Plasma processing device

Abstract

This invention provides a plasma processing apparatus. This plasma processing apparatus enables improved controllability of gas distribution on a substrate. The plasma processing apparatus includes a chamber, an antenna assembly, a primary coil, an RF power supply, and a gas nozzle. The chamber includes a top plate with a central opening, defining a plasma processing space. The antenna assembly is disposed above the top plate, and the antenna assembly has a central region, a first surrounding region surrounding the central region, and a second surrounding region surrounding the first surrounding region, the central region and the first surrounding region overlapping the central opening longitudinally. The primary coil is disposed in the second surrounding region. The RF power supply is configured to supply an RF signal to the primary coil. The gas nozzle is disposed in the central opening and has a bottom exposed within the plasma processing space, the bottom having a plurality of bottom gas inlet holes.

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