Plasma processing device, cleaning method and mounting table

Abstract

The present invention provides a mounting platform, a plasma processing apparatus, and a cleaning method that prevent adhesive consumption and abnormal discharge. The mounting platform includes: a mounting portion disposed in a plasma space and configured to mount a substrate; an adhesive layer bonding the mounting portion to a base; a through-hole extending through the mounting portion, the base, and the adhesive layer for supplying a heat transfer gas; and a sleeve member having a surface having a plurality of fine holes connecting the through-holes to the plasma space, the surface being disposed within the through-holes and above the adhesive layer.

Description

Technical Field

[0001] The present invention relates to a mounting table, a plasma processing device and a cleaning processing method. Background Art

[0002] Patent Document 1 discloses a mounting platform comprising an electrostatic chuck, a base, and a cylindrical sleeve. A first through-hole is formed in the electrostatic chuck. The base is bonded to the back of the electrostatic chuck via a first adhesive layer, and a second through-hole is formed in the base, communicating with the first through-hole.

[0003] <Prior Art Literature>

[0004] <Patent Document>

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2016-28448 Summary of the Invention

[0006] <Problems to be Solved by the Invention>

[0007] The present invention provides a mounting table, a plasma processing device and a cleaning method capable of preventing consumption of an adhesive and abnormal discharge.

[0008] <Methods used to solve the problem>

[0009] According to one embodiment of the present invention, there is provided a loading platform, comprising: a loading portion, which is arranged in a plasma space and is used to load a substrate; an adhesive layer, which bonds the loading portion and the base; a through hole, which passes through the loading portion, the base and the adhesive layer and is used to supply a heat transfer gas; and a sleeve part, which has a surface provided with a plurality of fine holes for connecting the through hole and the plasma space, and is arranged in such a manner that the surface is located above the adhesive layer inside the through hole.

[0010] <Effects of the Invention>

[0011] According to one aspect, it is possible to prevent the adhesive from being consumed and to prevent abnormal discharge. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 This is a schematic cross-sectional view showing a mounting table according to the embodiment.

[0013] Figure 2 This is a diagram showing the invasion of plasma into the through-hole of the mounting table in a comparative example.

[0014] Figure 3 This is a diagram showing a sleeve member provided in a through-hole of a mounting table according to an embodiment.

[0015] Figure 4It is a diagram showing a modified example of the sleeve member provided in the through-hole of the mounting table according to the embodiment.

[0016] Figure 5 This is a schematic cross-sectional view showing a plasma processing apparatus according to an embodiment.

[0017] Figure 6 1 is a flowchart illustrating a cleaning method according to an embodiment. DETAILED DESCRIPTION

[0018] Hereinafter, the embodiment of the present invention will be described with reference to the accompanying drawings. In each of the drawings, the same components are given the same reference numerals, and overlapping descriptions may be omitted.

[0019] (Place)

[0020] Figure 1 This is a schematic cross-sectional view of a mounting table ST mounted in a plasma processing apparatus according to an embodiment. The mounting table ST is formed within an airtight chamber and is used to mount a substrate, such as a wafer. The mounting table ST includes an electrostatic chuck 5, a first plate 4, and a second plate 6.

[0021] The first plate 4 and the second plate 6 are made of a conductive component, for example, aluminum. The electrostatic chuck 5 is made of ceramics such as silicon carbide (SiC). The second plate 6 and the first plate 4 are bases for supporting the electrostatic chuck 5, and the substrate is placed on the electrostatic chuck 5. The electrostatic chuck 5 is arranged in the plasma space within the chamber and is an example of a mounting portion for placing a substrate. The first plate 4 and / or the second plate 6 is an example of a base for supporting the mounting portion. In the present embodiment, the first plate 4 and the second plate 6 are separate entities, but may also be integrated.

[0022] The electrostatic chuck 5, the first plate 4, and the second plate 6 are formed into a generally cylindrical shape centered on the central axis O. The first plate 4 and the second plate 6 have the same diameter. The electrostatic chuck 5 has a smaller diameter than the first plate 4 and the second plate 6. The upper surface of the electrostatic chuck 5 is a substrate mounting surface 5a for mounting a substrate. The upper surface of the first plate 4 on the outer periphery of the electrostatic chuck 5 is an edge ring mounting surface 4a for mounting an edge ring. An adhesive layer 21 is provided between the lower surface of the electrostatic chuck 5 and the upper surface of the first plate 4 for bonding the electrostatic chuck 5 and the first plate 4.

[0023] Inside the mounting table ST, a through hole 16 for supplying heat transfer gas and a common gas supply path 17 are formed. The common gas supply path 17 is the space between the lower surface of the first plate 4 and the upper surface of the second plate 6. The common gas supply path 17 is defined by an O-ring 40 provided near the end of the space between the lower surface of the first plate 4 and the upper surface of the second plate 6.

[0024] Through-hole 16 penetrates electrostatic chuck 5, adhesive layer 21, and first plate 4, communicates with common gas supply line 17, and further penetrates second plate 6 thereunder for supplying helium (He), an example of a heat transfer gas. Through-hole 16 includes a portion vertically penetrating electrostatic chuck 5 as through-hole 16a, a portion vertically penetrating first plate 4 as through-hole 16b, and a portion vertically penetrating second plate 6 as through-hole 16c.

[0025] The through hole 16b is located below the through hole 16a and is vertically connected to the through hole 16a. The through hole 16a opens at the substrate mounting surface 5a of the electrostatic chuck 5. The through hole 16b is connected to the through hole 16c via the common gas supply path 17. In the present embodiment, the through hole 16b and the through hole 16c are misaligned and not vertically connected. However, the present invention is not limited thereto, and the through hole 16c may be located below the through hole 16b, so that the through hole 16c is vertically connected to the through hole 16b. The diameters of the through hole 16a, the through hole 16b, and the through hole 16c are the same. However, the present invention is not limited thereto, and the diameters of the through holes may be the same or different.

[0026] Helium gas passes through through-hole 16c and common gas supply line 17, then through through-hole 16b and through-hole 16a, where it is introduced into the plasma space (processing space) above substrate mounting surface 5a of electrostatic chuck 5. At this time, O-ring 40 is used to prevent helium gas from leaking into the plasma space. Furthermore, O-ring 40 serves to isolate the vacuum processing space from the atmosphere.

[0027] While substrates are being processed within the chamber, a cleaning process is performed periodically or irregularly to maintain the chamber conditions for each substrate. Waferless dry cleaning (hereinafter also referred to as "WLDC") is known as a cleaning process. This process generates a plasma of a cleaning gas without placing a substrate on the substrate mounting surface 5a, thereby removing reaction products and the like adhering to the outer periphery and other portions of the electrostatic chuck 5.

[0028] Figure 2 FIG. 1 is a diagram showing the plasma intrusion into the through hole 16 for supplying heat transfer gas provided on the mounting table in a comparative example. In the case of WLDC, since the substrate is not mounted on the substrate mounting surface 5a, Figure 2 As shown in FIG. 1 , the plasma P in the plasma space penetrates into the through hole 16. As a result, the adhesive in the through hole 16, especially the adhesive layer 21 fixing the electrostatic chuck 5 to the first plate 4, is damaged. If the adhesive is continuously exposed to the plasma, as shown in FIG. Figure 2As shown in the frame A of FIG, the adhesive is eroded. In the eroded portion of the adhesive, a space is created between the electrostatic chuck 5 and the first plate 4, hindering heat transfer. As a result, the temperature controllability of the substrate deteriorates.

[0029] So, if Figure 1 As shown, in the mounting table ST of this embodiment, a sleeve member 20 having multiple micropores 20a is press-fitted or bonded into the through-hole 16a. Helium gas then flows from the through-holes 16a into the plasma space above the substrate mounting surface 5a. This prevents plasma from entering the through-hole 16, thereby preventing erosion of the adhesive. Furthermore, by machining the micropores 20a to a diameter of 100 μm or less, abnormal plasma-induced discharge can be prevented. Furthermore, the micropores 20a ensure electrical conductivity when the helium gas is ejected into the plasma space.

[0030] (Sleeve parts)

[0031] Next, refer to Figure 1 B shows an enlarged view of Figure 3 , the structure of the sleeve component 20 is described. Figure 3 This is a diagram showing the sleeve member 20 provided in the through-hole 16 of the mounting table ST according to the embodiment. Figure 3 (a) is a longitudinal sectional view of the sleeve member 20 and its surroundings arranged in the through hole 16 of the mounting table ST according to the embodiment. Figure 3 (b) is a perspective view of the sleeve member 20 according to the embodiment.

[0032] The sleeve member 20 is provided inside the through hole 16 in a manner to block the opening of the through hole 16, and a plurality of microscopic holes 20a for connecting the through hole 16 and the plasma space are opened on the upper surface 20a1 of the sleeve member 20. The upper surface 20a1 is located above the adhesive layer 21 inside the through hole 16a. Figure 3 As shown in (b), the sleeve member 20 is a lid-like member with a space 20e and multiple micropores 20a inside. The sleeve member 20 has a centrally protruding structure and, from top to bottom, comprises a disc-shaped first portion 20b, an annular second portion 20c, and an annular third portion 20d. The space 20e within the first portion 20b communicates with the multiple micropores 20a extending through the upper surface 20a1 of the sleeve member 20 within the first portion 20b.

[0033] The sleeve member 20 may be made of silicon carbide or ceramics. In particular, since the upper surface 20a1 of the first portion 20b for forming the fine hole 20a is directly exposed to plasma, it is preferable to use a conductive material such as silicon carbide having plasma resistance.

[0034] The diameter of the micropore 20a is, for example, in the range of 50 μm to 100 μm. According to Paschen's law, if the diameter of the micropore 20a is 100 μm or less, it is possible to suppress the intrusion of plasma into the through-hole 16a.

[0035] In this embodiment, multiple micropores 20a are formed in a direction perpendicular to the direction in which through-holes 16a are formed. This ensures electrical conductivity when helium gas is introduced into the plasma space, prevents plasma from entering through-holes 16a, and prevents abnormal discharge from occurring in through-holes 16a. This prevents plasma erosion of the adhesive in adhesive layer 21 and protects sleeve member 20 and surrounding structures from damage caused by abnormal discharge. This maintains the performance of surrounding structures such as sleeve member 20 and electrostatic chuck 5, extending their lifespan.

[0036] In particular, a high-frequency current is applied to the mounting table ST from a high-frequency power supply. This high-frequency current flows from the first plate 4, which is a conductive member, through the plasma P to the chamber, which is at ground potential. At this time, by providing a sleeve member 20 in the through-hole 16 through which the helium gas flows, the multiple micropores 20a of the sleeve member 20 can increase the spatial distance.

[0037] Furthermore, the plasma space into which helium is introduced through the plurality of micropores 20a is a vacuum space. In other words, the helium is introduced into a vacuum region. If the helium is caused to flow from a space with higher pressure to a space with lower pressure, abnormal discharges are more likely to occur in the higher-pressure space. In the mounting platform ST of this embodiment, the micropores 20a of the sleeve member 20 are positioned in the portion where the helium is introduced, where this abnormal discharge is more likely to occur, forming a flow path for the helium gas. By lengthening the spatial distance through which the helium gas flows, the accelerating force due to the electric field is reduced, thereby suppressing the occurrence of abnormal discharges.

[0038] Furthermore, by flowing helium gas from the plurality of micropores 20a into the plasma space, the pressure inside the micropores 20a can be set to a higher pressure than that in the plasma space. This can more effectively suppress the intrusion of plasma from the micropores 20a into the through-holes 16a, and as a result, can more effectively prevent the erosion of the adhesive in the adhesive layer 21.

[0039] The diameter of the second portion 20c is larger than the diameters of the first portion 20b, the third portion 20d, and the through-hole 16b. A step corresponding to the difference in diameter between the first portion 20b and the second portion 20c is provided within the through-hole 16a. This allows the sleeve member 20 to be positioned by securing the second portion 20c to the upper surface of the through-hole 16b when the sleeve member 20 is pressed or engaged within the through-hole 16a.

[0040] The diameter of the third portion 20d is smaller than the diameter of the through hole 16b. Figure 3 The width of gap G shown in (a) is 0. This prevents friction between sleeve member 20 and first plate 4 caused by differential thermal expansion due to the heat input from the plasma, which is caused by the difference in linear expansion coefficients between the materials of electrostatic chuck 5 and first plate 4. Furthermore, by arranging third portion 20d within through-hole 16b, adhesive layer 21 is not visible from the plasma space. This more effectively prevents erosion of the adhesive in adhesive layer 21.

[0041] It should be noted that the substrate mounting surface 5a of the electrostatic chuck 5 is provided with dot-shaped projections and depressions. The upper surface 20a1 of the sleeve member 20 is preferably located at any height between the bottom of the concave portion and the top of the convex portion of the dot-shaped projection and depression. However, the substrate mounting surface 5a may be flat, rather than having dot-shaped projections and depressions. In this case, the upper surface 20a1 of the sleeve member 20 is preferably located at approximately the same height as the substrate mounting surface 5a. This can more effectively suppress the concentration of the plasma electric field and more effectively prevent the occurrence of abnormal discharges.

[0042] (Variation)

[0043] Next, refer to Figure 4 A sleeve member 20 according to a modified example will be described. Figure 4 It is a diagram showing a modified example of the sleeve member 20 provided in the through hole 16 . Figure 4 (a) is a longitudinal sectional view of a sleeve member 20 and its surroundings according to a modified example. Figure 4 (b) is a perspective view of the sleeve member 20 of the modified example.

[0044] The sleeve member 20 of the modified example and Figure 3 The sleeve member 20 of the illustrated embodiment has substantially the same structure. The difference is that, in the modified example, the microscopic hole 20a of the sleeve member 20 is formed in the horizontal direction. Therefore, the following description will focus on the microscopic hole 20a of the sleeve member 20, and the description of the other structures of the sleeve member 20 will be omitted.

[0045] The plurality of fine holes 20a of the embodiment are formed in the vertical direction on the upper surface of the sleeve member 20, as shown in FIG. Figure 4 As shown in (a) and (b) of FIG. 1 , in this modification, multiple micropores 20a extend horizontally through first portion 20b and open onto side surface 20b1 of first portion 20b. In this modification, sleeve member 20 is also configured so that side surface 20b1 is located above the adhesive layer within through-hole 16a. Furthermore, a space communicating with the plasma space exists between side surface 20b1 of the sleeve member, where multiple micropores 20a open, and the opposing surface of electrostatic chuck 5.

[0046] In the modified stage ST, a sleeve member 20 is positioned at the opening of the through-hole 16a, which is prone to abnormal discharge. Furthermore, in the modified stage ST, by providing multiple micropores 20a in the horizontal direction, not only does the spatial distance of the potential difference increase, but the flow path of the helium gas flowing vertically through the through-holes 16a and 16b is bent horizontally as it passes through the multiple micropores 20a. This shortens the straight-line distance of electrons within the helium gas flow path, resulting in insufficient space for electron acceleration, thereby suppressing abnormal discharge. Furthermore, the openings of the micropores 20a are located in a position hidden from the plasma space. This further avoids plasma-induced electric field concentration, further suppressing abnormal discharge.

[0047] However, the plurality of micropores 20a are not limited to being formed in the horizontal direction. The plurality of micropores 20a may also be formed obliquely in the first portion 20b. This shortens the straight-line distance of electrons in the helium gas flow path, further suppressing abnormal discharge.

[0048] In addition, with Figure 3 Similarly, the sleeve member 20 of the illustrated embodiment is provided with a plurality of micropores 20a, which ensures electrical conductivity when helium gas is supplied to the plasma space, preventing plasma intrusion and abnormal discharge. This prevents plasma-induced erosion of the adhesive in the adhesive layer 21 and damage to the sleeve member 20 and surrounding structures due to abnormal discharge, thereby maintaining the performance of the sleeve member 20 and extending its life.

[0049] (Plasma processing device)

[0050] Next, refer to Figure 5 An example of a plasma processing apparatus 100 in which the mounting stage ST according to the embodiment or the mounting stage ST according to the modified example is mounted will be described. Figure 5 1 is a schematic cross-sectional view showing a plasma processing apparatus 100 according to an embodiment.

[0051] The plasma processing apparatus 100 is airtight and has a chamber 1 with an electrical ground potential. The chamber 1 is cylindrical and made of, for example, aluminum. A mounting table ST for mounting a substrate W is provided in the chamber 1. The mounting table ST may be Figure 3 The mounting table ST of the embodiment may also be Figure 4 A modified example of the mounting table ST.

[0052] An edge ring 7, made of, for example, silicon, is provided around the substrate W. The edge ring 7 is also referred to as a focus ring. A cylindrical inner wall member 9a, made of, for example, quartz, is provided around the edge ring 7, the first plate 4, and the second plate 6. The stage ST is positioned at the bottom of the chamber 1 via the inner wall member 9a and a support member 9, made of, for example, quartz, connected to the lower end of the inner wall member 9a.

[0053] The electrode 5c in the electrostatic chuck 5 is sandwiched between dielectrics 5b and connected to a power source 12. When a voltage is applied to the electrode 5c from the power source 12, the substrate W is electrostatically attracted to the electrostatic chuck 5 by the Coulomb force.

[0054] The first plate 4 has a flow path 2d inside. The heat exchange medium supplied from the cooling unit, such as water, circulates in the inlet pipe 2b, the flow path 2d and the outlet pipe 2c. A through hole 16 and a common gas supply path 17 are formed inside the mounting table ST. The heat transfer gas supply source 19 supplies the heat transfer gas to the through hole 16 and the common gas supply path 17, thereby introducing the heat transfer gas into the space between the lower surface of the substrate W and the substrate mounting surface 5a of the electrostatic chuck 5. It should be noted that in the embodiment and the modified example, the example of introducing helium is given for explanation, but the introduced heat transfer gas is not limited to helium, and can also be an inert gas such as argon (Ar). It should be noted that not only heat transfer gas but also gas used in the process can be applied. As an example of a gas used in the process, oxygen (O2) and nitrogen (N2) can be given.

[0055] It should be noted that a plurality of, for example, three, lift pins pass through the mounting table ST. A pin insertion path is provided in the mounting table ST, and the lift pins inserted through the pin insertion path move up and down under the action of the lifting mechanism.

[0056] The second plate 6 is connected to the first high-frequency power supply 10a via the first integrator 11a, and to the second high-frequency power supply 10b via the second integrator 11b. The first high-frequency power supply 10a applies high-frequency power of a first frequency for plasma generation to the second plate 6. The second high-frequency power supply 10b applies high-frequency power of a second frequency, different from the first frequency, to the second plate 6 for bias voltage for ion introduction. However, the high-frequency power supplied by the second high-frequency power supply 10b is sometimes also used for plasma generation. An upper electrode 3 is provided above the stage ST, facing the stage ST. The upper electrode 3 functions as a gas shower.

[0057] The upper electrode 3 includes an electrode plate 3b and a top plate 3a. An insulating ring member 95 is provided around the upper electrode 3 to support the upper electrode 3. The upper opening of the chamber 1 is sealed by the upper electrode 3 and the ring member 95. The top plate 3a is made of a conductive material, such as anodized aluminum, and detachably supports the electrode plate 3b at its lower portion.

[0058] The top plate 3a includes a gas diffusion chamber 3c and a gas inlet 3g for introducing a process gas into the gas diffusion chamber 3c. A gas supply pipe 15a is connected to the gas inlet 3g. A gas supply unit 15, a mass flow controller (MFC) 15b, and an on-off valve V2 are sequentially connected to the gas supply pipe 15a. The process gas is supplied from the gas supply unit 15 to the upper electrode 3 via the gas supply pipe 15a. The on-off valve V2 and the mass flow controller (MFC) 15b control the on / off flow and flow rate of the gas.

[0059] A plurality of gas flow holes 3d are formed in the lower portion of the gas diffusion chamber 3c, facing into the chamber 1. These holes communicate with the gas inlet holes 3e of the electrode plate 3b. Process gas flows through the gas diffusion chamber 3c and the gas flow holes 3d, and is then supplied into the chamber 1 from the gas inlet holes 3e in a shower-like manner.

[0060] The upper electrode 3 is connected to a variable DC power supply 72 via a low-pass filter (LPF) 71. The DC voltage output from the variable DC power supply 72 is turned on and off by a power supply switch 73. The DC voltage from the variable DC power supply 72 and the turning on and off of the switch 73 are controlled by a control unit 90. When high-frequency power is applied to the mounting stage ST from the first and second high-frequency power supplies 10a and 10b to form a plasma of the process gas, the switch 73 is turned on by the control unit 90 as needed, thereby applying a desired DC voltage to the upper electrode 3.

[0061] A cylindrical ground conductor 1a is provided on the side wall of the chamber 1 so as to extend to a position above the height of the upper electrode 3. The cylindrical ground conductor 1a has a ceiling at its upper portion.

[0062] An exhaust port 81 is formed at the bottom of the chamber 1 and is connected to an exhaust device 83 via an exhaust pipe 82. The exhaust device 83 includes a vacuum pump, and by operating the vacuum pump, the pressure inside the chamber 1 is reduced to a predetermined vacuum level. A substrate W loading / unloading port 84 is provided on a side wall of the chamber 1. The loading / unloading port 84 can be opened and closed by a gate valve 85.

[0063] A sediment shield 86 is installed along the inner wall surface of the chamber 1. Sediment shields 87 are also removably installed along the inner wall member 9a. Sediment shields 86 and 87 prevent etching byproducts (sediments) from adhering to the inner wall of the chamber 1 and the inner wall member 9a. A conductive member (GND block) 89, connected to a ground capable of controlling its potential relative to ground, is installed at approximately the same height as the substrate W on sediment shield 86 to prevent abnormal discharge.

[0064] The plasma processing apparatus 100 is generally controlled by a control unit 90. The control unit 90 includes a process controller 91 for controlling various components of the plasma processing apparatus 100, a user interface 92, and a storage unit 93.

[0065] The user interface 92 includes a keyboard for a process manager to input commands for managing the plasma processing apparatus 100 , a display for visually displaying the operating status of the plasma processing apparatus 100 , and the like.

[0066] The storage unit 93 stores a recipe that stores control programs (software) and processing condition data for causing the process controller 91 to execute various processes executed by the plasma processing apparatus 100. Furthermore, as needed, an arbitrary control program is called from the storage unit 93 by instructions from the user interface 92 or the like, and the process controller 91 is caused to execute the program, thereby performing the desired process in the plasma processing apparatus 100 under the control of the process controller 91. Alternatively, the recipe for the control program, processing condition data, etc. may be stored in a computer-readable computer storage medium or the like, or may be transmitted from another device, such as via a dedicated line, so that it can be used online at any time. Examples of storage media include hard disks, CDs, floppy disks, and semiconductor memories.

[0067] (Cleaning method)

[0068] Finally, for a cleaning method performed in the plasma processing apparatus 100 having the mounting table ST of the embodiment or the mounting table ST of the modification, refer to Figure 6 Provide explanation. Figure 6 1 is a flowchart illustrating a cleaning method according to an embodiment of the present invention. The cleaning method according to the embodiment of the present invention is controlled by the control unit 90 and executed in the plasma processing apparatus 100 .

[0069] like Figure 6To begin the formal treatment, helium gas is supplied from the heat transfer gas supply source 19 to the through-hole 16, and helium gas is introduced into the plasma space through the plurality of micropores 20a (step S1). Next, a cleaning gas is supplied into the chamber 1, and a plasma of the cleaning gas is generated under the action of high-frequency power of the first and / or second frequencies (step S2). Next, a cleaning process is performed under the action of the generated cleaning gas plasma (step S3), removing reaction products adhering to the chamber 1, and the formal treatment is concluded.

[0070] According to the cleaning method of the embodiment described above, WLDC is performed without placing the substrate on the substrate mounting surface 5a. In this case, the substrate mounting surface 5a is exposed to plasma, and helium gas is ejected from the plurality of micropores 20a of the sleeve member 20, thereby preventing the plasma of the cleaning gas from entering the through-hole 16. This prevents the consumption of the adhesive in the adhesive layer 21 and prevents abnormal discharge.

[0071] While the mounting platform, plasma processing apparatus, and cleaning method have been described above using the aforementioned embodiments, the mounting platform, plasma processing apparatus, and cleaning method of the present invention are not limited to the aforementioned embodiments. Various modifications and improvements are possible within the scope of the present invention. The matters described in the aforementioned embodiments and modifications may be combined within the scope of non-inconsistency.

[0072] For example, the mounting table of the above-mentioned embodiment and modified examples has an electrostatic chuck, but the present invention is not limited thereto. For example, a mounting table without an electrostatic chuck may be used. In this case, the mounting portion of the mounting table does not function as an electrostatic chuck, and the substrate is mounted on the upper surface of the mounting portion.

[0073] The plasma processing apparatus of the present invention can be applied to any of the following types: Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Radial Line Slot Antenna, Electron Cyclotron Resonance Plasma (ECR), and Helicon Wave Plasma (HWP). The cleaning method of the present invention can be performed in such a plasma processing apparatus, which includes: a chamber having a plasma space; a mounting platform disposed within the plasma space; and a plasma generating unit configured to generate plasma from a gas supplied to the plasma space.

Claims

1. A loading platform, comprising: a base station disposed in the plasma processing space; a placing portion for placing a substrate on an upper surface of the placing portion and arranged on the base; an adhesive layer for bonding the mounting portion and the base; a through hole penetrating the mounting portion, the base, and the adhesive layer for supplying a heat transfer gas; and a sleeve component disposed inside the through hole; The above-mentioned sleeve component includes a disc-shaped first portion having a thickness thinner than the mounting portion; an annular second portion formed below the first portion and having a diameter larger than that of the first portion; and an annular third portion formed below the second portion and having a diameter smaller than that of the second portion; The first portion, the second portion, and the third portion are integrally formed of the same material, and the first portion and the second portion are located above the adhesive layer. A fine hole is formed in the first portion, and the lower surface of the first portion is recessed to form an internal space, and the fine hole is connected to the internal space. The third portion is not in contact with the adhesive layer, and the third portion is not in contact with the base, and the third portion extends below the adhesive layer. The inner space formed in the first portion extends to the second portion and the third portion. A diameter of the internal space in the first portion is equal to a diameter of the internal space in the second portion, and is also equal to a diameter of the internal space in the third portion.

2. The mounting table according to claim 1, wherein: The pores are formed on the upper surface and / or side surfaces of the first portion.

3. The mounting table according to claim 2, wherein: The upper surface of the first portion is located at the same height as the upper surface of the placement portion, or at any height from the bottom to the top of the dot-shaped protrusions and recesses provided on the upper surface of the placement portion.

4. The mounting table according to claim 2 or 3, wherein: The pores are formed on the side of the first portion. A space is provided between the side surface of the first portion and the opposing surface of the placement portion.

5. The mounting table according to any one of claims 1 to 3, wherein A space is provided between the side surface of the third portion and the wall surface of the through hole of the base.

6. The mounting table according to any one of claims 1 to 3, wherein The sleeve component is made of SiC or ceramic.

7. A plasma processing apparatus comprising: chamber; a base, which is disposed in the plasma processing space inside the chamber; a placing portion for placing a substrate on an upper surface of the placing portion and arranged on the base; an adhesive layer for bonding the mounting portion and the base; a through hole penetrating the mounting portion, the base, and the adhesive layer for supplying a heat transfer gas; and a sleeve component disposed inside the through hole; The above-mentioned sleeve component includes a disc-shaped first portion having a thickness thinner than the mounting portion; an annular second portion formed below the first portion and having a diameter larger than that of the first portion; and an annular third portion formed below the second portion and having a diameter smaller than that of the second portion; The first portion, the second portion, and the third portion are integrally formed of the same material, and the first portion and the second portion are located above the adhesive layer. A fine hole is formed in the first portion, and the lower surface of the first portion is recessed to form an internal space, and the fine hole is connected to the internal space. The third portion is not in contact with the adhesive layer, and the third portion is not in contact with the base, and the third portion extends below the adhesive layer. The inner space formed in the first portion extends to the second portion and the third portion. A diameter of the internal space in the first portion is equal to a diameter of the internal space in the second portion, and is also equal to a diameter of the internal space in the third portion.

8. A cleaning method for a plasma processing apparatus, wherein the plasma processing apparatus comprises: chamber; a base, which is disposed in the plasma processing space inside the chamber; a placing portion for placing a substrate on an upper surface of the placing portion and arranged on the base; an adhesive layer for bonding the mounting portion and the base; a through hole penetrating the mounting portion, the base, and the adhesive layer for supplying a heat transfer gas; and a sleeve component disposed inside the through hole; The above-mentioned sleeve component includes a disc-shaped first portion having a thickness thinner than the mounting portion; an annular second portion formed below the first portion and having a diameter larger than that of the first portion; as well as an annular third portion formed below the second portion and having a diameter smaller than that of the second portion; The first portion, the second portion, and the third portion are integrally formed of the same material, and the first portion and the second portion are located above the adhesive layer. A fine hole is formed in the first portion, and the lower surface of the first portion is recessed to form an internal space, and the fine hole is connected to the internal space. The third portion is not in contact with the adhesive layer, and the third portion is not in contact with the base. The third portion extends below the adhesive layer. The inner space formed in the first portion extends to the second portion and the third portion. The diameter of the inner space in the first portion is equal to the diameter of the inner space in the second portion, and is also equal to the diameter of the inner space in the third portion. The cleaning method has the following features: a step of supplying heat transfer gas from the through hole; supplying a cleaning gas into the chamber; and A step of cleaning the interior of the chamber using the plasma of the cleaning gas.

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