Semiconductor process chamber, semiconductor process system and method for generating process gas flow

Abstract

A semiconductor process chamber, a semiconductor process system and a method for generating a process gas flow, the method for generating a process gas flow comprising introducing a process gas into an inner space of a process chamber through an inlet, wherein a substrate is supported in the inner space; exhausting the process gas from the inner space through an exhaust port connected to the fluid of the inner space of the process chamber by a vacuum source; and controlling the flow of the process gas established by exhausting the process gas through the vacuum source by supporting an exhaust baffle in a flow path of the process gas exhausted from the inner space through the exhaust port.

Description

Technical Field

[0001] The present invention relates to a semiconductor process chamber, a semiconductor process system and a method for generating a process gas flow. Background Art

[0002] Typically, during semiconductor manufacturing, various layers of material are formed on a substrate such as a semiconductor wafer. These layers are often patterned to form semiconductor features, such as the different elements of a transistor. Etching is a process used in semiconductor manufacturing to pattern the layers and create such features. Summary of the invention

[0003] According to some embodiments of the present disclosure, a semiconductor process chamber includes a peripheral wall extending upward from a floor to define an interior space and a substrate support seat disposed in the interior space. The process chamber includes an air inlet through which a process gas enters the interior space to be exposed to a surface of a substrate supported by the substrate support seat. The process chamber includes an exhaust port through which the process gas is removed from the interior space, wherein the exhaust port is configured to be fluidically coupled with a vacuum source to generate a vacuum that establishes a flow of the process gas on the substrate supported by the substrate support seat. The process chamber includes an exhaust baffle that is supported within a flow path of the process gas removed from the interior space through the exhaust port, wherein the exhaust baffle includes a first region that limits the flow path of the process gas toward a first direction to a first angle, and the exhaust baffle includes a second region that limits the flow path of the process gas toward the exhaust port to a second angle different from the first angle.

[0004] According to some embodiments of the present disclosure, a semiconductor process system includes a gas source for providing a process gas; a vacuum source; and a process chamber, the process chamber including a peripheral wall extending upward from a bottom plate to define an interior space; a substrate support seat disposed in the interior space; an inlet, through which the process gas enters the interior space to be exposed to the surface of the substrate supported by the substrate support seat; a vacuum opening fluidly connected to the vacuum source, wherein the vacuum source establishes a partial vacuum at the vacuum opening to establish a flow of the process gas through the process chamber; an exhaust port, through which the process gas is removed from the interior space, wherein the vacuum opening is offset from the exhaust port; and an exhaust baffle supported adjacent to the exhaust port in a flow path of a process gas removed from the interior space through the exhaust port, wherein the exhaust baffle includes a first region, the first region restricts a flow path of the process gas toward the exhaust port at a first angle, the exhaust baffle also includes a second region, the second region restricts a flow path of the process gas toward the exhaust port at a second angle different from the first angle, and wherein a portion of the first region of the exhaust baffle is vertically arranged with a portion of the vacuum opening to affect the flow of the process gas through the process chamber.

[0005] According to some embodiments of the present disclosure, a method for generating a process gas flow includes introducing a process gas into an interior space of a process chamber through a gas inlet, wherein a substrate is supported in the interior space; exhausting the process gas from the interior space through an exhaust port fluidly connected to the interior space of the process chamber by a vacuum source; and controlling the flow of the process gas established by exhausting the process gas through the vacuum source by supporting an exhaust baffle in a flow path of the process gas exhausted from the interior space through the exhaust port. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] One embodiment of the present disclosure is best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be emphasized that, in accordance with standard practice in the industry, various features are not drawn to scale and are used for illustration purposes only. In fact, the dimensions of various features may be arbitrarily increased or reduced for clarity of discussion.

[0007] Figure 1 FIG. 1 is a block diagram schematically depicting a semiconductor processing system according to some embodiments;

[0008] Figure 2 illustrates a top view of at least some of a process chamber and an adaptive pressure controller depicting movement of a sealing element to create a crescent-shaped opening according to some embodiments;

[0009] Figure 3A depicts a top view of at least some of the process chambers including an exhaust baffle extending around the entire angular extent of a curved exhaust port to restrict a flow path of etching gas to the exhaust port in accordance with some embodiments;

[0010] Figure 3B depicts a top view of at least some of the process chambers including an exhaust baffle extending around a portion of but less than the entire angular extent of a curved exhaust port to restrict a flow path of etching gas toward the exhaust port in accordance with some embodiments;

[0011] Figure 3C depicts an etch rate graph showing a relatively uniform etch rate across a substrate surface when an exhaust baffle is installed in a process chamber according to some embodiments;

[0012] Figure 4A depicts a top view of an exhaust baffle having a first region defining a first density of vents, the exhaust baffle restricting a flow path of an etching gas toward an exhaust port, according to some embodiments;

[0013] Figure 4B depicts a top view of an exhaust baffle having a first region defining a second density of vents, the exhaust baffle restricting a flow path of an etching gas toward an exhaust port, according to some embodiments;

[0014] Figure 4C A top view of an exhaust baffle according to some embodiments is shown, wherein the exhaust baffle has Figure 4B a first region of a second density of vents defined in the exhaust baffle, but extending over a different angular range of the exhaust baffle;

[0015] Figure 5 illustrates a cross-sectional view of a processing chamber that facilitates uniform etching on a substrate according to some embodiments;

[0016] Figure 6 A flow chart is shown describing a method of establishing an etching gas flow on a substrate, according to some embodiments.

[0017]

Explanation of symbols

[0018] 100:Semiconductor Processing System

[0019] 102: Processing chamber

[0020] 104: Gas source

[0021] 106: Cylinder

[0022] 108: Control valve

[0023] 110: Vacuum source

[0024] 112: Adaptive pressure controller (APC)

[0025] 114: Vacuum pump

[0026] 200:Substrate

[0027] 202:Interior Space

[0028] 204: Exhaust baffle

[0029] 206: substrate support seat

[0030] 208: Air Inlet

[0031] 210: Ring Channel

[0032] 300: Etching rate graph

[0033] 305,307: End

[0034] 308: First Area

[0035] 309: Outer edge

[0036] 310: Second Area

[0037] 311: Inner Edge

[0038] 312: Opening

[0039] 314: Shielding surface

[0040] 316: Ventilation holes

[0041] 317: First ventilation hole

[0042] 318: Dashed Line

[0043] 319: Second ventilation hole

[0044] 320: Center

[0045] 321: Third ventilation hole

[0046] 323,325:Outer wall

[0047] 329,331: Inner wall

[0048] 334,336: Ventilation holes

[0049] 400: Bottom plate

[0050] 401: Peripheral wall

[0051] 402: Exhaust port

[0052] 403: Top plate

[0053] 404: Arm

[0054] 406: Sealing element

[0055] 408: Direction

[0056] 410: Crescent opening

[0057] 500: Line

[0058] 600: Method

[0059] 602,604,606: Steps DETAILED DESCRIPTION

[0060] The embodiment content disclosed below provides many different embodiments, or examples, for implementing the different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present case. Of course, these examples are only examples and are not intended to be limiting. For example, the form of the first feature on or above the second feature in the following description may include an embodiment in which the first feature is directly contacted with the second feature, and may also include an embodiment in which additional features may be formed between the first feature and the second feature so that the first feature and the second feature may not be directly contacted. In addition, the present case may repeat element symbols and / or letters in each example. This repetition is for the purpose of simplicity and clarity, and does not itself specify the relationship between the various embodiments and / or configurations discussed.

[0061] Additionally, spatially relative terms such as "below," "beneath," "lower," "above," "upper," and the like may be used herein for descriptive purposes to describe the relationship of one element or feature to another element or feature as illustrated in the accompanying drawings. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation illustrated in the accompanying drawings. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein should likewise be interpreted accordingly.

[0062] According to some embodiments, a semiconductor process system includes a gas source for supplying etching gas to a process chamber and a vacuum source for extracting at least a portion of the etching gas from the process chamber. In some embodiments, the process chamber includes a peripheral wall extending upward from a base plate to define an internal space. A substrate support seat is disposed in the internal space to support a semiconductor substrate in a flow path of the etching gas during semiconductor manufacturing. In some embodiments, the gas inlet is fluidly connected to the gas source to allow the etching gas supplied by the gas source to enter the internal space and be exposed to the surface of the substrate supported by the substrate support seat. The exhaust port is fluidly connected to a vacuum source, which establishes a partial vacuum, which extracts at least a portion of the etching gas from the internal space of the process chamber through the exhaust port and establishes a flow of the etching gas on the substrate supported by the substrate support seat.

[0063] Etching gas is used as an example of a process gas herein, and thus the exhaust baffle is described as promoting a relatively uniform etch rate using an etching gas. However, the process gas described herein is not limited to an etching gas. Any other gaseous substance that can be introduced into a process chamber (e.g., to process a semiconductor wafer) is considered within the scope of the present disclosure.

[0064] In some embodiments, the exhaust baffle is supported within the flow path of the etching gas exhausted from the interior space through the exhaust port. The exhaust baffle changes the flow of the etching gas on the substrate supported by the substrate support. The exhaust baffle includes a first area that limits the flow path of the etching gas through the first area of ​​the exhaust baffle toward the exhaust port. The second area of ​​the exhaust baffle defines an opening that allows the etching gas to flow to the exhaust port through the second area of ​​the exhaust baffle substantially without restriction. The combination of the restricted air flow path and the substantially unrestricted air flow path changes the flow of the etching gas and promotes the uniformity of the flow pattern or flow rate of the etching gas on the substrate supported by the substrate support. For example, the first flow rate of the first part of the etching gas on the first part of the substrate is equal to or substantially equal to the second flow rate of the second part of the etching gas on the second part of the substrate. The uniform flow rate of the etching gas on the substrate promotes uniform etching on the substrate, so that one area of ​​the substrate is not etched differently than another area of ​​the substrate, or the difference in etching is small. Uniform etching or uniform etch rate across the substrate improves yield, at least because the resulting components, such as transistors, formed on the wafer behave in a similar manner, eg, with little variation in threshold voltage.

[0065] Figure 1 A block diagram schematically depicting a semiconductor processing system according to some embodiments is shown. The semiconductor processing system 100 shown includes a process chamber 102 having a peripheral wall 401 extending between a bottom plate 400 and a top plate 403 to define an interior space 202. A substrate 200 (e.g., a semiconductor wafer) is supported on a substrate support 206 in the process chamber 102 so that the substrate 200 can undergo at least some of the semiconductor manufacturing processes performed in the process chamber 102.

[0066] In some embodiments, the semiconductor manufacturing process includes an etching operation, so that the semiconductor processing system 100 includes a gas source 104 that introduces an etching gas into the process chamber 102 through the gas inlet 208. For example, the etching gas is stored in a cylinder 106, and the cylinder 106 is fluidly coupled to the process chamber 102 through a control valve 108, which regulates the flow of the etching gas from the cylinder 106 to the gas inlet 208.

[0067] In some embodiments, the semiconductor processing system 100 includes a vacuum source 110 that is fluidly coupled to the process chamber 102 through an exhaust port 402 so that the process chamber is exposed to a partial vacuum established by the vacuum source 110. The partial vacuum is generally at a pressure lower than the pressure within the interior space 202 of the process chamber 102, so that at least a portion of the etching gas moves along a flow path from the process chamber 102 through the exhaust port 402 to the vacuum source 110. The vacuum source 110 includes a vacuum pump 114, such as a turbo pump or any other suitable pump, which is operable to establish a pressure that is less than the pressure within the interior space 202 of the process chamber 102. In some embodiments, the vacuum source 110 includes an adaptive pressure controller (APC) 112 that adjusts the pressure to which the interior space 202 of the process chamber 102 is exposed via the vacuum pump 114.

[0068] According to some embodiments, the vacuum source 110 at least establishes a rough vacuum with a pressure of less than 760 Torr and as low as about 1 Torr. In some embodiments, the vacuum source 110 at least establishes a rough vacuum with a pressure of no more than 1 Torr and as low as about 1×10 -3 In some embodiments, the vacuum source 110 at least establishes a pressure no greater than 1×10 -3 Torr, as low as about 1×10 -7 Torr. In some embodiments, the vacuum source 110 at least establishes a pressure less than 1×10 -7 Torr's ultra-high vacuum.

[0069] In some embodiments, the bottom plate 400 is annular, the top plate 403 is annular, and the peripheral wall 401 is cylindrical, so that at least some of the interior space 202 is generally cylindrical. In some embodiments, the exhaust port 402 is at least partially defined by a circular hole in the bottom plate 400. In some embodiments, the adaptive pressure controller 112 includes a circular sealing element that can be selectively positioned via, for example, a pendulum or an arm to block the exhaust port 402 to varying degrees. For example, the sealing element is circular and has a diameter at least as large as the diameter of the exhaust port 402.

[0070] When the sealing element and the exhaust port 402 are misaligned such that the sealing element blocks some but not all of the exhaust port 402, a crescent-shaped opening is defined between the edge of the circular sealing element and the edge of the bottom plate 400 that defines the circular opening of the exhaust port 402. Etching gas moves from the interior space 202 to the vacuum source 110 through the crescent-shaped opening. The size of the crescent-shaped opening can be adjusted depending on the degree of misalignment between the sealing element and the exhaust port 402.

[0071] An exhaust baffle 204 is disposed proximate the exhaust port 402 to regulate the flow of etching gas from the interior space 202 to the vacuum source 110. In the absence of the exhaust baffle 204, given the size and location of the crescent-shaped opening, the etching gas will not be uniformly removed from the interior space 202 and will not flow uniformly across the substrate 200. For example, a first portion of the etching gas proximate the crescent-shaped opening will move at a first flow rate that is greater than a second flow rate of a second portion of the etching gas distal from the crescent-shaped opening.

[0072] In some embodiments, the exhaust baffle 204 is formed as an arc-shaped structure, such as an annular ring, that extends around the entire angular extent of the exhaust port 402 of the process chamber 102. The exhaust baffle 204 is cut from a sheet material, molded or otherwise formed into an arc shape, and has a depth dimension in the range of about two millimeters (2 mm) to about ten millimeters (10 mm). However, exhaust baffles 204 having depth dimensions outside of the above ranges are also within the scope of the present disclosure.

[0073] In some embodiments, the diameter of the exhaust baffle 204 is close to the diameter of the exhaust port 402, falling within the range of about forty centimeters (40 cm) to about seventy-five centimeters (75 cm). However, exhaust baffles 204 with diameters outside of the above range are also within the scope of the present disclosure. In some embodiments, the exhaust baffle 204 is formed as an arc segment that does not extend a full three hundred and sixty degrees around the central axis to form a complete ring, but extends around a portion of the exhaust port but less than the entire angular range of the exhaust port 402. Any shape of the exhaust baffle 204 is made of a non-conductive material, and its conductivity is not greater than 10 -10 Ω -1 m -1 , and during manufacturing operations, the exhaust shield 204 does not react with the plasma generated within the process chamber 102 or any other gas or other material used within the process chamber 102. Examples of non-conductive materials include, but are not limited to, polytetrafluoroethylene (“PTFE”), ceramic materials, or any other material that is inert or non-reactive with the plasma or any other substance to which the exhaust shield 204 is expected to be exposed during manufacturing operations within the process chamber 102.

[0074] The exhaust baffle 204 has a first region 308 that restricts the flow path of the etching gas toward the exhaust port at a first angle and a second region 310 that restricts the flow path of the etching gas toward the exhaust port at a second angle different from the first angle. The path of the etching gas toward the exhaust port. In some embodiments, the second angle is much smaller than the first angle, so that the etching gas flows substantially unrestricted through the second region 310 of the exhaust baffle 204, while the flow of the etching gas is restricted to some extent through the first region 308 of the exhaust baffle 204.

[0075] In some embodiments, the first region 308 defines a plurality of ventilation holes having a collective cross-sectional flow area that is smaller than the cross-sectional flow area of ​​the aperture defined by the second region 310 of the exhaust baffle 204. The exhaust baffle 204 is positioned relative to the crescent-shaped aperture such that the first region 308 and the second region 310 facilitate uniform removal of etching gas from the interior space 202, thereby uniformly flowing the etching gas across the substrate 200 to promote uniform etching of the substrate 200. Due to the orientation of the exhaust baffle 204 relative to the exhaust port 402, a first flow rate of the first portion of the etching gas over the first portion of the substrate is equal to or substantially equal to a second flow rate of the second portion of the etching gas over the second portion of the substrate.

[0076] Figure 2 A top view of at least some of the process chamber 102 and adaptive pressure controller 112 is depicted, according to some embodiments, depicting movement of the sealing element 406 to establish a crescent-shaped opening 410 as a vacuum opening through which the vacuum source 110 draws etching gas. The crescent-shaped opening 410 is offset from a central region of the process chamber 102 and the exhaust port 402 and establishes different flow rates of etching gas through different portions of the exhaust port 402. For example, a first amount of etching gas is drawn from the process chamber 102 through a first portion of the exhaust port 402 at a first rate, the first portion being substantially vertically aligned with the crescent-shaped opening 410. A second amount of etching gas is drawn from the process chamber 102 through a second portion of the exhaust port 402 at a second rate, the second portion not being substantially vertically aligned with the crescent-shaped opening 410 but being laterally offset from the crescent-shaped opening 410. The first amount of etching gas and / or a first rate at which the first amount of etching gas is extracted from the process chamber 102 are greater than the second amount of etching gas and / or a second rate at which the second amount of etching gas is extracted from the process chamber 102, respectively.

[0077] The swing or arm 404 is pivotally adjustable to move the sealing element 406 in an angular direction 408 relative to the edge of the base plate 400 that defines the circular opening of the exhaust port 402. Moving the sealing element 406 further in the direction 408 increases the size of the crescent-shaped opening 410. Moving the sealing element 406 in a direction opposite to the direction 408 decreases the size of the crescent-shaped opening 410. Both movements of the sealing element 406 change the flow of etching gas drawn through different portions of the exhaust port, thereby causing a change in the etching rate (e.g., on the substrate 200).

[0078] Figure 3A2 shows a top view of at least some of the process chambers 102 including the exhaust baffle 204 according to some embodiments. In some embodiments, the exhaust baffle 204 is annular and extends completely around the angular extent of the exhaust baffle 402. In some embodiments, the exhaust baffle 204 is continuous, forming a complete ring. In some embodiments, as Figure 3B As shown, the exhaust baffle 204 is not continuous, such as having two ends 305, 307 that do not touch. The exhaust baffle 204 includes a first region 308 that restricts the flow path of the etching gas, and a second region 310 that defines an opening 312 and allows substantially unrestricted flow of the etching gas. Figure 3B In the embodiment shown in FIG. 3 , the second region 310 is disposed between the two ends 305, 307. The first region 308 of the exhaust baffle 204 includes a shielding surface 314 formed of a material that is impermeable to etching gases, so that etching gases are blocked from passing through the portion of the exhaust baffle 204 consisting of the solid area of ​​the shielding surface 314.

[0079] The shielding surface 314 defines a plurality of ventilation holes 316. The number, size, shape, position, and orientation of the ventilation holes 316 relative to each other, etc., make the first region of the exhaust baffle 204 limit the flow path of the etching gas to promote uniform exposure of the substrate to the etching gas. In some embodiments, at least some of the ventilation holes 316 are uniform in size, uniform in shape, uniform in spacing relative to adjacent ventilation holes, uniformly positioned relative to the outer edge 309 of the exhaust baffle 204, and / or uniformly positioned relative to the inner edge 311 of the exhaust baffle 204. In some embodiments, at least some of the ventilation holes 316 are different from one or more other ventilation holes 316 in at least one of size, shape, relative position (at least one of the outer edge 309 of the exhaust baffle 204 and the inner edge 311 of the exhaust baffle 204), distance from the nearest ventilation hole, or any other feature, characteristic, etc. In some embodiments, one or more ventilation holes are of a first size, and one or more other ventilation holes are of a second size different from the first size. In some embodiments, one or more ventilation holes are of a first shape, and one or more other ventilation holes are of a second shape different from the first shape. In some embodiments, a first distance between the first exhaust hole and the second exhaust hole is different from a second distance between the third exhaust hole and the fourth exhaust hole. In some embodiments, the spacing between adjacent exhaust holes is increased to achieve a desired etching gas flow restriction. In some embodiments, the first distance between the first exhaust hole and the second exhaust hole is different from a second distance between the second exhaust hole and the third exhaust hole.

[0080] For example, if Figure 3AAs shown, the first vent 317 is rectangular, while the second vent 319 is trapezoidal. The first vent 317 occupies or consumes a first amount or area of ​​the exhaust baffle 204 to have a first cross-sectional flow area, while the second vent 319 occupies or consumes a second amount or area of ​​the exhaust baffle 204 to have a different second cross-sectional flow area. In some embodiments, even if the first vent and the second vent have different shapes, they can each occupy or consume the same amount or area of ​​the exhaust baffle 204, such as having equal cross-sectional flow areas. In some embodiments, even if the first vent and the second vent have the same shape, they can each occupy or consume different amounts or areas of the exhaust baffle 204, such as having different cross-sectional flow areas. As another example, the third exhaust hole 321 is defined by an outer wall 323 that is closer to the outer edge 309 of the exhaust baffle 204 than the outer wall 325 that defines the fourth exhaust hole 327. As another example, one vent (e.g., third vent 321) is defined by an inner wall 329 that is closer to the inner edge 311 of the exhaust baffle 204 than an inner wall 331 that defines another vent (e.g., fourth vent 327). Figure 3B 334 and / or 336) may have a changing orientation, such as a longest extent that is not parallel to the radial direction of the exhaust baffle 204. For example, such vents may be curved, arcuate, concentric with other vents, and / or have any other configuration and / or orientation.

[0081] Any one or more of the above and / or other features, characteristics, etc. of the exhaust baffle 204 can be customized to control or restrict the flow of gas along a path, wherein the restricted flow path provides greater resistance to the flow of etching gas than unimpeded flow of etching gas. For example, in some embodiments, the cross-sectional flow area of ​​all ventilation holes 316 combined is less than the total cross-sectional flow area of ​​the opening 312 defined by the second region 310 of the exhaust baffle 204.

[0082] In some embodiments, the first region 308 extends over an angular range θ between thirty (30°) and two hundred and seventy (270°) degrees around the exhaust baffle 204. In some embodiments, the first region 308 extends over an angular range θ between ninety (90°) and one hundred and eighty (180°) degrees around the annular exhaust baffle 204. In some embodiments, the second region 310 extends over the remaining angular range θ around the exhaust baffle 204.

[0083] The relatively restricted flow path by the first region 308 of the exhaust baffle 204 changes the flow of etching gas through the interior space toward the exhaust port relative to the unrestricted flow path through the opening 312 of the second region 310 of the exhaust baffle 204. In some embodiments, the implementation of the exhaust baffle 204 can improve the etch rate uniformity by up to sixty (60%) compared to when the exhaust baffle 204 is not implemented. In some embodiments, the implementation of the exhaust baffle 204 eliminates or reduces the C-shaped etch non-uniformity that would occur when the exhaust baffle 204 is not implemented.

[0084] Figure 3C An etch rate graph 300 is depicted showing a relatively uniform etch rate across the surface of the substrate 200 when the exhaust baffle 204 is installed in the process chamber according to some embodiments. For example, a portion of the surface of the substrate 200 located at a fixed, defined radial distance (indicated by dashed line 318) measured from the center 320 of the substrate 200 is etched at substantially the same etch rate. In some embodiments, the etch rates of the areas within the dashed line 318 are within a twenty percent (20%) tolerance of each other. In some embodiments, the etch rates of the areas within the dashed line 318 are within a fifteen percent (15%) tolerance of each other. In some embodiments, the etch rates of the areas within the dashed line 318 are within a ten percent (10%) tolerance of each other.

[0085] At least one of the following improves uniformity of the flow of etching gas over the substrate 200: the structure, shape, size, location, distribution, etc. of the shielding surface 314, the vents 316, or the angular extent θ of the first region 308 relative to the angular extent of the second region 310 around the exhaust baffle 204. In some embodiments, improving uniformity of the flow of etching gas involves causing the etching gas to flow more uniformly over the substrate 200 compared to an unobstructed flow of etching gas established when the exhaust baffle 204 is not supported in the flow path of the etching gas. However, other characteristics of the exhaust baffle 204 also contribute to improving uniformity of the flow of etching gas over the substrate 200 without departing from the scope of the present disclosure.

[0086] Figure 4A , 4B 4C illustrate top views of the exhaust baffle 204 with different densities and distributions of vent holes 316 according to some embodiments. The ratio of the area of ​​the first region 308 of the exhaust baffle 204 including the shielding surface 314 to the area of ​​the first region 308 of the exhaust baffle 204 including the vent holes 316, or the sum of the cross-sectional flow areas of all vent holes 316, affects the degree to which the flow path of the etching gas is restricted. For example, in Figure 4A In the embodiment of the exhaust baffle 204 shown, this ratio is approximately 1:1.5. Figure 4BIn the embodiment of the exhaust baffle 204 shown, this ratio is approximately 1:1.25. Figure 4B The embodiment of the exhaust baffle 204 shown is Figure 4A The embodiment of the exhaust baffle 204 shown has a larger portion of the first area 308 including the ventilation holes 316, or Figure 4B The sum of the cross-sectional flow areas of all the vents 316 of the illustrated embodiment of the exhaust baffle 204 is greater than Figure 4A The embodiment of the exhaust baffle 204 shown is the sum of the above. Figure 4B The embodiment of the exhaust baffle 204 shown, Figure 4A The illustrated embodiment of the exhaust baffle 204 imposes a greater restriction on the flow path of the etching gas.

[0087] The angular extent to which the first region 308 including the vents 316 extends above the exhaust baffle 204 also affects the restriction of the flow path of the etching gas. For example, as described above, Figure 4B The ventilation holes 316 are formed in the first region 308 to establish a density corresponding to a ratio of about 1:1.25. Figure 4C In the embodiment, the ventilation holes 316 are also formed in the first region 308 to establish a density corresponding to a ratio of about 1:1.25. Figure 3C In the embodiment, the angle range θ of the first region 308 is greater than that in Figure 3B The angle range θ of the first region 308 is as follows: Figure 4C Compared to the embodiment of the exhaust baffle 204 in Figure 4B The embodiment of the exhaust baffle 204 in FIG. 1 imposes a greater restriction on the flow path of the etching gas because Figure 4C The exhaust baffle 204 has a greater number of exhaust holes 316 than in the embodiment of Figure 4B An exhaust baffle 204 with a smaller number of exhaust holes 316 provides a larger flow path.

[0088] The angular orientation of a portion of the exhaust baffle 204 (eg, the first region 308) relative to the crescent-shaped opening 410 also affects the restriction of the flow path of the etching gas. Figure 4A and Figure 4B As shown, the first region 308 extends along the exhaust baffle 204 over an angular range θ of approximately one hundred seventy (170°) degrees, as indicated by line 500. A greater overlap exists between the first region 308 and the crescent-shaped opening 410 than between the second region 310 of the exhaust baffle 204. The ratio of the degree of overlap between the first region 308 and the crescent-shaped opening 410 to the degree of overlap between the second region 310 and the crescent-shaped opening 410 is selected to promote a relatively uniform etch rate across the surface of the substrate 200 in the process chamber 102.

[0089] Figure 5 A cross-sectional or partial cross-sectional view of at least some of the process chamber 102 according to some embodiments is shown, the process chamber 102 including an exhaust baffle 204 that promotes uniform etching of the substrate 200. The process chamber 102 includes a peripheral wall 401, a bottom plate 400, and a top plate 403, wherein the peripheral wall 401 extends between the bottom plate 400 and the top plate 403 to define an interior space 202. In some embodiments, the bottom plate 400 is annular, the top plate 403 is annular, and the peripheral wall 401 is cylindrical, so that at least some of the interior space 202 is substantially cylindrical. In some embodiments, the exhaust baffle 204 is annular. In some embodiments, the exhaust baffle 204 is continuous. In some embodiments, the exhaust baffle 204 is discontinuous, thereby having two ends that do not touch.

[0090] The gas inlet 208 is disposed between the internal space 202 and a gas source (not shown) and forms an internal passage through which the etching gas supplied by the gas source enters the internal space 202. The substrate 200 is supported in the internal space 202 by the substrate support 206 so that the surface of the substrate 200 is exposed to the etching gas. In some embodiments, the gas inlet 208 includes a shower head that introduces the etching gas into the internal space 202 in a dispersed manner through a plurality of holes formed in the shower head.

[0091] In some embodiments, the substrate support 206 is disposed in the center of the interior space 202. The annular channel 210 formed between the substrate support 206 and the peripheral wall 401 forms a flow path through which the etching gas flows toward the exhaust baffle 204 and then toward the exhaust port (not shown).

[0092] Figure 6 A flow chart is shown that depicts a method 600 of establishing an etching gas flow on a substrate 200, such as a semiconductor wafer, according to some embodiments. At step 602, an etching gas supplied by a gas source 104 is introduced into an interior space 202 of a process chamber 102. The interior space 202 is defined by a peripheral wall 401, a bottom plate 400, and a top plate 403, wherein the peripheral wall 401 extends between the bottom plate 400 and the top plate 403. In some embodiments, the bottom plate 400 is annular, the top plate 403 is annular, and the peripheral wall 401 is cylindrical, so that at least some of the interior space 202 is substantially cylindrical. The substrate 200 is supported on a substrate support 206 in the interior space 202. The etching gas is introduced into the interior space 202 through a gas inlet 208, which establishes fluid communication between the gas source 104 and the interior space 202.

[0093] At step 604, at least a portion of the etching gas is exhausted from the interior space 202 through the exhaust port 402 due to the partial vacuum established by the vacuum source 110. The partial vacuum is generally at a lower pressure than the interior space 202. Thus, at least a portion of the etching gas moves along a flow path from the process chamber 102 through the exhaust port 402 to the vacuum source 110. According to some embodiments, the vacuum source 110 forms at least a rough vacuum with a pressure of less than 760 Torr and as low as about 1 Torr. In some embodiments, the vacuum source 110 establishes at least a moderate vacuum with a pressure of no greater than 1 Torr and as low as about 1×10 -3 In some embodiments, the vacuum source 110 creates at least a high vacuum with a pressure no greater than 1×10 -3 Torr, as low as about 1×10 -7 In some embodiments, the vacuum source 110 creates at least an ultra-high vacuum having a vacuum of less than 1×10 -7 Torr's pressure.

[0094] At step 606, the flow of etching gas is controlled by supporting the exhaust baffle 204 in the flow path of the etching gas exhausted from the interior space through the exhaust port 402. In some embodiments, the exhaust baffle 204 is arranged in close proximity to the exhaust port 402. Without the exhaust baffle 204, given the size and position of the crescent-shaped opening, the etching gas will not be uniformly removed from the interior space 202 and will not flow uniformly across the substrate 200. For example, a first portion of the etching gas closer to the crescent-shaped opening will move at a first flow rate that is greater than a second flow rate of a second portion of the etching gas (further away from the crescent-shaped opening). The exhaust baffle 204 has a first region 308 that restricts the flow path of the etching gas toward the exhaust port to a first angle and a second region 310 that restricts the flow path of the etching gas toward the exhaust port to a second angle that is different from the first angle. In some embodiments, the etching gas flows substantially unrestricted through the second region 310 of the exhaust baffle 204, while the flow of the etching gas is restricted to some extent through the first region 308 of the exhaust baffle 204. In some embodiments, the first region 308 defines a plurality of vents 316. In some embodiments, the plurality of vents 316 have a collective cross-sectional flow area that is less than the cross-sectional flow area of ​​the opening defined by the second region 310 of the exhaust baffle 204. The exhaust baffle 204 is positioned relative to the crescent-shaped opening so that the first region 308 and the second region 310 facilitate uniform removal of the etching gas from the interior space 202, thereby uniformly flowing the etching gas through the substrate 200 to promote uniform etching. Due to the orientation of the exhaust baffle 204 relative to the exhaust port 402, a first flow rate of a first portion of the etching gas over a first portion of the substrate is generally the same as a second flow rate of a second portion of the etching gas over a second portion of the substrate. The exhaust baffle 204 can be of any size, shape, dimension, material, have any distribution of vents 316, etc., so as to uniformly remove etching gas from the interior space 202, so that the etching gas flows uniformly through the substrate 200. The exhaust baffle 204 can be annular, continuous, discontinuous, such as having two ends that do not touch, etc. At least some of the vents 316 can be different from one or more other vents 316 in at least one of size, shape, position relative to the exhaust baffle 204, and distance from the nearest adjacent vent. In some embodiments, the first region 308 extends around the exhaust baffle 204 over an angular range θ between thirty (30°) degrees and two hundred and seventy (270°). In some embodiments, the angular range θ of the first region 308 is between ninety (90°) degrees and one hundred and eighty (180°) degrees around the annular exhaust baffle 204. In some embodiments, the second region 310 extends around the remaining angular range.In some embodiments, a ratio of an area of ​​the first region 308 of the exhaust baffle 204 including the shielding surface 314 to an area of ​​the first region 308 of the exhaust baffle 204 including the vents 316 is at least about 1:1.5 or about 1:1.25. In some embodiments, the first region 308 overlaps seventy-five percent (75%) of the crescent-shaped opening 410.

[0095] In some embodiments, a process chamber for semiconductor manufacturing is provided. The process chamber includes a peripheral wall extending upward from a floor to define an interior space and a substrate support seat disposed in the interior space. The process chamber includes an inlet through which a process gas enters the interior space to be exposed to a surface of a substrate supported by the substrate support seat. The process chamber includes an exhaust port through which the process gas is removed from the interior space, wherein the exhaust port is configured to be fluidly coupled with a vacuum source to generate a vacuum that establishes a flow of the process gas on the substrate supported by the substrate support seat. The process chamber includes an exhaust baffle supported within a flow path of the process gas removed from the interior space through the exhaust port, wherein the exhaust baffle includes a first region that limits the flow path of the process gas toward a first direction to a first angle, and the exhaust baffle includes a second region that limits the flow path of the process gas toward the exhaust port to a second angle different from the first angle. In some embodiments, the first region of the baffle includes a shielding surface composed of a material that is impermeable to the process gas. In some embodiments, due to the orientation of the exhaust baffle relative to the exhaust port, a first flow rate of the first portion of the process gas over the first portion of the substrate is substantially equal to a second flow rate of the second portion of the process gas over the second portion of the substrate. In some embodiments, the shield surface defines a plurality of exhaust holes, the size of the exhaust holes restricting the flow path of the process gas. In some embodiments, the exhaust holes include an overall cross-sectional flow area, the overall cross-sectional flow area is less than the cross-sectional flow area of ​​the opening defined by the second region of the exhaust baffle. In some embodiments, the peripheral wall and the bottom plate define a cylindrical interior space, the substrate support is disposed in a central region of the cylindrical interior space, and the exhaust port is offset from the central region of the interior space. In some embodiments, the exhaust baffle includes an annular shape, and the first region of the exhaust baffle extends around the annular shape at an angular range between thirty degrees (30°) and two hundred and seventy degrees (270°). In some embodiments, the angular range of the first region is between ninety degrees (90°) and one hundred and eighty degrees (180°) around the annular shape.

[0096] In some embodiments, a semiconductor process system is provided, the semiconductor process system comprising a gas source for providing a process gas; a vacuum source; and a process chamber, the process chamber comprising a peripheral wall extending upward from a bottom plate to define an interior space; a substrate support seat disposed in the interior space; an inlet through which the process gas enters the interior space to be exposed to the surface of the substrate supported by the substrate support seat; a vacuum opening fluidly connected to the vacuum source, wherein the vacuum source establishes a partial vacuum at the vacuum opening to establish a flow of the process gas through the process chamber; an exhaust port through which the process gas is removed from the interior space, wherein the vacuum opening is offset from the exhaust port; and an exhaust baffle supported adjacent to the exhaust port in a flow path of a process gas removed from the interior space through the exhaust port, wherein the exhaust baffle comprises a first region, the first region restricts a flow path of the process gas toward the exhaust port at a first angle, the exhaust baffle further comprises a second region, the second region restricts a flow path of the process gas toward the exhaust port at a second angle different from the first angle, and wherein a portion of the first region of the exhaust baffle is vertically arranged with respect to a portion of the vacuum opening to affect the flow of the process gas through the process chamber. In some embodiments, the exhaust baffle defines a plurality of vents to affect the flow of the process gas through the process chamber. In some embodiments, the vents include a first vent having a first cross-sectional flow area and a second exhaust having a second cross-sectional flow area different from the first cross-sectional flow area. In some embodiments, the first vent has a first shape and the second vent has a second shape different from the first shape. In some embodiments, the vents include a first vent and a second vent, and the first vent is closer to at least one of an outer edge of the exhaust baffle or an inner edge of the exhaust baffle than the second vent. In some embodiments, the exhaust baffle is discontinuous such that a first end of the exhaust baffle does not contact a second end of the exhaust baffle. In some embodiments, a first region of the exhaust baffle overlaps with an arcuate region of the vacuum opening. In some embodiments, the first region of the exhaust baffle overlaps with the arcuate region of the vacuum opening to a greater extent than the second region of the exhaust baffle overlaps with the arcuate region of the vacuum opening.

[0097] In some embodiments, a method is provided, including introducing a process gas into an interior space of a process chamber through a gas inlet, wherein a substrate is supported in the interior space; exhausting the process gas from the interior space through an exhaust port fluidly connected to the interior space of the process chamber through a vacuum source; and controlling a flow of the process gas established by exhausting the process gas through the vacuum source by supporting an exhaust baffle in a flow path of the process gas exhausted from the interior space through the exhaust port. In some embodiments, controlling the flow of the process gas includes restricting a flow path of the process gas to the exhaust port at a first angle in a first region of the exhaust baffle; and restricting a flow path of the process gas to the exhaust port at a second angle different from the first angle in a second region of the exhaust baffle. In some embodiments, controlling the flow of the process gas includes establishing a substantially uniform etch rate of the substrate. In some embodiments, controlling the flow of the process gas includes positioning the exhaust baffle so that a first angular range of a first region of the exhaust baffle defining a plurality of vents overlaps a second angular range of the exhaust baffle.

[0098] The foregoing summarizes the features of several embodiments so that those skilled in the art can better understand the state of the present disclosure. Those skilled in the art will appreciate that they can easily use the present disclosure as a basis for designing or modifying other processes and structures to achieve the same purposes and / or achieve the same advantages as the embodiments described herein. Those skilled in the art will also appreciate that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and modifications herein without departing from the spirit and scope of the present disclosure.

[0099] Although the subject matter has been described in language specific to structural features or methodological acts, it is to be understood that the subject matter of the appended claims is not necessarily limited to the specific features or acts described above. Rather, the specific features and acts described above are disclosed as example forms of implementing at least some of the claims.

[0100] Various operations of the embodiments are provided herein. The order of describing some or all operations should not be interpreted as implying that these operations are necessarily related to the order. With the benefit of the description herein, alternative arrangements will be understood. In addition, not all operations must exist in each embodiment provided herein. Moreover, not all operations are required in some embodiments.

[0101] It should be understood that, for example, for the purpose of simplicity and ease of understanding, the layers, features, elements, etc. depicted herein are shown with specific dimensions relative to each other (such as structural dimensions or directions), and for ease of understanding, in some embodiments, they are substantially different from those described herein. In addition, there are a variety of techniques for forming the layers, regions, features, elements, etc. mentioned herein, such as etching techniques, planarization techniques, implantation techniques, doping techniques, spin coating techniques, sputtering techniques, growth techniques, or at least one of deposition techniques such as chemical vapor deposition (CVD).

[0102] Moreover, "exemplary" is used herein to indicate that it is used as an example, instance, illustration, etc., and is not necessarily advantageous. As used in this application, "or" is intended to represent an inclusive "or" rather than an exclusive "or". In addition, "one" and "a kind of" used in this application and the appended claims are generally interpreted as meaning "one or more", unless otherwise specified or clearly pointed to the singular form from the context. Moreover, at least one of A and B, etc. generally represents A or B or both A and B. In addition, to the extent that "including", "having" or its variants are used, these terms are intended to be included in a manner similar to the term "comprising". In addition, unless otherwise specified, "first", "second", etc. do not imply time aspects, space aspects. On the contrary, these terms are only used as identifiers, names, etc. of features, elements, items, etc. For example, the first element and the second element generally correspond to element A and element B or two different elements or two identical elements or identical elements.

[0103] Moreover, although the disclosure has been shown and described with respect to one or more embodiments, other persons of ordinary skill in the art will think of equivalent changes and modifications based on reading and understanding of this specification and the drawings. The disclosure includes all such modifications and changes and is limited only by the appended claims. In particular, with respect to the various functions performed by the above-mentioned components, unless otherwise indicated, the terms used to describe such components are intended to correspond to any component that performs the specified function of the component (e.g., functionally equivalent), even if the structure is not structurally equivalent to the disclosed structure. In addition, although a particular feature of the disclosure may be disclosed with respect to only one of several embodiments, such a feature may be combined with one or more other features of other embodiments as may be desired and advantageous for any given or particular application.

Claims

1. A semiconductor process chamber, characterized in that: include: A peripheral wall extending upward from a bottom plate to define an interior space; A substrate support seat disposed within the internal space; a housing surrounding the substrate support and contacting a side wall of the substrate support; a focus ring, wherein a first portion of the focus ring covers and directly contacts the substrate support, a second portion of the focus ring covers and directly contacts the housing, and when the substrate support supports a substrate, the bottommost surface of the focus ring is coplanar with the bottommost surface of the substrate; a cover ring surrounding the focus ring and directly contacting the focus ring and the housing; an inlet through which a process gas enters the inner space to be exposed to a surface of the substrate supported by the substrate support base; an exhaust port through which the process gas is removed from the interior space, wherein the exhaust port is configured to be fluidly connected to a vacuum source to generate a vacuum that establishes a flow of the process gas over the substrate supported by the substrate support; and An exhaust baffle is supported within a flow path of the process gas removed from the interior space through the exhaust port, wherein the exhaust baffle includes a first region that limits the flow path of the process gas toward the exhaust port at a first angle, and the exhaust baffle also includes a second region that limits the flow path of the process gas toward the exhaust port at a second angle different from the first angle.

2. The semiconductor process chamber according to claim 1, wherein: The first region of the baffle includes a shielding surface composed of a material that is impermeable to the process gas.

3. The semiconductor process chamber according to claim 1, wherein: Due to the orientation of the exhaust baffle relative to the exhaust port, a first flow rate of a first portion of the process gas over a first portion of the substrate is substantially equal to a second flow rate of a second portion of the process gas over a second portion of the substrate.

4. The semiconductor processing chamber according to claim 2, wherein: The shield surface defines a plurality of exhaust holes, the sizes of which restrict the flow path of the process gas.

5. The semiconductor process chamber according to claim 4, wherein: The plurality of exhaust apertures comprises an overall cross-sectional flow area that is less than a cross-sectional flow area of ​​an opening defined by the second region of the exhaust baffle.

6. The semiconductor processing chamber according to claim 1, wherein: The peripheral wall and the bottom plate define a cylindrical inner space, the substrate support seat is arranged in a central area of ​​the cylindrical inner space, and the exhaust port deviates from the central area of ​​the inner space.

7. The semiconductor processing chamber according to claim 6, wherein: The exhaust baffle includes an annular shape, and the first region of the exhaust baffle extends around an annular shape over an angular range between thirty degrees (30°) and two hundred seventy degrees (270°).

8. The semiconductor process chamber according to claim 7, wherein: The first region has an angular extent of between ninety degrees (90°) and one hundred eighty degrees (180°) around the annular shape.

9. A semiconductor process system, characterized in that: include: A gas source providing a process gas; a vacuum source; as well as A process chamber, comprising: A peripheral wall extending upward from a bottom plate to define an interior space; A substrate support seat disposed in the internal space; a housing surrounding the substrate support; a focus ring, wherein a first portion of the focus ring covers and directly contacts the substrate support, a second portion of the focus ring covers and directly contacts the housing, and when the substrate support supports a substrate, the bottommost surface of the focus ring is coplanar with the bottommost surface of the substrate; a cover ring surrounding the focus ring and covering the housing; an inlet through which the process gas enters the inner space to be exposed to a surface of the substrate supported by the substrate support base; a vacuum opening fluidly connected to the vacuum source, wherein the vacuum source establishes a partial vacuum at the vacuum opening to establish a flow of the process gas through the process chamber; an exhaust port through which the process gas is removed from the interior space, wherein the vacuum opening is offset from the exhaust port; and an exhaust baffle supported adjacent to the exhaust port in a flow path of the process gas removed from the interior space through the exhaust port, wherein the exhaust baffle includes a first region that limits the flow path of the process gas toward the exhaust port at a first angle, the exhaust baffle also includes a second region that limits the flow path of the process gas toward the exhaust port at a second angle different from the first angle, and wherein a portion of the first region of the exhaust baffle is vertically aligned with a portion of the vacuum opening to affect the flow of the process gas through the process chamber.

10. The semiconductor process system according to claim 9, wherein: The exhaust baffle defines a plurality of vent holes to affect the flow of the process gas through the process chamber.

11. The semiconductor process system according to claim 10, wherein: The plurality of ventilation holes include a first ventilation hole having a first cross-sectional flow area and a second ventilation hole having a second cross-sectional flow area different from the first cross-sectional flow area.

12. The semiconductor process system according to claim 11, wherein: The first ventilation hole has a first shape, and the second ventilation hole has a second shape different from the first shape.

13. The semiconductor process system according to claim 10, wherein: The plurality of ventilation holes include a first ventilation hole and a second ventilation hole, and the first ventilation hole is closer to at least one of an outer edge of the exhaust baffle or an inner edge of the exhaust baffle than the second ventilation hole.

14. The semiconductor process system according to claim 9, wherein: The exhaust baffle is discontinuous such that a first end of the exhaust baffle does not contact a second end of the exhaust baffle.

15. The semiconductor process system according to claim 9, wherein: The first area of ​​the exhaust baffle overlaps with an arc-shaped area of ​​the vacuum opening.

16. The semiconductor process system according to claim 15, wherein: The degree of overlap between the first area of ​​the exhaust baffle and the arc-shaped area of ​​the vacuum opening is greater than the degree of overlap between the second area of ​​the exhaust baffle and the arc-shaped area of ​​the vacuum opening.

17. A method for generating a process gas flow, characterized in that: include: A process gas is introduced into an interior space of a process chamber through a gas inlet, wherein a substrate is supported in the interior space, the process chamber comprising: a housing surrounding the substrate support; a focus ring, wherein a first portion of the focus ring covers and directly contacts the substrate support, a second portion of the focus ring covers and directly contacts the housing, and when the substrate support supports a substrate, the bottommost surface of the focus ring is coplanar with the bottommost surface of the substrate; a cover ring surrounding the focus ring and directly contacting the focus ring and the housing; exhausting the process gas from the interior space of the process chamber via a vacuum source through an exhaust port fluidly connected to the interior space of the process chamber; and A flow of a process gas established by exhausting the process gas through the vacuum source is controlled by supporting an exhaust baffle in a flow path of the process gas exhausted from the interior space through the exhaust port.

18. The method according to claim 17, characterized in that Controlling the flow of the process gas includes: In a first region of the exhaust baffle, limiting the flow path of the process gas toward the exhaust port at a first angle; and In a second region of the exhaust baffle, the flow path of the process gas toward the exhaust port is restricted at a second angle different from a first angle.

19. The method according to claim 17, characterized in that Controlling the flow of the process gas includes establishing a substantially uniform etch rate of the substrate.

20. The method according to claim 17, characterized in that Controlling the flow of the process gas includes positioning the exhaust baffle so that a first angular range of the exhaust baffle defining a first area of ​​a plurality of ventilation holes overlaps a second angular range of the exhaust baffle.

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