embodiment, there is no need to pick up the chip CP from the sheet TE and transfer it to the head 33H, so the steps required for mounting the chip CP on the substrate WT can be reduced. In addition, according to this configuration, the step of conveying the chips CP one by one can be omitted, so the deterioration of the bonding surface CPf or the generation of particles caused by the contact of the chip holding portion with the bonding surface CPf of the chip CP when conveying the chips CP one by one, or the generation of burrs caused by the contact of the chip holding portion with the corner of the chip CP can be suppressed, thereby suppressing the poor bonding between the chip CP and the substrate WT.

[0142] It should be noted that the step of bonding the chip CP to the substrate WT can be directly performed after the bonding surface CPf of the chip CP is activated. Alternatively, the step of cleaning the bonding surface CPf of the chip CP can be performed after the bonding surface CPf of the chip CP is activated and before the bonding process of bonding the chip CP to the substrate WT. In this case, particles attached to the bonding surface CPf of the chip CP can be removed before bonding the chip CP to the substrate WT, which is preferred.

[0143] Furthermore, the sheet TE is mostly loaded with particles generated from the chip CP when the sheet TE is stretched and separated into a plurality of chips CP. Therefore, for example, if the chip CP is to be joined from vertically above the substrate WT, the particles carried on the sheet TE will fall onto the substrate WT, which may cause poor joining between the chip CP and the substrate WT. In contrast, according to this configuration, the chip CP is brought close to the substrate WT from vertically below for joining, thereby suppressing the occurrence of poor joining between the chip CP and the substrate WT caused by the particles carried on the sheet TE.

[0144] In addition, the present structure is suitable for so-called hybrid bonding, which activates the flat bonding surface CPf in which the Cu electrode and the insulating film are CMP-polished, for example, by plasma treatment or particle beam irradiation, and then, after hydrophilizing the bonding surface CPf by attaching water molecules to the bonding surface CPf, the chip CP is bonded to the substrate WT.

[0145] In the embodiment, an example of the die bonding system including the cleaning device 85 is described, but the present invention is not limited thereto, and the die bonding system may not include the cleaning device 85 .

[0146] The present invention can realize various embodiments and variations without departing from the broad spirit and scope of the present invention. In addition, the above-mentioned embodiments are used to illustrate the present invention and do not limit the scope of the present invention. That is, the scope of the present invention is not represented by the embodiments but by the claims. In addition, various variations implemented within the claims and within the scope of the meaning of the invention equivalent thereto are deemed to be within the scope of the present invention.

[0147] This application is based on Japanese Patent Application No. 2018-162738 filed on August 31, 2018 and Japanese Patent Application No. 2018-205227 filed on October 31, 2018. The specifications, claims, and drawings of Japanese Patent Application No. 2018-162738 and Japanese Patent Application No. 2018-205227 are incorporated herein by reference in their entirety.

[0148] Industrial Applicability

[0149] The present invention is suitable for the manufacture of, for example, CMOS image sensors, memories, computing elements, and MEMS.

[0150] Description of Reference Numerals

[0151] 1: chip bonding system; 10: chip supply device; 11: chip supply unit; 30: bonding device; 31: stage unit; 33: bonding unit; 33H, 3033H: head; 36, 3036: head driving unit; 39: chip conveying device; 60: activation treatment device; 61: particle beam source; 62: support unit; 63: beam source conveying unit; 64: chamber; 64a: hole; 70: conveying device; 71: conveying robot; 80: loading and unloading unit; 85: cleaning device; 90: control unit; 111: picking mechanism; 111a: needle; 112: holding frame; 113: holding frame driving unit; 114, 622: cover; 114a: through hole; 119, 621: frame holding unit; 315: stage; 320, 853: stage driving unit; 391: plate; 392: plate driving unit; 393: chip holding unit; 394: arm; 395: arm driving unit moving part; 411: chip tool; 411a, 411b: through hole; 413: head body; 432a: chip support; 432b: support drive; 611: electrode; 612: discharge chamber; 612a: FAB radiation port; 613: beam source drive; 614, 677: gas supply; 623: frame holding drive; 631: support rod; 632: support body; 633: support drive; 634: bellows; 672: magnetron; 673: waveguide tube; 674: glass window; 675: plasma chamber; 676: supply pipe; 851: cleaning head; 852: table; 2119a: inner support part; 2119b: frame support part; CP: chip; CPA1, CPA9: impurities; CPf: bonding surface; TE: sheet; OB1: track; PLM9: sheath area; WT: substrate; WTf: mounting surface.

Claims

1. A joining system for joining a second object to be joined to a first object to be joined, wherein: The joining system comprises: The activation treatment device comprises: an object support portion for supporting an object including at least the second object to be bonded; and a particle beam source for irradiating the object with a particle beam to activate the bonding surface of the second object to be bonded, and after the object is disposed on one treatment surface in a non-opposing arrangement, the particle beam source is used to perform activation treatment; as well as a bonding device for bonding the second object to be bonded to the first object to be bonded by bringing the second object to be bonded, the bonding surface of which has been activated by the activation treatment device, into contact with the first object to be bonded, The object support portion supports the object in a posture in which a portion of the second object to be bonded, including the bonding surface, formed of a plurality of materials is exposed to the particle beam source side.

2. The joining system according to claim 1, wherein: The particle beam contains nitrogen.

3. The joining system according to claim 1 or 2, wherein: The object supporting portion holds the object in a posture in which the joining surface of the second object to be joined faces vertically downward, The particle beam source irradiates the particle beam toward the bonding surface of the second bonded object from vertically below the object.

4. The joining system according to claim 1 or 2, wherein: The first object to be bonded is a substrate, The second object to be bonded is a chip, The object support portion comprises: A holding frame that holds a sheet formed of resin and to which at least one of the second objects to be bonded is adhered; as well as The support portion supports the holding frame in a posture that a side of the sheet to which at least one second bonded object is attached faces the particle beam source side. The particle beam source irradiates a particle beam toward the bonding surface of each of at least one of the second objects to be bonded that are bonded to the sheet.

5. The joining system of claim 4, wherein: The particle beam source is set so that an incident angle of the particle beam with respect to a virtual plane including a bonding surface of the second bonded object is not less than 30 degrees and not more than 80 degrees.

6. The joining system of claim 4, wherein: The second object to be bonded is a plurality of objects bonded to the sheet at equal intervals. The incident angle of the particle beam relative to the imaginary plane including the bonding surface of the second bonded object is set as follows: If the incident angle is set to θ1, the interval between adjacent second bonded objects is set to L1, and the thickness of the second bonded object is set to T1, then the relationship of the following formula (1) holds, [Formula 1] 7. The joining system of claim 4, wherein: The activation treatment device further includes a cover that covers a portion of the sheet material except for a portion on which the at least one second object to be bonded is bonded, on one side of the sheet material on which the at least one second object to be bonded is bonded, in a state in which the holding frame is supported by the support portion.

8. The joining system according to claim 1 or 2, wherein: The activation treatment device activates bonding surfaces of a plurality of second objects to be bonded that are in contact with or connected to each other immediately after a cut substrate serving as a base of at least one of the second objects to be bonded is cut.

9. The joining system of claim 4, wherein: The bonding system further includes a cleaning device for cleaning at least one of the second objects to be bonded.

10. The joining system of claim 9, wherein: The cleaning device cleans the at least one second object to be bonded in a state where the sheet to which the at least one second object to be bonded is attached is held by the holding frame.

11. The joining system of claim 10, wherein: at least one of the second objects to be bonded exists in plurality, The plurality of second objects to be bonded are generated by cutting a cut substrate which is a base of the plurality of second objects to be bonded. The cleaning device cleans a plurality of second bonded objects that are in contact with or connected to each other immediately after the cut substrate is cut. The joining system further includes a separation device that extends the sheet held by the holding frame that holds the sheet to which the plurality of second objects to be joined are adhered, thereby separating the plurality of second objects to be joined from each other.

12. A joining system according to claim 10 or 11, wherein: at least one of the second objects to be bonded exists in plurality, The cleaning device comprises: An inner support portion, supporting the inner side of the holding frame of the sheet material held in the holding frame; a frame support portion, supporting the holding frame and being movable relative to the inner support portion; a frame driving portion, driving the frame supporting portion; as well as a rotation drive unit that rotates the inner support unit and the frame support unit around a rotation axis along the thickness direction of the holding frame, The frame driving portion moves the frame support portion relative to the inner support portion, whereby a first portion of the sheet to which a plurality of the second objects to be bonded are attached becomes separated from a second portion fixed to the holding frame in the direction of the rotation axis of the sheet. The rotation drive unit cleans the sheet and the plurality of second objects to be bonded by rotating the inner support unit and the frame support unit when a first portion of the sheet to which the plurality of second objects to be bonded are adhered and a second portion fixed to the retaining frame are separated in the direction of the rotation axis of the sheet.

13. The joining system of claim 12, wherein: The cleaning device further comprises an adsorption portion, which adsorbs the first portion of the sheet material to which a plurality of second objects to be bonded are attached immediately after the substrate to be cut and in contact with or connected to each other from the opposite side of the plurality of second objects to be bonded of the sheet material, The frame driving portion moves the frame supporting portion relative to the inner supporting portion when the first portion of the sheet is adsorbed by the adsorption portion, thereby causing the first portion of the sheet to which a plurality of the second objects to be bonded are attached to be separated from the second portion fixed to the retaining frame in the direction of the rotation axis of the sheet.

14. The joining system according to claim 1 or 2, wherein: The second object to be bonded forms a plurality of regions made of different materials on the bonding surface.

15. The joining system of claim 14, wherein: The second object to be bonded is provided with an electrode and an insulating film on the bonding surface, The insulating film is formed of oxide, oxynitride, or nitride.

16. The joining system according to claim 1 or 2, wherein: The activation treatment device moves at least one of the particle beam source and the object relative to the other.

17. The joining system according to claim 1 or 2, wherein: The particle beam source is a high-speed atomic beam source.

18. The joining system according to claim 1 or 2, wherein: The activation treatment device further includes a radical source configured to irradiate the bonding surface of the second bonded object with nitrogen radicals.

19. The joining system according to claim 1 or 2, wherein: The bonding device bonds the second object to be bonded to the first object to be bonded by hydrophilizing the second object to be bonded.

20. The joining system of claim 1 or 2, wherein: At least one of the second objects to be bonded is a chip having a step portion at a peripheral portion on the bonding surface side. The joining system further comprises: A second object-to-be-bonded supplying device supplies at least one of the second objects to be bonded; and a second object-to-be-joined conveying device for conveying at least one of the second objects-to-be-joined supplied from the second object-to-be-joined supplying device to the joining device; The second object to be bonded transport device includes a second object to be bonded holding portion that holds at least one portion of the second object to be bonded on the opposite side of the bonding surface side of the step portion.

21. The joining system of claim 1 or 2, wherein: at least one of the second objects to be bonded exists in plurality, The engaging device comprises: A substrate support portion for holding the first object to be bonded; A frame support portion supports a holding frame for holding a sheet material to which a plurality of second objects to be bonded are attached; A head abutting against the side of the sheet opposite to the second plurality of objects to be bonded; as well as The head driving unit drives the head in a direction approaching the substrate supporting unit to bond at least one of the second objects to be bonded to the first objects to be bonded.

22. A joining system for joining a second object to be joined to a first object to be joined, wherein: The second object to be bonded is a chip having a step portion at the periphery of the bonding surface side to be bonded to the first object to be bonded, The joining system comprises: A second object-to-be-joined supplying device for supplying the second object-to-be-joined; a joining device for joining the second object to be joined to the first object to be joined by bringing the second object to be joined into contact with the first object to be joined; as well as a second object-to-be-joined conveying device for conveying at least one of the second objects-to-be-joined supplied from the second object-to-be-joined supplying device to the joining device; The second object conveying device includes a second object holding portion, the second object holding portion holding at least one portion of the second object on the opposite side of the bonding surface of the step portion. The second object holding portion has an inclined surface that contacts only the lower end side of the step portion of the second object when holding the second object.

23. A joining system for joining a second object to be joined to a first object to be joined, wherein: The joining system has: a substrate support portion for holding the first object to be bonded in a posture in which a bonding surface of the first object to be bonded faces vertically downward; a frame support portion, arranged vertically below the substrate support portion, and supporting a holding frame, the holding frame holding a sheet material to which the second object to be bonded is attached with a bonding surface of the second object to be bonded facing vertically upward; A head abutting against the side of the sheet opposite to the second plurality of objects to be bonded; as well as The head driving unit drives the head in a direction approaching the substrate supporting unit to bond at least one of the second objects to be bonded to the first objects to be bonded.

24. The joining system of claim 23, wherein: A first alignment mark is provided on the first object to be bonded, The second object to be bonded is provided with a second alignment mark, The joining system further comprises: a support portion driving portion that drives at least one of the substrate support portion and the frame support portion; a photographing unit that photographs the first alignment mark and the second alignment mark from at least one of a side of the first object to be bonded opposite to the second object to be bonded side and a side of the second object to be bonded opposite to the first object to be bonded side; and a control unit, controlling the support driving unit and the photographing unit, The control unit controls the photographing unit to photograph the first alignment mark and the second alignment mark, and after calculating the position offset of the second object to be bonded relative to the first object to be bonded based on the captured image, controls the support unit driving unit to relatively move at least one direction of the substrate support unit and the frame support unit in a direction that reduces the position offset of the second object to be bonded relative to the first object to be bonded.

25. A joining system according to any one of claims 22 to 24, wherein: The bonding system further includes an activation treatment device for activating a bonding surface of the second object to be bonded.

26. A method for joining a second object to be joined to a first object to be joined, wherein: The joining method comprises: A first activation step of arranging objects including at least the second object to be bonded on a processing surface in a non-opposing manner, and irradiating a portion of the second object to be bonded in the object including the bonding surface formed of a plurality of materials with a particle beam to activate the bonding surface of the second object to be bonded; and The joining step is to join the second object to be joined to the first object to be joined by bringing the second object to be joined, the joining surface of which is activated, into contact with the first object to be joined.

27. The bonding method according to claim 26, wherein: In the first activation step, The object is held in a posture where the bonding surface of the second object to be bonded faces vertically downward, and the particle beam is irradiated toward the bonding surface of the second object to be bonded from vertically below the object.

28. The bonding method according to claim 26 or 27, wherein: The particle beam includes nitrogen.

29. The bonding method according to claim 26 or 27, wherein: The method further includes, after the first activation step, irradiating the bonding surface of the second bonded object with nitrogen radicals.

30. The bonding method according to claim 26 or 27, wherein: In the joining step, the second object to be joined is hydrophilized and joined to the first object to be joined.

31. The bonding method according to claim 26 or 27, wherein: The second object to be bonded is provided with an electrode and an insulating film on the bonding surface, The insulating film is formed of oxide, oxynitride, or nitride.

32. The bonding method according to claim 26 or 27, wherein: In the first activation step, bonding surfaces of a plurality of second bonded objects in a state of contact or connection with each other immediately after a cut substrate serving as a base of at least one of the second bonded objects is cut are activated.

33. The bonding method according to claim 26 or 27, wherein: The method further includes a cleaning step of cleaning the bonding surface of at least one of the second bonding objects before the bonding step.

34. The bonding method according to claim 33, wherein: The first object to be bonded is a substrate, The second object to be bonded is a chip, In the cleaning step, the bonding surface of at least one of the second objects to be bonded is cleaned in a state where the at least one of the second objects to be bonded is attached to a sheet material formed of resin and held by a holding frame.

35. The bonding method according to claim 34, wherein: at least one of the second objects to be bonded exists in plurality, The plurality of second objects to be bonded are generated by cutting a cut substrate which is a base of the plurality of second objects to be bonded. In the cleaning step, the plurality of second objects to be bonded are cleaned in a state where the plurality of second objects to be bonded are in contact with or connected to each other immediately after the cut substrate is cut. The bonding method further includes, before the bonding step, a separating step of extending the sheet held by the holding frame so that the plurality of second objects to be bonded are separated from each other.

36. The bonding method according to claim 34 or 35, wherein: at least one of the second objects to be bonded exists in plurality, In the cleaning process, after the plurality of second-bonded objects are cleaned with water, the frame support portion of the supporting and holding frame is moved relatively to the inner support portion on the inner side of the holding frame that supports the sheet held in the holding frame, and the holding frame holds the sheet to which the plurality of second-bonded objects are pasted, thereby drying the sheet and the plurality of chips by rotating the inner support portion and the frame support portion in a state in which a first portion of the sheet to which the plurality of second-bonded objects are pasted and a second portion fixed to the holding frame are separated in the direction of the rotation axis of the sheet.

37. The bonding method according to claim 36, wherein: In the cleaning process, in a state where the first portion of the sheet having a plurality of second objects to be bonded thereto, which are in a contacting or connected state immediately after the substrate to be cut is adsorbed and adhered thereto from the opposite side of the sheet to the plurality of second objects to be bonded thereto, the frame support portion is moved relative to the inner support portion so that the first portion of the sheet becomes separated from the second portion fixed to the retaining frame in the direction of the rotation axis of the sheet.

38. The bonding method according to claim 26 or 27, wherein: At least one of the second objects to be bonded is a chip having a step portion at a peripheral portion on the bonding surface side. The joining method further comprises: A second object to be bonded supplying step of supplying at least one of the second objects to be bonded; and A second object to be bonded conveying step of conveying at least one of the supplied second objects to be bonded, In the second object to be bonded conveying step, the second object to be bonded is conveyed by holding at least one portion of the second object to be bonded on the opposite side of the bonding surface side of the step portion of the second object to be bonded by the second object to be bonded holding portion.

39. The bonding method according to claim 26 or 27, wherein: at least one of the second objects to be bonded exists in plurality, In the joining process, with the head in contact with the side opposite to the second objects to be joined of the sheet having the second objects to be joined attached, at least one of the second objects to be joined is joined to the first object by moving the head toward the first object to be joined.

40. A joining method for joining a second object to be joined to a first object to be joined, wherein: The second objects to be bonded are chips each having a step portion at a peripheral portion on a bonding surface side of the second objects to be bonded, The joining method comprises: A second object to be bonded conveying step of conveying the second object to be bonded; and a joining step of joining the second object to be joined to the first object to be joined by bringing the second object to be joined into contact with the first object to be joined, In the second object-to-be-joined conveying step, the second object-to-be-joined is conveyed by holding at least one portion of the step portion of the second object-to-be-joined on the opposite side of the joining surface side thereof by a second object-to-be-joined holding portion. The second object holding portion has an inclined surface that contacts only the lower end side of the step portion of the second object when holding the second object.

41. A method for joining a second object to be joined to a first object to be joined, wherein: The joining method includes a joining process, which is the following process: holding the first object to be joined with its joining surface facing vertically downward, and arranging a sheet to which the second object to be joined is attached with its joining surface facing vertically upward vertically below the first object to be joined, and joining the second object to be joined to the first object by moving the head in a direction approaching the first object while the head is in contact with the side of the sheet opposite to the second object to be joined.

42. The bonding method according to claim 41, wherein: A first alignment mark is provided on the first object to be bonded, The second object to be bonded is provided with a second alignment mark, The joining method further comprises: a photographing step of photographing the first alignment mark and the second alignment mark from at least one of a side of the first object to be bonded opposite to the second object to be bonded side and a side of the second object to be bonded opposite to the first object to be bonded side by a photographing unit; a positional deviation amount calculating step of calculating a positional deviation amount of the second object to be bonded relative to the first object to be bonded based on the image captured in the capturing step; and The moving step moves the second object to be bonded or the first object to be bonded in a direction that reduces the amount of positional deviation of the second object to be bonded relative to the first object to be bonded.

43. The joining method according to any one of claims 40 to 42, wherein: The method further includes a first activation step of activating the bonding surface of the second bonded object.

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