Die-bonding film

Abstract

The present invention relates to a dicing die bonding film. The dicing die bonding film of the present invention comprises a dicing tape having an adhesive layer laminated on a base layer, and a die bonding layer laminated on the adhesive layer of the dicing tape, wherein the Hansen solubility parameter distance Ra of the dicing die bonding film is greater than or equal to 3 and less than or equal to 14, and the Hansen solubility parameter distance Ra is obtained by using the Hansen solubility parameter (δ dA , δ pA , δ hA ) and the Hansen solubility parameter (δ dD , δ pD , δ hD ) is calculated.

Description

[0001] Cross-references to related applications

[0002] This application claims the priority of Japanese Patent Application No. 2019-230419, which is incorporated by reference into the description of the present application specification. Technical Field

[0003] The present invention relates to a dicing die-bonding film. Background Art

[0004] Conventionally, it is known that a dicing die-bonding film is used to obtain a semiconductor chip for die bonding in the production of a semiconductor device.

[0005] The dicing die-bonding film includes a dicing tape in which an adhesive layer is laminated on a base layer, and a die-bonding layer laminated on the adhesive layer of the dicing tape in a releasable manner.

[0006] Furthermore, as a method for obtaining a semiconductor chip (Die) for chip bonding using the aforementioned cutting chip bonding film, a method having the following steps is known: a half-cutting step of forming a groove on a semiconductor wafer to be processed into a chip (Die) by cutting the semiconductor wafer; a back grinding step of grinding the semiconductor wafer after the half-cutting step to reduce the thickness; a mounting step of attaching one side of the semiconductor wafer after the back grinding step (for example, the side opposite to the circuit side) to the chip bonding layer and fixing the semiconductor wafer to the cutting tape; an expansion step of enlarging the interval between the semiconductor chips processed by half-cutting; a cut maintaining step of maintaining the interval between the semiconductor chips; a picking-up step of peeling off the chip bonding layer and taking out the semiconductor chip in a state where the chip bonding layer is attached; and a chip bonding step of bonding the semiconductor chip in a state where the chip bonding layer is attached to an adherend (for example, a mounting substrate, etc.).

[0007] It should be noted that in the aforementioned cut maintaining process, hot air (e.g. 100-130°C) is blown onto the dicing tape to cause thermal shrinkage (after thermal shrinkage), and then the dicing tape is cooled and solidified to maintain the distance (cut) between adjacent semiconductor chips being cut.

[0008] Furthermore, in the expansion step, the die bonding layer is cut into a size corresponding to the size of the plurality of singulated semiconductor chips.

[0009] However, after the die bonding layer is separated into pieces, chip lifting may occur in which the outer peripheral portion of the semiconductor chip with the die bonding layer bulges from the surface of the adhesive layer.

[0010] In order to suppress such chip floating, for example, Patent Document 1 describes the use of a dicing tape having specific properties.

[0011] The invention describes in detail the use of a dicing tape having a stress relaxation rate of 45% or more after 1000 seconds after being stretched 30% at 23°C in at least one direction, and a stress value of 4 MPa or less after 1000 seconds after being stretched 30% at 23°C in at least one direction.

[0012] Prior art literature

[0013] Patent Literature

[0014] Patent Document 1: Japanese Patent Application Publication No. 2019-16633 Summary of the invention

[0015] Problem that the invention aims to solve

[0016] However, it can be said that sufficient research has not yet been conducted on the suppression of chip floating that occurs after the chip bonding layer is singulated.

[0017] Furthermore, as described above, although the die bonding layer is peeled off (cut off) from the adhesive layer in the pickup step, the die bonding layer and the adhesive layer are in contact with each other before the pickup step.

[0018] Therefore, sometimes the components contained in the aforementioned chip bonding layer are transferred to the aforementioned adhesive layer, or the components contained in the aforementioned adhesive layer are transferred to the aforementioned chip bonding layer. In this way, if the component transfer occurs between the aforementioned chip bonding layer and the aforementioned adhesive layer, the aforementioned chip bonding layer and the aforementioned adhesive layer sometimes no longer meet the properties required by each other, so it is not preferred.

[0019] However, it can be said that sufficient research has not yet been conducted on suppressing component migration between the die-bonding layer and the adhesive layer.

[0020] Therefore, an object of the present invention is to provide a dicing die bond film capable of relatively suppressing chip floating that occurs after the die bond layer is singulated and relatively suppressing component migration between the die bond layer and the adhesive layer.

[0021] Solutions for solving problems

[0022] The dicing die bonding film of the present invention comprises:

[0023] A dicing tape having an adhesive layer laminated on a base material layer; and

[0024] a die bonding layer laminated on the adhesive layer of the dicing tape,

[0025] The Hansen solubility parameter distance Ra of the dicing die bonding film is greater than or equal to 3 and less than or equal to 14, wherein the Hansen solubility parameter distance Ra is a distance between the Hansen solubility parameter (δ dA , δ pA , δ hA ) and the Hansen solubility parameter (δ dD , δ pD , δ hD ) and calculated using the following formula (1).

[0026] Ra=[4(δ dD -δ dA ) 2 +(δ pD -δ pA ) 2 +(δhD-δh A ) 2 ] 1 / 2 …(1)

[0027] (where δ dD and δ dA is the dispersion term, δ pD and δ pA is the polar term, δ hD and δ hA is the hydrogen bond term)

[0028] The dicing die-bonding film is preferably:

[0029] The dispersion term δ of the Hansen solubility parameter of the aforementioned adhesive layer is dA The value of is related to the dispersion term δ of the Hansen solubility parameter of the aforementioned chip bonding layer dD The absolute value of the difference between the values ​​of is greater than or equal to 0.4 and less than or equal to 3.0.

[0030] The dicing die-bonding film is preferably:

[0031] The polar term δ of the Hansen solubility parameter of the aforementioned adhesive layer is pA The value of is related to the polar term δ of the Hansen solubility parameter of the aforementioned chip bonding layer pD The absolute value of the difference is 1.5 or more and 10.0 or less.

[0032] The dicing die-bonding film is preferably:

[0033] The hydrogen bonding term δ of the Hansen solubility parameter of the aforementioned adhesive layer is hA The value of the hydrogen bonding term δ of the Hansen solubility parameter of the aforementioned chip bonding layer hD The absolute value of the difference between the values ​​of is greater than or equal to 0.5 and less than or equal to 6.5.

[0034] The peeling force of the die bond layer with respect to the pressure-sensitive adhesive layer is preferably 0.5 N / 20 mm or more. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 It is a cross-sectional view showing the structure of a dicing die-bonding film according to one embodiment of the present invention.

[0036] Figure 2A This is a cross-sectional view schematically showing a state of half-cutting processing in a method of manufacturing a semiconductor integrated circuit.

[0037] Figure 2B This is a cross-sectional view schematically showing a state of half-cutting processing in a method of manufacturing a semiconductor integrated circuit.

[0038] Figure 2C It is a cross-sectional view schematically showing a backside grinding process in a method of manufacturing a semiconductor integrated circuit.

[0039] Figure 2D It is a cross-sectional view schematically showing a backside grinding process in a method of manufacturing a semiconductor integrated circuit.

[0040] Figure 3A It is a cross-sectional view schematically showing a mounting step in a method of manufacturing a semiconductor integrated circuit.

[0041] Figure 3B It is a cross-sectional view schematically showing a mounting step in a method of manufacturing a semiconductor integrated circuit.

[0042] Figure 4A It is a cross-sectional view schematically showing a state of a low-temperature expansion step in a method of manufacturing a semiconductor integrated circuit.

[0043] Figure 4B It is a cross-sectional view schematically showing a state of a low-temperature expansion step in a method of manufacturing a semiconductor integrated circuit.

[0044] Figure 4C It is a cross-sectional view schematically showing a state of a low-temperature expansion step in a method of manufacturing a semiconductor integrated circuit.

[0045] Figure 5A It is a cross-sectional view schematically showing a state of an expansion process at room temperature in a method for manufacturing a semiconductor integrated circuit.

[0046] Figure 5B It is a cross-sectional view schematically showing a state of an expansion process at room temperature in a method for manufacturing a semiconductor integrated circuit.

[0047] Figure 6This is a cross-sectional view schematically showing a state of a cutout maintaining step in a method of manufacturing a semiconductor integrated circuit.

[0048] Figure 7 It is a cross-sectional view schematically showing a pickup process in a method of manufacturing a semiconductor integrated circuit.

[0049] Description of Reference Numerals

[0050] 1. Substrate layer

[0051] 2 Adhesive layer

[0052] 3. Chip bonding layer

[0053] 10 Cutting tape

[0054] 20 Cutting die bonding film

[0055] G Back Grinding Tape

[0056] H retainer

[0057] J Suction fixture

[0058] P pin component

[0059] R cutting ring

[0060] T Wafer Processing Tape

[0061] U lifting member

[0062] W Semiconductor Wafer DETAILED DESCRIPTION

[0063] Hereinafter, one embodiment of the present invention will be described.

[0064] [Dicing Die Bonding Film]

[0065] like Figure 1 As shown, the dicing die-bonding film 20 according to the present embodiment includes a dicing tape 10 in which an adhesive layer 2 is laminated on a base layer 1 , and a die-bonding layer 3 laminated on the adhesive layer 2 of the dicing tape 10 .

[0066] In the dicing die-bonding film 20 , a semiconductor wafer is attached to the die-bonding layer 3 .

[0067] When the semiconductor wafer is cut using the dicing die-bonding film 20, the die-bonding layer 3 is also cut together with the semiconductor wafer. The die-bonding layer 3 is cut into a size corresponding to the size of the plurality of singulated semiconductor chips. Thus, semiconductor chips with the die-bonding layer 3 can be obtained.

[0068] The Hansen solubility parameter distance Ra of the dicing die bonding film 20 according to the present embodiment is 3 or more and 14 or less. The Hansen solubility parameter distance Ra is a distance between the Hansen solubility parameter (δ dA , δ pA , δ hA ) and the Hansen solubility parameter (δ dD , δ pD , δ hD ) and calculated using the following formula (1).

[0069] Ra=[4(δ dD -δ dA ) 2 +(δ pD -δ pA ) 2 +(δ hD -δ hA ) 2 ] 1 / 2 …(1)

[0070] (where δ dD and δ dA is the dispersion term, δ pD and δ pA is the polar term, δ hD and δ hA is the hydrogen bond term)

[0071] The Hansen solubility parameter divides the Hildebrand solubility parameter into three components: a dispersion term, a polar term, and a hydrogen bonding term. The dispersion term, the polar term, and the hydrogen bonding term can be expressed by three-dimensional coordinates. For example, when evaluating the mutual solubility (compatibility) of component A and component B, if the three-dimensional coordinates of component A and component B are in a positional relationship of proximity, it is judged that the compatibility is high, and if the three-dimensional coordinates of component A and component B are in a positional relationship of distance, it is judged that the compatibility is low. That is, the smaller the value of the Hansen solubility parameter distance Ra calculated using the above formula (1), the higher the compatibility of component A and component B is judged to be, and the larger the value of Ra, the lower the compatibility of component A and component B is judged to be.

[0072] It should be noted that the aforementioned dispersion term is a term related to the van der Waals force, the aforementioned polar term is a term related to the dipole moment, and the aforementioned hydrogen bond term is a term related to hydrogen bonding.

[0073] The dispersion term δ in the Hansen solubility parameter of the adhesive layer 2 dA , polar term δ pA and the hydrogen bond term δ hA , and the dispersion term δ in the Hansen solubility parameter of the chip bonding layer 3dD , polar term δ pD and the hydrogen bond term δ hD The Hansen Solubility sphere method can be used to determine the value using three-dimensional coordinates.

[0074] The three-dimensional coordinates (δ dA , δ pA , δ hA ) can be calculated using the Hansen dissolving sphere method as follows.

[0075] (1) As a sample for evaluation, a part of the pressure-sensitive adhesive layer 2 was taken out from the dicing die-bonding film 20 so as not to be mixed with the die-bonding layer 3 and the base material layer 1 .

[0076] (2) The evaluation sample (the adhesive layer 2 taken out) is added to the evaluation solvent in a manner to achieve a concentration of 0.5 mg / mL. As the evaluation solvent, a solvent with a known Hansen solubility parameter, that is, a solvent with known values ​​of the dispersion term, polar term, and hydrogen bond term is used. In the present embodiment, as such a solvent, acetone, toluene, ethyl acetate, ethanol, chloroform, dimethyl sulfoxide, N-methylformamide, N,N-dimethylformamide, N-methylpyrrolidone, γ-butyrolactone, 1,1,2,2-tetrabromoethane, 1-butanol, 4-methyl-2-pentanone, 2-propanol, cyclohexane, formamide, 2-methoxyethanol, acetic acid, benzyl alcohol, ethanolamine, methyl ethyl ketone, methylcyclohexane, tetrahydrofuran, aniline, 1,4-dioxane, salicylaldehyde, and ethylene glycol are used.

[0077] That is, the evaluation samples were added to the above-mentioned respective evaluation solvents.

[0078] (3) After standing for 24 hours at room temperature (23±2° C.) under light-shielding conditions without impregnation or stirring of each evaluation solvent to which the evaluation sample was added, the degree of swelling of the evaluation sample in each evaluation solvent was evaluated.

[0079] (4) Using the analysis software "Hansen Solubility Parameter in Practice (HSPiP) Ver.4", the Hansen solubility parameters (dispersion term, polar term and hydrogen bonding term) of each of the above-mentioned evaluation solvents were plotted in three-dimensional space with coordinates (δ d , δ p , δ h ) to draw points.

[0080] (5) Based on the evaluation results of the state of the evaluation samples in the above-mentioned evaluation solvents, the good solvent and the poor solvent for the adhesive layer 2 are determined, and the results are input into the analysis software "HSPiP" in the form of scores. Using the analysis software "HSPiP", a Hansen solubility sphere is prepared in such a way that the good solvent is on the inside and the poor solvent is on the outside. In addition, the center coordinates of the aforementioned Hansen solubility sphere are calculated and used as the Hansen solubility parameter (δ dA , δ pA , δ hA ).

[0081] In addition, the determination of a good solvent and a poor solvent is based on the following score.

[0082] Score 1

[0083] The evaluation sample exists in a state of being swollen with a swelling ratio Sr exceeding 55%, or the evaluation sample exists in a state of being completely dissolved in the evaluation solvent, or the evaluation sample exists in a state of being broken into pieces of substantially the same size in the evaluation solvent.

[0084] It should be noted that the swelling ratio Sr refers to the following numerical value: the maximum diameter of the evaluation sample before adding a solvent is measured (for example, the major diameter is measured in the case of an elliptical shape, and the diameter is measured in the case of a circular shape), and after adding a solvent and letting it stand, the degree of increase in the maximum diameter is calculated, thereby obtaining a value.

[0085] That is, the swelling ratio Sr is calculated using the following formula.

[0086] Sr (%) = [(maximum diameter of the evaluation sample after adding the solvent and leaving it to stand) - (maximum diameter of the evaluation sample before adding the solvent)] / (maximum diameter of the evaluation sample before adding the solvent) × 100

[0087] Score 2

[0088] The evaluation sample exists in a state where it is swollen with a swelling ratio Sr of 20% or more and 55% or less (swelling is confirmed in the evaluation sample, but the degree is not large), or the evaluation sample is in a state where a part of it is obviously dissolved but not completely dissolved, or the evaluation sample exists in a state where it is only partially fragmented in the evaluation solvent.

[0089] Score 0

[0090] The evaluation sample exists in a state where it is swollen at a swelling ratio Sr exceeding 0% and less than 20% (swelling is hardly confirmed visually in the evaluation sample), or the evaluation sample is not dissolved at all in the evaluation solvent.

[0091] For the die bonding layer 3, the Hansen solubility parameter (δ dD , δ pD , δ hD ) Regarding the die-bonding layer 3 , a sample obtained by cutting out a 1 cm square from the die-bonding layer 3 can be used as an evaluation sample.

[0092] In addition, in the case of the die bond layer 3, the determination of a good solvent and a poor solvent is based on the following score.

[0093] Score 1

[0094] Visually, the evaluation sample was completely dissolved in the evaluation solvent (excluding the precipitated filler).

[0095] Score 2

[0096] Visual observation confirmed that the evaluation sample was dissolved in the evaluation solvent, but some dissolved residue was confirmed. Specifically, the evaluation sample cut into 1 cm squares had a chipped corner due to the dissolution of a portion of the evaluation sample.

[0097] Score 0

[0098] Visual observation showed that the evaluation sample was not dissolved in the evaluation solvent at all. Specifically, since the evaluation sample was not dissolved at all, the evaluation sample cut into 1 cm squares did not show chipping.

[0099] The dispersion term δ of the adhesive layer 2 obtained as above is dA , polar term δ pA and the hydrogen bond term δ hA , and the dispersion term δ of the chip bonding layer 3 dD , polar term δ pD and the hydrogen bond term δ hD By substituting into the above formula (1), the Hansen solubility parameter distance Ra can be calculated.

[0100] Here, as described above, when evaluating the compatibility of component A and component B, the smaller the value of the Hansen solubility parameter distance Ra, the higher the compatibility of component A and component B is judged to be, and the larger the value of Ra, the lower the compatibility of component A and component B is judged to be.

[0101] Therefore, if the Hansen solubility parameter (δ dA , δ pA , δ hA ) and the Hansen solubility parameter (δdD , δ pD , δ hD ) is substituted into the above formula (1) and the value of the Hansen solubility parameter distance Ra calculated becomes smaller, the affinity between the adhesive layer 2 and the chip bonding layer 3 becomes higher, so that the chip bonding layer 3 can be fully maintained in the adhesive layer 2.

[0102] However, corresponding to the increase in affinity, the components contained in the chip bonding layer 3 (organic components other than polymers (for example, thermosetting resins such as epoxy resins, curing agents for thermosetting resins, thermosetting catalysts (curing accelerators)), etc.) are easily transferred to the adhesive layer 2, or the components contained in the adhesive layer 2 (for example, the photopolymerization initiator and thickener described later) are easily transferred to the chip bonding layer 3.

[0103] In addition, the Hansen solubility parameter (δ dA , δ pA , δ hA ) and the Hansen solubility parameter (δ dD , δ pD , δ hD ) is substituted into the above formula (1), and the larger the value of the Hansen solubility parameter distance Ra calculated is, the more difficult it is for the components contained in the chip bonding layer 3 to transfer to the adhesive layer 2, or the more difficult it is for the components contained in the adhesive layer 2 to transfer to the chip bonding layer 3, corresponding to the lower degree of affinity between the adhesive layer 2 and the chip bonding layer 3.

[0104] However, the die-bonding layer 3 cannot be sufficiently held by the pressure-sensitive adhesive layer 2 due to the lowered affinity.

[0105] Therefore, in the dicing die-bonding film 20 , it is necessary to set the Hansen solubility parameter distance Ra calculated from the Hansen solubility parameter of the pressure-sensitive adhesive layer 2 and the Hansen solubility parameter of the die-bonding layer 3 to an appropriate value.

[0106] However, for the cut chip bonding film 20 described in this embodiment, as described above, since the Hansen solubility parameter distance Ra is greater than 3 and less than 14, it is possible to suppress the transfer of components contained in the chip bonding layer 3 to the adhesive layer 2, or the transfer of components contained in the adhesive layer 2 to the chip bonding layer 3, and the chip bonding layer 3 can be fully maintained in the adhesive layer 2.

[0107] Thereby, chip floating which occurs after the die bonding layer is singulated can be relatively suppressed, and component transfer between the die bonding layer 3 and the adhesive layer 2 can be relatively suppressed.

[0108] As described above, the dicing die bonding film 20 according to this embodiment is used by attaching a semiconductor wafer to the die bonding layer 3 , and the Hansen solubility parameter distance Ra before attaching to the semiconductor wafer (ie, before the mounting step described later) may be greater than 3 and less than 14.

[0109] In addition, after the dicing chip bonding film 20 described in this embodiment is pasted to the semiconductor wafer and before the semiconductor chip with the chip bonding layer is recovered (i.e., in the later-described mounting process, expansion process and incision maintenance process), the Hansen solubility parameter distance Ra can be greater than 3 and less than 14.

[0110] It should be noted that when the adhesive layer 2 includes a radiation curing adhesive described below, the Hansen solubility parameter distance Ra of the dicing die bonding film 20 according to this embodiment may be greater than or equal to 3 and less than or equal to 14 after being attached to the semiconductor wafer and before being irradiated with radiation.

[0111] Furthermore, as described later, when the adhesive layer 2 includes a radiation-curing adhesive, the Hansen solubility parameter distance Ra of the dicing die bonding film 20 described in this embodiment after irradiation with radiation can exceed 14. As a result, the affinity between the adhesive layer 2 and the die bonding layer 3 becomes lower, so that the semiconductor chip with the die bonding layer 3 is easily recovered in the pickup step described later.

[0112] In the dicing die-bonding film 20 according to the present embodiment, the dispersion term δ of the Hansen solubility parameter of the adhesive layer 2 is dA The value of is related to the dispersion term δ of the Hansen solubility parameter of the chip bonding layer 3 dD The absolute value of the difference between the values ​​of is preferably 0.4 or more and 3.0 or less.

[0113] In addition, the dispersion term δ of the Hansen solubility parameter of the adhesive layer 2 dA The value of is preferably 14 or more and 18 or less.

[0114] Thereby, it is possible to further suppress chip floating which occurs after the die bonding layer is singulated, and it is possible to further suppress component migration between the die bonding layer 3 and the adhesive layer 2 .

[0115] In the dicing die-bonding film 20 according to the present embodiment, the polar term δ of the Hansen solubility parameter of the adhesive layer 2 is pA The value of is related to the polar term δ of the Hansen solubility parameter of the chip bonding layer 3 pD The absolute value of the difference between the values ​​of is preferably 1.5 or more and 10.0 or less.

[0116] In addition, the polar term δ of the Hansen solubility parameter of the adhesive layer 2 pA The value of is preferably 2 or more and 10 or less.

[0117] Thereby, it is possible to further suppress chip floating which occurs after the die bonding layer is singulated, and it is possible to further suppress component migration between the die bonding layer 3 and the adhesive layer 2 .

[0118] In the dicing die-bonding film 20 according to the present embodiment, the hydrogen bonding term δ of the Hansen solubility parameter of the adhesive layer 2 is hA The value of the hydrogen bonding term δ of the Hansen solubility parameter of the chip bonding layer 3 hD The absolute value of the difference between the values ​​of is preferably 0.5 or more and 6.5 or less.

[0119] In addition, the hydrogen bonding term δ of the Hansen solubility parameter of the adhesive layer 2 hA The value of is preferably 3 or more and 11.5 or less.

[0120] Thereby, it is possible to further suppress chip floating which occurs after the die bonding layer is singulated, and it is possible to further suppress component migration between the die bonding layer 3 and the adhesive layer 2 .

[0121] In the dicing die-bonding film 20 according to the present embodiment, the peeling force of the die-bonding layer 3 with respect to the pressure-sensitive adhesive layer 2 is preferably 0.5 N / 20 mm or more.

[0122] By setting the peeling force of the die bond layer 3 with respect to the adhesive layer 2 to the above-mentioned numerical range, the die bond layer 3 can be appropriately held by the adhesive layer 2 , thereby further suppressing chip floating after the die bond layer is singulated.

[0123] Furthermore, the peeling force of the die-bonding layer 3 with respect to the pressure-sensitive adhesive layer 2 is preferably 5 N / 20 mm or less.

[0124] The peeling force of the die bonding layer 3 relative to the adhesive layer 2 can be measured by a T-type peel test. The T-type peel test can be performed as follows: a sample having a size of 20 mm wide × 120 mm long is cut out from the diced die bonding film 20 with the substrate tape attached to the exposed surface of the die bonding layer 3 as a measurement sample, and the test is performed using a tensile tester (e.g., trade name "TG-1kN", manufactured by Minebea Mitsumi Co., Ltd.) at a temperature of 25°C and a tensile speed of 300 mm / min.

[0125] When the adhesive contained in the adhesive layer 2 is a radiation curing adhesive (eg, UV curing adhesive), the T-type peel test is performed on the measurement sample before the adhesive layer 2 is irradiated with radiation (eg, UV irradiation).

[0126] The substrate layer 1 supports the adhesive layer 2. The substrate layer 1 is made of a resin film. Examples of the resin contained in the resin film include polyolefins, polyesters, polyurethanes, polycarbonates, polyetheretherketones, polyimides, polyetherimides, polyamides, wholly aromatic polyamides, polyvinyl chloride, polyvinylidene chloride, polyphenylene sulfide, fluororesins, cellulose resins, and silicone resins.

[0127] Examples of the polyolefin include homopolymers of α-olefins, copolymers of two or more α-olefins, block polypropylene, random polypropylene, and copolymers of one or more α-olefins and other vinyl monomers.

[0128] The homopolymer of α-olefin is preferably a homopolymer of α-olefin having a carbon number of 2 to 12. Examples of such a homopolymer include ethylene, propylene, 1-butene, and 4-methyl-1-pentene.

[0129] Examples of copolymers of two or more α-olefins include ethylene / propylene copolymers, ethylene / 1-butene copolymers, ethylene / propylene / 1-butene copolymers, ethylene / α-olefin copolymers having 5 to 12 carbon atoms, propylene / ethylene copolymers, propylene / 1-butene copolymers, and propylene / α-olefin copolymers having 5 to 12 carbon atoms.

[0130] Examples of the copolymer of one or more α-olefins and other vinyl monomers include ethylene-vinyl acetate copolymer (EVA) and the like.

[0131] The polyolefin may be a so-called α-olefin thermoplastic elastomer. Examples of the α-olefin thermoplastic elastomer include a combination of a propylene-ethylene copolymer and a propylene homopolymer, or a propylene-ethylene-α-olefin terpolymer having 4 or more carbon atoms.

[0132] Examples of commercially available α-olefin-based thermoplastic elastomers include Vistamaxx 3980 (manufactured by ExxonMobil Chemical Company), which is a propylene-based elastomer resin.

[0133] The resin film may contain one kind of the aforementioned resin, or may contain two or more kinds of the aforementioned resins.

[0134] When the adhesive layer 2 includes an ultraviolet curing adhesive described later, the resin film forming the base layer 1 is preferably configured to have ultraviolet transmittance.

[0135] The substrate layer 1 may be a single-layer structure or a laminated structure. The substrate layer 1 may be obtained by non-stretching forming or by stretching forming, preferably by stretching forming. When the substrate layer 1 is a laminated structure, the substrate layer 1 preferably has a layer containing an elastomer (hereinafter referred to as an elastomer layer) and a layer containing a non-elastic body (hereinafter referred to as a non-elastic body layer).

[0136] By making the base layer 1 have an elastic layer and a non-elastic layer, the elastic layer can function as a stress relaxation layer for relaxing tensile stress. That is, since the tensile stress generated in the base layer 1 can be relatively reduced, the base layer 1 can have appropriate hardness and be relatively easy to stretch.

[0137] This can improve the dicing performance of dicing a semiconductor wafer into a plurality of semiconductor chips.

[0138] Furthermore, it is possible to suppress the base material layer 1 from being cracked and damaged during cutting in the expanding step.

[0139] It should be noted that, in this specification, the elastomer layer refers to a low elastic modulus layer having a tensile storage modulus at room temperature lower than that of the non-elastic layer. As the elastomer layer, an elastomer layer having a tensile storage modulus at room temperature of 10 MPa or more and 200 MPa or less can be cited, and as the non-elastic layer, a non-elastic layer having a tensile storage modulus at room temperature of 200 MPa or more and 500 MPa or less can be cited.

[0140] The elastomer layer may contain one type of elastomer or two or more types of elastomers, and preferably contains an α-olefin-based thermoplastic elastomer or EVA (ethylene-vinyl acetate copolymer).

[0141] The non-elastic layer may contain one non-elastic layer or two or more non-elastic layers, and preferably contains the metallocene PP described below.

[0142] When the substrate layer 1 includes an elastomer layer and a non-elastic layer, the substrate layer 1 preferably has a three-layer structure (non-elastic layer / elastic layer / non-elastic layer) with the elastomer layer as the center layer and the non-elastic layers on both sides of the center layer facing each other.

[0143] In addition, as described above, in the incision maintaining process, since the dicing die bonding film is thermally shrunk by blowing hot air (e.g., 100-130°C) at room temperature (e.g., 23°C) to the dicing die bonding film maintained in an expanded state, and then cooled and solidified, the outermost layer of the base material layer 1 preferably contains a resin having a melting point close to the temperature of the hot air blown to the dicing tape. Thus, the outermost layer melted by blowing the hot air can be solidified more quickly.

[0144] As a result, the incision can be more fully maintained in the incision maintaining step.

[0145] The substrate layer 1 is a laminated structure of an elastomer layer and a non-elastic layer. When the elastomer layer includes an α-olefin thermoplastic elastomer and the non-elastic layer includes a polyolefin such as metallocene PP described later, the elastomer layer preferably includes an α-olefin thermoplastic elastomer of 50% by mass or more and 100% by mass or less relative to the total mass of the elastomer forming the elastomer layer, more preferably 70% by mass or more and 100% by mass or less, further preferably 80% by mass or more and 100% by mass or less, particularly preferably 90% by mass or more and 100% by mass or less, and most preferably 95% by mass or more and 100% by mass or less. By including an α-olefin thermoplastic elastomer in the aforementioned range, the affinity between the elastomer layer and the non-elastic layer becomes high, so that the substrate layer 1 can be extruded relatively easily. In addition, the elastomer layer can function as a stress relaxation layer, so that the semiconductor wafer attached to the dicing tape can be efficiently cut.

[0146] When the substrate layer 1 is a laminated structure of an elastomer layer and a non-elastic layer, the substrate layer 1 is preferably obtained by coextrusion molding of a laminated structure of an elastomer layer and a non-elastic layer by coextruding an elastomer and a non-elastic body. As coextrusion molding, any and appropriate coextrusion molding commonly performed in the manufacture of films, sheets, etc. can be adopted. Among the coextrusion molding, from the viewpoint of being able to efficiently and cheaply obtain the substrate layer 1, it is preferred to adopt an inflation method or a coextrusion T-die method.

[0147] When the substrate layer 1 forming a laminated structure is obtained by co-extrusion molding, the aforementioned elastomer layer and the aforementioned non-elastic layer are heated and contacted in a molten state, so it is preferred that the difference in melting point between the aforementioned elastomer and the aforementioned non-elastic body is small. By making the difference in melting point small, it is suppressed that the aforementioned elastomer or any of the aforementioned non-elastic body with a low melting point is overheated, so that it is possible to suppress the generation of by-products due to thermal degradation of the aforementioned elastomer or any of the aforementioned non-elastic body with a low melting point. In addition, it is also possible to suppress the occurrence of poor lamination between the aforementioned elastomer layer and the aforementioned non-elastic body layer due to excessive reduction in viscosity of the aforementioned elastomer or any of the aforementioned non-elastic body with a low melting point. The difference in melting point between the aforementioned elastomer and the aforementioned non-elastic body is preferably above 0°C and below 70°C, and more preferably above 0°C and below 55°C.

[0148] The melting points of the elastomer and the non-elastic body can be measured by differential scanning calorimetry (DSC) analysis. For example, the melting points can be measured by using a differential scanning calorimeter (manufactured by TA INSTRUMENTS, model: DSC Q2000), heating to 200°C at a heating rate of 5°C / min under a nitrogen flow, and determining the peak temperature of the endothermic peak.

[0149] The thickness of the base material layer 1 is preferably 55 μm to 195 μm, more preferably 55 μm to 190 μm, further preferably 55 μm to 170 μm, and most preferably 60 μm to 160 μm. By making the thickness of the base material layer 1 within the above range, the dicing tape can be efficiently manufactured, and the semiconductor wafer attached to the dicing tape can be efficiently diced.

[0150] The thickness of the base material layer 1 can be determined by, for example, measuring the thickness at five points selected at random using a direct-reading thickness meter (manufactured by PEACOCK, model: R-205) and calculating the arithmetic average of these thicknesses.

[0151] In the base material layer 1 formed by laminating an elastomer layer and a non-elastic layer, the ratio of the thickness of the non-elastic layer to the thickness of the elastomer layer is preferably 1 / 25 or more and 1 / 3 or less, more preferably 1 / 25 or more and 1 / 3.5 or less, further preferably 1 / 25 or more and 1 / 4 or less, particularly preferably 1 / 22 or more and 1 / 4 or less, and most preferably 1 / 20 or more and 1 / 4 or less. By setting the ratio of the thickness of the non-elastic layer to the thickness of the elastomer layer to the above range, the semiconductor wafer attached to the dicing tape can be cut more efficiently.

[0152] The elastomer layer may be a single layer (1 layer) structure or a laminated structure. The elastomer layer is preferably a structure of 1 to 5 layers, more preferably a structure of 1 to 3 layers, further preferably a structure of 1 to 2 layers, and the best is a 1-layer structure. When the elastomer layer is a laminated structure, all layers may contain the same elastomer, or at least 2 layers may contain different elastomers.

[0153] The non-elastic layer may be a single layer (1 layer) structure or a laminated structure. The non-elastic layer is preferably a structure of 1 to 5 layers, more preferably a structure of 1 to 3 layers, further preferably a structure of 1 to 2 layers, and most preferably a 1-layer structure. When the non-elastic layer is a laminated structure, all layers may contain the same non-elastic body, or at least 2 layers may contain different non-elastic bodies.

[0154] The non-elastic layer preferably contains a polypropylene resin (hereinafter referred to as metallocene PP) as a polymerization product obtained by using a metallocene catalyst as a non-elastic. As the metallocene PP, a propylene / α-olefin copolymer as a polymerization product of a metallocene catalyst can be cited. By making the non-elastic layer contain metallocene PP, a dicing tape can be efficiently manufactured, and a semiconductor wafer attached to the dicing tape can be efficiently cut.

[0155] In addition, as a commercially available metallocene PP, WINTEC WFX4M (made by Japan Polypropylene Co., Ltd.) is mentioned.

[0156] Here, the metallocene catalyst is a catalyst comprising a transition metal compound of Group 4 of the periodic table (so-called metallocene compound), wherein the transition metal compound of Group 4 of the periodic table comprises a ligand having a cyclopentadienyl skeleton, and a cocatalyst capable of reacting with the metallocene compound to activate the metallocene compound into a stable ionic state, and the metallocene catalyst comprises an organic aluminum compound as required. The metallocene compound is a cross-linked metallocene compound capable of stereoregular polymerization of propylene.

[0157] Among the aforementioned propylene / α-olefin copolymers as polymerization products of metallocene catalysts, preferred are propylene / α-olefin random copolymers as polymerization products of metallocene catalysts. Among the aforementioned propylene / α-olefin random copolymers as polymerization products of metallocene catalysts, preferred are copolymers selected from propylene / α-olefin random copolymers having 2 carbon atoms as polymerization products of metallocene catalysts, propylene / α-olefin random copolymers having 4 carbon atoms as polymerization products of metallocene catalysts, and propylene / α-olefin random copolymers having 5 carbon atoms as polymerization products of metallocene catalysts. Among these, the most suitable is the propylene / ethylene random copolymer as a polymerization product of metallocene catalysts.

[0158] The propylene / α-olefin random copolymer as the polymerization product of the metallocene catalyst preferably has a melting point of 80°C to 140°C, particularly 100°C to 130°C, from the viewpoint of co-extrusion film-forming property with the elastomer layer and cutting property of the semiconductor wafer attached to the dicing tape.

[0159] The melting point of the propylene / α-olefin random copolymer which is a polymerization product of the metallocene catalyst can be measured by the above-mentioned method.

[0160] Here, if the aforementioned elastomer layer is arranged at the outermost layer of the substrate layer 1, when the substrate layer 1 is made into a roll, the aforementioned elastomer layers arranged at the outermost layer are easily adhered to each other (easy to stick together). Therefore, it becomes difficult to unwind the substrate layer 1 from the roll. In contrast, the preferred form of the substrate layer 1 of the aforementioned laminated structure is non-elastic layer / elastic layer / non-elastic layer, that is, the non-elastic layer is arranged at the outermost layer, so the substrate layer 1 of this form has excellent anti-blocking property. As a result, it is possible to suppress the delay caused by blocking in the manufacture of semiconductor devices using the dicing tape 10.

[0161] The non-elastic layer preferably contains a resin having a melting point of 100° C. to 130° C. and a molecular weight dispersion (mass average molecular weight / number average molecular weight) of 5 or less. Examples of such a resin include metallocene PP.

[0162] By making the non-elastic layer contain the resin as described above, the non-elastic layer can be cooled and solidified more quickly in the incision maintaining step, so that the shrinkage of the base layer 1 after the dicing tape is thermally shrunk can be more fully suppressed.

[0163] Thereby, in the incision maintaining step, the incision can be more fully maintained.

[0164] The adhesive layer 2 contains an adhesive. The adhesive layer 2 holds the semiconductor wafer to be singulated into semiconductor chips by bonding.

[0165] Examples of the adhesive include adhesives whose adhesive force can be reduced by an external action during use of the dicing tape 10 (hereinafter referred to as an adhesive-reducing type adhesive).

[0166] When an adhesive of an adhesion-reducing type is used as an adhesive, the adhesive layer 2 can be used separately in a state showing a higher adhesive force (hereinafter referred to as a high adhesive state) and a state showing a lower adhesive force (hereinafter referred to as a low adhesive state) during the use of the dicing tape 10. For example, when a semiconductor wafer attached to the dicing tape 10 is provided for cutting, the high adhesive state is used to suppress the floating or peeling of a plurality of semiconductor chips singulated by cutting the semiconductor wafer from the adhesive layer 2. In contrast, after cutting the semiconductor wafer, the low adhesive state is used to pick up a plurality of singulated semiconductor chips so that the plurality of semiconductor chips can be easily picked up from the adhesive layer 2.

[0167] Examples of the adhesion-reducing adhesive include an adhesive that can be cured by irradiation with radiation during use of the dicing tape 10 (hereinafter referred to as a radiation-curing adhesive).

[0168] Examples of the radiation-curable adhesive include adhesives that are cured by irradiation with electron beams, ultraviolet rays, α rays, β rays, γ rays, or X rays. Of these, adhesives that are cured by irradiation with ultraviolet rays (ultraviolet curable adhesives) are preferably used.

[0169] Examples of the radiation-curing adhesive include additive-type radiation-curing adhesives that include a base polymer as a main component, and radiation-polymerizable monomer components and radiation-polymerizable oligomer components having radiation-polymerizable carbon-carbon double bonds and other functional groups.

[0170] As the base polymer, an acrylic polymer is preferably used.

[0171] Examples of the acrylic polymer include acrylic polymers containing monomer units derived from (meth)acrylic acid esters, such as (meth)acrylic acid esters, alkyl (meth)acrylates, cycloalkyl (meth)acrylates, and aryl (meth)acrylates.

[0172] As the aforementioned acrylic polymer, preferably used are, for example, 2-hydroxyethyl acrylate (HEA), ethyl acrylate (EA), butyl acrylate (BA), 2-ethylhexyl acrylate (2EHA), isononyl acrylate (INA), lauryl acrylate (LA), 4-acryloylmorpholine (AMCO), 2-isocyanatoethylmethacrylate (MOI), and the like.

[0173] These acrylic polymers may be used alone or in combination of two or more.

[0174] The adhesive layer 2 may include an external crosslinking agent. As an external crosslinking agent, any type can be used as long as it can react with a base polymer (e.g., an acrylic polymer) to form a crosslinked structure. As such an external crosslinking agent, for example, polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine-based crosslinking agents can be cited.

[0175] Examples of the radiation-polymerizable monomer component include urethane (meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and 1,4-butanediol di(meth)acrylate. Examples of the radiation-polymerizable oligomer component include various oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene. The content ratio of the radiation-polymerizable monomer component and the radiation-polymerizable oligomer component in the radiation-curable adhesive can be selected within a range that appropriately reduces the adhesiveness of the adhesive layer 2.

[0176] The radiation-curable adhesive preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, camphorquinone, haloketones, acylphosphine oxides, and acylphosphonates.

[0177] When the pressure-sensitive adhesive layer 2 contains an external cross-linking agent, the pressure-sensitive adhesive layer 2 preferably contains 0.1 parts by mass or more and 3 parts by mass or less of the external cross-linking agent.

[0178] When the pressure-sensitive adhesive layer 2 contains a photopolymerization initiator, the pressure-sensitive adhesive layer 2 preferably contains 0.1 parts by mass or more and 10 parts by mass or less of the photopolymerization initiator.

[0179] The pressure-sensitive adhesive layer 2 may contain, in addition to the above-mentioned components, a cross-linking accelerator, a tackifier, an antioxidant, a colorant such as a pigment or a dye, and the like.

[0180] The thickness of the adhesive layer 2 is preferably 1 μm or more and 50 μm or less, more preferably 2 μm or more and 30 μm or less, and further preferably 5 μm or more and 25 μm or less.

[0181] The die bonding layer 3 preferably has thermosetting properties. The die bonding layer 3 can be given thermosetting properties by including at least one of a thermosetting resin and a thermoplastic resin having a thermosetting functional group.

[0182] When the die bonding layer 3 contains a thermosetting resin, examples of such thermosetting resins include epoxy resins, phenolic resins, amino resins, unsaturated polyester resins, polyurethane resins, silicone resins, and thermosetting polyimide resins, etc. Among these, epoxy resins are preferably used.

[0183] Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, o-cresol novolac type, trihydroxyphenylmethane type, tetraphenolethane type, hydantoin type, triglycidyl isocyanurate type, and glycidylamine type epoxy resins.

[0184] Examples of the phenol resin used as a curing agent for the epoxy resin include novolac-type phenol resins, resol-type phenol resins, and polyoxystyrene such as polyparaoxystyrene.

[0185] When the die bonding layer 3 includes a thermoplastic resin having a thermosetting functional group, such a thermoplastic resin may include, for example, an acrylic resin containing a thermosetting functional group. Among the acrylic resins containing a thermosetting functional group, an acrylic resin containing a monomer unit derived from a (meth)acrylate may be included.

[0186] For a thermosetting resin having a thermosetting functional group, a curing agent can be selected according to the type of the thermosetting functional group.

[0187] From the viewpoint of fully carrying out the curing reaction of the resin component or increasing the curing reaction speed, the die bonding layer 3 may also contain a thermal curing catalyst (curing accelerator). Examples of the thermal curing catalyst include imidazole compounds, triphenylphosphine compounds, amine compounds, and trihaloborane compounds.

[0188] The chip bonding layer 3 may include a thermoplastic resin. The thermoplastic resin acts as a binder. As thermoplastic resins, for example, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide 6, polyamide 6,6 and other polyamide resins, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamide-imide resins, fluororesins, etc. The above-mentioned thermoplastic resins may be used alone or in combination of two or more. As the above-mentioned thermoplastic resin, acrylic resins are preferred from the viewpoint of having few ionic impurities and high heat resistance, thereby easily ensuring the connection reliability based on the chip bonding layer.

[0189] The acrylic resin is preferably a polymer containing monomer units derived from (meth)acrylate as the largest monomer units in terms of mass ratio. Examples of (meth)acrylate include alkyl (meth)acrylate, cycloalkyl (meth)acrylate, and aryl (meth)acrylate. The acrylic resin may include monomer units derived from other components that can be copolymerized with (meth)acrylate. Examples of other components include functional group-containing monomers such as carboxyl-containing monomers, anhydride monomers, hydroxyl-containing monomers, glycidyl-containing monomers, sulfonic acid-containing monomers, phosphoric acid-containing monomers, acrylamide, and acrylonitrile, and various multifunctional monomers. From the viewpoint of achieving high cohesion in the chip bonding layer, the above-mentioned acrylic resin is preferably a copolymer of (meth)acrylate (especially (meth)acrylate alkyl ester having an alkyl group with a carbon number of 4 or less) and a carboxyl group-containing monomer, a nitrogen atom-containing monomer, or a polyfunctional monomer (especially a polyglycidyl-based polyfunctional monomer), and more preferably a copolymer of ethyl acrylate and butyl acrylate, acrylic acid, acrylonitrile, or polyglycidyl (meth)acrylate.

[0190] The die bonding layer 3 may contain one or more other components as necessary. Examples of other components include flame retardants, silane coupling agents, and ion scavengers.

[0191] The thickness of the die bond layer 3 is not particularly limited, and is, for example, 1 μm to 200 μm. The thickness may be 3 μm to 150 μm, or 5 μm to 100 μm.

[0192] It should be noted that the viscosity change of the die bond layer 3 measured using a rheometer (for example, HAAKE MARS III manufactured by Thermo Fisher Scientific) is preferably 300% or less.

[0193] If the viscosity change of the chip bonding layer 3 is less than 300%, the affinity between the adhesive layer 2 and the chip bonding layer 3 can be relatively reduced. As a result, it can be considered that the transfer of components from the chip bonding layer 3 to the adhesive layer 2 can be fully suppressed. Therefore, it can be considered that the change in the characteristics of the chip bonding layer 3 can be suppressed.

[0194] The dicing die-bonding film 20 of the present embodiment can be used as an auxiliary tool for manufacturing a semiconductor integrated circuit, for example. A specific example of using the dicing die-bonding film 20 will be described below.

[0195] Hereinafter, an example using the dicing die-bonding film 20 including a single base material layer 1 will be described.

[0196] The method for manufacturing a semiconductor integrated circuit has the following steps: a half-cutting step of forming grooves in a semiconductor wafer to be processed into a die by dicing the semiconductor wafer; a back grinding step of grinding the semiconductor wafer after the half-cutting step to reduce the thickness; a mounting step of attaching one side (e.g., the side opposite to the circuit side) of the semiconductor wafer after the back grinding step to a die bonding layer 3 and fixing the semiconductor wafer to a dicing tape 10; an expansion step of expanding the interval between the semiconductor chips processed by the half-cutting process; a cut-out maintaining step of maintaining the interval between the semiconductor chips; a pick-up step of peeling the die bonding layer 3 from the adhesive layer 2 and taking out the semiconductor die with the die bonding layer 3 attached; and a die bonding step of attaching the semiconductor die with the die bonding layer 3 attached to an adherend. When implementing these steps, the dicing tape (dicing die bonding film) of the present embodiment is used as a manufacturing auxiliary tool.

[0197] In the half-cutting process, Figure 2A and Figure 2B As shown in FIG. 1 , a half-cutting process is performed to cut the semiconductor integrated circuit into small pieces (dies). Specifically, a wafer processing tape T (see FIG. 1 ) is attached to the surface of the semiconductor wafer W opposite to the circuit surface. Figure 2A ). In addition, the dicing ring R is mounted on the wafer processing tape T (refer to Figure 2A ). A groove for dividing is formed in a state where the wafer processing tape T is attached (refer to Figure 2B ). In the back grinding process, such as Figure 2C and Figure 2D Specifically, the back grinding tape G is attached to the surface where the grooves are formed, and the wafer processing tape T attached initially is peeled off (see Figure 2C ). Grinding is performed with the back grinding tape G attached until the semiconductor wafer W reaches a predetermined thickness (see Figure 2D ).

[0198] During the installation process, Figure 3A to Figure 3B As shown, after the dicing ring R is attached to the adhesive layer 2 of the dicing tape 10, the semiconductor wafer W (see FIG. 1 ) which has been half-cut is attached to the exposed surface of the die bonding layer 3. Figure 3A ). Thereafter, the back grinding tape G is peeled off from the semiconductor wafer W (see Figure 3B ).

[0199] In the expansion process, Figure 4A to Figure 4C As shown, the dicing ring R is fixed to the holder H of the expansion device. The dicing die bonding film 20 is lifted from the lower side using the lifting member U provided in the expansion device, thereby stretching the dicing die bonding film 20 and expanding it in the surface direction (see Figure 4B ). Thus, the semiconductor wafer W that has been half-cut is cut under a specific temperature condition. The temperature condition is, for example, -20 to 5°C, preferably -15 to 0°C, and more preferably -10 to -5°C. The extended state is released by lowering the lifting member U (see Figure 4C ).

[0200] Furthermore, in the expansion process, Figure 5A to Figure 5B As shown, the dicing tape 10 is stretched under a higher temperature condition (for example, room temperature (23° C.)) to expand the area. Thus, the cut adjacent semiconductor chips are separated in the plane direction of the film surface, and the interval is further increased.

[0201] In the incision maintenance process, Figure 6 As shown, hot air (eg, 100 to 130° C.) is blown to the dicing tape 10 to heat-shrink the dicing tape 10 , and then the dicing tape 10 is cooled and solidified, thereby maintaining the distance (kerf) between the adjacent semiconductor chips to be diced.

[0202] Here, as described above, the Hansen solubility parameter (δ dA , δ pA , δ hA ) and the Hansen solubility parameter (δ dD , δ pD , δ hD ) and the Hansen solubility parameter distance Ra calculated by the following formula (1) is greater than 3 and less than 14, so it is possible to inhibit the components contained in the chip bonding layer 3 (such as the aforementioned thermal curing catalyst) from transferring to the adhesive layer 2 or the components contained in the adhesive layer 2 (such as the aforementioned external cross-linking agent and photopolymerization initiator) from transferring to the chip bonding layer 3, and the chip bonding layer 3 can be fully maintained in the adhesive layer 2.

[0203] Therefore, chip floating that occurs after the die bonding layer is singulated can be relatively suppressed, and component migration between the die bonding layer 3 and the adhesive layer 2 can be relatively suppressed.

[0204] Ra=[4(δ dD -δ dA ) 2 +(δ pD -δ pA ) 2 +(δ hD -δ hA ) 2 ] 1 / 2 …(1)

[0205] (where δ dD and δ dA is the dispersion term, δ pD and δ pA is the polar term, δ hD and δ hA is the hydrogen bond term)

[0206] In the picking process, Figure 7 As shown, the semiconductor chip with the die bonding layer 3 attached thereto is peeled off from the adhesive layer 2 of the dicing tape 10. Specifically, the pin member P is raised to lift up the semiconductor chip to be picked up through the dicing tape 10. The lifted semiconductor chip is held by the suction jig J.

[0207] When the adhesive layer 2 includes a radiation-curing adhesive, it is preferred to irradiate with radiation so that the Hansen solubility parameter distance Ra becomes 14. The intensity of the radiation to be irradiated is appropriately selected depending on the type of the radiation-curing adhesive and the like.

[0208] This makes it possible to relatively reduce the affinity between the adhesive layer 2 and the die-bonding layer 3 , and thus makes it easy to recover the semiconductor chip with the die-bonding layer 3 .

[0209] In the die bonding step, the semiconductor chip with the die bonding layer 3 attached thereto is bonded to an adherend.

[0210] Matters disclosed by this specification include the following. (1)

[0212] A dicing die bonding film comprising:

[0213] A dicing tape having an adhesive layer laminated on a base material layer; and

[0214] a die bonding layer laminated on the adhesive layer of the dicing tape,

[0215] The Hansen solubility parameter distance Ra of the dicing die bonding film is greater than or equal to 3 and less than or equal to 14, wherein the Hansen solubility parameter distance Ra is a distance between the Hansen solubility parameter (δ dA , δ pA , δ hA ) and the Hansen solubility parameter (δ dD , δ pD , δ hD ) and calculated using the following formula (1).

[0216] Ra=[4(δ dD -δ dA ) 2 +(δ pD -δ pA ) 2 +(δ hD -δ hA ) 2 ] 1 / 2 …(1)

[0217] (where δ dD and δ dA is the dispersion term, δ pD and δ pA is the polar term, δ hD and δ hA is the hydrogen bond term)

[0218] According to this configuration, chip floating that occurs after the die bonding layer is singulated can be relatively suppressed, and component migration between the die bonding layer and the adhesive layer can be relatively suppressed. (2)

[0220] The dicing die-bonding film according to (1) above, wherein the dispersion term δ of the Hansen solubility parameter of the adhesive layer is dA The value of is related to the dispersion term δ of the Hansen solubility parameter of the aforementioned chip bonding layer dD The absolute value of the difference between the values ​​of is greater than or equal to 0.4 and less than or equal to 3.0. (3)

[0222] The dicing die-bonding film according to (2) above, wherein the dispersion term δ of the Hansen solubility parameter of the adhesive layer is dA The value of is greater than or equal to 14 and less than or equal to 18.

[0223] According to this configuration, chip floating that occurs after the die bonding layer is singulated can be further suppressed, and component migration between the die bonding layer and the adhesive layer can be further suppressed. (4)

[0225] The dicing die-bonding film according to any one of (1) to (3) above, wherein the polar term δ of the Hansen solubility parameter of the adhesive layer pA The value of is related to the polar term δ of the Hansen solubility parameter of the aforementioned chip bonding layer pD The absolute value of the difference is 1.5 or more and 10.0 or less. (5)

[0227] The dicing die-bonding film according to the above (4), wherein the polar term δ of the Hansen solubility parameter of the adhesive layer pA The value of is greater than or equal to 2 and less than or equal to 10.

[0228] According to this configuration, chip floating that occurs after the die bonding layer is singulated can be further suppressed, and component migration between the die bonding layer and the adhesive layer can be further suppressed. (6)

[0230] The dicing die-bonding film according to any one of (1) to (5) above, wherein the hydrogen bonding term δ of the Hansen solubility parameter of the adhesive layer hA The value of the hydrogen bonding term δ of the Hansen solubility parameter of the aforementioned chip bonding layer hD The absolute value of the difference between the values ​​of is greater than or equal to 0.5 and less than or equal to 6.5. (7)

[0232] The dicing die-bonding film according to (6) above, wherein the hydrogen bonding term δ of the Hansen solubility parameter of the adhesive layer hA The value of is 3 or more and 11.5 or less.

[0233] According to this configuration, chip floating that occurs after the die bonding layer is singulated can be further suppressed, and component migration between the die bonding layer and the adhesive layer can be further suppressed. (8)

[0235] The dicing die-bonding film according to any one of (1) to (7) above, wherein a peeling force of the die-bonding layer with respect to the pressure-sensitive adhesive layer is 0.5 N / 20 mm or more. (9)

[0237] The dicing die-bonding film according to the above (8), wherein a peeling force of the die-bonding layer with respect to the pressure-sensitive adhesive layer is 5 N / 20 mm or less.

[0238] According to this configuration, the die bonding layer can be appropriately held in the adhesive layer, and therefore, chip floating that occurs after the die bonding layer is singulated can be further suppressed.

[0239] It should be noted that the dicing die bonding film of the present invention is not limited to the aforementioned embodiment. In addition, the dicing die bonding film of the present invention is not limited by the aforementioned effects. The dicing die bonding film of the present invention can be variously modified within the scope of the present invention.

[0240] Example

[0241] The following examples are provided to further illustrate the present invention in detail, but are not intended to limit the scope of the present invention.

[0242] [Example 1]

[0243] <Production of cutting tape>

[0244] Into a reaction container equipped with a condenser, a nitrogen inlet pipe, a thermometer and a stirrer, 11 parts by mass of 2-hydroxyethyl acrylate (hereinafter referred to as HEA) as a monomer, 89 parts by mass of isononyl acrylate (hereinafter referred to as INA) and 0.2 parts by mass of azobisisobutyronitrile (hereinafter referred to as AIBN) as a thermal polymerization initiator were added, and butyl acetate as a reaction solvent was added so that the concentration of the above monomers became 38%, and then polymerization was carried out at 62° C. for 4 hours and at 75° C. for 2 hours under a nitrogen flow to obtain an acrylic polymer A.

[0245] To the acrylic polymer A, 12 parts by mass of 2-methacryloyloxyethyl isocyanate (hereinafter referred to as MOI) and 0.06 parts by mass of dibutyltin dilaurate were added, and an addition reaction treatment was performed at 50° C. for 12 hours under air flow to obtain an acrylic polymer A′.

[0246] Next, 0.8 parts by mass of a polyisocyanate compound (trade name "COLONATE L", manufactured by Nippon Polyurethane Co., Ltd.) as an external crosslinking agent and 2 parts by mass of a photopolymerization initiator (trade name "Omnirad 127", manufactured by IGM Co., Ltd.) were added to 100 parts by mass of the acrylic polymer A' to prepare an adhesive solution (hereinafter sometimes referred to as adhesive solution A).

[0247] Next, the adhesive solution A was applied to the silicone release treated surface of a PET release film (thickness 50 μm) having a silicone release treated surface using an applicator, and dried at 120° C. for 2 minutes to form an adhesive layer with a thickness of 10 μm. Thereafter, a polyolefin film (trade name "FUNCRARE NED#125", thickness 125 μm) manufactured by Gunze Co., Ltd. was attached to the adhesive layer as a substrate layer, and stored at 50° C. for 24 hours to obtain a dicing tape A.

[0248] <Production of Chip Bonding Layer>

[0249] To 100 parts by mass of an acrylic resin (trade name "TEISANRESIN SG-70L", manufactured by NAGASE CHEMTEX, with a mass average molecular weight of 900,000), 200 parts by mass of an epoxy resin (trade name "KI-3000-4", manufactured by Tohto Chemical Industry Co., Ltd.), 200 parts by mass of a phenolic resin (trade name "MEHC-7851SS", manufactured by Meiwa Chemicals Co., Ltd.), 350 parts by mass (converted to silica filler) of a silica filler (trade name "SE2050-MCV", manufactured by ADMATECHS, with an average particle size of 500 nm) and 2 parts by mass of a curing accelerator (trade name "CUREZOL 2PHZ-PW", manufactured by Shikoku Chemicals Co., Ltd.) were added to methyl ethyl ketone to prepare an adhesive composition A having a solid content concentration of 30% by mass.

[0250] Next, the adhesive composition A was applied to the silicone release treated surface of a PET release film (50 μm thick) having a silicone release treated surface using an applicator to form a coating film, and the coating film was subjected to a desolventizing treatment at 120° C. for 2 minutes. Thus, a die bonding layer having a thickness (average thickness) of 10 μm was prepared on the PET release film.

[0251] <Production of Dicing Die Bonding Film>

[0252] The PET separator film on which the die bond layer was formed (hereinafter referred to as the PET separator film with a die bond layer) was punched into a 330 mmφ circular shape to obtain a 330 mmφ PET separator film with a die bond layer.

[0253] Next, after removing the PET isolation film from the cutting tape A to expose one side of the adhesive layer, a laminator is used to adhere the PET isolation film with the chip bonding layer to the cutting tape A at room temperature (23±2°C) in such a way that the exposed surface of the chip bonding layer abuts against the exposed surface of the adhesive layer, thereby obtaining a cutting chip bonding film A.

[0254] That is, the dicing tape A described in Example 1 is composed of a polyolefin film, an adhesive layer, a die bonding layer, and a PET separator laminated in this order.

[0255] [Example 2]

[0256] <Production of cutting tape>

[0257] Into the same reaction container as described in Example 1, 16 parts by mass of HEA as a monomer, 84 parts by mass of butyl acrylate (hereinafter referred to as BA), and 0.2 parts by mass of AIBN as a thermal polymerization initiator were added, and butyl acetate as a reaction solvent was further added so that the concentration of the above monomers became 32%, and then polymerization was carried out at 62° C. for 4 hours and at 75° C. for 2 hours under a nitrogen stream to obtain an acrylic polymer B.

[0258] To the acrylic polymer B, 17 parts by mass of MOI and 0.09 parts by mass of dibutyltin dilaurate were added, and an addition reaction treatment was performed at 50° C. for 12 hours under an air flow to obtain an acrylic polymer B′.

[0259] Next, 0.8 parts by mass of a polyisocyanate compound (trade name "COLONATE L", manufactured by Nippon Polyurethane Co., Ltd.) as an external crosslinking agent and 2 parts by mass of a photopolymerization initiator (trade name "Omnirad 127", manufactured by IGM Co., Ltd.) were added to 100 parts by mass of the acrylic polymer B' to prepare an adhesive solution (hereinafter sometimes referred to as adhesive solution B).

[0260] Next, the adhesive solution B was applied to the silicone release treated surface of a PET release film (thickness 50 μm) having a silicone release treated surface using an applicator, and dried at 120° C. for 2 minutes to form an adhesive layer with a thickness of 10 μm. Thereafter, a polyolefin film (trade name "FUNCRARE NED#125", thickness 125 μm) manufactured by Gunze Co., Ltd. was attached to the adhesive layer as a substrate layer, and stored at 50° C. for 24 hours to obtain a dicing tape B.

[0261] <Production of Chip Bonding Layer>

[0262] The same method as in Example 1 was carried out.

[0263] <Production of Dicing Die Bonding Film>

[0264] After obtaining a 330 mmφ PET isolation film with a chip bonding layer in the same manner as in Example 1, the PET isolation film is removed from the cutting tape B to expose one side of the adhesive layer. Using a laminator, the PET isolation film with the chip bonding layer is adhered to the cutting tape B at room temperature in a manner such that the exposed surface of the chip bonding layer abuts against the exposed surface of the adhesive layer, thereby obtaining a cutting chip bonding film B.

[0265] [Example 3]

[0266] <Production of cutting tape>

[0267] Into the same reaction container as described in Example 1, 11 parts by mass of HEA as a monomer, 89 parts by mass of 2-ethylhexyl acrylate (hereinafter referred to as 2EHA), and 0.2 parts by mass of AIBN as a thermal polymerization initiator were added, and butyl acetate as a reaction solvent was added so that the concentration of the above monomers became 36%, and then polymerization was carried out at 62° C. for 4 hours and at 75° C. for 2 hours under a nitrogen flow to obtain an acrylic polymer C.

[0268] To the acrylic polymer C, 13 parts by mass of MOI and 0.07 parts by mass of dibutyltin dilaurate were added, and an addition reaction treatment was performed at 50° C. for 12 hours under an air flow to obtain an acrylic polymer C′.

[0269] Next, 0.8 parts by mass of a polyisocyanate compound (trade name "COLONATE L", manufactured by Nippon Polyurethane Co., Ltd.) as an external crosslinking agent and 2 parts by mass of a photopolymerization initiator (trade name "Omnirad 127", manufactured by IGM Co., Ltd.) were added to 100 parts by mass of the acrylic polymer C' to prepare an adhesive solution (hereinafter sometimes referred to as adhesive solution C).

[0270] Next, the adhesive solution C was applied to the silicone release treated surface of a PET release film (thickness 50 μm) having a silicone release treated surface using an applicator, and dried at 120° C. for 2 minutes to form an adhesive layer with a thickness of 10 μm. Thereafter, a polyolefin film (trade name "FUNCRARE NED#125", thickness 125 μm) manufactured by Gunze Co., Ltd. was attached as a substrate layer to the adhesive layer, and stored at 50° C. for 24 hours to obtain a dicing tape C.

[0271] <Production of Chip Bonding Layer>

[0272] The same method as in Example 1 was carried out.

[0273] <Production of Dicing Die Bonding Film>

[0274] After obtaining a 330 mmφ PET isolation film with a chip bonding layer in the same manner as in Example 1, the PET isolation film is removed from the cutting tape C to expose one side of the adhesive layer. Using a laminator, the PET isolation film with the chip bonding layer is adhered to the cutting tape C at room temperature in a manner such that the exposed surface of the chip bonding layer abuts against the exposed surface of the adhesive layer, thereby obtaining a cutting chip bonding film C.

[0275] [Example 4]

[0276] <Production of cutting tape>

[0277] Into the same reaction container as described in Example 1, 24 parts by mass of HEA and 76 parts by mass of INA as monomers and 0.2 parts by mass of AIBN as a thermal polymerization initiator were added, and butyl acetate as a reaction solvent was added so that the concentration of the above monomers became 32%, and then polymerization was carried out at 62° C. for 4 hours and at 75° C. for 2 hours under a nitrogen stream to obtain an acrylic polymer D.

[0278] To the acrylic polymer D, 23 parts by mass of MOI and 0.12 parts by mass of dibutyltin dilaurate were added, and an addition reaction treatment was performed at 50° C. for 12 hours under an air flow to obtain an acrylic polymer D′.

[0279] Next, 0.8 parts by mass of a polyisocyanate compound (trade name "COLONATE L", manufactured by Nippon Polyurethane Co., Ltd.) as an external crosslinking agent and 2 parts by mass of a photopolymerization initiator (trade name "Omnirad 127", manufactured by IGM Co., Ltd.) were added to 100 parts by mass of the acrylic polymer D' to prepare an adhesive solution (hereinafter sometimes referred to as adhesive solution D).

[0280] Next, the adhesive solution D was applied to the silicone release treated surface of a PET release film (thickness 50 μm) having a silicone release treated surface using an applicator, and dried at 120° C. for 2 minutes to form an adhesive layer with a thickness of 10 μm. Thereafter, a polyolefin film (trade name "FUNCRARE NED#125", thickness 125 μm) manufactured by Gunze Co., Ltd. was attached as a substrate layer to the adhesive layer, and stored at 50° C. for 24 hours to obtain a dicing tape D.

[0281] <Production of Chip Bonding Layer>

[0282] The same method as in Example 1 was carried out.

[0283] <Production of Dicing Die Bonding Film>

[0284] After obtaining a 330 mmφ PET isolation film with a chip bonding layer in the same manner as in Example 1, the PET isolation film is removed from the cutting tape D to expose one side of the adhesive layer. Using a laminator, the PET isolation film with the chip bonding layer is adhered to the cutting tape D at room temperature in a manner such that the exposed surface of the chip bonding layer abuts against the exposed surface of the adhesive layer, thereby obtaining a cutting chip bonding film D.

[0285] [Example 5]

[0286] <Production of cutting tape>

[0287] Into the same reaction container as described in Example 1, 42 parts by mass of HEA and 58 parts by mass of INA as monomers and 0.2 parts by mass of AIBN as a thermal polymerization initiator were added, and butyl acetate as a reaction solvent was added so that the concentration of the above monomers became 30%, and then polymerization was carried out at 62° C. for 4 hours and at 75° C. for 2 hours under a nitrogen flow to obtain an acrylic polymer E.

[0288] To the acrylic polymer E were added 41 parts by mass of MOI and 0.21 parts by mass of dibutyltin dilaurate, and an addition reaction treatment was performed at 50° C. for 12 hours under an air flow to obtain an acrylic polymer E′.

[0289] Next, 0.8 parts by mass of a polyisocyanate compound (trade name "COLONATE L", manufactured by Nippon Polyurethane Co., Ltd.) as an external crosslinking agent and 2 parts by mass of a photopolymerization initiator (trade name "Omnirad 127", manufactured by IGM Co., Ltd.) were added to 100 parts by mass of the acrylic polymer E' to prepare an adhesive solution (hereinafter sometimes referred to as adhesive solution E).

[0290] Next, the adhesive solution E was applied to the silicone release treated surface of a PET release film (thickness 50 μm) having a silicone release treated surface using an applicator, and dried at 120° C. for 2 minutes to form an adhesive layer with a thickness of 10 μm. Thereafter, a polyolefin film (trade name "FUNCRARE NED#125", thickness 125 μm) manufactured by Gunze Co., Ltd. was attached to the adhesive layer as a substrate layer, and stored at 50° C. for 24 hours to obtain a dicing tape E.

[0291] <Production of Chip Bonding Layer>

[0292] The same method as in Example 1 was carried out.

[0293] <Production of Dicing Die Bonding Film>

[0294] After obtaining a 330 mmφ PET isolation film with a chip bonding layer in the same manner as in Example 1, the PET isolation film is removed from the cutting tape E to expose one side of the adhesive layer. Using a laminator, the PET isolation film with the chip bonding layer is adhered to the cutting tape E at room temperature in a manner such that the exposed surface of the chip bonding layer abuts against the exposed surface of the adhesive layer, thereby obtaining a cutting chip bonding film E.

[0295] [Example 6]

[0296] <Production of cutting tape>

[0297] Into the same reaction container as described in Example 1, 14 parts by mass of HEA, 71 parts by mass of 2EHA, 15 parts by mass of 4-acryloylmorpholine (hereinafter referred to as ACMO) and 0.2 parts by mass of AIBN as a thermal polymerization initiator were added as monomers, and butyl acetate was further added as a reaction solvent so that the concentration of the above monomers became 34%, and then polymerization was carried out at 62° C. for 4 hours and at 75° C. for 2 hours under a nitrogen flow to obtain an acrylic polymer F.

[0298] To the acrylic polymer F, 15 parts by mass of MOI and 0.08 parts by mass of dibutyltin dilaurate were added, and an addition reaction treatment was performed at 50° C. for 12 hours under an air flow to obtain an acrylic polymer F′.

[0299] Next, 0.8 parts by mass of a polyisocyanate compound (trade name "COLONATE L", manufactured by Nippon Polyurethane Co., Ltd.) as an external crosslinking agent and 2 parts by mass of a photopolymerization initiator (trade name "Omnirad 127", manufactured by IGM Co., Ltd.) were added to 100 parts by mass of the acrylic polymer F' to prepare an adhesive solution (hereinafter sometimes referred to as adhesive solution F).

[0300] Next, the adhesive solution F was applied to the silicone release treated surface of a PET release film (thickness 50 μm) having a silicone release treated surface using an applicator, and dried at 120° C. for 2 minutes to form an adhesive layer with a thickness of 10 μm. Thereafter, a polyolefin film (trade name "FUNCRARE NED#125", thickness 125 μm) manufactured by Gunze Co., Ltd. was attached as a substrate layer to the adhesive layer, and stored at 50° C. for 24 hours to obtain a dicing tape F.

[0301] <Production of Chip Bonding Layer>

[0302] The same method as in Example 1 was carried out.

[0303] <Production of Dicing Die Bonding Film>

[0304] After obtaining a 330 mmφ PET isolation film with a chip bonding layer in the same manner as in Example 1, the PET isolation film is removed from the cutting tape F to expose one side of the adhesive layer. Using a laminator, the PET isolation film with the chip bonding layer is adhered to the cutting tape F at room temperature in a manner such that the exposed surface of the chip bonding layer abuts against the exposed surface of the adhesive layer, thereby obtaining a cutting chip bonding film F.

[0305] [Comparative Example 1]

[0306] <Production of cutting tape>

[0307] Into the same reaction container as described in Example 1, 5 parts by mass of HEA as a monomer, 95 parts by mass of lauryl acrylate (hereinafter referred to as LA), and 0.2 parts by mass of AIBN as a thermal polymerization initiator were added, and butyl acetate as a reaction solvent was added so that the concentration of the above monomers became 42%, and then polymerization was carried out at 62° C. for 4 hours and at 75° C. for 2 hours under a nitrogen stream to obtain an acrylic polymer G.

[0308] To the acrylic polymer G, 15 parts by mass of MOI and 0.03 parts by mass of dibutyltin dilaurate were added, and an addition reaction treatment was performed at 50° C. for 12 hours under an air flow to obtain an acrylic polymer G′.

[0309] Next, 0.8 parts by mass of a polyisocyanate compound (trade name "COLONATE L", manufactured by Nippon Polyurethane Co., Ltd.) as an external crosslinking agent and 2 parts by mass of a photopolymerization initiator (trade name "Omnirad 127", manufactured by IGM Co., Ltd.) were added to 100 parts by mass of the acrylic polymer G' to prepare an adhesive solution (hereinafter sometimes referred to as adhesive solution G).

[0310] Next, the adhesive solution G was applied to the silicone release treated surface of a PET release film (thickness 50 μm) having a silicone release treated surface using an applicator, and dried at 120° C. for 2 minutes to form an adhesive layer with a thickness of 10 μm. Thereafter, a polyolefin film (trade name "FUNCRARE NED#125", thickness 125 μm) manufactured by Gunze Co., Ltd. was attached as a substrate layer to the adhesive layer, and stored at 50° C. for 24 hours to obtain a dicing tape G.

[0311] <Production of Chip Bonding Layer>

[0312] The same method as in Example 1 was carried out.

[0313] <Production of Dicing Die Bonding Film>

[0314] After obtaining a 330 mmφ PET isolation film with a chip bonding layer in the same manner as in Example 1, the PET isolation film is removed from the cutting tape G to expose one side of the adhesive layer. Using a laminator, the PET isolation film with the chip bonding layer is adhered to the cutting tape G at room temperature in a manner such that the exposed surface of the chip bonding layer abuts against the exposed surface of the adhesive layer, thereby obtaining a cutting chip bonding film G.

[0315] [Comparative Example 2]

[0316] <Production of cutting tape>

[0317] Into the same reaction container as described in Example 1, 47 parts by mass of HEA and 53 parts by mass of INA as monomers and 0.2 parts by mass of AIBN as a thermal polymerization initiator were added, and butyl acetate as a reaction solvent was added so that the concentration of the above monomers became 28%, and then polymerization was carried out at 62° C. for 4 hours and at 75° C. for 2 hours under a nitrogen stream to obtain an acrylic polymer H.

[0318] To the acrylic polymer H were added 156 parts by mass of MOI and 0.28 parts by mass of dibutyltin dilaurate, and an addition reaction treatment was performed at 50° C. for 12 hours under an air flow to obtain an acrylic polymer H′.

[0319] Next, 0.8 parts by mass of a polyisocyanate compound (trade name "COLONATE L", manufactured by Nippon Polyurethane Co., Ltd.) as an external crosslinking agent and 2 parts by mass of a photopolymerization initiator (trade name "Omnirad 127", manufactured by IGM Co., Ltd.) were added to 100 parts by mass of the acrylic polymer H' to prepare an adhesive solution (hereinafter sometimes referred to as adhesive solution H).

[0320] Next, the adhesive solution H was applied to the silicone release treated surface of a PET release film (thickness 50 μm) having a silicone release treated surface using an applicator, and dried at 120° C. for 2 minutes to form an adhesive layer with a thickness of 10 μm. Thereafter, a polyolefin film (trade name "FUNCRARE NED#125", thickness 125 μm) manufactured by Gunze Co., Ltd. was attached as a substrate layer to the adhesive layer, and stored at 50° C. for 24 hours to obtain a dicing tape H.

[0321] <Production of Chip Bonding Layer>

[0322] The same method as in Example 1 was carried out.

[0323] <Production of Dicing Die Bonding Film>

[0324] After obtaining a 330 mmφ PET isolation film with a chip bonding layer in the same manner as in Example 1, the PET isolation film is removed from the cutting tape H to expose one side of the adhesive layer. Using a laminator, the PET isolation film with the chip bonding layer is adhered to the cutting tape H at room temperature in a manner such that the exposed surface of the chip bonding layer abuts against the exposed surface of the adhesive layer, thereby obtaining a cutting chip bonding film H.

[0325] [Comparative Example 3]

[0326] <Production of cutting tape>

[0327] Into the same reaction container as described in Example 1, 19 parts by mass of HEA as a monomer, 81 parts by mass of ethyl acrylate (hereinafter referred to as EA), and 0.2 parts by mass of AIBN as a thermal polymerization initiator were added, and butyl acetate as a reaction solvent was added so that the concentration of the above monomers became 30%, and then polymerization was carried out at 62° C. for 4 hours and at 75° C. for 2 hours under a nitrogen flow to obtain an acrylic polymer I.

[0328] To the acrylic polymer I, 121 parts by mass of MOI and 0.11 parts by mass of dibutyltin dilaurate were added, and an addition reaction treatment was performed at 50° C. for 12 hours under an air flow to obtain an acrylic polymer I′.

[0329] Next, 0.8 parts by mass of a polyisocyanate compound (trade name "COLONATE L", manufactured by Nippon Polyurethane Co., Ltd.) as an external crosslinking agent and 2 parts by mass of a photopolymerization initiator (trade name "Omnirad 127", manufactured by IGM Co., Ltd.) were added to 100 parts by mass of the acrylic polymer I' to prepare an adhesive solution (hereinafter sometimes referred to as adhesive solution I).

[0330] Next, the adhesive solution I was applied to the silicone release treated surface of a PET release film (thickness 50 μm) having a silicone release treated surface using an applicator, and dried at 120° C. for 2 minutes to form an adhesive layer with a thickness of 10 μm. Thereafter, a polyolefin film (trade name "FUNCRARE NED#125", thickness 125 μm) manufactured by Gunze Co., Ltd. was attached as a substrate layer to the adhesive layer, and stored at 50° C. for 24 hours to obtain a dicing tape I.

[0331] <Production of Chip Bonding Layer>

[0332] The same method as in Example 1 was carried out.

[0333] <Production of Dicing Die Bonding Film>

[0334] After obtaining a 330 mmφ PET isolation film with a chip bonding layer in the same manner as in Example 1, the PET isolation film is removed from the cutting tape I to expose one side of the adhesive layer. Using a laminator, the PET isolation film with the chip bonding layer is adhered to the cutting tape I at room temperature in a manner such that the exposed surface of the chip bonding layer abuts against the exposed surface of the adhesive layer, thereby obtaining a cutting chip bonding film I.

[0335] (Hansen Solubility Parameter)

[0336] For the dicing die-bonding film described in each example, the three-dimensional coordinates (δ dA , δ pA , δhA ) and the three-dimensional coordinates of the chip bonding layer (δ dD , δ pD , δ hD ).

[0337] Specifically, the three-dimensional coordinates (δ dA , δ pA , δ hA ).

[0338] (1) As a sample for evaluation, a part of the adhesive layer was taken out from the dicing die-bonding film so as not to mix with the die-bonding layer and the base material layer (polyolefin film).

[0339] In addition, when sampling the sample for evaluation of the adhesive layer, the die bonding layer was removed from the adhesive layer.

[0340] (2) The evaluation sample (the adhesive layer removed) is added to the evaluation solvent in a manner such that the concentration reaches 0.5 mg / mL. As the evaluation solvent, a solvent with known Hansen solubility parameters, that is, a solvent with known values ​​of dispersion term, polar term and hydrogen bonding term is used. As such a solvent, acetone, toluene, ethyl acetate, ethanol, chloroform, dimethyl sulfoxide, N-methylformamide, N,N-dimethylformamide, N-methylpyrrolidone, γ-butyrolactone, 1,1,2,2-tetrabromoethane, 1-butanol, 4-methyl-2-pentanone, 2-propanol, cyclohexane, formamide, 2-methoxyethanol, acetic acid, benzyl alcohol, ethanolamine, methyl ethyl ketone, methylcyclohexane, tetrahydrofuran, aniline, 1,4-dioxane, salicylaldehyde, and ethylene glycol are used.

[0341] That is, the evaluation samples were added to the above-mentioned respective evaluation solvents.

[0342] (3) After standing for 24 hours at room temperature (23±2° C.) under light-shielding conditions without impregnation or stirring of each evaluation solvent to which the evaluation sample was added, the degree of swelling of the evaluation sample in each evaluation solvent was evaluated.

[0343] (4) Using the analysis software "Hansen Solubility Parameter in Practice (HSPiP) Ver.4", the Hansen solubility parameters (dispersion term, polar term and hydrogen bonding term) of each of the above-mentioned evaluation solvents were plotted in three-dimensional space with coordinates (δ d , δ p , δ h ) to draw points.

[0344] (5) Based on the evaluation results of the state of the evaluation samples in the above-mentioned evaluation solvents, the good solvent and the poor solvent relative to the adhesive layer are determined, and the results are input into the analysis software "HSPiP" in the form of scores. Using the analysis software "HSPiP", a Hansen solubility sphere is prepared in such a way that the good solvent is on the inside and the poor solvent is on the outside. In addition, the center coordinates of the aforementioned Hansen solubility sphere are calculated and used as the Hansen solubility parameter (δ dA , δ pA , δ hA ).

[0345] In addition, the determination of a good solvent and a poor solvent is based on the following score.

[0346] Score 1

[0347] The evaluation sample exists in a state of being swollen with a swelling ratio Sr exceeding 55%, or the evaluation sample exists in a state of being completely dissolved in the evaluation solvent, or the evaluation sample exists in a state of being broken into pieces of substantially the same size in the evaluation solvent.

[0348] It should be noted that the swelling ratio Sr refers to the following numerical value: the maximum diameter of the evaluation sample before adding a solvent is measured (for example, the major diameter is measured in the case of an elliptical shape, and the diameter is measured in the case of a circular shape), and after adding a solvent and letting it stand, the degree of increase in the maximum diameter is calculated, thereby obtaining a value.

[0349] That is, the swelling ratio Sr is calculated using the following formula.

[0350] Sr (%) = [(maximum diameter of the evaluation sample after adding the solvent and leaving it to stand) - (maximum diameter of the evaluation sample before adding the solvent)] / (maximum diameter of the evaluation sample before adding the solvent) × 100

[0351] Score 2

[0352] The evaluation sample exists in a state where it is swollen with a swelling ratio Sr of 20% or more and 55% or less (swelling is confirmed in the evaluation sample, but the degree is not large), or the evaluation sample is in a state where a part of it is obviously dissolved but not completely dissolved, or the evaluation sample exists in a state where it is only partially fragmented in the evaluation solvent.

[0353] Score 0

[0354] The evaluation sample exists in a state where it is swollen at a swelling ratio Sr exceeding 0% and less than 20% (swelling is hardly confirmed visually in the evaluation sample), or the evaluation sample is not dissolved at all in the evaluation solvent.

[0355] The three-dimensional coordinates of the chip bonding layer (δ dD , δ pD , δ hD ), and the same operation as the above adhesive layer is performed to obtain. In sampling the chip bonding layer, it is taken after it is removed from the adhesive layer. A sample of 1 cm square is cut out from the chip bonding layer as the evaluation sample.

[0356] In addition, in the case of a die bonding layer, the determination of a good solvent and a poor solvent is based on the following score.

[0357] Score 1

[0358] Visually, the evaluation sample was completely dissolved in the evaluation solvent (excluding the precipitated filler).

[0359] Score 2

[0360] Visual observation confirmed that the evaluation sample was dissolved in the evaluation solvent, but some dissolved residue was confirmed. Specifically, the evaluation sample cut into 1 cm squares had a chipped corner due to the dissolution of a portion of the evaluation sample.

[0361] Score 0

[0362] Visual observation showed that the evaluation sample was not dissolved in the evaluation solvent at all. Specifically, since the evaluation sample was not dissolved at all, the evaluation sample cut into 1 cm squares did not show chipping.

[0363] Furthermore, the Hansen solubility parameter distance Ra was calculated using the following formula (1) based on the three-dimensional coordinate values ​​of the pressure-sensitive adhesive layer and the three-dimensional coordinate values ​​of the die-bonding layer.

[0364] Ra=[4(δ dD -δ dA ) 2 +(δ pD -δ pA ) 2 +(δ hD -δ hA ) 2 ] 1 / 2 …(1)

[0365] (where δ dD and δ dA is the dispersion term, δ pD and δ pA is the polar term, δ hD and δ hA is the hydrogen bond term)

[0366] The three-dimensional coordinates (δ dA , δ pA , δ hA ) and the three-dimensional coordinates of the chip bonding layer (δ dD , δ pD , δ hD ), the absolute value of the difference between the dispersion term of the adhesive layer and the dispersion term of the chip bonding layer, the absolute value of the polarity term of the adhesive layer and the polarity term of the chip bonding layer, the absolute value of the hydrogen bonding term of the adhesive layer and the hydrogen bonding term of the chip bonding layer, and the Hansen solubility parameter distance Ra are shown in the following Table 1.

[0367] (Transfer amount of photopolymerization initiator)

[0368] About the dicing die-bonding film described in each example, the amount of the photopolymerization initiator transferred from the pressure-sensitive adhesive layer to the die-bonding layer was measured.

[0369] The amount of photopolymerization initiator transferred was measured as follows: It should be noted that the following (1) to (4) were all performed in a dark place.

[0370] (1) About 0.1 g of the die bonding layer was peeled off from the adhesive layer.

[0371] (2) The peeled die bond layer was added to 3 mL of a chloroform solution and then shaken in a cold dark place overnight (about 16 hours) to extract the photopolymerization initiator into the chloroform solution.

[0372] (3) 5 mL of methanol solution was added to the chloroform solution after the photopolymerization initiator was extracted to reprecipitate components other than the photopolymerization initiator. The reprecipitated components were filtered out with a membrane filter to obtain a solution of the photopolymerization initiator (a mixed solution of chloroform and methanol).

[0373] (4) The solution of the photopolymerization initiator was analyzed by HPLC. The analysis by HPLC was performed under the following conditions.

[0374] Analysis device

[0375] Waters, Acquity HPLC

[0376] Measurement conditions

[0377] Column: GL Science, Inert Sustain (registered trademark) C18 (4.6 mm φ × 5 cm, average particle size of carrier: 3 μm)

[0378] Column temperature: 40°C

[0379] Column flow rate: 0.8mL / min

[0380] Eluent composition: ultrapure water / acetonitrile gradient conditions

[0381] Injection volume: 10μL

[0382] Detector: PDA detector

[0383] Detection wavelength: 260nm

[0384] In addition, the quantitative determination of the photopolymerization initiator was performed based on the calibration curve and the above-mentioned analysis results.

[0385] The amount of photopolymerization initiator transferred measured as described above is shown in Table 1 below.

[0386] (Peel force)

[0387] For the dicing die-bonding film described in each example, the peeling force of the die-bonding layer with respect to the pressure-sensitive adhesive layer was measured.

[0388] The peeling force of the die bonding layer with respect to the adhesive layer was measured by a T-type peel test.

[0389] The T-type peel test is carried out as follows: the PET isolation film is peeled off from the chip bonding layer to form an exposed surface on the chip bonding layer, and a substrate tape (trade name "ELP BT315", manufactured by Nitto Denko Corporation) is pasted on the exposed surface. A sample with a size of 20 mm wide × 120 mm long is cut out from the thus obtained cut chip bonding film, and the sample is used as a measurement sample. A tensile tester (for example, trade name "TG-1kN", manufactured by Minebea Mitsumi Co., Ltd.) is used to carry out the test at a temperature of 25°C and a tensile speed of 300 mm / min.

[0390] In addition, the measurement of the peeling force was performed on the measurement sample before ultraviolet irradiation.

[0391] The peeling forces measured as described above are shown in Table 1 below.

[0392] (Retention Evaluation)

[0393] A bare wafer (300 mm in diameter) and a dicing ring were attached to the dicing die-bonding film of Example 1 obtained as described above while being heated at a temperature of 50 to 80° C.

[0394] Next, the semiconductor wafer and the die bonding layer were diced using a die separation device DDS230 (manufactured by DISCO Corporation), and the die floating after dicing was evaluated. The bare wafer was cut into bare chips of 10 mm in length × 10 mm in width × 0.055 mm in thickness, and then ground to a thickness of 0.030 mm.

[0395] It should be noted that a warped wafer was used as the bare wafer.

[0396] A warped wafer was produced as follows.

[0397] First, the following (a) to (f) were dissolved in methyl ethyl ketone to obtain a warpage control composition having a solid content concentration of 20% by mass.

[0398] (a) Acrylic resin (manufactured by Nagase Chemical Co., Ltd., trade name "SG-70L"): 5 parts by mass

[0399] (b) Epoxy resin (manufactured by Mitsubishi Chemical Corporation, trade name "JER828"): 5 parts by mass

[0400] (c) Phenolic resin (produced by Meiwa Chemicals Co., Ltd., trade name "LDR8210"): 14 parts by mass

[0401] (d) Epoxy resin (manufactured by Mitsubishi Chemical Corporation, trade name "MEH-8005"): 2 parts by mass

[0402] (e) Spherical silica (manufactured by Admatechs, trade name "SO-25R"): 53 parts by mass

[0403] (f) Phosphorus-based catalyst (TPP-K): 1 part by mass

[0404] Thereafter, the warp adjusting composition was applied to the silicone-treated surface of a PET-based isolation film (thickness 50 μm) serving as a release liner using an applicator at a thickness of 25 μm, and dried at 130° C. for 2 minutes to remove the solvent from the warp adjusting composition, thereby obtaining a warp adjusting sheet having a warp adjusting layer laminated on the release liner.

[0405] Afterwards, a laminator (manufactured by MCK, model MRK-600) was used to stick the bare wafer to the side of the warp adjustment sheet on which the peeling liner was not stacked at 60°C, 0.1 MPa, and 10 mm / s, and the wafer was placed in an oven and heated at 175°C for 1 hour to thermally cure the resin of the warp adjustment layer, thereby shrinking the warp adjustment layer to obtain a warped bare wafer.

[0406] After shrinking the warp adjustment layer, a wafer processing tape (manufactured by Nitto Denko Corporation, trade name "V-12SR2") was attached to the side of the warped bare wafer on which the warp adjustment layer was not laminated, and then a dicing ring was fixed to the warped bare wafer via the wafer processing tape. Thereafter, the warp adjustment layer was removed from the warped bare wafer.

[0407] Using a dicing apparatus (manufactured by DISCO, Model 6361), grooves 100 μm deep from the warped bare wafer were formed in a grid pattern (20 μm wide) on the entire surface (hereinafter referred to as one surface) from which the warp adjusting layer was removed.

[0408] Thereafter, a back grinding tape is bonded to one surface of the warped bare wafer, and the wafer processing tape is removed from the other surface (the surface opposite to the one surface) of the warped bare wafer.

[0409] Thereafter, the warped bare wafer was ground from the other surface using a back grinder (manufactured by DISCO Corporation, model DGP8760) until the thickness of the warped bare wafer reached 30 μm (0.030 mm), and the obtained wafer was designated as a warped wafer.

[0410] Specifically, the retention evaluation was performed as follows.

[0411] First, a cold expansion unit is used to cut the bare wafer and the chip bonding layer under the conditions of an expansion temperature of -15°C, an expansion speed of 200 mm / sec, and an expansion amount of 11 mm to obtain a semiconductor chip with a chip bonding layer.

[0412] Next, the expansion was performed at room temperature, at an expansion speed of 1 mm / sec, and at an expansion distance of 7 mm. And, while maintaining the expansion state, the dicing die bonding film at the boundary with the outer periphery of the bare wafer was thermally shrunk at a heating temperature of 200°C, an air volume of 40 L / min, a heating distance of 20 mm, and a rotation speed of 3° / sec.

[0413] Next, while the dicing die-bonding film was held with the dicing ring, the semiconductor chip with the die-bonding layer was observed from the dicing tape side (polyolefin film side as the base layer) and the contact ratio between the semiconductor chip and the die-bonding layer was calculated to evaluate the holding property.

[0414] Specifically, a microscope photograph was taken from the dicing tape side using VHX-6000 (manufactured by KEYENCE), and the taken microscope photograph was analyzed using image analysis software (ImageJ) to measure the area of ​​the portion where the semiconductor chip did not float from the die bonding layer.

[0415] The area of ​​the semiconductor chip is calculated from the size of the semiconductor chip, and the contact ratio between the semiconductor chip and the chip bonding layer is calculated from the area of ​​the semiconductor chip and the area of ​​the non-floating portion of the semiconductor chip. The retention is evaluated based on the value of the contact ratio.

[0416] The evaluation of retention was performed based on the following evaluation criteria.

[0417] ◎: Contact rate is more than 90%

[0418] ○: Contact rate is 60% or more and less than 90%

[0419] ×: Contact rate is less than 60%

[0420] The evaluation results of the retention properties are shown in Table 1 below.

[0421] [Table 1]

[0422]

[0423] It can be seen from Table 1 that in the diced chip bonding films described in Examples 1 to 6 where the Hansen solubility parameter distance Ra is greater than 3 and less than 14, the retention evaluation is ○ or ◎, and the retention is good. In addition, the amount of photopolymerization initiator transferred from the adhesive layer to the chip bonding layer is also a low value of less than 2200 ppm.

[0424] In contrast, in the dicing die-bonding film of Comparative Example 1 in which the Hansen solubility parameter distance Ra exceeded 14, the amount of photopolymerization initiator transferred from the adhesive layer to the die-bonding layer was a low value of 800 ppm, but the retention evaluation was ×, indicating poor retention.

[0425] It is also found that in the dicing die-bonding films of Comparative Examples 2 and 3 in which the Hansen solubility parameter distance Ra was less than 3, the retention evaluation was ◎, but the amount of photopolymerization initiator transferred from the adhesive layer to the die-bonding layer was a high value of 3900 ppm or more.

[0426] From these results, it is understood that the Hansen solubility parameter distance Ra needs to be 3 or more and 14 or less in order to relatively suppress chip floating after the die bonding layer is singulated and relatively suppress component migration between the die bonding layer and the adhesive layer.

[0427] It should be noted that in Table 1, only the amount of photopolymerization initiator transferred from the adhesive layer to the chip bonding layer is recorded as the component transfer between the chip bonding layer and the adhesive layer, but it can be expected that the curing accelerator (thermocuring catalyst) contained in the chip bonding layer may also transfer to the adhesive layer in the same way.

Claims

1. A dicing die bonding film comprising: A dicing tape having an adhesive layer laminated on a base material layer; and a die bonding layer laminated on the adhesive layer of the dicing tape, The adhesive layer includes an acrylic polymer having a monomer unit derived from (meth)acrylate in the molecule, The die bonding layer includes: an epoxy resin as a thermosetting resin, and an acrylic resin containing a thermosetting functional group as a thermoplastic resin having a thermosetting functional group. The Hansen solubility parameter distance Ra of the dicing die bonding film is greater than or equal to 3 and less than or equal to 14, wherein the Hansen solubility parameter distance Ra is a distance between the Hansen solubility parameter (δ dA , δ pA , δ hA ) and the Hansen solubility parameter (δ dD , δ pD , δ hD ), and calculated using the following formula (1), Ra=[4(δ dD -d dA ) 2 +(d pD -d pA ) 2 +(d hD -d hA ) 2 ] 1 / 2 …(1) in, δ dD and δ dA is the dispersion term, δ pD and δ pA is the polar term, δ hD and δ hA is the hydrogen bond term, The dispersion term δ of the Hansen solubility parameter of the adhesive layer dA The value of is greater than 14 and less than 18, The polar term δ of the Hansen solubility parameter of the adhesive layer pA The value of is greater than 2 and less than 10, The hydrogen bonding term δ of the Hansen solubility parameter of the adhesive layer hA The value of is 3 or more and 11.5 or less.

2. The dicing die-bonding film according to claim 1, wherein The dispersion term δ of the Hansen solubility parameter of the adhesive layer dA The value of the Hansen solubility parameter of the chip bonding layer is related to the dispersion term δ dD The absolute value of the difference between the values ​​of is greater than or equal to 0.4 and less than or equal to 3.0, The polar term δp of the Hansen solubility parameter of the adhesive layer A The value of the polar term δp of the Hansen solubility parameter of the chip bonding layer D The absolute value of the difference between the values ​​of is greater than or equal to 1.5 and less than or equal to 10.0, The hydrogen bonding term δ of the Hansen solubility parameter of the adhesive layer hA The value of the hydrogen bonding term δ of the Hansen solubility parameter of the chip bonding layer hD The absolute value of the difference between the values ​​of is greater than or equal to 0.5 and less than or equal to 6.

5.

3. The dicing die-bonding film according to claim 1 or 2, wherein The peeling force of the die bonding layer with respect to the adhesive layer is 0.5 N / 20 mm or more.

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