Light source calibration system and light source calibration method for wafer testing system

Abstract

The present invention discloses a light source calibration system and a light source calibration method for a wafer testing system. The wafer testing system includes a probe test machine and a test machine. The light source calibration system includes a light source machine arranged in the wafer testing system and a main execution device electrically connected to the probe test machine, the test machine and the light source machine respectively. The light source machine provides a light source for testing a wafer. The main execution device controls the probe test machine to adjust a test height for testing the wafer, and then controls the test machine to obtain image test data of the wafer at the test height from the test machine. The main execution device also analyzes the image test data to determine the light source setting parameters of the light source machine, and adjusts the light source machine according to the light source setting parameters.

Description

Technical Field

[0001] The embodiments of the present invention are related to a light source calibration system and a light source calibration method. More specifically, the embodiments of the present invention are related to a light source calibration system and a light source calibration method for a wafer testing system. Background Art

[0002] Wafer testing is aimed at confirming the yield of a wafer, which is an important step before wafer packaging in the semiconductor process. Wafer testing can be performed by a wafer testing system, and the wafer testing system generally includes a tester and a prober. When testing the charge-coupled device (CCD) or complementary metal-oxide-semiconductor image sensor (CMOS) image sensor (CIS) on the wafer, a light source machine is set up in the wafer testing system, and the light source machine provides the light source required for image testing of the wafer. Generally, due to the different characteristics of the wafer itself and the diverse models of test tools (such as probers or probe cards), before testing a wafer, the tester must first determine and decide a test height for testing the wafer (for example, adjusting the height of a carrier in the prober used to fix the wafer). In addition, since the test height will affect the lighting result of the light source machine, and the light source provided by the light source machine will gradually decay over time, the tester also needs to adjust the light source machine before testing the wafer.

[0003] Generally speaking, the calibration of the light source machine is independent of the wafer testing. In detail, after the tester decides on a test height for testing a wafer, the light source machine will be removed from the wafer testing system, and the engineering staff will calibrate the light source machine, such as operating an illuminance meter to adjust the illuminance (lux) value of the light emitted by the light source machine, or using other instruments to perform other types of adjustments on the light emitted by the light source machine (for example: the ratio of red light, green light, and blue light (RGB)). After completing the calibration of the light source machine, the light source machine will be reinstalled into the wafer testing system to provide the light source required for the wafer. If the calibration result of the light source machine is not ideal, the light source machine needs to be removed from the wafer testing system again and recalibrated by the engineering staff. This traditional light source machine calibration mode (i.e., offline calibration) has at least the following problems:

[0004] (1) In order to adjust the light source, the light source needs to be disassembled and assembled repeatedly, which will affect the adjustment speed of the light source; and

[0005] (2) Since the external environment in which the engineering staff adjusts the light source machine is inconsistent with the environment of the wafer test system, the light source provided by the light source machine adjusted in the external environment is usually different from the light source required to test the wafer, which will affect the adjustment accuracy of the light source machine. Summary of the invention

[0006] In order to solve the above problems, the present invention provides a faster and more accurate light source calibration system and method.

[0007] An embodiment of the present invention provides a light source calibration system for a wafer testing system. The wafer testing system may include a probe machine and a test machine. The light source calibration system may include a light source machine and a main execution device electrically connected to the probe machine, the test machine and the light source machine, respectively. The light source machine may be arranged in the wafer testing system, and the light source machine is used to provide a light source for testing a wafer. The main execution device may be used to control the probe machine to adjust a test height for testing the wafer. The main execution device may also be used to control the test machine to obtain image test data of the wafer at the test height from the test machine. In addition, the main execution device may also be used to analyze the image test data to determine a light source setting parameter of the light source machine, and calibrate the light source machine according to the light source setting parameter.

[0008] Optionally, the main execution device is connected to at least one on-site computer via a network interface, and analyzes the image test data through the at least one on-site computer.

[0009] Optionally, the at least one on-site computer includes a light source parameter processing module, and the light source parameter processing module is used to: collect and analyze the image test data; determine the light source setting parameters according to the image test data; and transmit the light source setting parameters to the main execution device.

[0010] Optionally, the main execution device further includes a wafer test system control module, and the wafer test system control module operates the wafer test system online.

[0011] Optionally, the main execution device further includes a light source control module, and the light source control module controls the light source machine online.

[0012] Optionally, the main execution device further includes an auxiliary execution module, and the auxiliary execution module is used to integrate and control the wafer testing system and the light source control module.

[0013] Optionally, the production management system includes a light source setting parameter database and a height setting parameter database, and the main execution device is also used to: store a test target; and when the image test data meets the test target, transmit the light source setting parameter and the height setting parameter to the light source setting parameter database and the height setting parameter database, respectively, to update the light source setting parameter database and the height setting parameter database, respectively.

[0014] Optionally, the main execution device is connected to a production management system, and before the main execution device obtains the image test data, the main execution device is also used to: obtain an initial light source setting parameter and a height setting parameter from the production management system; set the light source machine according to the initial light source setting parameter so that the wafer testing system generates the image test data; and set the probe machine according to the height setting parameter to adjust the test height.

[0015] Optionally, a test target is stored in the at least one on-site computer, and the light source parameter processing module analyzes the image test data by comparing the image test data with the test target.

[0016] Optionally, the light source setting parameters include brightness and three primary colors.

[0017] In order to at least solve the above problems, an embodiment of the present invention further provides a light source calibration method for a wafer testing system. The wafer testing system may include a probe machine and a test machine. The light source calibration method may include the following steps:

[0018] The probe tester is controlled by a main execution device to adjust a test height of a wafer;

[0019] The main execution device controls the test machine to obtain image test data of the wafer at the test height from the test machine;

[0020] The main execution device analyzes the image test data to determine a light source setting parameter of a light source machine, wherein the light source machine is arranged in the wafer test system to provide a light source for testing the wafer; and

[0021] The main execution device adjusts the light source machine according to the light source setting parameters.

[0022] Optionally, the method further comprises the following steps: the main execution device transmits the image test data to at least one on-site computer so that the image test data is analyzed by the at least one on-site computer.

[0023] Optionally, the method further comprises the following steps: collecting and analyzing the image test data by the at least one on-site computer; determining the light source setting parameters according to the image test data by the at least one on-site computer; and transmitting the light source setting parameters to the main execution device by the at least one on-site computer.

[0024] Optionally, the method further comprises the following steps: when the image test data meets a test target, the main execution device transmits the light source setting parameter and the height setting parameter to a light source setting parameter database and a height setting parameter database respectively, so as to update the light source setting parameter database and the height setting parameter database respectively.

[0025] Optionally, the method further includes the following steps: the main execution device obtains an initial light source setting parameter and a height setting parameter from a production management system; the main execution device sets the light source machine according to the initial light source setting parameter so that the wafer testing system generates the image test data; and the main execution device sets the probe machine according to the height setting parameter to adjust the test height.

[0026] Optionally, the at least one on-site computer analyzes the image test data by comparing the image test data with a test target.

[0027] Optionally, the light source setting parameters include brightness and three primary colors.

[0028] In an embodiment of the present invention, the calibration of the light source machine is not independent of the wafer test; on the contrary, the light source machine is calibrated directly in the wafer test system. In other words, in an embodiment of the present invention, there is no need to repeatedly disassemble and assemble the light source machine to perform light source calibration, so the calibration speed of the light source machine can be improved. In addition, in an embodiment of the present invention, the environment in which the light source machine is calibrated is the environment of the wafer test system, so the calibration accuracy of the light source machine can be increased. Therefore, the light source calibration system and method in the embodiment of the present invention can effectively overcome the above-mentioned problems of the traditional light source calibration method.

[0029] The summary of the invention describes the core concepts of the present invention as a whole, and covers the problems that can be solved by the present invention, the means that can be adopted, and the effects that can be achieved, so as to provide a basic understanding of the present invention by those with ordinary knowledge in the technical field to which the present invention belongs. However, it should be understood that the summary of the invention is not intended to summarize all embodiments of the present invention, but only presents the core concepts of the present invention in a simple form as an introduction to the subsequent detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 A schematic diagram of a light source calibration environment in one or more embodiments of the present invention is illustrated.

[0031] Figure 2A cross-sectional side view of a portion of the wafer testing system shown in FIG. 1 is illustrated in one or more embodiments of the present invention.

[0032] Figure 3 A schematic diagram of another light source calibration system in one or more embodiments of the present invention is illustrated.

[0033] Figure 4 A schematic diagram illustrating a production management system that implements automated synchronous operation of a plurality of wafer testing systems and a plurality of light source adjustment systems through a main execution device in one or more embodiments of the present invention is shown.

[0034] Figure 5 A schematic diagram illustrating a light source calibration method for a wafer testing system in one or more embodiments of the present invention is shown.

[0035] FIG. 6A to FIG. 6C A schematic diagram illustrating another light source calibration method for a wafer testing system in one or more embodiments of the present invention is shown.

[0036] In the figure:

[0037] 100: light source calibration environment; 11: needle test machine; 111: carrier; 112: test interface board; 113: spring pin tower;

[0038] 115: test height; 12: test platform; 122: test head; 123: test carrier; 124: image capture card;

[0039] 13: needle test card; 131: probe; 21: light source machine; 211: light source; 22: main execution device;

[0040] 301, 302, 303, 304, 305, 306, 307, 308, 309, 310, 311, 312: process;

[0041] 31: auxiliary execution module; 32: wafer test system control module; 33: light source control module;

[0042] 34: Light source parameter processing module; 39: Production management system; 391: Light source setting parameter database;

[0043] 392: Height setting parameter database; 393: Engineering setting parameter database; 5: Light source calibration method;

[0044] 501, 502, 503, 504: Steps; 6: Light source adjustment method;

[0045] 601, 602, 603, 604, 605, 606, 607, 608, 609, 610, 611: steps;

[0046] 9: wafer; S1, S2, S3: on-site computers; X, Y, Z: axes. DETAILED DESCRIPTION

[0047] The various embodiments described below are not intended to limit the present invention to be implemented only in the described environment, application, structure, process or step. In the accompanying drawings, components that are not directly related to the present invention have been omitted. In the accompanying drawings, the size of each component and the ratio between each component are only examples and are not intended to limit the present invention. Unless otherwise specified, in the following content, the same (or similar) component symbols can correspond to the same (or similar) components.

[0048] Figure 1 A schematic diagram of a light source calibration environment in one or more embodiments of the present invention is illustrated. Figure 1 The contents shown are only for illustrating the embodiments of the present invention, and are not intended to limit the present invention.

[0049] Reference Figure 1 , a light source calibration environment 100 can basically include a wafer testing system and a light source calibration system. The wafer testing system can basically include a probe machine 11 and a test machine 12. The light source calibration system can basically include a light source machine 21 and a main execution device 22. The main execution device 22 can be used in the wafer testing system, and can basically be a computer or a computer. The light source machine 21 can be set in the wafer testing system to provide the light source required for the wafer testing system to test a wafer. For example, in some embodiments, the light source machine 21 can include a light emitting diode (LED) light source and a light source controller that controls the light emitting diode light source.

[0050] The probe tester 11, the tester 12, and the light source 21 can all be electrically connected to the main execution device 22, and the electrical connection can be direct (i.e., not connected to each other through other components) or indirect (i.e., connected to each other through other components). For example, in some embodiments, the main execution device 22 can be electrically connected to the probe tester 11 through a general purpose interface bus (GPIB), and electrically connected to the tester 12 through an input / output (I / O) cable. In addition, the main execution device 22 can be electrically connected to the light source 21 through an asynchronous data transmission standard interface (e.g., RS-232, RS-422, RS-423, RS-449, etc.). In some embodiments, optionally, the main execution device 22 can also be electrically connected to one or more site computers S1, S2, S3, ..., for example, connected to each other through various network interfaces. The network interface can be various Internet interfaces, various local area network interfaces, or various wireless network interfaces. The on-site computers S1 , S2 , and S3 can provide computing capabilities to enhance the computing performance of the main execution device 22 .

[0051] The main execution device 22 may basically include at least one processor, at least one storage device, and at least one input / output interface. The processor may be a microprocessor or microcontroller with signal processing functions. A microprocessor or microcontroller is a programmable special integrated circuit that has the capabilities of operation, storage, output / input, etc., and can accept and process various coded instructions to perform various logical operations and arithmetic operations and output corresponding operation results. The processor may be programmed to interpret various instructions to execute various operation programs, algorithms or programs on the data in the main execution device 22. The storage device may be used to store data generated by the main execution device 22, data transmitted from an external device, or data input by the user. The storage device may include a first-level memory (also known as a main memory or an internal memory), and the processor may directly read the instruction set stored in the first-level memory and execute these instruction sets when necessary. In addition to the first-level memory, the storage device may optionally also include a second-level memory (also known as an external memory or an auxiliary memory), and this memory may transmit the stored data to the first-level memory through a data buffer. For example, the second-level memory may be, but is not limited to: a hard disk, an optical disk, etc. In addition to the first-level memory, the storage may optionally include a third-level memory, that is, a storage device that can be directly inserted into or removed from the computer, such as a portable hard disk. The input / output interface can be used to transmit various data generated by the main execution device 22 to the outside, and various external data can be transmitted to the main execution device 22. In some embodiments, the input / output interface may include a user interface for a user to use the user interface to control the needle test machine 11, the test machine 12 and the light source machine 21. In some embodiments, the main execution device 22 may also include a network interface for communicating with an external device via a network. The network may include a wired network and / or a wireless network.

[0052] The following will be Figure 2 Take the example to illustrate the basic operation of the wafer test system. Figure 2 The content shown is not intended to limit the structure of the probe machine 11 and the test machine 12. In detail, Figure 2 In one or more embodiments of the present invention, Figure 1 A cross-sectional side view of a portion of a wafer test system is shown. Figure 2 The contents shown are only for the purpose of explaining the embodiments of the present invention, but not for limiting the present invention.

[0053] Also refer to Figure 1 and Figure 2, the test machine 12 can be used to generate test signals required for testing a wafer, such as test signals for electrical testing or image testing. For example, in some embodiments, the test machine 12 may include a test host (not shown in the figure) and a test head 122 electrically connected to the test host and controlled by the test host. The test head 122 may include a test carrier 123, and a plurality of test cards may be inserted on the test carrier 123 to provide various test programs. These test cards may be, for example, a pin circuit card (Pin Electronics card, PE card), a sequence test card (SEQ card), a device power supply card (Device Power Supply, DPS card), etc. A plurality of image capture cards 124 may be arranged between the test carrier 123 and a test interface board 112 of the probe test machine 11 to perform image data transmission (optical data transmission) between the probe test machine 11 and the test machine 12.

[0054] In some embodiments, the probe test station 11 may include a probe test base 110, a test interface board 112, and a pogo tower 113. The test interface board 112 may be electrically connected to a probe card 13 through the pogo tower 113. The probe card 13 may include a plurality of probes 131, and the plurality of probes 131 are used to contact a plurality of dies on a wafer 9. The probe test base 110 may include a carrier 111, and the carrier 111 may be used to load the wafer 9 and load the wafer 9 from a bottom of the probe test base 110 to a test height 115, so that the probes 131 on the probe test card 13 can appropriately contact the wafer 9. The test signal in the test head 122 can be transmitted to the probe 131 of the probe card 13 via the test carrier 123, the image capture card 124, the test interface board 112 and the spring pin tower 113 to perform electrical testing or image testing on the wafer 9, and the light source 21 disposed on the test interface board 112 of the probe test machine 11 can provide a light source 211 during the process of testing the wafer 9. The test interface board 112 and the probe card 13 each have a cavity in the center so that the light source 211 provided by the light source 21 can irradiate the wafer 9 through the cavity.

[0055] Figure 2 The configuration of the light source machine 21 shown is not limiting and is based on the architecture of the wafer test system. In the case where the light source machine 21 is capable of transmitting the light source 211 to the wafer 9, the light source machine 21 can be set on the test machine 12, the probe machine 11, the probe card 13, or any of their derivative accessories.

[0056] Figure 3 FIG. 1 is a schematic diagram illustrating another light source calibration system in one or more embodiments of the present invention. Figure 3As shown, the main execution device 22 can basically include an auxiliary execution module 31, a wafer test system control module 32 and a light source control module 33. The auxiliary execution module 31, the wafer test system control module 32 and the light source control module 33 can be pre-constructed and stored in the main execution device 22 by hardware, software, firmware or a combination thereof. The wafer test system control module 32 can be used to control the probe machine 11 and the test machine 12 in the wafer test system, and the light source control module 33 can be used to control the light source machine 21. The light source parameter processing module 34 can be included in the on-site computers S1, S2, S3, ..., and can be used to collect and analyze various data related to light source adjustment, and can transmit the analysis results to the main execution device 22, and the main execution device 22 further sends various control instructions to the wafer test system control module 32 and the light source control module 33. For example, in some embodiments, the auxiliary execution module 31 of the main execution device 22 can run an equipment automation program (EAP) to integrate and control the wafer test system control module 32 and the light source control module 33, so that the wafer test system control module 32 and the light source control module 33 perform the various operations described in this document, thereby realizing the full automation operation of the main execution device 22 and the wafer test system.

[0057] like Figure 3 As shown, the auxiliary execution module 31 of the main execution device 22 can be coupled with the production management system 39 for communication. The production management system 39 can include a light source setting parameter database 391, a height setting parameter database 392 and an engineering setting parameter database 393. The engineering setting parameter database 393 is used to store engineering setting parameters (such as configuration files, test specifications, etc.) as the setting basis of the wafer test system. The light source setting parameter database 391 is used to store ideal light source setting parameters (Light Source Golden Data) as the setting basis of the light source machine 21. The height setting parameter database 392 is used to store height setting parameters as the adjustment basis of the test height of the wafer 9. With the change of the application environment (for example, different models of needle test machines 11 or needle test cards 13, different characteristics of wafers 9, or different models of light source machines 21, different test purposes, etc.).

[0058] In some embodiments, the height setting parameters stored in the height setting parameter database 392 may include: parameters such as a current specification provided to the probe card 13, an upper limit value and a lower limit value of a current signal and a probe stroke (overdrive, OD), and a control gear for the rise / fall of the "Z-axis height" of the carrier 111 of the probe test machine 11, so that the Z-axis height of the carrier 111 can be adjusted by observing the open / short circuit (open / short) changes of the current provided to the probe card 13 when the probe 131 touches the wafer 9 (for example: the changes when the first probe 131 touches the wafer 9 and when all the probes 131 touch the wafer 9), and whether the probe length difference of the probe test card 13 meets the requirements can be determined by comparing the change in the Z-axis height of the carrier 111 when the probe 131 touches the wafer 9 with the upper limit value and the lower limit value of the probe stroke.

[0059] In some embodiments, the production management system 39 may be a cloud server, which is connected and communicated with the auxiliary execution module 31 via various types of networks. In some embodiments, the production management system 39 may be an electronic device located in the same field as the wafer testing system and the light source adjustment system, and is connected and communicated with the auxiliary execution module 31 via a connecting cable. In this case, the user can log in to the production management system 39 through a user interface (UI) or a network interface, and construct a light source setting parameter database 391, a height setting parameter database 392, and an engineering setting parameter database 393, and upload relevant data to these databases or update the data in these databases.

[0060] like Figure 3 As shown, before the wafer testing system starts testing the wafer 9 , the auxiliary execution module 31 can obtain the height setting parameters about the wafer 9 and the probe machine 11 from the height setting parameter database 393 in the production management system 39 (labeled as process 301 ).

[0061] After obtaining the height setting parameter, the auxiliary execution module 31 may transmit a control command to the wafer test system control module 32 according to the height setting parameter (indicated as process 302), and then the wafer test system control module 32 may set the carrier 111 of the probe tester 11 to a test height 115 suitable for the wafer 9 according to the control command, that is, the "Z-axis height" setting of the carrier 111 (indicated as process 303). For example, in some embodiments, the auxiliary execution module 31 may transmit the control command to the wafer test system control module 32 based on the User Datagram Protocol (UDP).

[0062] The auxiliary execution module 31 can obtain the initial light source setting parameters suitable for the light source machine 21 from the light source setting parameter database 391 in the production management system 39 (indicated as process 304). In addition, the auxiliary execution module 31 can also obtain the engineering setting parameters suitable for the wafer 9, the detection machine 11 and the test machine 12 from the engineering setting parameter database in the production management system 39 to set the wafer test system (indicated as process 305). After setting the Z-axis height of the carrier 111 (i.e., the test height 115), the auxiliary execution module 31 can integrate the initial light source setting parameters and the engineering setting parameters, and generate control instructions for optical testing based on the integrated parameters, and then send the control instructions to the wafer test system control module 32 and the light source control module 33 respectively (indicated as process 306). The light source control module 33 can set the light source 21 according to the integrated parameters according to the control instruction of the auxiliary execution module 31, and the wafer test system control module 32 can control the probe machine 11 and the test machine 12 to perform various optical tests (e.g., image tests) on the wafer 9 according to the integrated parameter settings according to the control instruction of the auxiliary execution module 31 (labeled as process 307). After performing the optical test on the wafer 9, the wafer test system control module 32 can obtain the image test data obtained by testing the wafer 9 from the test machine 12 (labeled as process 308).

[0063] In some embodiments, after obtaining the image test data of the wafer 9, the wafer test system control module 32 may distribute the image test data to the on-site computers S1, S2, S3, ... (marked as process 309), and the on-site computers S1, S2, S3, ... analyze the image test data to obtain a set of optical parameters (such as brightness, three primary colors and their derived parameters, etc.) of each bare die in contact with the probe 131 of the needle test card 13 from the image test data, wherein each of the on-site computers S1, S2, S3, ... may be an image processing computer with image processing capabilities. Then, the auxiliary execution module 31 may obtain the light source setting parameters from the light source setting module of the on-site computers S1, S2, S3, ..., and the light source setting module may collect and calculate the light source setting parameters (marked as process 310). In some embodiments, the main execution device 22 may also include a transceiver, which may support at least one TCP / IP communication protocol, so that the light source setting parameters can be transmitted through TCP / IP packets.

[0064] In some embodiments, the number of on-site computers S1, S2, S3, ... may be consistent with the number of bare die in wafer 9 that are in contact with probe card 13 and tested each time. For example, assuming that the number of bare die in wafer 9 that are in contact with probe card 13 and tested each time is thirty-two, thirty-two on-site computers S1, S2, S3, ... may be set, wherein each on-site computer S1, S2, S3, ... is used to analyze the image test data of the bare die in contact with a corresponding probe 131. In some embodiments, the number of on-site computers S1, S2, S3, ... may also be inconsistent with the number of bare die in wafer 9 that are in contact with probe card 13 each time.

[0065] In some embodiments, after obtaining the image test data of the wafer 9, the wafer test system control module 32 may also transmit the image test data to the auxiliary execution module 31, and the auxiliary execution module 31 may analyze the image test data alone, or the auxiliary execution module 31 and the on-site computers S1, S2, S3, ... may jointly analyze the image test data to obtain a light source test result (such as brightness, test values ​​of three primary colors and their derived parameters, etc.) for each bare crystal that contacts the probe 131 of the needle test card 13 from the image test data.

[0066] The auxiliary execution module 31 can determine whether each light source test result meets a test target stored in the main execution device 22 or not. Alternatively, the on-site computers S1, S2, S3, ... can determine whether each light source test result meets a test target stored therein. The test target represents an ideal test result that the wafer test system expects to obtain after performing various optical tests (e.g., image tests) on the wafer 9. For example, the test target can be expressed as an ideal value or an ideal range of various optical parameters. If the comparison result meets a preset threshold value (e.g., each light source test result reaches the test target), there is no need to adjust the light source parameter configuration of the light source machine 21, and the light source calibration process is terminated. However, if the comparison result does not meet the preset threshold value (e.g., the error is greater than 3%), the auxiliary execution module 31 can determine a new light source setting parameter, and transmit a control command (e.g., a process call) to the light source control module 33 (marked as process 311) according to the new light source setting parameter. Then, the light source control module 33 may transmit the new light source setting parameter to the light source machine 21 according to the control command to adjust the light source parameter configuration of the light source machine 21 (indicated as process 312 ).

[0067] For example, in some embodiments, the light source setting parameters determined by the auxiliary execution module 31 for the light source machine 21 may include setting values ​​of the brightness of the light source machine 21, red light, green light, blue light (i.e., the three primary colors of light), or their derived parameters (such as the green-blue light ratio, the red-blue light ratio).

[0068] After completing the setting of the light source parameters of the light source machine 21, the process 307 to the process 312 can be repeatedly executed until the current comparison result meets the above-mentioned preset threshold. In some embodiments, when the comparison result meets the above-mentioned preset threshold, it means that the light source setting of the light source machine 21 and the test height of the carrier 111 of the needle test machine 11 are both ideal at this time, so the auxiliary execution module 31 can transmit the light source setting parameters and the height setting parameters of the carrier 111 corresponding to the test height to the production management system 39 to update the light source setting parameter database 391 and the height setting parameter database 392 therein respectively. The above-mentioned update mechanism will help to improve the adjustment efficiency and adjustment accuracy of the light source machine 21. In some embodiments, if necessary, the engineering personnel can also update the data of the engineering setting parameter database 393 in the production management system 39. In view of this, the data in the light source setting parameter database 391, the height setting parameter database 392 and the engineering setting parameter database 393 in the production management system 39 can be continuously updated to automatically adapt to the various setting parameters required by various models of needle testing machines, test machines, and light source machines, thereby fully automatically performing image adjustment and testing operations of CMOS image sensors, greatly improving the work efficiency of early engineering personnel.

[0069] Figure 4 A schematic diagram illustrating a production management system that implements automated synchronous operation of a plurality of wafer testing systems and a plurality of light source adjustment systems through a main execution device in one or more embodiments of the present invention is shown. Figure 4 The content shown is only for the convenience of explaining the embodiments of the present invention, and is not intended to limit the present invention. In some embodiments, such as Figure 4 As shown, the production management system 39 can have built-in Computer Integrated Manufacturing (CIM), Product Development System (PDS) and Manufacturing Execution System (MES), and be coupled with multiple wafer testing systems and light source adjustment systems to realize the automated synchronous operation of multiple wafer testing systems and light source adjustment systems, and achieve production management of a fully automated unmanned semiconductor testing plant.

[0070] Figure 5 A schematic diagram illustrating a light source calibration method for a wafer testing system in one or more embodiments of the present invention is shown. Figure 5 The contents shown are only for illustrating the embodiments of the present invention, and are not intended to limit the present invention.

[0071] Figure 5A light source calibration method 5 for a wafer testing system is presented, and the wafer testing system includes a probe machine and a test machine. The light source calibration method 5 may include the following steps:

[0072] The probe tester is controlled by a main execution device to adjust a test height of a wafer (indicated as step 501);

[0073] The main execution device controls the test machine to obtain image test data of the wafer at the test height from the test machine (marked as step 502);

[0074] The main execution device analyzes the image test data to determine a light source setting parameter of a light source machine, wherein the light source machine is arranged in the wafer test system to provide a light source for testing the wafer (indicated as step 503); and

[0075] The main execution device adjusts the light source according to the light source setting parameters (indicated as step 504).

[0076] Figure 5 The order of steps 501 to 504 shown is not limiting, and the order of steps 501 to 504 can be adjusted arbitrarily while still being able to implement the light source calibration method 5 .

[0077] In some embodiments, the light source calibration method 5 further includes the following steps: the main execution device transmits the image test data to at least one on-site computer, so that the at least one on-site computer analyzes the image test data.

[0078] In some embodiments, the light source calibration method 5 further comprises the following steps:

[0079] The main execution device transmits the image test data to at least one on-site computer so that the image test data is analyzed by the at least one on-site computer;

[0080] collecting and analyzing the image test data by the at least one on-site computer;

[0081] Determining the light source setting parameters according to the image test data by the at least one on-site computer; and

[0082] The at least one on-site computer transmits the light source setting parameters to the main execution device.

[0083] In some embodiments, the light source calibration method 5 further comprises the following steps:

[0084] The main execution device transmits the image test data to at least one on-site computer so that the image test data is analyzed by the at least one on-site computer;

[0085] collecting and analyzing the image test data by the at least one on-site computer;

[0086] Determining the light source setting parameters according to the image test data by the at least one on-site computer; and

[0087] The at least one on-site computer transmits the light source setting parameters to the main execution device;

[0088] The at least one on-site computer analyzes the image test data by comparing the image test data with a test target.

[0089] In some embodiments, the light source calibration method 5 further comprises the following steps:

[0090] The main execution device obtains an initial light source setting parameter and a height setting parameter from a production management system;

[0091] The main execution device sets the light source according to the initial light source setting parameters so that the wafer testing system generates the image testing data; and

[0092] The main execution device sets the probe test platform according to the height setting parameter to adjust the test height.

[0093] In some embodiments, the light source calibration method 5 further comprises the following steps:

[0094] The main execution device obtains an initial light source setting parameter and a height setting parameter from a production management system;

[0095] The main execution device sets the light source according to the initial light source setting parameters so that the wafer testing system generates the image testing data;

[0096] The main execution device sets the probe tester according to the height setting parameter to adjust the test height; and

[0097] When the image test data meets a test target, the main execution device transmits the light source setting parameter and the height setting parameter to a light source setting parameter database and a height setting parameter database respectively, so as to update the light source setting parameter database and the height setting parameter database respectively.

[0098] In some embodiments, regarding the light source adjustment method 5 , the light source setting parameters may include brightness and three primary colors.

[0099] As for other embodiments of the light source adjustment method 5, they have been included in the above Figures 1 to 3 The above is not described in detail here.

[0100] FIG. 6A to FIG. 6CA schematic diagram illustrating another light source calibration method for a wafer testing system in one or more embodiments of the present invention is shown. FIG. 6A to FIG. 6C The contents shown are only for illustrating the embodiments of the present invention, and are not intended to limit the present invention.

[0101] Reference FIG. 6A to FIG. 6C First, a height setting parameter database of a production management system can transmit a height setting parameter to a wafer test system control module via an auxiliary execution module of a main execution device, so that the wafer test system control module can send a control command to a wafer test system to set the height of a carrier of a probe machine of the wafer test system (marked as step 601). After completing the carrier height setting, an engineering setting parameter database and a light source setting parameter database of the production management system can transmit an engineering setting parameter and a light source setting parameter to the auxiliary execution module (marked as step 602). Then, after receiving the engineering setting parameter and the light source setting parameter, the auxiliary execution module can integrate the engineering setting parameter and the light source setting parameter, and transmit these parameters to the wafer test system control module to notify the wafer test system control module to drive the wafer test system to perform image testing (marked as step 603). More specifically, the wafer test system control module can notify the wafer test system to set the light source according to the light source setting parameters, and set other components of the wafer test system according to the engineering setting parameters, so that the wafer test system is driven to perform image testing.

[0102] After the wafer test system completes the image test, the wafer test system control module may obtain an image test data from the wafer test system (indicated as step 604), and then the auxiliary execution module may determine whether the image test data is within a standard range or within a range that cannot be automatically adjusted (indicated as step 605). Specifically, the auxiliary execution module may compare the image test data with a test target stored in the auxiliary execution module to determine whether the image test data is within the standard range or within a range that cannot be automatically adjusted. In some embodiments, at least one on-site computer connected to the main execution device may also store the test target to facilitate subsequent optical parameter analysis.

[0103] If the result of the auxiliary execution module's judgment is no, it means that the light source setting parameters of the light source machine can still be adjusted through the light source calibration system, so the auxiliary execution module can calculate a new light source setting parameter based on the image test data and the test target, or transmit the light source setting parameter and the image test data to the at least one on-site computer, so that a light source parameter processing module of the at least one on-site computer can calculate the new light source setting parameter based on the image test data and the test target, and return the new light source setting parameter to the auxiliary execution module (marked as step 606). Then, the auxiliary execution module can transmit the new light source setting parameter to the light source machine control module so that the light source machine control module can update the settings of the light source machine (marked as step 607). Then, process 603 can be performed again, that is, the auxiliary execution module again notifies the wafer test system control module to drive the wafer test system to perform image testing.

[0104] If the result of the auxiliary execution module's judgment is yes, the auxiliary execution module can further determine whether the image test data is within a range that cannot be automatically adjusted (marked as step 608). If the result of the auxiliary execution module's judgment is yes, it means that the image test result may not need to be adjusted because it is within the standard range defined by the test target. At this time, the auxiliary execution module can transmit the light source setting parameters and the height setting parameters of the needle test machine to the light source setting parameter database and the height setting parameter database (marked as step 609), and the production management system can update the light source setting parameter database and the height setting parameter database accordingly (marked as step 610). If the result of the auxiliary execution module's judgment is no, it means that the gap between the image test result and the test target is too large, and the automated adjustment mode may not be applicable. In view of this, the engineering personnel can directly update the light source setting parameters of the light source machine through the production management system, or update the light source setting parameters through a user interface provided by the auxiliary execution module, and transmit the new light source setting parameters to the light source setting parameter database (marked as step 611) to update the database.

[0105] The above-described embodiments are only preferred embodiments for fully illustrating the present invention, and the protection scope of the present invention is not limited thereto. Equivalent substitutions or changes made by those skilled in the art based on the present invention are within the protection scope of the present invention. The protection scope of the present invention shall be subject to the claims.

Claims

1. A light source calibration system for a wafer testing system, characterized in that: The wafer testing system includes at least one on-site computer, a probe machine and a test machine, and the light source adjustment system includes: A light source device is arranged in the wafer testing system to provide a light source for testing a wafer; and A main execution device is electrically and mechanically connected to the at least one on-site computer, the probe tester, the tester and the light source, and is also connected to a production management system. The main execution device is used to: Obtaining an initial light source setting parameter and a height setting parameter from the production management system, wherein the initial light source setting parameter and the height setting parameter respectively correspond to setting results of the light source machine and the probe test machine when a test target is met; The probe tester is set according to the height setting parameter to adjust a test height of the wafer so that a plurality of probes of the probe tester contact a plurality of corresponding bare dies on the wafer; Setting the light source according to the initial light source setting parameters to allow the wafer testing system to perform an optical test on the wafer to generate an image test data; Controlling the test machine to obtain from the test machine the image test data of the plurality of bare dies corresponding to the wafer contacted by the plurality of probes at the test height; Analyzing the image test data together with the at least one on-site computer to determine a light source setting parameter of the light source device; as well as The light source machine is adjusted according to the light source setting parameters.

2. The light source calibration system for a wafer testing system according to claim 1, wherein: The at least one on-site computer includes a light source parameter processing module, and the light source parameter processing module is used to: Collect and analyze the imaging test data; Determine the light source setting parameters according to the image test data; and The light source setting parameters are transmitted to the main execution device.

3. The light source calibration system for a wafer testing system according to claim 1, wherein: The main execution device also includes a wafer test system control module, and the wafer test system control module is connected to operate the wafer test system.

4. The light source calibration system for a wafer testing system according to claim 1, wherein: The main execution device also includes a light source control module, and the light source control module is connected to control the light source machine.

5. The light source calibration system for a wafer testing system as claimed in claim 4, characterized in that: The main execution device further includes an auxiliary execution module, and the auxiliary execution module is used for integrating and controlling the wafer testing system and the light source control module.

6. The light source calibration system for a wafer testing system according to claim 1, wherein: The production management system includes a light source setting parameter database and a height setting parameter database, and the main execution device is also used to: storing another test object; and When the image test data meets the another test target, the light source setting parameter and the height setting parameter are respectively transmitted to the light source setting parameter database and the height setting parameter database to respectively update the light source setting parameter database and the height setting parameter database.

7. The light source calibration system for a wafer testing system as claimed in claim 2, characterized in that: Another test target is stored in the at least one on-site computer, and the light source parameter processing module analyzes the image test data by comparing the image test data with the other test target.

8. The light source calibration system for a wafer testing system according to claim 1, wherein: The light source setting parameters include brightness and three primary colors.

9. A light source calibration method for a wafer testing system, characterized in that: The wafer testing system includes at least one on-site computer, a probe machine and a test machine. The light source adjustment method includes the following steps: A main execution device controls to obtain an initial light source setting parameter and a height setting parameter from a production management system, wherein the initial light source setting parameter and the height setting parameter respectively correspond to setting results of a light source machine and the needle test machine when a test target is met; The main execution device sets the light source according to the initial light source setting parameters, so that the wafer testing system performs an optical test on the wafer to generate an image test data; The main execution device sets the probe tester according to the height setting parameter to adjust a test height of a wafer so that a plurality of probes of the probe tester contact a plurality of corresponding bare dies on the wafer; The main execution device controls the test machine to obtain the image test data of the plurality of bare dies on the wafer contacted by the plurality of probes at the test height from the test machine; The main execution device and the at least one on-site computer jointly analyze the image test data to determine a light source setting parameter of the light source machine, wherein the light source machine is arranged in the wafer test system to provide a light source for testing the wafer; as well as The main execution device adjusts the light source machine according to the light source setting parameters.

10. The light source calibration method for a wafer testing system according to claim 9, wherein: It also includes the following steps: collecting the image test data by the at least one on-site computer; Determining the light source setting parameters according to the image test data by the at least one on-site computer; as well as The at least one on-site computer transmits the light source setting parameters to the main execution device.

11. The light source calibration method for a wafer testing system according to claim 9, wherein: It also includes the following steps: When the image test data meets another test target, the main execution device transmits the light source setting parameter and the height setting parameter to a light source setting parameter database and a height setting parameter database respectively to update the light source setting parameter database and the height setting parameter database respectively.

12. The light source calibration method for a wafer testing system according to claim 9, wherein: The at least one on-site computer analyzes the image test data by comparing the image test data with another test object.

13. The light source calibration method for a wafer testing system according to claim 9, wherein: The light source setting parameters include brightness and three primary colors.

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