Calibration method for multiple chamber pressure sensors

Abstract

A method of calibrating a plurality of chamber pressure sensors is provided. In a method of calibrating a plurality of chamber pressure sensors of a substrate processing system, the substrate processing system is provided with a plurality of chambers and a plurality of chamber pressure sensors arranged to measure pressures in the plurality of chambers, respectively. The plurality of chamber pressure sensors are calibrated by comparing, for all of the chamber pressure sensors, a measured value of a rate of change of pressure of a chamber generated by flowing a gas at a predetermined flow rate to the chamber, measured by the chamber pressure sensor, with a calculated value of the rate of change of pressure of the chamber calculated by treating the gas at the flow rate as an ideal gas. In calculating the rate of change of pressure of the chamber, a volume of a plurality of gas flow paths of the substrate processing system is used in the calculation, and the volume of the gas flow path is calculated in advance by using a pressure measurement value of the gas flow path and treating the gas as an ideal gas.

Description

TECHNICAL FIELD

[0001] An exemplary embodiment of the present disclosure relates to a calibration method of a plurality of chamber pressure sensors. BACKGROUND

[0002] A substrate processing system is used in manufacturing of electronic devices. The substrate processing system has a plurality of chambers. When a substrate processing is performed, a gas is supplied into a chamber in a state where the substrate is arranged in the chamber. A pressure in the chamber affects a result of the substrate processing. Thus, a chamber pressure sensor is used to measure the pressure in the chamber. A state of the chamber pressure sensor can change over time. Thus, it is necessary to calibrate the chamber pressure sensor. A technique related to the calibration of the chamber pressure sensor is disclosed in Patent Literature 1.

[0003] Prior art documents

[0004] Patent documents

[0005] Patent Literature 1: Japanese Patent Application Publication No. 2010-251464 SUMMARY

[0006] Problem to be solved by the invention

[0007] A substrate processing system has a plurality of chambers and a plurality of chamber pressure sensors. Each chamber pressure sensor of the plurality of chamber pressure sensors is provided to a corresponding chamber of the plurality of chambers. The present disclosure provides a technique for reducing machine variation of the plurality of chamber pressure sensors provided in the substrate processing system.

[0008] Solution to the problem

[0009] In one illustrative embodiment, a method of calibrating a plurality of chamber pressure sensors of a substrate processing system is provided. The substrate processing system has a plurality of chambers, a plurality of chamber pressure sensors, a plurality of gas supply portions, a plurality of exhaust devices, and a plurality of first gas flow paths. The plurality of chamber pressure sensors are provided so as to measure pressures in the plurality of chambers, respectively. Each of the plurality of gas supply portions is configured to supply a gas to an inner space of a corresponding one of the plurality of chambers. The plurality of exhaust devices are connected to the inner spaces of the plurality of chambers via a plurality of exhaust flow paths, respectively. Each of the plurality of first gas flow paths connects a corresponding one of the plurality of gas supply portions and a corresponding one of the plurality of chambers. The method includes a process of acquiring a third volume, a process of acquiring a first pressure change rate, a process of calculating a second pressure change rate, and a process of calibrating a chamber pressure sensor. In the process of acquiring the third volume, a first volume and a second volume are added to acquire the third volume. The first volume is a volume of a first gas flow path selected from the plurality of first gas flow paths and connected to a gas supply portion selected from the plurality of gas supply portions. The second volume is a volume of an inner space of a chamber selected from the plurality of chambers and connected to the selected first gas flow path. In the process of acquiring the first pressure change rate, the first pressure change rate is acquired using a chamber pressure sensor selected from the plurality of chamber pressure sensors and used for the selected chamber. In the process of acquiring the first pressure change rate, the first pressure change rate of the inner space of the selected chamber is acquired by flowing a gas at a flow rate set in advance from the selected gas supply portion to the inner space of the selected chamber via the selected first gas flow path. In the process of calculating the second pressure change rate, the flow rate of the gas flowed in the process of acquiring the first pressure change rate and the first volume are used. In the process of calculating the second pressure change rate, the gas flowed in the process of acquiring the first pressure change rate is regarded as an ideal gas. In the process of calculating the second pressure change rate, the second pressure change rate of the inner space of the selected chamber caused by the gas flowed in the process of acquiring the first pressure change rate is calculated. In the process of calibrating the chamber pressure sensor, the selected chamber pressure sensor is calibrated so that a difference between the first pressure change rate and the second pressure change rate is within a range set in advance. In the method, a sequence including the process of acquiring the third volume, the process of acquiring the first pressure change rate, the process of acquiring the second pressure change rate, and the process of calibrating the chamber pressure sensor is repeatedly performed. In the method, the plurality of chamber pressure sensors are sequentially selected as the selected chamber pressure sensor and the sequence is repeatedly executed.

[0010] Effects of the invention

[0011] According to the present disclosure, it is possible to provide a technique for reducing machine variation of a plurality of chamber pressure sensors provided in a substrate processing system. Attached Figure Description

[0012] Figure 1 This is a flowchart of a calibration method for multiple chamber pressure sensors of a substrate processing system according to an exemplary embodiment.

[0013] Figure 2 It is a summary example of execution. Figure 1 The flowchart shown is a diagram of the structure of the substrate processing system.

[0014] Figure 3 It means Figure 1 The flowchart for an example of process ST1 is shown.

[0015] Figure 4 It means Figure 3 The flowchart for an example of process ST11 is shown.

[0016] Figure 5 It means Figure 3 The flowchart for an example of process ST12 is shown.

[0017] Figure 6 It means Figure 3 The flowchart for an example of process ST13 is shown.

[0018] Reference signs list

[0019] 10: Substrate processing system; 12: Chamber; 13: Chamber pressure sensor; 14: Gas supply unit; 16: Exhaust device; 17: Housing; 18: Flow controller; 19: Primary valve; 20: Secondary valve; 21: First gas flow path; 22: Valve; 24: Distribution flow path group; 24a: Distribution flow path; 26: Valve; 27: Flow controller; 28: Primary valve; 29: Secondary valve; 32: Pressure control valve; 34: Turbomolecular pump; 36: Exhaust flow path; 38: Valve; 40: Fifth gas flow path; 42: Second gas flow path; 43: Third gas flow path; 47: Pressure sensor; 48: Pressure sensor; 49: Temperature sensor; 51: Valve; 52: Valve; 58: Valve; 60: Fourth gas flow path; CU: Control unit; FS: Flow divider; IU: Gas injection unit; ME: Measuring device; MT: Method. Detailed Implementation

[0020] Next, various exemplary embodiments will be described. In one exemplary embodiment, a method of calibrating a plurality of chamber pressure sensors of a substrate processing system is provided. The substrate processing system has a plurality of chambers, a plurality of chamber pressure sensors, a plurality of gas supply portions, a plurality of exhaust devices, and a plurality of first gas flow paths. The plurality of chamber pressure sensors are respectively provided so as to measure pressures in the plurality of chambers. Each of the plurality of gas supply portions is configured to supply a gas to an inner space of a corresponding one of the plurality of chambers. The plurality of exhaust devices are respectively connected to the inner spaces of the plurality of chambers via a plurality of exhaust flow paths. Each of the plurality of first gas flow paths connects a corresponding one of the plurality of gas supply portions and a corresponding one of the plurality of chambers. The method includes a process of acquiring a third volume, a process of acquiring a first pressure change rate, a process of calculating a second pressure change rate, and a process of calibrating a chamber pressure sensor. In the process of acquiring the third volume, a first volume and a second volume are added to acquire the third volume. The first volume is a volume of a first gas flow path selected from the plurality of first gas flow paths and connected to a gas supply portion selected from the plurality of gas supply portions. The second volume is a volume of an inner space of a chamber selected from the plurality of chambers and connected to the selected first gas flow path. In the process of acquiring the first pressure change rate, the first pressure change rate is acquired using a chamber pressure sensor selected from the plurality of chamber pressure sensors and used for the selected chamber. In the process of acquiring the first pressure change rate, the first pressure change rate of the inner space of the selected chamber is acquired by causing a gas at a flow rate set in advance to flow from the selected gas supply portion to the inner space of the selected chamber via the selected first gas flow path. In the process of calculating the second pressure change rate, the flow rate of the gas flowing in the process of acquiring the first pressure change rate and the first volume are used. In the process of calculating the second pressure change rate, the gas flowing in the process of acquiring the first pressure change rate is regarded as an ideal gas. In the process of calculating the second pressure change rate, the second pressure change rate of the inner space of the selected chamber caused by the gas flowing in the process of acquiring the first pressure change rate is calculated. In the process of calibrating the chamber pressure sensor, the selected chamber pressure sensor is calibrated so that a difference between the first pressure change rate and the second pressure change rate is within a range set in advance. In the method, a sequence including the process of acquiring the third volume, the process of acquiring the first pressure change rate, the process of acquiring the second pressure change rate, and the process of calibrating the chamber pressure sensor is repeatedly performed. In the method, the plurality of chamber pressure sensors are sequentially selected as the selected chamber pressure sensor, and the sequence is repeatedly executed.

[0021] For all of the chamber pressure sensors, the measured value of the rate of change of pressure in the chamber resulting from the flowing of the gas into the chamber is compared with the calculated value of the rate of change of pressure in the chamber when the gas is treated as an ideal gas. By making this comparison, all of the chamber pressure sensors can be easily calibrated.

[0022] In one illustrative embodiment, the substrate processing system further includes a second gas flow path, a measurement device, and a plurality of fourth gas flow paths. The second gas flow path is connected to each of the first gas flow paths via each of the plurality of gas supply portions. The measurement device is connected to the second gas flow path. The measurement device includes a third gas flow path and a pressure sensor. The third gas flow path is connected to the second gas flow path. The pressure sensor is configured to detect a pressure in the third gas flow path. Each of the plurality of fourth gas flow paths includes a corresponding one of the plurality of first gas flow paths, the second gas flow path, and the third gas flow path. The obtaining the third volume includes obtaining a fourth volume, obtaining the second volume, and obtaining the first volume. In the obtaining the second volume, the fourth volume of the selected fourth gas flow path obtained in the obtaining the fourth volume is used. In the obtaining the first volume, the fourth volume of the selected fourth gas flow path obtained in the obtaining the fourth volume is used. The fourth volume is a volume of the fourth gas flow path including the selected first gas flow path selected from the plurality of fourth gas flow paths.

[0023] In one illustrative embodiment, the process of acquiring the fourth volume includes a process of acquiring a first pressure measurement, a process of evacuating the selected first gas flow path and the second gas flow path, a process of acquiring a second pressure measurement, and a process of calculating the fourth volume. In the process of acquiring the first pressure measurement, the first pressure measurement of the gas diffused to the third gas flow path is acquired using the pressure sensor in a state where the gas is diffused to the third gas flow path. In the process of evacuating the selected first gas flow path and the second gas flow path, the selected first gas flow path and the second gas flow path included in the selected fourth gas flow path are evacuated using the exhaust device corresponding to the selected fourth gas flow path selected from among the plurality of exhaust devices. In the process of acquiring the second pressure measurement, the second pressure measurement of the gas diffused to the selected fourth gas flow path is acquired in a state where the gas diffused to the third gas flow path in the process of acquiring the first pressure measurement is diffused to the selected fourth gas flow path including the third gas flow path. In the process of acquiring the second pressure measurement, the second pressure measurement of the gas diffused to the selected fourth gas flow path is acquired using the pressure sensor. In the process of calculating the fourth volume, the first pressure measurement, the second pressure measurement, and the predetermined value of the fifth volume of the third gas flow path are used. In the process of calculating the fourth volume, the gas diffused to the third gas flow path in the process of acquiring the first pressure measurement and the gas diffused to the selected fourth gas flow path in the process of acquiring the second pressure measurement are regarded as an ideal gas, and the fourth volume is calculated.

[0024] In one illustrative embodiment, the process of acquiring the second volume includes a process of acquiring a leak rate and a process of evacuating the interior space of the selected chamber. The process of acquiring the second volume also includes a process of acquiring a third pressure measurement value, a process of acquiring a fourth pressure measurement value, and a process of calculating the second volume. In the process of acquiring the leak rate, the leak rate of the selected chamber is acquired using the selected chamber pressure sensor. In the process of evacuating the interior space of the selected chamber, the interior space of the selected chamber is evacuated using the selected exhaust device corresponding to the selected chamber from among the plurality of exhaust devices. In the process of acquiring the third pressure measurement value, the third pressure measurement value of the gas diffused to the selected fourth gas flow path is acquired using the pressure sensor in a state where the gas is diffused to the selected fourth gas flow path. In the process of acquiring the fourth pressure measurement value, the gas diffused to the selected fourth gas flow path in the process of acquiring the third pressure measurement value is diffused to the selected fourth gas flow path and the interior space of the selected chamber. In the process of acquiring the fourth pressure measurement value, the fourth pressure measurement value of the gas diffused to the selected fourth gas flow path and the interior space of the selected chamber is acquired using the pressure sensor after a first length of time elapses until the pressure detected by the pressure sensor stabilizes. In the process of calculating the second volume, the third pressure measurement value, the fourth pressure measurement value, the fourth volume, the leak rate, and the first length of time are used. In the process of calculating the second volume, the gas diffused to the selected fourth gas flow path in the process of acquiring the third pressure measurement value is treated as an ideal gas. In the process of calculating the second volume, the gas diffused to the selected fourth gas flow path and the interior space of the selected chamber in the process of acquiring the fourth pressure measurement value is also treated as an ideal gas. In the process of calculating the second volume, the second volume is calculated by treating the gas as an ideal gas as described above.

[0025] In one illustrative embodiment, the process of acquiring the first volume includes a process of acquiring a fifth pressure measurement value, a process of evacuating the selected first gas flow path, a process of acquiring a sixth pressure measurement value, and a process of calculating the first volume. In the process of acquiring the fifth pressure measurement value, in a state where gas is diffused to a fifth gas flow path including the second gas flow path and the third gas flow path, the fifth pressure measurement value of the gas diffused to the fifth gas flow path is acquired using the pressure sensor. In the process of evacuating the selected first gas flow path, the selected first gas flow path is evacuated using the exhaust device corresponding to the selected chamber, selected from among the plurality of exhaust devices. In the process of acquiring the sixth pressure measurement value, the gas diffused to the fifth gas flow path in the process of acquiring the fifth pressure measurement value is diffused to a fourth gas flow path including the fifth gas flow path, selected. In the process of acquiring the sixth pressure measurement value, after the pressure detected by the pressure sensor is stabilized, the sixth pressure measurement value of the gas diffused to the selected fourth gas flow path is acquired using the pressure sensor. In the process of calculating the first volume, the fifth pressure measurement value, the sixth pressure measurement value, and the fourth volume are used. In the process of calculating the first volume, the gas diffused to the fifth gas flow path in the process of acquiring the fifth pressure measurement value and the gas diffused to the selected fourth gas flow path in the process of acquiring the sixth pressure measurement value are regarded as ideal gas, and the first volume is calculated.

[0026] In one illustrative embodiment, the process of acquiring the first volume is executed after the process of acquiring the second volume, and the fourth pressure measurement value is used as the fifth pressure measurement value.

[0027] In one illustrative embodiment, the process of acquiring the second volume is executed after the process of acquiring the first volume, and the sixth pressure measurement value is used as the third pressure measurement value.

[0028] Next, various illustrative embodiments will be described in detail with reference to the accompanying drawings. Note that the same or similar portions will be denoted by the same reference numerals in each drawing.

[0029] Figure 1 is a flowchart of a calibration method (Method MT) of a plurality of chamber pressure sensors of a substrate processing system according to one illustrative embodiment. The Method MT is executed by the substrate processing system 10. Figure 1 The Method MT shown is a method of calibrating a plurality of chamber pressure sensors of a substrate processing system. Figure 2 is a diagram schematically illustrating a structure of a substrate processing system that executes the flowchart shown. Figure 1 The substrate processing system 10 shown is a substrate processing system that is capable of executing the Method MT shown. Figure 2 The substrate processing system 10 shown is a substrate processing system that is capable of executing the Method MT shown. Figure 1 The substrate processing system 10 shown is a substrate processing system that is capable of executing the Method MT shown.

[0030] In one embodiment, the substrate processing system 10 is provided with a plurality of chambers 12, a plurality of chamber pressure sensors 13, a plurality of gas supply portions 14, and a plurality of first gas flow paths 21. The substrate processing system 10 is provided with a plurality of pressure control valves 32, a plurality of turbo molecular pumps 34, a plurality of exhaust flow paths 36, a plurality of valves 38, a plurality of valves 58, and a plurality of exhaust devices 16. The substrate processing system 10 can also be provided with a plurality of flow splitters FS and a plurality of gas injection portions IU.

[0031] In the substrate processing system 10, the number of the plurality of chambers 12, the number of the plurality of chamber pressure sensors 13, the number of the plurality of gas supply portions 14, the number of the plurality of first gas flow paths 21, and the number of the plurality of flow splitters FS are N. In the substrate processing system 10, the number of the plurality of pressure control valves 32, the number of the plurality of turbo molecular pumps 34, the number of the plurality of exhaust flow paths 36, the number of the plurality of valves 38, the number of the plurality of valves 58, and the number of the plurality of exhaust devices 16 are N. In the substrate processing system 10, the number of the plurality of gas injection portions IU can be N. “N” is an integer of 2 or more.

[0032] In the following description, in the case where one of N elements of the substrate processing system 10 is referred to, a subscript “n” is added to the end of a reference sign that represents the element. For example, in the case where one of the plurality of (N) chambers 12 is referred to, a reference sign “12n” is used. Here, “n” is an integer of 1 or more and N or less. n

[0033] The substrate processing system 10 is provided with a plurality of process modules. Each process module of the plurality of process modules includes a chamber 12 n , a chamber pressure sensor 13 n , a gas supply portion 14 n , a pressure control valve 32 n , a turbo molecular pump 34 n , an exhaust device 16 n , and a first gas flow path 21 n , which are included in the reference signs of the same serial number n. Each process module of the plurality of process modules can also include a flow splitter FS n and a gas injection portion IU n , which are included in the reference signs of the same serial number n.

[0034] Each chamber 12 of the plurality of chambers 12 provides an internal space. Each chamber 12 of the plurality of chambers 12 is configured to accommodate a substrate in the internal space thereof.

[0035] The plurality of chamber pressure sensors 13 are configured to measure pressures in the respective chambers 12 of the plurality of chambers 12 (gas pressures in the internal spaces of the respective chambers). That is, the chamber pressure sensor 13 n ​The pressure of the internal space of the chamber 12 n (the gas pressure in the internal space of the chamber 12 n ) is measured.

[0036] Each of the plurality of gas supply portions 14 is configured to supply gas to the internal space of the corresponding chamber of the plurality of chambers 12. That is, the gas supply portion 14 n is configured to supply gas to the internal space of the chamber 12 n .

[0037] Each of the plurality of gas supply portions 14 has one or more flow controllers, one or more primary valves, and one or more secondary valves. In one embodiment, each of the plurality of gas supply portions 14 has a plurality of flow controllers 18, a plurality of primary valves 19, and a plurality of secondary valves 20 and 22. Each of the plurality of gas supply portions 14 can also have a housing 17.

[0038] In one embodiment, the number of flow controllers 18, the number of primary valves 19, and the number of secondary valves 20 of each of the plurality of gas supply portions 14 are M. "M" is an integer of 2 or more.

[0039] Further, in the following description, in the case where one of the M elements of the substrate processing system 10 is referred to, a subscript "m" is added to the end of the reference sign that represents the element. For example, in the case where one of the plurality of (M) flow controllers 18 is referred to, the reference sign "18 m " is used. Here, "m" is an integer of 1 or more and M or less.

[0040] In each of the plurality of gas supply portions 14, the plurality of flow controllers 18, the plurality of primary valves 19, and the plurality of secondary valves 20 are housed in the housing 17. Each of the plurality of flow controllers 18 is a mass flow controller or a pressure control type flow controller. Each of the plurality of primary valves 19 is connected to the primary side of the plurality of flow controllers 18. Each of the plurality of primary valves 19 is connected to the corresponding gas source provided on the primary side (upstream side) thereof. Each of the plurality of secondary valves 20 is connected to the secondary side of the plurality of flow controllers 18.

[0041] Each of the plurality of first gas flow paths 21 connects the corresponding gas supply portion of the plurality of gas supply portions 14 and the internal space of the corresponding chamber of the plurality of chambers 12. That is, the first gas flow path 21 n connects the gas supply portion 14 n and the internal space of the chamber 12.

[0042] Each of the plurality of first gas flow paths 21 includes a corresponding one of the plurality of distribution flow path groups 24. That is, the first gas flow path 21 n includes the distribution flow path group 24 n .

[0043] Each of the plurality of first gas flow paths 21 is connected to an inner space of a corresponding one of the plurality of chambers 12 via a corresponding one of the plurality of flow splitters FS, a corresponding one of the plurality of distribution flow path groups 24, and the plurality of valves 26. That is, the first gas flow path 21 n is connected to the inner space of the chamber 12 n via the flow splitter FS n , the distribution flow path group 24 n , and the plurality of valves 26.

[0044] Each of the plurality of first gas flow paths 21 is connected to the plurality of secondary valves 20 of a corresponding one of the plurality of gas supply portions 14. That is, the first gas flow path 21 n is connected to the secondary valve 20 n of the gas supply portion 14 n .

[0045] Each of the plurality of first gas flow paths 21 is connected to the second gas flow path 42 via the valve 22 of a corresponding one of the plurality of gas supply portions 14. That is, the first gas flow path 21 n is connected to the second gas flow path 42 via the valve 22 n of the gas supply portion 14.

[0046] Each of the plurality of flow splitters FS distributes gas supplied to an input port of the flow splitter FS via a corresponding one of the plurality of first gas flow paths 21. In other words, each of the plurality of flow splitters FS outputs, from a plurality of output ports thereof, gas supplied to an input port of the flow splitter FS via a corresponding one of the plurality of first gas flow paths 21. That is, the flow splitter FS n distributes (outputs from a plurality of output ports of the flow splitter FS n ) gas supplied to an input port of the flow splitter FS n via the first gas flow path 21 n .

[0047] Each of the plurality of distribution flow path groups 24 includes a plurality of distribution flow paths. In the illustrated example, the number of the plurality of distribution flow paths is four, but is not limited thereto.

[0048] Each of the multiple distribution flow path groups 24 has multiple distribution flow paths connected in parallel between the corresponding splitter in the multiple splitters FS and the corresponding chamber in the multiple chambers 12. That is, the distribution flow path group 24 n Multiple distribution paths are connected in parallel to the splitter FS. n With chamber 12 n between.

[0049] Each distribution path in the multiple distribution path groups 24 is connected to multiple output ports of the corresponding splitter. That is, the distribution path group 24... n Multiple distribution paths and splitters FS n Multiple output ports are connected.

[0050] Gas supplied from the corresponding gas supply unit to the corresponding distributor is distributed to each of the multiple distribution flow paths in the multiple distribution flow path groups 24. Each distribution flow path in each of the multiple distribution flow path groups 24 is connected to the corresponding chamber via each of the multiple valves 26. That is, gas is distributed to the distribution flow path group 24. n Each distribution flow path group 24 n Multiple distribution flow paths are allocated from the gas supply section 14 n Supply to splitter FS n Gas. Distribution flow path group 24 n Each of the multiple distribution flow paths is connected to the chamber 12 via each of the multiple valves 26. n connect.

[0051] The multiple distribution flow paths of the multiple distribution flow path groups 24 are arranged to supply gas to multiple different regions of the substrate disposed in corresponding chambers. In one embodiment, the multiple different regions of the substrate are multiple concentric regions, with the center of the substrate as their center.

[0052] Each of the multiple gas injection units IU is connected to a distribution path (distribution path 24a in the illustrated example) of a corresponding distribution path group 24. Each of the multiple gas injection units IU is configured to inject gas into a distribution path of its corresponding distribution path group. That is, the gas injection unit IU... n With distribution flow path group 24 n The distribution path 24a is connected among the multiple distribution paths. Gas injection section IU n Configured as a distribution flow path group 24 n Gas is injected into the distribution flow path 24a.

[0053] In one embodiment, each of the plurality of gas injection units IU includes a flow controller 27, a primary valve 28, and a secondary valve 29. The primary valve 28 is connected to the primary side of the flow controller 27. The secondary valve 29 is connected to the secondary side of the flow controller 27. The flow controller 27 is connected to a gas source via the primary valve 28. The flow controller 27 is connected to a distribution path (e.g., distribution path 24a) of a corresponding distribution path group via the secondary valve 29.

[0054] Furthermore, the substrate processing system 10 may have more than N gas injection units IU. In this case, each of two or more distribution paths in each of the multiple distribution paths of the multiple distribution path groups 24 may be connected to the gas injection unit.

[0055] Each of the multiple pressure control valves 32 is, for example, an automatic pressure control valve. Pressure control valve 32 n The configuration is to adjust the corresponding chamber 12 n The pressure within the internal space.

[0056] Each of the multiple exhaust devices 16 can be, for example, a dry pump. Exhaust flow path 36 n via pressure control valve 32 n Turbomolecular pump 34 n and valve 38 n And the corresponding chamber 12 n The internal space is connected. In valve 38... n Downstream, exhaust device 16 n With exhaust flow path 36 n connect.

[0057] The substrate processing system 10 also includes a fifth gas flow path 40 and a measuring device ME. The fifth gas flow path 40 is connected to each of the plurality of first gas flow paths 21 via valves 22 of each of the plurality of gas supply sections 14. That is, the fifth gas flow path 40 is connected to each of the plurality of first gas flow paths 21 via gas supply sections 14. n Valve 22 and the first gas flow path 21 n Connection. The measuring device ME is connected to the second gas flow path 42.

[0058] In one embodiment, the fifth gas flow path 40 includes a second gas flow path 42 and a third gas flow path 43. In one embodiment, the measuring device ME includes a valve 51, a third gas flow path 43, and a valve 52.

[0059] Further, the substrate processing system 10 further includes a plurality of fourth gas flow paths 60. Each fourth gas flow path 60 of the plurality of fourth gas flow paths 60 includes the first gas flow path selected from the plurality of first gas flow paths 21 and the fifth gas flow path 40 (the second gas flow path 42 and the third gas flow path 43). The number of the plurality of fourth gas flow paths 60 is N. That is, the fourth gas flow path 60 n includes the first gas flow path 21 n and the fifth gas flow path 40.

[0060] The second gas flow path 42 is connected to each first gas flow path 21 of the plurality of first gas flow paths 21 via the valve 22 of each gas supply part 14 of the plurality of gas supply parts 14. That is, the second gas flow path 42 is connected to the first gas flow path 21 n via the valve 22 of the gas supply part 14. n

[0061] The third gas flow path 43 is connected to the second gas flow path 42 via the valve 51. The third gas flow path 43 is connected to each exhaust device 16 of the plurality of exhaust devices 16 via the valve 52, each valve 58 of the plurality of valves 58, and each exhaust flow path 36 of the plurality of exhaust flow paths 36. That is, the third gas flow path 43 is connected to the exhaust device 16 n via the valve 52, the valve 58 n and the exhaust flow path 36. n

[0062] In one embodiment, the measuring device ME further includes a pressure sensor 47, a pressure sensor 48, and a temperature sensor 49. Each of the pressure sensor 47 and the pressure sensor 48 is configured to measure the pressure in the third gas flow path 43. The temperature sensor 49 is configured to measure the temperature in the third gas flow path 43.

[0063] In one embodiment, the substrate processing system 10 can further include a control unit CU. The control unit CU can be a computer device having a processor such as a CPU, a storage device such as a memory, an input device such as a keyboard, a display device, and the like. The control unit CU causes the processor to execute a control program stored in the storage device, and controls each part of the substrate processing system 10 according to process data stored in the storage device. Further, the method MT can be implemented by controlling and calculating each part of the substrate processing system 10 by the control unit CU.

[0064] Referring again to Figure 1 , the method MT will be described in detail below. In addition, the control and calculation performed by the control unit CU for executing the method MT will be described.

[0065] ​​The method MT includes a step ST1, a step ST2, a step ST3, a step ST4, and a step ST5. The step ST1, the step ST2, the step ST3, and the step ST4 constitute a sequence SQ. The sequence SQ can be repeatedly executed according to a result of the step ST5.

[0066] First, the step ST1 is executed. In the step ST1, a third volume V3 is acquired by adding a first volume V1 to a second volume V2. The first volume V1 is a volume of the interior space of the chamber 12 n connected to the first gas flow path 21 n . The second volume V2 is a volume of the interior space of the chamber 12 n connected to the first gas flow path 21 n . The step ST1 is described in more detail hereinafter. Figure 3

[0067] In the next step ST2, a first pressure change rate R1 is acquired using the chamber pressure sensor 13 n for the chamber 12 n . The first pressure change rate R1 is a measured value of a pressure change rate of the interior space of the chamber 12 n caused by flowing the gas of a flow rate Q1 that is set in advance from the gas supply portion 14 n to the interior space of the chamber 12 n via the first gas flow path 21 n .

[0068] During the measurement of the first pressure change rate R1, the control portion CU sets the pressure control valve 32 n , the valve 38 n , and the plurality of valves 26 connected to the chamber 12 n to an open state, and sets the valve 22, the valve 51, and the valve 52 of the gas supply portion 14 n to a closed state. After that, the control portion CU starts the supply of the gas of the flow rate Q1.

[0069] After the pressure detected by the chamber pressure sensor 13 n is stabilized after the start of the supply of the gas of the flow rate Q1, the control portion CU sets the pressure control valve 32 n to a closed state, and acquires the first pressure change rate R1.

[0070] The pressure change rate can be expressed as a change value of the pressure per unit time (as well in the following description). For example, when a change value of the pressure in a period of a time length of Δt is set as ΔP, the pressure change rate is expressed by ΔP / Δt.

[0071] ​In the next step ST3, the second pressure change rate R2 is calculated. The second pressure change rate R2 is calculated using the flow rate Q1 of the gas flowing in step ST2 and the third volume V3, treating the gas flowing in step ST2 as an ideal gas, and is generated by the gas flowing in step ST2 through chamber 12. n The calculated value of the pressure change rate of the internal space. The temperature measurement value detected when measuring the second volume V2 can be used as the temperature measurement value TH.

[0072] In process ST3, the second pressure change rate R2 can be calculated using the following relationship (1) based on the ideal gas equation of state.

[0073] (1) R2=Q1×R×TH / V3.

[0074] In the next step ST4, the chamber pressure sensor 13 is... n Calibration is performed to ensure that the difference between the first pressure change rate R1 and the second pressure change rate R2 is within a preset range.

[0075] In the next step ST5, it is determined whether all chamber pressure sensors 13 have been selected. Thus, the sequence SQ, including the aforementioned steps ST1, ST2, ST3, and ST4, is repeated through step ST5. In step ST5, multiple chamber pressure sensors 13 are sequentially selected as chamber pressure sensors 13n (1≤n≤N), thereby repeating the sequence SQ.

[0076] Next, refer to Figure 3 , Figure 4 , Figure 5 as well as Figure 6 To explain Figure 1 Details of process ST1 are shown below. Figure 3 As shown, process ST1 includes processes ST11, ST12, and ST13. Furthermore, process ST12 is performed after process ST13, but it is not limited to this; process ST13 can also be performed after process ST12.

[0077] First, process ST11 is initiated, thereby enabling the execution of process ST1. In process ST11, the fourth gas flow path 60 is obtained. n The fourth volume, V4.

[0078] Reference Figure 4 Let me explain process ST11 in detail. Process ST11 includes processes ST11A, ST11B, ST11C, and ST11D.

[0079] In the process ST11A, a first pressure measurement value P1 is acquired. The first pressure measurement value P1 is a pressure measurement value of the gas diffused to the third gas flow path 43 acquired using the pressure sensor 47 and / or the pressure sensor 48 in a state where the gas is diffused to the third gas flow path 43.

[0080] To perform the process ST11A, the control unit CU brings the valves 52 and the plurality of valves 26 connected to the chamber 12 n into a closed state, and brings the valve 22 of the gas supply unit 14 n and the valve 51 into an open state to enable the gas to flow from the gas supply unit 14 n to the third gas flow path 43. Further, in the process ST11A, the gas remaining in the third gas flow path 43 before the process ST11A is performed can also be used.

[0081] In this way, the control unit CU controls the opening and closing operations of the plurality of valves 26 connected to the chamber 12 n , the valve 22 of the gas supply unit 14 n , the valve 51, and the valve 52 to perform the process ST11A. Also, the control unit CU can control the supply operation of the supply gas of the gas supply unit 14 n .

[0082] In the next process ST11B, the first gas flow path 21 n and the second gas flow path 42 are evacuated using the exhaust device 16 n .

[0083] To perform the process ST11B, the control unit CU brings the plurality of secondary valves 20 of the gas supply unit 14 n , the valve 51, and the valve 52 into a closed state, and brings the valve 22 of the gas supply unit 14 n , the plurality of valves 26 connected to the chamber 12 n , and the pressure control valve 32 n into an open state.

[0084] In this way, the control unit CU controls the opening and closing operations of the valve 22 of the gas supply unit 14 n , the plurality of secondary valves 20, the plurality of valves 26 connected to the chamber 12 n , the pressure control valve 32 n , the valve 51, and the valve 52 to perform the process ST11B.

[0085] In the next process ST11C, a second pressure measurement value P2 is acquired. The second pressure measurement value P2 is a pressure measurement value of the gas diffused to the fourth gas flow path 60 nthe pressure measured value of the gas diffused to the fourth gas flow path 60 n of the gas flow path 43.

[0086] To execute the process ST11C, the control section CU brings the plurality of secondary valves 20 of the gas supply section 14 n , the plurality of valves 26 connected to the chamber 12 n , and the valve 52 into a closed state, and brings the valve 22 of the gas supply section 14 n and the valve 51 into an open state. In this way, the control section CU controls the opening and closing actions of the plurality of valves 26 connected to the chamber 12 n , the valve 22 of the gas supply section 14 n , the plurality of secondary valves 20, the valve 51, and the valve 52 to execute the process ST11C.

[0087] In the next process ST11D, the fourth volume V4 is calculated. In calculating the fourth volume V4, the first pressure measured value P1, the second pressure measured value P2, and the predetermined value V5 of the fifth volume of the third gas flow path 43 are used. In calculating the fourth volume V4, the gas diffused to the third gas flow path 43 in the process ST11A and the gas diffused to the fourth gas flow path 60 n in the process ST11B are regarded as ideal gas. In calculating the fourth volume V4, the following relational expression (2) based on the Boyle-Charles law is used.

[0088] (2) P1 x V5 = P2 x V4.

[0089] The fourth volume V4 is calculated by the relational expression: V4 = P1 x V5 / P2 obtained from the relational expression (2).

[0090] Returning to Figure 3 for explanation. In the process ST12 executed after the process ST11, the second volume V2 of the chamber 12 n is acquired.

[0091] The process ST12 is explained in detail with reference to Figure 5 . The process ST12 includes a process ST12A, a process ST12B, a process ST12C, a process ST12D, and a process ST12E.

[0092] In the process ST12A, the leakage rate LR of the chamber 12 n is acquired using the chamber pressure sensor 13 n . The leakage rate LR is expressed by the pressure change per unit time in the chamber 12 n in the sealed state.

[0093] To execute the process ST12A, the control section CU brings the plurality of valves 26 connected to the chamber 12 n and the pressure control valve 32 into the closed state. n

[0094] In this way, the control section CU controls the opening and closing actions of the plurality of valves 26 connected to the chamber 12 n and the pressure control valve 32 n to execute the process ST12A.

[0095] In the next process ST12B, the exhaust device 16 n is used to evacuate the inside space of the chamber 12 n .

[0096] To execute the process ST12B, the control section CU brings the plurality of valves 26 connected to the chamber 12 n into the closed state, and brings the pressure control valve 32 n into the open state.

[0097] In this way, the control section CU controls the opening and closing actions of the plurality of valves 26 connected to the chamber 12 n , the pressure control valve 32 n to execute the process ST12B.

[0098] In the next process ST12C, in a state where the gas is diffused to the fourth gas flow path 60 n , the third pressure measurement value P3 of the gas diffused to the fourth gas flow path 60 n is acquired using the pressure sensor 47 and / or the pressure sensor 48.

[0099] To execute the process ST12C, the control section CU brings the plurality of valves 26 connected to the chamber 12 n and the valve 52 into the closed state, and brings the valve 22 and the valve 51 of the gas supply section 14 n into the open state. Also, to execute the process ST12C, the control section CU can cause the gas to flow from the gas supply section 14 n to the fourth gas flow path 60 n . Further, in the process ST12C, the gas remaining in the fourth gas flow path 60 n before the process ST12C is executed can also be used.

[0100] In this way, the control section CU controls the opening and closing actions of the valve 22, the plurality of valves 26 connected to the chamber 12 n , the valve 52, and the valve 51 to execute the process ST12C. Also, the control section CU can control the supply action of the supply gas of the gas supply section 14 n . ​

[0101] In the next step ST12D, the fourth pressure measurement value P4 is obtained. In step ST12D, firstly, the gas diffused into the fourth gas flow path 60 in step ST12C is... n The gas diffuses into the fourth gas flow path 60 n and chamber 12 n The internal space. Then, after a first time length Δt1 until the pressure detected by pressure sensor 47 and / or pressure sensor 48 stabilizes, the pressure sensor is used to obtain the diffusion to the fourth gas flow path 60. n and chamber 12 n The fourth pressure measurement value P4 of the gas in the internal space.

[0102] In order to execute process ST12D, the control unit CU activates pressure control valve 32. n It becomes a closed state, making it compatible with chamber 12 n The connected valves 26 are in the open state.

[0103] Like this, the control unit CU controls the pressure control valve 32 n and with chamber 12 n The opening and closing actions of the multiple connected valves 26 are used to perform the process ST12D.

[0104] In the subsequent process ST12E, the second volume V2 is calculated. During the calculation of the second volume V2, the third pressure measurement P3, the fourth pressure measurement P4, the fourth volume V4, the leakage rate LR, and Δt1 are used. During the calculation of the second volume V2, the gas will also diffuse into the fourth gas flow path 60 in process ST12C. n The gas diffuses into the fourth gas flow path 60 in process ST12D. n and chamber 12 n The gas inside the space is considered an ideal gas. In calculating the second volume V2, the following relationship (3) based on Boyle-Charlie's law is used.

[0105] (3) P3×V4=P4×(V4+V2)-LR×Δt1×V2.

[0106] The second volume V2 is calculated using the relation V2 = (P3-P4) × V4 / (P4-LR × Δt1) obtained from relation (3).

[0107] Return again Figure 3 Explanation follows. In step ST13, which is executed after step ST12, the first gas flow path 21 is obtained. n The first volume V1.

[0108] Reference Figure 6The process ST13 will be described in detail. The process ST13 includes a process ST13A, a process ST13B, a process ST13C, and a process ST13D.

[0109] In the process ST13A, the fifth pressure measurement value P5 of the gas diffused to the fifth gas flow path 40 is acquired using the pressure sensor 47 and / or the pressure sensor 48 in a state where the gas is diffused to the fifth gas flow path 40 including the second gas flow path 42 and the third gas flow path 43.

[0110] The control unit CU brings the valve 22 of the gas supply unit 14 n connected to the chamber 12 n , and the valve 52 into a closed state, and brings the valve 22 of the gas supply unit 14 n , and the valve 51 into an open state, to execute the process ST13A. Also, the control unit CU can cause a gas of a preset amount to flow from the gas supply unit 14 n to the fifth gas flow path 40 to execute the process ST13A. Further, in the process ST13A, a gas remaining in the fifth gas flow path 40 before the process ST13A is executed can also be used.

[0111] In this way, the control unit CU controls the opening and closing actions of the valve 22, the plurality of valves 26 connected to the chamber 12 n , the valve 52, and the valve 51 to execute the process ST13A. Also, the control unit CU can control the gas supply action of the gas supply unit 14 n .

[0112] In the next process ST13B, the exhaust device 16 n is used to perform vacuuming on the first gas flow path 21 n .

[0113] The control unit CU brings the valve 22 of the gas supply unit 14 n and the plurality of secondary valves 20 into a closed state, and brings the plurality of valves 26 connected to the chamber 12 n , and the pressure control valve 32 n into an open state, to execute the process ST13B.

[0114] In this way, the control unit CU controls the opening and closing actions of the valve 22 of the gas supply unit 14 n , the plurality of secondary valves 20, the plurality of valves 26 connected to the chamber 12 n , and the pressure control valve 32 n to execute the process ST13B.

[0115] In the next process ST13C, the gas diffused to the fifth gas flow path 40 in the process ST13A is diffused to the fourth gas flow path 60 nIn the process ST13C, further, after the pressure detected by the pressure sensor 47 and / or the pressure sensor 48 is stabilized, the pressure sensor is used to acquire a sixth pressure measurement value P6 of the gas diffused to the fourth gas flow path 60 n . The sixth pressure measurement value P6 is acquired by the pressure sensor 47 and / or the pressure sensor 48.

[0116] The control unit CU causes the valve 22 of the gas supply unit 14 n and the valve 51 to be in an open state, and causes the plurality of valves 26 connected to the chamber 12 n , the plurality of secondary valves 20, and the valve 52 to be in a closed state, to execute the process ST13C.

[0117] In this way, the control unit CU controls the opening and closing operations of the valve 22 of the gas supply unit 14 n , the plurality of secondary valves 20, the plurality of valves 26 connected to the chamber 12 n , the valve 51, and the valve 52, to execute the process ST13C.

[0118] In the next process ST13D, the first volume VI is calculated. In calculating the first volume VI, the fifth pressure measurement value P5, the sixth pressure measurement value P6, and the fourth volume V4 are used. In calculating the first volume VI, the gas diffused to the fifth gas flow path 40 in the process ST13A and the gas diffused to the fourth gas flow path 60 n in the process ST13C are also regarded as ideal gases. In calculating the first volume VI, the following relational expression (4) based on the Boyle-Charles law is used.

[0119] (4) P5 x (V4 - VI) = P6 x V4.

[0120] The first volume VI is calculated by the relational expression: VI = (P5 - P6) x V4 / P5, which is derived from the relational expression (4).

[0121] According to the method MT related to one illustrative embodiment, the measurement value of the first pressure change rate Rl of the chamber 12 n generated by causing the gas of the flow rate Ql set in advance to flow to the chamber 12 n is obtained (actually measured) by the chamber pressure sensor 13 n . Also, the calculation value of the second pressure change rate R2 of the chamber 12 n is acquired by regarding the gas of the flow rate Ql as an ideal gas. The measurement value of the first pressure change rate Rl and the calculation value of the second pressure change rate R2 are compared for all of the chamber pressure sensors 13 of the plurality of chamber pressure sensors 13, whereby the plurality of chamber pressure sensors 13 nPerform calibration.

[0122] Furthermore, regarding the first gas flow path 21 required for calculating the second pressure change rate R2... n The first volume V1 and chamber 12 n The second volume V2 of the internal space is obtained using pressure measurements (actual measured values) obtained by pressure sensor 47 and / or pressure sensor 48. Pressure sensor 47 and pressure sensor 48 are disposed in chamber 12. n Chamber pressure sensor 13 n They are arranged differently in the third gas flow path 43. Therefore, the impact of aging degradation on the pressure measurement values ​​obtained by pressure sensor 47 and / or pressure sensor 48 is relatively small, and the first volume V1 and the second volume V2 obtained based on such pressure measurement values ​​can be used as the actual volume values ​​during measurement. The calculated value of the second pressure change rate R2 obtained using the first volume V1 and the second volume V2 obtained in this way can be used as the value of the chamber 12. n The actual rate of change of pressure during the measurement.

[0123] Various exemplary embodiments have been described above, but the implementation is not limited to these exemplary embodiments. Various omissions, substitutions, and modifications can be made. Furthermore, elements of different exemplary embodiments can be combined to form other exemplary embodiments.

[0124] For example, if step ST13 to obtain the first volume V1 is performed after step ST12 to obtain the second volume V2, the fourth pressure measurement value P4 obtained by step ST12D can be used as the fifth pressure measurement value P5 obtained by step ST13A.

[0125] Alternatively, for example, if step ST12 to obtain the second volume V2 is performed after step ST13 to obtain the first volume V1, the sixth pressure measurement value P6 obtained by step ST13C can be used as the third pressure measurement value P3 obtained by step ST12C.

[0126] Based on the above description, it should be understood that the various exemplary embodiments of this disclosure described in this specification are for illustrative purposes, allowing for various modifications without departing from the scope and spirit of this disclosure. Therefore, the various exemplary embodiments disclosed in this specification are not intended to be limiting, and the true scope and spirit are indicated by the appended claims.

Claims

1. A calibration method for multiple chamber pressure sensors, used to calibrate multiple chamber pressure sensors in a substrate processing system, wherein, The substrate processing system includes: Multiple chambers; The plurality of chamber pressure sensors are configured to measure the pressure within the plurality of chambers respectively. Multiple gas supply units, each of which is configured to supply gas to the internal space of a corresponding chamber in the plurality of chambers; Multiple exhaust devices, each of which is connected to the internal space of the multiple chambers via multiple exhaust flow paths; as well as Multiple first gas flow paths, each first gas flow path connecting a corresponding gas supply unit among the multiple gas supply units to a corresponding chamber among the multiple chambers. The calibration method for the multiple chamber pressure sensors includes the following steps: Obtain a third volume by adding the first volume and the second volume, wherein the first volume is the volume of the first gas flow path selected from the plurality of first gas flow paths and connected to the gas supply section selected from the plurality of gas supply sections, and the second volume is the volume of the internal space of the chamber selected from the plurality of chambers and connected to the selected first gas flow path; Using a chamber pressure sensor selected from the plurality of chamber pressure sensors for the selected chamber, a first pressure change rate of the selected chamber's internal space is obtained, resulting from allowing a pre-set flow rate of gas from the selected gas supply unit through the selected first gas flow path to the internal space of the selected chamber. Using the flow rate of the gas flowing in the step of obtaining the first pressure change rate and the third volume, and treating the gas flowing in the step of obtaining the first pressure change rate as an ideal gas, a second pressure change rate of the selected internal space of the chamber generated by the gas flowing in the step of obtaining the first pressure change rate is calculated; and The selected chamber pressure sensor is calibrated so that the difference between the first pressure change rate and the second pressure change rate is within a preset range. In the calibration method for the plurality of chamber pressure sensors, a sequence of steps including obtaining a third volume, obtaining a first pressure change rate, obtaining a second pressure change rate, and calibrating the chamber pressure sensors is repeatedly performed. The plurality of chamber pressure sensors are sequentially selected as the selected chamber pressure sensor and the sequence is repeated.

2. The calibration method for multiple chamber pressure sensors according to claim 1, characterized in that, The substrate processing system also includes: The second gas flow path is connected to each of the first gas flow paths of the plurality of first gas flow paths via each of the gas supply sections of the plurality of gas supply sections; A measuring device, connected to the second gas flow path, and comprising: a third gas flow path connected to the second gas flow path; and a pressure sensor configured to detect pressure within the third gas flow path; as well as Multiple fourth gas flow paths, each of the fourth gas flow paths including a corresponding first gas flow path, a second gas flow path, and a third gas flow path among the multiple first gas flow paths, wherein the step of obtaining the third volume in the method includes the following steps: Obtain the fourth volume of the fourth gas flow path selected from the plurality of fourth gas flow paths, including the selected first gas flow path; The second volume is obtained using the fourth volume of the selected fourth gas flow path obtained in the process of obtaining the fourth volume; as well as The first volume is obtained using the fourth volume of the selected fourth gas flow path obtained in the process of obtaining the fourth volume.

3. The calibration method for multiple chamber pressure sensors according to claim 2, characterized in that, The process of obtaining the fourth volume includes the following steps; With the gas diffused into the third gas flow path, the pressure sensor is used to obtain a first pressure measurement value of the gas diffused into the third gas flow path; Using the exhaust device selected from the plurality of exhaust devices that corresponds to the selected fourth gas flow path, the selected first gas flow path and the second gas flow path included in the selected fourth gas flow path are evacuated; While the gas diffused into the third gas flow path during the step of acquiring the first pressure measurement value is diffused into the selected fourth gas flow path including the third gas flow path, the pressure sensor is used to acquire a second pressure measurement value of the gas diffused into the selected fourth gas flow path; and Using the first pressure measurement value, the second pressure measurement value, and a predetermined value of the fifth volume of the third gas flow path, the gas diffused into the third gas flow path in the step of obtaining the first pressure measurement value and the gas diffused into the selected fourth gas flow path in the step of obtaining the second pressure measurement value are considered as ideal gases to calculate the fourth volume.

4. The calibration method for multiple chamber pressure sensors according to claim 2 or 3, characterized in that, The process of obtaining the second volume includes the following steps: The selected chamber pressure sensor is used to obtain the leakage rate of the selected chamber: The internal space of the selected chamber is evacuated using an exhaust device selected from the plurality of exhaust devices that corresponds to the selected chamber. With the gas diffused into the selected fourth gas flow path, the pressure sensor is used to obtain a third pressure measurement of the gas diffused into the selected fourth gas flow path; In the process of acquiring the third pressure measurement value, the gas diffuses into the selected fourth gas flow path and into the interior space of the selected chamber. After a first time length until the pressure detected by the pressure sensor stabilizes, the pressure sensor is used to acquire a fourth pressure measurement value of the gas diffused into the selected fourth gas flow path and the interior space of the selected chamber; and Using the third pressure measurement value, the fourth pressure measurement value, the fourth volume, the leakage rate, and the first time length, the gas diffused into the selected fourth gas flow path in the step of obtaining the third pressure measurement value, and the gas diffused into the selected fourth gas flow path and the internal space of the selected chamber in the step of obtaining the fourth pressure measurement value, are regarded as ideal gases to calculate the second volume.

5. The calibration method for multiple chamber pressure sensors according to claim 4, characterized in that, The process of obtaining the first volume includes the following steps: With the gas diffused into a fifth gas flow path including the second gas flow path and the third gas flow path, the pressure sensor is used to obtain a fifth pressure measurement value of the gas diffused into the fifth gas flow path; The selected first gas flow path is evacuated using an exhaust device selected from the plurality of exhaust devices that corresponds to the selected chamber; After the gas diffused into the fifth gas flow path during the process of obtaining the fifth pressure measurement value has diffused into the selected fourth gas flow path including the fifth gas flow path and the pressure detected by the pressure sensor has stabilized, the pressure sensor is used to obtain the sixth pressure measurement value of the gas diffused into the selected fourth gas flow path. as well as Using the fifth pressure measurement value, the sixth pressure measurement value, and the fourth volume, the gas diffused into the fifth gas flow path in the step of obtaining the fifth pressure measurement value and the gas diffused into the selected fourth gas flow path in the step of obtaining the sixth pressure measurement value are regarded as ideal gases to calculate the first volume.

6. The calibration method for multiple chamber pressure sensors according to claim 5, characterized in that, The process of obtaining the first volume is performed after the process of obtaining the second volume. The fourth pressure measurement value is used as the fifth pressure measurement value.

7. The calibration method for multiple chamber pressure sensors according to claim 5, characterized in that, Following the step of obtaining the first volume, the step of obtaining the second volume is performed. The sixth pressure measurement value is used as the third pressure measurement value.

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