Method for manufacturing electronic device laminate and electronic device laminate

Abstract

The present application can provide a method for manufacturing an electronic device laminate and an electronic device laminate, in which, when an electronic device such as an organic EL device is sealed with a gas barrier film, the thickness of an adhesive layer can be reduced to prevent deterioration of the element and a highly flexible electronic device laminate can be manufactured. The method for manufacturing an electronic device laminate includes: a step of preparing a gas barrier film having a sealing layer having a heat fusion layer, an inorganic layer, and an organic layer in this order, and a substrate laminated on the organic layer side of the sealing layer in a manner capable of being peeled from the sealing layer; a heat pressure bonding step of bonding the gas barrier film to an element formation surface of an electronic device having a concave-convex surface by heating and pressing the gas barrier film with the heat fusion layer side facing the element formation surface side; and a peeling step of peeling the substrate from the sealing layer, the thickness of the inorganic layer being 100 nm or less, and the glass transition temperature of the heat fusion layer being 20°C to 180°C.

Description

TECHNICAL FIELD

[0001] The present application relates to a method for manufacturing an electronic device laminate and an electronic device laminate. BACKGROUND

[0002] Organic EL (Electro Luminescence) materials are very weak against moisture. Therefore, it is generally known that in an organic EL device using an organic EL material, an organic EL element is sealed with a passivation film having a gas barrier property. And, as a material for forming the passivation film, inorganic materials such as silicon nitride, silicon oxide, and silicon oxynitride, which exhibit a gas barrier property, are exemplified.

[0003] However, since organic EL materials are not resistant to heat, the passivation film must be formed with low energy so as not to cause damage to the organic EL material at the time of forming the passivation film. Therefore, in order to obtain a sufficient gas barrier property with the passivation film, it is necessary to make the passivation film thick or to form a multilayer passivation film. However, if the passivation film is thickened or a multilayer passivation film is formed, it results in poor flexibility.

[0004] In response to this, a sealing method using an adhesive having a high gas barrier property has been proposed. The method using an adhesive having a high gas barrier property is more flexible than sealing with a passivation film.

[0005] However, in a structure in which the adhesive layer itself has a gas barrier property, the gas barrier property is lower than a structure having an inorganic layer as a gas barrier layer, and thus the organic EL element cannot be sufficiently protected in an organic EL device for a display or the like requiring narrow frame, resulting in degradation of the organic EL element.

[0006] And, it is possible that the organic EL element is degraded due to the influence of moisture and residual solvent or the like contained in the adhesive.

[0007] And, as a structure of a highly flexible organic EL device, a sealing method using a gas barrier film attached via an adhesive (adhesive) has been proposed. In the method using a gas barrier film, an inorganic layer such as silicon nitride, silicon oxide, and silicon oxynitride, which exhibit a gas barrier property, is formed on a substrate different from the organic EL element, and thus the inorganic layer can be formed with high energy, and thus a thin inorganic layer having a high gas barrier property can be formed. Therefore, regarding an organic EL device produced by the method of sealing an organic EL element by using a gas barrier film, a more flexible organic EL device than an organic EL device produced by the method of sealing an organic EL element by using a passivation film can be produced. Therefore, by being combined with a structure using a resin film as an element substrate, an organic EL display having flexibility and an organic EL device formed into a three-dimensional curved surface can be produced.

[0008] And, in the method using a gas barrier film, the productivity is also superior to sealing with a passivation film.

[0009] For example, in Patent Literature 1, an organic EL laminate is described, which is obtained by bonding, with an adhesive, an organic EL device having a light-emitting element using an organic EL material and a passivation film covering the light-emitting element, and a transparent sealing substrate, in which the organic EL device is a top emission type that emits light toward the sealing substrate side, the sealing substrate is a gas barrier film in which a surface layer is an inorganic film having one or more combinations of an inorganic film and an organic film that is a base of the inorganic film on a support, the organic EL device is bonded to the gas barrier film with the adhesive so that the passivation film and the inorganic film of the surface layer are opposed to each other, the adhesive is filled in the entire region between the passivation film and the inorganic film of the surface layer, and further, a gap between the passivation film and the inorganic film of the surface layer in an end portion of the organic EL device is narrower than a gap between the passivation film and the inorganic film of the surface layer at a position of the light-emitting element.

[0010] Also, in Patent Literature 2, a gas barrier film is described, which has a substrate, a gas barrier layer provided on one face of the substrate, having one or more combinations of an inorganic layer and an organic layer that is a forming face of the inorganic layer, and a peeling organic layer provided between the substrate and the gas barrier layer, and adhered to the organic layer, and used for peeling from the substrate. In Patent Literature 2, it is described that the gas barrier layer is transferred from the gas barrier film to an organic EL element via an adhesive layer and sealed.

[0011] Prior Art Documents

[0012] Patent Literature

[0013] Patent Literature 1: Japanese Patent Application Laid-Open (JP-A) No. 2014-186850

[0014] Patent Literature 2: Japanese Patent Application Laid-Open (JP-A) No. 2017-043062 SUMMARY

[0015] Technical Problem to be Solved by the Invention

[0016] However, in the sealing method in which the gas barrier film is attached via the adhesive, moisture intrusion from the end face of the adhesive layer becomes a problem.

[0017] In view of this, in Patent Literature 1, it is described that moisture intrusion from the end face of the adhesive layer is suppressed by making the thickness of the adhesive layer (gap between the passivation film and the inorganic film) in the end portion narrower than the thickness (gap between the passivation film and the inorganic film) at the position of the light-emitting element (organic EL element).

[0018] However, in the attaching method described in Patent Literature 1, even if the thickness of the adhesive layer is thin, it can only be set to about 1 μm, and thus, in order to suppress deterioration of the organic EL element due to moisture intrusion from the end surface of the adhesive layer, it is necessary to provide a passivation film having high gas barrier properties. Therefore, compared to a structure having only the passivation film, it is possible to reduce the thickness of the passivation film, but a certain degree of thickness is required and it is difficult to obtain higher flexibility.

[0019] Further, if the adhesive layer is thick, it is possible that the organic EL element deteriorates due to the influence of moisture and residual solvent and the like contained in the adhesive.

[0020] Further, even in the case of using a transfer type gas barrier film as described in Patent Literature 2, the same problems as in Patent Literature 1 arise.

[0021] As described above, in order to suppress moisture intrusion from the end surface of the adhesive layer, it is necessary to reduce the thickness of the adhesive layer on the end surface. Further, in order to suppress the influence of moisture and residual solvent and the like contained in the adhesive, it is also necessary to further reduce the thickness of the adhesive layer.

[0022] However, in an organic EL device, a plurality of organic EL elements are arranged on an element substrate and formed, and the surface of the organic EL device has a concavo-convex shape. When the organic EL device is sealed with a gas barrier film, the plurality of organic EL elements are covered with the gas barrier film and sealed. Therefore, for the surface having the concavo-convex shape, it is necessary to control the gap (thickness of the adhesive layer) between the organic EL device and the gas barrier film to be thinner in order to attach the gas barrier film, but it is difficult to control the thickness of the adhesive layer at the time of attachment to be thin. In Patent Literature 1 and Patent Literature 2, no attaching method is described in which the thickness of the adhesive layer can be reduced when the gas barrier film is attached to such a surface having a concavo-convex shape.

[0023] The present application has an object to solve such a problem, and to provide a method for manufacturing an electronic device laminate and an electronic device laminate, in which, when an electronic device such as an organic EL device is sealed with a gas barrier film, the thickness of an adhesive layer can be reduced to prevent deterioration of the element and a highly flexible electronic device laminate can be produced.

[0024] Means for solving the technical problem

[0025] The present application solves the problem by the following structure.

[0026] [1] A method for manufacturing an electronic device laminate, comprising:

[0027] a step of preparing a gas barrier film having a sealing layer having a heat fusion layer, an inorganic layer, and an organic layer in this order, and a substrate laminated on the organic layer side of the sealing layer in a manner capable of being peeled from the sealing layer;

[0028] a heat pressure bonding step of bonding the gas barrier film to the element formation surface of the electronic device having the unevenness by heating and pressing the gas barrier film with the hot melt layer side facing the element formation surface side; and

[0029] a peeling step of peeling the substrate from the sealing layer,

[0030] the inorganic layer has a thickness of 100 nm or less,

[0031] the hot melt layer has a glass transition temperature of 20°C to 180°C.

[0032] [2] The method for manufacturing an electronic device laminate according to [1], wherein

[0033] In the heat pressure bonding step, the heating temperature and the pressure applied are adjusted so that the distance between the inorganic layer in the end portion and the electronic device after the heat pressure bonding is less than 100 nm.

[0034] [3] The method for manufacturing an electronic device laminate according to [1] or [2], wherein

[0035] the electronic device is an organic electroluminescent device.

[0036] [4] The method for manufacturing an electronic device laminate according to any one of [1] to [3], wherein

[0037] In the heat pressure bonding step, the heating and the pressing of the gas barrier film are performed using a roll.

[0038] [5] The method for manufacturing an electronic device laminate according to any one of [1] to [4], wherein

[0039] In the heat pressure bonding step, the heating is performed from the substrate side.

[0040] [6] The method for manufacturing an electronic device laminate according to [5], wherein

[0041] In the heat pressure bonding step, the heating is performed from the electronic device side.

[0042] [7] The method for manufacturing an electronic device laminate according to [6], wherein

[0043] the heating temperature on the substrate side is higher than the heating temperature on the electronic device side.

[0044] [8] The method for manufacturing an electronic device laminate according to any one of [1] to [7], wherein

[0045] the substrate is a triacetyl cellulose film.

[0046] [9] The method for manufacturing an electronic device laminate according to any one of [1] to [8], wherein

[0047] The thickness of the substrate is 0.1μm to 100μm.

[0048]

[10] An electronic device laminate, comprising:

[0049] Electronic devices, whose component forming surfaces have irregularities; and

[0050] The transfer layer comprises, in sequence, a heat-bonding layer, an inorganic layer, and an organic layer stacked on the component forming surface.

[0051] The thickness of the inorganic layer is less than 100 nm.

[0052] The glass transition temperature of the heat-fused layer is 20℃~180℃.

[0053] The distance between the inorganic layer at the end and the electronic device is less than 100 nm.

[0054]

[11] According to the electronic device stack described in

[10] , wherein,

[0055] The electronic device is an organic electroluminescent device.

[0056] Invention Effects

[0057] According to the present invention, a method for manufacturing an electronic device laminate and an electronic device laminate can be provided. In the method for manufacturing the electronic device laminate, when sealing electronic devices such as organic EL devices with a barrier film, the thickness of the adhesive layer can be reduced to prevent the deterioration of the components and a highly flexible electronic device laminate can be manufactured. Attached Figure Description

[0058] Figure 1 This is a cross-sectional view schematically illustrating an example of a transfer-type barrier film used in the manufacturing method of the electronic device laminate of the present invention.

[0059] Figure 2 This is a diagram illustrating an example of a method for manufacturing an electronic device laminate according to the present invention.

[0060] Figure 3 This is a diagram illustrating an example of a method for manufacturing an electronic device laminate according to the present invention.

[0061] Figure 4 This is a diagram illustrating an example of a method for manufacturing an electronic device laminate according to the present invention.

[0062] Figure 5 This is a schematic cross-sectional view illustrating an example of an electronic device laminate manufactured by the method for manufacturing the electronic device laminate of the present invention. Detailed Implementation

[0063] Hereinafter, embodiments of the method for manufacturing an electronic device laminate and the electronic device laminate according to the present application will be described with reference to the accompanying drawings.

[0064] [Method for manufacturing electronic device laminate]

[0065] The method for manufacturing an electronic device laminate according to the present application is a method for manufacturing an electronic device laminate, which includes:

[0066] a step of preparing a gas barrier film having a sealing layer having a heat fusion layer, an inorganic layer, and an organic layer in this order, and a substrate laminated on the organic layer side of the sealing layer in a manner capable of being peeled from the sealing layer;

[0067] a heat pressure bonding step of heat- and pressure-bonding the gas barrier film to a component formation surface of an electronic device having a concave-convex shape with the heat fusion layer side facing the component formation surface side; and

[0068] a peeling step of peeling the substrate from the sealing layer,

[0069] the thickness of the inorganic layer is 100 nm or less,

[0070] the glass transition temperature of the heat fusion layer is 20°C to 180°C.

[0071] Hereinafter, reference will be made to Figures 1-5 to describe an example of the method for manufacturing an electronic device laminate according to the present application.

[0072] The method for manufacturing an electronic device laminate according to the present application (hereinafter, also referred to as the manufacturing method according to the present application) includes: a step of preparing a gas barrier film having a sealing layer having a heat fusion layer, an inorganic layer, and an organic layer in this order, and a substrate laminated on the organic layer side of the sealing layer in a manner capable of being peeled from the sealing layer; a heat pressure bonding step of heat- and pressure-bonding the gas barrier film to a component formation surface of an electronic device having a concave-convex shape with the heat fusion layer side facing the component formation surface side; and a peeling step of peeling the substrate from the sealing layer. Figure 1 Figures 2-4 Figure 4 Figure 5

[0073] <Gas barrier film>

[0074] Figure 1 A cross-sectional view schematically showing a gas barrier film used in the method for manufacturing an electronic device laminate according to the present application is shown in FIG. 1.

[0075] Figure 1 ​​​​The illustrated gas barrier film 40 sequentially comprises a heat-fused layer 30, an inorganic layer 16, an organic layer 14, and a substrate 32. The heat-fused layer 30, the inorganic layer 16, and the organic layer 14 are sealing layers 12 that can be peeled off from the substrate 32. That is, the gas barrier film 40 is formed to be peelable at the interface between the substrate 32 and the organic layer 14. The gas barrier film 40 is a transfer-type gas barrier film capable of transferring the sealing layer 12 onto an electronic device.

[0076] In the gas barrier film 40, the inorganic layer 16 is the layer that mainly exhibits gas barrier properties, and the organic layer 14 is the base layer of the inorganic layer 16. Furthermore, the heat-bonding layer 30 is a layer that flows and exhibits adhesive properties when the gas barrier film 40 is bonded to the electronic device by heating.

[0077] In this invention, the thickness of the inorganic layer 16 is less than 100 nm.

[0078] Furthermore, the glass transition temperature Tg of the heat-fused layer 30 is 20℃~180℃.

[0079] The layers of the gas barrier membrane 40 will be described in detail later.

[0080] <Hot pressing process>

[0081] The hot-pressing process is a process of pressing the gas barrier film 40 as described above onto the component forming surface of the electronic device 50.

[0082] In the hot pressing process, firstly, as Figure 2 As shown, an electronic device (organic EL device) 50, on which a plurality of organic EL (electroluminescent) elements 54 are formed on an element substrate 52, is placed on a worktable 100. Furthermore, the heat-bonding layer 30 of the gas barrier film 40 is positioned opposite the surface of the electronic device 50 on the side of the organic EL elements 54 (hereinafter also referred to as the element forming surface).

[0083] Next, as Figure 3 As shown, the gas barrier film 40 is pressed onto the electronic device 50 using roller 102. At this time, roller 102 has a heating mechanism, and the gas barrier film 40 is heated and pressurized by roller 102.

[0084] Furthermore, as a preferred embodiment, the worktable on which the electronic device 50 is placed also has a heating mechanism, and the side of the electronic device 50 is also heated.

[0085] By heating the gas barrier film 40 under pressure, the heat-fused layer 30 flows and exhibits adhesiveness. Thus, the gas barrier film 40 is bonded to the component forming surface of the electronic device 50. Figure 4 ).

[0086] In the case where the conventional adhesive layer is used as a material for bonding the gas barrier film to the electronic device, even if pressure or heat is applied at the time of lamination, the thickness of the adhesive layer cannot be greatly changed, and thus it is difficult to make the thickness of the adhesive layer thinner.

[0087] On the other hand, as a method for making the thickness of the adhesive layer thinner, a method in which the adhesive in a liquid state is applied to the element formation surface of the electronic device and then the gas barrier film is laminated is also considered, but if lamination is performed in a state where the inorganic layer of the gas barrier film is exposed, the inorganic layer can be broken and the gas barrier property can be reduced. In order to prevent cracking of the inorganic layer, a protective layer made of resin is provided, and thus cracking of the inorganic layer can be prevented, but since the protective layer is thick, it is difficult to follow the unevenness of the element formation surface of the electronic device, and the organic EL element can be deteriorated due to the influence of moisture and residual solvent and the like contained in the protective layer.

[0088] In contrast, in the manufacturing method of the present application, a hot melt layer 30 having a glass transition temperature of 20°C to 180°C and being dissolved by heat is used as a material for bonding the gas barrier film 40 to the electronic device 50. Thus, when the gas barrier film 40 is laminated on the element formation surface of the electronic device 50, the hot melt layer flows and flows into the recesses and the like of the element formation surface, and thus the thickness of the hot melt layer 30 can be made very thin, or further, the hot melt layer 30 can be provided so as to be distributed between the inorganic layer 16 and the electronic device 50, and thus the distance between the organic EL element 54 of the electronic device 50 and the inorganic layer 16 of the gas barrier film 40 and the distance between the electronic device 50 (element substrate 52) and the inorganic layer 16 of the gas barrier film 40 in the end portion can be reduced.

[0089] Thus, the manufacturing method of the present application can make the distance between the inorganic layer 16 on the end surface after hot pressing and the electronic device 50 (the thickness of the hot melt layer 30) very small, and thus the electronic device laminate 10 produced by the manufacturing method of the present application can prevent moisture from invading from the end surface of the hot melt layer 30 and can prevent deterioration of the organic EL element 54.

[0090] Further, the hot melt layer 30 is in a solid state before heating, and thus the inorganic layer 16 of the gas barrier film 40 can be protected, and cracking of the inorganic layer 16 at the time of conveyance, lamination, and the like can be prevented.

[0091] Further, the hot melt layer 30 is in a solid state of hot melting, and thus it can be provided so as to contain little or no residual solvent and moisture. Thus, deterioration of the organic EL element 54 due to residual solvent and moisture can be prevented.

[0092] Also, when the gas barrier film 40 is attached to the element formation surface of the electronic device 50, the heat fusion layer flows and flows into the recess of the element formation surface, so that gas (air) present between the gas barrier film 40 and the electronic device 50 at the time of attachment can be effectively removed. Therefore, it is possible to prevent gas (air) from remaining in the recess of the element formation surface of the manufactured electronic device laminate 10 or the like.

[0093] Also, in the present application, the inorganic layer 16 of the gas barrier film 40 has a thickness of 100 nm or less and is flexible, so that even in the case where the gas barrier film 40 is heat-pressed to the element formation surface of the electronic device 50 having unevenness in the heat-pressing step, the inorganic layer 16 does not break as shown in Figure 4 but can be bent according to the unevenness of the element formation surface, so that the distance between the inorganic layer 16 and the electronic device 50 at the end portion can be reduced.

[0094] Also, in the present application, the transfer type gas barrier film 40 in which the sealing layer 12 and the substrate 32 can be peeled off is used as the gas barrier film 40. Therefore, when the gas barrier film 40 is heat-pressed to the element formation surface of the electronic device 50 in the heat-pressing step, the substrate 32 can be partially peeled off from the sealing layer 12, and the sealing layer 12 including the inorganic layer 16 easily follows the unevenness of the element formation surface. Thus, the distance between the inorganic layer 16 and the electronic device 50 after heat-pressing can be further reduced.

[0095] Also, regarding the heat fusion layer 30, only the portion subjected to heating exhibits fluidity and adhesion can be obtained, so that it can be attached to any portion. Therefore, for example, in the case where it is difficult to attach the sealing layer 12 to the entire surface because the electronic device 50 has a three-dimensional shape, it is possible to attach only the end portion and seal the element formation surface of the electronic device 50 with the sealing layer 12, or to additionally transfer to a portion where further improvement of barrier properties is required and seal according to the shape, physical properties, or the like of the element.

[0096] In the heat-pressing step, it is preferable to adjust the heating temperature and the pressure of the pressurization so that the distance between the inorganic layer 16 and the electronic device 50 (element formation surface) at the end portion after heat-pressing is 100 nm or less.

[0097] By setting the distance between the inorganic layer 16 and the electronic device 50 (element formation surface) at the end portion after heat-pressing to 100 nm or less, it is possible to preferably prevent moisture from invading from the end portion of the heat fusion layer 30.

[0098] Regarding the heating temperature and the pressure of the pressurization, it is possible to appropriately set them according to the material, thickness of the heat fusion layer 30, thickness, hardness of the substrate 32, state of the unevenness of the electronic device 50, and the thickness of the heat fusion layer required, or the like.

[0099] In the heat pressure bonding process, the heating temperature of the gas barrier film 40 is preferably equal to or higher than the glass transition temperature Tg of the heat-fusible layer 30, more preferably Tg + 50°C to Tg + 5°C, and further preferably Tg + 30°C to Tg + 20°C. By setting the heating temperature of the gas barrier film 40 within the above range, the heat-fusible layer 30 reliably flows at the time of pressure bonding.

[0100] Also, as described above, in the heat pressure bonding process, the electronic device 50 can be heated. In this case, if the heating temperature on the electronic device 50 side is excessively high, the organic EL element 54 can be damaged. Also, in the case where a resin film is used as the element substrate 52, the element substrate 52 can be deformed by heat shrinkage or the like, and can not be uniformly bonded to the gas barrier film 40. Therefore, in the case where the electronic device 50 is heated, the heating temperature on the electronic device 50 side is preferably lower than the heating temperature on the gas barrier film 40 side. Specifically, it is preferably Tg + 10°C to Tg + 5°C, and more preferably Tg + 5°C to Tg °C.

[0101] Also, in the heat pressure bonding process, the pressure applied to the gas barrier film 40 and the electronic device 50 is preferably 0.001 MPa to 5 MPa, more preferably 0.01 MPa to 1 MPa, and further preferably 0.1 MPa to 0.5 MPa.

[0102] By setting the pressure applied to the gas barrier film 40 and the electronic device 50 to 0.01 MPa or higher, the heat-fusible layer 30 that flows by heating is allowed to move, and the distance between the inorganic layer 16 of the gas barrier film 40 and the element formation surface of the electronic device 50 is reduced, thereby reducing the thickness of the heat-fusible layer 30. On the other hand, if the pressure is excessively high, the inorganic layer 16 can be broken, or the organic EL element 54 can be damaged. Therefore, the pressure is preferably set to 5 MPa or lower.

[0103] Also, in the heat pressure bonding process, the pressure applied to the gas barrier film 40 and the electronic device 50 is preferably 0.001 MPa to 5 MPa, more preferably 0.01 MPa to 1 MPa, and further preferably 0.1 MPa to 0.5 MPa. Figure 3 In the example shown in FIG. 6, a structure in which a roller is used as a device for pressure bonding the gas barrier film 40 to the electronic device 50 in the heat pressure bonding process is described, but the present application is not limited to this. A known pressure device such as a piston-based pressure device or an airbag-type pressure device can be used.

[0104] Also, in the case where pressure is applied with a roller, the surface of the roller is preferably made of a rubber material having flexibility. By using a roller whose surface is made of a rubber material, the inorganic layer 16 of the gas barrier film 40 can be prevented from being damaged by the unevenness of the element formation surface of the electronic device 50, and the gas barrier film 40 and the electronic device 50 can be uniformly bonded.

[0105] Also, as a member that supports the back surface side of the electronic device 50, a member that is smooth and has high rigidity can be used, as described above. Figure 2As shown, the worktable can be a flat plate-shaped worktable on which the placement surface is flat, or a roller can be used. In the case where a worktable is used, it can not be possible to uniformly attach the gas barrier film 40 to the electronic device 50 due to air remaining between the electronic device 50 and the worktable. In this regard, it is preferable to use a roller.

[0106] Furthermore, the heating mechanism possessed by the roller and / or the worktable is not particularly limited, and a publicly known heating mechanism can be used.

[0107] Furthermore, in Figure 3 In the example shown, the structure is such that heating and pressurization are performed simultaneously by the roller, but this is not limiting, and the pressurization can be performed after the gas barrier film is heated.

[0108] Furthermore, with regard to the heat pressurization process, it is preferable to perform it under reduced pressure to below atmospheric pressure. When the heat pressurization process is performed under reduced pressure to attach the gas barrier film 40 to the electronic device 50, it is possible to suppress air from remaining between the gas barrier film 40 and the electronic device 50.

[0109] <Peeling Process>

[0110] As Figure 5 shown, with regard to the peeling process, the substrate 32 of the gas barrier film 40 is peeled from the sealing layer 12 after the heat pressurization process. It is possible to reduce the thickness of the entire electronic device laminate 10 produced by peeling the substrate 32 and improve flexibility.

[0111] With regard to the manufacturing method of the present application, by implementing the above processes, it is possible to produce the electronic device laminate 10 as Figure 5 shown.

[0112] [Electronic Device Laminate]

[0113] The electronic device laminate of the present application produced by the manufacturing method of the present application has:

[0114] an electronic device whose element formation surface has unevenness; and

[0115] a transfer layer that has, in order, a heat fusion layer, an inorganic layer, and an organic layer laminated on the element formation surface,

[0116] the thickness of the inorganic layer is 100 nm or less,

[0117] the glass transition temperature of the heat fusion layer is 20°C to 180°C,

[0118] the distance between the inorganic layer in the end portion and the electronic device is 100 nm or less.

[0119] Figure 5The illustrated electronic device laminate 10 is provided with an electronic device (organic EL device) 50 having an element substrate 52 and an organic EL element 54, and a sealing layer 12 having a heat fusion layer 30, an inorganic layer 16, and an organic layer 14.

[0120] The sealing layer 12 is laminated on the electronic device 50 by the heat fusion layer 30 being in contact with a face of the electronic device 50 on which the organic EL element 54 is formed (element formation face).

[0121] In the electronic device laminate 10, the thickness of the inorganic layer 16 is 100 nm or less. By setting the thickness of the inorganic layer 16 to 100 nm or less, the flexibility of the inorganic layer 16 can be improved, and the inorganic layer 16 can be bent following the unevenness of the element formation face of the electronic device 50. Thus, the distance between the inorganic layer 16 and the electronic device 50 in the end portion can be reduced, and the intrusion of moisture from the end face of the heat fusion layer 30 can be prevented.

[0122] In the electronic device laminate 10, the glass transition temperature of the heat fusion layer 30 is 20°C to 180°C. Since the heat fusion layer 30 having a glass transition temperature within the above range is dissolved by heating, the heat fusion layer 30 is heated to flow as in the above-described manufacturing method, whereby the distance between the inorganic layer 16 and the electronic device 50 can be reduced.

[0123] In the electronic device laminate 10, by setting the distance between the inorganic layer 16 and the electronic device 50 in the end portion, that is, the thickness of the heat fusion layer 30 to 100 nm or less, the intrusion of moisture from the end face of the heat fusion layer 30 can be suppressed.

[0124] In addition, the distance between the inorganic layer 16 and the electronic device 50 in the end portion can be measured by cutting the electronic device laminate 10 in the thickness direction and observing the cross section using a microscope, a SEM (scanning electron microscope), a microscope, or the like.

[0125] Hereinafter, the parts and the substrate constituting the electronic device laminate will be described in detail.

[0126] <Substrate>

[0127] As the substrate 32, a publicly known sheet-like object (thin film, plate-like object) used as a substrate (support) in various gas barrier films and various laminated functional films, and the like can be used.

[0128] In addition, as the substrate 32, various sheet-like objects used as separators (light peeling separators and heavy peeling separators) in various optical clear adhesives (OCA) can also be used.

[0129] There is no limitation on the material of the substrate 32, and various materials can be used as long as the material can form the organic layer 14, the inorganic layer 16, and the heat fusion layer 30, and does not dissolve in the solvent contained in the composition used to form the organic layer 14. As the material of the substrate 32, various resin materials can be preferably exemplified.

[0130] As the material of the substrate 32, for example, polyethylene (PE), polyethylene naphthalate (PEN), polyamide (PA), polyethylene terephthalate (PET), polyvinyl chloride (PVC), polyvinyl alcohol (PVA), polyacrylonitrile (PAN), polyimide (PI), transparent polyimide, polymethyl methacrylate resin (PMMA), polycarbonate (PC), polyacrylate, polymethacrylate, polypropylene (PP), polystyrene (PS), acrylonitrile-butadiene-styrene copolymer (ABS), cyclic olefin copolymer (COC), cyclic olefin polymer (COP), triacetyl cellulose (TAC), and ethylene-vinyl alcohol copolymer (EVOH), and the like can be exemplified.

[0131] Among them, from the viewpoint of being easily formed so as to be peeled at the interface with the organic layer 14, triacetyl cellulose (TAC) is preferably used as the material of the substrate 32.

[0132] The thickness of the substrate 32 can be appropriately set depending on the use and the material, and the like.

[0133] There is no limitation on the thickness of the substrate 32, but from the viewpoint of being able to sufficiently ensure the mechanical strength of the transfer type gas barrier film, being able to obtain a transfer type gas barrier film having good flexibility, being able to achieve the lightening and thinning of the transfer type gas barrier film, being able to obtain a transfer type gas barrier film that can be easily peeled from the sealing layer 12 at the time of transfer, being easily able to follow the concave-convex of the element formation surface of the electronic device 50 in the heat pressure bonding process, and the like, it is preferably 120 μm to 5 μm, and more preferably 100 μm to 15 μm.

[0134] <Organic Layer>

[0135] The organic layer 14 is a layer that constitutes the sealing layer 12, and is a layer that becomes a base layer for appropriately forming the inorganic layer 16. Also, the organic layer 14 is an organic layer to which the substrate 32 is attached in a peelable manner. That is, the organic layer 14 is an organic layer that can be peeled from the substrate 32. Therefore, the adhesion of the organic layer 14 to the inorganic layer 16 is stronger than the adhesion of the substrate 32 to the organic layer 14.

[0136] Although it will be described later, the inorganic layer 16 formed on the surface of the organic layer 14 is preferably formed by plasma CVD (Chemical Vapor Deposition). Therefore, when the inorganic layer 16 is formed, the organic layer 14 is etched by plasma, and a layer having components of the organic layer 14 and components of the inorganic layer 16, like a mixed layer, is formed between the organic layer 14 and the inorganic layer 16. As a result, the organic layer 14 and the inorganic layer 16 are adhered with a very strong adhesion.

[0137] Therefore, the adhesion of the organic layer 14 and the inorganic layer 16 is much stronger than the adhesion of the substrate 32 and the organic layer 14, and even if the substrate 32 is peeled from the organic layer 14, the organic layer 14 and the inorganic layer 16 are difficult to peel.

[0138] In addition, the thickness of the organic layer 14 refers to the thickness of a layer formed only of the components of the organic layer 14, excluding the above-mentioned mixed layer.

[0139] Further, the organic layer 14 is a base layer for appropriately forming the inorganic layer 16, and therefore the organic layer 14 formed on the surface of the substrate 32 embeds the unevenness of the surface of the substrate 32 and impurities and the like attached to the surface. As a result, the formation surface of the inorganic layer 16 can be made appropriate, and the inorganic layer 16 can be appropriately formed.

[0140] By forming the inorganic layer 16 in the organic layer 14 from which the substrate 32 can be peeled, a transfer type gas barrier film from which the substrate 32 can be peeled is realized.

[0141] Further, the organic layer 14 serves as a protective layer for protecting the inorganic layer 16 after the substrate 32 is peeled.

[0142] When the inorganic layer 16 is formed, the organic layer 14 is subjected to a high temperature, and therefore the heat resistance of the organic layer 14 is preferably high. Specifically, the glass transition temperature (Tg) of the organic layer 14 is preferably 175°C or higher, more preferably 200°C or higher, and further preferably 250°C or higher.

[0143] As described above, the inorganic layer 16 formed on the surface of the organic layer 14 is preferably formed by plasma CVD. By setting the Tg of the organic layer 14 to 180°C or higher, it is possible to preferably inhibit the etching and volatilization of the organic layer 14 based on plasma when the inorganic layer 16 is formed, and it is possible to preferably form a suitable organic layer 14 and inorganic layer 16 and the like from the viewpoint of the same reason as the Tg.

[0144] There is no limitation on the upper limit of the Tg of the organic layer 14, but it is preferably 500°C or lower.

[0145] Further, from the same reason as the Tg, the molecular weight of the resin forming the organic layer 14 is preferably large to some extent.

[0146] Specifically, the molecular weight (weight average molecular weight (Mw)) of the resin forming the organic layer 14 is preferably 500 or greater, more preferably 1000 or greater, and further preferably 1500 or greater.

[0147] In addition, the Tg of the organic layer 14 can be determined by a known method using a differential scanning calorimeter (DSC) or the like. Also, the molecular weight can be measured by a known method using gel permeation chromatography (GPC) or the like. Also, in the case of using a commercially available product, the Tg and the molecular weight of the organic layer 14 can be used as the catalog value.

[0148] The same applies to the heat fusion layer 30 described later with respect to the above points.

[0149] As the forming material of the organic layer 14, various organic layers (organic layers) used as the base layer of the inorganic layer in a known gas barrier film can be used. The organic layer 14 is, for example, a layer formed of an organic compound obtained by polymerization (cross-linking, curing) of a monomer, a dimer, a low oligomer, or the like. The composition for forming the organic layer 14 can contain only one kind of organic compound, or can contain two or more kinds.

[0150] The organic layer 14 contains, for example, a thermoplastic resin, a silicone compound, or the like. As the thermoplastic resin, for example, a polyester, a (meth)acrylic resin, a methacrylic acid-maleic acid copolymer, a polystyrene, a transparent fluororesin, a polyimide, a fluorinated polyimide, a polyamide, a polyamide-imide, a polyether-imide, a cellulose acylate, a polyurethane, a polyether ether ketone, a polycarbonate, an alicyclic polyolefin, a polyarylate, a polyether sulfone, a polysulfone, a fluorene ring-modified polycarbonate, an alicyclic ring-modified polycarbonate, a fluorene ring-modified polyester, an acrylic compound, or the like can be given. As the silicone compound, for example, a polysiloxane can be given.

[0151] With respect to the organic layer 14, from the viewpoint of excellent strength and the viewpoint of glass transition temperature, a polymer containing a radical-curable compound and / or a cation-curable compound having an ether group is preferable.

[0152] With respect to the organic layer 14, from the viewpoint of reducing the refractive index of the organic layer 14, a (meth)acrylic resin containing a (meth)acrylate monomer, an oligomer, or the like as a main component is preferable. With respect to the organic layer 14, by reducing the refractive index, the transparency increases and the light transmittance improves.

[0153] The organic layer 14 is more preferably a (meth)acrylic resin containing, as a main component, a monomer, a dimer, and an oligomer of a (meth)acrylate ester having a functionality of 2 or more, such as dipropylene glycol di(meth)acrylate (DPGDA), trimethylolpropane tri(meth)acrylate (TMPTA), and dipentaerythritol hexa(meth)acrylate (DPHA), and is further preferably a (meth)acrylic resin containing, as a main component, a monomer, a dimer, and an oligomer of a (meth)acrylate ester having a functionality of 3 or more. Also, a plurality of these (meth)acrylic resins can be used. The main component refers to a component having the largest mass ratio among the components contained.

[0154] Also, the organic layer 14 can be peeled from the substrate 32 by being formed of a resin having an aromatic ring.

[0155] The organic layer 14 is preferably a resin containing a bisphenol structure as a main component. The organic layer 14 is more preferably a polyarylate (polyarylate resin (PAR)) as a main component. As is well known, polyarylate refers to an aromatic polyester formed of a bisphenol such as bisphenol A and a divalent acid such as phthalic acid (terephthalic acid, isophthalic acid).

[0156] By making the organic layer 14 contain a resin having a bisphenol structure as a main component, and particularly by making the organic layer 14 contain a polyarylate as a main component, the adhesion of the substrate 32 to the organic layer 14 is appropriate, and the substrate 32 can be easily peeled. Also, from the viewpoints of being able to prevent damage (cracks and scratches, etc.) to the inorganic layer 16 at the time of peeling the substrate 32 due to having appropriate flexibility, being able to stably form a suitable inorganic layer 16 due to having high heat resistance, being able to prevent performance degradation after transfer, and being able to improve the flexibility as an organic thin film transistor, etc., this is preferable.

[0157] Also, the main component refers to a component having the largest mass ratio among the components contained.

[0158] In the case where the organic layer 14 is formed of various resins having an aromatic ring, the organic layer 14 can be formed using a commercially available product as long as it is a resin having an aromatic ring.

[0159] As a commercially available product that can be used for the formation of the organic layer 14, UNIFINER (registered trademark) and U polymer (registered trademark) manufactured by UNITIKA LTD., and Neoprim (registered trademark) manufactured by MITSUBISHI GAS CHEMICAL COMPANY, INC., etc. can be exemplified.

[0160] There is no limitation on the thickness of the organic layer 14, but it is preferably 0.2 to 6 μm, more preferably 0.5 to 5 μm, and further preferably 1 to 3 μm.

[0161] The thickness of the organic layer 14 is preferably 0.2 μm or more from the viewpoint of stably forming a suitable inorganic layer 16, maintaining mechanical strength not to be torn at the time of peeling, and favorably peeling without being affected by impurities such as a separator, and the like. Further, the thickness of the organic layer 14 is preferably 6 μm or less from the viewpoint of achieving light weight and thinning of the gas barrier film 40, obtaining a gas barrier film with high transparency, obtaining favorable peeling properties of the substrate 32, being able to uniformly cure at the time of thermal curing, being able to suppress the content of residual solvent, and obtaining high flexibility, and the like.

[0162] Further, the thickness of the organic layer 14 refers to the thickness of a layer formed only of the forming components of the organic layer 14, excluding the above-mentioned mixed layer.

[0163] The organic layer 14 can be formed by a publicly known method corresponding to the material.

[0164] For example, the organic layer 14 can be formed by a coating method of preparing a composition (resin composition) in which a resin (organic compound) that will become the organic layer 14 and the like are dissolved in a solvent, coating on the substrate 32, and drying the composition. In the formation of the organic layer 14 based on the coating method, as necessary, the resin (organic compound) in the composition can be polymerized (crosslinked) by further irradiating the dried composition with ultraviolet rays.

[0165] The composition for forming the organic layer 14 preferably contains, in addition to the organic compound, an organic solvent, a surfactant, a silane coupling agent, and the like.

[0166] The organic layer 14 is preferably formed by roll-to-roll. In the following description, "roll-to-roll" is also referred to as "RtoR".

[0167] As is well known, RtoR refers to a manufacturing method of feeding a sheet-like material from a roll in which the sheet-like material is wound, transporting the sheet-like material in a long edge direction, and performing film formation, and winding the film-formed sheet-like material into a roll shape. By utilizing RtoR, high productivity and production efficiency can be obtained.

[0168] Further, the organic layer 14 needs to be formed so as to be peelable from the substrate 32. Therefore, a material having peelability can be used as the material of the organic layer 14 as described above, or a peeling layer can be provided between the organic layer 14 and the substrate 32. As the peeling layer, a publicly known peeling layer can be appropriately utilized.

[0169] The peeling force of the substrate 32 and the organic layer 14 is preferably 0.01 to 2 N / 25 mm, more preferably 0.05 to 1 N / 25 mm, and further preferably 0.1 to 0.8 N / 25 mm.

[0170] <Inorganic Layer>

[0171] The inorganic layer 16 is a thin film containing an inorganic compound, and is formed at least on the surface of the organic layer 14. In the sealing layer 12, the inorganic layer 16 mainly exhibits a gas barrier property.

[0172] There are regions on the surface of the substrate 32 where an inorganic compound such as a concave-convex and an impurity is difficult to be deposited. By providing the organic layer 14 on the surface of the substrate 32 and forming the inorganic layer 16 thereon, as described above, the regions where the inorganic compound is difficult to be deposited are covered. Thus, the inorganic layer 16 can be formed without a gap on the surface of the inorganic layer 16.

[0173] There is no limitation on the material of the inorganic layer 16, and various inorganic compounds used in a known gas barrier layer formed of an inorganic compound exhibiting a gas barrier property can be used.

[0174] As the material of the inorganic layer 16, for example, metal oxides such as aluminum oxide, magnesium oxide, tantalum oxide, zirconium oxide, titanium oxide, indium tin oxide (ITO), and the like; metal nitrides such as aluminum nitride, and the like; metal carbides such as aluminum carbide, and the like; silicon oxides such as silicon oxide, silicon oxynitride, silicon oxycarbide, silicon oxycarbide nitride, and the like; silicon nitrides such as silicon nitride, silicon carbide nitride, and the like; silicon carbides such as silicon carbide, and the like; hydrides thereof; mixtures of two or more of them; and inorganic compounds containing hydrogen, and the like can be given. Further, mixtures of two or more of them can also be used.

[0175] Among them, from the viewpoint of high transparency and ability to exhibit an excellent gas barrier property, silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, and mixtures of two or more of them can be preferably used. Among them, a compound containing silicon can be preferably used, and from the viewpoint of ability to exhibit an excellent gas barrier property, silicon nitride can be particularly preferably used.

[0176] As described above, the thickness of the inorganic layer 16 is 100 nm or less.

[0177] From the viewpoint of flexibility and gas barrier property, the thickness of the inorganic layer 16 is preferably 50 nm or less, more preferably 5 to 50 nm, and further preferably 10 to 30 nm.

[0178] From the viewpoint of ability to form the inorganic layer 16 exhibiting a sufficient gas barrier property stably, the thickness of the inorganic layer 16 is preferably 2 nm or more. Further, the inorganic layer 16 is generally brittle, and if it is too thick, cracks, scratches, and peeling, and the like can occur, but by setting the thickness of the inorganic layer 16 to 50 nm or less, occurrence of cracks can be more preferably prevented. Further, flexibility can be improved.

[0179] The inorganic layer 16 can be formed by a known method corresponding to the material.

[0180] For example, plasma CVD such as CCP (Capacitively Coupled Plasma) -CVD and ICP (Inductively Coupled Plasma) -CVD, atomic layer deposition (ALD), sputtering such as magnetron sputtering and reactive sputtering, and various vapor deposition methods such as vacuum evaporation can be preferably cited.

[0181] Among them, as described above, from the viewpoint of improving the adhesion of the organic layer 14 to the inorganic layer 16, plasma CVD such as CCP-CVD and ICP-CVD can be preferably used.

[0182] In addition, the inorganic layer 16 is preferably formed by RtoR.

[0183] <Hot melt layer>

[0184] The hot melt layer 30 is a layer for adhering the gas barrier film 40 to the element formation surface of the electronic device 50.

[0185] Further, the hot melt layer 30 also functions as a protective layer for protecting the inorganic layer 16 that exhibits gas barrier properties.

[0186] In the present application, the hot melt layer 30 uses a hot melt adhesive (HMA). Specifically, the hot melt layer 30 containing a hot melt adhesive is a hot melt layer that is in a solid state at ordinary temperature and flows and exhibits adhesiveness by heating. In the present application, ordinary temperature means 23°C.

[0187] By using a hot melt adhesive as the hot melt layer 30, it is possible to further improve the gas barrier properties compared to conventional transfer-type gas barrier films.

[0188] The hot melt layer 30 preferably flows and exhibits adhesiveness under conditions of 30 to 200°C, more preferably flows and exhibits adhesiveness under conditions of 40 to 180°C, and further preferably flows and exhibits adhesiveness under conditions of 50 to 150°C.

[0189] In the case where the hot melt layer 30 flows and exhibits adhesiveness at ordinary temperature, foil pull-out and the like are likely to occur when the gas barrier film is cut and when the gas barrier film is transferred, and the gas barrier properties are likely to decrease.

[0190] Further, if the temperature at which the hot melt layer 30 flows and exhibits adhesiveness is too high, the heating temperature required when adhering to an adherend becomes high, and heat damage to the substrate 32, the organic layer 14, and the adherend is likely to occur.

[0191] The glass transition temperature Tg of the hot melt layer 30 is 20°C to 180°C, preferably 25°C to 150°C, more preferably 40°C to 140°C, and further preferably 60°C to 120°C.

[0192] By setting the Tg of the hot melt layer 30 within the above range, thermal flowability is easily obtained, and thus it is preferable in terms of improving the heat-based adhesiveness and transferability, enabling adhesion at low temperatures, and improving productivity, and the like.

[0193] In the case of using a hot melt adhesive, there is no limitation on the material as long as the hot melt layer 30 is in a solid state at ordinary temperature and flows and exhibits adhesiveness by heating.

[0194] In the case of using a hot melt adhesive, the hot melt layer 30 preferably contains an amorphous resin as a main component, more preferably an acrylic resin as a main component, and further preferably a resin in which a single acrylic ester monomer is polymerized (an acrylic homopolymer (a homogeneous acrylic polymer)) as a main component.

[0195] By setting the main component of the hot melt layer 30 to be an amorphous resin, and particularly an acrylic resin, it is preferable in terms of obtaining a high-transparency gas barrier film, and the like.

[0196] Further, by setting the main component of the hot melt layer 30 to be an acrylic homopolymer, it is preferable in terms of enabling good heat-based transferability, and preventing blocking when being wound after curing, and the like, in addition to the above advantages. Also, by forming the hot melt layer 30 from an acrylic homopolymer, it is possible to form the hot melt layer 30 to be a layer that flows and exhibits adhesiveness at a relatively low temperature, in addition to the above advantages. Therefore, in the case where high heat resistance is not required for the gas barrier film, it is preferable to use the hot melt layer 30 containing an acrylic homopolymer.

[0197] In the case of using a hot melt adhesive, as long as it is possible to form a hot melt layer 30 that is in a solid state at ordinary temperature and flows and exhibits adhesiveness by heating, it is possible to use various resins that are publicly known, and it is also possible to use commercially available products.

[0198] Specifically, 0415BA (an acrylic homopolymer) manufactured by TAISEI FINE CHEMICAL CO,. LTD., and the #7000 series, and the like can be exemplified.

[0199] In the hot melt layer 30, one or more selected from the group including a styrene acrylic copolymer (a styrene-modified acrylic resin), a urethane acrylic copolymer (a urethane-modified acrylic resin), and a glass transition temperature-adjusting acrylic resin can be contained as needed.

[0200] By adding these components to the heat-sealing layer 30, the Tg of the heat-sealing layer 30 can be increased. Therefore, the heat-sealing layer 30 to which these components are added can be preferably exemplified in cases where the organic thin film transistor is required to have heat resistance, and the like.

[0201] Further, by adding the styrene acrylic copolymer to the heat-sealing layer 30, the hardness of the heat-sealing layer 30 can be adjusted, and thus the balance with the hardness of the adherend can be adjusted. By adding the urethane acrylic copolymer to the heat-sealing layer 30, the adhesion to the inorganic layer 16 can be increased.

[0202] Further, the amount of addition of these components is not limited, and can be appropriately set in accordance with the added component and the target Tg. However, the amount of addition of these components is preferably set to the amount of the main component of the heat-sealing layer 30, which is the above-described amorphous resin and the acrylic resin, and the like.

[0203] The styrene acrylic copolymer, the urethane acrylic copolymer, and the glass transition temperature adjusting acrylic resin are not limited, and various resins used for Tg adjustment of resins, and the like can be used. Further, these components can also use commercially available products.

[0204] As the styrene acrylic copolymer, #7000 series manufactured by TAISEI FINE CHEMICAL CO, LTD., and the like can be exemplified.

[0205] As the urethane acrylic copolymer, ACRIT (registered trademark) 8UA series manufactured by TAISEI FINE CHEMICAL CO, LTD., such as ACRIT 8UA347H, and the like can be exemplified.

[0206] As the glass transition temperature adjusting acrylic resin, PMMA (for example, DIANAL (registered trademark) manufactured by Mitsubishi Chemical Corporation., and the like), and the like can be exemplified.

[0207] The thickness of the heat-sealing layer 30 is not limited, and can be appropriately set to a thickness at which sufficient adhesion and the protection performance of the inorganic layer 16 can be obtained, by sufficiently reducing the distance between the inorganic layer 16 and the electronic device 50 in the end portion after heat pressing, in accordance with the material of the heat-sealing layer 30, and the like. The thickness of the heat-sealing layer 30 is preferably 1 to 30 μm, more preferably 2 to 20 μm, and further preferably 3 to 10 μm.

[0208] The thickness of the heat-adhering layer 30 is preferably 1 μm or more from the viewpoint of obtaining sufficient adhesion at the time of transfer, preventing a decrease in gas barrier properties at the time of peeling the substrate 32 (after transfer), and the like. The thickness of the heat-adhering layer 30 is preferably 30 μm or less from the viewpoint of sufficiently reducing the distance between the inorganic layer 16 and the electronic device 50 in the end portion after heat-pressing, obtaining a gas barrier film 40 with high transparency, being able to make the gas barrier film 40 thin and light, and the like.

[0209] <Electronic Device>

[0210] The electronic device 50 is a known organic EL device such as an organic EL display and an organic EL illuminating device.

[0211] Figure 5 In the illustrated example, the element substrate 52 and the plurality of organic EL elements 54 formed on the element substrate 52 are shown as the constituent elements of the electronic device 50, but the electronic device 50 can have other layers. For example, the electronic device can have a structure in which an insulating film, a transparent electrode layer (TFT (Thin Film Transistor)), an insulating film, the organic EL element 54, and an insulating film are sequentially stacked on the element substrate 52. Further, a passivation film that protects the organic EL element 54 can be provided.

[0212] (Element Substrate)

[0213] As the element substrate 52, various element substrates used as element substrates in conventional organic EL devices, such as a resin film, a glass substrate, and the like, can be used.

[0214] (Organic EL Element)

[0215] The organic EL element 54 has the same structure as the organic EL element possessed by conventional organic EL devices. That is, the organic EL element 54 has a hole-injection layer, a hole-transport layer, a light-emitting layer, a positive hole-blocking layer, an electron-transport layer, an electron-injection layer, and a cathode, and the like.

[0216] The height of the organic EL element 54 is about 0.1 μm to 10 μm, for example. Further, the size of the organic EL element 54 in the planar direction is about 0.1 μm x 0.1 μm to 10 μm x 10 μm, for example.

[0217] In the above-described embodiments, an organic EL device is exemplified as the electronic device, but the electronic device is not limited thereto, and various electronic devices such as a solar cell can be used as the electronic device.

[0218] The electronic device manufactured by the manufacturing method of the electronic device laminate of the present application has less damage to the inorganic layer 16, and exhibits excellent gas barrier properties with high durability over a long period of time, and thus can be preferably used for an organic EL device having a weak organic EL element to moisture.

[0219] The manufacturing method of the electronic device laminate of the present application and the electronic device laminate have been described in detail above, but the present application is not limited to the above-described mode, and various modifications or changes can be made within the scope of the gist of the present application.

[0220] Examples

[0221] The present application will be described in detail below with reference to examples. The present application is not limited to the specific examples shown below.

[0222] [Example 1]

[0223] Preparation of the gas barrier film

[0224] A TAC (triacetyl cellulose) film (manufactured by FUJIFILM Corporation, thickness: 60 μm, width: 1000 mm, length: 100 m) was used as the substrate 32, and a sealing layer 12 (organic layer, inorganic layer, and heat fusion layer) was formed on the substrate 32 in the following steps.

[0225] (Formation of the organic layer)

[0226] A polyarylate (UNIFINER (registered trademark) M-2000H manufactured by UNITIKA LTD.) and cyclohexanone were weighed in a weight ratio of 5:95, and dissolved at normal temperature to prepare a coating solution having a solid content concentration of 5%. The Tg of the polyarylate used was 275°C (catalog value).

[0227] The coating solution was applied to the above-described substrate by RtoR using a die coater, and passed through a drying zone at 130°C for 3 minutes. A protective film of PE (polyethylene) was attached before contact with a first film surface contact roller (a roller that contacts the side of the sealing layer 12 of the substrate 32), and then wound up. The thickness of the organic layer 14 formed on the substrate 32 was 2 μm.

[0228] (Formation of the inorganic layer)

[0229] A general CVD device that winds a substrate on a roller and forms a film was used to form a silicon nitride layer as the inorganic layer 16 on the surface of the organic layer 14.

[0230] The CVD apparatus has a film forming apparatus based on CCP-CVD, a roller that becomes a counter electrode and that winds and transports the substrate, a guide roller that peels a protective film laminated on an organic layer, a recovery roller that winds the peeled protective film, a loading section of a roller that winds a long protective film, and a guide roller that laminates a protective film on the surface of an inorganic layer on which film formation has been completed. In addition, the CVD apparatus uses an apparatus having two or more film forming units (film forming apparatuses).

[0231] The substrate 32 on which the organic layer 14 is formed is fed from the roller loaded in the loading section, and the protective film is peeled after passing through the last film surface contact roller before film formation, and the inorganic layer 16 is formed on the exposed organic layer 14. In order to form the inorganic layer 16, two electrodes (film forming units) are used, and the source gases are silane gas, ammonia gas, and hydrogen gas. As for the supply amounts of the source gases, the first film forming unit is set to 150 seem of silane gas, 300 seem of ammonia gas, and 500 seem of hydrogen gas, and the second film forming unit is set to 150 seem of silane gas, 350 seem of ammonia gas, and 500 seem of hydrogen gas. In the first film forming unit and the second film forming unit, the plasma excitation power is set to 2.5 kW, and the frequency of the plasma excitation power is set to 13.56 MHz. The roller is supplied with a bias power of 0.4 MHz and 0.5 kW. Also, as for the roller, the temperature is controlled to 30°C by a cooling mechanism. The film forming pressure is set to 50 Pa. The protective film of PE is attached to the film surface of the inorganic layer 16 immediately after film formation, and then wound. The film thickness of the inorganic layer 16 is 20 nm.

[0232] (Formation of heat fusion layer)

[0233] Next, a general organic film forming apparatus that forms a film by a coating method using RtoR was used to form a heat fusion layer 30 on the surface of the inorganic layer 16.

[0234] First, an acrylic homopolymer (manufactured by Taisei Fine Chemical Co., Ltd., 0415BA) was prepared, and diluted with ethyl acetate to make a composition having a solid content concentration of 20 mass%. The acrylic homopolymer is an amorphous substance, has a Tg of 20°C, and exhibits adhesiveness by flowing at 100°C.

[0235] The composition was coated on the surface of the inorganic layer 16 using a die coater, and then passed through a drying zone at 80°C. The passing time in the drying zone was set to 3 minutes. Thus, the composition was dried and cured to form the heat fusion layer 30 on the surface of the inorganic layer 16.

[0236] In addition, before coating the composition, the protective film laminated on the surface of the inorganic layer 16 was peeled. The thickness of the heat fusion layer formed on the surface of the inorganic layer 16 was 5 μm.

[0237] From the above, a long roll-shaped transfer-type gas barrier film was produced. From the long roll-shaped transfer-type gas barrier film, a gas barrier film 40 was cut out in a size of 100 mm x 100 mm.

[0238] <Production of Organic EL Device>

[0239] A polyimide layer having a thickness of 100 μm and a size of 100 mm x 100 mm was formed on a glass substrate as a device substrate 52, and an organic EL device 54 was formed on the polyimide layer in the following steps.

[0240] (Formation of Organic EL Device)

[0241] The periphery of the device substrate was masked by ceramics. Further, the masked device substrate was loaded into a general vacuum evaporation device, and an electrode made of aluminum having a thickness of 100 nm was formed by vacuum evaporation, and further, a lithium fluoride layer having a thickness of 1 nm was formed. Subsequently, the following organic compound layers were sequentially formed on the device substrate on which the electrode and the lithium fluoride layer were formed by vacuum evaporation.

[0242] • (Light-emitting layer and electron transport layer) Tris(8-hydroxyquinoline) aluminum: film thickness 60 nm

[0243] • (2nd hole transport layer) N,N'-diphenyl-N,N'-dinaphthylbenzidine: film thickness 40 nm

[0244] • (1st hole transport layer) Copper phthalocyanine: film thickness 10 nm

[0245] Further, the device substrate on which these layers were formed was loaded into a general sputtering device, ITO (Indium Tin Oxide) was used as a target, and a transparent electrode made of an ITO thin film having a thickness of 0.2 μm was formed by DC magnetron sputtering, and thus an organic EL device 54 using an organic EL material was formed.

[0246] The size of the organic EL device 54 was set to 10 μm x 10 μm and the height was set to 5 μm.

[0247] The organic EL device 54 was arranged in a square on the device substrate 52 at a pitch of 50 μm.

[0248] By the above, an electronic device (organic EL device) 50 was produced.

[0249] <Thermal Press Bonding Process>

[0250] As a bonding device for performing the hot pressing process, a bonding device is used that has a flat worktable 100 and a roller 102 disposed above the worktable 100. Both the worktable 100 and the roller 102 have heating mechanisms. Furthermore, the roller 102 is made of silicone rubber. The worktable 100 and the roller 102 are disposed in a pressure-reducing chamber, and the pressure inside the pressure-reducing chamber can be reduced using a rotary pump to perform the bonding.

[0251] Adjust the temperature of the worktable 100 to 25°C and set the roller 102 to 90°C. Set the pressure in the pressure reduction chamber to 0.1 Pa.

[0252] The electronic device 50 fabricated above is placed on the worktable 100, and the gas barrier film 40 fabricated above is laminated onto the component forming surface of the electronic device 50. At this time, the heat-bonded layer 30 is oriented toward the component forming surface side.

[0253] The gas barrier film 40 is pressed from the substrate 32 side using roller 102, and the roller 102 is moved parallel from the end to heat-press the gas barrier film 40 to the electronic device 50.

[0254] Set the moving speed of roller 102 to 1 m / min and adjust the roller-based pressure to 0.3 MPa.

[0255] The distance between the inorganic layer 16 and the electronic device 50 in the crimped end was measured and found to be 50 nm.

[0256] In addition, the distance from the end of the gas barrier film 40 to the organic EL element 54 is set to 0.5 mm.

[0257] <Stripping Process>

[0258] After the hot-pressing process, the substrate 32 was peeled off at the interface with the organic layer 14.

[0259] The above steps were used to fabricate an electronic device stack.

[0260] [Example 2]

[0261] In the hot pressing process, the temperature of the worktable 100 was adjusted to 90°C and the temperature of the roller 102 was set to 30°C. Otherwise, the electronic device laminate was fabricated in the same manner as in Example 1.

[0262] The distance between the inorganic layer 16 and the electronic device 50 in the crimped end was measured and the result was 70 nm.

[0263] [Example 3]

[0264] The roller temperature was set to 120°C, and the electronic device laminate was fabricated in the same manner as in Example 1.

[0265] The distance between the inorganic layer 16 and the electronic device 50 in the end portion after the press bonding was measured, and the result was 25 nm.

[0266] [Example 4]

[0267] A styrene acrylic polymer was added so that the glass transition temperature Tg of the hot melt layer was 80°C, and otherwise, the electronic device laminate was produced in the same manner as in Example 1.

[0268] The distance between the inorganic layer 16 and the electronic device 50 in the end portion after the press bonding was measured, and the result was 80 nm.

[0269] [Example 5]

[0270] The roller-based pressure was set to 1 MPa, and otherwise, the electronic device laminate was produced in the same manner as in Example 1.

[0271] The distance between the inorganic layer 16 and the electronic device 50 in the end portion after the press bonding was measured, and the result was 20 nm.

[0272] [Example 6]

[0273] The thickness of the inorganic layer was set to 5 nm, and otherwise, the electronic device laminate was produced in the same manner as in Example 1.

[0274] The distance between the inorganic layer 16 and the electronic device 50 in the end portion after the press bonding was measured, and the result was 50 nm.

[0275] [Example 7]

[0276] The thickness of the inorganic layer was set to 100 nm, and otherwise, the electronic device laminate was produced in the same manner as in Example 1.

[0277] The distance between the inorganic layer 16 and the electronic device 50 in the end portion after the press bonding was measured, and the result was 50 nm.

[0278] [Example 8]

[0279] The thickness of the hot melt layer before the hot press bonding process was set to 10 μm, and otherwise, the electronic device laminate was produced in the same manner as in Example 1.

[0280] The distance between the inorganic layer 16 and the electronic device 50 in the end portion after the press bonding was measured, and the result was 70 nm.

[0281] [Example 9]

[0282] The thickness of the hot melt layer before the hot press bonding process was set to 2 μm, and otherwise, the electronic device laminate was produced in the same manner as in Example 1.

[0283] The distance between the inorganic layer 16 and the electronic device 50 in the end portion after the press bonding was measured, and the result was 30 nm.

[0284] [Example 10]

[0285] An electronic device laminate was produced in the same manner as in Example 1, except that the thickness of the organic layer was set to 5 μm.

[0286] The distance between the inorganic layer 16 and the electronic device 50 in the end portion after the press bonding was measured, and the result was 60 nm.

[0287] [Example 11]

[0288] An electronic device laminate was produced in the same manner as in Example 1, except that the thickness of the organic layer was set to 0.5 μm.

[0289] The distance between the inorganic layer 16 and the electronic device 50 in the end portion after the press bonding was measured, and the result was 40 nm.

[0290] [Example 12]

[0291] An electronic device laminate was produced in the same manner as in Example 1, except that the thickness of the substrate was set to 80 μm.

[0292] The distance between the inorganic layer 16 and the electronic device 50 in the end portion after the press bonding was measured, and the result was 90 nm.

[0293] [Example 13]

[0294] An electronic device laminate was produced in the same manner as in Example 1, except that the thickness of the substrate was set to 40 μm.

[0295] The distance between the inorganic layer 16 and the electronic device 50 in the end portion after the press bonding was measured, and the result was 30 nm.

[0296] [Comparative Example 1]

[0297] An electronic device laminate was produced in the same manner as in Example 1, except that, in the production of the gas barrier film, no heat fusion layer was formed, and the gas barrier film was attached to the electronic device using an adhesive as described below.

[0298] (Attachment of Gas Barrier Film Using Adhesive)

[0299] The adhesive was set to a 50% by weight solution prepared by dissolving an epoxy resin (JER1001) at 48%, an epoxy resin (JER152) at 48%, and a silane coupling agent (KBM502) at 4% in MEK (methyl ethyl ketone) after the addition of each.

[0300] The adhesive was applied to the inorganic layer of the gas barrier film to a prescribed thickness, and after the solvent was sufficiently volatilized, the electronic device was laminated, and the electronic device laminate was produced by leaving it at 100°C for 100 hours and curing it.

[0301] The distance between the inorganic layer in the end portion after lamination and the electronic device was measured, and the result was 1000 nm.

[0302] [Assessment]

[0303] <Lightness>

[0304] After the electronic device laminate produced in each of the examples and comparative examples was produced, the entire lightness was measured by applying a voltage of 7 V to each electronic device laminate using a power measuring unit, SMU2400 manufactured by Keithley, and causing it to emit light. Then, it was left in an environment of a temperature of 60°C and a humidity of 90% for 200 hours. After being left for 200 hours, the electronic device laminate was lit in the same manner as described above, and the entire lightness was measured again, and the proportion of the decrease in lightness was measured.

[0305] AAA: The decrease in lightness was 1% or less.

[0306] AA: The decrease in lightness was more than 1% and less than 3%.

[0307] A: The decrease in lightness was more than 3% and less than 5%.

[0308] B: The decrease in lightness was more than 5% and less than 8%.

[0309] C: The decrease in lightness was more than 8% and less than 10%.

[0310] D: The decrease in lightness was more than 10% and less than 30%.

[0311] E: The decrease in lightness was more than 30%, and the decrease in light emission was visually recognized by the naked eye.

[0312] With respect to the assessment, C or less was allowed to be NG.

[0313] <Dark Spot>

[0314] Further, after being left for 200 hours, the electronic device laminate was lit, and observation was performed from the sealing layer side using a microscope, and the presence or absence of the generation of a dark spot was confirmed, and the assessment was performed according to the following criteria.

[0315] A: The generation of a dark spot was not observed at all

[0316] B: The generation of a dark spot was slightly observed

[0317] C: Dark spot generation is clearly observed

[0318] D: The proportion of the dark spot area is large

[0319] <flexibility>

[0320] After the electronic device laminate of each of the examples and the comparative examples was bent 100,000 times at φ8 mm, the luminance was measured in the same manner as described above, the proportion of the luminance reduction with respect to the luminance after the electronic device laminate was just produced was calculated, and the evaluation was performed according to the same criteria as described above.

[0321] The results are shown in Table 1 below.

[0322] [Table 1]

[0323]

[0324] As is apparent from Table 1, in the electronic device laminate produced by the production method of the present application, even when left in a high-temperature and high-humidity environment, the luminance reduction is small, and the generation of dark spots is also small, and the deterioration of the organic EL element can be suppressed, as compared with the comparative example. Also, it is apparent that the electronic device laminate produced by the production method of the present application has high flexibility, as compared with the comparative example.

[0325] Also, as is apparent from the comparison between Example 1 and Example 2, in the heat pressure bonding step, the hot melt layer can be heated and made to flow easily under the condition that the temperature of the substrate side is higher than the temperature of the electronic device side, and thus the distance between the inorganic layer and the electronic device can be reduced by pressure.

[0326] Also, as is apparent from the comparison between Example 1 and Example 3, in the heat pressure bonding step, the hot melt layer can be heated and made to flow easily under the condition that the temperature of the substrate side is further increased, and thus the distance between the inorganic layer and the electronic device can be reduced by pressure.

[0327] Also, as is apparent from the comparison between Example 1 and Example 4, in the heat pressure bonding step, the hot melt layer can be heated and made to flow easily under the condition that the glass transition temperature Tg of the hot melt layer is low, and thus the distance between the inorganic layer and the electronic device can be reduced by pressure.

[0328] Also, as is apparent from the comparison between Example 1 and Example 5, if the pressure in the heat pressure bonding step is high, the distance between the inorganic layer and the electronic device can be reduced.

[0329] Also, as is apparent from the comparison between Example 1 and Examples 1 to 5, the narrower the distance between the inorganic layer and the electronic device, the smaller the luminance reduction after the high-humidity heat test, the fewer the generation of dark spots, and the higher the durability. Also, it is apparent that the luminance reduction after the bending test is also small and the flexibility is high.

[0330] Also, as is clear from the comparison of Example 1, Example 6, and Example 7, if the thickness of the inorganic layer is thin, the gas barrier property decreases, and thus the durability and flexibility also decrease, and if the thickness of the inorganic layer is thick, the flexibility decreases, and thus it is preferable to be 10 nm to 30 nm.

[0331] Also, as is clear from the comparison of Example 1, Example 8, and Example 9, the thinner the thickness of the heat-fusible layer (thickness before the heat-pressing step), the more the distance between the inorganic layer and the electronic device after the heat-pressing can be reduced.

[0332] Also, as is clear from the comparison of Example 1, Example 10, and Example 11, the thinner the organic layer, the more the distance between the inorganic layer and the electronic device after the heat-pressing can be reduced. This is considered to be because if the organic layer is thick, it is difficult to transfer heat to the heat-fusible layer during the heat-pressing step, and the flowability decreases.

[0333] Also, as is clear from the comparison of Example 1, Example 12, and Example 13, the thinner the substrate, the more the distance between the inorganic layer and the electronic device after the heat-pressing can be reduced. This is considered to be because if the substrate is thick, it is difficult to transfer heat to the heat-fusible layer during the heat-pressing step, and the flowability decreases.

[0334] Also, as is clear from the comparison of Example 6 to Example 13, the narrower the distance between the inorganic layer and the electronic device, the less the luminance decreases after the high humidity heat test, the fewer the dark spots are generated, and the higher the durability is. Also, it is clear that the luminance decreases less after the bending test, and the flexibility is high.

[0335] From the above results, the effects of the present application are clear.

[0336] Explanation of Symbols

[0337] 10 - electronic device laminate, 12 - sealing layer, 14 - organic layer, 16 - inorganic layer, 30 - heat-fusible layer, 32 - substrate, 40 - gas barrier film, 50 - electronic device, 52 - element substrate, 54 - organic EL element, 100 - workbench, 102 - roller.

Claims

1. A method for manufacturing an electronic device laminate, comprising: a step of preparing a gas barrier film having a sealing layer and a substrate, the sealing layer being a sealing layer having a heat fusion layer, an inorganic layer, and an organic layer in this order, the substrate being a substrate laminated on the organic layer side of the sealing layer in a manner capable of being peeled from the sealing layer; a heat pressure bonding step of pressure bonding the gas barrier film on an element formation surface of an electronic device having a concavo-convex by heating and pressing the gas barrier film with the heat fusion layer side facing the element formation surface side; and a peeling step of peeling the substrate from the sealing layer, the thickness of the inorganic layer is 100 nm or less, the glass transition temperature of the heat fusion layer is 20°C to 180°C, in the heat pressure bonding step, the heating temperature and the pressure applied are adjusted so that the distance between the inorganic layer in the end portion and the electronic device after heat pressure bonding is less than 100 nm.

2. The method for manufacturing an electronic device laminate according to claim 1, wherein the electronic device is an organic electroluminescent device.

3. The method for manufacturing an electronic device laminate according to claim 1 or 2, wherein in the heat pressure bonding step, heating and pressing of the gas barrier film are performed using a roll.

4. The method for manufacturing an electronic device laminate according to claim 1, wherein in the heat pressure bonding step, heating is performed from the substrate side.

5. The method for manufacturing an electronic device laminate according to claim 4, wherein in the heat pressure bonding step, heating is performed from the electronic device side.

6. The method for manufacturing an electronic device laminate according to claim 5, wherein the heating temperature on the substrate side is higher than the heating temperature on the electronic device side.

7. The method for manufacturing an electronic device laminate according to claim 1 or 2, wherein the substrate is a triacetyl cellulose film.

8. The method for manufacturing an electronic device laminate according to claim 1 or 2, wherein the thickness of the substrate is 0.1 μm to 100 μm.

9. An electronic device laminate having: an electronic device, an element formation surface of the electronic device having a concavo-convex; and a transfer layer having a heat fusion layer, an inorganic layer, and an organic layer in this order laminated on the element formation surface, the thickness of the inorganic layer being 100 nm or less, the glass transition temperature of the heat fusion layer being 20°C to 180°C, the distance between the inorganic layer in the end portion and the electronic device being 100 nm or less.

10. The electronic device laminate according to claim 9, wherein the electronic device is an organic electroluminescent device.

11. An electronic device laminate having: an electronic device, an element formation surface of the electronic device having a concavo-convex; and a transfer layer having a heat fusion layer, an inorganic layer, and an organic layer in this order laminated on the element formation surface, the thickness of the inorganic layer being 100 nm or less, the glass transition temperature of the heat fusion layer being 20°C to 180°C, the distance between the inorganic layer in the end portion and the electronic device being 100 nm or less.

12. The electronic device laminate according to claim 11, wherein the electronic device is an organic electroluminescent device.

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