Check the equipment

Abstract

An inspection apparatus for inspecting an object such as a pellicle used in an EUV lithography apparatus, the inspection apparatus comprising: a vacuum chamber; a load lock forming an interface between the vacuum chamber and an ambient environment; a stage apparatus configured to receive the object from the load lock and to shift the object within the vacuum chamber; wherein the vacuum chamber comprises a first parking position and a second parking position for temporarily storing the object.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to European application No. 18202014.9 filed on October 23, 2018 and European application No. 19151427.2 filed on January 11, 2019, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present invention relates to an inspection tool or device such as can be used to inspect an object, in particular, the object is an object used in the manufacture of integrated circuits using EUV lithography equipment. In particular, the inspection tool or device can be used to inspect a pellicle used in EUV lithography equipment to protect a patterned mask from contamination. Background Art

[0004] A lithographic apparatus is a machine configured to apply a desired pattern to a substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). A lithographic apparatus can, for example, project a pattern at a patterning device (e.g., a mask) onto a layer of radiation-sensitive material (resist) disposed on a substrate.

[0005] To project a pattern onto a substrate, a lithographic apparatus may use electromagnetic radiation. The wavelength of this radiation determines the minimum size of features that can be formed on the substrate. A lithographic apparatus using extreme ultraviolet (EUV) radiation with a wavelength in the range of 4 to 20 nm (e.g., 6.7 nm or 13.5 nm) can be used to form smaller features on a substrate compared to a lithographic apparatus using radiation with a wavelength of, for example, 193 nm.

[0006] In the case of EUV lithography equipment, the patterning device as mentioned is usually protected by a pellicle.Before the pellicle is applied, the pellicle needs to undergo a verification or inspection process in order to assess whether it meets the specifications.

[0007] In known arrangements, this verification process can be quite time consuming and may not have the required accuracy. Summary of the invention

[0008] An object of the present invention is to provide an inspection apparatus for inspecting an object such as a pellicle, thereby reducing processing time and / or improving accuracy. According to a first aspect of the present invention, an inspection apparatus for inspecting an object such as a pellicle used in an EUV lithography apparatus is provided, the inspection apparatus comprising:

[0009] - vacuum chamber;

[0010] - a load lock forming an interface between the vacuum chamber and the surrounding environment;

[0011] - a stage device configured to receive the object from the load lock and to displace the object within the vacuum chamber;

[0012] The vacuum chamber comprises a first parking position and a second parking position for temporarily storing the object.

[0013] According to the first aspect of the present invention, there is also provided an inspection device for inspecting an object such as a pellicle used in an EUV lithography device, the inspection device comprising:

[0014] - vacuum chamber;

[0015] - a first load lock forming an interface between the vacuum chamber and the surrounding environment;

[0016] - a second load lock, which forms an interface between the vacuum chamber and the surrounding environment;

[0017] - a stage device configured to receive the object from the first load lock and displace the object within the vacuum chamber, and configured to provide the object to the second load lock.

[0018] According to a second aspect of the present invention, there is provided an inspection apparatus for inspecting an object such as a pellicle used in an EUV lithography apparatus, the inspection apparatus comprising:

[0019] - a chamber configured to be arranged in a conditioned atmosphere for inspecting the object;

[0020] - a load lock forming an interface between the chamber and the surrounding environment;

[0021] - a radiation beam source configured to generate a radiation beam for examining the object;

[0022] a radiation beam measurement system configured to measure a characteristic of the radiation beam, wherein the radiation beam measurement system comprises:

[0023] o a member arranged in an optical path of the radiation beam between a source of the radiation beam and the object, the member comprising an aperture allowing a portion of the radiation beam to propagate to the object, and

[0024] o At least one radiation sensor disposed on the member and configured to measure a characteristic of the radiation beam. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings, in which:

[0026] - Figure 1 Describing a lithographic system including a lithographic apparatus and a radiation source;

[0027] - FIG. 2A to FIG. 2F A first embodiment of an inspection device according to the first aspect of the invention is depicted.

[0028] - FIG. 3A to FIG. 3C A second embodiment of the inspection apparatus according to the first aspect of the invention is depicted.

[0029] - Figure 4 A radiation beam measurement system as may be applied in an inspection apparatus according to the invention is depicted.

[0030] - Figure 5 A further radiation beam measurement system as may be applied in an inspection apparatus according to the invention is depicted. DETAILED DESCRIPTION

[0031] Figure 1 A lithographic system is shown comprising a radiation source SO and a lithographic apparatus LA. The radiation source SO is configured to generate an EUV radiation beam B and to provide the EUV radiation beam B to the lithographic apparatus LA. The lithographic apparatus LA comprises an illumination system IL, a support structure MT configured to support a pattern device MA (e.g. a mask), a projection system PS and a substrate table WT configured to support a substrate W.

[0032] The illumination system IL is configured to condition the EUV radiation beam B before it is incident on the pattern forming device MA. The illumination system IL may include a faceted field mirror device 10 and a faceted pupil mirror device 11. The faceted field mirror device 10 and the faceted pupil mirror device 11 together provide a desired cross-sectional shape and a desired intensity distribution for the EUV radiation beam B. In addition to or instead of the faceted field mirror device 10 and the faceted pupil mirror device 11, the illumination system IL may include other mirrors or devices.

[0033] After being so conditioned, the EUV radiation beam B interacts with the pattern forming device MA. As a result of this interaction, a patterned EUV radiation beam B' is produced. The projection system PS is configured to project the patterned EUV radiation beam B' onto the substrate W. To this end, the projection system PS may include a plurality of mirrors 13, 14, which are configured to project the patterned EUV radiation beam B' onto the substrate W held by the substrate table WT. The projection system PS may apply a reduction factor to the patterned EUV radiation beam B' so as to form an image having features that are smaller than corresponding features on the pattern forming device MA. For example, a reduction factor of 4 or 8 may be applied. Although the projection system PS is Figure 1 13, 14, but the projection system PS may include a different number of mirrors (e.g., six or eight mirrors). The substrate W may include a previously formed pattern. In this case, the lithographic apparatus LA aligns the image formed by the patterned EUV radiation beam B' with the pattern previously formed on the substrate W.

[0034] A relative vacuum, ie a small amount of gas (eg hydrogen) at a pressure well below atmospheric pressure, may be provided in the radiation source SO, illumination system IL and / or projection system PS.

[0035] The radiation source SO may be a laser produced plasma (LPP) source, a discharge produced plasma (DPP) source, a free electron laser (FEL) or any other radiation source capable of generating EUV radiation.

[0036] The present invention relates to the manufacture of a device or a component for use in a device. The device may be a lithography device, such as an extreme ultraviolet (EUV) lithography device such as may be used to manufacture integrated circuit chips. The component may be, for example, a membrane or a diaphragm for use in the device.

[0037] During the production of components, it may be necessary to test the components to ensure that they meet certain criteria. Some tests can be performed in a specific environment such as a vacuum environment. This can be provided in a vacuum chamber. Of course, it should be understood that other processing, measurement or operation of the components can also be performed in the vacuum chamber. In order to maintain a vacuum environment in the vacuum chamber, an antechamber (also referred to as a loading lock) can be provided. Components can be inserted into the loading lock under ambient pressure. The loading lock is then sealed and air is pumped out until a vacuum condition matching the vacuum condition of the vacuum chamber prevails in the loading lock. The loading lock is then opened to the vacuum chamber and the components can then be moved from the loading lock to the vacuum chamber ready for performing a test or other process. When the components are to be removed from the vacuum chamber, the process is reversed. In other words, the components are transferred to the loading lock in a vacuum and the loading lock is closed and isolated from the vacuum chamber. The ambient pressure is then restored to the loading lock by pumping air into the space inside the loading lock. Once ambient pressure is reached, the loading lock can be opened and the components can be removed.

[0038] In the case of sensitive and / or delicate components (such as pellicles for EUV equipment), the pumping and venting time can be of the order of several hours in order to preserve the mechanical integrity of the component by maintaining a low pressure differential and to reduce the risk of contamination by keeping the gas flow rate low. This can be significantly longer than the time spent testing the component in the vacuum chamber, for example up to twice as long.

[0039] The present invention discloses two solutions to the above problems. In a first embodiment, the present invention provides an inspection apparatus for inspecting an object or component, such as a pellicle, for use in an EUV lithography apparatus.

[0040] According to a first embodiment, the inspection device comprises:

[0041] - vacuum chamber;

[0042] - a load lock forming an interface between the vacuum chamber and the surrounding environment;

[0043] - a stage device configured to receive a component from the load lock and to displace an object within the vacuum chamber.

[0044] Furthermore, according to a first embodiment, in order to reduce the total manufacturing and / or testing time, or more specifically, to increase the throughput of components, it is proposed to use a portion of the vacuum chamber for storing components so that a loading and / or unloading phase can be performed on a first component while a second component is being tested.

[0045] In particular, in an embodiment of the present invention, the vacuum chamber of the inspection device comprises a first parking position and a second parking position. According to the present invention, the parking position refers to a position or location where a component can be temporarily stored.

[0046] According to a first embodiment of the invention, it is thus proposed to provide two parking positions inside the vacuum chamber. As will be illustrated below, the application of two parking positions inside the vacuum chamber enables operation of the load lock when a first component is present inside the load lock, the operation for example comprising pumping air out of the load lock or pumping air into the load lock while the process (e.g. inspection of a second component arranged inside the vacuum chamber) is being carried out. FIG. 2A to FIG. 2F A possible sequence of such a process is further illustrated in FIG. FIG. 2A to FIG. 2F A plan view of an inspection apparatus 100 according to the invention is schematically shown. In the embodiment as shown, the inspection apparatus comprises a vacuum chamber 110, a load lock 120, a stage device 130, whereby the vacuum chamber 110 comprises two parking positions 140.1 and 140.2, also indicated as PP1 and PP2.

[0047] In an embodiment, a load lock such as a load lock 120 may be considered as an interface between a first atmosphere and a second atmosphere (e.g., between an ambient atmosphere or an ambient and a vacuum environment). Such a load lock may, for example, include a first door (dashed line) 120.1, a second door 120.2, and a load lock chamber 120.3, wherein the first door 120.1 is configured to separate the ambient environment from the load lock chamber 120.3, and the second door 120.2 is configured to separate the vacuum chamber 110 from the load lock chamber 120.3. Typically, the load lock chamber 120.3 should be large enough to accommodate a component, such as product A or product B.

[0048] Figure 2A The inspection apparatus 100 is shown during a first process step, wherein a first component (product A, such as a pellicle) undergoes measurement or inspection in the vacuum chamber, while a second component (product B) is loaded into the load lock. In the embodiment shown, the platform apparatus 130 comprises: an X-platform 130.1, the X-platform being configured to allow a product (i.e., a pellicle) mounted to the platform apparatus to be measured or inspected. Figure 2A The product A in the embodiment of the present invention is displaced in the X direction; and a Y platform, wherein the Y platform is configured to displace the product A in the Y direction.

[0049] The load lock is sealed off from the vacuum chamber; i.e., the door 120.2 is closed. After loading the product B into the load lock (particularly, the load lock chamber 120.3), the first door 120.1 may also be closed, and air may be pumped out of the load lock chamber 120.3. This process of pumping out air may be performed while measuring the product A.

[0050] exist Figure 2B In the second step shown in , the product A is moved to the first storage area (parking position 1, PP1, 140.1). In an embodiment, such a step may be performed, for example, by the platform device 130 (in particular, the X platform 130.1 and the Y platform 130.2). In an embodiment, the platform device 130 may, for example, include one or more linear motors, such as a linear motor that displaces the object (e.g., the film) along the X direction and a linear motor that displaces the object along the Y direction.

[0051] exist Figure 2C In the third step shown in , the load lock door 120 . 2 leading to the vacuum chamber 110 is opened, and product B is retrieved from the load lock 120 and moved into the vacuum chamber 110 , while product A remains in the first storage area 140 . 1 .

[0052] exist Figure 2D In the fourth step shown in , the product B is moved to the second storage area (parking position 2, PP2, 140.2). In the embodiment as shown, the load lock 120 comprises a transfer mechanism 150 configured to transfer objects from the load lock 120 to the platform device 130 and vice versa. It can be pointed out that such a transfer mechanism can also be positioned on the platform device or at other locations in the vacuum chamber 110. In an embodiment, the end portion 150.1 of the transfer mechanism can, for example, be configured to hold the object and to lift and / or lower the object.

[0053] exist Figure 2E In the fifth step shown in FIG. 1 , the product A is returned from the first storage area 140.1 to the load lock 120. In this regard, it can be pointed out that due to the use of two parking positions PP1 and PP2, this transfer can be performed by the platform device 130. In this way, due to the use of two parking positions, there is no need to install or use an additional transfer robot in the vacuum chamber.

[0054] Finally, in Figure 2FIn a sixth step shown in , the load lock 120 is sealed, ie the load lock door 120.2 is closed, and returned to ambient conditions while testing product B. Once the load lock 120 is returned to ambient conditions, product A can be unloaded.

[0055] By using the first and second storage areas within the vacuum chamber, it is possible to reduce the measurement cycle time by approximately 1 / 1.5, i.e., by (1.5-1) / 1.5. This is because, in particular, the second component can be loaded or unloaded while the first component is undergoing measurement. In such a configuration, the loading / unloading time of one component overlaps with the measurement process time of another component, thereby improving the throughput of components to be tested / measured and reducing the overall processing time.

[0056] According to a second embodiment of the first aspect of the invention, a second load lock may be used. In such a configuration, loading and unloading may occur simultaneously. For example, while measuring a first component, a second component may be unloaded after the aforementioned measurement and a third component may be loaded before a subsequent measurement. Using such a process may reduce the measurement cycle time by up to 1 / 2. This may also reduce the amount of manufacturing equipment and / or the clean room space required to manufacture the components, since throughput is significantly increased.

[0057] exist FIG. 3A to FIG. 3C A possible sequence of steps using a vacuum chamber with two load locks is illustrated in FIG. FIG. 3A to FIG. 3C A cross-sectional view in a vertical plane (XZ-plane) is schematically depicted.

[0058] Figure 3A An inspection apparatus 200 according to an embodiment of the present invention is shown. In the embodiment as shown, the inspection apparatus comprises a vacuum chamber 210 having two load locks 1 and 2 (also indicated by reference numerals 222 and 224). Three components (products A, B and C), for example objects such as pellicles used in EUV lithography equipment, are positioned in the vacuum chamber 210 and load locks 222 and 224. Load locks 222 and 224 may, for example, have a structure similar to the load lock 120, i.e. comprising a first door and a second door and a load lock chamber as described above. In the embodiment as shown, product A has been processed in the vacuum chamber 210 and has been moved to the load lock 224. The load lock 224 has been sealed and isolated from the vacuum chamber 210 and is being returned to environmental conditions ready for unloading product A. Product B has been loaded from the load lock 222 into the vacuum chamber 210 for processing. Load lock 222 has then been isolated from the vacuum chamber enclosure and returned to ambient conditions to enable product C to be loaded into load lock 1 . FIG. 3A to FIG. 3CFurther schematically shown is a stage device 230 arranged inside the vacuum chamber 210. In the embodiment as shown, the load locks 222 and 224 further comprise transfer mechanisms 252 and 254 for transferring objects from the load lock chamber to the vacuum chamber and vice versa.

[0059] Subsequently, the load lock 1, 222 containing the product C can be brought from ambient pressure to vacuum conditions while the product B is measured and / or processed in the vacuum chamber. Subsequently, the product A is unloaded from the load lock 2, 224, which is then returned to vacuum conditions ready to receive the product B. The door 224.2 separating the load lock 224 from the vacuum chamber 210 is then opened and after completion of the measurement process, the product B is transferred to the load lock 224. Figure 3B The figure shows this situation.

[0060] At the same time, the load lock 222 continues to be brought to vacuum conditions to allow the transfer of product C to the vacuum chamber.

[0061] Once the load lock 222 has been brought to vacuum conditions, the door 222.2 separating the load lock 222 from the vacuum chamber 210 is opened and the product C is transferred to said vacuum chamber 210. At the same time, the load lock 224 is sealed off from the vacuum chamber 210 and can be vented to ambient pressure, so that the product B can be unloaded. Finally, the measurement and / or processing of the product C can be carried out while the next component is loaded into the load lock 222. These steps are described in detail in detail below. Figure 3C It is schematically shown in FIG.

[0062] According to the invention, the inspection device may also include a radiation source for inspecting the object and a detector for receiving radiation emitted, reflected or transmitted from the object in order to perform an inspection or quality assessment process. In the meaning of the invention, such a radiation source may include any suitable form of radiation, such as electromagnetic radiation or a particle beam such as an electron beam or an ion beam.

[0063] According to a second aspect of the present invention, there is provided an inspection apparatus for inspecting an object such as a pellicle.

[0064] Some lithographic apparatus include a pellicle attached to a patterned reticle. The pellicle is a transmissive film that is spaced a few millimeters from the pattern of the reticle. Contaminant particles received on the pellicle are in the far field relative to the pattern of the reticle and therefore have no significant effect on the quality of the image projected by the lithographic apparatus onto the substrate. If the pellicle is not present, contaminant particles may be on the pattern of the reticle and therefore may obscure a portion of the pattern, thereby preventing the pattern from being properly projected onto the substrate.

[0065] An inspection apparatus, also referred to as a pellicle verification system, may be configured to determine optical properties of the pellicle, such as reflectivity and / or transmittance, in order to determine whether the pellicle is of sufficiently high quality to be used in a lithographic apparatus. Such a pellicle verification or inspection may involve directing a measurement radiation beam towards the pellicle and using a radiation sensor to detect the intensity of the measurement radiation beam before it interacts with the pellicle and after it has interacted with the pellicle. This enables a comparison of the characteristics of the measurement radiation beam before it interacts with the pellicle and after it has interacted with the pellicle, thereby enabling a determination of how the pellicle affects the measurement radiation beam and whether the pellicle is of sufficiently high quality to be used in a lithographic apparatus.

[0066] A known pellicle checking system uses two radiation sensors to detect the intensity of the measurement radiation beam before it has interacted with the pellicle. A first portion of the measurement radiation beam is guided along a main measurement path, where the measurement radiation beam interacts with the pellicle. A second portion of the measurement radiation beam is directed to the radiation sensor. Thus, the two radiation sensors are positioned on different optical paths and / or receive incident radiation at different angles to the main measurement path. The optical paths may be different from each other. The differences between different optical paths may change over time. For example, optical components (e.g., lenses and / or mirrors) in different optical paths may degrade differently, temperature and subsequent thermal deformation may change vacuum or gas changes in the optical paths, etc. Due to the different optical paths, there are random differences between the first and second portions of the measurement radiation beam and thereby reduce the accuracy of the known pellicle checking system. Known methods of improving the accuracy of known pellicle checking systems involve the use of beam splitters and / or grazing incidence mirrors. However, such optical components reduce the intensity of the radiation, which in turn adversely affects the accuracy of the system. The inspection apparatus according to the second aspect of the invention provides an alternative way of measuring a radiation beam as applied to inspect or check a pellicle.

[0067] Figure 4 Schematically showing a top view of a novel radiation beam measurement system (also referred to as a pellicle checking system) as applied in an inspection apparatus according to a second aspect of the present invention ( Figure 4 Left side) and side view ( Figure 4 on the right side of the screen).

[0068] The inspection device according to the second aspect of the present invention may for example comprise:

[0069] - a chamber configured to be arranged in a conditioned atmosphere for inspecting the object;

[0070] - a load lock forming an interface between the chamber and the surrounding environment;

[0071] - a radiation beam source configured to generate a radiation beam for examining the object;

[0072] - a radiation beam measurement system configured to measure a characteristic of the radiation beam.

[0073] In an embodiment, the conditioned atmosphere may be, for example, a vacuum environment. Other types of conditioned atmospheres or environments may also be considered, depending on the type of radiation used for inspection or verification.

[0074] Within the meaning of the present invention, any suitable type of radiation may be used as source of the radiation beam for the inspection or verification of the pellicle.

[0075] According to a second aspect of the present invention, the radiation beam measurement system as applied to the inspection device or the surface film inspection system further comprises:

[0076] a member arranged in an optical path of the radiation beam between the radiation beam source and the object, the member comprising an aperture allowing a portion of the radiation beam to propagate to the object, and

[0077] - at least one radiation sensor arranged on the member and configured to measure a property of the radiation beam.

[0078] In an embodiment, the radiation beam measurement system comprises a plurality of radiation sensors (e.g. four or eight radiation sensors) arranged on a member arranged in the optical path of the radiation beam between the radiation beam source and the object, i.e. downstream of the radiation beam source and upstream of the object. Figure 4 In the example of FIG. 4 , the member 400 of the radiation beam measurement system is equipped with eight radiation sensors, referenced 1 to 8. In the embodiment as shown, the member 400 comprises a substantially rectangular aperture 410. The eight radiation sensors 1 to 8 are arranged on or along two opposite sides of the aperture 410. Figure 4 , reference numeral 412 refers to the width of the radiation beam after passing through the aperture 410, and reference numeral 414 refers to the width of the radiation beam incident on the member 400. In an embodiment, the radiation beam measurement system includes at least one radiation sensor configured to measure a property, such as the intensity of the radiation beam (i.e., the incident radiation beam as depicted).

[0079] The use of a larger number of radiation sensors may be preferred because any noise present in the measurements performed by the radiation beam measurement system may be reduced by averaging the results of the measurements performed by each radiation sensor. The radiation sensors may be configured to detect EUV radiation. The radiation sensors may, for example, comprise photodiodes and / or cameras, such as charge coupled devices. The radiation beam measurement system may be configured to determine the spatial intensity distribution of an incident radiation beam. The radiation sensors may detect the measurement radiation beam close to a central axis of the optical path of the radiation beam to be measured.

[0080] In an embodiment, the inspection system or pellicle verification system may include a spectral purity filter (SPF) 422 and a detector 430, such as a charge coupled device (CCD). In the embodiment as shown, the detector 430 is arranged downstream of the object (i.e. the pellicle 440 to be inspected or verified). In such an embodiment, the detector thus receives radiation transmitted through the object 440. In general, the inspection device according to the second aspect of the invention may be configured to receive any type of radiation caused by the interaction of the radiation beam with the object 440. Such radiation may, for example, include radiation emitted by the object, or radiation reflected by the object, or radiation transmitted by or through the object.

[0081] The spectral purity filter 422 may be configured to filter the incident radiation beam 450 before the radiation beam 450 is incident on the pellicle 440. Thus, the SPF 422 may be arranged upstream of the pellicle 440. The CCD, typically the detector 430, may be arranged to detect the radiation beam 450 after it has interacted with the pellicle 440. The radiation sensors 1 to 8 of the radiation beam measurement system may be configured such that the radiation beam 450 is detected after it has interacted with the spectral purity filter 422 and before it has interacted with the CCD 430. A comparison between the measurements performed by the radiation beam measurement system and the measurements performed by the CCD of the pellicle check system may be used to determine what effect the pellicle 440 has on the radiation beam, and thereby determine whether the pellicle 440 is suitable for use in a lithographic apparatus.

[0082] The spectral purity filter 422 may be held in place by a support. In the embodiment shown, the spectral purity filter 422 is mounted to the member 400 via the support 420. In the embodiment shown, the member 400 includes a hole 410 through which at least a portion of the radiation beam (which may be referred to as the first portion of the radiation beam) passes before the radiation beam is incident on the pellicle. The radiation sensors 1 to 8 of the radiation beam measurement system may be mounted on the member 400. The edges of the radiation sensors may be roughly aligned with the edges of the holes of the member 400. The surface of the member 400 on which the radiation beam measurement system is mounted and the radiation sensors of the radiation beam measurement system are used to block some of the incident radiation beam 450 (which may be referred to as the second portion of the incident radiation beam). Because the edge of the radiation sensor is substantially aligned with the edge of the hole 410 of the member 400, the radiation beam measurement system is able to measure the characteristics of the radiation beam 450 as close to the central axis of the radiation beam as possible without affecting the portion of the radiation beam that interacts with the pellicle (and which can be detected by the CCD 430 of the inspection device or pellicle verification system). The radiation beam measurement system can be the final optical component that interacts with the radiation beam before it is incident on the pellicle 440. Thus, the effects of all other optical components in the optical path of the radiation beam are included and accounted for in the measurements performed by the radiation beam measurement system. Thus, changes in the optical path of the radiation beam have less impact on the accuracy of the novel radiation beam measurement system than known radiation beam measurement systems.

[0083] The radiation beam measurement system is advantageously capable of monitoring the characteristics (e.g., energy, spatial intensity distribution, dose, etc.) of the incident radiation beam in situ without significantly affecting the radiation beam. This can improve the accuracy of subsequent measurements performed using the radiation beam after the radiation beam has interacted with the pellicle. The radiation beam measurement system allows for setup calibration using CCD 430 as a reference. For example, when the pellicle 440 is not disposed between the support and the CCD 430, both the radiation sensors 1 to 8 and the CCD 430 of the radiation beam measurement system can be used to determine the characteristics of the incident radiation beam 450. The direct measurement results of the CCD 430 from the first portion of the radiation beam can be used to calibrate the indirect measurement results of the radiation sensors 1 to 8 from the radiation beam measurement system. The radiation beam measurement system is compact and easy to install and use. The radiation beam measurement system can be capable of reconstructing the spatial intensity distribution of the radiation by, for example, using a combination of known positions of the radiation sensors, performing reference measurements, comparing the measurements with a database of information about the characteristics of the radiation beam, and a fitting algorithm. The radiation beam measurement system may be cheaper to install and / or operate than known radiation beam measurement systems.

[0084] In such Figure 4 In the embodiment shown in FIG. 4 , the radiation sensors 1 to 8 are arranged along two opposite sides of the hole 410, the opposite sides extending in the Y direction. It may also be advantageous to include or arrange radiation sensors along one or both sides extending in the X direction. Such an embodiment is schematically shown in FIG. Figure 5 In. Except Figure 4 In addition to the features shown in Figure 5 A further pair of radiation sensors 20, 21 is schematically shown, which are arranged on or along two opposite sides of an aperture 410 extending in the X-direction.

[0085] In an embodiment of the invention, at least one radiation sensor is arranged along the circumference of the aperture 410 of the member 400 of the radiation beam measurement system. In an embodiment, at least one radiation sensor is arranged along each side of the aperture 410 of the member 400.

[0086] In an embodiment, the inspection apparatus according to the present invention may advantageously be used to measure the transmission and / or reflection properties of an object such as a pellicle (particularly an EUV pellicle). In such an embodiment, the inspection apparatus may thus be referred to as an EUV pellicle transmission and / or reflection measurement tool. In such an embodiment, one or two properties as measured in such a tool are:

[0087] a) the transmittance of EUV radiation through the membrane or pellicle, i.e. the percentage of EUV radiation (i.e. EUV radiation that is transmitted through without being absorbed by the membrane or pellicle and / or reflected by the membrane) relative to the total radiation, and / or

[0088] b) EUV radiation reflected by the membrane or pellicle, ie the percentage of EUV radiation reflected back by the membrane or pellicle.

[0089] It may also be noted that a portion of the EUV radiation may be absorbed by the membrane or pellicle. By measuring both the reflected and transmitted EUV radiation, combined with information about the total EUV radiation towards the membrane or pellicle, the relationship between the three radiation components (i.e., reflected radiation component, absorbed radiation component, and transmitted radiation component) may be determined. The reflection and transmission properties may be measured, for example, using a radiation detector, such as a CCD camera, such as CCD430 as shown above. In particular, as Figure 4 and Figure 5 As shown in , a CCD camera can be arranged in the optical path of the transmitted EUV radiation. Similarly, in order to determine the amount of reflected EUV radiation, a CCD camera can be arranged in the optical path of the reflected EUV radiation. Such cameras can be referred to as T-CCD (transmission) and R-CCD (reflection), for example.

[0090] The present invention can also be described by the following aspects:

[0091] Aspect 1: An inspection device for inspecting an object such as a pellicle used in an EUV lithography device, the inspection device comprising:

[0092] - vacuum chamber;

[0093] - a load lock forming an interface between the vacuum chamber and the surrounding environment;

[0094] - a stage device configured to receive the object from the load lock and to displace the object within the vacuum chamber;

[0095] The vacuum chamber comprises a first parking position and a second parking position for temporarily storing the object.

[0096] Aspect 2: The inspection equipment according to aspect 1, further comprising a transfer mechanism configured to transfer the object from the load lock to the platform equipment and to transfer the object from the platform equipment to the load lock.

[0097] Aspect 3: The inspection apparatus according to aspect 2, wherein the transfer mechanism is at least partially arranged within the load lock.

[0098] Aspect 4: The inspection apparatus according to aspect 2, wherein the transfer mechanism is mounted to the platform apparatus.

[0099] Aspect 5: An inspection device according to any one of the preceding aspects, wherein the load lock comprises a first door, a second door and a load lock chamber, the first door being configured to separate the surrounding environment from the load lock chamber, and the second door being configured to separate the vacuum chamber from the load lock chamber.

[0100] Aspect 6: Inspection equipment according to Aspect 1, wherein the platform device is configured to transfer an object from the platform device to the first parking position and transfer an object from the first parking position to the platform device, and wherein the platform device is configured to transfer an object from the platform device to the second parking position and transfer an object from the second parking position to the platform device.

[0101] Aspect 7: The inspection device according to any one of the preceding aspects, wherein the platform device includes a holder for holding the object.

[0102] Aspect 8: An inspection device for inspecting an object such as a pellicle used in an EUV lithography device, the inspection device comprising:

[0103] - vacuum chamber;

[0104] - a first load lock forming an interface between the vacuum chamber and the surrounding environment;

[0105] - a second load lock, which forms an interface between the vacuum chamber and the surrounding environment;

[0106] - a stage device configured to receive the object from the first load lock and displace the object within the vacuum chamber, and configured to provide the object to the second load lock.

[0107] Aspect 9: An inspection device for inspecting an object such as a pellicle used in an EUV lithography device, the inspection device comprising:

[0108] - a chamber configured to be arranged in a conditioned atmosphere for inspecting the object;

[0109] - a load lock forming an interface between the chamber and the surrounding environment;

[0110] - a radiation beam source configured to generate a radiation beam for examining the object;

[0111] a radiation beam measurement system configured to measure a characteristic of the radiation beam, wherein the radiation beam measurement system comprises:

[0112] o a member arranged in an optical path of the radiation beam between a source of the radiation beam and the object, the member comprising an aperture allowing a portion of the radiation beam to propagate to the object, and

[0113] o At least one radiation sensor disposed on the member and configured to measure a characteristic of the radiation beam.

[0114] Aspect 10: The inspection apparatus according to Aspect 9, wherein the at least one radiation sensor is arranged along a circumference of the hole.

[0115] Aspect 11: The inspection apparatus according to aspect 9 or 10, wherein the hole has a substantially rectangular shape.

[0116] Aspect 12: The inspection apparatus of aspect 11, wherein the radiation beam measurement system comprises radiation sensors along at least two sides of the aperture.

[0117] Aspect 13: The inspection apparatus of aspect 11 or 12, wherein the radiation beam measurement system comprises at least one radiation sensor along each side of the aperture.

[0118] Aspect 14: Inspection apparatus according to any one of aspects 9 to 13, wherein the radiation beam measurement system further comprises a spectral purity filter arranged upstream of the component in the optical path.

[0119] Aspect 15: The inspection apparatus according to Aspect 14, wherein the spectral purity filter is mounted to the member.

[0120] Aspect 16: Inspection apparatus according to Aspect 14 or 15, wherein the at least one radiation sensor is arranged downstream of the spectral purity filter.

[0121] Aspect 17: The inspection apparatus according to any one of aspects 9 to 16, further comprising a detector configured to receive radiation caused by the interaction of the radiation beam with the object.

[0122] Aspect 18: The inspection apparatus of aspect 17, wherein the radiation comprises radiation transmitted by the object.

[0123] Aspect 19: The inspection apparatus according to Aspect 18, wherein the detector is arranged downstream of the object.

[0124] Aspect 20: The inspection apparatus according to any one of Aspects 17 to 19, wherein the detector comprises a CCD.

[0125] Aspect 21: An EUV film transmission measurement tool, comprising the inspection device according to any one of Aspects 9 to 20.

[0126] Aspect 22: An EUV film transmission and reflection measurement tool comprising the inspection apparatus according to any one of aspects 9 to 20.

[0127] Although specific reference may be made herein to the use of lithographic equipment in IC manufacturing, it should be understood that the lithographic equipment described herein may have other applications. Possible other applications include manufacturing integrated optical systems, guidance and detection for magnetic domain memory, flat panel displays, liquid crystal displays (LCDs), thin film magnetic heads, and the like.

[0128] Although detailed reference can be made to the embodiments of the present application in the context of lithographic equipment herein, the embodiments of the present application can be used for other equipment. The embodiments of the present application can form a part of any equipment of mask inspection equipment, measurement equipment, or measuring or processing objects such as wafers (or other substrates) or masks (or other pattern forming devices). These equipments can be generally referred to as lithographic tools. Such lithographic tools can use vacuum conditions or environmental (non-vacuum) conditions.

[0129] Although detailed reference has been made to the use of embodiments of the present application in the context of optical lithography, it will be appreciated that the present application is not limited to optical lithography and may be used in other applications, such as imprint lithography, where the context permits.

[0130] Where context permits, embodiments of the present disclosure may be implemented in hardware, firmware, software, or any combination thereof. Embodiments of the present disclosure may also be implemented as instructions stored on a machine-readable medium, which may be read and executed by one or more processors. A machine-readable medium may include any mechanism for storing or transmitting information in a form that can be read by a machine (e.g., a computing device). For example, a machine-readable medium may include a read-only memory (ROM); a random access memory (RAM); a disk storage medium; an optical storage medium; a flash memory device; an electrical, optical, acoustic, or other form of propagation signal (e.g., a carrier wave, an infrared signal, a digital signal, etc.); and other media. In addition, firmware, software, routines, instructions may be described herein as performing certain actions. However, it should be understood that these descriptions are merely for convenience, and that these actions are actually caused by a computing device, a processor, a controller, or other devices that execute firmware, software, routines, instructions, etc., and that doing so may cause an actuator or other device to interact with the physical world.

[0131] Although specific embodiments of the present invention have been described above, it should be understood that the present invention can be practiced in a manner different from that described above. The above description is intended to be illustrative rather than restrictive. Therefore, it will be understood by those skilled in the art that the described invention can be modified without departing from the scope of the claims set forth below.

Claims

1. An inspection device for inspecting at least two objects used in an EUV lithography device, the inspection device comprising: - Vacuum chamber; - a load lock forming an interface between the vacuum chamber and the surrounding environment; - a stage device configured to receive only one of the at least two objects from the load lock and to displace the one object within the vacuum chamber to a position for inspection; wherein the vacuum chamber comprises a first parking position and a second parking position for temporarily storing the object; wherein the inspection apparatus is configured to load another of the at least two objects from the surrounding environment into the load lock or unload the another of the at least two objects from the vacuum chamber into the load lock while the one object is undergoing measurement; and The inspection device further includes a transfer mechanism configured to transfer the object from the load lock to the platform device and to transfer the object from the platform device to the load lock. 2 . The inspection apparatus of claim 1 , wherein the transfer mechanism is at least partially disposed within the load lock.

3. The inspection apparatus of claim 1, wherein the transfer mechanism is mounted to the platform apparatus.

4. The inspection apparatus according to any one of the preceding claims, wherein the load lock comprises a first door, a second door and a load lock chamber, the first door being configured to separate the ambient environment from the load lock chamber, and the second door being configured to separate the vacuum chamber from the load lock chamber.

5. The inspection device according to claim 1, wherein the platform device is configured to transfer an object from the platform device to the first parking position and transfer an object from the first parking position to the platform device, and wherein the platform device is configured to transfer an object from the platform device to the second parking position and transfer an object from the second parking position to the platform device.

6. The inspection apparatus according to claim 1, wherein the platform apparatus comprises a holder for holding the object.

7. An inspection device for inspecting at least three objects used in an EUV lithography device, the inspection device comprising: - Vacuum chamber; - a first load lock forming an interface between the vacuum chamber and the surrounding environment; - a second load lock forming an interface between the vacuum chamber and the surrounding environment; - a stage device configured to receive only one of the at least three objects from the first load lock and to displace the one object within the vacuum chamber to a position for inspection, and to provide the one object to the second load lock, wherein the inspection apparatus is configured to, while the one object is being measured, unload another object of the at least three objects that has been measured in a previous measurement from the vacuum chamber into the second load lock after the previous measurement, and load another object of the at least three objects to be measured in a subsequent measurement from the surrounding environment into the first load lock before the subsequent measurement; and The inspection equipment further comprises: a first transfer mechanism configured to transfer the object from the first load lock to the platform device and to transfer the object from the platform device to the first load lock; and A second transfer mechanism is configured to transfer the object from the second load lock to the platform device and to transfer the object from the platform device to the second load lock.

8. An inspection device for inspecting at least two objects used in an EUV lithography device, the inspection device comprising: - a vacuum chamber configured to be arranged in a conditioned atmosphere for inspecting the object; - a load lock forming an interface between the vacuum chamber and the surrounding environment; - a radiation beam source configured to generate a radiation beam for examining the object; - a radiation beam measurement system configured to measure a characteristic of the radiation beam, wherein the radiation beam measurement system comprises: a member arranged in an optical path of the radiation beam between a source of the radiation beam and the object, the member comprising an aperture allowing a portion of the radiation beam to propagate to the object, and at least one radiation sensor disposed on the member and configured to measure a characteristic of the radiation beam, and a stage apparatus configured to receive only one of the at least two objects from the load lock and to displace the one object within the vacuum chamber to a position for inspection, wherein the vacuum chamber comprises a first parking position and a second parking position for temporarily storing the object; wherein the inspection apparatus is configured to load another of the at least two objects from the surrounding environment into the load lock or unload the another of the at least two objects from the vacuum chamber into the load lock while the one object is being measured; and The inspection device further includes a transfer mechanism configured to transfer the object from the load lock to the platform device and to transfer the object from the platform device to the load lock.

9. The inspection apparatus of claim 8, wherein the at least one radiation sensor is arranged along a circumference of the aperture.

10. Inspection apparatus according to claim 8 or 9, wherein the hole has a substantially rectangular shape.

11. The inspection apparatus of claim 10, wherein the radiation beam measurement system comprises radiation sensors along at least two sides of the aperture.

12. The inspection apparatus of claim 10, wherein the radiation beam measurement system comprises at least one radiation sensor along each side of the aperture.

13. The inspection apparatus of claim 8, wherein the radiation beam measurement system further comprises a spectral purity filter arranged upstream of the component in the optical path.

14. The inspection apparatus of claim 13, wherein the spectral purity filter is mounted to the member.

15. Inspection apparatus according to claim 13 or 14, wherein the at least one radiation sensor is arranged downstream of the spectral purity filter.

16. The inspection apparatus of claim 8, further comprising a detector configured to receive radiation resulting from interaction of the radiation beam with the object.

17. The inspection apparatus of claim 16, wherein the radiation comprises radiation transmitted by the object.

18. Inspection apparatus according to claim 17, wherein the detector is arranged downstream of the object.

19. The inspection apparatus of claim 16, wherein the detector comprises a CCD.

20. An EUV pellicle transmission and / or reflection measurement tool comprising the inspection apparatus according to any one of claims 8 to 19, wherein the at least two objects comprise pellicles for use in an EUV lithography apparatus.

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