Nor flash chip reference current adjusting method and system

Abstract

The application discloses a NorFlash chip reference current adjusting method and system, and the method comprises the following steps: judging whether the initial current of the NorFlash chip is less than the target current, if yes, then: performing an erase operation on the NorFlash chip based on an erase voltage until the current of the NorFlash chip after the erase operation is greater than the target current; performing a programming operation on the NorFlash chip based on a programming initial voltage to obtain the first current of the NorFlash chip after the initial programming operation; calculating the first difference between the first current and the target current; judging whether the first difference is greater than a preset value, if yes, then performing the programming operation on the NorFlash chip based on the first programming voltage, if not, then: performing the programming operation on the NorFlash chip based on a second programming voltage. The application can flexibly adopt different adjusting modes according to different current values of the NorFlash chip, effectively reduces the operation times, improves the efficiency, and reduces the cost.

Description

Technical Field

[0001] This invention relates to the field of NorFlash chip adjustment technology, and in particular to a method and system for adjusting the reference current of a NorFlash chip. Background Technology

[0002] The reference current of a NorFlash chip serves as a reference point to determine its output and input logic decisions. Theoretically, it should not change with external factors and is therefore an important benchmark. Since the chip's reference current is initially in an initial state, different from the target current, it needs to be adjusted.

[0003] The chip reference current is adjusted mainly through two methods: programming and erasing. The programming and erasing speeds are primarily determined by the magnitude and duration of the high voltage.

[0004] The chip needs to undergo multiple programming and erasing operations to adjust the reference current to the target value. If the high voltage and high voltage time settings for the programming and erasing operations are not appropriate, it will cause the number of programming and erasing operations to be performed too many times when adjusting the reference current, which will increase the adjustment time and cost.

[0005] Therefore, how to effectively reduce the number of operations, improve efficiency, and reduce costs when adjusting the reference current of NorFlash chips is an urgent problem to be solved. Summary of the Invention

[0006] In view of this, the present invention provides a method for adjusting the reference current of a NorFlash chip, which can effectively reduce the number of operations, improve efficiency, and reduce costs.

[0007] This invention provides a method for adjusting the reference current of a NorFlash chip, comprising:

[0008] Determine whether the initial current of the NorFlash chip is less than the target current. If so, then:

[0009] The NorFlash chip is erased based on the erase voltage until the current of the NorFlash chip after the erase operation is greater than the target current.

[0010] The NorFlash chip is programmed based on the initial programming voltage to obtain the first current of the NorFlash chip after the initial programming operation.

[0011] Calculate the first difference between the first current and the target current;

[0012] Determine whether the first difference is greater than a preset value. If yes, then program the NorFlash chip based on the first programming voltage. If no, then:

[0013] The NorFlash chip is programmed based on the second programming voltage.

[0014] Preferably, the method further includes:

[0015] When the initial current of the NorFlash chip is greater than the target current, the NorFlash chip is programmed based on the initial programming voltage to obtain the second current of the NorFlash chip after the first programming operation.

[0016] Calculate the second difference between the second current and the target current;

[0017] Determine whether the second difference is greater than the preset value. If yes, then program the NorFlash chip based on the third programming voltage. If no, then:

[0018] The NorFlash chip is programmed based on the fourth programming voltage.

[0019] Preferably, the erasure voltage is determined based on the formula y1=a1(x1-1)+b1, where y1 is the erasure voltage, a1 is the first parameter value, x1 is the number of erasures, and b1 is the starting voltage;

[0020] The initial programming voltage is based on the formula y2 = a2x2 + b2, where y2 is the initial programming voltage, a2 is the second parameter value, x2 is the target current, and b2 is the third parameter value.

[0021] Preferably, the first programming voltage is determined based on the formula y3 = c1 * first difference + y0, where c1 is the first step value and y0 is the voltage of the previous programming.

[0022] The second programming voltage is determined based on the formula y4 = c2 * first difference + y0, where c2 is the second step value, y0 is the voltage of the previous programming, and c1 > c2.

[0023] Preferably, the third programming voltage is determined based on the formula y5 = c1 * second difference + y0, where c1 is the first programming value and y0 is the voltage of the previous programming.

[0024] The fourth programming voltage is determined based on the formula y6 = c2 * second difference + y0, where c2 is the second step value, y0 is the voltage of the previous programming, and c1 > c2.

[0025] A NorFlash chip reference current regulation system includes:

[0026] The first judgment module is used to determine whether the initial current of the NorFlash chip is less than the target current;

[0027] The erase module is used to erase the NorFlash chip based on the erase voltage when the initial current of the NorFlash chip is less than the target current, until the current of the NorFlash chip after the erase operation is greater than the target current.

[0028] The programming module is used to program the NorFlash chip based on the initial programming voltage to obtain the first current of the NorFlash chip after the initial programming operation.

[0029] A first calculation module is used to calculate a first difference between the first current and the target current;

[0030] The second judgment module is used to determine whether the first difference is greater than a preset value;

[0031] The programming module is also used to program the NorFlash chip based on the first programming voltage when the first difference is greater than a preset value.

[0032] The programming module is also used to program the NorFlash chip based on a second programming voltage when the first difference is less than a preset value.

[0033] Preferably, the programming module is further used for:

[0034] When the initial current of the NorFlash chip is greater than the target current, the NorFlash chip is programmed based on the initial programming voltage to obtain the second current of the NorFlash chip after the first programming operation.

[0035] The system also includes:

[0036] The second calculation module is used to calculate the second difference between the second current and the target current;

[0037] The third judgment module is used to determine whether the second difference is greater than the preset value;

[0038] The programming module is further configured to perform a programming operation on the NorFlash chip based on a third programming voltage when the second difference is greater than the preset value;

[0039] The programming module is also used to program the NorFlash chip based on a fourth programming voltage when the second difference is less than the preset value.

[0040] Preferably, the erasure voltage is determined based on the formula y1=a1(x1-1)+b1, where y1 is the erasure voltage, a1 is the first parameter value, x1 is the number of erasures, and b1 is the starting voltage;

[0041] The initial programming voltage is determined based on the formula y2 = a2x2 + b2, where y2 is the initial programming voltage, a2 is the second parameter value, x2 is the target current, and b2 is the third parameter value.

[0042] Preferably, the first programming voltage is determined based on the formula y3 = c1 * first difference + y0, where c1 is the first step value and y0 is the voltage of the previous programming.

[0043] The second programming voltage is determined based on the formula y4 = c2 * first difference + y0, where c2 is the second step value, y0 is the voltage of the previous programming, and c1 > c2.

[0044] Preferably, the third programming voltage is determined based on the formula y5 = c1 * second difference + y0, where c1 is the first programming value and y0 is the voltage of the previous programming.

[0045] The fourth programming voltage is determined based on the formula y6 = c2 * second difference + y0, where c2 is the second step value, y0 is the voltage of the previous programming, and c1 > c2.

[0046] In summary, this invention discloses a method for adjusting the reference current of a NorFlash chip. When it is necessary to adjust the reference current of a NorFlash chip, the method first determines whether the initial current of the NorFlash chip is less than the target current. If so, the method proceeds as follows: The NorFlash chip is erased based on the erase voltage until the current of the NorFlash chip after the erase operation is greater than the target current; The NorFlash chip is then programmed based on the initial programming voltage to obtain a first current after the initial programming operation; A first difference between the first current and the target current is calculated; It is then determined whether the first difference is greater than a preset value. If so, the NorFlash chip is programmed based on the first programming voltage; otherwise, the NorFlash chip is programmed based on a second programming voltage. This invention can flexibly adopt different adjustment methods according to different current values ​​of the NorFlash chip, effectively reducing the number of operations, improving efficiency, and reducing costs. Attached Figure Description

[0047] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0048] Figure 1 This is a flowchart of Embodiment 1 of a NorFlash chip reference current adjustment method disclosed in this invention;

[0049] Figure 2 This is a flowchart of Embodiment 2 of a NorFlash chip reference current adjustment method disclosed in this invention;

[0050] Figure 3 This is a schematic diagram of the structure of a NorFlash chip reference current adjustment system according to Embodiment 1 of the present invention;

[0051] Figure 4 This is a schematic diagram of a second embodiment of a NorFlash chip reference current regulation system disclosed in this invention. Detailed Implementation

[0052] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0053] like Figure 1 The diagram shown is a flowchart of Embodiment 1 of a NorFlash chip reference current adjustment method disclosed in this invention. The method may include the following steps:

[0054] S101. Determine if the initial current of the NorFlash chip is less than the target current. If so, proceed to S102:

[0055] When it is necessary to adjust the reference current of the NorFlash chip, the initial current of the NorFlash chip is first determined to see if it is less than the target current.

[0056] S102. Perform an erase operation on the NorFlash chip based on the erase voltage until the current of the NorFlash chip after the erase operation is greater than the target current.

[0057] When the initial current of the NorFlash chip is less than the target current, the current of the NorFlash chip is first coarsely adjusted using an erase operation. The purpose of the coarse adjustment is to make the current that is less than the target current slightly greater than the target current with as few operations as possible.

[0058] Specifically, when performing an erase operation on a NorFlash chip, the erase operation is based on the erase voltage. The magnitude of the erase voltage is determined according to the formula: y1 = a1(x1-1) + b1, where y1 is the erase voltage, a1 is the first parameter value, x1 is the number of erase cycles, and b1 is the starting voltage for the first erase operation. The first parameter value a1 can be flexibly set according to actual needs.

[0059] S103. Program the NorFlash chip based on the initial programming voltage to obtain the first current of the NorFlash chip after the initial programming operation.

[0060] After adjusting the current of the NorFlash chip to slightly exceed the target current through an erase operation, fine-tuning is performed using a programming operation.

[0061] Specifically, the NorFlash chip is first programmed based on the initial programming voltage to obtain the first current of the NorFlash chip after the initial programming operation. The initial programming voltage is based on the formula y2 = a2x2 + b2, where y2 is the initial programming voltage, a2 is the second parameter value, x2 is the target current, and b2 is the third parameter value. The second parameter value a2 and the third parameter value b2 can be flexibly set according to actual needs.

[0062] S104. Calculate the first difference between the first current and the target current;

[0063] Then, calculate the first difference between the first current of the NorFlash chip after the initial programming operation and the first target current.

[0064] S105. Determine whether the first difference is greater than the preset value. If yes, proceed to S106; otherwise, proceed to S107.

[0065] Then, it is determined whether the first difference between the first current of the NorFlash chip after the initial programming operation and the first target current is greater than a preset value.

[0066] S106. Program the NorFlash chip based on the first programming voltage;

[0067] When the first difference is greater than the preset value, the NorFlash chip is programmed using the first programming voltage.

[0068] The first programming voltage is determined based on the formula y3 = c1 * first difference + y0, where c1 is the first programming value and y0 is the voltage of the previous programming.

[0069] S107. Program the NorFlash chip based on the second programming voltage.

[0070] When the first difference is less than the preset value, the NorFlash chip is programmed using the second programming voltage.

[0071] The second programming voltage is determined based on the formula y4 = c2 * first difference + y0, where c2 is the second step value and y0 is the voltage of the previous programming. C1 > C2, meaning that when the first difference is greater than the preset value, a larger step is used for programming, and when the first difference is less than the preset value, a smaller step is used for programming. By flexibly using different steps for programming, the accuracy of adjusting the reference current can be increased while reducing the number of adjustments.

[0072] like Figure 2 The diagram shown is a flowchart of Embodiment 2 of a NorFlash chip reference current adjustment method disclosed in this invention. The method may include the following steps:

[0073] S201. Determine if the initial current of the NorFlash chip is less than the target current. If not, proceed to S202:

[0074] When it is necessary to adjust the reference current of the NorFlash chip, the initial current of the NorFlash chip is first determined to see if it is less than the target current.

[0075] S202. Program the NorFlash chip based on the initial programming voltage to obtain the second current of the NorFlash chip after the initial programming operation.

[0076] When the initial current of the NorFlash chip is greater than the target current, programming operations are performed directly.

[0077] Specifically, the NorFlash chip is first programmed based on the initial programming voltage to obtain the second current of the NorFlash chip after the initial programming operation. The initial programming voltage is based on the formula y2 = a2x2 + b2, where y2 is the initial programming voltage, a2 is the second parameter value, x2 is the target current, and b2 is the third parameter value. The second parameter value a2 and the third parameter value b2 can be flexibly set according to actual needs.

[0078] S203. Calculate the second difference between the second current and the target current;

[0079] Then, the second difference between the second current of the NorFlash chip after the initial programming operation and the target current is calculated.

[0080] S204. Determine whether the second difference is greater than the preset value. If yes, proceed to S205; otherwise, proceed to S206.

[0081] Then, it is determined whether the second difference between the second current of the NorFlash chip after the initial programming operation and the second target current is greater than a preset value.

[0082] S205. Program the NorFlash chip based on the third programming voltage;

[0083] When the second difference is greater than the preset value, the NorFlash chip is programmed using the third programming voltage.

[0084] The third programming voltage is determined based on the formula y5 = c1 * second difference + y0, where c1 is the first programming value and y0 is the voltage of the previous programming.

[0085] S206. Program the NorFlash chip based on the fourth programming voltage.

[0086] When the second difference is less than the preset value, the NorFlash chip is programmed using the fourth programming voltage.

[0087] The fourth programming voltage is determined based on the formula y6 = c2 * second difference + y0, where c2 is the second step value and y0 is the voltage of the previous programming. C1 > C2, meaning that when the second difference is greater than the preset value, a larger step is used for programming, and when the second difference is less than the preset value, a smaller step is used. By flexibly using different steps for programming, the accuracy of adjusting the reference current can be increased while reducing the number of adjustments.

[0088] In summary, when adjusting the reference current of a NorFlash chip, this invention can set different starting voltages according to different target currents, and can divide the adjustment of the reference current into two processes: coarse adjustment and fine adjustment. In the fine adjustment process, the voltage increase can be divided into two stages: large step and small step, according to the difference between the current and the target current, so that the adjustment result is more accurate while reducing the number of programming and erasing operations.

[0089] like Figure 3 The diagram shown is a structural schematic of Embodiment 1 of a NorFlash chip reference current regulation system disclosed in this invention. The system may include:

[0090] The first judgment module 301 is used to determine whether the initial current of the NorFlash chip is less than the target current;

[0091] When it is necessary to adjust the reference current of the NorFlash chip, the initial current of the NorFlash chip is first determined to see if it is less than the target current.

[0092] The erase module 302 is used to erase the NorFlash chip based on the erase voltage when the initial current of the NorFlash chip is less than the target current, until the current of the NorFlash chip after the erase operation is greater than the target current.

[0093] When the initial current of the NorFlash chip is less than the target current, the current of the NorFlash chip is first coarsely adjusted using an erase operation. The purpose of the coarse adjustment is to make the current that is less than the target current slightly greater than the target current with as few operations as possible.

[0094] Specifically, when performing an erase operation on a NorFlash chip, the erase operation is based on the erase voltage. The magnitude of the erase voltage is determined according to the formula: y1 = a1(x1-1) + b1, where y1 is the erase voltage, a1 is the first parameter value, x1 is the number of erase cycles, and b1 is the starting voltage for the first erase operation. The first parameter value a1 can be flexibly set according to actual needs.

[0095] The programming module 303 is used to program the NorFlash chip based on the initial programming voltage to obtain the first current of the NorFlash chip after the initial programming operation.

[0096] After adjusting the current of the NorFlash chip to slightly exceed the target current through an erase operation, fine-tuning is performed using a programming operation.

[0097] Specifically, the NorFlash chip is first programmed based on the initial programming voltage to obtain the first current of the NorFlash chip after the initial programming operation. The initial programming voltage is based on the formula y2 = a2x2 + b2, where y2 is the initial programming voltage, a2 is the second parameter value, x2 is the target current, and b2 is the third parameter value. The second parameter value a2 and the third parameter value b2 can be flexibly set according to actual needs.

[0098] The first calculation module 304 is used to calculate the first difference between the first current and the target current;

[0099] Then, calculate the first difference between the first current of the NorFlash chip after the initial programming operation and the first target current.

[0100] The second judgment module 305 is used to determine whether the first difference is greater than a preset value;

[0101] Then, it is determined whether the first difference between the first current of the NorFlash chip after the initial programming operation and the first target current is greater than a preset value.

[0102] The programming module 303 is also used to program the NorFlash chip based on the first programming voltage when the first difference is greater than the preset value;

[0103] When the first difference is greater than the preset value, the NorFlash chip is programmed using the first programming voltage.

[0104] The first programming voltage is determined based on the formula y3 = c1 * first difference + y0, where c1 is the first programming value and y0 is the voltage of the previous programming.

[0105] The programming module 303 is also used to program the NorFlash chip based on the second programming voltage when the first difference is less than a preset value.

[0106] When the first difference is less than the preset value, the NorFlash chip is programmed using the second programming voltage.

[0107] The second programming voltage is determined based on the formula y4 = c2 * first difference + y0, where c2 is the second step value and y0 is the voltage of the previous programming. C1 > C2, meaning that when the first difference is greater than the preset value, a larger step is used for programming, and when the first difference is less than the preset value, a smaller step is used for programming. By flexibly using different steps for programming, the accuracy of adjusting the reference current can be increased while reducing the number of adjustments.

[0108] like Figure 4 The diagram shown is a schematic representation of a second embodiment of a NorFlash chip reference current regulation system disclosed in this invention. The system may include:

[0109] The first judgment module 401 is used to determine whether the initial current of the NorFlash chip is less than the target current;

[0110] When it is necessary to adjust the reference current of the NorFlash chip, the initial current of the NorFlash chip is first determined to see if it is less than the target current.

[0111] The programming module 402 is used to program the NorFlash chip based on the initial programming voltage when the initial current of the NorFlash chip is greater than the target current, so as to obtain the second current of the NorFlash chip after the first programming operation.

[0112] When the initial current of the NorFlash chip is greater than the target current, programming operations are performed directly.

[0113] Specifically, the NorFlash chip is first programmed based on the initial programming voltage to obtain the second current of the NorFlash chip after the initial programming operation. The initial programming voltage is based on the formula y2 = a2x2 + b2, where y2 is the initial programming voltage, a2 is the second parameter value, x2 is the target current, and b2 is the third parameter value. The second parameter value a2 and the third parameter value b2 can be flexibly set according to actual needs.

[0114] The second calculation module 403 is used to calculate the second difference between the second current and the target current;

[0115] Then, the second difference between the second current of the NorFlash chip after the initial programming operation and the target current is calculated.

[0116] The third judgment module 404 is used to determine whether the second difference is greater than a preset value;

[0117] Then, it is determined whether the second difference between the second current of the NorFlash chip after the initial programming operation and the second target current is greater than a preset value.

[0118] The programming module 402 is also used to program the NorFlash chip based on the third programming voltage when the second difference is greater than the preset value;

[0119] When the second difference is greater than the preset value, the NorFlash chip is programmed using the third programming voltage.

[0120] The third programming voltage is determined based on the formula y5 = c1 * second difference + y0, where c1 is the first programming value and y0 is the voltage of the previous programming.

[0121] The programming module 402 is also used to program the NorFlash chip based on the fourth programming voltage when the second difference is less than the preset value.

[0122] When the second difference is less than the preset value, the NorFlash chip is programmed using the fourth programming voltage.

[0123] The fourth programming voltage is determined based on the formula y6 = c2 * second difference + y0, where c2 is the second step value and y0 is the voltage of the previous programming. C1 > C2, meaning that when the second difference is greater than the preset value, a larger step is used for programming, and when the second difference is less than the preset value, a smaller step is used. By flexibly using different steps for programming, the accuracy of adjusting the reference current can be increased while reducing the number of adjustments.

[0124] In summary, when adjusting the reference current of a NorFlash chip, this invention can set different starting voltages according to different target currents, and can divide the adjustment of the reference current into two processes: coarse adjustment and fine adjustment. In the fine adjustment process, the voltage increase can be divided into two stages: large step and small step, according to the difference between the current and the target current, so that the adjustment result is more accurate while reducing the number of programming and erasing operations.

[0125] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on its differences from other embodiments. Similar or identical parts between embodiments can be referred to interchangeably. For the apparatus disclosed in the embodiments, since they correspond to the methods disclosed in the embodiments, the description is relatively simple; relevant parts can be referred to the method section.

[0126] Those skilled in the art will further recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, computer software, or a combination of both. To clearly illustrate the interchangeability of hardware and software, the components and steps of the various examples have been generally described in terms of functionality in the foregoing description. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementations should not be considered beyond the scope of this invention.

[0127] The steps of the methods or algorithms described in conjunction with the embodiments disclosed herein can be implemented directly by hardware, a software module executed by a processor, or a combination of both. The software module can be located in random access memory (RAM), main memory, read-only memory (ROM), electrically programmable ROM, electrically erasable programmable ROM, registers, hard disk, removable disk, CD-ROM, or any other form of storage medium known in the art.

[0128] The above description of the disclosed embodiments enables those skilled in the art to make or use the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for adjusting the reference current of a NorFlash chip, characterized in that, include: Determine whether the initial current of the NorFlash chip is less than the target current. If so, use an erase operation to coarsely adjust the current of the NorFlash chip. The NorFlash chip is erased based on the erase voltage until the current of the NorFlash chip after the erase operation is greater than the target current. Fine-tuning is then performed using programming operations. The NorFlash chip is programmed based on the initial programming voltage to obtain the first current of the NorFlash chip after the initial programming operation. Calculate the first difference between the first current and the target current; Determine whether the first difference is greater than a preset value. If yes, then program the NorFlash chip based on the first programming voltage to use a large programming step. If no, then: The NorFlash chip is programmed based on a second programming voltage to perform programming operations using small steps.

2. The method according to claim 1, characterized in that, Also includes: When the initial current of the NorFlash chip is greater than the target current, the NorFlash chip is programmed based on the initial programming voltage to obtain the second current of the NorFlash chip after the first programming operation. Calculate the second difference between the second current and the target current; Determine whether the second difference is greater than the preset value. If yes, then program the NorFlash chip based on the third programming voltage. If no, then: The NorFlash chip is programmed based on the fourth programming voltage.

3. The method according to claim 1, characterized in that, The erasure voltage is determined based on the formula y1=a1(x1-1)+b1, where y1 is the erasure voltage, a1 is the first parameter value, x1 is the number of erasures, and b1 is the starting voltage; The initial programming voltage is based on the formula y2 = a2x2 + b2, where y2 is the initial programming voltage, a2 is the second parameter value, x2 is the target current, and b2 is the third parameter value.

4. The method according to claim 1, characterized in that, The first programming voltage is determined based on the formula y3 = c1 * first difference + y0, where c1 is the first programming value and y0 is the voltage of the previous programming. The second programming voltage is determined based on the formula y4 = c2 * first difference + y0, where c2 is the second step value, y0 is the voltage of the previous programming, and c1 > c2.

5. The method according to claim 2, characterized in that, The third programming voltage is determined based on the formula y5 = c1 * second difference + y0, where c1 is the first programming value and y0 is the voltage of the previous programming. The fourth programming voltage is determined based on the formula y6 = c2 * second difference + y0, where c2 is the second step value, y0 is the voltage of the previous programming, and c1 > c2.

6. A NorFlash chip reference current regulation system, characterized in that, include: The first judgment module is used to determine whether the initial current of the NorFlash chip is less than the target current; The erase module is used to coarsely adjust the current of the NorFlash chip when the initial current of the NorFlash chip is less than the target current: the erase operation is performed on the NorFlash chip based on the erase voltage until the current of the NorFlash chip after the erase operation is greater than the target current, and then fine adjustment is performed by programming operation; The programming module is used to program the NorFlash chip based on the initial programming voltage to obtain the first current of the NorFlash chip after the initial programming operation. A first calculation module is used to calculate a first difference between the first current and the target current; The second judgment module is used to determine whether the first difference is greater than a preset value; The programming module is also used to program the NorFlash chip based on the first programming voltage when the first difference is greater than a preset value, so as to use a large step for programming. The programming module is further configured to perform programming operations on the NorFlash chip based on the second programming voltage when the first difference is less than a preset value, so as to perform programming operations using a large step size.

7. The system according to claim 6, characterized in that, The programming module is also used for: When the initial current of the NorFlash chip is greater than the target current, the NorFlash chip is programmed based on the initial programming voltage to obtain the second current of the NorFlash chip after the first programming operation. The system also includes: The second calculation module is used to calculate the second difference between the second current and the target current; The third judgment module is used to determine whether the second difference is greater than the preset value; The programming module is further configured to perform a programming operation on the NorFlash chip based on a third programming voltage when the second difference is greater than the preset value; The programming module is further configured to perform programming operations on the NorFlash chip based on a fourth programming voltage when the second difference is less than the preset value.

8. The system according to claim 6, characterized in that, The erasure voltage is determined based on the formula y1=a1(x1-1)+b1, where y1 is the erasure voltage, a1 is the first parameter value, x1 is the number of erasures, and b1 is the starting voltage; The initial programming voltage is based on the formula y2 = a2x2 + b2, where y2 is the initial programming voltage, a2 is the second parameter value, x2 is the target current, and b2 is the third parameter value.

9. The system according to claim 6, characterized in that, The first programming voltage is determined based on the formula y3 = c1 * first difference + y0, where c1 is the first programming value and y0 is the voltage of the previous programming. The second programming voltage is determined based on the formula y4 = c2 * first difference + y0, where c2 is the second step value, y0 is the voltage of the previous programming, and c1 > c2.

10. The system according to claim 7, characterized in that, The third programming voltage is determined based on the formula y5 = c1 * second difference + y0, where c1 is the first programming value and y0 is the voltage of the previous programming. The fourth programming voltage is determined based on the formula y6 = c2 * second difference + y0, where c2 is the second step value, y0 is the voltage of the previous programming, and c1 > c2.

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