An optical chip

Abstract

The present disclosure provides an optical chip comprising a back-emitting vertical cavity surface emitting laser (VCSEL), wherein a substrate layer of the back-emitting VCSEL is used to form an optical element, or a structural layer corresponding to the optical element is formed on the substrate layer. Because the substrate layer of the back-emitting VCSEL is located on the outside, the present disclosure does not require changes to the structure of the back-emitting VCSEL. The substrate layer can be directly used to form the optical element, or a structural layer corresponding to the optical element can be formed on the substrate layer, thereby reducing system size and cost while significantly improving shaping quality.

Description

Technical Field

[0001] The present disclosure generally relates to the field of optoelectronic device technology, and more particularly to an optical chip. Background Art

[0002] With increasing research and expanding application demands, laser emission modules are playing an increasingly important role in 3D sensing, facial recognition, gesture detection, and virtual reality (VR), augmented reality (AR), and mixed reality (MR). Vertical Cavity Surface Emitting Lasers (VCSELs) have become the preferred light source for structured light projection modules due to their numerous advantages, including compact size, high power, and stable operation.

[0003] Because the light emitted by a VCSEL needs to undergo shaping processes such as collimation and beam expansion before it can be projected into a spatial environment, current technologies use additional optical devices in front of the VCSEL to shape the beam. However, this method is costly, and the effective focal length (EFFL) cannot be made very small, resulting in limited shaping capabilities. Summary of the Invention

[0004] In view of the above-mentioned defects or deficiencies in the related art, it is desired to provide an optical chip that can not only reduce costs but also improve shaping quality.

[0005] The present disclosure provides an optical chip, which includes a back-emitting vertical cavity surface emitting laser. The substrate layer of the back-emitting vertical cavity surface emitting laser is used to form an optical element, or a structural layer corresponding to the optical element is formed on the substrate layer.

[0006] Optionally, in some embodiments of the present disclosure, the optical element includes any one of a spherical lens, an aspherical lens, a free-form lens, a Fresnel lens and a binary lens.

[0007] Optionally, in some embodiments of the present disclosure, the spherical lens includes any one of a convex lens and a concave lens.

[0008] Optionally, in some embodiments of the present disclosure, the material of the substrate layer includes at least one of gallium arsenide, gallium nitride, indium phosphide and silicon.

[0009] Optionally, in some embodiments of the present disclosure, the back-emitting vertical cavity surface emitting laser includes a first electrode layer, a first reflector layer, a light-emitting layer, a second reflector layer and a second electrode layer stacked in sequence below the substrate layer.

[0010] Optionally, in some embodiments of the present disclosure, the light-emitting layer includes an oxide layer and an active layer stacked together, the oxide layer includes at least one unoxidized region for emitting laser light and an oxidized region surrounding the at least one unoxidized region;

[0011] The position of the oxidized layer corresponds to the position of the optical element, or the position of the unoxidized region corresponds to the position of the optical element.

[0012] Optionally, in some embodiments of the present disclosure, when the position of the unoxidized area corresponds to the position of the optical element, at least one gap for routing is provided in the substrate layer, and the position of the gap corresponds to the position of the oxidized area.

[0013] Optionally, in some embodiments of the present disclosure, the first electrode layer is an N-type electrode layer, the second electrode layer is a P-type electrode layer, and a P-type electrode contact layer is provided between the P-type electrode layer and the second reflector layer.

[0014] Optionally, in some embodiments of the present disclosure, the first reflector layer is an N-type reflector layer, and the second reflector layer is a P-type reflector layer.

[0015] Optionally, in some embodiments of the present disclosure, the first reflector layer and the second reflector layer include at least one of a Bragg reflector layer and a high-contrast grating layer.

[0016] It can be seen from the above technical solutions that the embodiments of the present disclosure have the following advantages:

[0017] The embodiments of the present disclosure provide an optical chip. Since the substrate layer of the back-emitting vertical cavity surface emitting laser is located on the outside, there is no need to change the structure of the back-emitting vertical cavity surface emitting laser. The substrate layer can be directly used to form an optical element, or a structural layer corresponding to the optical element can be formed on the substrate layer, thereby reducing the system size and cost, while greatly improving the shaping quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Other features, objects and advantages of the present disclosure will become more apparent from a reading of the detailed description of non-limiting embodiments made with reference to the following drawings:

[0019] Figure 1 A schematic structural diagram of an optical chip provided in an embodiment of the present disclosure;

[0020] Figure 2 A schematic structural diagram of another optical chip provided in an embodiment of the present disclosure;

[0021] Figure 3A specific example of an optical chip provided in an embodiment of the present disclosure;

[0022] Figure 4 A specific example of another optical chip provided in an embodiment of the present disclosure;

[0023] Figure 5 A specific example of another optical chip provided in an embodiment of the present disclosure;

[0024] Figure 6 This is a specific example of another optical chip provided in an embodiment of the present disclosure.

[0025] Reference numerals:

[0026] 100-optical chip, 101-back-emitting vertical cavity surface emitting laser, 102-substrate layer, 103-optical element, 104-structural layer, 105-first electrode layer, 106-first reflector layer, 107-light-emitting layer, 108-second reflector layer, 109-second electrode layer, 110-P-type electrode contact layer, 111-oxide layer, 112-active layer, 113-unoxidized area, 114-oxidized area, 115-gap. DETAILED DESCRIPTION

[0027] In order to enable those skilled in the art to better understand the solutions of the present disclosure, the technical solutions in the embodiments of the present disclosure will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, not all of the embodiments. Based on the embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without making any creative efforts shall fall within the scope of protection of the present disclosure.

[0028] The terms "first," "second," "third," "fourth," and so forth (if any) in the description and claims of the present disclosure and the accompanying drawings are used to distinguish similar objects and are not necessarily used to describe a particular order or sequential sequence. It should be understood that the terms used in this manner are interchangeable where appropriate, so that the embodiments of the present disclosure described can be practiced in orders other than those illustrated or described herein.

[0029] In addition, the terms "comprise" and "have" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or apparatus that includes a series of steps or modules is not necessarily limited to those steps or modules explicitly listed, but may include other steps or modules not explicitly listed or inherent to such process, method, product or apparatus.

[0030] For ease of understanding and explanation, the following Figures 1 to 6 The optical chip provided by the embodiments of the present disclosure is described in detail.

[0031] Please refer to Figure 1 , which is a schematic structural diagram of an optical chip provided by an embodiment of the present disclosure. The optical chip 100 includes a back-emitting vertical cavity surface emitting laser 101, wherein the substrate layer 102 of the back-emitting vertical cavity surface emitting laser 101 is used to form an optical element 103, or a structural layer 104 corresponding to the optical element 103 is formed on the substrate layer 102. The advantage of this arrangement is that since the substrate layer 102 of the back-emitting vertical cavity surface emitting laser 101 is located on the outside, there is no need to change the structure of the back-emitting vertical cavity surface emitting laser 101, and thus the optical element 103 formed can reduce the system size, reduce costs, and improve the shaping quality.

[0032] Optionally, in some embodiments of the present disclosure, the optical element 103 may include, but is not limited to, any one of a spherical lens, an aspherical lens, a free-form surface lens, a Fresnel lens, and a binary lens. For example, the spherical lens may include any one of a convex lens and a concave lens.

[0033] Optionally, in some embodiments of the present disclosure, the material of the substrate layer 102 may include, but is not limited to, at least one of gallium arsenide (GaAs), gallium nitride (GaN), indium phosphide (InP), and silicon (Si).

[0034] Optionally, in some embodiments of the present disclosure, the back-emitting vertical cavity surface emitting laser 101 may include a first electrode layer 105 , a first reflector layer 106 , a light-emitting layer 107 , a second reflector layer 108 and a second electrode layer 109 stacked sequentially below the substrate layer 102 .

[0035] For example, in the embodiment of the present disclosure, the first electrode layer 105 is an N-type electrode layer, the second electrode layer 109 is a P-type electrode layer, and a P-type electrode contact layer 110 is provided between the P-type electrode layer and the second reflector layer 108 .

[0036] For another example, in the embodiment of the present disclosure, the first reflector layer 106 is an N-type reflector layer, and the second reflector layer 108 is a P-type reflector layer. In this case, the N-type reflector layer is located at the top, that is, the light-emitting side of the laser. Since the N-type reflector layer has a low resistance, the quality of the laser beam can be improved. Furthermore, the first reflector layer 106 and the second reflector layer 108 include at least one of a Bragg reflector (Distributed Bragg Reflector, DBR) layer and a high contrast grating (High Contrast Grating, HCG) layer. In other words, the first reflector layer 106 and the second reflector layer 108 are both Bragg reflectors, or the first reflector layer 106 and the second reflector layer 108 are both high contrast gratings, or one of the first reflector layer 106 and the second reflector layer 108 is a Bragg reflector and the other is a high contrast grating.

[0037] For another example, in the embodiment of the present disclosure, the light-emitting layer 107 includes an oxide layer 111 and an active layer 112 arranged in a stacked manner. The oxide layer 111 includes at least one unoxidized region 113 for emitting laser light and an oxidized region 114 surrounding at least one unoxidized region 113. The unoxidized region 113 is a conductive region. After a voltage is applied to the electrodes at both ends of the back-emitting vertical cavity surface emitting laser 101 thin film chip, the current is conducted through the unoxidized region 113, while the oxidized region 114 is an insulating region for isolating the current. The active layer 112 is a multiple quantum well (MQW) layer or a single quantum well layer for emitting light when powered. The position of the oxide layer 111 corresponds to the position of the optical element 103. The advantage of this arrangement is that the emitted laser light from all unoxidized regions 113 can be beam-shaped together, which is simple to operate and convenient to process. Alternatively, the position of the unoxidized area 113 corresponds to the position of the optical element 103. The advantage of this arrangement is that the emitted laser light from each unoxidized area 113 can be shaped individually with higher precision. Figure 2 As shown, when the position of the unoxidized region 113 corresponds to the position of the optical element 103 , at least one gap 115 for wiring may be provided in the substrate layer 102 , and the position of the gap 115 corresponds to the position of the oxidized region 114 .

[0038] The following combination Figures 3 to 6 , the arrangement of the optical element 103 is described. Figure 3 The middle optical element 103 is a convex lens for collimation and focusing. Figure 4 The optical element 103 is a concave lens for beam expansion and divergence, and the substrate layer 102 is directly used to form the optical element 103. Figure 5 The optical element 103 is a convex lens. Figure 6 The optical element 103 is a concave lens. In this case, a structural layer 104 corresponding to the optical element 103 is formed on the substrate layer 102 .

[0039] The embodiments of the present disclosure provide an optical chip. Since the substrate layer of the back-emitting vertical cavity surface emitting laser is located on the outside, there is no need to change the structure of the back-emitting vertical cavity surface emitting laser. The substrate layer can be directly used to form an optical element, or a structural layer corresponding to the optical element can be formed on the substrate layer, thereby reducing the system size and cost, while greatly improving the shaping quality.

[0040] It should be noted that the above embodiments are only used to illustrate the technical solutions of the present disclosure, rather than to limit them. Although the present disclosure has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the various embodiments of the present disclosure.

Claims

1. An optical chip, characterized in that: The optical chip includes a back-emitting vertical cavity surface emitting laser, the substrate layer of the back-emitting vertical cavity surface emitting laser is used to form an optical element, or a structural layer corresponding to the optical element is formed on the substrate layer, The back-emitting vertical cavity surface emitting laser includes a first electrode layer, a first reflector layer, a light-emitting layer, a second reflector layer and a second electrode layer stacked in sequence below the substrate layer. The light-emitting layer includes an oxide layer and an active layer stacked in layers. The active layer is a multi-quantum well layer or a single quantum well layer.

2. The optical chip according to claim 1, wherein: The optical element includes any one of a spherical lens, an aspherical lens, a free-form lens, a Fresnel lens and a binary lens.

3. The optical chip according to claim 2, characterized in that The spherical lens includes any one of a convex lens and a concave lens.

4. The optical chip according to claim 1, wherein: The material of the substrate layer includes at least one of gallium arsenide, gallium nitride, indium phosphide and silicon.

5. The optical chip according to claim 1, wherein: The oxide layer includes at least one unoxidized region for emitting laser light and an oxidized region surrounding the at least one unoxidized region; The position of the oxidized layer corresponds to the position of the optical element, or the position of the unoxidized region corresponds to the position of the optical element.

6. The optical chip according to claim 5, characterized in that In a case where the position of the unoxidized region corresponds to the position of the optical element, at least one gap for routing is provided in the substrate layer, and the position of the gap corresponds to the position of the oxidized region.

7. The optical chip according to claim 1, wherein: The first electrode layer is an N-type electrode layer, the second electrode layer is a P-type electrode layer, and a P-type electrode contact layer is provided between the P-type electrode layer and the second reflector layer.

8. The optical chip according to claim 1, wherein: The first reflector layer is an N-type reflector layer, and the second reflector layer is a P-type reflector layer.

9. The optical chip according to claim 8, characterized in that The first reflector layer and the second reflector layer include at least one of a Bragg reflector layer and a high contrast grating layer.

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