Spectral Sensor Based on a Composite Dielectric-Gate Dual-Transistor Photosensitive Detector

Abstract

The present invention discloses a spectral sensor based on a composite dielectric gate bipolar transistor photosensitive detector, which includes a plurality of composite dielectric gate bipolar transistor photosensitive detectors stacked vertically. By utilizing the absorption characteristics of light incident on silicon materials, each layer of the composite dielectric gate bipolar transistor photosensitive detector can sense the light intensity in different spectral bands, and the spectral information can be retrieved through post-processing. Compared with existing spectrometers, the present invention has many advantages such as small volume, low cost, and the ability to extract spectral information from a matrix light source.

Description

Technical Field

[0001] The present invention belongs to the field of integrated circuits and relates to a spectral sensor based on a composite dielectric gate dual transistor photosensitive detector. Background Art

[0002] A spectrometer is a device that decomposes complex light into spectral lines and can be divided into two categories: classical spectrometers and new spectrometers. Classical spectroscopic instruments are based on the principle of spatial dispersion; new spectroscopic instruments are based on the principle of modulation. However, both classical spectrometers and new spectrometers have the disadvantages of large volume, high cost, and the ability to analyze only the spectral information of a single point light source.

[0003] In the existing patent CN201210442007.X, a dual transistor photosensitive detector was proposed. The feature of this sensor is that a single semiconductor device can achieve the complete functions of reset, photosensing, and readout, thus constituting a complete pixel, which can greatly improve the fill factor of the pixel. However, it still has the disadvantages of large volume, high cost, and the ability to analyze only the spectral information of a single point light source.

[0004] Therefore, we propose a spectral sensor based on a composite dielectric gate dual transistor photosensitive detector to solve the above problems. Summary of the Invention

[0005] (I) Technical Problems to be Solved

[0006] Aiming at the deficiencies of the prior art, the present invention provides a spectral sensor based on a composite dielectric gate dual transistor photosensitive detector to solve the problems existing in the prior art spectral sensors.

[0007] (II) Technical Solutions

[0008] To achieve the above invention purpose, the present invention provides the following technical solutions:

[0009] A spectral sensor based on a composite dielectric gate dual transistor photosensitive detector includes multiple layers of composite dielectric gate dual transistor photosensitive detectors stacked vertically.

[0010] Preferably, an isolation layer is provided between adjacent composite dielectric gate dual transistor photosensitive detectors.

[0011] Preferably, the number of layers of the composite dielectric gate dual transistor photosensitive detector is 3 layers.

[0012] Preferably, the composite dielectric gate dual transistor photosensitive detector includes a MOS-C part and a MOSFET part, and the MOSFET part is arranged on one side of the MOS-C part.

[0013] The MOS-C part includes a first bottom dielectric layer, a first charge-coupling layer, a second top dielectric layer, and a first control gate sequentially stacked above a first P-type semiconductor substrate;

[0014] The MOSFET part includes a second bottom dielectric layer, a second charge-coupling layer, a second top dielectric layer, and a second control gate sequentially stacked above a second P-type semiconductor substrate;

[0015] The second bottom dielectric layer is connected to the first bottom dielectric layer, the second charge-coupling layer is connected to the first charge-coupling layer, the second top dielectric layer is connected to the first top dielectric layer, and the second control gate is connected to the first control gate plate.

[0016] Preferably, an N-type source region and an N-type drain region are provided on one side of the second P-type semiconductor substrate close to the second bottom dielectric layer.

[0017] Preferably, a threshold adjustment implantation region is provided on one side of the second P-type semiconductor substrate close to the second bottom dielectric layer.

[0018] Preferably, the widths of the first bottom dielectric layer, the first charge-coupling layer, the second top dielectric layer, and the first control gate are all a, and the widths of the second bottom dielectric layer, the second charge-coupling layer, the second top dielectric layer, and the second control gate are all b, where b is a / 3 - 2a / 3.

[0019] Beneficial effects: The spectral sensor based on the composite dielectric gate dual-transistor photosensitive detector of the present invention has the following beneficial effects: The present invention uses the dual-transistor photosensitive detector to propose the concept of a spectral sensor, and utilizes the absorption characteristics of light incident on silicon materials, so that the array composed of each layer of the dual-transistor photosensitive detector can sense the light intensity in different spectral bands, and the spectral information can be retrieved through post-processing. Compared with existing spectrometers, the present invention has many advantages such as small volume, low cost, and the ability to extract spectral information from a planar array light source.

[0020] The present invention also discloses a spectral sensing array based on a composite dielectric gate dual-transistor photosensitive detector, including the spectral sensors based on the composite dielectric gate dual-transistor photosensitive detector as described in any one of the above arranged in an array on a plane.

[0021] Beneficial effects: The spectral sensor array based on the composite dielectric gate dual-transistor photosensitive detector of the present invention utilizes the absorption characteristics of light incident on silicon materials, so that the array composed of each layer of the composite dielectric gate dual-transistor photosensitive detector can sense the light intensity in different spectral bands, and the spectral information can be retrieved through post-processing. Compared with existing spectrometers, the present invention has many advantages such as small volume, low cost, and the ability to extract spectral information from a planar array light source.

[0022] The present invention also discloses a spectral sensing chip based on a composite dielectric gate bipolar transistor photosensitive detector, including the spectral sensing array based on the composite dielectric gate bipolar transistor photosensitive detector as described above.

[0023] Beneficial effects: The spectral sensing chip based on the composite dielectric gate bipolar transistor photosensitive detector of the present invention is small in size and low in cost, and can extract spectral information from a planar array light source. By utilizing the absorption characteristics of light incident on silicon materials, the array composed of each layer of the composite dielectric gate bipolar transistor photosensitive detector can sense the light intensity in different spectral bands, and the spectral information can be inversely calculated through post-processing. Description of the Drawings

[0024] Figure 1 is a schematic structural diagram of the composite dielectric gate bipolar transistor photosensitive detector;

[0025] Figure 2 is a schematic structural diagram of the spectral sensor based on the composite dielectric gate bipolar transistor photosensitive detector;

[0026] Figure 3 is a schematic structural diagram of the spectral sensing array based on the composite dielectric gate bipolar transistor photosensitive detector;

[0027] Figure 4 is a schematic structural diagram of the spectral sensing chip based on the composite dielectric gate bipolar transistor photosensitive detector. Detailed Embodiments

[0028] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0029] Please refer to Figures 1-4 , the spectral sensor, spectral sensing array, spectral sensing chip and spectral inversion algorithm implemented by the composite dielectric gate bipolar transistor photosensitive detector of the present invention.

[0030] The spectral sensor based on the composite dielectric gate bipolar transistor photosensitive detector of the present invention includes multiple layers of composite dielectric gate bipolar transistor photosensitive detectors stacked vertically.

[0031] Preferably, an isolation layer is provided between adjacent composite dielectric gate bipolar transistor photosensitive detectors.

[0032] Preferably, the number of layers of the composite dielectric gate bipolar transistor photosensitive detector is 3. With a reasonable number of layers, it is possible to detect the red, yellow, and blue light in visible light while ensuring accuracy.

[0033] Preferably, the composite dielectric gate dual-transistor photosensitive detector includes a MOS-C part and a MOSFET part. The MOSFET part is disposed on one side of the MOS-C part.

[0034] The MOS-C part includes a first bottom dielectric layer, a first charge-coupling layer, a second top dielectric layer, and a first control gate sequentially stacked above a first P-type semiconductor substrate.

[0035] The MOSFET part includes a second bottom dielectric layer, a second charge-coupling layer, a second top dielectric layer, and a second control gate sequentially stacked above a second P-type semiconductor substrate.

[0036] The second bottom dielectric layer is connected to the first bottom dielectric layer, the second charge-coupling layer is connected to the first charge-coupling layer, the second top dielectric layer is connected to the first top dielectric layer, and the second control gate is connected to the first control gate plate.

[0037] Preferably, an N-type source region and an N-type drain region are provided on one side of the second P-type semiconductor substrate close to the second bottom dielectric layer. Preferably, a threshold adjustment implantation region is provided on one side of the second P-type semiconductor substrate close to the second bottom dielectric layer.

[0038] Preferably, the widths of the first bottom dielectric layer, the first charge-coupling layer, the second top dielectric layer, and the first control gate are all a, and the widths of the second bottom dielectric layer, the second charge-coupling layer, the second top dielectric layer, and the second control gate are all b, where b is a / 3 - 2a / 3.

[0039] The present invention also discloses a spectral sensing array based on a composite dielectric gate dual-transistor photosensitive detector, including spectral sensors of the composite dielectric gate dual-transistor photosensitive detector as described in any one of the above arranged in an array on a plane.

[0040] The present invention also discloses a spectral sensing chip based on a composite dielectric gate dual-transistor photosensitive detector, including the spectral sensing array of the composite dielectric gate dual-transistor photosensitive detector as described above.

[0041] The spectral sensor of the composite dielectric gate dual-transistor photosensitive detector of the present invention proposes the concept of a spectral sensor by using the composite dielectric gate dual-transistor photosensitive detector. It utilizes the absorption characteristics of light incident on silicon materials, enabling the array composed of each layer of the dual-transistor photosensitive detector to sense the light intensity in different spectral bands, and the spectral information can be retrieved through post-processing. Compared with existing spectrometers, the present invention has many advantages such as small volume, low cost, and the ability to extract spectral information from a planar array light source.

[0042] Embodiment:

[0043] Please refer toFigure 1 As shown, the MOS-C part of the composite dielectric-gate dual-transistor photosensitive detector includes a first bottom dielectric layer, a first charge-coupling layer, a first top dielectric layer, and a first control gate that are sequentially stacked above a first P-type semiconductor substrate;

[0044] The MOSFET part of the composite dielectric-gate dual-transistor photosensitive detector includes an N-type source region, an N-type drain region, and a second dielectric layer, a second charge-coupling layer, a second top dielectric layer, and a second control gate that are sequentially stacked above a second P-type semiconductor substrate.

[0045] The second P-type semiconductor substrate, the second dielectric layer, the second charge-coupling layer, the second top dielectric layer, and the second control gate are respectively disposed on one side of the first P-type semiconductor substrate, the first bottom dielectric layer, the first charge-coupling layer, the first top dielectric layer, and the first control gate, and are connected in one-to-one correspondence.

[0046] Please refer to Figure 2 As shown, by using a three-dimensional stacking technology to stack multiple layers of the composite dielectric-gate dual-transistor photosensitive detectors in the vertical direction, the spectral sensor based on the composite dielectric-gate dual-transistor photosensitive detector can be realized. The composite dielectric-gate dual-transistor photosensitive detector is configured as a back-illuminated type. When incident light is incident on the silicon substrate, due to the optical properties of the silicon material, each layer of the composite dielectric-gate dual-transistor photosensitive detector will respectively receive optical information in different spectral bands, realizing the spectral detection of a point light source.

[0047] Please refer to Figure 3 As shown, when the spectral sensor forms an array, a spectral sensing array can be obtained. The spectral detection of a spatial light source can be realized by using the spectral sensing array. Please refer to Figure 4 As shown, when the spectral sensing array is equipped with a peripheral circuit, a spectral sensing chip can be obtained. The light intensity information of each layer of the composite dielectric-gate dual-transistor photosensitive detection array can be read by using the spectral sensing chip. By subtracting the light intensity information of each layer of the composite dielectric-gate dual-transistor photosensitive detection array bit by bit, different spectral information can be obtained. The pseudo-code is as follows:

[0048] Algorithm: Spectral data recovery algorithm for a spectral sensor based on a composite dielectric-gate dual-transistor photosensitive detector

[0049] Input: Data of each layer of the spectral sensing chip raw[LAYERS][ROWS][COLS]

[0050] Output: Spectral data spectrum[LAYERS][ROWS][COLS]

[0051] function getSpectrum(raw)

[0052] for layer = 1 to LAYERS do

[0053] for row = 1 to ROWS do

[0054] for col = 1 to COLS do

[0055] spectrum[layer][row][col] = raw[layer - 1][row][col] - raw[layer][row][col]

[0056] end for

[0057] end for

[0058] end for

[0059] return spectrum

[0060] end function

[0061] The smaller the vertical thickness of the multi-layer composite dielectric gate bipolar transistor photosensitive detector for three-dimensional stacking, the higher its spectral resolution.

Claims

1. A spectral sensor based on a composite dielectric-gated dual transistor photosensitive detector, comprising a plurality of composite dielectric-gated dual transistor photosensitive detectors stacked vertically; The composite dielectric-gated dual transistor photosensitive detector includes a MOS-C part and a MOSFET part, and the MOSFET part is disposed on one side of the MOS-C part. The MOS-C part includes a first bottom dielectric layer, a first charge-coupling layer, a second top dielectric layer, and a first control gate sequentially stacked above a first P-type semiconductor substrate. The MOSFET part includes a second bottom dielectric layer, a second charge-coupling layer, a second top dielectric layer, and a second control gate sequentially stacked above a second P-type semiconductor substrate. The second bottom dielectric layer is connected to the first bottom dielectric layer, the second charge-coupling layer is connected to the first charge-coupling layer, the second top dielectric layer is connected to the first top dielectric layer, and the second control gate is connected to the first control gate plate.

2. The spectral sensor based on the composite dielectric gate dual-transistor photosensitive detector according to claim 1, characterized in that: An isolation layer is provided between adjacent composite dielectric-gated dual transistor photosensitive detectors.

3. The spectral sensor based on the composite dielectric-gate dual transistor photosensitive detector according to claim 1, characterized in that: The number of layers of the composite dielectric-gated dual transistor photosensitive detector is 3.

4. The spectral sensor based on a composite dielectric-gate dual transistor photosensitive detector according to claim 1, wherein: An N-type source region and an N-type drain region are provided on one side of the second P-type semiconductor substrate close to the second bottom dielectric layer.

5. The spectral sensor based on a composite dielectric gate dual transistor photosensitive detector according to claim 1, wherein: A threshold adjustment implantation region is provided on one side of the second P-type semiconductor substrate close to the second bottom dielectric layer.

6. The spectral sensor based on the composite dielectric gate dual transistor photosensitive detector according to claim 1, characterized in that: The widths of the first bottom dielectric layer, the first charge-coupling layer, the second top dielectric layer, and the first control gate are all a, and the widths of the second bottom dielectric layer, the second charge-coupling layer, the second top dielectric layer, and the second control gate are all b, where b is a / 3 - 2a / 3.

7. A spectral sensing array based on a composite dielectric gate dual transistor photosensitive detector, characterized in that, A spectral sensor based on the composite dielectric-gated dual transistor photosensitive detector according to any one of claims 1-6, arranged in an array on a plane.

8. A spectral sensing chip based on a composite dielectric gate dual transistor photosensitive detector, characterized in that, A spectral sensing array based on the composite dielectric-gated dual transistor photosensitive detector according to claim 7.

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