electronic devices

Abstract

The present invention provides an electronic device including a plurality of light emitting components and a first thin film transistor array. The first thin film transistor array is used to drive at least a portion of the plurality of light emitting components. The plurality of light emitting components and the first thin film transistor array are arranged on different substrates.

Description

Technical Field

[0001] The present invention relates to an electronic device, and in particular to an electronic device in which a light-emitting component and a thin film transistor array are arranged on different substrates. Background Art

[0002] Electronic products containing display panels, such as smartphones, tablets, laptops, monitors, and TVs, have become indispensable necessities in modern society. With the booming growth of these portable electronic products, consumers have high expectations for these products, whether in terms of quality, functionality, or price.

[0003] Generally speaking, the light-emitting components and driver components (such as a thin-film transistor array) are arranged on the same substrate, or the light-emitting units are directly arranged on the thin-film transistor driver substrate. Therefore, the selection of materials and processes for the thin-film transistor driver substrate must also consider compatibility with the light-emitting component manufacturing process (such as the process of bonding the light-emitting component to the substrate). However, this may lead to problems such as reduced process yield or increased costs. For example, a material suitable for the thin-film transistor driver substrate may not be conducive to the bonding, fixing, or formation of guide holes for the light-emitting component.

[0004] As mentioned above, although existing electronic devices including light-emitting components and driver components can generally meet their original purposes, they still do not fully meet the needs in all aspects. Therefore, developing structural designs that can improve the quality or reliability of such electronic devices is still one of the research topics currently being devoted to in the industry. Summary of the Invention

[0005] The present invention provides an electronic device including a plurality of light emitting components and a first thin film transistor array. The first thin film transistor array is used to drive at least a portion of the plurality of light emitting components. The plurality of light emitting components and the first thin film transistor array are arranged on different substrates.

[0006] In one embodiment of the present invention, the plurality of light-emitting elements are disposed on a first substrate and the first thin film transistor array is disposed on a second substrate, wherein an area of ​​the second substrate is smaller than an area of ​​the first substrate.

[0007] In one embodiment of the present invention, the plurality of light-emitting components include light-emitting diode packages, light-emitting diode chips, or a combination thereof.

[0008] In one embodiment of the present invention, the plurality of light-emitting elements are arranged in an array.

[0009] In one embodiment of the present invention, the electronic device further includes a second thin film transistor array, wherein the plurality of light-emitting components, the first thin film transistor array, and the second thin film transistor array are disposed on different substrates, and the first thin film transistor array and the second thin film transistor array are used to drive different portions of the plurality of light-emitting components.

[0010] In one embodiment of the present invention, the plurality of light-emitting components are disposed on a first substrate, the first thin-film transistor array is disposed on a second substrate, and the second thin-film transistor array is disposed on a third substrate, and wherein the total area of ​​the second substrate and the third substrate is smaller than the area of ​​the first substrate.

[0011] In one embodiment of the present invention, the first thin film transistor array is electrically connected to the second thin film transistor array.

[0012] In one embodiment of the present invention, the first thin film transistor array is not electrically connected to the second thin film transistor array.

[0013] In one embodiment of the present invention, the plurality of light-emitting components and the second substrate are disposed on different sides of the first substrate.

[0014] In one embodiment of the present invention, the plurality of light-emitting elements and the second substrate are disposed on the same side of the first substrate.

[0015] In order to make the features and advantages of the present invention more clearly understood, some embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to make the above-mentioned objects, features and advantages of the present invention more clearly understood, the specific embodiments of the present invention are described in detail below with reference to the accompanying drawings, in which:

[0017] Figure 1 A schematic diagram showing a partial cross-sectional structure of an electronic device according to some embodiments of the present invention;

[0018] Figure 2 Shows a unit circuit diagram of an electronic device according to some embodiments of the present invention;

[0019] Figure 3 In some embodiments according to the present invention, Figure 1 A schematic diagram of the structure of region A;

[0020] Figure 4 Shows a bottom-view structural diagram of an electronic device according to some embodiments of the present invention;

[0021] Figure 5Shows a bottom-view structural diagram of an electronic device according to some embodiments of the present invention;

[0022] Figure 6 A schematic diagram showing a partial cross-sectional structure of an electronic device according to some embodiments of the present invention;

[0023] Figure 7 A schematic diagram showing a partial cross-sectional structure of an electronic device according to some embodiments of the present invention;

[0024] Figure 8 A schematic diagram showing a partial cross-sectional structure of an electronic device according to some embodiments of the present invention;

[0025] Figure 9 A schematic diagram showing a partial cross-sectional structure of an electronic device according to some embodiments of the present invention;

[0026] Figure 10 A schematic diagram showing a partial cross-sectional structure of an electronic device according to some embodiments of the present invention;

[0027] Figure 11 Shows a schematic top view of an electronic device according to some embodiments of the present invention;

[0028] Figure 12 A schematic diagram showing a partial cross-sectional structure of an electronic device according to some embodiments of the present invention;

[0029] Figure 13 A schematic diagram showing a partial cross-sectional structure of an electronic device according to some embodiments of the present invention;

[0030] Figure 14 A schematic diagram of a partial cross-sectional structure of an electronic device according to some embodiments of the present invention is shown.

[0031] Explanation of symbols:

[0032] 10A, 10B, 10C, 10D, 10E, 10F, 10G: Electronic devices

[0033] 100: Light-emitting components

[0034] 100P: spacing

[0035] 102: Intermediate substrate

[0036] 104: Light-emitting unit

[0037] 104a, 104b, 104c: light-emitting subunits

[0038] 106: Contact pad

[0039] 108: Protective layer

[0040] 150: Light extraction layer

[0041] 152: Protective layer

[0042] 202: first substrate

[0043] 202a: first surface

[0044] 202b: Second surface

[0045] 202s: side surface

[0046] 204:Reflection layer

[0047] 210: Guide hole

[0048] 210L: Inline structure

[0049] 220: conductive film layer

[0050] 250:Bridge pad

[0051] 260:Test pad

[0052] 270: Light absorption layer

[0053] 300, 300-1, 300-2, 300-3, 300-4: Thin film transistor array

[0054] 300B: welding materials

[0055] 300G: Circuit Group

[0056] 300K: Thin film transistor array package

[0057] 300L:Metal wire

[0058] 300R: reflective layer

[0059] 300T: Thin Film Transistor

[0060] 302, 302-1, 302-2: second substrate

[0061] 302a: first surface

[0062] 302P:Packaging substrate

[0063] 304: Contact pad

[0064] 306: conductive film layer

[0065] 308: Protective layer

[0066] 310: Gate

[0067] 312: Gate dielectric layer

[0068] 314: Semiconductors

[0069] 316D: Drain

[0070] 316S: Source

[0071] 318: Flat layer

[0072] 320: Guide hole

[0073] 330: Driver integrated circuit

[0074] 332: Connection layer

[0075] 350: Signal input terminal

[0076] 352:Signal output terminal

[0077] 354: Conductive circuit

[0078] 400: Electronic components

[0079] 500: Panel

[0080] 502: Optical film layer

[0081] 502a, 502b, 502c: sublayer

[0082] 602: Intermediate substrate

[0083] 604: Adhesive layer

[0084] A: Area

[0085] DL: data line

[0086] Em: Luminous signal terminal

[0087] SL: Scan Line

[0088] SL': Sweep Line

[0089] T:Thickness

[0090] VDD: voltage terminal

[0091] VSS: voltage terminal DETAILED DESCRIPTION

[0092] The following is a detailed description of an electronic device according to an embodiment of the present invention. It should be understood that the following description provides many different embodiments for implementing different aspects of some embodiments of the present invention. The specific components and arrangements described below are merely for the purpose of simply and clearly describing some embodiments of the present invention and are intended to be illustrative only and not limiting of the present invention. In addition, similar and / or corresponding reference numerals may be used in different embodiments only to simplify and clearly describe some embodiments and do not represent any relationship between the different embodiments and / or structures discussed.

[0093] The present invention will be understood by referring to the following detailed description in conjunction with the accompanying drawings. It should be noted that, for ease of understanding and simplicity, many of the figures in this disclosure depict only portions of the electronic device, and certain components in the figures are not drawn to scale. Furthermore, the number and dimensions of components in the figures are for illustrative purposes only and are not intended to limit the scope of the present invention.

[0094] Certain words will be used throughout the specification and claims of the present invention to refer to specific components. It should be understood by those skilled in the art that electronic equipment manufacturers may refer to the same components by different names. This document does not intend to distinguish between components that have the same function but different names. In the following specification and claims, words such as "include", "contain", "have" are open-ended words and should be interpreted as meaning "including but not limited to..." Therefore, when the terms "include", "contain" and / or "have" are used in the description of the present invention, they specify the existence of corresponding features, areas, steps, operations and / or components, but do not exclude the existence of one or more corresponding features, areas, steps, operations and / or components.

[0095] Directional terms used herein, such as "up," "down," "front," "back," "left," and "right," are used solely with reference to the directions of the accompanying drawings. Therefore, the directional terms used are intended to illustrate, not to limit, the present invention. In the accompanying drawings, each figure depicts the general characteristics of the methods, structures, and / or materials used in a particular embodiment. However, these figures should not be construed as defining or limiting the scope or nature of the embodiments. For example, the relative sizes, thicknesses, and positions of various layers, regions, and / or structures may be reduced or exaggerated for clarity.

[0096] When a component (such as a layer or region) is referred to as being "on" another component, it can be directly on the other component or there can be other components between the two components. On the other hand, when a component is referred to as being "directly on" another component, there are no components between the two components. In addition, when a component is referred to as being "on" another component, the two components have a top-to-bottom relationship in a top-down view, and the component can be above or below the other component, depending on the orientation of the device.

[0097] Furthermore, terms such as “connected” in the specification and claims may not only refer to direct connection with other components but may also refer to indirect connection and electrical connection with other components.

[0098] The terms "about," "equal," "equal" or "same," "substantially" or "approximately" are generally interpreted as within 20% of a given value or range, or within 10%, 5%, 3%, 2%, 1% or 0.5% of a given value or range.

[0099] The use of ordinal numbers such as "first," "second," and the like in the specification and claims to modify components does not, by itself, imply or indicate any prior ordinal number of the component(s), nor does it indicate the order of one component relative to another, or the order of manufacturing methods. These ordinal numbers are used solely to clearly distinguish a component with a certain name from another component with the same name. The claims and the specification may not use the same terminology; thus, the first component in the specification may be the second component in the claims.

[0100] It should be understood that the following embodiments may be implemented by replacing, recombining, or combining features from various embodiments to create other embodiments without departing from the spirit of the present invention. Features from various embodiments may be mixed and matched as needed, as long as they do not violate the spirit of the invention or conflict with it.

[0101] In the present invention, thickness, length, and width can be measured using an optical microscope, and thickness can be measured using cross-sectional images obtained through an electron microscope, but this is not a limitation. Furthermore, any two values ​​or directions used for comparison may have a certain degree of error. If a first value is equal to a second value, this implies that there may be an error of approximately 10% between the first and second values. If a first direction is perpendicular to a second direction, the angle between the first and second directions may be between 80 and 100 degrees. If the first direction is parallel to the second direction, the angle between the first and second directions may be between 0 and 10 degrees.

[0102] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meanings as commonly understood by one skilled in the art to which this invention belongs. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the background or context of the relevant art and this invention, and should not be interpreted in an idealized or overly formal manner unless specifically defined in the embodiments of this invention.

[0103] According to some embodiments of the present invention, an electronic device is provided that includes a light-emitting element and a thin-film transistor array disposed on separate substrates. This allows the thin-film transistor array and the light-emitting element to be independently selected in terms of substrate material and manufacturing process, thereby improving process yield, product reliability, or reducing production costs. Furthermore, according to some embodiments, the substrate on which the thin-film transistor array is mounted can be smaller than the substrate on which the light-emitting element is mounted, thereby increasing the space available for electrical connection between the thin-film transistor array and the light-emitting element (e.g., increasing the connection space and the number of contacts).

[0104] According to some embodiments of the present invention, the electronic device may include a display device, a light-emitting device, a touch device, a sensing device, an antenna device, or a splicing device (a splicing device having any of the above functions or a combination of functions), but is not limited thereto. The electronic device may include a bendable electronic device or a flexible electronic device, but is not limited thereto. The electronic device may, for example, include liquid crystal, a light-emitting diode (LED), a quantum dot (QD), fluorescence, phosphor, other suitable materials, or a combination of the foregoing. The light-emitting diode may, for example, include an organic light-emitting diode (OLED), a micro light-emitting diode (micro-LED, mini-LED), or a quantum dot light-emitting diode (QLED, QDLED), but is not limited thereto. According to some embodiments, the electronic device may include a panel and / or a backlight module, and the panel may, for example, include a liquid crystal panel, but is not limited thereto. It should be understood that the electronic device of the present invention will be described below using a display device as an example, but the present invention is not limited thereto.

[0105] Please refer to Figure 1 , Figure 1 A partial cross-sectional structural diagram of an electronic device 10A according to some embodiments of the present invention is shown. It should be understood that for the sake of clarity, Figure 1Some components of the electronic device 10A are omitted, and only some components formed or disposed on the first substrate 202 or the second substrate 302 are schematically illustrated, such as a portion of the light-emitting element 100 and a portion of the thin-film transistor array 300. According to some embodiments, additional features or components may be optionally added to the electronic device 10A. According to some embodiments, some features of the electronic device 10 described below may be selectively replaced or omitted.

[0106] like Figure 1 As shown, according to some embodiments, the electronic device 10A may include a thin film transistor array 300 and a plurality of light emitting components 100, and the thin film transistor array 300 may be used to drive at least a portion of the light emitting components 100. For example, according to some embodiments, the electronic device 10A may include multiple thin film transistor arrays 300, and the multiple thin film transistor arrays 300 may be used to drive different portions or light emitting components 100 located in different areas. Figure 1 As shown, the light emitting element 100 and the thin film transistor array 300 are disposed on different substrates. Specifically, according to some embodiments, the electronic device 10A may include a first substrate 202 and a second substrate 302 , wherein the light emitting element 100 is disposed on the first substrate 202 and the thin film transistor array 300 is disposed on the second substrate 302 .

[0107] According to some embodiments, the light emitting component 100 and the second substrate 302 are disposed on different sides of the first substrate 202. Specifically, the first substrate 202 has a first surface 202a and a second surface 202b located on opposite sides. According to some embodiments, the light emitting component 100 is located above the first surface 202a, and the second substrate 302 is disposed above the second surface 202b. The light emitting component 100 and the second substrate 302 may be in contact with the first substrate 202 or not in direct contact with the first substrate 202. Figure 1 As shown, according to some embodiments, the light emitting assembly 100 is in contact with the first substrate 202 , while the second substrate 302 is not in contact with the first substrate 202 .

[0108] Furthermore, the first substrate 202 may include a rigid substrate or a flexible substrate. In some embodiments, the first substrate 202 may be a printed circuit board (PCB). In some embodiments, the material of the first substrate 202 may include, but is not limited to, ceramic, aluminum, copper, fiberglass, other suitable materials, or combinations thereof. In some embodiments, the first substrate 202 may include, but is not limited to, a metal-fiberglass composite sheet or a metal-ceramic composite sheet.

[0109] According to some embodiments, the light-emitting component 100 may include an inorganic light-emitting diode (ILD), a micro-LED (micro-LED, mini-LED), an organic light-emitting diode (OLED), or a quantum dot light-emitting diode (QLED, QDLED), but is not limited thereto. According to some embodiments, the light-emitting component 100 may be arranged in an array. According to some embodiments, the light-emitting component 100 may include a light-emitting diode package, a light-emitting diode chip, or a combination thereof. In other words, the light-emitting component 100 may exist in a packaged form or in a bare die form. According to some embodiments, the packaging method of the light-emitting component 100 may include a surface-mount device (SMD) packaging of a light-emitting diode, a chip-on-board (COB) packaging of a light-emitting diode, a micro-LED or flip-chip light-emitting diode packaging, an organic light-emitting diode packaging, other suitable packaging, or a combination thereof, but is not limited thereto. Figure 1 The light emitting element 100 is described as a light emitting diode package as an example. Specifically, according to some embodiments, the light emitting element 100 may include an intermediate substrate 102 , a light emitting unit 104 , a contact pad 106 , and a protective layer 108 .

[0110] According to some embodiments, the intermediate substrate 102 may be disposed between the light-emitting unit 104 and the contact pad 106, and the light-emitting unit 104 may be electrically connected to the contact pad 106 via a via (not shown) extending through the intermediate substrate 102, but the present invention is not limited thereto. According to some embodiments, the material of the intermediate substrate 102 may include glass, ceramic, plastic, other suitable materials, or a combination thereof, but the present invention is not limited thereto. According to some embodiments, the material of the intermediate substrate 102 may include epoxy resins, polymerized siloxanes (silicone), polyimide (PI), polyethylene terephthalate (PET), polycarbonate (PC), other suitable materials, or a combination thereof, but the present invention is not limited thereto. Furthermore, according to some embodiments, the intermediate substrate 102 may include a metal-glass fiber composite sheet or a metal-ceramic composite sheet, but the present invention is not limited thereto.

[0111] According to some embodiments, the light-emitting component 100 may include a plurality of light-emitting units 104, which may serve as a light source for an electronic device. According to some embodiments, the light-emitting subunits 104a, 104b, and 104c may emit light of a single color, with the light-emitting subunits 104a, 104b, and 104c being different colors. According to some embodiments, the light-emitting unit 104 may be combined with the light-emitting subunits 104a, 104b, and 104c to emit light of multiple colors or a mixture of multiple colors (e.g., white light). According to some embodiments, the light-emitting unit 104 may emit light of a single color as a light source for a device. According to some embodiments, the light-emitting component 100 may correspond to a pixel, and the light-emitting component 100 may have an appropriate number of light-emitting units 104, such as the light-emitting subunits 104a, 104b, and 104c. According to some embodiments, the light-emitting sub-unit 104a, the light-emitting sub-unit 104b, and the light-emitting sub-unit 104c may be three light-emitting diode dies corresponding to three sub-pixels. For example, according to some embodiments, the light-emitting sub-unit 104a, the light-emitting sub-unit 104b, and the light-emitting sub-unit 104c may be red, green, and blue sub-pixels arranged in a suitable manner, but the present invention is not limited thereto. According to other embodiments, a light-emitting component 100 may include red, green, blue, or white light-emitting units (sub-pixels), or light-emitting units of other suitable colors, but the present invention is not limited thereto. In addition, according to some embodiments, the light-emitting sub-unit 104a, the light-emitting sub-unit 104b, and the light-emitting sub-unit 104c may be light-emitting diode dies that can emit light of different colors, or light-emitting diode dies that emit light of the same color.

[0112] In addition, if Figure 1 As shown, according to some embodiments, the light-emitting component 100 may include a plurality of contact pads 106. The contact pads 106 may be disposed on and in contact with the first substrate 202. According to some embodiments, the contact pads 106 may be electrically connected to the anode electrode or cathode electrode of the die of the light-emitting component 100. Specifically, in this embodiment, the light-emitting component 100 has three light-emitting sub-units 104a, 104b, and 104c. Three of the contact pads 106 may be electrically connected to the anode electrodes of the dies of the three light-emitting sub-units 104a, 104b, and 104c, and one of the contact pads 106 may be electrically connected to the cathode electrodes of the dies of the light-emitting sub-units 104a, 104b, and 104c. In other words, the three light-emitting sub-units 104a, 104b, and 104c may have a common cathode. However, the connection method of the anode electrodes or cathode electrodes of the die of the light-emitting component 100 is not limited thereto.

[0113] According to some embodiments, the contact pad 106 may include a conductive material. According to some embodiments, the contact pad 106 may include a metallic conductive material, a transparent conductive material, or a combination thereof. For example, the metallic conductive material may include copper (Cu), aluminum (Al), molybdenum (Mo), silver (Ag), tin (Sn), tungsten (W), gold (Au), chromium (Cr), nickel (Ni), platinum (Pt), copper alloys, aluminum alloys, molybdenum alloys, silver alloys, tin alloys, tungsten alloys, gold alloys, chromium alloys, nickel alloys, platinum alloys, other suitable metal materials, or a combination thereof, but is not limited thereto. The transparent conductive material may include, for example, a transparent conductive oxide (TCO). For example, the transparent conductive oxide may include indium tin oxide (ITO), tin oxide (SnO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), antimony tin oxide (ATO), antimony zinc oxide (AZO), other suitable transparent conductive materials, or combinations thereof, but is not limited thereto.

[0114] In addition, according to some embodiments, a protective layer 108 may be disposed above the intermediate substrate 102 and cover the light-emitting unit 104. According to some embodiments, the protective layer 108 may selectively cover the top surface and side surfaces of the light-emitting unit 104. According to some embodiments, the protective layer 108 may have a profile in a cross-sectional direction, and at least a portion of the profile may be arc-shaped (not shown). According to some embodiments, the protective layer 108 may include an organic material, an inorganic material, other suitable packaging materials, or a combination thereof, but is not limited thereto. According to some embodiments, the aforementioned inorganic material may include silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, or other suitable materials, but is not limited thereto. According to some embodiments, the organic material may include epoxy resins, silicone resins, acrylic resins (e.g., polymethylmethacrylate (PMMA), benzocyclobutene (BCB), polyimide, polyester, polydimethylsiloxane (PDMS), tetrafluoroethylene-perfluoroalkoxy vinyl ether copolymer (PFA)), other suitable materials, or combinations thereof, but is not limited thereto.

[0115] Furthermore, according to some embodiments, the protective layer 108 may have a wavelength conversion function, for example, converting the light generated by the light-emitting unit 104 into light having a specific wavelength range (specific color). According to some embodiments, the protective layer 108 may further include particles having a wavelength conversion function, such as phosphors, quantum dots (QD) materials, organic fluorescent materials, other suitable materials, or combinations thereof, but is not limited thereto.

[0116] like Figure 1As shown, according to some embodiments, the electronic device 10A may further include a reflective layer 204 disposed on the first substrate 202. The reflective layer 204 may improve the light extraction efficiency of the light-emitting component 100 or increase the amount of light output. According to some embodiments, the reflective layer 204 may be in contact with the light-emitting component 100. According to other embodiments, the reflective layer 204 may not be in contact with the light-emitting component 100. According to some embodiments, the contact pad 106 of the light-emitting component 100 may be partially buried in the reflective layer 204. According to some embodiments, the reflective layer 204 may include a material with high reflectivity (for example, a reflectivity between 70% and 99%). According to some embodiments, the high reflectivity material may include silver (Ag), aluminum (Al), titanium (Ti), titanium dioxide (TiO2), other suitable reflective materials, or combinations thereof, but is not limited thereto. According to some embodiments, the reflective layer 204 may include white ink, white tape, or white photoresist, but is not limited thereto.

[0117] As previously mentioned, the thin film transistor array 300 may be disposed on the second substrate 302. According to some embodiments, the thin film transistor array 300 may be disposed on a side of the second substrate 302 farther from the first substrate 202. Furthermore, the thin film transistor array 300 may include a driver element (not shown). According to some embodiments, the driver element may include, but is not limited to, a thin film transistor (TFT). The thin film transistor may include, for example, a switch transistor, a drive transistor, a reset transistor, or other thin film transistors.

[0118] Furthermore, the second substrate 302 may include a rigid substrate or a flexible substrate. According to some embodiments, the material of the second substrate 302 may include, but is not limited to, glass, quartz, sapphire, polyimide (PI), polycarbonate (PC), polyethylene terephthalate (PET), other suitable materials, or combinations thereof. Furthermore, according to some embodiments, the material of the second substrate 302 is different from the material of the first substrate 202.

[0119] Furthermore, according to some embodiments, the material of the second substrate 302 may include a semiconductor material, such as, but not limited to, silicon (Si), germanium (Ge), other suitable semiconductor materials, or combinations thereof. According to some embodiments, the material of the second substrate 302 includes a silicon wafer. In particular, in embodiments where the material of the second substrate 302 includes a semiconductor material, the thin film transistor array 300 can be formed using a semiconductor process, further improving the performance of the thin film transistor array 300 and reducing the size of the thin film transistor array 300.

[0120] According to some embodiments, the area of ​​the second substrate 302 is smaller than the area of ​​the first substrate 202. According to some embodiments, the area of ​​the first substrate 202 refers to the area of ​​the surface of the first substrate 202 on which the light-emitting component 100 is disposed, such as the first surface 202a shown in the figures. Furthermore, the area of ​​the second substrate 302 refers to the area of ​​the surface of the second substrate 302 on which the driving array 300 is disposed, such as the first surface 302a shown in the figures.

[0121] It is worth noting that since the material of the substrate (second substrate 302) on which the thin film transistor array 300 is provided is generally expensive, if the area of ​​the second substrate 302 on which the thin film transistor array 300 is provided is smaller than the area of ​​the first substrate 202 on which the light-emitting component 100 is provided, the amount of the second substrate 302 used can be reduced, thereby reducing production costs.

[0122] Furthermore, please refer to Figure 1 According to some embodiments, the thin film transistor array 300 may further include contact pads 304, which may be electrically connected to a driving element (not shown). The contact pads 304 may include a conductive material. The material of the contact pads 304 may be the same as or similar to the material of the contact pads 106 of the aforementioned light-emitting element 100, and will not be further described here.

[0123] According to some embodiments, the electronic device 10A may further include a conductive film layer 306, which may contact the contact pads 304 and the first substrate 202. Specifically, according to some embodiments, the conductive film layer 306 may contact the vias 210 disposed in the first substrate 202 and the contact pads 304. The contact pads 304 of the thin-film transistor array 300 may be electrically connected to the contact pads 106 of the light-emitting element 100 via the conductive film layer 306 and the vias 210, thereby transmitting electronic signals from the thin-film transistor array 300 to the light-emitting element 100.

[0124] According to some embodiments, the conductive film layer 306 is flexible and can be bent to connect the contact pad 304 and the via 210. According to some embodiments, the conductive film layer 306 may include a base layer (not shown) and a conductive layer (not shown) formed on the base layer. According to some embodiments, the base layer may include polyimide (PI) or other suitable flexible materials, but is not limited thereto. According to some embodiments, the conductive film layer 306 may be a flexible printed circuit (FPC) board, but is not limited thereto.

[0125] According to some embodiments, the vias 210 may penetrate the first substrate 202 and directly contact the contact pads 106 and the conductive film layer 306. However, according to some embodiments, the vias 210 may not penetrate the first substrate 202 directly, but may instead contact the contact pads 106 and the conductive film layer 306 via interconnect structures (e.g., including multiple vias and multiple metal layers) within the first substrate 202 to provide electrical connections. Furthermore, according to some embodiments, a through-hole may be formed in the first substrate 202 using one or more photolithography processes, etching processes, laser processes, and / or machining processes, and then filled with a conductive material to form the vias 210. According to some embodiments, the photolithography process may include, but is not limited to, photoresist coating (e.g., spin coating), soft baking, hard baking, mask alignment, exposure, post-exposure baking, photoresist development, cleaning, and drying. The etching process may include, but is not limited to, a dry etching process or a wet etching process.

[0126] In addition, if Figure 1 As shown, according to some embodiments, the electronic device 10A may further include other electronic components 400 disposed on the first substrate 202. According to some embodiments, the electronic components 400 may be disposed on the second surface 202b of the first substrate 202, that is, the electronic components 400 may be disposed on the same side of the first substrate 202 as the thin film transistor array 300, but the present invention is not limited thereto. According to some embodiments, the electronic components 400 may include driving components such as integrated circuits (ICs) or microchips, resistor components, capacitor components, gate-on-panel (GOP) structures, or other suitable electronic components that can provide electronic signals or logic signals, but are not limited thereto.

[0127] As previously mentioned, according to some embodiments of the present invention, the light-emitting element 100 and the thin-film transistor array 300 are disposed on different substrates. It is noteworthy that, in this manner, the thin-film transistor array 300 and the light-emitting element 100 can be independently selected in terms of substrate material and manufacturing process, thereby improving process yield and product reliability. Specifically, the light-emitting element 100 can be disposed on a substrate material that has a better bonding effect or is more conducive to the formation of the guide vias 210, such as ceramic, aluminum, copper, fiberglass, etc. The substrate material is not limited to the substrate material required for the thin-film transistor array 300 manufacturing process, such as glass, quartz, sapphire, polyimide, polycarbonate, polyethylene terephthalate, etc.

[0128] Next, please refer to Figure 2 , Figure 2 The unit circuit diagram of the electronic device 10A according to some embodiments of the present invention is shown. Figure 2The circuit relationship among two driving elements (two thin film transistors 300T shown in the figure), an electronic element 400 and a light emitting element 100 in the thin film transistor array 300 according to some embodiments of the present invention is merely schematically illustrated.

[0129] like Figure 2 As shown, according to some embodiments, the scan line SL and the data line DL can be electrically connected to the electronic component 400. The scan line SL and the data line DL can transmit signals to the electronic component 400, and the signals can then be transmitted to the thin film transistor 300T. The thin film transistor 300T is electrically connected to the voltage terminal VDD and the voltage terminal VSS. According to some embodiments, the thin film transistor 300T can include at least a driving transistor and a light-sensitive transistor electrically connected to the light-emitting signal terminal Em. The driving transistor and the light-sensitive transistor can jointly control whether the light-emitting component 100 emits light or adjust the light brightness. The electronic component 400 can include one or more thin film transistors and / or one or more capacitors, but is not limited thereto. In addition to transmitting signals from the scan line SL and the data line DL, the electronic component 400 can also have bias compensation and / or charge storage functions. It should be understood that a thin film transistor may include a gate, a source, and a drain. When one component is electrically connected to the gate of a thin film transistor and another component is electrically connected to the source and / or drain of the thin film transistor, the two components are considered to be electrically connected. For example, if the data line DL is electrically connected to the gate of the thin film transistor 300T and the voltage terminal VDD is electrically connected to the source of the thin film transistor 300T, the data line DL is considered to be electrically connected to the voltage terminal VDD. It should be understood that the configuration relationship between the driving transistor and the light-sensitive transistor connected to the light-emitting signal terminal Em is not limited to that shown in the figure. According to different embodiments, the appropriate circuit configuration relationship can be adjusted according to actual needs.

[0130] Next, please refer to Figure 3 , Figure 3 In some embodiments according to the present invention, Figure 1 A schematic diagram of the structure of region A, Figure 3 FIG. 3 is a schematic diagram showing the detailed structure of the thin film transistor array 300 disposed on the second substrate 302. Figure 3As shown, according to some embodiments, the thin film transistor array 300 includes a thin film transistor structure, specifically, a gate 310, a gate dielectric layer 312, a semiconductor 314, a source 316S, a drain 316D, a planarization layer 318, a via 320, and a contact pad 304. According to some embodiments, the gate dielectric layer 312 is disposed between the semiconductor 314 and the gate 310. In a normal direction (e.g., the Z direction shown in the figure) of the second substrate 302, the semiconductor 314 and the gate 310 at least partially overlap. The source 316S and the drain 316D are disposed on either side of the semiconductor 314 and overlap with portions of both sides of the semiconductor 314 in a normal direction to the second substrate 302. In addition, according to some embodiments, the planarization layer 318 may cover the source 316S, the drain 316D, and the semiconductor 314, and the via 320 may penetrate a portion of the planarization layer 318 to electrically connect to the contact pad 304.

[0131] According to some embodiments, the material of gate 310 may include amorphous silicon, polycrystalline silicon, one or more metals, metal nitrides, conductive metal oxides, or combinations thereof, but is not limited thereto. The metals may include, but is not limited to, molybdenum, tungsten, titanium, tantalum, platinum, hafnium, or combinations thereof. The metal nitrides may include, but is not limited to, molybdenum nitride, tungsten nitride, titanium nitride, tantalum nitride, or combinations thereof.

[0132] According to some embodiments, the material of the gate dielectric layer 312 may include, but is not limited to, silicon oxide, silicon nitride, silicon oxynitride, a high-k dielectric material, other suitable dielectric materials, or combinations thereof. The high-k dielectric material may include, but is not limited to, a metal oxide, a metal nitride, a metal silicide, a transition metal oxide, a transition metal nitride, a transition metal silicide, a metal oxynitride, a metal aluminate, a zirconium silicate, a zirconium aluminate, or combinations thereof.

[0133] According to some embodiments, the material of semiconductor 314 includes, but is not limited to, amorphous silicon, such as low-temp polysilicon (LTPS), metal oxide, other suitable materials, or combinations thereof, but is not limited thereto. For example, the metal oxide may include, but is not limited to, indium gallium zinc oxide (IGZO), indium zinc oxide (IZO), indium gallium zinc tin oxide (IGZTO), other suitable materials, or combinations thereof. According to some embodiments, different thin film transistors may include the same semiconductor material or different semiconductor materials, but is not limited thereto.

[0134] According to some embodiments, the material of the source 316S and the drain 316D may include copper, aluminum, molybdenum, tungsten, gold, chromium, nickel, platinum, titanium, iridium, rhodium, copper alloy, aluminum alloy, molybdenum alloy, tungsten alloy, gold alloy, chromium alloy, nickel alloy, platinum alloy, titanium alloy, iridium alloy, rhodium alloy, other suitable conductive materials, or combinations thereof, but are not limited thereto.

[0135] Furthermore, according to some embodiments, the planarization layer 318 may include an organic material, an inorganic material, other suitable materials, or a combination thereof, but is not limited thereto. For example, the inorganic material may include silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, other suitable materials, or a combination thereof, but is not limited thereto. For example, the organic material may include epoxy resins, silicone resins, acrylic resins (e.g., polymethylmethacrylate (PMMA), polyimide, perfluoroalkoxy alkane (PFA), other suitable materials, or a combination thereof, but is not limited thereto.

[0136] According to some embodiments, the via 320 may include a conductive material, such as a metallic conductive material. According to some embodiments, the metallic conductive material may include, but is not limited to, aluminum, molybdenum, silver, tin, tungsten, gold, chromium, nickel, platinum, copper alloys, aluminum alloys, molybdenum alloys, silver alloys, tin alloys, tungsten alloys, gold alloys, chromium alloys, nickel alloys, platinum alloys, other suitable metal materials, or combinations thereof.

[0137] In addition, according to some embodiments, the driving component may include a bottom gate thin film transistor, and according to other embodiments, the driving component may include a top gate thin film transistor. The driving component can be designed or combined according to needs, but is not limited thereto.

[0138] Next, please refer to Figure 4 , Figure 4 The following is a bottom view of an electronic device 10A according to some embodiments of the present invention. Specifically, Figure 4 The configuration relationship of the thin film transistor array 300 and related circuits disposed on the second surface 202b of the first substrate 202 is shown. It should be understood that for the sake of clarity, Figure 4 Not all circuits disposed on the second surface 202b are shown.

[0139] like Figure 4As shown, according to some embodiments, a plurality of thin film transistor arrays 300 may be disposed on the second surface 202b. One thin film transistor array 300 may include a plurality of circuit groups 300G. The circuit group 300G may include a plurality of thin film transistors 300T. The scan lines SL and the data lines DL may be staggered to define the circuit group 300G. The scan lines SL may be electrically connected to the driver integrated circuit (IC) 330, and the scan lines SL may be integrated at one end into a collection scan line SL.

[0140] According to some embodiments, the driver integrated circuit 330 can be disposed on the first substrate 202 and / or the second substrate 302 in the form of a chip on film (COF) package or a chip on glass (COG) package. According to some embodiments, the driver integrated circuit 330 can be electrically connected to the connection layer 332. The signal input terminal 350 can transmit the signal to the driver integrated circuit 330 via the connection layer 332, and then transmit the signal to the circuit group 300G. In addition, the circuit group 300G can transmit the signal to the signal output terminal 352, which then transmits the signal to the light-emitting element 100 disposed on the first substrate 202. The signal output terminal 352 can be disposed on the conductive film layer 306.

[0141] According to some embodiments, the length of the second substrate 302 may be between about 0.5 mm and about 20 mm, or between about 1 mm and about 10 mm, for example, 2 mm or 3 mm. The width of the second substrate may be between about 0.5 mm and about 20 mm, or between about 1 mm and about 10 mm, for example, 2 mm or 3 mm. According to some embodiments, the length of the second substrate may be the same as the width, that is, the area of ​​the second substrate 302 (length * width) may range from about 0.5 mm * 0.5 mm to about 20 mm * 20 mm (0.5 mm * 0.5 mm ≤ area of ​​the second substrate 302 ≤ 20 mm * 20 mm), or from about 1 mm * 1 mm to about 10 mm * 10 mm, for example, 2 mm * 2 mm or 3 mm * 3 mm. According to other embodiments, the length of the second substrate may be different from the width. The shape and size of the second substrate can be designed based on actual needs and are not limited thereto.

[0142] Furthermore, according to embodiments of the present invention, the area, width, length, thickness of each component, or the distance between components can be measured using an optical microscope (OM), a scanning electron microscope (SEM), an α-step thin film thickness profilometer, an ellipsometer, or other suitable methods. Specifically, according to some embodiments, a scanning electron microscope can be used to obtain a cross-sectional image of a component to be measured, and the area, width, length, thickness, or distance between components of the component in the image can be measured.

[0143] In addition, if Figure 4 As shown, according to some embodiments, the thin film transistor arrays 300 are electrically connected to different driver integrated circuits 330. In other words, according to some embodiments, the driver integrated circuits 330 drive different thin film transistor arrays 300 respectively. For example, the thin film transistor array 300-1 and the thin film transistor array 300-2 shown in the figure are controlled by different driver integrated circuits 330.

[0144] Please refer to Figure 5 , Figure 5 The following is a bottom view of the electronic device 10A according to some other embodiments of the present invention. Figure 5 As shown, according to some embodiments, a driver integrated circuit 330 can be electrically connected to multiple thin film transistor arrays 300, and this driver integrated circuit 330 can be disposed on the first substrate 202. In other words, according to some embodiments, multiple thin film transistor arrays 300 are electrically connected to each other. For example, the thin film transistor array 300-1 shown in the figure can be electrically connected to the thin film transistor array 300-2. Multiple thin film transistor arrays 300 can be controlled by the same driver integrated circuit 330. In detail, according to some embodiments, the driver integrated circuit 330 can sequentially transmit signals to the thin film transistor array 300-1, the thin film transistor array 300-2, the thin film transistor array 300-3, and the thin film transistor array 300-4. In addition, according to some embodiments, a conductive line 354 can be disposed on the first substrate 202, connecting the thin film transistor array 300-1, the thin film transistor array 300-2, the thin film transistor array 300-3, and the thin film transistor array 300-4, so that they are electrically connected to each other.

[0145] Furthermore, according to other embodiments (not shown), a chip-on-film (COF) package may include a driver integrated circuit 330. The COF is disposed on a second substrate 302 and electrically connected to the thin-film transistor array 300. Furthermore, multiple thin-film transistor arrays 300 are electrically connected to each other, and multiple thin-film transistor arrays 300 can be sequentially controlled by a single driver integrated circuit 330. With this configuration, a single driver integrated circuit 330 can drive multiple thin-film transistor arrays 300 (and thus, multiple light-emitting devices 100), thereby effectively reducing production costs.

[0146] In addition to the aforementioned embodiment of the thin film transistor array 300 being controlled by active driving, according to some embodiments, the thin film transistor array 300 may also be passively driven. Specifically, according to some embodiments, the thin film transistors 300T in the thin film transistor array 300 may serve solely as switching transistors to control the on / off switching of the light emitting element 100. The electronic device may further include a pulse-width modulation control integrated circuit (PWM IC) disposed on the first substrate 202. The PWM control IC may control all signals (currents) driving the light emitting element 100, generate PWM signals, and control the brightness of the light emitting element 100.

[0147] Next, please refer to Figure 6 , Figure 6 Schematic diagrams of partial cross-sectional structures of electronic devices 10B according to other embodiments of the present invention are shown. It should be understood that components or parts identical or similar to those previously described will be denoted by identical or similar reference numerals, and their materials, manufacturing methods, and functions are identical or similar to those previously described, and therefore will not be further described.

[0148] like Figure 6 As shown, according to some embodiments, a thin film transistor array 300 and a second substrate 302 are both disposed on the second surface 202b of the first substrate 202. Contact pads 304 disposed between the thin film transistor array 300 and the vias 210 electrically connect the thin film transistor array 300 to the light-emitting element 100 located on the first surface 202a. In this embodiment, the number of contact pads 304 exceeds the number of corresponding vias 210 or conductive lines in the same cross-section. It should be understood that each contact pad 304 may have a corresponding circuit and be electrically connected to a conductive line or conductive layer in the corresponding circuit. However, the perspective shown in the figures does not fully capture this information. For example, the vias 210 or conductive lines may extend along the Y-axis within the first substrate 202 and then extend in the Z-direction. Therefore, the positions of the signal input and output points are not limited to the same cross-section as the vias 210.

[0149] In addition, if Figure 6 As shown, according to some embodiments, the thin film transistor array 300-1 and the thin film transistor array 300-2 can be disposed on different second substrates 302-1 and 302-2, respectively, and the thin film transistor array 300-1 and the thin film transistor array 300-2 are used to drive different portions of the light-emitting element 100. Furthermore, according to some embodiments, the total area of ​​the second substrate 302-1 and the second substrate 302-2 is less than the area of ​​the first substrate 202. The definitions of the area of ​​the first substrate 202 and the areas of the second substrates 302-1 and 302-2 are the same as described above and will not be repeated here.

[0150] According to some embodiments, the electronic device 10B may further include a protective layer 308, which may cover the thin-film transistor array 300 and the second substrate 302. According to some embodiments, the protective layer 308 is also disposed between the first substrate 202 and the thin-film transistor array 300 and between the contact pads 304. According to some embodiments, the protective layer 308 can reduce the risk of moisture in the environment affecting the thin-film transistor array 300 or the contact pads 304, thereby causing corrosion.

[0151] According to some embodiments, the protective layer 308 may include an organic material, an inorganic material, other suitable packaging materials, or a combination thereof, but is not limited thereto. According to some embodiments, the inorganic material may include silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, or other suitable materials, but is not limited thereto. According to some embodiments, the organic material may include epoxy resin, silicone resin, acrylic resin (e.g., polymethyl methacrylate, benzocyclobutene, polyimide, copolyester, polydimethylsiloxane, tetrafluoroethylene-perfluoroalkoxy vinyl ether copolymer), other suitable materials, or a combination thereof, but is not limited thereto.

[0152] Furthermore, according to some embodiments, the electronic device 10B can serve as a backlight module. The electronic device 10B can further include a panel 500 and an optical film layer 502 disposed above the light-emitting element 100. According to some embodiments, the panel 500 can include an upper substrate, a lower substrate, and a display medium layer (not shown). The display medium layer can include liquid crystal, wherein the liquid crystal can include twisted nematic (TN) liquid crystal, super twisted nematic (STN) liquid crystal, vertical alignment (VA) liquid crystal, in-plane switching (IPS) liquid crystal, cholesteric liquid crystal, fringe field switching (FFS) liquid crystal, other suitable liquid crystal materials, or combinations thereof, but not limited thereto. According to some embodiments, the optical film layer 502 can include a diffuser film, a brightness enhancement film, a prism sheet, a dual brightness enhancement film (DBEF), other suitable functional optical films, or combinations thereof, but not limited thereto.

[0153] Next, please refer to Figure 7 , Figure 7 The following is a schematic diagram showing a partial cross-sectional structure of an electronic device 10C according to some other embodiments of the present invention. Figure 7 As shown, according to some embodiments, the thin film transistor array 300 and the second substrate 302 are also arranged on the second surface 202b of the first substrate 202. The thin film transistor array 300 can be electrically connected to the light-emitting component 100 located on the first surface 202a through the conductive film layer 220 arranged on the side surface 202s of the first substrate 202, and there is no need to additionally set up a guide hole structure.

[0154] Specifically, according to some embodiments, the conductive film layer 220 may extend over the second surface 202b, the side surface 202s, and the first surface 202a of the first substrate 202. According to some embodiments, a portion of the conductive film layer 220 is disposed between the contact pad 304 and the first substrate 202. Furthermore, according to some embodiments, the conductive film layer 220 extending over the first surface 202a may be electrically connected to the contact pad 106 of the light-emitting device 100 via a conductive trace (not shown) disposed on the first surface 202a.

[0155] According to some embodiments, the conductive film layer 220 is flexible. According to some embodiments, the conductive film layer 220 may include a base layer (not shown) and a conductive layer (not shown) formed on the base layer. According to some embodiments, the base layer may be made of polyimide (PI) or other suitable flexible materials, but is not limited thereto. According to some embodiments, the conductive film layer 220 may be a flexible printed circuit (FPC) board or a chip on film (COF) package, but is not limited thereto.

[0156] According to some embodiments, the coefficient of thermal expansion (CTE) of the conductive film layer 220 is between the CTE of the first substrate 202 and the CTE of the second substrate 302, or is substantially the same as the CTE of the second substrate 302, thereby reducing the impact of stress changes caused by thermal expansion and contraction. According to some embodiments, the CTE of the conductive film layer 220 is between the CTE of glass and the CTE of polyimide, or is substantially the same as the CTE of polyimide.

[0157] Next, please refer to Figure 8 , Figure 8 The following is a schematic diagram showing a partial cross-sectional structure of an electronic device 10D according to some other embodiments of the present invention. Figure 8 As shown, according to some embodiments, the thin film transistor array 300 and the second substrate 302 are disposed on the first surface 202 a of the first substrate 202 , that is, the light emitting element 100 and the second substrate 302 are disposed on the same side of the first substrate 202 .

[0158] According to some embodiments, the thin film transistor array 300 and the second substrate 302 are disposed between the plurality of light emitting elements 100. Specifically, according to some embodiments, the thin film transistor array 300 and the second substrate 302 are disposed at a pitch 100P (see Figure 11 The thin film transistor array 300 can be electrically connected to the light emitting element 100 via the contact pads 304 and the conductive lines (not shown) disposed on the first surface 202a of the first substrate 202, without the need for additional structures such as guide holes and conductive film layers.

[0159] Next, please refer to Figure 9 as well as Figure 10 , Figure 9 as well as Figure 10 Schematic diagrams of partial cross-sectional structures of the packaging structure of the thin film transistor array 300 are shown respectively according to some embodiments of the present invention. Figure 9 as well as Figure 10As shown, according to some embodiments, the thin film transistor array 300 and the second substrate 302 may be firstly processed by a packaging process to form a thin film transistor array package 300K electrically connected to the light emitting device 100 .

[0160] like Figure 9 As shown, according to some embodiments, the thin film transistor array package 300K can be packaged by wire bonding. According to some embodiments, the thin film transistor array package 300K can include a package substrate 302P, a solder material 300B, and metal wires 300L. The thin film transistor array 300 and the second substrate 302 can be fixed to the package substrate 302P by the solder material 300B, and the thin film transistor array 300 can be electrically connected to the package substrate 302P and to the contact pads 304 by the metal wires 300L.

[0161] According to some embodiments, the material of the package substrate 302P may include, but is not limited to, ceramic, a printed circuit board (PCB), a flexible printed circuit board (FPC), a leadframe, other suitable package substrates, or combinations thereof. According to some embodiments, the solder material 300B may include, but is not limited to, tin, aluminum, a tin alloy, an aluminum alloy, other suitable solder materials, or combinations thereof. According to some embodiments, the material of the metal wire 300L may include, but is not limited to, copper, aluminum, molybdenum, silver, tin, tungsten, gold, chromium, nickel, platinum, copper alloys, aluminum alloys, molybdenum alloys, silver alloys, tin alloys, tungsten alloys, gold alloys, chromium alloys, nickel alloys, platinum alloys, other suitable metal materials, or combinations thereof. In addition, according to some embodiments, the thin film transistor array package 300K further includes a protective layer 308. The protective layer 308 may serve as an encapsulation material, covering the thin film transistor array 300, the second substrate 302, the solder material 300B, and the metal wire 300L.

[0162] Furthermore, if Figure 10 As shown, according to some embodiments, the thin film transistor array package 300K can be packaged in a flip-chip manner. In this embodiment, the solder material 300B can be fixed to the package substrate 302P in the form of solder balls, for example, a ball grid array package can be used for packaging.

[0163] Furthermore, it should be understood that although Figure 9 and Figure 10 The illustrated thin film transistor array package 300K includes a package substrate 302P. However, according to some embodiments, a conductive film layer may be used instead of the package substrate 302P, and the present invention is not limited thereto.

[0164] Next, please refer to Figure 11 , Figure 11 The top view of the electronic device 10D according to some embodiments of the present invention is shown. Specifically, Figure 11 The configuration relationship between the thin film transistor array 300 and the light emitting element 100 disposed on the first surface 202a of the first substrate 202 is shown. It should be understood that for the sake of clarity, Figure 11 Only the aforementioned components are shown, and other components are omitted.

[0165] Figure 11 for Figure 8 A top view of Figure 8 and Figure 11 As shown, according to some embodiments, the thin film transistor array 300, the second substrate 302, and the light-emitting components 100 are all disposed on the first surface 202a of the first substrate 202, and the thin film transistor array 300 and the second substrate 302 can be disposed between the light-emitting components 100. According to some embodiments, the thin film transistor array 300 can drive the light-emitting components 100 connected in series to improve the efficiency of driving the array. According to some embodiments, the thin film transistor array 300 can be arranged within the pitch 100P of the light-emitting components 100. According to some embodiments, in the connection direction of the two light-emitting components 100 (e.g., the X direction or the Y direction shown in the figure), the maximum width of the thin film transistor array 300 is less than or equal to the distance of the pitch 100P of the light-emitting components 100. In this embodiment, the bonding process of the thin film transistor array 300 and the light emitting element 100 can be performed on the same surface of the first substrate 202. For example, the thin film transistor array 300 and the light emitting element 100 can be fixed on the first surface 202a of the first substrate 202, without having to perform the bonding process on the first surface 202a and the second surface 202b of the first substrate 202 respectively, thereby simplifying the process.

[0166] According to some embodiments, the pitch 100P of the light-emitting components 100 extending along the X direction may be the same as the pitch 100P of the light-emitting components 100 extending along the Y direction. According to other embodiments, the pitch (not shown) of the light-emitting components 100 extending along the X direction may be different from the pitch (not shown) of the light-emitting components 100 extending along the Y direction.

[0167] Furthermore, according to some embodiments, the conductive circuit 354 may be disposed on the first substrate 202 to connect the thin film transistor array 300 and the light emitting element 100 , so that the thin film transistor array 300 and the light emitting element 100 are electrically connected to each other.

[0168] According to some embodiments, the thickness T of the second substrate 302 is less than or equal to 5 millimeters (mm), wherein the thickness T of the second substrate 302 may be less than or equal to 4 millimeters (mm), less than or equal to 3 millimeters (mm), less than or equal to 2 millimeters (mm), or less than or equal to 1 millimeter (mm). According to some embodiments, the second substrate 302 may have a single-layer structure or a multi-layer structure. The second substrate 302 may have a multi-layer structure composed of the same material or a multi-layer structure composed of different materials, but is not limited thereto. For example, the second substrate 302 may have a double-layer structure, where the first layer may be made of glass and the second layer may be made of polyimide (PI). The glass may serve as a carrier, facilitating the placement of circuits or electronic components on the polyimide (PI). On the other hand, due to the different coefficients of thermal expansion (CTE) between the first substrate 202 and the second substrate 302, the second substrate 302 may crack. The double-layer design of the second substrate 302 can reduce the possibility of cracking.

[0169] Next, please refer to Figure 12 , Figure 12 The following is a schematic diagram showing a partial cross-sectional structure of an electronic device 10E according to some other embodiments of the present invention. Figure 12 As shown, according to some embodiments, the electronic device 10E may further include a reflective layer 300R disposed on the thin film transistor array 300 and the second substrate 302 . The reflective layer 300R may increase the light utilization efficiency of the light emitting element 100 .

[0170] According to some embodiments, the reflective layer 300R may include a material with high reflectivity (e.g., a reflectivity between 70% and 99%). According to some embodiments, the material with high reflectivity may include silver, aluminum, titanium, titanium dioxide, other suitable reflective materials, or a combination thereof, but is not limited thereto. According to some embodiments, the reflective layer 300R may include white ink, white tape, or white photoresist, but is not limited thereto. According to some embodiments, the reflective layer 300R may be directly formed on or attached to the second substrate 302. Furthermore, according to some embodiments, the reflective layer 300R may substantially completely cover the thin film transistor array 300, the second substrate 302, and the contact pads 304, thereby further reducing the risk of corrosion caused by moisture or oxygen in the environment affecting the thin film transistor array 300 or the contact pads 304, thereby providing a protective function.

[0171] In addition, if Figure 12As shown, according to some embodiments, the light-emitting component 100 may have a single light-emitting unit 104, and the light-emitting unit 104 may emit light of a single color, such as blue light. According to some embodiments, the optical film layer 502 may further include sub-layers 502a, 502b, and 502c. According to some embodiments, the sub-layer 502a may include a brightness enhancement film, a prism sheet, a reflective brightness enhancement film (DBEF), other suitable functional optical films, or a combination thereof, but not limited thereto. According to some embodiments, the sub-layer 502b may include a wavelength conversion film, but not limited thereto. According to some embodiments, the sub-layer 502c may include a diffusion film, but not limited thereto. It should be understood that the number and arrangement of the sub-layers of the optical film layer 502 are not limited to those shown in the figure. According to different embodiments, the appropriate number of sub-layers may be adjusted as needed and arranged in a suitable manner.

[0172] According to some embodiments, the material of the light conversion film layer may include, but is not limited to, QDs, fluorescent materials, and phosphorescent materials. According to some embodiments, the light emitting unit 104 emits blue light, but the wavelength conversion film in the optical film layer 502 can convert the blue light generated by the light emitting unit 104 into light having a specific wavelength range (specific color), such as red, green, yellow, or white light, but the present invention is not limited thereto.

[0173] Next, please refer to Figure 13 , Figure 13 Shown is a partial cross-sectional structural diagram of an electronic device 10F according to some other embodiments of the present invention. Figure 13 As shown, according to some embodiments, the light-emitting component 100 may not include the intermediate substrate 102, and the light-emitting unit 104 may directly contact the contact pad 106. According to some embodiments, the thin-film transistor array 300 may also directly contact the contact pad 304, without the additional second substrate 302. This configuration can further reduce the overall thickness of the electronic device 10F or save production costs.

[0174] Next, please refer to Figure 14 , Figure 14 The following is a schematic diagram showing a partial cross-sectional structure of an electronic device 10G according to some other embodiments of the present invention. Figure 14As shown, according to some embodiments, the light-emitting unit 104 includes a light-emitting sub-unit 104a, a light-emitting sub-unit 104b, and a light-emitting sub-unit 104c. The light-emitting sub-units 104a, 104b, and 104c may be disposed on the same intermediate substrate 602. The electronic device 10G may further include a jumper pad 250. The jumper pad 250 may be disposed on the intermediate substrate 602 and between two adjacent light-emitting units 104. The jumper pad 250 may be electrically connected to a via 210 penetrating the intermediate substrate 602 and the adhesive layer 604, and to a via 210 penetrating the first substrate 202. According to some embodiments, signals from the thin-film transistor array 300 may be transmitted to the jumper pad 250 via the via 210 and the interconnect structure 210L. According to some embodiments, the jumper pad 250 may aggregate signals and transmit the signals to the multiple light-emitting units 104 electrically connected thereto.

[0175] According to some embodiments, the material of the intermediate substrate 602 may be the same as or similar to the material of the aforementioned intermediate substrate 102, and will not be repeated here. According to some embodiments, the material of the adhesive layer 604 may include any suitable material having adhesive properties. According to some embodiments, the material of the adhesive layer 604 may include a light-curing adhesive, a heat-curing adhesive, a light-heat-curing adhesive, other suitable materials, or a combination thereof, but is not limited thereto. For example, according to some embodiments, the adhesive layer 604 may include an optical clear adhesive (OCA), an optical clear resin (OCR), a pressure sensitive adhesive (PSA), other suitable adhesive materials, or a combination thereof, but is not limited thereto.

[0176] According to some embodiments, the material of the bridge pad 250 may include a metallic conductive material, a transparent conductive material, or a combination thereof. For example, the metallic conductive material may include, but is not limited to, copper, aluminum, molybdenum, silver, tin, tungsten, gold, chromium, nickel, platinum, copper alloys, aluminum alloys, molybdenum alloys, silver alloys, tin alloys, tungsten alloys, gold alloys, chromium alloys, nickel alloys, platinum alloys, other suitable metallic materials, or a combination thereof. The transparent conductive material may include, for example, a transparent conductive oxide (TCO). For example, the transparent conductive oxide may include, but is not limited to, indium tin oxide (ITO), tin oxide (SnO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), antimony tin oxide (ATO), antimony zinc oxide (AZO), other suitable transparent conductive materials, or a combination thereof.

[0177] Furthermore, according to some embodiments, the conductive material in the guide via 210 may be filled via an electroplating process or a soldering process. For example, according to some embodiments, the guide via 210 contacting the bridge pad 250 may be formed via a soldering process (e.g., filling with solder paste), or the guide via 210 in the first substrate 202 may be formed via an electroplating process. Alternatively, when the first substrate 202 has a multi-layer structure (not shown), the guide via 210 and the circuit may be formed via photolithography, etching, or electroplating. In some embodiments, a portion of the guide via 210 may be located on one layer of the first substrate 202, while another portion of the guide via 210 may be located on another layer of the first substrate 202 (not shown). However, the present invention is not limited thereto.

[0178] like Figure 14 As shown, according to some embodiments, the electronic device 10G may further include a test pad 260. The test pad 260 can be used to test whether the electrical connection or brightness of the light-emitting unit 104 is normal. The material of the test pad 260 can be the same as or similar to that of the bridge pad 250, and will not be further described here. According to some embodiments, the electronic device 10G may not include the test pad 260.

[0179] Furthermore, according to some embodiments, the electronic device 10G may further include a light absorbing layer 270, a light extraction layer 150, and a protective layer 152. The light absorbing layer 270 may cover the test pad 260, the light extraction layer 150 may cover the light emitting unit 104, and the light absorbing layer 270 may contact a portion of the light extraction layer 150 and the bridging pad 250. According to some embodiments, the protective layer 152 may be disposed on the light absorbing layer 270 and the bridging pad 250. The protective layer 152 may reduce the chance of moisture in the environment affecting the bridging pad 250 or the light emitting unit 104, thereby improving the reliability of the electronic device 10G. According to some embodiments, the top surface of the protective layer 152 may be substantially flush with the top surface of the light extraction layer 150. According to other embodiments, the top surface of the protective layer 152 may be higher than the top surface of the light extraction layer 150, or, according to some embodiments, the protective layer 152 and the light extraction layer 150 may be disposed selectively.

[0180] According to some embodiments, the light absorbing layer 270 can absorb at least a portion of the interfering light, reduce the impact of the interfering light on the image, and improve the contrast or brightness of the light emitting unit 104. According to some embodiments, the material of the light absorbing layer 270 can include a highly absorbent material, a low reflective material, or a combination thereof, but is not limited thereto. According to some embodiments, the material of the light absorbing layer 270 can include particles, coatings, adhesives, other suitable materials, or a combination thereof, but is not limited thereto. According to some embodiments, the light absorbing layer 270 can include a black organic material, a black inorganic material, polyethylene terephthalate, black ink, black tape, other suitable materials, or a combination thereof, but is not limited thereto.

[0181] Furthermore, according to some embodiments, the materials of the light extraction layer 150 and the protective layer 152 may be the same as or similar to the materials of the aforementioned protective layer 108, and will not be repeated here. According to some embodiments, the refractive index of the light extraction layer 150 ranges from 1 to 2.4 (i.e., 1≤the refractive index of the light extraction layer 150≤2.4), or between 1.2 and 2.2, or between 1.5 and 2.0. According to some embodiments, the refractive index of the protective layer 152 ranges from 1 to 2.4 (i.e., 1≤the refractive index of the protective layer 152≤2.4), or between 1.2 and 2.2, or between 1.5 and 2.0. It is worth noting that, according to some embodiments, when the refractive index of the protective layer 152 ranges from 1 to 2.4, the light extraction efficiency of the light-emitting component 100 can be increased or the total reflection can be reduced. According to some embodiments, the refractive index of the light extraction layer 150 is substantially the same as the refractive index of the protective layer 152.

[0182] In summary, the electronic device provided by the present invention includes a light-emitting element and a thin-film transistor array disposed on separate substrates. This allows the thin-film transistor array and the light-emitting element to be independently selected in terms of substrate material and manufacturing process, thereby improving process yield, product reliability, and reducing production costs. Furthermore, according to some embodiments, the substrate on which the thin-film transistor array is mounted can be smaller than the substrate on which the light-emitting element is mounted. This increases the space available for electrical connection between the thin-film transistor array and the light-emitting element (e.g., increasing the connection space and the number of contacts).

[0183] Although the embodiments of the present invention and their advantages have been disclosed as above, it should be understood that any person skilled in the art may make changes, substitutions and modifications without departing from the spirit and scope of the present invention. The features between the embodiments of the present invention can be mixed and matched as needed as long as they do not violate the spirit of the invention or conflict with each other. In addition, the scope of protection of the present invention is not limited to the processes, machines, manufacturing, material compositions, devices, methods and steps in the specific embodiments described in the specification. Any person skilled in the art can understand from the disclosure of the present invention that the processes, machines, manufacturing, material compositions, devices, methods and steps currently or in the future developed can be used according to the present invention as long as they can implement substantially the same functions or obtain substantially the same results in the embodiments described herein. Therefore, the scope of protection of the present invention includes the above-mentioned processes, machines, manufacturing, material compositions, devices, methods and steps. The scope of protection of the present invention shall be subject to the definition of the appended claims. Any embodiment or claim of the present invention is not required to achieve all the purposes, advantages and features disclosed in the present invention.

Claims

1. An electronic device, characterized in that: include: a first substrate comprising a first surface; A plurality of light-emitting components are disposed on the first surface of the first substrate, including: a contact pad; an intermediate substrate disposed on the contact pads; and a light-emitting unit disposed on the intermediate substrate, wherein the light-emitting unit includes a first light-emitting sub-unit, a second light-emitting sub-unit, and a third light-emitting sub-unit, and the first light-emitting sub-unit, the second light-emitting sub-unit, and the third light-emitting sub-unit have a common electrode; a protective layer disposed above the intermediate substrate and covering the first light-emitting sub-unit, the second light-emitting sub-unit, the third light-emitting sub-unit, and the common electrode, wherein a side surface of the protective layer is flush with a side surface of the intermediate substrate; a second substrate comprising a second surface; a first thin film transistor array, disposed on the second surface of the second substrate, for driving at least a portion of the plurality of light-emitting components; and a second thin film transistor array, wherein the plurality of light-emitting elements, the first thin film transistor array, and the second thin film transistor array are disposed on different substrates, and the first thin film transistor array and the second thin film transistor array are used to drive different portions of the plurality of light-emitting elements, The plurality of light-emitting components and the first thin-film transistor array are disposed on different substrates, and the light-emitting unit is electrically connected to the contact pad via a via penetrating the intermediate substrate, and the first surface has a first area, and the second surface has a second area, and the first area is larger than the second area.

2. The electronic device according to claim 1, wherein The plurality of light-emitting components include light-emitting diode packages, light-emitting diode chips, or a combination thereof.

3. The electronic device according to claim 1, wherein: The plurality of light emitting components are arranged in an array.

4. The electronic device according to claim 1, wherein: The second thin film transistor array is disposed on a third substrate, and the total area of ​​the second substrate and the third substrate is smaller than the area of ​​the first substrate.

5. The electronic device according to claim 4, wherein: The first thin film transistor array is electrically connected to the second thin film transistor array.

6. The electronic device according to claim 4, wherein: The first thin film transistor array is not electrically connected to the second thin film transistor array.

7. The electronic device according to claim 1, wherein: The plurality of light-emitting components and the second substrate are disposed on different sides of the first substrate.

8. The electronic device according to claim 1, wherein: The plurality of light-emitting components and the second substrate are disposed on the same side of the first substrate.

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