Plasma treatment method

By forming a conductive protective film on the inner wall of the chamber, the problem of damage to the inner wall of the chamber during plasma processing is solved, and the process is stabilized and the components are protected.

CN113380599BActive Publication Date: 2025-09-23TOKYO ELECTRON LTD
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Patent Information

Application Number
CN202110189883.5
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2020-02-25
Filing Date
2021-02-18
Publication Date
2025-09-23
Estimated Expiration
2041-02-18

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Abstract

The present invention relates to a plasma processing method. [Subject] Suppressing the consumption of components in a chamber and achieving process stabilization. [Solution] A plasma processing method, which is a plasma processing method for performing plasma processing on a substrate, comprising the following steps: a step of converting a first gas containing carbon and hydrogen into plasma in a chamber, thereby coating the surface of a component in the chamber with a conductive film; a step of carrying a substrate into the chamber; and a step of converting a second gas into plasma in the chamber while the surface of the component in the chamber is coated with a conductive film, thereby processing the substrate.
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Citation Information

Patent Citations

  • Plasma processing method

    JP2016086046A

  • Plasma etching device having conductive coating designed to protect from chemi- cal corrosion on inner metal surface in chamber and formation method

    JP1992229619A

  • Plasma processing method and plasma processing device

    JP2018133483A