Electronic module including a semiconductor package connected to a fluid heat sink

Abstract

An electronic module (100) comprises a semiconductor package (10), the semiconductor package (10) comprising a die carrier (11), a semiconductor die (12) arranged on the die carrier (11), at least one electrical conductor (13) connected to the semiconductor die (12), and an encapsulation (14) covering the die carrier (11), the semiconductor die (12), and the electrical conductor (13), such that a portion of the electrical conductor (13) extends to the outside of the encapsulation (14), and the module (100) further comprises an interposer (20) and a heat sink (30) through which a cooling medium can flow, wherein the semiconductor package (10) is arranged on the interposer layer (20), and wherein the interposer layer (20) is arranged on the heat sink (30).

Description

Technical Field

[0001] The present disclosure relates to an electronic module including a semiconductor package connected to a fluid heat sink. Background Art

[0002] Increasing power density is a major trend within the power semiconductor market. Traditional applications like uninterruptible power supplies (UPS) or emerging applications like electric vehicle (EV) charging are based on a modular approach: single modules of low power, standard size and footprint are connected in series to amplify the output power of the final system. Therefore, a cost-effective way to increase the system output power is to increase the power density of a single module.

[0003] Currently, typical semiconductor power modules are constructed on the basis of semiconductor bare die assemblies, which are often accompanied by problems such as high development effort and limited flexibility. Therefore, an object of the present disclosure is to reduce the development effort and increase the flexibility of building semiconductor power modules. Summary of the invention

[0004] One aspect of the present disclosure relates to an electronic module, which includes a semiconductor package, the semiconductor package including a die carrier, a semiconductor die disposed on the die carrier, at least one electrical conductor connected to the semiconductor die, and an encapsulation covering the die carrier, the semiconductor die, and the electrical conductor, so that a portion of the electrical conductor extends to the outside of the encapsulation, the electronic module also including an interposer layer and a heat sink through which a cooling medium can flow, wherein the semiconductor package is disposed on the interposer layer, and wherein the interposer layer is disposed on the heat sink. BRIEF DESCRIPTION OF THE DRAWINGS

[0005] The accompanying drawings are included to provide a further understanding of the embodiments and are incorporated into and constitute a part of this specification. The accompanying drawings illustrate the embodiments and, together with the description, are used to explain the principles of the embodiments. Other embodiments and many of the expected advantages of the embodiments will be readily understood as they become better understood by reference to the following detailed description.

[0006] The elements of the drawings are not necessarily to scale relative to each other. Like reference numerals designate corresponding similar parts.

[0007] Figure 1 A cross-sectional side view representation of an example of an electronic module including a single semiconductor package disposed on a fluid heat sink according to the present disclosure is shown.

[0008] Figure 2 include Figure 2 A to Figure 2D, and shows the assembly of an example of an electronic module, the electronic package including a plurality of semiconductor packages arranged on one side of a fluid heat sink including a control board on the top and bottom.

[0009] Figure 3 include Figure 3 A to Figure 3 E, and shows the assembly of an example of an electronic module including a plurality of semiconductor packages arranged on two opposing sides of a fluid heat sink including a control board on the top and bottom.

[0010] Figure 4 include Figure 4 A to Figure 4 D, and shows the assembly of an example of an electronic module comprising a plurality of semiconductor packages arranged on an aluminum fluid heat sink with an embedded isolator and a control board on top.

[0011] Figure 5 include Figure 5 A to Figure 5 D, and shows the assembly of an example of an electronic module comprising a plurality of semiconductor packages arranged on a fluid heat sink including a mounting frame for a control unit and resin casting.

[0012] Figure 6 include Figure 6 A to Figure 6 D, and shows the fabrication of a complete system consisting of an assembly of multiple electronic submodules, each of which includes a plurality of semiconductor packages arranged on one side of a fluid heat sink, the assembly including a control board on top.

[0013] Figure 7 include Figure 7 A to Figure 7 C, and again shows Figure 2 C's electronic module (A) and two possible circuit configurations or topologies that can be implemented with the electronic module, namely a 1-phase full-bridge circuit (B) and a 3-level Vienna circuit (C). DETAILED DESCRIPTION

[0014] In the following detailed description, reference is made to the accompanying drawings forming a part thereof, and specific embodiments in which the present disclosure can be practiced are shown by way of illustration in the accompanying drawings. In this regard, directional terms, such as "top", "bottom", "front", "back", "head", "tail", etc., are used with reference to the orientation of the described (one or more) drawings. Because the components of the embodiments can be positioned in a plurality of different orientations, the directional terms are used for illustrative purposes and are by no means limiting. It should be understood that other embodiments can be utilized and structural or logical changes can be made without departing from the scope of the present disclosure. Therefore, the following specific embodiments should not be understood in a restrictive sense, and the scope of the present disclosure is limited only by the appended claims.

[0015] It should be understood that the features of the various exemplary embodiments described herein may be combined with each other, unless specifically stated otherwise.

[0016] As used in this specification, the terms "joined", "attached", "connected", "coupled" and / or "electrically connected / electrically coupled" do not mean that the elements or layers must be directly in contact together; intervening elements or layers may be provided between the elements that are "joined", "attached", "connected", "coupled" and / or "electrically connected / electrically coupled", respectively. However, according to the present disclosure, the above terms may optionally also have the specific meaning that the elements or layers are directly in contact together, that is, no intervening elements or layers are provided between the elements that are "joined", "attached", "connected", "coupled" and / or "electrically connected / electrically coupled", respectively.

[0017] In addition, the word "above" used in relation to a portion, element, or material layer formed or located "on" a surface may be used herein to mean that the portion, element, or material layer is "indirectly located" (e.g., placed, formed, deposited, etc.) "on" the implied surface, wherein one or more additional portions, elements, or layers are arranged between the implied surface and the portion, element, or material layer. However, the word "above" used in relation to a portion, element, or material layer formed or located "on" a surface may optionally also have the following specific meaning: the portion, element, or material layer is "directly located" (e.g., placed, formed, deposited, etc.) "on" the implied surface, for example, in direct contact with the implied surface. DETAILED DESCRIPTION

[0019] Figure 1 A cross-sectional side view representation of an example of an electronic module according to the present disclosure is shown.

[0020] Figure 1The electronic module 100 includes a semiconductor package 10, which includes a die carrier 11, a semiconductor die 12 disposed on the die carrier 11, at least one electrical conductor 13 connected to the semiconductor die 12, and an encapsulation 14 covering the die carrier 11, the semiconductor die 12, and the electrical conductor 13, so that the lower main surface of the die carrier 11 is not covered by the encapsulation 14, and a part of the electrical conductor 13 extends to the outside of the encapsulation 14. The electronic module 100 also includes an interposer layer 20, and a heat sink 30 through which a cooling medium can flow, wherein the semiconductor package 10 is disposed on the interposer layer 20, wherein the interposer layer 20 is disposed on the heat sink 30. The die carrier 11 can be any one of a part of a lead frame, an isolated metal substrate (IMS), a direct copper bond (DCB), or an active metal brazing (AMB).

[0021] exist Figure 1 As can be seen in FIG. 1 , the electronic module 100 is configured such that the interposer layer 20 is partially embedded in the upper main surface of the heat sink 30. It should be added that it may also be the case that the interposer layer 20 is completely embedded in the heat sink 30, such that the upper surface of the interposer layer 20 and the upper surface 30 of the heat sink 30 are coplanar. In this way, not only the die carrier 11 but also the interposer layer 20 can act as a heat sink by effectively dissipating heat to the heat sink 30 which is almost all around.

[0022] However, it should be added that it may also be the case that interposer layer 20 is not embedded in heat sink 30 at all but is attached to the upper surface of heat sink 30 such that the upper surface of heat sink 30 is coplanar with the lower surface of interposer layer 20 .

[0023] according to Figure 1 In the example of the electronic module 100 of FIG. 1 , the interposer layer 20 is one of an isolated metal substrate (IMS), a direct copper bond (DCB), or an active metal braze (AMB).

[0024] according to Figure 1 According to an example of the electronic module 100, the interposer layer 20 is soldered or sintered to the heat sink 30. According to another example thereof, the interposer layer 20 is diffusion soldered to the heat sink 30. According to another example, the interposer layer 20 is connected to the heat sink 30 by using a conductive glue, in particular a silver conductive glue.

[0025] according to Figure 1 In the example of the electronic module 100 , the semiconductor package 10 is soldered, particularly diffusion soldered, or sintered onto or connected to the interposer layer 20 by using a conductive paste, particularly a silver conductive paste.

[0026] according to Figure 1In the example of the electronic module 100 , the solder layer or the sintered layer between the semiconductor package 10 and the interposer layer 20 is thicker than 10 μm.

[0027] according to Figure 1 In the example of the electronic module 100 , the solder layer or the sintered layer between the interposer layer 20 and the heat sink 30 is thinner than 10 μm.

[0028] according to Figure 1 In the example of the electronic module 100 , the solder layer or the sintered layer between the semiconductor package 10 and the interposer layer 20 is thicker than the solder layer or the sintered layer between the interposer layer 20 and the heat sink 30 .

[0029] according to Figure 1 In the example of the electronic module 100 , the semiconductor die 11 is one or more of a wide bandgap semiconductor die, a SiC die, or a GaN die.

[0030] according to Figure 1 An example of an electronic module 100, wherein the semiconductor die 11 is one or more of a semiconductor transistor die, a power semiconductor transistor die, a power IGBT die, a power MOSFET die, a semiconductor diode die, or a semiconductor thyristor die.

[0031] according to Figure 1 According to an example of an electronic module 100, the electronic module 100 further comprises two or more semiconductor packages. According to an example thereof, the semiconductor packages are essentially identical, for example, they all contain the same semiconductor transistor die, in particular a switch. For example, two semiconductor transistor switches can be connected in series or in parallel with each other. According to another example thereof, the semiconductor packages are different, for example, they contain different transistor dies or switches, or they contain at least one semiconductor transistor die or switch and at least one semiconductor diode die that can be connected in parallel with the semiconductor transistor switch.

[0032] according to Figure 1 In an example of the electronic module 100 , the electronic module 100 further includes two or more interposer layers, wherein at least one interposer layer carries only one semiconductor package, and at least one interposer layer carries two or more semiconductor packages.

[0033] according to Figure 1 In an example of the electronic module 100 , semiconductor packages are connected to each other to form one or more of a DC / DC circuit, a DC / AC circuit, an AC / DC circuit, a half-bridge circuit, a full-bridge circuit, or a Vienna rectifier circuit.

[0034] according to Figure 1In the example of the electronic module 100 of FIG. 1 , the semiconductor package 10 is a discrete or standardized package. Such a semiconductor package usually contains only a small number of semiconductor dies, for example, 1 or 2 semiconductor dies. Such a semiconductor die can be, for example, two IGBT dies connected in series, or one IGBT die and a diode die connected in parallel.

[0035] according to Figure 1 In the example of the electronic module 100 , the semiconductor package 10 is one or more of a TO package, a TO220 package, a TO247 package, a TO263 package, or a D2PAK package.

[0036] according to Figure 1 In the example of the electronic module 100 , the heat sink 30 includes a first main surface and a second main surface opposite to the first main surface, wherein the semiconductor package is disposed only on one of the first main surface or the second main surface.

[0037] according to Figure 1 In the example of the electronic module 100 , the heat sink 30 includes a first main surface and a second main surface opposite to the first main surface, wherein the semiconductor package is provided on both the first main surface and the second main surface.

[0038] according to Figure 1 In the example of an electronic module 100 of FIG. 1 , the cooling medium is a liquid cooling medium, in particular water. In particular, when the switching power of the module will exceed a certain power threshold, water cooling will be adopted. The power threshold is usually around 100 kW, however, it also depends on the size, structure, and specific application of the specific electronic module.

[0039] according to Figure 1 In the example of the electronic module 100 , the cooling medium is non-conductive.

[0040] according to Figure 1 In the example of the electronic module 100 , the heat sink 30 is one or more of conductive, non-conductive, organic, or inorganic.

[0041] according to Figure 1 In the example of the electronic module 100 , the die carrier 11 is thicker than the interposer layer 20 .

[0042] According to the example of the electronic module 100 , the lower main face of the die carrier is left uncovered by the encapsulation. Figure 1 Such an example is shown in . However, it is also possible that the lower main face of the die carrier is covered by the encapsulation.

[0043] According to the example of the electronic module 100, the electronic module further includes one or more control boards, which include one or more controller chips, which control the electronic circuit constructed by the semiconductor die of the semiconductor package. In particular, the controller chip can be a driver chip that drives the gate of the semiconductor transistor chip.

[0044] According to the example of the electronic module 100, the electronic module also comprises connection means configured to connect the module to external entities. These connection means may be, for example, WiFi modules or USB interfaces, and they may be included in one or more control boards.

[0045] According to an example of the electronic module 100 , the electronic module further comprises an additional encapsulation body, which may be disposed on one or more semiconductor packages.

[0046] Figure 2 include Figure 2 A to Figure 2 D, and shows the assembly of an example of an electronic module, the electronic package including a plurality of semiconductor packages arranged on one side of a fluid heat sink including a control board on the top.

[0047] Figure 2 A shows a perspective view of an intermediate product, which includes a fluid heat sink 230, to which three inner plug-in layers 220 are arranged. The heat sink 230 is composed of a hollow flat rectangular body having two opposite main faces and four side faces connecting the two main faces to each other. The heat sink 230 also includes an inlet port 230A and an outlet port 230B in one of the side faces for a liquid medium (e.g., water) to flow through the heat sink 230. The inlet port 230A and the outlet port 230B can be connected to an external cooling circuit.

[0048] Figure 2 B shows an intermediate product after applying the semiconductor package 210 to the interposer layer 220. The semiconductor package 210 may be of the type, for example, TO220, TO247, TO263, D2PAK, etc. The interposer layers 220 are configured so that one of them is larger than the other two, so that one of them can receive two semiconductor packages 210 on its upper main face, while the other two smaller interposer layers 220 can each receive only one semiconductor package 210. As will be shown later, the semiconductor dies of the semiconductor packages 210 may be interconnected to form an electronic circuit.

[0049] Figure 2 C shows an intermediate product after applying mounting posts 231 at the four corners of the upper major face of the heat sink 230 .

[0050] Figure 2D shows an intermediate product after securing the control board 240 to the mounting posts 231. The control board 240 may include one or more controller chips 241 that control electronic circuits constructed from the semiconductor die of the semiconductor package 210. The control board 240 may be formed, for example, of a printed circuit board (PCB).

[0051] Figure 3 include Figure 3 A to Figure 3 E, and shows the assembly of an example of an electronic module including a plurality of semiconductor packages arranged on two opposing sides of a fluid heat sink including a control board on the top and bottom.

[0052] Figure 3 A and Figure 3 B shows a perspective view from above and below of an intermediate product including a fluid heat sink 330, which is composed of a hollow flat rectangular body having two opposing main faces and four side faces connecting the two main faces to each other. Four inner plug-in layers 320 are arranged on each of the two opposing main faces. The heat sink 330 also includes an inlet port 330A and an outlet port 330B in the opposing side faces for a liquid medium (e.g., water) to flow through the heat sink 330. The inlet port 330A and the outlet port 330B can be connected to an external cooling circuit.

[0053] Figure 3 C and Figure 3 D again shows a perspective view of the intermediate product from above and below, and shows the intermediate product after applying the semiconductor package 310 onto the interposer layer 320. The semiconductor package 310 can be of the type of, for example, TO220, TO247, TO263, D2PAK, etc. On two opposite main faces of the heat sink 330, the interposer layers 320 are configured so that one of them is larger than the other three, so that one of them can receive three semiconductor packages 310 on its upper main face, while the other three smaller interposer layers 320 can receive only one semiconductor package 310 respectively.

[0054] Figure 3 E shows an intermediate product after two control boards 340 are secured to the module, one on each side thereof. Each of the control boards 340 may include one or more controller chips 341 that control the electronic circuitry constructed from the semiconductor die of the semiconductor package 310. Each of the control boards 340 may be formed, for example, from a printed circuit board (PCB).

[0055] Figure 4 include Figure 4 A to Figure 4D, and shows the assembly of an example of an electronic module including a plurality of semiconductor packages arranged on an aluminum fluid heat sink having an embedded isolator.

[0056] Figure 4 A shows a perspective view of an intermediate product including a fluid heat sink 430. The heat sink 430 is composed of a hollow flat rectangular body made of aluminum or an aluminum alloy, and the hollow flat rectangular body has two opposing main faces and four sides connecting the two main faces to each other. The heat sink 430 also includes an inlet port 430A and an outlet port 430B in one of the sides for a liquid medium (e.g., water) to flow through the heat sink 430. The inlet port 430A and the outlet 430B can be connected to an external cooling circuit. On the upper main surface of the heat sink 430, an isolator layer 450 is provided. The isolator layer 450 can be made of a ceramic material, and the isolator layer 450 can be embedded in the upper main surface of the heat sink 430.

[0057] Figure 4 B shows the intermediate product after four interposer layers 420 are disposed on the separator layer 450 .

[0058] Figure 4 C shows an intermediate product after applying the semiconductor package 410 onto the interposer layers 420. The interposer layers 420 may be configured such that one of them is larger than the other three, so that one of them can receive three semiconductor packages 410 on its upper main face, while the other three smaller interposer layers 420 can receive only one semiconductor package 410 each.

[0059] Figure 4 D shows an intermediate product after fixing the control board 440 to the heat sink 430. The control board 440 may include one or more controller chips 441 that control the electronic circuits built by the semiconductor die of the semiconductor package 410. The control board 440 may be formed, for example, of a printed circuit board (PCB).

[0060] Figure 5 include Figure 5 A to Figure 5 D, and shows the assembly of an example of an electronic module comprising a plurality of semiconductor packages arranged on a fluid heat sink including a mounting frame for a control unit and resin casting.

[0061] Figure 5A shows a perspective view from above of an intermediate product including a fluid heat sink 530, which is composed of a hollow flat rectangular body having two opposing main faces and four side faces connecting the two main faces to each other. On the upper main face of the heat sink 530, four interposer layers 520 are arranged. The heat sink 530 also includes an inlet port 530A and an outlet port 530B in the opposing side faces for a liquid medium (e.g., water) to flow through the heat sink 530. The inlet port 530A and the outlet port 530B can be connected to an external cooling circuit.

[0062] Figure 5 B shows a perspective view from above of the intermediate product, and shows the intermediate product after applying the semiconductor package 510 onto the interposer layer 520. The semiconductor package 510 may be of the type of, for example, TO247, TO247PLUS, D2PAK, etc. The interposer layers 520 are configured such that one of them is larger than the other three, so that one of them can receive three semiconductor packages 510 on its upper main face, while the other three smaller interposer layers 520 can receive only one semiconductor package 510, respectively.

[0063] Figure 5 C shows an intermediate product after attaching the mounting frame 560 to the module. The mounting frame 560 comprises a rectangular ring shape consisting of four frame bars extending along four edges of the upper surface of the heat sink 530. The mounting frame 560 also comprises four mounting posts 560.1 disposed on the four edges of the mounting frame 560.

[0064] Before the next step of mounting the control board 540 , the internal volume of the module may be filled with an encapsulation, such as a resin, in particular epoxy or silicone, for improving the electrical insulation and, if necessary, increasing its reliability.

[0065] Figure 5 D shows the intermediate product after securing the control board 540 to the mounting posts 560.1. The control board 540 may include one or more controller chips 541 that control the electronic circuits constructed from the semiconductor die of the semiconductor package 510. The control board 540 may be formed, for example, from a printed circuit board (PCB).

[0066] Figure 6 include Figure 6 A to Figure 6 D, and shows the fabrication of an assembly of a plurality of electronic modules, each of which includes a plurality of semiconductor packages arranged on one side of a fluid heat sink, the assembly including a control board on the top.

[0067] Figure 6A shows a perspective view of an intermediate product including a fluid heat sink 630, to which three interposer layers 620 are disposed. The heat sink 630 is composed of a hollow flat rectangular body having two opposing main faces and four side faces connecting the two main faces to each other. The heat sink 630 also includes an inlet port 630A and an outlet port 630B in one of the side faces for a liquid medium (e.g., water) to flow through the heat sink 630. The inlet port 630A and the outlet port 630B can be connected to an external cooling circuit.

[0068] Figure 6 B shows a perspective view from below of the intermediate product.

[0069] Figure 6 C shows a perspective view from above of the intermediate product, which includes three Figure 6 A and Figure 6 B, the intermediate products are connected together laterally with equal orientation so that the inlet port 630A and the outlet port 630B are all located on one of the sides of the assembly. Before connecting the three intermediate products together, the semiconductor package 610 is applied to the interposer layer 620 of all the heat sinks 630.

[0070] Figure 6 D shows the electronic module after securing a control board 640 to the assembly. The control board 640 may include one or more controller chips 641 that control the electronic circuits built from the semiconductor die of the semiconductor package 610. The control board 640 may be formed, for example, from a printed circuit board (PCB).

[0071] Figure 7 include Figure 7 A to Figure 7 C, and again shows Figure 2 C's electronic module (A) and two possible circuit configurations that can be implemented with the electronic module, namely a 1-phase full-bridge circuit (B) and a 3-level Vienna circuit (C).

[0072] Figure 7 A corresponds to Figure 2 C and shows an intermediate product after applying mounting posts 231 at four corners of the upper main surface of the heat sink 230. The intermediate product is configured so that two semiconductor packages 210 are disposed on one of the interposer layers 220, and the other two semiconductor packages 210 are each disposed on only one interposer layer 220.

[0073] Figure 7 B shows that Figure 7The intermediate product shown in A realizes a 1-phase full-bridge circuit. In this case, the full-bridge circuit includes four IGBT or MOSFET transistors corresponding to four semiconductor packages 210 disposed on the interposer layer 220 .

[0074] Figure 7 C shows that it can be replaced by Figure 7 The 3-level Vienna circuit is realized by the intermediate product shown in A. In this case, the Vienna circuit includes two IGBT or MOSFET transistors and two diodes corresponding to four semiconductor packages 210 disposed on the interposer layer 220 .

[0075] For example, you can use Figure 2 Another example of a circuit topology implemented by the intermediate product shown in A is the so-called mid-point clamp (NPC) structure, a typical version of which also contains four IGBT transistors.

[0076] Example 1 is an electronic module, comprising a semiconductor package, the semiconductor package comprising a core carrier; a semiconductor core disposed on the core carrier; at least one electrical conductor connected to the semiconductor core; and an encapsulation covering the core carrier, the semiconductor core and the electrical conductor, such that a portion of the electrical conductor extends to the outside of the encapsulation; an interposer layer, wherein the semiconductor package is disposed on the interposer layer; and a heat sink, through which a cooling medium can flow, wherein the interposer layer (20) is disposed on the heat sink.

[0077] In Example 2, the subject matter of Example 1 can optionally further include the die carrier being one of a part of a lead frame, an isolated metal substrate (IMS), a direct copper bond (DCB), or an active metal braze (AMB).

[0078] In Example 3, the subject matter of Example 1 or 2 can optionally further include that the interposer layer is one of an isolated metal substrate (IMS), a direct copper bond (DCB), or an active metal braze (AMB).

[0079] In Example 4, the subject matter of any of the preceding examples can optionally further include the interposer layer being embedded in the upper major surface of the heat sink.

[0080] In Example 5, the subject matter of any of the preceding examples can optionally further include the interposer layer being soldered, diffusion soldered, or sintered to the heat sink, or connected to the heat sink by using glue, conductive glue, or silver glue.

[0081] In Example 6, the subject matter according to any of the preceding examples may optionally further include the semiconductor package being soldered, diffusion soldered, or sintered to the interposer layer, or connected to the interposer layer by using a conductive glue, particularly a silver conductive glue.

[0082] In Example 7, the subject matter of any of the preceding examples can optionally further include the semiconductor die being one or more of a wide bandgap semiconductor die, a SiC die, or a GaN die.

[0083] In Example 8, the subject matter described in any of the preceding examples may optionally further include that the semiconductor die is one or more of a semiconductor transistor die, a power semiconductor transistor die, a power IGBT die, a power MOSFET die, a semiconductor diode die, or a semiconductor thyristor die.

[0084] In Example 9, the subject matter of any of the preceding examples can optionally further include two or more semiconductor packages.

[0085] In Example 10, the subject matter of any of the preceding examples may optionally further include two or more interposer layers, wherein at least one interposer layer carries only one semiconductor package and at least one interposer layer carries two or more semiconductor packages.

[0086] In Example 11, the subject matter described in any of the preceding examples may optionally further include semiconductor packages connected to each other to form one or more of a DC / DC circuit, a DC / AC circuit, an AC / DC circuit, a half-bridge circuit, a full-bridge circuit, or a Vienna rectifier circuit.

[0087] In Example 12, the subject matter of any of the preceding examples may optionally further include the semiconductor die being one or more of a discrete or standardized package, a discrete or standardized power package, a TO package, a TO220 package, a TO247 package, a TO263 package, or a D2PAK package.

[0088] In Example 13, the subject matter of any of the preceding examples may optionally further include the heat sink comprising a first main surface and a second main surface opposite to the first main surface, wherein the semiconductor package is disposed on both the first main surface and the second main surface.

[0089] In Example 14, the subject matter of any of the preceding examples can optionally further include the cooling medium being electrically non-conductive.

[0090] In Example 15, the subject matter of any of the preceding examples can optionally further include the heat sink being one or more of conductive, non-conductive, organic, or inorganic.

[0091] In Example 16, the subject matter of any of the preceding examples can optionally further include the die carrier being thicker than the interposer layer.

[0092] In Example 17, the subject matter according to any of the preceding examples may optionally further include that the inner volume of the module is filled with a further encapsulant, such as a resin, in particular an epoxy resin or a silicone resin.

[0093] In Example 18, the subject matter of any of the preceding examples may optionally further include a control board including one or more controller chips that control electronic circuits constructed from the semiconductor die of the semiconductor package.

[0094] In Example 19, the subject matter of any of the preceding examples may optionally further include a connection device configured to connect the module to an external entity.

[0095] In addition, although specific features or aspects of embodiments of the present disclosure may have been disclosed with respect to only one of several embodiments, such features or aspects may be combined with one or more other features or aspects of other embodiments, as may be desirable and advantageous for any given or specific application. In addition, to the extent that the terms "including," "having," "with," or other variations thereof are used in specific embodiments or claims, these terms are intended to be inclusive in a manner similar to the term "including." In addition, it should be understood that embodiments of the present disclosure may be implemented in discrete circuits, partially integrated circuits, or fully integrated circuits or programming devices. In addition, the term "exemplary" is intended to be exemplary only, not optimal or optimum. It should also be understood that, for simplicity and ease of understanding, the features and / or elements depicted herein are shown in specific sizes relative to each other, and the actual sizes may be substantially different from the sizes shown herein.

[0096] Although specific embodiments have been shown and described herein, it will be appreciated by those skilled in the art that various alternatives and / or equivalent implementations may replace the specific embodiments shown and described without departing from the scope of the present disclosure. This application is intended to cover any modifications or variations of the specific embodiments discussed herein. Therefore, the present disclosure is limited only by the claims and their equivalents.

Claims

1. An electronic module (100), comprising: - A semiconductor package (10), the semiconductor package (10) comprising - a die carrier (11); - a semiconductor die (12) arranged on the die carrier (11); - at least one electrical conductor (13) connected to the semiconductor die (12); as well as an encapsulation (14), the encapsulation (14) covering the die carrier (11), the semiconductor die (12), and the electrical conductor (13), such that a portion of the electrical conductor (13) extends outside the encapsulation (14); - an interposer layer (20), wherein the semiconductor package (10) is arranged on the interposer layer (20); a heat sink (30) through which a cooling medium can flow, wherein the interposer layer (20) is arranged on the heat sink (30); and - an isolator layer made of a ceramic material and embedded in the upper main face of the heat sink, Wherein, the inner plug-in layer (20) is embedded in the upper main surface of the heat sink (30).

2. The electronic module (100) according to claim 1, wherein: The die carrier (11) is one of a portion of a lead frame, an isolated metal substrate (IMS), a direct copper bond (DCB), or an active metal braze (AMB).

3. The electronic module (100) according to claim 1, wherein: The interposer layer (20) is one of an isolated metal substrate (IMS), a direct copper bond (DCB), or an active metal brazing (AMB).

4. The electronic module (100) according to claim 1, wherein: The interposer layer (20) is soldered, diffusion soldered, or sintered to the heat sink (30), or connected to the heat sink (30) by using glue, conductive glue, or silver glue.

5. The electronic module (100) according to claim 1, wherein: The semiconductor package (10) is soldered, diffusion-bonded, or sintered to the interposer layer (20), or connected to the interposer layer (20) by using a conductive adhesive.

6. The electronic module (100) according to claim 5, wherein: The conductive glue comprises silver conductive glue.

7. The electronic module (100) according to any one of claims 1 to 6, wherein: The semiconductor die (12) is one or more of a wide bandgap semiconductor die, a SiC die, or a GaN die.

8. The electronic module (100) according to any one of claims 1 to 6, wherein: The semiconductor die (12) is one or more of a semiconductor transistor die, a power semiconductor transistor die, a power IGBT die, a power MOSFET die, a semiconductor diode die, or a semiconductor thyristor die.

9. The electronic module (100) according to any one of claims 1 to 6, further comprising: Two or more semiconductor packages.

10. The electronic module (100) according to any one of claims 1 to 6, further comprising: Two or more interposer layers, wherein At least one interposer layer carries only one semiconductor package, and At least one interposer layer carries two or more semiconductor packages.

11. The electronic module (100) according to claim 9, wherein: The semiconductor packages are connected to each other to form one or more of a DC / DC circuit, a DC / AC circuit, an AC / DC circuit, a half-bridge circuit, a full-bridge circuit, or a Vienna rectifier circuit.

12. The electronic module (100) according to any one of claims 1 to 6 and 11, wherein: The semiconductor package (10) is one or more of a discrete or standardized package, a discrete or standardized power package, a TO package, a TO220 package, a TO247 package, a TO263 package, or a D2PAK package.

13. The electronic module (100) according to any one of claims 1 to 6 and 11, wherein: The heat sink (30) includes a first main surface and a second main surface opposite to the first main surface, wherein the semiconductor package is provided on both the first main surface and the second main surface.

14. The electronic module (100) according to any one of claims 1 to 6 and 11, wherein: The cooling medium is electrically non-conductive.

15. The electronic module (100) according to any one of claims 1 to 6 and 11, wherein: The heat sink (30) is one or more of conductive, non-conductive, organic or inorganic.

16. The electronic module (100) according to any one of claims 1 to 6 and 11, wherein: The die carrier (11) is thicker than the interposer layer (20).

17. The electronic module (100) according to any one of claims 1 to 6 and 11, wherein: The inner volume of the module is filled with a further encapsulation, which is a resin.

18. The electronic module (100) according to claim 17, wherein: The resin includes epoxy resin or silicone resin.

19. The electronic module (100) according to any one of claims 1 to 6, 11 and 18, further comprising: A control board includes one or more controller chips that control electronic circuits constructed from the semiconductor die of the semiconductor package.

20. The electronic module (100) according to any one of claims 1-6, 11 and 18, further comprising: A connection device configured to connect the module to an external entity.

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