Substrate Processing Equipment and Substrate Processing Method

Abstract

The present disclosure relates to a substrate processing apparatus and a substrate processing method. The substrate processing apparatus includes: a chamber having a processing space; a gas supply unit configured to supply a processing gas into the processing space; a substrate support disposed in the processing space to support a substrate at a central region; a hollow pressing unit disposed along a circumference of the substrate to press an edge of the substrate when descending in the processing space; and a driving unit configured to provide a driving force for vertical movement of the pressing unit.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method, and more particularly, to a substrate processing apparatus and a substrate processing method capable of performing a processing process on a substrate while pressing the substrate. Background Art

[0002] Generally, semiconductor devices or display panels are manufactured through a processing process including various processes that process a substrate using plasma, such as etching, ashing, deposition, and cleaning. Among these processes, the etching process selectively removes a laminated thin film. The etching process is classified into wet etching that etches using a solution and dry etching that etches using a reactive gas. Specifically, for dry etching, a wafer having an insulating layer or a metal layer laminated thereon is loaded into a sealed processing chamber, and an etching reactive gas is injected into the processing chamber. Thereafter, a plasma gas state is formed by applying high-frequency or microwave power to etch the insulating layer or the metal layer. Dry etching does not require a cleaning process after etching the wafer and etches the insulating layer or the metal layer anisotropically. Therefore, dry etching is currently used for most etching processes.

[0003] However, a heat treatment process may be performed on a substrate applied to an etching process before performing the etching process. During the heat treatment process, warpage deformation may occur at the edge of the substrate. When warpage deformation occurs, the process and the reliability of the process may be limited. More specifically, when performing an etching process on a warped substrate, parasitic plasma may be generated on the back surface of the bent portion, and physical damage may be caused to the substrate and the substrate support. Therefore, the etching rate and the etching uniformity may be reduced.

[0004] Generally, alignment methods using various devices have been proposed to minimize processes performed in a state where a substrate is deformed. Korean Patent Laid-Open No. 10-2005-0109443 discloses a method of adjusting the position of a deformed substrate through a shape compensation device that supports the substrate. However, the disclosed apparatus and method have limitations in performing a process in a state where the deformed portion of the substrate is straightened into a flat state. Therefore, there is a need for an apparatus and a method capable of performing a process in a state where the deformed portion of the substrate is straightened into a flat state.

[0005] Prior Art Documents

[0006] (Patent Document 1) KR 10-2005-0109443 A Summary of the Invention

[0007] The present disclosure relates to a substrate processing apparatus capable of performing a processing process while pressing a substrate and a substrate processing method.

[0008] The present disclosure relates to a substrate processing apparatus capable of performing a processing process while pressing and correcting a substrate, and a substrate processing method.

[0009] According to an exemplary embodiment, a substrate processing apparatus includes: a chamber having a processing space; a gas supply unit configured to supply a processing gas into the processing space; a substrate support disposed in the processing space to support a substrate at a central region; a hollow pressing unit disposed along a circumference of the substrate to press an edge of the substrate when descending in the processing space; and a driving unit configured to provide a driving force for vertical movement of the pressing unit.

[0010] The pressing unit may include: an edge clamp including a through hole at its center; and an annular pushing ring coupled to the edge clamp and configured to press the edge of the substrate.

[0011] The substrate support may include a protruding cover at an edge region, and the pushing ring may include: a frame formed of an annular plate extending along the circumference of the substrate; and a pressing portion extending downward from the frame to contact the edge of the substrate, and as the pushing ring descends, the frame may form a spaced space between a bottom surface of the frame and a top surface of the cover.

[0012] A plurality of pressing portions may be provided, the pressing portions may have a finger shape, a length of the finger shape in an extending direction is greater than a width perpendicular to the extending direction, and the plurality of pressing portions may be spaced apart from each other by an equal distance along the circumference of the substrate.

[0013] The pressing portion having a finger shape may be made of an elastic material.

[0014] The pressing portion may extend along the edge of the substrate and contact an edge surface of the substrate.

[0015] The pressing portion may include an inclined surface on at least a part of a surface thereof facing the processing space, the inclined surface being inclined toward a top surface of the substrate support.

[0016] The inclined surface may have an inclination with respect to the top surface of the substrate support, the inclination being gentler at an inner side of the inclined surface than at an outer side.

[0017] The pushing ring may include a communication channel passing therethrough to communicate the spaced space with the processing space.

[0018] A plurality of communication channels may be provided, and the plurality of communication channels may be spaced apart from each other by an equal distance along the circumference of the substrate.

[0019] The edge clamp may have an inner surface inclined downward and inward toward a center of the edge clamp.

[0020] The substrate support may further include a plurality of through holes passing through in the vertical direction and a plurality of lifting pins disposed in the plurality of through holes, and the driving unit may support the plurality of lifting pins and allow the plurality of lifting pins to move at least partially together in the vertical direction while moving the pressing unit.

[0021] The driving unit may include: a support plate disposed below the substrate support to support the lifting pins; a connection part configured to connect the pressing unit and the support plate; and a driving member configured to provide a driving force for the vertical movement of the support plate. Here, the connection part may have a height greater than the height of each of the lifting pins.

[0022] The substrate processing apparatus may further include: an electrode unit disposed in the chamber to generate plasma in the processing space; and a power unit configured to apply power to the electrode unit to generate plasma at an upper portion of the substrate support.

[0023] According to another exemplary embodiment, a substrate processing method includes: placing a substrate at a central region of a substrate support disposed in a processing space; pressing an edge of the substrate by allowing a ring-shaped pressing unit disposed along a circumference of the substrate placed on the substrate support to descend; and performing a processing process on the substrate by injecting a processing gas onto the pressed substrate.

[0024] Placing the substrate may include: transferring the substrate to the lifting pins disposed at the central region; and allowing the lifting pins and the pressing unit to descend simultaneously.

[0025] Performing a processing process on the substrate may include discharging a processing gas between at least a part of a bottom surface of the pressing unit and a top surface of an edge of the substrate support while the pressing unit presses the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The exemplary embodiments may be understood in more detail from the following description taken in conjunction with the accompanying drawings, in which:

[0027] Figure 1 is a cross-sectional view showing a substrate processing apparatus according to an exemplary embodiment.

[0028] Figure 2 is a cut perspective view showing a substrate processing apparatus according to an exemplary embodiment.

[0029] Figure 3 is a partial cross-sectional view showing a substrate processing apparatus according to an exemplary embodiment.

[0030] Figure 4 is a partial cross-sectional view showing the movement of a pressing unit according to an exemplary embodiment.

[0031] Figure 5 (a) shows a perspective view of a push ring according to an exemplary embodiment.

[0032] Figure 5 (b) shows a perspective view of a push ring according to another exemplary embodiment.

[0033] Figure 5 (c) shows a perspective view of a push ring according to still another exemplary embodiment.

[0034] Figure 5 (d) shows a perspective view of a push ring according to yet another exemplary embodiment.

[0035] Figure 6 is a view showing a state in which a substrate is loaded into a chamber according to an exemplary embodiment.

[0036] Figure 7 is a view showing a state in which a substrate is placed on a substrate support according to an exemplary embodiment.

[0037] Figure 8 is a view showing a state in which a substrate is pressed according to an exemplary embodiment.

[0038] Figure 9 is a flowchart showing a substrate processing method according to an exemplary embodiment. Detailed Description

[0039] Hereinafter, specific embodiments will be described in detail with reference to the accompanying drawings. However, the present disclosure may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, like reference numerals always refer to like elements.

[0040] A substrate processing apparatus according to an exemplary embodiment may perform a processing operation on a substrate in a chamber in a state where the substrate is pressed during a semiconductor manufacturing process, and the processing operation is performed in the chamber.

[0041] Figure 1 is a cross-sectional view showing a substrate processing apparatus according to an exemplary embodiment, Figure 2 is a cutaway perspective view showing a substrate processing apparatus according to an exemplary embodiment, Figure 3 is a partial cross-sectional view showing a substrate processing apparatus according to an exemplary embodiment, and Figure 4 is a partial cross-sectional view showing the movement of a pressing unit according to an exemplary embodiment.

[0042] Refer to Figures 1 to 4, the substrate processing apparatus 100 according to an exemplary embodiment may include: a chamber 110 including a processing space; a gas supply unit (not shown) that supplies a processing gas into the processing space; a substrate support 120 disposed in the processing space to support a substrate S placed on a central region 121; a pressing unit 130 having an annular shape along the circumference of the substrate S to uniformly press an edge of the substrate S according to a downward movement in the processing space; and a driving unit 140 that provides a driving force to vertically move the pressing unit 130.

[0043] The chamber 110 may include an internal processing space. Here, the processing space may refer to a region for performing a processing process on the substrate S in the internal space of the chamber 110. That is, when the processing gas is supplied from the gas supply unit to the processing space, the processing process may be performed on the substrate S placed in the processing space by the processing gas. For example, the processing process may include a fabrication (FAB) process performed on the substrate S, such as deposition, etching, and ashing. In addition, the chamber 110 may include a processing chamber capable of performing a process. However, the exemplary embodiment is not limited thereto. For example, the chamber 110 may have various structures and shapes.

[0044] The gas supply unit (not shown) may supply the processing gas into the chamber 110. For example, the gas supply unit may be installed in the chamber 110 to supply the processing gas, or installed outside the chamber 110 to supply the processing gas into the chamber 110 through a unit such as a pipeline or a connection line. In the exemplary embodiment, the case where the gas supply unit is installed in the chamber 110 will be exemplarily described, and a detailed description of the gas supply unit will be described again below.

[0045] The substrate support 120 may be disposed in the processing space, and the substrate S may be placed on the central region 121. Here, the central region 121 may refer to a region relatively disposed at the center of the upper region of the substrate support 120. For example, the substrate support 120 may have a cylindrical shape or a rectangular parallelepiped shape. Here, the substrate S placed on the substrate support 120 may include a wafer having a circular shape or a large-area glass substrate having a rectangular plate that can be used to manufacture a display device. That is, the substrate S may include various substrates suitable for processes for manufacturing various types of electronic devices such as semiconductor chips, solar cells, or large-area glass substrates and have various shapes such as a circle or a rectangular plate.

[0046] Accordingly, although a substrate having a circular wafer shape or a substrate having a rectangular shape is loaded on the substrate support 120, the substrate can be placed on the substrate support 120 to match the shape of the substrate. However, the exemplary embodiments are not limited thereto. For example, the substrate support 120 can have various structures and shapes. Hereinafter, as Figures 2 to 4 shown, the case where the substrate support 120 has a cylindrical shape and the substrate S has a circular wafer shape will be exemplarily described.

[0047] The pressing unit 130 can press the edge of the substrate S. Here, the substrate S loaded into the chamber 110 can include a substrate in which deformation occurs or a substrate in which no deformation occurs. For example, when a non-deformed substrate S is loaded into the processing space of the chamber 110, the pressing unit 130 can support or fix the substrate S so as not to move during the process. That is, the pressing unit 130 can be used to support or fix the substrate S by pressing the substrate S, thereby preventing the substrate S from moving due to vibration or external shock during the processing.

[0048] In addition, a deformed substrate S can be loaded into the processing space of the chamber 110. Generally, before performing a processing on the substrate S, heat can be applied to remove moisture from the substrate S. Alternatively, before performing a processing on the substrate S, heat can be applied to the substrate S in a previous process. Here, when heat is applied to the substrate S, deformation can occur in the substrate S, such as warping. Here, the warping deformation can refer to deformation into a smile-type concave shape and a crying-type convex shape. When performing a processing on the deformed substrate S using a processing gas, the substrate S can be processed unevenly. That is, the processing may not be precisely performed on the portion where the warping deformation occurs. Therefore, as the substrate S is corrected, that is, the edge of the substrate where the warping deformation occurs is pressed to be horizontally flat, the substrate S can be processed evenly.

[0049] Since the pressing unit 130 presses the edge of the substrate S (i.e., the deformed portion of the substrate S) while moving downward in the processing space, the substrate S can be unfolded to be horizontally flat. Accordingly, the substrate S can maintain a horizontally flat state while performing the processing. Here, the pressing unit 130 can have a hollow shape along the circumference of the substrate S. Since the pressing unit 130 has a hollow shape, the processing gas provided from the upper side of the pressing unit 130 can pass through the hollow portion of the pressing unit 130 and contact the substrate S. That is, since the pressing unit 130 has a hollow shape to open the upper portion of the substrate S and press the opposite edge portion, the processing gas can contact the substrate S while pressing the substrate S to perform the processing.

[0050] The pressing unit 130 may include: an edge jig 131 including a through hole 131a at its center; and an annular pushing ring 132 coupled to the edge jig 131 to press the edge of the substrate S.

[0051] The edge jig 131 may have a circular ring or rectangular annular shape. Figure 2 The case where the edge jig 131 has a circular ring shape is exemplarily shown. Hereinafter, the case where the edge jig 131 has a circular ring shape will be exemplarily described. The edge jig 131 may have a diameter larger than that of the substrate support 120. That is, when the edge jig 131 descends to be disposed at the upper side adjacent to the substrate support 120, the edge jig 131 may partially block the upper side of the space between the chamber 110 and the side surface of the substrate support 120. Accordingly, the edge jig 131 may restrict the processing gas from being introduced into the space between the chamber 110 and the side surface of the substrate support 120. In addition, the processing gas may be supplied through the through hole 131a of the edge jig 131 toward the central region 121 of the substrate support 120.

[0052] The pushing ring 132 may press the edge of the substrate S and has an annular shape. The pushing ring 132 may be detachably coupled to the bottom surface of the edge jig 131. Here, the pushing ring 132 may include various embodiments and be selectively coupled to the edge jig 131. Various embodiments of the pushing ring 132 will be described subsequently.

[0053] The substrate support 120 may include a protruding cover 123 at the edge region 122, and the pushing ring 132 may include: a frame 132a including a plate having an annular shape extending along the circumference of the substrate S; and a pressing portion 132b extending downward from the frame 132a to contact the edge of the substrate S. Here, as the pushing ring 132 descends, an interval space 132c may be formed between the bottom surface of the frame 132a and the top surface of the cover 123. That is, when the pressing unit 130 is disposed at the lowest point within the movable range (i.e., the position where the pushing ring 132 presses the substrate S), the interval space 132c may be formed between the bottom surface of the frame 132a and the top surface of the cover 123.

[0054] The cover 123 may be disposed at the edge region 122 of the substrate support 120 and protrude from the top surface of the substrate support 120. Here, the edge region 122 may refer to a region disposed more outward than the central region 121 based on the radial direction. The cover 123 may extend along the circumference of the substrate support 120 and guide the substrate S to be placed on the central region.

[0055] The frame 132a can be coupled to the bottom surface of the edge fixture 131. The frame 132a can be formed of a plate having an annular shape extending along the circumference of the substrate S. Here, the frame 132a can be lowered to be disposed adjacent to the cover 123 while being spaced apart from the cover 123, and the spaced-apart space between the bottom surface of the frame 132a and the top surface of the cover 123 is the spaced-apart space 132c. The spaced-apart space 132c can be a channel that communicates with a communication channel 132f to be described later, and the processing gas supplied to the central region 121 is discharged through the channel.

[0056] The pressing portion 132b can contact the edge of the substrate S. The pressing portion 132b can extend downward in a direction toward the inside of the frame 132a (i.e., a direction toward the center of the frame 132a). The pressing portion 132b can have a height in the vertical direction and a length in the radial direction. For example, the pressing portion 132b can extend in a diagonal direction toward the central portion of the push ring 132. Thus, as the push ring 132 is lowered, the end of the pressing portion 132b can press the substrate S.

[0057] Figure 5 (a) of is a perspective view showing a push ring according to an exemplary embodiment, Figure 5 (b) of is a perspective view showing a push ring according to another exemplary embodiment, Figure 5 (c) of is a perspective view showing a push ring according to still another exemplary embodiment, and Figure 5 (d) of is a perspective view showing a push ring according to yet another exemplary embodiment.

[0058] Figure 5 The push ring according to the exemplary embodiment in (a) of can refer to a finger-type push ring, and Figure 5 from (b) of to Figure 5 The push rings according to another exemplary embodiment, still another exemplary embodiment, and yet another exemplary embodiment in (d) of can be inclined-type push rings. Here, Figure 5 The push ring according to the exemplary embodiment in (a) of can increase the discharge efficiency of the processing gas in the substrate processing region, and Figure 5 from (b) of to Figure 5 The push rings according to another exemplary embodiment, still another exemplary embodiment, and yet another exemplary embodiment in (d) of can further effectively collect the plasma containing the processing gas, active species (or radicals), and ions to the substrate processing region.

[0059] Reference will be made to Figure 5 from (a) of to Figure 5 (d) of to describe the push ring 132 according to the exemplary embodiment in more detail.

[0060] Referring to Figure 5In (a) thereof, the pressing portions 132b of the pushing ring 132 may be provided in plurality and have a finger shape, and the length in the extending direction in the finger shape is greater than the width perpendicular to the extending direction. The plurality of pressing portions 132b may be spaced apart from each other by an equal distance along the circumference of the substrate S. For example, the pressing portion 132b may have a finger shape, a part of which linearly extends toward the central portion of the frame 132a, and the extending portion bends downward toward the central portion of the frame 132a. Here, the pressing portion 132b may bend upward when pressing the substrate S through the downward bending portion. Accordingly, a situation in which excessive pressure is applied to the surface of the substrate S can be restricted or prevented.

[0061] In addition, the pressing portions 132b may be spaced apart from each other by an equal distance along the circumference of the substrate S. Accordingly, the pressing portions 132b may be in point contact with the substrate S and press the substrate S uniformly along the circumference of the substrate S. Generally, when pressing the substrate S using a large contact area, since the processing gas may not contact the substrate S as much as the large contact area, the process efficiency may decrease relatively. That is, the etching rate may decrease. In addition, when the contact area is relatively large, the gravitational force between the substrate S and the unit contacting the substrate S may increase, and when the substrate S and the contact unit are separated, the substrate S may be damaged because the substrate S is separated by a relatively large gravitational force. Since the pressing portion 132 has a shape of a plurality of fingers and is spaced apart from each other by an equal distance, the contact area between the pressing portion 132b and the substrate S may be relatively decreased to effectively press the edge of the substrate S.

[0062] In addition, since the pressing portions 132b are spaced apart from each other by an equal distance along the circumference of the substrate, the processing gas or by-products generated during the processing process may be smoothly discharged through the spaced spaces between the pressing portions 132b to increase the discharge efficiency of the processing gas or by-products. That is, the processing gas (using which the processing process is performed on the substrate S) may be smoothly discharged through the spaced spaces between the pressing portions 132b without remaining at the upper portion of the substrate S. In addition, the by-products generated during the processing process may be smoothly discharged through the spaced spaces between the pressing portions 132b. Accordingly, the discharge efficiency during the processing of the substrate S can be increased.

[0063] In addition, the pressing portion 132b having a finger shape may be made of an elastic material. Since the pressing portion 132b is made of an elastic material, the pressing portion 132b having a finger shape may bend upward more effectively when pressing the substrate S, and damage applied to the substrate S can be restricted or prevented more effectively.

[0064] See Figure 5 of (b) to Figure 5In (d), the pressing portion 132b may extend along the edge of the substrate S and be in surface contact with the edge surface of the substrate S. For example, the pressing portion 132b may extend in the entire circumferential direction of the substrate S along the extending direction of the frame 132a, and be in line contact or surface contact with the entire circumferential line of the substrate S. Alternatively, the pressing portion 132b may partially extend in the circumferential direction of the substrate S, and be in line contact or surface contact with the edge portion of the substrate S. As shown in Figure 5 shown in (b) below, the case where the pressing portion 132b extends in the entire circumferential direction of the substrate S will be exemplarily described hereinafter. That is, the pressing portion 132b may have a height in the vertical direction, and the end of the pressing portion 132b may press the entire circumference of the edge portion of the substrate S to further firmly press the edge of the substrate S.

[0065] In addition, the pressing portion 132b may have an inclined surface 132d on at least a part of the surface facing the processing space, and the inclined surface 132d is inclined toward the top surface of the substrate support 120. That is, the inclined surface 132d may be inclined downward toward the processing space. Therefore, the processing gas can smoothly move to the processing space through the inclined surface 132d.

[0066] The processing process of the substrate processing apparatus 100 according to the exemplary embodiment may be a process of processing the substrate by the active substances and ions contained in the processing gas and the plasma P generated by the electrode unit 150 to be described later. That is, the processing process may include a process of depositing or etching the surface of the substrate according to the purpose of substrate processing. The plasma P may be generated by an inductively coupled plasma method that generates a plasma state electronically along the axis of the induction coil and a capacitively coupled plasma method that generates a plasma using a showerhead.

[0067] Here, when the processing gas and the active substances and ions of the plasma move downward, the processing gas, the active substances, and the ions may not smoothly move to the processing region (i.e., in the direction toward the center of the substrate S), where the processing process is performed on the substrate S. More precisely, a pumping unit (not shown in the figure) disposed at the lower part of the chamber 110 pumps the processing gas, the active substances, and the ions to flow downward. Here, the processing gas, the active substances, and the ions may not be processed at the top surface of the substrate S and may be directly discharged and discharged downward through the space between the edge jig 131 and the chamber 110. In addition, the processing gas, the active substances, and the ions may be directly discharged through their discharge paths, such as the spacer 132c or the communication channel 132f to be described later. This may be a factor that does not maintain the uniformity of the processing gas, the active substances, and the ions at the upper part of the substrate S. Therefore, the flow of the processing gas, the active substances, and the ions moving downward must be concentrated on the center of the substrate S.

[0068] Therefore, since the downwardly moving processing gas, active species, and ions flow along the inclined surface 132d by forming the inclined surface 132d at the pressing portion 132b, the uniformity of the processing gas and ions at the upper portion of the substrate S can be continuously maintained. That is, since the processing gas, active species, and ions are induced to flow along the inclined surface 132d toward the center of the substrate S, the processing gas, active species, and ions can be concentrated on the substrate S and uniformly distributed in the central portion of the processing region of the substrate S.

[0069] See Figure 5 of (c), the inclined surface 132d may have an angle that is gentler on the inner side than the outer side with respect to the top surface of the substrate support 120. That is, the inclined surface 132d may have an inclination that gradually or continuously becomes gentle in the direction toward the central portion of the pusher ring 132.

[0070] When the protruding portion at the central portion of the guiding pusher ring 132 is provided on the inclined surface 132d, the downwardly flowing processing gas or active species and ions may collide with the protruding portion, and the flow concentrated on the processing region of the substrate S may be dispersed. Therefore, the processing gas or active species and ions can contact the inclined surface 132d by forming an inclination in a gradually gentle manner in the direction toward the central portion of the pusher ring 132, thereby smoothly inducing the flow toward the central portion of the pusher ring 132. That is, although the downwardly moving processing gas or active species and ions collide with the inner surface of the pressing portion 132b, the processing gas or active species and ions smoothly flow along the inclined surface 132d formed in a gradually gentle manner toward the central portion of the substrate S. Therefore, the uniformity of the processing gas and ions at the upper portion of the substrate S can be further effectively maintained. For example, the inclined surface 132d may have an inclination that gradually becomes gentle in the direction toward the central portion of the pusher ring 132 or may be a curved surface.

[0071] See Figure 5 of (d), as described above, the substrate S having a rectangular shape can be loaded into the processing space of the chamber 110. Therefore, the pusher ring 132 can have a rectangular annular shape. The rectangular pusher ring 132 may include the frame 132a and the pressing portion 132b, as described above. In addition, the rectangular pusher ring 132 may further include a pair of pressing rods 132e that connect the centers of the vertical side and the horizontal side. Generally, the rectangular substrate S may have a size larger than that of a circular substrate. Therefore, it may not be possible to sufficiently press the substrate S by pushing the edge of the substrate S using the pressing portion 132b. Therefore, the rectangular substrate S can be firmly pressed by pushing the centers of the horizontal side and the vertical side of the substrate S using a pair of pressing rods 132e.

[0072] In addition, the push ring 132 may include a communication channel 132f through which the processing space communicates with the spacer space 132c. The communication channel 132f may discharge the processing gas at the upper portion of the substrate S to the spacer space. When the communication channel 132f is not formed, the processing gas (which has undergone a processing process) at the upper portion of the substrate S may rise along the inner surfaces of the cover 123 and the edge clamp 131 and be discharged through the space between the chamber 110 and the inner surface of the edge clamp 131. Therefore, the discharge flow of the processing gas may not be formed smoothly, and the efficiency of the processing process of the substrate S may decrease. Here, when the communication channel 132f is formed and the processing gas is discharged to the spacer space 132c through the communication channel 132f, the processing gas at the upper portion of the substrate S may be discharged smoothly.

[0073] A plurality of communication channels 132f may be provided, and the plurality of communication channels 132f may be spaced apart from each other at equal distances along the circumference of the substrate S in the push ring 132. Therefore, the processing gas may be discharged smoothly through the plurality of communication channels 132f. In Figure 5 the push ring 132 according to an exemplary embodiment in (a) of [], the spacer space between the plurality of pressing portions 132b having a finger shape may be the communication channel 132f.

[0074] In addition, in Figure 5 (b) of [] and Figure 5 in the push ring 132 according to another exemplary embodiment and still another exemplary embodiment in (c) of [], the through hole from the inside to the outside of the pressing portion 132b may be the communication channel 132f. Here, four communication channels 132f may be spaced apart from each other at equal distances in the circumferential direction.

[0075] In addition, in Figure 5 the push ring 132 according to still another exemplary embodiment in (d) of [], the through hole from the center of the vertical side and the horizontal side of the rectangular ring from the inside to the outside may be the communication channel 132f. Here, the communication channel 132f may be formed at each of the horizontal side and the vertical side.

[0076] The communication channel 132f may have an inner diameter that gradually decreases in the direction toward the spacer space 132c. Generally, as the cross-sectional area decreases, the fluid may move faster. More precisely, the fluid may move from a high-pressure region to a low-pressure region, and the velocity of the fluid may decrease in a region having a relatively wide cross-sectional area and increase in a region having a relatively narrow cross-sectional area. It is known from Bernoulli's law, which explains the relationship between pressure and velocity, that the velocity of the fluid may decrease as the inner diameter of the channel increases, and as the inner diameter of the channel decreases, the velocity of the fluid may increase and the internal pressure may decrease.

[0077] Therefore, since the inner diameter of the communication channel 132f decreases in the direction toward the gap space 132c, the processing gas passing through the communication channel 132f can move quickly and smoothly to the gap space 132c.

[0078] In addition, the cross-sectional area of the gap space 132c can gradually decrease in the discharge direction of the processing gas, so that the processing gas can move smoothly and quickly through the gap space 132c connected to the communication channel 132f. For this purpose, the thickness of one of the frame 132a and the cover 123 can gradually increase in the discharge direction of the processing gas. Therefore, the distance between the bottom surface of the frame 132a and the top surface of the cover 123 can gradually decrease in the discharge direction of the processing gas, and the cross-sectional area therebetween can decrease to smoothly discharge the processing gas.

[0079] In addition, the inner surface of the edge clamp 131 can be inclined downward and inward in the direction toward the center of the edge clamp 131. Since the inner surface of the edge clamp 131 is inclined downward, the downward-moving processing gas flow can be induced into the inside of the push ring 132. That is, since the processing gas moves along the inner surface toward the center of the push ring 132 as the inner surface of the edge clamp 131 is inclined downward, the processing gas can be collected in the push ring 132 more smoothly than when the inner surface is formed vertically.

[0080] The substrate support 120 can further include a plurality of through holes 124 vertically passing therethrough and a plurality of lift pins 125 disposed in the plurality of through holes 124. In addition, the driving unit 140 can support the plurality of lift pins 125 and allow the plurality of lift pins 125 to move at least partially together in the vertical direction while moving the pressing unit 130.

[0081] The through holes 124 can vertically pass through the substrate support 120, and the lift pins 125 can be disposed in the through holes 124. The lift pins 125 can vertically move in the through holes 124 and have upper ends placed on the substrate support 120. That is, the upper part of the inner surface of a part of the substrate support 120 (which forms the through holes 124) can have the same shape as the upper ends of the lift pins 125, so as to place the upper ends of the lift pins 125. For example, the upper part of the through holes 124 can have a tapered shape inclined inward, and the upper ends of the lift pins 125 can also have a tapered shape inclined inward.

[0082] Therefore, the plurality of lift pins 125 can vertically move through the driving unit 140 and move the substrate S placed on the plurality of lift pins 125 to the top surface of the substrate support 120.

[0083] In addition, the driving unit 140 may allow a plurality of lifting pins 125 to move at least partially together in the vertical direction while moving the pressing unit 130. That is, the driving unit 140 may move the lifting pins 125 and the pressing unit 130 in the vertical direction before the lifting pins 125 are placed on the substrate support 120, and only move the pressing unit 130 downward after the lifting pins 125 are placed on the substrate support 120. Therefore, when the lifting pins 125 and the pressing unit 130 are moved upward by the driving unit 140, a distance may be generated between the lifting pins 125 and the pressing unit 130, and the substrate S may be smoothly loaded onto the plurality of lifting pins 125 through the distance therebetween.

[0084] The driving unit 140 may include a support plate 141 disposed below the substrate support 120 to support the lifting pins 125, a connection portion 142 connecting the pressing unit 130 and the support plate 141, and a driving member 143 providing a driving force for moving the support plate 141 in the vertical direction. Here, the connection portion 142 may have a height greater than the height of each of the lifting pins 125.

[0085] When the connection portion 142 has a height less than the height of the lifting pins 125, a space between the lifting pins 125 and the pressing portion may not be formed, and the substrate S may not be smoothly loaded onto the plurality of lifting pins 125. Therefore, when the height of the connection portion 142 is greater than the height of each of the lifting pins 125, a distance between the pressing unit 130 and the lifting pins 125 can be ensured.

[0086] In addition, the driving unit 140 may adjust the pressing force for pressing the substrate S. That is, the force of the pressing unit 130 for pressing the substrate S can be adjusted by controlling the power of the driving member 143. For example, when the undeformed substrate S is loaded into the chamber 110, the driving unit 140 may press and fix the substrate S while adjusting the pressing force. Therefore, a relatively small physical impact can be applied to the surface of the substrate S, and damage to the substrate S can be restricted or prevented.

[0087] In addition, when the deformed substrate S is loaded into the chamber 110, the driving unit 140 can press the substrate S while adjusting the pressing force. That is, the pressing unit 130 can press the substrate S in a state where the pressing unit 130 contacts the substrate but does not closely contact the substrate support 120. For example, when a warpage deformation with a vertical height of 5 mm occurs in the substrate S, the driving unit 140 can operate the pressing unit 130 to press the substrate S to unbend the substrate S by 3 mm. Therefore, the substrate S can have a gap of 2 mm from the top surface of the substrate support 120, and a relatively smaller physical impact can be applied to the surface of the substrate S than when it is pressed to be straightened by 5 mm. Here, although the substrate S does not closely contact the top surface of the substrate support 120 through the pressing unit 130, since the gap of 2 mm or less than 2 mm described above is less than the overall distance between the plasma and the substrate S, the plasma may not be generated on the bottom surface of the deformed substrate S. Therefore, when pressing the substrate S so that the substrate S does not closely contact the substrate support 120, parasitic plasma generation on the substrate S can be restricted or prevented without applying impact or damage to the surface of the substrate S.

[0088] The chamber 110 may further include: an electrode unit 150 disposed in the chamber 110 to generate plasma P in the processing space; and a power unit 160 that applies power to the electrode unit 150 to generate plasma P at an upper portion of the substrate support 120. That is, the electrode unit 150 can receive power from the power unit 160 to form plasma P in the processing space. Here, when the electrode unit 150 is disposed in the processing space, the gas supply unit described above may include a shower head that uses the plasma P for the processing process.

[0089] The process of pressing and processing the substrate S using the substrate processing apparatus 100 will be described in conjunction with the description of the substrate processing method.

[0090] Hereinafter, a substrate processing method according to an exemplary embodiment will be described. When describing the substrate processing method according to the exemplary embodiment, the case of using the substrate processing apparatus 100 according to the exemplary embodiment will be exemplarily described. Therefore, an overlapping description of the components of the substrate processing apparatus will be omitted.

[0091] The substrate processing method according to the exemplary embodiment may include: process S110 of placing the substrate S on the central region 121 of the substrate support 120 disposed in the processing space; process S120 of pressing the edge of the substrate S by lowering an annular pressing unit 130 disposed along the circumference of the substrate S placed on the substrate support 120; and process S130 of performing a processing process on the substrate S by injecting a processing gas to the pressed substrate S.

[0092] Figure 6 is a view showing a state in which a substrate is loaded into a chamber according to an exemplary embodiment, Figure 7 is a view showing a state in which a substrate is placed on a substrate support according to an exemplary embodiment, Figure 8 is a view showing a state in which a substrate is pressed according to an exemplary embodiment, and Figure 9 is a flowchart showing a substrate processing method according to an exemplary embodiment.

[0093] Reference will be made to Figure 6 and Figure 9 to describe a substrate processing method according to an exemplary embodiment. Hereinafter, when describing the substrate processing method, a case where a push ring 132 according to an exemplary embodiment is applied to a pressing unit 130 will be described exemplarily. In addition, a case where a substrate S having a warpage deformation is loaded into a substrate processing apparatus will be described exemplarily.

[0094] Referring to Figure 6 , first, the support plate 141 may be in an ascending state, and the lift pins 125 and the pressing unit 130 may also be in an ascending state. The substrate S may be loaded from the outside onto the lift pins 125 by a loading unit such as a transfer robot (not shown in the figure). Here, as the distance between the push ring 132 and the lift pins 125 is formed, the substrate S may be smoothly loaded onto the lift pins 125.

[0095] Referring to Figure 7 , the substrate S may be placed on the top surface of the substrate support 120. That is, the support plate 141 may be lowered by operating the driving unit 140. Accordingly, the lift pins 125 and the pressing unit 130 may be lowered together. When the lift pins 125 are lowered, the upper end of the lift pins 125 may be placed on the upper portion of the through hole 124 of the substrate support 120, and the substrate S may be placed on the top surface of the substrate support 120 while placing the lift pins 125.

[0096] Referring to Figure 8 , the support plate 141 may be further lowered in a state where the substrate S is placed on the top surface of the substrate support 120. Accordingly, the lower ends of the support plate 141 and the lift pins 125 may be separated from each other. In addition, as the support plate 141 is further lowered, the pressing unit 130 may also be further lowered, and the push ring 132 of the pressing unit 130 may contact the substrate S. That is, a pressing portion 132b, which is a downwardly inclined portion of the push ring 132, may press the edge of the substrate S. Accordingly, the deformed edge of the substrate S may be pressed by the pressing portion 132b and straightened horizontally.

[0097] As the support plate 141 further descends with the substrate S placed on the top surface of the substrate support 120, the frame 132a of the pressing unit 130 can be spaced apart from the cover 123 provided to the support plate 141 and arranged adjacent to the cover 123. That is, an interval space 132c can be formed between the bottom surface of the frame 132a and the top surface of the cover 123 as the frame 132a descends. That is, the interval space 132c can be formed between the bottom surface of the frame 132a and the top surface of the cover 123 when the pressing unit 130 is at the lowest point in the lower movable range (i.e., the position where the push ring 132 presses the substrate S).

[0098] A processing process can be performed on the substrate S in a pressed state. More specifically, the plasma P is formed in the processing space through the electrode unit 150 and the power unit 160, and the gas supply unit can supply the processing gas to the processing space. The processing gas can move downward to pass through the plasma P and move to the upper region of the substrate S. Here, the processing gas can be induced inside the push ring 132 by the inwardly inclined inner surface of the edge clamp 131. Thereafter, the processing gas can reach the upper region of the substrate S, and a processing process can be performed on the surface of the substrate S.

[0099] The processing gas (which has performed the processing process on the substrate S) can be discharged through the interval space between the pressing portions 132b having a finger shape (i.e., the interval space 132c that is connected to and passes through the communication channel 132f). Therefore, the processing gas can be smoothly discharged without remaining in the upper region of the substrate S, and the processing process can be smoothly performed on the substrate S.

[0100] When the push ring 132 according to another exemplary embodiment, yet another exemplary embodiment, and still another exemplary embodiment is applied to the pressing unit 130, the processing gas flow can be smoothly formed toward the central portion of the substrate S. That is, the active substances and ions contained in the descending processing gas or plasma P can contact the inclined surface 132d of the pressing portion 132b and flow along the inclined surface 132d toward the center of the substrate S. Therefore, the processing gas or the active substances and ions can be concentrated on the central portion of the substrate S instead of directly escaping through the gap between the chamber 110 and the edge clamp 131 or the communication channel 132f, and the processing gas or the active substances and ions can be uniformly distributed on the substrate S. That is, the uniformity of the active substances and ions contained in the processing gas and the plasma P can be continuously maintained in the upper region of the substrate S.

[0101] As described above, since the processing is performed while the substrate S placed on the substrate support 120 is pressed, even if vibrations or external impacts are applied to the substrate during the processing, the position of the substrate may not change. Therefore, the processing can be performed while the position of the substrate is fixed. In addition, when a deformation such as warping occurs in the substrate, since the deformed portion is pressed and straightened horizontally, the substrate can be uniformly processed during the processing. In addition, since the deformed portion is pressed and corrected, generation of parasitic plasma on the bottom surface of the substrate can be restricted or prevented. In addition, since the flow of the processing gas and the plasma containing active substances and ions is formed to be directed toward the center of the substrate and is uniformly distributed on the substrate, the uniformity of the substrate processing can be maintained. In addition, the efficiency of the substrate processing can be improved by smoothly forming the discharge flow of the processing gas and the plasma containing active substances and ions during the processing.

[0102] According to an exemplary embodiment, since the edge of the substrate is pressed, even if vibrations or external impacts are applied to the substrate during the processing, the position of the substrate may not change. Therefore, the processing can be performed while the position of the substrate is fixed.

[0103] In addition, when a deformation such as warping occurs in the substrate, since the deformed portion is pressed and corrected, that is, straightened horizontally, the substrate can be uniformly processed during the processing.

[0104] In addition, since the deformed portion is pressed and corrected, generation of parasitic plasma on the bottom surface of the substrate can be restricted or prevented.

[0105] In addition, since the flow of the processing gas and the plasma containing active substances and ions is formed to be directed toward the center of the substrate and is uniformly distributed on the substrate, the uniformity of the substrate processing can be maintained.

[0106] In addition, the efficiency of the substrate processing can be improved by smoothly forming the discharge flow of the processing gas and the plasma containing active substances and ions during the processing.

[0107] Although the preferred embodiments of the present invention have been described in the detailed description of the embodiments, various changes and modifications can be made thereto without departing from the scope and spirit of the present invention defined by the appended claims. Therefore, the scope of the present invention is not defined by the detailed description of the present invention, but by the appended claims, and all differences within the scope will be construed as being included in the present invention.

Claims

1. A substrate processing apparatus, comprising: A chamber having a processing space; A gas supply unit configured to supply a processing gas into the processing space; A substrate support disposed in the processing space to support a substrate at a central region; A hollow pressing unit disposed along a circumference of the substrate to press an edge of the substrate when descending in the processing space; And A driving unit configured to provide a driving force for vertical movement of the pressing unit, Wherein the pressing unit includes: An edge clamp including a through hole at its center; and An annular pushing ring coupled to the edge clamp and configured to press the edge of the substrate, Wherein the pushing ring includes: A frame formed by an annular plate extending along the circumference of the substrate; and A pressing portion extending inward and downward from the frame to contact the edge of the substrate, Wherein the pressing portion extends along the edge of the substrate and is in line contact or surface contact with the edge of the substrate, and the pressing portion includes an inclined surface on at least a part of a surface facing the processing space, the inclined surface being inclined toward a top surface of the substrate support, and Wherein the inclined surface has an inclination with respect to the top surface of the substrate support, and the inclination is gentler at an inner side of a central portion of the inclined surface closer to the center of the pushing ring than at an outer side.

2. The substrate processing apparatus according to claim 1, wherein the substrate support includes a protruding cover at an edge region, and As the pushing ring descends, the frame forms a spaced space between a bottom surface of the frame and a top surface of the cover.

3. The substrate processing apparatus according to claim 2, wherein the pushing ring includes a communication channel passing through to communicate the spaced space with the processing space.

4. The substrate processing apparatus according to claim 3, wherein a plurality of the communication channels are provided, and the communication channels are spaced apart from each other at equal distances along the circumference of the substrate.

5. The substrate processing apparatus according to claim 1, wherein the edge clamp has an inner surface inclined downward and inward toward a center of the edge clamp.

6. The substrate processing apparatus according to claim 1, wherein the substrate support further includes a plurality of through holes vertically passing through and a plurality of lifting pins disposed in the plurality of through holes, and The driving unit supports the plurality of lifting pins and allows the plurality of lifting pins to move at least partially together in a vertical direction while moving the pressing unit.

7. The substrate processing apparatus according to claim 6, wherein the driving unit includes: A support plate disposed below the substrate support to support the plurality of lifting pins; A connection portion configured to connect the pressing unit and the support plate; And A driving member configured to provide a driving force for vertical movement of the support plate, Wherein the connection portion has a height greater than a height of each of the plurality of lifting pins.

8. The substrate processing apparatus according to claim 1, further comprising: An electrode unit disposed in the chamber to generate plasma in the processing space; And A power unit configured to apply power to the electrode unit to generate the plasma at an upper portion of the substrate support.

9. A substrate processing method, comprising: Placing a substrate at a central region of a substrate support disposed in a processing space; Pressing an edge of the substrate by allowing a ring-shaped pressing unit disposed along a circumference of the substrate placed on the substrate support to descend; And Performing a processing process on the substrate by injecting a processing gas to the pressed substrate, Wherein the pressing unit includes: An edge fixture including a through hole at its center; and A ring-shaped pushing ring coupled to the edge fixture and configured to press the edge of the substrate, Wherein the pushing ring includes: A frame formed of a ring-shaped plate extending along the circumference of the substrate; and A pressing portion extending inward and downward from the frame to contact the edge of the substrate, Wherein the pressing portion extends along the edge of the substrate and is in line contact or surface contact with the edge of the substrate, and the pressing portion includes an inclined surface on at least a part of its surface facing the processing space, the inclined surface being inclined toward a top surface of the substrate support, and Wherein the inclined surface has an inclination with respect to the top surface of the substrate support, the inclination being gentler at an inner side of the inclined surface near a central portion of the pushing ring than at an outer side.

10. The substrate processing method according to claim 9, wherein placing the substrate includes: Transferring the substrate to a lift pin disposed at the central region; And Allowing the lift pin and the pressing unit to descend simultaneously.

11. The substrate processing method according to claim 10, wherein performing the processing process on the substrate includes discharging the processing gas between a bottom surface of the pressing unit and a top surface of an edge of the substrate support in a state where the pressing unit presses the substrate.

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