Interstage matching network circuit and radio frequency power amplifier

Abstract

The embodiment of the present application provides an interstage matching network circuit and a radio frequency power amplifier. The interstage matching network circuit uses a first bonding wire and a second bonding wire to tune the total inductance value of the interstage matching network circuit. Since there is a certain space between the first bonding wire, the second bonding wire and the substrate on which the interstage matching network circuit is integrated, and the loss of electromagnetic waves in the air is minimal, the problem of electromagnetic wave loss caused by the substrate is avoided. In order to reduce the loss of inductance, for the radio frequency power amplifier using the interstage matching network circuit, the gain amplitude of the radio frequency power amplifier is increased. The communication device using the radio frequency power amplifier achieves the maximum peak power of the final output under the premise of lower power consumption.

Description

Technical Field

[0001] The present application relates to the field of integrated circuits, and in particular to an inter-stage matching network circuit and a radio frequency power amplifier. Background Art

[0002] Radio frequency (RA) power amplifiers (PAs) are important components of communication devices. Currently, radio frequency integrated circuits (RFICs) are an evolving trend for RA power amplifiers. RFICs are characterized by miniaturization and integration.

[0003] To achieve higher output power and gain in RF power amplifiers, a multi-stage power amplifier cascade is typically used. To achieve power and impedance matching between multiple stages, an interstage matching network (ISMN) is required between two power amplifier stages. For example, an ISMN is integrated into a laterally-diffused metal-oxide semiconductor (LDMOS), where the ISMN circuit is integrated onto an LDMOS substrate. An inductor is integrated onto the LDMOS substrate. This inductor is used for impedance matching.

[0004] Because inductors are not ideal, they experience resistance losses in practical applications. Inductors integrated on LDMOS substrates further exacerbate inductor losses due to high electromagnetic wave transmission losses within the LDMOS substrate. As the operating frequency of the RF power amplifier increases, inductor losses become increasingly severe, reducing the amplifier's gain. Communication devices using these RF power amplifiers require higher power consumption to achieve the maximum peak power ultimately output by the communication device. Summary of the Invention

[0005] The embodiment of the present application provides an interstage matching network circuit and a radio frequency power amplifier. The interstage matching network circuit uses a first bonding wire and a second bonding wire to tune the total inductance value of the interstage matching network circuit. Since there is a certain space between the first bonding wire, the second bonding wire and the substrate on which the interstage matching network circuit is integrated, and the loss of electromagnetic waves in the air is minimal, the problem of electromagnetic wave loss caused by the substrate is avoided. In order to reduce the loss of inductance, for the radio frequency power amplifier using the interstage matching network circuit, the gain amplitude of the radio frequency power amplifier is increased. The communication device using the radio frequency power amplifier achieves the maximum peak power of the final output under the premise of lower power consumption.

[0006] A first aspect of the present application provides an inter-stage matching network circuit, comprising: a first bonding wire, a second bonding wire, and a first capacitor;

[0007] The first bonding wire is connected to the first stage of the first capacitor; the second bonding wire is connected to the second stage of the first capacitor; the first bonding wire and the second bonding wire are used to tune the total inductance of the inter-stage matching network circuit. The first bonding wire and the second bonding wire serve as impedance transformers of the inter-stage matching network circuit. In addition to being used to tune the total inductance of the inter-stage matching network circuit, the bonding wires can also be used to interconnect the chip and the package due to their inherent characteristics.

[0008] In the embodiments of the present application, due to the presence of a certain amount of space between the first and second bonding wires and the substrate in which the interstage matching network circuit is integrated, electromagnetic wave loss in air is minimized, thus avoiding the problem of electromagnetic wave loss caused by the substrate. This effectively improves the quality factor of the first and second bonding wires when used as inductors. Since the bonding wires are used as the inductor elements of the interstage matching network circuit, the volume of the bonding wires is much smaller than the original inductor elements, thereby improving the compactness of the interstage matching network circuit and saving the space occupied by the interstage matching network circuit.

[0009] In conjunction with the first aspect above, in one possible implementation, the inter-stage matching network circuit further includes: a driver-stage amplifier and a final-stage amplifier; the first stage of the first capacitor is connected to the driver-stage amplifier; the second stage of the first capacitor is connected to the final-stage amplifier; the first bonding wire provides a drain voltage for the driver-stage amplifier; and the second bonding wire provides a gate voltage for the final-stage amplifier. Through this approach, the first bonding wire can provide a drain voltage for the driver-stage amplifier, and the second bonding wire can provide a gate voltage for the final-stage amplifier, thereby improving the comprehensiveness and feasibility of this solution.

[0010] In conjunction with the first aspect described above, in one possible implementation, the first capacitor is used to isolate the drain voltage of the driver-stage amplifier from the gate voltage of the final-stage amplifier. The first capacitor behaves as an open circuit at DC frequencies and does not behave as a short circuit in the RF operating band. This allows the first capacitor to participate in impedance transformation and matching together with the first and second bonding wires, further reducing the space occupied by the inter-stage matching network circuit.

[0011] In conjunction with the first aspect above, in one possible implementation, the inter-stage matching network circuit further includes a second capacitor and a third capacitor; the first bonding wire is connected to the second capacitor, which is a decoupling capacitor; and the second bonding wire is connected to the third capacitor, which is a decoupling capacitor. This effectively reduces noise in the signal transmitted from the driver-stage amplifier to the final-stage amplifier.

[0012] In combination with the above first aspect, in a possible implementation, the quality factor of the first capacitor is greater than 80, thereby further improving the efficiency of the inter-stage matching network circuit.

[0013] In conjunction with the first aspect above, in one possible implementation, the interstage matching network circuit further includes a substrate; the total inductance of the interstage matching network circuit is determined by the height between the first bond wire and the substrate, the height between the second bond wire and the substrate, the span of the first bond wire, and / or the span of the second bond wire. The substrate is silicon-based gallium nitride, or the substrate is a laterally diffused metal oxide semiconductor. The interstage matching network circuit further includes a first resistor; the second bond wire is connected to the second stage of the first capacitor via the first resistor, wherein the RF operating frequency band of the interstage matching network circuit changes based on changes in the resistance of the first resistor and changes in the total inductance of the interstage matching network circuit.

[0014] In an embodiment of the present application, the interstage matching network circuit may further include a first resistor. This first resistor may be integrated into the substrate of the interstage matching network circuit or placed on the package of an RF power amplifier incorporating the interstage matching network circuit. By varying the resistance value of the first resistor and the total inductance of the interstage matching network circuit, the RF operating frequency band of the interstage matching network circuit may be adjusted.

[0015] A second aspect of the present application provides a radio frequency power amplifier, which includes an inter-stage matching network circuit as described in the first aspect and any possible implementation of the first aspect.

[0016] A third aspect of the present application provides a communication device, which includes a radio frequency power amplifier as described in the second aspect.

[0017] It can be seen from the above technical solutions that the embodiments of the present application have the following advantages:

[0018] The interstage matching network circuit includes: a first bonding wire, a second bonding wire, a driver-stage amplifier, a final-stage amplifier, and a first capacitor; the first stage of the first capacitor is connected to the driver-stage amplifier; the second stage of the first capacitor is connected to the final-stage amplifier; the first bonding wire is connected to the first stage of the first capacitor; the second bonding wire is connected to the second stage of the first capacitor; and the first and second bonding wires are used to tune the total inductance of the interstage matching network circuit. Because there is a certain space between the first and second bonding wires and the substrate on which the interstage matching network circuit is integrated, the loss of electromagnetic waves in air is minimized, thus avoiding the problem of electromagnetic wave loss caused by the substrate. This reduces inductance loss and increases the gain amplitude of the radio frequency power amplifier using the interstage matching network circuit. A communication device using the radio frequency power amplifier achieves maximum peak power output while reducing power consumption. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 A schematic diagram of the structure of a multi-stage power amplifier involved in an embodiment of the present application;

[0020] Figure 2 A schematic diagram of an inter-stage matching network circuit embodiment proposed in an embodiment of the present application;

[0021] Figure 3 A schematic diagram of another inter-stage matching network circuit embodiment proposed in an embodiment of the present application;

[0022] Figure 4a A schematic diagram of another inter-stage matching network circuit embodiment proposed in an embodiment of the present application;

[0023] Figure 4b A schematic diagram of a simulation experiment proposed in an embodiment of the present application;

[0024] Figure 5 A schematic diagram of a circuit connection structure proposed in an embodiment of the present application;

[0025] Figure 6 This is another schematic diagram of a circuit connection structure proposed in an embodiment of the present application;

[0026] Figure 7 This is a circuit connection diagram of the radio frequency power amplifier proposed in an embodiment of the present application;

[0027] Figure 8 A schematic diagram of an inductor layout of a radio frequency power amplifier is provided for an embodiment of the present application;

[0028] Figure 9 Another schematic diagram of simulation results proposed in an embodiment of the present application;

[0029] Figure 10 This is another schematic diagram of simulation results proposed in an embodiment of the present application. DETAILED DESCRIPTION

[0030] The embodiment of the present application provides an interstage matching network circuit and a radio frequency power amplifier. The interstage matching network circuit uses a first bonding wire and a second bonding wire to tune the total inductance value of the interstage matching network circuit. Since there is a certain space between the first bonding wire, the second bonding wire and the substrate on which the interstage matching network circuit is integrated, and the loss of electromagnetic waves in the air is minimal, the problem of electromagnetic wave loss caused by the substrate is avoided. In order to reduce the loss of inductance, for the radio frequency power amplifier using the interstage matching network circuit, the gain amplitude of the radio frequency power amplifier is increased. The communication device using the radio frequency power amplifier achieves the maximum peak power of the final output under the premise of lower power consumption.

[0031] The embodiments of the present application are described below in conjunction with the accompanying drawings. Those skilled in the art will appreciate that, with the development of technology and the emergence of new scenarios, the technical solutions provided in the embodiments of the present application are also applicable to similar technical problems.

[0032] The terms "first", "second", etc. in the specification and claims of this application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the terms used in this way can be interchanged under appropriate circumstances. This is merely a way of distinguishing when describing objects with the same properties in the embodiments of the present application. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, so that a process, method, system, product or apparatus that includes a series of units is not necessarily limited to those units, but may include other units not expressly listed or inherent to these processes, methods, products or apparatuses.

[0033] First, let’s introduce some concepts involved in this application:

[0034] (1) Inter-stage matching network.

[0035] For an amplifier circuit with more than one cascaded amplifier, it is usually necessary to include an input matching network and an output matching network, as well as an inter-stage matching network between the multiple amplifier stages (also called an inter-stage matching network circuit). The inter-stage matching network includes an LC matching network composed of a series capacitor (inductor, L) and a parallel inductor (capacitance, C). For ease of understanding, please refer to Figure 1 , Figure 1This is a schematic diagram of the structure of a multi-stage power amplifier according to an embodiment of the present application. The "PA-1" amplifier serves as the driver-stage amplifier of the "ISMN" interstage matching network, and the "PA-2" amplifier serves as the final-stage amplifier of the "ISMN" interstage matching network. After the signal output by the "PA-1" amplifier is processed by the interstage matching network, the power range (voltage and current) of the output signal successfully matches the input signal requirements of the "PA-2" amplifier, allowing the "PA-2" amplifier to successfully receive the signal output by the "PA-1" amplifier.

[0036] In radio frequency power amplifiers, inter-stage matching networks are typically integrated on an LDMOS substrate. The following uses the LDMOS substrate as an example to describe the shortcomings of existing technologies.

[0037] At low frequencies, inductor performance is primarily determined by the characteristics of the metal wires forming the inductor (primarily metal losses). At high frequencies, substrate losses become the primary factor in determining inductor performance. The substrate's influence on inductor performance stems primarily from its capacitance per unit area, CSub, and conductivity per unit area, GSub. The doping characteristics of the substrate material are the primary factor influencing the magnitude of CSub and GSub. At the same frequency, the penetration depth of electromagnetic waves into the substrate increases with increasing substrate conductivity. This change is more pronounced at higher conductivity levels, resulting in increased high-frequency substrate losses. This is the primary reason why the quality factor is lower at higher frequencies when conductivity is high.

[0038] Since RF power amplifiers commonly operate in the 1-3 Gigahertz (GHz) RF frequency band, the inductor integrated on the LDMOS substrate suffers significant losses at these frequencies, with the quality factor (Q factor) typically being less than 10. As the operating frequency increases, the inductor's losses further deteriorate. The quality factor (Q factor = energy stored / energy consumed) characterizes the signal loss through the component. A lower Q factor indicates greater loss, while a higher Q factor indicates less loss. The inductor integrated on the LDMOS substrate often experiences strong electromagnetic coupling with the doped layer at the bottom of the LDMOS substrate, making it behave like a high parasitic capacitance component, which also affects the performance of the RF power amplifier. The output signal power of the driver amplifier must be increased to effectively compensate for the inductor losses in the interstage matching network circuit, resulting in a decrease in the power-added efficiency (PAE) of the RF power amplifier. This reduces the gain of the RF power amplifier, requiring higher power consumption in communications devices using such RF power amplifiers to achieve their maximum peak output power.

[0039] Based on the above technical defects, the present application proposes an inter-stage matching network circuit and a radio frequency power amplifier, which are introduced below with reference to the accompanying drawings.

[0040] See also Figure 2 , Figure 2 The inter-stage matching network circuit 20 of the present invention includes a first bonding wire 201 , a second bonding wire 202 , a first capacitor 203 , a driver amplifier 204 , and a final amplifier 205 .

[0041] The first bonding wire 201 is connected to the first stage of the first capacitor 203 , the second bonding wire 202 is connected to the second stage of the first capacitor 203 , the driving stage amplifier 204 is connected to the first stage of the first capacitor 203 , and the final stage amplifier 205 is connected to the second stage of the first capacitor 203 .

[0042] The first bonding wire 201 and the second bonding wire 202 are used to tune the total inductance of the inter-stage matching network circuit. The first bonding wire 201 provides a drain voltage for the driver stage amplifier 204, and the second bonding wire 202 provides a gate voltage for the final stage amplifier 205.

[0043] The first bonding wire 201 and the second bonding wire 202 serve as impedance transformers of the inter-stage matching network circuit. In addition to being used to tune the total inductance of the inter-stage matching network circuit, due to the characteristics of the bonding wires themselves, they can also be used to interconnect the chip and the package.

[0044] The first bonding wire 201 and the first capacitor 203, and the second bonding wire 202 and the first capacitor 203 can be connected by bonding. Bonding is a wire bonding method in the chip production process. It is generally used to connect the internal circuit of the chip to the package pins or the gold-plated copper foil of the circuit board using bonding wires (usually gold wires or aluminum wires) before packaging. Ultrasonic waves (usually 40-140 kHz) from an ultrasonic generator generate high-frequency vibrations through the transducer and are transmitted to the splitter through the horn. When the splitter contacts the leads and the workpiece to be welded, the pressure and vibration cause the metal surfaces to rub against each other, destroying the oxide film and causing plastic deformation. This causes the two pure metal surfaces to come into close contact, achieving atomic-level bonding and ultimately forming a strong mechanical connection.

[0045] The total inductance of the inter-stage matching network circuit 20 is determined by the height between the first bond wire 201 and the substrate, the height between the second bond wire 202 and the substrate, the span of the first bond wire 201, and / or the span of the second bond wire 202. The height is the vertical distance between the top of the bond wire (first bond wire 201 or second bond wire 202) and the substrate. The span of the bond wire (first bond wire 201 or second bond wire 202) is the distance between the two ends of the bond wire (first bond wire 201 or second bond wire 202).

[0046] The substrate may be made of silicon-based gallium nitride, or a laterally diffused metal oxide semiconductor. It should be noted that the material of the substrate is not limited here.

[0047] The first capacitor 203 is a DC blocking capacitor for isolating the drain voltage of the driver stage amplifier 204 and the gate voltage of the final amplifier 205. The drain voltage of the driver stage amplifier 204 is generally 28-50 volts, and the gate voltage of the final amplifier 205 is generally 1-3 volts. The first capacitor 203 can use a flat plate capacitor (metal plate capacitor) integrated on the substrate. When the inter-stage matching network circuit is applied to the radio frequency power amplifier, the first capacitor 203 behaves as an open circuit at a direct current frequency (Direct Current), and the first capacitor 203 does not behave as a short circuit at the radio frequency operating frequency band. In the radio frequency power amplifier, the common range of the radio frequency operating frequency band is 1G-6Ghz. Optionally, the quality factor of the first capacitor 203 is greater than 80 to provide lower loss.

[0048] In the embodiments of the present application, due to the presence of a certain amount of space between the first and second bond wires and the substrate on which the inter-stage matching network circuit is integrated, electromagnetic wave loss in air is minimized, thus avoiding the problem of electromagnetic wave loss caused by the substrate. This effectively improves the quality factor of the first and second bond wires when used as inductors.

[0049] For further information, see Figure 3 , Figure 3 This is a schematic diagram of another embodiment of an interstage matching network circuit proposed in an embodiment of the present application. The interstage matching network circuit proposed in an embodiment of the present application may also include: a second capacitor 206 and a third capacitor 207, wherein the first bonding wire 201 is connected to the second capacitor 206, and the second bonding wire 202 is connected to the third capacitor 207. The second capacitor 206 and the third capacitor 207 are decoupling capacitors. Decoupling (also known as decoupling) capacitors are used to filter out interference from the output signal.

[0050] In the embodiment of the present application, since the first bonding wire and the second bonding wire are connected to the second capacitor and the third capacitor respectively, the second capacitor and the third capacitor serve as decoupling capacitors, effectively reducing the noise of the signal transmitted from the driving stage amplifier to the final stage amplifier.

[0051] For further information, see Figure 4a , Figure 4a This is a schematic diagram of another embodiment of an inter-stage matching network circuit proposed in an embodiment of the present application. The inter-stage matching network circuit proposed in an embodiment of the present application may further include: a first resistor 208 .

[0052] One end of the second bonding wire 202 is connected to the third capacitor 207, and the other end of the second bonding wire 202 is connected to the first resistor 208. The second bonding wire 202 is connected to the second stage of the first capacitor 203 through the first resistor 208. The RF operating frequency band of the inter-stage matching network circuit 20 changes based on changes in the resistance of the first resistor 208 and the total inductance of the inter-stage matching network circuit 20.

[0053] In an optional implementation, the first resistor 208 can be an adjustable resistor (Rheostat). By changing the group value of the first resistor 208 and changing the height or span of the first bonding wire 201 and / or the height or span of the second bonding wire 202 (to achieve a change in the total inductance value of the inter-stage matching network circuit 20), the RF operating frequency band of the inter-stage matching network circuit (or the RF power amplifier using the inter-stage matching network circuit) can be changed.

[0054] For easier understanding, see Figure 4b , Figure 4b A schematic diagram of a simulation experiment proposed in an embodiment of the present application. Figure 4b There are three groups of curves, namely "(1)", "(2)" and "(3)", among which "(1)" is a gain-RF operating frequency band curve of the RF power amplifier using the inter-stage matching network circuit proposed in this application. When the height and span of the bonding wires (the first bonding wire 201 and the second bonding wire 202) are reduced by 30% and the resistance value of the first resistor 208 is reduced by 10%, the "(3)" curve is obtained. Specifically, the operating frequency band of the RF power amplifier moves rightward from 1.7G-2.5Ghz corresponding to the "(1)" curve to 1.75G-2.7Ghz. When the height and span of the bonding wires (the first bonding wire 201 and the second bonding wire 202) are increased by 30% and the resistance value of the first resistor 208 is increased by 10%, the "(2)" curve is obtained. Specifically, the operating frequency band of the RF power amplifier moves rightward from 1.7G-2.5Ghz corresponding to the curve "(1)" to 1.4G-2.5Ghz. It should be noted that Figure 4b This is only an illustration of a possible simulation result, and no specific simulation result is limited here.

[0055] The resistance value of the first resistor 208 can be adjusted based on instructions when the RF power amplifier using the inter-stage matching network circuit 20 is working; or it can be selected as the first resistor 208 by resistors of different resistance values based on actual user needs when manufacturing the RF power amplifier. This is not limited here.

[0056] In an embodiment of the present application, the interstage matching network circuit may further include a first resistor. This first resistor may be integrated into the substrate of the interstage matching network circuit or placed on the package of the RF power amplifier incorporating the interstage matching network circuit. By varying the resistance value of the first resistor and the total inductance of the interstage matching network circuit, the RF operating frequency band of the interstage matching network circuit may be adjusted. This increases the scope of application of the interstage matching network circuit.

[0057] Based on the above Figure 2-4b Based on the corresponding embodiment, please refer to Figure 5 , Figure 5 Schematic diagram of a circuit connection structure proposed in an embodiment of the present application. In the inter-stage matching network circuit 20, the connection structure of the first bonding wire 201, the second bonding wire 202 and the first capacitor 203 is as follows: Figure 5 shown.

[0058] For further information, see Figure 6 , Figure 6 This is another schematic diagram of a circuit connection structure proposed in the embodiment of the present application. Figure 5 On the basis of, in the inter-stage matching network circuit 20 , the second bonding wire 202 is connected to the first capacitor 203 through the first resistor 208 .

[0059] and Figure 6 The interstage matching network shown is used in a radio frequency power amplifier. The circuit connection diagram of the radio frequency power amplifier can be found in Figure 7 . Figure 7 In the embodiment, the RF power amplifier includes an input matching network, a driver stage amplifier 204, an inter-stage matching network, a final stage amplifier 205 and an output matching network, wherein the inter-stage matching network specifically includes a first bonding wire 201, a second bonding wire 202, a first resistor 208 and a first capacitor 203.

[0060] For ease of understanding, Figure 7 Based on the Figure 8 , Figure 8 The present invention provides an inductor layout diagram of a radio frequency power amplifier. The driver stage amplifier 204, the first capacitor 203, the first resistor 208 and the final stage amplifier 205 are integrated on a substrate, which may be an LDMOS substrate.

[0061] The input port of the RF power amplifier is set on the metal plate ( Figure 8 The input port is connected to the driver stage amplifier 204 through a metal plate and bonding wires.

[0062] The driver stage amplifier 204 is connected to the first electrode of the first capacitor 203 . One end of the first bonding wire 201 is connected to the first electrode of the first capacitor 203 , and the other end of the first bonding wire 201 is connected to the metal plate provided with the second capacitor 206 .

[0063] The second electrode of the first capacitor 203 is connected to one end of the first resistor 208, and the other end of the first resistor 208 is connected to the second bonding wire 202. The other end of the second bonding wire 202 is connected to the metal plate provided with the third capacitor 207.

[0064] The second electrode of the first capacitor 203 is connected to the final amplifier 205 , and the other end of the final amplifier 205 is connected to a metal plate provided with an output port through a bonding wire.

[0065] Below is taken as an example that a signal (for example, a first signal) enters the RF power amplifier process from an input port. After the first signal of input is input to the driver stage amplifier 204 through a bonding wire, due to the presence of a gate finger and a leakage finger (finger) structure (the final amplifier 205 is similar to the driver stage amplifier 204) in the driver stage amplifier 204, the first signal can be amplified. The amplified first signal (i.e., the signal output by the driver stage amplifier 204) is smoothly input to the final amplifier 205, so the amplified first signal needs to be processed by an inter-stage matching network. Specific processing procedure is as follows: the first bonding wire 201 and the second bonding wire 202 connected in parallel to the first capacitor 203, as a parallel inductor, participate in impedance conversion matching together with the first capacitor 203. For example, the amplified first signal has a power of 50 watts (50 volts / 1 amp) at the first terminal of first capacitor 203 (before entering the interstage matching network). After processing by the interstage matching network, the power of the signal at the second terminal of first capacitor 203 (after processing by the interstage matching network) is 50 watts (5 volts / 10 amps), which can be matched with final amplifier 205. Final amplifier 205 receives and amplifies the signal, and outputs it from the output port via the bonding wire. Second capacitor 206 and third capacitor 207 filter the noise in the first signal.

[0066] It should be noted that the RF power amplifier proposed in this application can be an LDMOS power amplifier, or a silicon-based gallium nitride cascade power amplifier or other RF power amplifiers of all communication standards, which is not limited here.

[0067] In the embodiment of the present application, the RF power amplifier proposed in the present application increases the gain of the RF power amplifier compared to the amplifier in the prior art. Figure 9 , Figure 9 This is another schematic diagram of simulation results proposed in an embodiment of the present application. Figure 9This is a graph showing the gain-RF operating frequency band of an RF power amplifier. The triangle curve group corresponds to an RF power amplifier that uses the inter-stage matching network circuit proposed in this application, and the square curve group corresponds to an RF power amplifier in the prior art. It can be seen that within the RF operating frequency band of the RF power amplifier (1.7 GHz to 2.5 GHz), the RF power amplifier proposed in this application has a 5-10 decibel (dB) improvement in gain. Please refer to Figure 10 , Figure 10 This is another schematic diagram of simulation results proposed in an embodiment of the present application. Figure 10 This is a diagram showing a power added efficiency-RF operating frequency band curve for a radio frequency power amplifier. The curve group corresponding to the triangle represents a radio frequency power amplifier that uses the inter-stage matching network circuit proposed in this application, and the curve group corresponding to the square represents a radio frequency power amplifier in the prior art. It can be seen that within the radio frequency operating frequency band of the radio frequency power amplifier (1.7 GHz to 2.5 GHz), the radio frequency power amplifier proposed in this application has a 5-10 percent improvement in power added efficiency. The radio frequency power amplifier that uses the inter-stage matching network circuit proposed in this application has achieved improvements in both gain amplitude and power added efficiency.

[0068] In an embodiment of the present application, a communication device is further provided. The communication device uses the radio frequency power amplifier provided in the aforementioned embodiment. The communication device using the radio frequency power amplifier achieves the maximum peak power output while lowering power consumption, effectively reducing the power consumption of the communication device.

[0069] It should be understood that “one embodiment” or “an embodiment” mentioned throughout the specification means that the specific features, structures or characteristics related to the embodiment are included in at least one embodiment of the present application. Therefore, “in one embodiment” or “in an embodiment” appearing throughout the specification does not necessarily refer to the same embodiment. In addition, these specific features, structures or characteristics can be combined in one or more embodiments in any suitable manner. It should be understood that in the various embodiments of the present application, the size of the sequence numbers of the above-mentioned processes does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0070] Additionally, the terms "system" and "network" are often used interchangeably. The term "and / or" is simply used to describe a relationship between related objects, indicating that three possible relationships exist. For example, "A and / or B" can mean: A exists alone, A and B exist simultaneously, or B exists alone. Furthermore, the character " / " generally indicates an "or" relationship between the related objects.

[0071] It should be understood that in the embodiments of the present application, "B corresponding to A" means that B is associated with A and B can be determined based on A. However, it should also be understood that determining B based on A does not mean determining B based solely on A, but B can also be determined based on A and / or other information.

[0072] Those skilled in the art will appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, computer software, or a combination of the two. In order to clearly illustrate the interchangeability of hardware and software, the composition and steps of each example have been generally described in terms of function in the above description. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of this application.

[0073] Those skilled in the art will clearly understand that, for the convenience and brevity of description, the specific working processes of the systems, devices and units described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0074] In the several embodiments provided in this application, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. For example, the device embodiments described above are merely illustrative. For example, the division of modules is only a logical function division. In actual implementation, there may be other division methods, such as multiple modules or components can be combined or integrated into another system, or some features can be ignored or not executed. In addition, the mutual coupling or direct coupling or communication connection shown or discussed can be an indirect coupling or communication connection through some interfaces, devices or modules, or can be electrical, mechanical or other forms of connection.

[0075] Modules described as separate components may or may not be physically separate, and components displayed as modules may or may not be physical modules, that is, they may be located in one place or distributed across multiple network modules. Some or all of the modules may be selected according to actual needs to achieve the purpose of the embodiments of the present application.

[0076] In addition, the functional modules in the various embodiments of the present application may be integrated into a processing module, or each module may exist physically separately, or two or more modules may be integrated into a single module. The above-mentioned integrated modules may be implemented in the form of hardware or software functional modules.

[0077] In short, the above description is only a preferred embodiment of the technical solution of this application and is not intended to limit the scope of protection of this application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of this application shall be included in the scope of protection of this application.

[0078] The above is a detailed introduction to the inter-stage matching network circuit, RF power amplifier and components provided by the present application. Specific examples are used in this article to illustrate the specific implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea; at the same time, for general technical personnel in this field, based on the ideas of the present application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. An inter-stage matching network circuit, characterized in that: include: A first bonding wire, a second bonding wire, a first capacitor, a substrate, a driver stage amplifier, and a final stage amplifier; The first bonding wire is connected to the first stage of the first capacitor; The second bonding wire is connected to the second stage of the first capacitor; and the first stage of the first capacitor is connected to the driver stage amplifier, and the second stage of the first capacitor is connected to the final stage amplifier; the first bonding wire and the second bonding wire are used to tune the total inductance value of the inter-stage matching network circuit, and the total inductance value of the inter-stage matching network circuit is determined by the height between the first bonding wire and the substrate, the height between the second bonding wire and the substrate, the span of the first bonding wire and the span of the second bonding wire, wherein the height between the first bonding wire and the substrate is the vertical distance between the top end of the first bonding wire and the substrate, the height between the second bonding wire and the substrate is the vertical distance between the top end of the second bonding wire and the substrate, the span of the first bonding wire is the distance between the two ends of the first bonding wire, and the span of the second bonding wire is the distance between the two ends of the second bonding wire.

2. The inter-stage matching network circuit according to claim 1, characterized in that: The first bonding wire provides a drain voltage for the driver stage amplifier; The second bonding wire provides a gate voltage for the final amplifier.

3. The inter-stage matching network circuit according to claim 2, characterized in that: The first capacitor is used to isolate the drain voltage of the driver-stage amplifier from the gate voltage of the final-stage amplifier.

4. The inter-stage matching network circuit according to claim 3, characterized in that: The first capacitor behaves as an open circuit at a DC frequency, and does not behave as a short circuit at a radio frequency operating frequency band.

5. The inter-stage matching network circuit according to claim 4, characterized in that: The inter-stage matching network circuit further includes a second capacitor and a third capacitor; The first bonding wire is connected to the second capacitor, and the second capacitor is a decoupling capacitor; The second bonding wire is connected to the third capacitor, and the third capacitor is a decoupling capacitor.

6. The inter-stage matching network circuit according to claim 5, characterized in that: The quality factor of the first capacitor is greater than 80.

7. The inter-stage matching network circuit according to claim 1, characterized in that: The substrate is silicon-based gallium nitride, or The substrate is a laterally diffused metal oxide semiconductor.

8. The inter-stage matching network circuit according to any one of claims 1 to 7, characterized in that: The inter-stage matching network circuit further includes a first resistor; The second bonding wire is connected to the second stage of the first capacitor through the first resistor, wherein the RF operating frequency band of the interstage matching network circuit changes based on the resistance change of the first resistor and the total inductance change of the interstage matching network circuit.

9. A radio frequency power amplifier, characterized in that: The radio frequency power amplifier includes the inter-stage matching network circuit according to any one of claims 1 to 8.

10. A communication device, characterized in that: The communication device includes the radio frequency power amplifier according to claim 9.

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