Photoelectric devices

Abstract

A photoelectric device includes a target substrate, a circuit layer disposed on the target substrate, a plurality of micro-photoelectric elements electrically connected to the circuit layer, and a supplemental component electrically connected to the circuit layer. The target substrate is pre-determined with a plurality of bonding locations and a repair location corresponding to one of the bonding locations and offset from the target substrate by a distance greater than or equal to zero. The micro-photoelectric elements are disposed on at least a portion of the bonding locations on the target substrate. The supplemental component includes electrodes disposed at the repair locations on the target substrate and fused to the circuit layer. The supplemental component is positioned arbitrarily relative to the micro-photoelectric elements on the target substrate.

Description

Technical Field

[0001] The present invention relates to a photoelectric device, a photoelectric device of a micro-photoelectric element and a repair method thereof. Background Art

[0002] Traditional LEDs (with side lengths greater than 150 microns) are manufactured through processes such as epitaxy, lithography, metallization, and etching. After full-cutting, the LED die are obtained. Wire bonding or eutectic bonding is then used to electrically connect the LED electrodes to the circuit board. Traditional LEDs can be sorted by various pre- and post-package sorting methods based on characteristics such as wavelength, luminous intensity, beam angle, or operating voltage. However, micro-LEDs, due to their extremely small size (e.g., 25 microns or smaller), are not suitable for traditional LED sorting equipment. Consequently, solutions such as direct application to the circuit board without sorting or the use of electrical testing methods other than traditional methods have emerged.

[0003] Regardless, the goal of micro-LEDs is to ensure they function effectively and efficiently after being mounted on a circuit substrate. Even if the micro-LEDs undergo a sorting process before being mounted on the circuit substrate, there's still a chance that defective micro-LEDs (hereinafter referred to as "defectives") or / and poor electrical connections may exist after the circuit substrate is installed. Considering the sheer number of micro-LEDs on the circuit substrate, their fine pitches and dimensions, and the highly variable heights due to process or material errors, the dilemma arises as to how to repair these defects without damaging the surrounding circuitry or other good micro-LEDs (hereinafter referred to as "goods"). Summary of the Invention

[0004] The present invention provides a photoelectric device and a repair method thereof, which can be widely used in repairing various photoelectric devices mainly based on micro-photoelectric elements.

[0005] The present invention provides an optoelectronic device comprising: a target substrate, a circuit layer, a plurality of micro-photoelectric components, and a supplemental component. The target substrate is pre-determined with a plurality of bonding locations and a repair location corresponding to one of these bonding locations and offset relative to a predetermined value, the offset being greater than or equal to zero. The circuit layer is disposed on the target substrate; the micro-photoelectric components are disposed on the target substrate and electrically connected to the circuit layer; the micro-photoelectric components are respectively disposed at at least a portion of the bonding locations on the target substrate. The supplemental component is disposed at the repair location on the target substrate; the supplemental component has electrodes electrically connected to the circuit layer; and the supplemental component is positioned arbitrarily relative to the micro-photoelectric components on the target substrate.

[0006] In some embodiments, the electrodes of the auxiliary component are laser spot welded to the circuit layer.

[0007] In some embodiments, the reflectivity at the welded portion between the circuit layer and the auxiliary component is defined to be less than 20%.

[0008] In some embodiments, the offset is equal to zero and the complementary member is disposed in one of the engagement positions.

[0009] In some embodiments, one of the micro-photoelectric elements is removed and replaced by a complementary component.

[0010] In some embodiments, the auxiliary component and the micro optoelectronic elements together form a matrix array.

[0011] In some embodiments, the circuit connection between one of the micro-optoelectronic elements and the circuit layer is replaced by the circuit connection between the complementary component and the circuit layer.

[0012] In some embodiments, the micro-photoelectric elements are in a matrix array, and the auxiliary component is placed next to one of the micro-photoelectric elements.

[0013] In some embodiments, the optoelectronic device further defines a cutout, which interrupts the electrical connection between the corresponding micro optoelectronic element and the circuit layer.

[0014] In some embodiments, each of the micro-photoelectric element and the auxiliary component is a flip-chip micro-LED.

[0015] In some embodiments, the target substrate defines a plurality of bonding position groups consisting of these bonding positions, the repair position corresponds to and is adjacent to each bonding position group, and has an offset relative to each bonding position; these micro-photoelectric elements constitute a plurality of micro-photoelectric element groups, respectively corresponding to these bonding position groups; the auxiliary part is arranged at a repair position adjacent to one of these micro-photoelectric element groups; the auxiliary part and the plurality of photoelectric elements in the corresponding micro-photoelectric element groups each have two electrodes, and the auxiliary part is electrically connected to one of the electrodes of the plurality of photoelectric elements in the corresponding micro-photoelectric element groups; the circuit connection between the other electrode of one of the micro-photoelectric elements in one of the corresponding micro-photoelectric element groups and the circuit layer is replaced by the circuit connection between the other electrode of the auxiliary part and the circuit layer.

[0016] In some embodiments, the optoelectronic device further defines a cutout, which interrupts the electrical connection between one of the micro-optoelectronic elements in the corresponding micro-optoelectronic element groups and the circuit layer.

[0017] In some embodiments, the circuit layer further includes a repair line corresponding to the repair position, a plurality of circuit extension segments corresponding to a plurality of bonding positions in these bonding position groups, and a port formed by the plurality of circuit extension segments and the repair line; a circuit extension segment corresponding to one of the bonding positions in these bonding position groups, and a port formed by the circuit extension segment and the repair line; the port is electrically connected to the repair line.

[0018] In some embodiments, the port is laser welded to the repair line.

[0019] In some embodiments, the laser welded port is defined to have a reflectivity of less than 20%.

[0020] The present invention provides a method for repairing a photovoltaic device, for transferring a supplemental component to a photovoltaic device having a plurality of micro-photoelectric elements. The supplemental component includes an electrode, and the photovoltaic device includes a target substrate, a circuit layer disposed on the target substrate, and a plurality of micro-photoelectric elements disposed on the circuit substrate and electrically connected to the circuit layer. The method includes the following steps:

[0021] selecting one of the micro-photoelectric elements; wherein the target substrate is defined with a plurality of bonding locations and a repair location corresponding to one of the bonding locations and offset relative to the target substrate by an amount greater than or equal to zero; and the micro-photoelectric elements are respectively disposed at at least a portion of the bonding locations on the target substrate;

[0022] The transfer device first picks up the auxiliary component and transfers it to the repair position on the target substrate;

[0023] The transfer device is kept in contact with the micro-photoelectric elements and focused light is irradiated on the repair position to weld the electrodes of the auxiliary component to the circuit layer of the target substrate for electrical connection; wherein, on the target substrate, the auxiliary component is randomly positioned relative to the micro-photoelectric elements; and

[0024] Remove the transpose device.

[0025] In some embodiments, before or after the step of transferring the complementary member, the method further includes removing selected micro optoelectronic devices on the target substrate.

[0026] Before or after the spotlight irradiation step, some embodiments further include: forming a cut in the circuit layer near the bonding position to interrupt the circuit connection between one of the micro-photoelectric elements corresponding to one of the bonding positions and the circuit layer.

[0027] In some embodiments, a laser forms the cut.

[0028] In some embodiments, after the spotlight irradiation step, a reflectivity of less than 20% is defined at the welded portion between the circuit layer and the auxiliary component.

[0029] In some embodiments, during the step of transferring the auxiliary component, the transfer device includes a transfer substrate and a buffer material disposed on the substrate; the buffer material defines a contact pressure plane.

[0030] In some embodiments, the buffer material is defined to have a thickness of at least 4 μm.

[0031] In some embodiments, the step of selecting one of the micro-photoelectric elements further includes selecting some of the micro-photoelectric elements; and after the step of transferring the auxiliary components, the step of transferring the auxiliary components further includes transferring the plurality of auxiliary components corresponding to the partial micro-photoelectric elements by a transposing device.

[0032] In some embodiments, before or after the step of transferring the auxiliary component, the method further includes: the circuit layer further has a repair line corresponding to the repair position, a circuit extension corresponding to one of the micro-photoelectric elements, and a port connecting the repair line and the circuit extension.

[0033] In some embodiments, before or after the focused irradiation step, the method further includes: laser melting a port to electrically connect the circuit extension section to the repair line.

[0034] In some embodiments, the laser-fused port definition has a reflectivity of less than 20%. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1A is a schematic diagram of a first embodiment of a photovoltaic device according to the present invention;

[0036] Figure 1B is a schematic diagram of a second embodiment of a photovoltaic device according to the present invention;

[0037] Figure 2A for Figure 1A A side view schematic diagram of

[0038] Figure 2B for Figure 1B A side view schematic diagram of

[0039] Figure 3 is a schematic diagram of a first embodiment;

[0040] Figure 3A for Figure 3 A partial enlarged view of

[0041] Figure 4A and Figure 4B are different schematic diagrams of the transposition device;

[0042] Figure 5 is a schematic diagram of a fifth embodiment of a photovoltaic device according to the present invention;

[0043] Figure 6A 、6B are different schematic diagrams of a sixth embodiment of the optoelectronic device of the present invention;

[0044] Figure 7A 、 7B are different schematic diagrams of a seventh embodiment of the photovoltaic device of the present invention;

[0045] Figure 8 This is a flow chart of the first embodiment;

[0046] Figures 9A to 9E This is a schematic diagram of manufacturing the first embodiment;

[0047] Figure 10 is another schematic diagram of the first embodiment;

[0048] Figures 11A to 11E , respectively, are flowcharts of the twelfth embodiment to the sixteenth embodiment; and

[0049] Figure 12 4 is a flow chart of the seventeenth embodiment. DETAILED DESCRIPTION

[0050] The "optoelectronic devices" used herein include, but are not limited to, display panels, advertising billboards, sensing devices, display devices, semiconductor devices, or lighting devices, and may be monochrome or full-color. Among them, the display device may be applied to, for example, a virtual reality (VR) head-mounted display or an augmented reality (AR) head-mounted display, or a head-up display (HUD). The "micro" optoelectronic elements used herein generally refer to micro-scale optoelectronic elements, including but not limited to light-emitting diodes, photodiodes, integrated circuits, and semiconductor devices of sensors, and components using the aforementioned devices. The "target substrate" used herein refers to a non-native substrate for receiving micro optoelectronic elements. The materials of the native substrate or non-native substrate include, but are not limited to, polymers, plastics, resins, polyimide, polyethylene naphthalate, polyethylene terephthalate, metal, metal foil, glass, quartz, glass fiber, flexible glass, semiconductors, sapphire, gallium arsenide, silicon carbide, metal-glass fiber composite panels, metal-ceramic composite panels, etc. The "matrix array" used in this article refers to an array that can be arranged into a straight row, a horizontal column, or a row-column matrix as required, or arranged into a polygonal or irregular shape according to a rule, without limitation. The following will refer to the relevant drawings to illustrate the optoelectronic device and the repair method according to the preferred embodiment of the present invention, in which the same elements will be illustrated with the same figure marks. The drawings of all embodiments of the present invention are only schematic and do not represent the actual size, proportion or quantity. In addition, the orientations "up" and "down" referred to in the content of the following embodiments are only used to indicate relative positional relationships. Furthermore, an element formed "on", "above", "down" or "below" another element may include one element in the embodiment being in direct contact with another element, or may also include other additional elements between one element and another element so that one element is not in direct contact with another element.

[0051] [First embodiment]

[0052] Please refer to Figure 1A 、 Figure 2AThis is a schematic diagram of a first embodiment of a photovoltaic device according to the present invention. The photovoltaic device 100 includes a target substrate 10, a circuit layer 20, a plurality of micro-photoelectric elements, and a supplemental component 40. The target substrate 10 has two opposing surfaces S1 and S2. The target substrate 10 is pre-defined with a plurality of bonding positions Pc and a repair position Pr corresponding to one of these bonding positions Pc and offset by an offset D. In the present invention, the offset D can be greater than or equal to zero; this embodiment illustrates an offset D greater than zero. The circuit layer 20 has at least a plurality of first circuit lines L1 and a plurality of second circuit lines L2, depending on whether the matrix is ​​active or passive. The micro-photoelectric elements are disposed on one surface S1 of the target substrate 10 and are electrically connected to the circuit layer 20. Each micro-photoelectric element has at least two electrodes corresponding to and electrically connected to the first circuit line L1 and the second circuit line L2. The micro-photoelectric elements are disposed at at least a portion of the bonding positions Pc on the target substrate 10. In this embodiment, a defective micro-photoelectric element 30' (i.e., a defective product) is selected from these micro-photoelectric elements. A single micro-photoelectric element 30' is used as an example, and the bonding position corresponding to the defective micro-LED 30' is labeled Pc' (herein referred to as the defective bonding position). A supplementary component 40 is a micro-photoelectric element having at least one electrode. For easier understanding, supplementary component 40 can be selected to be a micro-photoelectric element of the same nature as micro-photoelectric element 30'. These micro-photoelectric elements (including the defective micro-photoelectric element 30') and supplementary component 40 can be, for example, but not limited to, flip-chip micro-LEDs. Supplementary component 40 is positioned at repair position Pr on target substrate 10, and the electrodes of supplementary component 40 are laser spot welded to circuit layer 20 to achieve electrical connection.

[0053] For ease of understanding, "defective products" are those that fail to meet predetermined functions based on characteristics such as wavelength, luminous intensity, luminous angle, or operating voltage, as determined by specific standards or conditions. For example, the micro-photoelectric element labeled 30' is classified as a defective product. "Qualified products" are defined relative to defective products, such as the micro-photoelectric elements 30 other than the micro-photoelectric element 30'. Among them, the bonding positions labeled Pc' are "defective bonding positions"; for example, before the target substrate 10 is mounted with these micro-photoelectric elements 10, some of the micro-photoelectric elements (not shown) are judged to be defective due to other reasons or are discarded after a sorting step. The preset bonding positions Pc on the target substrate 10 cannot be filled one-to-one with micro-photoelectric elements and are left vacant. Therefore, it is defined that these micro-photoelectric elements 30 are respectively arranged at at least a portion of the bonding positions Pc on the target substrate 10, and the bonding positions that are not filled with any micro-photoelectric elements 30, 30' are also labeled Pc'; or, if the micro-photoelectric elements 30 are filled one-to-one with all the bonding positions Pc without or after a sorting step, and if it is later found that there are micro-photoelectric elements 30' that have poor function or poor contact, the bonding positions are labeled Pc'.

[0054] It is worth noting that the plurality of bonding positions Pc pre-set on the target substrate 10 are arranged in a regular pattern, preferably a matrix arrangement. The phrase "at least a portion" of the bonding positions Pc at which the micro-photoelectric elements 30, 30' are disposed can refer to a portion of the bonding positions Pc where the micro-photoelectric elements 30, 30' are disposed, or alternatively, to a portion where no micro-photoelectric elements 30, 30' were present due to the sorting step. Furthermore, the number of repair positions Pr can be one, at least one, or multiple, and the number of repair positions Pr must at least correspond to the number of defective bonding positions Pc'. This will be described in more detail below.

[0055] It is noteworthy that, on the target substrate 10, because the type of auxiliary element 40 is selected based on the micro-electro-optical elements required for defective micro-electro-optical elements 30' or for bonding positions Pc' where no micro-electro-optical elements 30, 30' are present, the auxiliary elements 40 are randomly generated relative to the regularly arranged micro-electro-optical elements 30, 30' pre-placed on the target substrate 10, and are referred to herein as "arbitrary." For ease of understanding, the term "arbitrary" herein refers to anything other than a regular arrangement (e.g., a matrix array) and encompasses objective aspects such as non-regular arrangement (e.g., a matrix array), accidental occurrence, or random distribution, as well as subjective selection. Furthermore, the number of auxiliary elements 40 is not limited to one, nor is the number of auxiliary elements 40 limited to the same as the number of repair positions Pr. Whether the number of auxiliary elements 40 is one, at least one, or a plurality (or more), the existence of the auxiliary elements 40 relative to the regularly arranged micro-electro-optical elements 30, 30' is not affected by the interpretation that they are arbitrary.

[0056] For ease of understanding, the circuit layer 20 of this embodiment illustrates a crisscross pattern of first and second circuit lines L1 and L2, as well as at least one circuit extension (unnumbered) extending from each of the first and second circuit lines L1 and L2. However, please note that the arrangement of the first and second circuit lines L1 and L2 (or their extensions) is not limited to the crisscross pattern shown in this embodiment; for example, the first and second circuit lines L1 and L2 may be parallel but staggered. The plurality of bonding positions Pc and Pc' in this embodiment are regularly arranged, and all micro-photoelectric elements 30 corresponding to these bonding positions Pc and Pc' correspond to units formed by the first and second circuit lines L1 and L2 (or their extensions), thereby forming a matrix array. However, this is not a limitation. Furthermore, the first and second circuit lines L1 and L2 (or their extensions) in the circuit layer 20 of this embodiment may be designed as a single-layer structure or a multi-layer structure. For example, the first and second circuit lines L1 and L2 in a single-layer structure may be electrically disconnected at their intersections by means of an insulating layer or other means. Alternatively, the first and second circuit lines L1 and L2 in a single-layer or multi-layer structure may further form conductive pads at locations corresponding to the bonding positions Pc and Pc' of the micro-photoelectric elements 30 and 30', or / and the repair position Pr of the auxiliary component 40. The circuit layer 20 may be of various types, with circuit designs varying greatly depending on their functions. Therefore, the circuit layer 20 described and illustrated herein is provided for ease of understanding only and is not intended to limit the present invention.

[0057] It is worth noting that when a micro-photoelectric element 30' is classified as defective, this embodiment can select a good replacement for the micro-photoelectric element 30', namely a supplementary component 40. By being placed adjacent to the micro-photoelectric element 30', this component can establish a new circuit connection with the circuit layer 20, thereby replacing the circuit connection between the micro-photoelectric element 30' and the circuit layer 20. Furthermore, the replacement of the old circuit connection with the new circuit connection can be achieved through pre-design of the circuit layer 20. Alternatively, as in this embodiment, a cut C can be formed by laser cutting in the circuit layer 20 adjacent to the micro-photoelectric element 30', such as the extended section of the second circuit line L2, thereby interrupting the circuit connection between the micro-photoelectric element 30' and the circuit layer 20. Furthermore, there are other alternatives for interrupting the electrical connection between the micro-photoelectric element 30' and the circuit layer 20. For example, a laser cut C can be formed on the micro-photoelectric element 30' itself to destroy its structure or function, or a sufficiently strong laser can be applied to the micro-photoelectric element 30' to blast or vaporize it. Blasting or vaporizing the micro-photoelectric element 30' with a sufficiently strong laser can also be considered a method of removing the micro-photoelectric element 30'. For another example, while this embodiment describes forming the cut C on the circuit layer 20 using a laser, plasma can also be used to form the cut C on the circuit layer 20. Therefore, the method of forming the cut C in the present invention is not limited to laser cutting.

[0058] In this embodiment, these micro-photoelectric elements (including defective micro-photoelectric elements 30') collectively form a matrix array. The auxiliary element 40, based on an offset D greater than zero, replaces the circuit connection between the micro-photoelectric elements 30' and the circuit layer 20 by placing them aside and establishing circuit connection with the circuit layer 20. This method can be understood as a repair method for the micro-photoelectric element matrix array, and the auxiliary element 40 can be understood as a repair element outside the micro-photoelectric element matrix array. In this disclosure, replacing circuit connection refers to replacing the circuit connection between one electrode of the auxiliary element 40 electrically connecting to the second circuit line L2 in the circuit layer 20 and another electrode of the auxiliary element 40 electrically connecting to the first circuit line L1 in the circuit layer 20. Furthermore, the circuit corresponding to the repair position Pr can be formed in pre-design before the repair, or in a post-process after the defective bonding position Pc' is discovered. Details will be described later. As can be seen here, by placing a replacement component 40 next to a selected micro-photoelectric component and laser spot welding the replacement component 40, a defective micro-photoelectric component (micro-photoelectric component 30') can be replaced with the replacement component 40 (a new, functional micro-photoelectric component) without damaging other functioning micro-photoelectric components 30 surrounding the micro-photoelectric component 30'. This is not only effective and efficient, but can be widely applied to repair various optoelectronic devices primarily based on micro-photoelectric components, and the repair cost is clearly manageable. Furthermore, laser spot welding can focus light from any surface S1 or S2 of the target substrate 10 toward the other surface S2 or S1. Furthermore, the focused light can be infrared or ultraviolet light of varying wavelengths, for example. Therefore, when the target substrate 10 is made of a material that allows non-visible light such as infrared or ultraviolet light to pass through, the directionality of the focused light (laser spot welding) is not restricted. It is worth noting that laser spot welding can cause slight carbonization or blackening at the spot weld due to high temperatures, resulting in visually discernible low reflectivity. Therefore, the weld between the circuit layer 20 and the auxiliary component 40 can be defined to have a reflectivity of less than 20% (the reflectivity of the electrodes when not welded can be as high as 80%). The reflectivity of the aforementioned weld can also be between 10% and 20%, or even less than 10%. It is noted that although these micro-photoelectric components (including defective micro-photoelectric components 30') are transferred to the target substrate 10 through different forms of mass transfer steps, all of these micro-photoelectric components (including defective micro-photoelectric components 30') are electrically connected to the target substrate 10 through thermal effects (or other means). Therefore, the reflectivity of the welds where the multiple pre-placed micro-photoelectric components 30, 30' are connected to the target substrate 10 by heating and melting the electrodes (i.e., thermal effects) or other means is still visually distinguishable from the carbonization or blackening phenomenon formed at the welds by high-power laser spot welding of the selected auxiliary component 40.It should be noted that even if the plurality of pre-determined micro-photoelectric elements 30 and 30 ′ are formed in other ways, they can still be distinguished visually, which will be explained later.

[0059] [Second embodiment]

[0060] Please refer to Figure 1B 、 Figure 2B This is a schematic diagram of a second embodiment of the optoelectronic device of the present invention. Similar to the optoelectronic device 100 of the first embodiment, optoelectronic device 100' also includes a target substrate 10, a circuit layer 20, a plurality of micro-photoelectric elements, and a supplementary component 40. The difference is that in this embodiment, the offset D is zero, the repair position Pr is the bonding position Pc', and the supplementary component 40 can replace the aforementioned micro-photoelectric element 30' and be positioned at the repair position Pr. Similarly, the supplementary component 40 and the circuit layer 20 form a new circuit connection, replacing the previous circuit connection. The aforementioned micro-photoelectric element 30' can be removed from the bonding position Pc' using a laser. Before or after removal, the supplementary component 40 can be laser spot welded to the conductive layer 20 at the bonding position Pc' (repair position Pr). Therefore, in this embodiment, the supplementary component 40 and the micro-photoelectric elements (excluding the defective micro-photoelectric elements 30') together form part of a matrix array.

[0061] [Third embodiment]

[0062] Combining the first and second embodiments, the offset D is greater than zero, and the defective micro-photoelectric elements 30' can be removed simultaneously, and the auxiliary member 40 can be further placed at the repair position Pr next to the bonding position Pc'. Since the auxiliary member 40 is placed next to the defective micro-photoelectric elements 30', it does not form a regular matrix array with these micro-photoelectric elements (excluding the defective micro-photoelectric elements 30').

[0063] [Fourth embodiment]

[0064] Similar to the second embodiment, the offset D is equal to zero: the so-called defective bonding position Pc' on the target substrate 10 is that at least one bonding position Pc has a vacancy (i.e., no micro-photoelectric element 30, 30' is filled). In this case, the offset D is equal to zero, and the repair position Pr is the bonding position Pc'. The auxiliary component 40 can be directly placed at the repair position Pr without the step of removing defective products.

[0065] In the first to fourth embodiments, the electrodes of the auxiliary component 40 are welded to the circuit layer 20 by laser spot welding, which is sufficient to distinguish them from other micro-photoelectric components 30 that have not been laser spot welded. For example, the weld is defined as having a reflectivity of less than 20%, which can be visually distinguished.

[0066] [Fifth embodiment]

[0067] Please refer to Figure 5 FIG. 5 is a schematic diagram of a fifth embodiment of the optoelectronic device of the present invention. The optoelectronic device 100a is similar to the optoelectronic device 100 of the first embodiment and also includes a target substrate 10, a circuit layer 20, a plurality of micro-photoelectric elements 30 (30'), and a supplementary component 40. The difference is that the first and second circuit lines L1 and L2 in the circuit layer 20 are designed so that the micro-photoelectric elements 30 (30') in this embodiment are located at the ends of the extended segments of the first and second circuit lines L1 and L2. The supplementary component 40 placed adjacent to the defective micro-photoelectric element 30' is further away from the ends of the extended segments of the first and second circuit lines L1 and L2 than the defective micro-photoelectric element 30'. Furthermore, before or after placement of the supplementary component 40, a cut C is formed by laser cutting in the circuit layer 20 adjacent to the micro-photoelectric element 30', such as the extended segments of the first and second circuit lines L1 and L2. Alternatively, a cut C may be formed across the middle of the micro-photoelectric element 30' to destroy the structure or function of the micro-photoelectric element 30'. Obviously, no matter how the bonding position Pc (corresponding to the micro optoelectronic device 30 ′) and the repair position Pr (corresponding to the auxiliary component 40 ) are arranged relative to each other on the target substrate 10 , the present invention will not be affected.

[0068] [Sixth embodiment]

[0069] Please refer to Figure 6A 、 6B , which is a schematic diagram of different states of the sixth embodiment of the photovoltaic device of the present invention. Figure 6AThe optoelectronic device 100c is similar to the optoelectronic device 100 of the first embodiment and also includes a target substrate 10, a circuit layer 20, a plurality of micro-optoelectronic element groups, and at least one auxiliary component 40. Each micro-optoelectronic element group includes at least a red micro-optoelectronic element 30R, a green micro-optoelectronic element 30G, and a blue micro-optoelectronic element 30B. In this embodiment, these micro-optoelectronic elements 30R, 30G, and 30B each have one electrode electrically connected to a circuit line C1, C2, and C3 in the circuit layer 20, respectively, while the other electrode shares the same electrical property in the circuit layer 20. The target substrate 10 is pre-configured with a matrix of bonding position groups and repair positions Pr adjacent to and offset from the bonding position groups. Specifically, the bonding position groups include at least bonding positions Pc corresponding to the red micro-photoelectric element 30R, the green micro-photoelectric element 30G, and the blue micro-photoelectric element 30B. The repair positions Pr are offset relative to the bonding position group as a whole and also have corresponding offsets relative to each micro-photoelectric element, as will be described later. In this embodiment, the three bonding positions Pc corresponding to the three micro-photoelectric elements 30R, 30G, and 30B in each bonding position group, and the repair positions Pr corresponding to each bonding position group, collectively constitute a pixel unit. These multiple pixel units form a regular matrix array, forming the display area of ​​the optoelectronic device 100c of this embodiment. In this embodiment, the micro-photoelectric elements 30R, 30G, and 30B are shown arranged horizontally, but this arrangement is not limited to horizontal alignment, and the number of repair positions Pr is not limited to a single pixel.

[0070] The structure of the pixel unit in this embodiment is described in detail below. Each bonding position group includes three bonding positions Pc corresponding to the three micro-photoelectric elements 30R, 30G, and 30B. Therefore, the repair position Pr is offset by an offset DR, an offset DG, and an offset DB relative to the red micro-photoelectric element 30R, the green micro-photoelectric element 30G, and the blue micro-photoelectric element 30B, respectively. Figure 6AEach circuit line C1, C2, and C3 of the circuit layer 20 further has a circuit extension segment C1e, C2e, and C3e; wherein the circuit extension segments C1e, C2e, and C3e are respectively extended from the circuit lines C1, C2, and C3 and are respectively provided with conductive portions J1, J2, and J3 with the aforementioned circuit lines C1, C2, and C3 so as to be electrically connected respectively; therefore, the circuit lines C1, C2, and C3 are respectively extended with the circuit extension segments C1e, C2e, and C3e and provide external electrical connections. The circuit layer 20 further defines a repair line RL disposed opposite to and electrically independent of the circuit extensions C1e, C2e, and C3e. The circuit extensions C1e, C2e, and C3e may intersect and overlap with the repair line RL as in this embodiment, with ports JR, JG, and JB defined at the intersections. At this point, the circuit extensions C1e, C2e, and C3e at ports JR, JG, and JB are "unconnected" to the repair line RL. "Unconnected" in this context means that there is no electrical connection between the circuit extensions C1e, C2e, and C3e. At this time, one of the electrodes constituting the red micro-photoelectric element 30R, the green micro-photoelectric element 30G, the blue micro-photoelectric element 30B, and the auxiliary element 40 is electrically connected to one another, while the other electrodes are respectively connected to the corresponding circuit lines C1, C2, and C3 and the repair line RL. This allows the circuit connection between the other electrode of the corresponding red micro-photoelectric element 30R and the circuit layer 20 to be replaced by the circuit connection between the other electrode of the auxiliary element 40 and the circuit layer 20. It should be noted that in this embodiment, the red micro-photoelectric element 30R, the green micro-photoelectric element 30G, the blue micro-photoelectric element 30B, and the auxiliary element 40 are illustrated as having two electrodes. However, the micro-photoelectric elements of the present invention can include more than two electrodes. As long as one electrode of the auxiliary element is electrically connected to one of the micro-photoelectric elements, and one electrode of the auxiliary element and the corresponding micro-photoelectric element are electrically connected to their respective corresponding circuit lines, the present invention covers this.

[0071] like Figure 6BIf the red micro-photoelectric element 30R is defective, a functioning red micro-photoelectric element is selected as a supplementary component 40 and placed at the repair position Pr on the target substrate 10. The supplementary component 40 is laser spot welded to the circuit layer 20, and the laser melts the port JR on the repair line RL, establishing electrical connection between the circuit extension C1e and the repair line RL. Because one electrode of the supplementary component 40 is already electrically connected to the red micro-photoelectric element 30R (and the green micro-photoelectric element 30G and the blue micro-photoelectric element 30B), the other electrode of the supplementary component 40 establishes electrical connection with the circuit line C1 in the circuit layer 20 via the repair line RL, the port JR, and the circuit extension C1e (as indicated by arrow dR), replacing the other electrode of the red micro-photoelectric element 30R with the circuit line C1 in the circuit layer 20. Note that the other unwelded ports JB and JG remain unconnected (not electrically connected). Furthermore, the laser-welded port JR, similar to the welded portion of the auxiliary component 40, is defined to have a reflectivity of less than 20%. A laser cut C may be formed in the circuit line C1 of the circuit layer 20 near the electrode of the red micro-photoelectric element 30R to interrupt the electrical connection between the aforementioned electrode of the red micro-photoelectric element 30R and the circuit layer 20.

[0072] Briefly, the optoelectronic device 100c of this embodiment includes a target substrate 10, a circuit layer 20, a plurality of micro-photoelectric element groups electrically connected to the circuit layer 20, and at least one auxiliary component 40 adjacent to at least one of the micro-photoelectric element groups. Each micro-photoelectric element group includes at least a red micro-photoelectric element 30R, a green micro-photoelectric element 30G, and a blue micro-photoelectric element 30B. The at least one auxiliary component 40 is electrically connected to the circuit layer 20. The red micro-photoelectric element 30R, the green micro-photoelectric element 30G, the blue micro-photoelectric element 30B, and the at least one auxiliary component 40 are electrically connected to each other via one of their electrodes (i.e., they are electrically common). A port JR on the repair line RL electrically connects the repair line RL to the circuit extension C1e, establishing electrical communication between the other electrode of the at least one auxiliary component 40 and the circuit layer 20. A cutout C is formed in the circuit layer 20 near the other electrode of one of the micro-photoelectric elements 30R in the corresponding at least one micro-photoelectric element group, establishing electrical connection between the at least one auxiliary component 40 and the circuit layer 20, thereby replacing the electrical connection of the micro-photoelectric element 30R in the corresponding at least one micro-photoelectric element group. The cutout C is further defined between the conductive portion J1 and the micro-photoelectric element 30R. Therefore, regardless of the number of components in the auxiliary component and its corresponding micro-photoelectric element, the present invention can achieve the same technical effects using technical means equivalent to those of the present invention.

[0073] [Seventh embodiment]

[0074] As described in the first embodiment, the repair position Pr in the present invention can be formed after the defective bonding position Pc' is found, that is, the circuit and / or the conductive pad at the corresponding repair position Pr can be formed in a post-process. Figure 7A 、 7B Similar to the sixth embodiment, optoelectronic device 100d includes a target substrate 10, a circuit layer 20, a plurality of micro-photoelectric element groups electrically connected to the circuit layer 20, and at least one auxiliary component 40. Each micro-photoelectric element group includes at least a red micro-photoelectric element 30R, a green micro-photoelectric element 30G, and a blue micro-photoelectric element 30B. For example, each of these micro-photoelectric elements 30R, 30G, and 30B has one electrode electrically connected to each circuit line C1, C2, and C3 in the circuit layer 20, while the other electrode shares the same electrical property in the circuit layer 20. The target substrate 10 is pre-determined with an array of bonding position groups and repair positions Pr adjacent to and offset from these bonding position groups. Each bonding position group includes three bonding positions Pc corresponding to the micro-photoelectric elements 30R, 30G, and 30B. Therefore, the repair positions Pr are offset relative to the red micro-photoelectric element 30R, the green micro-photoelectric element 30G, and the blue micro-photoelectric element 30B by respective amounts DR, DG, and DB. Each of the red micro-photoelectric element 30R, the green micro-photoelectric element 30G, the blue micro-photoelectric element 30B, and the at least one auxiliary element 40 has two electrodes.

[0075] The difference from the sixth embodiment is that the circuit lines C1, C2, C3 of the circuit layer 20 are as follows: Figure 7A At this point, the corresponding circuit extensions C1e, C2e, C3e and their conductive portions J1, J2, and J3 have not yet been extended. The circuit layer 20 defines a repair line RL that is arranged opposite to and electrically independent of the circuit lines C1, C2, and C3, but does not define ports JR, JG, and JB. After a defective bonding position Pc' or defective product 30R is found, the target substrate 10 is placed in an operating chamber filled with an organic metal gas, and a laser is applied to deposit metal along with the laser to form a structure such as Figure 7B In this example, only the circuit extension C1e and its conductive portion J1 are provided for the red micro-photoelectric element 30R. Furthermore, laser welding is performed at the port JR where the circuit extension C1 intersects the repair line RL, establishing electrical connectivity between the circuit extension C1 and the repair line RL. Alternatively, a cut C is formed in the circuit layer 20 between the conductive portion J1 and the red micro-photoelectric element 30R. Furthermore, if the circuit extension C1e and its conductive portion J1 can be formed later, the repair line RL can be formed after a defective bonding location Pc' or a defective product 30R is discovered.

[0076] [Eighth embodiment]

[0077] In contrast to any of the first through seventh embodiments, the micro-photoelectric components 30 and 30' pre-mounted on the target substrate 10 are electrically connected to the circuit layer 20 on the target substrate 10 by laser spot welding; the auxiliary component 40 achieves electrical connection to the circuit layer 20 through a thermal effect. In this case, the laser spot welding results in a reflectivity of less than 20% at the welded joint of the micro-photoelectric components 30 and 30', while the auxiliary component 40 does not. Clearly, the carbonization or blackening of the laser spot welding micro-photoelectric components 30 and 30', resulting in a visually lower reflectivity (less than 20%), is also distinguishable from that of the auxiliary component 40.

[0078] [Ninth embodiment]

[0079] Corresponding to the first to third embodiments and the fifth to seventh embodiments, the micro-photoelectric components 30 and 30' pre-placed on the target substrate 10 are electrically connected to the circuit layer 20 on the target substrate 10 by laser spot welding. Although the auxiliary component 40 is also electrically connected to the circuit layer 20 by laser spot welding, the auxiliary component 40 can be distinguished from the micro-photoelectric component 30' because the offset D is greater than zero.

[0080] [Tenth embodiment]

[0081] Corresponding to the first to third embodiments and the fifth to seventh embodiments, the micro-photoelectric elements 30 and 30' pre-placed on the target substrate 10 are electrically connected to the circuit layer 20 on the target substrate 10 by means of a thermal effect. Although the auxiliary component 40 also achieves electrical connection to the circuit layer 20 through a thermal effect, the auxiliary component 40 can be distinguished from the micro-photoelectric element 30' because the offset D is greater than zero.

[0082] [Eleventh embodiment]

[0083] See also Figure 3 、 Figure 3A 、 Figure 4A 、 Figure 4B 、 Figure 8 、 Figures 9A to 9E , which are related flow charts and schematic diagrams of one embodiment of the repair method for a photovoltaic device implemented according to the first embodiment.

[0084] Please see first Figure 3, depicts a portion of an optoelectronic device 100a. The optoelectronic device 100a comprises a target substrate 10, a circuit layer 20 disposed on the target substrate 10, and a plurality of micro-photoelectric elements electrically connected to the circuit layer 20. The target substrate 10 has two opposing surfaces S1 and S2. The target substrate 10 defines a plurality of regularly arranged bonding positions Pc, and a repair position Pr corresponding to at least one bonding position Pc and offset from the at least one bonding position Pc by a distance D. The circuit layer 20 comprises at least a plurality of first circuit lines L1 and a plurality of second circuit lines L2, and at least one extension extending from each of the first circuit lines L1 and the second circuit lines L2. Each micro-photoelectric element comprises at least two electrodes corresponding to and electrically connected to the first circuit lines L1 and the second circuit lines L2 of the circuit layer 20. In this embodiment, the bonding positions Pc are arranged in a matrix array consisting of N rows and M columns, where N and M are at least greater than one, and N may be equal to M. The micro-photoelectric elements are disposed at at least a portion of these bonding positions Pc on the target substrate 10.

[0085] It is noteworthy that multiple properly functioning bonding positions Pc and at least one malfunctioning bonding position irregularly distributed among the normal bonding positions Pc are further plotted as Pc'. The corresponding properly functioning bonding positions Pc are micro-photoelectric components 30 (hereinafter referred to as good products), while the malfunctioning bonding positions Pc' are either empty (not filled with any micro-photoelectric components 30, 30') or malfunctioning micro-photoelectric components (hereinafter referred to as defective products). Multiple defective products 30a, 30b, and 30c are plotted here as an example. As described in the first embodiment, the so-called defective products 30a, 30b, and 30c can be determined based on different conditions or acceptance criteria set according to various characteristics. The definition of a good product 30 is relative to the defective products 30a, 30b, and 30c. This is for illustrative purposes only and is not intended to be limiting.

[0086] It is worth noting that the repair position Pr can be pre-formed during the fabrication of the target substrate 10 (circuit layer 20), and / or a conductive pad for power connection can be pre-formed. Alternatively, after the defective joint position Pc' is discovered, the target substrate 10 can be placed in an operating chamber filled with an organometallic gas, lasered, and metal deposited with the laser to form an extension of the aforementioned repair position Pr and / or its conductive pad. Therefore, the repair position Pr in this case can be formed in a pre-process design before repair, or it can be formed in a post-process after the defective joint position Pc' is discovered. In other words, the repair position Pr in the present invention is not limited to being defined relative to the defective joint position Pc', but can also be defined relative to all predetermined joint positions Pc.

[0087] See Figure 3A ,for Figure 3The partially enlarged view is a 2X2 array of micro-photoelectric elements, which includes a defective product 30b and other good products 30. For further understanding, the target substrate 10 is marked as a bonding position Pc for the good product 30, a bonding position Pc' for the defective product 30b, and a repair position Pr with an offset D relative to the bonding position Pc'.

[0088] Figure 4A 、 Figure 4B Schematic diagrams of the transfer device 50 before and after picking up the supplementary component 40. The transfer device 50 of the present invention is related to the following pending Taiwan patent applications, all of which are owned by the same owner as the present application, and all of the contents of the corresponding patent applications are incorporated herein by reference: Taiwan Patent Application No. 107142782, entitled "Optoelectronic Semiconductor Stamp, Method of Manufacturing the Same, and Optoelectronic Semiconductor Device." For ease of description, the transfer device 50 corresponds to Figure 3A The target substrate 10 has a size that is exactly the same as Figure 3A The transfer device 50 comprises a transfer substrate 51 and a buffer material 52 disposed on the transfer substrate 51. The transfer substrate 51 has a sufficient hardness to support the buffer material 52 in evenly contacting the multiple micro-electromechanical components on the target substrate 10. The buffer material 52 is made of a shock-absorbing material, such as silicone, to prevent damage to the micro-electromechanical components. The buffer material 52 has a contact surface P, which further ensures the accuracy and precision of the transfer of the auxiliary component 40. It is worth noting that each micro-electromechanical component (including good and defective components 30 and 30') and the auxiliary component 40 is defined to have a height of at least 5μm (micrometers); the term "at least" includes "greater than" and "equal to." To accommodate the slightly varying heights of the micro-electromechanical components pre-placed on the target substrate 10, the buffer material 52 is defined to have a thickness of at least 4μm to ensure sufficient height difference between the highest and lowest micro-electromechanical components. For example, when the transfer device 50 transfers the auxiliary component 40 to the target substrate 10, the target substrate 10 already has good products 30 and defective products 30' pre-placed thereon. Since the transfer device 50 is provided with a buffer material 52, although the buffer material 52 may contact part of the good products 30 and defective products 30' due to the approaching process, the buffer material 52 is sufficient to absorb shock and cushion the impact, and does not damage the pre-placed structure of the target substrate 10 (such as the good products 30 and defective products 30'). Therefore, the auxiliary component 40 can be transferred simultaneously without damaging the circuit structure or other good products 30 surrounding the defective product 30'.

[0089] For ease of understanding, in the transposition device 50, as shown Figure 4A, a plurality of stamp positions 54 may be first defined on the touch pressure plane P, which may respectively match at least the bonding positions Pc and Pc' of the good product 30 and the defective product 30b on the target substrate 10, or the plurality of stamp positions 54 may directly match only the repair position Pr defined by the bonding position Pc' of the defective product (that is, without matching the bonding position Pc of the good product), or the plurality of stamp positions 54 may simultaneously match the bonding position Pc' of some defective products and the repair position Pr of some defective products.

[0090] Figure 8 This is a flow chart of this embodiment. Figures 9A to 9E It is based on Figure 3A The side view diagram based on FIG is used to illustrate the repair process of the optoelectronic device 100a. Figure 5 As shown, the repair method of the photovoltaic device of this embodiment includes at least the following steps S10, S20, S30, and S40:

[0091] Step S10: Select one of the micro-photoelectric components to Figure 3A 、 Figure 9A For explanation, selecting one of the micro-photoelectric components means identifying a defective product 30 b or a gap among the micro-photoelectric components on the target substrate 20 , thereby further determining a defective bonding position Pc′ and a repair position Pr defined according to the defective bonding position Pc′.

[0092] Specifically, it corresponds to the aforementioned defective product 30 b or the bonding position Pc′ that is not filled with any micro optoelectronic element 30 , 30 ′.

[0093] Step S20: The transfer device 50 first picks up the auxiliary component 40 and transfers it to the repair position Pr of the target substrate 10. Before the transfer device 50 picks up the auxiliary component 40, Figure 4A After the transposition device 50 picks up the auxiliary component 40, Figure 4B As shown, the supplemental component 40 is located at one of the stamped locations 54 .

[0094] In this embodiment, the auxiliary component 40 is a flip-chip structure, and a dual electrode is provided on the side away from the contact pressure plane P. It is not necessary for this embodiment to explain whether the auxiliary component 40 is obtained from the native substrate or the non-native substrate by the transfer device 50. Figure 4B After the transfer device 50 picks up the supplementary component 40, the transfer device 50 is connected to the Figure 3A The target substrates 10 are brought close to each other (eg Figure 9B until the auxiliary member 40 contacts the repair position Pr on the target substrate 10 (as shown in FIG. Figure 9C shown).

[0095] Step S30: Figure 9DAs shown, the transfer device 50 is maintained in contact with the good product 30 and the defective product 30' identified in the previous step on the target substrate 10, so that the auxiliary component 40 corresponds to the repair position Pr. The auxiliary component 40 is then illuminated at the repair position Pr, causing the two electrodes of the auxiliary component 40 to be welded to the first circuit line L1 and the second circuit line L2 of the circuit layer 20 of the target substrate 10, thereby electrically connecting them.

[0096] In the present invention, the size of the transfer device 50 can be equivalent to or smaller than the target substrate 10. In this embodiment, the size of the transfer device 50 is smaller than the target substrate 10. Therefore, when the transfer device 50 is kept in contact with the target substrate 10, the micro-photoelectric elements that are touched are part of the aforementioned good products 30 and the defective products 30' identified in the aforementioned steps.

[0097] In this embodiment, the focused light irradiation is a high-power infrared laser R that spot-welds the two electrodes of the auxiliary component 40 from the surface S2 of the target substrate 10 .

[0098] Step S40: Figure 9E As shown, the transfer device 50 is removed. It is explained here that since the auxiliary component 40 has been welded to the circuit layer 20 in the target substrate 10, it is firmly connected to the target substrate 10 and is not moved or damaged by the removal of the transfer device 50.

[0099] It is worth noting that the multiple steps of this embodiment are one example of the present invention. This embodiment chooses to illustrate the case where the offset D is greater than zero; however, regardless of whether the offset D is equal to zero or whether defective products are removed, all steps in this embodiment can be interpreted equally.

[0100] In addition, when the offset D is greater than zero, the offset stamp position 54 can be used to pick up the supplementary part 40 , or the non-offset stamp position 54 can be used to first pick up the supplementary part 40 and then the transfer device 50 can move it according to the offset D.

[0101] Furthermore, when the offset D is greater than or equal to zero, a mode can be established respectively. The user can decide to select one of the modes before repairing, or the program can determine the selected mode during the repairing process.

[0102] Furthermore, the repair position Pr may be defined based on each joint position Pc, or may be defined based on only the defective joint position Pc'.

[0103] In addition, the target substrate 10 or the transfer device 50 can be made of a material that allows infrared, ultraviolet and other invisible light to pass through, or both of them. The laser R can selectively spot weld the two electrodes of the auxiliary component 40 from the surfaces S1 and S2 of the target substrate 10 .

[0104] Also, before or after laser spot welding, Figure 10 Laser cuts C are made on the circuit layer 20 near the bonding position Pc′ or on the defective product 30 ′ itself, or the defective product 30 ′ is directly removed to interrupt the circuit connection between the defective product 30 ′ and the circuit layer 20 .

[0105] In addition, when there are multiple auxiliary parts 40, that is, when there are multiple defective products 30', the relative positions of auxiliary parts 40 of the same nature (for example, the same red micro-photoelectric elements) can be kept unchanged, so that when they are picked up by the transfer device 50, the stamp position 54 corresponding to the bonding position Pc' or the repair position Pr can be maintained.

[0106] In addition, the method further includes re-forming a repair position (ie, re-forming a required circuit / conductive pad) after a bad bonding position or a bad product is found.

[0107] The aforementioned embodiments are for illustrative purposes only and are not intended to be limiting; they will be further described later.

[0108] The twelfth to seventeenth embodiments are more detailed descriptions of the aforementioned various implementation modes.

[0109] [Twelfth embodiment]

[0110] Figure 11A This is a flowchart of the twelfth embodiment, illustrating a repair method when the offset D is greater than zero. The optoelectronic device of this embodiment is similar to the third embodiment, and its repair method is similar to the eleventh embodiment, including at least the following steps S10 through S50: For steps S10 through S40, please refer to the eleventh embodiment. Step S50: Laser cuts C are created in the circuit pattern 20 near the bonding position Pc' to interrupt the electrical connection between the defective product 30' and the circuit layer 20. This ensures that the electrical connection between the auxiliary component 40 and the circuit layer 20 replaces the electrical connection between the micro optoelectronic element 30' and the circuit layer 20.

[0111] It is worth noting that, in addition to the cut mark C, the circuit connection formed by the auxiliary component 40 and the circuit layer 20 can replace the circuit connection between the micro-photoelectric element 30' and the circuit layer 20, and step S50 is not necessary due to the existing design of the circuit layer 20 or other methods. Therefore, other methods besides the cut mark C should be considered equivalent to the third and eleventh embodiments.

[0112] In this embodiment, steps S20 to S50 are defined as a step S100a.

[0113] [Thirteenth embodiment]

[0114] Figure 11BThis is a flowchart of the thirteenth embodiment, which illustrates a repair method when the offset D is greater than zero. The photovoltaic device of this embodiment is similar to the third embodiment, and its repair method is similar to the twelfth embodiment, including at least the following steps S10 to S50: Steps S10, S30, S40, and S50, refer to the twelfth embodiment.

[0115] Step S20a includes steps S22a and S24a. Step S22a: The auxiliary component 40 is positioned at the stamped position of the transfer device 50. The stamped position matches the bonding position Pc' of the defective product 30' on the target substrate 10. Step S24a: The transfer device 50 is moved according to the offset D, so that the auxiliary component 40 is positioned at the corresponding repair position Pr on the target substrate 10.

[0116] In this embodiment, steps S20 to S50 are defined as a step S100b.

[0117] [Fourteenth embodiment]

[0118] Figure 11C This is a flowchart of the fourteenth embodiment, which illustrates a repair method when the offset D is greater than zero. The photovoltaic device of this embodiment is similar to the third embodiment, and its repair method is similar to the twelfth embodiment, including at least the following steps S10 to S50: Steps S10, S30, S40, and S50, refer to the twelfth embodiment.

[0119] Step S20b includes steps S22b and S24b. Step S22b: The auxiliary component 40 is positioned at a stamped position on the transfer device 50, where the stamped position matches the repair position Pr on the target substrate 10. Step S24b: The transfer device 50 is moved so that the auxiliary component 40 is positioned at the corresponding repair position Pr on the target substrate 10.

[0120] In this embodiment, steps S20 to S50 are defined as a step S100c.

[0121] [Fifteenth embodiment]

[0122] Figure 11D This is a flowchart of the fifteenth embodiment; for the repair method in which the offset is equal to zero as in the second and fourth embodiments, this embodiment includes at least the following steps S10 to S40: wherein, steps S10, S30, and S40, refer to the eleventh embodiment.

[0123] Step S20c includes steps S22c and S24c. Step S22c: If defective products 30' on the target substrate 10 need to be removed, proceed to step S24c. If defective products do not need to be removed, proceed to step S26c. Step S24c: Remove the defective products 30'. Step S26c: Move the transfer device 50 so that the auxiliary component 40 is positioned at the corresponding bonding position Pc' on the target substrate 10. Bonding position Pc now becomes the repair position Pr.

[0124] In this embodiment, steps S20 to S40 are defined as a step S100d.

[0125] [Sixteenth embodiment]

[0126] Figure 11E This is a flowchart of the sixteenth embodiment. This embodiment integrates the aforementioned repair methods and utilizes different mode selections. This embodiment includes at least the following steps S10, S100a, S100b, S100c, S100d, and SSW. Step S10 is similar to the eleventh embodiment. Step SSW is mode selection. When the selected offset is zero, the process proceeds to step S100d (i.e., the fifteenth embodiment). When the selected offset is greater than zero, the process proceeds to step S100a (i.e., the twelfth embodiment), step S100b (i.e., the thirteenth embodiment), and step S100c (i.e., the fourteenth embodiment).

[0127] This embodiment is just one of the selected modes. However, as long as any embodiment of the present invention can be applied, it should be covered by this embodiment or the present invention.

[0128] [Seventeenth embodiment]

[0129] Figure 12 This is a flow chart of the sixth embodiment, which is a repair method when the offset D is greater than zero. This embodiment at least includes the following steps S10, S20, S30a, S40, and S50.

[0130] Step S10: Select one of the micro-photoelectric components 30R, 30G, and 30B. Identify a defective bonding position Pc′ on the target substrate 20 among the micro-photoelectric components 30R, 30G, and 30B. For example, the red light micro-photoelectric component 30R is a defective product. Then, define a repair position Pr based on the bonding position Pc′, as shown in FIG. Figure 6A It should be noted that the so-called bad bonding position Pc' includes a bonding position that is vacant, a red light micro-photoelectric component filled in the bonding position that is a bad product, or a red light micro-photoelectric component that is a good product but has poor electrical connection when filled in.

[0131] Step S20: The transfer device 50 first picks up the red light micro photoelectric element as the auxiliary component 40 and transfers it to the repair position Pr of the target substrate 10; Figure 6B As shown, the auxiliary component 40 is located at one of the stamping positions 54 . In this embodiment, the auxiliary component 40 is a flip-chip structure, and a dual electrode is provided on a side away from the contact plane P.

[0132] Step S30a includes step S32a and step S34a.

[0133] Step S32a: While the transfer device 50 is in contact with the micro-photoelectric components 30R, 30G, and 30B (including both good and defective components) (within an area corresponding to the size of the transfer device 50), focused laser light is applied to the repair position Pr of the auxiliary component 40, causing the two electrodes of the auxiliary component 40 to be welded to the circuit layer 20 of the target substrate 10. One electrode of the auxiliary component 40 is electrically connected to one electrode of the micro-photoelectric components 30R, 30G, and 30B, and the other electrode of the auxiliary component 40 is electrically connected to the repair line RL. The focused laser light is applied by a high-power (infrared) laser R from the surface S2 of the target substrate 10 to spot weld the two electrodes of the auxiliary component 40.

[0134] Step S34a: Laser ablation of the port JR on the repair line RL electrically connects the circuit extension C1e with the repair line RL. This allows the other electrode of the auxiliary component 40 to establish electrical connection with the circuit layer 20 (as indicated by the arrow dR), thereby replacing the other electrode of the red micro-photoelectric element 30R in electrical connection with the circuit layer 20.

[0135] Step S40: remove the transposing device 50.

[0136] Step S50 : forming a cut C on the circuit layer near the bonding position Pc′ or on the red micro-photoelectric element 30R itself, or applying a laser to the red micro-photoelectric element 30R itself to vaporize or explode it, thereby interrupting the circuit connection between the other electrode of the red micro-photoelectric element 30R and the circuit layer 20 .

[0137] The repair method of this embodiment may also be incorporated into any of the modes described in the twelfth through fifteenth embodiments, or / and into one of the selected modes described in the sixteenth embodiment. Therefore, whether the micro-photoelectric element 30 on the target substrate 10 comprises a single monochrome pixel or multiple color pixels, the present invention remains unchanged, and the same technical effects can be achieved using technical means equivalent to those of the present invention.

[0138] [Eighteenth embodiment]

[0139] This is the repair method of the seventh embodiment. After confirming the repair position Pr, the circuit extension segment C1e (or even the repair line RL) corresponding to the micro optoelectronic device 30R is formed. This further demonstrates the implementation flexibility of the repair method of the present invention in the process.

[0140] [Nineteenth embodiment]

[0141] In the eleventh to eighteenth embodiments, the pre-assembled micro optoelectronic components can be slightly changed from laser spot welding to electrical connection by thermal effect, with reference to the eighth to tenth embodiments.

[0142] In summary, the optoelectronic device and its repair method of the present invention can be widely applied to repair various optoelectronic devices, primarily micro-photoelectric components. They can be repaired on a target substrate equipped with multiple micro-photoelectric components without damaging the surrounding circuitry or other good micro-photoelectric components. This solves the conventional problem of repairing a large number of micro-photoelectric components on a circuit substrate, with minute spacing and dimensions, and uneven heights due to process or material errors.

[0143] The present invention further includes the following advantages: 1. The present invention provides an effective, efficient and cost-controlled repair method. 2. The repair method provided by the present invention can be used to repair a target substrate provided with a plurality of micro-photoelectric elements in a non-destructive manner. 3. The repair method provided by the present invention is not only effective, efficient and cost-controlled, but also replaces defective micro-photoelectric elements with good micro-photoelectric elements on a target substrate provided with other micro-photoelectric elements. 4. The repair method provided by the present invention can be applied to target substrates of active and passive matrices or single and color target substrates. 5. The means provided by the present invention for interrupting the circuit connection between defective products and the circuit layer can be laser cutting or laser evaporation. 6. The repair method provided by the present invention has a repair result that can mostly be distinguished visually in appearance.

[0144] The above description is for illustrative purposes only and is not intended to be limiting. Any equivalent modifications or variations that do not depart from the spirit and scope of the present invention should be included in the scope of the appended claims.

Claims

1. A photovoltaic device comprising: target substrate; The target substrate is preset with a plurality of bonding positions and a repair position corresponding to one of the bonding positions and having an offset relative to the target substrate, wherein the offset is greater than zero. A circuit layer is provided on the target substrate; A plurality of micro-photoelectric elements are disposed on the target substrate and electrically connected to the circuit layer; the micro-photoelectric elements are respectively disposed at at least a portion of the bonding position on the target substrate; as well as An auxiliary component is provided at the repair position on the target substrate; the auxiliary component has an electrode, and the electrode of the auxiliary component is electrically connected to the circuit layer; wherein, on the target substrate, the auxiliary component has an arbitrary position relative to the micro-photoelectric element; The target substrate defines a plurality of bonding position groups formed by the bonding positions, the repair position corresponds to and is adjacent to each bonding position group and is offset relative to each bonding position; the micro-photoelectric elements constitute a plurality of micro-photoelectric element groups, each corresponding to the bonding position groups; the auxiliary component is disposed at the repair position adjacent to one of the micro-photoelectric element groups; the auxiliary component and the plurality of photoelectric elements in the corresponding micro-photoelectric element group each have two electrodes, the auxiliary component being electrically connected to one of the electrodes of the plurality of photoelectric elements in the corresponding micro-photoelectric element group; and the circuit connection between the other electrode of the micro-photoelectric element in one of the corresponding micro-photoelectric element groups and the circuit layer is replaced by the circuit connection between the other electrode of the auxiliary component and the circuit layer. The colors of the micro-photoelectric elements in each of the micro-photoelectric element groups corresponding to each of the bonding position groups are different from each other.

2. The photovoltaic device according to claim 1, wherein The electrodes of the auxiliary component are laser spot welded to the circuit layer.

3. The photovoltaic device according to claim 2, wherein The reflectivity of the welding point between the circuit layer and the auxiliary component is defined to be less than 20%.

4. The photovoltaic device according to claim 1, wherein The micro-photoelectric elements form a matrix array; the auxiliary component is placed next to one of the micro-photoelectric elements.

5. The photovoltaic device according to any one of claims 1 to 3, wherein Each of the micro-photoelectric elements and the auxiliary component is a flip-chip micro-light emitting diode. 6 . The optoelectronic device according to claim 1 , further comprising a cutout, wherein the cutout interrupts the electrical connection between one of the micro-optoelectronic elements in the corresponding micro-optoelectronic element group and the circuit layer.

7. The photovoltaic device according to claim 1, wherein The circuit layer further includes a repair line corresponding to the repair position, a circuit extension section corresponding to one of the bonding positions in the bonding position group, and a port formed by the circuit extension section and the repair line; the port is electrically connected to the repair line.

8. The photovoltaic device according to claim 7, wherein The port is laser welded to the repair line.

9. The photovoltaic device according to claim 8, wherein The reflectivity at the welding point between the circuit layer and the port is defined to be less than 20%.

10. The photovoltaic device according to claim 1, wherein Each of the micro-photoelectric element groups includes a red light micro-photoelectric element, a green light micro-photoelectric element, and a blue light micro-photoelectric element.

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