A heat-conducting and insulating mechanism for a power device

Abstract

The present invention discloses a heat-conducting and insulating mechanism for a power device, which includes a power device substrate, a limiting plate, a storage groove, an adhesive groove and a MOS board. A storage groove is provided inside the power device substrate, and a limiting plate is fixed on the inner wall of the storage groove. Equally spaced adhesive grooves are provided inside the limiting plate, and a MOS board is installed in the storage groove on one side of the adhesive groove through fixing studs. Equally spaced MOS transistors are fixed on the surface of the MOS board, and a bottom plate is installed on the surface of the MOS board on one side of the MOS transistor. Clamping mechanisms are provided inside the storage groove outside the MOS board. Equally spaced outer shells are fixed on the outer walls on both sides of the power device substrate, and threaded counterbores are provided inside the outer shells. The present invention not only avoids the phenomenon of ceramic chips breaking in the heat-conducting and insulating mechanism, improves the practicability of the heat-conducting and insulating mechanism during use, but also realizes the protection function of the heat-conducting and insulating mechanism during use.

Description

Technical Field

[0001] The present invention relates to the technical field of power devices, and specifically to a heat-conducting and insulating mechanism for power devices. Background Technique

[0002] Since new energy subsidies are about to withdraw from the "stage", Chinese and foreign car companies are all gearing up to compete on the more intense new energy market stage in the future. As the core power component of new energy vehicles, the MCU will also face greater cost pressure. Therefore, major companies have also launched a new round of cost reduction measures for power devices.

[0003] There are various types of such heat-conducting and insulating mechanisms for power devices on the current market, which can basically meet people's usage needs, but there are still certain problems. The specific problems are as follows:

[0004] (1) When the traditional heat-conducting and insulating mechanism for such power devices is in use, the porcelain on the surface is easily broken, resulting in high costs during use.

[0005] (2) When the traditional heat-conducting and insulating mechanism for such power devices is in use, due to its stacking error and poor adhesiveness, its practicality is low during use.

[0006] (3) When the traditional heat-conducting and insulating mechanism for such power devices is in use, due to its low protection level, its service life is low during use. Summary of the Invention

[0007] The purpose of the present invention is to provide a heat-conducting and insulating mechanism for power devices to solve the problems of high device cost, poor practicality, and low service life mentioned in the above background technique.

[0008] To achieve the above purpose, the present invention provides the following technical solution: A heat-conducting and insulating mechanism for power devices, including a power device base body, a limiting plate, a placement groove, an adhesive groove, and a MOS board. A placement groove is provided inside the power device base body, and a limiting plate is fixed on the inner wall of the placement groove. Equally spaced adhesive grooves are provided inside the limiting plate, and a MOS board is installed in the placement groove on one side of the adhesive groove through fixing studs. Equally spaced MOS transistors are fixed on the surface of the MOS board, and a bottom plate is installed on the surface of the MOS board on one side of the MOS transistor. Clamping mechanisms are provided inside the placement groove outside the MOS board.

[0009] Preferably, equally spaced heat dissipation plates are fixed on the outer wall of the power device base body, and the heat dissipation plates are symmetrically distributed about the center line of the power device base body.

[0010] Preferably, equally spaced outer shells are fixed on the outer walls on both sides of the power device base body, and threaded counterbores are provided inside the outer shells.

[0011] Preferably, a side plate is fixed on the outer wall of the power device substrate away from the housing, and threaded grooves are provided inside the side plates.

[0012] Preferably, heat-conducting glue is applied on the inner side walls of the bonding grooves, and the heat-conducting glue is made of methyl vinyl polysiloxane, methyl hydrogen polysiloxane, platinum catalyst, alcohol retarder, alumina, aluminum hydroxide, boron nitride, and vinyl.

[0013] Preferably, ceramic sheets are provided at the inner corner positions of the bonding grooves on one side of the heat-conducting glue, and the side of the ceramic sheet close to the heat-conducting glue is adhered to the side of the heat-conducting glue.

[0014] Preferably, a first groove, a rubber clamping plate, and a second groove are sequentially provided inside the clamping mechanism. First grooves are provided inside the MOS boards on one side of the rubber clamping plate, and the rubber clamping plate is fixedly connected to the inner wall of the first groove. Second grooves are provided inside the power device substrates on the side of the rubber clamping plate away from the first groove, and the first groove and the second groove cooperate with each other.

[0015] Preferably, limiting blocks are fixed on the inner walls of the storage grooves outside the MOS boards, and the outer diameter of the limiting blocks is smaller than the inner diameter of the cavities on the surface of the MOS boards. The limiting blocks and the cavities form a clamping structure.

[0016] Preferably, connecting plates are fixed at the ends of the bottom plates away from the MOS boards, blocks are fixed between the MOS transistors on the surface of the MOS boards, and one ends of the blocks are fixedly connected to the bottom plates.

[0017] Compared with the prior art, the beneficial effects of the present invention are: the heat-conducting and insulating mechanism of the power device not only avoids the phenomenon of ceramic sheet breakage in the heat-conducting and insulating mechanism, improves the practicability of the heat-conducting and insulating mechanism during use, but also realizes the protection function of the heat-conducting and insulating mechanism during use;

[0018] (1) By fixing a limiting plate on the inner wall of the storage groove, providing a bonding groove inside the limiting plate, and arranging ceramic sheets at the inner corners of the bonding groove on one side of the heat-conducting glue, the phenomenon of ceramic sheet breakage in the heat-conducting and insulating mechanism is avoided, thereby reducing the use cost of the heat-conducting and insulating mechanism;

[0019] (2) By applying heat-conducting glue on the inner side walls of the bonding grooves, and the heat-conducting glue is made of methyl vinyl polysiloxane, methyl hydrogen polysiloxane, platinum catalyst, alcohol retarder, alumina, aluminum hydroxide, boron nitride, and vinyl. The bonding groove is a viscous paste before curing, has a certain fluidity, can elastically release the pressure applied to the ceramic sheet, offset the superimposed error, and also has excellent adhesiveness, avoiding the superimposed error and strengthening the adhesiveness, thereby improving the practicability of the heat-conducting and insulating mechanism during use;

[0020] (3) Fix the first groove inside the rubber clamping plate. A second groove is arranged inside the power device base on the side of the rubber clamping plate away from the first groove, and the first groove and the second groove are clamped with each other, realizing the protection function during the use of the heat conduction and insulation mechanism, thereby prolonging the service life of the heat conduction and insulation mechanism. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a front view structural schematic diagram of the limit plate of the present invention;

[0022] Figure 2 It is a side view sectional structural schematic diagram of the limit plate of the present invention;

[0023] Figure 3 It is a front view structural schematic diagram of the MOS board of the present invention;

[0024] Figure 4 For the present invention Figure 3 The enlarged partial sectional structural schematic diagram at position A in;

[0025] Figure 5 It is a front view structural schematic diagram of the heat dissipation plate of the present invention.

[0026] In the figure: 1, power device base; 2, outer shell; 3, threaded counterbore; 4, side plate; 5, threaded groove; 6, limit plate; 7, placement groove; 8, bonding groove; 9, heat dissipation plate; 10, ceramic sheet; 11, thermal conductive glue; 12, block; 13, connecting plate; 14, fixing stud; 15, MOS tube; 16, clamping mechanism; 1601, first groove; 1602, rubber clamping plate; 1603, second groove; 17, limit block; 18, MOS board; 19, bottom plate. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0027] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.

[0028] Please refer to Figures 1-5 , an embodiment provided by the present invention: A heat conduction and insulation mechanism for power devices, including a power device base 1, a limit plate 6, a placement groove 7, a bonding groove 8, and a MOS board 18. A placement groove 7 is arranged inside the power device base 1, and a limit plate 6 is fixed on the inner wall of the placement groove 7. Equally spaced bonding grooves 8 are arranged inside the limit plate 6;

[0029] The inner side walls of the bonding grooves 8 are all coated with a thermally conductive glue 11, and the material of the thermally conductive glue 11 is methyl vinyl polysiloxane, methyl hydrogen polysiloxane, platinum catalyst, alcohol retarder, alumina, aluminum hydroxide, boron nitride, and vinyl. At the inner corner positions of the bonding grooves 8 on one side of the thermally conductive glue 11, ceramic chips 10 are provided, and the side of the ceramic chip 10 close to the thermally conductive glue 11 is bonded to one side of the thermally conductive glue 11. Before curing, the bonding grooves 8 are in the form of a viscous paste with a certain fluidity, which can elastically release the pressure applied to the ceramic chips 10, offset the superimposition error, and also has excellent adhesiveness. At the same time, the placement position of the ceramic chips 10 reduces the risk of cracking of the ceramic chips 10;

[0030] And a MOS board 18 is installed inside the placement groove 7 on one side of the bonding groove 8 through fixing studs 14. Limiting blocks 17 are fixed on the inner walls of the placement groove 7 on the outer side of the MOS board 18, and the outer diameter of the limiting blocks 17 is smaller than the inner diameter of the cavity on the surface of the MOS board 18. The limiting blocks 17 and the cavity form a clamping structure, facilitating the fixation between the MOS board 18 and the placement groove 7;

[0031] MOS tubes 15 are fixed on the surface of the MOS board 18 at equal intervals, and a bottom board 19 is installed on the surface of the MOS board 18 on one side of the MOS tubes 15. Connecting plates 13 are fixed at the ends of the bottom board 19 away from the MOS board 18. Blocks 12 are fixed between the MOS tubes 15 on the surface of the MOS board 18, and one ends of the blocks 12 are fixedly connected to the bottom board 19, facilitating the use of this power device heat conduction and insulation mechanism;

[0032] Clamping mechanisms 16 are provided inside the placement groove 7 on the outer side of the MOS board 18. The clamping mechanisms 16 are sequentially provided with a first groove body 1601, a rubber clamping plate 1602, and a second groove body 1603 inside. First groove bodies 1601 are provided inside the MOS board 18 on one side of the rubber clamping plate 1602, and the rubber clamping plate 1602 is fixedly connected to the inner wall of the first groove body 1601. Second groove bodies 1603 are provided inside the power device base body 1 on the side of the rubber clamping plate 1602 away from the first groove body 1601, and the first groove body 1601 and the second groove body 1603 cooperate with each other;

[0033] When using this mechanism, first, the rubber clamping plates 1602 inside the first groove bodies 1601 on both sides of the MOS board 18 are clamped with the second groove bodies 1603 inside the power device base body 1, and then the cavity on the surface of the MOS board 18 is clamped with the limiting blocks 17 inside the placement groove 7. When being impacted, the second groove bodies 1603 and the rubber clamping plates 1602 inside the first groove bodies 1601 will prevent the MOS board 18 from directly colliding with the power device base body 1. At the same time, the rubber clamping plates 1602 have a certain elasticity, thus realizing the protection performance when using this power device heat conduction and insulation mechanism;

[0034] On the outer wall of the power device substrate 1, heat dissipation plates 9 are fixed at equal intervals, and the heat dissipation plates 9 are symmetrically distributed about the center line of the power device substrate 1, which enhances the heat dissipation performance of the heat conduction and insulation mechanism of the power device;

[0035] On the outer walls on both sides of the power device substrate 1, outer shells 2 are fixed at equal intervals, and threaded counterbores 3 are arranged inside the outer shells 2. On the outer wall of the power device substrate 1 away from the outer shell 2, side plates 4 are fixed, and threaded grooves 5 are arranged inside the side plates 4, which facilitates the combined assembly of the heat conduction and insulation mechanism of the power device.

[0036] Working principle: When using the heat conduction and insulation mechanism of the power device, first, a layer of heat conduction glue 11 is added between the ceramic sheet 10 and the power device substrate 1. The heat conduction glue 11 is a viscous paste before curing, has a certain fluidity, can elastically release the pressure applied to the ceramic sheet 10 body, offset the superposition error, and also has excellent adhesiveness. Even after the limiting plate 6 fails or the ceramic sheet 10 breaks, the ceramic sheet 10 will still not undergo horizontal displacement and continue to conduct heat. Then, after applying the ceramic sheet 10 in the bonding groove 8, four ceramic sheets 10 with a size approximately the same as that of the MOS transistor 15 are arranged in a certain direction. If a whole ceramic sheet 10 is used, four axial forces of different sizes will appear inside the ceramic sheet 10, thus breaking the internal stress balance of the material and finally causing the material to break. Therefore, we use four ceramic sheets 10 to reduce the uneven stress on the ceramic sheet 10 and reduce the risk of breakage. Finally, first, the rubber clamping plates 1602 inside the first groove bodies 1601 on both sides of the MOS board 18 are clamped with the second groove bodies 1603 inside the power device substrate 1, and then the cavity on the surface of the MOS board 18 is clamped with the limiting blocks 17 inside the placement groove 7. When an impact occurs, the rubber clamping plates 1602 inside the second groove bodies 1603 and the first groove bodies 1601 will prevent the MOS board 18 from directly colliding with the power device substrate 1. At the same time, the rubber clamping plates 1602 have a certain elasticity, thus realizing the protection performance when the heat conduction and insulation mechanism of the power device is used, and finally completing the work of the heat conduction and insulation mechanism of the power device.

[0037] For those skilled in the art, it is obvious that the present invention is not limited to the details of the above exemplary embodiments, and can be implemented in other specific forms without departing from the spirit or basic characteristics of the present invention. Therefore, from any point of view, the embodiments should be regarded as exemplary and non-restrictive. The scope of the present invention is defined by the appended claims rather than the above description. Therefore, all changes falling within the meaning and scope of the equivalent elements of the claims are intended to be included in the present invention. Any reference signs in the claims should not be regarded as limiting the claimed rights.

Claims

1. A heat-conducting and insulating mechanism for a power device, comprising a power device substrate (1), a limiting plate (6), a placement groove (7), an adhesive groove (8), and a MOS board (18), characterized in that: A placement groove (7) is arranged inside the power device substrate (1), and a limiting plate (6) is fixed on the inner wall of the placement groove (7). An adhesive groove (8) is arranged at equal intervals inside the limiting plate (6). A MOS board (18) is installed inside the placement groove (7) on one side of the adhesive groove (8) through a fixing stud (14). A MOS tube (15) is fixed on the surface of the MOS board (18) at equal intervals, and a bottom plate (19) is installed on the surface of the MOS board (18) on one side of the MOS tube (15). A clamping mechanism (16) is arranged inside the placement groove (7) outside the MOS board (18); Thermal conductive glue (11) is smeared on the inner side walls of the adhesive grooves (8). Ceramic chips (10) are arranged at the four corner positions inside the adhesive grooves (8) on one side of the thermal conductive glue (11), and one side of the ceramic chips (10) close to the thermal conductive glue (11) is adhered to one side of the thermal conductive glue (11); The clamping mechanism (16) sequentially comprises a first groove body (1601), a rubber clamping plate (1602), and a second groove body (1603). A first groove body (1601) is arranged inside the MOS board (18) on one side of the rubber clamping plate (1602), and the rubber clamping plate (1602) is fixedly connected to the inner wall of the first groove body (1601). A second groove body (1603) is arranged inside the power device substrate (1) on the side of the rubber clamping plate (1602) away from the first groove body (1601), and the first groove body (1601) cooperates with the second groove body (1603).

2. The thermal conductive and insulating mechanism of a power device according to claim 1, wherein: Heat dissipation plates (9) are fixed on the outer wall of the power device substrate (1) at equal intervals, and the heat dissipation plates (9) are symmetrically distributed about the center line of the power device substrate (1).

3. The thermally conductive and insulating mechanism of a power device according to claim 1, wherein: Housings (2) are fixed on the outer walls on both sides of the power device substrate (1) at equal intervals, and threaded counterbores (3) are arranged inside the housings (2).

4. A thermal conductive and insulating mechanism for a power device according to claim 3, characterized in that: Side plates (4) are fixed on the outer wall of the power device substrate (1) on the side away from the housings (2), and threaded grooves (5) are arranged inside the side plates (4).

5. The thermal conductive and insulating mechanism of a power device according to claim 1, characterized in that: Limiting blocks (17) are fixed on the inner walls of the placement grooves (7) outside the MOS board (18), and the outer diameter of the limiting blocks (17) is smaller than the inner diameter of the cavity on the surface of the MOS board (18). The limiting blocks (17) and the cavity form a clamping structure.

6. The thermal conductive and insulating mechanism of a power device according to claim 1, wherein: Connecting plates (13) are fixed at one ends of the bottom plates (19) away from the MOS board (18). Blocks (12) are fixed between the MOS tubes (15) on the surface of the MOS board (18), and one ends of the blocks (12) are fixedly connected to the bottom plates (19).

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