Device for multi-stream precursor dosing

Abstract

A gas distribution device is provided having a delivery channel having an inlet end, an outlet end, and a plurality of holes spaced along the length. The delivery channel is divided into a plurality of partitions by a partition. Each of the plurality of partitions has an inlet and an outlet.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to devices and methods for flowing gases into a processing chamber. More specifically, embodiments of the present disclosure relate to linear flow devices for directing gas flow into a processing chamber, such as an atomic layer deposition chamber or a chemical vapor deposition chamber. Background Art

[0002] In the field of semiconductor processing, flat panel display processing, or other electronic component processing, vapor deposition processes play an important role in depositing materials on substrates. As the geometry of electronic components continues to shrink and the density of components continues to increase, the size and aspect ratio of features are becoming more and more aggressive (e.g., feature size of 0.07 μm and aspect ratio of 10 or more). Therefore, conformal deposition of materials to form these components is becoming more and more important.

[0003] During the atomic layer deposition (ALD) process, reactive gases are introduced into a processing chamber that houses a substrate. Generally speaking, an area of ​​the substrate is contacted with a first reactant, which is absorbed onto the substrate surface. The substrate is then contacted with a second reactant, which reacts with the first reactant to form a deposited material. A purge gas may be introduced between the delivery of each reactive gas to ensure that the reaction is performed only on the substrate surface.

[0004] CVD and ALD processes may exhibit precursor dose effects due to non-uniformity of precursor flow in a process chamber. Specifically, center-to-edge uniformity often exhibits a pattern related to the configuration of the showerhead holes. The size and spacing of the holes can be varied to increase uniformity. However, modifications to the showerhead can be difficult, expensive, and irreversible. Therefore, there is a need in the art for an apparatus and method for delivering a uniform gas flow to a process chamber. Summary of the invention

[0005] One or more embodiments of the present disclosure relate to a gas distribution apparatus for controlling the flow of gas into a processing chamber. A spiral gas delivery channel has a certain length, wherein a plurality of holes are spaced along the length. The spiral gas delivery channel has at least one dividing wall, and the at least one dividing wall divides the gas delivery channel into a plurality of gas delivery zones. Each of the gas delivery zones has a certain zone length, an inlet, and an outlet.

[0006] Additional embodiments of the present disclosure relate to a gas distribution device including a plate having a front side surface and a rear side surface. A first gas delivery channel is recessed in the rear side surface of the plate. The first gas delivery channel has a spiral shape of a certain length and is divided into a plurality of first partitions along the length by a partition wall. Each first partition has an inlet, an outlet, and a certain partition length. A second gas delivery channel is recessed in the rear side surface of the plate. The second gas delivery channel has a spiral shape of a certain length that is intertwined with the first gas delivery channel. The second gas delivery channel is divided into a plurality of second partitions along the length by a partition wall. Each second partition has an inlet, an outlet, and a partition length. A plurality of first holes are spaced apart along the length of the gas delivery channel. Each of the plurality of holes extends from the front side surface of the plate to the first gas delivery channel. A plurality of second holes are spaced apart along the length of the second gas delivery channel. Each of these second holes extends from the front side surface of the plate to the second gas delivery channel.

[0007] Another embodiment of the present disclosure relates to a method of providing a gas flow to a processing area of ​​a processing chamber. A first gas flow is provided to a first gas delivery channel in a gas distribution device and a second gas flow is provided to a second gas delivery channel in the gas distribution device. The first gas delivery channel and the second gas delivery channel are formed in a plate. The first gas delivery channel has a spiral shape of a certain length and a plurality of holes spaced along the length. The first gas delivery channel has at least one partition wall, and the at least one partition wall divides the first gas delivery channel into a plurality of first partitions. Each first partition has a certain partition length, an inlet, and an outlet. The second gas delivery channel has a spiral shape of a certain length and a plurality of holes spaced along the length. The second gas delivery channel has at least one partition wall, and the at least one partition wall divides the second gas delivery channel into a plurality of second partitions. Each second partition has a certain partition length, an inlet, and an outlet. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] As a means by which the above-described features of the present disclosure may be obtained and understood in detail, a more detailed description of the present disclosure briefly summarized above may be obtained by reference to the embodiments of the present disclosure, which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate only typical embodiments of the present disclosure, and therefore these drawings should not be considered as limiting the scope of the present disclosure, as the present disclosure may admit to other equally effective embodiments.

[0009] Figure 1 A top view showing a gas distribution device according to one or more embodiments of the present disclosure;

[0010] Figure 2shows a cross-sectional isometric view of a gas distribution apparatus according to one or more embodiments of the present disclosure;

[0011] Figure 3 An isometric view showing a gas distribution device according to one or more embodiments of the present disclosure;

[0012] Figure 4 A bottom view showing a gas distribution device according to one or more embodiments of the present disclosure;

[0013] Figure 5 A partial cross-sectional view showing a gas distribution device according to one or more embodiments;

[0014] Figure 6 A top view showing a gas distribution device according to one or more embodiments of the present disclosure;

[0015] Figure 7 A partial cross-sectional view showing a gas distribution device according to one or more embodiments of the present disclosure;

[0016] Figure 8 A view showing an exploded partial cross-sectional view of a gas distribution device in accordance with one or more embodiments of the present disclosure;

[0017] Fig. 9 A cross section showing an isometric view of a gas distribution apparatus according to one or more embodiments of the present disclosure;

[0018] Fig.10 An isometric view showing a gas distribution device according to one or more embodiments of the present disclosure;

[0019] Fig.11 A schematic representation showing multi-zoned gas flow into a processing chamber;

[0020] Fig.12 A top view showing a gas distribution device according to one or more embodiments of the present disclosure;

[0021] Fig.13 A top view showing a gas distribution device according to one or more embodiments of the present disclosure;

[0022] Fig.14 A top view showing a gas distribution device having a manifold according to one or more embodiments of the present disclosure;

[0023] Fig.15 shows a cross-sectional view of a manifold in accordance with one or more embodiments of the present disclosure;

[0024] Fig.16AA top view showing a gas distribution device having a manifold according to one or more embodiments of the present disclosure;

[0025] Fig. 16B A schematic cross-sectional view showing a manifold according to one or more embodiments of the present disclosure; and

[0026] Fig.17 A schematic diagram showing a gas distribution apparatus having a manifold according to one or more embodiments of the present disclosure is shown. DETAILED DESCRIPTION

[0027] Embodiments of the present disclosure relate to gas distribution apparatus for use in chemical vapor deposition type processes. One or more embodiments of the present disclosure relate to atomic layer deposition processes and apparatus (also referred to as cyclic deposition) incorporating the described gas distribution apparatus. The described gas distribution apparatus may be referred to as a showerhead or a gas distribution plate, but those skilled in the art will recognize that the shape of the apparatus need not resemble a showerhead or plate. The terms "showerhead" and "plate" should not be viewed as limiting the scope of the present disclosure.

[0028] Figures 1 to 4 An embodiment of a gas distribution device 400 having a gas delivery channel 402 is depicted. In this embodiment, the gas delivery channel 402 is recessed into the back side 401 of the gas distribution plate 403. The embodiment shown has a large inner section recessed into the back side 401 of the gas distribution plate 403, wherein the delivery channel 402 is further recessed into the inner section. This allows the addition of a rear cover 407, which can be placed in the recessed area in the back side 401 to enclose the delivery channel 402, such as Figure 2 . The rear cover 407, when inserted into the recessed rear side 401 of certain embodiments, creates a substantially flush rear surface of the gas distribution plate. Those skilled in the art will appreciate that the rear cover 407 need not be mounted within the recessed area of ​​the rear side 401 of the gas distribution plate 403, but may also rest directly on the rear side 401 of the gas distribution plate 403. In such embodiments, there is no large recessed area into which the delivery channel is further recessed. Instead, the delivery channel is recessed directly into the rear side 401 of the gas distribution plate 403.

[0029] The rear cover 407 may have openings to allow the inlet and outlet tubes to pass through to allow fluid communication with the delivery channel 402. Figure 2 and 3 The inlet and outlet tubes may be an integral part of the rear cover 407, or may be separate components connected to the rear cover 407 to prevent or minimize fluid leakage. A plurality of holes 408 extend through the gas distribution plate 403 to the front side 405 of the gas distribution plate 403. These holes may be Figure 1 ,2 , and 4. The plurality of holes 408 can be evenly spaced along the length of the delivery channel, or can have varying spacing along the length of the channel. Variable spacing can help create a more uniform gas flow from the delivery channel at points along the delivery channel. For example, in a gas delivery channel having a complex shape, the spacing of the holes can vary along the length.

[0030] In the illustrated embodiment, the gas distribution plate 403 is circular and the delivery channel 402 forms a spiral shape. The inlet end 404 is marked at the outside of the spiral in the outer peripheral region 420 of the gas distribution plate 403, while the outlet end 406 is located at the center of the spiral in the central region 422 of the gas distribution plate 403. Those skilled in the art will appreciate that the inlet end 404 and the outlet end 406 can be reversed, with the inlet end 404 located at the center of the spiral and the outlet end 406 located at the outside of the spiral. In some embodiments, one of the inlet end 404 and the outlet end 406 is located in the outer peripheral region 420 of the gas distribution plate 403, and the other of the inlet end 404 and the outlet end 406 is located in the central region 422 of the gas distribution plate 403. In one or more embodiments, the inlet end 404 is located at the outer peripheral region 420 of the gas distribution plate 403, and the outlet end 406 is located at the central region 422 of the gas distribution plate 403. In certain embodiments, the outlet port 406 is positioned at an outer peripheral region 420 of the gas distribution plate 403 , and the inlet port 404 is positioned at a central region 422 of the gas distribution plate 403 .

[0031] exist Figure 2 and 3 4, the inlet end 404 and the outlet end 406 are depicted as small tubes extending from the back cover 407 of the gas distribution plate 403. The tube extends between the inlet 410 and the back cover 407 through the inlet valve 414. Another tube can extend between the outlet 412 and the back cover 407 through the outlet valve 416. The tube can be connected to the back cover 407 by any suitable connector known to those skilled in the art, and can be sealed to prevent leakage of the fluid flowing through the tube into the delivery channel 402. Suitable sealing devices include, but are not limited to, an o-ring positioned between the flange 424 and the back cover 407. The flange 424 can be integrally formed with the tube, or can be a separate component that holds the tube to the back cover. The flange 424 can be connected to the back cover 407 by any suitable mechanical connector (including, but not limited to, screws).

[0032] Figure 5 A cross-sectional view of a portion of a delivery channel 402 and holes 408 in a gas distribution plate 403 is shown in accordance with one or more embodiments of the present disclosure. Those skilled in the art will appreciate that Figure 5The delivery channels and holes described in are illustrative only and should not be considered as limiting the scope of the present disclosure. Those skilled in the art will appreciate that there are other ways to generate flow from the delivery channel 402 through the gas distribution plate 403. Figure 5 The delivery channel 402 shown in FIG. 4 has two parts, namely an upper part 832 and a lower part 830. Although these parts are shown as separate areas, it will be understood that there can be a seamless transition between the upper part 832 and the rounded lower part 830.

[0033] In addition, it will be appreciated that the upper portion 832 is optional and need not be included in the delivery channel 402. In the absence of the upper portion 832, the lower portion 830 is the only portion. Thus, the delivery channel can have any suitable shape. In some embodiments, the shape of the delivery channel is such that the gas flow through the channel is not substantially interfered with.

[0034] The upper portion 832 may have any suitable shape. Figure 5 In the embodiment shown in FIG. 4 , the upper portion 832 has walls extending orthogonally to the surface of the rear side 401 of the gas distribution plate 403. However, it will be appreciated that the upper portion 832 may have walls beveled from the square to the rear side 401. The bevel may provide a larger opening at the rear side 401 of the gas distribution plate 403 that tapers to a smaller opening. Additionally, the bevel may also provide a smaller opening at the rear side 401 that tapers to a larger opening. The length of the upper portion 832 may be modified as desired.

[0035] In some embodiments, the upper portion has sides that are substantially perpendicular to the back side 401 of the gas distribution plate 403 and extend a length L in the range of about 0.01 inches to about 0.3 inches below the surface of the back side 401. As used in the specification and the appended claims, the term "substantially perpendicular to..." means that the wall of the upper portion has an angle in the range of about 85 degrees to about 95 degrees relative to the back side of the gas distribution plate. In some embodiments, the length L of the upper portion extending below the surface of the back side is in the range of about 0.02 inches to about 0.2 inches, or in the range of about 0.05 inches to about 0.15 inches, or in the range of about 0.08 inches to about 0.12 inches. In one or more embodiments, the upper portion extends a length of about 0.1 inches below the surface of the back side.

[0036] The circular lower portion 830 may have any suitable cross-section, including but not limited to semicircular and semi-elliptical. The width of the circular lower portion (also referred to as the diameter of the circular lower portion) may be modified as needed. The width of the upper portion may be modified as needed. The diameter of the delivery channel may generally have an impact on the number of turns in the spiral. In some embodiments, such as Figure 5As shown in , the width of the upper portion is approximately equal to the diameter of the lower portion. The delivery channel of various embodiments has a diameter in the range of about 0.3 inches (~7.5mm) to about 0.45 inches (~11.5mm), or in the range of about 0.325 inches (~8.25mm) to about 0.425 inches (~11mm), or in the range of about 0.35 inches (~9mm) to about 0.40 inches (~10mm). In one or more embodiments, the delivery channel has a diameter of about 0.375 inches (~9.5mm).

[0037] The specific shape of the holes 408 may vary depending on the desired gas flow through the holes. Figure 5 In an embodiment of the present invention, the hole 408 has three distinct sections; a first section 834, a second section 836, and a third section 838. Again, the number of sections and the shape of the sections are merely illustrative of one embodiment and should not be considered limiting of the scope of the present disclosure. The first section 834 extends from the circular lower portion 830 of the delivery channel 402 toward the front side 405 of the gas distribution plate 403. The first section 834 has a first diameter D1. The second section 836 extends from the first section 834 toward the front side 405 and has a diameter that tapers from the first diameter D1 to a second diameter D2 that is generally smaller than the first diameter. The third section 838 extends from the end of the second section 836 and ends at the front side 405 of the gas distribution plate 403. At the intersection of the third section 838 and the front side 405, a hole 840 is formed. Gas flowing through the delivery channel 402 exits the gas distribution plate 403 through this hole 840 and enters the processing chamber. Hole 840 has a diameter that is approximately the same as second diameter D2. In various embodiments, the diameter of hole 840 is in the range of about 0.01 inches to about 0.25 inches, or in the range of about 0.02 inches to about 0.2 inches, or in the range of about 0.03 inches to about 0.15 inches, or in the range of about 0.04 inches to about 0.1 inches. In some embodiments, hole 840 has a diameter of less than about 0.1 inches, or less than about 0.08 inches, or less than about 0.06 inches, or less than about 0.04 inches, or less than about 0.02 inches, or less than about 0.01 inches.

[0038] As the delivery channels spiral from the outer periphery of the gas distribution plate toward the central region (or vice versa), it may be observed in cross-section that there appear to be multiple adjacent channels, even though it may be a single channel. Figure 2Such multiple channels appear to be shown. The channels, or the spacing between the turns of the spiral, are separated by a certain distance. In some embodiments, the distance between the channels, or the turns of a single channel, measured relative to the center is in the range of about 0.375 inches to about 0.475 inches, or in the range of about 0.40 inches to about 0.45 inches, or in the range of about 0.41 inches to about 0.43 inches. In one or more embodiments, the average distance between the centers of adjacent channels is about 0.42 inches.

[0039] Figure 1-4 The length of the gas passages shown in the figure can vary depending on many factors, including but not limited to the diameter of the passages and the distance between adjacent passages. In various embodiments, the delivery passage has a length in the range of about 140 inches to about 340 inches, or in the range of about 180 inches to about 300 inches, or in the range of about 200 inches to about 280 inches, or in the range of about 220 inches to about 260 inches. In one or more embodiments, the delivery passage has a length of about 240 inches.

[0040] The number of holes also depends on many factors, including but not limited to the length of the delivery channel and the spacing of the holes. In some embodiments with a single spiral channel, there are holes in the range of about 300 and 900, or holes in the range of about 400 to about 800, or holes in the range of about 500 to about 700. In various embodiments, there are greater than about 300, 400, 500, 600, 700 or 800 holes along the length of the passage. In one or more embodiments, there are about 600 holes along the length of the delivery channel.

[0041] In one embodiment, if Figure 1 , a gas delivery plate 403 includes a single delivery channel 402 in the back side of the gas delivery plate 403. The delivery channel 402 has an inlet end 404 located in an outer peripheral region 420 of the gas distribution plate 403. The delivery channel 402 follows an inward spiral path from the inlet end 404 to an outlet end 406 located in a central region 422 of the gas distribution plate 403. The delivery channel 402 has an overall length (defined as the distance between the inlet end 404 and the outlet end 406) of about 240 inches. A plurality of holes 408 are spaced along the overall length of the delivery channel 402. There are between about 500 and about 700 holes along the overall length of the delivery channel 403. The delivery channel 403 has an average diameter of about 0.375 inches, and the centers of adjacent portions of the spiral channel are spaced about 0.42 inches apart.

[0042] Another embodiment of the present disclosure is shown in Figures 6 to 10The gas distribution device 900 includes two delivery channels 902a, 902b recessed in the back side 901 of the gas distribution plate 903. The first delivery channel 902a has a first inlet end 904a and a first outlet end 906a and a plurality of first holes 908a spaced along the length of the first delivery channel 902a. The second delivery channel 902b has a second inlet end 904b, a second outlet end 906b, and a plurality of second holes 908b spaced along the length of the second delivery channel 902b.

[0043] The first inlet 910a is connected to the first inlet end 904a of the first delivery channel 902a. The first inlet 910a is suitable for connecting to a gas source. The first outlet 912a is connected to the first outlet end 906a of the first delivery channel 902a. The first outlet 912a is suitable for connecting to a vacuum source. The second inlet 910b is connected to the second inlet end 904b of the second delivery channel 902b. The second inlet 910b is suitable for connecting to a gas source. The second outlet 912b is connected to the second outlet end 906b of the second delivery channel 902b. The second outlet 912a is suitable for connecting to a vacuum source.

[0044] exist Figures 6 to 10 In the embodiment shown in the figure, each of the delivery channels 902a, 902b forms a spiral shape. One or more embodiments (such as the embodiments shown in the figures) have two delivery channels 902a, 902b that are intertwined along the length of the spiral shape. Those skilled in the art will appreciate that the two delivery channels 902a, 902b can have shapes other than spirals and do not need to be intertwined. In some embodiments, a plurality of first holes 908a and second holes 908b extend through the gas distribution plate 903 to the front side 905 of the gas distribution plate 903.

[0045] In some embodiments, each of the delivery channels 902a, 902b forms a spiral shape, one of the inlet end 904a, 904b and the outlet end 906a, 906b of the spiral shape is positioned in the outer peripheral region 920 of the gas distribution plate 903, and the other of the inlet end 904a, 904b and the outlet end 906a, 906b is positioned in the central region 922 of the gas distribution plate 903. In one or more embodiments, the inlet ends 904a, 904b of both channels 902a, 902b are positioned in the outer peripheral region 920, and the inlet ends 904a, 904b of both channels 902a, 902b are positioned in the central region 922 of the gas distribution plate 903. In certain embodiments, the inlet ends 904a, 904b of both channels 902a, 902b are positioned in the central region 922, and the inlet ends 904a, 904b of both channels 902a, 902b are positioned in the outer peripheral region 920 of the gas distribution plate 903. In one or more embodiments, one of the inlet ends 904a, 904b is positioned in the outer peripheral region 920, and the other of the inlet ends 904b, 904a is positioned at the central region 922, wherein the outlet ends 906a, 906b are located at the other end of each individual delivery channel 902a, 902b.

[0046] Figure 8 Show Figure 6 907 of the gas distribution plate 903 shown in FIG. There are four holes (not numbered) located in the rear cover 907, which are generally aligned with the inlet ends 904a, 904b and outlet ends 906a, 906b of the delivery channels 902a, 902b. The holes can be used to provide access points for connecting to the channels 902a, 902b in the inlets 910a, 910b and outlets 912a, 912b. In some embodiments, the inlets 910a, 910b and outlets 912a, 912b are integrally formed with the rear cover 907. In addition, as shown in FIG. Fig. 9 and 10 As seen in FIG. 1 , there may be one or more inlet valves 914a, 914b and outlet valves 916a, 916b.

[0047] Fig. 9 and 10A perspective view of a gas distribution device 900 according to various embodiments of the present disclosure is shown. Inlet ports 910a, 910b are shown connected to a rear cover 907 with flanges 924a, 924b. The connection and airtight sealing of flanges 924a, 924b can be achieved by any suitable mechanism and technique as known to those skilled in the art. Outlets 912a, 912b can also be connected to the rear cover 907 with flanges or with a block connector 925. Block 925 can be integrally formed with the rear cover 907 or can be a separate component. Block 925 can provide additional support and space for outlet valves 916a, 916b, thereby allowing the connecting pipe to protrude from the rear cover 907 at a certain angle. Although the inlets 910a, 910b and inlet valves 914a, 914b are shown as being located on the outer peripheral region 920 of the gas distribution plate 903, and the outlets 912a, 912b and outlet valves 916a, 916b are shown as being located in the central region 922 of the gas distribution plate 903, it will be understood that these elements may also be reversed or mixed, and the figures illustrate only one embodiment.

[0048] As the delivery channel spirals from the outer periphery of the gas distribution plate to the central area (and vice versa), it can be observed in the cross section that there seem to be multiple adjacent channels. When the spirals are intertwined, the gas in each adjacent channel comes from another inlet 910a, 910b. The channel is separated from the adjacent channel by a certain distance. In some embodiments, the distance between the channels measured relative to the center of the channel is in the range of about 0.375 inches to about 0.475 inches, or in the range of about 0.40 inches to about 0.45 inches, or in the range of about 0.41 inches to about 0.43 inches. In one or more embodiments, the average distance between the centers of adjacent channels is about 0.42 inches.

[0049] Figure 6-10 The length of the gas channels shown in the can vary depending on many factors, including but not limited to the diameter of the channels and the distance between adjacent channels. In various embodiments, each of the delivery channels has a length in the range of about 70 inches to about 170 inches, or in the range of about 90 inches to about 150 inches, or in the range of about 100 inches to about 140 inches, or in the range of about 110 inches to about 130 inches. In one or more embodiments, the delivery channel has a length of about 120 inches.

[0050] The number of holes also depends on many factors, including but not limited to the length of the delivery channel and the spacing of the holes. In some embodiments with a single spiral channel, there are holes in the range of about 150 and 450, or holes in the range of about 200 to about 400, or holes in the range of about 250 to about 350. In various embodiments, there are greater than about 150, 200, 250, 300, 350, or 400 holes along the length of the channel. In one or more embodiments, there are about 300 holes along the length of each in the delivery channel.

[0051] Many CVD / ALD processes show a precursor dose effect on the uniformity of metal deposition on the wafer from the center to the edge of the wafer. The variable hole size along the length of the gas delivery channel or in the showerhead can be changed to improve the uniformity of the deposition process. Some embodiments of the present disclosure provide a spiral gas distribution device with improved center-to-edge non-uniformity. Some embodiments incorporate different gas delivery partitions with different precursor flow rates to improve uniformity. In some embodiments, orifices of different sizes in the flow paths leading to various partitions are used to control the precursor flow rate.

[0052] In some embodiments, the spiral showerhead is provided with different partitions for precursor flows to enter the chamber. The showerhead can be designed with N partitions (e.g., N=3) for multiple precursors for CVD / ALD processes. For each precursor, the flow in each partition can be controlled by a separate valve (e.g., a PLC valve), and the dosage of the precursor can be controlled by a separate orifice with a variable size. The N valves can be operated "on and off" synchronously during the sequential exposure of the precursors to the wafer.

[0053] Some embodiments provide a gas line manifold to provide gas flow to different partitions. The manifold of some embodiments includes an integrated purge for the upstream side of the purge chamber and maintains a positive pressure at the upstream side. The manifold can be constructed to allow precursors to flow through showerheads in N partitions and use a single dump line (dumpline) for each precursor (e.g., two dump lines are used for two precursors). In some embodiments, a needle valve is used instead of an orifice to increase process adjustability. In some embodiments, a needle valve and an orifice are used together to control the process. Some embodiments of the present disclosure provide a device for maintaining multiple gas flows based on process requirements. Some embodiments provide a device with an improved equilibrium flow time, i.e., the change in gas flow reaches the wafer surface faster than a conventional gas distribution device.

[0054] Fig.11A schematic representation of a flow pattern according to one or more embodiments is provided. A substrate 10 is positioned on a substrate support 12 so that the substrate is spaced a distance from a showerhead 14. The illustrated flow pattern has three partitions: an inner partition 21, a middle partition 22, and an outer partition 23. The inner partition 21 is positioned at the center of the wafer, and the outer partition 23 is positioned at the outer periphery of the wafer. The amount of precursor 31 flowing in the inner partition 21 is less than the amount of precursor 32 flowing in the middle partition 22, and the amount of precursor 32 flowing in the middle partition 22 is less than the amount of precursor 33 flowing in the outer partition 23 (indicated by arrows of different lengths). The illustrated embodiment is only one possible configuration and should not be considered as limiting the scope of the present disclosure. For example, the number of partitions, relative precursor amounts, and / or flow rates can be changed to improve uniformity.

[0055] Fig.12 A gas distribution device 100 is shown in accordance with one or more embodiments of the present disclosure. The gas distribution device 100 includes a plate 110 having a rear surface 112 and a front surface (not visible). A gas delivery channel 120 is located on the rear surface 112 of the plate 110. In some embodiments, the delivery channel 120 is recessed into the rear surface 112 of the plate 110, such as Figure 2 shown in.

[0056] The gas delivery channel 120 is depicted as a spiral channel. This represents only one possible configuration. In some embodiments, the gas delivery channel 120 is an irregular shape.

[0057] The spiral gas delivery channel 120 has a total length defined by the outermost point 121 of the spiral along the channel 120 to the innermost point 122. A plurality of holes are spaced along the length of the gas delivery channel 120. Figures 1 to 10 These holes are seen in the embodiment of FIG. 1 and are shown for clarity from Fig.12 and 13 Omit these holes.

[0058] The spiral gas delivery channel 120 has at least one partition 130 along the length of the channel 120. The partition 130 divides the channel 120 into a plurality of partitions. In the illustrated embodiment, there are two partitions 130 that divide the channel 120 into the following three partitions: an inner partition 131, an intermediate partition 132, and an outer partition 133. Each of the gas delivery partitions has a partition length measured from the innermost point and the outermost point of the partition along the length of the spiral gas delivery channel 120. Each of the gas delivery partitions 131, 132, 133 has an inlet 131a, 132a, 133a and an outlet 131b, 132b, 133b. The inlet and outlet are illustrated as circles in the diagram to indicate which end of the partition length is being discussed. The inlet opening and outlet opening may be located in the back cover and aligned with the markings indicated on the drawing.

[0059] In the illustrated embodiment, the inlet 131a, 132a, 133a of each of the partitions is shown as being located at the outer end of the spiral (further away from the center), and the outlet 131b, 132b, 133b is shown as being located at the inner end of the spiral (closer to the center). However, the inlet and outlet can be reversed so that the inlet is closer to the inner end of the spiral and the outlet is closer to the outer end. In some embodiments, some of the inlets are located at the inner end of the partitions, and at least one of the outlets is located at the inner end of at least one partition.

[0060] The accompanying drawings illustrate an embodiment in which three partitions are formed by a divider. However, there may be more or less than three partitions. In some embodiments, there are two partitions. In some embodiments, there are four, five, six, or more partitions.

[0061] Fig.13 Another embodiment of the present disclosure is shown in which there are two delivery channels: a first delivery channel 120 and a second delivery channel 125. Each of the first delivery channel 120 and the second delivery channel 125 is recessed into the back side 112 of the plate 110. In the illustrated embodiment, each of the delivery channels 120, 125 forms a spiral shape that is intertwined with each other. The divider 130 divides each of the channels 120, 125 into three partitions. The first delivery channel 120 is divided into an inner partition 131, a middle partition 132, and an outer partition 133, and the second delivery channel 125 is divided into an inner partition 136, a middle partition 137, and an outer partition 138.

[0062] In some embodiments, the inlets 131a, 132a, 133a, 136a, 137a, 138a (e.g. Fig.13) is positioned at the outer end of the partition, and each of the outlets 131b, 132b, 133b, 136b, 137b, 138b is positioned at the inner end of the partition. In some embodiments, each of the inlets is located at the inner end of the partition, and each of the outlets is located at the outer end of the partition. In some embodiments, each of the inlets of the partitions of the first delivery channel 120 is positioned at the inner end of the partition, and each of the inlets of the partitions of the second delivery channel 125 is positioned at the outer end of the partition.

[0063] Fig.14 A schematic top view of a gas distribution device 100 is shown in some embodiments. The back cover 107 is sized to cover the plate and enclose the gas delivery channels, such as Figure 1 . The gas distribution manifold 200 is located on the rear cover 107. The gas distribution manifold 200 has a plurality of inlet passages 210 (shown in phantom) and a plurality of outlet passages 212 (shown in phantom). The inlet passages 210 provide fluid communication between the partition inlet and the gas source (not shown), and the outlet passages 212 provide fluid communication between the partition outlet and the exhaust device (not shown).

[0064] Fig.15 A cross-sectional view of manifold 200 is shown illustrating internal outlet passages 212. In some embodiments, the zoned outlets of the first delivery passage are fluidly connected to the exhaust through multiple outlet passages in the manifold that merge into a first exhaust port 214a. Fig.15 The six outlet passages 212 shown in FIG. Fig.14 In some embodiments, the zoned outlets of the second delivery channel are fluidly connected to the exhaust through a plurality of outlet passages 212 in the manifold 200 that merge into a second exhaust port 214b.

[0065] Refer again Fig.14 In some embodiments, each manifold inlet opening 211 is in fluid communication with a valve 220 and an optional orifice 230. In some embodiments, there are no orifices 230. In some embodiments, there are fewer orifices 230 than valves 220. In some embodiments, each valve 220 has an orifice 230. When used, the orifices 230 can be different so that the amount of precursor flowing through the conduit 222 to the valve 220 can be controlled. A smaller sized orifice 230 can be used to limit the amount of precursor, and a larger sized orifice 230 can be used to increase the amount of precursor flowing into the manifold 200.

[0066] Some embodiments of the manifold 200 include a purge inlet 240 that can be connected to a purge gas source. The purge inlet can be used to pass the purge gas through the channel 150 (see Fig.12 and13 ) flows into the processing chamber. In some embodiments, the purge inlet can be used to provide a positive pressure upstream of the chamber when no precursor flows through the valve 220.

[0067] In some embodiments, each of the valves 220 is in communication with the controller 250. The controller 250 of some embodiments is configured to simultaneously open all valves 220 in fluid communication with one of the delivery channels. For example, all valves providing gas flow to a first gas delivery channel may be simultaneously opened, and all valves providing gas flow to a second gas delivery channel may be closed. The valve states may be reversed such that the second gas delivery channel is enabled and the first gas delivery channel is disabled. By flowing only one of the precursors at a time, an atomic layer deposition process may be performed. In some embodiments, two gas delivery channels are enabled simultaneously to provide a chemical vapor deposition type process. In some embodiments, one or more valves are in fluid communication with the exhaust line 217. For example, in Fig.14 In the embodiment shown in , the exhaust lines 217 merge into a single exhaust line at the merge point 216 and have an optional valve 218 upstream of the merge point 216 and an optional valve 219 downstream of the merge point 216. In some embodiments, the exhaust lines have one or more valves 218 upstream of the merge point 216. In some embodiments, the exhaust lines have one or more valves 218 upstream of the merge point 216 and no valves downstream of the merge point 216. In some embodiments, the exhaust lines have a valve 219 downstream of the merge point 216. In some embodiments, the exhaust lines have a valve 219 downstream of the merge point 216 and no valves upstream of the merge point 216.

[0068] Fig.14 The embodiment depicted in has two separate conduits 222a, 222b. In some embodiments, two conduits 222a, 222b are connected upstream of the drawing to provide a single gas flow to conduits 222a and 222b. In some embodiments, conduits 222a and 222b are connected to separate gas sources (not shown) and are in fluid communication with these separate gas sources. Conduit 222a is connected to manifold 200 through orifice 230a and valve 220a, and conduit 222b is connected to manifold 200 through orifice 230b and valve 220b.

[0069] Fig.16AAnother embodiment of manifold 200 is shown, in which two conduits 322a, 322b are connected to the manifold by inlet lines of different sizes. In the illustrated embodiment, gas flows into conduit 322a through valve 320a and orifice 330a. The gas flow in conduit 322a is divided into three inlet lines 323a, 323b, 323c, wherein each inlet line 323a, 323b, 323c is connected to inlet openings 311a, 311b, 311c, respectively. Gas flows into conduit 322b through valve 320b and orifice 330b. The gas flow in conduit 322b is divided into three inlet lines 324a, 324b, 324c, wherein each inlet line 324a, 324b, 324c is connected to inlet openings 321a, 321b, 321c, respectively. The size of the inlet lines is different so that the gas flow conductance into the opening or the gas flow in the gas delivery partition is controlled. The conductivity can be changed by changing the size of the inlet line so that the conductivity at different delivery zones can be modified. In some embodiments, the conductivity at different delivery zones is approximately the same (e.g., within 5% of each other). In some embodiments, the conductivity of each of the delivery zones is different. The size of the inlet line can be changed by changing one or more of the length or diameter of the inlet line. Fig. 16B Shown with Fig.16A A portion of a manifold 200 of a similar embodiment wherein conduits 322a, 322b are located within the manifold 200 and a single source line 310a is connected to conduit 322a. In the illustrated embodiment, inlet lines 323a, 323b, 323c are connected to conduit 322a within the manifold 200. The illustrated embodiment includes Fig.16A The left side of the embodiment depicted in FIG. The right side is a mirror image of the left side shown.

[0070] Fig.17 Another embodiment of the manifold 200 is shown, wherein the gas flow conductance into the openings 311a, 311b, 311c, or gas delivery partitions is controlled by orifices 340a, 340b, 340c, openings 341a, 341b, 341c of different sizes, respectively. The size of the openings 341a, 341b, 341c can be changed so that the conductivity at different delivery partitions can be modified. In some embodiments, the conductivity at different delivery partitions is approximately the same (e.g., within a relative 5%). In some embodiments, the conductivity of each of the delivery partitions is different. In some embodiments, the opening 341a of the orifice 340a closest to the source pipeline 310a is smaller than the opening 341c of the orifice 340c farthest from the source pipeline 310a.

[0071] In some embodiments, Fig.14As shown in FIG. 1 , the manifold 200 includes one or more auxiliary openings 260. The auxiliary openings 260 may pass through the entire manifold 200 or may be partial openings. In some embodiments, the auxiliary openings 260 serve as holders for thermal probes that are used to measure the temperature of the manifold, gas, and / or substrate. For example, multiple pyrometers may be inserted to measure the substrate temperature through the manifold.

[0072] In some embodiments, at least one controller 250 is connected to each valve 220 to control the flow of gas through the gas distribution device 100. The controller 250 can be one of any form of general purpose computer processor, microcontroller, microprocessor, etc. that can be used in an industrial environment for controlling various chambers and subprocessors.

[0073] In some embodiments, the at least one controller 250 has a processor 252, a memory 254 coupled to the processor 252, an input / output device 256 coupled to the processor 252, and support circuits 258 for communication between various electronic and mechanical components. The memory 254 may include one or more of a temporary memory (e.g., a random access memory) and a non-temporary memory (e.g., a storage device).

[0074] The processor's memory 254 or computer readable medium may be one or more of readily available memories, such as random access memory (RAM), read-only memory (ROM), floppy disk, hard disk, or any other form of local or remote digital storage. The memory 254 may store instruction sets that may be operated by the processor 252 to control parameters and elements of the system. Support circuits 258 are coupled to the processor 252 to support the processor in a conventional manner. The circuits may include, for example, caches, power supplies, clock circuits, input / output circuitry, subsystems, and the like.

[0075] Generally, the process can be stored in a memory as a software routine, which, when executed by a processor, causes the device to perform the process of the present disclosure. The software routine can also be stored and / or executed by a second processor (not shown), which is located at the remote end of the hardware controlled by the processor. Some or all of the methods of the present disclosure can also be performed in hardware. In this way, the process can be implemented in software and executed using a computer system, implemented in hardware as, for example, an application specific integrated circuit or other type of hardware implementation, or implemented as a combination of software and hardware. The software routine, when executed by a processor, transforms a general-purpose computer into a special-purpose computer (controller) that controls the operation of the chamber so that the process is performed.

[0076] In some embodiments, the controller 250 has one or more configurations to perform individual processes or sub-processes to perform embodiments of the method. The controller 250 can be connected to intermediate elements and configured to operate these intermediate elements to perform the functions of the method. For example, the controller 250 can be connected to one or more of a gas valve, an actuator, a motor, a slit valve, a vacuum controller, etc. and configured to control these elements.

[0077] The controller 250 of some embodiments has one or more configurations selected from the following items: a configuration for controlling one or more valves 220 to open and / or close the valve; a configuration for controlling one or more exhaust valves 218, 219; a configuration for controlling the flow of gas entering the purification inlet 240; or a configuration for reading information provided by one or more thermal sensors.

[0078] Some embodiments of the present disclosure relate to methods of providing gas flows to a process area of ​​a processing chamber. A first gas flow is provided to a first gas delivery channel in a gas distribution device and a second gas flow is provided to a second gas delivery channel in the gas distribution device. The first gas flow and the second gas flow can be sequential or simultaneous.

[0079] The first gas flows to the processing chamber through a plurality of first inlet lines leading to a gas manifold. Each of the first inlet lines has a valve and optionally an orifice. The valve can be opened to allow the first gas to flow into the processing chamber. The size of the orifice can be changed to change the amount of the first gas delivered to the gas manifold through the valve to change the amount of precursor in different partitions.

[0080] The second gas flows to the processing chamber through a plurality of second inlet lines leading to the gas manifold. Each of the second inlet lines has a valve and optionally an orifice. The valve can be opened to allow the second gas to flow into the processing chamber. The size of the orifice can be changed to change the amount of the second gas delivered to the gas manifold through the valve to change the amount of precursor in different partitions.

[0081] The apparatus can be used for plasma processing. For example, a delivery channel, a gas distribution device, or a shower head can be polarized relative to another portion of the processing chamber to ignite a plasma in the chamber. The delivery channel, the gas distribution device, or the shower head can be polarized relative to a portion of the chamber, or a portion of the chamber can be biased relative to the delivery channel, the gas distribution device, or the shower head. For example, the delivery channel, the gas distribution device, or the shower head can be polarized relative to the pedestal, or the pedestal can be polarized relative to the delivery channel, the gas distribution device, or the shower head. The frequency of the plasma can also be adjusted. In one or more embodiments, the plasma is at a frequency of about 13.56 MHz. In some embodiments, the plasma is at a frequency of about 40 MHz, 50 MHz, 60 MHz, 70 MHz, 80 MHz, 90 MHz, 100 MHz, 110 MHz, or 120 MHz.

[0082] In some embodiments, there is an insulating material (not shown) positioned between the back cover and the main portion of the gas distribution device (i.e., the portion including the gas delivery channels). This insulating material provides electrical isolation between the back cover and the main portion of the gas distribution device, so that the back cover can be polarized relative to the main portion. Doing so can allow a plasma to be ignited within the gas distribution device or within the delivery channels. The plasma can then flow through the plurality of holes into the processing region of the processing chamber, which is the region between the gas distribution device and the pedestal. This configuration can be referred to as a remote plasma because the plasma is formed (ignited) outside the processing region.

[0083] The described gas distribution device can be used to form one or more layers during a plasma enhanced atomic layer deposition (PEALD) process. In some processes, the use of plasma provides sufficient energy to promote species to an excited state, in which surface reactions become favorable and easy. The plasma can be introduced into the process continuously or pulsed. In some embodiments, sequential pulses of precursors (or reactive gases) and plasma are used to treat layers. In some embodiments, reagents can be ionized locally (i.e., within the processing area) or remotely (i.e., outside the processing area). Remote ionization can occur upstream of the deposition chamber so that ions or other energetic or luminous species are not in direct contact with the deposited film. In some PEALD processes, plasma is generated outside the processing chamber, for example, by a remote plasma generator system. Plasma can be generated via any suitable plasma generation process or technology known to those skilled in the art. For example, plasma can be generated by one or more of a microwave (MW) frequency generator or a radio frequency (RF) generator. The frequency of the plasma can be adjusted depending on the specific reactive species used. Suitable frequencies include, but are not limited to, 2 MHz, 13.56 MHz, 40 MHz, 60 MHz, and 100 MHz. Although a plasma may be used during the deposition processes disclosed herein, it should be noted that a plasma may not be required.

[0084] According to one or more embodiments, the gas distribution device can be used to subject the substrate to processing before and / or after forming the layer. This processing can be performed in the same chamber or in one or more separate processing chambers. In some embodiments, the substrate is moved from a first chamber to a separate second chamber for further processing. The substrate can be moved directly from the first chamber to the separate processing chamber, or the substrate can be moved from the first chamber to one or more transfer chambers and then to the desired separate processing chamber. Thus, the processing device can include multiple chambers connected to a transfer station. Such devices can be referred to as "cluster tools" or "cluster systems" or the like.

[0085] In general, a cluster tool includes a modular system of multiple chambers that perform various functions, including substrate centering and orientation, degassing, annealing, deposition, and / or etching. According to one or more embodiments, the cluster tool includes at least a first chamber and a central transfer chamber. The central transfer chamber can accommodate a robot that can transport substrates to and from the processing chambers and the load lock chamber. The transfer chamber is generally maintained under vacuum conditions and provides an intermediate stage for transporting substrates from one chamber to another and / or to and from a load lock chamber located at the front end of the cluster tool. Two well-known cluster tools that may be suitable for the present disclosure are and Both are available from Applied Materials, Inc., Santa Clara, California. However, the exact chamber arrangement and combination may be varied for the purpose of performing the specific steps of the processes described herein. Other processing chambers that may be used include, but are not limited to, cyclic layer deposition (CLD), atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), etching, pre-cleaning, chemical cleaning, thermal treatment such as RTP, plasma nitridation, degassing, orientation, hydroxylation, and other substrate processes. By implementing the processes in chambers on a cluster tool, contamination of the substrate surface with atmospheric impurities can be avoided without oxidation prior to deposition of subsequent films.

[0086] According to one or more embodiments, the substrate is continuously under vacuum or "load lock" conditions and is not exposed to ambient air when moving from one chamber to the next. The transfer chamber is therefore under vacuum and is "evacuated" at vacuum pressure. An inert gas may be present in the processing chamber or the transfer chamber. In some embodiments, the inert gas is used as a purge gas to remove some or all of the reactants after the silicon layer is formed on the surface of the substrate. According to one or more embodiments, a purge gas is injected at the outlet of the deposition chamber to prevent the reactants from moving from the deposition chamber to the transfer chamber and / or additional processing chambers. Thus, the inert gas flow forms a gas curtain at the outlet of the chamber.

[0087] Substrates may be processed in a single substrate deposition chamber using, for example, a gas distribution device as described. In such chambers, a single substrate is loaded, processed, and unloaded before processing another substrate. Substrates may also be processed in a continuous manner (similar to a conveyor system) where multiple substrates are each loaded into a first portion of the chamber, moved through the chamber, and unloaded from a second portion of the chamber. The shape of the chamber and the associated conveyor system may form a straight path or a curved path. Additionally, the processing chamber may be a carousel where multiple substrates move around a central axis and are exposed to processes of deposition, etching, annealing, cleaning, etc., throughout the carousel path.

[0088] During processing, the substrate may be heated or cooled. Such heating or cooling steps may be accomplished by any suitable means, including but not limited to the following steps: changing the temperature of the substrate support and flowing the heated or cooled gas to the substrate surface. In some embodiments, the substrate support includes a heater / cooler that can be controlled to conductively change the substrate temperature. In one or more embodiments, the gas (either a reactive gas or an inert gas) employed is heated or cooled to locally change the substrate temperature. In some embodiments, the heater / cooler is positioned in a chamber adjacent to the substrate surface to convectively change the substrate temperature.

[0089] The substrate may also be fixed or rotated during processing. A rotating substrate may be rotated continuously or in discrete steps. For example, the substrate may be rotated throughout the process, or may be rotated a small amount between steps of exposure to different reactive or purge gases. Rotating the substrate (continuously or in steps) during processing may help produce a more uniform deposition or etching by minimizing the effects of local variability, such as gas flow geometry.

[0090] Although the disclosure herein has been described with reference to detailed embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the disclosure. Those skilled in the art will appreciate that various modifications and variations may be made to the methods and devices of the disclosure without departing from the spirit and scope of the disclosure. Therefore, the disclosure is intended to include modifications and variations that fall within the scope of the appended claims and their equivalents.

Claims

1. A gas distribution device, comprising: a spiral gas delivery channel having a length and having a plurality of holes spaced along the length, the spiral gas delivery channel having at least one dividing wall, the at least one dividing wall dividing the gas delivery channel into a plurality of gas delivery partitions, each gas delivery partition having a partition length, a partition inlet, and a partition outlet; as well as a gas distribution manifold having a plurality of inlet passages for providing fluid communication between a gas source and the zone inlets and a plurality of outlet passages for providing fluid communication between the zone outlets and an exhaust, wherein The plurality of inlet passages have different sizes, or the plurality of inlet passages each have an orifice of different sizes, thereby controlling the gas flow into the zone inlet of each gas delivery zone so that the conductance at different delivery zones is modified, The multiple gas delivery partitions include an inner partition, an outer partition, and an intermediate partition located between the inner partition and the outer partition, wherein the inner partition is located at the center of the gas distribution device and the outer partition is located at the outer periphery of the gas distribution device, wherein the conductivity at different delivery partitions is modified so that the amount of precursor flowing in the inner partition is less than the amount of precursor flowing in the intermediate partition, and the amount of precursor flowing in the intermediate partition is less than the amount of precursor flowing in the outer partition.

2. The gas distribution arrangement of claim 1, wherein the gas delivery channel is recessed into the backside surface of the plate and the plurality of holes extend through the plate to the frontside surface.

3. The gas distribution device according to claim 2, wherein the delivery channel forms a spiral shape, and each partition has an inner end and an outer end, and one of the partition inlet and the partition outlet is positioned at the outer end of the partition, and the other of the partition inlet and the partition outlet is positioned at the inner end of the partition.

4. The gas distribution device of claim 2, wherein two delivery channels are recessed into the rear side of the plate to form a first delivery channel and a second delivery channel.

5. The gas distribution device according to claim 4, wherein each of the delivery channels forms a spiral shape, and each partition has an inner end and an outer end, and one of the partition inlet and the partition outlet is positioned at the outer end of the partition, and the other of the partition inlet and the partition outlet is positioned at the inner end of the partition.

6. The gas distribution device according to claim 5, wherein the two delivery channels are wound around each other along a spiral shape.

7. The gas distribution device of claim 6, wherein the zone inlet of each of the zones is positioned at the inner end or the outer end of the zone, and the zone outlet is positioned at the other of the inner end or the outer end of the zone.

8. The gas distribution device of claim 6, wherein each of the zone inlets of the zones of the first delivery channel is positioned at the inner end of the zone, and each of the zone inlets of the zones of the second delivery channel is positioned at the outer end of the zone.

9. The gas distribution device according to claim 6, further comprising: A rear cover is located on the rear side of the plate, the rear cover covering the recessed channel.

10. The gas distribution device according to claim 9, wherein the gas distribution manifold is located on the rear cover.

11. The gas distribution device of claim 10, wherein the partitioned outlet of the first delivery channel is in fluid communication with an exhaust device through a plurality of outlet passages in the manifold that merge into a first exhaust port, and the partitioned outlet of the second delivery channel is in fluid communication with an exhaust device through a plurality of outlet passages in the manifold that merge into a second exhaust port.

12. The gas distribution arrangement of claim 10, wherein each inlet passage forms a fluid connection between a manifold inlet opening and a partition of one of the delivery channels.

13. The gas distribution arrangement of claim 12, wherein each manifold inlet opening is in fluid communication with a valve and optionally an orifice.

14. The gas distribution apparatus of claim 13, wherein each of the valves is in communication with a controller configured to simultaneously open all of the valves in fluid communication with one of the delivery passages.

15. A gas distribution device comprising: a plate having a front side surface and a rear side surface; a first gas delivery channel, the first gas delivery channel being recessed into the rear surface of the plate, the first gas delivery channel having a spiral shape of a certain length, the gas delivery channel being divided into a plurality of first partitions along the length by partition walls, each first partition having a partition inlet, a partition outlet, and a partition length; a second gas delivery channel, the second gas delivery channel being recessed into the rear side surface of the plate, the second gas delivery channel having a spiral shape of a certain length intertwined with the first gas delivery channel, the second gas delivery channel being divided into a plurality of second partitions along the length by partition walls, each second partition having a partition inlet, a partition outlet, and a partition length; a plurality of first holes spaced apart along the length of the gas delivery channel, each of the plurality of first holes extending from the front side surface of the plate to the first gas delivery channel; a plurality of second holes spaced apart along the length of the second gas delivery channel, each of the plurality of second holes extending from the front side surface of the plate to the second gas delivery channel; and a gas distribution manifold having a plurality of inlet passages for providing fluid communication between a gas source and the zone inlets and a plurality of outlet passages for providing fluid communication between the zone outlets and an exhaust, wherein the plurality of inlet passages in fluid communication with the first gas delivery channel have different sizes, or the plurality of inlet passages in fluid communication with the first gas delivery channel each have an orifice of a different size, thereby controlling gas flow into the zone inlet of each first zone such that conductance at different first zones is modified, The plurality of inlet passages in fluid communication with the second gas delivery channel have different sizes, or the plurality of inlet passages in fluid communication with the second gas delivery channel each have an orifice of a different size, thereby controlling gas flow into the zone inlet of each second zone such that conductance at different second zones is modified, and The plurality of first partitions and the plurality of second partitions each include an inner partition, an outer partition, and an intermediate partition located between the inner partition and the outer partition, wherein the inner partition is located at the center of the gas distribution device and the outer partition is located at the outer periphery of the gas distribution device, wherein the conductivity at different first partitions and different second partitions is modified so that the amount of the precursor flowing in the inner partition is less than the amount of the precursor flowing in the intermediate partition, and the amount of the precursor flowing in the intermediate partition is less than the amount of the precursor flowing in the outer partition.

16. The gas distribution device according to claim 15, further comprising: A rear cover is positioned adjacent the rear surface of the plate to enclose the gas delivery passage, the rear cover having a plurality of openings to allow fluid communication through the rear cover with the zoned inlets and the zoned outlets.

17. A method of providing a gas flow to a processing region of a processing chamber, the method comprising the steps of: A gas flow of a first gas is provided to a first gas delivery channel in a gas distribution device and a gas flow of a second gas is provided to a second gas delivery channel in the gas distribution device, the first gas delivery channel and the second gas delivery channel are formed in a plate, the first gas delivery channel has a spiral shape of a certain length and a plurality of holes spaced along the length, the first gas delivery channel has at least one partition wall that divides the first gas delivery channel into a plurality of first partitions, each first partition having a partition length, an inlet, and an outlet, the second gas delivery channel has a spiral shape of a certain length and a plurality of holes spaced along the length, the second gas delivery channel has at least one partition wall that divides the second gas delivery channel into a plurality of second partitions, each second partition having a partition length, an inlet, and an outlet, wherein providing the first gas to the first gas delivery channel and the second gas to the second gas delivery channel through a gas distribution manifold, the gas distribution manifold having a plurality of inlet passages for providing fluid communication between a gas source and the inlet of each of the first and second zones and a plurality of outlet passages for providing fluid communication between the outlet of each of the first and second zones and an exhaust, the plurality of inlet passages in fluid communication with the first gas delivery channel have different sizes, or the plurality of inlet passages in fluid communication with the first gas delivery channel each have an orifice of a different size, thereby controlling the gas flow into the inlet of each first subarea such that the conductance at different first subareas is modified, The plurality of inlet passages in fluid communication with the second gas delivery channel have different sizes, or the plurality of inlet passages in fluid communication with the second gas delivery channel each have an orifice of a different size, thereby controlling the gas flow into the inlet of each second partition so that the conductance at different second partitions is modified, and The plurality of first partitions and the plurality of second partitions each include an inner partition, an outer partition, and an intermediate partition located between the inner partition and the outer partition, wherein the inner partition is located at the center of the gas distribution device and the outer partition is located at the outer periphery of the gas distribution device, wherein the conductivity at different first partitions and different second partitions is modified so that the amount of the precursor flowing in the inner partition is less than the amount of the precursor flowing in the intermediate partition, and the amount of the precursor flowing in the intermediate partition is less than the amount of the precursor flowing in the outer partition.

18. The method according to claim 17, further comprising the steps of: Gas is exhausted from the plurality of first zones through the zone outlets and gas is exhausted from the plurality of second zones through the zone outlets.

19. The method of claim 17, wherein the inlet of each of the first partitions is in fluid communication with a first valve and optionally a first orifice, and the step of providing a flow of the first gas comprises opening the first valve to allow the first gas to flow into the first partition through the first valve, and the inlet of each of the second partitions is in fluid communication with a second valve and optionally a second orifice, and the step of providing a flow of the second gas comprises opening the second valve to allow the second gas to flow into the second partition through the second valve.

20. The method of claim 19, further comprising the step of providing one or more orifices to vary the flow of one or more of the first gas and the second gas to one or more of the partitions.

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